Heat dissipation back plate, semiconductor structure and preparation method thereof

Abstract

The application relates to a heat-dissipating back plate, a semiconductor structure and a preparation method of the heat-dissipating back plate. The preparation method of the heat-dissipating back plate comprises the following steps: providing a growth substrate, forming a carbon nanotube layer on the growth substrate; providing a heat-conducting substrate, performing a patterning treatment on the heat-conducting substrate to form a plurality of spaced-apart protruding structures; transferring part of the carbon nanotubes in the carbon nanotube layer to the top of the protruding structures to form carbon nanotube clusters on the top of the protruding structures; providing a back plate, the back plate comprising opposite first and second surfaces, forming a through hole in the back plate; bonding the heat-conducting substrate and the back plate, the heat-conducting substrate being located on the second surface side of the back plate, the protruding structures being inserted into the through hole, and the carbon nanotube clusters extending from the through hole to the first surface side of the back plate. The heat-dissipating back plate prepared by the preparation method of the heat-dissipating back plate makes full use of the super-high heat-conducting performance of the carbon nanotubes in the longitudinal direction, can quickly conduct the heat generated by the chip arranged on the heat-dissipating back plate into the heat-conducting substrate, and realizes high-efficiency heat dissipation.

Description

Technical Field

[0001] This invention relates to the field of backplate heat dissipation technology, and more particularly to heat dissipation backplates, semiconductor structures, and their fabrication methods. Background Technology

[0002] Micro-LED is an emerging display technology. Compared with conventional display technologies, displays based on Micro-LED technology have the characteristics of fast response speed, self-illumination, high contrast, long lifespan, and high photoelectric efficiency.

[0003] In Micro-LED, Mini-LED, and conventional LED backplanes, the backplane circuitry and LED chips generate a significant amount of heat during LED illumination. Without a proper heat dissipation design, this can lead to reduced LED lifespan and luminous efficiency. Therefore, effectively improving the heat dissipation capacity of the backplane is a pressing issue that needs to be addressed. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a heat dissipation backplate, a semiconductor structure and a method for fabricating the same, in order to solve the problem of how to improve the heat dissipation capacity of the backplate.

[0005] This application discloses a method for fabricating a heat dissipation backplate, comprising: providing a growth substrate and forming a carbon nanotube layer on the growth substrate; providing a thermally conductive substrate and patterning the thermally conductive substrate to form a plurality of spaced protrusions; transferring a portion of the carbon nanotubes in the carbon nanotube layer to the top of the protrusions to form a carbon nanotube cluster on the top of the protrusions; providing a backplate, the backplate including a first surface and a second surface opposite to each other, and forming a through hole in the backplate; and bonding the thermally conductive substrate to the backplate, the thermally conductive substrate being located on the second surface side of the backplate, the protrusions being inserted into the through hole, and the carbon nanotube cluster extending from the through hole to the first surface side of the backplate.

[0006] The above-mentioned method for preparing a heat dissipation backplate involves preparing a carbon nanotube layer on a growth substrate, transferring some of the carbon nanotubes to a thermally conductive substrate to form carbon nanoclusters, and then preparing a backplate with through holes. The thermally conductive substrate is then bonded to the backplate, allowing the carbon nanoclusters to extend through the through holes to the surface of the backplate. When a chip is mounted on the surface of the backplate, the ultra-high thermal conductivity of the carbon nanotubes in the vertical direction can be used to quickly transfer the heat generated by the chip into the thermally conductive substrate, thereby achieving efficient heat dissipation.

[0007] Optionally, the step of forming a carbon nanotube layer on a growth substrate includes: forming a dielectric layer on the surface of the growth substrate; forming a catalyst layer on the surface of the dielectric layer; placing the growth substrate in a reaction chamber and introducing a reducing gas and an inert gas into the reaction chamber at a first preset flow rate; when the temperature in the reaction chamber reaches the operating temperature, increasing the flow rate of the inert gas to a second preset flow rate and introducing a reaction gas into the reaction chamber at a third preset flow rate; and controlling the reaction time to generate a carbon nanotube layer with a preset height.

[0008] Optionally, the reducing gas includes hydrogen, the inert gas includes argon, and the reacting gas includes acetylene; the first preset flow rate includes 20 ml / min to 70 ml / min; the second preset flow rate includes 1000 ml / min to 2500 ml / min; the third preset flow rate includes 100 ml / min to 300 ml / min; the operating temperature includes 60℃ to 800℃, and the reaction time includes 10 min to 40 min.

[0009] Optionally, the step of transferring a portion of the carbon nanotubes in the carbon nanotube layer to the top of the protrusion structure to form a carbon nanotube cluster on the top of the protrusion structure includes: forming an adhesion layer on the top of the protrusion structure; bonding the growth substrate to a thermally conductive substrate, with the carbon nanotube layer in contact with the adhesion layer; and removing the growth substrate, with the portion of the carbon nanotubes in contact with the adhesion layer adhering to the top of the protrusion structure to form a carbon nanotube cluster.

[0010] Optionally, the first surface includes a plurality of backplate electrodes, the backplate electrodes including a first electrode and a second electrode, and a through hole is formed between the first electrode and the second electrode.

[0011] By forming a through-hole between the first and second electrodes, the carbon nanotube clusters can pass through the through-hole and come into contact with the center of the chip, thereby improving the efficiency of heat transfer from the chip.

[0012] Optionally, before bonding the second surface of the backplate to the surface of the thermally conductive substrate, the method further includes: forming an adhesive layer on the surface of the thermally conductive substrate; and bonding the thermally conductive substrate to the backplate via the adhesive layer.

[0013] By setting an adhesive layer, the backplate and the thermally conductive substrate can be stably connected together, making it less likely to fall off and improving the structural stability of the heat dissipation backplate.

[0014] Based on the same inventive concept, this application also provides a heat dissipation backplate, including a backplate, a thermally conductive substrate, and a carbon nanotube cluster. The backplate includes opposing first and second surfaces; a through-hole is formed within the backplate; the thermally conductive substrate includes a protruding structure; the thermally conductive substrate is located on the second surface side of the backplate; the protruding structure is inserted into the through-hole; and the carbon nanotube cluster is located on top of the protruding structure and extends from the through-hole to the first surface side of the backplate.

[0015] The aforementioned heat dissipation backplate extends carbon nanotube clusters through through-holes to the backplate surface. When a chip is mounted on the backplate surface, the ultra-high thermal conductivity of the carbon nanotubes in the vertical direction can be used to quickly transfer the heat generated by the chip into the thermally conductive substrate, achieving efficient heat dissipation.

[0016] Optionally, the aforementioned heat dissipation backplate further includes a plurality of backplate electrodes located on the first surface; the backplate electrodes include a first electrode and a second electrode, and a through hole is located between the first electrode and the second electrode.

[0017] By placing the via between the first and second electrodes, it can be ensured that the carbon nanoclusters, after passing through the via, come into contact with the center of the chip, thereby improving the efficiency of heat transfer from the chip.

[0018] Based on the same inventive concept, this application also provides a method for fabricating a semiconductor structure, comprising: fabricating a heat dissipation backplate using the method for fabricating a heat dissipation backplate in any of the foregoing embodiments; providing a chip; and bonding the chip to the side of the backplate away from the thermally conductive substrate, wherein the chip is in contact with the carbon nanotube cluster.

[0019] Based on the same inventive concept, this application also provides a semiconductor structure, including: a heat dissipation backplate as described in any of the above embodiments; and a chip located on the side of the backplate away from the thermally conductive substrate and in contact with the carbon nanotube cluster.

[0020] The aforementioned semiconductor structure utilizes the ultra-high thermal conductivity of carbon nanotubes in the vertical direction to rapidly transfer the heat generated by the chip to the thermally conductive substrate through the carbon nanotube clusters, thereby reducing the chip temperature and improving the chip's lifespan. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a flowchart illustrating a method for preparing a heat dissipation backplate according to one embodiment of this application.

[0023] Figure 2 This is a schematic cross-sectional view of a semiconductor structure obtained after forming a dielectric layer on a growth substrate in one embodiment of this application.

[0024] Figure 3 This is a schematic cross-sectional view of the semiconductor structure obtained after forming the catalyst layer in one embodiment of this application.

[0025] Figure 4This is a schematic cross-sectional view of the semiconductor structure obtained after forming a carbon nanotube layer in one embodiment of this application.

[0026] Figure 5 This is a schematic cross-sectional view of a semiconductor structure obtained after forming a protrusion structure on a backplate in one embodiment of this application.

[0027] Figure 6 This is a schematic cross-sectional view of a semiconductor structure obtained after forming an adhesion layer on the top of a protruding structure in one embodiment of this application.

[0028] Figure 7 This is a schematic cross-sectional view of the semiconductor structure obtained after bonding the growth substrate and the backplate in one embodiment of this application.

[0029] Figure 8 This is a schematic cross-sectional view of the semiconductor structure obtained after forming a carbon nanotube cluster in one embodiment of this application.

[0030] Figures 9 to 12 A schematic diagram of the process of forming a through hole in the back plate in one embodiment of this application.

[0031] Figure 13 This is a schematic cross-sectional view of a semiconductor structure obtained after forming an adhesive layer on the surface of a thermally conductive substrate in one embodiment of this application.

[0032] Figure 14 This is a schematic cross-sectional view of the heat dissipation backplate obtained by bonding the backplate to the thermally conductive substrate in one embodiment of this application.

[0033] Figure 15 This is a schematic cross-sectional view of the semiconductor structure obtained after bonding the chip to a heat sink backplate in one embodiment of this application.

[0034] Explanation of reference numerals in the attached figures:

[0035] 100-Growth substrate; 101-Dielectric layer; 102-Catalyst layer; 103-Carbon nanotube layer; 200-Thermal conductive substrate; 201-Protrusion structure; 202-Adhesion layer; 203-Carbon nanotube cluster; 204-Adhesive layer; 300-Backplate; 301-Backplate electrode; 3011-First electrode; 3012-Second electrode; 302-Patterned photoresist layer; 303-Through hole; 400-Chip. Detailed Implementation

[0036] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0038] In Micro-LED, Mini-LED, and conventional LED backplanes, the backplane circuitry and LED chips generate a lot of heat during the LED lighting process. Without a good heat dissipation design, this will reduce the lifespan of the LED and decrease its luminous efficiency.

[0039] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0040] like Figure 1 As shown, one embodiment of this application discloses a method for preparing a heat dissipation backplate, comprising:

[0041] S10: Provide a growth substrate, and form a carbon nanotube layer on the growth substrate;

[0042] S20: Provide a thermally conductive substrate, and pattern the thermally conductive substrate to form a plurality of spaced protrusions;

[0043] S30: Transfer a portion of the carbon nanotubes in the carbon nanotube layer to the top of the protruding structure to form a carbon nanotube cluster on the top of the protruding structure;

[0044] S40: Provide a backplate, the backplate including opposing first and second surfaces, and forming a through hole within the backplate; and

[0045] S50: The thermally conductive substrate is bonded to the backplate, the thermally conductive substrate is located on the second surface side of the backplate, the protrusion structure is inserted into the through hole, and the carbon nanotube cluster extends from the through hole to the first surface side of the backplate.

[0046] Carbon nanotube thermal conductivity systems have a large average phonon free path and ultra-high thermal conductivity along the longitudinal structure. For example, the thermal conductivity of a single single-walled carbon nanotube and a single multi-walled carbon nanotube can reach 3000 W / (mK), and the theoretically predicted thermal conductivity is as high as 6600 W / (mK), far exceeding the thermal conductivity of metals (e.g., silver 429 W / (mK) and copper 401 W / (mK)).

[0047] The above-mentioned method for preparing a heat dissipation backplate involves preparing a carbon nanotube layer on a growth substrate, transferring some of the carbon nanotubes to a thermally conductive substrate to form carbon nanoclusters, and then preparing a backplate with through holes. The thermally conductive substrate is then bonded to the backplate, allowing the carbon nanoclusters to extend through the through holes to the surface of the backplate. By utilizing the ultra-high thermal conductivity of carbon nanotubes in the vertical direction, the heat generated by the chip mounted on the surface of the backplate is quickly transferred to the thermally conductive substrate, achieving efficient heat dissipation.

[0048] For example, in step S10, the provided growth substrate may include, but is not limited to, a single-crystal silicon substrate. For example, a carbon nanotube layer may be formed on the growth substrate using a catalytic chemical vapor deposition method. Taking a single-crystal silicon substrate as an example, the specific steps for forming a carbon nanotube layer on the single-crystal silicon substrate include:

[0049] S11: A dielectric layer 101 is formed on the surface of the growth substrate 100, such as... Figure 2 As shown.

[0050] For example, the dielectric layer 101 may include, but is not limited to, a silicon dioxide layer. The silicon dioxide layer can be formed on the surface of a single-crystal silicon substrate using plasma-enhanced chemical vapor deposition and thermal oxidation processes.

[0051] S12: A catalyst layer 102 is formed on the surface of the medium layer 101, such as Figure 3 As shown.

[0052] For example, an aluminum oxide layer with a thickness of 5 nm to 15 nm and an iron ion catalyst layer 102 with a thickness of 3 nm to 10 nm can be sequentially deposited on the surface of a silicon dioxide layer using an electron beam deposition process.

[0053] S13: Place the growth substrate 100 in the reaction chamber, and introduce reducing gas and inert gas into the reaction chamber at a first preset flow rate. When the temperature in the reaction chamber reaches the working temperature, increase the flow rate of the inert gas to a second preset flow rate, and introduce reaction gas into the reaction chamber at a third preset flow rate.

[0054] For example, the reaction chamber may include, but is not limited to, a CVD tube furnace (Chemical Vapor Deposition), the reducing gas may include, but is not limited to, hydrogen, the inert gas may include, but is not limited to, argon, and the reaction gas may include, but is not limited to, acetylene.

[0055] For example, after placing the growth substrate 100 in a CVD tube furnace, hydrogen and argon are introduced into the CVD tube furnace at a first preset flow rate. Optionally, the first preset flow rate can be 20 ml / min to 70 ml / min, for example, 20 ml / min, 30 ml / min, 50 ml / min, or 70 ml / min. Simultaneously, the temperature inside the CVD tube furnace is gradually increased to the operating temperature, which can be 60°C to 800°C, for example, 60°C, 160°C, 300°C, 600°C, 700°C, or 800°C. Then, the flow rate of the introduced argon is increased from the first preset flow rate to a second preset flow rate. Optionally, the second preset flow rate can be 1000 ml / min to 2500 ml / min, for example, 1000 ml / min, 1500 ml / min, 2000 ml / min, or 2500 ml / min. Simultaneously, acetylene is introduced into the CVD tubular furnace at a third preset flow rate, which can be 100ml / min to 300ml / min, for example, 100ml / min, 150ml / min, 200ml / min or 300ml / min.

[0056] S14: Controlling the reaction time to generate a carbon nanotube layer 103 with a preset height, such as... Figure 4 As shown.

[0057] Maintaining the above reaction conditions, carbon nanotubes gradually grow on the growth substrate 100, and the height of the carbon nanotubes increases with the reaction time. The preset height of the carbon nanotube layer 103 can be determined based on the structure of the backplane 300 and the chip. For example, the reaction time can be 10 min to 40 min, such as 10 min, 20 min, 30 min, or 40 min; the preset height can be 30 μm to 1000 μm, such as 30 μm, 100 μm, 300 μm, 500 μm, 800 μm, or 1000 μm. For example, the grown carbon nanotubes are perpendicular to the surface of the growth substrate 100.

[0058] In step S20, the thermally conductive substrate 200 may include, but is not limited to, a metal substrate, a highly insulating substrate, or other substrates. For example, a photolithography process can be used to pattern the thermally conductive substrate 200 to form a plurality of spaced-apart protrusions 201, such as... Figure 5 As shown. The spacing between adjacent protrusions 201 can be determined based on the spacing between chips on the backplane 300.

[0059] In step S30, a portion of the carbon nanotubes in the carbon nanotube layer 103 are transferred to the top of the protrusion structure 201 to form a carbon nanotube cluster 203 on the top of the protrusion structure 201. Specific steps include:

[0060] S31: An adhesive layer 202 is formed on the top of the protruding structure 201, such as Figure 6 As shown.

[0061] For example, polyurethane, polydimethylsiloxane, epoxy resin, or metal solder can be sprayed onto the top of the protrusion structure 201.

[0062] S32: The growth substrate 100 is bonded to the thermally conductive substrate 200, and the carbon nanotube layer 103 is in contact with the adhesion layer 202, such as... Figure 7 As shown.

[0063] For example, the top of the protrusion structure 201 can be brought into contact with the top of the carbon nanotube layer 103, a force can be applied, and it can be cured at a certain temperature (e.g., 40℃~90℃) for 30min~90min; the specific curing time can be 30min, 40min, 50min, 60min, 70min, 80min or 90min, etc.

[0064] S33: Remove the growth substrate 100, and adhere the portion of the carbon nanotubes in contact with the adhesion layer 202 to the top of the protruding structure 201 to form a carbon nanotube cluster 203, such as... Figure 8 As shown.

[0065] After being pressed and cured, some carbon nanotubes adhere to the top of the protruding structure 201 through the adhesion layer 202, forming carbon nanoclusters.

[0066] In step S40, the backplate 300 includes opposing first and second surfaces, wherein the first surface is provided with a plurality of backplate electrodes 301, and each backplate electrode 301 includes a first electrode 3011 and a second electrode 3012, such as... Figure 9 As shown. For example, a patterned photoresist layer 302 can be formed on the first surface of the backplane 300, such as... Figure 10 As shown. The backplane 300 is etched based on the patterned photoresist layer 302. For example, deep reactive ion etching (DRIE) can be used to etch through-holes 303 on the backplane 300, such as... Figure 11 As shown. A through-hole 303 is formed between the first electrode 3011 and the second electrode 3012. The width of the through-hole 303 is greater than or equal to the width of the protrusion structure 201. As an example, the width of the through-hole 303 is equal to the width of the protrusion structure 201. After removing the imaged photoresist layer, a backplate 300 with the through-hole 303 is obtained, as shown. Figure 12 As shown.

[0067] In step S50, before the thermally conductive substrate 200 is bonded to the backplate 300, an adhesive layer 204 is formed on the surface of the thermally conductive substrate 200, as follows: Figure 13As shown. For example, the adhesive layer 204 can also be disposed on the second surface of the backplate 300. The adhesive layer 204 can be a thermally conductive adhesive to facilitate efficient heat transfer in the backplate 300 to the thermally conductive substrate 200.

[0068] The thermally conductive substrate 200 is bonded to the backplate 300 via an adhesive layer 204, such as Figure 14 As shown. The second surface of the backplate 300 is bonded to the surface of the thermally conductive substrate 200 via an adhesive layer. A protrusion structure 201 is inserted into a through-hole 303, and a carbon nanotube cluster 203 extends from the through-hole 303 to the first surface of the backplate 300. For example, the width of the carbon nanotube cluster 203 is equal to the width of the protrusion structure 201 and the width of the through-hole 303. For example, the top of the carbon nanotube cluster 203 is higher than the top of the backplate electrode 301.

[0069] One embodiment of this application also discloses a method for fabricating a semiconductor structure, including:

[0070] S100: The heat dissipation backplate is prepared using the heat dissipation backplate preparation method in any of the above embodiments;

[0071] S200: Provides chips;

[0072] S300: The chip is bonded to the side of the backplate 300 away from the thermally conductive substrate 200, and the chip is in contact with the carbon nanotube cluster 203.

[0073] For example, a mass transfer process can be used to transfer the chip to the first surface of the backplane 300, and the chip is bonded to the backplane 300 via backplane electrodes 301. As an example, the chip may include, but is not limited to, an LED chip, with the carbon nanotube cluster 203 in close contact with the insulating layer of the LED chip, rapidly transferring the heat dissipated by the LED chip to the thermally conductive substrate 200, achieving efficient heat dissipation.

[0074] One embodiment of this application also discloses a heat dissipation backplate, such as Figure 14 As shown, the heat dissipation backplate includes a backplate 300, a thermally conductive substrate 200, and a carbon nanotube cluster 203. The backplate includes opposing first and second surfaces, and a through-hole 303 is formed within the backplate 300. The thermally conductive substrate 200 includes a protrusion structure 201. The thermally conductive substrate 200 is located on the second surface side of the backplate 300. The protrusion structure 201 is inserted into the through-hole 303. The carbon nanotube cluster 203 is located on top of the protrusion structure 201 and extends from the through-hole 303 to the first surface side of the backplate 300.

[0075] The aforementioned heat dissipation backplate extends carbon nanotube clusters through through-holes 303 to the surface of the backplate 300. When a chip is mounted on the surface of the backplate 300, the ultra-high thermal conductivity of the carbon nanotubes in the vertical direction can be used to quickly transfer the heat generated by the chip into the thermally conductive substrate 200, thereby achieving efficient heat dissipation.

[0076] In one embodiment, the carbon nanotube cluster 203 is perpendicular to the top of the protrusion structure 201.

[0077] In one embodiment, the width of the carbon nanotube cluster 203 is equal to the width of the protrusion structure 201 and the width of the through-hole 303. Because the widths of the carbon nanotube cluster 203 and the through-hole 303 are equal, not only can heat from the chip be transferred to the thermally conductive substrate 200 through the carbon nanotube cluster 203, but heat generated by the circuitry of the backplane 300 can also be transferred to the thermally conductive substrate 200 through the carbon nanotube cluster 203, thus improving the heat dissipation efficiency of the heat dissipation backplane. Furthermore, since the width of the carbon nanotube cluster 203 is equal to the widths of both the protrusion structure 201 and the through-hole 303, the structure of the heat dissipation background is more stable, and the carbon nanotube cluster 203 is less prone to skewing or breakage.

[0078] In one embodiment, please refer to... Figure 14 The heat dissipation backplate also includes a number of backplate electrodes 301 located on the first surface of the backplate 300. The backplate electrodes 301 include a first electrode 3011 and a second electrode 3012, and a through hole 303 is located between the first electrode 3011 and the second electrode 3012.

[0079] One embodiment of this application also discloses a semiconductor structure, such as Figure 15 As shown, it includes: a heat dissipation backplate as described in any of the above embodiments; and a chip 400 located on the side of the backplate 300 away from the thermally conductive substrate 200 and in contact with the carbon nanotube cluster 203.

[0080] For example, chip 400 may include, but is not limited to, LED chips. Alternatively, the chip may be a Micro-LED chip or a Mini-LED chip.

[0081] The aforementioned semiconductor structure, by adding a thermally conductive substrate 200 to the outside of the backplate 300 and connecting the chip 400 to the thermally conductive substrate 200 through a carbon nanotube cluster 203, fully utilizes the ultra-high thermal conductivity of carbon nanotubes in the vertical direction to transfer the heat generated by the chip 400 during operation to the thermally conductive substrate 200 in a timely and rapid manner, thereby achieving efficient heat dissipation.

[0082] Based on the same inventive concept, one embodiment of this application also discloses a display panel, including the semiconductor structure described in the above embodiments. In this embodiment, the display panel efficiently transfers the heat generated by the chip to a thermally conductive substrate via carbon nanotube clusters, thereby reducing the chip's operating temperature and improving the lifespan of both the chip and the display panel.

[0083] Optionally, the display panel may include, but is not limited to, an LED display panel. This application does not limit the specific form of the display panel.

[0084] It should be understood that, although Figure 1 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 1 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0085] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for preparing a heat dissipation backplate, characterized in that, include: A growth substrate is provided, on which a carbon nanotube layer is formed; A thermally conductive substrate is provided, and the thermally conductive substrate is patterned to form a plurality of spaced protrusions. A portion of the carbon nanotubes in the carbon nanotube layer are transferred to the top of the protruding structure to form a carbon nanotube cluster on the top of the protruding structure; A backplate is provided, the backplate including opposing first and second surfaces, and through holes are formed within the backplate; as well as The thermally conductive substrate is bonded to the backplate, the thermally conductive substrate is located on the second surface side of the backplate, the protrusion structure is inserted into the through hole, and the carbon nanotube cluster extends from the through hole to the first surface side of the backplate.

2. The method for preparing the heat dissipation backplate as described in claim 1, characterized in that, Forming a carbon nanotube layer on the growth substrate includes: A dielectric layer is formed on the surface of the growth substrate; A catalytic layer is formed on the surface of the medium layer; The growth substrate is placed in a reaction chamber, and reducing gas and inert gas are introduced into the reaction chamber at a first preset flow rate. Once the temperature inside the reaction chamber reaches the operating temperature, the flow rate of the inert gas is increased to a second preset flow rate, and reactant gas is introduced into the reaction chamber at a third preset flow rate. By controlling the reaction time, the carbon nanotube layer with a preset height is generated.

3. The method for preparing the heat dissipation backplate as described in claim 2, characterized in that, The reducing gas includes hydrogen, the inert gas includes argon, and the reacting gas includes acetylene; the first preset flow rate includes 20 ml / min to 70 ml / min; the second preset flow rate includes 1000 ml / min to 2500 ml / min; the third preset flow rate includes 100 ml / min to 300 ml / min; the operating temperature includes 60℃ to 800℃, and the reaction time includes 10 min to 40 min.

4. The method for preparing the heat dissipation backplate as described in claim 1, characterized in that, The step of transferring a portion of the carbon nanotubes in the carbon nanotube layer to the top of the protruding structure to form a carbon nanotube cluster on the top of the protruding structure includes: An adhesive layer is formed on the top of the protruding structure; The growth substrate is bonded to the thermally conductive substrate, and the carbon nanotube layer is in contact with the adhesion layer; and Remove the growth substrate, and the portion of the carbon nanotubes in contact with the adhesion layer adheres to the top of the protruding structure to form the carbon nanotube cluster.

5. The method for preparing the heat dissipation backplate as described in claim 1, characterized in that, The first surface includes a plurality of backplate electrodes, the backplate electrodes including a first electrode and a second electrode, and the through hole is formed between the first electrode and the second electrode.

6. The method for preparing the heat dissipation backplate according to any one of claims 1-5, characterized in that, Before bonding the second surface of the backplate to the surface of the thermally conductive substrate, the method further includes: An adhesive layer is formed on the surface of the thermally conductive substrate; the thermally conductive substrate is bonded to the backplate via the adhesive layer.

7. A heat dissipation backplate, manufactured according to the method of any one of claims 1 to 6, characterized in that, include: A back plate includes opposing first and second surfaces; a through hole is formed within the back plate; A thermally conductive substrate, the thermally conductive substrate including a protrusion structure; the thermally conductive substrate is located on the second surface side of the back plate; the protrusion structure is inserted into the through hole; as well as A cluster of carbon nanotubes is located on top of the protruding structure and extends from the through-hole to the first surface side of the back plate.

8. The heat dissipation backplate as described in claim 7, characterized in that, Also includes: Several backplate electrodes are located on the first surface; The backplate electrode includes a first electrode and a second electrode, and the through hole is located between the first electrode and the second electrode.

9. A method for fabricating a semiconductor structure, characterized in that, include: The heat dissipation backplate is prepared using the method described in any one of claims 1-6. Provide chips; as well as The chip is bonded to the backplate on the side away from the thermally conductive substrate, and the chip is in contact with the carbon nanotube cluster.

10. A semiconductor structure, characterized in that, include: The heat dissipation backplate as described in claim 7 or 8; as well as The chip is located on the side of the backplate away from the thermally conductive substrate and is in contact with the carbon nanotube cluster.

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