Method for manufacturing a semiconductor component

Abstract

The method for manufacturing a semiconductor member of the present application includes: a laser processing step of forming a laser condensing spot on an object including a semiconductor, and relatively moving the condensing spot with respect to the object along a line extending in a circular shape as viewed in a Z direction intersecting an incident plane of the laser of the object, thereby forming a modified region and a crack extending from the modified region in the object along the line, and a separation step of separating a portion of the object with the modified region and the crack as boundaries after the laser processing step, thereby forming a semiconductor member from the object.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing semiconductor components. Background Technology

[0002] Patent Document 1 describes a laser cutting apparatus. This laser cutting apparatus includes: a stage for moving a wafer, a laser head for irradiating the wafer with a laser, and a control unit for controlling each part. The laser head includes: a laser source emitting a processing laser for forming a modified region inside the wafer, a dichroic mirror and a focusing lens arranged sequentially in the optical path of the processing laser, and an AF device.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 5743123

[0006] Patent Document 2: Japanese Patent Application Publication No. 2006-24840 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] For the aforementioned wafers, bevels are sometimes formed on the outer periphery for purposes such as protecting the back surface during handling. Patent Document 2 describes a method for beveling a GaP wafer. In this method, a disk-shaped diamond grinding stone with grinding grooves on its outer edge is rotated at high speed, and the grooves of the diamond grinding stone contact the peripheral end of the side surface of the GaP wafer while the GaP wafer is rotated at low speed to grind that peripheral end. As described above, currently, to form bevels on a wafer, a grinding apparatus different from the laser processing apparatus described in Patent Document 1 is required. Therefore, in the aforementioned technical field, it is significant that bevels can be formed through laser processing.

[0009] The purpose of this disclosure is to provide a method for manufacturing a semiconductor component, which can be formed by laser processing to form a semiconductor component with a beveled surface.

[0010] means for solving problems

[0011] The method for manufacturing a semiconductor component disclosed herein includes: a laser processing step in which a laser spot is formed on a workpiece containing a semiconductor, and the laser spot is moved relative to the workpiece along a circularly extending line observed from the Z-direction intersecting the incident surface of the laser on the workpiece, thereby forming a modified region and a crack extending from the modified region on the workpiece along the line; and a separation step in which, after the laser processing step, a portion of the workpiece is separated with the modified region and the crack as boundaries, thereby forming a semiconductor component from the workpiece. The laser processing step includes: a first processing step in which the laser spot is moved relative to the workpiece along the line, thereby forming a first modified region as the modified region, and forming a first crack extending from the first modified region as the crack. In the first processing step, a first crack is formed that is inclined relative to the Z-direction within an intersecting surface intersecting the line. In the separation step, a semiconductor component is formed that includes an inclined surface defined by the first crack as an outer surface.

[0012] In this manufacturing method, a laser spot is moved relative to the object along a circularly extending line, thereby forming a modified region and cracks along the line on the object. At this time, a first crack, inclined in the Z direction relative to the incident plane of the laser, is formed within the intersection surface of the line. Furthermore, a portion of the object is separated using the crack containing the first crack as a boundary, thereby forming a semiconductor component. Thus, a semiconductor component is obtained having an outer surface defined by the inclined surface of the first crack. This inclined surface, for example, can be used during the handling of the semiconductor component to protect (without contact with the back surface of the surface) the back surface of the semiconductor component (the surface corresponding to the incident plane of the laser and the surface opposite to it) and to maintain the inclined surface of the semiconductor component. As described above, according to this manufacturing method, a semiconductor component with an inclined surface can be formed by laser processing.

[0013] In the semiconductor component manufacturing method disclosed herein, multiple lines may be provided on the workpiece. During a laser processing step, a focusing spot is moved relative to each of the multiple lines, thereby forming modified regions and cracks along each of the multiple lines. During a separation step, a portion of the workpiece is separated along each of the multiple lines, thereby forming multiple semiconductor components from the workpiece. As described above, when manufacturing multiple semiconductor components from one workpiece, inclined surfaces can also be formed on each semiconductor component.

[0014] In the semiconductor component manufacturing method disclosed herein, the object may have a circular shape when viewed from the Z direction, and a line concentric with the shape of the object may be provided on the object when viewed from the Z direction. In this case, although one semiconductor component is manufactured from one object, a bevel may be formed on the semiconductor component even in this case.

[0015] In the method for manufacturing a semiconductor component disclosed herein, the laser processing step may also include: a second processing step in which a focusing spot is moved relative to an object along a line, thereby forming a second modified region as a modified region on the side closer to the incident surface than the first crack, and forming a second crack extending from the second modified region toward the first crack as a crack. In the first processing step, within the intersection plane, the first crack is formed at an angle relative to the Z direction, such that it moves away from the reference line passing through the center of the line as it moves toward the incident surface. In the second processing step, within the intersection plane, the second crack extending along the Z direction is formed. In this case, a semiconductor component can be formed, comprising an inclined surface defined by the first crack and a vertical surface defined by the second crack as an outer surface.

[0016] In the method for manufacturing a semiconductor component disclosed herein, the laser processing step may also include a third processing step, wherein a focusing spot is moved relative to an object along a line to form a third modified region as a modified region closer to the incident surface than the intersection of the first and second cracks, and a third crack extending from the third modified region toward the second crack is formed as a crack. In the third processing step, within the intersection surface, the third crack is formed in a manner that approaches the reference line toward the incident surface, and is inclined relative to the Z direction. In this case, a semiconductor component may be formed, comprising an inclined surface defined by the first crack, a vertical surface defined by the second crack, and other inclined surfaces defined by the third crack as outer surfaces.

[0017] In the method for manufacturing a semiconductor component disclosed herein, the laser processing step may also include: a second processing step in which a focusing spot is moved relative to an object along a line, thereby forming a second modified region as a modified region on the side closer to the incident surface than the first crack, and forming a second crack extending from the second modified region toward the first crack as a crack. In the first processing step, within the intersection plane, the first crack is formed at an angle relative to the Z direction, such that it approaches a reference line passing through the center of the line as it moves toward the incident surface. In the second processing step, within the intersection plane, the second crack extending along the Z direction is formed. In this case, a semiconductor component can be formed, comprising an inclined surface defined by the first crack and a vertical surface defined by the second crack as an outer surface.

[0018] In the semiconductor component manufacturing method of this disclosure, a grinding step may be added between the laser processing step and the separation step, wherein the workpiece is ground along the Z direction to remove the modified region from the workpiece. Alternatively, in the semiconductor component manufacturing method of this disclosure, a grinding step may be added after the separation step, wherein the semiconductor component is ground along the Z direction to remove the modified region from the semiconductor component. In this case, a semiconductor component with the modified region removed can be obtained.

[0019] In the semiconductor component manufacturing method disclosed herein, the first processing step may also include: a first forming step and a second forming step. In the first forming step, the position of the focusing spot in the Z direction is set at a first Z position, and the focusing spot is moved relative to the line to form a fourth modified region as the first modified region. In the second forming step, the position of the focusing spot in the Z direction is set at a second Z position, which is closer to the incident surface than the first Z position, and the focusing spot is moved relative to the line to form a fifth modified region as the first modified region, and a process extending from the fifth modified region... In the first forming step, the position of the focused spot in the Y direction is set at a first Y position, where the Y direction intersects with the relative movement directions of the focused spot, namely the X and Z directions. In the second forming step, the position of the focused spot in the Y direction is set at a second Y position offset from the first Y position, and the beam shape of the focused spot in the YZ plane, which includes the Y and Z directions, is modulated such that it is tilted in the displacement direction at least closer to the incident surface than the center of the focused spot. This forms the first crack in a tilted manner in the displacement direction within the YZ plane. In this case, the tilted first crack can be appropriately formed by laser processing.

[0020] The effects of the invention

[0021] According to this disclosure, a method for manufacturing a semiconductor component can be provided, which can form a semiconductor component with a beveled surface by laser processing. Attached Figure Description

[0022] Figure 1 This is a schematic diagram showing the structure of a laser processing apparatus according to one embodiment.

[0023] Figure 2 This is a schematic diagram showing the structure of the laser irradiation section.

[0024] Figure 3 It means Figure 2 The diagram shows the 4f lens unit.

[0025] Figure 4 It means Figure 2 The diagram shows a spatial light modulator.

[0026] Figure 5 It is a cross-sectional view of an object used to illustrate the concept of inclined crack formation.

[0027] Figure 6 It is a cross-sectional view of an object used to illustrate the concept of inclined crack formation.

[0028] Figure 7 It is a diagram showing the shape of the laser beam in the spot.

[0029] Figure 8 It is a graph representing the offset of the modulation pattern.

[0030] Figure 9 It is a cross-sectional photograph showing the formation state of the tilted cracks.

[0031] Figure 10 It is a schematic top view of the object.

[0032] Figure 11 It is a cross-sectional photograph showing the formation state of the tilted cracks.

[0033] Figure 12 It is a cross-sectional photograph showing the formation state of the tilted cracks.

[0034] Figure 13 This is a diagram representing an example of a modulation pattern.

[0035] Figure 14 It is a diagram showing the intensity distribution at the entrance pupil of a condenser lens and the shape of the beam of the condenser spot.

[0036] Figure 15 It is a graph showing the observation results of the beam shape of the spot and the intensity distribution of the spot.

[0037] Figure 16 This is a diagram representing an example of a modulation pattern.

[0038] Figure 17 This is a diagram illustrating other examples of asymmetric modulation patterns.

[0039] Figure 18 It is a diagram showing the intensity distribution at the entrance pupil of a condenser lens and the shape of the beam of the condenser spot.

[0040] Figure 19 This is an example of a modulation pattern and a diagram showing the formation of a spot.

[0041] Figure 20 This is a diagram showing the object of the first embodiment.

[0042] Figure 21 This is a diagram illustrating the laser processing steps of the first embodiment.

[0043] Figure 22 It is a diagram showing a semiconductor component obtained from an object.

[0044] Figure 23 It is a diagram showing a semiconductor component obtained from an object.

[0045] Figure 24 This is a diagram showing the object of the second embodiment.

[0046] Figure 25 This is a diagram illustrating the laser processing steps of the second embodiment.

[0047] Figure 26 This is a diagram illustrating the separation process in the second embodiment.

[0048] Figure 27 It is a diagram showing a semiconductor component obtained from an object.

[0049] Figure 28 This is a cross-sectional view showing a variation of the laser processing procedure.

[0050] Figure 29 This is a cross-sectional view showing other variations of the laser processing procedure.

[0051] Figure 30 It is a top view of the object representing the variant.

[0052] Figure 31 This is a diagram showing the object of the third embodiment.

[0053] Figure 32 This is a cross-sectional view showing the laser processing steps of the third embodiment.

[0054] Figure 33 This is a cross-sectional view showing the laser processing steps of the third embodiment.

[0055] Figure 34 This is a cross-sectional view showing the grinding process of the third embodiment. Detailed Implementation

[0056] Hereinafter, an embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the various figures, the same or equivalent parts are sometimes given the same symbols, and repeated descriptions are omitted. Additionally, in the various figures, a rectangular coordinate system defined by the X-axis, Y-axis, and Z-axis is sometimes shown.

[0057] [Laser processing equipment and an overview of laser processing]

[0058] Figure 1 This is a schematic diagram illustrating the structure of a laser processing apparatus according to one embodiment. For example... Figure 1 As shown, the laser processing apparatus 1 includes: a stage 2, a laser irradiation unit 3, a drive unit (moving unit) 4 and 5, and a control unit 6. The laser processing apparatus 1 is used to form a modified region 12 on an object 11 by irradiating the object 11 with a laser L.

[0059] The stage 2, for example, holds the film attached to the object 11, thereby supporting the object 11. The stage 2 can rotate with an axis parallel to the Z direction as its rotation axis. The stage 2 can also move along the X and Y directions respectively. Furthermore, the X and Y directions are first and second horizontal directions that intersect (orthogonal) each other, and the Z direction is the vertical direction.

[0060] The laser irradiation unit 3 focuses a transmissive laser L onto the object 11. If the laser L is focused inside the object 11 supported by the stage 2, the laser L is specifically absorbed at the point corresponding to the focused spot C (e.g., the center Ca described later), forming a modified region 12 inside the object 11. Furthermore, the focused spot C, which will be described in detail later, is the location where the laser beam intensity is highest or a region within a range defined from the center of beam intensity.

[0061] The modified region 12 is a region whose density, refractive index, mechanical strength, and other physical properties differ from the surrounding unmodified region. Examples of modified regions 12 include: melt-treated regions, cracked regions, insulation failure regions, and regions with refractive index changes. The modified region 12 is formed such that cracks extend from the modified region 12 to the incident side of the laser L and to the opposite side. This modified region 12 and the cracks are used, for example, for cutting the object 11.

[0062] As an example, if the stage 2 is moved along the X direction and the focusing spot C is moved relative to the object 11 along the X direction, multiple modification points 12s are formed in a row along the X direction. A modification point 12s is formed by irradiation with a single pulse of laser L. A row of modification regions 12 is a collection of multiple modification points 12s arranged in a row. Adjacent modification points 12s may be connected or separated depending on the relative movement speed of the focusing spot C relative to the object 11 and the repetition frequency of the laser L.

[0063] The drive unit 4 includes: a first moving unit 41 that moves the stage 2 along one direction in a plane intersecting (or orthogonal) to the Z direction; and a second moving unit 42 that moves the stage 2 along other directions in the plane intersecting (or orthogonal) to the Z direction. For example, the first moving unit 41 moves the stage 2 along the X direction, and the second moving unit 42 moves the stage 2 along the Y direction. Additionally, the drive unit 4 rotates the stage 2 about an axis parallel to the Z direction. The drive unit 5 supports the irradiation unit 3. The drive unit 5 moves the laser irradiation unit 3 along the X, Y, and Z directions. With a focused spot C of laser L formed, the stage 2 and / or the laser irradiation unit 3 are moved, thereby causing the focused spot C to move relative to the object 11. That is, the drive units 4 and 5 are moving units that move at least one of the stage 2 and the laser irradiation unit 3 in a manner that moves the focused spot C of laser L relative to the object 11.

[0064] The control unit 6 controls the operation of the stage 2, the laser irradiation unit 3, and the drive units 4 and 5. The control unit 6 includes a processing unit, a storage unit, and an input receiving unit (not shown). The processing unit is configured as a computer device including a processor, memory, storage unit, and communication device. In the processing unit, the processor executes software (programs) loaded into memory, etc., and controls the reading and writing of data in the memory and storage unit, as well as communication via the communication device. The storage unit, such as a hard disk, stores various types of data. The input receiving unit is an interface unit that displays various information and receives various types of input from the user. The input receiving unit constitutes a GUI (Graphical User Interface).

[0065] Figure 2 It means Figure 1 A schematic diagram of the structure of the laser irradiation unit is shown. Figure 2 In the diagram, a virtual line A is shown, representing the predetermined laser processing. (Example) Figure 2 As shown, the laser irradiation unit 3 includes: a light source 31, a spatial light modulator 7, a condenser lens 33, and a 4f lens unit 34. The light source 31 outputs laser light L, for example, via pulse oscillation. Alternatively, the laser irradiation unit 3 may not have a light source 31, but instead be configured to introduce laser light L from outside the laser irradiation unit 3. The spatial light modulator 7 modulates the laser light L output from the light source 31. The condenser lens 33 focuses the laser light L modulated by the spatial light modulator 7 and output from the spatial light modulator 7 toward the object 11.

[0066] like Figure 3As shown, the 4f lens unit 34 has a pair of lenses 34A and 34B arranged in the optical path of the laser L from the spatial light modulator 7 toward the condenser lens 33. The pair of lenses 34A and 34B constitute a telecentric optical system on both sides of the modulation surface 7a of the spatial light modulator 7 and the entrance pupil surface 33a of the condenser lens 33, which are in an imaging relationship. Thus, the image of the laser L at the modulation surface 7a of the spatial light modulator 7 (the image of the laser L modulated by the spatial light modulator 7) is imaged onto the entrance pupil surface 33a of the condenser lens 33. Furthermore, Fs in the figure represents the Fourier surface.

[0067] like Figure 4 As shown, the spatial light modulator 7 is a spatial light modulator (SLM) of reflective liquid crystal on silicon (LCOS). The spatial light modulator 7 is constructed by sequentially stacking a driving circuit layer 72, a pixel electrode layer 73, a reflective film 74, an alignment film 75, a liquid crystal layer 76, an alignment film 77, a transparent conductive film 78, and a transparent substrate 79 on a semiconductor substrate 71.

[0068] The semiconductor substrate 71 is, for example, a silicon substrate. The driving circuit layer 72 forms an active matrix circuit on the semiconductor substrate 71. The pixel electrode layer 73 includes a plurality of pixel electrodes 73a arranged in a matrix along the surface of the semiconductor substrate 71. Each pixel electrode 73a is formed, for example, of a metal material such as aluminum. A voltage is applied to each pixel electrode 73a by the driving circuit layer 72.

[0069] The reflective film 74 is, for example, a dielectric multilayer film. An alignment film 75 is disposed on the surface of the liquid crystal layer 76 on the side of the reflective film 74, and an alignment film 77 is disposed on the surface of the liquid crystal layer 76 opposite to the reflective film 74. Each alignment film 75 and 77 is formed, for example, from a polymer material such as polyimide, and a rubbing treatment is performed, for example, on the contact surface between each alignment film 75 and 77 and the liquid crystal layer 76. The alignment films 75 and 77 align the liquid crystal molecules 76a contained in the liquid crystal layer 76 in a certain direction.

[0070] A transparent conductive film 78 is disposed on the surface of the transparent substrate 79 on the side of the alignment film 77, facing the pixel electrode layer 73 through the liquid crystal layer 76, etc. The transparent substrate 79 is, for example, a glass substrate. The transparent conductive film 78 is formed of, for example, a light-transmitting and conductive material such as ITO. The transparent substrate 79 and the transparent conductive film 78 allow the laser L to pass through.

[0071] In the spatial light modulator 7 configured as described above, if a signal representing a modulation pattern is input from the control unit 6 to the drive circuit layer 72, a voltage corresponding to that signal is applied to each pixel electrode 73a, forming an electric field between each pixel electrode 73a and the transparent conductive film 78. When this electric field is formed, the alignment direction of the liquid crystal molecules 76a in each region corresponding to each pixel electrode 73a changes, and the refractive index in each region corresponding to each pixel electrode 73a changes. This state is characterized by a modulation pattern displayed on the liquid crystal layer 76. The modulation pattern is used to modulate the laser L.

[0072] That is, when the liquid crystal layer 76 displays a modulation pattern, if laser L is incident on the liquid crystal layer 76 from the outside via the transparent substrate 79 and the transparent conductive film 78, reflected by the reflective film 74, and exits from the liquid crystal layer 76 through the transparent conductive film 78 and the transparent substrate 79 to the outside, then laser L is modulated according to the modulation pattern displayed on the liquid crystal layer 76. Thus, according to the spatial light modulator 7, laser L can be modulated (e.g., modulation of the intensity, amplitude, phase, polarization, etc. of laser L) by appropriately setting the modulation pattern displayed on the liquid crystal layer 76. Furthermore, Figure 3 The modulation surface 7a shown is, for example, a liquid crystal layer 76.

[0073] As described above, the laser L output from the light source 31 is incident on the condenser lens 33 via the spatial light modulator 7 and the 4f lens unit 34. The condenser lens 33 focuses the light onto the object 11, thereby forming a modified region 12 and cracks extending from the modified region 12 on the object 11 in the focused spot C. Furthermore, the control unit 6 controls the drive units 4 and 5 to move the focused spot C relative to the object 11, thereby forming the modified region 12 and cracks along the moving direction of the focused spot C.

[0074] [Explanation of insights regarding the formation of sloping cracks]

[0075] Here, the direction of movement (processing travel direction) of the focusing spot C at this time is defined as the X direction. Furthermore, the direction intersecting (or orthogonal) with the incident surface of the laser L of the object 11, i.e., the first surface 11a, is defined as the Z direction. Additionally, the direction intersecting (or orthogonal) with both the X and Z directions is defined as the Y direction. The X and Y directions are along the first surface 11a. Furthermore, the Z direction can also be defined as the optical axis of the focusing lens 33, the optical axis of the laser L focused towards the object 11 via the focusing lens 33.

[0076] like Figure 5As shown, the requirement is that, within the intersecting surface (including the YZ plane E encompassing the Y and Z directions) that intersects the processing direction (i.e., the X direction), a crack is formed obliquely along a line D (here, a line D inclined at a predetermined angle θ from the Y direction) that is inclined relative to the Z and Y directions. Based on the inventor's understanding of the formation of such oblique cracks, a processing example will be shown for explanation.

[0077] Here, modified regions 12a and 12b are formed as modified regions 12. Consequently, the crack 13a extending from modified region 12a and the crack 13b extending from modified region 12b are connected, forming a crack 13 extending obliquely along line D. Here, firstly, as... Figure 6 As shown, a focused spot C1 is formed by setting the first surface 11a of the object 11 as the incident surface of the laser L. On the other hand, a focused spot C2 is formed by setting the first surface 11a as the incident surface of the laser L on a side further from the focused spot C1 than the first surface 11a. At this time, the focused spot C2 is shifted by a distance Sz in the Z direction compared to the focused spot C1, and by a distance Sy in the Y direction compared to the focused spot C1. The distances Sz and Sy, as examples, correspond to the inclination of line D.

[0078] On the other hand, such as Figure 7 As shown, a spatial light modulator 7 is used to modulate the laser L, thereby making the beam shape within the YZ plane E of the focusing spot C (at least the focusing spot C2) an inclined shape that is tilted relative to the Z direction towards the shift direction (in this case, the negative side of the Y direction), at least on the side closer to the first plane 11a than the center Ca of the focusing spot C. Figure 7 For example, it becomes: an arc shape that, on the side closer to the first surface 11a than the center Ca, is inclined to the negative side of the Y direction relative to the Z direction, and on the opposite side closer to the first surface 11a than the center Ca, is also inclined to the negative side of the Y direction relative to the Z direction. Furthermore, the beam shape of the focusing spot C within the YZ plane E refers to the intensity distribution of the laser L of the focusing spot C within the YZ plane E.

[0079] As described above, at least two focusing spots C1 and C2 are shifted in the Y direction, and the beam shape of at least focusing spot C2 (in this case, both focusing spots C1 and C2) is made into an inclined shape, thereby achieving the desired effect. Figure 8 As shown in (a), a slanted, extending crack 13 can be formed. Furthermore, for example, by controlling the modulation pattern of the spatial light modulator 7, it is also possible to simultaneously form focused spots C1 and C2 and perform the formation of modified region 12 and crack 13 by branching the laser L (multi-focus processing), or after forming modified region 12a and crack 13a by forming focused spot C1, modified region 12b and crack 13b can be formed by forming focused spot C2 (single-pass processing).

[0080] Alternatively, other focusing spots can be formed between focusing spot C1 and focusing spot C2, thereby achieving the desired effect. Figure 8 As shown in (b), there is another modified region 12c between modified region 12a and modified region 12b, forming a longer, inclined, extended crack 13.

[0081] Next, an explanation will be given regarding the understanding of how to make the beam shape within the YZ plane E of the focusing spot C tilted. First, the definition of the focusing spot C will be explained in detail. Here, the focusing spot C is a region within a specified range from the center Ca (for example, a range of ±25 μm from the center Ca in the Z direction). The center Ca, as described above, is the position of the highest beam intensity or the centroid of the beam intensity. The centroid of the beam intensity is, for example, the position on the optical axis of the laser L where the beam intensity is located when there is no modulation by a modulation pattern that shifts the optical axis of the laser L, such as a modulation pattern used to branch the laser L. The position of the highest beam intensity or the centroid of the beam intensity can be obtained as follows. That is, the laser L is used to irradiate the object 11 with the output of the laser L reduced to a level that does not form the modified region 12 in the object 11 (lower than the processing threshold). Furthermore, the reflected light of the laser L from the surface opposite to the incident surface of the laser L of the object 11 (here, the second surface 11b) is, for example, directed to... Figure 15 Multiple positions F1 to F7 in the Z direction, as shown, were captured by a camera. Based on the obtained images, the position and center of gravity of the beam with the highest intensity can be determined. Furthermore, the modified region 12 is formed near this center Ca.

[0082] To achieve a tilted beam shape at the focal spot C, a method exists to offset the modulation pattern. More specifically, in the spatial light modulator 7, various patterns are displayed, including: a deformation correction pattern for correcting wavefront distortion, a gerating pattern for laser branching, a split pattern, an astigmatic pattern, a coma aberration pattern, and a spherical aberration correction pattern (patterns overlapping these patterns are shown). Among them, such as Figure 9 As shown, the spherical aberration correction pattern Ps is shifted, thereby adjusting the beam shape of the spot C.

[0083] exist Figure 9In the example, on the modulation surface 7a, the center Pc of the spherical aberration correction pattern Ps is offset by an amount Oy1 relative to the center Lc (beam point) of the laser L in the negative Y direction. As described above, the modulation surface 7a is imaged onto the entrance pupil surface 33a of the condenser lens 33 via the 4f lens unit 34. Therefore, the offset of the modulation surface 7a in the entrance pupil surface 33a becomes an offset in the positive Y direction. That is, in the entrance pupil surface 33a, the center Pc of the spherical aberration correction pattern Ps is offset by an amount Oy2 from the center Lc of the laser L and the center of the entrance pupil surface 33a (which coincides with the center Lc here) in the positive Y direction.

[0084] As described above, the spherical aberration correction pattern Ps is shifted, thereby changing the beam shape of the focusing spot C of the laser L, as follows: Figure 7 As shown, it is deformed into an arc-shaped tilted shape. As described above, shifting the spherical aberration correction pattern Ps is equivalent to imparting coma to the laser L. Therefore, the beam shape of the focusing spot C can also be tilted by including a coma aberration pattern for imparting coma to the laser L in the modulation pattern of the spatial light modulator 7. Furthermore, as the coma aberration pattern, a pattern equivalent to 9 terms of the Zernike polynomial (the Y component of the 3rd coma aberration) can be used, that is, a pattern in which coma occurs in the Y direction.

[0085] Next, I will explain my understanding of the relationship between the crystallinity of object 11 and the cracks 13. Figure 10 This is a schematic top view of the object. Here, object 11 is a silicon wafer (775μm, <100> 1Ω·cm), forming a notch 11d. For this object 11, the first machining example, where the machining travel direction, i.e., the X direction, aligns with the 0° (100) plane, is shown in... Figure 11 (a) illustrates the second machining operation where the X direction is matched with 15°. Figure 11 (b) illustrates the third processing that matches 30°. Figure 12 (a), and the fourth machining process that matches the 45° (100) surface is illustrated in Figure 12 (b) In each processing example, the angle θ between line D in the YZ plane and the Y direction is set to 71°.

[0086] Furthermore, in each processing example, a single-path processing is adopted. In the first path, the focusing spot C1 is moved relatively in the X direction to form the modified region 12a and the crack 13a. Then, in the second path, the focusing spot C2 is moved relatively in the X direction to form the modified region 12b and the crack 13b. The processing conditions for the first and second paths are described below. Additionally, CP below represents the intensity of the focusing correction, and coma (LBA offset Y) represents the amount of offset of the spherical aberration correction pattern Ps in the Y direction in pixel units of the spatial light modulator 7.

[0087] <Path 1>

[0088] Z-axis position: 161μm

[0089] CP: -18

[0090] Output: 2W

[0091] Speed: 530mm / s

[0092] Frequency: 80kHz

[0093] Comet (LBA offset Y): -5

[0094] Y-direction position: 0

[0095] <Path 2>

[0096] Z-axis position: 151μm

[0097] CP: -18

[0098] Output: 2W

[0099] Speed: 530mm / s

[0100] Frequency: 80kHz

[0101] Comet (LBA offset Y): -5

[0102] Y-axis position: 0.014mm

[0103] like Figure 11 and Figure 12 As shown, in any case, a crack 13 can be formed along a line D that is inclined at 71° relative to the Y direction. That is, regardless of the main cleaving surfaces of the object 11, namely the (110) surface, (111) surface, and (100) surface, a crack 13 that extends obliquely can be formed along the desired line D.

[0104] Furthermore, the control of the beam shape used to form this obliquely extending crack 13 is not limited to the examples described above. Next, other examples for making the beam shape oblique will be described. For example... Figure 13 As shown in (a), the laser L can also be modulated using a modulation pattern PG1 that is asymmetrical with respect to the axis Ax along the processing travel direction, i.e., the X direction, so that the beam shape of the focusing spot C becomes tilted. The modulation pattern PG1 includes a grating pattern Ga on the negative side further in the Y direction than the axis Ax, and an unmodulated region Ba on the positive side further in the Y direction than the axis Ax. The axis Ax passes through the center Lc of the laser L beam point in the Y direction and extends along the X direction. In other words, the modulation pattern PG1 only includes the grating pattern Ga on the positive side further in the Y direction than the axis Ax. Furthermore, Figure 13 (b) will Figure 13 The modulation pattern PG1 of (a) is reversed in a manner corresponding to the entrance pupil 33a of the condenser lens 33.

[0105] Figure 14 (a) represents the intensity distribution of laser L at the entrance pupil surface 33a of the condenser lens 33. For example... Figure 14 As shown in (a), by using this modulation pattern PG1, the portion of the laser L incident on the spatial light modulator 7 that is modulated by the grating pattern Ga becomes non-incident at the entrance pupil surface 33a of the condenser lens 33. The result is as follows: Figure 14 (b) and Figure 15 As shown, the beam shape of the focusing spot C in the YZ plane E can be made into an inclined shape that is tilted in one direction relative to the Z direction.

[0106] That is, in this case, the beam shape of the focusing spot C is such that, on the side closer to the first surface 11a than the center Ca of the focusing spot C, it is tilted to the negative side of the Y direction relative to the Z direction, and on the opposite side closer to the first surface 11a than the center Ca of the focusing spot C, it is tilted to the positive side of the Y direction relative to the Z direction. Furthermore, Figure 15 Figures (b) show that: Figure 15 The intensity distribution of laser L at positions F1 to F7 in the Z direction shown in (a) is the result of actual observation by the camera. When the beam shape of the focusing spot C is controlled in this way, similarly to the example above, a slanted, extending crack 13 can be formed.

[0107] Furthermore, as a modulation pattern that is asymmetrical with respect to the axis Ax, it can also be adopted. Figure 16The modulation patterns PG2, PG3, and PG4 are shown. Modulation pattern PG2, on the negative side further in the Y direction than the axis Ax, includes a non-modulation region Ba and a grating pattern Ga arranged sequentially in a direction away from the axis Ax, and on the positive side further in the Y direction than the axis Ax, it includes the non-modulation region Ba. That is, a portion of the region on the negative side of modulation pattern PG2, further in the Y direction than the axis Ax, includes the grating pattern Ga.

[0108] The modulation pattern PG3, on the negative side further in the Y direction than the axis Ax, includes an unmodulated region Ba and a grating pattern Ga arranged sequentially in a direction away from the axis Ax. On the positive side further in the Y direction than the axis Ax, it also includes an unmodulated region Ba and a grating pattern Ga arranged sequentially in a direction away from the axis Ax. In the modulation pattern PG3, the proportions of the unmodulated region Ba and the grating pattern Ga are different on the positive and negative sides (the unmodulated region Ba is relatively narrower on the negative side of the Y direction), thus making it asymmetrical relative to the axis Ax.

[0109] Similar to modulation pattern PG2, modulation pattern PG4 includes a grating pattern Ga in a region on the negative side of the Y direction, further away from the axis Ax. In modulation pattern PG4, the region containing the grating pattern Ga is further incorporated into the X direction. That is, in modulation pattern PG4, the region on the negative side of the Y direction, further away from the axis Ax, includes: a non-modulated region Ba, the grating pattern Ga, and another non-modulated region Ba arranged sequentially in the X direction. Here, the grating pattern Ga is disposed in the region containing the axis Ay along the Y direction, at the center Lc of the laser beam point passing through the X direction.

[0110] By using any of the modulation patterns PG2 to PG4 described above, the beam shape of the focusing spot C can be made to be an inclined shape that is tilted at least on the side closer to the first surface 11a than the center Ca, in the negative direction of the Y direction relative to the Z direction. That is, in order to control the beam shape of the focusing spot C to be tilted at least on the side closer to the first surface 11a than the center Ca, in the negative direction of the Y direction relative to the Z direction, as with modulation patterns PG1 to PG4, or not limited to modulation patterns PG1 to PG4, an asymmetric modulation pattern including the grating pattern Ga can be used.

[0111] Furthermore, the asymmetric modulation pattern used to make the beam shape of the focusing spot C into an inclined shape is not limited to the use of the grating pattern Ga. Figure 17 These are diagrams illustrating other examples of asymmetric modulation patterns. For example... Figure 17 As shown in (a), the modulation pattern PE contains an elliptical pattern Ew on the negative side of the Y direction, which is closer to the axis Ax, and an elliptical pattern Es on the positive side of the Y direction, which is closer to the axis Ax. Furthermore, Figure 17 (b) will Figure 17The modulation pattern PE of (a) is reversed in a manner corresponding to the entrance pupil surface 33a of the condenser lens 33.

[0112] like Figure 17 As shown in (c), elliptical patterns Ew and Es are both patterns used to shape the beam of the focusing spot C in the XY plane, which includes both the X and Y directions, into an elliptical shape with the X direction as its longer side. However, the modulation intensity differs between elliptical patterns Ew and Es. More specifically, the modulation intensity achieved by elliptical pattern Es is greater than that achieved by elliptical pattern Ew. That is, the focusing spot Cs formed by the laser L modulated by elliptical pattern Es has a longer elliptical shape in the X direction compared to the focusing spot Cw formed by the laser L modulated by elliptical pattern Ew. Here, a relatively stronger elliptical pattern Es is positioned on the negative side in the Y direction, closer to the axis Ax.

[0113] like Figure 18 As shown in (a), by using this modulation pattern PE, the beam shape of the focusing spot C within the YZ plane E can be made into an inclined shape that is tilted towards the negative Y direction relative to the Z direction on the side closer to the first surface 11a than the center Ca. In particular, in this case, the beam shape of the focusing spot C within the YZ plane E can also be made such that it is also tilted towards the negative Y direction relative to the Z direction on the opposite side closer to the first surface 11a than the center Ca, forming an arc shape as a whole. Furthermore, Figure 18 Figures (b) show that: Figure 18 The intensity distribution of laser L in the XY plane at positions H1 to F8 in the Z direction shown in (a) is the actual observation result obtained by the camera.

[0114] Furthermore, the modulation pattern used to make the beam shape of the focusing spot C tilted is not limited to the asymmetrical patterns described above. As an example, such modulation patterns can be listed as follows: Figure 19 As shown, a pattern is used to modulate laser L by forming focal points CI at multiple locations within the YZ plane E, and by forming a tilted focal spot C from the entirety of the multiple focal points CI (including the multiple focal points CI). As an example of such a modulation pattern, it can be formed based on an axicon lens pattern. When using this modulation pattern, the modified region 12 itself can also be formed tilted within the YZ plane E. Therefore, in this case, the tilted crack 13 can be correctly formed according to the desired tilt. On the other hand, when using this modulation pattern, there is a tendency for the length of the crack 13 to be shorter compared to the other examples described above. Therefore, by using various modulation patterns according to requirements, the desired processing can be performed.

[0115] Furthermore, the aforementioned focusing point CI is, for example, a point for focusing unmodulated laser light. As described above, according to the inventors' understanding, by shifting at least two modified regions 12a and 12b in the Y and Z directions within the YZ plane E, and by making the beam shape of the focusing spot C in the YZ plane oblique, a crack 13 extending obliquely in the Y direction relative to the Z direction can be formed.

[0116] Furthermore, when controlling the beam shape, high-energy processing can be achieved compared to using diffraction grating patterns to remove a portion of the laser when using spherical aberration to correct pattern offsets, coma aberration patterns, and elliptical patterns. Additionally, this is effective in cases where crack formation is a concern. Furthermore, when using coma aberration patterns, in multifocal processing, the beam shape of only a portion of the focal spot can be tilted. Moreover, when using axicon lens patterns, the use of other patterns is effective when the formation of modified regions is a concern, compared to other patterns.

[0117] [First Implementation]

[0118] Next, the method for manufacturing the semiconductor component according to the first embodiment and the laser processing apparatus will be described. First, a general description will be given. Figure 20 This is a diagram showing the object of the first embodiment. Figure 20 (a) is a top view. Figure 20 (b) is along Figure 20 (a) Cross-sectional view of the XXb-XXb line. Figure 20 The object 11 shown may contain, for example, a semiconductor. Object 11, as an example, is a semiconductor wafer (e.g., a silicon wafer). Object 11 includes a first surface 11a and a second surface 11b opposite to the first surface 11a. Here, multiple semiconductor components 50 are formed by cutting object 11 into a lattice shape. Therefore, in object 11, multiple lines A parallel to the first surface 11a and the second surface 11b are set into a lattice shape as predetermined cutting lines. Lines A may be, for example, virtual lines.

[0119] Here, a pair of lines Aa1 and Aa2, and a pair of lines Ab1 and Ab2 are shown in diagram A. Lines Aa1 and Aa2, when viewed from the Z direction, extend parallel to each other in one direction. Lines Ab1 and Ab2, when viewed from the Z direction, intersect with lines Aa1 and Aa2 and extend parallel to each other in one direction. Here, object 11 is supported on stage 2 with its first surface 11a facing the condenser lens 33.

[0120] In this embodiment, laser L is irradiated relative to the object 11 while moving relative to each focusing spot C of laser L along line A, and modified regions 12 and cracks 13 are formed along each of the lines A. At this time, the focusing spots C move relative to each other in the X direction. That is, the X direction is set as the processing direction. In this embodiment, cracks 13 inclined towards the Y direction relative to the Z direction are formed in the intersection plane (YZ plane E) that intersects (orthogonally) the processing direction, i.e., the X direction. Figure 20 (b) shows the desired extension direction of the crack 13, indicated by line D. Lines D adjacent to each other within the YZ plane E are inclined such that they separate from each other as they move from the second plane 11b toward the first plane 11a. That is, in this embodiment, cracks 13 adjacent to each other in the Y direction are formed in an inclined manner, separating from each other as they move from the second plane 11b toward the first plane 11a.

[0121] Next, the manufacturing method of the semiconductor component and the laser processing apparatus of this embodiment will be specifically described. In this manufacturing method, firstly, an object 11 as described above is prepared, and the object 11 is supported on the stage 2 with the first surface 11a facing the condenser lens 33 and lines Aa1 and Aa2 along the X direction.

[0122] In this state, firstly, a laser processing procedure is performed, wherein, relative to a line Aa1, laser L (lasers L1, L2) is focused on object 11 to form a focused spot C (focusing spot C1, C2) of laser L, and the focused spot C is moved relative to object 11 in the X direction, thereby performing laser processing on object 11.

[0123] More specifically, in the laser processing procedure, the following is performed: a first forming step, wherein, as Figure 21 As shown, the position of the focused spot C1 in the Z direction is set at the first Z position Z1, and the focused spot C1 is moved relative to the line Aa1 extending along the X direction, thereby forming a modified region 12a and a crack 13a extending from the modified region 12a on the object 11. The Z direction is the direction that intersects with the incident surface of the laser L1 of the object 11, i.e., the first surface 11a. In the first forming process, the position of the focused spot C1 in the Y direction is set at the first Y position Y1, and the Y direction is the direction along the first surface 11a and intersects with the X direction.

[0124] Furthermore, in the laser processing step, a second forming step is performed, in which the position of the focusing spot C2 of the laser L2 in the Z direction is set to a second Z position Z2, which is closer to the first surface 11a (incident surface) than the first Z position Z1 of the focusing spot C1 in the first forming step, and the focusing spot C2 is moved relative to the first surface 11a (incident surface) along line Aa1, thereby forming a modified region 12b and a crack 13b extending from the modified region 12b. In the second forming step, the position of the focusing spot C2 in the Y direction is set to a second Y position Y2, which is shifted from the first Y position Y1 of the focusing spot C1. In addition, in the second forming step, the laser L2 is modulated such that the beam shape of the focusing spot C2 in the YZ plane E, which includes the Y and Z directions, is tilted in the direction of the shift at least closer to the first surface 11a than the center of the focusing spot C2. As a result, a crack 13b is formed in the YZ plane E in the direction of the shift. Furthermore, the distance Sy (displacement) between spot C1 and spot C2 in the Y direction is smaller than the Y-direction interval between two adjacent lines Aa1 and Aa2.

[0125] Furthermore, in the first forming process, similarly to the second forming process, the laser L1 is modulated such that the beam shape of the focusing spot C1 within the YZ plane E, which includes the Y and Z directions, is an inclined shape that is at least tilted towards the shift direction from the center of the focusing spot C1 towards the first surface 11a. As described above, cracks 13a and 13b are connected to form cracks 13 that extend obliquely throughout the modified regions 12a and 12b. Cracks 13 may or may not reach the first surface 11a and / or the second surface 11b of the object 11 (this can be appropriately set according to the required processing method).

[0126] The laser processing steps, including these first and second forming steps, can be performed, for example, by controlling each part of the laser processing apparatus 1 through the control unit 6 of the laser processing apparatus 1. That is, in the laser processing apparatus 1 of this embodiment, the control unit 6 can perform the first forming process and the second forming process by controlling the spatial light modulator 7 and the drive units 4 and 5. In the first forming process, the position of the focused spot C1 in the Z direction is set at the first Z position Z1, and the focused spot C1 is moved relative to the object 11 along the line Aa1 extending in the X direction, thereby forming the modified region 12a and the crack 13a. In the second forming process, the position of the focused spot C2 in the Z direction is set at the second Z position Z2, which is closer to the first surface 11a than the first Z position Z1, and the focused spot C2 is moved relative to the object 11 along the line Aa1, thereby forming the modified region 12b and the crack 13b.

[0127] Furthermore, in the first forming process, the control unit 6 sets the position of the focusing spot C1 in the Y direction to the first Y position Y1. In the second forming process, the control unit 6 sets the position of the focusing spot C2 in the Y direction to the second Y position Y2, which has been shifted from the first Y position Y1, and modulates the laser L2 by controlling the modulation pattern displayed on the spatial light modulator 7 so that the beam shape of the focusing spot C2 in the YZ plane E is an inclined shape that is at least closer to the first plane 11a than the center of the focusing spot C2 and tilted in the shift direction. Similarly, in the first forming process, the control unit 6 modulates the laser L1 so that the beam shape of the focusing spot C1 in the YZ plane E is an inclined shape that is at least closer to the first plane 11a than the center of the focusing spot C1 and tilted in the shift direction. Furthermore, the modulation pattern used to make the beam shape an inclined shape is as described above.

[0128] That is, the modulation pattern here includes a coma pattern for imparting coma to the laser L. At least in the second formation process, the control unit 6 can perform a first pattern control to make the beam shape of the focusing spot C2 tilted by controlling the magnitude of the coma generated by the coma pattern. As described above, imparting coma to the laser L has the same meaning as the offset of the spherical aberration correction pattern.

[0129] Therefore, the modulation pattern here may include a spherical aberration correction pattern Ps for correcting the spherical aberration of the laser L. At least in the second forming process, the control unit 6 performs a second pattern control to make the beam shape of the condenser spot C2 tilted by shifting the center Pc of the spherical aberration correction pattern Ps in the Y direction relative to the center of the entrance pupil surface 33a of the condenser lens 33.

[0130] Alternatively, in the second forming process, the control unit 6 may display a modulation pattern that is asymmetrical with respect to the axis Ax along the X direction on the spatial light modulator 7, and perform a third pattern control to make the beam shape of the focusing spot C2 tilted. The modulation pattern that is asymmetrical with respect to the axis Ax may be a modulation pattern PG1 to PG4 that includes a grating pattern Ga, or a modulation pattern PE that includes elliptical patterns Es and Ew (or it may be a pattern that includes both sides).

[0131] That is, the modulation pattern here may include: elliptical patterns Es and Ew, which are used to make the beam shape of the spot C in the XY plane into an elliptical shape with the X direction as the long side. In the second forming process, the control unit 6 displays the modulation pattern PE on the spatial light modulator 7 in a way that the intensity of the elliptical patterns Es and Ew is asymmetrical with respect to the axis Ax along the X direction, and performs the fourth pattern control to make the shape of the spot C2 into an inclined shape.

[0132] Furthermore, in the second forming process, the control unit 6 displays a modulation pattern (e.g., the aforementioned axial conical lens pattern PA) for forming multiple focusing spots C arranged along the shift direction within the YZ plane E on the spatial light modulator 7, and performs a fifth pattern control to make the beam shape of the focusing spot C2 tilted. These various patterns can also be arbitrarily combined and overlapped. That is, the control unit 6 can arbitrarily combine and perform the first to fifth pattern controls.

[0133] Furthermore, the first forming process (first forming process) and the second forming process (second forming process) can be performed simultaneously (multi-focus processing) or sequentially (single-path processing). That is, the control unit 6 can also perform the second forming process after performing the first forming process relative to a line A (e.g., line Aa1). Alternatively, the control unit 6 can display a modulation pattern containing a branching pattern for branching laser L into lasers L1 and L2 on the spatial light modulator 7, thereby performing the first forming process and the second forming process simultaneously relative to a line A (e.g., line Aa1) set on the object 11.

[0134] In the semiconductor component manufacturing method of this embodiment, the above-described laser processing steps are performed on all lines A. As a result, modified regions 12 and cracks 13 are formed along all lines A. Subsequently, in the semiconductor component manufacturing method of this embodiment, a separation step is performed to form the semiconductor component 50 from the object 11 by separating a portion of the object 11.

[0135] More specifically, in the separation process, a portion of the object 11 is separated by using the crack 13 as a boundary, thereby achieving... Figure 22 As shown in (a), a semiconductor component 50 is formed, which includes at least an inclined surface, i.e., a side surface 50s, defined by the crack 13b. Here, the object 11 is cut along line A with the crack 13 as the boundary to form a plurality of semiconductor components 50. The side surface 50s is the outer side surface of the semiconductor component 50, which is the surface that connects a part of the first surface 11a, i.e., the first surface 50a of the semiconductor component 50, and a part of the second surface 11b, i.e., the second surface 50b of the semiconductor component 50, and is inclined relative to the normals of the first surface 50a and the second surface 50b.

[0136] As described above, semiconductor component 50 (refer to) can be obtained. Figure 22 (a)). The above-described method for manufacturing semiconductor components includes the laser processing method of this embodiment. The laser processing method of this embodiment includes the laser processing steps described above.

[0137] In addition, such as Figure 22As shown in (b), a plurality of semiconductor components 50 obtained by the semiconductor component manufacturing method of this embodiment are stacked with the first surface 50a of one semiconductor component 50 facing the second surface 50b of another semiconductor component 50 to form a stacked semiconductor element 50A. Here, the area of ​​the first surface 50a is larger than the area of ​​the second surface 50b. Therefore, in the semiconductor element 50A, a region is formed that is not covered by the second surface 50b of the other semiconductor component 50 (exposed from the second surface 50b) relative to the first surface 50a of one semiconductor component 50. Therefore, the region of the first surface 50a that is not covered by the second surface 50b is used as the setting location for the wire W of wire bonding, so that the semiconductor components 50 can be electrically connected to each other without, for example, using an internal structure such as a through electrode.

[0138] Furthermore, as shown in FIG23(a), for example, multiple semiconductor components 50 can be arranged (laid out) on substrate 51 with their first surfaces 50a facing the same direction to form a semiconductor element 50B. In this case, the side surfaces 50s of adjacent semiconductor components 50 are separated from each other by tilting, so even if a protrusion is generated on the side surface 50s when forming the semiconductor component 50, interference between the protrusions can be avoided between adjacent semiconductor components 50, and multiple semiconductor components 50 can be densely arranged.

[0139] In addition, such as Figure 23 As shown in (b), a semiconductor component 50C can also be formed in the separation process by separating a portion 55 from the object 11, leaving the remaining portion. More specifically, in the separation process, a portion 55 can be removed from the object 11 by etching along the crack 13 and the modified region 12. This yields a semiconductor component 50C containing the inner surface, i.e., the side surface 50s, defined by the crack 13.

[0140] In addition, such as Figure 23 As shown in (c), a chamfered semiconductor component 50D can also be formed. In this case, as an example, during the laser processing step, another modified region is formed on the side closer to the first surface 11a than the modified region 12b and the crack 13b, thereby forming a vertical crack extending along the Z direction from this other modified region in a manner connected to the crack 13. Furthermore, during the separation process, a portion is separated from the object 11 by using the crack 13 and the vertical crack as boundaries to obtain: semiconductor component 50D, which includes an inclined surface, i.e., a side surface 50s, defined by the crack 13, and a vertical surface, i.e., a side surface 50r, defined by the vertical crack. The semiconductor component 50D has a chamfered shape by connecting the inclined side surface 50s between the side surface 50r and the first surface 50a. This prevents notches from forming.

[0141] As explained above, in the semiconductor component manufacturing method (laser processing method) and laser processing apparatus 1 of this embodiment, at the first Z position Z1, the focusing spot C1 of laser L1 is relatively moved along the line Aa1 extending in the X direction to form the modified region 12a and the crack 13a. Furthermore, at the second Z position Z2, which is closer to the first surface 11a than the first Z position Z1, the focusing spot C2 of laser L2 is relatively moved along the line Aa1 to form the modified region 12b and the crack 13b. The focusing spot C1 is designated as the first Y position Y1 in the Y direction when forming the modified region 12a and the crack 13a, and as the second Y position Y2, which has shifted from the first Y position Y1, when forming the modified region 12b and the crack 13b.

[0142] Furthermore, when forming the modified region 12b and the crack 13b, the beam shape of the focusing spot C2 within the YZ plane E is made such that it is an inclined shape, at least in the direction of displacement of the focusing spot C2, closer to the first surface 11a than the center of the focusing spot C2. According to the inventors' understanding, as described above, by shifting the focusing spot C2 in the Y direction and controlling the beam shape of the focusing spot C2, it is possible to make the crack 13b at least an inclined crack in the YZ plane E, tilted in the direction of displacement. That is, an inclined crack can be formed.

[0143] Furthermore, in the laser processing apparatus 1 of this embodiment, the control unit 6 modulates the laser L in the first forming process such that the beam shape of the focusing spot C1 in the YZ plane E is tilted at least in the lateral displacement direction closer to the first plane 11a than the center of the focusing spot C1, thereby forming a crack 13a in the lateral displacement direction within the YZ plane E. Therefore, a crack 13 extending obliquely throughout the modified regions 12a and 12b can be reliably formed.

[0144] Furthermore, in the laser processing apparatus 1 of this embodiment, the modulation pattern may also include a coma pattern for imparting positive coma to the laser L. In this case, the control unit 6 may, during the second forming process, control the magnitude of the coma generated by the coma pattern to perform first pattern control for making the beam shape of the focusing spot C into an inclined shape. According to the inventors' understanding, in this case, the beam shape of the focusing spot C within the YZ plane E is formed as an arc. That is, in this case, the beam shape of the focusing spot C is inclined in the displacement direction further towards the first plane 11a than the center Ca of the focusing spot C, and in the opposite direction of the displacement direction further towards the second plane 11b than the center Ca of the focusing spot C. In this case, inclined cracks inclined in the displacement direction may also be formed.

[0145] Furthermore, in the laser processing apparatus 1 of this embodiment, the modulation pattern may also include a spherical aberration correction pattern Ps for correcting the spherical aberration of the laser L. In this case, the control unit 6 may, during the second forming process, shift the center Pc of the spherical aberration correction pattern Ps in the Y direction relative to the center of the entrance pupil plane 33a of the condenser lens 33, thereby performing a second pattern control to make the beam shape of the condenser spot C into an inclined shape. According to the inventors' understanding, in this case, similar to the case using a coma aberration pattern, the beam shape of the condenser spot C in the YZ plane E can be formed into an arc shape, and inclined cracks tilting in the shift direction can be formed.

[0146] Alternatively, in the laser processing apparatus 1 of this embodiment, the control unit 6 may, during the second forming process, perform a third pattern control to make the beam shape tilted by displaying a modulation pattern that is asymmetrical with respect to the axis Ax along the X direction on the spatial light modulator 7. According to the inventors' understanding, in this case, the beam shape of the focusing spot C within the YZ plane E can be tilted entirely in the displacement direction. In this case, tilted cracks tilting in the displacement direction can also be formed.

[0147] Furthermore, in the laser processing apparatus 1 of this embodiment, the modulation pattern may also include elliptical patterns Es and Ew, which are used to make the beam shape of the focusing spot C in the XY plane, which includes the X and Y directions, an elliptical shape with the X direction as its longer side. In this case, the control unit 6 may, during the second forming process, display the modulation pattern on the spatial light modulator 7 in a manner where the intensity of the elliptical patterns Es and Ew is asymmetrical with respect to the axis Ax along the X direction, and perform a fourth pattern control to make the beam shape of the focusing spot C into an inclined shape. According to the inventors' understanding, in this case, the beam shape of the focusing spot C in the YZ plane E may also be formed into an arc shape, and inclined cracks inclined in the displacement direction may be formed.

[0148] Alternatively, in the laser processing apparatus 1 of this embodiment, the control unit 6 may, during the second forming process, display a modulation pattern for forming a plurality of focusing points CI arranged along the shift direction within the YZ plane E on the spatial light modulator 7, and perform a fifth pattern control to make the beam shape of the focusing spot C containing the plurality of focusing points CI into an inclined shape. According to the inventors' understanding, in this case, inclined cracks tilting in the shift direction may also be formed.

[0149] Alternatively, in the laser processing apparatus 1 of this embodiment, the control unit 6 may perform a second formation process after performing a first formation process relative to a line Aa1 set along the X direction on the object 11. As described above, when the first formation process and the second formation process are performed separately, oblique cracks may also be formed. Furthermore, in the laser processing apparatus 1, the control unit 6 may display a modulation pattern including a branching pattern for branching the laser L on the spatial light modulator 7, thereby simultaneously performing the first formation process and the second formation process relative to a line Aa1 set on the object 11. As described above, even when the first formation process and the second formation process are performed simultaneously, oblique cracks may still be formed.

[0150] [Second Implementation]

[0151] Next, the method for manufacturing the semiconductor component according to the second embodiment and the laser processing apparatus will be described. First, a general overview will be provided. Figure 24 This is a diagram showing the object of the second embodiment. Figure 24 (a) is a top view. Figure 24 (b) is along Figure 24 A cross-sectional view of the XXIb-XXIb line in (a). Figure 24 The object 11 shown may include, for example, a semiconductor. Object 11, as an example, is a semiconductor wafer (e.g., a silicon wafer). Object 11 includes a first surface 11a and a second surface 11b opposite to the first surface 11a. Additionally, object 11 includes a first region 11A containing the first surface 11a and a second region 11B containing the second surface 11b.

[0152] Furthermore, line G in the figure is a virtual line representing the boundary between the first region 11A and the second region 11B. The first region 11A is a predetermined grinding region along the first surface 11a. Here, a circular semiconductor component 60 is cut from the object 11 (the second region 11B). Therefore, when viewed from the Z direction on the object 11, multiple lines Ac extending in a circular shape are set as predetermined cutting lines. Line Ac is, for example, a virtual line.

[0153] Object 11, as an example, is supported on stage 2 with its first surface 11a facing the condenser lens 33. In this embodiment, laser L is irradiated relative to object 11 while the condenser spot C of laser L is moved relative to each other along line A, and modified regions 12 and cracks 13 are formed along each other along line A. At this time, the condenser spot C moves relative to each other in the X direction. That is, the X direction is set as the processing direction. In this embodiment, cracks 13 inclined towards the Y direction relative to the Z direction are formed in the intersecting surface (YZ surface E) that intersects (orthogonally) the processing direction, i.e., the X direction.

[0154] exist Figure 24 (b) shows the desired extension direction of the crack 13, indicated by line D. Lines D adjacent to each other within the YZ plane E are inclined such that they separate from each other as they move from the second surface 11b toward the first surface 11a. In other words, in this embodiment, cracks 13 adjacent to each other in the Y direction within the YZ plane E are formed inclined such that they separate from each other as they move from the second surface 11b toward the first surface 11a. Further, in this embodiment, cracks 13 are formed inclined relative to the Z direction within the YZ plane E, moving away from the reference line Az passing through the center of line Ac (along the Z direction) as they move from the second surface 11b toward the first surface 11a.

[0155] Furthermore, the tilt direction of the cracks can also be reversed. That is, lines D adjacent to each other in the YZ plane E can also be tilted in a manner that they approach each other from the second surface 11b toward the first surface 11a. In other words, cracks 13 adjacent to each other in the Y direction in the YZ plane E can also be formed tilted in a manner that they approach each other from the second surface 11b toward the first surface 11a. Further in other words, cracks 13 tilted relative to the Z direction can also be formed in the YZ plane E in a manner that they approach the reference line Az passing through the center of line Ac (along the Z direction) from the second surface 11b toward the first surface 11a. These variations in tilt direction can be arbitrarily selected according to requirements such as the shape or application of the obtained semiconductor component or the sizing method. For example, as described later (e.g.) Figure 26 As shown in (c), the semiconductor component 60 is appropriately selected in the case of being picked up from the first surface 11a (first surface 60a) side and in the case of being picked up from the second surface 11b (second surface 60b) side.

[0156] Next, the method for manufacturing the semiconductor component and the laser processing apparatus of this embodiment will be specifically described. In this method, firstly, an object 11 as described above is prepared, and the object 11 is supported on the stage 2 with the first surface 11a facing the condenser lens 33. In this state, firstly, a laser processing step (first processing step) is performed, wherein a focusing spot C (focusing spot C1, C2) of laser L (laser L1, L2) is formed on the object 11 relative to a line Ac, and the focusing spot C is moved relative to the object 11 along the line Ac, thereby forming a modified region 12 and a crack 13 extending from the modified region 12 on the object 11 along the line Ac.

[0157] More specifically, in the laser processing procedure, the following is performed: a first forming step, wherein, as Figure 25As shown, the position of the focused spot C1 in the Z direction is set at the first Z position Z1, and the focused spot C1 is moved relative to the line Aa1, thereby forming a modified region (first modified region, fourth modified region) 12a and a crack (first crack) 13a extending from the modified region 12a on the object 11. The Z direction is the direction that intersects with the incident surface of the laser L1 of the object 11, i.e., the first surface 11a. The first Z position Z1 is set as the grinding predetermined region, i.e., the first region 11A. In the first forming process, the position of the focused spot C1 in the Y direction is set at the first Y position Y1, and the Y direction is the direction along the first surface 11a and intersects with the X direction.

[0158] Furthermore, in the laser processing step, a second forming step is performed, in which the position of the focusing spot C2 of the laser L2 in the Z direction is set to a second Z position Z2, which is closer to the first surface 11a (incident surface) than the first Z position Z1 of the focusing spot C1 in the first forming step, and the focusing spot C2 is moved relative to the first surface 11a (incident surface) along the line Ac, thereby forming a modified region (first modified region, fifth modified region) 12b and a crack (first crack) 13b extending from the modified region 12b. The second Z position Z2 is set to grind a predetermined region, namely the first region 11A. In the second forming step, the position of the focusing spot C2 in the Y direction is set to a second Y position Y2, which is shifted from the first Y position Y1 of the focusing spot C1. Furthermore, in the second forming process, the laser L2 is modulated such that the beam shape of the focusing spot C2 within the YZ plane E is tilted in the direction of displacement, at least closer to the first surface 11a than the center of the focusing spot C2. Thus, crack 13b is formed within the YZ plane E in a tilted manner towards the direction of displacement.

[0159] Furthermore, in the first forming step, similarly to the second forming step, the laser L1 is modulated such that the beam shape of the focusing spot C1 within the YZ plane E is an inclined shape that is at least tilted towards the shift direction on the side closer to the first surface 11a than the center of the focusing spot C1. According to the above, cracks 13a and 13b connect to form cracks 13 that extend obliquely throughout the modified regions 12a and 12b. In the illustrated example, crack 13 reaches the first surface 11a and the second surface 11b of the object 11, but it may not.

[0160] The laser processing steps, including these first and second forming steps, can be performed, for example, similarly to the first embodiment, by controlling each part of the laser processing apparatus 1 through the control unit 6. That is, in the laser processing apparatus 1 of this embodiment, the control unit 6 can perform the first forming process and the second forming process by controlling the spatial light modulator 7 and the drive units 4 and 5. In the first forming process, the position of the focused spot C1 in the Z direction is set at the first Z position Z1, and the focused spot C1 is moved relative to the object 11 along the line Ac, thereby forming the modified region 12a and the crack 13a. In the second forming process, the position of the focused spot C2 in the Z direction is set at the second Z position Z2, which is closer to the first surface 11a than the first Z position Z1, and the focused spot C2 is moved relative to the object 11 along the line Ac, thereby forming the modified region 12b and the crack 13b.

[0161] Furthermore, in the first formation process, the control unit 6 sets the position of the focusing spot C1 in the Y direction to the first Y position Y1. In the second formation process, the control unit 6 sets the position of the focusing spot C2 in the Y direction to the second Y position Y2, which has been shifted from the first Y position Y1, and modulates the laser L2 by controlling the modulation pattern displayed on the spatial light modulator 7 so that the beam shape of the focusing spot C2 in the YZ plane E is an inclined shape that is at least closer to the first plane 11a than the center of the focusing spot C2 and tilted in the shift direction. Here, the control unit 6 similarly modulates the laser L1 so that the beam shape of the focusing spot C1 in the YZ plane E is an inclined shape that is at least closer to the first plane 11a than the center of the focusing spot C1 and tilted in the shift direction. Furthermore, the modulation pattern used to make the beam shape an inclined shape is as described above.

[0162] Furthermore, the first forming process (first forming process) and the second forming process (second forming process) can be performed simultaneously (multi-focus processing) or sequentially (single-path processing). That is, the control unit 6 can also perform the second forming process after performing the first forming process relative to a line Ac. Alternatively, the control unit 6 can display a modulation pattern containing a branching pattern for branching laser L into lasers L1 and L2 on the spatial light modulator 7, thereby performing the first forming process and the second forming process simultaneously relative to a line Ac set on the object 11.

[0163] Furthermore, to allow the focusing spots C1 and C2 to move relative to each other in the X direction, for example, when viewed from the Z direction, the focusing spots C1 and C2 are located on line Ac, the control unit 6 can control the drive unit 4 to move the stage 2 in a two-dimensional shape so that the focusing spots C1 and C2 move along the circular line Ac. Alternatively, to allow the focusing spots C1 and C2 to move along line Ac, the control unit 6 can also control the laser irradiation unit 3 to move by controlling the drive unit 5, and the control unit 6 can also control the rotation of the stage 2. The control unit 6 can also perform a combination of these controls.

[0164] In the case where the focusing spots C1 and C2 are moved relative to each other along the circular line Ac during processing, the control can be achieved as follows: within the XY plane, the focusing spots C1 and C2 are made into elongated shapes, and their long sides are tilted relative to the processing direction, i.e., the X direction, and they are rotated. For example, the focusing spots C1 and C2 can be rotated such that the angle between their long sides and the X direction in the XY plane is a first angle (+10° to +35°), or a second angle (-35° to -10°). The choice between the first and second angles depends on the relationship between line Ac and the crystal orientation of the object 11. In this case, in the spatial light modulator 7, as described above, the modulation pattern used to make the beam shape in the YZ plane tilted overlaps with the pattern used to make the beam shape in the XY plane elongated.

[0165] In the semiconductor component manufacturing method of this embodiment, the above-described laser processing steps are performed on all lines Ac. As a result, modified regions 12 and cracks 13 are formed along all lines Ac. That is, in this laser processing step, by relatively moving the focusing spot C along each of the multiple lines Ac, modified regions 12 and cracks 13 are formed along each of the multiple lines Ac.

[0166] Subsequently, in the semiconductor component manufacturing method of this embodiment, a separation step to form the semiconductor component 60 from the object 11 is performed by separating a portion of the object 11. More specifically, before the separation step, firstly, as... Figure 26 As shown in (a) and (b), a grinding process is performed to remove the first region 11A by grinding the object 11 from the first surface 11a side. This removes the modified region 12 and a portion of the crack 13 along with the first region 11A. Additionally, a new first surface 11c (the surface of the remaining second region 11B) is formed on the opposite side of the second surface 11b. That is, here, between the laser processing step and the separation step, the object 11 is ground along the Z direction, thereby performing a grinding process to remove the modified region 12 from the object 11.

[0167] Subsequently, as Figure 26 As shown in (c), a force is applied to a portion separated from the second surface 11b (corresponding to a portion of the semiconductor member 60), and the outer surface of this portion (corresponding to the outer surface 60s of the semiconductor member 60) is held by a clamp, and this portion is separated from the second region 11B. Thus, the semiconductor member 60 is formed. Furthermore, the semiconductor member 60 includes: a portion of the new first surface 11c, namely the first surface 60a, and a portion of the second surface 11b, namely the second surface 60b. The outer surface 60s, which connects the first surface 60a and the second surface 60b, is an inclined surface defined by the crack 13. The outer surface 60s is inclined relative to the normals of the first surface 60a and the second surface 60b.

[0168] Alternatively, a grinding process can be performed after the separation process. That is, after the separation process, the semiconductor component 60 is ground along the Z direction, thereby performing a grinding process to remove the modified region 12 from the semiconductor component 60.

[0169] The above-described methods for manufacturing semiconductor components include the laser processing method of this embodiment. The laser processing method of this embodiment includes the laser processing steps described above.

[0170] In addition, in this embodiment, it is also possible to, for example Figure 27 Semiconductor component 60A shown in (a) or Figure 27 Similar to semiconductor component 60B shown in (b), components with different shapes from semiconductor component 60 are manufactured. Next, an example of manufacturing these semiconductor components 60A and 60B will be described.

[0171] Semiconductor component 60A, similar to semiconductor component 60, includes a first surface 60a, a second surface 60b, and an outer surface 60s. Furthermore, semiconductor component 60A includes an outer surface 60r. The outer surface 60r is parallel to the normals of the first surface 60a and the second surface 60b. The outer surface 60s is connected to the second surface 60b, and the outer surface 60r is connected to the first surface 60a. Thus, the outer surfaces 60s and 60r connect the first surface 60a and the second surface 60b.

[0172] In the case of manufacturing semiconductor component 60A as described above, such as Figure 28As shown, in addition to forming the modified region 12 and the crack 13 described above, a modified region (second modified region) 14 and a crack (second crack) 15 extending from the modified region 14 along the Z direction are also formed relative to the object 11. That is, in the case of forming the semiconductor component 60A, the laser processing step includes: a first processing step for forming the modified region 12 and the crack 13, and a second processing step for forming the modified region 14 and the crack 15. The first processing step is as described above. That is, in the first processing step, the focusing spot C is moved relative to the object 11 along the line Ac, thereby forming the modified region 12 on the object 11 along the line Ac, and forming the crack 13 extending from the modified region 12. The crack 13 is inclined relative to the Z direction in the YZ plane E in such a way that it moves away from the reference line Az passing through the center of the line Ac (along the Z direction) as it moves toward the first plane 11a. Furthermore, in the illustrated example, as modified region 12, another modified region 12c is further formed between modified region 12a and modified region 12b.

[0173] On the other hand, in the second processing step, the laser spot is moved relative to the object 11 along line Ac, thereby forming a modified region 14 on the side closer to the first surface 11a than the crack 13, and forming a crack 15 extending from the modified region 14 along the Z direction towards the crack 13 and the first surface 11a within the YZ plane E. Here, one end of the crack 15 reaches the crack 13, and the other end of the crack 15 reaches the first surface 11a. Furthermore, two modified regions 14 arranged in the Z direction are formed here. Additionally, in... Figure 28 In (a), line K represents the desired direction of extension of the crack 15 (in this case, the Z direction).

[0174] As described above, with the modified regions 12 and 14 and cracks 13 and 15 formed, a separation process is performed to separate a portion of the object 11 along the boundaries of cracks 13 and 15, resulting in a semiconductor component 60A. Crack 13 defines the outer surface 60s of the semiconductor component 60A, and crack 15 defines the outer surface 60r of the semiconductor component 60A. Furthermore, in the first processing step, crack 13 may also be formed in the YZ plane E, inclined relative to the Z direction as it approaches the reference line Az passing through the center of line Ac (along the Z direction) towards the first surface 11a.

[0175] Figure 27Semiconductor component 60B, as shown in (b), similarly includes a first surface 60a, a second surface 60b, an outer surface 60s, and an outer surface 60r, as in semiconductor component 60A. Furthermore, semiconductor component 60B includes an outer surface 60m. The outer surface 60m is an inclined surface that is inclined relative to the normals of the first surface 60a and the second surface 60b. The inclination direction of the outer surface 60m is opposite to the inclination direction of the outer surface 60s. In semiconductor component 60B, the outer surface 60s is connected to the second surface 60b, the outer surface 60m is connected to the first surface 60a, and the outer surface 60r is connected to both the outer surfaces 60s and 60m. Thus, the outer surfaces 60s, 60r, and 60m connect the first surface 60a and the second surface 60b.

[0176] In the case of manufacturing semiconductor component 60B as described above, such as Figure 29 As shown, in addition to forming the modified regions 12 and 14 and cracks 13 and 15, a modified region (third modified region) 16 and a crack (third modified crack) 17 extending obliquely from the modified region 16 are also formed relative to the object 11. That is, in the case of forming the semiconductor component 60B, the laser processing step includes, in addition to the first processing step for forming the modified region 12 and crack 13, and the second processing step for forming the modified region 14 and crack 15, a third processing step for forming the modified region 16 and crack 17.

[0177] The first and second processing steps are as described above. On the other hand, in the third processing step, by moving the laser focus spot relative to the object 11 along line Ac, a modified region 16 is formed closer to the first surface 11a than the intersection of cracks 13 and 15, and a crack 17 extending from the modified region 16 toward crack 15 is formed. Crack 17, within the YZ plane E, is inclined relative to the Z direction in a manner that it approaches the reference line Az toward the first surface 11a. As described above, the inclination direction of crack 17 within the YZ plane E is opposite to the inclination direction of crack 13. Here, one end of crack 17 reaches crack 15, and the other end of crack 17 reaches the first surface 11a. Furthermore, two modified regions 16 arranged within the YZ plane E are formed here. Additionally, in... Figure 29 In (a), line K represents the desired direction of extension of crack 17.

[0178] As described above, with the modified regions 12, 14, 16 and cracks 13, 15, 17 formed, a portion of the object 11 is separated using cracks 13, 15, and 17 as boundaries by performing a grinding and separation process to obtain a semiconductor component 60B. Crack 13 defines the outer surface 60s of the semiconductor component 60B, crack 15 defines the outer surface 60r of the semiconductor component 60B, and crack 17 defines the outer surface 60m of the semiconductor component 60B.

[0179] Furthermore, a portion of the object 11 corresponding to the semiconductor component 60B has a shape with a relatively large diameter on the central side in the Z direction. Therefore, during the separation process, it is difficult to maintain the shape of the object 11 while pulling the portion corresponding to the semiconductor component 60B out of the object 11. Therefore, in this case, a process for cutting the object 11 into multiple parts is required before the separation process. Therefore, as... Figure 30 As shown in (a), when viewed from the Z direction, the line As is set in such a way that it reaches the outer edge of the object 11 from each line Ac.

[0180] Line As is set such that, when viewed from the Z direction, the object 11 is divided into multiple parts by lines As and Ac, connected to line Ac. Furthermore, before the separation process, modified regions and cracks are formed along line As. Therefore, during the separation process, the object 11 is cut along the modified regions and cracks formed along line As, allowing for easy separation of the semiconductor component 60B from the object 11.

[0181] Furthermore, the above examples illustrate the implementation of a grinding process, but such a process is not always necessary. For instance, within the YZ plane, modified regions 12, 14, and 16 are arranged and formed along the Z direction, covering the entire object 11, and cracks 13, 15, and 17 are formed covering these modified regions 12, 14, and 16. Additionally, by applying external force, the object 11 is divided along the boundaries of modified regions 12, 14, 16, and cracks 13, 15, and 17 to obtain a semiconductor component 60B. The resulting semiconductor component 60B includes modified regions (parts of modified regions 12, 14, and 16) exposed on the outer surfaces 60s, 60r, and 60m. In this case, etching can also be performed on the semiconductor component 60B to remove the modified regions exposed on the outer surfaces 60s, 60r, and 60m.

[0182] As explained above, in the semiconductor component manufacturing method (laser processing method) and laser processing apparatus 1 of this embodiment, similarly to the first embodiment, by shifting the focusing spot C2 in the Y direction and controlling the beam shape of the focusing spot C2, it is possible to at least make the crack 13b an inclined crack that is inclined in the shift direction within the YZ plane E. That is, an inclined crack can be formed.

[0183] Furthermore, in the semiconductor component manufacturing method of this embodiment, the focusing spot C of the laser L is moved relative to the object 11 along a circularly extending line Ac, thereby forming a modified region 12 and a crack 13 along the line Ac on the object 11. At this time, a crack 13 inclined relative to the Z direction is formed in the intersection plane (YZ plane E) that intersects with the line Ac. In addition, a portion of the object 11 is separated with the crack 13 as the boundary, thereby forming a semiconductor component 60. Thus, a semiconductor component 60 is obtained, including an outer surface 60s defined by the inclined surface of the crack 13. This inclined outer surface 60s can, for example, be used to protect (without contact with the surface and back surface) the surface and back surface (first surface 60a and second surface 60b) of the semiconductor component 60 while holding the bevel of the semiconductor component 60 during handling. As described above, according to the semiconductor component manufacturing method of this embodiment, a semiconductor component 60 with a bevel can be formed by laser processing.

[0184] Furthermore, in the semiconductor component manufacturing method of this embodiment, multiple lines Ac are provided on the object 11. In the laser processing step, the focusing spot C is moved relative to each of the multiple lines Ac, thereby forming the modified region 12 and the crack 13 along each of the multiple lines Ac. In the separation step, a portion of the object 11 is separated along each of the multiple lines Ac, thereby forming multiple semiconductor components 60 from the object 11. As described above, even when multiple semiconductor components 60 are manufactured from one object 11, a bevel can be formed on each semiconductor component 60.

[0185] Furthermore, in the semiconductor component manufacturing method of this embodiment, the laser processing step may also include: a second processing step, wherein a modified region 14 is formed on the side closer to the first surface 11a than the crack 13 by moving the focusing spot relative to the object 11 along the line Ac, and a crack 15 extending from the modified region 14 toward the crack 13 is formed. Alternatively, in the first processing step, a crack 13 inclined relative to the Z direction may be formed in the YZ plane E in such a way that it moves away from the reference line Az passing through the center of the line Ac as it moves toward the first surface 11a, and in the second processing step, a crack 15 extending along the Z direction may be formed in the YZ plane E. In this case, a semiconductor component 60A comprising an inclined surface (outer surface 60s) defined by the crack 13 and a vertical surface (outer surface 60r) defined by the crack 15 may be formed.

[0186] Furthermore, in the semiconductor component manufacturing method of this embodiment, the laser processing step may also include a third processing step, in which a focusing spot is moved relative to the object 11 along line Ac, thereby forming a modified region 16 closer to the first surface 11a than the intersection of cracks 13 and 15, and forming a crack 17 extending from the modified region 16 toward crack 15. Alternatively, in the third processing step, a crack 17 inclined relative to the Z direction may be formed in the YZ plane E, such that it approaches the reference line Az as it moves toward the first surface 11a. In this case, a semiconductor component 60B may be formed, comprising an inclined surface (outer surface 60s) defined by crack 13, a vertical surface (outer surface 60r) defined by crack 15, and other inclined surfaces (outer surface 60m) defined by crack 17.

[0187] Furthermore, in the semiconductor component manufacturing method of this embodiment, the laser processing step may also include: a second processing step, in which a modified region 14 is formed on the side closer to the first surface 11a than the crack 13 by moving the focusing spot relative to the object 11 along the line Ac, and a crack 15 extending from the modified region 14 toward the crack 13 is formed. Alternatively, in the first processing step, a crack 13 inclined relative to the Z direction may be formed in the YZ plane E in a manner that approaches the reference line Az toward the first surface 11a, and in the second processing step, a crack 15 extending along the Z direction may be formed in the YZ plane E. In this case, a semiconductor component 60A may be formed, comprising an inclined surface (outer surface 60s) defined by the crack 13 and a vertical surface (outer surface 60r) fixed by the crack 15 as its outer surface.

[0188] Furthermore, in the semiconductor component manufacturing method of this embodiment, a grinding step may be included between the laser processing step and the separation step, wherein the modified region 12 and the like are removed from the object 11 by grinding along the Z direction. Alternatively, in the semiconductor component manufacturing method of this embodiment, a grinding step may be included after the separation step, wherein the modified region 12 and the like are removed from the semiconductor component 60 by grinding along the Z direction. In this case, a semiconductor component 60 with the modified region 12 removed can be obtained.

[0189] In addition, it can also be like Figure 30As shown in (b), a single (circular) line Ac is set relative to the object 11. Here, the object 11 has a circular shape when viewed from the Z direction. Furthermore, when viewed from the Z direction, the diameter of line Ac is smaller than the shape of the object 11. Line Ac is set on the object 11 concentrically with its shape when viewed from the Z direction. In this case, during the laser processing step, the focused spot can be moved relative to line Ac, thereby forming modified regions 12, 14, 16 and cracks 13, 15, 17 along line Ac. Additionally, during the separation step, a portion of the object 11 can be separated along line Ac to form a semiconductor component 60 from the object 11. As described above, even when manufacturing a semiconductor component 60 from an object 11, a bevel can be formed on the semiconductor component 60.

[0190] [Third Implementation]

[0191] Next, the method for manufacturing the semiconductor component according to the third embodiment and the laser processing apparatus will be described. First, a general overview will be provided. Figure 31 This is a diagram showing the object of the third embodiment. Figure 31 (a) is a top view. Figure 31 (b) is along Figure 31 (a) Cross-sectional view of line XXXb-XXXb. Figure 31 The object 11 shown may include, for example, a semiconductor. Object 11, as an example, is a semiconductor wafer (e.g., a silicon wafer). Object 11 includes: a first surface 11a and a second surface 11b opposite to the first surface 11a.

[0192] In object 11, multiple lines A parallel to the first surface 11a and the second surface 11b are designated as predetermined cutting lines. The lines A can also be configured as a grid; here, multiple lines A extending in one direction parallel to each other are shown. The lines A are, for example, virtual lines. Object 11 includes a first region 11A containing the first surface 11a and a second region 11B containing the second surface 11b. Furthermore, the line G in the figure is a virtual line representing the boundary between the first region 11A and the second region 11B. The first region 11A is the predetermined grinding region.

[0193] Furthermore, the object 11 includes a semiconductor structure N formed on the second surface 11b. The semiconductor structure N has a structure for functioning each semiconductor component obtained by cutting the object 11 along line A as a semiconductor element. Therefore, line A is configured to pass through the semiconductor structure N. The object 11 is held and supported on the stage 2 by a holding member T on the second surface 11b side, with the first surface 11a facing the condenser lens 33. The holding member T is, for example, a stretchable tape.

[0194] In this embodiment, laser L is irradiated relative to the object 11 while moving relative to each focusing spot C of laser L along line A, and modified regions 12 and cracks 13 are formed along each of line A. At this time, the focusing spots C move relative to each other in the X direction. That is, the X direction is set as the processing direction. In this embodiment, cracks 13 including portions inclined towards the Y direction relative to the Z direction are formed in the intersecting (orthogonal) surface (YZ surface E) that intersects (orthogonally) this processing direction, i.e., the X direction.

[0195] Next, the method for manufacturing the semiconductor component and the laser processing apparatus according to this embodiment will be described in detail. Figure 32 As shown, in this method, firstly, an object 11 as described above is prepared, and the object 11 is supported on a stage 2 with its first surface 11a facing the condenser lens 33 and line A along the X direction. In this state, firstly, a laser processing step is performed, wherein a focusing spot C of laser L (focusing spots C1, C2, and C3 of lasers L1, L2, and L3) is formed on the object 11 relative to a line A, and the focusing spot C is moved relative to the object 11 to perform laser processing on the object 11.

[0196] More specifically, in the laser processing step, a first forming step is performed, wherein the position of a focused spot C1 in the Z direction, which intersects with the incident surface of the laser L of the object 11, i.e., the first surface 11a, is set at a first Z position Z1, and the focused spot C1 is moved relative to the object 11 along a line A extending in the X direction on the first surface 11a, thereby forming a modified region 12a and a crack 13a extending from the modified region 12a in the object 11; and the position of a focused spot C3 in the Z direction is set at a first Z position Z3, and the focused spot C3 is moved relative to the object 11 along line A, thereby forming a modified region 12c and a crack 13c extending from the modified region 12c in the object 11.

[0197] The first Z position Z3 is a position closer to the first surface 11a than the first Z position Z1. Here, the first Z position Z1 is set in the second region 11B, and the first Z position Z3 is set in the predetermined grinding region, i.e., the first region 11A. However, one or both of the first Z positions Z1 and Z3 can be set in the first region 11A or the second region 11B, depending on whether modified regions 12a and 12c are desired to remain after grinding the object 11.

[0198] As described above, in this embodiment, in the first forming step, focusing spots C1 and C3 are formed at each of the plurality of first Z positions Z1 and Z3, which are different from each other in the Z direction, and are moved relative to each other, thereby forming a plurality of modified regions 12a and 12c arranged in the Z direction within the intersection surface (YZ plane E) that intersects line A, and cracks 13a and 13c are formed in a manner that covers the plurality of modified regions 12a and 12c. Furthermore, in the first forming step, the positions of the focusing spots C1 and C3 in the Y direction are set at the first Y position Y1, and cracks 13a and 13c are formed in a manner that extends along the Z direction within the YZ plane E and reaches the second surface 11b. These cracks 13a and 13c, as an example, are along the main cleaving surface of the object 11.

[0199] Next, as Figure 33 As shown, in the laser forming process, after the first forming process, a second forming process is performed, in which the position of the focusing spot C2 in the Z direction of the laser L2 is set to a second Z position Z2, which is closer to the first surface 11a than the first Z position Z3, and the focusing spot C2 is moved relative to the first surface 11a along line A, thereby forming a modified region 12b and a crack 13b extending from the modified region 12b. Here, as described above, the first Z position Z3 is set in the predetermined grinding region, i.e., the first region 11A, therefore, the second Z position Z2 is also set in the first region 11A. In particular, here, the second Z position Z2 is set in such a way that the crack 13b is formed within the first region 11A.

[0200] Furthermore, in the second forming step, the position of the focusing spot C2 in the Y direction is set to a second Y position Y2, which is shifted from the first Y position Y1 of the focusing spots C1 and C3, so that the crack 13b is formed in a manner inclined relative to the Z direction within the YZ plane E. More specifically, in the second forming step, the laser L2 is modulated so that the beam shape of the focusing spot C2 within the YZ plane E is an inclined shape that is at least inclined towards the shift direction from the first surface 11a side closer to the center of the focusing spot C2, thereby forming the crack 13b in the YZ plane E in a manner inclined towards the shift direction. In addition, in the second forming step, the crack 13b is formed in the YZ plane E in a manner inclined relative to the cleaved surface of the object 11.

[0201] The laser processing steps, including these first and second forming steps, can be performed, for example, similarly to the first embodiment, by controlling each part of the laser processing apparatus 1 through the control unit 6. That is, in the laser processing apparatus 1 of this embodiment, the control unit 6 can perform the first forming process and the second forming process by controlling the spatial light modulator 7 and the drive units 4 and 5. In the first forming process, the positions of the focused spots C1 and C3 in the Z direction are set at the first Z positions Z1 and Z3, and the focused spots C1 and C3 are moved relative to each other along line A, thereby forming modified regions 12a and 12c and cracks 13a and 13c on the object 11. In the second forming process, the position of the focused spot C2 in the Z direction is set at the second Z position Z2, which is closer to the first surface 11a than the first Z positions Z1 and Z3, and the focused spot C2 is moved relative to each other along line A, thereby forming modified region 12b and cracks 13b.

[0202] Furthermore, in the first forming process, the control unit 6 sets the positions of the focusing spots C1 and C3 in the Y direction to the first Y position Y1. In the second forming process, the control unit 6 sets the position of the focusing spot C2 in the Y direction to the second Y position Y2, which has been shifted from the first Y position Y1, and modulates the laser L2 by controlling the modulation pattern displayed on the spatial light modulator 7 so that the beam shape of the focusing spot C2 in the YZ plane E is tilted at least in the direction of the shift, closer to the first plane 11a than the center of the focusing spot C2. The modulation pattern used to make the beam shape tilted is as described above. Furthermore, in the first forming process, the formation of the modified region 12a and crack 13a caused by the laser L1, and the formation of the modified region 12c and crack 13c caused by the laser L3, can be performed simultaneously (multi-focus processing) or sequentially (single-path processing).

[0203] Alternatively, a modulation pattern including a branching pattern for branching laser L into lasers L1, L2, and L3 can be displayed on the spatial light modulator 7, thereby simultaneously performing the first forming step (first forming process) and the second forming step (second forming process) relative to a line A set on the object 11. In this case, the modulation pattern is synthesized in a manner that produces coma aberration only for laser L2 among lasers L1, L2, and L3, thereby making only the focusing spot C2 among the focusing spots C1, C2, and C3 have an inclined shape.

[0204] In the semiconductor component manufacturing method of this embodiment, the above-described laser processing steps are performed on all lines A. Therefore, as... Figure 34 As shown in (a), modified regions 12 and cracks 13 are formed along all lines A. Furthermore, cracks 13b and cracks 13c may be unconnected to each other or connected to each other.

[0205] Subsequently, in the method for manufacturing the semiconductor component according to this embodiment, as follows: Figure 34 As shown in (b), the object 11 is ground from the first surface 11a side to remove the first region 11A, thereby removing at least the crack 13b that extends obliquely relative to the Z direction from the object 11. Here, in addition to the crack 13b, the modified regions 12b and 12c are also removed.

[0206] Thus, a semiconductor component 70 is obtained as the remaining second region 11B. The semiconductor component 70 includes a second surface 11b and a new first surface 70a formed by grinding on the opposite side of the second surface 11b. At least one crack 13 is formed in the semiconductor component 70 from the new first surface 70a to the second surface 11b (here, a modified region 12a remains). Therefore, in subsequent processes, the semiconductor component 70 can be separated into multiple other semiconductor components by expanding the holding member T, using the crack 13 as the boundary. The above-described method for manufacturing a semiconductor component includes the laser processing method of this embodiment. The laser processing method of this embodiment includes the laser processing steps described above.

[0207] As explained above, in the semiconductor component manufacturing method (laser processing method) and laser processing apparatus 1 of this embodiment, similarly to the first embodiment, by shifting the focusing spot C2 in the Y direction and controlling the beam shape of the focusing spot C2, at least the crack 13b can be made into an inclined crack that is inclined in the shift direction within the YZ plane E. That is, an inclined crack can be formed.

[0208] Furthermore, in the laser processing method of this embodiment, in the first forming step, the focusing spots C1 and C3 of lasers L1 and L3 are moved relative to each other along line A in the X direction, forming modified regions 12a and 12c on the object 11, and cracks 13a and 13c extending from the modified regions 12a and 12c are formed on the object 11 such that they reach the second surface 11b of the object 11. At this time, the positions of the focusing spots C1 and C3 in the Z direction are set as the first Z positions Z1 and Z3. In addition, at this time, cracks 13a and 13c are formed in the YZ plane E intersecting the X direction along the Z direction.

[0209] Subsequently, in the second forming step, the Z-direction position of the focusing spot C2 of laser L2 is set to a second Z-position Z2, which is closer to the first surface 11a than the first Z-positions Z1 and Z3. The focusing spot C2 is then moved relative to the first surface 11a along line A, forming a modified region 12b and a crack 13b on the object 11. At this time, the Y-direction position of the focusing spot C2 is shifted in the Y-direction compared to the first forming step, and the crack 13b is formed at an angle relative to the Z-direction within the YZ-plane E. According to the inventors' understanding, this allows the crack 13c to connect with the crack 13b and stop extending as it extends towards the first surface 11a along the Z-direction. Therefore, according to this method, the extension of the crack 13 can be suppressed.

[0210] Furthermore, in the laser processing method of this embodiment, the object 11 is provided with a predetermined grinding region (first region 11A) including a first surface 11a. In the first forming step, the first Z position Z1 is set closer to the second surface 11b than the predetermined grinding region. Then, in the second forming step, the second Z position Z2 is set such that a crack 13b is formed inside the predetermined grinding region. Therefore, by grinding the predetermined region, the crack 13b is removed, thereby reducing the influence of the tilted crack.

[0211] Furthermore, in the laser processing method of this embodiment, in the second forming step, the crack 13b is formed at an angle relative to the cleaving surface of the object 11 within the YZ plane E. In this case, the propagation of the crack can be suppressed more reliably.

[0212] Furthermore, in the laser processing method of this embodiment, in the first forming step, each of the plurality of first Z positions Z1, Z3, which are different from each other in the Z direction, forms a focusing spot C1, C3 and moves it relative to each other, thereby forming a plurality of modified regions 12a, 12c arranged in the Z direction within the YZ plane E, and forming cracks 13a, 13c in a manner that covers the plurality of modified regions 12a, 12c. Therefore, by forming longer cracks 13a, 13c in the Z direction, it is possible to process a thicker object 11 appropriately.

[0213] Alternatively, in the laser processing method of this embodiment, the crack 13a may be formed in the first forming step in such a way that it reaches the second surface 11b. As described above, when the crack 13a reaches the second surface 11b, the crack is less likely to extend accidentally, thus suppressing the extension of the crack is more effective.

[0214] Furthermore, in the laser processing method of this embodiment, the first forming step and the second forming step may be performed simultaneously by branching the laser L relative to a line A set on the object 11. As described above, even when the first forming step and the second forming step are performed simultaneously, inclined cracks can be formed.

[0215] Furthermore, the semiconductor component manufacturing method of this embodiment is a method for manufacturing a semiconductor component 70 from a semiconductor-containing object 11. After performing the laser processing step included in the laser processing method described above, the object 11 is ground from the first surface 11a side to remove at least the cracks 13b from the object 11, thereby forming the semiconductor component 70 from the object 11. In this manufacturing method, the laser processing step of the laser processing method described above is performed. Therefore, the accidental propagation of cracks can be suppressed. Therefore, when grinding the object after the laser processing step, the occurrence of chipping can be suppressed. In addition, it is easy to transport to the grinding location.

[0216] Furthermore, in the example described above, the case where the crack 13a is formed in a manner that reaches the second surface 11b was explained in the first forming process. However, the crack 13a may not reach the second surface 11b. In this case, sometimes the crack 13a extends toward and reaches the second surface 11b by forming the modified region 12b and the crack 13b in the second forming process, and sometimes the crack 13a extends toward and reaches the second surface 11b by grinding the object 11 in the grinding process.

[0217] Furthermore, in the above example, the following situation was described: the modified region 12b, which is the starting point of the crack 13b extending obliquely relative to the Z direction, is located closer to the incident surface of the laser L, i.e., the first surface 11a, compared to the modified regions 12a and 12c, which are the starting points of the cracks 13a and 13c extending along the Z direction. However, the modified region 12b and the crack 13b may also be located closer to the second surface 11b than the modified regions 12a and 12c and the cracks 13a and 13c. That is, in the second forming process, the second Z position Z2 may be set closer to the second surface 11b than the first Z position Z1. In this case, the beam shape of the spot C2 in the YZ plane is controlled such that it tilts from the second Y position Y2 of the spot C2 toward the first Y position Y1 of the spot C1 at least on the side closer to the first plane 11a than the center Ca, thereby forming a crack 13b that tilts toward the Z direction relative to the Z direction.

[0218] The above embodiments illustrate one aspect of this disclosure. Therefore, this disclosure is not limited to the above embodiments and can be modified in any way.

[0219] For example, the number of modified regions 12 formed in the Z direction within the YZ plane E can be arbitrarily set according to the thickness of the object 11 or the desired extension of the crack 13.

[0220] Furthermore, the modulation pattern used to modulate the laser L is not limited to the example described above, and can be any shape that allows the beam shape of the focusing spot C to be tilted.

[0221] Furthermore, the above embodiments can be combined with each other arbitrarily, or parts of them can be interchanged. For example, in the case where the modified region 12 and the crack 13 are formed along the circular line Ac as in the second embodiment, a structure for suppressing the propagation of the crack 13 can also be used as in the third embodiment.

[0222] Furthermore, in the above embodiments, an example is given where the object 11 is held by a holding member T such as tape, but the object 11 may also be held by, for example, attaching a silicon substrate or a glass substrate. If a circuit is formed on one side of the object 11, the circuit surfaces may be attached together.

[0223] [Industry availability]

[0224] A method for manufacturing a semiconductor component is provided, which can form a semiconductor component with a beveled surface by laser processing.

[0225] Explanation of symbols

[0226] 1…Laser processing device; 4, 5…Drive unit (moving unit); 6…Control unit; 7…Spatial light modulator; 11…Object; 11a…First surface; 11b…Second surface; 12, 12a, 12b, 12c…Modified area; 13, 13a, 13b, 13c…Cracks; C, C1, C2, C3…Focusing spot; L, L1, L2, L3…Laser; 31…Light source; 33…Focusing lens.

Claims

1. A method for manufacturing a semiconductor component, wherein, have: In a laser processing step, a focused laser spot is formed on an object containing semiconductors. The focused laser spot is then moved relative to the object along a circularly extending line, observed from the Z-direction intersecting the incident plane of the laser. This movement creates modified regions and cracks extending from these modified regions along the line on the object. A separation process, following the laser processing step, separates a portion of the object using the modified region and the cracks as boundaries, thereby forming a semiconductor component from the object. The laser processing step includes: a first processing step, wherein the focused spot is moved relative to the object along the line to form a first modified region along the line, and a first crack extending from the first modified region is formed. In the first processing step, a first crack is formed, which is inclined relative to the Z direction within the intersection plane that intersects the line. In the separation process, a semiconductor component is formed, which includes an inclined surface defined by the first crack as an outer surface. The first processing step includes: a first forming step and a second forming step. In the first forming step, the position of the focusing spot in the Z direction is set to the first Z position, and the focusing spot is moved relative to the line to form the fourth modified region as the first modified region. In the second forming step, the position of the focusing spot in the Z direction is set to a second Z position, which is closer to the incident surface than the first Z position, and the focusing spot is moved relative to the line to form a fifth modified region as the first modified region, and a first crack extending from the fifth modified region is formed. In the first forming step, the position of the focusing spot in the Y direction is set to a first Y position, where the Y direction intersects with the X direction (which is the direction of relative movement of the focusing spot) and the Z direction. In the second forming step, the position of the focusing spot in the Y direction is set to a second Y position that has been shifted from the first Y position, and the laser is modulated such that the beam shape of the focusing spot in the YZ plane, which includes the Y direction and the Z direction, is an inclined shape that is at least inclined towards the shift direction on the side closer to the incident surface than the center of the focusing spot, thereby forming the first crack in the YZ plane in an inclined manner towards the shift direction.

2. The method for manufacturing a semiconductor component according to claim 1, wherein, The object has multiple lines. In the laser processing step, the focusing spot is moved relative to each of the plurality of lines, thereby forming the modified region and the crack along each of the plurality of lines. In the separation process, a portion of the object is separated along each of the plurality of lines, thereby forming a plurality of the semiconductor components from the object.

3. The method for manufacturing a semiconductor component according to claim 1, wherein, The object, when viewed from the Z direction, has a circular shape. When viewed from the Z direction, the object is provided with a line concentric with its shape.

4. The method for manufacturing a semiconductor component according to any one of claims 1 to 3, wherein, The laser processing step, The process includes a second processing step, wherein the focusing spot is moved relative to the object along the line to form a second modified region as the modified region, which is located closer to the incident surface than the first crack, and a second crack extending from the second modified region toward the first crack is formed as the crack. In the first processing step, within the intersecting surface, a first crack is formed at an angle relative to the Z direction, moving away from the reference line passing through the center of the line as it moves towards the incident surface. In the second processing step, the second crack is formed within the intersecting surface, extending along the Z direction.

5. The method for manufacturing a semiconductor component according to claim 4, wherein, The laser processing step, The process includes a third processing step, wherein the focusing spot is moved relative to the object along the line to form a third modified region as the modified region, which is located closer to the incident surface than the intersection of the first and second cracks, and a third crack extending from the third modified region toward the second crack is formed as the crack. In the third processing step, within the intersecting surface, the third crack is formed in a manner that moves closer to the reference line as it approaches the incident surface.

6. A method for manufacturing a semiconductor component according to any one of claims 1 to 3, wherein, The laser processing step includes a second processing step, wherein the focused spot is moved relative to the object along the line to form a second modified region as the modified region, which is located closer to the incident surface than the first crack, and a second crack extending from the second modified region toward the first crack is formed as the crack. In the first processing step, within the intersecting surface, a first crack is formed at an angle relative to the Z direction, such that it approaches the reference line passing through the center of the line as it moves toward the incident surface. In the second processing step, the second crack is formed within the intersecting surface, extending along the Z direction.

7. The method for manufacturing a semiconductor component according to any one of claims 1 to 3, wherein, Between the laser processing step and the separation step, there is also a grinding step, wherein the object is ground along the Z direction to remove the modified region from the object.

8. The method for manufacturing a semiconductor component according to claim 4, wherein, Between the laser processing step and the separation step, there is also a grinding step, wherein the object is ground along the Z direction to remove the modified region from the object.

9. The method for manufacturing a semiconductor component according to claim 5, wherein, Between the laser processing step and the separation step, there is also a grinding step, wherein the object is ground along the Z direction to remove the modified region from the object.

10. The method for manufacturing a semiconductor component according to claim 6, wherein, Between the laser processing step and the separation step, there is also a grinding step, wherein the object is ground along the Z direction to remove the modified region from the object.

11. A method for manufacturing a semiconductor component according to any one of claims 1 to 3, wherein, Following the separation process, a grinding process is further included, wherein the semiconductor component is ground along the Z direction to remove the modified region from the semiconductor component.

12. The method for manufacturing a semiconductor component according to claim 4, wherein, Following the separation process, a grinding process is further included, wherein the semiconductor component is ground along the Z direction to remove the modified region from the semiconductor component.

13. The method for manufacturing a semiconductor component according to claim 5, wherein, Following the separation process, a grinding process is further included, wherein the semiconductor component is ground along the Z direction to remove the modified region from the semiconductor component.

14. The method for manufacturing a semiconductor component according to claim 6, wherein, Following the separation process, a grinding process is further included, wherein the semiconductor component is ground along the Z direction to remove the modified region from the semiconductor component.

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