A high-frequency electronic switch packaging structure and a battery energy management system

Abstract

The present invention provides a high-frequency electronic switch packaging structure and a battery energy management system. The packaging structure includes at least one lower-layer power semiconductor module and at least one upper-layer control module. The lower-layer power semiconductor module includes at least one bidirectional conduction and bidirectional cutoff circuit. The upper-layer control module at least includes a switch group control terminal, and the switch group control terminal is connected to the power loop terminal of the bidirectional conduction and bidirectional cutoff circuit. The current conduction and cutoff of the bidirectional conduction and bidirectional cutoff circuit are controlled by the switch signal input through the switch group control terminal. In the present invention, multiple power semiconductor switch chips are packaged in an array form inside the module, and an absorption circuit for switch cutoff, a gate resistance for gate control, etc. are included. The integrated packaging form can effectively control problems such as current sharing, temperature imbalance, and asynchronous turn-on caused by assembly and external connection due to the use of discrete devices, and improve its use stability and safety.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and more particularly, to a high-frequency electronic switch packaging structure and a battery energy management system. Background Art

[0002] In recent years, renewable energy sources such as photovoltaic and wind power, as well as the power energy storage industry, have entered a stage of rapid development. However, the technological progress of energy forms such as energy storage and photovoltaic mainly reflects the progress in scale, volume, and production process. There are few new technologies that are refreshing and can be effectively industrialized.

[0003] Taking energy storage as an example, in an actual energy storage system, a battery system is composed of a large number of battery monomers / groups connected in series and parallel. Generally, large-diameter DC cables or current-carrying copper bars are used for mechanical connection between batteries. Although this traditional method is simple and easy to implement, it also brings disadvantages such as difficult compatibility of the installation structure, difficult measurement of the open-circuit voltage, and difficult operation of on-line maintenance. On the other hand, traditional battery management systems have high requirements for battery consistency. The short-board effect caused by differences between battery modules will result in energy loss of the battery system. The differences between battery modules of retired power batteries are greater than those of new batteries. The proposal of energy informatization technology brings a new way for the energy management of energy storage batteries. Through high-speed power electronics technology, the series-parallel topology of the battery system can be dynamically adjusted online according to system requirements, different states of each battery, and control strategies.

[0004] With the development of power semiconductor technology and the overall progress of the domestic semiconductor industry, the realization of energy informatization has become more diversified, low-cost, and highly reliable.

[0005] However, currently, conventional power semiconductor packages such as IGBT or MOSFET on the market usually only have single-tube packages, single-bridge-arm packages, full-bridge packages and other single-tube applications or rectification, inversion and other package forms, and usually cannot include associated circuits, with low integration. Extra engineering design and assembly are required for the power circuit part of the device, which affects the assembly cycle. Moreover, discrete devices are prone to problems such as current and temperature imbalance, difficult insulation treatment, and out-of-sync turn-on due to poor assembly and external connection.

[0006] In view of this, the present invention is specifically proposed. Summary of the Invention

[0007] The problem solved by the present invention is that in the prior art, the packaging structure of power semiconductors usually does not include associated circuits, and cannot achieve high-speed bidirectional conduction or bidirectional turn-off, with low integration. Extra engineering design and assembly are required for the power circuit part of the device, which affects the production and manufacturing cycle. Moreover, discrete devices are prone to problems such as current and temperature imbalance, difficult insulation treatment, and out-of-sync turn-on due to poor assembly and external connection.

[0008] To solve the above problems, the present invention discloses a high-frequency electronic switch packaging structure, which includes at least one lower-layer power semiconductor module and at least one upper-layer control module. The lower-layer power semiconductor module includes at least one bidirectional conduction and bidirectional turn-off circuit. The upper-layer control module includes at least a switch group control terminal, and the switch group control terminal is connected to the power circuit terminal of the bidirectional conduction and bidirectional turn-off circuit. The current conduction and turn-off of the bidirectional conduction and bidirectional turn-off circuit are controlled by the switch signal input through the switch group control terminal.

[0009] By integrally packaging the lower-layer power semiconductor module and the upper-layer control module, problems such as current sharing, temperature imbalance, and non-synchronous turn-on caused by assembly and external connection due to the use of discrete devices can be effectively controlled. The high-frequency electronic packaging structure produced accordingly includes all the power circuits and the functions of the control circuits of a high-frequency energy management device, thus forming a highly integrated and highly reliable semiconductor module for high-current energy management. Through the above settings, the switches of high-frequency electronics form a pre-packaged module structure. On the one hand, the number of components during the assembly of the battery energy management system is reduced, its assembly efficiency is greatly improved, and the construction cost is reduced. On the other hand, problems such as current sharing, temperature imbalance, and non-synchronous turn-on caused by poor assembly and external connection can be avoided, improving the use stability and safety of the battery energy management system. Moreover, during use, the heat generation of the upper-layer control module is much lower than that of the lower-layer power semiconductor module. After the two are packaged in layers, a specific heat dissipation structure can be set for the lower-layer power semiconductor module, thereby improving its heat dissipation efficiency, and the upper-layer control module can also be prevented from being affected by the heat generated during the operation of the lower-layer power semiconductor module, keeping it within the normal working temperature range, thus ensuring its normal operation and extending its service life.

[0010] Further, the bidirectional conduction and bidirectional turn-off circuit includes the power circuit terminals of M1, M2, and M3. A number of power semiconductor switch chips are arranged between the circuits formed by M1 and M2, and a number of power semiconductor switch chips are also arranged between the circuits formed by M1 and M3. The power semiconductor switch chips are arranged in an array. The switch group control terminal includes at least GATE1 and GATE2. The current conduction and turn-off of the M1-M2 or M2-M1 path are controlled by the switch signal input through GATE1, and the current conduction and turn-off of the M1-M3 or M3-M1 path are controlled by the switch signal input through GATE2.

[0011] Among them, the power semiconductor switch chips arranged in an array can use a single module to meet the rated current of two functional loops, namely the online M1-M2 and the offline M1-M3, of a high-frequency energy management device, without the need for product or engineering design in the parallel direction outside the module. Accordingly, the individual control of a single energy unit can be achieved, thereby forming a millisecond-level dynamic switch control network, which is conducive to the online dynamic adjustment of different states and control strategies of each battery in the battery system.

[0012] Further, a first RC circuit is provided between the loops formed by M1 and M2, and the first RC circuit is arranged in parallel with a switch array formed by several power semiconductor switch chips in the loop formed by M1 and M2; a second RC circuit is provided between the loops formed by M1 and M3, and the second RC circuit is arranged in parallel with a switch array formed by several power semiconductor switch chips in the loop formed by M1 and M3.

[0013] The first RC circuit and the second RC circuit are used for voltage equalization of the system and spike absorption and buffering during the two-way turn-off of the two loops, so as to ensure the safety of each component in the loop during frequent opening and closing processes, thereby extending the service life of the packaging structure.

[0014] Further, a gate control resistor is provided at the front end of each power semiconductor switch chip.

[0015] The gate control resistor can prevent the overshoot of the control signal of the power semiconductor switch chip, optimize the turn-off time of the switch, improve the turn-on and turn-off performance of the loop, and thus achieve the millisecond-level response of the dynamic switch reliable control network. When applied to the dynamic battery energy management system, it can instantaneously turn on or off the connection of the battery. Therefore, in the case of a fault in one battery in the battery pack, its connection to the main circuit can be disconnected in the shortest time, avoiding damage to the entire circuit caused by the faulty battery and greatly improving the safety of the main circuit.

[0016] Further, the upper control module further includes a power supply circuit, an isolation layer, an operation module, a sampling module, a semiconductor drive module, and a feedback module.

[0017] The above modules are all commonly used control modules in the prior art, and their specific structures, connection relationships, and functions will not be described in detail here.

[0018] Further, the lower-layer power semiconductor module is welded on a copper-clad ceramic substrate, and the copper-clad ceramic substrate is welded on a copper substrate.

[0019] The copper-clad ceramic liner has a high thermal conductivity coefficient while also having a low coefficient of expansion, which can ensure the interconnection, conduction, insulation, and support between devices, and can also ensure the signal transmission speed in the circuit. At the same time, it can avoid large deformations when heated, thus ensuring the service stability of the packaging structure. The copper substrate has excellent thermal conductivity, and using it as the substrate can improve the heat dissipation efficiency and ensure that the operating temperature of the packaging structure is within a controllable range, which helps to extend its service life.

[0020] Furthermore, the copper substrate is disposed on a heat dissipation device.

[0021] The heat dissipation device can be a radiator or other structures with heat dissipation functions. This setting can reasonably utilize the thermal conductivity of the copper substrate, improve the heat dissipation efficiency of the lower-layer power semiconductor module, ensure that it is within a reasonable operating temperature range, and timely export the heat generated by the power semiconductor switch chip under high-frequency switching conditions to avoid affecting the normal operation of the high-frequency electronic switch packaging structure and extend its service life.

[0022] Furthermore, the packaging structure is packaged in a flat packaging form.

[0023] The packaging process of the flat packaging form is mature. Packaging the above-mentioned packaging structure in a modular housing is conducive to the large-scale production of products. The products produced by the flat packaging form have high heat dissipation efficiency and are easy to install, which is conducive to timely discharging the heat generated when the power semiconductor switch chip array works, and can significantly improve the product installation efficiency and heat dissipation efficiency.

[0024] Furthermore, the power circuit terminal uses a bolt connection method externally, and the control terminal of the switch group is led out in the form of pins.

[0025] Adopting bolt connection for the power circuit terminal can facilitate the setting of wires and the connection with devices such as power supplies. The control terminal of the switch group is usually used for the transmission of digital signals, and adopting the pin form is more in line with the currently commonly used connection form.

[0026] The present invention also discloses a battery energy management system, which includes the high-frequency electronic switch packaging structure as described above.

[0027] The advantages of the battery energy management system compared with the prior art are the same as those of the above-mentioned high-frequency electronic switch packaging structure, and will not be elaborated here.

[0028] Compared with the prior art, a high-frequency electronic switch packaging structure and a battery energy management system according to the present invention have the following advantages: The packaging structure provided by the present invention adopts a form of multiple power semiconductor device switch chip arrays packaged inside the module, and includes an absorption circuit for switch turn-off, a gate resistor for gate control, etc. The integrated packaging form can effectively control problems such as current sharing, temperature imbalance, and asynchronous turn-on caused by the use of discrete devices due to assembly and external connection. This packaging structure includes the overall functions of the power part and has the characteristics of high integration, and can achieve efficient, high-frequency, and high-current energy management without the need for additional engineering design and assembly work on the power circuit part of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. is a schematic structural diagram of the lower-layer power semiconductor part of the packaging structure according to an embodiment of the present invention;

[0030] Figure 2 FIG. is a schematic structural diagram of the upper-layer control part of the packaging structure according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0031] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the described embodiments are some but not all of the embodiments of the present invention. The specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0032] The following specifically describes a high-frequency electronic switch packaging structure and a battery energy management system according to an embodiment of the present invention with reference to the drawings.

[0033] Embodiment 1

[0034] This embodiment provides a high-frequency electronic switch packaging structure, including at least one lower-layer power semiconductor module and at least one upper-layer control module. The lower-layer power semiconductor module includes at least one bidirectional conduction and bidirectional turn-off circuit. The upper-layer control module includes at least a switch group control terminal, and the switch group control terminal is connected to the power circuit terminal of the bidirectional conduction and bidirectional turn-off circuit. The current conduction and turn-off of the bidirectional conduction and bidirectional turn-off circuit are controlled by the switch signal input through the switch group control terminal. In this embodiment, through the integrated packaging of the lower-layer power semiconductor module and the upper-layer control module, problems such as uneven current sharing, temperature imbalance, and asynchronous turn-on caused by assembly and external connection due to the use of discrete devices can be effectively controlled. The high-frequency electronic packaging structure produced accordingly includes all the power circuits and the functions of the control circuits of a high-frequency energy management device, thereby forming a highly integrated and highly reliable semiconductor module for high-current energy management. Through the above settings, the switches of high-frequency electronics form a pre-packaged module structure. On the one hand, the number of components during the assembly of the battery energy management system is reduced, its assembly efficiency is greatly improved, and the construction cost is reduced. On the other hand, problems such as uneven current sharing, temperature imbalance, and asynchronous turn-on caused by poor assembly and external connection can be avoided, and the use stability and safety of the battery energy management system are improved. In addition, during use, the heat generation of the upper-layer control module is much lower than that of the lower-layer power semiconductor module. After the two are packaged in layers, a specific heat dissipation structure can be set for the lower-layer power semiconductor module, thereby improving its heat dissipation efficiency, and the upper-layer control module can also be prevented from being affected by the heat generated during the operation of the lower-layer power semiconductor module, so that it is within the normal working temperature range, thereby ensuring its normal operation and extending its service life.

[0035] In one of the embodiments, the bidirectional conduction and bidirectional turn-off circuit includes the power circuit terminals of M1, M2, and M3. A plurality of power semiconductor switch chips are arranged between the circuits formed by M1 and M2, and a plurality of power semiconductor switch chips are also arranged between the circuits formed by M1 and M3. The power semiconductor switch chips are arranged in an array. The switch group control terminal includes at least GATE1 and GATE2. The current conduction and turn-off of the M1-M2 or M2-M1 path are controlled by the switch signal input through GATE1, and the current conduction and turn-off of the M1-M3 or M3-M1 path are controlled by the switch signal input through GATE2. Through the power semiconductor switch chips arranged in an array, a single module can be used to meet the rated current of the online M1-M2 and offline M1-M3 two functional circuits of a high-frequency energy management device, without the need for product or engineering design in the parallel direction outside the module. Accordingly, the individual control of a single energy unit can be realized, thereby forming a millisecond-level dynamic switch control network, which is beneficial to the online dynamic adjustment of different states and control strategies of each battery in the battery system. As Figure 1As shown, between the loops formed by M1 and M2, each of Q1, Q11... Qn, Qn1 is a power semiconductor switch chip, arranged in a series-parallel array. Between the loops formed by M1 and M3, each of Q1', Q11'... Qn', Qn1' is also a power semiconductor switch chip, arranged in a series-parallel array. During the operation of the circuit, Q1, Q11... Qn, Qn1 act simultaneously to make the loop of M1 and M2 conductive or non-conductive, and Q1', Q11'... Qn', Qn1' act simultaneously to make the loop of M1 and M3 non-conductive or conductive. In some optional embodiments, the loop formed by M1 and M2 and the loop formed by M1 and M3 are interlocked, that is, when the M1-M2 or M2-M1 loop is conductive, the M1-M3 or M3-M1 loop is automatically disconnected, and when the M1-M3 or M3-M1 loop is conductive, the M1-M2 or M2-M1 loop is automatically disconnected. In one optional embodiment, in the loop formed by M1 and M2, after Q1-Qn are connected in parallel, they are connected in series with the parallel switch array formed by Q11-Qn1, thereby forming an array of power semiconductor switch chips in the loop of M1 and M2.

[0036] As one of the embodiments, a first RC loop is provided between the loops formed by M1 and M2, and the first RC loop is connected in parallel with the switch array formed by several power semiconductor switch chips in the loop formed by M1 and M2; a second RC loop is provided between the loops formed by M1 and M3, and the second RC loop is connected in parallel with the switch array formed by several power semiconductor switch chips in the loop formed by M1 and M3. It should be understood that at the moment when the circuit is disconnected, a back electromotive force with a completely opposite power supply phase and a higher voltage will be fed back to the circuit, and this back electromotive force is likely to cause a short-circuit phenomenon between the contacts of the circuit and is likely to damage the devices in the circuit. The first RC loop and the second RC loop can consume the back electromotive force, thereby reducing its impact on the circuit and devices. In this embodiment, the first RC loop and the second RC loop are used for voltage equalization of the system and spike absorption and buffering during the bi-directional turn-off of the two loops, so as to ensure the safety of each component in the loop during frequent opening and closing processes, thereby extending the service life of the packaging structure.

[0037] In this embodiment, a gate control resistor is provided at the front end of each power semiconductor switch chip. The gate control resistor can prevent overshoot of the control signal of the power semiconductor switch chip, optimize the turn-off time of the switch, improve the turn-on and turn-off performance of the loop, and thus achieve a millisecond-level response of the dynamic switch reliable control network. When applied to the dynamic battery energy management system, it can instantaneously turn on or off the connection of the battery. Therefore, in the case of a fault in one battery in the battery pack, its connection to the main circuit can be disconnected in the shortest time, avoiding damage to the entire circuit caused by the faulty battery and greatly improving the safety of the main circuit.

[0038] As an embodiment of the present invention, a diode is also provided in the bidirectional conduction and bidirectional turn-off circuit in parallel with each power semiconductor switch chip. The diode is a freewheeling diode, which can avoid damaging the device when the circuit conducts reversely, thus ensuring the service life of the high-frequency electronic switch packaging structure.

[0039] Specifically, as Figure 2 shown, the upper control module further includes a power supply circuit, an isolation layer, an operation module, a sampling module, a semiconductor drive module, and a feedback module. The above modules are all commonly used control modules in the prior art. For specific reference, please refer to the prior art, and the specific structure, connection relationship, and function will not be elaborated here.

[0040] Specifically, the lower-layer power semiconductor module is welded on a copper-clad ceramic substrate, and the copper-clad ceramic substrate is welded on a copper substrate. The copper-clad ceramic substrate has a high thermal conductivity coefficient and a low expansion coefficient, which can ensure the interconnection, conduction, insulation, and support between devices, ensure the signal transmission speed in the circuit, and avoid large deformation when heated, thus ensuring the use stability of the packaging structure. The copper substrate has excellent thermal conductivity, and using it as the substrate can improve the heat dissipation efficiency, ensure that the working temperature of the packaging structure is within a controllable range, and help extend its service life.

[0041] Preferably, the copper substrate is arranged on a heat dissipation device. The heat dissipation device can be a radiator or other structures with heat dissipation functions. This setting can reasonably utilize the thermal conductivity of the copper substrate, improve the heat dissipation efficiency of the lower-layer power semiconductor module, ensure that it is within a reasonable working temperature range, timely export the heat generated by the power semiconductor switch chip under high-frequency switching conditions, avoid affecting the normal operation of the high-frequency electronic switch packaging structure, and extend its service life.

[0042] In this embodiment, the encapsulation structure is encapsulated in a flat package form. The encapsulation process of the flat package form is mature. Encapsulating the above encapsulation structure in a modular housing is conducive to the large-scale production of products. The products produced by the flat package form have high heat dissipation efficiency and are easy to install, which is conducive to timely discharging the heat generated during the operation of the power semiconductor switch chip array, and can significantly improve the product installation efficiency and heat dissipation efficiency.

[0043] Specifically, during the encapsulation process of the upper control module, it is fixed by injecting glue into the encapsulation part. This is because the heat dissipation requirement of the upper control module is very small. Using glue injection encapsulation can obtain good encapsulation effect, and the heat generated during its operation can be conducted by the glue injection layer to the housing for natural heat dissipation, without affecting the normal application of the upper control module.

[0044] In some of the embodiments, the power circuit terminal is externally connected by bolts, and the switch group control terminal is led out in the form of pins. Using bolt connection for the power circuit terminal can facilitate the setting of wires and is convenient for connection with devices such as power supplies. The switch group control terminal is usually used for the transmission of digital signals, and the pin form is more in line with the currently commonly used connection form.

[0045] Embodiment 2

[0046] This embodiment provides a battery energy management system, and the battery energy management system includes the high-frequency electronic switch encapsulation structure as described in Embodiment 1.

[0047] Specifically, in the battery energy management system, the medium and high-frequency electronic switch forms a switch module through the encapsulation structure described in Embodiment 1, which can significantly reduce the number of parts during the installation of the battery energy management system, and at the same time improve the operation stability and safety of the battery energy management system.

[0048] The advantages of the battery energy management system compared with the prior art are the same as those of the above high-frequency electronic switch encapsulation structure, and will not be elaborated here.

[0049] Generally, the battery energy management system is a secondary system formed by the application of the high-frequency electronic switch encapsulation structure. These secondary systems include but are not limited to various retired power battery energy storage systems, various photovoltaic systems, various electrochemical battery energy storage systems, and various photovoltaic-storage hybrid systems, which can meet the control requirements of energy units in each system.

[0050] Although the present invention is disclosed as above, the present invention is not limited thereto. In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A high-frequency electronic switch packaging structure, characterized in that, It includes at least one lower-layer power semiconductor module and at least one upper-layer control module. The lower-layer power semiconductor module includes at least one bidirectional conduction and bidirectional turn-off circuit. The upper-layer control module includes at least a switch group control terminal, and the switch group control terminal is connected to the power loop terminal of the bidirectional conduction and bidirectional turn-off circuit. The on and off of the current in the bidirectional conduction and bidirectional turn-off circuit are controlled by the switch signal input through the switch group control terminal. The bidirectional conduction and bidirectional turn-off circuit includes the power loop terminals of M1, M2, and M3. A number of power semiconductor switch chips are arranged between the loops formed by M1 and M2, and a number of power semiconductor switch chips are also arranged between the loops formed by M1 and M3. The power semiconductor switch chips are arranged in an array. The switch group control terminal includes at least GATE1 and GATE2. The on and off of the current in the M1-M2 or M2-M1 path are controlled by the switch signal input through GATE1, and the on and off of the current in the M1-M3 or M3-M1 path are controlled by the switch signal input through GATE2. A gate control resistor is arranged at the front end of each power semiconductor switch chip to form a millisecond-level dynamic switch control network. The packaging structure is packaged in a flat package form. A first RC circuit is arranged between the loops formed by M1 and M2, and the first RC circuit is arranged in parallel with the switch array formed by a number of power semiconductor switch chips in the loop formed by M1 and M2. A second RC circuit is arranged between the loops formed by M1 and M3, and the second RC circuit is arranged in parallel with the switch array formed by a number of power semiconductor switch chips in the loop formed by M1 and M3.

2. The high-frequency electronic switch packaging structure according to claim 1, characterized in that, The upper-layer control module further includes a power supply circuit, an isolation layer, an operation module, a sampling module, a semiconductor drive module, and a feedback module.

3. The high-frequency electronic switch packaging structure according to claim 1, wherein The lower-layer power semiconductor module is welded on a copper-clad ceramic substrate, and the copper-clad ceramic substrate is welded on a copper substrate.

4. The high-frequency electronic switch packaging structure according to claim 3, wherein, The copper substrate is arranged on a heat dissipation device.

5. The high-frequency electronic switch packaging structure according to claim 1, characterized in that The power loop terminal is externally connected by a bolt connection method, and the switch group control terminal is led out in the form of pins.

6. A battery energy management system, characterized in that, The battery energy management system includes the high-frequency electronic switch packaging structure according to any one of claims 1-5.

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