Plasma residue removal apparatus

Abstract

The embodiment of the specification provides a plasma residue removal device, which comprises a radio frequency matcher, a remote ion source, a shielding cover and a process cavity connected with each other, an air distribution plate is arranged at the upper part of the process cavity, the air distribution plate is insulated from the process cavity, and a wafer carrier is connected to the inner wall of the lower part of the air distribution plate in the process cavity. Wherein, the air distribution plate, the wafer carrier, the shielding cover and the process cavity are all made of metal good conductors; in the process of removing photoresist residue, the air distribution plate is configured to be electrically connected to the radio frequency high voltage of the radio frequency matcher, the wafer carrier is configured to be collectively radio frequency grounded with the shielding cover and the process cavity, so that the plasma excited by the remote ion source bombards the wafer on the wafer carrier under the action of direct current bias to remove the residue. The plasma residue removal device only uses a set of radio frequency matchers, that is, the residue removal work that needs to use two sets of radio frequency matchers in the past can be performed, which simplifies the device structure and reduces the device cost.

Description

TECHNICAL FIELD

[0001] The present specification relates to the technical field of semiconductor manufacturing equipment, in particular to a plasma residue removal device. BACKGROUND

[0002] The existing photoetching machine residue removal mechanism generally includes two sets of radio frequency matchers, which are divided into upper radio frequency matchers and lower radio frequency matchers according to their positions and connected devices. The upper radio frequency matcher is connected to the ion source and is used to generate a glow discharge phenomenon in the vacuum chamber to ionize the process gas. The lower radio frequency matcher is connected to the wafer carrier and is set to be electrically opposite to the upper radio frequency matcher. Under the action of direct current bias, the wafer carried by the wafer carrier is exposed to the plasma environment and is continuously bombarded. The photoresist on the wafer is removed under the action of physics (continuous ion bombardment) and chemistry (inductively coupled ionization of high activity reaction medium). However, due to the use of two sets of radio frequency matchers, the structure of the photoetching machine residue removal mechanism is complex and the equipment cost is high. SUMMARY

[0003] In view of the problems existing in the prior art, the purpose of the present application is to provide a plasma residue removal device which has the characteristics of simple equipment structure and low manufacturing cost.

[0004] The embodiments of the present specification provide the following technical solutions:

[0005] A plasma residue removal device, comprising a radio frequency matcher, a remote ion source, a shielding cover and a process cavity connected to each other.

[0006] The upper part of the process cavity is provided with a gas distribution plate, and the gas distribution plate is insulated from the process cavity. The inner wall of the lower part of the process cavity corresponding to the gas distribution plate is connected with a wafer carrier.

[0007] In the process of removing photoresist residue, the gas distribution plate is configured to be electrically connected to the radio frequency high voltage of the radio frequency matcher, and the wafer carrier is configured to be commonly radio frequency grounded with the shielding cover and the process cavity, so that the plasma excited by the remote ion source bombards the wafer carried by the wafer carrier under the action of direct current bias, and removes the residue on the wafer.

[0008] Among them, the gas distribution plate, the wafer carrier, the shielding cover and the process cavity are all made of metal good conductor.

[0009] The plasma residue removal device changes the circuit connection mode of the plasma residue removal device, and when the photoresist residue removal process is performed, the changes can also activate the photoresist on the wafer, and the high-activity gas after ionization continues to bombard, so as to achieve the purpose of removing the residual photoresist. The plasma residue removal device only uses a set of radio frequency matching device to perform the photoresist residue removal process, which can simplify the equipment structure and reduce the manufacturing cost of the equipment.

[0010] The application also provides a scheme, the remote ion source includes an insulating medium tube, a coil sleeved outside the insulating medium tube, and a gas buffer cover connected to the insulating medium tube.

[0011] The lower side edge of the gas buffer cover is connected to the upper side edge of the gas distribution plate.

[0012] The application also provides a scheme, the first end of the coil is electrically connected to the output end of the radio frequency matching device, and the second end of the coil is electrically connected to the gas buffer cover.

[0013] Or, the first end of the coil and the gas buffer cover are connected in parallel to the output end of the radio frequency matching device, and the second end of the coil is radio frequency grounded.

[0014] The gas buffer cover is made of a good metal conductor.

[0015] The application also provides a scheme, the diameter of the insulating medium tube is smaller than the diameter of the gas buffer cover.

[0016] The application also provides a scheme, the gas buffer cover is a horn-shaped.

[0017] The application also provides a scheme, the area of the gas distribution plate is equivalent to the area of the wafer carried by the wafer carrier.

[0018] The application also provides a scheme, the process cavity is also provided with an insulating lining, the insulating lining is arranged between the plasma bombardment area and the inner side wall of the process cavity, and is used for confining plasma, wherein the plasma bombardment area is the area between the gas distribution plate and the wafer carrier.

[0019] The application also provides a scheme, the insulating lining includes a vertical circular ring and a horizontal circular ring perpendicular to each other, the vertical circular ring surrounds the wafer carrier, and the horizontal circular ring abuts against the upper inner wall of the process cavity.

[0020] The application also provides a scheme, wherein the insulating inner lining is further provided with an air extraction hole which is communicated with an air extraction pipeline and used for discharging the ionized high-activity gas.

[0021] The application also provides a scheme, wherein the process cavity is provided with a cavity cover on one side of the gas buffer cover, the uniform gas distribution disc is arranged in the cavity cover and is insulated from the cavity cover through an insulating ring, and the cavity cover is made of a metal good conductor.

[0022] Compared with the prior art, the at least one technical scheme adopted by the embodiment of the present application can achieve the beneficial effects at least including: by using the above-described plasma residual glue removing device, only one set of radio frequency matching device is needed, the device circuit connection mode is changed, and the device is improved in adaptability, so that the work of removing photoresist residual glue which needs to use two sets of radio frequency matching devices in the past can be performed, thereby saving the radio frequency matching device, simplifying the structure of the photoresist removing device, and reducing the manufacturing cost of the device. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0024] Figure 1 is a structural schematic diagram of a plasma residual glue removing device using two sets of radio frequency matching devices in the prior art;

[0025] Figure 2 is a structural schematic diagram of a plasma residual glue removing device using a series wire mode in an embodiment of the present application;

[0026] Figure 3 is a wire connection schematic diagram of the plasma residual glue removing device corresponding to Figure 2 ;

[0027] Figure 4 is a structural schematic diagram of a plasma residual glue removing device using a parallel wire mode in an embodiment of the present application;

[0028] Figure 5 is a wire connection schematic diagram of the plasma residual glue removing device corresponding to Figure 4 ;

[0029] Figure 6 is a wire connection schematic diagram of the plasma residual glue removing device corresponding to Figure 4 ;

[0030] Among them, 1. Upper RF matching unit, 2. Shielding cover, 3. Insulating dielectric tube, 4. Cavity cover, 5. Process cavity, 6. Evacuation pipe, 7. Inlet pipe, 8. Gas nozzle, 9. Coil, 10. Wafer stage, 11. Insulating support, 12. Sealing ring, 13. RF shielding cover, 14. Lower RF matching unit, 15. Gas buffer cover, 16. Gas equalization plate, 17. Insulating ring, 18. Insulating liner, 19. Evacuation vent, 20. Plasma, 30. RF current, 40. RF matching unit, 50. Wafer, 60. Wire, A. Gas equalization plate area, B. Wafer area. Detailed Implementation

[0031] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0032] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. This application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0033] It should be noted that the following description covers various aspects of embodiments within the scope of the appended claims. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any particular structure and / or function described herein is merely illustrative. Based on this application, those skilled in the art will understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspects set forth herein can be used to implement the device and / or practice the method. Additionally, this device and / or method can be implemented using structures and / or functionalities other than one or more of the aspects set forth herein.

[0034] It should also be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of this application. The drawings only show the components related to this application and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0035] In addition, in the description of the specification, it should be understood that the orientation words "up", "down", "inner", "outer" and the like described in the example embodiments of the specification are described with the angle shown in the drawings, and should not be understood as the limitation of the example embodiments of the specification.

[0036] In addition, in the following description, specific details are provided in order to facilitate a thorough understanding of the examples. However, it will be apparent to one of ordinary skill in the art that the described aspects can be practiced without these specific details.

[0037] The following terms are explained:

[0038] Plasma residue removal machine: a device that uses plasma technology to remove residue from the surface of a wafer in a vacuum environment.

[0039] Remote ion source: a kind of plasma generator using the principle of coil induction, generally used for removing photoresist in the photoresist removal machine and cleaning the PECVD (plasma enhanced chemical vapor deposition) reaction cavity.

[0040] Uniform gas disc: a mechanical device that realizes gas guiding device to uniformly spray reaction gas to the surface of wafer.

[0041] Coil: a device that generates magnetic field, which generates magnetic field when current flows through the coil.

[0042] DC bias: a physical phenomenon in plasma, the mechanism is that there are a large number of charged electrons and ions in the plasma, because the mass of electrons is much smaller than that of ions, so that the number of electrons on the boundary of plasma (such as cavity, dielectric tube, wafer, etc.) is higher than that of ions, resulting in negative charge on the boundary object of plasma.

[0043] The existing mechanism for removing photoresist residue is as follows Figure 1As shown, the device includes: an upper radio frequency matcher 1 (or an upper radio frequency system matcher), a shield 2, an insulating medium tube 3, a cavity cover 4, a process cavity 5, a gas extraction pipeline 6, a gas inlet pipeline 7, a gas nozzle 8, a coil 9, a wafer carrier 10, an insulating support 11, a sealing ring 12, a radio frequency shield 13, and a lower radio frequency matcher 14 (or a lower radio frequency system matcher). The upper radio frequency matcher 1 generates a radio frequency source which is introduced into the coil 9. The coil 9 generates an alternating current under the action of the radio frequency. According to Faraday's theorem, the alternating current generates an alternating electromagnetic field. Since the insulating medium tube 3 is a non-conductor and cannot shield the electromagnetic field, the electromagnetic field generated by the coil 9 is fed into the vacuum process cavity 5 through the insulating medium tube 3. Due to the use of inductive coupling, a glow discharge phenomenon is generated. Fresh process gas enters the vacuum process cavity 5 through the gas inlet pipeline 7 and is ionized. The lower radio frequency matcher 14 is fed into the wafer carrier 10, so as to form a capacitive coupling glow discharge at the wafer carrier and the process cavity 5, the cavity cover 4, and the like. Under the action of a direct current bias, the part of the wafer (carried on the wafer carrier 10) exposed to the plasma will be continuously bombarded by ions. At this time, the photoresist on the wafer will be removed under the action of physics (continuous bombardment of ions) and chemistry (inductive coupling ionization of high-activity reaction medium), so as to achieve the purpose of removing the residual photoresist.

[0044] However, the above-mentioned existing photoresist residual photoresist removing mechanism needs two sets of radio frequency matchers, the device structure is complex and the manufacturing cost is high. The present application provides a device using one set of radio frequency matcher for removing photoresist residual photoresist. By changing the circuit connection mode of the device and adapting the device to the new circuit connection, the work of removing photoresist residual photoresist which needs to use two sets of radio frequency matchers in the past can be performed, so as to achieve the purpose of simplifying the device structure and reducing the manufacturing cost of the device.

[0045] The technical solutions provided by the embodiments of the present application are described below with reference to the drawings.

[0046] As shown in Figures 2 to 5 The present application provides a plasma residual photoresist removing device, which includes a radio frequency matcher 40, a remote ion source, a shield 2, and a process cavity 5. The shield 2 is connected to the process cavity 5 and located above the process cavity 5, and the remote ion source is arranged inside the shield 2.

[0047] The upper part of the process cavity 5 is provided with a uniform gas disc 16, which is insulated from the process cavity 5 and connected with the radio frequency matching device 40 through a wire. The wafer carrier 10 is connected to the lower inner wall of the process cavity 5 facing the uniform gas disc 16, and the position of the wafer carrier 10 corresponds to the uniform gas disc 16. It should be noted that, unlike the connection mode of the wafer carrier 10 and the process cavity 5 in the prior art, in the present application, the wafer carrier 10 is connected to the inner wall of the process cavity 5 through a good conductor, or the lower side of the wafer carrier 10 or the protruding mounting part on the lower side of the wafer carrier 10 made of a metal good conductor is directly connected to the inner wall of the process cavity 5, so as to form a good electrical contact between the wafer carrier 10 and the process cavity 5.

[0048] In the process of removing the photoresist residue, the uniform gas disc 16 is configured to be electrically connected to the radio frequency high voltage of the radio frequency matching device 40, and based on the connection relationship among the wafer carrier 10, the shielding cover 2 and the process cavity 5, the wafer carrier 10 is configured to be commonly connected to the radio frequency ground of the shielding cover 2 and the process cavity 5, so that the plasma excited by the remote ion source under the action of the direct current bias bombards the wafer 50 carried by the wafer carrier 10, and removes the residue on the wafer 50.

[0049] In the above-mentioned components of the plasma residue removal device, the uniform gas disc 16, the wafer carrier 10, the shielding cover 2 and the process cavity 5 are all made of a metal good conductor.

[0050] In the above-mentioned scheme, by changing the structure and circuit connection mode of the plasma residue removal device, specifically, the electrically conductive uniform gas disc is additionally arranged above the wafer carrier, the connection between the wafer carrier and the process cavity is changed to be electrically conductive, and the components constituting the radio frequency current loop are all made of a metal good conductor. Figure 2 The positive current and the negative current of the loop are insulated, that is, the uniform gas disc 16 and the process cavity 5 are insulated, so that the circuit connection mode of the plasma residue removal device is changed. When the process of removing the photoresist residue is performed, only one set of radio frequency matching device is needed to perform the photoresist residue removal process, which can simplify the device structure and reduce the manufacturing cost of the device.

[0051] In some embodiments, as shown in Figure 2 and Figure 4 The remote ion source includes an insulating medium tube 3, a coil 9 and a gas buffer cover 15. The coil 9 is sleeved outside the insulating medium tube 3. The upper part of the gas buffer cover 15 is connected to the lower part of the insulating medium tube 3, and the lower side edge of the gas buffer cover 15 is connected to the upper side edge of the uniform gas disc 16, for guiding the plasma generated by the insulating medium tube 3 and the coil 9 into the uniform gas disc 16.

[0052] In some embodiments, the coil 9 and the gas buffer cover 15 are electrically connected in series, as shown in the device connection mode in Figure 2 and the lead wire 60 in Figure 3 . The first end of the coil 9 is electrically connected to the output end of the RF matching device 40, and the second end of the coil 9 is electrically connected to the gas buffer cover 15 made of a good metal conductor. It should be noted that at this time, the gas distribution plate 16 is still configured to be electrically connected to the RF high voltage of the RF matching device 40, and the wafer carrier 10 is still configured to be RF grounded together with the shielding cover 2 and the process cavity 5.

[0053] In other embodiments, the coil 9 and the gas buffer cover 15 are electrically connected in parallel, as shown in the device connection mode in Figure 4 and the lead wire 60 in Figure 5 . The first end of the coil 9 and the gas buffer cover 15 are electrically connected in parallel to the output end of the RF matching device 40, and the second end of the coil 9 is electrically connected to the RF ground, and the gas buffer cover 15 is made of a good metal conductor. It should be noted that at this time, the gas distribution plate 16 is still configured to be electrically connected to the RF high voltage of the RF matching device 40, and the wafer carrier 10 is still configured to be RF grounded together with the shielding cover 2 and the process cavity 5.

[0054] In some embodiments, as shown in Figure 2 and Figure 4 , the diameter of the insulating medium tube 3 is smaller than the diameter of the gas buffer cover 15.

[0055] In some embodiments, as shown in Figure 2 and Figure 4 , the gas buffer cover 15 is in the shape of a horn.

[0056] In some embodiments, as shown in Figure 3 , the area (A in Figure 3 ) of the gas distribution plate 16 and the area (B in Figure 3 ) of the wafer 50 carried on the wafer carrier 10 are equivalent, at this time, the positive plate (the gas distribution plate 16 with an area of A) and the negative plate (the wafer 50 with an area of B) of the capacitive coupling are equivalent. Since the DC bias voltage is positively correlated with the current density, and the current density is inversely proportional to the area, setting the positive plate and the negative plate of the capacitive coupling to be equivalent in area ensures the utilization efficiency of the RF system.

[0057] In some embodiments, as shown in Figure 2 and Figure 4As shown in the figure, the process cavity 5 is also provided with an insulating inner lining 18, which is arranged between the plasma bombardment area and the inner side wall of the process cavity 5, for confining the plasma. The plasma bombardment area mentioned above refers to the area between the gas distribution plate 16 and the wafer carrier 10. Since the insulating inner lining 18 has the function of confining the plasma, the plasma coupled out by the capacitance is confined between the wafer 50 and the gas distribution plate 16, thereby ensuring the utilization efficiency of the radio frequency system.

[0058] Preferably, as shown in the figure, Figure 2 and Figure 4 the insulating inner lining 18 comprises a vertical circular ring and a horizontal circular ring which are perpendicular to each other. The vertical circular ring is arranged around the wafer carrier 10, and the horizontal circular ring is arranged to abut against the upper inner wall of the process cavity 5.

[0059] Preferably, as shown in the figure, Figure 2 the insulating inner lining 18 is also provided with a gas extraction hole 19 which is connected to the gas extraction pipeline 6, for discharging the ionized high-activity gas. It should be noted that, as shown in the figure, Figure 4 the plasma residue removal device can also be provided with a gas extraction hole (not shown in the figure) on the installed insulating inner lining 18. Figure 4

[0060] In some embodiments, as shown in the figures, Figure 2 and Figure 4 the process cavity 5 is provided with a cavity cover 4 on the side facing the gas buffer cover 15, and the gas distribution plate 16 is arranged in the cavity cover 4. The gas distribution plate 16 is insulated from the cavity cover 4 by the insulating ring 17. The cavity cover 4 is made of a good metal conductor.

[0061] Embodiment 1

[0062] A plasma residue removal device, as shown in the figures, Figure 2 and Figure 3 ​As shown, including the radio frequency matching device 40, shield 2, dielectric tube 3, cavity cover 4, process cavity 5, exhaust duct 6, gas duct 7, gas nozzle 8, coil 9, wafer carrier 10, sealing ring 12, gas buffer zone cover 15, gas distribution plate 16, insulating ring 17, insulating liner 18. Radio frequency matching device 40 will be introduced into the coil 9 of the radio frequency source generated by the radio frequency system, the coil 9 generates alternating current under the action of the radio frequency system, according to Faraday's law alternating current generates alternating electromagnetic field. Because the dielectric tube 3 is a non-conductor, it cannot shield the electromagnetic field, and the electromagnetic field generated by the coil is fed into the vacuum process cavity 5 through the dielectric tube 3, and the inductive coupling generates a glow discharge phenomenon. Fresh process gas enters the process cavity 5 from the gas nozzle 8 through the gas duct 7 and is ionized. At the same time, the radio frequency (i.e. radio frequency current) is introduced into the gas buffer zone cover 15 through the coil 9, and since the gas buffer zone cover 15 and the gas distribution plate 16 are both metal conductors, the radio frequency is conducted on the gas distribution plate 16. Shield 2, cavity cover 4, process cavity 5, wafer carrier 10 are all good conductors of metal and are in good contact, together forming a radio frequency ground. At this time, the gas distribution plate 16 and the wafer 50 on the wafer carrier 10 form a capacitive coupled discharge, and the gas distribution plate acts as a positive electrode of capacitive coupling, and the wafer carrier acts as a negative electrode of capacitive coupling.

[0063] Because the DC bias size and the current density are positively correlated, and the current density is inversely proportional to the area, the area of the gas distribution plate 16 and the area of the wafer 50 in the above structure can be configured to be of comparable size; Moreover, an insulating liner 18 can be provided between the plasma bombardment area and the inner side wall of the process cavity 5, which can constrain the plasma function, so that the capacitive coupled plasma is constrained between the wafer and the gas distribution plate, and the utilization efficiency of the radio frequency system is improved.

[0064] In this embodiment, as shown in Figure 3 , the radio frequency matching device 40 is connected to the first end of the coil 9 through the wire 60, the first end of the coil 9 is connected to the gas distribution plate 16 through the wire 60, and the wafer 50 on the wafer carrier 10 (not shown in Figure 3 ) is grounded through the wafer carrier 10 and the wire 60, so as to form a connection mode of the coil 9 and the gas distribution plate 16 in series.

[0065] Embodiment 2

[0066] The component composition and the connection mode between the components of this embodiment are substantially the same as those of the embodiment, as shown in Figure 4 and Figure 5 , the difference is that the connection mode between the coil 9 and the gas distribution plate 16 is in parallel. Specifically, referring to Figure 4 , the three wires 60 from left to right are: CCP radio frequency feed-in (radio frequency access upper plate, the upper plate refers to the gas distribution plate 16); ICP radio frequency feed-in (radio frequency access coil); ICP radio frequency ground. The wire connection principle diagram is shown inFigure 6 as shown.

[0067] In the description, identical or similar parts between the embodiments are not repeatedly described, and each embodiment focuses on the differences from other embodiments.

[0068] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited to this. Any changes or replacements within the technical scope disclosed by the present application can be easily thought of by those skilled in the art, and should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A plasma residue removal device, characterized in that, This includes an RF matching unit, a remote ion source, interconnected shielding enclosures, and process chambers; A gas equalization disk is provided on the upper part of the process cavity. The gas equalization disk is insulated from the process cavity. A wafer stage is connected to the lower inner wall of the process cavity corresponding to the gas equalization disk. In the process of removing photoresist residue, the gas equalization disk is configured to be electrically connected to the radio frequency high voltage of the radio frequency matching device, and the wafer stage is configured to share radio frequency ground with the shield and the process cavity, so that the plasma excited by the remote ion source bombards the wafer carried by the wafer stage under the action of DC bias to remove the photoresist residue on the wafer. The gas equalization disk, the wafer stage, the shielding cover, and the process cavity are all made of metal, which is a good conductor. The remote ion source includes an insulating dielectric tube, a coil sleeved on the outside of the insulating dielectric tube, and a gas buffer cover connected to the insulating dielectric tube. The lower edge of the gas buffer shroud is connected to the upper edge of the gas equalization disk; The first end of the coil is electrically connected to the output end of the RF matching unit, and its second end is electrically connected to the gas buffer cover; or, the first end of the coil and the gas buffer cover are connected in parallel to the output end of the RF matching unit, and the second end of the coil is RF grounded. The gas buffer shroud is made of a good conductor of metal.

2. The plasma residue removal device according to claim 1, characterized in that, The diameter of the insulating medium tube is smaller than the diameter of the gas buffer cover.

3. The plasma residue removal device according to claim 1, characterized in that, The gas buffer zone is horn-shaped.

4. The plasma residue removal device according to claim 1, characterized in that, The area of ​​the gas distribution disk is equivalent to the area of ​​the wafer supported by the wafer stage.

5. The plasma residue removal device according to claim 1, characterized in that, The process cavity is also provided with an insulating liner, which is disposed between the plasma bombardment area and the inner wall of the process cavity to confine the plasma. The plasma bombardment area is the area between the gas equalization disk and the wafer stage.

6. The plasma residue removal device according to claim 5, characterized in that, The insulating liner includes a vertical ring and a horizontal ring that are perpendicular to each other. The vertical ring surrounds the wafer stage, and the horizontal ring abuts against the upper inner wall of the process cavity.

7. The plasma residue removal device according to claim 5, characterized in that, The insulating liner is also provided with an air extraction hole, which is connected to an air extraction pipe for discharging the highly reactive gas after ionization.

8. The plasma residue removal device according to claim 1, characterized in that, The process chamber is provided with a chamber cover on the side facing the gas buffer hood. The gas equalization plate is disposed in the chamber cover and is insulated from the chamber cover by an insulating ring. The chamber cover is made of a good conductor of metal.

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