A thin film mask

Abstract

The application provides a film mask, comprising: a first layer and a second layer; the first layer and the second layer are arranged in a stack; the second layer comprises an adhesive film; the first layer has an absorption rate of greater than or equal to 20% under irradiation of an ultraviolet light source and has a thickness of less than or equal to 200 microns, wherein the wavelength of the ultraviolet light source is 355+ / -15 nm; or the first layer has an absorption rate of greater than or equal to 20% under irradiation of a green light source and has a thickness of less than or equal to 200 microns, wherein the wavelength of the green light source is 530+ / -15 nm; or the first layer has an absorption rate of greater than or equal to 20% under irradiation of an infrared light source and has a thickness of less than or equal to 200 microns, wherein the wavelength of the infrared light source is 1045+ / -20 nm; and the first layer has a visible light transmittance of less than or equal to 90%. The film mask provided by the application utilizes optical characteristics, and compared with common film masks, the power required by the light source is lower, thereby saving cost. Furthermore, the low-power light source is used to form a patterned content, the adhesive film is low in cost, and a complex process is not required to realize the patterned processing, thereby realizing cost reduction and benefit increase.

Description

TECHNICAL FIELD

[0001] The present application relates to a thin film mask. BACKGROUND

[0002] The method of using thin film mask to make area pattern is widely used in the fields of semiconductor, display panel, touch panel, solar cell, circuit mask, precision printing and other high-tech fields. The commonly used method is to use photoresist development or patterned metal mask. The photoresist process is complex, the material cost is high, and subsequent chemical cleaning is required, which increases the cost of environmental protection requirements, and the metal mask, especially when applied to the solar cell with concave-convex surface, cannot be attached to the surface of the solar cell, which will result in low accuracy of the patterned content. In addition, regular maintenance and cleaning are required during use, which increases the maintenance cost. SUMMARY

[0003] One object of the present application is to provide a thin film mask, comprising: a first layer and a second layer; the first layer and the second layer are arranged in a stack; the second layer comprises an adhesive film;

[0004] The absorption rate of the first layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥20%, wherein the wavelength of the ultraviolet light source is 355±15nm; or the absorption rate of the first layer under the irradiation of a green light source and with a thickness of 200um or less is ≥20%, wherein the wavelength of the green light source is 530±15nm; or the absorption rate of the first layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥20%, wherein the wavelength of the infrared light source is 1045±20nm.

[0005] The visible light transmittance of the first layer is ≤90%.

[0006] Further, the absorption rate of the first layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥50%, preferably, the absorption rate of the first layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥80%;

[0007] Or, the absorption rate of the first layer under the irradiation of a green light source and with a thickness of 200um or less is ≥50%, preferably, the absorption rate of the first layer under the irradiation of a green light source and with a thickness of 200um or less is ≥80%;

[0008] Or, the absorption rate of the first layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥50%, preferably, the absorption rate of the first layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥80%.

[0009] Further, the first layer comprises a polymer film;

[0010] The polymer film material is a polymer, including but not limited to: one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), biaxially oriented polypropylene (BOPP).

[0011] Further, the thickness of the first layer is 1-100um, preferably the thickness is 5-40um, further preferably the thickness is 10-25um.

[0012] Further, the absorption rate of the second layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥5%, wherein the wavelength of the ultraviolet light source is 355±15nm; or, the absorption rate of the second layer under the irradiation of a green light source and with a thickness of 200um or less is ≥5%, wherein the wavelength of the green light source is 530±15nm; or, the absorption rate of the second layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥5%, wherein the wavelength of the infrared light source is 1045±20nm.

[0013] Further, the absorption rate of the second layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥50%, preferably the absorption rate of the second layer under the irradiation of an ultraviolet light source and with a thickness of 200um or less is ≥80%;

[0014] Or, the absorption rate of the second layer under the irradiation of a green light source and with a thickness of 200um or less is ≥50%, preferably the absorption rate of the second layer under the irradiation of a green light source and with a thickness of 200um or less is ≥80%;

[0015] Or, the absorption rate of the second layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥50%, preferably the absorption rate of the second layer under the irradiation of an infrared light source and with a thickness of 200um or less is ≥80%.

[0016] Further, the thickness of the second layer is 1-30um, preferably the thickness is 2-15um, further preferably the thickness is 3-10um.

[0017] Further, the material of the adhesive film in the second layer comprises one or more of silica gel, acrylic glue, polyurethane, rubber, polyisobutylene.

[0018] Further, the peeling strength of the second layer at a first temperature is 1-50gf / cm, preferably the peeling strength is 5-30gf / cm, further preferably the peeling strength is 6-15gf / cm;

[0019] The first temperature is 15-30°C, preferably, the first temperature is 20-30°C, further preferably, the first temperature is 20-25°C.

[0020] Further, the material of the adhesive film in the second layer comprises a one-way temperature-sensitive adhesive, the adhesion of the one-way temperature-sensitive adhesive exhibits irreversibility under different temperature conditions;

[0021] And the peel strength of the one-way temperature-sensitive adhesive decreases with the increase of temperature.

[0022] Further, the material of the adhesive film in the second layer comprises a one-way temperature-sensitive adhesive, the adhesion of the one-way temperature-sensitive adhesive exhibits irreversibility under different temperature conditions;

[0023] And the peel strength of the one-way temperature-sensitive adhesive decreases with the increase of temperature.

[0024] The second temperature is 70°C, preferably, the second temperature is 70-150°C, further preferably, the second temperature is 90-150°C.

[0025] Further, the peel strength is 5-30 gf / cm, and the temperature is 50-140°C.

[0026] Further, the material of the adhesive film in the second layer comprises a two-way temperature-sensitive adhesive; the adhesion of the two-way temperature-sensitive adhesive exhibits reversibility under different temperature conditions;

[0027] And the peel strength of the two-way temperature-sensitive adhesive increases with the increase of temperature.

[0028] Further, the peel strength is 5-30 gf / cm, and the temperature is 50-140°C.

[0029] Further, the thickness of the film mask is 10-100 um, preferably, the thickness is 10-50 um.

[0030] Further, the film mask further comprises a third layer;

[0031] The third layer is arranged on the side of the second layer away from the first layer;

[0032] The third layer comprises a release film;

[0033] The release film is a high polymer, including but not limited to one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0034] Further, the third layer has a thickness of 1-100 um, preferably a thickness of 5-40 um, and further preferably a thickness of 10-25 um.

[0035] Another object of the present application is to provide a deposition process of a solar cell, wherein the thin film mask is used.

[0036] Further, the deposition process comprises a functional layer deposition process and / or a conductive layer deposition process.

[0037] The functional layer deposition comprises a dielectric layer deposition, and the conductive layer deposition comprises a transparent conductive layer deposition and / or a metal conductive layer deposition.

[0038] In summary, the present application provides a thin film mask, by setting specific optical properties, such as the limitation of the absorption rate and the visible light transmittance, for the first layer, so that the first layer is patterned by irradiation of some specific wavelength range of light source, such as ultraviolet laser, green laser or infrared laser, etc., and then the patterned thin film mask is adhered to the target object to be processed by using the adhesive film of the second layer, for subsequent area pattern making. It has the following characteristics:

[0039] Compared with photoresist development, the thin film mask provided by the present application uses optical properties, and compared with ordinary thin film, the required power of the light source is lower, which can save costs. Further, the patterned content is formed by a low-power light source, and the cost of the adhesive film is low, and there is no need to match a complex process to realize the patterning process, so that the cost is reduced and the efficiency is increased. In addition, compared with the metal mask, the thin film mask provided by the present application is pasted to the surface of the target object to be processed by the adhesive film, so that the thin film mask is well combined with the surface, and compared with the metal mask mode, it is not affected by the hollowed-out area, so that the patterned content is more accurate, and the quality is improved. BRIEF DESCRIPTION OF DRAWINGS

[0040] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:

[0041] Figure 1 FIG. 1 is a structural schematic diagram of a thin film mask of an embodiment of the present application.

[0042] Figure 2 FIG. 2 is a structural schematic diagram of a thin film mask of another embodiment of the present application.

[0043] Figure 3 FIG. 3 is a wavelength and absorption rate schematic diagram of a blue PET thin film material used in a high molecular film of a specific scene embodiment of the present application.

[0044] Figure 4 The wavelength and absorption rate diagram of the yellow PET film material used for the high polymer film of the specific scene embodiment 2 of the present application.

[0045] Figure 5 The wavelength and absorption rate diagram of the green PO film material used for the high polymer film of the specific scene embodiment 3 of the present application.

[0046] Figure 6 The electrode grid line manufacturing method diagram of the solar cell piece of the specific application embodiment 1 of the present application.

[0047] Figure 7 The electrode grid line manufacturing method diagram of the solar cell piece of the specific application embodiment 2 of the present application.

[0048] Figure 8 The electrode grid line manufacturing method diagram of the solar cell piece of the specific application embodiment 3 of the present application.

[0049] Figure 9 The electrode grid line manufacturing method diagram of the solar cell piece of the specific application embodiment 4 of the present application. DETAILED DESCRIPTION

[0050] In order to make the technical problems, technical solutions and beneficial effects of the present application more clear, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and do not limit the present application.

[0051] The terms "first", "second", "third", "fourth" and the like (if any) in the description, claims and above drawings of the present application are used to distinguish similar objects, and do not necessarily have to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0052] The technical solutions of the present application are described in detail below in combination with specific embodiments. These specific embodiments below can be combined with each other, and the same or similar concepts or processes can not be described in some embodiments.

[0053] Embodiment 1, thin film mask of two-layered structure

[0054] The embodiment of the present application provides a structure of a thin film mask of two-layered structure, Figure 1 The structure of the thin film mask of the embodiment 1 of the present application is shown in the schematic diagram as Figure 1 The structure of the thin film mask comprises:

[0055] A first layer 1 and a second layer 2; the first layer 1 and the second layer 2 are arranged in a stack; the second layer 2 comprises an adhesive film.

[0056] The first layer 1 has an absorption rate ≥20% under the irradiation of an ultraviolet light source and a thickness below 200um, wherein the wavelength of the ultraviolet light source is 355±15nm.

[0057] Alternatively, the first layer 1 has an absorption rate ≥20% under the irradiation of a green light source and a thickness below 200um, wherein the wavelength of the green light source is 530±15nm.

[0058] Alternatively, the first layer 1 has an absorption rate ≥20% under the irradiation of an infrared light source and a thickness below 200um, wherein the wavelength of the infrared light source is 1045±20nm.

[0059] The first layer 1 has a visible light transmittance ≤90%.

[0060] The thin film mask provided by the embodiment sets specific optical properties, such as the absorption rate and the visible light transmittance, for the first layer, so that the first layer is irradiated by some specific wavelength range of light source, such as ultraviolet laser, green laser or infrared laser, to patternize the first layer, and then the adhesive film of the second layer is used to adhere the patternized thin film mask to the target object to be processed for subsequent area patterning.

[0061] Compared with photoresist development, the thin film mask provided by the embodiment uses optical properties, and the required power of the light source is lower than that of ordinary thin film, which can save costs. Further, the patternized content is formed by a low-power light source, and the adhesive film is also low in cost and does not need to match complex processes to realize patternization, thereby realizing cost reduction and efficiency increase. In addition, compared with a metal mask, the thin film mask provided by the embodiment is pasted to the surface of the target object to be processed by the adhesive film, so that the thin film mask is well combined with the surface, and compared with the metal mask, the thin film mask is not affected by the hollowed-out area, so that the patternized content is more accurate and the quality is improved.

[0062] Embodiment 2, thin film mask of three-layered structure

[0063] The embodiment of the present application provides a structure of a thin film mask of three-layered structure, Figure 2A structural diagram of the thin film mask of embodiment 2 of the present application is shown in Figure 2 The structure of the thin film mask includes:

[0064] a first layer 1, a second layer 2 and a third layer 3; the first layer 1, the second layer 2 and the third layer 3 are sequentially stacked, and the third layer 3 is stacked on the side of the second layer 2 away from the first layer 1;

[0065] The second layer 2 includes an adhesive film, and the third layer 3 includes a release film.

[0066] The first layer 1 has an absorption rate ≥20% under the irradiation of an ultraviolet light source and a thickness of 200um or less, wherein the wavelength of the ultraviolet light source is 355±15nm.

[0067] Alternatively, the first layer 1 has an absorption rate ≥20% under the irradiation of a green light source and a thickness of 200um or less, wherein the wavelength of the green light source is 530±15nm.

[0068] Alternatively, the first layer 1 has an absorption rate ≥20% under the irradiation of an infrared light source and a thickness of 200um or less, wherein the wavelength of the infrared light source is 1045±20nm.

[0069] The visible light transmittance of the first layer 1 is ≤90%.

[0070] The thin film mask provided in the embodiment further includes a release film, which protects the adhesive film from sticking to other things during the patterning process of the thin film mask, facilitates tearing off the release film after the patterning process, and facilitates sticking the patterned thin film mask to the target object to be processed.

[0071] Some features mentioned in the above embodiments will be further described in detail.

[0072] Further, the first layer has an absorption rate ≥50% under the irradiation of an ultraviolet light source and a thickness of 200um or less; further preferably, the first layer has an absorption rate ≥80% under the irradiation of an ultraviolet light source and a thickness of 200um or less.

[0073] Alternatively, the first layer has an absorption rate ≥50% under the irradiation of a green light source and a thickness of 200um or less; preferably, the first layer has an absorption rate ≥80% under the irradiation of a green light source and a thickness of 200um or less.

[0074] Alternatively, the first layer has an absorption rate ≥50% under the irradiation of an infrared light source and a thickness of 200um or less; preferably, the first layer has an absorption rate ≥80% under the irradiation of an infrared light source and a thickness of 200um or less.

[0075] In combination with the above description, for example, for a source of ultraviolet light, the absorption rate below a thickness of 200 um can be: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range therebetween.

[0076] In combination with the above description, for example, for a source of green light, the absorption rate below a thickness of 200 um can be: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range therebetween.

[0077] In combination with the above description, for example, for a source of infrared light, the absorption rate below a thickness of 200 um can be: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range therebetween.

[0078] Further, the first layer includes a high molecular film, and the material of the high molecular film is a high molecular polymer, including but not limited to: one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), biaxially oriented polypropylene (BOPP), etc.

[0079] In combination with the above description, for example, the visible light transmittance of the first layer is ≤ 90%, and the visible light transmittance can be: 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or any range therebetween.

[0080] Further, the thickness of the first layer is 1-100 um, preferably the thickness is 5-40 um, and further preferably the thickness is 10-25 um.

[0081] In combination with the above description, for example, the thickness of the first layer is: 1 um, 5 um, 10 um, 15 um, 20 um, 25 um, 30 um, 35 um, 40 um, 45 um, 50 um, 55 um, 60 um, 65 um, 70 um, 75 um, 80 um, 85 um, 90 um, 95 um, 100 um, or any range therebetween.

[0082] It should be noted that the first layer is characterized by the absorption rate of the above-mentioned various light sources, which can be achieved by adjusting the color of the first layer, adding additives with absorption characteristics, etc. For example, in the PET film, but not limited to, using various dyes, additives, color masterbatch or other substances to meet the absorption rate requirements. For example, adding black particles in the BOPP film to achieve 100% absorption rate, and for example, adding gray particles in the PO film to achieve 50% absorption rate.

[0083] Further, the second layer includes an adhesive film with an absorption rate of ≥5% under ultraviolet light source irradiation and a thickness of 200um or less, wherein the wavelength of the ultraviolet light source is 355±15nm; or, the second layer has an absorption rate of ≥5% under green light source irradiation and a thickness of 200um or less, wherein the wavelength of the green light source is 530±15nm; or, the second layer has an absorption rate of ≥5% under infrared light source irradiation and a thickness of 200um or less, wherein the wavelength of the infrared light source is 1045±20nm.

[0084] In combination with the above description, the wavelength of the ultraviolet light source is 340nm, 345nm, 350nm, 355nm, 360nm, 365nm, 370nm or any range therebetween. For example, the ultraviolet light source here can use a laser light source, such as a ultrafast pulsed laser with a pulse width in the order of picoseconds or nanoseconds, and for example, a short pulsed laser with a pulse width in the order of microseconds or nanoseconds.

[0085] In combination with the above description, the wavelength of the green light source is 515nm, 520nm, 525nm, 530nm, 535nm, 540nm, 545nm or any range therebetween. For example, the green light source here can use a laser light source, such as a ultrafast pulsed laser with a pulse width in the order of picoseconds or nanoseconds, and for example, a short pulsed laser with a pulse width in the order of microseconds or nanoseconds.

[0086] In combination with the above description, the wavelength of the infrared light source is 1025nm, 1030nm, 1035nm, 1040nm, 1045nm, 1050nm, 1055nm, 1060nm, 1065nm or any range therebetween. For example, the infrared light source here can use a laser light source, such as a ultrafast pulsed laser with a pulse width in the order of picoseconds or nanoseconds, and for example, a short pulsed laser with a pulse width in the order of microseconds or nanoseconds.

[0087] Further, the visible light transmittance of the second layer is ≤100%, preferably, the visible light transmittance of the second layer is ≤90%.

[0088] In combination with the above description, for example, the visible light transmittance of the second layer can be: 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any range therebetween.

[0089] Further, the second layer has an absorption rate ≥ 50% under ultraviolet light source irradiation and a thickness of 200 um or less, preferably, the second layer has an absorption rate ≥ 80% under ultraviolet light source irradiation and a thickness of 200 um or less.

[0090] Here, the absorption rate refers to the description of the absorption rate above.

[0091] It should be noted that in combination with the above description, the thin film mask needs to be designed to have a higher absorption rate in a certain wavelength range, so as to efficiently absorb the energy of the laser in the patterning of the thin film mask using a laser light source, thereby improving the energy efficiency and patterning accuracy. The specific design needs to be made according to the laser light source used.

[0092] Further, the material of the adhesive film included in the second layer includes but is not limited to one or more of silicone, acrylic adhesive, polyurethane, rubber, polyisobutylene, etc.

[0093] Further, the thickness of the second layer is 1-30 um, preferably the thickness is 2-15 um, and further preferably the thickness is 3-10 um.

[0094] In combination with the above description, for example, the thickness of the second layer is: 1 um, 5 um, 10 um, 15 um, 20 um, 25 um, 30 um, or any range therebetween.

[0095] Here, the characteristics of the adhesive film are further refined. When the material of the adhesive film includes but is not limited to one or more of silicone, acrylic adhesive, polyurethane, rubber, polyisobutylene, etc., the peel strength of the adhesive film at a first temperature is in the range of 1-50 gf / cm, preferably the peel strength is in the range of 5-30 gf / cm, and further preferably the peel strength is in the range of 6-15 gf / cm. The first temperature is 15-30℃, preferably the first temperature is 20-30℃, and further preferably the first temperature is 20-25℃.

[0096] When the material of the adhesive film includes a one-way temperature-sensitive adhesive, the adhesion of the one-way temperature-sensitive adhesive exhibits irreversibility under different temperature conditions, and the peel strength of the one-way temperature-sensitive adhesive decreases with the increase of temperature. The use of the one-way temperature-sensitive adhesive here is to better tear off the thin film mask when the temperature is applied.

[0097] Specifically, the release strength of the unidirectional temperature sensitive adhesive in the second layer of the adhesive film is 5-30 gf / cm at a temperature of 50-140 °C. For example, the release strength is 25 gf / cm at a temperature of 50 °C, 21 gf / cm at a temperature of 70 °C, 15 gf / cm at a temperature of 100 °C, and 5 gf / cm at a temperature of 140 °C. It should be noted that the above data is only an example, and the specific parameter requirements can be adjusted according to the actual production operation requirements.

[0098] When the material of the adhesive film includes a thermal debonding adhesive, the adhesion of the thermal debonding adhesive exhibits irreversibility at a temperature greater than or equal to a second temperature, and the release strength of the thermal debonding adhesive at a temperature greater than or equal to the second temperature is less than the release strength of the thermal debonding adhesive at a temperature less than the second temperature, i.e., the release strength of the thermal debonding adhesive at a temperature greater than or equal to the second temperature decreases, preferably rapidly.

[0099] Specifically, the second temperature is 70 °C, preferably the second temperature is 70-150 °C, and further preferably the second temperature is 90-150 °C.

[0100] When the material of the adhesive film includes a bidirectional temperature sensitive adhesive, the adhesion of the bidirectional temperature sensitive adhesive exhibits reversibility at different temperatures, and the release strength of the bidirectional temperature sensitive adhesive increases with increasing temperature. The use of the bidirectional temperature sensitive adhesive is to better tear off the film mask at the time of applying the temperature.

[0101] Specifically, the release strength of the bidirectional temperature sensitive adhesive in the second layer of the adhesive film is 5-30 gf / cm at a temperature of 50-140 °C. For example, the release strength is 5 gf / cm at a temperature of 50 °C, 15 gf / cm at a temperature of 80 °C, 20 gf / cm at a temperature of 110 °C, and 30 gf / cm at a temperature of 140 °C. It should be noted that the above data is only an example, and the specific parameter requirements can be adjusted according to the actual production operation requirements.

[0102] In combination with the above description, for example, the peel strength of the adhesive film is: 1 gf / cm, 2 gf / cm, 3 gf / cm, 4 gf / cm, 5 gf / cm, 6 gf / cm, 7 gf / cm, 8 gf / cm, 9 gf / cm, 10 gf / cm, 11 gf / cm, 12 gf / cm, 13 gf / cm, 14 gf / cm, 15 gf / cm, 16 gf / cm, 17 gf / cm, 18 gf / cm, 19 gf / cm, 20 gf / cm, 21 gf / cm, 22 gf / cm, 23 gf / cm, 24 gf / cm, 25 gf / cm, 26 gf / cm, 27 gf / cm, 28 gf / cm, 29 gf / cm, 30 gf / cm, 35 gf / cm, 40 gf / cm, 45 gf / cm, 50 gf / cm, 55 gf / cm, 60 gf / cm, 100 gf / cm, 150 gf / cm, 300 gf / cm, 400 gf / cm, 500 gf / cm, 1000 gf / cm, or any range therebetween.

[0103] For example, the temperature is: 5°C, 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, 135°C, 140°C, 145°C, 150°C, 155°C, 160°C, 165°C, 170°C, 175°C, 180°C, 185°C, 190°C, 195°C, 200°C, or any range therebetween.

[0104] The adhesive film needs to have a certain peel strength so that the film mask can be firmly attached to the target object to be processed, and will not produce edge curling and warping and the like. For example, in a certain scenario, it is necessary to operate at 20°C or 25°C and the peel strength is in the range of 15-20 gf / cm. For example, in another scenario, it is necessary to operate at 80°C and the peel strength is in the range of 30-35 gf / cm. In general, the specific peel strength can be adjusted according to the use scenario.

[0105] Here, for the definition of peel strength, the peel strength test value of the adhesive tape to the steel plate in the national standard GB / T 2792-2014 of the People's Republic of China can be used as the identification method of the peel strength of the present application. Next, the thickness of the film mask of the above embodiment is further described.

[0106] Further, the thickness of the film mask is 10-100 um, and the preferred thickness is 10-50 um.

[0107] Here, in view of the thickness of the overall film mask, in combination with the above description, for example, the thickness of the overall film mask is: 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um, 50um, 55um, 60um, 65um, 70um, 75um, 80um, 85um, 90um, 95um, 100um or any range therebetween.

[0108] In view of different light sources, such as laser light sources, and the use requirements of film mask patterning, the thickness of the overall film mask needs to be designed and controlled to match the actual requirements of the light source and patterning.

[0109] In general, the selection of the thickness of the overall film mask can be adjusted according to the use scenario and needs.

[0110] Further, the third layer of the film mask includes a release film, which is a high molecular polymer, including but not limited to: one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), biaxially oriented polypropylene (BOPP), etc.

[0111] Further, the thickness of the third layer is 1-100um, preferably the thickness is 5-40um, and further preferably the thickness is 10-25um.

[0112] In combination with the above description, for example, the thickness of the third layer is: 1um, 5um, 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um, 50um, 55um, 60um, 65um, 70um, 75um, 80um, 85um, 90um, 95um, 100um or any range therebetween.

[0113] The film mask described above can be applied in a deposition process of a solar cell.

[0114] Further, the deposition process includes: a functional layer deposition process and / or a conductive layer deposition process. The film mask can be selected for use in the manufacturing process of the functional layer and the conductive layer, or both. The functional layer deposition includes dielectric layer deposition; the conductive layer deposition includes: transparent conductive layer deposition and / or metal conductive layer deposition.

[0115] The dielectric layer described above includes but is not limited to: one or more of a passivation layer, an insulating layer, an anti-reflection layer, etc.

[0116] Specific scenario embodiment 1

[0117] The film mask is composed of a high molecular film and an adhesive film.

[0118] The high molecular film uses a blue PET film material with a thickness of 5 um, and the specific parameters are: visible light transmittance ≤ 90%, and energy absorption rate of 355 nm ultraviolet light wavelength ≥ 50%. Figure 3 The wavelength and absorption rate of the high molecular film using a blue PET film material in the specific scenario embodiment 1 of the present application are shown in the following figure. Figure 3 As shown in the figure, the abscissa represents the wavelength value range, and the unit is nm. The ordinate represents the absorption rate, and the unit is %. In the figure, 31 represents the absorption rate of the high molecular film using a blue PET film material in different wavelength ranges. 32 represents the absorption rate of the high molecular film using a transparent PET film material in different wavelength ranges. As can be seen, the energy absorption rate of the high molecular film using a blue PET film material at a wavelength of 355 nm ultraviolet light wavelength is 53%, as shown in 33.

[0119] The adhesive film is a silica gel adhesive with a thickness of 5 um, and the specific parameters are: visible light transmittance ≤ 90%, energy absorption rate of 355 nm ultraviolet light wavelength ≥ 5%, and peel strength at 25℃ is 10-15 gf / cm.

[0120] Specific scenario embodiment 2

[0121] The film mask is composed of a high molecular film and an adhesive film.

[0122] The high molecular film uses a yellow PET film material with a thickness of 10 um, and the specific parameters are: visible light transmittance ≤ 40%, and energy absorption rate of 530 nm green light wavelength ≥ 20%. Figure 4 The wavelength and absorption rate of the high molecular film using a yellow PET film material in the specific scenario embodiment 2 of the present application are shown in the following figure. Figure 4 As shown in the figure, the abscissa represents the wavelength value range, and the unit is nm. The ordinate represents the absorption rate, and the unit is %. In the figure, 41 represents the absorption rate of the high molecular film using a yellow PET film material in different wavelength ranges. As can be seen, the energy absorption rate of the high molecular film using a yellow PET film material at a wavelength of 530 nm green light wavelength is 23%, as shown in 42.

[0123] The adhesive film is a silica gel adhesive with a thickness of 7 um, and the specific parameters are: visible light transmittance ≤ 40%, energy absorption rate of 530 nm green light wavelength ≥ 35%, and peel strength at 25℃ is 20-25 gf / cm.

[0124] Specific scenario embodiment 3

[0125] The film mask is composed of a high molecular film and an adhesive film.

[0126] The polymer membrane uses 15µm green PO film material, with the following specific parameters: visible light transmittance ≤80%, and 1065nm infrared wavelength energy absorption rate ≥20%. Figure 5 This is a schematic diagram illustrating the wavelength and absorbance of the polymer membrane using green PO thin film material in Example 3 of the present invention. Figure 5 As shown in the figure, the horizontal axis represents the wavelength range in nm, and the vertical axis represents the absorptivity in %. Figure 51 represents the absorptivity of the polymer membrane using green PO film material in different wavelength ranges. It can be seen that the energy absorption rate of the polymer membrane using green PO film material at the 1065nm infrared wavelength is 20%, as shown in Figure 52.

[0127] The adhesive film is a 10µm thick silicone adhesive with the following parameters: visible light transmittance ≤80%, 1065nm infrared wavelength energy absorption rate ≥25%, and peel strength of 10-15gf / cm at 20℃.

[0128] Specific Scenario Example 4

[0129] The thin-film mask is composed of a polymer film and an adhesive film stack.

[0130] The polymer membrane uses 5µm brown PI film material, with the following specific parameters: visible light transmittance ≤80%, and 355nm ultraviolet wavelength energy absorption rate ≥20%.

[0131] The adhesive film is a 5µm thick silicone adhesive with the following parameters: visible light transmittance ≤80%, 355nm ultraviolet wavelength energy absorption rate ≥20%, and peel strength of 15-20gf / cm at 20℃.

[0132] Specific Scenario Example 5

[0133] The thin-film mask is composed of a polymer film and an adhesive film stack.

[0134] The polymer membrane uses 10µm blue PVC film material with the following parameters: visible light transmittance ≤70%, and 343nm ultraviolet wavelength energy absorption rate ≥40%.

[0135] The adhesive film is made of acrylic adhesive with a thickness of 7 μm. The specific parameters are: visible light transmittance ≤80%, 343nm ultraviolet wavelength energy absorption rate ≥30%, and peel strength of 20-25 gf / cm at 20℃.

[0136] Specific Scenario Example 6

[0137] The thin-film mask is composed of a polymer film and an adhesive film stack.

[0138] The polymer film uses a 20-um brown BOPP film material, and specific parameters are: visible light transmittance ≤80%, and 1030-nm infrared wavelength energy absorption rate ≥15%.

[0139] The adhesive film is a 15-um polyurethane adhesive, and specific parameters are: visible light transmittance ≤90%, 1030-nm infrared wavelength energy absorption rate ≥20%, and peeling strength is 25-30 gf / cm at 20°C.

[0140] Specific scenario embodiment 7

[0141] The film mask is composed of a polymer film and an adhesive film.

[0142] The polymer film uses a 5-um blue PET film material, and specific parameters are: visible light transmittance ≤90%, and 355-nm ultraviolet wavelength energy absorption rate ≥20%.

[0143] The adhesive film is a 5-um one-way temperature-sensitive adhesive, and specific parameters are: visible light transmittance ≤73%, 355-nm ultraviolet wavelength energy absorption rate ≥10%, peeling strength is 20-25 gf / cm at 15-25°C, peeling strength is 20-30 gf / cm at 50-100°C, and peeling strength is 5-7 gf / cm at 140°C.

[0144] Specific scenario embodiment 8

[0145] The film mask is composed of a polymer film and an adhesive film.

[0146] The polymer film uses an 8-um red PO film material, and specific parameters are: visible light transmittance ≤43%, and 545-nm green wavelength energy absorption rate ≥36%.

[0147] The adhesive film is a 7-um one-way temperature-sensitive adhesive, and specific parameters are: visible light transmittance ≤32%, 545-nm green wavelength energy absorption rate ≥41%, peeling strength is 23-25 gf / cm at 20-30°C, peeling strength is 17-24 gf / cm at 60-110°C, and peeling strength is 5-6 gf / cm at 130°C.

[0148] Specific scenario embodiment 9

[0149] The film mask is composed of a polymer film and an adhesive film.

[0150] The polymer film uses a 6-um blue PET film material, and specific parameters are: visible light transmittance ≤80%, and 350-nm ultraviolet wavelength energy absorption rate ≥25%.

[0151] The adhesive film is a bidirectional temperature-sensitive adhesive with a thickness of 6 um, and specific parameters are: visible light transmittance ≤61%, 350 nm ultraviolet light wavelength energy absorption rate ≥5%, peeling strength at 50°C is 5-7 gf / cm, peeling strength at 80-100°C is 15-21 gf / cm, and peeling strength at 120-140°C is 26-30 gf / cm.

[0152] Specific scene embodiment 10

[0153] The film mask is composed of a polymer film and an adhesive film.

[0154] The polymer film uses a red BOPP film material with a thickness of 10 um, and specific parameters are: visible light transmittance ≤75%, 520 nm green light wavelength energy absorption rate ≥45%.

[0155] The adhesive film is a bidirectional temperature-sensitive adhesive with a thickness of 8 um, and specific parameters are: visible light transmittance ≤49%, 520 nm green light wavelength energy absorption rate ≥12%, peeling strength at 55°C is 6-10 gf / cm, peeling strength at 70-90°C is 12-19 gf / cm, and peeling strength at 100-130°C is 20-25 gf / cm.

[0156] Specific scene embodiment 11

[0157] The film mask is composed of a polymer film, an adhesive film, and a release film.

[0158] The polymer film uses a blue PVC film material with a thickness of 8 um, and specific parameters are: visible light transmittance ≤80%, 340 nm ultraviolet light wavelength energy absorption rate ≥30%.

[0159] The adhesive film is a silicone-based adhesive with a thickness of 9 um, and specific parameters are: visible light transmittance ≤8%, 340 nm ultraviolet light wavelength energy absorption rate ≥34%, and peeling strength at 25°C is 16-18 gf / cm.

[0160] The release film is a transparent PET film with a thickness of 5 um.

[0161] Specific scene embodiment 12

[0162] The film mask is composed of a polymer film, an adhesive film, and a release film.

[0163] The polymer film uses a green PO film material with a thickness of 10 um, and specific parameters are: visible light transmittance ≤48%, 1040 nm infrared light wavelength energy absorption rate ≥39%.

[0164] The adhesive film is a silica gel adhesive with a thickness of 8 um, and the specific parameters are: visible light transmittance ≤31%, 1040 nm infrared wavelength energy absorption rate ≥31%, and peeling strength at 25℃ is 10-15 gf / cm.

[0165] The release film is a transparent PET film with a thickness of 5 um.

[0166] The specific application of the thin film mask is shown in the following embodiment, which is applied in the field of solar cell manufacturing, and is specifically applied in the process of manufacturing electrode grid lines.

[0167] Specific application example 1

[0168] Here, the specific features of the thin film mask used are: the thin film mask is composed of a high molecular film and an adhesive film, the high molecular film uses a 5 um blue PET film, the visible light transmittance is ≤73%, and the 350 nm ultraviolet light wavelength energy absorption rate is ≥47%. The adhesive film is a silica gel adhesive with a thickness of 5 um, the visible light transmittance is ≤54%, the 350 nm ultraviolet light wavelength energy absorption rate is ≥24%, and the peeling strength at 25℃ is 10-15 gf / cm.

[0169] By using the high molecular film and the adhesive film with special optical properties, the energy absorption in the ultraviolet light wavelength range is good, and the ultraviolet light laser power required for forming the patterned content by laser scribing the thin film mask is small, which can save cost.

[0170] In addition, the peeling strength range of the adhesive film is suitable, so that the adhesion of the thin film mask meets the processing requirements, and it cannot be too loose or too sticky, that is, the thin film mask will not fall off during the process of manufacturing electrode grid lines, and the solar cell piece will not be damaged during the film tearing process after manufacturing the electrode grid lines.

[0171] Figure 6 The method for manufacturing electrode grid lines of the solar cell piece of the specific application example 1 of the present application is shown in the following schematic diagram. Figure 6 The specific method in this embodiment includes the following steps.

[0172] S101, scribe the electrode grid line pattern of the thin film mask by laser, to form a patterned thin film mask.

[0173] Firstly, the designed pattern is scribed on the thin film mask using a laser etching process. The laser uses a picosecond level ultraviolet light source with a wavelength of 350 nm. The pattern width is preferably 1 um-500 um, and further preferably 1 um-20 um. The pattern line spacing is 50 um-5 mm, and further preferably 500 um-2 mm. It should be noted that the pattern designed on the thin film mask is the electrode grid line pattern on the subsequent solar cell piece. In addition, the selection of the width and line spacing of the pattern can be adjusted according to the use scene and needs.

[0174] S102, paste the patterned thin film mask on the solar cell piece.

[0175] Next, the thin film mask with scribed electrode grid line pattern is pasted on the side of the solar cell piece where the electrode grid line needs to be set, that is, the side of the thin film mask where the silicone adhesive is exposed is pasted to the solar cell piece.

[0176] S103, deposit the solar cell piece pasted with the patterned thin film mask.

[0177] Secondly, the solar cell piece pasted with the patterned thin film mask is deposited. Specifically, the metal electrode grid line is made by using a physical vapor deposition (PVD) method, or the electrode grid line is made on the solar cell piece by using an electroplating method. The PVD method and the electroplating method are well known techniques and will not be described here.

[0178] S104, strip the patterned thin film mask on the solar cell piece after deposition.

[0179] Then, the patterned thin film mask on the solar cell piece after deposition is stripped, and the covered area on the solar cell piece does not form an electrode grid line, and the uncovered area forms an electrode grid line.

[0180] S105, anneal the solar cell piece.

[0181] Finally, the solar cell piece with patterned electrode grid line is annealed to complete the production of the electrode grid line.

[0182] Specific application example 2

[0183] Here, the features of the thin film mask used specifically are as follows: the thin film mask is composed of a polymer film, an adhesive film and a release film, the polymer film uses a 10um red BOPP film, the visible light transmittance is ≤48%, and the 530nm green light wavelength energy absorption rate is ≥31%. The adhesive film is a 3um thick silicone adhesive, the visible light transmittance is ≤61%, the 530nm green light wavelength energy absorption rate is ≥32%, and the peel strength is 16-21gf / cm at 20℃. The release film is a 10um thick transparent PET film.

[0184] By using the polymer film and the adhesive film with special optical properties, the energy absorption in the green light wavelength range is good, and the green laser power required for forming the patterned content by using the green laser to scribe the thin film mask is small, which can save costs.

[0185] In addition, the peel strength range of the adhesive film is used to make the adhesion of the thin film mask meet the processing requirements, that is, the thin film mask will not fall off during the production of the electrode grid lines, and the solar cell piece will not be damaged during the film tearing process after the production of the electrode grid lines.

[0186] Figure 7 For the method of manufacturing electrode grid lines of the solar cell piece according to Embodiment 2 of the application, a schematic diagram is shown in Figure 7 The specific method in this embodiment includes the following steps.

[0187] S201, scribe the electrode grid line pattern of the thin film mask by laser, to form a patterned thin film mask.

[0188] First, use laser etching process to scribe the designed pattern on the thin film mask, the laser uses picosecond level ultraviolet light source with a wavelength of 350nm. The pattern width is preferably 1um-500um, and further preferably 1um-20um, and the pattern line spacing is 50um-5mm, and further preferably 500um-2mm. It should be noted that the pattern designed on the thin film mask is the electrode grid line pattern on the subsequent solar cell piece. In addition, the selection of the pattern width and the line spacing can be adjusted according to the use scene and needs.

[0189] S202, paste the patterned thin film mask on the solar cell piece.

[0190] Then, after tearing off the release film of the thin film mask with scribed electrode grid line pattern, paste it on the side of the solar cell piece where the electrode grid line is needed, that is, the side of the thin film mask with exposed silicone adhesive is pasted to the solar cell piece.

[0191] S203, perform deposition treatment on the solar cell piece with the patterned thin film mask pasted.

[0192] Secondly, the solar cell piece with the patterned thin film mask pasted is subjected to deposition treatment. Specifically, the metal electrode grid lines are made by adopting a physical vapor deposition (PVD) method or are made on the solar cell piece by adopting an electroplating method. The PVD method and the electroplating method are very well known techniques and are not described here.

[0193] S204, the patterned thin film mask on the solar cell piece after the deposition treatment is peeled off.

[0194] Then, the patterned thin film mask on the solar cell piece after the deposition treatment is peeled off, and the covered area on the solar cell piece is not formed with the electrode grid lines, and the uncovered area is formed with the electrode grid lines.

[0195] S205, the solar cell piece is subjected to annealing treatment.

[0196] Finally, the solar cell piece with the patterned electrode grid lines is subjected to annealing treatment, and the making of the electrode grid lines is completed.

[0197] Specific application example 3

[0198] Here, the features of the thin film mask specifically adopted are as follows: the thin film mask is composed of a high polymer film and an adhesive film, the high polymer film uses a 15-μm blue PO thin film, the visible light transmittance is ≤62%, and the 355-nm ultraviolet light wavelength energy absorption rate is ≥58%. The adhesive film is a one-way temperature-sensitive glue with a thickness of 10 μm, the visible light transmittance is ≤75%, the 355-nm ultraviolet light wavelength energy absorption rate is ≥24%, the peeling strength is 35 gf / cm at 20°C, the peeling strength is 20-30 gf / cm at 50-85°C, and the peeling strength is 5 gf / cm at 140°C.

[0199] By adopting the high polymer thin film with special optical properties and the adhesive film, the energy absorption of the two in the ultraviolet light wavelength segment is good, the ultraviolet light laser power demand is small when the ultraviolet light laser is used to scribe the thin film mask to form the patterned content, and the cost can be saved.

[0200] In addition, the peeling strength range of the adhesive film is adopted to be a suitable numerical range, so that the adhesion of the thin film mask meets the processing requirements, and the thin film mask cannot be too loose or too sticky, that is, the thin film mask will not fall off during the making of the electrode grid lines, and the solar cell piece will not be damaged during the film tearing process after the making of the electrode grid lines.

[0201] S301, the electrode grid line pattern of the thin film mask is scribed by laser to form a patterned thin film mask.

[0202] Figure 8A schematic diagram of the method for manufacturing electrode grid lines of a solar cell according to Embodiment 3 of the present application is shown in FIG. 3. Figure 8 The specific method in this embodiment includes the following steps.

[0203] First, the designed pattern is scribed on the thin film mask using a laser etching process. The laser uses a picosecond level ultraviolet light source with a wavelength of 350 nm. The pattern width is preferably 1 um-500 um, and further preferably 1 um-20 um. The pattern line spacing is 50 um-5 mm, and further preferably 500 um-2 mm. It should be noted that the pattern designed on the thin film mask is the electrode grid line pattern on the subsequent solar cell. In addition, the selection of the width and line spacing of the pattern can be adjusted accordingly according to the use scenario and needs.

[0204] S302, paste the patterned thin film mask on the solar cell.

[0205] Next, the thin film mask with the scribed electrode grid line pattern is pasted on the side of the solar cell where the electrode grid line is needed, i.e. the side of the thin film mask where the one-way temperature sensitive adhesive is exposed is pasted to the solar cell.

[0206] S303, deposit the solar cell with the pasted patterned thin film mask.

[0207] Secondly, the solar cell with the pasted patterned thin film mask is subjected to deposition treatment. Specifically, the metal electrode grid line is made by physical vapor deposition (PVD) method, or the electrode grid line is made on the solar cell by electroplating method. The PVD method and the electroplating method are well known techniques and will not be described here.

[0208] S304, the patterned thin film mask on the solar cell after deposition treatment is peeled off by heating.

[0209] Then, the solar cell after deposition treatment is heated, such as using a hot filament at 150°C for 5 minutes, or using an infrared lamp at 150°C for 10 minutes. Since the one-way temperature sensitive adhesive has a lower peel strength at 150°C than at room temperature, the patterned thin film mask on the solar cell after deposition treatment can be peeled off more easily. Finally, the covered area on the solar cell does not form an electrode grid line, and the uncovered area forms an electrode grid line.

[0210] S305, anneal the solar cell.

[0211] Finally, the solar cell with the patterned electrode grid line is subjected to annealing treatment to complete the manufacturing of the electrode grid line.

[0212] Specific application embodiment 4

[0213] Here, the characteristics of the thin film mask actually used are as follows: the thin film mask is composed of a polymer film and an adhesive film, the polymer film uses a 20um green PVC film, the visible light transmittance is ≤58%, and the energy absorption rate of 547nm green light is ≥39%. The adhesive film is a 15um thick bidirectional temperature-sensitive adhesive, the visible light transmittance is ≤41%, the energy absorption rate of 547nm green light is ≥65%, the peel strength is 5gf / cm at 25℃, the peel strength is 17-22gf / cm at 50-80℃, and the peel strength is 27-30gf / cm at 120-140℃.

[0214] By using the polymer film and the adhesive film with special optical properties, the energy absorption of the two in the green light wavelength range is good, and the green laser power required for forming the patterned content by using the green laser to scribe the thin film mask is small, which can save costs.

[0215] In addition, according to the peel strength range of the adhesive film, a suitable numerical range is used to make the adhesion of the thin film mask meet the processing requirements, that is, the thin film mask will not fall off during the process of making the electrode grid lines, and the solar cell piece will not be damaged during the film tearing process after the electrode grid lines are made.

[0216] Figure 9 The method for making electrode grid lines of the solar cell piece of the specific application embodiment 4 of the present application is shown in FIG. Figure 9 The specific method in this embodiment includes the following steps.

[0217] S401, forming a patterned thin film mask by laser scribing the electrode grid line pattern of the thin film mask.

[0218] First, the designed pattern is scribed on the thin film mask using a laser etching process, the laser uses a picosecond-level green light source with a wavelength of 547nm. The pattern width is preferably 1um-500um, and further preferably 1um-20um, and the pattern line spacing is 50um-5mm, and further preferably 500um-2mm. It should be noted that the pattern designed on the thin film mask is the electrode grid line pattern on the subsequent solar cell piece. In addition, the selection of the width and line spacing of the pattern can be adjusted according to the use scene and needs.

[0219] S402, paste the patterned thin film mask to the solar cell piece.

[0220] Then, the thin film mask with the electrode grid line pattern is pasted on the side of the solar cell piece where the electrode grid line is needed, that is, the side of the thin film mask where the bimetallic temperature-sensitive glue is exposed is pasted on the solar cell piece.

[0221] S403, the solar cell piece pasted with the patterned thin film mask is heated.

[0222] The solar cell piece pasted with the patterned thin film mask is heated by heating. Because the peeling strength of the bimetallic temperature-sensitive glue increases with the increase of temperature, the pasting of the patterned thin film mask and the solar cell piece is made more firm by heating, which is convenient for the subsequent process of processing and treatment. The heating mode is, for example, heating at 130°C for 2 minutes by using a hot filament, or heating at 70°C for 5 minutes by using an infrared lamp, and the like.

[0223] S404, the solar cell piece pasted with the patterned thin film mask is deposited.

[0224] Secondly, the solar cell piece pasted with the patterned thin film mask is deposited. Specifically, the metal electrode grid line is made by using a physical vapor deposition (PVD) method, or the electrode grid line is made on the solar cell piece by using an electroplating method. The PVD method and the electroplating method are well-known technologies, and are not described here.

[0225] S405, after the cooling treatment of the solar cell piece after the deposition treatment, the patterned thin film mask is peeled off.

[0226] Then, because the bimetallic temperature-sensitive glue has reversibility, that is, the peeling strength increases with the increase of temperature, and the peeling strength decreases with the decrease of temperature, therefore, by reducing the temperature of the solar cell piece after the deposition treatment, that is, after the cooling treatment, the patterned thin film mask on the solar cell piece after the deposition treatment can be peeled off more easily. Finally, the covered area on the solar cell piece does not form the electrode grid line, and the non-covered area forms the electrode grid line.

[0227] S406, the solar cell piece is annealed.

[0228] Finally, the solar cell piece with the patterned electrode grid line is annealed to complete the production of the electrode grid line.

[0229] In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0230] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A thin-film mask, characterized in that, The thin-film mask is used in the deposition process of solar cells. The thin-film mask includes: a first layer and a second layer; the first layer and the second layer are stacked; the second layer is an adhesive film, the first layer is a polymer film, and the first layer includes additives to adjust the absorption characteristics of the first layer; the polymer film material is a polymer, including but not limited to: polyethylene terephthalate, polyolefin film, polyimide, polyvinyl chloride, and biaxially oriented polypropylene, or one or more of these. The first layer has an absorption rate of ≥20% under ultraviolet light irradiation and a thickness of less than 200 μm, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the first layer has an absorption rate of ≥20% under green light irradiation and a thickness of less than 200 μm, wherein the wavelength of the green light source is 530±15 nm. The visible light transmittance of the first layer is ≤90%.

2. The thin film mask according to claim 1, characterized in that, The first layer has an absorption rate of ≥50% under ultraviolet light irradiation and a thickness of less than 200 μm. Alternatively, the first layer has an absorption rate of ≥50% under green light irradiation and a thickness of less than 200 μm.

3. The thin film mask according to claim 1, characterized in that, The thickness of the first layer is 1-100um.

4. The thin film mask according to claim 1, characterized in that, The second layer has an absorption rate of ≥5% under ultraviolet light irradiation and a thickness of less than 200 μm, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the second layer has an absorption rate of ≥5% under green light irradiation and a thickness of less than 200 μm, wherein the wavelength of the green light source is 530±15 nm; or, the second layer has an absorption rate of ≥5% under infrared light irradiation and a thickness of less than 200 μm, wherein the wavelength of the infrared light source is 1045±20 nm.

5. The thin film mask according to claim 1, characterized in that, The absorption rate of the second layer under ultraviolet light irradiation, with a thickness of less than 200 μm, is ≥50%. Alternatively, the absorption rate of the second layer under green light irradiation, with a thickness of less than 200 μm, is ≥50%; Alternatively, the absorption rate of the second layer under infrared light irradiation, with a thickness of less than 200 μm, is ≥50%.

6. The thin film mask according to claim 1, characterized in that, The thickness of the second layer is 1-30 μm.

7. The thin film mask according to claim 1, characterized in that, The adhesive film in the second layer is made of one or more of the following materials: silicone, acrylic adhesive, polyurethane, rubber, and polyisobutylene.

8. The thin film mask according to claim 7, characterized in that, The peel strength of the second layer at the first temperature is 1-50 gf / cm; The first temperature is 15-30℃.

9. The thin film mask according to claim 1, characterized in that, The adhesive film in the second layer is made of a one-way thermosensitive adhesive, the adhesive of which exhibits irreversible adhesion under different temperature conditions; Furthermore, the peel strength of the unidirectional temperature-sensitive adhesive decreases as the temperature increases.

10. The thin film mask according to claim 1, characterized in that, The material of the adhesive film in the second layer includes a heat-resistant adhesive, the adhesive of which exhibits irreversibility under conditions greater than or equal to a second temperature. Furthermore, the peel strength of the heat-resistant adhesive at a temperature greater than or equal to the second temperature is less than the peel strength of the heat-resistant adhesive at a temperature less than the second temperature. The second temperature is 70-150℃.

11. The thin film mask according to claim 9, characterized in that, The peel strength is 5-30 gf / cm, and the temperature is 50-140℃.

12. The thin film mask according to claim 1, characterized in that, The adhesive film in the second layer is made of a two-dimensional thermosensitive adhesive; the adhesiveness of the two-dimensional thermosensitive adhesive is reversible under different temperature conditions. Furthermore, the peel strength of the bidirectional thermosensitive adhesive increases with increasing temperature.

13. The thin film mask according to claim 12, characterized in that, The peel strength is 5-30 gf / cm, and the temperature is 50-140℃.

14. The thin film mask according to claim 1, characterized in that, The thickness of the thin film mask is 10-100 μm.

15. The thin film mask according to claim 1, characterized in that, The thin-film mask further includes: a third layer; The third layer is disposed on the side of the second layer away from the first layer; The third layer includes a release film; The release film is a high molecular polymer, including but not limited to: polyethylene terephthalate, polyolefin film, polyimide, polyvinyl chloride, and biaxially oriented polypropylene, or one or more of these.

16. The thin film mask according to claim 15, characterized in that, The thickness of the third layer is 1-100 μm.

17. A deposition process for a solar cell, wherein the deposition process uses a thin film mask as described in any one of claims 1-14.

18. The deposition process according to claim 17, wherein the deposition process comprises: Functional layer deposition process and / or conductive layer deposition process; The functional layer deposition includes dielectric layer deposition; the conductive layer deposition includes transparent conductive layer deposition and / or metallic conductive layer deposition.

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