Electronic device and temperature compensation method

Abstract

The application discloses an electronic device and a temperature compensation method, and belongs to the technical field of temperature compensation. The electronic device comprises a sensor, a thermoelectric component and a signal processing unit; the first end of the thermoelectric component is in contact with the sensor; the second end of the thermoelectric component is also connected with a heat dissipation area of the electronic device; the second end of the thermoelectric component is connected with the input end of the signal processing unit; the thermoelectric component is used for outputting a first voltage signal to the signal processing unit through the second end in the case that there is a temperature difference between the first end and the second end; and the signal processing unit is used for generating a temperature adjustment signal based on the first voltage signal and performing temperature compensation on the sensor according to the temperature adjustment signal.

Description

Technical Field

[0001] This application belongs to the field of temperature compensation technology, specifically relating to an electronic device and a temperature compensation method. Background Technology

[0002] The performance of temperature-sensitive sensors such as infrared sensors, synthetic aperture radar (SAR), and gyroscopes is significantly affected by temperature changes, resulting in inaccurate output of sensor data. For example, the infrared noise floor decreases as temperature rises and increases as temperature falls. When infrared sensors are used in electronic devices such as mobile phones, this can lead to incorrect screen-on / off interactions. To improve the user experience, the temperature drift problem urgently needs to be addressed.

[0003] In existing technologies, for temperature-sensitive sensors without integrated temperature detection, compensation is primarily achieved through software algorithms that reuse temperatures detected by other components such as the motherboard. However, since there is a difference between the temperatures detected by these other components and the actual sensor temperature, miscompensation or inaccurate compensation can occur. For example, using a gyroscope or a negative temperature coefficient (NTC) temperature sensor to compensate for infrared noise floor can lead to overcompensation due to inconsistent temperature rise between the gyroscope and the infrared photosensitive area, resulting in screen failure and negatively impacting user experience. Summary of the Invention

[0004] The purpose of this application is to provide an electronic device and a temperature compensation method that can avoid the problems of miscompensation or inaccurate compensation.

[0005] In a first aspect, embodiments of this application provide an electronic device, which includes: a sensor, a thermoelectric component, and a signal processing unit;

[0006] The first end of the thermoelectric component is in contact with the sensor; the second end of the thermoelectric component is connected to the heat dissipation area of ​​the electronic device; the second end of the thermoelectric component is also connected to the input end of the signal processing unit.

[0007] The thermoelectric component is used to output a first voltage signal to the signal processing unit through the second end when there is a temperature difference between the first end and the second end.

[0008] The signal processing unit is configured to generate a temperature adjustment signal based on the first voltage signal, and to perform temperature compensation on the sensor according to the temperature adjustment signal.

[0009] Secondly, embodiments of this application provide a temperature compensation method applied to the electronic device described in the first aspect, the temperature compensation method comprising:

[0010] When there is a temperature difference between the first and second ends of the thermoelectric component, the first voltage signal output through the second end is obtained;

[0011] A temperature adjustment signal is generated based on the first voltage signal, and the sensor is temperature compensated according to the temperature adjustment signal.

[0012] Thirdly, embodiments of this application provide a readable storage medium storing a program or instructions that, when executed by a processor, implement the steps of the temperature compensation method as described in the second aspect.

[0013] Fourthly, embodiments of this application provide a chip, the chip including a processor and a communication interface, the communication interface being coupled to the processor, the processor being used to run programs or instructions to implement the temperature compensation method as described in the second aspect.

[0014] Fifthly, embodiments of this application provide a computer program product stored in a storage medium, which is executed by at least one processor to implement the temperature compensation method as described in the second aspect.

[0015] In this embodiment, the first end of the thermoelectric component is in contact with the sensor, and the second end is connected to the heat dissipation area of ​​the electronic device. Thus, when there is a temperature difference between the first end and the second end, the first voltage signal value corresponding to the temperature difference can be accurately obtained through the second end. Then, the signal processing unit can generate a temperature adjustment signal based on the first voltage signal to achieve temperature compensation of the sensor based on the temperature adjustment signal. Compared with the operation of using the temperature detected by other devices such as the motherboard for software algorithm compensation in the prior art, the problem of miscompensation or inaccurate compensation can be avoided. Attached Figure Description

[0016] Figure 1 A schematic diagram of the composition structure of an electronic device provided in an embodiment of this application;

[0017] Figure 2 A schematic diagram of the composition structure of a thermoelectric component provided in an embodiment of this application;

[0018] Figure 3 A top view schematic diagram of a plated electrode for an infrared emitting lamp provided in an embodiment of this application;

[0019] Figure 4 A schematic diagram of the composition structure of another thermoelectric component provided in an embodiment of this application;

[0020] Figure 5 A schematic diagram illustrating the composition of another thermoelectric component provided in an embodiment of this application;

[0021] Figure 6 This is a functional implementation block diagram of an electronic device provided in an embodiment of this application;

[0022] Figure 7 This is a functional implementation block diagram of another electronic device provided in the embodiments of this application;

[0023] Figure 8 This is a functional implementation block diagram of another electronic device provided in an embodiment of this application;

[0024] Figure 9 A schematic diagram illustrating the composition of another electronic device provided in an embodiment of this application;

[0025] Figure 10 A schematic diagram illustrating the composition of another electronic device provided in this application embodiment;

[0026] Figure 11 This is a functional implementation block diagram of another electronic device provided in an embodiment of this application;

[0027] Figure 12 A flowchart illustrating the steps of a temperature compensation method according to an embodiment of this application;

[0028] Figure 13 A schematic diagram of the structure of an electronic device to implement the embodiments of this application;

[0029] Figure 14 A schematic diagram of the hardware structure of another electronic device to implement an embodiment of this application. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0031] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described in the embodiments of this application, and the objects distinguished by "first," "second," etc., are generally of the same class, without limiting the number of objects; for example, the first object can be one or at least two. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0032] The image processing method provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0033] Figure 1 This is a schematic diagram of the composition structure of an electronic device provided in an embodiment of this application, as shown below. Figure 1 As shown, the electronic device 10 includes: a sensor 101, a thermoelectric component 102, and a signal processing unit 103; a first end of the thermoelectric component 102 is in contact with the sensor 101; a second end of the thermoelectric component 102 is connected to the heat dissipation area of ​​the electronic device 10; and the second end of the thermoelectric component 102 is also connected to the input end of the signal processing unit 103.

[0034] The thermoelectric component 102 is used to output a first voltage signal to the signal processing unit 103 through the second end when there is a temperature difference between the first end and the second end.

[0035] The signal processing unit 103 is used to generate a temperature adjustment signal based on the first voltage signal, and to perform temperature compensation on the sensor 101 according to the temperature adjustment signal.

[0036] In this embodiment, sensor 101 may be a sensor without temperature detection function; for example, sensor 101 may be an infrared sensor 101. 、 Sensors in mobile phones include Synthetic Aperture Radar (SAR) and gyroscopes. The performance of infrared sensor 101, SAR, and gyroscope is greatly affected by temperature changes. For example, the noise floor value of infrared sensor 101 decreases as the temperature rises and increases as the temperature falls, leading to incorrect interactive experiences when the phone's screen is on or off.

[0037] It is understandable that the heat dissipation area of ​​the electronic device 10 can be a heat dissipation panel installed on the electronic device 10, and the temperature of the heat dissipation area can be a constant room temperature, such as 25 degrees Celsius; the heat dissipation area can also be other panels or frames on the electronic device 10 that maintain a constant temperature.

[0038] The thermoelectric component 102 in this application embodiment can be a circuit with Seebeck effect. The circuit includes multiple semiconductors of different materials. When there is a temperature difference between the first end and the second end of the thermoelectric component 102, the charge carriers at the first end move to the second end through the semiconductors of different materials to generate an electromotive force.

[0039] Understandably, the Seebeck effect works as follows:

[0040] The Seebeck effect is a phenomenon where electrons or holes in a heated object accumulate charge in the lower temperature region as they move with a temperature gradient from a high-temperature region to a low-temperature region. Because different materials transfer different amounts of charge, a thermoelectric potential V is generated at the high-temperature and low-temperature regions.

[0041] In this embodiment, the first end of the thermoelectric component 102 is in contact with the sensor 101, and the second end is connected to the heat dissipation area of ​​the electronic device 10. Thus, when there is a temperature difference between the first end and the second end, the first voltage signal value corresponding to the temperature difference can be accurately obtained through the second end. Then, the signal processing unit 103 can generate a temperature adjustment signal based on the first voltage signal to achieve temperature compensation of the sensor 101 based on the temperature adjustment signal. Compared with the operation of using the temperature detected by other devices such as the motherboard for software algorithm compensation in the prior art, the problem of miscompensation or inaccurate compensation can be avoided.

[0042] Optionally, in some embodiments, Figure 2 This is a schematic diagram of the composition structure of a thermoelectric component provided in an embodiment of this application, as shown below. Figure 2 As shown, the thermoelectric assembly 102 includes a P-type semiconductor 1021 and an N-type semiconductor 1022; the P-type semiconductor 1021 and the N-type semiconductor 1022 are arranged at intervals between each other;

[0043] The first end includes a first high-energy-level end of the P-type semiconductor device 1021 and a second high-energy-level end of the N-type semiconductor device 1022. The first high-energy-level end and the second high-energy-level end are in contact with the sensor 101, and the first high-energy-level end and the second high-energy-level end are electrically connected.

[0044] The second terminal includes a first low-energy terminal of the P-type semiconductor device 1021 and a second low-energy terminal of the N-type semiconductor device 1022. The first low-energy terminal and the second low-energy terminal are respectively connected to the heat dissipation area 104, and the first low-energy terminal and the second low-energy terminal are also respectively connected to the signal processing unit 103.

[0045] In this embodiment, the P-type semiconductor device 1021 and the N-type semiconductor device 1022 are arranged at a certain distance. The first high-energy-level end and the second high-energy-level end can respectively represent the high-temperature ends of the P-type semiconductor device 1021 and the N-type semiconductor device 1022, and the first low-energy-level end and the second low-energy-level end can respectively represent the low-temperature ends of the P-type semiconductor device 1021 and the N-type semiconductor device 1022.

[0046] The first high-energy-level terminal and the second high-energy-level terminal are in contact with the sensor 101. The first low-energy-level terminal and the second low-energy-level terminal are respectively connected to the heat dissipation area 104. The first low-energy-level terminal and the second low-energy-level terminal are also respectively connected to the signal processing unit 103. For example, the connection between the first high-energy-level terminal and the second high-energy-level terminal and other components or areas can be electrical, and the first high-energy-level terminal and the second high-energy-level terminal are electrically connected. This is only an example, and the embodiments of this application do not limit this.

[0047] like Figure 2 As shown, due to the different materials of the P-type semiconductor 1021 and the N-type semiconductor 1022, when there is a temperature difference between the sensor 101 and the heat dissipation area 104, the amount of charge transfer in the P-type semiconductor 1021 and the N-type semiconductor 1022 is different, resulting in charge accumulation at the first low-energy level and the second low-energy level, thereby generating a thermoelectric potential V between the first low-energy level and the second low-energy level. See formula (1):

[0048] V = S pn (T1-T2) (1)

[0049] Among them, S pn S represents the difference in Seebeck coefficients between the two materials of P-type semiconductor 1021 and N-type semiconductor 1022. pn It is a constant value, T1-T2 represents the temperature difference between the first and second ends of the thermoelectric component 102. Among them, T1 represents the temperature on the sensor 101 side, and T2 represents the temperature of the heat dissipation area 104.

[0050] From formula (1), it can be seen that the thermoelectric potential V is directly proportional to the temperature difference (T1-T2), and S pnSince it is known, the temperature difference (T1-T2) can be characterized by the thermoelectric electromotive force V. Furthermore, when the temperature T2 is constant, the temperature T1 can be determined based on the thermoelectric electromotive force V and the temperature T2, and further, the temperature value of sensor 101 can be determined.

[0051] In this embodiment, the sensor 101 is contacted via a first high-energy-level terminal and a second high-energy-level terminal, which are electrically connected. The first low-energy-level terminal and the second low-energy-level terminal are respectively connected to the heat dissipation area 104, and are also respectively connected to the signal processing unit 103. Thus, when a temperature difference exists between the sensor 101 and the heat dissipation area 104, holes in the P-type semiconductor 1021 flow from the first high-energy-level terminal to the first low-energy-level terminal, and electrons in the N-type semiconductor 1022 flow from the second high-energy-level terminal to the second low-energy-level terminal. Therefore, a first voltage signal value corresponding to the temperature difference can be detected between the first low-energy-level terminal and the second low-energy-level terminal, and this first voltage signal value can be output to the signal processing unit 103.

[0052] Alternatively, in some embodiments, see Figure 2 The first end further includes a first electrode 1023, and the second end includes a second electrode 1024 and a third electrode 1025 that are not connected to each other;

[0053] The first electrode 1023 is connected to the first high-energy-level end and the second high-energy-level end respectively, and the first electrode 1023 is also in contact with the sensor 101;

[0054] The second electrode 1024 is connected to the P-type semiconductor device 1021, and the third electrode 1025 is connected to the N-type semiconductor device 1022; the second electrode 1024 and the third electrode 1025 are also respectively connected to the signal processing unit 103.

[0055] A fourth electrode 1026 is provided on the heat dissipation area 104, and the fourth electrode 1026 is connected to the second electrode 1024 and the third electrode 1025 respectively.

[0056] In this embodiment, the first electrode 1023 can be directly connected to the sensor 101, for example, by electrical connection. Alternatively, the first electrode 1023 can be made to contact the sensor 101 in other ways. For example, an electrode can be plated on the bottom pad of the sensor and used as the first electrode 1023. This is only an example and this embodiment does not limit the scope of the invention.

[0057] Understandably, the first electrode 1023 is connected to the first high-energy-level terminal and the second high-energy-level terminal respectively, and the first electrode 1023 is also in contact with the sensor 101, so that the first high-energy-level terminal and the second high-energy-level terminal can sense the temperature at the sensor 101. The second electrode 1024 is connected to the P-type semiconductor device 1021, and the third electrode 1025 is connected to the N-type semiconductor device 1022. A fourth electrode 1026 is provided on the heat dissipation area 104, and the fourth electrode 1026 is connected to the second electrode 1024 and the third electrode 1025 respectively, so that the first low-energy-level terminal and the second low-energy-level terminal can sense the temperature at the heat dissipation area 104.

[0058] When a load resistor R is connected in series between the second electrode 1024 and the third electrode 1025, a current I flows through the load resistor R.

[0059] In this embodiment, the first electrode 1023 is connected to the first high-energy-level terminal and the second high-energy-level terminal respectively, and the first electrode 1023 is also in contact with the sensor 101; the second electrode 1024 is connected to the P-type semiconductor device 1021, and the third electrode 1025 is connected to the N-type semiconductor device 1022; the second electrode 1024 and the third electrode 1025 are also connected to the signal processing unit 103 respectively; a fourth electrode 1026 is provided on the heat dissipation area 104, and the fourth electrode 1026 is connected to the second electrode 1024 and the third electrode 1025 respectively. In this way, when there is a temperature difference between the sensor 101 and the heat dissipation area 104, the P-type semiconductor device 1021 can sense the temperature difference and generate charge accumulation at the first low energy level end and the second low energy level end. Thus, the first voltage signal value corresponding to the temperature difference can be detected between the second electrode 1024 and the third electrode 1025, and the first voltage signal value can be output to the signal processing unit 103 through the second electrode 1024 and the third electrode 1025.

[0060] Optionally, in some embodiments, the P-type semiconductor device 1021 and the N-type semiconductor device 1022 are arranged side by side, and a preset interval is provided between the P-type semiconductor device 1021 and the N-type semiconductor device 1022.

[0061] like Figure 2 As shown, the P-type semiconductor device 1021 and the N-type semiconductor device 1022 can have the same shape and size and be arranged side by side, so that the distance that charge carriers at similar positions in the P-type semiconductor device 1021 and the N-type semiconductor device 1022 travel to the low-energy end is the same. A preset interval is provided between the P-type semiconductor device 1021 and the N-type semiconductor device 1022. This preset interval is a distance that allows the charge carriers in the P-type semiconductor device 1021 and the N-type semiconductor device 1022 to move only within their respective parts and not diffuse into each other.

[0062] In this embodiment, P-type semiconductor device 1021 and N-type semiconductor device 1022 are arranged side by side with a preset interval between them. This ensures that the charge carriers accumulated at the low-energy end of the P-type semiconductor device 1021 and N-type semiconductor device 1022 are only affected by temperature. This makes the first voltage signal corresponding to the temperature difference more accurate.

[0063] Optionally, in some embodiments, the heat dissipation area 104 of the electronic device 10 includes a heat sink disposed on the motherboard bracket or a mid-frame disposed on the motherboard bracket. For example, when the electronic device 10 is a mobile phone terminal, the heat dissipation area 104 can also be the mid-frame of the mobile phone. This is only an example for illustration, and the embodiments of this application do not limit this.

[0064] In this embodiment of the application, the heat sink or middle frame on the motherboard bracket is used as the heat dissipation area 104 so that the temperature of the heat dissipation area 104 is closer to room temperature. Furthermore, the temperature of the sensor 101 can be compensated by the temperature difference between the sensor 101 and the heat dissipation area 104, which can achieve a better temperature compensation effect.

[0065] Optionally, in some embodiments, specifically in some embodiments of this application, the first electrode 1023 is disposed at a first position on the motherboard of the electronic device 10, and the sensor 101 is mounted on the motherboard; the distance between the first position and the mounting position of the sensor 101 is less than a preset distance.

[0066] In some possible implementations, the first location may be a region on the motherboard within a predetermined radius centered on sensor 101. For example, see... Figure 3 As shown, sensor 101 is an infrared sensor, including an infrared emitting lamp 1011 and a photodiode (PD) 1012. The first electrode 1023 is an electrode plated on the pad below the infrared emitting lamp 1011 of the infrared sensor 101. This ensures that the first electrode 1023 of the thermoelectric component 102 is sufficiently close to the infrared emitting lamp 1011, allowing for precise positioning of the first electrode 1023 at the heat-generating part of the sensor 101. This enables the thermoelectric component 102 to obtain an accurate temperature value of the infrared emitting lamp 1011, thus achieving more accurate temperature compensation for the infrared sensor 101. Furthermore, the fact that the first electrode 1023 is plated on the pad simplifies the circuit structure and reduces the need for excessive stacking space.

[0067] When the sensor 101 is an infrared sensor 101, the first end of the thermoelectric component 102 is in contact with the sensor 101, and the second end is connected to the heat dissipation area 104 of the electronic device 10. In this way, when there is a temperature difference between the first end and the second end, the first voltage signal value corresponding to the temperature difference can be accurately obtained through the second end. Then, the signal processing unit 103 can generate a temperature adjustment signal based on the first voltage signal to realize temperature compensation of the sensor 101 based on the temperature adjustment signal. Compared with the operation of using the temperature detected by other devices such as the motherboard for software algorithm compensation in the prior art, the problem of miscompensation or inaccurate compensation can be avoided. Furthermore, the problem of the electronic device 10 not turning on the screen can be avoided.

[0068] In this embodiment, since the first electrode 1023 is located at a first position on the motherboard of the electronic device 10, and the sensor 101 is mounted on the motherboard, the distance between the first position and the mounting position of the sensor 101 is less than a preset distance. Therefore, the temperature value of the sensor 101 can be accurately obtained through the thermoelectric component 102.

[0069] Optionally, in some embodiments, the second electrode 1024, the third electrode 1025, the P-type semiconductor device 1021, and the N-type semiconductor device 1022 are all disposed on the motherboard.

[0070] In one possible implementation, the second electrode 1024 and the third electrode 1025 may be disposed at a second position on the motherboard of the electronic device 10, which may be a position close to the edge of the motherboard.

[0071] Figure 4 A schematic diagram of the composition structure of another thermoelectric component provided in this application embodiment is shown below. Figure 4 As shown, sensor 101 is mounted on motherboard 105. First electrode 1023 is located at a first position on motherboard 105, the distance between the first position and the mounting position of sensor 101 being less than a preset distance. Second electrode 1024, third electrode 1025, P-type semiconductor device 1021, and N-type semiconductor device 1022 are all mounted on motherboard 105. Second electrode 1024 and third electrode 1025 are located at a second position on the edge of motherboard 105. A fourth electrode 1026 is provided on heat dissipation area 104, and the fourth electrode 1026 is connected to both the second electrode 1024 and the third electrode 1025. P-type semiconductor device 1021 and N-type semiconductor device 1022 are arranged side-by-side, with a preset interval between them.

[0072] In this embodiment, by placing the second electrode 1024, the third electrode 1025, the P-type semiconductor device 1021, and the N-type semiconductor device 1022 all on the motherboard, the circuit structure can be simplified and does not require excessive stacking space.

[0073] Optionally, in some embodiments, a flexible circuit board 1051 is provided on the motherboard 105; the second electrode 1024, the third electrode 1025, the P-type semiconductor device 1021 and the N-type semiconductor device 1022 are all disposed on the flexible circuit board 1051; the flexible circuit board 1051 is connected to the first electrode 1023 and the fourth electrode 1026 respectively.

[0074] Figure 5 A schematic diagram of the composition structure of another thermoelectric component provided in this application embodiment, and Figure 4 The difference is that a flexible printed circuit (FPC) 1051 is provided on the motherboard 105, and the second electrode 1024 and the third electrode 1025 are both plated on the flexible printed circuit 1051, and the P-type semiconductor device 1021 and the N-type semiconductor device 1022 are also provided on the flexible printed circuit 1051.

[0075] Optional, see Figure 5 The first electrode 1023 and the fourth electrode 1026 are board-to-board (BTB) connectors. The first board-to-board connector, i.e., the first electrode 1023, is used to connect the sensor 101 and the flexible circuit board 1051, and the second board-to-board connector, i.e., the fourth electrode 1026, is used to connect the flexible circuit board 1051 and the heat dissipation area 104.

[0076] In this embodiment, the second electrode 1024, the third electrode 1025, the P-type semiconductor device 1021, and the N-type semiconductor device 1022 are isolated from the motherboard 105 by the flexible circuit board 1051. This reduces the interference of other signals on the motherboard 105 on the voltage detection signal corresponding to the temperature difference. Therefore, the accuracy of temperature compensation for the sensor 101 can be improved, and a better temperature compensation effect can be obtained.

[0077] Optionally, in some embodiments, the signal processing unit 103 includes an amplification component 1031, an analog-to-digital conversion component 1032, and a signal processing component 1033 connected in sequence;

[0078] The amplification component 1031 is used to amplify the first voltage signal to obtain an amplified signal;

[0079] The analog-to-digital conversion component 1032 is used to perform analog-to-digital conversion on the amplified signal to obtain a second voltage signal;

[0080] The signal processing component 1033 is used to generate the temperature adjustment signal based on the second voltage signal to perform temperature compensation on the sensor 101.

[0081] In some embodiments of this application, see Figure 6 As shown, in Figure 4 or Figure 5 Based on this, it is known that the temperature difference between sensor 101 and heat dissipation area 104 can cause a potential difference between second electrode 1024 and third electrode 1025. This potential difference, i.e., the first voltage signal, is amplified by the amplification component 1031 of signal processing unit 103, such as a power amplifier (PA), to obtain an amplified power difference. Then, the amplified power difference is converted into a digital signal by analog-to-digital converter component 1032, such as an analog-to-digital converter (ADC), and the digital signal, i.e., the second voltage signal, is fed back to signal processing component 1033, such as an application processor (AP). Signal processing component 1033 processes the digital signal using a software algorithm to generate a temperature adjustment signal to compensate for the temperature of sensor 101. For example, the emission power of the infrared emitter 1011 of infrared sensor 101 is adjusted according to the temperature adjustment signal.

[0082] In this embodiment, the first voltage signal can be amplified and converted into a second voltage signal by the amplification component 1031 and the analog-to-digital conversion component 1032, so that the signal processing component 1033 can generate a temperature adjustment signal based on the second voltage signal to perform temperature compensation on the sensor 101.

[0083] Optionally, in some embodiments, the sensor 101 includes a temperature regulation input terminal; the output terminal of the signal processing unit 103 is connected to the temperature regulation input terminal.

[0084] The signal processing component 1033 is further configured to generate the temperature adjustment signal based on the second voltage signal and output the temperature adjustment signal to the temperature adjustment input terminal so that the sensor 101 can perform temperature compensation according to the temperature adjustment signal.

[0085] In this embodiment, since the sensor 101 includes a temperature regulation input terminal, the output terminal of the signal processing unit 103 is connected to the temperature regulation input terminal. The temperature regulation signal generated by the signal processing component 1033 based on the second voltage signal can be output to the temperature regulation input terminal of the sensor 101, so that the sensor 101 can easily perform temperature compensation according to the temperature regulation signal.

[0086] Optionally, the amplification component 1031, the analog-to-digital conversion component 1032, and the signal processing component 1033 are all integrated inside the sensor.

[0087] In some embodiments of this application, see Figure 7 As shown, and Figure 6 In contrast, the amplification component 1031, the analog-to-digital conversion component 1032, and the signal processing component 1033, such as the power amplifier (PA), ADC, and digital chip for signal processing, are all integrated inside the sensor 101. The temperature difference between the sensor 101 and the heat dissipation area 104 causes a potential difference between the second electrode 1024 and the third electrode 1025. This potential difference is directly fed back to the sensor 101, amplified by the PA integrated within the sensor 101, then converted into a digital signal by the ADC, and finally stored as data in a register within the digital chip. The digital value read from the register reflects the temperature difference, and a temperature adjustment signal is generated based on this value. Temperature compensation is then applied to the sensor 101 based on this temperature adjustment signal. For example, the emission power of the infrared emitting lamp 1011 is dynamically adjusted according to the temperature adjustment signal, thereby reducing the temperature drift of the infrared sensor 101.

[0088] As can be seen from the above embodiments, reference Figure 8 As shown, the process of generating a temperature difference between sensor 101 and heat dissipation area 104, and the process of temperature compensation for sensor 101, includes:

[0089] Step S201: A temperature difference ΔT is generated between the sensor 101 and the heat dissipation area 104;

[0090] Step S202: Holes and electrons flow are generated in the P-type semiconductor device 1021 and the N-type semiconductor device 1022, respectively;

[0091] Step S203: A voltage difference V is generated between the second electrode 1024 and the third electrode 1025 of the thermoelectric component 102 due to charge accumulation;

[0092] Step S204: The voltage difference V, i.e. the first voltage signal, is amplified by the amplification component 1031, and the amplified first voltage signal is converted into a digital signal, i.e. the second voltage signal, by the analog-to-digital conversion component 1032.

[0093] Step S205: Feed back the second voltage signal to the signal processing component 1033;

[0094] Step S206: The signal processing component 1033 generates a temperature adjustment signal based on the second voltage signal to achieve temperature compensation for the sensor 101.

[0095] Optionally, if the sensor 101 includes a temperature regulation input terminal, the output terminal of the signal processing unit 103 is connected to the temperature regulation input terminal. The temperature regulation signal generated by the signal processing component 1033 based on the second voltage signal can be output to the temperature regulation input terminal of the sensor 101, allowing the sensor 101 to easily perform temperature compensation based on the temperature regulation signal.

[0096] Optionally, if the amplification component 1031, analog-to-digital converter 1032, and signal processing component 1033 are all integrated inside the sensor, the potential difference is directly fed back to the sensor 101. The difference is amplified by the PA integrated within the sensor 101, then converted into a digital signal (the second voltage signal) by the ADC, and finally stored in the register of the digital chip. The digital value read from the register reflects the temperature difference, and a temperature adjustment signal is generated based on this value to compensate for the temperature of the sensor 101.

[0097] In this embodiment, by integrating the signal processing unit 103 inside the sensor 101, the signal processing efficiency of the signal processing unit 103 and the response speed of the sensor 101 can be improved. Therefore, the temperature compensation efficiency of the sensor 101 can be improved.

[0098] Optionally, in some embodiments, the electronic device 10 further includes a power supply component 106 and a switch component 107; the second terminals of the power supply component 106, the switch component 107, and the thermoelectric component 102 are connected in series to form a series circuit; the control terminal of the switch component 107 is connected to the output terminal of the signal processing component 1033;

[0099] The switching assembly 107 is used to connect the second end of the power supply assembly 106 and the thermoelectric assembly 102 under the control of the temperature regulation signal.

[0100] The power supply component 106 is used to provide a preset current to the second terminal of the thermoelectric component 102 when the power supply component 106 is connected to the second terminal of the thermoelectric component 102, so as to perform temperature compensation on the sensor 101; the current value of the preset current is determined according to the voltage value of the second voltage signal.

[0101] In some possible implementations, power supply component 106 may be a voltage source with adjustable output voltage or a current source with adjustable output current. Switching component 107 may be a switching transistor connected in series with power supply component 106.

[0102] In other possible implementations, the power supply assembly 106 may be a voltage source comprising multiple fixed output voltages or a current source comprising multiple fixed output currents. The switching assembly 107 comprises multiple switching transistors connected in series with each voltage source or current source. A voltage source or current source connected in series with a switching transistor forms a series branch, and multiple series branches may be connected in parallel to form a parallel branch. These parallel branches are then connected in series with the second terminal of the thermoelectric assembly 102 to form a series circuit.

[0103] In one possible implementation, the current value of the preset current is proportional to the voltage value of the second voltage signal.

[0104] In this embodiment, a cooling circuit can be constructed using the switching component 107, the power supply component 106, and the thermoelectric component 102. The principle of this circuit is the Peltier effect, which is as follows:

[0105] A thermocouple is made of N-type and P-type materials. Since charge carriers such as electrons or holes are in different energy levels in different materials, when the charge carriers move from a low energy level to a high energy level, they absorb energy from the outside; conversely, when they move from a high energy level to a low energy level, they release excess energy.

[0106] See Figure 9 As shown, the power supply assembly 106 and the switch assembly 107 are connected in series with the second electrode 1024 and the third electrode 1025. It can be understood that the P-type semiconductor 1021 and the N-type semiconductor 1022 are made of different materials, and the charge carriers are located at different energy levels in the P-type semiconductor 1021 and the N-type semiconductor 1022, i.e., the high-energy end and the low-energy end of the P-type semiconductor 1021 and the N-type semiconductor 1022, respectively. Therefore, holes in the P-type semiconductor 1021 and electrons in the N-type semiconductor 1022 both move from the high-energy end to the low-energy end, releasing energy during this movement, thereby achieving the purpose of cooling the sensor.

[0107] The definition of the released energy Q is given in formula (2).

[0108] Q=(π X -π Y )*I (2)

[0109] Where, π X and π Y The Peltier coefficients of P-type semiconductor device 1021 and N-type semiconductor device 1022, respectively, π X and π Y Since both values ​​are constant, the released energy Q is proportional to the current I in the series circuit. In this embodiment, the magnitude of the current I can be determined based on the actual temperature difference ΔT.

[0110] Optional, see Figure 10 As shown, the power supply component 106 can be connected in series with switch S2, and the voltmeter is connected in series with S1 and in parallel with the power supply component 106 and switch S2. When the first voltage signal corresponding to the sensor 101 and the heat dissipation area 104, as measured based on the Seebeck effect, is greater than a certain threshold, the temperature difference between the sensor 101 and the heat dissipation area 104 can be calculated based on the magnitude of the first voltage signal, and the current value to be applied at this time can be calculated based on the Peltier effect. Switch S2 is then turned on, and the sensor 101 is cooled to compensate for its temperature while the circuit is conducting. Optionally, S1 can be turned on, and the actual current value flowing through the circuit can be determined by the voltage value measured by the voltmeter and the load resistance value of the cooling circuit.

[0111] In the embodiments of this application, Figure 11 This refers to the process of generating a temperature difference between sensor 101 and heat dissipation area 104, and the process of temperature compensation for sensor 101. Figure 8 In contrast, the temperature compensation step for the sensor is different in that it does not include step S206, but includes step S207: the signal processing component 1033 or the sensor 101 compares the digital signal, i.e. the second voltage signal, with a preset threshold. When the second voltage signal is greater than the preset threshold, the output voltage value of the power supply component 106 with adjustable output voltage is calculated.

[0112] Step S208: Under the control of the temperature regulation signal output by the signal processing component 1033, the switch component 107 is closed to cool down the sensor 101.

[0113] In this embodiment, the connection between the power supply component and the second terminal of the thermoelectric component is turned on by the switching component under the control of the temperature regulation signal; when the power supply component and the second terminal of the thermoelectric component are turned on, the power supply component provides a preset current to the second terminal of the thermoelectric component, which can cool the sensor to compensate for the temperature of the sensor.

[0114] Based on the above embodiments, this application provides a temperature compensation method applied to the electronic device 10 described above, such as... Figure 12 As shown, the temperature compensation method includes:

[0115] Step S301: Obtain the first voltage signal output by the second end of the thermoelectric component 102 when there is a temperature difference between the first end and the second end.

[0116] In this embodiment of the application, the temperature difference can be the difference ΔT between the temperature T1 at the first end and the temperature T2 at the second end, i.e., T1-T2, where T1 is greater than or equal to T2.

[0117] It is understandable that T1 is a temperature variable that changes in real time, while T2 is a relatively constant temperature. Therefore, the temperature difference also changes in real time, and consequently, the first voltage signal generated based on the temperature difference is also an analog quantity that changes in real time.

[0118] Step S302: Generate a temperature adjustment signal based on the first voltage signal, and perform temperature compensation on the sensor 101 according to the temperature adjustment signal.

[0119] It is understood that the temperature regulation signal can be a sequence of digital signals 0 or 1 used to control the switching component 107 to be turned on or off, or it can be a digital signal used to adjust the parameters of the sensor 101.

[0120] In some possible implementations, the signal processing unit 103 generates a temperature adjustment signal based on the first voltage signal to perform temperature compensation on the sensor 101. Specifically, the signal processing unit 103 may amplify and perform analog-to-digital conversion on the first voltage signal to obtain a digital signal, and then process the digital signal using a preset algorithm to generate the temperature adjustment signal.

[0121] In this embodiment, when there is a temperature difference between the first and second ends of the thermoelectric component 511, a first voltage signal is output through the second end; a temperature adjustment signal is generated based on the first voltage signal, and temperature compensation is performed on the sensor 505 according to the temperature adjustment signal. Compared with the operation of using software algorithm compensation based on the temperature detected by other devices such as the motherboard in the prior art, the problem of miscompensation or inaccurate compensation can be avoided.

[0122] Optionally, step S302 may include the following steps:

[0123] Step S3021: Amplify the first voltage signal to obtain an amplified signal.

[0124] In this embodiment, the amplification factor of the first voltage signal is not specifically limited. The amplitude of the amplified signal obtained after the amplification component 1031 of the signal processing unit 103 amplifies the first voltage signal only needs to be within the input voltage range requirement of the analog-to-digital conversion component 1032 of the signal processing unit 103.

[0125] Step S3022: Perform analog-to-digital conversion on the amplified signal to obtain a second voltage signal.

[0126] In this embodiment of the application, the accuracy of the analog-to-digital conversion component 1032 is not specifically limited; the accuracy of the analog-to-digital conversion component 1032 only needs to match the accuracy of the sensor 101.

[0127] Step S3023: Generate a temperature adjustment signal based on the second voltage signal, and perform temperature compensation on the sensor 101 according to the temperature adjustment signal.

[0128] In some embodiments, the signal processing unit 103 generates a temperature adjustment signal based on the second voltage signal to compensate the temperature of the sensor 101. This can be achieved by the signal processing component 1033 in the signal processing unit 103 processing the second voltage signal through a preset algorithm and outputting a temperature adjustment signal. The temperature adjustment signal can then be used to control the sensor 101 to adjust its own parameters to compensate for the temperature of the sensor 101. Alternatively, the temperature adjustment signal can be used to control the operation of other circuits in the electronic device 10 to compensate the temperature of the sensor 101.

[0129] In this embodiment of the application, the first voltage signal is amplified to obtain an amplified signal; the amplified signal is converted from analog to digital to obtain a second voltage signal; a temperature adjustment signal is generated based on the second voltage signal, and the sensor 101 is temperature compensated according to the temperature adjustment signal, so that the sensor 101 can be accurately temperature compensated.

[0130] Optionally, step S3023 may include the following steps:

[0131] Step S3023a: The temperature adjustment signal is transmitted to the temperature adjustment input terminal of the sensor 101 so that the sensor 101 can perform temperature compensation according to the temperature adjustment signal.

[0132] In this embodiment of the application, the sensor 101 can be a device that achieves its own temperature compensation by adjusting its own parameters. For example, the infrared sensor 101 can perform temperature compensation by adjusting the infrared emission power of the infrared emitting lamp 1011.

[0133] In this embodiment, the temperature adjustment signal is generated by the signal processing unit 103 based on the second voltage signal, and the temperature adjustment signal is transmitted to the temperature adjustment input terminal of the sensor 101, so that the sensor 101 can perform accurate temperature compensation.

[0134] Optionally, step S3023 may include the following steps:

[0135] Step S3023b: According to the temperature adjustment signal, the connection between the power supply component 106 and the second terminal of the thermoelectric component 102 is turned on, so that when the power supply component 106 is turned on to the second terminal of the thermoelectric component 102, it provides a preset current to the second terminal of the thermoelectric component 102 to perform temperature compensation on the sensor 101; the current value of the preset current is determined according to the voltage value of the second voltage signal.

[0136] It is understood that when the power supply assembly 106 is a variable power supply, the switching assembly 107 may include a switching transistor, and correspondingly, the temperature regulation signal is a high or low level that controls the switching transistor to turn on or off. When the power supply assembly 106 is multiple fixed power supplies, the switching assembly 107 may include a switching transistor connected in series with each fixed power supply, and correspondingly, the temperature regulation signal is a high or low level that controls the multiple switching transistors to turn on or off.

[0137] In some possible implementations, the switching assembly 107, in response to the input temperature regulation signal, connects the power supply assembly 106 to the second terminal of the thermoelectric assembly 102.

[0138] In this embodiment, when the temperature adjustment signal is high, the switch assembly 107 responds to the high level and connects the power supply assembly 106 to the second terminal of the thermoelectric assembly 102. When the temperature adjustment signal is low, the switch assembly 107 responds to the low level and disconnects the connection between the power supply assembly 106 and the second terminal of the thermoelectric assembly 102.

[0139] In some possible implementations, the energy to be released can be determined based on the voltage value of the first voltage signal, and then the preset current to be provided by the power supply component 106 can be determined according to the energy to be released by formula (2), and a temperature regulation signal can be generated according to the preset current to be provided.

[0140] In this embodiment, according to the temperature adjustment signal, the switch assembly 107 is controlled to connect the power supply assembly 106 and the second terminal of the thermoelectric assembly 102. With the power supply assembly 106 connected to the second terminal of the thermoelectric assembly 102, a preset current is provided to the thermoelectric assembly 102, causing the structure composed of the thermoelectric assembly 102, switch assembly 107, and power supply assembly 106 to release energy corresponding to the preset current based on the Peltier effect, thereby achieving temperature compensation of the sensor 101 according to the temperature adjustment signal.

[0141] Optionally, such as Figure 13As shown, this application embodiment also provides an electronic device 40, including a processor 401 and a memory 402. The memory 402 stores a program or instructions that can run on the processor 401. When the program or instructions are executed by the processor 401, they implement the various steps of the temperature compensation method embodiment described above and can achieve the same technical effect. To avoid repetition, they will not be described again here.

[0142] It should be noted that the electronic device 40 in this application embodiment includes the mobile electronic device and non-mobile electronic device described above.

[0143] Figure 14 This is a schematic diagram of the hardware structure of another electronic device according to an embodiment of this application, such as... Figure 14 As shown, the electronic device 50 includes, but is not limited to, components such as: radio frequency unit 501, network module 502, audio output unit 503, input unit 504, sensor 505, display unit 506, user input unit 507, interface unit 508, memory 509, and processor 510.

[0144] Those skilled in the art will understand that the electronic device 50 may also include a power supply (such as a battery) for supplying power to various components. The power supply may be logically connected to the processor 510 through a power management system, thereby enabling functions such as managing charging, discharging, and power consumption through the power management system. Figure 14 The electronic device structure shown does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than shown, or combine certain components, or have different component arrangements, which will not be elaborated here.

[0145] Of course, if sensor 505 is a temperature-sensitive sensor and no temperature detection circuit is provided for sensor 505, electronic device 50 may also include thermoelectric component 511 and signal processing unit 512. The first end of thermoelectric component 511 is connected to sensor 505; the second end of thermoelectric component 511 is connected to heat dissipation area of ​​electronic device 50; the signal output end of thermoelectric component 511 is connected to input end of signal processing unit 512.

[0146] Optionally, in some embodiments, the signal processing unit 512 is used to acquire a first voltage signal output through the second terminal when there is a temperature difference between the first terminal and the second terminal of the thermoelectric component 511; generate a temperature adjustment signal based on the first voltage signal; and perform temperature compensation on the sensor 505 according to the temperature adjustment signal.

[0147] In this embodiment, when there is a temperature difference between the first and second ends of the thermoelectric component 511, a first voltage signal is output through the second end; a temperature adjustment signal is generated based on the first voltage signal, and temperature compensation is performed on the sensor 505 according to the temperature adjustment signal. Compared with the operation of using software algorithm compensation based on the temperature detected by other devices such as the motherboard in the prior art, the problem of miscompensation or inaccurate compensation can be avoided.

[0148] Optionally, in some embodiments, the signal processing unit 512 is further configured to amplify the first voltage signal to obtain an amplified signal; perform analog-to-digital conversion on the amplified signal to obtain a second voltage signal; generate a temperature adjustment signal based on the second voltage signal; and perform temperature compensation on the sensor 505 according to the temperature adjustment signal.

[0149] In this embodiment of the application, the first voltage signal is amplified to obtain an amplified signal; the amplified signal is converted from analog to digital to obtain a second voltage signal; a temperature adjustment signal is generated based on the second voltage signal, and the sensor 101 is temperature compensated according to the temperature adjustment signal, so that the sensor 101 can be accurately temperature compensated.

[0150] Optional, see Figure 14 As shown, the signal processing unit 512 is also used to transmit the temperature adjustment signal to the temperature adjustment input terminal of the sensor 505 so that the sensor 505 can perform temperature compensation according to the temperature adjustment signal.

[0151] In this embodiment, the temperature adjustment signal is generated by the signal processing unit 103 based on the second voltage signal, and the temperature adjustment signal is transmitted to the temperature adjustment input terminal of the sensor 101, so that the sensor 101 can perform accurate temperature compensation.

[0152] Optionally, the signal processing unit 512 is further configured to, according to the temperature adjustment signal, connect the power supply component 106 to the second terminal of the thermoelectric component 102, so that when the power supply component 106 is connected to the second terminal of the thermoelectric component 102, it provides a preset current to the second terminal of the thermoelectric component 102 to perform temperature compensation on the sensor 101; the current value of the preset current is determined according to the voltage value of the second voltage signal.

[0153] In this embodiment, according to the temperature adjustment signal, the switch assembly 107 is controlled to connect the power supply assembly 106 and the second terminal of the thermoelectric assembly 102. With the power supply assembly 106 connected to the second terminal of the thermoelectric assembly 102, a preset current is provided to the thermoelectric assembly 102, causing the structure composed of the thermoelectric assembly 102, switch assembly 107, and power supply assembly 106 to release energy corresponding to the preset current based on the Peltier effect, thereby achieving temperature compensation of the sensor 101 according to the temperature adjustment signal.

[0154] It should be understood that, in this embodiment, the input unit 504 may include a graphics processing unit (GPU) 504' and a microphone 504'. The GPU 504' processes image data of still images or videos obtained by an image capture device (such as a camera) in video capture mode or image capture mode. The display unit 506 may include a display panel 506', which may be configured in the form of a liquid crystal display, an organic light-emitting diode, etc. The user input unit 507 includes at least one of a touch panel 507' and other input devices 507'. The touch panel 507' is also called a touch screen. The touch panel 507' may include two parts: a touch detection device and a touch controller. Other input devices 507' may include, but are not limited to, a physical keyboard, function keys (such as volume control buttons, power buttons, etc.), a trackball, a mouse, and a joystick, which will not be described in detail here.

[0155] The memory 509 can be used to store software programs and various data. Furthermore, the memory 509 may include volatile memory or non-volatile memory, or both. The non-volatile memory may be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous linked dynamic random access memory (Synchlink DRAM, SLDRAM), and direct memory bus RAM (DRRAM). The memory 509 in this embodiment includes, but is not limited to, these and any other suitable types of memory.

[0156] Processor 510 may include one or at least two processing units; optionally, processor 510 integrates an application processor and a modem processor, wherein the application processor mainly handles operations involving the operating system, user interface, and applications, and the modem processor mainly handles wireless communication signals, such as a baseband processor. It is understood that the aforementioned modem processor may also not be integrated into processor 510.

[0157] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0158] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a computer software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0159] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An electronic device, characterized in that, The electronic device includes: a sensor, a thermoelectric component, and a signal processing unit; The first end of the thermoelectric component is in contact with the sensor; the second end of the thermoelectric component is connected to the heat dissipation area of ​​the electronic device; the second end of the thermoelectric component is also connected to the input end of the signal processing unit. The thermoelectric component is used to output a first voltage signal to the signal processing unit through the second end when there is a temperature difference between the first end and the second end. The signal processing unit is configured to generate a temperature adjustment signal based on the first voltage signal, and to perform temperature compensation on the sensor according to the temperature adjustment signal. The thermoelectric component includes a P-type semiconductor element and an N-type semiconductor element; the P-type semiconductor element and the N-type semiconductor element are arranged at intervals between each other; The first end includes a first high-energy-level end of the P-type semiconductor device and a second high-energy-level end of the N-type semiconductor device. The first high-energy-level end and the second high-energy-level end are in contact with the sensor, and the first high-energy-level end and the second high-energy-level end are electrically connected. The first end further includes a first electrode, and the second end includes a second electrode and a third electrode that are not connected to each other; The first electrode is connected to the first high-energy-level terminal and the second high-energy-level terminal respectively, and the first electrode is also in contact with the sensor. The second electrode is connected to the P-type semiconductor device, and the third electrode is connected to the N-type semiconductor device; the second electrode and the third electrode are also respectively connected to the signal processing unit. A fourth electrode is provided on the heat dissipation area, and the fourth electrode is connected to the second electrode and the third electrode respectively.

2. The electronic device according to claim 1, characterized in that, The second terminal includes a first low-energy terminal of the P-type semiconductor device and a second low-energy terminal of the N-type semiconductor device. The first low-energy terminal and the second low-energy terminal are respectively connected to the heat dissipation area, and the first low-energy terminal and the second low-energy terminal are also respectively connected to the signal processing unit.

3. The electronic device according to claim 2, characterized in that, The P-type semiconductor device and the N-type semiconductor device are arranged side by side, and a preset interval is provided between the P-type semiconductor device and the N-type semiconductor device.

4. The electronic device according to claim 1, characterized in that, The heat dissipation area of ​​the electronic device includes: a heat sink mounted on the motherboard bracket or a mid-frame mounted on the motherboard bracket.

5. The electronic device according to claim 1, characterized in that, The first electrode is disposed at a first position on the motherboard of the electronic device, and the sensor is mounted on the motherboard; the distance between the first position and the mounting position of the sensor is less than a preset distance.

6. The electronic device according to claim 5, characterized in that, The second electrode, the third electrode, the P-type semiconductor device, and the N-type semiconductor device are all disposed on the motherboard.

7. The electronic device according to claim 5, characterized in that, A flexible circuit board is provided on the motherboard; the second electrode, the third electrode, the P-type semiconductor device and the N-type semiconductor device are all disposed on the flexible circuit board; the flexible circuit board is connected to the first electrode and the fourth electrode respectively.

8. The electronic device according to any one of claims 1 to 7, characterized in that, The signal processing unit includes an amplification component, an analog-to-digital conversion component, and a signal processing component connected in sequence. The amplification component is used to amplify the first voltage signal to obtain an amplified signal; The analog-to-digital converter component is used to perform analog-to-digital conversion on the amplified signal to obtain a second voltage signal; The signal processing component is used to generate the temperature adjustment signal based on the second voltage signal to perform temperature compensation on the sensor.

9. The electronic device according to claim 8, characterized in that, The sensor includes a temperature regulation input terminal; the output terminal of the signal processing unit is connected to the temperature regulation input terminal. The signal processing component is further configured to generate the temperature adjustment signal based on the second voltage signal, and output the temperature adjustment signal to the temperature adjustment input terminal so that the sensor can perform temperature compensation according to the temperature adjustment signal.

10. The electronic device according to claim 8, characterized in that, The electronic device further includes a power supply component and a switching component; the second terminals of the power supply component, the switching component, and the thermoelectric component are connected in series to form a series circuit; the control terminal of the switching component is connected to the output terminal of the signal processing component; The switching assembly is used to connect the second terminal of the power supply assembly and the thermoelectric assembly under the control of the temperature regulation signal. The power supply component is used to provide a preset current to the second terminal of the thermoelectric component when the power supply component and the second terminal of the thermoelectric component are connected, so as to perform temperature compensation on the sensor; the current value of the preset current is determined according to the voltage value of the second voltage signal.

11. A temperature compensation method, characterized in that, The temperature compensation method, applied to an electronic device as described in any one of claims 1 to 10, comprises: When there is a temperature difference between the first and second ends of the thermoelectric component, the first voltage signal output through the second end is obtained; A temperature adjustment signal is generated based on the first voltage signal, and the sensor is temperature compensated according to the temperature adjustment signal.

12. The temperature compensation method according to claim 11, characterized in that, The step of generating a temperature adjustment signal based on the first voltage signal and performing temperature compensation on the sensor according to the temperature adjustment signal includes: The first voltage signal is amplified to obtain an amplified signal; The amplified signal is converted from analog to digital to obtain a second voltage signal; A temperature adjustment signal is generated based on the second voltage signal, and the sensor is temperature compensated according to the temperature adjustment signal.

13. The temperature compensation method according to claim 12, characterized in that, The step of temperature compensation for the sensor based on the temperature adjustment signal includes: The temperature adjustment signal is transmitted to the temperature adjustment input terminal of the sensor so that the sensor can perform temperature compensation based on the temperature adjustment signal.

14. The temperature compensation method according to claim 12, characterized in that, The step of temperature compensation for the sensor based on the temperature adjustment signal includes: According to the temperature adjustment signal, the connection between the power supply component and the second terminal of the thermoelectric component is turned on, so that when the power supply component is turned on to the second terminal of the thermoelectric component, it provides a preset current to the second terminal of the thermoelectric component to perform temperature compensation for the sensor; the current value of the preset current is determined according to the voltage value of the second voltage signal.

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