magnetic sensor

Abstract

A magnetic sensor according to the present application includes: a top surface substrate; an insulating layer having an inclined surface; an MR element disposed on the inclined surface; a first insulating portion composed of an insulating material, disposed on a portion of the MR element; and a second insulating portion composed of an insulating material, disposed on another portion of the MR element in front in a direction along the inclined surface and away from the top surface of the substrate, as viewed from the first insulating portion.

Description

TECHNICAL FIELD

[0001] The present application relates to a magnetic sensor provided with a magnetic resistance effect element disposed on an inclined surface. BACKGROUND

[0002] In recent years, a magnetic sensor using a magnetic resistance effect element is used for various purposes. In a system including a magnetic sensor, sometimes a magnetic field including a component in a direction perpendicular to a surface of a substrate is intended to be detected by a magnetic resistance effect element disposed on the substrate. In this case, by disposing a soft magnetic body that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by disposing a magnetic resistance effect element on an inclined surface formed on the substrate, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0003] As the magnetic resistance effect element, for example, a spin valve type magnetic resistance effect element is used. The spin valve type magnetic resistance effect element has a magnetization fixed layer having magnetization whose direction is fixed, a free layer having magnetization whose direction can change according to a direction of an applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer.

[0004] A magnetic sensor provided with a magnetic resistance effect element formed on an inclined surface is disclosed in Japanese Patent Application Publication No. 2006-194733. A technique of forming two protective films of different materials on side surfaces of a magnetic resistance effect element to reduce stress applied to the magnetic resistance effect element is disclosed in Japanese Patent Application Publication No. 2008-141210.

[0005] Generally, in a case where a magnetic resistance effect element is formed on an inclined surface, as in the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-194733, side surfaces of the magnetic resistance effect element become tapered. In this regard, a case is considered where a spin valve type magnetic resistance effect element is used as the magnetic resistance effect element, and a technique is used as disclosed in Japanese Patent Application Publication No. 2008-141210 to control characteristics of the magnetic resistance effect element using an insulating layer formed around the magnetic resistance effect element. Areas of a first layer close to the inclined surface and a second layer away from the inclined surface are different from each other. Therefore, an influence from the insulating layer is different between the first layer and the second layer. As a result, sometimes characteristics of the magnetic resistance effect element are different from expected. SUMMARY

[0006] An object of the present application is to provide a magnetic sensor that can achieve desired characteristics in a magnetic sensor provided with a magnetic resistance effect element disposed on an inclined surface.

[0007] The magnetic sensor of the present application includes a substrate having a reference plane, a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane, at least one magnetic detection element disposed on the at least one inclined surface, a first insulating portion composed of an insulating material and disposed on a portion of the at least one magnetic detection element, and a second insulating portion composed of an insulating material and disposed on another portion of the at least one magnetic detection element in front of the first insulating portion in a direction along the at least one inclined surface and away from the reference plane.

[0008] In the magnetic sensor of the present application, the first insulating portion is disposed on a portion of the magnetic detection element disposed on the inclined surface, and the second insulating portion is disposed on another portion of the magnetic detection element. Thus, in the magnetic sensor having the magnetoresistance effect element disposed on the inclined surface, the desired characteristics can be achieved according to the present application.

[0009] Other objects, features and advantages of the present application will become more fully apparent from the following description and appended claims, and will be illustrated by the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 FIG. 1 is a perspective view showing a magnetic sensor of a first embodiment of the present application.

[0011] Figure 2 FIG. 2 is a functional block diagram showing a configuration of a magnetic sensor device including the magnetic sensor of the first embodiment of the present application.

[0012] Figure 3 FIG. 3 is a circuit diagram showing a circuit configuration of a first detection circuit of the first embodiment of the present application.

[0013] Figure 4 FIG. 4 is a circuit diagram showing a circuit configuration of a second detection circuit of the first embodiment of the present application.

[0014] Figure 5 FIG. 5 is a plan view showing a portion of the magnetic sensor of the first embodiment of the present application.

[0015] Figure 6 FIG. 6 is a sectional view showing a portion of the magnetic sensor of the first embodiment of the present application.

[0016] Figure 7 FIG. 7 is a side view showing a magnetoresistance effect element of the first embodiment of the present application.

[0017] Figure 8 FIG. 8 is a sectional view showing the first and second insulating portions of the first example of the first embodiment of the present application.

[0018] Figure 9is a cross-sectional view of the first and second insulating portions of a second example illustrating the first embodiment of the present application.

[0019] Figure 10 is a cross-sectional view of the first and second insulating portions of a third example illustrating the first embodiment of the present application.

[0020] Figure 11 is a cross-sectional view of the first and second insulating portions of a fourth example illustrating the first embodiment of the present application.

[0021] Figure 12 is a cross-sectional view of a part of a magnetic sensor of the second embodiment of the present application. DETAILED DESCRIPTION

[0022] [First Embodiment]

[0023] Hereinafter, an embodiment of the present application will be described in detail with reference to the drawings. First, the structure of a magnetic sensor of a first embodiment of the present application will be described with reference to Figure 1 and Figure 2 Figure 1 is a perspective view of the magnetic sensor of the present embodiment. Figure 2 is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of the present embodiment.

[0024] As shown in Figure 1 , the magnetic sensor 1 has a shape of a rectangular parallelepiped chip. The magnetic sensor 1 has an upper surface la and a lower surface which are located on opposite sides of each other, and four side surfaces which connect the upper surface la and the lower surface. In addition, the magnetic sensor 1 has a plurality of electrode pads provided on the upper surface la.

[0025] Here, the reference coordinate system of the present embodiment will be described with reference to Figure 1 . The reference coordinate system is a coordinate system with the magnetic sensor 1 as a reference, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In the present embodiment, in particular, a direction perpendicular to the upper surface la of the magnetic sensor 1, that is, a direction from the lower surface of the magnetic sensor 1 toward the upper surface la is set as the Z direction. In addition, a direction opposite to the X direction is set as the -X direction, a direction opposite to the Y direction is set as the -Y direction, and a direction opposite to the Z direction is set as the -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0026] ​Hereinafter, the position in front of the reference position in the Z direction will be referred to as "above," and the position on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor 1, the surface located at the Z-direction end will be referred to as the "upper surface," and the surface located at the -Z-direction end will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z-direction" refers to viewing the object from a position separated along the Z-direction.

[0027] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes a plurality of magnetic detection elements, configured to detect the magnetic field of the target object and generate at least one detection signal. In this embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0028] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to process the multiple detection signals generated by the first and second detection circuits 20 and 30 to generate a first detection value and a second detection value that correspond to components of the magnetic field in two mutually different directions at a predetermined reference position. In this embodiment, specifically, the two mutually different directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0029] The processor 40 may also be included in a support body that supports the magnetic sensor 1. This support body has multiple electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected, for example, via the multiple electrode pads of the magnetic sensor 1, the multiple electrode pads of the support body, and multiple bonding wires. When the multiple electrode pads of the magnetic sensor 1 are disposed on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may also be mounted on the upper surface of the support body with its lower surface facing the upper surface of the support body.

[0030] Next, refer to Figures 3-6 The first and second detection circuits 20 and 30 will be described. Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 This is a top view showing a portion of the magnetic sensor 1. Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor 1.

[0031] Here, as Figure 5As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, specifically, the U direction is defined as the direction of rotation from the X direction toward the -Y direction by an amount α, and the V direction is defined as the direction of rotation from the Y direction toward the X direction by an amount α. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0032] In addition, such as Figure 6 As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, specifically, the W1 direction is defined as the direction of rotation by an amount β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by an amount β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0033] The first detection circuit 20 is configured to detect the component of the magnetic field parallel to the W1 direction of the object, and generate at least one first detection signal corresponding to the component. The second detection circuit 30 is configured to detect the component of the magnetic field parallel to the W2 direction of the object, and generate at least one second detection signal corresponding to the component.

[0034] like Figure 3 As shown, the first detection circuit 20 includes: a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0035] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0036] like Figure 4As shown, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31, E32, a first resistance portion R31, a second resistance portion R32, a third resistance portion R33, and a fourth resistance portion R34. The plurality of MR elements of the second detection circuit 30 constitute the first to fourth resistance portions R31, R32, R33, and R34.

[0037] The first resistance portion R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistance portion R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistance portion R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistance portion R34 is provided between the power supply terminal V3 and the signal output terminal E32.

[0038] A voltage or a current of a prescribed magnitude is applied to each of the power supply terminals V2, V3. Each of the ground terminals G2, G3 is grounded.

[0039] Hereinafter, the plurality of MR elements of the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements of the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. The first and second detection circuits 20, 30 are constituent elements of the magnetic sensor 1, and thus it can also be said that the magnetic sensor 1 includes the plurality of first MR elements 50B and the plurality of second MR elements 50C. Note that the symbol 50 is attached to any MR element.

[0040] Figure 7 is a side view showing the MR element 50. The MR element 50 is a spin valve type MR element including a plurality of magnetic layers. The MR element 50 has a magnetization fixed layer 51 having a magnetization whose direction is fixed, a free layer 53 having a magnetization whose direction can change according to the direction of an object magnetic field, and a gap layer 52 disposed between the magnetization fixed layer 51 and the free layer 53. The MR element 50 can also be a TMR (tunneling magnetoresistance) element, or a GMR (giant magnetoresistance) element. In the TMR element, the gap layer 52 is a tunnel barrier layer. In the GMR element, the gap layer 52 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the direction of the magnetization of the free layer 53 with respect to the direction of the magnetization of the magnetization fixed layer 51, and the resistance value becomes a minimum value when the angle is 0°, and the resistance value becomes a maximum value when the angle is 180°. In each MR element 50, the free layer 53 has shape anisotropy in which the easy axis direction becomes a direction orthogonal to the direction of the magnetization of the magnetization fixed layer 51. Furthermore, as a means for setting a prescribed direction to the easy axis of the free layer 53, a magnet that applies a bias magnetic field to the free layer 53 can also be used. The magnetization fixed layer 51, the gap layer 52, and the free layer 53 are sequentially stacked.

[0041] The MR element 50 can also have an antiferromagnetic layer disposed on the opposite side of the gap layer 52 from the magnetization fixed layer 51. The antiferromagnetic layer is composed of an antiferromagnetic material, generates exchange coupling with the magnetization fixed layer 51, and fixes the direction of magnetization of the magnetization fixed layer 51. Alternatively, the magnetization fixed layer 51 can also be a so-called synthetic ferrimagnetic pinned layer (SFP layer). The synthetic ferrimagnetic pinned layer has a laminated ferromagnetic structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and is formed by antiferromagnetically coupling the two ferromagnetic layers.

[0042] Furthermore, the configuration of the layers 51 to 53 of the MR element 50 can also be reversed from the configuration shown in FIG. 1. Figure 7

[0043] In FIG. 2, the solid arrow indicates the direction of magnetization of the magnetization fixed layer 51 of the MR element 50. In addition, the hollow arrow indicates the direction of magnetization of the free layer 53 of the MR element 50 in the case where the MR element 50 is not subjected to the object magnetic field. Figure 3 Figure 4 In the example shown in FIG. 3, the direction of magnetization of the magnetization fixed layer 51 of each of the first and third resistance portions R21, R23 is the W1 direction. The direction of magnetization of the magnetization fixed layer 51 of each of the second and fourth resistance portions R22, R24 is the -W1 direction. In addition, the free layer 53 of each of the plurality of first MR elements 50B has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the U direction. In the case where the first MR element 50B is not subjected to the object magnetic field, the direction of magnetization of the free layer 53 of each of the first and second resistance portions R21, R22 is the U direction. In the above case, the direction of magnetization of the free layer 53 of each of the third and fourth resistance portions R23, R24 is the -U direction.

[0044] In the example shown in FIG. 4, the direction of magnetization of the magnetization fixed layer 51 of each of the first and third resistance portions R31, R33 is the W2 direction. The direction of magnetization of the magnetization fixed layer 51 of each of the second and fourth resistance portions R32, R34 is the -W2 direction. In addition, the free layer 53 of each of the plurality of second MR elements 50C has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the U direction. In the case where the second MR element 50C is not subjected to the object magnetic field, the direction of magnetization of the free layer 53 of each of the first and second resistance portions R31, R32 is the U direction. In the above case, the direction of magnetization of the free layer 53 of each of the third and fourth resistance portions R33, R34 is the -U direction. Figure 3

[0045] In the example shown in FIG. 5, the direction of magnetization of the magnetization fixed layer 51 of each of the first and third resistance portions R41, R43 is the W1 direction. The direction of magnetization of the magnetization fixed layer 51 of each of the second and fourth resistance portions R42, R44 is the -W1 direction. In addition, the free layer 53 of each of the plurality of first MR elements 50B has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the U direction. In the case where the first MR element 50B is not subjected to the object magnetic field, the direction of magnetization of the free layer 53 of each of the first and second resistance portions R41, R42 is the U direction. In the above case, the direction of magnetization of the free layer 53 of each of the third and fourth resistance portions R43, R44 is the -U direction. Figure 4

[0046] ​​​​The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a prescribed direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In the present embodiment, the magnetic field generator includes a coil 80 configured to apply a magnetic field in a prescribed direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0047] In addition, from the viewpoint of the manufacturing accuracy of the MR element 50 and the like, the direction of the magnetization of the magnetization-fixed layer 51 and the direction of the easy magnetization axis of the free layer 53 can also slightly deviate from the above-described direction. In addition, the magnetization of the magnetization-fixed layer 51 can also be configured to include a magnetization component having the above-described direction as a principal component. In this case, the direction of the magnetization of the magnetization-fixed layer 51 becomes the above-described direction or approximately the above-described direction.

[0048] In the present embodiment, the MR element 50 is configured so that a current flows in the stacking direction of the plurality of magnetic layers, that is, the magnetization-fixed layer 51 and the free layer 53. As described later, the magnetic sensor 1 is provided with a lower electrode and an upper electrode for causing a current to flow in the MR element 50. The MR element 50 is disposed between the lower electrode and the upper electrode.

[0049] Hereinafter, the detailed description of the specific structure of the magnetic sensor 1 will be made with reference to Figure 5 and Figure 6 . Figure 6 A part of the cross section of the position indicated by the line 6-6 in Figure 5 is shown.

[0050] The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the upper surface 301a of the substrate 301. In addition, the coil element is a part of a winding of a coil.

[0051] The insulating layer 302 is disposed on the substrate 301. The plurality of lower coil elements 81 is disposed on the insulating layer 302. The insulating layer 303 is disposed around the plurality of lower coil elements 81 on the insulating layer 302. The insulating layers 304, 305 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0052] The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are arranged above the insulating layer 305. The plurality of first MR elements 50B is arranged above the plurality of lower electrodes 61B. The plurality of second MR elements 50C is arranged above the plurality of lower electrodes 61C. The insulating layer 306 is arranged above the plurality of lower electrodes 61B and the plurality of lower electrodes 61C around the plurality of first MR elements 50B and around the plurality of second MR elements 50C. The insulating layer 307 is arranged above the insulating layer 305 around the plurality of lower electrodes 61B, around the plurality of lower electrodes 61C, and around the insulating layer 306.

[0053] The insulating layer 308 is arranged above a part of each of the plurality of first MR elements 50B, above a part of each of the plurality of second MR elements 50C, and above the insulating layers 306, 307. The plurality of upper electrodes 62B is arranged above another part of each of the plurality of first MR elements 50B and above a part of the insulating layer 308. The plurality of upper electrodes 62C is arranged above another part of each of the plurality of second MR elements 50C and above a part of the insulating layer 308. The insulating layer 309 is arranged above another part of the insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

[0054] The insulating layer 310 is arranged above the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 309. The plurality of upper coil elements 82 is arranged above the insulating layer 310. The magnetic sensor 1 can further include an insulating layer, not shown, which covers the plurality of upper coil elements 82 and the insulating layer 310.

[0055] The magnetic sensor 1 includes a support member which supports the plurality of first MR elements 50B and the plurality of second MR elements 50C. The support member has at least one inclined surface which is inclined with respect to the upper surface 301a of the substrate 301. In the present embodiment, in particular, the support member is constituted by the insulating layer 305. Further, in the present embodiment, the support member is constituted by the insulating layer 305 and the insulating layer 307. Figure 5

[0056] The insulating layer 305 has a plurality of convex surfaces 305c which respectively extend in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The entire shape of the convex surface 305c is a semicylindrical curved surface constituted by moving the curved shape (arched shape) of the convex surface 305c shown in FIG. 6 in a direction parallel to the U direction. In addition, the plurality of convex surfaces 305c are arranged at a prescribed interval in a direction parallel to the V direction. Figure 6 The insulating layer 305 has a plurality of convex surfaces 305c which respectively extend in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The entire shape of the convex surface 305c is a semicylindrical curved surface constituted by moving the curved shape (arched shape) of the convex surface 305c shown in FIG. 6 in a direction parallel to the U direction. In addition, the plurality of convex surfaces 305c are arranged at a prescribed interval in a direction parallel to the V direction.

[0057] ​Each of the plurality of convex surfaces 305c has an upper end portion farthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portion of each of the plurality of convex surfaces 305c is an upper end portion extending in a direction parallel to the U direction. Here, one of the plurality of convex surfaces 305c is focused on. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface of the convex surface 305c on the V direction side farther than the upper end portion of the convex surface 305c. The second inclined surface 305b is a surface of the convex surface 305c on the -V direction side farther than the upper end portion of the convex surface 305c. In Figure 5 In this embodiment, the boundary between the first inclined surface 305a and the second inclined surface 305b is indicated by a dashed line.

[0058] The upper end portion of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown indicates the upper end portion of the convex surface 305c.

[0059] The upper surface 301a of the substrate 301 is parallel to the XY plane. Each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the interval between the first inclined surface 305a and the second inclined surface 305b becomes smaller as it is farther from the upper surface 301a of the substrate 301.

[0060] In this embodiment, there are a plurality of convex surfaces 305c, and thus there are also a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b, respectively. The insulating layer 305 has the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b.

[0061] The insulating layer 305 also has a flat surface 305d present around the plurality of convex surfaces 305c. The flat surface 305d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes in the Z direction from the flat surface 305d. In this embodiment, the plurality of convex surfaces 305c are arranged at a prescribed interval. Thus, between two convex surfaces 305c adjacent in the V direction, there is the flat surface 305d.

[0062] The insulating layer 305 includes a plurality of protruding portions each protruding in the Z direction, and a flat portion present around the plurality of protruding portions. Each of the plurality of protruding portions extends in a direction parallel to the U direction and has a convex surface 305c. In addition, the plurality of protruding portions are arranged in a direction parallel to the V direction at a prescribed interval. The thickness (dimension in the Z direction) of the flat portion is substantially constant. In addition, the insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305.

[0063] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 305b. As described above, the first inclined surfaces 305a and the second inclined surfaces 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Thus, it can be said that multiple first MR elements 50B and multiple second MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 305 is a component for supporting each of the multiple first MR elements 50B and multiple second MR elements 50C in an inclined manner relative to the XY plane.

[0064] Furthermore, in this embodiment, the first inclined surface 305a is curved. Therefore, the first MR element 50B is bent along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the first MR element 50B is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the first MR element 50B, namely the W1 direction and the -W1 direction, is also the direction in which the wiring that connects to the portion of the first inclined surface 305a near the first MR element 50B extends.

[0065] Similarly, in this embodiment, the second inclined surface 305b is curved. Therefore, the second MR element 50C is bent along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the second MR element 50C is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the second MR element 50C, i.e., the W2 direction and the -W2 direction, is also the direction in which the wiring connected to the portion of the second inclined surface 305b near the second MR element 50C extends.

[0066] like Figure 5 As shown, a plurality of first MR elements 50B are arranged in parallel in both the U and V directions. On a first inclined surface 305a, the plurality of first MR elements 50B are arranged in a single column. Similarly, a plurality of second MR elements 50C are arranged in parallel in both the U and V directions. On a second inclined surface 305b, the plurality of second MR elements 50C are arranged in a single column. In this embodiment, the columns of the plurality of first MR elements 50B and the columns of the plurality of second MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0067] Further, one first MR element 50B and one second MR element 50C adjacent to each other when viewed from the Z direction can or can not be staggered in a direction parallel to the U direction. Further, two first MR elements 50B adjacent to each other with one second MR element 50C therebetween when viewed from the Z direction can or can not be staggered in a direction parallel to the U direction. Further, two second MR elements 50C adjacent to each other with one first MR element 50B therebetween when viewed from the Z direction can or can not be staggered in a direction parallel to the U direction.

[0068] The plurality of first MR elements 50B are connected in series through the plurality of lower electrodes 61B and the plurality of upper electrodes 62B. Here, reference is made to FIG. 6. Figure 7 The connection method of the plurality of first MR elements 50B will be described in detail. In Figure 7 , the symbol 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and the symbol 62 denotes an upper electrode corresponding to an arbitrary MR element 50. As Figure 7 indicated, each lower electrode 61 has an elongated shape. A gap is formed between two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrode 61. On the upper surface of the lower electrode 61, an MR element 50 is disposed near each of the two ends in the longitudinal direction. Further, each upper electrode 62 has an elongated shape and electrically connects two MR elements 50 disposed on two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrode 61 to each other.

[0069] Although not illustrated, one MR element 50 located at one end of a column of the plurality of MR elements 50 arranged in one column is connected to another MR element 50 located at one end of a column of the other plurality of MR elements 50 adjacent to each other in a direction intersecting the longitudinal direction of the lower electrode 61. The two MR elements 50 are connected to each other by an electrode not illustrated. The electrode not illustrated can be an electrode connecting the lower surfaces of the two MR elements 50 to each other or the upper surfaces of the two MR elements 50 to each other.

[0070] In the case where the MR element 50 illustrated in Figure 7 is the first MR element 50B, Figure 7 the lower electrode 61 illustrated corresponds to the lower electrode 61B, Figure 7 and the upper electrode 62 illustrated corresponds to the upper electrode 62B. Further, in this case, the longitudinal direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0071] Similarly, the plurality of second MR elements 50C are connected in series through the plurality of lower electrodes 61C and the plurality of upper electrodes 62C. The description of the connection method of the plurality of first MR elements 50B described above also applies to the connection method of the plurality of second MR elements 50C. In Figure 7The MR element 50 illustrated in the case of the second MR element 50C, Figure 7 The lower electrode 61 illustrated corresponds to the lower electrode 61C, Figure 7 The upper electrode 62 illustrated corresponds to the upper electrode 62C. In this case, the long side direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0072] Each of the plurality of upper coil elements 82 extends in a direction parallel to the Y direction. In addition, the plurality of upper coil elements 82 are arranged in a manner in which they are juxtaposed in the X direction. In the present embodiment, in particular, two upper coil elements 82 overlap each other in each of the plurality of first MR elements 50B and the plurality of second MR elements 50C when viewed from the Z direction.

[0073] Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. In addition, the plurality of lower coil elements 81 are arranged in a manner in which they are juxtaposed in the X direction. The shape and arrangement of the plurality of lower coil elements 81 can be the same as or different from those of the plurality of upper coil elements 82. Figure 5 and Figure 6 In the example illustrated, the size of each of the plurality of lower coil elements 81 in the X direction is smaller than the size of each of the plurality of upper coil elements 82 in the X direction. In addition, the interval between two lower coil elements 81 adjacent in the X direction is smaller than the interval between two upper coil elements 82 adjacent in the X direction.

[0074] In the example illustrated, Figure 5 and Figure 6 In the example illustrated, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are electrically connected in a manner in which they constitute the coil 80 that applies a magnetic field in a direction parallel to the X direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In addition, the coil 80 can be configured to, for example, apply a magnetic field in the X direction to the free layer 53 of the first and second resistance portions R21, R22 of the first detection circuit 20 and the first and second resistance portions R31, R32 of the second detection circuit 30, and apply a magnetic field in the -X direction to the free layer 53 of the third and fourth resistance portions R23, R24 of the first detection circuit 20 and the third and fourth resistance portions R33, R34 of the second detection circuit 30. In addition, the coil 80 can be controlled by the processor 40.

[0075] Next, the first and second detection signals will be described. First, reference will be made to Figure 3The first detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the Wl direction changes, the resistance values of the resistance sections R21 to R24 of the first detection circuit 20 each change in such a manner that the resistance values of the resistance sections R21, R23 increase and the resistance values of the resistance sections R22, R24 decrease, or the resistance values of the resistance sections R21, R23 decrease and the resistance values of the resistance sections R22, R24 increase. Thereby, the potentials of the signal output terminals E21, E22 each change. The first detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and generate a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22.

[0076] Next, the operation of the processor 40 will be described. Figure 4 The second detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistance sections R31 to R34 of the second detection circuit 30 each change in such a manner that the resistance values of the resistance sections R31, R33 increase and the resistance values of the resistance sections R32, R34 decrease, or the resistance values of the resistance sections R31, R33 decrease and the resistance values of the resistance sections R32, R34 increase. Thereby, the potentials of the signal output terminals E31, E32 each change. The second detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and generate a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32.

[0077] Next, the operation of the processor 40 will be described.

[0078] The processor 40 generates the first and second detection values Sv, Sz, for example, as follows. The processor 40 first generates a value S1 by an operation including finding the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and generates a value S2 by an operation including finding the difference S31-S32 between the second detection signal S31 and the second detection signal S32. Next, the processor 40 calculates values S3, S4 using the following equations (1), (2).

[0079] S3 = (S2 + S1) / (2 cos α)... (1)

[0080] S4 = (S2 - S1) / (2 sin α)... (2)

[0081] The first detection value Sv can also be the value S3 itself, or a value to which a prescribed modification such as a gain adjustment and an offset adjustment is applied to the value S3. Similarly, the second detection value Sz can also be the value S4 itself, or a value to which a prescribed modification such as a gain adjustment and an offset adjustment is applied to the value S4.

[0082] Next, the structural features of the magnetic sensor 1 of the present embodiment will be described. First, a first example will be described. Figure 8 is a cross-sectional view showing the first and second insulating portions of the first example.

[0083] Figure 8 A cross section intersecting the MR element 50 disposed on an arbitrary inclined surface 305e, that is, a cross section parallel to the VZ plane is shown. Hereinafter, the cross section parallel to the VZ plane will be referred to as a VZ cross section. Figure 8 The VZ cross section shown can also be a VZ cross section of a cross section of the MR element 50 viewed from a position in the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively. Figure 6 Similarly, a VZ cross section of a cross section of the MR element 50 viewed from a position in the U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the first MR element 50B, the lower electrode 61B, and the first inclined surface 305a, respectively. Alternatively, Figure 8 The VZ cross section shown can also be a VZ cross section of a cross section of the MR element 50 viewed from a position in the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively.

[0084] Here, as shown in Figure 8 and Figure 9 , a first direction D1 and a second direction D2 parallel to the VZ plane are defined. The first direction D1 is a direction along the inclined surface 305e and away from the reference plane. In the present embodiment, the upper surface 301a of the substrate 301 (refer to Figure 6 ) is set as the reference plane. The Z direction is one direction perpendicular to the reference plane (the upper surface 301a of the substrate 301). The second direction D2 is a direction along the inclined surface 305e and close to the reference plane (the upper surface 301a of the substrate 301).

[0085] Further, in the following description, a direction along the inclined surface 305e and parallel to the first direction D1 (a direction parallel to the second direction D2) will be simply referred to as a direction along the inclined surface 305e. This direction is also a direction along the inclined surface 305e and in which the distance from the reference plane (the upper surface 301a of the substrate 301) changes.

[0086] The MR element 50 has a lower surface 50a opposed to the inclined surface 305e, an upper surface 50b on the opposite side of the lower surface 50a, a first side surface 50c, and a second side surface 50d. The first side surface 50c connects an end portion of the lower surface 50a in the second direction D2 and an end portion of the upper surface 50b in the second direction D2. The second side surface 50d is disposed in front of the MR element 50 in the first direction D1 as viewed from the first side surface 50c. The second side surface 50d connects an end portion of the lower surface 50a in the first direction D1 and an end portion of the upper surface 50b in the first direction D1.

[0087] The lower electrode 61 is interposed between the MR element 50 and the inclined surface 305e. The lower electrode 61 has a lower surface 61a opposed to the inclined surface 305e, an upper surface 61b on the opposite side of the lower surface 61a, and two side surfaces connecting the lower surface 61a and the upper surface 61b (see FIG. 6). Figure 6 In addition, the lower electrode 61 can also be formed from the inclined surface 305e to the flat surface 305d. In this case, one of the two side surfaces of the lower electrode 61 is disposed on the inclined surface 305e, and the other is disposed on the flat surface 305d. Alternatively, the lower electrode 61 can also be disposed entirely on the inclined surface 305e. In this case, both of the two side surfaces of the lower electrode 61 are disposed on the inclined surface 305e.

[0088] The magnetic sensor 1 is provided with a first insulating portion 311 and a second insulating portion 312. Each of the first and second insulating portions 311, 312 can be composed of one insulating layer or can be composed of a plurality of insulating layers. In the present embodiment, in particular, each of the first and second insulating portions 311, 312 is composed of the insulating layers 306, 308 shown in FIG. 6. Figure 6 In addition, each of the insulating layers 306, 308 can be composed of one insulating film or can be composed of a plurality of insulating films.

[0089] Since each of the insulating layers 306, 308 is formed of an insulating material, each of the first and second insulating portions 311, 312 is also formed of an insulating material. As the insulating material forming each of the first and second insulating portions 311, 312 (each of the insulating layers 306, 308), for example, Al2O3, SiO2, or the like is used.

[0090] The first insulating portion 311 is disposed on a portion of the MR element 50. In the present embodiment, in particular, the first insulating portion 311 is disposed on the first side surface 50c of the MR element 50 and on a portion of the upper surface 50b of the MR element 50.

[0091] The second insulating portion 312 is disposed on another portion of the MR element 50 in front of the first insulating portion 311 in the first direction D1. In the present embodiment, in particular, the second insulating portion 312 is disposed on the second side surface 50d of the MR element 50 and on another portion of the upper surface 50b of the MR element 50.

[0092] The upper electrode 62 (see Figure 7 ) is disposed on the MR element 50, the first insulating portion 311, and the second insulating portion 312, and is electrically connected to the MR element 50. A portion of each of the first and second insulating portions 311, 312 is interposed between the MR element 50 and the upper electrode 62. Another portion of each of the first and second insulating portions 311, 312 is interposed between the lower electrode 61 and the upper electrode 62.

[0093] Thus far, a feature of the structure of the magnetic sensor 1 has been described with focus on one inclined surface 305e (the first inclined surface 305a or the second inclined surface 305b). In the present embodiment, a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b are present. The above description of one inclined surface 305e is also applicable to each of the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b.

[0094] Here, focus is placed on one first inclined surface 305a and one second inclined surface 305b included in one convex surface 305c, one first MR element 50B disposed on the one first inclined surface 305a, and one second MR element 50C disposed on the one second inclined surface 305b (see Figure 6 ). The second insulating portion 312 disposed on a portion of the first MR element 50B and the second insulating portion 312 disposed on a portion of the second MR element 50C can also be one insulating portion that is not divided and is continuous. In the present embodiment, in particular, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and over the second inclined surface 305b.

[0095] Next, focus is placed on: two convex surfaces 305c adjacent in a direction parallel to the V direction, a first inclined surface 305a included in the convex surface 305c on the -V direction side, a second inclined surface 305b included in the convex surface 305c on the V direction side, one first MR element 50B disposed on the one first inclined surface 305a, and one second MR element 50C disposed on the one second inclined surface 305b (see Figure 6). The first insulating portion 311 disposed on a portion of the first MR element 50B and the first insulating portion 311 disposed on a portion of the second MR element 50C can also be one insulating portion that is continuous without being divided. In the present embodiment, in particular, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and over the second inclined surface 305b.

[0096] Although not illustrated, the first insulating portion 311 and the second insulating portion 312 can also be one insulating portion that is continuous without being divided. In the present embodiment, in particular, the insulating layer 308 can also be formed over the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b without being divided. In addition, over each of the plurality of first inclined surfaces 305a, the insulating layer 306 can also be formed around the first MR element 50B without being divided. Likewise, over each of the plurality of second inclined surfaces 305b, the insulating layer 306 can also be formed around the second MR element 50C without being divided.

[0097] Next, a second example will be described. Figure 9 is a cross-sectional view illustrating the first and second insulating portions 311, 312 of the second example. In the second example, the area of the upper surface 50b of the MR element 50 covered by the first insulating portion 311 is larger than the area of the upper surface 50b of the MR element 50 covered by the second insulating portion 312.

[0098] Next, a third example will be described. Figure 10 is a cross-sectional view illustrating the first and second insulating portions 311, 312 of the third example. In the third example, the area of the upper surface 50b of the MR element 50 covered by the second insulating portion 312 is larger than the area of the upper surface 50b of the MR element 50 covered by the first insulating portion 311.

[0099] Next, a fourth example will be described. Figure 11 is a cross-sectional view illustrating the first and second insulating portions 311, 312 of the fourth example. In the fourth example, the second insulating portion 312 covers the second side surface 50d of the MR element 50 but does not cover the upper surface 50b of the MR element 50.

[0100] Next, the effects and advantages of the magnetic sensor 1 of the present embodiment will be described. In the present embodiment, the insulating layers 306, 308 are disposed around the MR element 50. The first and second insulating portions 311, 312 are each constituted by the insulating layers 306, 308. It is known that an insulating portion (insulating layer) disposed around an MR element 50 has an influence on the characteristics of the MR element 50. In the present embodiment, the first insulating portion 311 is disposed on a portion of the MR element 50 and the second insulating portion 312 is disposed on another portion of the MR element 50. Thus, according to the present embodiment, a desired characteristic can be achieved.

[0101] Next, as the characteristics of the MR element 50, the sensitivity of the MR element 50 is described as an example. The free layer 53 has a shape anisotropy in which the easy magnetization axis direction is a direction parallel to the U direction. In a case where no object magnetic field is applied to the MR element 50, the magnetization direction of the free layer 53 is the U direction or the -U direction. In the MR element 50 of this structure, if the anisotropy of the free layer 53 in a direction orthogonal to the U direction is increased, the magnetization direction of the free layer 53 becomes likely to change, and as a result, the sensitivity of the MR element 50 is improved.

[0102] For example, by configuring the free layer 53 with a magnetic layer of negative magnetostriction and configuring the first and second insulating portions 311, 312 with an insulating layer that applies a compressive stress to the free layer 53, it is possible to increase the anisotropy of the free layer 53 in a direction orthogonal to the U direction. In the present embodiment, in particular, the first insulating portion 311 is disposed on a portion of the MR element 50, and the second insulating portion 312 is disposed on another portion of the MR element 50. In addition, in the present embodiment, in particular, at least one of the first and second insulating portions 311, 312 is disposed on the upper surface 50b of the MR element 50. Thus, according to the present embodiment, compared to a case where the first and second insulating portions 311, 312 are not disposed on a portion of the MR element 50, it is possible to increase the anisotropy of the free layer 53 in a direction orthogonal to the U direction, and it is possible to improve the sensitivity of the MR element 50.

[0103] Further, the MR element 50 is formed on the inclined surface 305e. Due to a limitation of the manufacturing process of forming the MR element 50, each of the first and second side surfaces 50c, 50d is tapered. Therefore, the area of the free layer 53 at a position from the inclined surface 305e becomes small, and the length of the outer periphery of the free layer 53 also becomes short. If the first and second insulating portions 311, 312 are not disposed on a portion of the MR element 50, sometimes it is not possible to apply a compressive stress of a sufficient size to the free layer 53. In contrast, in the present embodiment, as described above, the first and second insulating portions 311, 312 are disposed on a portion of the MR element 50. Thus, according to the present embodiment, it is possible to apply a compressive stress of a sufficient size to the free layer 53.

[0104] Further, the size of the compressive stress applied to the free layer 53 can be controlled by the amount of climb of each of the first and second insulating portions 311, 312 onto the MR element 50, and the structure of each of the first and second insulating portions 311, 312. For example, in a case where each of the first and second insulating portions 311, 312 is a three-layer structure of Al2O3 / SiO2 / Al2O3, it is possible to adjust the size of the compressive stress by changing the ratio of the thickness of each layer.

[0105] Furthermore, when the compressive stress applied to the free layer 53 increases, the hysteresis of the sensitivity of the MR element 50 sometimes increases. As described above, the hysteresis of the sensitivity of the MR element 50 can be adjusted by controlling the magnitude of the compressive stress applied to the free layer 53.

[0106] Furthermore, up to this point, as Figure 7 As shown, the example is illustrated where the free layer 53 is positioned further away from the inclined surface 305e than the magnetized fixed layer 51. However, the structure of the MR element 50 is not limited to this case. Figure 7 In the example shown, the magnetization fixing layer 51 can also be disposed at a position further away from the inclined surface 305e than the free layer 53. In this case, the materials of the magnetization fixing layer 51, the first insulating portion 311, and the second insulating portion 312 can be selected in such a way that the magnetization direction of the magnetization fixing layer 51 remains unchanged. In this case, by disposing the first and second insulating portions 311 and 312 on a portion of the MR element 50, it is possible to suppress changes in the magnetization direction of the magnetization fixing layer 51 compared to the case where the first and second insulating portions 311 and 312 are not disposed on a portion of the MR element 50.

[0107] [Second Implementation]

[0108] Next, refer to Figure 12 The magnetic sensor 1 of the second embodiment of the present invention will be described. Figure 12 This is a cross-sectional view showing a portion of the magnetic sensor 1 according to this embodiment.

[0109] In this embodiment, the overall shape of each of the plurality of convex surfaces 305c of the insulating layer 305 is such that Figure 12 The triangular shape of the convex surface 305c shown is a triangular roof shape formed by moving it along a direction parallel to the U direction. Furthermore, the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the insulating layer 305 are each plane. Each of the plurality of first inclined surfaces 305a is a plane parallel to both the U and W1 directions. Each of the plurality of second inclined surfaces 305b is a plane parallel to both the U and W2 directions.

[0110] Insulation layer 305 and Figure 6 Similarly, the example shown may also include multiple protrusions forming multiple convex surfaces 305c. Alternatively, the insulating layer 305 may also include multiple grooves arranged in a direction parallel to the V direction. Each of the multiple grooves has a first wall surface corresponding to the first inclined surface 305a and a second wall surface corresponding to the second inclined surface 305b. A convex surface 305c is formed by the first wall surface of a groove and the second wall surface of another groove adjacent to that groove on the -V direction side.

[0111] In addition, Figure 12In the illustrated example, each of the plurality of groove portions also has a bottom surface corresponding to the flat surface 305d. However, each of the plurality of groove portions can not have a bottom surface.

[0112] The other structures, actions, and effects of the present embodiment are the same as those of the first embodiment.

[0113] Furthermore, the present application is not limited to the above-described embodiments, and various modifications can be made. For example, the shapes of the first and second insulating portions 311 and 312 are not limited to the examples shown in the embodiments, but are arbitrary, as long as the requirements of the claims are satisfied.

[0114] In addition, the magnetic sensor 1 can further include a third detection circuit configured to detect a component of the object magnetic field in a direction parallel to the XY plane and generate at least one third detection signal having a corresponding relationship with the component. In this case, the processor 40 can be configured to generate a detection value corresponding to a component of the object magnetic field in a direction parallel to the U direction based on the at least one third detection signal. The third detection circuit can be integrated with the first and second detection circuits 20 and 30, or can be included in a chip different from the first and second detection circuits 20 and 30.

[0115] As described above, the magnetic sensor of the present application includes a substrate having a reference plane, a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane, at least one magnetic detection element disposed on the at least one inclined surface, a first insulating portion composed of an insulating material and disposed on a portion of the at least one magnetic detection element, and a second insulating portion composed of an insulating material and disposed on another portion of the at least one magnetic detection element in front of the first insulating portion in a direction along the at least one inclined surface and away from the reference plane.

[0116] The magnetic sensor of the present application can further include an upper electrode disposed on the at least one magnetic detection element, the first insulating portion, and the second insulating portion and electrically connected to the at least one magnetic detection element. In addition, the magnetic sensor of the present application can further include a lower electrode interposed between the at least one magnetic detection element and the at least one inclined surface and electrically connected to the at least one magnetic detection element.

[0117] In addition, in the magnetic sensor of the present application, the at least one magnetic detection element can also have a lower surface facing the at least one inclined surface, an upper surface on the opposite side of the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first insulating portion can be disposed at least on the first side surface. The second insulating portion can be disposed at least on the second side surface. The first insulating portion can also be disposed on a portion of the upper surface of the at least one magnetic detection element. The second insulating portion can also be disposed on a portion of the upper surface of the at least one magnetic detection element. Alternatively, the second insulating portion can not be disposed on the upper surface of the at least one magnetic detection element.

[0118] In addition, in the magnetic sensor of the present application, the at least one inclined surface can also be a curved surface. Alternatively, the at least one inclined surface can also be a flat surface.

[0119] In addition, in the magnetic sensor of the present application, the at least one inclined surface can also include a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element can include a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface. The support member can have a convex surface extending away from the reference plane. The convex surface can include the first inclined surface and the second inclined surface. The second insulating portion disposed on the first magnetic detection element and the second insulating portion disposed on the second magnetic detection element can be one insulating portion.

[0120] In addition, in the magnetic sensor of the present application, the at least one inclined surface can also include a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element can include a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface. The support member can have a first convex surface and a second convex surface extending away from the reference plane, respectively. The first convex surface can include the first inclined surface. The second convex surface can include the second inclined surface. The first insulating portion disposed on the first magnetic detection element and the first insulating portion disposed on the second magnetic detection element can be one insulating portion.

[0121] In addition, in the magnetic sensor of the present application, the first insulating portion and the second insulating portion can each include a first insulating layer composed of an insulating material and a second insulating layer composed of an insulating material and disposed on the first insulating layer. The at least one magnetic detection element can have a lower surface facing the at least one inclined surface, an upper surface on the opposite side of the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first insulating layer can be in contact with the first side surface and the second side surface.

[0122] As described above, various modes and modifications of the present application can be implemented. Therefore, the present application can be implemented in modes other than the above-described best modes, within the scope of the claims.

Claims

1. A magnetic sensor, characterized by comprising: a substrate having a reference plane; a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane; at least one magnetic detection element disposed on the at least one inclined surface; a first insulating portion composed of an insulating material and disposed on a portion of the at least one magnetic detection element; and a second insulating portion composed of an insulating material and disposed on another portion of the at least one magnetic detection element in front in a direction along the at least one inclined surface and away from the reference plane, as viewed from the first insulating portion.

2. The magnetic sensor according to claim 1, characterized by further comprising an upper electrode disposed on the at least one magnetic detection element, the first insulating portion, and the second insulating portion and electrically connected to the at least one magnetic detection element.

3. The magnetic sensor according to claim 1, characterized by further comprising a lower electrode interposed between the at least one magnetic detection element and the at least one inclined surface and electrically connected to the at least one magnetic detection element.

4. The magnetic sensor according to claim 1, characterized in that the at least one magnetic detection element has a lower surface facing the at least one inclined surface, an upper surface on an opposite side from the lower surface, and first and second side surfaces connecting the lower surface and the upper surface, the first insulating portion is disposed at least on the first side surface, and the second insulating portion is disposed at least on the second side surface.

5. The magnetic sensor according to claim 4, characterized in that the first insulating portion is further disposed on a portion of the upper surface of the at least one magnetic detection element.

6. The magnetic sensor according to claim 4, characterized in that the second insulating portion is further disposed on a portion of the upper surface of the at least one magnetic detection element.

7. The magnetic sensor according to claim 4, characterized in that the second insulating portion is not disposed on the upper surface of the at least one magnetic detection element.

8. The magnetic sensor according to claim 1, characterized in that the at least one inclined surface is a curved surface.

9. The magnetic sensor according to claim 1, characterized in that the at least one inclined surface is a flat surface.

10. The magnetic sensor according to claim 1, characterized in that the at least one inclined surface includes first and second inclined surfaces facing different directions, the at least one magnetic detection element includes a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface, the support member has a convex surface extending away from the reference plane, the convex surface includes the first and second inclined surfaces, and the second insulating portion disposed on the first magnetic detection element and the second insulating portion disposed on the second magnetic detection element are one insulating portion.

11. The magnetic sensor according to claim 1, characterized in that ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The at least one inclined surface includes a first inclined surface and a second inclined surface facing different directions from each other, The at least one magnetic detection element includes a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface, The support member has a first convex surface and a second convex surface each extending in a direction away from the reference plane, The first convex surface includes the first inclined surface, The second convex surface includes the second inclined surface, The first insulating portion disposed on the first magnetic detection element and the first insulating portion disposed on the second magnetic detection element are one insulating portion.

12. The magnetic sensor according to claim 1, wherein The first insulating portion and the second insulating portion each include a first insulating layer made of an insulating material and a second insulating layer made of an insulating material and disposed on the first insulating layer.

13. The magnetic sensor according to claim 12, wherein The at least one magnetic detection element has a lower surface facing the at least one inclined surface, an upper surface on an opposite side from the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface, The first insulating layer of the first insulating portion is in contact with the first side surface, The first insulating layer of the second insulating portion is in contact with the second side surface.

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