Multi-charged particle beam mapping method, multi-charged particle beam mapping device, and computer-readable recording medium

Abstract

Provided are a multi-charged particle beam drawing method, a multi-charged particle beam drawing apparatus, and a computer-readable recording medium, which can improve the drawing accuracy of a multi-beam. The multi-charged particle beam drawing method of the present embodiment includes: a data path for inputting control data for controlling the on or off of each beam of a multi-beam to a unit array on a blanking aperture array substrate, dividing, according to each input-output circuit of a plurality of input-output circuits and at least any one of a plurality of wiring groups concentrated based on the inter-wiring distance of a plurality of wirings to the plurality of input-output circuits, into a plurality of first blocks, for each of the plurality of first blocks after the division, calculating a first shift amount of each of the plurality of first blocks of the multi-beam due to at least any one of an electric field and a magnetic field, and a process of correcting the irradiation position or the irradiation amount of the multi-beam based on the first shift amount and irradiating each beam of the multi-beam.

Description

[0001] This application is based on Japanese Patent Application 2021-149609 (filed on September 14, 2021) and enjoys priority of that application. This application incorporates the entire contents of that basic application by reference. Technical Field

[0002] This invention relates to a method for depicting multiple charged particle beams, an apparatus for depicting multiple charged particle beams, and a computer-readable recording medium. Background Technology

[0003] With the increasing integration of LSIs, the linewidths required for semiconductor devices are becoming smaller year by year. To form the desired circuit patterns on semiconductor devices, the following method is used: a reduction projection type exposure apparatus is used to reduce and transfer a high-precision original pattern (mask, or especially an intermediate mask used in steppers and scanners) formed on a glass substrate, such as a light-shielding film, onto the wafer. In the fabrication of this high-precision original pattern, electron beam lithography, a technique that forms resist patterns using an electron beam drawing apparatus, is employed.

[0004] Compared to drawing with a single electron beam, a multi-beam drawing apparatus can irradiate a large number of beams at once, thus significantly increasing processing power. In a multi-beam drawing apparatus that utilizes a blanking aperture array substrate, for example, an electron beam emitted from an electron gun is passed through a shaped aperture array substrate with multiple openings to form multiple beams (multiple electron beams). The multiple beams pass through blanking devices corresponding to the blanking aperture array substrate. The blanking aperture array substrate has electrode pairs for individually deflecting the beams, with openings formed between the electrode pairs for beam passage. By controlling the electrode pairs (blanking devices) to the same potential or different potentials, the passing electron beams are blanked. The electron beams deflected by the blanking devices are shielded, and the undeflected electron beams irradiate the substrate.

[0005] In multi-beam mapping, the total beam current is relatively large, which may lead to a deterioration in mapping accuracy due to the Coulomb effect. For example, due to the repulsive force between electrons, beam position shift and focus shift may occur on the sample surface. To suppress beam position shift caused by the Coulomb effect, a method has been proposed, for example, as follows: the blanking aperture array substrate is divided into multiple blocks, and a table showing the relationship between the blanking density (density of the open beam) and the position shift of each block is prepared in advance. Based on the parameters obtained from the table, shift correction, distortion correction, etc. are performed (see, for example, Japanese Patent Application Laid-Open No. 2017-028284).

[0006] In the method using the above table, to improve the accuracy of the correction, it is necessary to increase the number of block divisions of the blanking aperture array substrate or increase the blanking density. However, if the conditions are increased, the following problems arise: table fabrication takes time, and the time required to obtain parameters from the table becomes longer.

[0007] Among the causes of beam position deviation are not only the Coulomb effect acting between beams, but also the electric field from the accumulated charge of the capacitors on the control circuit mounted on the blanking aperture array substrate, and the magnetic field generated by the drive current of the control circuit, which are difficult to correct using conventional methods. Furthermore, it is known that the effects of these electric and magnetic fields vary depending on the location of the input and output circuits configured on the control circuit and the location of the wiring connected to them. Summary of the Invention

[0008] This invention provides a method for depicting multiple charged particle beams, a device for depicting multiple charged particle beams, and a computer-readable recording medium that can improve the depiction accuracy of multiple beams.

[0009] One aspect of the present invention, a method for depicting multiple charged particle beams, includes: dividing a data path used to input control data for controlling the on or off of each beam of a multi-beam array to a cell array on a blanking aperture array substrate into a plurality of first blocks based on at least one of a plurality of input / output circuits and a plurality of wiring groups concentrated based on the wiring distance between a plurality of wirings to the plurality of input / output circuits; calculating, for each of the plurality of first blocks, a first displacement amount of the multi-beam in each of the plurality of first blocks caused by at least one of an electric field and a magnetic field; and correcting the irradiation position or irradiation amount of the multi-beam based on the first displacement amount and irradiating each beam of the multi-beam array. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of a multi-charged particle beam mapping apparatus according to an embodiment of the present invention.

[0011] Figure 2 This is a top view of the shaped aperture array component.

[0012] Figure 3 This is a schematic diagram of the blanking aperture array substrate.

[0013] Figure 4 It is a diagram showing the composition of input / output circuits and unit array circuits.

[0014] Figure 5 This is a schematic diagram of the individual blanking mechanism.

[0015] Figure 6 This is a diagram illustrating an example of the irradiation steps within one emission cycle.

[0016] Figure 7 This is a diagram illustrating an example of beam activation timing.

[0017] Figure 8 This is a diagram illustrating an example of block segmentation of a blanking aperture array substrate.

[0018] Symbol Explanation

[0019] 40 Individual concealment mechanisms

[0020] 50 Blanking Device

[0021] 100 Drawing device

[0022] 110 Control Computer

[0023] 111 Data Processing Department

[0024] 112 Depicting Control Department

[0025] 113 Calibration Calculation Department Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described based on the accompanying drawings. In the embodiments, an electron beam configuration will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and may also be an ion beam, etc.

[0027] Figure 1 This is a schematic diagram depicting the apparatus of an embodiment. (e.g.) Figure 1 As shown, the drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing apparatus 100 is an example of a multi-charged particle beam drawing apparatus. The drawing unit 150 includes an electron microscope tube 102 and a drawing chamber 103. An electron gun 201, an illumination lens 202, a forming aperture array component 203, a blanking aperture array substrate 204, a reducing lens 205, a limiting aperture component 206, an objective lens 207, and a deflector 208 are disposed within the electron microscope tube 102. Furthermore, astigmatism correction coils (not shown) may also be disposed within the electron microscope tube 102.

[0028] An XY stage 105 is arranged inside the drawing chamber 103. A substrate 101, on which the drawing object is to be drawn, is arranged on the XY stage 105. A photoresist that will be exposed by an electron beam is coated on the upper surface of the substrate 101. The substrate 101 may be, for example, a substrate (mask blank) to be processed into a mask, or a semiconductor substrate (silicon wafer) to be processed into a semiconductor device. Alternatively, the substrate 101 may be a mask blank coated with photoresist that has not yet been drawn. In addition, a reflector 210 for stage position determination is arranged on the XY stage 105.

[0029] The control unit 160 includes a control computer 110, a deflection control circuit 130, a table position detector 139, and storage units 140 and 142. Drawing data is input from an external source into the storage unit 140 and stored therein. The drawing data typically defines information about multiple graphic patterns used for drawing. Specifically, for each graphic pattern, a graphic code, coordinates, and dimensions are defined. Function data is stored in the storage unit 142. The functions represented by the function data will be described later.

[0030] The control computer 110 includes a data processing unit 111, a drawing control unit 112, and a correction calculation unit 113. Each part of the control computer 110 can be constructed by hardware such as circuits, or by software such as programs that enable the control computer 110 to perform these functions. Alternatively, it can be constructed by a combination of hardware and software.

[0031] The worktable position detector 139 illuminates the laser and receives the reflected light from the reflector 210, using the principle of laser interferometry to detect the position of the XY worktable 105.

[0032] Figure 2 This is a conceptual diagram showing the structure of the shaped aperture array component 203. (Example) Figure 2 As shown, in the shaped aperture array component 203, a plurality of openings 203a are formed along the longitudinal direction (y direction) and the transverse direction (x direction) at a predetermined spacing. Each opening 203a is formed, for example, as a rectangle or a circle with the same (approximately the same) size and shape.

[0033] An electron beam 200 emitted from the electron gun 201 (emission section) illuminates the entire shaped aperture array component 203 approximately perpendicularly through an illumination lens 202. The electron beam 200 illuminates the area containing all the openings 203a. A portion of the electron beam 200 passes through the multiple openings 203a of the shaped aperture array component 203, while the remaining beam is blocked by the shaped aperture array component 203. The electron beam 200 passes through the multiple openings 203a, thereby forming multiple electron beams (multi-beams) 20a to 20e, for example, in a rectangular shape.

[0034] On the blanking aperture array substrate 204, beam passage holes are formed at positions consistent with the arrangement of each opening 203a of the formed aperture array component 203. A blanking device 50, consisting of a pair of electrodes 51, 52, is disposed in each passage hole (see reference). Figure 5 One electrode 52 is grounded and kept at the ground potential, while the other electrode 51 is switched to the ground potential or a potential other than the ground potential. This switches the cutoff of the beam deflection through the aperture, thereby performing blanking control.

[0035] When the beam is on, the opposing electrodes 51 and 52 of the blanking device 50 are controlled to the same potential, and the blanking device 50 does not deflect the beam. When the beam is off, the opposing electrodes 51 and 52 of the blanking device 50 are controlled to different potentials, and the blanking device 50 deflects the beam. Multiple blanking devices 50 perform blanking deflection on corresponding beams in multiple beams passing through multiple openings 203a of the shaped aperture array component 203, thereby enabling the beam to be controlled into an off state.

[0036] The multiple beams 20a to 20e after passing through the blanking aperture array substrate 204 are reduced by the reducing lens 205 and travel toward the central opening formed in the limiting aperture member 206.

[0037] Here, the beam controlled to be in the beam-off state is deflected by the blanking device 50 and passes through a path outside the opening of the aperture limiting member 206, thus being blocked by the aperture limiting member 206. On the other hand, the beam controlled to be in the beam-on state is not deflected by the blanking device 50 and thus passes through the opening of the aperture limiting member 206. In this case, the beam ideally passes through the same point. The beam path is adjusted by the alignment coil (not shown) so that this point is located within the opening at the center of the aperture limiting member 206. In this way, blanking control is performed by opening or closing the blanking device 50, controlling the opening or closing of the beam.

[0038] The aperture limiting component 206 blocks each beam that has been deflected into a beam-cut-off state by multiple blanking devices 50. Then, using the beams formed from the time they become beam-on until they become beam-cut-off, after passing through the aperture limiting component 206, a multi-beam emission is formed.

[0039] The multiple beams after being confined by the aperture component 206 are focused by the objective lens 207 to form a pattern image with the desired reduction ratio. The individual beams (the entire multiple beams) after being confined by the aperture component 206 are deflected in the same direction by the deflector 208 and irradiate the desired position on the substrate 101.

[0040] While the XY stage 105 moves continuously, at least during the period when the beam is irradiated onto the substrate 101, the deflector 208 controls the beam irradiation position on the substrate 101 to follow the movement of the XY stage 105. Ideally, the multiple beams irradiated at one time are arranged on the substrate 101 with a spacing obtained by multiplying the arrangement spacing of the plurality of openings 203a of the shaped aperture array component 203 by the aforementioned desired reduction rate.

[0041] like Figure 3As shown, the blanking aperture array substrate 204, which performs blanking control on each of the multiple beams, includes input / output circuits 31 (31a, 31b) and unit array circuits 34, each having a blanking aperture and an electrode. The input / output circuits 31 receive control signals from the deflection control circuit 130.

[0042] A unit array circuit 34 is disposed in the center of the blanking aperture array substrate 204, and two input / output circuits 31a and 31b are disposed across the unit array circuit 34. The data path D of the control signal from the deflection control circuit 130 to the blanking aperture array substrate 204 is... L D R It is divided into two systems.

[0043] like Figure 4 As shown, the cell array circuit 34 has multiple cells constituting individual blanking mechanisms 40. Each individual blanking mechanism 40 corresponds to one blanker 50. The input / output circuit 31 converts the control signal received from the deflection control circuit 130 into a beam on / off signal and outputs it to the cell array circuit 34. For example, input / output circuit 31a outputs a beam on / off signal to the individual blanking mechanism 40 located on one half of the cell array circuit 34, and input / output circuit 31b outputs a beam on / off signal to the individual blanking mechanism 40 located on the other half.

[0044] Multiple selectors 320 (signal splitters) are provided in the input / output circuit 31. The selector 320 receives illumination time control data defining the illumination time of each emission of each beam via amplifier 310, and outputs beam on / off signals from the corresponding output lines. Multiple individual blanking mechanisms 40 are connected in series on each output line.

[0045] For example, selector 320 has eight output lines row1 to row8, and each output line is connected to 256 individual blanking mechanisms 40. By configuring 64 selectors 320 in the input and output circuits 31a and 31b respectively, beam start-up and cutoff signals can be transmitted to 512×512 individual blanking mechanisms 40 in the unit array circuit 34.

[0046] The configuration of the separate blanking mechanism 40 for outputting the beam on / off signal in input / output circuit 31a and the separate blanking mechanism 40 for outputting the beam on / off signal in input / output circuit 31b is not limited to... Figure 4 The configuration shown is as follows. For example, the output lines from input / output circuit 31a and input / output circuit 31b can be configured alternately. Alternatively, the separate blanking mechanism 40 for outputting the beam on / off signal from input / output circuit 31a and the separate blanking mechanism 40 for outputting the beam on / off signal from input / output circuit 31b can also be configured alternately.

[0047] like Figure 5 As shown, the separate blanking mechanism 40 includes a shift register 41, a pre-buffer 42, a buffer 43, a data register 44, a NAND circuit 45, and an amplifier 46. The shift register 41 transfers data output from the shift register of the preceding unit to the shift register of the following unit according to the clock signal (SHIFT).

[0048] The pre-buffer 42 stores the beam on / off signal for this unit output from the shift register 41 according to the clock signal (LOAD1).

[0049] Buffer 43 acquires and holds the output value of pre-buffer 42 according to the clock signal (LOAD2).

[0050] Data register 44 acquires and holds the output value of buffer 43 according to the clock signal (LOAD3).

[0051] The output signal of the data register 44 is input to the NAND circuit 45, as well as the transmit enable signal (SHOT_ENABLE). The output signal of the NAND circuit 45 is provided to the electrode 51 of the blanking circuit 50 via the amplifier 46 (driver amplifier).

[0052] When both the output signal of data register 44 and the transmit enable signal are high, the output of NAND circuit 45 is low, electrodes 51 and 52 are at the same potential, and blanking circuit 50 does not deflect the beam, thus the beam is turned on. When at least one of the output signal of data register 44 and the transmit enable signal is low, the output of NAND circuit 45 is high, electrodes 51 and 52 are at different potentials, blanking circuit 50 deflects the beam, and the beam is turned off.

[0053] The transmit enable signal is input to the NAND circuit 45 of all individual blanking mechanisms 40, and by making the transmit enable signal low, all beams can be cut off.

[0054] When the transmit enable signal is kept high, the output of data register 44 switches the beam on or off. That is, when the irradiation time control data is 1 (high), the beam on / off signal becomes the on signal, and when the irradiation time control data is 0 (low), the beam on / off signal becomes the off signal.

[0055] In multi-beam mapping, a fixed emission period consistent with the maximum illumination dose is used. Each beam is activated only for the desired illumination time within one emission period and deactivated for the remaining time. For example, the grayscale value N is calculated by dividing the illumination time T by the quantization unit Δ. The quantization unit Δ can be set in various ways, such as being defined as 1 ns. The data that converts the grayscale value N into a binary value of n bits is the illumination time control data.

[0056] For example, if N = 50, then 50 = 2. 5 +2 4 +2 1 Therefore, when converted to an 8-bit binary value, the irradiation time control data is "00110010". Similarly, if N = 100, the irradiation time control data is "01100100".

[0057] The first digit of the irradiation time control data represents irradiation time 1Δ. The second digit represents irradiation time 2Δ. The third digit represents irradiation time 4Δ. The fourth digit represents irradiation time 8Δ. The fifth digit represents irradiation time 16Δ. The sixth digit represents irradiation time 32Δ. The seventh digit represents irradiation time 64Δ. The eighth digit represents irradiation time 128Δ.

[0058] One emission cycle is divided into n illumination steps, the same number of bits as the number of bits in the illumination time control data. Each illumination step has an illumination time corresponding to a bit. For example, illuminating sequentially starting from the bit with the largest number of bits, assuming Δ = 1 ns, such as... Figure 6 As shown, the first irradiation step was 128 ns. The second irradiation step was 64 ns. The third irradiation step was 32 ns. The fourth irradiation step was 16 ns. The fifth irradiation step was 8 ns. The sixth irradiation step was 4 ns. The seventh irradiation step was 2 ns. The eighth irradiation step was 1 ns.

[0059] When N=100, the irradiation time control data is "01100100", such as Figure 7 As shown, the beam is turned on in the second (64ns), third (32ns), and sixth (4ns) irradiation steps, and turned off in the first, fourth, fifth, seventh, and eighth irradiation steps.

[0060] Thus, as illustrated in one example, in multi-beam mapping, a emission cycle is divided into multiple illumination steps, in which the beam is switched on or off to achieve the desired illumination time. For instance, the illumination times of the multiple illumination steps are different and proportional to powers of 2.

[0061] On the other hand, in the multi-beam design, the input / output circuits 31a and 31b mounted on the blanking aperture array substrate 204 are equipped with various circuits such as power supply circuits, logic circuits, and switching circuits. During operation, in addition to the control signal from the deflection control circuit, various currents also flow through them. Therefore, the beam on / off signals sent from the input / output circuits 31a and 31b to the output lines row1 to 8 do not correspond one-to-one with the input currents input to the input / output circuits 31a and 31b.

[0062] In the input / output circuits 31a and 31b mounted on the blanking aperture array substrate 204, various currents flow during operation. At this time, the electric field generated by the accumulated charge from the capacitors disposed on the input / output circuits 31a and 31b, and the magnetic field generated by the current in the circuits, affect the accuracy of the beam irradiation position. Therefore, in this embodiment, the overall shift of the multiple beams is calculated based on the shift amount of each of the multiple input / output circuits 31a and 31b disposed on the blanking aperture array substrate 204, calculated from the circuit current (power supply current, operating current based on the beam on / off signal, etc.) from the deflection control circuit 130 to each of the multiple input / output circuits 31a and 31b that affects the electric and magnetic fields, and the irradiation position is corrected. Alternatively, the pattern resolution position can be adjusted by adjusting the irradiation amount of each beam.

[0063] As described above, in this embodiment, the positions of the input / output circuits 31a and 31b, which receive the control signal from the deflection control circuit 130 to the blanking aperture array substrate 204, and the wiring positions to the input / output circuits 31a and 31b, are divided into two systems. Therefore, the circuit current is calculated by dividing each system into two blocks.

[0064] Then, for example, the data processing unit 111 imagines dividing the depiction area of ​​the substrate 101 into multiple grid regions. The size of the grid region is, for example, the same as the size of one beam, and each grid region becomes a pixel (unit illumination area). The data processing unit 111 reads the depiction data from the storage unit 140 and calculates the pattern area density ρ of each pixel using the pattern defined in the depiction data.

[0065] Next, the data processing unit 111 multiplies the pattern area density ρ by the reference irradiation amount and a correction coefficient used to correct for proximity effects, etc., to calculate the irradiation amount of the beam irradiating each pixel. The data processing unit 111 divides the irradiation amount by the current density to calculate the irradiation time.

[0066] Next, the data processing unit 111 allocates the irradiation time to multiple irradiation steps, generating irradiation time control data. For example, the data processing unit 111 divides the irradiation time by a quantized unit to calculate the grayscale value t (integerized irradiation time). Figure 7 In the example shown, the data processing unit 111 calculates the result of the sequence (2). 7 2 6 2 5 2 4 2 3 2 2 2 1 2 0 The corresponding on / off flag column is used as irradiation time control data.

[0067] The data processing unit 111 calculates, in units of a predetermined time, the number of values ​​of 1 (high) in the irradiation time control data sent from the deflection control circuit 130 to the input / output circuit 31a, as the data transmission quantity. Furthermore, the data processing unit 111 calculates, in units of a predetermined time, the number of values ​​of 1 (high) in the irradiation time control data sent from the deflection control circuit 130 to the input / output circuit 31b, as the data transmission quantity. The data transmission quantity can be calculated using all signal lines transmitting the irradiation time control data, or it can be calculated by periodically excluding a portion of the signal lines. Additionally, the data transmission quantity can be calculated in units of a predetermined time, or in units of data transmission time divided into predetermined data segments. The operating current depends on the transmission quantity and transmission time of this control data.

[0068] Beforehand, the input and output circuits 31a and 31b are each treated as a block to divide the data path (data path D). L D R The circuit current is allocated to each block separately, and the centroid of the activated beam is calculated to determine the shift amount. Alternatively, for multiple wirings connected to these input / output circuits, the wiring groups with closer wiring distances (input / output positions) or average wiring distances to the input / output circuits can be grouped into blocks based on the wiring distances. However, the wiring segmentation method is not limited to this. The shift amount X is calculated as the offset of the centroid of the activated beam within the region from the center of the area on one side of the unit array circuit 34 that receives the beam activation / deactivation signal from the individual blanking mechanism 40 of the input / output circuit 31a. L Y L Furthermore, the offset of the centroid of the activated beam within the region, from the center of the region on the other half of the cell array circuit 34 that receives the beam activation cutoff signal from the input / output circuit 31b, is calculated as the shift amount X. R YR .

[0069] By setting the circuit current I as a variable, we can obtain the functions f and g for calculating the shift. This becomes X. L / R =f(I L / R ), Y L / R =g(I L / R The data for functions f and g are stored in storage unit 142.

[0070] During the drawing process, the correction calculation unit 113 uses the circuit current calculated by the data processing unit 111 and the function retrieved from the storage unit 142 to determine the shift amount X. L / R Y L / R .

[0071] The correction calculation unit 113 calculates the displacement X of each block. L and X R Combined, the displacement X in the x-direction of the entire blanking aperture array substrate is calculated. Furthermore, the correction calculation unit 113 calculates the displacement Y of each block. L and Y R Combined, calculate the overall displacement Y in the y-direction of the blanking aperture array substrate.

[0072] There are no restrictions on the method of combination; for example, it is possible to use X = aX. L +bX R Such a linear combination calculates the shift amount X. Alternatively, the shift amount X can also be... L and X R The maximum value (the larger of the two values) is used as the shift amount X. Alternatively, the shift amount X can also be... L and X R The average value is taken as the shift amount X.

[0073] The correction calculation unit 113 calculates the correction amount to eliminate the displacement based on the calculated displacement X and Y of the entire blanking aperture array substrate.

[0074] The deflection control circuit 130 controls the deflection amount of the deflector 208 based on the correction amount, thereby correcting the irradiation position or irradiation amount of the multi-beam.

[0075] Thus, according to this embodiment, the shift amount is calculated based on the circuit current to the input / output circuits 31a and 31b, and the beam irradiation position or irradiation amount is corrected. Therefore, the influence of the electric field of the accumulated charge from the capacitors on the input / output circuits 31a and 31b and the magnetic field generated by the driving current on the accuracy of the beam irradiation position can be suppressed, thereby improving the drawing accuracy.

[0076] In the above embodiments, the circuit current used for calculating the shift amount can correspond to the actual transmission before transmission, the actual transmission, the transmission after transmission, or two or more of these.

[0077] In cases corresponding to launches preceding the actual launch, the effects of prior launches can be corrected. In cases corresponding to the actual launch, real-time corrections can be performed. In cases corresponding to launches following the actual launch, the effects of launches after illumination can be corrected.

[0078] In the above embodiments, an example of calculating the shift amount using circuit current (power supply current and operating current) has been described, but the operating current can also be calculated based on a control signal that is based on either the data transmission amount, data transmission time, or the on or off current of the beam turn-on / off signal.

[0079] In the above embodiment, an example was described where two input / output circuits are provided on the blanking aperture array substrate, and the data path from the deflection control circuit 130 is divided into two systems. However, the number of input / output circuits and the number of data paths from the deflection control circuit 130 can also be three or more systems. Furthermore, it is also possible to input two or more data paths from the deflection control circuit 130 to one input / output circuit.

[0080] Alternatively, the unit array circuit 34 can be divided into multiple blocks. Based on the illumination distribution or blanking distribution of each block, the offset of the center of gravity of the activated beam from the center of the block can be calculated for each block. The shift amount (second shift amount) that combines the offsets of each block is added to the shift amount (first shift amount) calculated using functions f and g.

[0081] For example, such as Figure 8 As shown, the unit array circuit 34 is divided into four 2×2 blocks B1 to B4. For each block, the offset of the center of gravity of the activated beam from the center of the block is calculated. All individual blanking mechanisms 40 in blocks B1 to B4 can be evaluated, or a portion of the individual blanking mechanisms 40 can be skipped. By reducing the number of individual blanking mechanisms 40 evaluated, the computational load can be reduced.

[0082] For each block B1 to B4, calculate the offset of the center of gravity of the activated beam from the center of the block. Then, combine the offsets of each block (linear combination, maximum value selection, averaging, etc.) to calculate the shift amount (second shift amount).

[0083] Based on the displacement of each block, the rotation, magnification, and distortion of the overall beam shape of the multi-beam system can be determined. Therefore, electrostatic lenses and astigmatism correction coils can also be used to correct the beam shape.

[0084] Furthermore, the present invention is not limited to the embodiments described above, and can be embodied by modifying the constituent elements during the implementation stage without departing from its spirit. Moreover, various inventions can be formed by appropriately combining the multiple constituent elements shown in the embodiments. For example, several constituent elements may be deleted from all the constituent elements shown in the embodiments. Furthermore, constituent elements of different embodiments may be appropriately combined.

Claims

1. A multi charged particle beam drawing method comprising: a procedure of dividing a data path for inputting control data for controlling on or off of each beam of a multi-beam to a cell array on a blanking aperture array substrate into a plurality of first blocks according to each input / output circuit of a plurality of input / output circuits and at least any one of a plurality of wiring groups concentrated based on a wiring distance between a plurality of wirings to the plurality of input / output circuits, and calculating a first shift amount of the multi-beam of each of the plurality of first blocks due to at least any one of an electric field and a magnetic field for each of the plurality of first blocks after the division; and a procedure of correcting an irradiation position or an irradiation amount of the multi-beam and irradiating each beam of the multi-beam based on the first shift amount.

2. The multi charged particle beam drawing method according to claim 1, wherein the first shift amount is calculated for each of the plurality of first blocks after the division based on a circuit current including a power supply current and an operating current dependent on a transmission amount or a transmission time of the control data to each of the plurality of input / output circuits.

3. The multi charged particle beam drawing method according to claim 1 or 2, wherein the multi charged particle beam drawing method further comprises: a procedure of dividing the cell array into a plurality of second blocks and acquiring an irradiation amount distribution or a blanking distribution; and a procedure of calculating a second shift amount for each of the second blocks according to the irradiation amount distribution or the blanking distribution, the irradiation position or the irradiation amount of the multi-beam is corrected based on the first shift amount and the second shift amount, and each beam of the multi-beam is irradiated.

4. The multi charged particle beam drawing method according to claim 3, wherein a shift amount of the entire cell array and a rotation, magnification, distortion of a beam shape of the multi-beam are calculated according to the first shift amount or the second shift amount, and the beam shape is corrected.

5. The multi charged particle beam drawing method according to claim 1, wherein the first shift amount of each of the plurality of first blocks is linearly combined to obtain a shift amount of the entire blanking aperture array substrate, and the irradiation position or the irradiation amount of the multi-beam is corrected based on the shift amount.

6. A multi charged particle beam drawing apparatus comprising: a blanking aperture array substrate having a plurality of blankers, the plurality of blankers corresponding to each beam of a multi-beam respectively, and turning on or off each beam; a deflection control circuit outputting control data for controlling on or off of each beam of the multi-beam; a plurality of input / output circuits inputting the control data from the deflection control circuit and outputting a beam on / off signal to the plurality of blankers respectively; and The drawing control section calculates a first shift amount of each of a plurality of first blocks due to at least either of an electric field and a magnetic field, corrects an irradiation position or an irradiation amount of the plurality of beams based on the first shift amount, and performs drawing. The plurality of first blocks are divided from a data path for inputting control data to the cell array on the blanking aperture array substrate according to at least either of each input / output circuit of a plurality of input / output circuits and a plurality of wiring groups concentrated based on a wiring distance between a plurality of wirings of the plurality of input / output circuits.

7. The multi charged particle beam drawing apparatus according to claim 6, wherein The drawing control section calculates the first shift amount based on a circuit current including a power supply current and an operating current dependent on a transmission amount or a transmission time of the control data to each of the plurality of input / output circuits, for each of the divided plurality of first blocks.

8. The multi charged particle beam drawing apparatus according to claim 6, wherein The drawing control section divides the cell array on the blanking aperture array substrate into a plurality of second blocks, acquires an irradiation amount distribution or a blanking distribution of each of the divided plurality of second blocks, calculates a second shift amount for each of the second blocks from the irradiation amount distribution or the blanking distribution, and corrects the irradiation position or the irradiation amount of the plurality of beams based on the first shift amount and the second shift amount.

9. The multi charged particle beam drawing apparatus according to claim 8, wherein The drawing control section calculates a shift amount of the entire cell array and a rotation, magnification, distortion of a beam shape of the plurality of beams from the first shift amount or the second shift amount, and corrects the beam shape based on the shift amount.

10. The multi charged particle beam drawing apparatus according to claim 6, wherein The drawing control section linearly combines the first shift amount of each of the plurality of first blocks, calculates a shift amount of the entire blanking aperture array substrate, and corrects the irradiation position or the irradiation amount of the plurality of beams based on the shift amount.

11. A computer-readable recording medium storing a program, wherein The program causes a control computer of a multi charged particle beam drawing apparatus to execute the steps of: dividing a data path for inputting control data for controlling on or off of each beam of a plurality of beams to a cell array on a blanking aperture array substrate into a plurality of first blocks according to at least either of each input / output circuit of a plurality of input / output circuits and a plurality of wiring groups concentrated based on a wiring distance between a plurality of wirings of the plurality of input / output circuits, calculating a first shift amount of the plurality of beams of each of the plurality of first blocks due to at least either of an electric field and a magnetic field, for each of the divided plurality of first blocks; and correcting an irradiation position or an irradiation amount of the plurality of beams based on the first shift amount.

12. The computer-readable recording medium according to claim 11, wherein ​ ​ The above program causes the above control computer to execute the following steps: a step of calculating the above first shift amount based on a circuit current including a power supply current and an operation current dependent on a transmission amount or a transmission time of control data to each of the above plurality of input / output circuits, for each of the above plurality of first blocks after the division.

13. The computer-readable recording medium according to claim 11, wherein The above program causes the above control computer to execute the following steps: a step of dividing the above unit array into a plurality of second blocks and acquiring an irradiation amount distribution or a blanking distribution; a step of calculating a second shift amount for each of the above second blocks from the above irradiation amount distribution; and a step of correcting an irradiation position or an irradiation amount of the above plurality of beams based on the above first shift amount and the above second shift amount.

14. The computer-readable recording medium according to claim 13, wherein The above program causes the above control computer to execute the following steps: a step of calculating a shift amount of the above unit array as a whole and a rotation, magnification, distortion of a beam shape of the above plurality of beams from the above first shift amount or the above second shift amount, and correcting the above beam shape.

15. The computer-readable recording medium according to claim 11, wherein The above program causes the above control computer to execute the following steps: a step of linearly combining the above first shift amount of each of the above plurality of first blocks, calculating a shift amount of the above blanking aperture array substrate as a whole, and correcting an irradiation position or an irradiation amount of the above plurality of beams based on the shift amount.

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