Method for manufacturing an evaporation mask

Abstract

The present invention provides a production method for producing an evaporation mask with high evaporation efficiency in a simple manner. The production method for producing an evaporation mask includes a step of forming a first plating layer using a resist pattern as a mask; a step of deforming the resist pattern; and a step of forming a second plating layer on the first plating layer using the deformed resist pattern as a mask. By deforming the resist pattern, the deformed resist pattern can be overlapped with a part of the first plating layer.

Description

Technical Field

[0001] One embodiment of the present invention relates to a method for manufacturing a vapor deposition mask. Background Technology

[0002] Typically, in the manufacturing process of organic EL display devices, vacuum evaporation is used to form the layer composed of organic EL material (organic EL layer). In vacuum evaporation, an evaporation mask is brought close to the substrate to be processed, and the organic EL material is deposited onto the substrate through the evaporation mask. The evaporation mask has multiple openings. Because the organic EL material reaches the substrate through multiple openings, the organic EL layer can be selectively formed at positions corresponding to the multiple openings.

[0003] The vapor deposition material, originating from the vapor deposition source, arrives at the vapor deposition mask from various angles. Therefore, when the material travels at an angle towards the mask, it may be unable to pass through the opening, resulting in reduced vapor deposition efficiency. To address this, a vapor deposition mask has been developed in the prior art that shapes the diameter of its opening into a shape that extends towards the vapor deposition source (e.g., a conical shape), thus suppressing the aforementioned phenomenon (e.g., Patent Documents 1 and 2).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent document 1: Japanese Patent Application Publication No. 2009-087840.

[0007] Patent Document 2: Japanese Patent Application Publication No. 2016-074938. Summary of the Invention

[0008] The technical problem that the invention aims to solve

[0009] One of the problems of one embodiment of the present invention is to provide a method for manufacturing vapor deposition masks with excellent vapor deposition efficiency using a simple method.

[0010] Technical means for solving problems

[0011] A method for manufacturing a vapor deposition mask according to one embodiment of the present invention includes: a step of forming a first coating layer using a resist pattern as a mask; a step of deforming the resist pattern; and a step of forming a second coating layer on the first coating layer using the deformed resist pattern as a mask.

[0012] A method for manufacturing a vapor deposition mask according to one embodiment of the present invention includes: forming a second resist layer on a first resist layer; etching the second resist layer to form a second resist pattern; using the second resist pattern as a mask, etching the first resist layer to form a first resist pattern; and using the first resist pattern and the second resist pattern as masks to form a coating, wherein the first resist pattern is etched such that, in cross-section, the width of the first resist pattern is narrower than the width of the second resist pattern. Attached Figure Description

[0013] Figure 1 This is a plan view showing the structure of the vapor deposition mask according to the first embodiment of the present invention.

[0014] Figure 2 This is a cross-sectional view showing the structure of the vapor deposition mask according to the first embodiment of the present invention.

[0015] Figure 3 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0016] Figure 4 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0017] Figure 5 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0018] Figure 6 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0019] Figure 7 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0020] Figure 8 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0021] Figure 9 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0022] Figure 10 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0023] Figure 11 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0024] Figure 12This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to the first embodiment of the present invention.

[0025] Figure 13 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the first embodiment of the present invention.

[0026] Figure 14 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the first embodiment of the present invention.

[0027] Figure 15 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 2 of the first embodiment of the present invention.

[0028] Figure 16 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 2 of the first embodiment of the present invention.

[0029] Figure 17 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0030] Figure 18 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0031] Figure 19 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0032] Figure 20 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0033] Figure 21 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0034] Figure 22 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

[0035] Figure 23 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the second embodiment of the present invention.

[0036] Figure 24 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the second embodiment of the present invention.

[0037] Figure 25 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the second embodiment of the present invention.

[0038] Figure 26This is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to a modified example 1 of the second embodiment of the present invention.

[0039] Explanation of reference numerals in the attached figures

[0040] 21… Inclined surface, 100… Evaporation mask, 110… Mask portion, 111, 111a, 111b… Opening portion, 112, 112a, 112b… Non-opening portion, 115… Panel area, 120… Holding frame, 130… Connecting portion, 200… Substrate, 210… Seed layer, 216… Resist layer, 220, 225, 225a, 225b… Resist pattern, 230, 230a, 230b… Plating layer, 240… Resist pattern, 261, 262… Resist layer, 261a, 262a… Resist pattern. Detailed Implementation

[0041] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention can be implemented in various ways without departing from its spirit, and is not limited to the description of the embodiments illustrated below. In the drawings, for the purpose of making the explanation clearer, the width, thickness, shape, etc. of each part are schematically shown compared with the actual embodiment; however, this is only an example and does not limit the scope of the explanation of the present invention. In this specification and the drawings, elements that have the same function as those described with reference to the accompanying drawings are sometimes labeled with the same reference numerals and repeated descriptions are omitted.

[0042] Within the scope of this specification and the claims, the manner in which other structures are arranged on top of a certain structure, when simply referred to as "on top of," includes, unless otherwise stated, two situations: one where other structures are arranged directly above a certain structure in contact with it, and the other where other structures are arranged above a certain structure with another structure in between.

[0043] In this specification, expressions such as "α includes A, B, or C", "α includes any one of A, B, and C", and "α includes one selected from A, B, and C" do not exclude the possibility that α includes multiple combinations of A to C, unless otherwise stated. Furthermore, these expressions do not exclude the possibility that α includes other elements.

[0044] <First Implementation Method>

[0045] [Structure of vapor deposition mask]

[0046] Figure 1 This is a plan view showing the structure of the vapor deposition mask 100 according to the first embodiment of the present invention. Figure 2This is a cross-sectional view showing the structure of the vapor deposition mask 100 according to the first embodiment of the present invention. Specifically, Figure 2 The cross-sectional diagram shown represents along Figure 1 The cross-section of line segment A-A'. For example... Figure 1 and Figure 2 As shown, the vapor deposition mask 100 includes: a thin-film mask portion 110 formed by electroforming; a holding frame 120 for holding the mask portion 110; and a connecting portion 130 connecting the mask portion 110 and the holding frame 120. Furthermore, electroforming refers to a technique of forming a metal layer whose shape is faithful to the shape of the mold (the resist pattern in this embodiment) by electroplating.

[0047] The mask portion 110 has multiple panel regions 115. During the deposition of organic EL material, a substrate (not shown) is arranged such that the display area of ​​the organic EL display device overlaps with each panel region 115. In each panel region 115, multiple openings 111 are provided, matching the pixel pitch of the organic EL display device. The area of ​​the mask portion 110 other than the openings 111 is referred to as a non-opening portion 112. The non-opening portion 112 is the area surrounding each opening 111. In each panel region 115, the non-opening portion 112 corresponds to the portion that shields the deposited material.

[0048] During vapor deposition, the vapor deposition mask 100 is aligned with the substrate to be vapor-deposited in such a way that the vapor deposition area (the area where the thin film should be formed) of the substrate to be vapor-deposited overlaps with the opening 111, and the non-vapor deposition area of ​​the substrate to be vapor-deposited overlaps with the non-opening 112. Vapor formed by the sublimation of the vapor deposition material reaches the substrate to be vapor-deposited through the opening 111, thereby depositing the vapor deposition material in the vapor deposition area to form a thin film.

[0049] The retaining frame 120, when viewed from above, is disposed around the outer periphery of the mask portion 110 in such a way that it surrounds a plurality of panel regions 115 of the mask portion 110. That is, the retaining frame 120 functions as a component for retaining the thin-film-shaped mask portion 110. Furthermore, in Figure 1 In this example, the retaining frame 120 is only provided on the outer periphery of the mask portion 110. However, it is not limited to this example; the retaining frame 120 can also be configured as a grid.

[0050] The connecting portion 130 is a component that connects the mask portion 110 and the holding frame 120. In the vapor deposition mask 100 of this embodiment, the mask portion 110 and the holding frame 120 are connected via the connecting portion 130. That is, as shown... Figure 2 As shown, the mask portion 110 is not directly connected to the retaining frame 120.

[0051] In the above structure, the mask portion 110 is composed of a thin film-like coating. In this embodiment, the mask portion 110 is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm or more and 20 μm or less (preferably 5 μm or more and 10 μm or less). In this embodiment, the thickness of the mask portion 110 is 5 μm. The retaining frame 120 is, for example, an alloy such as Invar. Invar alloy has a low coefficient of thermal expansion at room temperature, thus having the advantage of not easily applying stress to the mask portion 110. The thickness d2 of the retaining frame 120 is, for example, 0.5 mm or more and 3.0 mm or less (preferably 0.8 mm or more and 2.0 mm or less). In this embodiment, the thickness of the retaining frame 120 is 1 mm.

[0052] In this embodiment, Invar alloy is used as the metal material constituting the mask portion 110, the holding frame 120, and the connecting portion 130. Compared with nickel and the like, Invar alloy has a smaller coefficient of thermal expansion at both room temperature and the temperature during the organic EL element formation process, and is close to the coefficient of thermal expansion of glass. Therefore, by using Invar alloy as the constituent material of the evaporation mask 100, the effects caused by thermal expansion between the mask portion 110 and the glass substrate can be suppressed during the manufacturing process of the evaporation mask 100, which will be described later. In addition, during evaporation, the misalignment between the evaporation mask and the substrate to be evaporated (usually a glass substrate) caused by thermal expansion is reduced, which has the advantage of improved evaporation positioning accuracy. However, this is not limited to this example; any material with a coefficient of thermal expansion close to that of glass can be used, other than Invar alloy. In addition, the holding frame 120 may also be made of a different metal material than the mask portion 110 and the connecting portion 130.

[0053] [Manufacturing method of vapor deposition mask 100]

[0054] The manufacturing method of the vapor deposition mask 100 of this embodiment will be described in detail with reference to the accompanying drawings. Figures 3 to 12 This is a diagram illustrating a method for manufacturing a vapor deposition mask 100 according to the first embodiment of the present invention.

[0055] First, such as Figure 3 As shown, a seed layer 210 and a resist pattern 220 are formed on the substrate 200. In this embodiment, a glass substrate is used as the substrate 200. However, it is not limited to this example; a metal substrate or a ceramic substrate may also be used as the substrate 200.

[0056] The seed layer 210 is a metal layer provided for the growth of the plating layer. In this embodiment, a nickel alloy (specifically, an Invar alloy) is used as the material for the plating layer 230a, which will be described later. Therefore, a metal layer containing copper (Cu) is used as the seed layer 210. However, this is not a limitation; any other metal layer that can function as a seed layer may be used.

[0057] The seed layer 210 can be formed using sputtering or CVD (Chemical Vapor Deposition). The thickness of the seed layer 210 only needs to ensure the conductivity necessary for the growth of the coating 230 described later. For example, the thickness of the seed layer 210 can be formed in the range of 50 nm or more and 500 nm or less.

[0058] The resist pattern 220 is formed by coating a photosensitive resin material onto a seed layer 210, followed by exposure and development (etching) processes. The area where the resist pattern 220 is formed is... Figure 1 and Figure 2 The mask portion 110 shown has a region corresponding to a plurality of openings 111.

[0059] Next, as Figure 4 As shown, a coating 230a is formed in the area where the resist pattern 220 is not configured. That is, the area where the coating 230a is formed is the same as... Figure 1 and Figure 2 The area of ​​the mask portion 110 shown corresponds to the area where the non-opening portion 112 is provided. In this embodiment, before the formation of the plating layer 230a, the surface of the seed layer 210 is pretreated using a release agent. As a release agent, for example, Nippon Kagaku Sangyo Co., Ltd.'s "Nicaka Nontack" (registered trademark, trade name) can be used.

[0060] In this embodiment, plating layer 230a is a metal layer made of nickel alloy (specifically, Invar alloy). In this embodiment, electroplating is performed by energizing a seed layer 210 in an aqueous solution containing nickel alloy metal ions. When the seed layer 210 is energized, plating layer 230a is formed on the surface of the seed layer 210. The thickness of plating layer 230a can be adjusted by controlling the electroplating time. In this embodiment, the thickness of plating layer 230a is adjusted to be in the range of 0.5 μm or more and 5 μm or less. Specifically, in this embodiment, the thickness of plating layer 230a is formed to be 2 μm. This embodiment illustrates an example of forming plating layer 230a using Invar alloy, but it is not limited to this example; other metal materials can be used as long as they are suitable for electroplating.

[0061] After the coating 230a is formed, the resist pattern 220 is deformed to form the resist pattern 225. Specifically, as... Figure 5 As shown, the cross-sectional shape of the resist pattern 220 is changed so that a portion of the resist pattern 220 overlaps a portion of the coating 230a. Therefore, with Figure 4 Compared to the distance between adjacent resist patterns 220 shown, Figure 5 The distance between adjacent resist patterns 225 shown is shortened. Furthermore, in this embodiment, an example is shown where the upper portion of the resist pattern 225 (located above the coating 230a) is deformed into a conical shape. However, the shape of the upper portion of the resist pattern 225 is not limited to this example, but varies depending on the processing conditions during the deformation of the resist pattern 220 and the material constituting the resist pattern 220.

[0062] As a method for deforming the resist pattern 220, for example, the resist pattern 220 can be expanded by heating it (e.g., heating it to 200 degrees Celsius), or by contacting the resist pattern 220 with a specific solution (e.g., an organic base solution such as a developer) or a gas (e.g., a reactive gas such as an organosilane) to cause it to swell. When forming the resist pattern 225, a suitable resist material can be used depending on whether it is expanded by heating or swelled by contact with a solution, etc.

[0063] The above description mainly illustrates an example of an action that increases the volume of the resist pattern 220. The deformation of the resist pattern 220 required in this invention refers to a shape in which a portion of the resist pattern 220, protruding upwards from the coating 230a, covers the coating 230a. For example, this can be achieved by deforming the cross-sectional shape without increasing the cross-sectional area of ​​the resist pattern 220 itself, or by deforming the shape without changing the volume of the resist pattern 220. Therefore, the deformation of the cross-sectional shape of the resist pattern 220 is not necessarily limited to methods relying solely on expansion or swelling.

[0064] Next, as Figure 6As shown, the deformed resist pattern 225 is used as a mask for electroplating, and a plating layer 230b is formed in the areas where the resist pattern 225 is not disposed. The plating layer 230b is formed between multiple resist patterns 225. In this embodiment, plating layers 230a and 230b are formed using the same nickel alloy (specifically, Invar alloy), but this is not limited to this example; different metal layers may also be used. In this embodiment, the thickness of plating layer 230b is adjusted to be in the range of 2 μm or more and 15 μm or less. Specifically, in this embodiment, the thickness of plating layer 230b is set to 3 μm. In this embodiment, an example of forming plating layer 230b using Invar alloy is shown, but this is not limited to this example; other metal materials may be used as long as they are materials that can be used in electroplating.

[0065] like Figure 6 As shown, the spacing between the first plating layers 230a (i.e., the spacing between adjacent first plating layers 230a) at the location sandwiching the deformed resist pattern 225 is smaller than the spacing between the second plating layers 230b (i.e., the spacing between adjacent second plating layers 230b) at the location sandwiching the deformed resist pattern 225. In other words, the width of the portion of the deformed resist pattern 225 sandwiched by the first plating layers 230a is smaller than the width of the portion sandwiched by the second plating layers 230b.

[0066] After the 230b coating is formed, as Figure 7 The resist pattern 225 is shown to be removed. By removing the resist pattern 225, a pattern consisting of plating layers 230a and 230b is formed. The pattern consisting of plating layers 230a and 230b is similar to... Figure 1 and Figure 2 This corresponds to the non-opening portion 112 shown (i.e., the shielding portion that shields the vapor-deposited material). The area formed by removing the resist pattern 225 is... Figure 1 and Figure 2 The opening 111 shown corresponds to this. That is, in this embodiment, the total film thickness of the coating 230a and the coating 230b determines the film thickness of the mask portion 110.

[0067] like Figure 7 As shown in the cross-section, the width of the upper surface of coating 230b is narrower than the width of the upper surface of coating 230a. Here, let the difference between the width of the upper surface of coating 230a and the width of the upper surface of coating 230b be X. Therefore, the diameter of the upper end of opening 111 is wider than the diameter of the lower end of opening 111, reducing the phenomenon where vapor deposition material advancing obliquely towards the vapor deposition mask cannot pass through the opening. The length of the aforementioned difference X can be [specified]. Figure 5 The amount of deformation of the resist pattern 220 shown is controlled.

[0068] Next, as Figure 8As shown, a retaining frame 120 is disposed on a portion of the non-opening portion 112 (the portion not used as a mask portion 110). The retaining frame 120 is bonded to the non-opening portion 112 by the adhesive force of an adhesive layer (not shown). The retaining frame 120 is as follows... Figure 1 As shown, it is arranged to surround the mask portion 110.

[0069] Next, as Figure 9 As shown, a resist pattern 240 is formed on the mask portion 110 and the holding frame 120. The resist pattern 240 is formed by applying a photosensitive resin material to the mask portion 110 and the holding frame 120, followed by exposure and development (etching) processes. The area where the resist pattern 240 is formed is provided with... Figure 1 and Figure 2 The area outside the area of ​​the connecting part 130 shown.

[0070] Next, as Figure 10 As shown, a connecting portion 130 is formed in an area where the resist pattern 240 is not disposed. The connecting portion 130 is formed by electroplating. Specifically, the connecting portion 130 is selectively formed in areas where the resist pattern 240 is not disposed, using the retaining frame 120, the non-opening portion 112, and the seed layer 210 as seed layers. Therefore, as Figure 10 As shown, a connecting portion 130 is formed across the mask portion 110 from the side wall of the retaining frame 120.

[0071] In this embodiment, the connecting portion 130 is continuously formed from the side wall of the retaining frame 120 to the mask portion 110. This allows the retaining frame 120 and the mask portion 110 to be connected via the connecting portion 130. An opening provided in the mask portion 110 that overlaps with the connecting portion 130 serves to physically separate the mask portion 110 from the retaining frame 120 and to improve the tightness of the connection between the mask portion 110 and the connecting portion 130.

[0072] In this embodiment, the connecting portion 130 is formed of a plating layer (metal layer) using a nickel alloy (specifically, Invar alloy) as the material. In this embodiment, the thickness of the connecting portion 130 is adjusted to a range of 50 nm or more and 200 nm or less. In this embodiment, an example of forming the connecting portion 130 with Invar alloy is shown, but it is not limited to this example; other metal materials can be used as long as they are materials that can be used in electroplating.

[0073] After the connecting part 130 is formed, as Figure 11After the resist pattern 240 is removed, the substrate 200 is removed. Specifically, after the holding frame 120 is fixed by adsorption or the like, the substrate 200 is mechanically peeled off from the mask portion 110, the holding frame 120, and the connecting portion 130, thereby removing the substrate 200. At this time, the seed layer 210 and a portion of the mask portion 110 (the non-opening portion 112 overlapping the holding frame 120) are removed together with the substrate 200.

[0074] Through the above manufacturing process, a product with... Figure 12 The vapor deposition mask 100 with the cross-sectional structure shown is as follows. Figure 12 As shown, the vapor deposition mask 100 of this embodiment has a structure in which a thin-film mask portion 110 is connected to a holding frame 120 via a connecting portion 130. In this case, the width of the opening 111 in cross-section (the distance between the coating layers 230b) is wider at the upper end than at the lower end (the distance between the coating layers 230a). Therefore, the phenomenon that vapor deposition material advancing obliquely towards the vapor deposition mask 100 cannot pass through the opening 111 can be reduced. Furthermore, in this embodiment, without pattern formation, simply deforming the resist pattern used during electroplating can enlarge the diameter of the opening 111 of the vapor deposition mask 100 on the vapor deposition source side. Thus, according to this embodiment, a vapor deposition mask 100 with excellent vapor deposition efficiency can be achieved in a simple way.

[0075] (Variation Example 1)

[0076] In this modified example, the resist pattern 220 is modified to be similar to... Figure 5 Examples of different shapes are provided for illustration. Figure 13 and Figure 14 This is a cross-sectional view showing a method for manufacturing a vapor deposition mask 100 according to a modified example 1 of the first embodiment of the present invention.

[0077] Obtained following the same procedure as the first embodiment Figure 4 The state shown is as follows: Figure 13 As shown, a resist pattern 225a is formed that deforms the resist pattern 220. In this modified example, an example is shown where the upper part of the resist pattern 225a (the portion above the plating layer 230a) is approximately circular. Figure 5 The difference is that the resist pattern 225a does not contact the upper surface of the plating layer 230a; when viewed from above, the resist pattern 225a overlaps with the plating layer 230a. The shape of the upper part of the resist pattern 225a can be achieved by appropriately adjusting the processing conditions when deforming the resist pattern 220 and the material constituting the resist pattern 220.

[0078] After forming the resist pattern 225a, a plating layer 230b is formed again by electroplating. After plating layer 230b is formed, the resist pattern 225a is removed. Thus, as... Figure 14 The diagram shows an opening 111a and a non-opening 112a.

[0079] exist Figure 14 The diagram shows an enlarged view of the end of the non-opening portion 112a (the area enclosed by the frame 10). As shown in this enlarged view, the side of the coating 230b is curved to form a recess. Furthermore, it is clear from the inclination of the straight line 11 connecting the edge of the upper surface and the edge of the lower surface of the coating 230b that the width (diameter) increases upwards (towards the vapor deposition source during vapor deposition). Therefore, in this modified example, the phenomenon that vapor deposition material advancing obliquely toward the vapor deposition mask 100 cannot pass through the opening 111a can be reduced.

[0080] Furthermore, as shown by frame 12 in the enlarged view above, in this modified example, the edge of the lower surface of the plating layer 230b is approximately aligned with the edge of the upper surface of the plating layer 230a. That is, in this modified example, when the resist pattern 220 is deformed, the resist pattern 220 extends laterally without contacting the surface of the plating layer 230a.

[0081] (Variation Example 2)

[0082] In this modified example, the resist pattern 220 is modified to be similar to... Figure 5 and Figure 13 Examples of different shapes are provided for illustration. Figure 15 and Figure 16 This is a cross-sectional view showing the manufacturing method of the vapor deposition mask 100 in Modified Example 2 of the first embodiment of the present invention.

[0083] Obtained following the same procedure as the first embodiment Figure 4 After the state shown, as Figure 15 As shown, a resist pattern 225b is formed that deforms the resist pattern 220. In this modified example, an example is shown where the upper part of the resist pattern 225b (the portion above the coating 230a) is approximately elliptical. The cross-sectional shape is the same as described above. Figure 13 They are the same in nature. Figure 15 The difference in the example shown is that a portion of the resist pattern 225a is in contact with the upper surface of the coating 230a. The shape of the upper part of the resist pattern 225b can be achieved by appropriately adjusting the processing conditions when deforming the resist pattern 220 and the material constituting the resist pattern 220.

[0084] After forming the resist pattern 225b, electroplating is used to form a plating layer 230b. After plating layer 230b is formed, the resist pattern 225a is removed. Thus, as... Figure 16 The diagram shows an opening 111b and a non-opening 112b.

[0085] Figure 16 The image shows an enlarged view of the end of the non-opening portion 112b (the area enclosed by the frame line 15). As shown in this enlarged view, the side of the coating 230b is curved in a way that forms a recess. Furthermore, it is clear from the inclination of the straight line 16 connecting the edge of the upper surface and the edge of the lower surface of the coating 230b that the width (diameter) increases upwards (towards the vapor deposition source during vapor deposition). Therefore, in this modified example, the phenomenon that vapor deposition material advancing obliquely towards the vapor deposition mask 100 cannot pass through the opening 111b can be reduced.

[0086] Furthermore, as shown by frame 17 in the enlarged view above, in this modified example, unlike Modified Example 1 described above, there is a distance between the edge of the lower surface of plating 230b and the edge of the upper surface of plating 230a. That is, in Figure 16 In the example shown, a portion of the upper surface of the coating 230a is exposed. In this modified example, when the resist pattern 220 deforms and expands laterally, the portion of the resist pattern 220 protruding above the coating 230a contacts the surface of the coating 230a, thus forming the exposed surface as described above.

[0087] <Second Implementation Method>

[0088] In this embodiment, an example of manufacturing the vapor deposition mask 100 using a method different from that of the first embodiment will be described. Furthermore, in the manufacturing method of the vapor deposition mask 100 of this embodiment, the same reference numerals are used for elements identical to those in the first embodiment, and detailed descriptions are omitted.

[0089] The manufacturing method of the vapor deposition mask 100 of this embodiment will be described in detail with reference to the accompanying drawings. Figures 17-26 This is a diagram illustrating a method for manufacturing a vapor deposition mask 100 according to the first embodiment of the present invention.

[0090] First, such as Figure 17 As shown, a seed layer 210, a resist layer 261, and a resist layer 262 are formed on a substrate 200. In this embodiment, a non-photosensitive resin material is used as the resist layer 261, and a photosensitive resin material is used as the resist layer 262. However, this is not limited to this example; a photosensitive resin material may also be used as the resist layer 216. In this embodiment, a material with a higher etching rate relative to the developer is used as the resist layer 261 compared to the resist layer 262.

[0091] like Figure 17 As shown, the thickness of the resist layer 261 is smaller than the thickness of the resist layer 262. The thickness of the resist layer 262 is preferably at least twice the thickness of the resist layer 261 (ideally at least three times and less than five times). As described later, the shape of the opening 111 constituting the mask portion 110 can be set by the ratio of the thicknesses of the resist layer 261 and the resist layer 262.

[0092] After the resist layer 261 and resist layer 262 are formed, as Figure 18 As shown, a resist pattern 262a is formed by exposure and development (etching) of the resist layer 262. The area where the resist pattern 262a is formed is adjacent to the area using... Figure 1 and Figure 2 The mask portion 110 described corresponds to the area where multiple openings 111 are provided.

[0093] After the resist pattern 262a is formed, as follows Figure 19 As shown, using the resist pattern 262a as a mask, the resist layer 261 is developed (etched), thereby forming the resist pattern 261a. The area where the resist pattern 261a is formed is the same as that used for... Figure 1 and Figure 2 The mask portion 110 described corresponds to the area where multiple openings 111 are provided.

[0094] like Figure 19 As shown, the resist pattern 261a is etched such that, in cross-section, the width of the resist pattern 261a is narrower than the width of the resist pattern 262a. In this embodiment, as described above, a material with a higher etching rate relative to the developer is used as the resist layer 261 compared to the resist layer 262. Therefore, by over-etching to retract the side of the resist pattern 261a, the resist pattern 262a can be formed in a suspended state relative to the resist pattern 261a. At this time, the amount of retraction of the resist pattern 261a can be controlled by the etching process time.

[0095] Next, as Figure 20 As shown, a plating layer 230 is formed in the areas where resist patterns 261a and 262a are not configured. That is, the areas where plating layer 230 is formed are the same as those in the first embodiment utilizing... Figure 1 and Figure 2 The area of ​​the mask portion 110 described corresponds to the area where the opening portion 112 is provided. In this embodiment, the plating layer 230 is a metal layer made of Invar alloy.

[0096] In this embodiment, the coating 230 is grown at least to the position where its upper surface is located between the resist patterns 262a. That is, the film thickness of the coating 230 is at least greater than the film thickness of the resist patterns 261a. In this embodiment, the thickness of the coating 230 is adjusted to a range of 3 μm or more and 20 μm or less. Specifically, in this embodiment, the thickness of the coating 230 is set to 5 μm.

[0097] After coating 230 is formed, such as Figure 21 As shown, resist patterns 261a and 262a are removed. By removing resist patterns 261a and 262a, a pattern formed by plating layer 230 is formed. The pattern formed by plating layer 230 is similar to... Figure 1 and Figure 2 This corresponds to the non-opening portion 112 shown (i.e., the shielding portion that shields the vapor-deposited material). The area formed by removing the resist pattern 261a and the resist pattern 262a is related to the area formed by utilizing... Figure 1 and Figure 2 The opening 111 described corresponds to this. That is, in this embodiment, the film thickness of the coating 230 determines the film thickness of the mask portion 110.

[0098] like Figure 21 As shown in the cross-section, the width of the upper surface of the non-opening portion 112 is narrower than the width of the lower surface of the non-opening portion 112. Here, the difference between the width of the upper surface and the width of the lower surface of the non-opening portion 112 is defined as X. Therefore, the diameter of the upper end of the opening portion 111 is wider than the diameter of the lower end of the opening portion 111, which reduces the phenomenon that vapor deposition material advancing obliquely towards the vapor deposition mask cannot pass through the opening. The length of the aforementioned difference X can be... Figure 19 The amount of receding of the resist pattern 261a shown is used to control this.

[0099] As described above, after forming the opening 111 and non-opening 112 constituting the mask portion 110, it is subjected to the same process as the first embodiment. Figures 8-11 The same process, completed Figure 22 The vapor deposition mask 100 is shown. Figure 22 As shown, the vapor deposition mask 100 of this embodiment has a structure in which a thin-film mask portion 110 is connected to a holding frame 120 via a connecting portion 130. In this case, when viewed from above, the width of the opening 111 (the distance between the lower surfaces of the non-opening portions 112) is wider at the upper end than at the lower end. Therefore, the phenomenon that vapor deposition material advancing obliquely towards the vapor deposition mask 100 cannot pass through the opening 111 can be reduced. Thus, according to this embodiment, a vapor deposition mask 100 with excellent vapor deposition efficiency can be achieved.

[0100] (Variation Example 1)

[0101] In this modified example, regarding the formation of the resist pattern 262a as... Figure 18 Examples of different shapes are provided for illustration. Figures 23-26 This is a cross-sectional view showing the manufacturing method of the vapor deposition mask 100 of Modified Example 1 of the second embodiment of the present invention.

[0102] The same as the second embodiment is obtained. Figure 17 After the state shown, as Figure 23 As shown, an inverted cone-shaped resist pattern 262a is formed by exposing and developing (etching) the resist layer 262. That is, in this modified example, the width of the resist pattern 262a when viewed from above increases as it moves upward (away from the resist layer 261).

[0103] In this embodiment, a photosensitive resin material is used as the photoresist layer 262 constituting the photoresist pattern 262a. Photosensitive resin materials have the advantage of easily forming an inverted cone shape by adjusting exposure conditions, etc. However, this is not limited to this example; the photoresist pattern 262a can also be a regular cone shape. When the photoresist layer 262 is formed using a photosensitive resin material, the cone shape can be controlled by adjusting exposure conditions, etc., so both inverted and regular cone shapes can be controlled. Furthermore, the area where the photoresist pattern 262a is formed, and the area utilizing… Figure 1 and Figure 2 The mask portion 110 described corresponds to the area where multiple openings 111 are provided.

[0104] After the resist pattern 262a is formed, as follows Figure 24 As shown, the resist pattern 262a is used as a mask to develop (etch) the resist layer 261, thereby forming the resist pattern 261a. In this modified example, the resist pattern 261a is etched such that the width of the resist pattern 261a is narrower than the width of the resist pattern 262a when viewed from above.

[0105] Next, as Figure 25 As shown, a coating 230 is formed in the areas where resist patterns 261a and 262a are not configured. After the coating 230 is formed, as... Figure 26 As shown, resist patterns 261a and 262a are removed. By removing resist patterns 261a and 262a, a pattern consisting of plating layer 230 is formed.

[0106] The pattern formed by the plating layer 230, and Figure 1 and Figure 2 This corresponds to the non-opening portion 112 shown (i.e., the shielding portion that shields the vapor-deposited material). The area formed by removing the resist pattern 261a and the resist pattern 262a is related to the area formed by utilizing... Figure 1 and Figure 2 The opening 111 described corresponds to this.

[0107] like Figure 26 As shown, when viewed from above, the non-opening portion 112 has a conical shape. That is, as shown in the enlarged view corresponding to the portion surrounded by the frame line 20, an inclined surface 21 is formed in the upper part of the non-opening portion 112, such that the film thickness increases with distance from the opening portion 111 and the non-opening portion 112. Therefore, with Figure 21 Compared to the diameter of the upper end of the opening 111 shown, the diameter of the upper end of the opening 111 in this modified example can be enlarged. This reduces the phenomenon where vapor deposition material advancing obliquely towards the vapor deposition mask cannot pass through the opening.

[0108] As embodiments of the present invention, the above-described embodiments can be appropriately combined and implemented as long as they do not contradict each other. Based on the manufacturing method of the vapor deposition mask of each embodiment, those skilled in the art may appropriately add, delete, or modify the constituent elements, or add, omit, or modify the process steps, as long as they possess the spirit of the present invention, and such modifications are also included within the scope of the present invention.

[0109] Furthermore, any effects that differ from those achieved through the various embodiments described above, such as effects that are obvious according to this specification or effects that are easily conceived by those skilled in the art, should of course be understood as effects obtained through the present invention.

Claims

1. A method for manufacturing a vapor deposition mask, characterized in that, include: The step of forming the first coating by using the resist pattern as a mask; A step after the step of forming the first coating layer, to deform the resist pattern used in the step of forming the first coating layer; and The step of using the deformed resist pattern as a mask to form a second coating layer on top of the first coating layer.

2. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: By deforming the resist pattern, the deformed resist pattern overlaps with a portion of the first coating.

3. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: The step of deforming the resist pattern includes immersing the resist pattern in an organic alkaline solvent.

4. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: The step of deforming the resist pattern includes heating the resist pattern.

5. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: The spacing of the first coating layer formed at the location where the deformed resist pattern is sandwiched is smaller than the spacing of the second coating layer formed at the location where the deformed resist pattern is sandwiched.

6. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: It also includes the step of forming the resist pattern on the metal layer. The first coating and the second coating are formed by electroplating.

7. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: It also includes the step of removing the deformed resist pattern after the second coating is formed.

Images