Substrate processing apparatus

Abstract

The present specification relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus performing substrate processing by pressure conversion between low pressure and high pressure. A substrate processing apparatus includes a process chamber (100), a chamber body (110), a substrate support portion (200), an internal lead portion (300), a first pressure adjusting portion (400), a second pressure adjusting portion (500), and a control portion.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, specifically a substrate processing apparatus that performs substrate processing by switching between high voltage and low voltage. Background Technology

[0002] A substrate processing device is a device used to process substrates such as wafers. It can typically perform processes such as etching, deposition, and heat treatment on the substrate.

[0003] At this point, after deposition is completed and a film is formed on the substrate, further processes are needed to remove impurities from the film and improve its properties.

[0004] In particular, with the emergence of substrates with high aspect ratios in three-dimensional semiconductor devices, in order to meet the step coverage specifications, it is necessary to use methods such as lowering the deposition temperature or using gases with high impurity content, but the removal of impurities in the film will become more difficult.

[0005] Therefore, there is a practical need to develop a substrate processing method and a substrate processing apparatus that can improve the properties of thin films, that is, to remove impurities present in the thin film without reducing the properties of the thin film after the thin film is formed on the substrate.

[0006] Furthermore, not only the thin film on the substrate, but also trace impurities remaining inside the cavity can cause film contamination when deposited. Therefore, in order to solve the above problems, it is necessary to remove impurities inside the cavity, including the substrate support portion supporting the substrate.

[0007] To address these issues, Korean Patent Application No. 10-2021-0045294A discloses a substrate processing method that reduces imperfections on the substrate surface and inside the cavity by repeatedly creating high-pressure and low-pressure environments, thereby improving thin film properties.

[0008] However, when the above-mentioned substrate processing method is applied to existing substrate processing equipment, the processing space of the substrate is relatively large, making it impossible to achieve rapid pressure changes, which presents this problem.

[0009] Furthermore, the problem with conventional substrate processing equipment is that it cannot repeatedly perform processes over a wide pressure range, from low pressure of 0.01 Torr to high pressure of 5 Bar, within a short period of time.

[0010] To improve this problem, the processing space volume of existing substrate processing devices is minimized. However, due to structural limitations of the gas supply section used to supply processing gas to the processing space, dead zones still exist, and this problem recurs.

[0011] Furthermore, by minimizing the volume within the limited processing space and installing a separate gas supply unit adjacent to the substrate support, processing gas can be supplied from one side of the substrate edge. However, this prevents the processing gas from being smoothly delivered to the center of the substrate, resulting in uneven substrate processing.

[0012] Especially in traditional substrate processing equipment, because a pump suction flow path for exhausting the processing space is set between the substrate support and the gas supply section, the processing gas cannot be supplied to the center side of the substrate, which leads to this problem.

[0013] Furthermore, the problem with existing substrate processing apparatuses is that, since substrate processing is performed by repeatedly changing the pressure between high and low pressure, the sealing components of the enclosed processing space are easily damaged, which can lead to the leakage of internal process gases from the high-pressure environment or the inflow of external impurities from the low-pressure environment.

[0014] In this situation, the problem of harmful substances such as process gases leaking to the outside of the process chamber may occur.

[0015] Furthermore, the problem with existing substrate processing equipment is that, due to the repeated pressure changes between high and low pressures on a single production line to complete the exhaust of the processing space, the external vacuum pump connected to the outside is exposed to high pressure and is damaged, resulting in a decrease in durability. Summary of the Invention

[0016] Technical issues

[0017] The purpose of this invention is to provide a substrate processing apparatus that improves the quality and safety of substrate processing by preventing impurities from entering and preventing process gases from leaking to the outside.

[0018] Problem-solving methods

[0019] The purpose of this invention is to solve the aforementioned problems. This invention discloses a substrate processing apparatus, characterized by comprising: a process cavity 100, which further comprises: a cavity body 110, open at the top, with a mounting groove 130 formed at the center and a gate 111 for moving a substrate 1 in and out on one side; a top lead 140, connected to the upper part of the cavity body 110 and forming an internal space; a substrate support 200, inserted into the mounting groove 130 of the cavity body 110, with the substrate 1 disposed thereon; and an internal lead 300, movable vertically within the internal space, wherein, during descent, part of its structure is connected to... The adjacent bottom surfaces 120 of the mounting groove 130 are in close contact, dividing the internal space into a sealed processing space S2 where the substrate support 200 is located and the remaining non-processing space S1; and a first pressure regulating unit 400, which is connected to the processing space S2, to regulate the pressure of the processing space S2; a second pressure regulating unit 500, which is connected to the non-processing space S1, and can regulate the pressure of the non-processing space S1 independently of the processing space S2; and a control unit, which controls the pressure regulation of the processing space S2 and the non-processing space S1 by the first pressure regulating unit 400 and the second pressure regulating unit 500.

[0020] The aforementioned first pressure regulating unit 400 includes: a first gas supply unit 410 for supplying process gas to the aforementioned processing space S2; and a first exhaust unit 420 for exhausting the aforementioned processing space S2.

[0021] The aforementioned second pressure regulating unit 500 includes a second exhaust unit 520, which is connected to an exhaust port 180 provided on one side of the aforementioned process chamber 100, for exhausting the aforementioned non-processing space S1.

[0022] The second pressure regulating unit 500 includes a second air supply unit 510, which is connected to an air supply hole 170 provided on the other side of the process chamber 100 and communicates with the non-processing space S1 to fill the non-processing space S1 with gas.

[0023] The aforementioned second pressure regulating unit 500 includes: a second exhaust unit for venting the non-processing space S1; and a second gas supply unit connected to the non-processing space S1 for supplying filling gas to the non-processing space S1; wherein the aforementioned second gas supply unit may be a gas supply hole 170 formed on one side of the aforementioned process cavity 100, and the aforementioned second exhaust unit may be an exhaust hole 180 formed on the other side of the aforementioned process cavity 100.

[0024] The control unit, after the internal lead section 300 rises and is connected to the processing space S2 and the non-processing space S1, supplies purge gas through the first gas supply section 410 and performs exhaust through the second exhaust section.

[0025] The aforementioned control unit controls at least one of the aforementioned first pressure regulating unit 400 and the aforementioned second pressure regulating unit 500, so that before the aforementioned internal lead portion 300 rises, the pressure of the aforementioned processing space S2 and the aforementioned non-processing space S1 gradually becomes equal.

[0026] In order to perform substrate processing, the control unit adjusts the pressure of the processing space S2 on which the substrate 1 is mounted by the first pressure adjustment unit 400, and realizes variable pressure adjustment within a range between a first pressure higher than normal pressure and a second pressure lower than normal pressure.

[0027] During the substrate processing, the control unit maintains the pressure of the non-processing space S1 at a constant level through the second pressure regulating unit 500.

[0028] During the substrate processing, the control unit maintains the pressure of the non-processing space S1 in a vacuum state through the second pressure regulating unit 500.

[0029] The control unit vents the non-processing space S1 through the second pressure regulating unit 500, thereby regulating the pressure of the non-processing space S1.

[0030] The control unit supplies filling gas to the non-processing space S1 through the second pressure regulating unit 500, thereby regulating the pressure of the non-processing space S1.

[0031] During the substrate processing, the control unit adjusts the pressure of the non-processing space S1 by the second pressure adjustment unit 500 to maintain its pressure lower than that of the processing space S2.

[0032] During the substrate processing, the control unit maintains the pressure of the non-processing space S1 at the second pressure via the second pressure adjustment unit 500.

[0033] The control unit, through the first pressure regulating unit 400, can reduce the pressure of the processing space S2 from the first pressure to atmospheric pressure, and then gradually reduce the pressure of the processing space S2 from atmospheric pressure to the second pressure.

[0034] In order to perform substrate processing, the control unit adjusts the pressure of the processing space S2 through the first pressure adjustment unit 400, adjusting from the first pressure through the second pressure and back to the first pressure, and repeats the pressure adjustment in sequence multiple times.

[0035] The first pressure regulating unit 400 includes a first gas supply unit 410, which is connected to the processing space S2 and supplies process gas to the processing space S2, and is disposed adjacent to the edge of the substrate support unit 200.

[0036] The first pressure regulating unit 400 includes: a first gas supply unit 410, which is connected to the processing space S2 and supplies process gas to the processing space S2; the first gas supply unit 410 includes: a gas injection unit 416, which is disposed at the edge of the mounting groove 130 and injects the process gas; and a gas supply flow path 417, which penetrates the lower surface of the process cavity 100 and supplies the supply gas received from the outside to the gas injection unit 416.

[0037] The aforementioned internal lead section 300 includes: an internal lead 310 that can move up and down in the aforementioned internal space; and a gas supply flow path 320 that is provided inside the aforementioned internal lead 310 and communicates with the aforementioned processing space S2.

[0038] The first pressure regulating unit 400 includes a first gas supply unit 410, which is disposed at the lower part of the internal lead part 300 and injects the supplied process gas into the processing space S2 through the gas supply flow path 320.

[0039] The first air supply unit 410 mentioned above includes: a jet plate 412, which is disposed on the lower side of the internal lead wire unit 300 and is provided with a plurality of jet holes 411.

[0040] The first air supply unit 410 may further include: a jet plate support unit 413, which supports the edge of the jet plate 412 and is connected to the internal lead wire unit 300.

[0041] The first air supply unit 410 may further include a plurality of fastening components 414 that pass through the jet plate support unit 413 and are connected to the internal lead wire unit 300.

[0042] The aforementioned spray plate 412 is disposed on the lower side of the aforementioned internal lead portion 300, and forms a diffusion space S3 for process gas diffusion at the position between it and the aforementioned internal lead portion 300.

[0043] The aforementioned spray plate 412 can be made of metal or quartz material.

[0044] The aforementioned spray plate support 413 may include: a support step 415, which forms a protruding structure towards the center of the inner surface, forming the edge of the bottom surface of the aforementioned spray plate 412.

[0045] The inner surface of the aforementioned insertion mounting groove 330 forms an inclined structure that gradually increases in height from the edge towards the center.

[0046] When the first air supply unit 410 is inserted into the insertion mounting slot 330, its bottom surface forms the bottom surface and plane of the internal lead 310.

[0047] The aforementioned internal lead 310 forms a gas inlet groove 340 on one side of the bottom center, which is connected to the end of the aforementioned gas supply flow path 320.

[0048] The first gas supply unit 410 may further include a diffusion component, which is inserted into the gas inlet groove 340 to diffuse the supplied process gas.

[0049] The aforementioned diffusion component may have an inclined surface on its side, which gradually rises towards the center.

[0050] The aforementioned process cavity 100 includes: a gas inlet flow path 190, which supplies the aforementioned process gas introduced from the outside to the lower surface that is in contact with the aforementioned internal lead portion 300; the aforementioned internal lead portion 300 descends and comes into close contact with the aforementioned bottom surface 120, connecting the aforementioned gas inlet flow path 190 and the aforementioned gas supply flow path 320, and supplying the process gas to the aforementioned gas supply flow path 320.

[0051] The gas supply path 320 may include: a vertical supply path 321, which is located at a position corresponding to the gas inlet path 190 on the edge side of the internal lead 310 and is connected to the gas inlet path 190; and a horizontal supply path 322, which is located from the vertical supply path 321 to the center side of the internal lead 310.

[0052] The aforementioned first pressure regulating unit 400 includes: a high-pressure control unit 430, which controls the pressure of the processing space S2 by performing an exhaust operation, so that the pressure of the processing space S2 is higher than the atmospheric pressure; and a pump control unit 440, which controls the pressure of the processing space S2 by performing a pump operation, so that the pressure of the processing space S2 is lower than the atmospheric pressure.

[0053] The high-pressure control unit 430 includes: a high-pressure exhaust line 431 that connects the processing space S2 and the external exhaust device 1100; a high-pressure control valve 432 disposed on the high-pressure exhaust line 431 to control the amount of process gas flowing from the processing space S2 to the external exhaust device 1100, thereby controlling the pressure of the processing space S2 to remain higher than atmospheric pressure; the pump suction control unit 440 includes: a pump suction exhaust line 441 that connects the processing space S2 and the external vacuum pump 1200; and a pump suction control valve 442 disposed on the pump suction exhaust line 441 to control the amount of process gas flowing from the processing space S2 to the external vacuum pump 1200, thereby controlling the pressure of the processing space S2 to remain lower than atmospheric pressure.

[0054] The aforementioned second exhaust section 520 includes: a non-processing space exhaust line 521 that connects the exhaust port 180 and the external exhaust device 1100; and a non-processing space high-pressure control valve 522, which is disposed on the non-processing space exhaust line 521 to control the amount of filling gas flowing from the non-processing space S1 to the external exhaust device 1100, thereby controlling the pressure of the non-processing space S1 to remain higher than atmospheric pressure.

[0055] The aforementioned second exhaust section 520 includes: a non-processing space pump suction exhaust line 524, which connects the aforementioned exhaust port 180 and the external vacuum pump 1200; and a non-processing space pump suction control valve 525, which is disposed on the aforementioned non-processing space pump suction exhaust line 524 to control the amount of filling gas flowing from the aforementioned non-processing space S1 to the aforementioned external vacuum pump 1200, thereby controlling the pressure of the aforementioned non-processing space S1 to remain below atmospheric pressure.

[0056] The effects of the invention

[0057] The advantage of the substrate processing apparatus in this invention is that by minimizing the volume of the substrate processing space inside the cavity, the pressure change rate over a wider pressure range is increased, thereby enabling rapid pressure conversion from low pressure 0.01 Torr to high pressure 5 Bar, 1 Bar / s.

[0058] Furthermore, the advantage of the substrate processing apparatus of the present invention is that when process gas is sprayed from the upper side of the substrate support, the separate gas supply section at the adjacent position of the substrate support is omitted, thereby reducing the volume of dead corners and minimizing the volume.

[0059] Furthermore, the advantage of the substrate processing apparatus of the present invention is that, since the process gas is sprayed from the upper side of the substrate support onto the substrate, the process gas can be supplied not only to the edge side of the substrate but also to the center side, thereby achieving uniform substrate processing.

[0060] Furthermore, the advantage of the substrate processing apparatus of the present invention is that a buffer space for non-processing space is set between the processing space and the external space of the process chamber, thereby preventing harmful substances such as processing gases in the processing space from leaking to the outside of the process chamber, thus improving the safety of substrate processing.

[0061] Furthermore, the advantage of the substrate processing apparatus of the present invention is that a non-processing space is provided between the processing space and the external space of the process chamber, and by controlling the pressure of the non-processing space, impurities and the like are prevented from flowing into the processing space, thereby improving the quality of substrate processing.

[0062] Furthermore, the advantage of the substrate processing apparatus of the present invention is that by performing binary processing on the exhaust of the processing space according to the pressure, the exhaust efficiency of the processing space is improved, thereby further improving the durability of the apparatus structure. Attached Figure Description

[0063] Figure 1 This is a cross-sectional view illustrating the external structure of the substrate processing apparatus of the present invention.

[0064] Figure 2 The diagram is based on Figure 1 A graph showing the pressure variations in the processing space and non-processing space of the substrate processing apparatus.

[0065] Figure 3 This is a cross-sectional view illustrating another embodiment of the substrate processing apparatus of the present invention.

[0066] Figure 4 The diagram is based on Figure 3 Enlarged cross-sectional view of the gas jet section structure of the substrate processing apparatus.

[0067] Figure 5 The diagram is based on Figure 3 A bottom perspective view of a portion of the gas jet section of the mid-plate processing device.

[0068] Figure 6 The diagram is based on Figure 3 A drawing showing the connection structure of the first pressure regulating unit and the second pressure regulating unit in the first embodiment of the substrate processing apparatus.

[0069] Figure 7 The diagram is based on Figure 1 A drawing showing the connection structure of the first pressure regulating unit and the second pressure regulating unit in a second embodiment of the substrate processing apparatus.

[0070] Figure 8 The diagram is based on Figure 1 A diagram showing the connection structure of the first pressure regulating unit and the second pressure regulating unit in a third embodiment of the substrate processing apparatus.

[0071] Figure 9 The diagram is based on Figure 1 A diagram showing an embodiment of the structure of the second pressure regulating unit in the substrate processing apparatus.

[0072] (Explanation of reference numerals in the attached diagram)

[0073] 1: Substrate 100: Process cavity

[0074] 200: Substrate support portion; 300: Internal lead portion

[0075] 400: First pressure regulating unit; 500: Second pressure regulating unit

[0076] 600: Internal lead drive section; 700: Filling component

[0077] 800: Substrate support pin part; 900: Sealing part

[0078] 1000: Manifold section; 1100: External exhaust device

[0079] 1200: External vacuum pump Detailed Implementation

[0080] The substrate processing apparatus of the present invention will now be described in detail with reference to the accompanying drawings.

[0081] The substrate processing apparatus of the present invention, such as Figure 1 As shown, the system includes: a cavity body 110, which is open at the top and has a mounting groove 130 formed at the center of its bottom surface 120, and a gate 111 for inserting a substrate 1 is formed on one side; a process cavity 100, which is attached to the upper part of the cavity body 110 and includes and forms a top lead 140 for a non-processing space S1; a substrate support 200, which is inserted into the mounting groove 130 of the cavity body 110 and has a substrate 1 mounted on it; an internal lead 300, which is disposed in the internal space and can move up and down. By moving downward, a portion of the lead 300 is in close contact with the bottom surface 120 adjacent to the mounting groove 130, forming a closed processing space S2 inside the substrate support 200; a first pressure regulating unit 400, which communicates with the processing space S2 and regulates the pressure of the processing space S2; and a second pressure regulating unit 500, which communicates with the non-processing space S1 and can independently regulate the pressure of the non-processing space S1 relative to the processing space S2.

[0082] Furthermore, the substrate processing apparatus of the present invention may additionally include an internal lead drive unit 600 that penetrates the upper surface of the process cavity 100 and drives the internal lead unit 300 to move up and down.

[0083] Furthermore, the substrate processing apparatus of the present invention may further include a control unit, which uses a first pressure regulating unit 400 and a second pressure regulating unit 500 to control the pressure of the processing space S2 and the non-processing space S1.

[0084] Furthermore, the substrate processing apparatus of the present invention may include a filling member 700, which is installed between the inner surfaces of the substrate support portion 200 and the mounting groove 130, and occupies at least a portion of the space between the inner surfaces of the substrate support portion 200 and the mounting groove 130.

[0085] Furthermore, the substrate processing apparatus of the present invention may further include: a substrate support pin portion 800, which supports the substrate 1 that is moved into and out of the process cavity 100 and is disposed on the substrate support portion 200.

[0086] Here, the substrate 1 that is the object of processing can be understood as all substrate devices, including substrates used in display devices such as LCD, LED, and OLED, semiconductor substrates, solar cell substrates, and glass substrates.

[0087] The aforementioned process cavity 100, as a structure that forms a non-processing space S1 inside, can have various structural forms.

[0088] For example, the aforementioned process cavity 100 may include: a cavity body 110 with a top opening; and a top lead 140 that covers the opening at the top of the cavity body 110 and together with the cavity body 110 forms a closed non-processing space S1.

[0089] Furthermore, the aforementioned process cavity 100 may include: a bottom surface 120 forming the bottom of the non-processing space S1; and a mounting groove 130 disposed on the bottom surface 120 and having a substrate support portion 200 thereon.

[0090] Furthermore, the aforementioned process cavity 100 may further include a gate valve 150 for opening and closing a gate 111 formed on one side of the cavity body 110 to move the substrate 1 into it.

[0091] Furthermore, in order to facilitate the installation of the substrate support ring 820 in the substrate support portion 800 described later, the aforementioned process cavity 100 may additionally include a support pin mounting groove 160 disposed on the lower surface.

[0092] Furthermore, the aforementioned process cavity 100 may include a gas inlet flow path 190, which supplies gas introduced from the outside to the lower surface that contacts the internal lead portion 300.

[0093] Furthermore, the aforementioned process cavity 100 may further include: an air supply port 170, which is connected on one side to the second air supply section 510 described later, and supplies filling gas to the non-processing space S1.

[0094] Furthermore, the aforementioned process cavity 100 may further include an exhaust port 180, which is connected to the second exhaust section 520 described later on the other side, so that the non-processing space S1 can be vented.

[0095] The top of the aforementioned cavity body 110 is open, and together with the top lead 140 described later, it forms a closed non-processing space S1 inside.

[0096] At this time, the cavity body 110 can be made of a metallic material including aluminum, and in another example it can be made of a metallic material, and is configured in a hexagonal shape similar to the cavities disclosed in the prior art.

[0097] The aforementioned top lead 140 is attached to the upper side of the upper open cavity body 110, and structurally, it can form a closed non-processing space S1 inside together with the cavity body 110.

[0098] At this time, the top lead 140 can be formed into a planar rectangular shape corresponding to the shape of the cavity body 110, and can be made of the same material as the cavity body 110.

[0099] Furthermore, the top lead 140 may have multiple through holes for the internal lead drive 600 described later to pass through, and its bottom surface is combined with the end of the bellows 630 described later, so as to prevent various gases and foreign objects from leaking to the outside.

[0100] Alternatively, it is also possible to omit the structure of the top lead 140 and set the cavity body 110 as an integral structure that forms a sealed non-processing space S1 inside.

[0101] The aforementioned process cavity 100 may include: a bottom surface 120 of a base plate on which a non-processing space S1 is formed in the lower inner surface; and a mounting groove 130 formed on the bottom surface 120 and provided with the substrate support portion 200 described later.

[0102] More specifically, such as Figure 1 The process cavity 100 shown above has a stepped structure corresponding to the substrate support 200 described later formed on the center side of the lower surface, and a mounting groove 130 is formed therein, with a bottom surface 120 formed at the edge of the mounting groove 130.

[0103] That is, the above-mentioned process cavity 100 has a mounting groove 130 for setting the substrate support 200 on its inner lower surface. The groove has a stepped structure, and the other part can be defined as the bottom surface 120, which is higher than the height of the mounting groove 130.

[0104] The gate valve 150 described above is used to open and close the gate 111 formed on one side of the cavity body 110. It can have various structural forms as it has such a structure that can be moved into the substrate 1.

[0105] At this time, the gate valve 150 achieves close contact or disengagement with the cavity body 110 through up-down driving and forward-backward driving, thus closing or opening the gate 111. As another example, the gate 111 can be opened or closed by a single driving method along the diagonal direction. In this process, various forms of driving methods disclosed in the prior art, such as cylinders, cams, and electronic devices, can also be applied.

[0106] The aforementioned support pin mounting groove 160 is a structure that supports the substrate 1 and is provided on the substrate support portion 200, or it is a structure that is separated upward from the substrate support portion 200 to support the substrate 1. It can also have various structural forms as a structure for providing a substrate support pin portion 800 for inserting and removing the substrate 1.

[0107] For example, the aforementioned support pin mounting groove 160 can be formed as a planar annular groove corresponding to the substrate support ring 820, for accommodating the substrate support ring 820 described later.

[0108] At this time, the aforementioned support pin mounting groove 160 can be provided on the lower surface of the process cavity 100, corresponding to the position of the mounting substrate support ring 820, or more specifically, it can be provided in the mounting groove 130.

[0109] That is, the aforementioned support pin mounting groove 160 can be provided in the mounting groove 130 which forms a stepped structure starting from the bottom surface 120, and has a certain depth when the base plate support ring 820 is placed there, so that it can move up and down.

[0110] Therefore, the aforementioned support pin mounting groove 160 is provided with a substrate support ring 820, and a plurality of substrate support pins 810 pass upward through the filling member 700 and the substrate support plate 210.

[0111] Furthermore, since the support pin mounting groove 160 is formed in the mounting groove 130 and has a certain volume, the volume of the processing space S2 formed by the internal lead portion 300 (described later) will increase, which is a problem.

[0112] To improve the above problems, by installing the filling component 700 (described later) in the mounting slot 130 and covering the support pin mounting slot 160, the space formed between the processing space S2 and the support pin mounting slot 160 can be blocked, thereby minimizing the volume of the processing space S2.

[0113] More specifically, when the aforementioned support pin mounting groove 160 is absent, the area of ​​the dead zone increases because a separate space is needed below the substrate support plate 210 for the substrate support pin 810 and the substrate support ring 820. Therefore, in order to eliminate the dead zone, the support pin mounting groove 160 can be provided, so that the substrate support pin 810 and the substrate support ring 820 can be inserted inside when descending.

[0114] In addition, unlike the above, the support pin mounting groove 160 is not provided on the bottom surface 120 of the process cavity 100, but can be provided on the filling member 700 provided in the mounting groove 130.

[0115] That is, the aforementioned support pin mounting groove 160 has a certain depth on the upper surface of the filling member 700. Specifically, its depth is equivalent to the embedding depth of the substrate support ring 820 and the substrate support pin 810. When embedded in the filling member 700, it can rise to support the substrate 1.

[0116] In addition, the substrate support pin 810 can be provided through the filling member 700 at this time.

[0117] The aforementioned air supply port 170 may be a structure provided on one side of the cavity body 110 of the process cavity 100 and connected to the second air supply unit 510.

[0118] For example, the aforementioned air supply hole 170 can be formed on one side of the cavity body 110 by processing, or it can be a through hole formed on one side of the cavity body 110.

[0119] Therefore, the above-mentioned air supply port 170 is provided with a second air supply section 510 and can be connected to the non-processing space S1 and the second air supply section 510, so that filling gas can be supplied to the non-processing space S1.

[0120] The aforementioned exhaust port 180 is located on the other side of the cavity body 110 of the process cavity 100 and can be a structure connected to the second exhaust section 520.

[0121] For example, the aforementioned vent 180 may be formed on the other side of the cavity body 110 by processing, or it may be a through-hole formed on the other side of the cavity body 110.

[0122] Therefore, the above-mentioned exhaust port 180 can perform exhaust to the non-processing space S1 by installing the second exhaust section 520.

[0123] The gas inlet flow path 190 described above is a structure provided on the lower surface of the process cavity 100, which supplies process gas introduced from the outside to the position that contacts the internal lead portion 300, and can have various structural forms.

[0124] For example, the gas inlet flow path 190 described above can be connected to the external process gas storage section through the lower or side surface of the cavity body 110, and the internal lead portion 300 in the lower surface is formed at the position corresponding to the gas supply flow path 320 described later.

[0125] When the gas inlet flow path 190 descends and comes into close contact with the bottom surface 120 after the internal lead portion 300 descends, it can be connected to the gas inlet flow path 320, thereby supplying process gas to the gas inlet flow path 320.

[0126] In addition, the gas inlet flow path 190 described above can be formed by a pipe installed on the lower surface of the process chamber 100, or, as another example, can be formed inside the chamber body 110 by machining.

[0127] Furthermore, the aforementioned gas inlet flow path 190 may be formed at at least one of the positions on the lower surface of the process cavity 100 adjacent to the edge of the substrate 1 corresponding to the gas supply flow path 320 described later.

[0128] The aforementioned substrate support 200 is disposed within the processing space S2 and serves as a structure for placing the substrate 1 on the upper surface, and can have various structural forms.

[0129] That is, the substrate support portion 200 supports the substrate 1 by placing the substrate 1 on the upper surface and fixes it during the substrate processing.

[0130] Furthermore, by providing a heater inside, the substrate support 200 can create a temperature environment for the processing space S2 used for substrate processing.

[0131] For example, the substrate support portion 200 may include: a substrate support plate 210, which is planar and circular, with the substrate 1 disposed on its upper surface; and a substrate support shaft 220, which is connected to the substrate support plate 210 and can penetrate the lower surface of the process cavity 100.

[0132] Furthermore, the aforementioned substrate support portion 200 may include a heater for heating the substrate 1 disposed within the substrate support plate 210.

[0133] The aforementioned substrate support plate 210, as a structure on which the substrate 1 is mounted, can be a planar circular plate structure corresponding to the shape of the substrate 1.

[0134] At this time, the substrate support plate 210 is equipped with a heater inside, and a process temperature for processing the substrate is formed in the processing space S2. The process temperature is about 400°C to 700°C.

[0135] The aforementioned substrate support shaft 220 serves as the lower surface of the through-process cavity 100 and is connected to the substrate support plate 210, and can have various structural forms.

[0136] The aforementioned substrate support shaft 220 passes through the lower surface of the process cavity 100 and can be combined with the substrate support plate 210. Various wires for supplying power to the heater are provided inside it.

[0137] Furthermore, the substrate processing apparatus in this invention, such as Figure 2 As shown, the substrate processing is completed by repeatedly changing the high-pressure and low-pressure environments in a short period of time. More specifically, it requires repeatedly changing the pressure range from 5 Bar to 0.01 Torr at a pressure change rate of 1 Bar / s.

[0138] However, considering the large volume of the internal space of the cavity body 110, it is impossible to achieve the above-mentioned pressure change rate. Therefore, it is necessary to reduce the volume of the processing space S2 used for substrate processing to a minimum.

[0139] Therefore, the substrate processing apparatus of the present invention includes: an internal lead portion 300, which is disposed in the internal space and can move up and down, and moves down to make close contact with a portion of the process cavity 100 so that the substrate support portion 200 forms a closed processing space S2 inside.

[0140] The aforementioned internal lead portion 300 is disposed in the internal space and can move up and down. By moving a portion of it downwards, it can be in close contact with the process cavity 100, and can be a structure in which the substrate support portion 200 forms a closed processing space S2 inside.

[0141] That is, the aforementioned internal lead portion 300 is provided in the internal space and can move up and down. By moving a part of it downward, it can be closely attached to the bottom surface 120 adjacent to the mounting groove 130. The internal space can be divided into a closed processing space S2 where the substrate support portion 200 is located, and a non-processing space S1.

[0142] Therefore, the aforementioned internal lead portion 300 can be disposed on the upper side of the substrate support portion 200 in the non-processing space S1, and can move up and down. By moving downward, it can make close contact with at least a portion of the internal surface of the process cavity 100, thereby forming a closed processing space S2 between the inner lower surfaces of the process cavity 100 as needed.

[0143] Therefore, the substrate support 200 is located within the processing space S2, and substrate processing of the substrate 1 mounted on the substrate support 200 can be performed within the minimized processing space S2.

[0144] For example, after the internal lead portion 300 descends, its edge position is in close contact with the bottom surface 120, thereby forming a closed processing space S2 between the bottom surface and the inner lower surface of the process cavity 100.

[0145] In addition, as another example, it is certainly possible to form a sealed processing space S2 by lowering the internal lead portion 300 so that its edge is in close contact with the inner side of the process cavity 100.

[0146] In the aforementioned internal lead portion 300, its edge descends and comes into close contact with the bottom surface 120 to form a sealed processing space S2, and the substrate support portion 200 installed in the mounting groove 130 can be disposed within the processing space S2.

[0147] That is, the aforementioned internal lead section 300 Figure 1 As shown, after the downward movement, its edge is in close contact with the bottom surface 120, which forms a stepped structure with the mounting groove 130 and is located at a higher position. In this way, a closed processing space S2 can be formed between the bottom surface and the mounting groove 130.

[0148] At this time, a substrate support 200 is provided in the mounting slot 130. More specifically, by providing a substrate support plate 210, the volume of the processing space S2 is minimized and the substrate 1 is positioned on top.

[0149] In this process, in order to minimize the volume of the processing space S2, the shape of the mounting groove 130 corresponds to the shape of the substrate support portion 200 on which the processing space S2 is provided. Specifically, a cylindrical groove structure corresponding to the circular substrate support plate 210 can be formed.

[0150] In other words, in the mounting space formed by the mounting groove 130, in order to minimize the remaining space, a shape corresponding to the shape of the substrate support plate 210 can be formed, apart from the space for mounting the substrate support plate 210 and the insulator portion.

[0151] In this process, in order to prevent interference between the substrate 1 mounted on the substrate support plate 210 and the internal lead portion 300, the bottom surface 120 is set at a higher height than the top height of the substrate 1 mounted on the substrate support plate 200.

[0152] Furthermore, the wider the gap between the substrate 1 mounted on the substrate support 200 and the bottom surface of the internal lead portion 300, the larger the volume of the processing space S2 becomes. Therefore, while preventing interference between the substrate 1 and the internal lead portion 300, the height of the bottom surface 120 can be set at the position where the gap between them is minimized.

[0153] The aforementioned internal lead section 300, which moves up and down via the internal lead drive section 600, can have various structures.

[0154] The aforementioned internal lead section 300 can be a structure that moves up and down within the internal space via the internal lead drive section 600.

[0155] At this time, the aforementioned internal lead portion 300 can cover the mounting groove 130 on the plane, and the size and structure of its edge portion correspond to a part of the bottom surface 120. At the same time, after the edge portion is in close contact with the bottom surface 120, a sealed processing space S2 can be formed at the position between it and the mounting groove 130.

[0156] In addition, as another example, the aforementioned internal lead portion 300 has its edge portion closely attached to the inner side of the process cavity 100 to form a processing space S2, which is also of course possible.

[0157] In addition, in order to effectively achieve and maintain the process temperature within the sealed processing space S2 formed by moving in the vertical direction, the aforementioned internal lead portion 300 can be made of a material with excellent heat insulation properties, thereby preventing the temperature of the processing space S2 from being lost to other structures such as the internal space.

[0158] Furthermore, the aforementioned internal lead section 300 may be provided with a gas supply flow path 320 so that the process gas received from the aforementioned gas inlet flow path 190 can be delivered to the first gas supply section 410 described later.

[0159] For example, the internal lead section 300 may include: an internal lead 310 that can move up and down in the internal space; and a gas supply flow path 320 disposed inside the internal lead 310 and connected to the internal processing space S2.

[0160] Furthermore, the aforementioned internal lead 310 can form an insertion mounting groove 330, on the bottom surface of which there is an insertion-provided first air supply section 410 (described later).

[0161] Furthermore, a gas inlet groove 340 can be formed on the bottom center side of the aforementioned internal lead 310, which is connected to the end of the gas supply flow path 320.

[0162] The aforementioned internal lead 310 is a structure that can move up and down in the internal space, and its size and shape correspond to the size and shape of the mounting groove 130 covering the process cavity 100.

[0163] For example, the aforementioned internal lead 310, as a circular flat plate structure, can form a planar shape structure corresponding to the substrate 1.

[0164] The gas supply path 320 described above, being a structure located inside the internal lead 310 and connected to the processing space S2, can have various structural forms.

[0165] At this time, the gas supply flow path 320 is similar to the gas inlet flow path 190, and is formed by a pipe provided inside the internal lead 310. As another example, it can be provided inside the internal lead 310 by processing.

[0166] In addition, after the internal lead 310 descends, the gas supply flow path 320 comes into close contact with the bottom surface 120, so that it can be connected to the gas inlet flow path 190. The process gas is received through the gas inlet flow path 190 and then supplied to the first gas supply unit 410 through the gas inlet groove 340 described later.

[0167] Therefore, the gas supply path 320 may include: a vertical supply path 321, which is located at a position corresponding to the gas inlet path 190 on the edge side of the internal lead 310 and connected to the gas inlet path 190; and a horizontal supply path 322, which is located from the vertical supply path 321 to the center side of the internal lead 310.

[0168] That is, a vertical supply flow path 321 is provided at a position corresponding to the plane of the gas inlet flow path 190 on the edge side of the internal lead 310. After receiving the process gas from the gas inlet flow path 190, the process gas is transported to the gas inlet tank 340 through a horizontal supply flow path 322 that extends from the vertical supply flow path 321 and is provided along the center side of the internal lead 310.

[0169] In the above case, process gas is received from gas inlet flow path 190 through vertical supply flow path 321. In order to minimize gas leakage generated at the contact surface between internal lead portion 300 and process cavity 100, the inner diameter of vertical supply flow path 321 can be greater than or equal to the inner diameter of gas inlet flow path 190.

[0170] The aforementioned insertion into the mounting slot 330 can be a structure in which at least a portion of the first air supply section 410, described later, is inserted into the bottom surface of the internal lead 310.

[0171] Therefore, the aforementioned insertion mounting groove 330 can be formed on the bottom surface of the internal lead 310 in a shape corresponding to the first gas supply section 410, and a gas inlet groove 340 can be additionally provided on the center side.

[0172] At this time, the aforementioned insertion mounting groove 330 forms a diffusion space S3 between itself and the first gas supply section 410 described later. In order to increase the volume of the diffusion space S3 and guide the process gas supplied through the gas inlet groove 340 to diffuse smoothly in the horizontal direction, the inner surface can form an increasingly higher inclined structure from the edge to the center.

[0173] That is, the inner surface of the aforementioned insertion mounting groove 330 can form a triangular pyramid structure, with the radius of one side of the edge increasing along the lower direction, forming an inclined structure.

[0174] The gas inlet groove 340 is connected to the end of the gas supply flow path 320 on one side of the bottom center, which can form a structure for injecting process gas into the diffusion space S3.

[0175] At this point, the gas inlet trough 340, with its inner surface vertically arranged, can supply process gas. As another example, its diameter gradually increases downwards to form an inclined structure, which guides the supplied process gas to diffuse and supply in the horizontal direction, that is, towards the edge.

[0176] The first pressure regulating unit 400 is connected to the processing space S2 and can have various structural forms as a structure for regulating the pressure of the processing space S2.

[0177] For example, the first pressure regulating unit 400 described above may include: a first gas supply unit 410 that supplies process gas to the processing space S2; and a first exhaust unit 420 that exhausts gas from the processing space S2.

[0178] Furthermore, the first pressure regulating unit 400, as an embodiment of the first exhaust unit 420, may additionally include: a high pressure control unit 430, which controls the pressure of the processing space S2, which is higher than the normal pressure, by venting the processing space S2; and a pump control unit 440, which controls the pressure of the processing space S2, which is lower than the normal pressure, by pumping the processing space S2.

[0179] That is, the first pressure regulating unit 400 described above can regulate the pressure of the processing space S2 by supplying process gas to the processing space S2 and appropriately venting the processing space S2. For example... Figure 2 As shown, this allows for repeated pressure changes between high and low pressure environments in a short period of time.

[0180] More specifically, the pressure in the processing space S2 can be repeatedly and rapidly varied at a level of 1 Bar / s, ranging from 5 Bar to 0.01 Torr.

[0181] In particular, the first pressure regulating unit 400 can reduce the pressure of the processing space S2 from the first pressure to atmospheric pressure, and can also reduce the pressure of the processing space S2 from atmospheric pressure to the second pressure of vacuum in stages.

[0182] In addition, the first pressure regulating unit 400 can change the pressure of the processing space S2 from the first pressure to the second pressure and then back to the first pressure. Repeating this pressure change multiple times in sequence is for the purpose of processing the substrate.

[0183] The first gas supply unit 410 is connected to the processing space S2 and can have various structural forms as a structure for supplying process gases.

[0184] For example, such as Figure 1 The first gas supply unit 410 shown above includes: a gas supply nozzle 416, which is exposed to the processing space S2 and supplies process gas to the processing space S2; and a gas supply flow path 417, which passes through the process cavity 100 and is connected to the gas supply nozzle 416, and supplies process gas through the gas supply nozzle 416.

[0185] At this time, as Figure 1 The first gas supply unit 410 shown above is disposed adjacent to the substrate support unit 200 at the edge of the mounting groove 130 and supplies process gas to the processing space S2.

[0186] The gas supply nozzle 416 is exposed to the processing space S2 and can have various structural forms as a structure for supplying process gas into the processing space S2.

[0187] For example, the gas supply nozzle 416 is disposed at the edge of the mounting groove 130, adjacent to the side of the substrate support plate 210, and can spray process gas upward or to the side of the substrate support plate 210 to supply process gas to the processing space S2.

[0188] At this time, the gas supply nozzle 416 is located at the edge of the mounting groove 130 and surrounds the substrate support plate 210, and can spray process gas from at least a portion of the side of the planar substrate support plate 210.

[0189] For example, the gas supply nozzle 416 described above can inject process gas from the edge of the mounting groove 130 to the bottom of the internal lead portion 300. After the volume of the processing space S2 is minimized, process gas can be supplied in order to create the required pressure environment in the processing space S2 in a short time.

[0190] The aforementioned gas supply path 417 penetrates the lower surface of the process chamber 100 and is connected to the external process gas storage section, while simultaneously supplying the received process gas to the process gas supply nozzle 416.

[0191] At this time, the gas supply flow path 417 can be a pipe that runs through the lower surface of the process chamber 100. As another example, it can be installed by machining the lower surface of the process chamber 100.

[0192] In addition, the gas supply flow path 417 can be a structure corresponding to the gas inlet flow path 190, or it can be a structure that replaces or is connected to the gas inlet flow path 190.

[0193] In addition, as another example, the aforementioned first gas supply unit 410, such as Figure 3 As shown, it may include: a spray plate 412, which is disposed on the lower side of the internal lead portion 300 and has a plurality of spray holes 411; and a spray plate support portion 413, which supports the edge of the spray plate 412 and is connected to the bottom of the internal lead portion 300.

[0194] Furthermore, the aforementioned first air supply unit 410 may additionally include: a plurality of fastening components 414 that penetrate the injection plate support unit 413 and are combined with the internal lead wire unit 300.

[0195] The aforementioned injection plate 412 is disposed on the lower side of the internal lead section 300, and can inject process gas into the processing space S2 through multiple injection holes 411.

[0196] At this time, the aforementioned spray plate 412 is disposed at a preset interval in the aforementioned internal lead portion 300, thereby forming a diffusion space S3 in which process gas diffuses between the internal lead portion 300 and the internal lead portion 300.

[0197] In addition, the aforementioned spray plate 412 can be made of metal or quartz material, which in particular can prevent the heat generated from the substrate support 200 from being directly transferred to the internal lead portion 300, thus preventing the internal lead portion 300 from bending or being damaged due to thermal stress.

[0198] Therefore, the aforementioned spray plate 412 can be made of SUS or quartz material with excellent thermal insulation properties, and the bottom surface can be reinforced with thermal insulation properties or subjected to heat-reflective surface treatment.

[0199] The aforementioned injection holes 411 penetrate the aforementioned injection plate 412 in the vertical direction, and multiple holes are formed over the entire area, so that the process gas can be injected uniformly.

[0200] The aforementioned jet plate support 413, as a structure supporting the aforementioned jet plate 412, can have various structural forms.

[0201] For example, the aforementioned spray plate support 413 can be configured as an annular shape to wrap around the edge of the circular spray plate 412, and the installation of the spray plate 412 can be guided by supporting the edge position of the spray plate 412.

[0202] To this end, the aforementioned spray plate support portion 413 protrudes inward to the center side to form a support step portion 415, which forms the bottom edge position of the spray plate 412. This can prevent direct contact between the spray plate 412 and the internal lead portion 300, buffer the thermal deformation of the spray plate 412, and thus prevent direct heating of the internal lead portion 300.

[0203] In addition, such as Figure 4 and Figure 5 The above-described jet plate support 413 is provided by a plurality of fastening members 414, which are fastened to the bottom of the internal lead wire 310, thereby supporting the jet plate 412.

[0204] In this case, the first air supply unit 410 can be inserted into the insertion mounting slot 330, and in the state of being inserted into the insertion mounting slot 330, the bottom surface, that is, the bottom of the injection plate 412 and the injection plate support 413, can form a planar structure with the bottom of the internal lead wire 310.

[0205] In addition, the first gas supply unit 410 may be further provided with a diffusion component (not shown), which is inserted into the gas inlet groove 340 to diffuse the supplied process gas in the horizontal direction.

[0206] At this time, the aforementioned diffusion component is formed in the shape of a cone or frustum with an inclined surface on the side, such that its height increases continuously along the center, and the supplied process gas is diffused horizontally along the edge side through the gas inlet groove 340.

[0207] Therefore, the aforementioned diffusion component can be supported at the bottom of the internal lead 310, or, as another example, can be installed on the top of the spray plate 412.

[0208] The aforementioned first exhaust section 420 is a structure that performs exhaust on the processing space S2, and can have various structural forms.

[0209] For example, the first exhaust section 420 is connected to the processing space S2 and includes an external exhaust device installed on the outside, thereby controlling the exhaust volume of the processing space S2 and adjusting the pressure of the processing space S2.

[0210] More specifically, the first exhaust section 420 may include: a high-pressure control section 430, which controls the pressure of the processing space S2, which is higher than the normal pressure, by exhausting the processing space S2; and a pump control section 440, which controls the pressure of the processing space S2, which is lower than the normal pressure, by pumping.

[0211] The aforementioned high-pressure control unit 430, as a structure that controls the pressure of the processing space S2, which is higher than the atmospheric pressure, by venting the processing space S2, can have various structural forms.

[0212] That is, when the pressure in the processing space S2 is higher than the atmospheric pressure, the high-pressure control unit 430 adjusts the pressure of the processing space S2, so it can be a structure for venting the processing space S2.

[0213] For example, such as Figure 6 The high-pressure control unit 430 shown above may include: a high-pressure exhaust line 431, which is connected to the exhaust port of the processing space provided in the manifold 1000 described later and the external exhaust device 1100; and a high-pressure control valve 432, which is provided in the high-pressure exhaust line 431 and is used to control the pressure of the processing gas flowing into the processing space S2.

[0214] In addition, the high-pressure control unit 430 is located at the front end of the high-pressure control valve 432 in the high-pressure exhaust line 431, and also includes a high-pressure on / off valve 433 for determining the opening and closing of the high-pressure exhaust line 431.

[0215] Furthermore, the high-pressure control unit 430 may additionally include a pressure relief valve 434, which is connected in parallel with the high-pressure on / off valve 433 to the high-pressure exhaust pipeline 431.

[0216] The aforementioned high-pressure exhaust line 431 connects the exhaust port of the processing space located in the manifold section 1000 with the external exhaust device 1100, and forms a flow path for supplying process gas to the processing space S2.

[0217] The aforementioned high-pressure control valve 432 is installed on the high-pressure exhaust line 431 to control the pressure of the processing gas flowing into the processing space S2, thereby controlling the exhaust volume through the high-pressure exhaust line 431.

[0218] At this time, the pressure of the high-pressure control valve 432 can be checked by a pressure instrument (not shown) installed on the high-pressure exhaust pipe 431, and control can be performed by a control unit (not shown) that sends control signals.

[0219] The aforementioned high-pressure on / off valve 433 is installed at the front end of the high-pressure control valve 432 in the high-pressure exhaust pipeline 431, and is a structure used to determine the opening and closing of the high-pressure exhaust pipeline 431.

[0220] That is, the high-pressure on / off valve 433 can open the high-pressure exhaust line 431 when the processing space S2 is in a high-pressure state, and close the high-pressure exhaust line 431 when the processing space S2 is in a low-pressure state, through the opening and closing action of the high-pressure exhaust line 431.

[0221] The aforementioned pressure relief valve 434 is installed in parallel with the high-pressure on / off valve 433 on the high-pressure exhaust pipeline 431. When an abnormal high pressure exceeding the preset value is detected, the valve can be mechanically opened to exhaust the gas.

[0222] The aforementioned high-pressure on / off valve 433 is installed at the front end of the high-pressure control valve 432 in the high-pressure exhaust pipeline 431, and is a structure used to determine the opening and closing of the high-pressure exhaust pipeline 431.

[0223] That is, the high-pressure on / off valve 433 can open the high-pressure exhaust line 431 when the processing space S2 is in a high-pressure state, and close the high-pressure exhaust line 431 when the processing space S2 is in a low-pressure state, through the opening and closing action of the high-pressure exhaust line 431.

[0224] The aforementioned pressure relief valve 434 is installed in parallel with the high-pressure on / off valve 433 on the high-pressure exhaust pipeline 431. When an abnormal high pressure exceeding the preset value is detected, the valve can be mechanically opened to exhaust the gas.

[0225] In order to improve the safety of the design of the pressure relief valve 434, the valve can be mechanically opened when high pressure is detected, such as pressure above 5 Bar, so as to prevent damage to the device by excessive pressure.

[0226] The pump control unit 440 may include: a pump exhaust line 441 that connects the exhaust port of the processing space to an external vacuum pump 1200; and a pump control valve 442 that is provided in the pump exhaust line 441 to pump the processing space S2 and thereby control its pressure to be lower than atmospheric pressure.

[0227] In addition, the pump suction control unit 440 may also be provided with a pump suction on / off valve 443, which is located at the front end of the pump suction control valve 442 in the pump suction exhaust line 441 and is used to determine the opening and closing of the pump suction exhaust line 441.

[0228] Furthermore, the aforementioned pump suction control valve 440 may further include a slow suction valve 444, which is arranged in parallel with the pump suction on / off valve 443 in the pump suction exhaust line 441, thereby controlling the pump suction volume.

[0229] The aforementioned pump exhaust line 441 allows the exhaust port of the processing space located in the manifold section 1000 to be connected to the external vacuum pump 1200, thus forming a flow path for supplying process gas to the processing space S2.

[0230] The aforementioned pump suction control valve 442 is installed on the pump suction exhaust line 441 as a structure to control the pressure of the process gas flowing into the processing space S2 at a pressure lower than atmospheric pressure. The corresponding exhaust volume can be controlled through the pump suction exhaust line 441.

[0231] At this time, the pressure of the pump suction control valve 442 can be checked by a pressure instrument (not shown) installed on the press exhaust line 441, and the corresponding control can be performed by a control unit (not shown) that sends control signals.

[0232] The aforementioned pump suction on / off valve 443 is installed at the front end of the pump suction control valve 442 in the pump suction and exhaust pipeline 441, and can be a structure that determines whether the pump suction and exhaust pipeline 441 is open or closed.

[0233] That is, the pump suction on / off valve 443 can close the pump suction and exhaust pipeline 441 when the processing space S2 is under high pressure, and open the pump suction and exhaust pipeline 441 when the processing space S2 is under low pressure.

[0234] The aforementioned slow-release valve 444 is arranged in parallel with the pump suction on / off valve 443 on the pump suction exhaust pipeline 441. It can open the corresponding valve to adjust the pump suction volume during the initial pump suction process or when the pump suction volume needs to be controlled during the pump suction process.

[0235] In addition, the following description will be based on the accompanying drawings, detailing several embodiments of the manifold section 1000 for assembling the high-pressure control section 430 and the pump suction control section 440 according to the present invention.

[0236] Based on the high-voltage control unit 430 of the present invention, as a first embodiment, such as Figure 6 As shown in the description, the high-pressure exhaust line 431 is configured to connect the high-pressure exhaust line 431 to the exhaust port of the processing space located in the manifold 1000 and the external exhaust line 1100. More specifically, one end of the high-pressure exhaust line 431 branches off and connects to the front end of the pump control valve 442 in the pump exhaust line 441 described later, and the other end can be connected to the external exhaust device 1100.

[0237] That is, for the high-pressure control unit 430, when the pump suction and exhaust pipeline 441 is connected to the exhaust port of the processing space and the external vacuum pump 1200, the high-pressure exhaust pipeline 431 can be connected to the front end of the pump suction control valve 442 in the pump suction and exhaust pipeline 441 and the external exhaust device 1100.

[0238] As a result, when a single processing space exhaust port is provided on the manifold 1000, the high-pressure control unit 430 can be branched off from the pump suction exhaust line 441 connected to the processing space exhaust port. Therefore, the high-pressure exhaust line 431 can be connected to and branched off from the pump suction control valve 442 at its front end.

[0239] In this case, the pump suction exhaust line 441 of the pump suction control unit 440 can be combined with the exhaust port of a single processing space provided in the manifold 1000, and the high pressure exhaust line 431 can be branched from the front end of the pump suction on / off valve 443 in the pump suction exhaust line 441.

[0240] Furthermore, under the above circumstances, the processed gas discharged through the exhaust port of a single processing space using the pump suction on / off valve 443 and the high pressure on / off valve 433 can be discharged by appropriately opening and closing the valve based on pressure, i.e., atmospheric pressure, according to high pressure and low pressure.

[0241] The aforementioned external exhaust device 1100 may include: a hazardous substance removal unit 1110 for removing hazardous substances present in the emitted exhaust gas; and an external exhaust pipeline 1120 for connecting the hazardous substance removal unit 1110 and the external vacuum pump 1200.

[0242] At this time, one end of the high-pressure exhaust line 431 is connected to the front end of the pump control valve 442 in the processing space of the pump suction exhaust line 441, and the other end is connected to the external exhaust line 1120. The high-pressure control unit 430 can be connected to the external exhaust device 1100.

[0243] In another example, one end of the high-pressure exhaust line 431 is connected to the front end of the pump control valve 442 in the processing space of the pump exhaust line 441, and the other end is directly connected to the hazardous substance removal unit 1110, so that the high-pressure control unit 430 can be connected to the external exhaust device 1100.

[0244] In addition, such as Figure 8 In the third embodiment shown, the pump suction control unit 440 is connected to the exhaust port of the processing space and the external vacuum pump 1200 through the pump suction exhaust line 441. The high pressure control unit 430 connects the front end and the rear end of the pump suction control valve 442 in the pump suction exhaust line 441 through the high pressure exhaust line 431, so that the flow rate of the process gas flowing from the processing space S2 to the external vacuum pump 1200 can be controlled by the high pressure control valve 432.

[0245] At this time, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to the same external vacuum pump 1200. As another example, the pump suction control unit 440 and the high pressure control unit 430 can of course be respectively connected to an independent external vacuum pump 1200.

[0246] In another example of the third embodiment, when the pump suction control unit 440 connects the exhaust port of the processing space and the external vacuum pump 1200 through the pump suction exhaust line 441, the high pressure control unit 430 connects the front end of the pump suction control valve 442 in the pump suction exhaust line 441 directly to the external vacuum pump 1200 through the high pressure exhaust line 431. This allows the flow rate of the process gas flowing from the processing space S2 to the external vacuum pump 1200 to be adjusted.

[0247] In this case, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to the same external vacuum pump 1200, while as another example, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to an independent external vacuum pump 1200.

[0248] Furthermore, as another example, the high-pressure control unit 430 is configured such that when the high-pressure exhaust line 431 connects the exhaust port of the processing space to the external vacuum pump 1200, the pump suction control unit 440 connects the front end of the high-pressure control valve 432 in the high-pressure exhaust line 431 to the external vacuum pump 1200. Thus, the flow rate of the process gas flowing from the processing space S2 to the external vacuum pump 1200 can be controlled by the pump control valve 442.

[0249] In this case, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to the same external vacuum pump 1200, while as another example, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to an independent external vacuum pump 1200.

[0250] In addition, as a second embodiment, such as Figure 7 As shown, the following can be provided: a high-pressure exhaust port 1020 connected to the manifold section 1000 and the high-pressure control section 430; and a pump suction and exhaust port 1030 connected to the pump suction control section 440.

[0251] In this case, one end of the high-pressure exhaust pipeline 431 is connected to the high-pressure exhaust port 1020, and the other end is connected to the external exhaust device 1100, and the high-pressure process gas can be discharged through the high-pressure exhaust pipeline 431.

[0252] Furthermore, in a state independent of the high-pressure control unit 430, one end of the pump suction and exhaust line 441 in the pump suction control unit 440 is connected to the pump suction and exhaust port 1030, and the other end is connected to the external vacuum pump 1200. The process gas under low pressure can be discharged through the low-pressure exhaust line 421.

[0253] More specifically, the high-pressure control unit 430 is configured such that, with the pump suction and exhaust line 441 connecting the pump suction and exhaust port 1030 to the external vacuum pump 1200, the high-pressure exhaust line 431 connects the high-pressure exhaust port 1020 to the external exhaust device 1100. This allows control over the flow rate of the process gas from the processing space S2 to the external exhaust device 1100, thereby adjusting and controlling the pressure of the processing space S2 to be higher than atmospheric pressure.

[0254] At this time, one end of the high-pressure exhaust line 431 is connected to the high-pressure exhaust port 1020, and the other end is connected to the external exhaust port 1120, so that the high-pressure control unit 430 can be connected to the external exhaust port 1100.

[0255] Furthermore, in another example, one end of the aforementioned high-pressure exhaust line 431 is connected to the high-pressure exhaust port 1020, while the other end is connected to the hazardous substance removal unit 1110, so that the high-pressure control unit 430 can be connected to the external exhaust device 1100.

[0256] In another example, with the pump suction control unit 440 connecting the pump suction exhaust port 1030 and the external vacuum pump 1200 via the pump suction exhaust line 441, the high pressure control unit 430 connects the high pressure exhaust line 431 to the high pressure exhaust port 1020 and the rear end of the pump suction control valve 442 in the aforementioned pump suction exhaust line 441, and controls the amount of process gas flowing from the processing space S2 to the external vacuum pump 1200 via the high pressure control valve 432.

[0257] At this time, the pump suction control unit 440 and the high pressure control unit 430 can be connected to the same external vacuum pump 1200 respectively. As another example, the pump suction control unit 440 and the high pressure control unit 430 can of course be connected to independent external vacuum pumps 1200 respectively.

[0258] Furthermore, as another example, when the pump suction control unit 440 is connected to the exhaust port of the processing space and the external vacuum pump 1200 through the pump suction exhaust line 441, the high pressure control unit 430 connects the high pressure exhaust line 431 directly to the high pressure exhaust port 1020 and the external vacuum pump 1200. In this way, the flow rate of the process gas flowing from the processing space S2 to the external vacuum pump 1200 can be adjusted by the high pressure control valve 432.

[0259] At this time, the pump suction control unit 440 and the high pressure control unit 430 can be connected to the same external vacuum pump 1200 respectively. As another example, the pump suction control unit 440 and the high pressure control unit 430 can of course be connected to independent external vacuum pumps 1200 respectively.

[0260] Furthermore, as another example, when the pump suction control unit 440 is connected to the exhaust port of the processing space and the external vacuum pump 1200 through the pump suction exhaust line 441, the high pressure control unit 430 connects the high pressure exhaust line 431 directly to the high pressure exhaust port 1020 and the external vacuum pump 1200. In this way, the flow rate of the process gas flowing from the processing space S2 to the external vacuum pump 1200 can be adjusted by the high pressure control valve 432.

[0261] In the above case, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to the same external vacuum pump 1200. As another example, the pump suction control unit 440 and the high pressure control unit 430 can be respectively connected to an independent external vacuum pump 1200.

[0262] The aforementioned second pressure regulating unit 500 is connected to the non-processing space S1 and can have various structural forms as a structure that regulates the pressure of the non-processing space S1 independently of the processing space S2.

[0263] In particular, the second pressure regulating unit 500 can independently adjust the pressure of the non-processing space S1 formed by separating it from the processing space S2, independent of the processing space S2.

[0264] For example, the second pressure regulating unit 500 is connected to the non-processing space S1 and may include: a second gas supply unit 510 that supplies filling gas to the non-processing space S1; and a second exhaust unit 520 that exhausts gas from the non-processing space S1.

[0265] The second air supply unit 510 is connected to the air supply port 170 and can supply filling gas to the non-processing space S1, thereby adjusting the pressure of the non-processing space S1.

[0266] The second exhaust section 520 is connected to the exhaust port 180 and serves as a structure for venting the non-processing space S1, thereby regulating the pressure of the non-processing space S1.

[0267] Furthermore, the second gas supply unit 510 and the second exhaust unit 520 described above can be any structure as long as they implement the structure for supplying and exhausting filling gas disclosed in the prior art.

[0268] For example, the second exhaust section 520 described above may include: a non-processing space exhaust line 521 with one end connected to the exhaust port 180 and the other end connected to the external vacuum pump 1200; and a non-processing space high-pressure control valve 522, which is disposed in the non-processing space exhaust line 521 and used to control the pressure of the non-processing space S1.

[0269] In addition, the second exhaust section 520 may also include a pressure on / off valve 523, which is located at the front end of the non-processing space high-pressure control valve 522 in the non-processing space exhaust line 521, thereby determining whether the non-processing space exhaust line 521 is open or closed.

[0270] The aforementioned non-processing space exhaust line 521 connects the exhaust port 180 located in the process chamber 100 with the external vacuum pump 1200, thereby forming a flow path for supplying process gas to the processing space S2.

[0271] The aforementioned high-pressure control valve 522 for the non-processing space is installed on the exhaust line 521 for the non-processing space. As a structure for controlling the pressure of the filling gas in a high-pressure state that is higher than the pressure flowing into the non-processing space S1, the exhaust volume can be controlled through the exhaust line 521 for the non-processing space.

[0272] At this time, the pressure of the non-processing space high-pressure control valve 522 can be checked by a pressure instrument (not shown) installed on the non-processing space exhaust line 521, and controlled by a control unit (not shown) that sends control signals.

[0273] The aforementioned pressure on / off valve 523 is installed at the front end of the non-treatment space high pressure control valve 522 in the non-treatment space exhaust line 521, thereby determining and controlling the opening and closing of the non-treatment space exhaust line 521.

[0274] That is, the pressure on / off valve 523 mentioned above can determine whether to vent the non-processing space S1 by controlling the opening and closing of the non-processing space exhaust pipeline 521.

[0275] As a result, the aforementioned second exhaust section 520 can control the pressure of the non-processing space S1 to a pressure state higher than atmospheric pressure through the non-processing space exhaust pipeline 521 and the non-processing space high-pressure control valve 522.

[0276] In addition, such as Figure 2 The second exhaust section 520 shown above controls the non-processing space S1 to a low-pressure and vacuum state below atmospheric pressure, which is of course possible.

[0277] Therefore, such as Figure 9The second exhaust section 520 shown above may include: a non-processing space pump exhaust line 524, which connects the exhaust port 180 and the external vacuum pump 1200; and a non-processing space pump suction control valve 525, which is disposed on the non-processing space pump suction exhaust line 524 to control the amount of filling gas flowing from the non-processing space S1 to the external vacuum pump 1200, thereby controlling it to be in a low-pressure state below atmospheric pressure.

[0278] Additionally, the pressure on / off valve 523 installed on the non-processing space pump suction / exhaust line 524 can, of course, be set up as described above.

[0279] Furthermore, the installation structure of the above-mentioned non-treatment space pump suction and exhaust pipeline 524 and non-treatment space pump suction control valve 525 can be the same as the setting structure of the non-treatment space exhaust pipeline 521 and non-treatment space high pressure control valve 522.

[0280] Furthermore, the second pressure regulating unit 500 and the first pressure regulating unit 400 used to regulate the pressure of the non-processing space S1 can be connected by sharing the same external exhaust device 1100. As another example, they can also be connected to an independent external exhaust device 1100 for exhaust. Such a configuration is certainly possible.

[0281] Furthermore, the second pressure regulating unit 500 and the first pressure regulating unit 400 can be connected by sharing the same external vacuum pump 1200, and as another example, they can be connected to a separate external vacuum pump 1200 for pumping. Such a configuration is of course also possible.

[0282] The aforementioned second pressure regulating unit 500 changes the pressure of the processing space S2, where the substrate 1 is provided, from a first pressure higher than normal pressure to a second pressure. During this process, the pressure of the non-processing space S1 can be kept constant.

[0283] At this time, the second pressure regulating unit 500 can maintain the pressure of the non-processing space S1 in a vacuum state during substrate processing, and can keep its pressure lower than or equal to the pressure of the processing space S2 during this process.

[0284] That is, during the substrate processing, the second pressure regulating unit 500 can maintain the pressure of the non-processing space S1 at a constant second pressure, i.e., 0.01 Torr, so that its pressure is kept lower than or equal to the pressure of the processing space S2, thereby preventing impurities and other foreign matter from the non-processing space S1 from flowing into the processing space S2.

[0285] In addition, as another example, the second pressure regulating unit 500 described above can change the pressure of the non-processing space S1, and in the process, it can also make its pressure value lower than the pressure value of the processing space S2.

[0286] In addition, the second pressure regulating unit 500 can control and regulate the pressure of the non-processing space S1 by venting during the substrate processing, without the need to supply filling gas to the non-processing space S1.

[0287] That is, the second pressure regulating unit 500 does not need to supply filling gas from the second gas supply unit 510, and can regulate the pressure of the non-processing space S1 using only the second exhaust unit 520.

[0288] In addition, as another example, the second pressure regulating unit 500 supplies filling gas to the non-processing space S1, and while the second exhaust unit 520 exhausts gas, it also regulates the pressure of the non-processing space S1.

[0289] In addition, unlike the above, the second pressure regulating unit 500 may be an exhaust port 180 formed on one side of the process cavity 100, i.e., the cavity body 110, and an air supply port 170 formed on the other side to transport the filling gas supplied from the outside; and an exhaust port 180 for venting the non-processing space S1.

[0290] The aforementioned control unit may be a control structure that regulates the pressure of the processing space S2 and the non-processing space S1 through the first pressure regulating unit 400 and the second pressure regulating unit 500.

[0291] In particular, the aforementioned control unit is associated with the process steps of substrate processing, and the first pressure regulating unit 400 and the second pressure regulating unit 500 in the non-processing space S1 and the processing space S2 in each step are controlled.

[0292] For example, when the internal lead section 300 is raised and the processing space S2 and the non-processing space S1 are connected to each other, the control unit can supply purge gas through the first air supply section 410 and exhaust gas through the second exhaust section 520.

[0293] More specifically, in order to perform a cleaning operation on the processing space S2 of the substrate processing, the control unit can supply purging gas through the first air supply unit 410 when the internal lead part 300 is raised and the processing space S2 and the non-processing space S1 are connected to each other, thereby performing a cleaning or purging operation on the area around the substrate support part 200 of the substrate processing.

[0294] Furthermore, the purge gas is discharged through the second exhaust section 520 located on the side of the process chamber 100, thereby guiding the purge gas supplied by the first air supply section 410 to rise to the side and then guiding the internal suspended matter to be discharged to the non-processing space S1 and the outside.

[0295] Furthermore, before the internal lead section 300 rises, the control unit can use at least one of the first pressure adjustment unit 400 and the second pressure adjustment unit 500 to adjust the pressure of the processing space S2 and the non-processing space S1.

[0296] More specifically, when substrate processing is performed with the internal lead section 300 descending to form a closed processing space S2, in order to smoothly remove the processed substrate 1, before the internal lead section 300 rises, to prevent the position of the substrate 1 from changing or being damaged due to the pressure difference between the non-processing space S1 and the processing space S2, the control unit can use at least one of the first pressure adjustment unit 400 and the second pressure adjustment unit 500 to control the pressure between the non-processing space S1 and the processing space S2 to remain constant.

[0297] In other words, when the control unit maintains a constant pressure difference between the non-processing space S1 and the processing space S2, and the internal lead section 300 rises to connect the non-processing space S1 and the processing space S2, in order to prevent unidirectional airflow from being generated due to the pressure difference and thus affecting the substrate 1, at least one of the first pressure adjustment unit 400 and the second pressure adjustment unit 500 can be used to adjust the pressure difference between the two to keep it constant.

[0298] In addition, the substrate processing apparatus of the present invention may be further provided with a sealing part 900, which includes: a first sealing member 910 disposed on the contact surface between the internal lead part 300 and the process cavity 100, for preventing process gas from leaking from the processing space S2 to the non-processing space S1; and a second sealing member 920 for preventing process gas from leaking through the gas supply flow path 190.

[0299] The sealing portion 900 described above is a structure provided on at least one of the internal lead portion 300 or the bottom surface 120 of the process cavity 100, and can be provided at a position corresponding to the bottom surface 120 of the process cavity 100 and the internal lead portion 300 being in close contact.

[0300] When the edge of the internal lead portion 300 contacts the bottom surface 120 and forms a sealing processing space S2, the sealing portion 900 is provided along the edge of the bottom surface of the internal lead portion 300 so that it can contact the bottom surface 120.

[0301] Therefore, the sealing part 900 can guide the smooth formation of the sealed processing space S2 and prevent process gases and the like from leaking into the external space such as the internal space.

[0302] For example, the sealing portion 900 may include a first sealing member 910 disposed along the bottom edge of the inner lead portion 300, and a second sealing member 920 disposed on the first sealing member 910 and disposed at a certain interval.

[0303] At this time, the first sealing member 910 and the second sealing member 920, as O-ring structures disclosed in the prior art, are provided along the bottom edge of the inner lead portion 300 and are separated at a certain interval.

[0304] That is, the first sealing component 910 and the second sealing component 920 seal the processing space S2 in a double-sealing manner, which can prevent process gases and the like from leaking from the processing space S2 to the outside.

[0305] Furthermore, when the internal lead 310 descends and the gas inlet flow path 190 and the gas supply flow path 320 are connected, in order to prevent process gas from leaking from the contact surface, the aforementioned second sealing component 920 may be configured to wrap around the gas inlet flow path 190 or wrap around the gas supply flow path 320 from the bottom of the internal lead 310.

[0306] In addition, the sealing part 900 can be inserted into the insertion groove provided on the bottom surface 120, and can be in close contact with or separated from the internal lead part 300 as the internal lead part 300 moves up and down.

[0307] As another example, the sealing part 900 can be located at the bottom of the internal lead part 300, and this arrangement is of course also possible.

[0308] The aforementioned internal lead drive unit 600 is provided through the upper surface of the process cavity 100 and serves as a structure for driving the internal lead unit 300 to move up and down, and can have various structural forms.

[0309] For example, the aforementioned internal lead drive unit 600 may include: a plurality of drive rods 610 having one end extending through the upper surface of the process cavity 100 and being coupled to the internal lead unit 300, and at least one drive source 620 connected to the other end of the plurality of drive rods 610 and driving the drive rods 610 to move up and down.

[0310] Furthermore, the aforementioned internal lead drive unit 600 may additionally include: a fixed support unit 640 installed on the upper surface of the process cavity 100, i.e., on the top lead 140, and fixedly supporting the end of the drive rod 610; and a bellows 630 disposed between the upper surface of the process cavity 100 and the internal lead unit 300 and enclosing the drive rod 610.

[0311] The aforementioned drive rod 610 can be a structure with the following functions: one end of it penetrates the upper surface of the process cavity 100 and is connected to the internal lead portion 300, while the other end is connected to the drive source 620 outside the process cavity 100. It moves upward using the drive source 620, thereby driving the internal lead portion 300 to move up and down.

[0312] At this time, multiple drive rods 610 can be connected to the upper surface of the internal lead section 300 at certain intervals, more specifically, the number of which can be two or four, to guide the internal lead section 300 to move up and down while maintaining a horizontal state.

[0313] The aforementioned drive source 620, which is a structure that is combined with the fixed support 640 and drives the drive rod 610 to move up and down, can have various structural forms.

[0314] For the aforementioned drive source 620, any conventional drive method disclosed in the prior art can be applied. For example, various drive methods such as cylinder drive, electronic drive, helical motor drive, and cam drive are all feasible.

[0315] The aforementioned bellows 630 is installed between the upper surface of the process chamber 100 and the internal lead wire portion 300, and wraps around the aforementioned drive rod 610, in order to prevent gas or the like in the non-processing space S1 from leaking out through the upper surface of the process chamber 100.

[0316] At this time, when setting up the corrugated pipe 630, the vertical movement of the internal lead section 300 can be considered for corresponding installation.

[0317] In addition, as mentioned above, when the substrate support 200 is installed in the mounting groove 130, a certain space is formed between the substrate support 200, more specifically, the substrate support plate 210 and the mounting groove 130, which can increase the volume of the processing space S2 and become a factor in changing the volume.

[0318] To improve the above problems, when the mounting groove 130 is placed in contact with the substrate support 200, the heat generated by the heater in the substrate support 200 is absorbed by the lower surface of the process cavity 100 through the mounting groove 130, resulting in a certain heat loss. This makes it difficult to further set and maintain the process temperature of the processing space S2, resulting in low efficiency.

[0319] To improve these problems, the filling member 700 in this invention, which is disposed between the substrate support 200 and the lower surface of the process cavity 100, can have various structures.

[0320] For example, the filling member 700 described above can be installed in the mounting groove 130, and in the state of being installed in the mounting groove 130, the substrate support plate 210 can minimize the volume of the remaining space located on the upper side and between the mounting groove 130 and the substrate support plate 210, thereby further reducing the volume of the processing space S2.

[0321] Therefore, the filling member 700 can be formed into a shape corresponding to the space between the mounting groove 130 and the substrate support 200, thereby minimizing the volume of the processing space S2.

[0322] More specifically, the shape of the filling member 700 corresponds to the space formed between the mounting groove 130 and the planar circular substrate support plate 210, wherein the mounting groove forms a circular stepped structure on the plane and protrudes from the bottom surface 120 to form a certain height.

[0323] Therefore, the filling member 700 may have a circular flat plate shape structure disposed between the substrate support plate 210 and the mounting groove 130, or in the circular flat plate shape structure, a stepped structure is formed upward at the edge portion, thereby occupying the space between the side of the substrate support plate 210 and the mounting groove 130.

[0324] That is, the filling member 700 is disposed adjacent to at least one of the side surface and bottom surface of the substrate support plate 210, and is disposed separately from the substrate support plate 210, forming a structure that wraps around the bottom surface and side surface of the substrate support plate 210.

[0325] At this time, the substrate support portion 200 can be separated from the filling member 700 in order to prevent heat loss through the filling member 700. More specifically, the spacing can be set with a fine interval so that they do not contact each other.

[0326] Therefore, a certain interval can be maintained between the substrate support 200 and the filling member 700, and this interval serves as an exhaust flow path, thereby allowing exhaust to be performed on the processing space S2.

[0327] More specifically, since there is a gap between the substrate support 200 and the filling member 700, an exhaust flow path can be formed. At this time, the exhaust flow path is connected to the bottom of the mounting groove 130 through which the substrate support shaft 220 passes, thereby allowing the process gas in the processing space S2 to be discharged to the outside.

[0328] On the other hand, the filling component 700 may be made of at least one of the following materials: quartz, ceramic, and SUS.

[0329] Furthermore, in order to minimize the volume of the processing space S2, the filling component 700 not only occupies the space between the mounting groove 130 and the substrate support 200, but also minimizes the heat loss transferred to the substrate 1 through the substrate support 200 by heat insulation, and further reflects the lost heat transferred to the processing space S2 by heat reflection.

[0330] That is, the filling component 700 can not only minimize the volume of the processing space S2, but also prevent the heat loss through the substrate support 200 to the bottom surface 120 side of the process cavity 100, thus further improving the heat energy utilization rate through heat reflection.

[0331] In addition, a reflective portion disposed on the surface may be included to enhance the effect of reflecting the heat emitted through the substrate support portion 200 to the processing space S2.

[0332] That is, the filling component 700 may include: a heat insulation part for blocking heat emitted from the processing space S2 to the outside; and a heat insulation part disposed on the surface of the heat insulation part and reflecting heat.

[0333] At this time, the aforementioned reflective part can form a reflective layer, which is applied to the surface of the heat insulation part, or formed by bonding or coating, and can reflect the heat lost from the processing space S2 through the process cavity 100 and then transfer it back to the processing space S2.

[0334] Furthermore, the filling component 700 may also have: a plurality of first through-holes having a size corresponding to the center so as to be mounted on the substrate support shaft 220; and a plurality of second through-holes through which a plurality of substrate support pins 810 pass and can move in the vertical direction.

[0335] The aforementioned substrate support pin 800 can have various structures, serving as a structure for introducing the substrate 1 into the process cavity 100 and removing it and mounting it on the substrate support member 200.

[0336] For example, the substrate support pin portion 800 may include: a plurality of substrate support pins 810 that pass through the filling member 700 and the substrate support portion 200 and can move up and down to support the substrate 1; an annular substrate support ring 820 on which the plurality of substrate support pins 810 are mounted; and a substrate support pin drive portion 830 that drives the plurality of substrate support pins 810 in the up and down direction.

[0337] The aforementioned multiple substrate support pins 810 are disposed on the substrate support ring 820, and support the substrate 1 by passing through the filling member 700 and the substrate support part 200 and moving up and down. The related structure can have a variety of designs.

[0338] At this time, at least three substrate support pins 810 can be provided and spaced apart from each other on the substrate support ring 820. When rising, they protrude from the substrate support portion 200 to support the introduced substrate 1 or support the removed substrate 1; when falling, they are located inside the substrate support portion 200, so that the substrate 1 can be placed in the substrate support portion 200.

[0339] The aforementioned substrate support ring 820 is a ring structure and is provided with multiple substrate support pins 810. When it moves up and down, the multiple substrate support pins 810 also move up and down at the same time.

[0340] In particular, the aforementioned substrate support ring 820 is disposed on the lower surface of the process cavity 100, that is, in the support pin mounting groove 160 formed in the mounting groove 130, and can move up and down under the action of the substrate support pin drive part 830.

[0341] The aforementioned substrate support pin drive unit 830, which is provided outside the process cavity 100 and has a substrate support ring 820 that drives the substrate in the vertical direction, can have various structural forms.

[0342] For example, the substrate support pin drive unit 830 may include: a substrate support pin 831, one end of which is connected to the bottom of the substrate support ring 820 and the other end of which is connected to the substrate support pin drive source 833, and moves up and down under the driving force of the substrate support pin drive source 833; and a substrate support pin guide 832, which guides the substrate support pin 831 to move linearly, and the substrate support pin drive source 833 drives the substrate support pin 831.

[0343] Furthermore, the aforementioned substrate support pin portion 800 may additionally include: a substrate support pin balancer 840, which wraps around the substrate support pin rod 831 and is disposed between the bottom of the process cavity 100 and the substrate support pin drive source 833.

[0344] The aforementioned manifold 1000 is disposed on the lower surface of the process chamber 100, communicates with the processing space S2, and serves as a structure that forms at least one exhaust port for the processing space to communicate with the high-pressure control unit 430 and the pump suction control unit 440. It can have various structural forms.

[0345] For example, such as Figure 3 The manifold 1000 shown above may include: a manifold 1010 disposed on the lower surface of the process chamber 100 and connected to the internal processing space S2; and a processing space exhaust port disposed on the manifold 1010 and connected to at least one of the high pressure control unit 430 and the pump suction control unit 440.

[0346] At this time, the manifold 1010 is installed on the lower surface of the process chamber 100 and can be connected to the processing space S2, so that it can act as a medium for the exhaust of the processing space S2, the high pressure control unit 430 and the pump suction control unit 440.

[0347] In addition, the aforementioned manifold 1010 is provided with a lower through hole 1011 through which various wires connected to the heater provided on the substrate support plate 210 are passed through via the aforementioned substrate support shaft 220.

[0348] The exhaust ports of the aforementioned processing space may include: a high-pressure exhaust port 1020, which is provided in the manifold 1010 and connected to the high-pressure control unit 430 as described above; and a pump suction exhaust port 1030 connected to the pump suction control unit 440. As another example, the manifold 1010 is provided with a single port, which can be connected to both the high-pressure exhaust port 1020 and the pump suction exhaust port 1030 when combined with either the high-pressure exhaust port 1020 or the pump suction exhaust port 1030.

[0349] like Figure 6 The external exhaust device 1100 shown above may include: a hazardous substance removal unit 1110, which removes hazardous substances discharged from the processing space S2 and the non-processing space S1; and an external exhaust pipeline 1120, which connects the high pressure control unit 430, the pump control unit 440 and the second exhaust unit 520.

[0350] Furthermore, the aforementioned external exhaust device 1100 may also include an exhaust pipe 1130, which is disposed at the rear end of the hazardous substance removal unit 1110, for discharging the gas from which hazardous substances have been removed to the outside.

[0351] In this case, the external vacuum pump 1200 is located at the front end of the hazardous substance removal unit 1110, at the position where the second exhaust unit 520 and the pumping control unit 440 are connected, and can pump the non-processing space S1 and the processing space S2 respectively.

[0352] At this time, as Figure 6 The high-pressure control unit 430 shown is connected from the rear end of the external vacuum pump 1200 to the external exhaust line 1120 in order to protect the external vacuum pump 1200, thereby allowing the exhaust gas to be transported to the hazardous substance removal unit 1110.

[0353] The above description only illustrates the preferred embodiments that can be implemented in this invention. Therefore, the scope of the core technology of this invention is not limited to the above embodiments, and all technical ideas of this invention involved in the above description, as well as all technical ideas combined with its core technology, should be understood to be included within the scope of this invention.

Claims

1. A substrate processing apparatus characterized by comprising: The substrate processing apparatus includes: a process chamber (100) including a chamber body (110) having an upper portion open, a mounting groove (130) formed at a center side, and a gate (111) for moving a substrate (1) into and out of the chamber body (110), and a top lead (140) coupled to the upper portion of the chamber body (110) and forming an inner space; and a substrate support portion (200) formed in a shape corresponding to the mounting groove (130) of the chamber body (110) and inserted into the mounting groove (130) with the substrate (1) disposed on an upper surface thereof; an inner lead portion (300) movable up and down in the inner space, a portion of which is in close contact with a bottom surface (120) adjacent to the mounting groove (130) when lowered, thereby dividing the inner space into a sealed processing space (S2) in which the substrate support portion (200) is disposed and a remaining space, a non-processing space (S1); and a first pressure adjusting portion (400) communicating with the processing space (S2) and adjusting a pressure of the processing space (S2); a second pressure adjusting portion (500) communicating with the non-processing space (S1) and adjusting a pressure of the non-processing space (S1) independently of the processing space (S2); a control portion controlling pressure adjustment of the processing space (S2) and the non-processing space (S1) by the first pressure adjusting portion (400) and the second pressure adjusting portion (500).

2. The substrate processing apparatus according to claim 1, wherein the control portion controls at least one of the first pressure adjusting portion (400) and the second pressure adjusting portion (500) such that the pressure of the processing space (S2) and the non-processing space (S1) gradually becomes equal before the inner lead portion (300) is raised.

3. The substrate processing apparatus according to claim 1, wherein the control portion adjusts the pressure of the processing space (S2) in which the substrate (1) is mounted by the first pressure adjusting portion (400) to perform substrate processing, and performs pressure adjustment in a range between a first pressure higher than an atmospheric pressure and a second pressure lower than the atmospheric pressure.

4. The substrate processing apparatus according to claim 1, wherein the control portion adjusts the pressure of the non-processing space (S1) by the second pressure adjusting portion (500) to maintain a vacuum state during substrate processing.

5. The substrate processing apparatus according to claim 4, wherein the control portion adjusts the pressure of the non-processing space (S1) by the second pressure adjusting portion (500) to maintain a state lower than the pressure of the processing space (S2) during substrate processing.

6. The substrate processing apparatus according to claim 3, wherein ​ The control unit adjusts the first pressure to the second pressure and then back to the first pressure, and repeats the pressure adjustment in this order to smoothly perform the substrate processing.

7. The substrate processing apparatus according to claim 1, wherein The first pressure adjustment unit (400) includes a first gas supply unit (410) which is disposed adjacent to the edge of the substrate support unit (200) and which is in communication with the processing space (S2) to supply the process gas to the processing space (S2).

8. The substrate processing apparatus according to claim 1, wherein The first pressure adjustment unit (400) includes a first gas supply unit (410) which is in communication with the processing space (S2) to supply the process gas to the processing space (S2). The first gas supply unit (410) includes a gas injection unit (416) which is disposed at the edge of the mounting groove (130) to inject the process gas, and a gas supply flow path (417) which penetrates the lower surface of the process chamber (100) to supply the process gas received from the outside to the gas injection unit (416).

9. The substrate processing apparatus according to claim 1, wherein The inner lead unit (300) includes an inner lead (310) which is vertically movable in the inner space, and a gas supply flow path (320) which is disposed in the inner lead (310) to be in communication with the processing space (S2).

10. The substrate processing apparatus according to claim 9, wherein The first pressure adjustment unit (400) includes a first gas supply unit (410) which is disposed at the lower portion of the inner lead unit (300) to inject the process gas supplied through the gas supply flow path (320) to the processing space (S2).

11. The substrate processing apparatus according to claim 10, wherein The first gas supply unit (410) includes an injection flat plate (412) which is disposed at the lower side of the inner lead unit (300) and which is provided with a plurality of injection holes (411).

12. The substrate processing apparatus according to claim 11, wherein The first gas supply unit (410) further includes an injection flat plate support unit (413) which supports the edge of the injection flat plate (412) and which is coupled to the inner lead unit (300), and a plurality of fastening members (414) which penetrate the injection flat plate support unit (413) and which are coupled to the inner lead unit (300).

13. The substrate processing apparatus according to claim 10, wherein The inner lead (310) is formed with an insertion mounting groove (330) into the bottom surface of which at least a portion of the first gas supply unit (410) is inserted. The first gas supply unit (410) is inserted into the insertion mounting groove (330) and forms the bottom surface of the inner lead (310) and a flat surface.

14. The substrate processing apparatus according to claim 9, wherein The process chamber (100) includes: a gas introduction flow path (190) for supplying a process gas introduced from the outside to a lower surface in contact with the inner lead portion (300); The inner lead portion (300) is lowered to be in close contact with the bottom surface (120), and connects the gas introduction flow path (190) and the gas supply flow path (320) to supply the process gas to the gas supply flow path (320).

15. The substrate processing apparatus according to claim 1, wherein The first pressure adjusting portion (400) includes: a high-pressure control portion (430) for controlling the pressure of the processing space (S2) to be higher than the atmospheric pressure by performing an exhaust operation on the processing space (S2); and a pumping control portion (440) for controlling the pressure of the processing space (S2) to be lower than the atmospheric pressure by performing a pumping operation on the processing space (S2).

16. The substrate processing apparatus according to claim 15, wherein The high-pressure control portion (430) includes: a high-pressure exhaust line (431) for connecting the processing space (S2) and an external exhaust device (1100) to each other; and a high-pressure control valve (432) provided on the high-pressure exhaust line (431) to control the amount of the process gas flowing from the processing space (S2) to the external exhaust device (1100), thereby controlling the processing space (S2) to be kept in a state where the pressure is higher than the atmospheric pressure; The pumping control portion (440) includes: a pumping exhaust line (441) for connecting the processing space (S2) and an external vacuum pump (1200) to each other; and a pumping control valve (442) provided on the pumping exhaust line (441) to control the amount of the process gas flowing from the processing space (S2) to the external vacuum pump (1200), thereby controlling the processing space (S2) to be kept in a state where the pressure is lower than the atmospheric pressure.

17. A substrate processing apparatus, characterized by comprising: including: a process chamber (100) including: a chamber body (110) having an upper portion opened, a mounting groove (130) formed on a center side, and a gate (111) for moving a substrate (1) into and out of the chamber body (110); and a top lead (140) combined with the upper portion of the chamber body (110) and forming an inner space; and a substrate support portion (200) interposed in the mounting groove (130) of the chamber body (110) and having the substrate (1) disposed thereon; and an inner lead portion (300) movable up and down in the inner space, and having a portion thereof in close contact with a bottom surface (120) adjacent to the mounting groove (130) when lowered, thereby dividing the inner space into a sealed processing space (S2) where the substrate support portion (200) is located and a remaining space, a non-processing space (S1); a first pressure adjusting portion (400) connected to the processing space (S2) and adjusting the pressure of the processing space (S2); and a second pressure adjusting portion (500) connected to the non-processing space (S1) and adjusting the pressure of the non-processing space (S1). A second pressure regulating portion (500) is in communication with the non-processing space (S1) and is capable of regulating the pressure of the non-processing space (S1) independently of the processing space (S2); A control portion controls the pressure regulation of the processing space (S2) and the non-processing space (S1) by the first pressure regulating portion (400) and the second pressure regulating portion (500), The first pressure regulating portion (400) includes a first gas supply portion (410) for supplying process gas to the processing space (S2) and a first exhaust portion (420) for exhausting the processing space (S2); The second pressure regulating portion (500) includes a second exhaust portion (520) connected to an exhaust hole (180) provided on one side of the process chamber (100) and capable of exhausting the non-processing space (S1), and a second gas supply portion (510) connected to a gas supply hole (170) provided on the other side of the process chamber (100) and in communication with the non-processing space (S1) for filling the non-processing space (S1) with gas.

18. The substrate processing apparatus according to claim 17, wherein The control portion supplies purge gas through the first gas supply portion (410) and performs exhaust through the second exhaust portion after the inner lead portion (300) is raised to a state in which the processing space (S2) and the non-processing space (S1) are in communication.

19. The substrate processing apparatus according to claim 17, wherein The second exhaust portion (520) includes a non-processing space exhaust line (521) for connecting the exhaust hole (180) and an external exhaust device (1100) in communication with each other, and a non-processing space high pressure control valve (522) provided on the non-processing space exhaust line (521) for controlling the amount of filling gas flowing from the non-processing space (S1) to the external exhaust device (1100) and thereby controlling the pressure of the non-processing space (S1) to be higher than the atmospheric pressure.

20. The substrate processing apparatus according to claim 17, wherein The second exhaust portion (520) includes a non-processing space pumping exhaust line (524) for connecting the exhaust hole (180) and an external vacuum pump (1200) in communication with each other, and a non-processing space pumping control valve (525) provided on the non-processing space pumping exhaust line (524) for controlling the amount of filling gas flowing from the non-processing space (S1) to the external vacuum pump (1200) and thereby controlling the pressure of the non-processing space (S1) to be lower than the atmospheric pressure.

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