Heat dissipation back plate and preparation method thereof, semiconductor structure and preparation method thereof

Abstract

The application relates to a heat-dissipating back plate, which comprises a substrate, an oblique suspended electrode structure and a heat-dissipating through hole. The oblique suspended electrode structure is located on the surface of the substrate, and the heat-dissipating through hole is located in the substrate. The heat-dissipating back plate has the oblique suspended electrode structure, which can increase the contact area of the electrode and air and enhance the heat-dissipating capacity of the electrode itself; in combination with the heat-dissipating through hole in the substrate, the heat-dissipating area of the heat-dissipating back plate is increased, and the heat-dissipating back plate can be fully heat-dissipated in combination with other heat-dissipating mechanisms, so that the heat-dissipating capacity of the heat-dissipating back plate is improved.

Description

Technical Field

[0001] This invention relates to the field of backplate heat dissipation technology, and in particular to a heat dissipation backplate and its preparation method, a semiconductor structure and its preparation method. Background Technology

[0002] With the development of technology, LCD technology has become increasingly mature, and televisions have evolved from using traditional cathode ray tubes to using LCD screens. Since LCD screens are passively emitting displays, the LCD panel itself does not emit light. Therefore, LCD screens require a backlight module to provide the light source. Based on the type of light source, backlight modules can be divided into CCFL backlight modules, LED backlight modules, etc. LED backlight modules have become the mainstream backlight source for LCD screens due to their excellent color reproduction and ease of local area control.

[0003] LED backlight modules can generally be divided into edge-lit LED backlight modules and direct-lit LED backlight modules based on the position of the LED light source. Typically, direct-lit LED backlight modules have the LED light source installed at the bottom and mainly include: LED light source, reflector, diffuser plate and / or diffuser film, prism film, brightness enhancement film, etc. Edge-lit LED backlight modules, on the other hand, have the LED light source installed on the side and mainly include: LED light source, reflector, light guide plate, prism film, brightness enhancement film, etc. The main difference between edge-lit and direct-lit LED backlight modules lies in the use of diffuser plates and light guide plates, respectively. The diffuser plate, in conjunction with the bottom light source, mixes the light before providing it to the LCD screen, while the light guide plate, in conjunction with the side light source, guides the light into a surface light source before providing it to the LCD screen.

[0004] As thinner and larger LCD TVs become increasingly mainstream, thinner and larger LCD screens are also inevitable. To accommodate these larger screens, a corresponding number of LED light sources need to be installed on the backlight module. Micro-LED, as an emerging display technology, features fast response time, self-illumination, high contrast, long lifespan, and high photoelectric efficiency.

[0005] In Micro-LED backplanes, the backplane circuitry and LED chips generate a significant amount of heat during LED illumination. Without a proper heat dissipation design, this can lead to reduced LED lifespan and luminous efficiency. Therefore, improving the heat dissipation capacity of the backplane is a crucial issue that needs to be addressed. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this application is to provide a heat dissipation backplate and its preparation method, and a semiconductor structure and its preparation method, in order to solve the problem of how to improve the heat dissipation capacity of the backplate.

[0007] A heat dissipation backplate includes: a substrate; an obliquely suspended electrode structure located on the surface of the substrate; and heat dissipation through holes located within the substrate.

[0008] The aforementioned heat dissipation backplate features an angled, suspended electrode structure, which increases the contact area between the electrodes and the air, enhancing the electrodes' own heat dissipation capacity. Furthermore, the angled, suspended electrode structure allows for a certain space between the chip soldered to the electrodes and the substrate, facilitating chip heat dissipation. Combined with heat dissipation vias within the substrate, this not only increases the heat dissipation area of ​​the backplate but also facilitates integration with other heat dissipation mechanisms, enabling thorough heat dissipation and improving the overall heat dissipation capacity of the backplate.

[0009] Optionally, the inclined suspended electrode structure includes: a first inclined suspended electrode located on the surface of the substrate; and a second inclined suspended electrode located on the surface of the substrate, wherein the extending direction of the second inclined suspended electrode intersects the extending direction of the first inclined suspended electrode.

[0010] Optionally, the heat dissipation through hole is located between the first inclined suspended electrode and the second inclined suspended electrode in the same inclined suspended electrode structure.

[0011] By setting heat dissipation through holes between the first and second inclined suspended electrodes, the effect of the heat dissipation through holes can be maximized, and the heat generated by each chip can be dissipated in a targeted manner.

[0012] Based on the same inventive concept, this application also provides a method for preparing a heat dissipation backplate, comprising: providing a substrate; forming an oblique suspended electrode structure on the surface of the substrate; and forming heat dissipation through holes in the substrate.

[0013] The above-mentioned method for preparing a heat dissipation backplate involves designing the electrode as an obliquely suspended structure, which can increase the contact area between the electrode and the air and enhance the heat dissipation capacity of the electrode itself. Furthermore, by forming heat dissipation through holes in the substrate, the heat dissipation area of ​​the heat dissipation backplate can be increased, while facilitating its combination with other heat dissipation mechanisms (such as using a condenser for heat dissipation), thereby greatly improving the heat dissipation capacity of the heat dissipation backplate.

[0014] Optionally, the step of forming an obliquely suspended electrode structure on the surface of the substrate includes: forming a sacrificial layer on the surface of the substrate; patterning the sacrificial layer to obtain a plurality of trapezoidal image units arranged at intervals; forming the obliquely suspended electrode structure on the sidewall of the trapezoidal image unit, one end of the obliquely suspended electrode structure being connected to the surface of the substrate; and removing the trapezoidal image unit.

[0015] Optionally, forming a heat dissipation via in the substrate includes: flipping the substrate and forming a patterned photoresist layer on the surface of the substrate away from the inclined suspended electrode structure, the patterned photoresist layer defining the shape and position of the heat dissipation via; and forming the heat dissipation via in the substrate based on the patterned photoresist layer.

[0016] Optionally, before flipping the substrate, the method further includes: filling the space between the inclined suspended electrode structures with an electrode protective layer; after forming the heat dissipation via, the method further includes: removing the electrode protective layer.

[0017] By filling the space between the inclined suspended electrode structures with an electrode protective layer, damage to the suspended electrode structures can be avoided during the subsequent process of forming heat dissipation through holes.

[0018] Optionally, the inclined suspended electrode structure includes a first inclined suspended electrode and a second inclined suspended electrode, the first inclined suspended electrode being located on one side wall of the trapezoidal image unit, and the second inclined suspended electrode being located on the opposite side wall of the same trapezoidal image unit; the heat dissipation through hole is located between the first inclined suspended electrode and the second inclined suspended electrode of the same inclined suspended electrode structure.

[0019] By setting a heat dissipation through hole between the first inclined suspended electrode and the second inclined suspended electrode, the function of the heat dissipation through hole can be maximized, and the heat transferred from the electrode to the substrate can be dissipated in a targeted manner.

[0020] Based on the same inventive concept, this application also provides a semiconductor structure, including the heat dissipation backplate described in any of the above embodiments; and a chip located on the surface of the obliquely suspended electrode structure away from the substrate.

[0021] By mounting the chip on the heat sink backplate in the above embodiments, the powerful heat dissipation capacity of the heat sink backplate can be fully utilized to dissipate the heat of the chip itself and the heat transferred to the backplate, thereby reducing the chip's operating temperature and improving its lifespan.

[0022] Based on the same inventive concept, this application also provides a method for fabricating a semiconductor structure, comprising: fabricating the heat dissipation backplate using the method for fabricating a heat dissipation backplate described in any of the above embodiments; forming a chip on the surface of the heat dissipation backplate, wherein the chip is connected to the surface of the inclined suspended electrode structure away from the substrate. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained from these drawings without creative effort.

[0024] Figure 1 This is a flowchart illustrating a method for preparing a heat dissipation backplate according to one embodiment of this application.

[0025] Figure 2 This is a schematic cross-sectional view of a semiconductor structure obtained after forming a sacrificial layer on a substrate in one embodiment of this application.

[0026] Figure 3 This is a schematic diagram of the cross-sectional structure of the semiconductor structure obtained after forming a trapezoidal image unit in one embodiment of this application.

[0027] Figure 4 This is a schematic cross-sectional view of the semiconductor structure obtained after forming an oblique suspended electrode structure on the sidewall of the trapezoidal image unit in one embodiment of this application.

[0028] Figure 5 In order to be in Figure 4 The schematic diagram of the cross-sectional structure of the semiconductor structure obtained after removing the trapezoidal image units is shown.

[0029] Figure 6 This is a schematic cross-sectional view of the semiconductor structure obtained after forming an electrode protective layer in one embodiment of this application.

[0030] Figure 7 This is a schematic cross-sectional view of the semiconductor structure obtained after flipping the substrate and forming a patterned photoresist layer in one embodiment of this application.

[0031] Figure 8 This is a schematic cross-sectional view of the semiconductor structure obtained after forming a heat dissipation via in one embodiment of this application.

[0032] Figure 9 This is a schematic cross-sectional view of the heat dissipation backplate formed in one embodiment of this application.

[0033] Figure 10 This is a schematic cross-sectional view of the chip disposed on a heat sink backplate in one embodiment of this application.

[0034] Figure 11 To use airflow Figure 10 The diagram shows a heat dissipation mechanism.

[0035] Figure 12 To use heat transfer fluid for Figure 10The diagram shows a heat dissipation mechanism.

[0036] Explanation of reference numerals in the attached figures:

[0037] 100-Substrate; 101-Sacrificial layer; 102-Trapezoidal image unit; 103-Electrode protection layer; 104-Patterned photoresist layer; 200-Angled suspended electrode structure; 201-First angled suspended electrode; 202-Second angled suspended electrode; 300-Heat dissipation via; 400-Chip. Detailed Implementation

[0038] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0040] The backplane of a Micro-LED requires the installation of a huge number of Micro-LED chips. The massive number of chips and backplane circuits will generate a lot of heat. If this heat accumulates in the backplane and cannot be dissipated in time, it will seriously affect the lifespan of the Micro-LED chips, not only reducing the lifespan of the chips but also reducing the luminous efficiency of the Micro-LED.

[0041] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0042] like Figure 1 As shown, one embodiment of this application provides a method for preparing a heat dissipation backplate, comprising the following steps:

[0043] S10: Provides a substrate.

[0044] S20: An oblique suspended electrode structure is formed on the surface of the substrate.

[0045] S30: Forming heat dissipation vias in the substrate.

[0046] The above-mentioned method for preparing a heat dissipation backplate involves designing the electrode as an obliquely suspended structure, which can increase the contact area between the electrode and the air and enhance the heat dissipation capacity of the electrode itself. Furthermore, by forming heat dissipation through holes in the substrate, the heat dissipation area of ​​the heat dissipation backplate can be increased, while facilitating its combination with other heat dissipation mechanisms (such as using a condenser for heat dissipation), thereby greatly improving the heat dissipation capacity of the heat dissipation backplate.

[0047] Specifically, in step S10, the substrate may include, but is not limited to, a silicon substrate, a sapphire substrate, and other substrates.

[0048] In step S20, for example, the step of forming the obliquely suspended electrode structure 200 may include:

[0049] S21: A sacrificial layer 101 is formed on the surface of the substrate 100, such as Figure 2 As shown.

[0050] For example, the sacrificial layer 101 may include, but is not limited to, a photoresist layer or a silicon dioxide layer. For instance, a photoresist layer can be spin-coated onto a silicon substrate to form... Figure 2 The semiconductor structure is shown. In subsequent steps, an obliquely suspended electrode structure will be fabricated in the photoresist layer; therefore, the thickness of the photoresist layer is the vertical height of the obliquely suspended electrode structure.

[0051] S22: The sacrificial layer 101 is graphically processed to obtain multiple trapezoidal image units 102 arranged at intervals, such as... Figure 3 As shown.

[0052] For example, a photolithography process can be used to pattern the sacrificial layer 101 to obtain, as shown below. Figure 3 The trapezoidal image unit 102 is shown. By controlling the inclination of the sidewall of the trapezoidal image unit 102, the inclination of the inclined suspended electrode structure can be controlled.

[0053] S23: An obliquely suspended electrode structure 200 is formed on the sidewall of the trapezoidal image unit 102, one end of which is connected to the surface of the substrate 100, such as... Figure 4 As shown.

[0054] For example, a vacuum coating machine can be used to deposit metal electrodes on the sidewalls of the trapezoidal image unit 102 to form obliquely suspended metal electrodes, such as... Figure 4 As shown. The material of the metal electrode can be, but is not limited to, copper, silver, or gold. Since the sidewall of the trapezoidal image unit 102 is inclined, the extension direction of the inclined suspended electrode structure 200 formed on the sidewall of the trapezoidal image unit 102 is oblique to the surface of the substrate 100. Furthermore, one end of the inclined suspended electrode structure 200 is connected to the surface of the substrate 100 for fixed mounting.

[0055] For example, such as Figure 4 As shown, the oblique suspended electrode structure 200 includes a first oblique suspended electrode 201 and a second oblique suspended electrode 202. The first oblique suspended electrode 201 is located on one side wall of the trapezoidal image unit 102, and the second oblique suspended electrode 202 is located on the opposite side wall of the same trapezoidal image unit 102. In this embodiment, two oblique suspended electrodes formed on the side wall of the same trapezoidal image unit 102 constitute one oblique suspended electrode structure 200, and the number of oblique suspended electrode structures 200 formed on the substrate 100 is equal to the number of trapezoidal image units 102.

[0056] S24: Remove trapezoidal image unit 102, such as Figure 5 As shown.

[0057] For example, a photoresist cleaning solution is added to remove the trapezoidal image unit 102 made of photoresist material. The result is as follows: Figure 5 The inclined suspended electrode structure 200 is shown. The inclined suspended electrode structure 200 increases the surface area of ​​the electrode exposed to the air, thereby improving the heat dissipation capacity of the electrode itself; furthermore, the inclined suspended electrode structure 200 also allows for a certain space between the chip soldered to the electrode and the substrate 100, which is beneficial for chip heat dissipation.

[0058] In step S30, for example, the step of forming a heat dissipation via 300 in the substrate 100 includes:

[0059] S31: Flip the substrate 100 and form a patterned photoresist layer on the surface of the substrate 100 away from the oblique suspended electrode structure 200. The patterned photoresist layer is defined as the shape and position of the heat dissipation via.

[0060] S32: A heat dissipation via is formed in the substrate 100 based on a patterned photoresist layer.

[0061] In one embodiment, before flipping the substrate 100 and forming a patterned photoresist layer on the surface of the substrate 100 away from the obliquely suspended electrode structure 200, the following step is further included: filling the space between the obliquely suspended electrode structures 200 with an electrode protective layer 103, such as... Figure 6 As shown. The electrode protective layer 103 can be an electrode protective adhesive. By spin-coating the electrode protective layer 103 between the inclined suspended electrode structures 200, damage to the inclined suspended electrode structures 200 during subsequent processes can be prevented.

[0062] For example, after spin-coating the electrode protective layer 103, the substrate 100 is flipped, and a patterned photoresist layer 104 is formed on the surface of the substrate 100 away from the obliquely suspended electrode structure 200, such as... Figure 7As shown. The patterned photoresist layer 104 is used to define the shape and position of the heat dissipation via 300. As an example, the heat dissipation via 300 is cylindrical in shape, and its position corresponds to the position of the inclined suspended electrode structure 200. That is, the heat dissipation via 300 is located between the first inclined suspended electrode 201 and the second inclined suspended electrode 202 belonging to the same inclined suspended electrode structure 200, as shown. Figure 8 As shown. Therefore, the heat dissipation through holes 300 and the inclined suspended electrode structures 200 are arranged in a one-to-one correspondence.

[0063] For example, the substrate 100 can be etched using deep reactive ion etching technology to form a shape such as Figure 8 The heat dissipation via 300 is shown. Deep reactive ion etching (DRIE) is a highly anisotropic and selective dry etching technique. It utilizes molecular gas plasma in a vacuum system for etching, leveraging ion-induced chemical reactions to achieve anisotropic etching. Ion energy is used to create an easily etchable damage layer on the surface of the etched layer and promote the chemical reaction, while ions also remove surface deposits. The heat dissipation via 300 can be formed in the substrate 100 by controlling process parameters such as etching time, gas flow rate, and power.

[0064] In one embodiment, after forming the heat dissipation via 300, the electrode protective layer 103 is also removed. Simultaneously, the patterned photoresist layer 104 is also removed, ultimately resulting in... Figure 9 The heat dissipation backplate shown.

[0065] One embodiment of this application also discloses a heat dissipation backplate, such as Figure 9 As shown, it includes: a substrate 100, an inclined suspended electrode structure 200, and a heat dissipation via 300. The inclined suspended electrode structure 200 is located on the surface of the substrate 100; the heat dissipation via 300 is located inside the substrate 100.

[0066] The aforementioned heat dissipation backplate has an inclined suspended electrode structure 200, which can increase the contact area between the electrode and the air and enhance the heat dissipation capacity of the electrode itself. Combined with the heat dissipation through holes 300 in the substrate 100, it not only increases the heat dissipation area of ​​the heat dissipation backplate, but also facilitates its integration with other heat dissipation mechanisms to fully dissipate heat from the heat dissipation backplate and improve its heat dissipation capacity.

[0067] For example, the substrate 100 may include, but is not limited to, a silicon substrate 100, a sapphire substrate 100, and other substrates 100. The obliquely suspended electrode structure 200 may be, for example, a metal electrode, and the material of the metal electrode may include, but is not limited to, copper, silver, or gold. For example, one end of the obliquely suspended electrode structure 200 is fixedly connected to the surface of the substrate 100, and the extending direction of the obliquely suspended electrode structure 200 is obliquely intersecting the surface of the substrate 100.

[0068] In one embodiment, such as Figure 9 As shown, the inclined suspended electrode structure 200 includes a first inclined suspended electrode 201 and a second inclined suspended electrode 202. The first and second inclined suspended electrodes 201 and 202 are located on the surface of the substrate 100, and the extending direction of the second inclined suspended electrode 202 intersects the extending direction of the first inclined suspended electrode 201. The tops of the first and second inclined suspended electrodes 201 and 202 are relatively close, while their bottoms are relatively far apart, forming an inclined suspended structure that tilts towards each other. By adjusting the tilt angle of the first and second inclined suspended electrodes 201 and 202, the distance between the tops of the first and second inclined suspended electrodes 201 and 202 can be adjusted to accommodate chips of different specifications mounted on a heat sink backplane.

[0069] In one embodiment, please refer to... Figure 9 The heat dissipation through hole 300 is located between the first inclined suspended electrode 201 and the second inclined suspended electrode 202 of the same inclined suspended electrode structure 200.

[0070] By placing the heat dissipation through-hole 300 between the first inclined suspended electrode 201 and the second inclined suspended electrode 202, when the chip is mounted on the heat dissipation backplate through the inclined suspended electrode structure 200, the heat generated by the chip can be dissipated in a timely and targeted manner, maximizing the effect of the heat dissipation through-hole 300.

[0071] One embodiment of this application also discloses a semiconductor structure, such as Figure 10 As shown, the semiconductor structure includes a heat dissipation backplate and a chip 400. The heat dissipation backplate can be any of the heat dissipation backplates described in the foregoing embodiments, and the chip 400 is located on the surface of the inclined suspended electrode structure 200 away from the substrate 100. For example, the chip 400 can be an LED chip, such as a Mini-LED chip or a Micro-LED chip. Alternatively, the chip 400 can also be other types of chips.

[0072] For example, chip 400 is soldered to the angled suspended electrode structure 200. Each chip 400 corresponds one-to-one with the angled suspended electrode structure 200, as shown below. Figure 10 As shown, the two electrodes of the chip 400 are respectively connected to the first oblique suspended electrode 201 and the second oblique suspended electrode 202 in the same oblique suspended electrode structure 200.

[0073] The angled suspended electrode structure 200 in the heat sink backplate provides good heat dissipation for the chip, and the heat dissipation vias 300 in the substrate 100 create good heat convection conditions, allowing the chip to... Figure 10 The semiconductor structure shown is combined with other heat dissipation mechanisms for more efficient heat dissipation.

[0074] For example, it can be Figure 10 The semiconductor structure shown is combined with a cooling fan (not shown in the figure), such as Figure 11 As shown, the cooling fan provides a continuous airflow to the chip 400, carrying away the heat dissipated by the chip and thus reducing the chip's operating temperature.

[0075] For example, it is also possible to Figure 10 The semiconductor structure shown is placed in a thermally conductive insulating liquid, such as Figure 12 As shown. When multiple chips operate simultaneously, the heat generated by the chips and the backplane circuitry increases dramatically. This is achieved by... Figure 10 The semiconductor structure shown is placed in a thermally conductive insulating liquid. The continuously flowing insulating liquid carries away the heat from the heat sink backplate, which can effectively reduce the temperature of the heat sink backplate and thus reduce the operating temperature of the chip.

[0076] One embodiment of this application also discloses a method for fabricating a semiconductor structure, comprising: fabricating a heat dissipation backplate using the method for fabricating a heat dissipation backplate in any of the foregoing embodiments; forming a chip 400 on the surface of the heat dissipation backplate, wherein the chip 400 is connected to the surface of the inclined suspended electrode structure 200 away from the substrate 100. For example, a soldering process can be used to solder the chip 400 to the inclined suspended electrode structure 200 to fix it to the heat dissipation backplate.

[0077] An embodiment of this application also discloses a display panel, including: a heat dissipation backplate and a plurality of chips 400 located on the surface of the heat dissipation backplate. The heat dissipation backplate is the heat dissipation backplate described in any of the foregoing embodiments, and the chips 400 can be LED chips, such as Micro-LED chips.

[0078] For example, the aforementioned display panel also includes a heat dissipation system, which may be, for example, a cooling fan that continuously blows airflow toward a heat dissipation backplate, such as... Figure 11 As shown, the airflow reaches the chip 400 through the heat dissipation hole 300, cooling the heat dissipation backplate and the chip 400.

[0079] For example, the heat dissipation system could be a coolant supply system, immersing the side of the heat sink away from the chip 400 in coolant, such as... Figure 12 As shown, the heat transferred from the chip 400 to the heat sink backplate and the heat generated by the backplate circuit are carried away by the flowing coolant, thereby achieving the effect of cooling the heat sink backplate and the chip.

[0080] Optionally, the display panel may include, but is not limited to, an LED display panel. This application does not limit the specific form of the display panel.

[0081] It should be understood that, although Figure 1 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 1 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0082] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A heat dissipating backsheet, characterized in that, include: Substrate; An obliquely suspended electrode structure is located on the surface of the substrate; The obliquely suspended electrode structure includes: a first obliquely suspended electrode located on the surface of the substrate; and a second obliquely suspended electrode located on the surface of the substrate, wherein the extending direction of the second obliquely suspended electrode intersects the extending direction of the first obliquely suspended electrode. A heat dissipation via is located within the substrate, between the first and second inclined suspended electrodes of the same inclined suspended electrode structure.

2. A method of producing a heat dissipating back sheet as claimed in claim 1, characterized in that include: Provide substrate; An oblique suspended electrode structure is formed on the surface of the substrate; Heat dissipation vias are formed in the substrate.

3. The method for preparing the heat dissipation backplate as described in claim 2, characterized in that, The method of forming an oblique suspended electrode structure on the surface of the substrate includes: A sacrificial layer is formed on the surface of the substrate; The sacrificial layer is graphically processed to obtain multiple trapezoidal image units arranged at intervals; The oblique suspended electrode structure is formed on the sidewall of the trapezoidal image unit, and one end of the oblique suspended electrode structure is connected to the surface of the substrate; Remove the trapezoidal image unit.

4. The method for preparing the heat dissipation backplate as described in claim 3, characterized in that, The process of forming heat dissipation vias in the substrate includes: The substrate is flipped over, and a patterned photoresist layer is formed on the surface of the substrate away from the oblique suspended electrode structure. The patterned photoresist layer defines the shape and position of the heat dissipation via. The heat dissipation via is formed in the substrate based on the patterned photoresist layer.

5. The method for preparing the heat dissipation backplate as described in claim 4, characterized in that, Before flipping the substrate, the method further includes filling an electrode protective layer between the inclined suspended electrode structures; After forming the heat dissipation through-hole, the process further includes: removing the electrode protective layer.

6. The method for preparing the heat dissipation backplate according to any one of claims 3 to 5, characterized in that, The inclined suspended electrode structure includes a first inclined suspended electrode and a second inclined suspended electrode. The first inclined suspended electrode is located on one side wall of the trapezoidal image unit, and the second inclined suspended electrode is located on the opposite side wall of the same trapezoidal image unit. The heat dissipation through hole is located between the first inclined suspended electrode and the second inclined suspended electrode of the same inclined suspended electrode structure.

7. A semiconductor structure, characterized in that, include: The heat dissipation backplate as described in claim 1; A chip located on the surface of the inclined suspended electrode structure away from the substrate.

8. A method for fabricating a semiconductor structure, characterized in that, include: The heat dissipation backplate is prepared using the method described in any one of claims 2-6; A chip is formed on the surface of the heat dissipation backplate, and the chip is connected to the surface of the inclined suspended electrode structure away from the substrate.

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