Photosensitive device

Abstract

This invention discloses a photosensitive device, comprising a substrate, a plurality of first working photosensitive elements, a plurality of second working photosensitive elements, a plurality of third working photosensitive elements, a plurality of first reference photosensitive elements, a plurality of second reference photosensitive elements, a plurality of third reference photosensitive elements, a first processing element, and a second processing element. The substrate has a first working area, a second working area, a third working area, a first reference area, a second reference area, and a third reference area. The plurality of first working photosensitive elements, the plurality of second working photosensitive elements, and the plurality of third working photosensitive elements are respectively disposed in the first working area, the second working area, and the third working area. The plurality of first reference photosensitive elements, the plurality of second reference photosensitive elements, and the plurality of third reference photosensitive elements are respectively disposed in the first reference area, the second reference area, and the third reference area.

Description

Technical Field

[0001] This invention relates to a photosensitive device. Background Technology

[0002] In existing technologies, fingerprint sensing devices use sensing elements to detect the image of a fingerprint based on sensing light, and then perform identification based on the fingerprint image. However, in these devices, after prolonged use, the sensing element, due to long-term exposure to sensing light, experiences a decrease in the grayscale level of the detected fingerprint image. This insufficient grayscale level can lead to identification errors when recognizing the fingerprint image. Summary of the Invention

[0003] This invention provides a photosensitive device with excellent performance.

[0004] The present invention provides another photosensitive device with excellent performance.

[0005] A photosensitive device according to an embodiment of the present invention includes a substrate, a plurality of first working photosensitive elements, a plurality of second working photosensitive elements, a plurality of third working photosensitive elements, a plurality of first reference photosensitive elements, a plurality of second reference photosensitive elements, a plurality of third reference photosensitive elements, a first processing element, a second processing element, and a third processing element. The substrate has a first working area, a second working area, a third working area, a first reference area, a second reference area, and a third reference area, wherein the first working area, the second working area, and the third working area are arranged sequentially in a first direction, and the first reference area, the second reference area, and the third reference area are respectively disposed corresponding to the first working area, the second working area, and the third working area. The plurality of first working photosensitive elements, the plurality of second working photosensitive elements, and the plurality of third working photosensitive elements are respectively disposed in the first working area, the second working area, and the third working area. Each of the plurality of first working photosensitive elements, the plurality of second working photosensitive elements, and the plurality of third working photosensitive elements includes a photosensitive pattern and a first light-shielding structure disposed on the photosensitive pattern. Each of a plurality of first, second, and third working photosensitive elements has a first light-shielding structure having a light-transmitting opening overlapping a photosensitive pattern. A plurality of first, second, and third reference photosensitive elements are respectively disposed in a first reference area, a second reference area, and a third reference area. Each of the plurality of first, second, and third reference photosensitive elements includes a photosensitive pattern and a first light-shielding structure disposed on the photosensitive pattern. The first light-shielding structure of each of the plurality of first, second, and third reference photosensitive elements shields the photosensitive pattern. The plurality of first working photosensitive elements are electrically connected to a first processing element, the plurality of second working photosensitive elements are electrically connected to a second processing element, and the plurality of third working photosensitive elements are electrically connected to a third processing element; furthermore, each of the plurality of first, second, and third reference photosensitive elements is electrically connected to the first, second, and third processing elements.

[0006] Another embodiment of the photosensitive device of the present invention includes a substrate, a plurality of first working photosensitive elements, a plurality of second working photosensitive elements, a plurality of third working photosensitive elements, a plurality of first reference photosensitive elements, a plurality of second reference photosensitive elements, a plurality of third reference photosensitive elements, a first processing element, a second processing element, at least one first wire, at least one first connecting line, at least one second wire, at least one second connecting line, at least one third wire, and at least one third connecting line. The substrate has a first working area, a second working area, a third working area, a first reference area, a second reference area, and a third reference area, wherein the first working area, the second working area, and the third working area are arranged sequentially in a first direction, and the first reference area, the second reference area, and the third reference area are respectively disposed corresponding to the first working area, the second working area, and the third working area. The second reference area includes a first sub-area, and the first working area is located between the first sub-area and the second working area of ​​the second reference area. A plurality of first, second, and third working photosensitive elements are respectively disposed in a first working area, a second working area, and a third working area. Each of the plurality of first, second, and third working photosensitive elements includes a photosensitive pattern and a first light-blocking structure disposed on the photosensitive pattern. The first light-blocking structure of each of the plurality of first, second, and third working photosensitive elements has a light-transmitting opening overlapping the photosensitive pattern. A plurality of first, second, and third reference photosensitive elements are respectively disposed in a first, second, and third reference area. Each of the plurality of first, second, and third reference photosensitive elements includes a photosensitive pattern and a first light-blocking structure disposed on the photosensitive pattern. The first light-blocking structure of each of the plurality of first, second, and third reference photosensitive elements shields the photosensitive pattern, and a first portion of the plurality of second reference photosensitive elements is disposed in a first sub-area of ​​the second reference area. A plurality of first functional photosensitive elements are electrically connected to a first processing element, a plurality of third functional photosensitive elements are electrically connected to a second processing element, a first portion of a plurality of second functional photosensitive elements is electrically connected to the first processing element, and a second portion of a plurality of second functional photosensitive elements is electrically connected to the second processing element. At least one first wire electrically connects the plurality of first functional photosensitive elements and the first processing element. At least one first connecting line electrically connects at least a portion of a plurality of first reference photosensitive elements and the first processing element. A first portion of at least one second wire electrically connects the first portion of a plurality of second functional photosensitive elements and the first processing element. A first portion of at least one second connecting line electrically connects the first portion of a plurality of second reference photosensitive elements and the first processing element. At least one third wire electrically connects the plurality of third functional photosensitive elements and the second processing element. At least one third connecting line electrically connects at least a portion of a plurality of third reference photosensitive elements and the second processing element. The first portion of the at least one second connecting line has at least one connection terminal connected to the first processing element.Multiple first wires have multiple connection terminals connected to a first processing element. A first portion of multiple second wires has at least one connection terminal connected to the first processing element. At least one connection terminal of the first portion of at least one second connection wire is disposed between the multiple connection terminals of the multiple first wires and the at least one connection terminal of the first portion of the multiple second wires. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention;

[0008] Figure 2A This is a cross-sectional schematic diagram of a photosensitive device according to an embodiment of the present invention;

[0009] Figure 2B This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0010] Figure 3 This is a cross-sectional schematic diagram of a photosensitive device according to an embodiment of the present invention;

[0011] Figure 4 This is a graph showing the relationship between the illumination intensity of the light source and the output grayscale of the photosensitive element.

[0012] Figure 5 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0013] Figure 6 This is a top view schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0014] Figure 7 for Figure 6 A schematic diagram of the control terminal of the thin-film transistor of the reference photosensitive element, the semiconductor pattern, and the second light-shielding structure of the reference photosensitive element;

[0015] Figure 8 for Figure 6 A schematic diagram of the first electrode, photosensitive pattern, second electrode, and contact window of the photosensitive stack of the reference photosensitive element;

[0016] Figure 9 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0017] Figure 10 This is a top view schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0018] Figure 11 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0019] Figure 12This is a top view of the first electrode, photosensitive pattern, second electrode, contact window and trench of the passivation layer of the photosensitive stack of a reference photosensitive element according to another embodiment of the present invention.

[0020] Figure 13 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0021] Figure 14 This is a top view of the first electrode, photosensitive pattern, second electrode, contact window, and trench of the passivation layer of a photosensitive stack of a reference photosensitive element according to another embodiment of the present invention.

[0022] Figure 15 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention;

[0023] Figure 16 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention;

[0024] Figure 17 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0025] Figure 18 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0026] Figure 19 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0027] Figure 20 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0028] Figure 21 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention;

[0029] Figure 22 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention.

[0030] Symbol Explanation

[0031] 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I: Photosensitive device; 110: Substrate

[0032] 110a: First edge

[0033] 110b: Second edge

[0034] 112: Work Area

[0035] 112A: First Working Area

[0036] 112B: Second Work Area

[0037] 112C: Third Working Area

[0038] 114: Reference Area

[0039] 114A: First Reference Zone

[0040] 114B: Second Reference Area

[0041] 114B-1: First Sub-region

[0042] 114B-2: Second Subregion

[0043] 114B-3: Third Subregion

[0044] 114B-4: Fourth Subregion

[0045] 114C: Third Reference Zone

[0046] 120: Base light-blocking pattern

[0047] 122, 252: Opening

[0048] 122e, 140e: Edge

[0049] 130: Buffer layer

[0050] 140: First conductive pattern

[0051] 150, 200, 220, 230, 240: Insulation layer

[0052] 152, 154, 182, GIA, GIB: Contact windows

[0053] 160: First electrode

[0054] 170: Photosensitive pattern

[0055] 180: Passivation layer

[0056] 184, 184D: Trench

[0057] 190: Second electrode

[0058] 210, 210W, 210R: First light-shielding structure

[0059] 212: Light-transmitting opening

[0060] 250: Shielding layer

[0061] BLU: Light Source

[0062] BL1: First connecting line

[0063] BL2: Second connecting line

[0064] BL2a, CL1a, CL2a, CL3a: Connecting terminals

[0065] BL2b: Main Segment

[0066] BL3: Third connecting line

[0067] C: Capacitor

[0068] CL1: First conductor

[0069] CL2: Second wire

[0070] CL3: Third conductor

[0071] D: Photosensitive composite

[0072] G180, Gref, Gref': grayscale

[0073] GI: Gate insulation layer

[0074] IC1: First Processing Component

[0075] IC2: Second processing element

[0076] IC3: Third Processing Component

[0077] L: Beam

[0078] P1, P2: Brightness

[0079] RC: Reading circuit

[0080] RL: Read line

[0081] RLA: Rolling Subregion

[0082] RSM, WSM: Secondary light-shielding structure

[0083] RSE: Reference Photosensitive Element

[0084] RSE-1: First Reference Photosensitive Element

[0085] RSE-2: Second Reference Photosensitive Element

[0086] RSE-3: Third Reference Sensor

[0087] SE: Photosensitive element

[0088] SL: Scan line

[0089] Sr, Sr': Relationship curves

[0090] Swi: Initial Relationship Curve

[0091] Swa: Degradation Relationship Curve

[0092] T: Thin-film transistor

[0093] Ta: First End

[0094] Tb: Second end

[0095] Tc: Control terminal

[0096] Td: Semiconductor pattern

[0097] WSE: Working image sensor

[0098] WSE-1: First working image sensor

[0099] WSE-2: Second working image sensor

[0100] WSE-3: Third working image sensor

[0101] x: First direction

[0102] z: Direction

[0103] ΔG: Difference Detailed Implementation

[0104] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0105] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to the other element, or an intermediate element may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, no intermediate element is present. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may involve the presence of other elements between the two elements.

[0106] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement under discussion and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” or “substantially” herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not require a single standard deviation to apply to all properties.

[0107] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0108] Figure 1 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention. Figure 2A This is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention. In particular, Figure 2A The working photosensitive element WSE of the photosensitive device 10 is shown. Figure 3 This is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention. In particular, Figure 3 The reference photosensitive element RSE of the photosensitive device 10 is shown.

[0109] Please refer to Figure 1 , Figure 2A and Figure 3 The photosensitive device 10 includes a substrate 110. In this embodiment, the substrate 110 may be glass, quartz, organic polymer, or other suitable materials. The substrate 110 has a working area 112 and a reference area 114 outside the working area 112. In this embodiment, the reference area 114 may be selectively disposed at least on the left and right sides of the working area 112. However, the present invention is not limited thereto, and the relative position of the reference area 114 and the working area 112 may be designed in other ways according to actual needs.

[0110] The photosensitive device 10 also includes a plurality of photosensitive elements SE. Each photosensitive element SE includes a readout circuit RC. For example, in this embodiment, the readout circuit RC may include a thin-film transistor T and a capacitor C. The thin-film transistor T includes a first terminal Ta, a second terminal Tb, a control terminal Tc, and a semiconductor pattern Td. The first terminal Ta and the second terminal Tb are electrically connected to two different regions of the semiconductor pattern Td, respectively. A gate insulating layer GI is provided between the control terminal Tc and the semiconductor pattern Td, and the capacitor C is electrically connected to the second terminal Tb of the thin-film transistor T.

[0111] In this embodiment, the photosensitive device 100 may further include an insulating layer 150 disposed on the control terminal Tc of the thin film transistor T. The first terminal Ta and the second terminal Tb of the thin film transistor T are disposed on the insulating layer 150 and are electrically connected to two different regions of the semiconductor pattern Td through the contact windows 152 and 154 of the insulating layer 150 and the contact windows Gia and GIb of the gate insulating layer GI, respectively. However, the present invention is not limited thereto.

[0112] The photosensitive device 100 also includes multiple interleaved readout lines RL and multiple scan lines SL. The first terminal Ta of the thin-film transistor T of each photosensitive element SE is electrically connected to a corresponding readout line RL. The control terminal Tc of the thin-film transistor T of each photosensitive element SE is electrically connected to a corresponding scan line SL.

[0113] Each photosensitive element SE further includes a photosensitive stack D electrically connected to a readout circuit RC. The photosensitive stack D includes a first electrode 160 electrically connected to the readout circuit RC, a photosensitive pattern 170 disposed on the first electrode 160, and a second electrode 190 disposed on the photosensitive pattern 170. In this embodiment, the first electrode 160 of the photosensitive stack D may be made of a reflective material, and the second electrode 190 of the photosensitive stack D may be made of a light-transmitting material. For example, in this embodiment, the first electrode 160 of the photosensitive stack D may be made of metal, the second electrode 190 of the photosensitive stack D may be made of indium tin oxide, and the photosensitive pattern 170 may be made of silicon-rich oxide (SRO), but the present invention is not limited thereto.

[0114] In this embodiment, each photosensitive element SE further includes a passivation layer 180 disposed on the photosensitive pattern 170 of the photosensitive element SE and having a contact window 182, wherein the second electrode 190 of each photosensitive element SE is electrically connected to the photosensitive pattern 170 through the contact window 182 of the passivation layer 180.

[0115] Each photosensitive element SE further includes a first light-shielding structure 210 disposed on the second electrode 190 of the photosensitive stack D. Specifically, in this embodiment, the photosensitive device 10 further includes an insulating layer 200, wherein the insulating layer 200 is disposed on the second electrode 190, and the first light-shielding structure 210 is disposed on the insulating layer 200. For example, in this embodiment, the material of the first light-shielding structure 210 may be metal, but the present invention is not limited thereto. In addition, in this embodiment, the photosensitive device 10 may also selectively include a plurality of insulating layers 220, 230, 240 stacked in sequence, the plurality of insulating layers 220, 230, 240 covering the first light-shielding structure 210 of each photosensitive element SE. In this embodiment, the first light-shielding structure 210 may have a common potential or a ground potential.

[0116] In this embodiment, the first conductive pattern 140 may be disposed between the first electrode 160 of the photosensitive stack D and the semiconductor pattern Td, and the first conductive pattern 140 overlaps the photosensitive pattern 170 in the direction z perpendicular to the substrate 110.

[0117] The plurality of photosensitive elements SE includes a plurality of working photosensitive elements WSE and a plurality of reference photosensitive elements RSE. The working photosensitive elements WSE are disposed in the working area 112 of the substrate 110, and the reference photosensitive elements RSE are disposed in the reference area 114 of the substrate 110. The structure of the working photosensitive elements WSE is substantially the same as that of the reference photosensitive elements RSE.

[0118] One difference between the working photosensitive element WSE and the reference photosensitive element RSE is that their first light-shielding structures 210W and 210R are different. Each working photosensitive element WSE has a first light-shielding structure 210W that overlaps with the photosensitive pattern 170 of the working photosensitive element WSE. Each reference photosensitive element RSE has a first light-shielding structure 210R that shields the photosensitive pattern 170 of the reference photosensitive element RSE. Another difference between the working photosensitive element WSE and the reference photosensitive element RSE is that each reference photosensitive element RSE also includes a second light-shielding structure RSM. The first light-shielding structure 210R and the second light-shielding structure RSM of each reference photosensitive element RSE are respectively disposed on the upper and lower sides of the photosensitive pattern 170 of the reference photosensitive element RSE, and the vertical projection of the photosensitive pattern 170 of the reference photosensitive element RSE onto the substrate 110 falls within the vertical projection of the second light-shielding structure RSM of the reference photosensitive element RSE onto the substrate 110.

[0119] For example, in this embodiment, the second light-shielding structure RSM of the reference photosensitive element RSE is disposed between the semiconductor pattern Td of the reference photosensitive element RSE and the substrate 110, and the second light-shielding structure RSM overlaps the semiconductor pattern Td and the photosensitive pattern 170 of the reference photosensitive element RSE in a direction z perpendicular to the substrate 110. In this embodiment, the second light-shielding structure RSM may be floating. In this embodiment, the photosensitive device 10 further includes a buffer layer 130 disposed on the second light-shielding structure RSM and located between the semiconductor pattern Td and the substrate 110.

[0120] In this embodiment, each working photosensitive element WSE may also include a second light-shielding structure WSM. The first light-shielding structure 210 and the second light-shielding structure WSM of each working photosensitive element WSE are respectively disposed on the upper and lower sides of the photosensitive pattern 170 of the working photosensitive element WSE. Unlike the reference photosensitive element RSE, at least a portion of the vertical projection of the photosensitive pattern 170 of each working photosensitive element WSE onto the substrate 110 will fall outside the vertical projection of the second light-shielding structure WSM onto the substrate 110. In this embodiment, the second light-shielding structure WSM may be floating.

[0121] In this embodiment, the second light-shielding structure RSM of the reference photosensitive element RSE is disposed between the semiconductor pattern Td of the reference photosensitive element RSE and the substrate 110, and the second light-shielding structure RSM of the reference photosensitive element RSE overlaps the semiconductor pattern Td and the photosensitive pattern 170 of the reference photosensitive element RSE in the direction z perpendicular to the substrate 110.

[0122] The photosensitive device 10 can be a fingerprint recognition device. A light beam L illuminates a fingerprint (not shown) on the working area 112, and the photosensitive pattern 170 of multiple working photosensitive elements WSE receives the light beam L reflected by the fingerprint, thereby obtaining a fingerprint image. A light source BLU provides the light beam L. In this embodiment, the light source BLU can be selectively disposed below the substrate 110. That is, in this embodiment, a backlight can be used to provide the light beam L illuminating the fingerprint. However, the invention is not limited to this; in other embodiments, a front light source disposed above the substrate 110 is also used to provide the light beam L illuminating the fingerprint.

[0123] After prolonged use, the photosensitive pattern 170 of the working photosensitive element WSE will gradually age due to the influence of the light beam L. In contrast, the reference photosensitive element RSE has a first light-shielding structure 210R and a second light-shielding structure RSM on its upper and lower sides, respectively, making the reference photosensitive element RSE less prone to aging. The reference photosensitive element RSE can be used to monitor the degradation level of the working photosensitive element WSE, thereby adjusting the illumination brightness of the light source BLU to correct the output grayscale of the working photosensitive element WSE. In the absence of light source BLU illumination, the background noise obtained by the reference photosensitive element RSE can be utilized; the background noise obtained by the reference photosensitive element RSE can also be used to correct the output grayscale of the working photosensitive element WSE, thereby improving the fingerprint signal or anti-counterfeiting signal.

[0124] The comparative example reference photosensitive element (not shown) is similar to the reference photosensitive element RSE of an embodiment of the present invention, except that the comparative example reference photosensitive element does not have a second light-shielding structure RSM directly below the photosensitive pattern. The following is in conjunction with... Figure 4 This demonstrates that the correction effect using the reference photosensitive element (RSE) according to an embodiment of the present invention is better.

[0125] Figure 4 The curve showing the relationship between the illumination intensity of the light source and the output grayscale of the photosensitive element is displayed. Figure 4 The diagram shows the initial relationship curve Swi between the illumination intensity of the light source BLU and the output grayscale of the working photosensitive element WSE according to an embodiment of the present invention. The initial relationship curve Swi represents the relationship between the illumination intensity of the light source BLU and the output grayscale of the working photosensitive element WSE before the working photosensitive element WSE deteriorates. Figure 4The diagram also shows a degradation curve Swa relating the illumination intensity of the light source BLU to the output grayscale of the working photosensitive element WSE in one embodiment. The degradation curve Swa represents the relationship between the illumination intensity of the light source BLU and the output grayscale of the working photosensitive element WSE after the working photosensitive element WSE has been degraded. Figure 4 The diagram also shows the relationship between the illumination intensity of the light source BLU and the output grayscale of the reference photosensitive element RSE according to an embodiment of the present invention, curve Sr. Figure 4 The curve Sr', showing the relationship between the illumination intensity of the light source BLU and the output grayscale of the reference photosensitive element of the comparative example, is also shown.

[0126] Please refer to Figure 1 , Figure 2A , Figure 3 and Figure 4 The relationship curve Sr of the reference image sensor RSE is used to calibrate the output grayscale of the working image sensor WSE. The difference ΔG between the average grayscale of the sensing area and the average grayscale Gref at a brightness P1 is defined as the baseline before degradation. Taking the average output grayscale G180 of the sensing area as an example, ΔG = G180 - Gref. When the working image sensor WSE degrades, the illumination intensity of the light source BLU is adjusted to P2 to maintain the difference of ΔG. However, Gref will also change to Gref', i.e., ΔG = G180 - Gref = G(P2) - Gref'. If the light-blocking effect of the reference image sensor in the comparative example is poor, its Gref' may rise too high, failing to meet ΔG, as shown in the trend of the relationship curve Sr'. Simultaneously, the reference image sensor RSE must satisfy the requirement that, under changes in the illumination intensity of the light source BLU, the difference between the average output grayscale of the working area and the average grayscale of the reference area must at least satisfy the grayscale variation (8 bits) from G0 to G200.

[0127] It is worth mentioning that, through the second light-shielding structure RSM of the reference photosensitive element RSE, in one embodiment of the present invention, the reference photosensitive element RSE can block more light beams L from illuminating its photosensitive pattern 170, making the relationship curve Sr flatter, and the effect of using the reference photosensitive element RSE to correct the degraded working photosensitive element WSE is excellent. The photosensitive device 10 can use the reference photosensitive element RSE to correct background noise and light degradation.

[0128] It must be noted that the following embodiments use the component reference numerals and some content from the foregoing embodiments, with the same reference numerals used to represent the same or similar components, and descriptions of the same technical content omitted. For explanations of the omitted parts, please refer to the foregoing embodiments; these will not be repeated in the following embodiments.

[0129] Figure 2B This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 2B The photosensitive device 10I and Figure 2AThe photosensitive device 10 is similar, but the difference between the two is: Figure 2B Each photosensitive element SE further includes a light-blocking pattern 250 disposed on the first light-blocking structure 210 of the photosensitive element SE, wherein the first light-blocking structure 210 is disposed between the light-blocking pattern 250 and the photosensitive pattern 170. In this embodiment, the light-blocking pattern 250 may be disposed between the insulating layer 220 and the insulating layer 230. In this embodiment, the material of the light-blocking pattern 250 is, for example, metal, but the present invention is not limited thereto. In this embodiment, the light-blocking pattern 250 may have a ground potential, but the present invention is not limited thereto.

[0130] Figure 5 This is a schematic cross-sectional view of a photosensitive device according to another embodiment of the present invention. In particular, Figure 5 The reference photosensitive element RSE of the photosensitive device 10A is shown.

[0131] Figure 6 This is a top view schematic diagram of a photosensitive device according to another embodiment of the present invention. In particular, Figure 6 The control terminal Tc and semiconductor pattern Td of the thin film transistor T of the reference photosensitive element RSE are shown, as well as the first electrode 160, photosensitive pattern 170 and second electrode 190 of the photosensitive stack D of the reference photosensitive element RSE, the contact window 182, the first light-shielding structure 210R of the reference photosensitive element RSE, and the second light-shielding structure RSM of the reference photosensitive element RSE.

[0132] Figure 7 Show Figure 6 The reference photosensitive element RSE has a thin film transistor Tc control terminal Tc, a semiconductor pattern Td, and a second light-shielding structure RSM. Figure 8 Show Figure 6 The reference photosensitive element RSE has a photosensitive stack D with a first electrode 160, a photosensitive pattern 170, a second electrode 190, and a contact window 182.

[0133] Please refer to Figure 5 The photosensitive device 10A in this embodiment is similar to the aforementioned photosensitive device 10, except that the second light-shielding structure RSM of the reference photosensitive element RSE in the photosensitive device 10A is different from the second light-shielding structure RSM of the reference photosensitive element RSE in the photosensitive device 10.

[0134] Please refer to Figure 5 , Figure 6 , Figure 7 and Figure 8Specifically, in this embodiment, the second light-shielding structure RSM of the reference photosensitive element RSE includes a bottom light-shielding pattern 120 and a first conductive pattern 140. The bottom light-shielding pattern 120 is disposed on the substrate 110. The first conductive pattern 140 is disposed above the bottom light-shielding layer 120, wherein the bottom light-shielding pattern 120 has an opening 122, and the first conductive pattern 140 blocks the opening 122 of the bottom light-shielding pattern 120. In other words, in this embodiment, the second light-shielding structure RSM is composed of the first conductive pattern 140 and the bottom light-shielding layer 120, which belong to two different film layers. In particular, the bottom light-shielding layer 120 of the second light-shielding structure RSM has an opening 122 that overlaps with the first conductive pattern 140 to reduce the coupling effect between the bottom light-shielding layer 120 and the first conductive pattern 140 and improve the electrical properties of the photosensitive device 10A.

[0135] Please refer to Figure 7 In this embodiment, an edge 140e of the first conductive pattern 140 and an edge 122e of the opening 122 of the bottom light-shielding pattern 120 are substantially aligned. However, the invention is not limited thereto. In other embodiments, the edge 122e of the opening 122 of the bottom light-shielding pattern 120 may also be recessed inward to below the first conductive pattern 140, so that the bottom light-shielding pattern 120 and the first conductive pattern 140 have an overlapping area to avoid light leakage caused by manufacturing process variations (i.e., misalignment between the bottom light-shielding pattern 120 and the first conductive pattern 140); the width of the overlapping area is, for example, 1 to 2 μm.

[0136] Figure 9 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 10 This is a top view schematic diagram of a photosensitive device according to another embodiment of the present invention.

[0137] Please refer to Figure 9 and Figure 10 The photosensitive device 10B in this embodiment is similar to the aforementioned photosensitive device 10A, except that the photosensitive element SE of the photosensitive device 10B is different from that of the photosensitive element SE of the photosensitive device 10A.

[0138] Please refer to Figure 9 and Figure 10 Specifically, in this embodiment, each photosensitive element SE further includes a shielding layer 250 disposed on the first light-shielding structure 210 of the photosensitive element SE, wherein the first light-shielding structure 210 is disposed between the shielding layer 250 and the photosensitive pattern 170. In this embodiment, the shielding layer 250 may be disposed between the insulating layer 230 and the insulating layer 240. In this embodiment, the material of the shielding layer 250 is, for example, metal, but the present invention is not limited thereto. In this embodiment, the shielding layer 250 may have a ground potential, but the present invention is not limited thereto.

[0139] Each photosensitive element SE has a shielding layer 250 with an opening 252 overlapping the photosensitive pattern 170. In this embodiment, the opening 252 of the shielding layer 250 of each reference photosensitive element RSE overlaps with the second light-shielding structure RSM of the reference photosensitive element RSE. In this embodiment, the opening 122 of the bottom light-shielding pattern 120 of each reference photosensitive element RSE overlaps with the opening 252 of the shielding layer 250 of the reference photosensitive element RSE. The shielding layer 250 can be disposed on the working photosensitive element WSE in the working area 112, and can shield the coupling noise caused when a finger is placed above the working photosensitive element WSE. The opening 252 of the shielding layer 250 can also serve as another opening structure on the light-transmitting opening 212 of the first light-shielding structure 210, forming a light-receiving angle design. When the shielding layer 250 is placed above the reference photosensitive element RSE in the reference area 114, it can extend arbitrarily in the reference area 114 and overlap the first light-shielding structure 210 as another light-shielding structure to avoid the risk of light transmission in the first light-shielding structure 210; that is, in another embodiment, the shielding layer 250 placed above the reference photosensitive element RSE in the reference area 114 can also cover the entire surface like the first light-shielding structure 210R of the reference photosensitive element RSE.

[0140] Figure 11 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 12 This is a top view of the first electrode, photosensitive pattern, second electrode, contact window, and trench of the passivation layer of a photosensitive stack of a reference photosensitive element according to another embodiment of the present invention.

[0141] Please refer to Figure 11 and Figure 12 The photosensitive device 10C in this embodiment is similar to the aforementioned photosensitive device 10, except that the passivation layer 180 of the photosensitive device 10C is different from that of the photosensitive device 10. Specifically, in this embodiment, the passivation layer 180 of the reference photosensitive element RSE has a groove 184 in addition to the contact window 182. The groove 184 is located next to the photosensitive pattern 170 of the reference photosensitive element RSE, and the first light-shielding structure 210R of the reference photosensitive element RSE is filled into the groove 184. The portion of the first light-shielding structure 210R filled into the groove 184 forms a side light-shielding structure, which can prevent the light beam L from being transmitted from the side of the photosensitive pattern 170 to the photosensitive pattern 170. Through the portion of the first light-shielding structure 210R filled into the groove 184, the reference photosensitive element RSE is less affected by the light beam L, and can perform better in correcting the working photosensitive element WSE (see reference). Figure 1 and Figure 2A () function.

[0142] In this embodiment, the trenches 184 of the passivation layer 180 may surround the photosensitive pattern 170 of the reference photosensitive element RSE. For example, in this embodiment, the trenches 184 of the passivation layer 180 may be U-shaped, but the invention is not limited thereto. In other embodiments, the passivation layer 180 may also be designed in other suitable shapes.

[0143] Figure 13 This is a cross-sectional schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 14 This is a top view of the first electrode, photosensitive pattern, second electrode, contact window, and trench of the photosensitive stack of a reference photosensitive element according to another embodiment of the present invention.

[0144] Please refer to Figure 13 and Figure 14 The photosensitive device 10D in this embodiment is similar to the aforementioned photosensitive device 10C, except that the trench 184D of the passivation layer 180 of the photosensitive device 10D is different from the trench 184 of the passivation layer 180 of the photosensitive device 10C. Specifically, in this embodiment, the trench 184D of the passivation layer 180 of the photosensitive device 10D is disposed on one side of the photosensitive pattern 170 of the reference photosensitive element RSE. For example, when a reference photosensitive element RSE is located on the right side of the working area 112, the trench 184D is disposed on the left side of the photosensitive pattern 170 of the reference photosensitive element RSE to block the light beam L from the left side, but the present invention is not limited thereto. In this embodiment, the trench 184D of the passivation layer 180 may be in a straight line shape, but the present invention is not limited thereto.

[0145] Figure 15 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention. Figure 16 This is a schematic diagram of a photosensitive device according to an embodiment of the present invention. Figure 15 Show Figure 16 The substrate 110 includes a first working area 112A, a second working area 112B, a third working area 112C, a first reference area 114A, a second reference area 114B, a third reference area 114C, a first processing element IC1, a second processing element IC2, and a third processing element IC3, while omitting other components.

[0146] Please refer to Figure 15 and Figure 16The photosensitive device 10E in this embodiment is similar to the aforementioned photosensitive devices 10, 10A to 10D. In this embodiment, the connection relationships between the first working area 112A, the second working area 112B, the third working area 112C, the first reference area 114A, the second reference area 114B, and the third reference area 114C, as well as the multiple working photosensitive elements WSE and multiple reference photosensitive elements RSE located in the first working area 112A, the second working area 112B, the third working area 112C, the first reference area 114A, the second reference area 114B, and the third reference area 114C, and the first processing element IC1, the second processing element IC2, and the third processing element IC3 are shown more clearly.

[0147] In this embodiment, the working area 112 of the substrate 110 includes a first working area 112A, a second working area 112B, and a third working area 112C, and the reference area 114 of the substrate 110 includes a first reference area 114A, a second reference area 114B, and a third reference area 114C. The first working area 112A, the second working area 112B, and the third working area 112C are arranged sequentially in the first direction x, and the first reference area 114A, the second reference area 114B, and the third reference area 114C are respectively disposed corresponding to the first working area 112A, the second working area 112B, and the third working area 112C.

[0148] In this embodiment, the plurality of working photosensitive elements WSE of the photosensitive device 10E includes a plurality of first working photosensitive elements WSE-1, a plurality of second working photosensitive elements WSE-2, and a plurality of third working photosensitive elements WSE-3 respectively disposed in the first working area 112A, the second working area 112B, and the third working area 112C; the plurality of reference photosensitive elements RSE of the photosensitive device 10E includes a plurality of first reference photosensitive elements RSE-1, a plurality of second reference photosensitive elements RSE-2, and a plurality of third reference photosensitive elements RSE-3 respectively disposed in the first reference area 114A, the second reference area 114B, and the third reference area 114C.

[0149] In this embodiment, the photosensitive device 10E includes a first processing element IC1, a second processing element IC2, and a third processing element IC3. A plurality of first operational photosensitive elements WSE-1 are electrically connected to the first processing element IC1, a plurality of second operational photosensitive elements WSE-2 are electrically connected to the second processing element IC2, and a plurality of third operational photosensitive elements WSE-3 are electrically connected to the third processing element IC3. Specifically, a plurality of first reference photosensitive elements RSE-1, a plurality of second reference photosensitive elements RSE-2, and a plurality of third reference photosensitive elements RSE-3 are each electrically connected to the first processing element IC1, the second processing element IC2, and the third processing element IC3. In this embodiment, the first processing element IC1, the second processing element IC2, and the third processing element IC3 are, for example, a plurality of integrated circuits.

[0150] The multiple output grayscale levels corresponding to the multiple first working photosensitive elements WSE-1 are calibrated based on multiple reference signals of the multiple first reference photosensitive elements RSE-1. The multiple output grayscale levels corresponding to the multiple second working photosensitive elements WSE-2 are calibrated based on multiple reference signals of the multiple second reference photosensitive elements RSE-2. The multiple output grayscale levels corresponding to the multiple third working photosensitive elements WSE-3 are calibrated based on multiple reference signals of the multiple third reference photosensitive elements RSE-3.

[0151] In this embodiment, multiple first working photosensitive elements WSE-1 and multiple first reference photosensitive elements RSE-1 are electrically connected to the same first processing element IC1, multiple second working photosensitive elements WSE-2 and multiple second reference photosensitive elements RSE-2 are electrically connected to the same second processing element IC2, and multiple third working photosensitive elements WSE-3 and multiple third reference photosensitive elements RSE-3 are electrically connected to the same third processing element IC3. That is, each working photosensitive element WSE is calibrated using a reference photosensitive element RSE electrically connected to the same processing element. The background noise of each working photosensitive element WSE and the reference photosensitive element RSE used for calibration is the same or similar, thus resulting in excellent calibration performance.

[0152] In this embodiment, the second reference area 114B includes a first sub-area 114B-1. The first portions of a plurality of second reference photosensitive elements RSE-2 are disposed in the first sub-area 114B-1 of the second reference area 114B, and the first sub-area 114B-1 of the second reference area 114B is located between the first working area 112A and the second working area 112B. The first sub-area 114B-1 of the second reference area 114B has at least one row of second reference photosensitive elements RSE-2. In this embodiment, the first sub-area 114B-1 of the second reference area 114B is exemplified by having two rows of second reference photosensitive elements RSE-2. However, the present invention is not limited thereto, and the number of rows of second reference photosensitive elements RSE-2 disposed in the first sub-area 114B-1 of the second reference area 114B can be determined according to actual needs. The more rows of second reference photosensitive elements RSE-2 there are, the better the correction effect. In an embodiment not shown, the number of rows of second reference photosensitive elements RSE-2 disposed in the first sub-region 114B-1 of the second reference area 114B can also be 3 or more. However, the present invention is not limited to this. In another embodiment not shown, the number of rows of second reference photosensitive elements RSE-2 disposed in the first sub-region 114B-1 of the second reference area 114B can also be 1, and interpolation is used to correct the second reference photosensitive elements RSE-2, so that the output grayscale of the working area 112 avoids discontinuity of the sensed image due to the reference photosensitive elements RSE.

[0153] In this embodiment, the second reference area 114B further includes a second sub-area 114B-2, and the second portions of a plurality of second reference photosensitive elements RSE-2 are disposed in the second sub-area 114B-2 of the second reference area 114B, and the second sub-area 114B-2 of the second reference area 114B is located between the second working area 112B and the third working area 112C. The second sub-area 114B-2 of the second reference area 114B has at least one row of second reference photosensitive elements RSE-2. In this embodiment, the second sub-area 114B-2 of the second reference area 114B is exemplified by having two rows of second reference photosensitive elements RSE-2. However, the present invention is not limited thereto, and the number of rows of second reference photosensitive elements RSE-2 disposed in the second sub-area 114B-2 of the second reference area 114B can be determined according to actual needs. The more rows of second reference photosensitive elements RSE-2 there are, the better the correction effect. In an embodiment not shown, the number of rows of second reference photosensitive elements RSE-2 disposed in the second sub-region 114B-2 of the second reference region 114B can also be 3 or more. However, the present invention is not limited to this. In another embodiment not shown, the number of rows of second reference photosensitive elements RSE-2 disposed in the second sub-region 114B-2 of the second reference region 114B can also be 1, and interpolation is used to compensate for its deficiency.

[0154] In this embodiment, the substrate 110 has a first edge 110a and a second edge 110b, wherein the first processing element IC1, the second processing element IC2 and the third processing element IC3 are disposed closer to the second edge 110b, while the first edge 110a is farther away from the first processing element IC1, the second processing element IC2 and the third processing element IC3. In this embodiment, the second reference area 114B further includes a third sub-area 114B-3 and a fourth sub-area 114B-4. The third portion of a plurality of second reference photosensitive elements RSE-2 is disposed in the third sub-area 114B-3 of the second reference area 114B. The third sub-area 114B-3 of the second reference area 114B is located between the first edge 110a of the substrate 110 and the second working area 112B, and between the first sub-area 114B-1 and the second sub-area 114B-2 of the second reference area 114B. The fourth portion of a plurality of second reference photosensitive elements RSE-2 is disposed in the fourth sub-area 114B-4 of the second reference area 114B. The fourth sub-area 114B-4 of the second reference area 114B is located between the second edge 110b of the substrate 110 and the second working area 112B, and between the first sub-area 114B-1 and the second sub-area 114B-2 of the second reference area 114B.

[0155] In short, in this embodiment, the second reference area 114B includes a first sub-area 114B-1, a second sub-area 114B-2, a third sub-area 114B-3, and a fourth sub-area 114B-4. The first sub-area 114B-1, the second sub-area 114B-2, the third sub-area 114B-3, and the fourth sub-area 114B-4 of the second reference area 114B form a frame-shaped area that surrounds the second working area 112B and is located between the first working area 112A and the third working area 112C.

[0156] In this embodiment, the first reference area 114A may be a U-shaped area disposed on the upper, lower and left sides of the first working area 112A; the third reference area 114C may be another U-shaped area disposed on the upper, lower and right sides of the third working area 112C; however, the present invention is not limited thereto.

[0157] In this embodiment, the photosensitive device 10E further includes at least one first conductor CL1, at least one first connecting line BL1, at least one second conductor CL2, at least one second connecting line BL2, at least one third conductor CL3, and at least one third connecting line BL3. The at least one first conductor CL1 is electrically connected to a plurality of first operational photosensitive elements WSE-1 and a first processing element IC1. The at least one first connecting line BL1 is electrically connected to at least a portion of a plurality of first reference photosensitive elements RSE-1 and the first processing element IC1. The at least one second conductor CL2 is electrically connected to a plurality of second operational photosensitive elements WSE-2 and a second processing element IC2. The at least one second connecting line BL2 is electrically connected to at least a portion of a plurality of second reference photosensitive elements RSE-2 and the second processing element IC2. The at least one third conductor CL3 is electrically connected to a plurality of third operational photosensitive elements WSE-3 and a third processing element IC3. The at least one third connecting line BL3 is electrically connected to at least a portion of a plurality of third reference photosensitive elements RSE-3 and the third processing element IC3.

[0158] Figure 17 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 18 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 17 Show Figure 10 The substrate 110 includes a first working area 112A, a second working area 112B, a third working area 112C, a first reference area 114A, a second reference area 114B, a third reference area 114C, a first processing element IC1, a second processing element IC2, a third processing element IC3, and a second connecting line BL2, while omitting other components.

[0159] Figure 17 and Figure 18 The photosensitive device 10F and Figure 15 and Figure 16Similar to the photosensitive device 10E, the difference between the two is that the positions of the first sub-region 114B-1 and the second sub-region 114B-2 of the second reference area 114B are different.

[0160] Please refer to Figure 17 and Figure 18 Specifically, in this embodiment, the first working area 112A is located between the first sub-area 114B-1 of the second reference area 114B and the second working area 112B, and a portion of the first reference area 114A is located between the first sub-area 114B-1 of the second reference area 114B and the first working area 112A. In short, in this embodiment, all photosensitive elements SE form a photosensitive array, and the first sub-area 114B-1 of the second reference area 114B can be the leftmost region in the photosensitive array.

[0161] In this embodiment, the third working area 112C is located between the second sub-area 114B-2 of the second reference area 114B and the second working area 112B, and a portion of the third reference area 114C is located between the second sub-area 114B-2 of the second reference area 114B and the third working area 112C. In short, in this embodiment, all photosensitive elements SE form a photosensitive array, and the second sub-area 114B-2 of the second reference area 114B can be the rightmost region of the photosensitive array.

[0162] By placing the first sub-region 114B-1 of the second reference area 114B and the second working area 112B on the outer region of the photosensitive array, the first working area 112A, the second working area 112B and the third working area 112C can form a more continuous working area 112, thereby improving the visual effect of the photosensitive device 10F.

[0163] The second connection line BL2 is electrically connected to at least a portion of the plurality of second reference photosensitive elements RSE-2 and the second processing element IC2. In this embodiment, the second connection line BL2, which is electrically connected to the second reference photosensitive element RSE-2 located in the first sub-region 114B-1 (e.g., in...), is... Figure 18 A second connecting line BL2, slightly to the left of the first working area 112A, can be positioned between the first working area 112A and the second working area 112B; the second connecting line BL2, which is electrically connected to the second reference photosensitive element RSE-2 located in the second sub-area 114B-2 (e.g., in... Figure 18 Another second connection line (BL2) located slightly to the right can be disposed between the second working area 112B and the third working area 112C. In this embodiment, multiple second connection lines BL2 electrically connected to the second reference photosensitive element RSE-2 located in the first sub-area 114B-1 and the second sub-area 114B-2 can also be disposed between the photosensitive array formed by multiple photosensitive elements SE and the first edge 110a of the substrate 110.

[0164] Figure 19 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 20 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 19 Show Figure 20 The substrate 110 includes a first working area 112A, a second working area 112B, a third working area 112C, a first reference area 114A, a second reference area 114B, a third reference area 114C, a first processing element IC1, a second processing element IC2, a third processing element IC3, and a second connecting line BL2, while omitting other components.

[0165] Figure 19 and Figure 20 The 10G photosensitive device and Figure 17 and Figure 18 The photosensitive device is similar to the 10F, the difference being the position of the second connecting line BL2. Please refer to... Figure 19 and Figure 20 Specifically, in this embodiment, the first wire CL1, which is electrically connected to the first working photosensitive element WSE-1 located in the first working area 112A, can be connected to the second connecting wire BL2, which is electrically connected to the second reference photosensitive element RSE-2 located in the first sub-area 114B-1 (e.g., ...). Figure 20 The second connecting line BL2, which is slightly to the left, crosses over the first conductor CL1 and the second connecting line BL2, which belong to different conductive layers.

[0166] The third conductor CL3 is electrically connected to the third working photosensitive element WSE-3 located in the third working area 112C, and the second connecting line BL2 is electrically connected to the second reference photosensitive element RSE-2 located in the second sub-area 114B-2 (e.g., Figure 20 The second connecting line BL2, which is slightly to the right of the first connecting line, crosses over the second connecting line BL2. The third conductor CL3 and the second connecting line BL2 belong to different conductive layers.

[0167] Figure 21 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 22 This is a schematic diagram of a photosensitive device according to another embodiment of the present invention. Figure 21 Show Figure 22 The substrate 110 includes a first working area 112A, a second working area 112B, a third working area 112C, a first reference area 114A, a second reference area 114B, a third reference area 114C, a first processing element IC1, a second processing element IC2, and a second connecting line BL2, while omitting other components.

[0168] Figure 21 and Figure 22 The 10G photosensitive device and Figure 17 and Figure 18 The photosensitive device is similar to the 10F, and the differences between the two are as follows.

[0169] Please refer to Figure 21 and Figure 22 In this embodiment, a plurality of first working photosensitive elements WSE-1 are electrically connected to a first processing element IC1, a plurality of third working photosensitive elements WSE-3 are electrically connected to a second processing element IC2, a first portion of a plurality of second working photosensitive elements WSE-2 is electrically connected to the first processing element IC1, and a second portion of a plurality of second working photosensitive elements WSE-2 is electrically connected to the second processing element IC2.

[0170] At least one second conductor CL2 in the first part (e.g. in Figure 22 A second conductor CL2, located slightly to the left, is electrically connected to the first portion of multiple second working photosensitive elements WSE-2 and the first processing element IC1. At least one second portion of the second conductor CL2 (e.g., in...) Figure 22 A second conductor CL2, located slightly to the right, electrically connects to the second portion of multiple second working photosensitive elements WSE-2 and the second processing element IC2. At least one second connection line BL2, located on the first portion (e.g., in...), connects to the second portion of the second working photosensitive elements WSE-2 and the second processing element IC2. Figure 22 A second connecting line BL2, located slightly to the left of the first sub-region 114B-1, electrically connects a first portion of a plurality of second reference photosensitive elements RSE-2 and a first processing element IC1. At least one third connecting line CL3 electrically connects a plurality of third operational photosensitive elements WSE-3 and a second processing element IC2. At least one third connecting line BL3 electrically connects at least a portion of the plurality of third reference photosensitive elements RSE-3 and a second processing element IC2.

[0171] It is worth noting that at least one second connecting line BL2 in the first part (e.g., in Figure 22 The second connecting line BL2, which is slightly to the left, has at least one connection terminal BL2a connected to the first processing element IC1. Multiple first conductors CL1 have multiple connection terminals CL1a connected to the first processing element IC1. The first portion of the multiple second conductors CL2 (e.g., in...) Figure 22 One of the second conductors CL2, which is located on the left side, has at least one connection terminal CL2a connected to the first processing element IC1. At least one connection terminal BL2a of the first portion of at least one second connection line BL2 is disposed between the multiple connection terminals CL1a of the multiple first conductors CL1 and the at least one connection terminal CL2a of the first portion of the multiple second conductors CL2.

[0172] The second part of multiple second conductors CL2 (e.g., in) Figure 22One of the second conductors CL2, located slightly to the right, is electrically connected to the second processing element IC2. The second portions of multiple second conductors CL2 have at least one connection terminal CL2a connected to the second processing element IC2. Multiple third conductors CL3 have multiple connection terminals CL3a connected to the second processing element IC2. The second portions of multiple second reference photosensitive elements RSE-2 are disposed in the second sub-region 114B-2 of the second reference region 114B. The third working region 112C is located between the second working region 112B and the second sub-region 114B-2 of the second reference region 114B. The second portion of at least one second connecting line BL2 (e.g., in...) Figure 22 Another second connecting line (BL2) located slightly to the right is electrically connected to the second portion of a plurality of second reference photosensitive elements RSE-2 and the second processing element IC2, and has at least one connection terminal BL2a connected to the second processing element IC2. At least one connection terminal BL2a of the second portion of at least one second connecting line BL2 is disposed between at least one connection terminal CL2a of the second portion of a plurality of second conductors CL2 and a plurality of connection terminals CL3a of a plurality of third conductors CL3a.

[0173] At least one second connecting line BL2 in the first part (e.g. in Figure 22 The second connecting line BL2, which is located slightly to the left, has at least one main segment BL2b. The at least one main segment BL2b of the first portion of the at least one second connecting line BL2 connects the first portions of a plurality of second reference photosensitive elements RSE-2 and at least one connecting end BL2a of the first portion of the at least one second connecting line BL2. The at least one main segment BL2b of the at least one second connecting line BL2 is located between the first working area 112A and the second working area 112B. The second portion of the at least one second connecting line BL2 (e.g., in...) Figure 22 Another second connecting line BL2 on the right side has at least one main segment BL2b. At least one main segment BL2b of the second part of the second connecting line BL2 connects to the second part of a plurality of second reference photosensitive elements RSE-2 located in the second sub-region 114B-2 and at least one connecting end BL2a of the second part of the second connecting line BL2. At least one main segment BL2b of the second part of the second connecting line BL2 is disposed between the second working area 112B and the third working area 112C.

[0174] The sensing device 10H in this embodiment can operate in a partial rolling sensing mode. The partial rolling sensing mode reduces the sensing area and increases the number of sensing frames, mainly to enable fingerprint scrolling and pressing for collection. In the partial rolling sensing mode, due to the size limitation of the rolling sub-area RLA, the first processing element IC1 and the second processing element IC2 only need to read the sensing signals of the second connecting line BL2 and the second wire CL2 of the corresponding working area 112 rolling sub-area RLA. The first processing element IC1 and the second processing element IC2 do not need to read the sensing signals of the first wire CL1, the first connecting line BL1, the third wire CL3 and the third connecting line BL3.

[0175] In this embodiment, multiple connection ends CL1a of multiple first conductors CL1, and a first portion of at least one second connecting line BL2 (e.g., in...) Figure 22 At least one connection end BL2a of the second connecting line BL2 (leaning slightly to the left) and the first portion of the plurality of second conductors CL2 (e.g., in Figure 22 At least one terminal CL2a of the second conductor CL2 (leaning slightly to the left) is sequentially electrically connected to multiple pins (not shown) of the first processing element IC1; the second portion of the multiple second conductors CL2 (e.g., in...) Figure 22 At least one connection terminal CL2a of the second conductor CL2 (located on the right side of the conductor), and the second portion of at least one second connecting line BL2 (e.g., in... Figure 22 At least one terminal BL2a of the second connecting line BL2 (located slightly to the right) and multiple terminals CL3a of the multiple third conductors CL3a are sequentially electrically connected to multiple pins (not shown) of the second processing element IC2. Therefore, even though the first processing element IC1 and the second processing element IC2 do not support discontinuous reading mode, the photosensitive device 10H can still operate smoothly in partial scrolling sensing mode.

Claims

1. A photosensitive device, comprising: The substrate has a first working area, a second working area, a third working area, a first reference area, a second reference area, and a third reference area, wherein the first working area, the second working area, and the third working area are arranged sequentially in a first direction, and the first reference area, the second reference area, and the third reference area are respectively disposed corresponding to the first working area, the second working area, and the third working area. A plurality of first working photosensitive elements, a plurality of second working photosensitive elements, and a plurality of third working photosensitive elements are respectively disposed in the first working area, the second working area, and the third working area, wherein each of the first working photosensitive elements, the second working photosensitive elements, and the third working photosensitive elements includes a photosensitive pattern and a first light-shielding structure disposed on the photosensitive pattern, and the first light-shielding structure of each of the first working photosensitive elements, the second working photosensitive elements, and the third working photosensitive elements has a light-transmitting opening overlapping the photosensitive pattern; A plurality of first reference photosensitive elements, a plurality of second reference photosensitive elements, and a plurality of third reference photosensitive elements are respectively disposed in the first reference area, the second reference area, and the third reference area, wherein each of the first reference photosensitive elements, the second reference photosensitive elements, and the third reference photosensitive elements includes a photosensitive pattern and a first light-blocking structure disposed on the photosensitive pattern, and the first light-blocking structure of each of the first reference photosensitive elements, the second reference photosensitive elements, and the third reference photosensitive elements blocks the photosensitive pattern; A first processing element, a second processing element, and a third processing element, wherein the first working photosensitive elements are electrically connected to the first processing element, the second working photosensitive elements are electrically connected to the second processing element, the third working photosensitive elements are electrically connected to the third processing element, and the first, second, and third reference photosensitive elements are each electrically connected to the first, second, and third processing elements. The multiple output gray levels corresponding to the multiple first working photosensitive elements are corrected based on multiple reference signals of the multiple first reference photosensitive elements; the multiple output gray levels corresponding to the multiple second working photosensitive elements are corrected based on multiple reference signals of the multiple second reference photosensitive elements; and the multiple output gray levels corresponding to the multiple third working photosensitive elements are corrected based on multiple reference signals of the multiple third reference photosensitive elements.

2. The photosensitive device of claim 1, wherein the second reference region includes a first sub-region, a first portion of the second reference photosensitive elements is disposed in the first sub-region of the second reference region, and the first sub-region of the second reference region is located between the first working region and the second working region.

3. The photosensitive device of claim 2, wherein the second reference region further includes a second sub-region, a second portion of the second reference photosensitive elements is disposed in the second sub-region of the second reference region, and the second sub-region of the second reference region is located between the second working region and the third working region.

4. The photosensitive device of claim 1, wherein the second reference region includes a first sub-region, a first portion of the second reference photosensitive elements is disposed in the first sub-region of the second reference region, and the first working region is located between the first sub-region of the second reference region and the second working region.

5. The photosensitive device as claimed in claim 4, further comprising: At least one first wire electrically connects the first working photosensitive elements and the first processing element; At least one first connection line electrically connects at least a portion of the first reference photosensitive elements and the first processing element; At least one second wire electrically connects the second working photosensitive elements and the second processing element; At least one second connection line electrically connects at least a portion of the second reference photosensitive elements and the second processing element; At least one third wire electrically connects the third working photosensitive elements and the third processing element; and At least one third connection line electrically connects at least a portion of the third reference photosensitive elements and the third processing element; The at least one second connecting line is disposed between the first working area and the second working area.

6. The photosensitive device as claimed in claim 4, further comprising: At least one first wire electrically connects the first working photosensitive elements and the first processing element; At least one first connection line electrically connects at least a portion of the first reference photosensitive elements and the first processing element; At least one second wire electrically connects the second working photosensitive elements and the second processing element; At least one second connection line electrically connects at least a portion of the second reference photosensitive elements and the second processing element; At least one third wire electrically connects the third working photosensitive elements and the third processing element; and At least one third connection line electrically connects at least a portion of the third reference photosensitive elements and the third processing element; The at least one first conductor crosses over the at least one second connecting line.

7. The photosensitive device of claim 4, wherein the second reference region further includes a second sub-region, a second portion of the second reference photosensitive elements is disposed in the second sub-region of the second reference region, and the third working region is located between the second working region and the second sub-region of the second reference region.

8. The photosensitive device as claimed in claim 7, further comprising: At least one first wire electrically connects the first working photosensitive elements and the first processing element; At least one first connection line electrically connects at least a portion of the first reference photosensitive elements and the first processing element; At least one second wire electrically connects the second working photosensitive elements and the second processing element; At least one second connection line electrically connects at least a portion of the second reference photosensitive elements and the second processing element; At least one third wire electrically connects the third working photosensitive elements and the third processing element; and At least one third connection line electrically connects at least a portion of the third reference photosensitive elements and the third processing element; The at least one second connecting line is also disposed between the second work area and the third work area.

9. The photosensitive device as claimed in claim 7, further comprising: At least one first wire electrically connects the first working photosensitive elements and the first processing element; At least one first connection line electrically connects at least a portion of the first reference photosensitive elements and the first processing element; At least one second wire electrically connects the second working photosensitive elements and the second processing element; At least one second connection line electrically connects at least a portion of the second reference photosensitive elements and the second processing element; At least one third wire electrically connects the third working photosensitive elements and the third processing element; and At least one third connection line electrically connects at least a portion of the third reference photosensitive elements and the third processing element; The at least one third conductor crosses over the at least one second connecting line.

10. A photosensitive device, comprising: A substrate has a first working area, a second working area, a third working area, a first reference area, a second reference area, and a third reference area, wherein the first working area, the second working area, and the third working area are arranged sequentially in a first direction, and the first reference area, the second reference area, and the third reference area are respectively disposed corresponding to the first working area, the second working area, and the third working area. The second reference area includes a first sub-area, and the first working area is located between the first sub-area and the second working area of ​​the second reference area. A plurality of first working photosensitive elements, a plurality of second working photosensitive elements, and a plurality of third working photosensitive elements are respectively disposed in the first working area, the second working area, and the third working area, wherein each of the first working photosensitive elements, the second working photosensitive elements, and the third working photosensitive elements includes a photosensitive pattern and a first light-shielding structure disposed on the photosensitive pattern, and the first light-shielding structure of each of the first working photosensitive elements, the second working photosensitive elements, and the third working photosensitive elements has a light-transmitting opening overlapping the photosensitive pattern; A plurality of first reference photosensitive elements, a plurality of second reference photosensitive elements, and a plurality of third reference photosensitive elements are respectively disposed in the first reference area, the second reference area, and the third reference area. Each of the first reference photosensitive elements, the second reference photosensitive elements, and the third reference photosensitive elements includes a photosensitive pattern and a first light-blocking structure disposed on the photosensitive pattern. The first light-blocking structure of each of the first reference photosensitive elements, the second reference photosensitive elements, and the third reference photosensitive elements blocks the photosensitive pattern. A first portion of each of the second reference photosensitive elements is disposed in the first sub-area of ​​the second reference area. A first processing element and a second processing element, wherein the first working photosensitive elements are electrically connected to the first processing element, the third working photosensitive elements are electrically connected to the second processing element, a first portion of the second working photosensitive elements is electrically connected to the first processing element, and a second portion of the second working photosensitive elements is electrically connected to the second processing element. At least one first wire electrically connects the first working photosensitive elements and the first processing element; At least one first connection line electrically connects at least a portion of the first reference photosensitive elements and the first processing element; At least one second wire, wherein a first portion of the at least one second wire is electrically connected to a first portion of the second working photosensitive elements and the first processing element; At least one second connection line, wherein a first portion of the at least one second connection line is electrically connected to the first portion of the second reference photosensitive elements and the first processing element; At least one third wire electrically connects the third working photosensitive elements and the second processing element; and At least one third connection line electrically connects at least a portion of the third reference photosensitive elements and the second processing element; The at least one second connecting line has a first portion having at least one connection terminal connected to the first processing element; the first wires have multiple connection terminals connected to the first processing element; the first portion of the second wires has at least one connection terminal connected to the first processing element; and the at least one connection terminal of the first portion of the at least one second connecting line is disposed between the connection terminals of the first wires and the at least one connection terminal of the first portion of the second wires. The multiple output gray levels corresponding to the multiple first working photosensitive elements are corrected based on multiple reference signals of the multiple first reference photosensitive elements; the multiple output gray levels corresponding to the multiple second working photosensitive elements are corrected based on multiple reference signals of the multiple second reference photosensitive elements; and the multiple output gray levels corresponding to the multiple third working photosensitive elements are corrected based on multiple reference signals of the multiple third reference photosensitive elements.

11. The photosensitive device of claim 10, wherein the first portion of the at least one second connecting line has at least one main segment, the at least one main segment of the first portion of the at least one second connecting line connects the first portion of the second reference photosensitive elements and the at least one connecting end of the first portion of the at least one second connecting line, and the at least one main segment of the at least one second connecting line is disposed between the first working area and the second working area.

12. The photosensitive device of claim 10, wherein a second portion of the second conductors is electrically connected to the second processing element, the second portion of the second conductors has at least one connection terminal connected to the second processing element, the third conductors have a plurality of connection terminals connected to the second processing element, the second portion of the second reference photosensitive elements is disposed in a second sub-region of the second reference region, the third working region is located between the second working region and the second sub-region of the second reference region, a second portion of the at least one second connecting line is electrically connected to the second portion of the second reference photosensitive elements and the second processing element and has at least one connection terminal connected to the second processing element, the at least one connection terminal of the second portion of the at least one second connecting line is disposed between the at least one connection terminal of the second portion of the second conductors and the connection terminals of the third conductors.

13. The photosensitive device of claim 12, wherein the second portion of the at least one second connecting line has at least one main segment, the at least one main segment of the second portion of the at least one second connecting line connects the second portion of the second reference photosensitive elements and the at least one connecting end of the second portion of the at least one second connecting line, and the at least one main segment of the second portion of the at least one second connecting line is disposed between the second working area and the third working area.

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