Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium

Abstract

A substrate processing apparatus includes a processing vessel configured to form a processing chamber, a first gas supply system having a first supply port configured to supply a first processing gas into the processing chamber, a second gas supply system having a second supply port configured to supply a second processing gas different from the first processing gas into the processing chamber, a plasma generation portion configured to be disposed along an outer periphery of the processing vessel and formed of an electrode supplied with high-frequency power, and configured to perform plasma excitation on the first processing gas and the second processing gas supplied into the processing chamber, and a substrate holding table configured to hold a substrate, the second supply port being disposed in a supply pipe configured to extend downward from a top surface of the processing chamber and from a position on a central side in a radial direction of the processing vessel than the first supply port.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a storage medium. Background Technology

[0002] When forming patterns for semiconductor devices such as flash memory, a predetermined process, such as oxidation or nitriding, is sometimes performed as part of the manufacturing process.

[0003] For example, Japanese Patent Application Publication No. 2014-75579 discloses a method for modifying the surface of a pattern formed on a substrate using a processing gas excited by plasma. A gas supply unit is provided at the top of the processing chamber, configured to supply reactive gas into the processing chamber. Summary of the Invention

[0004] The problem that the invention aims to solve

[0005] In the aforementioned conventional example, a gas or a mixture of gases is supplied at a constant gas concentration from the gas outlet of the gas supply unit and is excited by plasma to reach the substrate.

[0006] However, even if the processing gas diffuses into the processing chamber at a uniform gas concentration, it is sometimes impossible to achieve the desired plasma distribution within the substrate by means of the distribution of plasma generated in the processing chamber.

[0007] The purpose of this disclosure is to enable in-plane plasma processing of a substrate with a desired distribution.

[0008] Solution for solving the problem

[0009] According to one aspect of this disclosure, a technology is provided comprising: a processing container comprising a processing chamber; a first gas supply system having a first supply port for supplying a first processing gas into the processing chamber; a second gas supply system having a second supply port for supplying a second processing gas having a composition different from the first processing gas into the processing chamber; a plasma generation unit configured to be disposed along the outer periphery of the processing container and composed of electrodes supplied with high-frequency electricity, and for plasma excitation of the first processing gas supplied into the processing chamber; and a substrate holding stage for holding a substrate, wherein the second supply port is disposed at the lower end of a supply tube and is disposed below the first supply port, the supply tube being configured to extend downward from the top surface of the processing chamber and at a position radially central to the processing container above the first supply port.

[0010] Invention Effects

[0011] According to this disclosure, in-plane plasma processing of a substrate can be performed with a desired distribution. Attached Figure Description

[0012] Figure 1 This is a schematic cross-sectional view showing an example of using an ICP electrode to generate plasma in a substrate processing apparatus according to an embodiment of this disclosure.

[0013] Figure 2 This is an explanatory diagram illustrating the plasma generation principle of a substrate processing apparatus according to one embodiment of the present disclosure.

[0014] Figure 3 This is a diagram showing the structure of the control unit (control unit) of a substrate processing apparatus according to one embodiment of the present disclosure.

[0015] Figure 4 This is a flowchart illustrating a substrate processing procedure according to one embodiment of the present disclosure.

[0016] Figure 5 This is a schematic cross-sectional view showing an example of using the MMT method in the plasma generation section of a substrate processing apparatus according to an embodiment of this disclosure.

[0017] Figure 6 This is an enlarged cross-sectional view showing another example of a nozzle.

[0018] Figure 7 This is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present disclosure, in which the nozzle is disposed above the plasma generation region.

[0019] Figure 8 This is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present disclosure, in which a nozzle is disposed below a plasma generation region.

[0020] Figure 9 This is a schematic cross-sectional view showing a modified example of a substrate processing apparatus according to an embodiment of the present disclosure. Detailed Implementation

[0021] Hereinafter, the methods for implementing this disclosure will be described based on the accompanying drawings. Components indicated by the same reference numerals in the various drawings refer to the same or identical components. Furthermore, in the embodiments described below, repeated descriptions and reference numerals are sometimes omitted. Additionally, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements may not be consistent between the various drawings.

[0022] (1) Structure of the substrate processing device

[0023] The following uses Figure 1The substrate processing apparatus according to the first embodiment of the present invention will be described. The substrate processing apparatus 100 of this embodiment is mainly configured to perform, for example, oxidation treatment on a film formed on a substrate surface. The substrate processing apparatus 100 includes: a processing container 203, a first gas supply unit 1100 as a first gas supply system, a second gas supply unit 1200 as a second gas supply system, a plasma generation unit 1040, and a base 217 as a substrate holding stage.

[0024] (Processing Room)

[0025] The substrate processing apparatus 100 includes a processing furnace 202 for processing a wafer 200, which serves as a substrate, using plasma. A processing container 203 constituting a processing chamber 201 is provided in the processing furnace 202. The processing container 203 includes a first container, a dome-shaped upper container 210, and a second container, a bowl-shaped lower container 211. The upper container 210 is placed over the lower container 211 to form the processing chamber 201. The upper container 210 is formed, for example, from a non-metallic material such as alumina (Al₂O₃) or quartz (SiO₂), and the lower container 211 is formed, for example, from aluminum (Al).

[0026] The top surface of the processing chamber 201, in other words, the top surface of the upper container 210, is formed, for example, by a plate 1004. A cover 1012 is provided above the plate 1004, the cover 1012 having a lower surface opposite to the upper surface of the plate 1004.

[0027] Additionally, a gate valve 244 is provided on the lower side wall of the lower container 211. The gate valve 244 is configured such that, when open, it allows the wafer 200 to be moved into the processing chamber 201 via the inlet / outlet 245 using a conveying mechanism (not shown), or to be moved out of the processing chamber 201. When closed, the gate valve 244 acts as a partition valve to maintain the airtightness of the processing chamber 201.

[0028] The processing chamber 201 includes a plasma generation space 201a around which a resonant coil 212 is arranged, and a substrate processing space 201b communicating with the plasma generation space 201a and processing the wafer 200. The plasma generation space 201a is the space where plasma is generated, that is, the space within the processing chamber located above and below the lower end of the resonant coil 212. On the other hand, the substrate processing space 201b is the space where the substrate is processed using plasma, that is, the space located below the lower end of the resonant coil 212. In this embodiment, the horizontal diameters of the plasma generation space 201a and the substrate processing space 201b are configured to be approximately the same.

[0029] (Base)

[0030] A base 217 constituting a substrate mounting section (substrate holding stage) for mounting wafer 200 is disposed at the center of the bottom side of the processing chamber 201. The base 217 is formed of non-metallic materials such as aluminum nitride (AlN), ceramic, or quartz.

[0031] A heater 217b, serving as a heating mechanism, is integrally embedded inside the base 217. The heater 217b is configured to heat the surface of the wafer 200 from, for example, 25°C to approximately 750°C when powered.

[0032] The base 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is disposed inside the base 217 and grounded via an impedance variable mechanism 275, which serves as an impedance adjustment section. The impedance variable mechanism 275 consists of a coil and a variable capacitor, and is configured such that the impedance can be varied by controlling the inductance and resistance of the coil and the capacitance of the variable capacitor. Therefore, the potential (bias voltage) of the wafer 200 can be controlled via the impedance adjustment electrode 217c and the base 217. Furthermore, in this embodiment, bias voltage control using the impedance adjustment electrode 217c or not can be arbitrarily selected.

[0033] A base lifting mechanism 268, equipped with a drive mechanism for raising and lowering the base, is provided on the base 217. Additionally, a through-hole 217a is provided on the base 217, and a wafer top pin 266 is provided on the bottom surface of the lower container 211. The through-hole 217a and the wafer top pin 266 are each provided in at least three locations at opposing positions. The configuration is such that when the base 217 is lowered by the base lifting mechanism 268, the wafer top pin 266 penetrates the through-hole 217a.

[0034] The substrate mounting portion of this embodiment mainly consists of a base 217, a heater 217b, and an electrode 217c.

[0035] (First Gas Supply Department)

[0036] The first gas supply unit 1100, which is a first gas supply system, has a first supply port 1022 for supplying a first processing gas into the processing chamber 201. Hereinafter, the gas supplied from the first gas supply unit 1100 will be referred to as the first processing gas. Above the center of the processing chamber 201, a plate 1004 constituting the top surface of the processing chamber 201 and a cover 1012 having a lower surface opposite the upper surface of the plate 1004 are provided. The plate 1004 and the cover 1012 are made of a light-transmitting material, such as transparent quartz. A lamp heater 1002 for heating the processing chamber 201 is provided on the upper part of the cover 1012. Light emitted from the lamp heater 1002 passes through the cover 1012 and the plate 1004 to reach the processing chamber 201.

[0037] A first buffer section 1018, supplied with a first processing gas, is provided in the region along the radially outer end of the upper end of the processing container 203. As an example, a manifold 1006 is mounted on the processing container 203, and the first buffer section 1018 is provided on the manifold 1006. The first buffer section 1018 is formed in a ring shape around the plate 1004. During substrate processing, the first buffer section 1018 becomes a space after depressurization. The first processing gas is supplied to the first buffer section 1018. A first supply port 1022 communicates with the first buffer section 1018 and is provided along the circumference of the processing container 203. By supplying the first processing gas from the first buffer section 1018 into the processing chamber 201 through the first supply port 1022, the first processing gas can be supplied evenly in the circumference of the processing container 203.

[0038] The first processing gas is, for example, a mixture of a first gas and a second gas. The first gas is a gas in which oxygen-containing species are generated by plasma excitation, i.e., an oxygen-containing gas. Examples of oxygen-containing gases include at least one of oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), and nitric oxide (NO), or a mixture thereof. The second gas is at least one of a hydrogen-containing gas or an inert gas. In this embodiment, a hydrogen-containing gas is used as the second gas. Examples of hydrogen-containing gases include at least one of hydrogen (H2), H2O, and H2O2, or a mixture thereof. Examples of inert gases include rare gases such as helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), or at least one of nitrogen (N2), or a mixture thereof. Alternatively, the first processing gas may also be a gas composed of the first gas and not containing the second gas. Furthermore, from the viewpoint that the ratio of oxygen to hydrogen in the first and second processing gases can be easily adjusted, it is preferable to use at least one of O2 or O3 as the oxygen-containing gas, or to use H2 as the hydrogen-containing gas.

[0039] The gas inlet path 1020 is connected in a confluence manner to the downstream end of an oxygen-containing gas supply pipe 232a (for supplying oxygen-containing gas), the downstream end of a hydrogen-containing gas supply pipe 232b (for supplying hydrogen-containing gas), and an inert gas supply pipe 232c (for supplying an inert gas, such as N2 gas). The oxygen-containing gas supply pipe 232a is equipped with an oxygen-containing gas supply source 250a, a mass flow controller (MFC) 252a (for flow control), and a valve 253a (for on / off control). The hydrogen-containing gas supply pipe 232b is equipped with a hydrogen-containing gas supply source 250b, an MFC 252b, and a valve 253b. The inert gas supply pipe 232c is equipped with an inert gas supply source 250c, an MFC 252c, and a valve 253c. A valve 243a is installed downstream of the confluence of the oxygen gas supply pipe 232a, the hydrogen gas supply pipe 232b, and the inert gas supply pipe 232c, and is connected to the upstream end of the gas inlet path 1020. The system is configured to allow the valves 253a, 253b, 253c, and 243a to open and close, and to adjust the flow rates of each gas using MFCs 252a, 252b, and 252c. Processing gases, including oxygen-containing gas, hydrogen-containing gas, and inert gas, are supplied to the processing chamber 201 via the oxygen gas supply pipe 232a, the hydrogen gas supply pipe 232b, and the inert gas supply pipe 232c.

[0040] The first gas supply unit 1100, which constitutes the first gas supply system of this embodiment, mainly consists of a first supply port 1022, an oxygen-containing gas supply pipe 232a, a hydrogen-containing gas supply pipe 232b, an inert gas supply pipe 232c, MFCs 252a, 252b, 252c, and valves 253a, 253b, 253c, and 243a. The first gas supply unit 1100 is configured to supply gas, which is an oxygen-containing oxidizing seed source, into the processing chamber 201.

[0041] (Second Gas Supply Department)

[0042] The second gas supply unit 1200, as a second gas supply system, has a nozzle orifice 1008a serving as a second supply port for supplying a second processing gas, which has a composition different from the first processing gas, into the processing chamber 201. The nozzle orifice 1008a is provided at a nozzle 1008, which serves as a supply pipe extending downward from the center of the plate 1004 constituting the top surface. Furthermore, the nozzle orifice 1008a is located below the first supply port 1022. Hereinafter, the gas supplied from the second gas supply unit 1200 will be referred to as the second processing gas. Figure 1As shown, a second buffer section 1028, to which a second processing gas is supplied, is provided between the upper surface of the plate 1004 and the lower surface of the cover 1012. The upper end of the nozzle 1008 is connected to the second buffer section 1028. By employing a structure that supplies the second processing gas into the processing chamber 201 via the second buffer section 1028, even when components such as a lamp heater 1002 need to be positioned above the cover 1012, the second processing gas can be supplied from the center of the plate 1004 with a simple structure.

[0043] exist Figure 1 In this configuration, nozzle orifice 1008a is disposed between the upper and lower ends of the electrodes constituting plasma generation section 1040. Additionally, nozzle orifice 1008a is disposed between the upper and lower ends of the plasma generation region. The plasma generation region is the region where plasma P is generated, as detailed later. Furthermore, nozzle orifice 1008a may also be disposed at approximately the same height as the midpoint of the resonant coil 212 constituting the plasma generation section 1040. In other words, nozzle orifice 1008a may also be disposed at the same height as the annular plasma formed at the midpoint of the resonant coil 212, relative to the wavelength λ of the high-frequency power supplied to the resonant coil 212.

[0044] Moreover, such as Figure 7 As shown, the nozzle orifice 1008a can also be located above the upper end of the electrode constituting the plasma generation section. Alternatively, the nozzle orifice 1008a can also be located above the upper end of the plasma generation region.

[0045] In addition, Figure 1 In this configuration, the nozzle orifice 1008a is positioned radially inside the processing container 203, compared to the inner circumference of the plasma generation region formed in a cylindrical or annular shape along the inner circumference of the processing container 203 within the processing chamber 201. Figure 7 , Figure 8 The situation is the same. That is, in this embodiment, the nozzle 1008 and the nozzle orifice 1008a are configured to supply a second processing gas to the inner region in the radial direction of the processing container 203, compared to the inner circumference of the plasma generation region which is formed in a cylindrical or annular shape along the inner circumference of the processing container 203.

[0046] Moreover, such as Figure 8 As shown, the nozzle orifice 1008a may also be located below the lower end of the electrode constituting the plasma generation section 1040. Alternatively, the nozzle orifice 1008a may also be located below the lower end of the plasma generation region. In this case, the base 217 is controlled such that, during substrate processing, the wafer 200 held by the base 217 is located below the lower end of the electrode.

[0047] like Figure 8 As shown, the nozzle orifice 1008a can also be composed of a plurality of nozzle outlets 1008b disposed at the front end of the nozzle 1008. These nozzle outlets 1008b are configured, for example, to eject the second processing gas obliquely downward at a predetermined angle θ relative to the vertical direction of the surface of the wafer 200. The predetermined angle θ is set according to the distance h between the nozzle orifice 1008a and the wafer 200, so that the distance r from the center of the wafer 200 to the position where the ejection direction of the second processing gas from the nozzle orifice 1008a intersects with the wafer 200 is constant (see reference). Figure 7 , Figure 8 Therefore, the predetermined angle θ is set such that the shorter the distance between the nozzle orifice 1008a and the upper surface of the wafer 200, the larger the angle θ becomes, and the longer the distance between the nozzle orifice 1008a and the upper surface of the wafer 200, the smaller the angle θ becomes. By keeping the distance r constant, the number of parameters that cause the distance h to vary can be reduced, making it easier to control the hydrogen concentration distribution in the processing chamber 201, as described later.

[0048] exist Figure 8 In the example shown, the front end (lower end) of the nozzle 1008 is closed, and a plurality of nozzle outlets 1008b are formed on the outer peripheral surface near the front end of the nozzle 1008. The angle of the nozzle outlet 1008b relative to the axial direction S of the nozzle 1008 is set to the predetermined angle θ mentioned above. By making the angle θ less than 90°, the second processing gas ejected from the nozzle outlet 1008b can be directly supplied to the surface of the wafer 200. When the angle θ is set to 90° or more, it is not possible to directly supply the second processing gas ejected from the nozzle outlet 1008b toward the surface of the wafer 200, and therefore it is difficult to adjust the concentration distribution of the second processing gas (more specifically, the concentration distribution of hydrogen) in the space near the processing surface of the wafer 200.

[0049] Furthermore, by adjusting at least one of the distance h or the angle θ, the width of the planar region containing the processing surface of the wafer 200 to which the second processing gas is directly supplied from the nozzle 1008b can be adjusted. For example, this planar region to which the second processing gas is directly supplied can be a region within the processing surface of the wafer 200, more preferably a region within the processing surface of the wafer 200 excluding the outer edge of the wafer 200. By adjusting the size of the planar region to which the second processing gas is directly supplied to be a region within the processing surface of the wafer 200 in this way, the adjustment of the concentration distribution of the second processing gas in the vicinity of the processing surface of the wafer 200 becomes easier.

[0050] The nozzle orifice 1008a is configured to directly inject the second processing gas onto the wafer 200, or to directly supply the space on the wafer 200. In other words, no structure such as a gas diffuser is provided between the nozzle orifice 1008a and the wafer 200.

[0051] Furthermore, the nozzle orifice 1008a is not limited to being located at the front end (lower end) of the nozzle 1008, but may also be located at the middle part of the axial direction S of the nozzle 1008. Additionally, for example, it may be configured such that the height position of the nozzle orifice 1008a can be adjusted to vary the amount of protrusion of the nozzle 1008.

[0052] The second processing gas is, for example, a mixture of the first gas and the second gas. Alternatively, the second processing gas may be a gas composed of the second gas but not containing the first gas. Furthermore, by using the first gas to form the first processing gas and setting it to be a gas that does not contain the second gas, the hydrogen concentration in the processing chamber 201, described later, can be adjusted using a simple supply system.

[0053] The gas inlet path 1030 is connected in a confluence manner to the downstream end of an oxygen gas supply pipe 232d (for oxygen-containing gas), the downstream end of a hydrogen gas supply pipe 232e (for hydrogen-containing gas), and an inert gas supply pipe 232f (for inert gas). An oxygen gas supply source 250d, an MFC 252d, and a valve 253d are installed in the oxygen gas supply pipe 232d. A hydrogen gas supply source 250e, an MFC 252e, and a valve 253e are installed in the hydrogen gas supply pipe 232e. An inert gas supply source 250f, an MFC 252f, and a valve 253f are installed in the inert gas supply pipe 232f. A valve 243c is installed on the downstream side where the oxygen gas supply pipes 232d, hydrogen gas supply pipe 232e, and inert gas supply pipe 232f converge, and is connected to the upstream end of the gas inlet path 1030. It is configured to open and close valves 253d, 253e, 253f, and 243c, adjust the flow rate of each gas using MFCs 252d, 252e, and 252f, and supply oxygen-containing gas, hydrogen-containing gas, and inert gas to the processing chamber 201 via oxygen-containing gas supply pipe 232d, hydrogen-containing gas supply pipe 232e, and inert gas supply pipe 232f.

[0054] The second gas supply unit 1200, which constitutes the second gas supply system of this embodiment, mainly consists of a nozzle 1008, a nozzle orifice 1008a, an oxygen-containing gas supply pipe 232d, a hydrogen-containing gas supply pipe 232e, an inert gas supply pipe 232f, MFCs 252d, 252e, 252f, and valves 253d, 253e, 253f, and 243c. The second processing gas supplied to the processing chamber 201 by the second gas supply unit 1200 functions as a hydrogen concentration adjusting gas for adjusting the hydrogen concentration containing hydrogen.

[0055] The first gas supply unit 1100 is configured to supply a first processing gas to a first region, i.e., the outer peripheral region, within the plasma generation space 201a (described later) along the inner wall of the processing chamber 201. The second gas supply unit 1200 is configured to supply a second processing gas to a region surrounded by the outer peripheral region and a second region, i.e., the central region, within the plasma generation space 201a. That is, the first processing gas is supplied to the outer peripheral region within the processing chamber 201, and the second processing gas is supplied to the central region, which includes the region above the processing surface of the wafer 200 and differs from the outer peripheral region in the planar direction of the wafer 200. The space within the processing chamber 201 is composed of the outer peripheral region along the inner wall of the processing chamber 201 and the central region surrounded by the outer peripheral region.

[0056] According to the first gas supply unit 1100 and the second gas supply unit 1200, the mixing ratio (flow rate ratio) of oxygen-containing gas and hydrogen-containing gas and their total flow rate can be adjusted for the first gas and the second gas respectively. Therefore, the mixing ratio of oxygen-containing gas and hydrogen-containing gas supplied to each region of the outer peripheral region and the central region of the processing chamber 201 and their total flow rate can be adjusted. More generally, the ratio of oxygen element to hydrogen element supplied to each region of the outer peripheral region and the central region of the processing chamber 201 and their total flow rate can be adjusted.

[0057] Furthermore, the structure of the second gas supply unit 1200 is not limited to this; for example, it may also adopt... Figure 9 The structure is as shown in the modified example. In this modified example, a plate 1004 forming the top surface of the processing chamber 201 is provided, and a nozzle 1008 is connected to or passes through the plate 1004, with its upper end connected to a second gas supply pipe 234 for supplying the second processing gas. That is, the details are omitted. Figure 1 The first buffer section 1018 in the middle.

[0058] (Exhaust section)

[0059] A gas exhaust port 235 is provided on the side wall of the lower container 211 to discharge reaction gases and the like from the processing chamber 201. The upstream end of a gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is equipped with an APC (Auto Pressure Controller) valve 242 as a pressure regulator, a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum exhaust device.

[0060] The exhaust section of this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. Alternatively, a vacuum pump 246 may be included in the exhaust section.

[0061] (Plasma generation unit (ICP method))

[0062] The plasma generation unit 1040 is arranged along the outer periphery of the processing container 203 and is composed of electrodes supplied with high-frequency electricity, configured to excite the first and second processing gases supplied to the processing chamber 201 with plasma. The electrodes are, for example, resonant coils 212 arranged around the outer periphery of the processing container 203.

[0063] Specifically, a spiral resonant coil 212 serving as a high-frequency electrode is provided on the outer periphery of the processing chamber 201, i.e., on the outer side of the side wall of the upper container 210, in a manner that surrounds the processing chamber 201. An RF sensor 272, a high-frequency power supply 273, and a matching device 274 for matching the impedance or output frequency of the high-frequency power supply 273 are connected to the resonant coil 212.

[0064] A high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. An RF sensor 272 is located on the output side of the high-frequency power supply 273 to monitor the information of the supplied high-frequency traveling wave and reflected wave. The reflected wave power monitored by the RF sensor 272 is input to a matching converter 274. Based on the reflected wave information input from the RF sensor 272, the matching converter 274 controls the impedance of the high-frequency power supply 273 or the frequency of the output high-frequency power to minimize the reflected wave.

[0065] In order to form a standing wave of a predetermined wavelength, the resonant coil 212 is configured with a winding diameter, winding spacing, and number of turns in a manner that resonates with a constant wavelength. That is, the electrical length of the resonant coil 212 is set to be equivalent to half or an integer multiple of the wavelength of the predetermined frequency of the high-frequency power supplied from the high-frequency power source 273.

[0066] Specifically, considering factors such as the applied power, the strength of the generated magnetic field, and the shape of the device used, the resonant coil 212 is formed in a shape of 50-300 mm², for example, using a high-frequency power of 800 kHz to 50 MHz and 0.1 to 5 KW to generate a magnetic field of approximately 0.01 to 10 Gauss. 2 The effective cross-sectional area and coil diameter of 200–500 mm are used to wind the coil approximately 2–60 times around the outer periphery of the plasma generation space 201a. Furthermore, the use of numerical ranges such as "800 kHz to 50 MHz" in this specification means that both the lower and upper limits are included within that range. For example, "800 kHz to 50 MHz" means "above 800 kHz and below 50 MHz". The same applies to other numerical ranges.

[0067] The two ends of the resonant coil 212 are electrically grounded, and at least one end is grounded via a movable tap 213 when the device is initially set up or when the processing conditions are changed, the electrical length of the resonant coil 212 is finely adjusted. Figure 1Mark 214 indicates another fixed ground. The position of the movable tap 213 is adjusted so that the resonant characteristics of the resonant coil 212 are approximately equal to those of the high-frequency power supply 273. Furthermore, a power supply section is formed between the two grounded ends of the resonant coil 212 via the movable tap 215.

[0068] The shielding plate 1223 is provided to shield the electric field outside the resonant coil 212.

[0069] The plasma generation unit 1040 of this embodiment mainly consists of a resonant coil 212, an RF sensor 272, and a matching unit 274. Alternatively, the plasma generation unit 1040 may also include a high-frequency power supply 273.

[0070] Here, use Figure 2 The plasma generation principle of the apparatus in this embodiment and the properties of the generated plasma will be explained. The plasma generation unit 1040 in this embodiment is configured to generate plasma via ICP (Inductively Coupled Plasma).

[0071] In this embodiment, since the resonant offset in the resonant coil 212 during plasma generation is compensated on the power supply side, it has the following functions: the reflected wave power from the resonant coil 212 during plasma generation is detected in the RF sensor 272, and the matching unit 274 corrects the output of the high-frequency power supply 273 based on the detected reflected wave power.

[0072] Specifically, the matching unit 274 increases or decreases the impedance or output frequency of the high-frequency power supply 273 based on the reflected wave power from the resonant coil 212 when the plasma is generated, as detected in the RF sensor 272, so as to minimize the reflected wave power.

[0073] In the resonant coil 212 of this embodiment, the electrical length of the resonant coil 212 is set to a length equivalent to half or an integer multiple of the wavelength of one wavelength at a predetermined frequency of high-frequency power, such as... Figure 2 As shown, due to the high-frequency power supplied to the resonant coil containing plasma at its actual resonant frequency, a standing wave is formed in which the phase voltage and anti-phase voltage are always canceled out. With the electrical length of the resonant coil 212 being the same as the wavelength of the high-frequency power, the highest phase current is generated at the electrical midpoint of the coil (the node where the voltage is zero). Therefore, near the electrical midpoint, there is almost no capacitive coupling with the processing chamber wall or base 217, forming a ring-shaped induced plasma with extremely low potential.

[0074] With this structure, the resonant coil 212 is arranged to be wound around the outer periphery of the processing chamber 201. Therefore, by supplying high-frequency power to the resonant coil 212, a cylindrical or annular plasma P is generated in the plasma generation region near the resonant coil 212 and along the inner periphery of the processing container 203 in the processing chamber 201. That is, the cylindrical or annular plasma P is generated in the outer peripheral region within the processing chamber 201. In particular, in this embodiment, the annular plasma P is generated at the height of the electrical midpoint of the resonant coil 212, that is, at the midpoint between the upper and lower ends of the resonant coil 212.

[0075] (Plasma generation unit (MMT method))

[0076] The plasma generation unit 1040 is not limited to ICP method, such as Figure 5 As shown, it can also be a structure that generates plasma through MMT (Modified Magnetron Typed Plasma Source).

[0077] A high-frequency electric field is created by applying power to the plasma generating electrode, and a magnetic field is formed, resulting in magnetron discharge. Electrons emitted from the plasma generating electrode then continue their cycloidal motion while drifting, thus achieving a long lifetime and increasing the ionization generation rate. Therefore, the MMT device can generate high-density plasma.

[0078] MMT devices can perform various plasma treatments, such as stimulating and decomposing processing gases, oxidizing or nitriding thin films formed on or on substrate surfaces, forming thin films on substrates, or etching substrate surfaces.

[0079] A plasma generating electrode 1215, formed in a cylindrical, annular, or cylindrical shape, serving as a discharge mechanism, is provided on the outer periphery of the processing container 203 (upper container 210). The plasma generating electrode 1215 surrounds the plasma generating region 224 within the processing chamber 201. A high-frequency power supply 273 is connected to the plasma generating electrode 1215, and this high-frequency power supply 273 applies high-frequency power via an impedance matching device 1272 for impedance matching. A voltage measuring unit 1270 for measuring the inter-peak voltage of the plasma generating electrode 1215 is connected between the plasma generating electrode 1215 and the impedance matching device 1272. Data such as the inter-peak voltage value of the plasma generating electrode 1215 measured by the voltage measuring unit 1270 are output to the controller 221, which will be described later. The plasma generating unit 1040 mainly consists of the plasma generating electrode 1215, the impedance matching device 1272, and the high-frequency power supply 273. In addition, the voltage measuring unit 1270, the impedance matching unit 1272, and the high-frequency power supply 273 are connected to the controller 221 described later.

[0080] Furthermore, near the upper and lower ends of the outer surface of the plasma generating electrode 1215, an upper magnet 1216a and a lower magnet 1216b, formed in a cylindrical shape, such as an annular or cylindrical shape, are arranged to sandwich the plasma generating electrode 1215 from above and below, serving as a magnetic field forming mechanism. The upper magnet 1216a and the lower magnet 1216b are, for example, permanent magnets. The upper magnet 1216a and the lower magnet 1216b have magnetic poles at both ends (inner and outer circumferential ends) along the radial direction of the processing chamber 201. These upper magnets 1216a and the lower magnet 1216b are arranged with their magnetic poles facing opposite directions. That is, the inner circumferential magnetic poles are opposite poles to each other. Therefore, magnetic lines of force can be formed along the inner circumferential surfaces of the upper magnet 1216a and the lower magnet 1216b in the cylindrical axial direction.

[0081] (Control Department)

[0082] The controller 221, as the control unit, is configured to control APC valves 242 and 243b and vacuum pump 246 via signal line A, base lifting mechanism 268 via signal line B, heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C, gate valve 244 via signal line D, RF sensor 272, high-frequency power supply 273 and matching device 274 via signal line E, and MFCs 252a to 252f and valves 253a to 253f, 243a and 243c via signal line F.

[0083] like Figure 3 As shown, the control unit (control unit), i.e., the controller 221, is configured as a computer equipped with a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. An input / output device 222, such as a touch panel or a display, is connected to the controller 221.

[0084] The storage device 221c is configured such as flash memory or HDD (Hard Disk Drive). The storage device 221c can readablely store control programs that control the operation of the substrate processing apparatus, process recipes that describe the substrate processing steps and conditions (described later), etc. The process recipes are arranged in a way that enables the controller 221 to execute each step of the substrate processing steps (described later) and obtain a predetermined result, and function as a program. Hereinafter, the process recipes, control programs, etc., will be collectively referred to as programs. Furthermore, the use of the term "program" in this specification may include only a process recipe unit, only a control program unit, or both. Additionally, RAM 221b is configured as a memory area (working area) for temporarily storing programs, data, etc., read by the CPU 221a.

[0085] I / O port 221d is connected to the aforementioned MFCs 252a-252f, valves 253a-253f, 243a, 243b, 243c, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching device 274, base lifting mechanism 268, impedance variable mechanism 275, heater power adjustment mechanism 276, etc.

[0086] CPU 221a is configured to read and execute control programs from storage device 221c, and to read process recipes from storage device 221c based on inputs such as operation commands from input / output device 222. Furthermore, the CPU 221a is configured to control the opening adjustment of the APC valve 242, the opening and closing of the valve 243b, and the start and stop of the vacuum pump 246 via I / O port 221d and signal line A, according to the read process recipe content; control the lifting action of the base lifting mechanism 268 via signal line B; control the power supply adjustment action of the heater power adjustment mechanism 276 to the heater 217b via signal line C; control the impedance value adjustment action of the impedance variable mechanism 275; control the opening and closing action of the gate valve 244 via signal line D; control the operation of the RF sensor 272, the matching device 274, and the high-frequency power supply 273 via signal line E; control the flow rate adjustment action of various gases using MFCs 252a to 252f via signal line F; and control the opening and closing action of valves 253a to 253f, 243a, and 243c.

[0087] The controller 221 can be configured to install the aforementioned program stored in an external storage device (e.g., magnetic disks such as magnetic tape, floppy disks, or hard disks; optical discs such as CDs or DVDs; optical disks such as MO; semiconductor memory such as USB memory or memory cards) 223 into a computer. The storage device 221c and the external storage device 223 constitute a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage media. In this specification, the use of the term "storage medium" may indicate the presence of only the storage device 221c, only the external storage device 223, or both. Furthermore, providing the program to the computer may also be done without using the external storage device 223, but rather using communication means such as the Internet or dedicated lines.

[0088] (Semiconductor device manufacturing method)

[0089] The method for manufacturing a semiconductor device includes: a step of moving a wafer 200 (substrate) into a processing chamber 201 of a substrate processing apparatus 100 (e.g., substrate moving step S110); a step of supplying a first processing gas and a second processing gas into the processing chamber 201 (e.g., reaction gas supply step S130); and a step of performing plasma processing on the wafer 200 (e.g., plasma processing step S140).

[0090] The substrate processing apparatus 100 includes: a processing container 203, which constitutes a processing chamber 201; a first gas supply unit 1100 (first gas supply system) having a first supply port 1022 for supplying a first processing gas into the processing chamber 201; a second gas supply unit 1200 (second gas supply system) having a nozzle orifice 1008a (second supply port) for supplying a second processing gas with a composition different from the first processing gas into the processing chamber 201; and a plasma generation unit 1040 provided along the outer periphery of the processing container 203. The device consists of electrodes supplied with high-frequency power, configured to excite the first processing gas supplied to the processing chamber 201 with plasma; and a base 217 (substrate holding stage) holding the wafer 200 (substrate), wherein a nozzle orifice 1008a is provided on the nozzle 1008, the nozzle 1008 being provided in such a way that it extends downward from the top surface of the processing chamber 201 and is located at a position (more specifically, the center of the top surface) on the radially central side of the processing container above the first supply port, and is located below the first supply port 1022.

[0091] (2) Substrate processing process

[0092] Next, regarding the substrate processing steps of this embodiment, using the aforementioned substrate processing apparatus 100 as a step in the manufacturing process of semiconductor devices such as flash memory, an example of a method for forming, for example, a silicon oxide (SiO) film by oxidizing the surface of a wafer 200 on which a silicon (Si) film is formed will be described. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0093] (Substrate handling process S110)

[0094] First, the wafer 200 is moved into the processing chamber 201 for storage. Specifically, the base lifting mechanism 268 lowers the base 217 to the transport position of the wafer 200. As a result, the wafer top pin 266 protrudes from the through hole 217a by a predetermined height above the surface of the base 217.

[0095] Next, gate valve 244 is opened, and wafer 200 is moved into processing chamber 201 from the vacuum transport chamber adjacent to processing chamber 201 using a wafer transport mechanism (not shown). The moved-in wafer 200 is supported horizontally on wafer top pin 266. After the wafer 200 is moved into processing chamber 201, gate valve 244 is closed to seal processing chamber 201. Furthermore, base 217 is raised by base lifting mechanism 268, and wafer 200 is supported on the upper surface of base 217.

[0096] (Heating / Vacuum Exhaust Process S120)

[0097] Next, the wafer 200, which has been moved into the processing chamber 201, is heated. The heater 217b is preheated, and the wafer 200 is heated to a predetermined value, for example, within the range of 150 to 750°C, by holding the wafer 200 on the base 217 where the heater 217b is embedded. Additionally, the processing chamber 201 is heated by the lamp heater 1002. Furthermore, during the heating of the wafer 200, a vacuum pump 246 is used to evacuate the processing chamber 201 via a gas exhaust pipe 231, and the pressure inside the processing chamber 201 becomes a predetermined value. The vacuum pump 246 operates at least until the substrate removal process S160, described later, is completed.

[0098] (Reaction gas supply process S130)

[0099] Next, a mixture of oxygen-containing gas and hydrogen-containing gas, which serves as the first processing gas (oxygen-containing oxidizing source gas), is supplied from the first gas supply unit 1100 to the outer periphery of the processing chamber 201. Specifically, valves 253a and 253b are opened, and while the flow is controlled using MFCs 252a and 252b, the first processing gas is supplied into the processing chamber 201 through the gas outlet 239.

[0100] By utilizing MFC 252a and MFC 252b for flow control, at least one of the total flow rate of the first processed gas and the composition of the first processed gas (particularly the hydrogen content) can be adjusted. In this embodiment, the composition of the first processed gas can be easily adjusted by changing the mixing ratio (flow rate ratio) of the hydrogen-containing gas and the oxygen-containing gas.

[0101] In this case, when using, for example, O2 gas as the oxygen-containing gas and H2 gas as the hydrogen-containing gas, the total flow rate of the first processing gas is set to, for example, 1000 to 10000 sccm, and the flow rate of the oxygen-containing gas in the first processing gas is set to a predetermined value in the range of, for example, 20 to 4000 sccm, preferably 20 to 2000 sccm. Furthermore, the flow rate of the hydrogen-containing gas in the first processing gas is set to a predetermined value in the range of, for example, 20 to 1000 sccm, preferably 20 to 500 sccm. The hydrogen to oxygen content ratio in the first processing gas is a predetermined value in the range of 0:100 to 95:5.

[0102] Preferably, the first processing gas is directly supplied to the outer peripheral region of the processing chamber 201 and to the region of the annular plasma generated in the plasma processing step S140 described later.

[0103] Simultaneously, a mixture of oxygen-containing gas and hydrogen-containing gas, serving as the hydrogen concentration adjustment gas (i.e., the second processing gas), is supplied from the second gas supply unit 1200 to the central region of the processing chamber 201. Specifically, valves 253d and 253e are opened, and while flow control is performed using MFCs 252d and 252e, the second processing gas is supplied to the processing chamber 201 through the nozzle orifice 1008a provided in the nozzle 1008.

[0104] By utilizing MFC 252d and MFC 252e for flow control, at least one of the total flow rate of the second processing gas and its composition (particularly the hydrogen content) can be adjusted. Similar to the first processing gas, the composition of the second processing gas can be easily adjusted by changing the mixing ratio of the oxygen-containing gas and the hydrogen-containing gas.

[0105] In this case, when using, for example, O2 gas as the oxygen-containing gas and, for example, H2 gas as the hydrogen-containing gas, the total flow rate of the second processing gas is set to be equal to or less than the total flow rate of the first processing gas, for example, 100 to 5000 sccm, and the flow rate of the oxygen-containing gas in the second processing gas is set to a predetermined value, for example, 0 to 5000 sccm, preferably 0 to 500 sccm. Similarly, the flow rate of the hydrogen-containing gas in the second processing gas is set to a predetermined value, for example, 0 to 5000 sccm, preferably 0 to 500 sccm. In this embodiment, the ratio of hydrogen-containing gas in the second processing gas (i.e., the hydrogen content of the first processing gas) is set to a predetermined value, within the range of 0 to 100%. This is because when the flow rate of the second processing gas is greater than the flow rate of the first processing gas, the concentration and ratio of hydrogen and oxygen in the plasma generation region within the processing chamber 201 are greatly affected by the second processing gas, making it difficult to control plasma excitation in the plasma generation region and the generation of oxides generated by the plasma.

[0106] That is, in this embodiment, the controller 221 controls at least MFCs 252a, 252b, 252d, and 252e to adjust at least one of the concentration ratio of the first gas to the second gas in the first processing gas and the second processing gas, or the flow rate ratio of the first processing gas to the second processing gas.

[0107] In this embodiment, by supplying a second processing gas containing hydrogen from the nozzle orifice 1008a, the in-plane distribution of the substrate being processed can be easily adjusted when the surface of the wafer 200 is processed using active species generated by plasma excitation. In other words, the controllability of the in-plane distribution can be improved.

[0108] If the plasma density generated in the processing chamber 201 deviates, especially if a radial deviation occurs centered on the center of the processing chamber 201, it is easy to adjust. Specifically, this can be done by reducing the in-plane distribution deviation of the processing on the surface of the wafer 200 caused by the reduction of plasma density.

[0109] Furthermore, by arranging the nozzle 1008 in a manner that extends downward from the top surface of the processing chamber 201, i.e., plate 1004, even when the electrodes of the plasma generation unit 1040 (e.g., resonant coil 212) are arranged on the side of the processing container 203, there will be no interference between the nozzle 1008 and the electrodes, making the device design easier.

[0110] The length of the nozzle 1008 (distance from the nozzle orifice 1008a to the wafer 200) varies depending on factors such as the flow rate of the second processing gas, the pressure (processing pressure) inside the processing chamber 201, the RF power value, and the desired in-plane distribution of the plasma processing substrate. In this embodiment, the in-plane distribution of the plasma processing can be adjusted by changing the length of the nozzle 1008.

[0111] The longer the nozzle 1008, i.e., the shorter the distance to the wafer 200, the less the impact of the supply of the second processing gas on the flow of the first processing gas supplied from the first supply port 1022 within the processing chamber 201. Furthermore, by reducing the distance between the nozzle orifice 1008a and the surface of the wafer 200, it becomes easier to adjust the gas distribution in the space near the wafer 200 supplied with gas from the nozzle orifice 1008a. To achieve these effects, it is particularly preferable to position the nozzle orifice 1008a below the lower end of the electrode constituting the plasma generation section 1040, or below the lower end of the plasma generation region.

[0112] On the other hand, the shorter the nozzle 1008, i.e., the longer the distance to the wafer 200, the greater the influence of the supply of the second processing gas on the flow of the first processing gas supplied from the first supply port 1022 within the processing chamber 201. Therefore, by adjusting the flow of the first processing gas within the processing chamber 201 through the supply of the second processing gas, the nozzle 1008 can be shortened. To achieve these effects, it is particularly preferable to position the nozzle orifice 1008a above the upper end of the electrode constituting the plasma generation section 1040, or above the upper end of the plasma generation region.

[0113] Furthermore, the nozzle orifice 1008a can be located between the upper and lower ends of the electrodes constituting the plasma generation section 1040, or between the upper and lower ends of the plasma generation region. By configuring the nozzle orifice 1008a in this way, it is easier to suppress the direct supply of the second processing gas to the plasma generation region, and easier to control the generation state of active species in the plasma generation region. Moreover, the nozzle orifice 1008a can also be located at approximately the same height as the midpoint of the resonant coil 212 constituting the plasma generation section. By configuring the nozzle orifice 1008a in this way, it is easier to suppress the direct supply of the second processing gas to the plasma generation region with the highest plasma density, and easier to control the generation state of active species in the plasma generation region.

[0114] (Hydrogen concentration distribution control)

[0115] In this process, by controlling at least one of the flow rate and hydrogen content of the first processing gas and the second processing gas, the hydrogen concentration distribution within the processing chamber 201, particularly in the space near the processing surface of the wafer 200, can be controlled. The hydrogen concentration distribution is controlled so that the density distribution of oxide seeds in the plasma processing process described later becomes the desired distribution. The hydrogen content of the second processing gas is preferably adjusted to be different from that of the first processing gas. By using a second processing gas with a different hydrogen content than the first processing gas, the flow rates of the first and second processing gases can be easily controlled separately, thus adjusting the hydrogen concentration distribution within the processing chamber 201. Alternatively, the hydrogen content of the second processing gas can be adjusted to be higher or lower than that of the first processing gas.

[0116] The pressure inside the processing chamber 201 is adjusted by changing the opening of the APC valve 242 to a predetermined pressure within the range of 5 to 260 Pa, for example, to control the venting inside the processing chamber 201. In this way, while appropriately venting the interior of the processing chamber 201, the supply of the first and second processing gases continues until the plasma processing step S140 described later is completed.

[0117] (Plasma treatment process S140)

[0118] If the pressure inside the processing chamber 201 stabilizes, high-frequency power is applied to the resonant coil 212 from the high-frequency power supply 273. This creates a high-frequency electromagnetic field within the plasma generation space 201a supplied with the first processing gas. This electromagnetic field excites a ring-shaped induced plasma with the highest plasma density at a height corresponding to the electrical midpoint of the resonant coil 212 within the plasma generation space. The plasma-like first processing gas, containing oxygen and hydrogen, dissociates, generating oxygen radicals such as O radicals (O free radicals), hydroxyl radicals (OH radicals), atomic oxygen (O), ozone (O3), and oxygen ions. These oxygen-containing reactive species function as oxidizing agents.

[0119] In this process, a first processing gas is supplied to the region where plasma is generated at a second plasma density, i.e., the plasma generation region. In this embodiment, the first processing gas is supplied to the annular plasma-excited region, i.e., the plasma generation region, within the outer periphery of the processing chamber 201 near the resonant coil 212, and the first processing gas is mainly used for plasma excitation, thereby generating the aforementioned active species.

[0120] On the other hand, in this process, the second processing gas is supplied to the plasma non-generating region, that is, the region where plasma is generated at a first plasma density lower than the second plasma density, or the region where no plasma is generated (the first plasma density is essentially 0). In other words, the second processing gas is supplied to a region where the plasma density is different from that of the first processing gas. In this embodiment, the second processing gas is particularly supplied to the plasma non-generating region formed inside the annular plasma.

[0121] That is, in this embodiment, at least a portion of the outer peripheral region of the processing chamber 201 becomes a plasma generation region for generating annular plasma along the inner wall of the processing chamber 201, and the central region of the processing chamber 201 becomes a plasma non-generation region.

[0122] (Density distribution control of active species)

[0123] Here, when oxygen-containing reactive species generated by plasma react with hydrogen in the atmosphere, they lose or reduce (i.e., become deactivated) their ability to act as oxidizing species (oxidizing capacity). Therefore, the rate of decay (attenuation amount) of the density (concentration) of reactive species in the atmosphere varies depending on the hydrogen concentration in which the reactive species are present. The higher the hydrogen concentration, the greater the attenuation amount of the reactive species; the lower the hydrogen concentration, the smaller the attenuation amount of the reactive species.

[0124] In this embodiment, the active species generated in the plasma generation region gradually deactivate upon diffusion into the plasma non-generation region by reacting with hydrogen in the non-generation region. Therefore, the density of active species diffusing in the non-generation region can be adjusted according to the hydrogen concentration in that region to control its attenuation rate. In other words, the density distribution of active species in the non-generation region can be arbitrarily adjusted by controlling the hydrogen concentration distribution within that region.

[0125] Specifically, in the aforementioned reactive gas supply process, the in-plane hydrogen concentration distribution of the wafer 200 in the non-plasma generation region is controlled by adjusting at least one of the flow rate of the second processing gas mainly supplied to the non-plasma generation region or the hydrogen content. Then, by controlling this hydrogen concentration distribution, the density distribution of active species diffused in the space above the wafer 200 is adjusted. The active species with this adjusted in-plane density distribution of the wafer 200 are then supplied to the surface of the wafer 200.

[0126] The hydrogen concentration distribution in the non-generating region of plasma is controlled according to the distance from the plasma generating region, and more specifically, according to the distance from the region where annular plasma is formed in the direction from the outer periphery of the processing chamber 201 toward the center.

[0127] Active seeds generated by the annular plasma formed in the outer peripheral region are supplied to the wafer 200 while diffusing from the outer periphery toward the center in the region above the processing surface of the wafer 200 (the upper space). In this embodiment, the annular plasma is formed with a substantially uniform density (intensity) in the inner peripheral direction of the processing chamber 201, and the density of active seeds generated by this plasma can also be substantially uniform in the inner peripheral direction of the processing chamber 201. Therefore, by imparting a gradient to the hydrogen concentration distribution based on the distance from the plasma generation region in the radial direction of the processing chamber 201 (i.e., the radial direction of the wafer 200), it is possible to make the density distribution of active seeds uniform in the inner peripheral direction of the processing chamber 201 while controlling the density distribution of active seeds in the in-plane direction of the wafer 200 to an arbitrary distribution.

[0128] Furthermore, in this embodiment, the types of active species for controlling density distribution are not particularly limited. This embodiment is suitable for controlling the density distribution of oxygen free radicals and atomic oxygen that are not accelerated and diffused by the electromagnetic field in the processing chamber 201.

[0129] Afterwards, if a predetermined processing time, such as 10 to 900 seconds, is elapsed, the power output from the high-frequency power supply 273 is stopped, and the plasma discharge within the processing chamber 201 is halted. Additionally, valves 253a, 253b, 253d, and 253e are closed, stopping the supply of the first and second processing gases to the processing chamber 201. With these steps completed, the plasma processing step S140 is finished.

[0130] (Vacuum exhaust process S150)

[0131] After the supply of the first and second processing gases is stopped, a vacuum is vented from the processing chamber 201 via the gas exhaust pipe 231. This vents the first and second processing gases, as well as the waste gas generated from the reaction of these gases, from the processing chamber 201 to the outside. Then, the opening of the APC valve 242 is adjusted to bring the pressure inside the processing chamber 201 to the same level as the pressure in the adjacent vacuum delivery chamber.

[0132] (Substrate removal process S160)

[0133] Next, the base 217 is lowered to the wafer 200 transport position, and the wafer 200 is supported on the wafer top pin 266. Then, the gate valve 244 is opened, and the wafer transport mechanism is used to move the wafer 200 out of the processing chamber 201. This completes the substrate processing step of this embodiment.

[0134] [Other Implementation Methods]

[0135] The above describes one example of an embodiment of the present disclosure. However, the embodiments of the present disclosure are not limited to the above content. In addition to the above, various modifications can be made without departing from its spirit.

Claims

1. A substrate processing apparatus, characterized in that, have: The processing container constitutes the processing chamber; A first gas supply system having a first supply port arranged circumferentially along the processing container and supplying a first processing gas circumferentially within the processing chamber; The second gas supply system has a second supply port for supplying a second processing gas into the processing chamber; The plasma generation unit is configured to be disposed along the outer periphery of the processing container and is composed of electrodes supplied with high-frequency power, and to excite the first processing gas supplied to the processing chamber with plasma. A substrate holding stage, which holds the substrate; A plate that forms the top surface of the processing chamber; A cover having a lower surface opposite the upper surface of the plate; and The second buffer section, which is supplied with the second processing gas between the upper surface of the plate and the lower surface of the cover, The second supply port is disposed on the supply pipe and is located below the first supply port. The supply pipe is configured to extend downward from the top surface of the processing chamber and from a position radially central to the processing container, above the first supply port. The upper end of the supply pipe is connected to the second buffer section.

2. The substrate processing apparatus according to claim 1, characterized in that, The electrode is composed of a resonant coil wound around the outer periphery of the processing container.

3. The substrate processing apparatus according to claim 2, characterized in that, The resonant coil has an electrical length that is half or an integer multiple of the wavelength of the supplied high-frequency power.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The plasma generation unit is configured to generate plasma in a cylindrical or annular plasma generation region along the inner circumference of the processing container within the processing chamber. The second supply port is located radially inside the processing container, which is closer to the inner periphery of the plasma generation region.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, A first buffer section, supplied with the first processing gas, is provided in the region along the radially outer end of the processing container. The first supply port is connected to the first buffer section and is arranged along the circumference of the processing container.

6. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The second supply port is disposed between the upper and lower ends of the electrode constituting the plasma generation unit.

7. The substrate processing apparatus according to claim 2 or 3, characterized in that, The second supply port is located at approximately the same height as the midpoint of the resonant coil constituting the plasma generation section.

8. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The second supply port is located below the lower end of the electrode constituting the plasma generation unit.

9. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The second supply port consists of a plurality of nozzles located at the front end of the supply pipe.

10. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The second processing gas is a gas with a different composition than the first processing gas.

11. The substrate processing apparatus according to claim 10, characterized in that, The first processing gas is a gas composed of a first gas and does not contain a second gas. The second processing gas is a gas composed of a second gas and does not contain the first gas.

12. A substrate processing apparatus, characterized in that, have: The processing container constitutes the processing chamber; A first gas supply system having a first supply port arranged circumferentially along the processing container and supplying a first processing gas circumferentially within the processing chamber; The second gas supply system has a second supply port for supplying a second processing gas into the processing chamber; A plasma generation unit, configured to be disposed along the outer periphery of the processing container and composed of electrodes supplied with high-frequency electricity, performs plasma excitation on the first processing gas supplied to the processing chamber; and A substrate holding stage, which holds the substrate. The second supply port is disposed on the supply pipe and is located below the first supply port. The supply pipe is configured to extend downward from the top surface of the processing chamber and from a position radially central to the processing container, above the first supply port. The second supply port is configured to eject the second processing gas at a predetermined angle downwards in a direction perpendicular to the surface of the substrate. The predetermined angle is set based on the distance between the second supply port and the substrate, so that the distance from the center of the substrate to the position where the ejection direction of the second processing gas from the second supply port intersects with the substrate is constant.

13. A substrate processing apparatus, characterized in that, have: The processing container constitutes the processing chamber; A first gas supply system having a first supply port arranged circumferentially along the processing container and supplying a first processing gas circumferentially within the processing chamber; The second gas supply system has a second supply port for supplying a second processing gas into the processing chamber; A plasma generation unit, configured to be disposed along the outer periphery of the processing container and composed of electrodes supplied with high-frequency electricity, performs plasma excitation on the first processing gas supplied to the processing chamber; and A substrate holding stage, which holds the substrate. The second supply port is disposed on the supply pipe and is located below the first supply port. The supply pipe is configured to extend downward from the top surface of the processing chamber and from a position radially central to the processing container, above the first supply port. The first processing gas and the second processing gas are respectively mixtures of a first gas and a second gas. The second gas is at least one of hydrogen-containing gas and inert gas.

14. The substrate processing apparatus according to claim 13, characterized in that, The first gas is an oxygen-containing gas.

15. A method for manufacturing a semiconductor device, comprising a method for manufacturing a semiconductor device using the substrate processing apparatus according to any one of claims 1 to 14, characterized in that, It has the following processes: The process of moving the substrate into the processing chamber; The process of supplying the first processing gas to the processing chamber from the first supply port and supplying the second processing gas to the processing chamber from the second supply port; The process of using the plasma generation unit to excite the first processing gas supplied to the processing chamber with plasma; and The process of supplying the first processing gas and the second processing gas, which have undergone plasma excitation, to the substrate and processing the substrate.

16. A storage medium that can be read by a computer, characterized in that, The device stores a program that enables the substrate processing apparatus according to any one of claims 1 to 14 to perform the following steps via a computer: The step of moving the substrate into the processing chamber; The steps of supplying the first processing gas to the processing chamber from the first supply port and supplying the second processing gas to the processing chamber from the second supply port; The step of using the plasma generation unit to excite the first processing gas supplied to the processing chamber with plasma; as well as The step of supplying the first processing gas and the second processing gas, which have undergone plasma excitation, to the substrate and processing the substrate.

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