Graph symmetry processing method, graph symmetry processing system, and computer medium

Abstract

The present application relates to the field of photoetching technology, and particularly relates to a pattern symmetry processing method, a pattern symmetry processing system and a computer medium, the pattern symmetry processing method comprises the following steps: obtaining a main pattern and a corresponding auxiliary pattern which need to be photoetched; placing the auxiliary pattern outside the main pattern according to a preset mode; obtaining an optimization dependency relationship based on a preset auxiliary pattern traversal rule; performing the auxiliary pattern traversal rule and optimizing the auxiliary pattern based on the result of the optimization dependency relationship; performing conflict resolution processing on the optimized auxiliary pattern to obtain a required exposure pattern comprising the main pattern. By formulating a separate auxiliary pattern traversal rule, the auxiliary pattern is no longer optimized only according to the initial optimization order when traversing, and the auxiliary pattern is optimized under the condition of ensuring symmetry and integrity, thereby improving the symmetry of the exposure pattern.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photolithography, in particular to a pattern symmetry processing method, a pattern symmetry processing system and a computer medium. BACKGROUND

[0002] In the photolithography process, thanks to the progress of microelectronic technology and the innovation of optical photolithography technology, the exposure limit has been broken through repeatedly, and the photolithography process node has entered 90nm. Due to the influence of optical proximity effect, the effect of exposure of dense patterns and the effect of exposure of isolated patterns becomes greater. Under the same light intensity, the exposure effect of sparse patterns is worse than that of dense patterns. Therefore, sub-resolution assist features (SRAF) are introduced. The existing optimization algorithm is to traverse the sub-resolution assist features (SRAF), and according to the calculation and judgment of the position, the sub-resolution assist features (SRAF) are narrowed, merged, deleted and other operations. In the optimization process of the assist features, due to the different traversal orders of the layout reading and the different optimization orders, the optimization conditions of the exposure assist features at the symmetrical positions are different, which leads to the destruction of the symmetry of the exposure patterns. SUMMARY

[0003] In order to improve the symmetry of the exposure patterns, the present application provides a pattern symmetry processing method, a pattern symmetry processing system and a computer medium.

[0004] The technical problem of the present application is solved by providing a pattern symmetry processing method, which includes the following steps: obtaining a main pattern and a corresponding assist feature which need to be photolithographed; placing the assist feature outside the main pattern according to a preset mode; obtaining an optimization dependency relationship based on a preset assist feature traversal rule; performing the assist feature traversal rule and optimizing the assist feature based on the result of the optimization dependency relationship; and performing conflict resolution processing on the optimized assist feature to obtain a required exposure pattern including the main pattern.

[0005] Preferably, the assist feature is a sub-resolution assist feature.

[0006] Preferably, the assist feature includes at least one layer, and the layer-to-layer spacing of each layer of the assist feature is less than 40nm.

[0007] Preferably, after obtaining the dependency relationship, the following steps are further included: storing the traversal order and the optimization dependency relationship of the pattern based on the optimization order and a directed graph storage method; and adding an operation record to each assist feature that needs to be processed.

[0008] Preferably, the conflict resolution of the optimized auxiliary graph comprises the following steps: determining whether the traversal rule causes conflict based on the optimization result; if not, obtaining the demand exposure graph based on the optimization result; if yes, resolving the conflict of the auxiliary graph according to the optimization processing sequence to obtain the demand exposure graph.

[0009] Preferably, the processing of the auxiliary graph further comprises the following steps: obtaining the optimization dependency sequence of the first position of the auxiliary graph; traversing the entire graph and the optimization dependency sequence through a pointer, and optimizing the auxiliary graph based on the traversal result; traversing at the second position according to the optimization result of the auxiliary graph; if the processing result of the second position matches that of the first position, obtaining the optimized graph.

[0010] Preferably, the preset mode of placing the auxiliary graph is placing according to the sub-resolution auxiliary graph rule table.

[0011] Preferably, the second position and the first position can be symmetrically arranged or arranged at an included angle.

[0012] The present application also provides a graph symmetry processing system to solve the above technical problems, comprising a data analysis module, a data processing module and a running module, the data analysis module performs numerical analysis on the main graph, the auxiliary graph and the traversal process, and transmits the analysis result to the data processing module, the data processing module simulates the placement of the auxiliary graph and transmits the placement instruction to the running module, and the running module receives the analysis result and instruction of the data processing module to execute the graph placement and traversal program.

[0013] The present application also provides a computer medium to solve the above technical problems, comprising a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor executes the computer program to realize the graph symmetry processing method as described above.

[0014] Compared with the prior art, the graph symmetry processing method, the graph symmetry processing system and the computer medium of the present application have the following advantages:

[0015] 1. The pattern symmetry processing method of the present application comprises the following steps: obtaining a main pattern and a corresponding auxiliary pattern that need to be photolithographed; placing the auxiliary pattern outside the main pattern according to a preset mode; obtaining an optimization dependency relationship based on a preset auxiliary pattern traversal rule; performing the auxiliary pattern traversal rule and optimizing the auxiliary pattern based on the result of the optimization dependency relationship; and performing conflict resolution processing on the optimized auxiliary pattern to obtain a required exposure pattern including the main pattern. The preset auxiliary pattern traversal rule is to formulate a separate auxiliary pattern traversal rule. By this method, the auxiliary pattern is no longer optimized only according to the initial optimization order when traversing, and the auxiliary pattern is optimized under the condition of ensuring symmetry and integrity, thereby improving the symmetry of the exposure pattern.

[0016] 2. The pattern symmetry processing method of the present application, wherein the auxiliary pattern is a sub-resolution auxiliary pattern. By this method, the sub-resolution auxiliary pattern can be used for exposure intensity enhancement of the main pattern, and no exposure pattern is generated on the exposure plane.

[0017] 3. The pattern symmetry processing method of the present application, wherein the auxiliary pattern includes at least one layer, and the interlayer spacing of each layer of the auxiliary pattern is less than 40 nm. The auxiliary pattern is used to process the redundancy or non-compliance with the mask manufacturing condition of the main pattern by means of the algorithm of the sub-resolution pattern, and does not have a negative impact on the main pattern. In addition, the spacing of each layer of the auxiliary pattern is too large, which reduces the light intensity enhancement effect on the main pattern.

[0018] 4. The pattern symmetry processing method of the present application, wherein after obtaining the dependency relationship, the following steps are further included: storing the traversal order and the optimization dependency relationship of the pattern based on the optimization order and a directed graph storage method; and adding operation records to each auxiliary pattern that needs to be processed. By obtaining the dependency relationship of the traversal pattern and storing it based on the optimization order, and using the dependency relationship in other positions, the work complexity can be reduced, and the symmetry of the exposure pattern can be further ensured. The record of the traversal order and the operation process can leave data for future reference, and provide more detailed data support for subtle adjustment or improvement, thereby reducing the work complexity and improving the efficiency.

[0019] 5. The pattern symmetry processing method of the present application, wherein the conflict resolution processing of the optimized auxiliary pattern comprises the following steps: determining whether the traversal rule leads to a conflict based on the optimization processing result; if no conflict is caused, obtaining a required exposure pattern based on the optimization result; and if a conflict is caused, resolving the conflict of the auxiliary pattern according to the optimization processing order to obtain a required exposure pattern. By this method, it can be detected whether the formulated auxiliary pattern traversal rule is effective, and the required exposure pattern is obtained by adjusting the conflict resolution, thereby avoiding repeated cycles of the above optimization steps and improving the work efficiency.

[0020] 6. The graphic symmetry processing method of the present invention further includes the following steps for processing the auxiliary graphic: obtaining the optimization dependency order of the first position of the auxiliary graphic; traversing the entire graphic and the optimization dependency order using a pointer, and optimizing the auxiliary graphic based on the traversal result; traversing the second position according to the optimization result of the auxiliary graphic; if the processing result of the second position matches that of the first position, the optimized graphic is obtained. This method, by traversing the entire graphic and the optimization dependency order using a pointer, can intuitively reflect the reliability of the graphic optimization order and dependency order, while not affecting the spatial position of the auxiliary graphic; traversing the optimization result at the second position ensures that the traversal process at the second position is the same as that at the first position, further guaranteeing the symmetry of the graphic.

[0021] 7. In the graphic symmetry processing method of the present invention, the preset method for placing auxiliary graphics is to place them according to a sub-resolution auxiliary graphics rule table. Placing the auxiliary graphics according to the sub-resolution auxiliary graphics rule table allows for more accurate placement of the auxiliary graphics, ensuring that while providing light intensity correction to the main graphics, symmetry is also satisfied.

[0022] 8. In the graphic symmetry processing method of the present invention, the second position and the first position can be set symmetrically or at an angle. This method can further ensure the symmetry of the exposed pattern.

[0023] 9. The graphic symmetry processing system of the present invention performs graphic symmetry processing using the graphic symmetry processing method described above. It includes a data analysis module, a data processing module, and an operation module. The data analysis module performs numerical analysis on the main graphic, auxiliary graphic, and traversal process, and transmits the analysis results to the data processing module. The data processing module simulates the placement of auxiliary graphic and transmits the placement instructions to the operation module. The operation module receives the analysis results and instructions from the data processing module and executes the graphic placement and traversal program. It has the same beneficial effects as the graphic symmetry processing method described above, and will not be elaborated here.

[0024] 10. The present invention also provides a storage medium, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the graphic symmetry processing method described above, and has the same beneficial effects as the graphic symmetry processing method described above, which will not be elaborated here. [Attached Image Description]

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 is a step flow chart of a graphic symmetry processing method provided by the first embodiment of the present application.

[0027] Figure 2 is a step chart of a graphic symmetry processing method provided by the first embodiment of the present application after obtaining the optimized dependency relationship.

[0028] Figure 3 is a step flow chart of an optimization processing of a graphic symmetry processing method provided by the first embodiment of the present application.

[0029] Figure 4 is a step flow chart of a conflict solving of a graphic symmetry processing method provided by the first embodiment of the present application.

[0030] Figure 5 is a schematic diagram of a graphic symmetry processing method provided by the first embodiment of the present application before optimization.

[0031] Figure 6 is a schematic diagram of a graphic symmetry processing method provided by the first embodiment of the present application during optimization.

[0032] Figure 7 is a schematic diagram of a graphic symmetry processing method provided by the first embodiment of the present application after optimization.

[0033] Figure 8 is a schematic diagram of a graphic symmetry processing system provided by the second embodiment of the present application.

[0034] Figure 9 is a schematic diagram of a computer medium provided by the third embodiment of the present application.

[0035] Explanation of the drawing:

[0036] 1, graphic symmetry processing system; 2, computer medium;

[0037] 11, data analysis module; 12, data processing module; 13, running module; 21, memory; 22, processor; 23, computer program;

[0038] A, main graphic; B, auxiliary graphic;

[0039] B1, first position; B2, second position.

CONCRETE IMPLEMENTATION

[0040] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.

[0041] Please combine Figure 1 , Figures 5-7 , the first embodiment of the present application provides a pattern symmetry processing method, comprising the following steps:

[0042] S 1: obtaining the main pattern and the corresponding auxiliary pattern that needs to be exposed;

[0043] S 2: placing the auxiliary pattern outside the main pattern according to the preset mode;

[0044] S 3: obtaining the optimization dependency relationship based on the preset auxiliary pattern traversal rule;

[0045] S 4: executing the auxiliary pattern traversal rule and optimizing the auxiliary pattern based on the result of the optimization dependency relationship;

[0046] S 5: performing conflict resolution processing on the optimized auxiliary pattern to obtain the required exposure pattern including the main pattern.

[0047] Specifically, the auxiliary pattern is a sub-resolution auxiliary pattern, which is placed close to the main pattern to ensure that sufficient light intensity correction is provided for the main pattern.

[0048] It should be noted that the preset auxiliary pattern traversal rule specifically refers to formulating a separate traversal rule for the auxiliary pattern; placing the sub-resolution auxiliary pattern is to add some small patterns around the sparse main pattern in the layout, so that the sparse main pattern is approximately dense in the optical angle, but the small pattern must be smaller than the resolution of the lithography machine, so that during exposure, these patterns only scatter light, strengthen the light intensity of the main pattern, and will not be transferred to the photoresist, thereby enhancing the exposure effect.

[0049] In addition, in practice, the shape and placement position of the exposure auxiliary pattern will be limited according to the design of the manufacturability of the auxiliary pattern, and the exposure auxiliary pattern will be optimized. During the optimization process of the auxiliary pattern, due to the different traversal orders of the layout reading, the optimization order may be different, resulting in different optimization conditions of the exposure auxiliary pattern on the symmetric position, which destroys the symmetry of the main pattern.

[0050] Obviously, formulating a separate traversal rule for the auxiliary pattern can change the traversal order of the auxiliary pattern reading, and by adjusting the optimization dependency relationship of the auxiliary pattern through the formulated traversal rule, the symmetry of the main pattern can be adjusted.

[0051] Understandably, by formulating a separate auxiliary pattern traversal rule, the auxiliary pattern is no longer optimized only according to the initial optimization order when traversing, and the auxiliary pattern is optimized under the condition of ensuring symmetry and integrity, thereby improving the symmetry of the exposure pattern.

[0052] Further, the auxiliary pattern includes at least one layer, and the interval between layers of each layer of the auxiliary pattern is less than 40 nm.

[0053] It should be noted that the number of layers of the auxiliary pattern is not limited, but the increase of the number of layers increases the working difficulty and complexity, and the subsequent corresponding cleaning work will increase the working time due to the redundancy of the auxiliary pattern, or violate some design rules.

[0054] Optionally, the number of layers of the auxiliary pattern can be two, three, five, etc.

[0055] Specifically, in the specific embodiment of the present application, the number of layers of the sub-resolution auxiliary pattern is three, and the pattern arrangement of each layer is different.

[0056] It can be understood that the auxiliary pattern is used to process the redundancy or non-compliance with the mask manufacturing conditions of the main pattern by means of the algorithm of the sub-resolution pattern, which does not have a negative impact on the main pattern, and secondly, the interval of each layer of the auxiliary pattern is too large to reduce the light intensity enhancement effect on the main pattern.

[0057] Further, please refer to Figure 2 , after obtaining the dependency relationship, the following steps are further included:

[0058] S31: based on the optimization order and the storage method of the directed graph, the traversal order and the optimization dependency relationship of the pattern are stored;

[0059] S32: adding operation records to each auxiliary pattern that needs to be processed.

[0060] It should be noted that according to the existing optimization algorithm of the sub-resolution auxiliary pattern, the pattern traversal order storage algorithm is introduced, the symmetry information of the pattern is recorded in the traversal algorithm on the basis of the existing traversal order, the optimization rule is combined with the scheduling order algorithm, and the sub-resolution auxiliary pattern is optimized and processed, so that the sub-resolution auxiliary pattern has more symmetry.

[0061] It can be understood that based on the optimization order, the dependency relationship of the traversed pattern is obtained and stored, and the dependency relationship is applied to other positions of the auxiliary pattern, which can reduce the working complexity and further ensure the symmetry of the exposure pattern; the record of the traversal order and the operation process can provide more detailed data support for fine adjustment or improvement, reduce the working complexity, and improve the efficiency.

[0062] Further, please refer to Figure 3 , Figures 5-7 , the optimization processing of the auxiliary pattern B specifically further includes the following steps:

[0063] S41: obtaining the optimization dependency order of the first position B1 of the auxiliary pattern B;

[0064] S 42: traversing the entire auxiliary pattern B through the pointer and optimizing the dependent sequence, and optimizing the auxiliary pattern B based on the traversal result;

[0065] S 43: traversing the second position B2 according to the optimization result of the auxiliary pattern B;

[0066] S 44: if the processing result of the second position B2 matches the first position B1, the optimized pattern is obtained.

[0067] It should be noted that the sub-resolution auxiliary pattern B is placed in the periphery of the main pattern A, and is provided with a placement distance according to actual needs. When traversing the entire pattern, the traversal sequence of the auxiliary pattern B located on different sides of the main pattern A is not the same, so that the final retention result is not symmetrical.

[0068] Specifically, in the specific embodiment of the present application, the first position B1 is the starting point of traversing the auxiliary pattern B according to the optimization sequence during the reading of the entire pattern, and the second position B2 is the starting point of the auxiliary pattern B located in different directions of the main pattern A.

[0069] More specifically, Figure 5 The initial position of the entire pattern, that is, the main pattern A and the auxiliary pattern B, when traversing the auxiliary pattern B according to the optimization sequence, one side of the auxiliary pattern B will be optimized from the first position B1 based on the optimization sequence, and the side adjacent to the side will be optimized from the second position B2 based on the optimization sequence. Therefore, the auxiliary pattern B retained after optimization will be different, thereby losing symmetry.

[0070] Therefore, by the method, one side of the auxiliary pattern B at the first position B1 is traversed first, and the traversal data and the optimization dependent sequence of the side are stored and applied to the side at the second position B2, while combining the traversal sequence, the results of each side of the auxiliary pattern B are retained respectively, thereby obtaining the optimization process diagram as shown in Figure 6

[0071] Further, the optimization process diagram as shown in Figure 6 is subjected to program conflict judgment and conflict resolution processing to adjust and test the prepared traversal rule. If no conflict is generated, or the conflict is generated and the optimization is performed based on the optimization traversal rule of the auxiliary pattern to clear part of the auxiliary pattern to solve the conflict, the optimized demand exposure pattern as shown in Figure 7 is obtained.

[0072] ​In addition, the order of clearing part of the auxiliary pattern in solving the conflict is related to the traversal rule and the optimization order, and the traversal order and the integrity of the auxiliary pattern B can be directly reflected by traversing the whole auxiliary pattern B through the pointer.

[0073] Understandably, by this method, and by traversing the whole pattern through the pointer and optimizing the dependent order, the optimization order of the whole pattern and the reliability of the dependent program can be directly reflected, while the spatial position of the auxiliary pattern B is not affected; the optimization result is traversed in the second position B2, so that the traversal of the second position B2 is the same as the traversal process of the first position B1, further ensuring the symmetry of the pattern.

[0074] Further, the second position B2 and the first position B1 can be symmetrically arranged or arranged at an angle.

[0075] Understandably, by this method, the symmetry of the exposure pattern can be further ensured.

[0076] Further, please refer to Figure 4 The conflict solving process of the optimized auxiliary pattern includes the following steps:

[0077] S51: determining whether the traversal rule leads to a conflict based on the optimization processing result;

[0078] S52: if no conflict is caused, obtaining the required exposure pattern based on the optimization result;

[0079] S53: if a conflict is caused, solving the conflict of the auxiliary pattern according to the optimization processing order to obtain the required exposure pattern.

[0080] It should be noted that the conflict in the present application is mainly the conflict caused by violating the design rule, and can be solved by adjusting the optimization processing order.

[0081] Understandably, by this method, by obtaining and storing the dependent relationship of the traversal pattern, and then using the dependent relationship in other positions, the work complexity can be reduced, and the symmetry of the exposure pattern can be further ensured.

[0082] Further, the preset manner of placing the auxiliary pattern is to place according to the sub-resolution auxiliary pattern rule table.

[0083] Understandably, according to the sub-resolution auxiliary pattern rule table, the placement of the auxiliary pattern can be more accurate, ensuring that the main pattern provides light intensity correction while meeting the symmetry.

[0084] Please refer to Figure 8The second embodiment of the present application also provides a graphic symmetry processing system 1 for processing graphic symmetry by using the graphic symmetry processing method as described above, comprising a data analysis module 11, a data processing module 12 and a running module 13, the data analysis module 11 performs numerical analysis on the main graphic, the auxiliary graphic and the traversal process, and transmits the analysis result to the data processing module 12, the data processing module 12 simulates the placement of the auxiliary graphic and transmits the placement instruction to the running module 13, and the running module 13 executes the graphic placement and the traversal process according to the analysis result and the instruction from the data processing module 12.

[0085] Please refer to Figure 9 The third embodiment of the present application also provides a storage medium 2, comprising a memory 21, a processor 22 and a computer program 23 stored in the memory 21 and capable of running on the processor 22, when the processor 22 executes the computer program 23, the graphic symmetry processing method as described above is realized, and the graphic symmetry processing method has the same beneficial effects as described above, which will not be repeated here.

[0086] It can be appreciated that the processes described above with reference to the flowcharts can be implemented as computer software programs in accordance with embodiments of the present disclosure. For example, embodiments of the present disclosure include a computer program product comprising a computer program carried on a computer readable medium, the computer program comprising program code for executing the methods illustrated by the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network via a communication section, and / or installed from a detachable medium. When the computer program is executed by a central processing unit (CPU), the above-described functions defined in the methods of the present application are executed. It should be noted that the computer readable medium described in the present application can be a computer readable signal medium or a computer readable storage medium or any combination of the two. The computer readable storage medium includes, for example, but is not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or apparatus, or any combination of the above. More specific examples of the computer readable storage medium can include, but are not limited to, an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, the computer readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, device or apparatus. In the present application, the computer readable signal medium can include a data signal carried in a baseband or as a part of a carrier wave, in which a computer readable program code is carried. Such a propagated data signal can take on many forms, including but not limited to, an electromagnetic signal, an optical signal, or any suitable combination of the above. The computer readable signal medium can also be any computer readable medium that can send, propagate or transfer a program for use by or in connection with an instruction execution system, device or apparatus. The program code contained on the computer readable medium can be transmitted using any suitable medium, including but not limited to, wireless, wire line, optical fiber cable, RF, etc., or any suitable combination of the above.

[0087] Computer program code for carrying out operations of the present application can be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C++ or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider).

[0088] In the embodiments provided in the present application, it should be understood that "B corresponding to A" means that B is associated with A, and B can be determined according to A. However, it should also be understood that the determination of B according to A does not mean that B is determined only according to A, but B can also be determined according to A and / or other information.

[0089] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in any suitable manner in one or more embodiments. Those skilled in the art should also know that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0090] In various embodiments of the present application, it should be understood that the size of the sequence number of the above-mentioned processes does not mean the inevitable sequence of execution order, and the execution order of the processes should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0091] The flow diagrams and the block diagrams in the drawings are illustrations of architectures, functional processes, and operational processes according to various embodiments of the present application. In this regard, each block in the flow diagrams or block diagrams can represent a module, a segment, or a portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that in some alternative implementations, the functions noted in the blocks can occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and / or flow diagrams, and combinations thereof, can be implemented by dedicated hardware-based systems which perform the specified functions or operations, or combinations of hardware and software.

[0092] Compared with the prior art, the pattern symmetry processing method, the pattern symmetry processing system and the computer medium have the following advantages:

[0093] 1. The pattern symmetry processing method comprises the following steps: obtaining a main pattern and a corresponding auxiliary pattern that need to be photoetched; placing the auxiliary pattern outside the main pattern according to a preset mode; obtaining an optimization dependency relationship based on a preset auxiliary pattern traversal rule; performing the auxiliary pattern traversal rule and optimizing the auxiliary pattern based on the result of the optimization dependency relationship; and performing conflict resolution processing on the optimized auxiliary pattern to obtain a required exposure pattern comprising the main pattern. The preset auxiliary pattern traversal rule is to formulate a separate auxiliary pattern traversal rule, so that the auxiliary pattern is no longer optimized only according to the initial optimization order when performing traversal, and the auxiliary pattern is optimized under the condition of ensuring symmetry and integrity, thereby improving the symmetry of the exposure pattern.

[0094] 2. The pattern symmetry processing method, wherein the auxiliary pattern is a sub-resolution auxiliary pattern. Through this method, the sub-resolution auxiliary pattern can be used for exposure intensity enhancement of the main pattern, and no exposure pattern is generated on the exposure plane.

[0095] 3. The pattern symmetry processing method, wherein the auxiliary pattern comprises at least one layer, and the interlayer spacing of each layer of the auxiliary pattern is less than 40 nm. The auxiliary pattern is used to process the redundancy or the condition that does not meet the mask manufacturing condition of the main pattern by means of the algorithm of the sub-resolution pattern, and does not have a negative impact on the main pattern. In addition, the spacing of each layer of the auxiliary pattern is too large, which reduces the light intensity enhancement effect on the main pattern.

[0096] 4. The method for processing the symmetry of the graphic according to the present application, after the dependency relationship is obtained, further comprises the following steps: based on the optimization sequence and the storage method of the directed graph, the traversal sequence and the optimization dependency relationship of the graphic are stored; and the operation record is added to each auxiliary graphic which needs to be processed. Through the optimization sequence, the dependency relationship of the traversal graphic is obtained and stored, and the dependency relationship is used in other positions, which can reduce the complexity of the work and further ensure the symmetry of the exposure graphic; the record of the traversal sequence and the operation process can provide data for the bottom, and in the case of fine adjustment or improvement, more detailed data support is provided, which reduces the complexity of the work and improves the efficiency.

[0097] 5. The method for processing the symmetry of the graphic according to the present application, the conflict resolution processing of the auxiliary graphic after the optimization comprises the following steps: based on the optimization processing result, it is determined whether the traversal rule causes the conflict; if the conflict is not caused, the required exposure graphic is obtained based on the optimization result; and if the conflict is caused, the conflict of the auxiliary graphic is resolved according to the optimization processing sequence, and the required exposure graphic is obtained. Through this method, it can be detected whether the established auxiliary graphic traversal rule is effective, and the required exposure graphic is obtained by adjusting the conflict resolution, which avoids the repeated cycle of the above optimization steps and improves the work efficiency.

[0098] 6. The method for processing the symmetry of the graphic according to the present application, the processing of the auxiliary graphic further comprises the following steps: the optimization dependency sequence of the first position of the auxiliary graphic is obtained; the entire graphic and the optimization dependency sequence are traversed through the pointer, and the optimization of the auxiliary graphic is based on the traversal result; the second position is traversed according to the optimization result of the auxiliary graphic; and if the processing result of the second position matches the first position, the optimized graphic is obtained. Through this method, the reliability of the graphic optimization sequence and the dependency sequence can be intuitively reflected by traversing the entire graphic and the optimization dependency sequence through the pointer, and the spatial position of the auxiliary graphic is not affected; the optimization result is traversed in the second position, so that the traversal of the second position is the same as the traversal process of the first position, and the symmetry of the graphic is further ensured.

[0099] 7. The method for processing the symmetry of the graphic according to the present application, the preset mode of placing the auxiliary graphic is placed according to the sub-resolution auxiliary graphic rule table. According to the sub-resolution auxiliary graphic rule table, the placement of the auxiliary graphic can be more accurate, which can ensure that the light intensity correction is provided for the main graphic while meeting the symmetry.

[0100] 8. The method for processing the symmetry of the graphic according to the present application, the second position and the first position can be symmetrically arranged or arranged at an included angle. Through this method, the symmetry of the exposure graphic can be further ensured.

[0101] 9. The graphic symmetry processing system of the present invention performs graphic symmetry processing using the graphic symmetry processing method described above. It includes a data analysis module, a data processing module, and an operation module. The data analysis module performs numerical analysis on the main graphic, auxiliary graphic, and traversal process, and transmits the analysis results to the data processing module. The data processing module simulates the placement of auxiliary graphic and transmits the placement instructions to the operation module. The operation module receives the analysis results and instructions from the data processing module and executes the graphic placement and traversal program. It has the same beneficial effects as the graphic symmetry processing method described above, and will not be elaborated here.

[0102] 10. The present invention also provides a storage medium, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the graphic symmetry processing method described above, and has the same beneficial effects as the graphic symmetry processing method described above, which will not be elaborated here.

[0103] The foregoing has provided a detailed description of a graphical symmetry processing method, a graphical symmetry processing system, and a computer medium disclosed in the embodiments of the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention. Any modifications, equivalent substitutions, and improvements made within the principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method of processing pattern symmetry, characterized by: The method comprises the following steps: obtaining a main pattern and a corresponding auxiliary pattern that need to be photoetched; placing the auxiliary pattern outside the main pattern according to a preset mode; obtaining an optimization dependency relationship based on a preset auxiliary pattern traversal rule; performing the auxiliary pattern traversal rule and optimizing the auxiliary pattern based on the result of the optimization dependency relationship; solving a conflict of the optimized auxiliary pattern to obtain a required exposure pattern including the main pattern; The optimization of the auxiliary pattern further comprises the following steps: obtaining an optimization dependency order of a first position of the auxiliary pattern; traversing the entire auxiliary pattern and the optimization dependency order through a pointer, and optimizing the auxiliary pattern based on the traversal result; traversing a second position according to the optimization result of the auxiliary pattern; if the processing result of the second position matches that of the first position, an optimized pattern is obtained; The auxiliary pattern is placed outside the main pattern, the first position is a starting point for traversing the auxiliary pattern according to the optimization order during the reading of the entire pattern, and the second position is a starting point for traversing the auxiliary pattern in different directions of the main pattern. The traversal is performed from one side of the first position, and the traversal data and the optimization dependency order of the side are stored and applied to the side of the second position.

2. The method of claim 1, wherein: The auxiliary pattern is a sub-resolution auxiliary pattern.

3. The method of claim 1, wherein: The auxiliary pattern includes at least one layer, and the interlayer spacing of each layer of the auxiliary pattern is less than 40 nm.

4. The graphic symmetry processing method as described in claim 1, characterized in that... After obtaining the dependency relationship, the following steps are further included: storing the traversal order and the optimization dependency relationship of the pattern based on the optimization order and a directed graph storage method; adding an operation record to each auxiliary pattern that needs to be processed.

5. The method of claim 1, wherein: The conflict solving of the optimized auxiliary pattern comprises the following steps: determining whether the traversal rule leads to a conflict based on the optimization processing result; if no conflict is caused, obtaining a required exposure pattern based on the optimization result; if a conflict is caused, solving the conflict of the auxiliary pattern according to the optimization processing order to obtain a required exposure pattern.

6. The method of claim 1, wherein: The preset mode for placing the auxiliary pattern is based on a sub-resolution auxiliary pattern rule table.

7. The method of claim 6, wherein: The second position and the first position can be symmetrically arranged or arranged at an included angle.

8. A pattern symmetry processing system for performing pattern symmetry processing using the pattern symmetry processing method according to any one of claims 1 to 7, characterized by: The method comprises a data analysis module, a data processing module, and a running module. The data analysis module performs numerical analysis on the main pattern, the auxiliary pattern, and the traversal process, and transmits the analysis result to the data processing module. The data processing module simulates the placement of the auxiliary pattern and transmits the placement instruction to the running module. The running module receives the analysis result and the instruction from the data processing module, executes the pattern placement instruction and the traversal program.

9. A computer medium comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that: The processor executes the computer program to implement the pattern symmetry processing method of any one of claims 1-7.

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