Ion implantation machine matching method, device, equipment and storage medium

Abstract

The present disclosure provides an ion implantation machine matching method, device, equipment and storage medium, which relates to the technical field of semiconductors. The method mainly comprises: determining a preset implantation condition; under the preset implantation condition, correcting the dose of an initial new machine according to the process parameters of the initial new machine and a reference machine to obtain a corrected new machine; performing secondary ion mass spectrometry (SIMS) analysis on the corrected new machine and the reference machine to obtain a SIMS result; and determining a matching result of the corrected new machine and the reference machine according to the SIMS result. The ion implantation machine matching method, device, equipment and storage medium provided by the present disclosure can reduce the probability that the RS matching of the new machine and the reference machine is not matched by the SIMS result, thereby further improving the matching efficiency of the new machine and the reference machine and reducing the matching cost of the new machine and the reference machine.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to an ion implantation machine matching method, apparatus, device and storage medium. Background Technology

[0002] In semiconductor manufacturing, it is necessary to match the process parameters of a newly installed ion implanter with a baseline ion implanter. Current techniques typically involve first calculating the difference in sheet resistance (RS) between the new and baseline implanters, then fine-tuning the dose compensation coefficient of the new implanter based on this difference to match the RS of the two systems. Finally, the degree of overlap in the secondary ion mass spectrometry (SIMS) profile is used to confirm the match between the new and baseline implanters.

[0003] However, the aforementioned existing technology may result in RS matching between the new device and the reference device, but SIMS results may not match. In this case, it is necessary to readjust the dose compensation coefficient of the new device and then remeasure the SIMS until the SIMS results are completely matched. This not only reduces the matching efficiency between the new device and the reference device, but also increases the matching cost of the new device and the reference device due to repeated SIMS measurements. Summary of the Invention

[0004] This disclosure provides an ion implantation machine matching method, apparatus, equipment, and storage medium to at least solve the above-mentioned technical problems existing in the prior art.

[0005] According to a first aspect of this disclosure, an ion implantation equipment matching method is provided, the method comprising: determining preset implantation conditions; under the preset implantation conditions, performing dose correction on the initial new equipment based on process parameters of an initial new equipment and a reference equipment to obtain a corrected new equipment; performing secondary ion mass spectrometry (SIMS) analysis on the corrected new equipment and the reference equipment to obtain SIMS results; and determining the matching result between the corrected new equipment and the reference equipment based on the SIMS results.

[0006] In one possible implementation, dosage correction is performed on the initial new installation station based on the process parameters of the initial new installation station and the reference station to obtain a corrected new installation station. This includes: performing dosage correction on the initial new installation station based on the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first new installation station; performing thermal wave testing on the first new installation station and the reference station to obtain a first thermal wave map corresponding to the first new installation station and a second thermal wave map corresponding to the reference station; and performing thermal wave matching on the first new installation station based on the first thermal wave map and the second thermal wave map to obtain the corrected new installation station.

[0007] In one possible implementation, the step of performing dose correction on the initial new installation station based on the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first new installation station includes: measuring the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first sheet resistance value corresponding to the initial new installation station and a second sheet resistance value corresponding to the reference station; calculating a dose correction amount for the initial new installation station based on the first sheet resistance value and the second sheet resistance value; and performing dose correction on the initial new installation station based on the dose correction amount to obtain the first new installation station.

[0008] In one possible implementation, calculating the dose correction amount for the initial new installation station based on the first sheet resistance value and the second sheet resistance value includes: determining multiple sets of correction points based on the preset injection conditions and the first sheet resistance value, wherein each correction point includes a preset injection dose and a corresponding first sheet resistance value; performing linear fitting on the multiple sets of correction points to obtain a correction curve; and calculating the dose correction amount for the initial new installation station based on the correction curve and the second sheet resistance value.

[0009] In one possible implementation, the step of performing dose correction on the initial new installation station according to the dose correction amount to obtain the first new installation station includes: determining whether the dose correction amount meets a first preset threshold to obtain a first determination result; if the first determination result is yes, then the initial new installation station is determined as the first new installation station; if the first determination result is no, then the dose correction is performed on the initial new installation station according to the dose correction amount to obtain the first new installation station.

[0010] In one possible implementation, the step of performing thermography matching on the first new installation station based on the first thermography and the second thermography to obtain the corrected new installation station includes: calculating the difference value between the first thermography and the second thermography; determining whether the difference value meets a second preset threshold to obtain a second determination result; if the second determination result is yes, then the first new installation station is determined as the corrected new installation station; if the second determination result is no, then thermography matching is performed on the first new installation station, and dose correction is performed again on the first new installation station after thermography matching based on the sheet resistance values ​​of the first new installation station after thermography matching and the reference station, until the second determination result is yes.

[0011] In one possible implementation, before performing dose correction on the initial new installation station based on the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first new installation station, the method further includes: performing thermal wave testing on the initial new installation station and the reference station to obtain a third thermal wave map corresponding to the initial new installation station and a fourth thermal wave map corresponding to the reference station; determining whether the difference value between the third thermal wave map and the fourth thermal wave map meets a third preset threshold to obtain a third determination result; if the third determination result is negative, then performing thermal wave matching on the initial new installation station based on the third thermal wave map and the fourth thermal wave map.

[0012] In one possible implementation, determining the matching result between the modified new installation station and the reference station based on the SIMS result includes: if the SIMS result matches, then the modified new installation station and the reference station are determined to be successfully matched; if the SIMS result does not match, then the modified new installation station and the reference station are determined to be unmatched.

[0013] According to a second aspect of this disclosure, an ion implantation equipment matching device is provided, the device comprising: a first determining module for determining preset implantation conditions; a correcting module for performing dose correction on the initial new implantation equipment based on process parameters of the initial new implantation equipment and a reference equipment under the preset implantation conditions to obtain a corrected new implantation equipment; an analysis module for performing secondary ion mass spectrometry (SIMS) analysis on the corrected new implantation equipment and the reference equipment to obtain SIMS results; and a second determining module for determining the matching result between the corrected new implantation equipment and the reference equipment based on the SIMS results.

[0014] According to a third aspect of this disclosure, an electronic device is provided, comprising:

[0015] At least one processor; and

[0016] A memory communicatively connected to the at least one processor; wherein,

[0017] The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the methods described in this disclosure.

[0018] According to a fourth aspect of this disclosure, a non-transitory computer-readable storage medium is provided storing computer instructions for causing the computer to perform the methods described in this disclosure.

[0019] This disclosure discloses an ion implantation equipment matching method, apparatus, device, and storage medium. Under preset implantation conditions, the dosage of the initial new implantation equipment is corrected according to the process parameters of the initial new implantation equipment and the reference equipment to obtain a corrected new implantation equipment. Specifically, when correcting the dosage of the initial new implantation equipment, the dosage is first corrected according to the sheet resistance values ​​of the initial new implantation equipment and the reference equipment to obtain a first new implantation equipment. Then, thermal wave testing is performed on the first new implantation equipment and the reference equipment to obtain a first thermal wave map corresponding to the first new implantation equipment and a second thermal wave map corresponding to the reference equipment. Finally, thermal wave matching is performed on the first new implantation equipment based on the first thermal wave map and the second thermal wave map to obtain the corrected new implantation equipment. Therefore, by combining dose correction based on sheet resistance values ​​with thermography matching based on thermograms, dose correction is performed on the initial new instrument, resulting in a corrected new instrument. Then, a second ion mass spectrometry (SIMS) analysis is performed on the corrected new instrument and the reference instrument. This reduces the probability of RS matching between the new instrument and the reference instrument, but SIMS results do not match, thereby further improving the matching efficiency between the new instrument and the reference instrument and reducing the matching cost.

[0020] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this disclosure, nor is it intended to limit the scope of this disclosure. Other features of this disclosure will become readily apparent from the following description. Attached Figure Description

[0021] The above and other objects, features, and advantages of this disclosure will become readily apparent from the following detailed description of exemplary embodiments, taken in conjunction with the accompanying drawings. Several embodiments of this disclosure are illustrated in the drawings by way of example and not limitation, in which:

[0022] In the accompanying drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

[0023] Figure 1 A flowchart illustrating an ion implantation equipment matching method according to a first embodiment of this disclosure is shown;

[0024] Figure 2 A flowchart illustrating an ion implantation equipment matching method according to a second embodiment of this disclosure is shown;

[0025] Figure 3 A flowchart illustrating an ion implantation equipment matching method according to a third embodiment of this disclosure is shown;

[0026] Figure 4 A flowchart illustrating an ion implantation equipment matching method according to a fourth embodiment of this disclosure is shown.

[0027] Figure 5 A schematic diagram of a scenario for an ion implantation equipment matching method according to the fourth embodiment of this disclosure is shown;

[0028] Figure 6 A schematic diagram of the structure of an ion implantation machine matching device according to the seventh embodiment of this disclosure is shown;

[0029] Figure 7 A schematic diagram of the composition structure of an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0030] To make the objectives, features, and advantages of this disclosure more apparent and understandable, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0031] Figure 1 A flowchart illustrating an ion implantation equipment matching method according to a first embodiment of this disclosure is shown, as follows: Figure 1 As shown, the method mainly includes:

[0032] Step S101: Determine the preset injection conditions.

[0033] In this embodiment, it is first necessary to determine the preset implantation conditions, which are ion implantation conditions set in advance. Specifically, the preset implantation conditions can be set within the implantation range of the ion implanter. For example, if the implantation range of the ion implanter is: implantation dose: 1E12~1E14, implantation angle: 0 degrees, implantation energy: 50 keV (Kev), then the preset implantation conditions can be set as: implantation dose: 1E13, implantation angle: 0 degrees, implantation energy: 50 keV (Kev).

[0034] Step S102: Under preset injection conditions, the dosage of the initial new equipment is corrected according to the process parameters of the initial new equipment and the reference equipment to obtain the corrected new equipment.

[0035] In this embodiment, after determining the preset implantation conditions, the dosage of the initial new installation station can be corrected based on the process parameters of the initial new installation station and the reference station under the preset implantation conditions, thereby obtaining a corrected new installation station. Specifically, two identical wafers can be taken and ion implanted on the initial new installation station and the reference station respectively, under the preset implantation conditions. The process parameters of the two wafers after ion implantation can characterize the process parameters of the initial new installation station and the reference station. The difference in the process parameters of the two wafers can reflect the difference in dosage between the initial new installation station and the reference station. Therefore, the dosage of the initial new installation station can be corrected based on the difference in the process parameters of the two wafers after ion implantation, thereby obtaining a corrected new installation station.

[0036] In one possible implementation, the sheet resistance values ​​of the initial new implantation site and the reference site can be used to perform dose trimming on the initial new implantation site. For example, under preset implantation conditions, the difference between the sheet resistance values ​​of the initial new implantation site and the reference site after ion implantation is calculated, and then the initial new implantation site is dose trimmed based on the difference to match the sheet resistance values ​​of the initial new implantation site and the reference site, thereby obtaining the trimmed new implantation site.

[0037] In one possible implementation, the sheet resistance and thermograms of the initial new implantation site and the reference site can be used to perform dose correction on the initial new implantation site. For example, under preset implantation conditions, the difference in sheet resistance values ​​between the initial new implantation site and the reference site after ion implantation is calculated. Then, the initial new implantation site is dose-corrected (dosetrim) based on this difference to match the sheet resistance values ​​of the initial new implantation site and the reference site. Afterward, under preset implantation conditions, the initial new implantation site is matched (TW match) based on the degree of overlap of the thermograms (TW) of the initial new implantation site and the reference site after ion implantation to match the TW patterns of the initial new implantation site and the reference site, thereby obtaining the corrected new implantation site.

[0038] Step S103: Perform secondary ion mass spectrometry (SIMS) analysis on the modified new instrument and the reference instrument to obtain the SIMS results.

[0039] Step S104: Determine the matching result between the new installation station and the reference station based on the SIMS result.

[0040] In this embodiment, the initial new instrumentation stage is dose-corrected to obtain a corrected new instrumentation stage. Then, secondary ion mass spectrometry (SIMS) analysis is performed on the corrected new instrumentation stage and the reference instrumentation stage. The matching result between the corrected new instrumentation stage and the reference instrumentation stage is determined based on the SIMS results. Specifically, SIMS analysis is an analytical method that uses mass spectrometry to analyze secondary ions generated by sputtering after primary ions are incident on a target, thereby obtaining elemental information of the material surface or depth profile. The SIMS results include a SIMS profile, which visually reflects the change in ion density with sample depth. Therefore, the matching result between the corrected new instrumentation stage and the reference instrumentation stage can be determined based on the degree of overlap between their SIMS profiles.

[0041] In one possible implementation, if the SIMS results match, meaning the overlap between the SIMS curves of the newly installed machine and the reference machine reaches a preset threshold, then the matching between the newly installed machine and the reference machine is determined to be successful; if the SIMS results do not match, meaning the overlap between the SIMS curves of the newly installed machine and the reference machine does not reach the preset threshold, then the matching between the newly installed machine and the reference machine is determined to be unsuccessful. Specifically, the preset threshold can be set according to actual conditions, and this disclosure does not limit it.

[0042] In the first embodiment of this disclosure, preset injection conditions are first determined. Then, under the preset injection conditions, the initial new instrument is dose-corrected according to the process parameters of the initial new instrument and the reference instrument to obtain a corrected new instrument. When performing dose correction on the initial new instrument, dose correction based on sheet resistance value can be combined with thermography matching based on thermogram to perform dose correction on the initial new instrument and obtain a corrected new instrument. Then, a second ion mass spectrometry (SIMS) analysis is performed on the corrected new instrument and the reference instrument. This can reduce the probability of RS matching between the new instrument and the reference instrument, but SIMS results do not match, thereby further improving the matching efficiency between the new instrument and the reference instrument and reducing the matching cost between the new instrument and the reference instrument.

[0043] Figure 2 A flowchart illustrating a method for matching an ion implantation equipment according to a second embodiment of this disclosure is shown, as follows: Figure 2 As shown, step S102 includes:

[0044] Step S201: Based on the sheet resistance values ​​of the initial new installation station and the reference station, the dosage of the initial new installation station is corrected to obtain the first new installation station.

[0045] Step S202: Perform thermal wave testing on the first new installation station and the reference station to obtain the first thermal wave map corresponding to the first new installation station and the second thermal wave map corresponding to the reference station.

[0046] Step S203: Based on the first thermal waveform and the second thermal waveform, perform thermal waveform matching on the first new installation station to obtain the corrected new installation station.

[0047] In this embodiment, the initial new implantation station is first dose-corrected based on the sheet resistance values ​​of the initial new implantation station and the reference station. For example, the difference in sheet resistance values ​​between the initial new implantation station and the reference station after ion implantation is calculated, and then the dose is corrected based on this difference to obtain a first new implantation station. The sheet resistance values ​​of the first new implantation station and the reference station are matched. Then, thermography is performed on the first new implantation station and the reference station to obtain a first thermogram corresponding to the first new implantation station and a second thermogram corresponding to the reference station. The first new implantation station is then thermography matched based on the first and second thermograms to obtain a corrected new implantation station. The thermography test utilizes laser focusing on the surface of the material to detect the light reflectivity of the tested material. The thermogram can be obtained based on the light reflectivity, and the thermogram can indirectly characterize the ion implantation dose. The essence of thermography matching is to perform dose correction on the first new implantation station so that the thermograms of the first new implantation station match those of the reference station.

[0048] In one possible implementation, since the first thermogram can indirectly characterize the ion implantation dose of the first new instrument and the second thermogram can indirectly characterize the ion implantation dose of the reference instrument, it can be seen that the difference between the first thermogram and the second thermogram can reflect the dose difference between the first new instrument and the reference instrument. Therefore, the dose of the first new instrument can be corrected according to the difference between the first thermogram and the second thermogram, so that the thermogram of the corrected first new instrument matches that of the reference instrument, thereby obtaining the corrected new instrument.

[0049] In the second embodiment of this disclosure, when performing dose correction on the initial new instrument, dose correction based on sheet resistance value is combined with thermography matching based on thermogram to obtain a corrected new instrument. This ensures a high accuracy rate in correcting the initial new instrument. Subsequently, a second ion mass spectrometry (SIMS) analysis is performed on the corrected new instrument and the reference instrument. This reduces the probability of RS matching between the new instrument and the reference instrument, but SIMS results do not match, thereby further improving the matching efficiency between the new instrument and the reference instrument and reducing the matching cost between the new instrument and the reference instrument.

[0050] Figure 3 A flowchart illustrating an ion implantation equipment matching method according to a third embodiment of this disclosure is shown, as follows: Figure 3 As shown, step S201 mainly includes:

[0051] Step S301: Measure the sheet resistance values ​​of the initial new installation platform and the reference platform to obtain the first sheet resistance value corresponding to the initial new installation platform and the second sheet resistance value corresponding to the reference platform.

[0052] Step S302: Calculate the dose correction amount for the initial new installation station based on the first block resistance value and the second block resistance value.

[0053] Step S303: Based on the dose correction amount, perform dose correction on the initial new installation station to obtain the first new installation station.

[0054] In this embodiment, the first sheet resistance value corresponding to the initial new installation station and the second sheet resistance value corresponding to the reference station are first measured. Then, based on the first and second sheet resistance values, the dose correction amount of the initial new installation station is calculated. The dose correction amount represents the injection dose of the initial new installation station when the sheet resistance values ​​of the initial new installation station and the reference station are matched. Based on the dose correction amount, the dose of the initial new installation station is corrected to obtain the first new installation station, and the sheet resistance values ​​of the first new installation station and the reference station are matched.

[0055] Figure 4 A flowchart illustrating an ion implantation equipment matching method according to a fourth embodiment of this disclosure is shown, as follows: Figure 4 As shown, step S302 mainly includes:

[0056] Step S401: Based on the preset injection conditions and the first block resistance value, determine multiple sets of correction points. The correction points include the preset injection dose and the corresponding first block resistance value.

[0057] In this embodiment, multiple sets of correction points need to be determined first based on preset implantation conditions and a first sheet resistance value. Each correction point includes a preset implantation dose and its corresponding first sheet resistance value. Specifically, multiple preset implantation doses can be pre-set based on the implantation dose in the preset implantation conditions. Multiple identical wafers are then used for ion implantation on an initial new assembly platform according to these preset implantation doses. The first sheet resistance value corresponding to each preset implantation dose is measured, thereby obtaining multiple sets of correction points.

[0058] In one possible implementation, if the implantation dose in the preset implantation conditions is 1E13, then preset implantation doses of 0.9E13, 1E13, and 1.1E13 can be set in advance, while the implantation dose of the reference equipment remains at 1E13. Then, four identical wafers are taken. Three wafers are ion implanted on the initial new equipment with preset implantation doses of 0.9E13, 1E13, and 1.1E13, respectively, and the first sheet resistance values ​​of the three wafers are measured to obtain three sets of correction points. One wafer is ion implanted on the reference equipment with an implantation dose of 1E13, and the second sheet resistance value of this wafer is measured. Specifically, the implantation dose and sheet resistance value corresponding to each wafer are shown in Table 1 below:

[0059] Table 1

[0060]

[0061]

[0062] Among them, the sheet resistance value of wafer #1 is 170.5, which is the second sheet resistance value. The three sets of correction points are (0.9, 174), (1, 169) and (1.1, 165).

[0063] Step S402: Perform linear fitting on multiple sets of correction points to obtain the correction curve.

[0064] Step S403: Calculate the dose correction amount for the initial new installation station based on the correction curve and the second block resistance value.

[0065] In this embodiment, after determining multiple sets of correction points, linear fitting is required to obtain correction curves. The correction curves characterize the change of the first sheet resistance value of the initial new device with the injected dose. Then, the second sheet resistance value of the reference device is substituted into the correction curves, and the calculated injected dose is the injected dose of the initial new device when the first sheet resistance value of the initial new device matches the second sheet resistance value of the reference device. This value can be used as the dose correction amount of the initial new device.

[0066] Figure 5 A schematic diagram of a scenario for an ion implantation equipment matching method according to a fourth embodiment of this disclosure is shown, as follows: Figure 5 As shown, the straight line L is the correction curve fitted based on the correction points (0.9, 174), (1, 169), and (1.1, 165), and its linear equation is y = -45 + 214.33. Substituting the second block resistance value of 170.5 into the correction curve, i.e., setting y = 170.5, we calculate x = 0.97, which is the initial dose correction amount for the new installation station. It should be emphasized that the process of calculating the dose correction amount when performing thermal matching on the first new installation station in step S203 is similar to steps S401 to S403, and will not be described in detail here.

[0067] In the third and fourth embodiments of this disclosure, the dose correction amount for the initial new device is calculated based on the first sheet resistance value of the initial new device and the second sheet resistance value of the reference device. Specifically, in calculating the dose correction amount, multiple sets of correction points are first determined based on preset injection conditions and the first sheet resistance value. Then, linear fitting is performed on these multiple sets of correction points to obtain a correction curve. Finally, the dose correction amount for the initial new device is calculated based on the correction curve and the second sheet resistance value. Therefore, substituting the second sheet resistance value of the reference device into the correction curve yields a more accurate dose correction amount, thereby further ensuring that the sheet resistance value of the initial new device matches that of the reference device after correction.

[0068] In the fifth embodiment of this disclosure, step S303 mainly includes:

[0069] Determine whether the dose correction amount meets the first preset threshold to obtain the first determination result; if the first determination result is yes, then the initial new installation station is determined as the first new installation station; if the first determination result is no, then the dose correction is performed on the initial new installation station according to the dose correction amount to obtain the first new installation station.

[0070] In this embodiment, it is first determined whether the dose correction amount meets the first preset threshold to obtain the first determination result. The first preset threshold can be the range of difference between the dose correction amount set in advance and the injection dose in the preset injection conditions. If the actual difference between the dose correction amount and the injection dose in the preset injection conditions meets the range of difference, it is considered that the dose of the initial new installation unit matches that of the reference unit, and the initial new installation unit can be directly determined as the first new installation unit. If the actual difference between the dose correction amount and the injection dose in the preset injection conditions does not meet the range of difference, it is considered that the dose of the initial new installation unit does not match that of the reference unit. At this time, the dose of the initial new installation unit is corrected according to the dose correction amount to obtain the first new installation unit.

[0071] In one embodiment, the first preset threshold can be between -0.03 and 0.03. Taking a dose correction of 0.97 and an injection dose of 1 in the preset injection conditions as an example, since the actual difference between the dose correction and the injection dose in the preset injection conditions is 0.03, it meets the first preset threshold. Therefore, the dose of the initial new installation station matches that of the reference station, and the initial new installation station can be directly identified as the first new installation station. Thus, directly identifying the initial new installation station whose dose correction meets the first preset threshold as the first new installation station can further improve the matching efficiency between the initial new installation station and the reference station.

[0072] In the sixth embodiment of this disclosure, step S203 mainly includes:

[0073] Calculate the difference between the first thermogram and the second thermogram; determine whether the difference meets the second preset threshold to obtain the second judgment result; if the second judgment result is yes, then the first new installation station is determined as the corrected new installation station; if the second judgment result is no, then perform thermo-matching on the first new installation station, and based on the sheet resistance values ​​of the thermo-matched first new installation station and the reference station, re-correct the dose of the thermo-matched first new installation station until the second judgment result is yes.

[0074] In this embodiment, when performing thermography matching on the first new installation station based on the first thermogram of the first new installation station and the second thermogram of the reference station, the difference value between the first and second thermograms is first calculated. This difference value characterizes the degree of overlap between the first and second thermograms and can reflect the dose difference between the first new installation station and the reference station. Then, it is determined whether the difference value meets a second preset threshold. The second preset threshold can be a pre-set range of difference between the first and second thermograms. If the difference value meets the second preset threshold, the first new installation station is determined as a corrected new installation station. If the difference value does not meet the second preset threshold, thermography matching is performed on the first new installation station, and the dose is corrected again on the first new installation station after thermography matching based on the sheet resistance values ​​of the first new installation station and the reference station after thermography matching, until the second determination result is yes.

[0075] In one possible implementation, the second preset threshold can be 3%. The system determines whether the difference value meets the second preset threshold, i.e., whether the difference value is less than or equal to 3%. If the difference value is less than or equal to 3%, it proves that the thermograms of the first new installation unit and the reference unit are matched, and the first new installation unit can be directly identified as a corrected new installation unit. If the difference value is greater than 3%, it proves that the thermograms of the first new installation unit and the reference unit are mismatched. In this case, thermogram matching of the first new installation unit is required to match the thermograms of the first new installation unit and the reference unit. Since the sheet resistance values ​​may not match after thermogram matching, it is necessary to re-correct the dosage of the first new installation unit after thermogram matching based on the sheet resistance values ​​of the first new installation unit and the reference unit, until the second determination result is yes. Therefore, directly identifying the first new installation unit whose difference value meets the second preset threshold as a corrected new installation unit can further improve the matching efficiency between the initial new installation unit and the reference unit.

[0076] In the seventh embodiment of this disclosure, before step S201, the method further includes:

[0077] Thermal wave tests are performed on the initial new installation station and the reference station to obtain the third thermal wave map corresponding to the initial new installation station and the fourth thermal wave map corresponding to the reference station; it is determined whether the difference between the third thermal wave map and the fourth thermal wave map meets the third preset threshold to obtain the third judgment result; if the third judgment result is not, thermal wave matching is performed on the initial new installation station based on the third thermal wave map and the fourth thermal wave map.

[0078] In this embodiment, before performing dose correction on the initial new device based on the sheet resistance values ​​of the initial new device and the reference device, it is necessary to perform thermography on the initial new device and the reference device to obtain a third thermogram corresponding to the initial new device and a fourth thermogram corresponding to the reference device. Then, it is determined whether the difference between the third and fourth thermograms meets a third preset threshold, resulting in a third judgment result. The third preset threshold can be a pre-set range of difference between the third and fourth thermograms. The third preset threshold and the second preset threshold can be the same or different. If the third judgment result is negative, then thermography matching is performed on the initial new device based on the third and fourth thermograms, so that the thermogram of the initial new device matches the thermogram of the reference device. Accordingly, step S201 can be performing dose correction on the thermography-matched initial new device based on the sheet resistance values ​​of the thermography-matched initial new device and the reference device. Therefore, when performing dose correction on the initial new equipment, the dose correction based on sheet resistance value is not only combined with thermographic matching based on thermograms once, but a dose correction process of first thermographic matching based on thermograms, dose correction based on sheet resistance value, and second thermographic matching based on thermograms is formed. This improves the accuracy of dose correction on the initial new equipment and further reduces the probability of RS matching between the new equipment and the reference equipment, but SIMS result mismatch.

[0079] Figure 6 A schematic diagram of the structure of an ion implantation machine matching device according to the seventh embodiment of this disclosure is shown, as follows: Figure 6 As shown, the device mainly includes:

[0080] The first determining module 10 is used to determine the preset injection conditions; the correction module 11 is used to perform dose correction on the initial new instrumentation station according to the process parameters of the initial new instrumentation station and the reference instrumentation station under the preset injection conditions to obtain the corrected new instrumentation station; the analysis module 12 is used to perform secondary ion mass spectrometry (SIMS) analysis on the corrected new instrumentation station and the reference instrumentation station to obtain the SIMS results; the second determining module 13 is used to determine the matching result between the corrected new instrumentation station and the reference instrumentation station based on the SIMS results.

[0081] In one embodiment, the correction module 11 mainly includes: a dose correction submodule, used to perform dose correction on the initial new installation station based on the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first new installation station; a first thermal wave test submodule, used to perform thermal wave tests on the first new installation station and the reference station to obtain a first thermal wave map corresponding to the first new installation station and a second thermal wave map corresponding to the reference station; and a first thermal wave matching submodule, used to perform thermal wave matching on the first new installation station based on the first thermal wave map and the second thermal wave map to obtain a corrected new installation station.

[0082] In one embodiment, the dose correction submodule mainly includes: a measurement unit, used to measure the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first sheet resistance value corresponding to the initial new installation station and a second sheet resistance value corresponding to the reference station; a first calculation unit, used to calculate the dose correction amount of the initial new installation station based on the first sheet resistance value and the second sheet resistance value; and a correction unit, used to perform dose correction on the initial new installation station based on the dose correction amount to obtain the first new installation station.

[0083] In one embodiment, the first calculation unit mainly includes: a first determining subunit, used to determine multiple sets of correction points according to preset injection conditions and a first sheet resistance value, wherein the correction points include a preset injection dose and a corresponding first sheet resistance value; a fitting subunit, used to perform linear fitting on the multiple sets of correction points to obtain a correction curve; and a calculation subunit, used to calculate the dose correction amount of the initial new installation station according to the correction curve and the second sheet resistance value.

[0084] In one possible implementation, the correction unit mainly includes: a judgment subunit, used to judge whether the dose correction amount meets the first preset threshold and obtain a first judgment result; a second determination subunit, used to determine the initial new installation station as the first new installation station if the first judgment result is yes; and a correction subunit, used to perform dose correction on the initial new installation station according to the dose correction amount if the first judgment result is no, and obtain the first new installation station.

[0085] In one possible implementation, the first thermography matching submodule mainly includes: a second calculation unit for calculating the difference between the first thermograph and the second thermograph; a judgment unit for judging whether the difference meets a second preset threshold and obtaining a second judgment result; a determination unit for determining the first new installation station as a corrected new installation station if the second judgment result is yes; and a thermography matching unit for performing thermography matching on the first new installation station if the second judgment result is no, and re-correcting the dose of the first new installation station after thermography matching based on the sheet resistance values ​​of the first new installation station after thermography matching and the reference station, until the second judgment result is yes.

[0086] In one embodiment, the correction module 11 further includes: a second thermal wave testing submodule, used to perform thermal wave testing on the initial new installation station and the reference station to obtain a third thermal wave map corresponding to the initial new installation station and a fourth thermal wave map corresponding to the reference station; a judgment submodule, used to judge whether the difference value between the third thermal wave map and the fourth thermal wave map meets a third preset threshold, and obtain a third judgment result; and a second thermal wave matching submodule, used to perform thermal wave matching on the initial new installation station based on the third thermal wave map and the fourth thermal wave map if the third judgment result is negative.

[0087] In one possible implementation, the second determining module 13 is further used for SIMS result matching. If the SIMS result does not match, it is determined that the new modified installation station and the reference station are successfully matched. If the SIMS result does not match, it is determined that the new modified installation station and the reference station are unmatched.

[0088] According to embodiments of this disclosure, this disclosure also provides an electronic device and a readable storage medium.

[0089] Figure 7 A schematic block diagram of an example electronic device 700 that can be used to implement embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0090] like Figure 7 As shown, device 700 includes a computing unit 701, which can perform various appropriate actions and processes based on a computer program stored in read-only memory (ROM) 702 or a computer program loaded from storage unit 708 into random access memory (RAM) 703. RAM 703 may also store various programs and data required for the operation of device 700. The computing unit 701, ROM 702, and RAM 703 are interconnected via bus 704. Input / output (I / O) interface 705 is also connected to bus 704.

[0091] Multiple components in device 700 are connected to I / O interface 705, including: input unit 706, such as keyboard, mouse, etc.; output unit 707, such as various types of monitors, speakers, etc.; storage unit 708, such as disk, optical disk, etc.; and communication unit 709, such as network card, modem, wireless transceiver, etc. Communication unit 709 allows device 700 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0092] The computing unit 701 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 701 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 701 performs the various methods and processes described above, such as an ion implantation equipment matching method. For example, in some embodiments, an ion implantation equipment matching method may be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 708. In some embodiments, part or all of the computer program may be loaded and / or installed on device 700 via ROM 702 and / or communication unit 709. When the computer program is loaded into RAM 703 and executed by the computing unit 701, one or more steps of an ion implantation equipment matching method described above may be performed. Alternatively, in other embodiments, the computing unit 701 may be configured to perform an ion implantation machine matching method by any other suitable means (e.g., by means of firmware).

[0093] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0094] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0095] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0096] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0097] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0098] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.

[0099] It should be understood that the various forms of processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this disclosure can be achieved, and this is not limited herein.

[0100] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this disclosure, "a plurality of" means two or more, unless otherwise explicitly specified.

[0101] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. An ion implanter matching method, comprising: The method includes: Determine the preset injection conditions; Under the preset injection conditions, the dosage of the initial new machine is corrected according to the process parameters of the initial new machine and the reference machine to obtain the corrected new machine. The modified new instrument and the reference instrument were subjected to secondary ion mass spectrometry (SIMS) analysis to obtain the SIMS results; The matching result between the modified new installation station and the reference station is determined based on the SIMS results; Based on the process parameters of the initial new installation station and the reference installation station, the dosage of the initial new installation station is corrected to obtain a corrected new installation station, including: Thermal wave tests were performed on the initial new installation station and the reference station to obtain a third thermal wave map corresponding to the initial new installation station and a fourth thermal wave map corresponding to the reference station. Determine whether the difference between the third and fourth thermograms meets a third preset threshold, and obtain a third determination result; If the third judgment result is negative, then thermal wave matching is performed on the initial new installation station based on the third thermal wave map and the fourth thermal wave map; Based on the sheet resistance values ​​of the initial new installation station and the reference station, the initial new installation station after thermal wave matching is dose-corrected to obtain a first new installation station, and the sheet resistance values ​​of the first new installation station are matched with those of the reference station. Thermal wave tests were performed on the first new installation station and the reference station to obtain a first thermal wave map corresponding to the first new installation station and a second thermal wave map corresponding to the reference station. Calculate the difference between the first thermogram and the second thermogram; Determine whether the difference value meets the second preset threshold to obtain a second determination result; If the second determination result is yes, then the first newly installed machine is determined as the corrected newly installed machine; If the second judgment result is negative, then thermal matching is performed on the first new installation station, and the dose is corrected again on the first new installation station after thermal matching based on the sheet resistance values ​​of the first new installation station after thermal matching and the reference station, until the second judgment result is positive.

2. The method of claim 1, wherein, The step of performing dose correction on the initial new installation station after thermal wave matching based on the sheet resistance values ​​of the initial new installation station and the reference installation station to obtain the first new installation station includes: The sheet resistance values ​​of the initial new installation station and the reference station are measured to obtain the first sheet resistance value corresponding to the initial new installation station and the second sheet resistance value corresponding to the reference station. The dose correction amount for the initial new installation station is calculated based on the first block resistance value and the second block resistance value; Based on the dose correction amount, the initial new installation station is dose corrected to obtain the first new installation station.

3. The method of claim 2, wherein, The step of calculating the dose correction amount for the initial new installation station based on the first sheet resistance value and the second sheet resistance value includes: Based on the preset injection conditions and the first block resistance value, multiple sets of correction points are determined. The correction points include the preset injection dose and the corresponding first block resistance value. A correction curve is obtained by linearly fitting the multiple sets of correction points. The dose correction amount for the initial new installation station is calculated based on the correction curve and the second block resistance value.

4. The method of claim 2, wherein, The step of adjusting the dosage of the initial new installation station according to the dosage correction amount to obtain the first new installation station includes: Determine whether the dose correction amount meets the first preset threshold, and obtain the first determination result; If the first determination result is yes, then the initial new installation station is determined as the first new installation station; If the first determination result is negative, then the dose of the initial new installation unit is corrected according to the dose correction amount to obtain the first new installation unit.

5. The method according to any one of claims 1 to 4, characterized in that, The step of determining the matching result between the modified new installation station and the reference station based on the SIMS result includes: If the SIMS results match, it is determined that the modified new installation station and the reference station are successfully matched; If the SIMS results do not match, it is determined that the modified new installation station has failed to match the reference station.

6. An ion implanter matching device, comprising: The device includes: The first determining module is used to determine the preset injection conditions; The correction module is used to perform dose correction on the initial new machine station according to the process parameters of the initial new machine station and the reference machine station under the preset injection conditions, so as to obtain a corrected new machine station. The analysis module is used to perform secondary ion mass spectrometry (SIMS) analysis on the modified new instrument and the reference instrument to obtain SIMS results. The second determining module is used to determine the matching result between the modified new installation station and the reference station based on the SIMS result; The correction module is further configured to perform thermal wave testing on the initial new installation station and the reference station to obtain a third thermal wave map corresponding to the initial new installation station and a fourth thermal wave map corresponding to the reference station; determine whether the difference value between the third thermal wave map and the fourth thermal wave map meets a third preset threshold to obtain a third judgment result; if the third judgment result is negative, then perform thermal wave matching on the initial new installation station based on the third thermal wave map and the fourth thermal wave map; and perform dose correction on the thermally matched initial new installation station based on the sheet resistance values ​​of the initial new installation station and the reference station to obtain a first new installation station, wherein the sheet resistance values ​​of the first new installation station match those of the reference station. Thermal wave testing is performed on the first new installation station and the reference station to obtain a first thermal wave map corresponding to the first new installation station and a second thermal wave map corresponding to the reference station; the difference value between the first thermal wave map and the second thermal wave map is calculated; it is determined whether the difference value meets a second preset threshold to obtain a second judgment result; if the second judgment result is yes, the first new installation station is determined as the corrected new installation station; if the second judgment result is no, thermal wave matching is performed on the first new installation station, and the dose is corrected again on the first new installation station after thermal wave matching based on the sheet resistance values ​​of the first new installation station and the reference station after thermal wave matching, until the second judgment result is yes.

7. An electronic device, comprising: include: At least one processor; as well as A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-5.

8. A non-transitory computer-readable storage medium having stored thereon computer instructions, wherein, The computer instructions are used to cause the computer to perform the method according to any one of claims 1-5.

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