Seed chuck, control method of seed chuck, and crystal growth furnace

Abstract

The application discloses a seed crystal clamp, a control method of the seed crystal clamp and a crystal growth furnace. The minimum length of the seed crystal required in a single crystal growth process is L1. The seed crystal clamp comprises a shell and a first driving assembly. A containing cavity is defined in the shell. The containing cavity comprises a first containing cavity. The first containing cavity is used for placing a growth position seed crystal. A through opening is formed in the bottom of the first containing cavity, so that the lower end of the growth position seed crystal located in the first containing cavity is adapted to extend out through the through opening. The height of the first containing cavity is L2, and L2 is greater than or equal to 2*L1. The first driving assembly is arranged on the shell and is used for driving the growth position seed crystal located in the first containing cavity to move downwards. According to the seed crystal clamp, the replacement time of the seed crystal can be shortened, the seed crystal does not need to be frequently replaced, and therefore the replacement efficiency of the seed crystal is improved.

Description

Technical Field

[0001] This invention relates to the field of crystal growth, and in particular to a seed crystal chuck, a method for controlling the seed crystal chuck, and a crystal growth furnace. Background Technology

[0002] In related technologies, the crystal rod pulling process specifically involves first immersing the seed crystal in molten silicon, and then going through steps such as welding, crystal pulling, shoulder formation, shoulder rotation, equal diameter forming, and finishing to complete the pulling of a crystal rod.

[0003] After the crystal rod is pulled, a new seed crystal needs to be replaced to replace the initial seed crystal. During the seed crystal replacement process, the seed crystal chuck and the initial seed crystal need to be taken out of the crystal growth furnace together, and then the initial seed crystal needs to be removed from the seed crystal chuck. Then, the new seed crystal is installed on the seed crystal chuck, and finally the seed crystal chuck with the new seed crystal is placed into the crystal growth furnace. This process is quite cumbersome and time-consuming, and the seed crystal removal process is quite laborious, which affects the seed crystal replacement efficiency. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a seed crystal chuck, which can shorten the seed crystal replacement time and improve the seed crystal replacement efficiency.

[0005] The present invention also proposes a control method for a seed crystal chuck, wherein the control method uses the aforementioned seed crystal chuck for control.

[0006] The present invention also proposes a crystal growth furnace having the above-mentioned seed crystal chuck.

[0007] According to a first aspect embodiment of the present invention, the minimum length of the seed crystal required for a single crystal growth process is L1. The seed crystal chuck includes: a shell, the shell defining a holding cavity, the holding cavity including a first holding cavity for placing the growth site seed crystal, the bottom of the first holding cavity having an opening to allow the lower end of the growth site seed crystal located in the first holding cavity to extend through the opening, the height of the first holding cavity being L2, L2≥2*L1; and a first driving assembly disposed in the shell and used to drive the growth site seed crystal located in the first holding cavity to move downward.

[0008] According to an embodiment of the present invention, the seed crystal chuck drives the seed crystal located in the first holding cavity to move downward through the first driving component, so that the growth position seed crystal extends beyond the length required for a single crystal growth process, and the minimum length of the seed crystal required for a single crystal growth process is L1, the height of the holding cavity is L2, L2≥2*L1, so that the holding cavity can accommodate a growth position seed crystal of sufficient length, increasing the number of times the growth position seed crystal can be used, thereby avoiding the need to frequently replace the new growth position seed crystal for crystal growth, so that the seed crystal chuck can perform multiple crystal growths in a single replacement of the growth position seed crystal, thereby shortening the replacement time of the growth position seed crystal and improving the replacement efficiency of the growth position seed crystal.

[0009] In some embodiments, the seed crystal chuck further includes: a clamping assembly disposed in the holding cavity and defining the first holding cavity within the clamping assembly, wherein a first limiting portion is formed on the inner wall of the clamping assembly, the first limiting portion being adapted to cooperate with each of a plurality of second limiting portions disposed axially spaced on the outer peripheral wall of the growth seed crystal to limit the movement of the growth seed crystal in the vertical direction.

[0010] In some embodiments, the clamping assembly includes a plurality of clamps arranged sequentially along the circumferential direction, and the first limiting portion includes a plurality of limiting sub-parts arranged sequentially along the circumferential direction. The inner wall of each clamp is formed with the limiting sub-part, and the position of each clamp in the radial direction is adjustable so that the clamping assembly has a clamping state and a releasing state. In the clamping state, each clamp is adapted to abut against the growth seed crystal, and in the releasing state, each clamp is adapted to separate from the growth seed crystal.

[0011] In some embodiments, the limiting sub-part is formed as a latching protrusion, and the clamping state has a first clamping state and a second clamping state. In the first clamping state, the limiting sub-part of each of the clamps is adapted to cooperate with the corresponding second limiting part. In the second clamping state, the limiting sub-part of each of the clamps is adapted to cooperate with other positions on the outer peripheral wall of the growth seed crystal other than the second limiting part. In the first clamping state, the radial distance between the clamp and the central axis of the outer shell is less than the radial distance between the clamp and the central axis of the outer shell in the second clamping state.

[0012] In some embodiments, the seed crystal chuck further includes a detection component disposed on the housing and located outside the holding cavity. The detection component includes an image acquisition device and a moving component. The image acquisition device is mounted on the moving component and is used to acquire an image of the outer peripheral wall of the portion of the growth seed crystal extending outside the first holding cavity. The image acquisition device includes at least one image acquisition element. The position of the moving component in the axial direction is adjustable, such that the detection component has a first state and a second state. In the first state, the detection component is located on the upper side of the lower end face of the housing. In the second state, the image acquisition device is located on the lower side of the lower end face of the housing.

[0013] In some embodiments, in the second state, the moving member is pivotally engaged with the housing in a circumferential manner; or, the image acquisition device is pivotally engaged with the moving member in a circumferential manner.

[0014] In some embodiments, the image acquisition device is pivotally coupled with the moving device. In the first state, the acquisition lens of the image acquisition device is positioned downwards, and in the second state, the acquisition lens of the image acquisition device is positioned towards the central axis of the first holding cavity.

[0015] In some embodiments, the holding cavity further includes at least one second holding cavity for placing a spare seed crystal, and the seed crystal chuck further includes a second driving component for driving the spare seed crystal located in the second holding cavity to the first holding cavity, so that the spare seed crystal is transformed into the growth seed crystal.

[0016] In some embodiments, the seed crystal chuck further includes: a clamping assembly disposed in the holding cavity, the first holding cavity being located inside the clamping assembly and the second holding cavity being located outside the clamping assembly, the clamping assembly including a plurality of sleeves arranged sequentially along the circumference; a plurality of third driving assemblies, each of the third driving assemblies being used to drive the corresponding sleeve to move radially, so that the clamping assembly has a clamping state and a releasing state, in the clamping state, each sleeve is adapted to abut against the growth site seed crystal, and in the releasing state, two adjacent sleeves are spaced apart to define an avoidance channel, the avoidance channel connecting the first holding cavity and the second holding cavity, so that the spare site seed crystal is adapted to move to the first holding cavity through the avoidance channel.

[0017] In some embodiments, there are multiple second holding cavities and multiple second driving components, and the multiple second holding cavities and multiple jackets are staggered in the circumferential direction, and the multiple second driving components and multiple third driving components are staggered in the circumferential direction.

[0018] In some embodiments, the second driving component is configured to drive the spare seed crystal to move radially, and the second driving component includes: a driving mechanism; a clamping member connected to the driving mechanism to be driven to move by the driving mechanism, the clamping member including a first clamping arm and a second clamping arm, the first clamping arm and the second clamping arm being pivotally engaged to adjust the size of the clamping opening of the clamping member.

[0019] In some embodiments, the spare seed crystal is provided with a plurality of seed crystal chucks, which further include: a plurality of first slide rails, each of which corresponds to a plurality of clamps, wherein the clamps and the third drive assembly are disposed on the first slide rails, and the third drive assembly is adapted to drive the clamps to move along the extension direction of the first slide rails; a plurality of second slide rails, which are staggered with the plurality of first slide rails along the circumferential direction of the first holding cavity, and each of the plurality of second slide rails corresponds to a plurality of spare seed crystals, wherein the second drive assembly and the spare seed crystals are disposed on the second slide rails, and each of the second slide rails has a groove on its upper side, the groove extending along the radial direction of the second slide rail, the clamping member being disposed in the groove, and the axial thickness of the groove being the same as the axial thickness of the clamping member, wherein in the vertical direction, the top surface of the clamping member is flush with the bottom surface of the third drive assembly, or the top surface of the clamping member is lower than the bottom surface of the third drive assembly.

[0020] According to a second aspect of the present invention, the seed crystal chuck is the same as the seed crystal chuck described in the first aspect of the present invention. The growth seed crystal has multiple long crystal segments arranged sequentially along its length direction. The multiple long crystal segments include a first long crystal segment and a second long crystal segment. The first long crystal segment is connected to the lower side of the second long crystal segment. The control method includes the following steps: S1, the first long crystal segment extends through the through-hole, and after a single crystal growth, it is determined whether the first long crystal segment meets the first crystal growth condition; S2, if it does not meet the condition, the first long crystal segment is cut off, and the first driving component drives the growth seed crystal to move downward so that the second long crystal segment extends through the through-hole, thereby transforming the second long crystal segment into the first long crystal segment.

[0021] According to the seed crystal chuck control method of the present invention, by setting the seed crystal at the growth position to have multiple long crystal segments, when the first long crystal segment does not meet the requirements for the next crystal growth, the first driving component pushes out the second long crystal segment through the port for use in the next crystal growth, so that the seed crystal at the growth position can complete multiple crystal growths, reduce the seed crystal replacement time, and improve the production efficiency of the crystal rod.

[0022] In some embodiments, the first crystal growth condition is: A1 / A0 < a first preset value, where A0 is the surface area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth, and A1 is the oxidation area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth.

[0023] In some embodiments, the control method further includes: S3, after a single crystal growth, determining whether the first crystal growth segment meets the second crystal growth condition, wherein the second crystal growth condition is: L≥L1, where L is the current length of the first crystal growth segment; S4, if not, the first driving component drives the growth seed crystal to move downward so that the second crystal growth segment extends through the through-hole.

[0024] In some embodiments, step S1 includes: S11, acquiring an image of the peripheral sidewall of the first crystal growth segment before a single crystal growth; S12, acquiring another image of the peripheral sidewall of the first crystal growth segment after a single crystal growth; S13, calculating A0 and A1 based on the image acquired in step S12 to determine whether the first crystal growth condition is met; S14, comparing the image acquired in step S12 with the image acquired in step S11, obtaining an image ratio using the known actual axial dimension of the first crystal growth segment before crystal growth and the image size, and calculating L based on the image ratio and the image size of the first crystal growth segment after crystal growth, for use in step S3 to determine whether the first crystal growth segment meets the second crystal growth condition.

[0025] In some embodiments, the control method further includes: S5, repeating steps S1, S2, S3 and S4 until the last segment of the growth seed crystal does not meet the first growth condition or the second growth condition, and the growth seed crystal is moved out of the first holding cavity from the port; S6, the second driving component drives the spare seed crystal to move to the first holding cavity so that the spare seed crystal becomes the growth seed crystal, and repeating steps S1, S2, S3 and S4.

[0026] A crystal growth furnace according to a third aspect of the present invention includes a seed crystal chuck according to a first aspect of the present invention.

[0027] According to an embodiment of the present invention, the production efficiency of the crystal growth furnace is improved by employing the above-described seed crystal chuck.

[0028] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0029] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0030] Figure 1 This is a cross-sectional view of a seed crystal chuck according to an embodiment of the present invention, wherein the clamping component is in a first clamping state and the detection component is in a first state;

[0031] Figure 2 This is a schematic diagram of a seed crystal chuck according to an embodiment of the present invention, wherein the detection component is in a first state;

[0032] Figure 3 yes Figure 2 The cross-sectional view of the seed crystal chuck shown shows the clamping component in a first clamping state and the detection component in a first state.

[0033] Figure 4 yes Figure 2 Another schematic diagram of the seed crystal chuck shown shows the detection component in the second state;

[0034] Figure 5 yes Figure 4 The cross-sectional view of the seed crystal chuck shown shows the clamping component in the first clamping state and the detection component in the second state.

[0035] Figure 6 yes Figure 2 The top view of the seed crystal chuck shown (without the outer shell);

[0036] Figure 7 yes Figure 6 The diagram shows the clamping assembly of the seed crystal chuck in the released state;

[0037] Figure 8 yes Figure 7 The sectional view along line AA shown in the figure;

[0038] Figure 9 yes Figure 7 A schematic diagram showing the spare seed crystal of the seed crystal chuck moving to the first holding cavity;

[0039] Figure 10 yes Figure 9 The diagram shown illustrates the transformation of a spare seed crystal into a growth seed crystal using a seed crystal chuck.

[0040] Figure 11 yes Figure 10 The cross-sectional view along line BB shown;

[0041] Figure 12 This is a method for controlling a seed crystal chuck according to an embodiment of the present invention;

[0042] Figure 13 This is a method for controlling a seed crystal chuck according to another embodiment of the present invention.

[0043] Figure label:

[0044] Seed crystal chuck 100, upper shell 10, motion cavity 10a

[0045] Outer shell 1, first holding cavity 1a, second holding cavity 1b, through port 1c, annular rack 11

[0046] First drive assembly 2, lead screw 21, push block 22, first drive component 23

[0047] Clamping assembly 3, clearance channel 30, first limiting part 3a, clamp 31, limiting sub-part 31a,

[0048] Second limiting part 4a, growth seed crystal 41, spare seed crystal 42

[0049] Detection component 5, image acquisition device 51, image acquisition element 511, moving element 52,

[0050] Second drive assembly 6, drive mechanism 61, clamping member 62, first clamping arm 621, second clamping arm 622, second drive assembly 63

[0051] Third drive component 7, first slide rail 8, second slide rail 9, slide groove 9a. Detailed Implementation

[0052] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0053] The following disclosure provides numerous different embodiments or examples for implementing various structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples. Such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. Additionally, examples of various specific processes and materials are provided in this invention; however, those skilled in the art will recognize the applicability of other processes and / or the use of other materials.

[0054] Hereinafter, with reference to the accompanying drawings, a seed chuck 100 according to an embodiment of the present invention will be described.

[0055] like Figure 1 and Figure 2As shown, the seed crystal chuck 100 includes a housing 1, within which a holding cavity is defined. The holding cavity includes a first holding cavity 1a, which is used to place the growth seed crystal 41. A through-hole 1c is formed at the bottom of the first holding cavity 1a so that the lower end of the growth seed crystal 41 located in the first holding cavity 1a can extend through the through-hole 1c. The lower end face of the growth seed crystal 41 is immersed in molten silicon by the seed crystal chuck 100 to pull the crystal rod, so that the part of the growth seed crystal 41 extending out of the first holding cavity 1a through the through-hole 1c can be used for crystal growth.

[0056] The height of the first holding cavity 1a is L2, L2≥2*L1, where L1 is the minimum length of the seed crystal required for a single crystal growth process. This allows the first holding cavity 1a to accommodate a growth position seed crystal 41 that is greater than or equal to twice the minimum length of the seed crystal required for a single crystal growth process. This allows the length of the growth position seed crystal 41 to be appropriately increased to be comparable to the height of the first holding cavity 1a, ensuring that the growth position seed crystal 41 can meet the requirements for at least two crystal growth processes. For example, the seed crystal chuck 100 can hold the growth position seed crystal 41 for continuous multiple crystal growth processes.

[0057] For example, when L2 = 2 * L1, if the length of the seed crystal 41 at the growth position is equivalent to the height of the first holding cavity 1a, then the seed crystal 41 at the growth position can be used for two-stage crystal growth, three-stage crystal growth, or more than three-stage crystal growth; as another example, when L2 = 3 * L1, if the length of the seed crystal 41 at the growth position is equivalent to the height of the first holding cavity 1a, then the seed crystal 41 at the growth position can be used for three-stage crystal growth, or more than three-stage crystal growth; as yet another example, when L2 = 4.5 * L1, if the length of the seed crystal 41 at the growth position is equivalent to the height of the first holding cavity 1a, then the seed crystal 41 at the growth position can be used for four-stage crystal growth, five-stage crystal growth, or more than five-stage crystal growth; L2 can be any multiple of L1 greater than or equal to 2.

[0058] The seed crystal chuck 100 also includes a first driving component 2, which is disposed on the outer shell 1. The first driving component 2 is used to drive the growth seed crystal 41 located in the first holding cavity 1a to move downward, so as to increase the length of the growth seed crystal 41 extending through the through port 1c. At the same time, a part of the growth seed crystal 41 originally located in the first holding cavity 1a will extend through the through port 1c, that is, the unused part of the growth seed crystal 41 extends through the through port 1c, so as to effectively ensure that the growth seed crystal 41 can meet the requirements of multiple crystal growth.

[0059] For example, after a single crystal rod is grown, if the consumption of the portion of the seed crystal 41 extending through the port 1c is small, and the aforementioned portion of the seed crystal 41 still meets the crystal growth requirements for the next / next stage, then the seed crystal 41 can be used directly to pull the next crystal rod without adjustment; however, if the portion of the seed crystal 41 extending through the port 1c cannot meet the pulling requirements for the next crystal rod, the seed crystal 41 can be driven downward by the first driving component 2 until the portion of the seed crystal 41 extending through the port 1c can meet the requirements for the next crystal growth.

[0060] For example, the conditions for determining that the seed crystal meets the crystal growth requirements include that the length of the seed crystal reaches L1. If, after the growth of a single crystal rod, the length of the portion of the seed crystal 41 extending through the port 1c is greater than or equal to L1, then the seed crystal 41 can be used for the next crystal growth without adjustment. If the length of the portion of the seed crystal 41 extending through the port 1c is less than L1, then the first driving component 2 drives the seed crystal 41 to move downward until the length of the portion of the seed crystal 41 extending through the port 1c reaches or exceeds L1.

[0061] Of course, the conditions for determining whether a seed crystal meets the requirements for crystal growth are not limited to this.

[0062] For example, the conditions for determining that the seed crystal meets the crystal growth requirements include the seed crystal length reaching L1 and the oxidation area ratio of the seed crystal surface not exceeding a first preset value. Therefore, after growing a single crystal rod, if the oxidation area ratio of the portion of the seed crystal 41 extending through the port 1c exceeds the first preset value, this portion of the seed crystal cannot be used further and can be directly cut off. The first driving component 2 drives the seed crystal 41 at the growth position to move downwards until the length of the portion of the seed crystal 41 extending through the port 1c reaches L1 or exceeds L1; if the oxidation area ratio of the portion of the seed crystal 41 extending through the port 1c exceeds the first preset value, then this portion of the seed crystal cannot be used further and can be directly cut off. If the surface oxide area of ​​the portion of the seed crystal extending through the port 1c does not exceed the first preset value, then this portion of the seed crystal can continue to be used. In this case, if the length of the portion of the seed crystal 41 extending through the port 1c is greater than or equal to L1, then the seed crystal 41 can be used for the next crystal growth without adjustment. Conversely, if the length of the portion of the seed crystal 41 extending through the port 1c is less than L1, then the first driving component 2 drives the seed crystal 41 to move downwards until the length of the portion of the seed crystal 41 extending through the port 1c reaches or exceeds L1. Of course, if the surface oxide area of ​​the portion of the seed crystal 41 extending through the port 1c does not exceed the first preset value, this portion can also be directly removed.

[0063] As can be seen, in this application, the seed crystal chuck 100, in conjunction with a growth position seed crystal 41 of appropriate length, can effectively increase the number of times the growth position seed crystal 41 can be used. This allows the seed crystal chuck 100 to perform multiple crystal growths after a single replacement of the growth position seed crystal 41, thereby extending the replacement cycle of the growth position seed crystal 41, shortening the replacement time of the growth position seed crystal 41, and improving the replacement efficiency of the growth position seed crystal 41. This avoids the need to frequently replace the new growth position seed crystal 41, thereby improving the crystal rod production efficiency of the crystal growth furnace.

[0064] According to an embodiment of the present invention, the seed crystal chuck 100 drives the seed crystal 4 located in the first holding cavity 1a to move downward through the first driving component 2, so that the growth position seed crystal 41 extends beyond the length required for a single crystal growth process, and the minimum length of the seed crystal 4 required for a single crystal growth process is L1, the height of the holding cavity is L2, L2≥2*L1, so that the holding cavity can accommodate a growth position seed crystal 41 of sufficient length, increasing the number of times the growth position seed crystal 41 can be used, thereby avoiding the need to frequently replace the new growth position seed crystal 41 for crystal growth, so that the seed crystal chuck 100 can perform multiple crystal growths in a single replacement of the growth position seed crystal 41, thereby shortening the replacement time of the growth position seed crystal 41 and improving the replacement efficiency of the growth position seed crystal 41.

[0065] In this embodiment, the axial direction can be understood as the axial direction of the seed crystal chuck 100 or the axial direction of the outer shell 1, that is... Figure 1 In the context of the vertical direction, the radial direction can be understood as the radial direction of the seed crystal chuck 100 or the radial direction of the outer shell 1, and the circumferential direction can be understood as the radial direction of the seed crystal chuck 100 or the circumferential direction of the outer shell 1.

[0066] Optionally, L1 is 60mm, and L2 is ≥280mm; further, L2 is ≥320mm. The length of the seed crystal 41 at the growth site ranges from 280mm to 320mm. For example, the length of the seed crystal 41 at the growth site can be 280mm, 290mm, 300mm, 315mm, or 320mm, etc.

[0067] In some embodiments, such as Figures 2-3 As shown, the seed crystal chuck 100 also includes an upper shell 10, which defines a motion cavity 10a. The motion cavity 10a is connected to the upper side of the first holding cavity 1a. The first drive assembly 2 is disposed in the motion cavity 10a and includes a first drive member 23, a lead screw 21, and a push block 22. The first drive member 23 is located on the upper side of the upper shell 10 or inside the motion cavity 10a to provide power to the lead screw 21. The lead screw 21 passes through the upper shell 10 and is connected to the first drive member 23 and the push block 22 respectively. The center of the push block 22 is provided with a threaded hole to be threadedly engaged with the lead screw 21. The motion cavity 10a and the push block 22 are matched to limit the rotation of the push block 22 along the circumference of the lead screw 21, so that the rotation of the lead screw 21 can drive the push block 22 to move downward. The push block 22 moves downward to push the seed crystal 41 at the growth position to move downward.

[0068] The push block 22 is adapted to be limited to the first holding cavity 1a so that after the push block 22 moves into the first holding cavity 1a, the first holding cavity 1a can restrict the rotation of the push block 22 along the circumferential direction of the lead screw 21 to ensure that the push block 22 moves down smoothly.

[0069] Optionally, the motion cavity 10a and the push block 22 can be matched by a protrusion and a groove. The protrusion is formed on one of the cavity walls of the motion cavity 10a and the push block 22, and the groove is formed on the other of the cavity walls of the motion cavity 10a and the push block 22. The protrusion and the groove extend along the axial direction of the lead screw 21. Of course, the first holding cavity 1a and the push block 22 can also be matched by a protrusion and a groove, which will not be described in detail here.

[0070] Optionally, the wall of the moving cavity 10a and the wall of the first holding cavity 1a are smoothly transitioned, and the moving cavity 10a and the first holding cavity 1a are coaxially arranged to ensure stable movement of the pusher 22.

[0071] Of course, the structure of the first drive component 2 is not limited to this; for example, the first drive component 2 may also include a drive cylinder, etc.

[0072] In some embodiments, such as Figure 1 As shown, the seed crystal chuck 100 also includes a clamping component 3, which is disposed in the holding cavity and defines a first holding cavity 1a. A first limiting part 3a is formed on the inner wall of the clamping component 3. The first limiting part 3a is adapted to cooperate with a plurality of second limiting parts 4a arranged axially at intervals on the outer peripheral wall of the growth seed crystal 41. The first limiting part 3a is adapted to cooperate with each of the plurality of second limiting parts 4a to limit the movement of the growth seed crystal 41 in the vertical direction, so as to ensure the stability of the growth seed crystal 41 during the crystal growth process.

[0073] For example, one of the first limiting part 3a and the second limiting part 4a is a protrusion and the other is a groove; or, the first limiting part 3a can be a rubber part and the second limiting part 4a is part of the outer peripheral wall of the growth seed crystal 41. The first limiting part 3a and the outer peripheral wall of the growth seed crystal 41 are closely fitted so that the first limiting part restricts the movement of the growth seed crystal 41 in the vertical direction.

[0074] As can be seen, the clamping component 3 can be used to clamp the growth seed crystal 41, restricting its vertical movement and rotation to prevent it from easily falling off. This reduces the connection requirements between the first driving component 2 and the growth seed crystal 41. For example, the first driving component 2 and the growth seed crystal 41 can be unconnected. The first driving component 2 can apply downward pressure to the growth seed crystal 41 to move it downward. When the entire growth seed crystal 41 can no longer be used for crystal growth, the clamping component 3 can release the growth seed crystal 41 to achieve rapid separation of the growth seed crystal 41 from the seed crystal chuck 100, saving the separation process between the growth seed crystal 41 and the first driving component 2. Of course, the first driving component 2 and the growth seed crystal 41 can also be connected (e.g., detachable connection). When the first driving component 2 and the growth seed crystal 41 are connected, the seed crystal chuck 100 can be equipped with the clamping component 3 or not.

[0075] Optionally, such as Figure 1 As shown, the first limiting part 3a is formed as a latching protrusion, and the second limiting part 4a is formed as a latching groove. On the longitudinal section of the clamping assembly 3, the upper surface of the latching protrusion is flat, which allows the latching protrusion to better engage with the latching groove to restrict the downward movement of the growth seed crystal 41. The lower surface of the latching protrusion is arc-shaped, which can increase the contact area between the latching protrusion and the growth seed crystal 41 to improve the limiting effect. The longitudinal section of the clamping assembly 3 is perpendicular to the cross-section of the clamping assembly 3, and the longitudinal section of the clamping assembly 3 passes through the central axis of the clamping assembly 3.

[0076] Alternatively, both the first limiting part 3a and the second limiting part 4a extend circumferentially into annular structures. For example, the first limiting part 3a is formed as an annular protrusion, and the second limiting part 4a is formed as an annular groove, so as to ensure the stable positioning of the clamping component 3 on the entire growth seed crystal 41.

[0077] In some embodiments, such as Figure 1 As shown, there are multiple first limiting parts 3a, which are spaced apart in the vertical direction. The axial distance between two adjacent first limiting parts 3a is an integer multiple of the axial distance between two adjacent second limiting parts 4a. This ensures that no matter how the growth seed crystal 41 is adjusted vertically, each first limiting part 3a can be matched with the corresponding second limiting part 4a. In other words, when the clamping component 3 is used to clamp the growth seed crystal 41, the multiple first limiting parts 3a are used to restrict the growth seed crystal 41. This ensures that the clamping component 3 can stably clamp and restrict the growth seed crystal 41, ensuring that the growth seed crystal 41 is always in a vertical state, thus preventing the growth seed crystal 41 from deflecting.

[0078] Of course, the first limiting part 3a can also be one.

[0079] In some embodiments, such as Figure 6 and Figure 7 As shown, the clamping assembly 3 includes a plurality of clamps 31 arranged sequentially along the circumferential direction, and the first limiting part 3a includes a plurality of limiting sub-parts 31a arranged sequentially along the circumferential direction. The inner wall of each clamp 31 is formed with a limiting sub-part 31a. The plurality of limiting sub-parts 31a are used to work together to limit the movement of the growth seed crystal 41.

[0080] Each clamp 31 is radially adjustable so that the clamping assembly 3 has a clamping state and a releasing state. In the clamping state, each clamp 31 is adapted to abut against the growth seed crystal 41 to achieve clamping of the growth seed crystal 41 by the clamping assembly 3. In the releasing state, each clamp 31 is adapted to separate from the growth seed crystal 41 to achieve release of the growth seed crystal 41 by the clamping assembly 3.

[0081] For example, in the clamping state, the limiting sub-part 31a of each clamp 31 abuts against the second limiting part 4a of the growth seed crystal 41 to ensure the fixed stability of the growth seed crystal 41 and prevent the growth seed crystal 41 from moving in the vertical direction. Alternatively, the limiting sub-part 31a of each clamp 31 abuts against the outer peripheral wall of the growth seed crystal 41, which can also limit the vertical movement of the growth seed crystal 41 to a certain extent. It can be seen that in the clamping state, each clamp 31 applies a force to the growth seed crystal 41 to ensure that the multiple clamps 31 reliably limit the growth seed crystal 41. At the same time, the multiple clamps 31 are arranged circumferentially to make the limiting force applied to the growth seed crystal 41 balanced, preventing the growth seed crystal 41 from deflecting during the crystal growth process. In the released state, the clamping component 3 does not apply a force to the growth seed crystal 41. At this time, it can be used to separate the clamping component 3 from the growth seed crystal 41, for example, when the entire growth seed crystal 41 cannot meet the requirements for further crystal growth.

[0082] For example, in Figure 6 In the example, the clamping component 3 includes four circumferentially arranged clamps 31, which form a hollow cylindrical first holding cavity 1a. The inner wall of each clamp 31 has multiple vertically spaced limiting sub-parts 31a. The limiting sub-parts 31a of the four clamps 31 form multiple vertically spaced first limiting parts 3a. Each first limiting part 3a is adapted to cooperate with the second limiting part 4a of the corresponding growth seed crystal 41, so that the clamping component 3 stably clamps the growth seed crystal 41 and ensures the stability of the crystal growth process.

[0083] In some embodiments, such as Figure 1As shown, the limiting sub-part 31a is formed as a latching protrusion, and the clamping state has a first clamping state and a second clamping state. In the first clamping state, the limiting sub-part 31a of each clamping sleeve 31 is adapted to cooperate with the corresponding second limiting part 4a to effectively restrict the movement of the growth seed crystal 41 and ensure the stability of the growth seed crystal 41 during the crystal growth process. In the second clamping state, the limiting sub-part 31a of each clamping sleeve 31 is adapted to cooperate with other positions on the outer peripheral wall of the growth seed crystal 41 other than the second limiting part 4a to restrict the movement of the growth seed crystal 41 to a certain extent. This ensures the stability of the growth seed crystal 41 and facilitates the first driving member 23 to drive the growth seed crystal 41 to move downward to meet the requirements of the crystal growth process again, so that the growth seed crystal 41 can be crystal grown again.

[0084] In the first clamping state, the radial distance between the clamping sleeve 31 and the central axis of the outer shell 1 is less than that in the second clamping state. This ensures that the clamping component 3 effectively limits the growth seed crystal 41 in the first clamping state and also limits the growth seed crystal 41 to a certain extent in the second clamping state. This allows the growth seed crystal 41 to move downward under the action of the first driving component 2 while being clamped by the clamping component 3 in the second clamping state.

[0085] It is evident that the force exerted by the clamping component 3 on the growth seed crystal 41 in the first clamping state is greater than the force exerted by the clamping component 3 on the growth seed crystal 41 in the second clamping state. Therefore, when the growth seed crystal 41 needs to be adjusted, the clamping component 3 can switch to the second clamping state to facilitate the rapid adjustment of the growth seed crystal 41. When the growth seed crystal 41 does not need to be adjusted, the clamping component 3 can maintain the first clamping state.

[0086] Optionally, such as Figure 6 As shown, in the first clamping state, multiple clamping sleeves 31 are spliced ​​into a complete annular structure, with adjacent clamping sleeves 31 in contact with each other. At this time, the limiting sub-parts 31a of the multiple clamping sleeves 31 are spliced ​​into an annular first limiting part 3a to ensure stable clamping of the growth seed crystal 41. Of course, this application is not limited to this; in the first clamping state, adjacent clamping sleeves 31 can also be spaced apart from each other.

[0087] In some embodiments, such as Figures 1-2 As shown, the seed crystal chuck 100 also includes a detection component 5, which is disposed in the outer shell 1 and located outside the holding cavity. The detection component 5 includes an image acquisition device 51 and a moving part 52. The image acquisition device 51 is mounted on the moving part 52 and is used to acquire an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a at the growth position.

[0088] The image acquisition device 51 includes at least one image acquisition element 511. The image acquisition device 51 acquires an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a through the image acquisition element 511. This image can be used to determine whether the portion of the seed crystal 41 extending out of the first holding cavity 1a can continue to be used for the next crystal growth. The position of the moving element 52 in the axial direction is adjustable, that is, the position of the moving element 52 in the vertical direction is adjustable, so that the detection component 5 has a first state and a second state. In the first state, the detection component 5 is located on the upper side of the lower end face of the outer shell 1. In this case, both the image acquisition device 51 and the moving element 52 are located on the upper side of the lower end face of the outer shell 1 to avoid the detection component 5 affecting the pulling of the crystal rod during the crystal growth process, and to avoid damaging the detection component 5. In the second state, the image acquisition device 51 is located on the lower side of the lower end face of the outer shell 1 to facilitate the image acquisition device 51 in acquiring an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a, ensuring the convenience and accuracy of the image acquisition device 51 in acquiring images.

[0089] As can be seen, the switching between the first state and the second state of the detection component 5 can be achieved by the up-and-down movement of the moving part 52. The moving part 52 moves downward to drive the image acquisition device 51 downward so that the image acquisition device 51 is located on the lower side of the lower end face of the housing 1. At this time, the detection component 5 switches to the second state. The moving part 52 moves upward to drive the image acquisition device 51 upward so that both the image acquisition device 51 and the moving part 52 are located on the upper side of the lower end face of the housing 1. At this time, the detection component 5 switches to the first state.

[0090] This facilitates the state switching of detection component 5 and improves its adaptability.

[0091] In some embodiments, such as Figures 4-5 As shown, in the second state, the moving part 52 and the outer shell 1 are pivotally coupled in the circumferential direction, so that the moving part 52 can drive the image acquisition device 51 to rotate in the circumferential direction along the outer shell 1, so that the image acquisition device 51 can acquire a complete image of the outer peripheral wall of the part of the seed crystal 41 extending out of the first holding cavity 1a, so as to ensure accurate crystal growth judgment.

[0092] Of course, in other embodiments of this application, the image acquisition device 51 and the moving part 52 are pivotally coupled in the circumferential direction, so that the image acquisition device 51 rotates relative to the moving part 52 in the circumferential direction of the outer shell 1, which can also enable the image acquisition device 51 to acquire a complete image of the outer peripheral wall of the part of the seed crystal 41 extending out of the first holding cavity 1a.

[0093] It can be seen that whether the moving part 52 is pivotally engaged with the outer shell 1 in the axial direction, or the image acquisition device 51 is pivotally engaged with the moving part 52 in the circumferential direction, the image acquisition device 51 can acquire a complete image of the outer peripheral wall of the part of the seed crystal 41 extending out of the first holding cavity 1a by rotating one image acquisition element 511 relative to the outer shell 1 in the circumferential direction, or it can acquire the above-mentioned complete image by rotating multiple image acquisition elements 511 relative to the outer shell 1 in the circumferential direction.

[0094] Of course, when there are multiple image acquisition units 511 and the quantity is appropriate, the image acquisition device 51 can acquire the above-mentioned complete image without rotating relative to the outer casing 1 in the circumferential direction.

[0095] For example, in Figures 4-5 In the example, the detection component 5 includes an image acquisition device 51 and a moving component 52. The image acquisition device 51 is located at the lower end of the moving component 52. The moving component 52 is disposed on the outer peripheral wall of the housing 1, and the moving component 51 slides and engages with the housing 1 in the vertical direction, so that the moving component 51 has a first position and a second position in the vertical direction. The outer peripheral wall of the housing 1 is also provided with an annular rack 11 extending in the circumferential direction. The inner wall of the moving component 52 is provided with gear teeth that engage with the annular rack 11. When the moving component 52 moves downward from the first position to the second position in the vertical direction, the gear teeth of the moving component 52 mesh with the annular rack 11. At this time, the driving module can be used to drive the moving component 52 to rotate in the circumferential direction relative to the housing 1, so as to realize the rotation of the image acquisition component 511.

[0096] Optionally, when the image acquisition device 51 includes one image acquisition element 511, the moving element 52 can drive the image acquisition element 511 to rotate one revolution, so that the acquisition lens of the image acquisition element 511 can acquire an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the opening 1c, thereby enabling the image acquisition device 51 to acquire an image of the entire outer peripheral wall of the seed crystal 41. Of course, there can be two, three, or more image acquisition elements 511.

[0097] In some embodiments, such as Figures 2-5 As shown, the image acquisition component 511 and the moving component 52 are pivotally coupled. In the first state, the acquisition lens of the image acquisition component 511 is set downwards, and at this time, the acquisition lens of the image acquisition component 511 is located on the upper side of the lower end face of the housing 1 to avoid interference between the image acquisition component 511 and the crystal rod or other components during the crystal pulling process of the seed crystal chuck 100. In the second state, the acquisition lens of the image acquisition component 511 is set towards the central axis of the first holding cavity 1a, so that the acquisition lens can accurately acquire the image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a. It can be seen that the pivot axis between the image acquisition component 511 and the moving component 52 is set horizontally.

[0098] Therefore, by pivoting the image acquisition component 511 with the moving component 52, the image acquisition component 511 can reliably acquire images. This is especially applicable to image acquisition components 511 with long acquisition lenses or large dimensions in the direction of the central axis of the acquisition lens, and will not excessively increase the space occupied by the seed crystal chuck 100 in the horizontal direction.

[0099] Understandably, in the second state, the central axis of the acquisition lens of the image acquisition unit 511 can be perpendicular to the central axis of the first holding cavity 1a or at an acute angle to the central axis of the first holding cavity 1a. That is, in the second state, the acquisition lens of the image acquisition unit 511 can be set horizontally, or it can be set tilted upwards or tilted downwards.

[0100] For example, the image acquisition device 51 includes four image acquisition elements 511, which are equally spaced along the circumference of the outer shell 1. The central angle between two adjacent image acquisition elements 511 is 90°. Each image acquisition element 511 is pivotally coupled with the moving element 52, so that each image acquisition element 511 can swing up and down to adjust the orientation of the acquisition lens. In the first state, the acquisition lens of each image acquisition element 511 faces downward, and the lowest point of the acquisition lens is located on the upper side of the lower end face of the outer shell 1. In the second state, the acquisition lens of each image acquisition element 511 is perpendicular to the outer peripheral wall of the growth seed crystal 41.

[0101] In some embodiments, such as Figure 6 As shown, the holding cavity also includes at least one second holding cavity 1b, which is used to place a spare seed crystal 42, effectively increasing the number of seed crystals that the seed crystal chuck 100 can hold. The seed crystal chuck 100 also includes a second driving component 6, which is used to drive the spare seed crystal 42 located in the second holding cavity 1b to the first holding cavity 1a, so that the spare seed crystal 42 is transformed into a growth seed crystal 41. This allows the spare seed crystal 42 to be used for the next crystal growth when the entire growth seed crystal 41 cannot be used for the next crystal growth, further increasing the number of crystal growth cycles that the seed crystal chuck 100 can perform after a single seed crystal assembly, thereby further extending the seed crystal replacement cycle.

[0102] Optionally, the height of the second holding cavity 1b is equal to the height of the first holding cavity 1a.

[0103] Optionally, the lengths of the spare seed crystal 42 and the growth seed crystal 41 are equal, for example, the lengths of the spare seed crystal 42 and the growth seed crystal 41 range from 280mm to 320mm. Optionally, the lengths of the spare seed crystal 42 and the growth seed crystal 41 can be 280mm, 290mm, 300mm, 315mm, or 320mm, etc.

[0104] For example, in Figure 6 In this example, there are four second holding cavities 1b, which are equally spaced circumferentially and located radially outside the first holding cavity 1a. Each second holding cavity 1b is used to hold a spare seed crystal 42, and each second holding cavity 1b corresponds to a second driving component 6. Each spare seed crystal 42 is driven to the first holding cavity 1a by the corresponding second driving component 6 to become a growth seed crystal 41. Of course, there can also be one, two, three, or more than four second holding cavities 1b.

[0105] In some embodiments, such as Figures 6-7 As shown, the seed crystal chuck 100 also includes a clamping assembly 3, which is disposed in the holding cavity. The first holding cavity 1a is located inside the clamping assembly 3, and the second holding cavity 1b is located outside the clamping assembly 3. The clamping assembly 3 includes a plurality of sleeves 31 arranged sequentially along the circumference. The radial position of each sleeve 31 is adjustable, so that the clamping assembly 3 has a clamping state and a released state. In the clamping state, each sleeve 31 is adapted to abut against the growth seed crystal 41 to realize the clamping of the growth seed crystal 41 by the clamping assembly 3, ensuring the stable setting of the growth seed crystal 41. In the released state, two adjacent sleeves 31 are spaced apart to define an avoidance channel 30. The avoidance channel 30 connects the first holding cavity 1a and the second holding cavity 1b, so that the spare seed crystal 42 can move to the first holding cavity 1a through the avoidance channel 30 and become the growth seed crystal 41.

[0106] The seed crystal chuck 100 also includes a plurality of third drive components 7, each third drive component 7 being used to drive the corresponding sleeve 31 to move radially to adjust the position of the corresponding sleeve 31 in the radial direction, thereby enabling the clamping component 3 to have a clamping state and a release state, and enabling the clamping component 3 to switch between the clamping state and the release state.

[0107] As can be seen, during the process of the clamping component 3 changing from the clamping state to the releasing state, each clamp 31 moves in a direction away from the central axis of the outer shell 1. As the multiple clamps 31 move away from each other, each clamp 31 can first separate from the growth seed crystal 41 so that the growth seed crystal 41 that cannot meet the requirements for the next crystal growth can be separated, so as to free up the first holding cavity 1a for the spare seed crystal 42. Then, a sufficiently wide clearance channel 30 is separated between two adjacent clamps 31 so that one of the second driving components 7 drives the corresponding spare seed crystal 42 to move through the clearance channel 30 to the first holding cavity 1a, thereby turning the spare seed crystal 42 into the growth seed crystal 41 to continue the next crystal growth.

[0108] In some embodiments, such as Figure 1As shown, the second driving component 6 is offset from the clamping component 3 and the third driving component 7 along the axial direction to avoid interference between the second driving component 6 and the clamping component 3 and the third driving component 7. This ensures that the second driving component 6 operates in both the clamping and releasing states of the clamping component 3. When the clamping component 3 is in the releasing state, the second driving component 6 drives the spare seed crystal 42 to the first holding cavity 1a. Then, the clamping component 3 can switch to the clamping state. After the clamping component 3 is in the clamping state, the second driving component 6 can return to its initial position, ensuring the normal operation of the seed crystal chuck 100.

[0109] In some embodiments, such as Figure 6 As shown, there are multiple second holding cavities 1b and multiple second driving components 6. The multiple second holding cavities 1b and multiple clamping sleeves 31 are staggered along the circumference. Each second holding cavity 1b is radially opposite to the seam or gap between two adjacent clamping sleeves 31. When the clamping component 3 is in the released state, each second holding cavity 1b can be radially opposite to a clearance channel 30, so as to simplify the movement trajectory of the spare seed crystal 42 to the first holding cavity 1a and reduce the requirements of the second driving component 6. The multiple second driving components 6 and multiple third driving components 7 are staggered along the circumference. In the circumferential direction, there is a third driving component 7 between two adjacent second driving components 6 and a second driving component 6 between two adjacent third driving components 7, so as to avoid interference between the second driving components 6 and the third driving components 7.

[0110] For example, in Figure 6 In the example, the clamping assembly 3 includes four clamps 31 arranged sequentially along the circumference. The growth seed crystal 41 is disposed in the four clamps 31. Each clamp 31 is provided with a third driving assembly 7. The third driving assembly 7 is used to drive the corresponding clamp 31 to move radially. The holding cavity also includes four second holding cavities 1b. Each second holding cavity 1b is provided with a spare seed crystal 42. Each second holding cavity 1b is provided with a second driving assembly 6. The second driving assembly 6 is located on the side of the second holding cavity 1b away from the growth seed crystal 41. The second driving assembly 6 is used to drive the corresponding spare seed crystal 42 to move to the first holding cavity 1a.

[0111] In some embodiments, such as Figure 6 As shown, the second driving component 6 is configured to drive the spare seed crystal 42 to move radially so as to drive the spare seed crystal 42 to the first holding cavity 1a. The movement path of the spare seed crystal 42 is short and simple, which makes it easy to simplify the structure of the second driving component 6.

[0112] like Figure 6As shown, the second driving assembly 6 includes a driving mechanism 61 and a clamping member 62. The clamping member 62 is connected to the driving mechanism 61 and is driven to move by the driving mechanism 61. That is, the driving mechanism 61 drives the clamping member 62 to move radially to move the spare seed crystal 42 to the first holding cavity 1a. The clamping member 62 includes a first clamping arm 621 and a second clamping arm 622. The first clamping arm 621 and the second clamping arm 622 pivotally cooperate to adjust the size of the clamping opening of the clamping member 62, so as to realize the clamping and release of the spare seed crystal 42 by the first clamping arm 621 and the second clamping arm 622.

[0113] In some embodiments, such as Figures 6-10 As shown, the second drive assembly 6 further includes a second drive member 63, which is used to drive at least one of the first clamping arm 621 and the second clamping arm 622 to rotate in order to adjust the size of the clamping opening of the clamping member 62. The rotation axes of the first clamping arm 621 and the second clamping arm 622 are vertically arranged.

[0114] In some embodiments, such as Figure 6 As shown, there are multiple spare seed crystals 42, that is, there are multiple second holding cavities 1b; the seed crystal chuck 100 also includes multiple first slide rails 8, and the multiple first slide rails 8 correspond one-to-one with multiple clamping sleeves 31. Then, one clamping sleeve 31 corresponds to one third driving component 7 and one first slide rail 8. The clamping sleeve 31 and the third driving component 7 are set on the first slide rail 8. The third driving component 7 is adapted to drive the clamping sleeve 31 to move along the extension direction of the first slide rail 8 to ensure that the clamping sleeve 31 moves smoothly and realizes stable switching of different states of the clamping component 3.

[0115] The seed crystal chuck 100 also includes multiple second slide rails 9, each corresponding to a multiple spare seed crystal 42. That is, each second slide rail 9 corresponds to a second holding cavity 1b and a spare seed crystal 42. The second drive assembly 6 and the spare seed crystal 42 are mounted on the second slide rails 9. Each second slide rail 9 has a groove 9a on its upper side, which extends radially along the second slide rail 9. The clamping member 62 is located in the groove 9a, and the axial thickness of the groove 9a is the same as the axial thickness of the clamping member 62. That is, the depth of the groove 9a is the same as the thickness of the clamping member 62 in the vertical direction, so as to reduce the height of the clamping member 62 and prevent the entire clamping member 62 from protruding from the top of the groove 9a. This helps to avoid interference between the clamping member 62 and the clamping assembly 3 and the third drive assembly 7. It can be seen that the second slide rails 9 guide the movement of the clamping member 62 to ensure that the clamping member 62 moves smoothly and realizes the smooth transfer of the spare seed crystal 42.

[0116] Along the axial direction of the outer shell 1, that is, in the vertical direction, the top surface of the clamping member 62 is flush with the bottom surface of the third driving component 7, or the top surface of the clamping member 62 is lower than the bottom surface of the third driving component 7, so as to realize the misalignment of the clamping member 62 and the third driving component 7 in the vertical direction, so as to avoid interference between the clamping member 62 and the third driving component 7 during the process of the clamping member 62 moving to the first holding cavity 1a and during the process of the clamping member 62 returning to its original position from the first holding cavity 1a, thus ensuring the normal operation of the seed crystal chuck 100.

[0117] In this arrangement, multiple second slide rails 9 and multiple first slide rails 8 are staggered along the circumferential direction of the first holding cavity 1a.

[0118] According to the control method of the seed crystal chuck 100 of the second aspect embodiment of the present invention, the seed crystal chuck 100 is the seed crystal chuck 100 of the first aspect embodiment of the present invention, the growth seed crystal 41 has multiple long crystal segments arranged sequentially along the length direction, the multiple long crystal segments include a first long crystal segment and a second long crystal segment, the first long crystal segment is connected to the lower side of the second long crystal segment.

[0119] The control method includes the following steps: S1, the first crystal growth segment extends through the port 1c, and after being used for a single crystal growth, it is determined whether the first crystal growth segment meets the first crystal growth condition; S2, if not, the first crystal growth segment is cut off, and the first driving component 2 drives the growth seed crystal 41 to move downward so that the second crystal growth segment extends through the port 1c, so that the seed crystal portion of the growth seed crystal 41 extending through the port 1c meets the requirements for the next crystal growth. At this time, the second crystal growth segment extending through the port 1c is transformed into the first crystal growth segment for use in the next crystal growth. The first crystal growth condition can be the condition required for the next crystal growth.

[0120] According to the control method of the seed crystal chuck 100 of the present invention, by setting the growth position seed crystal 41 to have multiple long crystal segments, when the first long crystal segment does not meet the requirements of the next crystal growth, the first driving component 2 pushes out the second long crystal segment through the port 1c for the next crystal growth, so that the growth position seed crystal 41 can complete multiple crystal growths, reduce the seed crystal replacement time, and improve the production efficiency of crystal rods.

[0121] In some embodiments, the first crystal growth condition is: A1 / A0 < a first preset value, where A0 is the surface area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth, and A1 is the oxidation area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth. That is, the first crystal growth condition is that the oxidation area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth is less than the first preset value. If the first crystal growth segment still meets the first crystal growth condition after a single crystal growth, then the first crystal growth segment can continue to be used for the next crystal growth. If the first crystal growth segment does not meet the first crystal growth condition after a single crystal growth, then the first crystal growth segment cannot continue to be used for the next crystal growth, and the first crystal growth segment is directly removed.

[0122] For example, the seed crystal chuck 100 includes a detection component 5, which includes an image acquisition device 51. The image acquisition device 51 is used to acquire an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a. That is, the image acquisition device 51 can be used to acquire an image of the peripheral sidewall of the first crystal growth segment. Step S1 may include: after a single crystal growth, acquiring an image of the peripheral sidewall of the first crystal growth segment; and analyzing the image to calculate the oxidation area ratio of the peripheral sidewall of the first crystal growth segment to determine whether the first crystal growth segment meets the first crystal growth condition. Since the color of the oxidized part is different from the color of the unoxidized part after the peripheral sidewall of the first crystal growth segment is oxidized, the oxidized part is light yellow, so that the oxidized part and the unoxidized part can be distinguished according to the image, thereby obtaining the oxidation area ratio of the peripheral sidewall of the first crystal growth segment. The oxidation area ratio of the peripheral sidewall of the first crystal growth segment in the image is the same as the actual oxidation area ratio of the peripheral sidewall of the first crystal growth segment.

[0123] In some embodiments, such as Figure 13 As shown, the control method further includes: S3, after a single crystal growth, determining whether the first crystal growth segment meets the second crystal growth condition, the second crystal growth condition being: L≥L1, where L is the current length of the first crystal growth segment; S4, if not, the first driving component 2 drives the growth seed crystal 41 to move downwards so that the second crystal growth segment extends through the through-hole 1c. At this time, the second crystal growth segment extending through the through-hole 1c is transformed into the first crystal growth segment for use in the next crystal growth.

[0124] It is understandable that if the first crystal growth segment meets the conditions for the second crystal growth, it means that the second crystal growth segment can meet the requirements for the next crystal growth. At this time, the first driving component 2 does not need to be operated, and the seed crystal 41 at the growth position does not need to be adjusted.

[0125] Specifically, step S1, which determines whether the first crystal growth segment meets the first crystal growth condition, and step S3, which determines whether the first crystal growth segment meets the second crystal growth condition, can be performed simultaneously. Step S1 can be performed first and then step S3, or step S3 can be performed first and then step S1. The single crystal growth in step S1 and the single crystal growth in step S3 refer to the same crystal growth.

[0126] For example, if step S1 is performed first, step S3 is performed only if the first long crystal segment meets the first crystal growth condition. If the first long crystal segment does not meet the first crystal growth condition, step S3 can be skipped. In step S1, the ratio of the oxidation area A1 of the peripheral sidewall of the first long crystal segment to the surface area A0 of the peripheral sidewall of the first long crystal segment is first determined to be relative to a first preset value. If A1 / A0 < the first preset value, then the relationship between L and L1 is determined. If L ≥ L1, then the first long crystal segment meets the requirements for the next crystal growth. If A1 / A0 < the first preset value and L < L1, it indicates that the first long crystal segment can be used for the next crystal growth, but the length of the first long crystal segment cannot meet the requirements for the next crystal growth. Then, the first driving component 2 drives the growth seed crystal 41 to move downward so that the second long crystal segment extends through the through-hole 1c. If A1 / A0 ≥ the first preset value, then there is no need to further determine whether the current length of the first long crystal segment meets the requirements for the second crystal growth, and the first long crystal segment can be directly cut off. Of course, when performing step S1 first, it is also possible to proceed to step S3 regardless of whether the first crystal growth segment meets the first crystal growth condition.

[0127] Optionally, the first preset value can be 0.7, and the minimum length of the seed crystal required for a single crystal growth process, L1, can be 60mm. Of course, the first preset value and the minimum length L1 can also be adjusted according to different seed crystal sizes or requirements.

[0128] In some embodiments, step S1 includes: S11, acquiring an image of the peripheral sidewall of the first crystal growth segment before the single crystal growth; S12, acquiring an image of the peripheral sidewall of the first crystal growth segment again after the single crystal growth; S13, calculating A0 and A1 based on the image acquired in step S12 to determine whether the first crystal growth condition is met; S14, comparing the image acquired in step S12 with the image acquired in step S11, obtaining the image ratio using the known actual axial dimension of the first crystal growth segment before crystal growth (i.e., the actual length of the first crystal growth segment) and the image size (i.e., the length of the first crystal growth segment in the image), calculating L based on the image ratio and the image size of the first crystal growth segment after crystal growth, and determining the relationship between L and L1, so as to determine whether the first crystal growth segment meets the second crystal growth condition in step S3, so as to perform corresponding operations based on the determination result.

[0129] In step S13, by analyzing the image of the peripheral sidewall of the first long crystal segment in step S12, the surface area A0 of the peripheral sidewall of the first long crystal segment and the oxidation area A1 of the peripheral sidewall of the first long crystal segment can be calculated, thereby obtaining A1 / A0, and determining the relationship between A1 / A0 and the first preset value.

[0130] It should be noted that in step S11, before the first crystal growth, just before the seed crystal chuck 100 with the seed crystal 41 and the spare seed crystal 42 installed is placed into the crystal growth furnace for the first crystal growth, the first crystal growth segment is suitable for the crystal growth process and the length of the first crystal growth segment is known. Thus, step S11 can obtain the length of the first crystal growth segment with the known length in the image, thereby obtaining the ratio between the actual axial length of the first crystal growth segment and the length of the first crystal growth segment in the image, which is used in step S14 to calculate the current actual length L of the first crystal growth segment after the first crystal growth in step S12.

[0131] In some embodiments, the seed crystal chuck 100 includes a detection component 5, which includes an image acquisition device 51. The image acquisition device 51 is used to acquire an image of the outer peripheral wall of the portion of the seed crystal 41 extending out of the first holding cavity 1a, i.e., the image acquisition device 51 can be used to acquire an image of the peripheral sidewall of the first long crystal segment. The detection component 5 has a first state and a second state. In the first state, the detection component 5 is located on the upper side of the lower end face of the housing 1. In the second state, the image acquisition device 51 is located on the lower side of the lower end face of the housing 1.

[0132] At this time, the control method includes: the first crystal growth segment extends through the port 1c, the detection component 5 is switched to the second state to obtain an image of the peripheral sidewall of the first crystal growth segment, and then the detection component 5 is switched to the first state to perform a single crystal growth; after the single crystal growth, the detection component 5 is switched to the second state again to obtain an image of the peripheral sidewall of the first crystal growth segment, the oxidation area ratio A1 / A0 of the peripheral sidewall of the first crystal growth segment is calculated, and the images obtained on both sides are compared to calculate the current actual length L of the first crystal growth segment. If A1 / A0 ≥ the first preset value, the first long crystal segment is directly cut off, and the first driving component 2 drives the growth seed crystal 41 to move downward so that the second long crystal segment extends through the through-hole 1c. If A1 / A0 < the first preset value, the relationship between L and L1 is determined. If L ≥ L1, the growth seed crystal 41 does not need to be adjusted, and the first long crystal segment can continue to be used to grow the next crystal rod. If L < L1, the first driving component 2 drives the growth seed crystal 41 to move downward so that the second long crystal segment extends through the through-hole 1c.

[0133] In some embodiments, such as Figure 1 , Figure 3 , Figures 5-7 As shown, the holding cavity also includes at least one second holding cavity 1b, which is used to place a spare seed crystal 42; the seed crystal chuck 100 also includes a second driving component 6, which is used to drive the spare seed crystal 42 located in the second holding cavity 1b to the first holding cavity 1a, so that the spare seed crystal 42 is transformed into a growth seed crystal 41.

[0134] At this time, as Figure 13 As shown, the control method further includes: S5, repeating steps S1, S2, S3 and S4, so that the growth seed crystal 41 is used for multiple crystal growths until the last crystal growth segment of the growth seed crystal 41 does not meet the first crystal growth condition or does not meet the second crystal growth condition, and the growth seed crystal 41 is moved out of the first holding cavity 1a from the port 1c; S6, the second driving component 6 drives the spare seed crystal 42 to move to the first holding cavity 1a, so that the spare seed crystal 42 is transformed into the growth seed crystal 41, and repeating steps S1, S2, S3 and S4, so as to further shorten the seed crystal replacement time, simplify the production process and improve production efficiency.

[0135] It is understandable that, regardless of the order in which steps S1 and S3 are executed, as long as the last segment of the growth seed crystal 41 is determined to not meet at least one of the first and second growth conditions after growth, step S5 is executed to remove the growth seed crystal 41 from the opening 1c into the first holding cavity 1a in order to realize the recycling of waste seed crystals.

[0136] In some optional embodiments, step S1 is performed first. If it is determined that the first crystal growth segment meets the first crystal growth condition, then step S3 is performed. If it is determined that the first crystal growth segment does not meet the first crystal growth condition, then step S3 can be skipped. In this case, for the last crystal growth segment of the growth seed crystal 41, when performing step S1, if it is determined that the last crystal growth segment meets the first crystal growth condition, then step S3 is performed to determine whether the last crystal growth segment meets the second crystal growth condition. If the last crystal growth segment meets the second crystal growth condition, then the last crystal growth segment continues to be used for crystal growth. If the last crystal growth segment does not meet the second crystal growth condition, then step S5 is performed to remove the growth seed crystal 41 from the port 1c. If it is determined in step S1 that the last crystal growth segment does not meet the first crystal growth condition, then step S5 can be performed directly to remove the growth seed crystal 41 from the port 1c. As can be seen, step S5 can be: repeating steps S1, S2, S3 and S4 until the last end of the growth seed crystal 41 meets the first growth condition but not the second growth condition, and the growth seed crystal 41 is moved out of the first holding cavity 1a from the opening 1c.

[0137] In some embodiments, such as Figure 6 , Figure 7 , Figure 9 and Figure 10As shown, the seed crystal chuck 100 also includes a clamping component 3 and multiple third driving components 7. The clamping component 3 includes multiple sleeves 31 arranged sequentially along the circumference. The third driving components 7 are used to drive the corresponding sleeves 31 to move radially, so that the clamping component 3 has a clamping state and a release state. At this time, in step S5, when the last long crystal segment of the growth position seed crystal 41 does not meet the first crystal growth condition or the second crystal growth condition, the clamping component 3 is controlled to change from the clamping state to the release state. The multiple sleeves 31 move away from each other under the drive of the third driving components 7 to release the growth position seed crystal 41. The growth position seed crystal 41 falls and can be collected by the seed crystal collection device to complete the recycling of the waste seed crystal. If the first driving component 2 is connected to the growth position seed crystal 41, and the first driving component 2 is separated from the growth position seed crystal 41, if the first driving component 2 is not connected to the growth position seed crystal 41, it is convenient to directly realize the recycling of the growth position seed crystal 41, and the first driving component 2 can be reset. In step S6, as the clamping component 3 changes to the released state, the two adjacent clamps 31 are spaced apart to define the clearance channel 30. The clearance channel 30 connects the first holding cavity 1a and the second holding cavity 1b. The second driving component 6 drives the corresponding spare seed crystal 42 to move through the corresponding clearance channel 30 to the first holding cavity 1a, so that the spare seed crystal 42 forms a new growth seed crystal 41. The clamping component 3 switches to the clamping state to clamp the new growth seed crystal 41. Then, under the push of the first driving component 2, the first long crystal segment of the new growth seed crystal 41 extends out through the through port 1c.

[0138] Optionally, the second driving assembly 6 includes a driving mechanism 61 and a clamping member 62. The clamping member 62 includes a first clamping arm 621 and a second clamping arm 622 that are pivotally engaged. During the process of the spare seed crystal 42 moving toward the first holding cavity 1a, the clamping member 62 always clamps the spare seed crystal 42. After the spare seed crystal 42 moves to the first holding cavity 1a and the clamping assembly 3 switches to the clamping state, the first clamping arm 621 and the second clamping arm 622 open to release the new growth seed crystal 41, and the clamping member 61 moves toward a direction away from the first holding cavity 1a under the drive of the driving mechanism 61 to reset.

[0139] In some embodiments, in step S5, if the last end of the growth seed crystal 41 does not meet the first growth condition or the second growth condition, the main chamber and the secondary chamber of the crystal growth furnace can be separated, for example, by rotating the secondary chamber to separate the secondary chamber and the main chamber. Then the growth seed crystal 41 is moved out of the first holding cavity 1a from the port 1c and falls into the seed crystal collection device at the bottom of the secondary chamber.

[0140] Below, refer to Figure 6 , Figure 7 , Figure 9 and Figure 10The following is a brief description of the specific replacement process for the spare seed crystal 42 in the embodiments of this application:

[0141] N1. Separate the main chamber and auxiliary chamber of the crystal growth furnace;

[0142] N2, the clamping component 3 switches from the clamping state to the releasing state, so that the growth seed crystal 41 falls into the seed crystal collection device at the bottom of the sub-chamber to complete the recycling of waste seed crystals and free up the first holding cavity 1a.

[0143] N3. Select a second driving component 6, so that the driving mechanism 6 drives the clamping member 62 to move the spare seed crystal 42 toward the first holding cavity 1a, so as to move from the edge position of the holding cavity to the center position of the holding cavity, until the spare seed crystal 42 moves to the first holding cavity 1a, and the spare seed crystal 42 is coaxially aligned with the opening 1a. At this time, the spare seed crystal 42 is transformed into a new growth seed crystal 41. During the above process, the clamping member 62 always clamps the spare seed crystal 42.

[0144] N4. Then the clamping component 3 switches from the released state to the clamping state to clamp the new growth site seed crystal 41. Then the clamping member 62 opens, so that the inner wall of the first clamping arm 621 and the inner wall of the second clamping arm 622 are separated from the outer wall of the new growth site seed crystal 41.

[0145] N5. Finally, the corresponding drive mechanism 6 drives the clamping member 62 to move toward the edge of the holding cavity to achieve reset.

[0146] The following is a brief description of the detection process of the first growth segment of the seed crystal 41 in the embodiments of this application. The detection component 5 includes an image acquisition device 51 and a moving component 52. The image acquisition device 51 includes multiple image acquisition elements 511:

[0147] M1, the first long crystal segment extends through the through port 1c, and the moving part 52 moves downward from the first position to the second position, so that the image acquisition part 511 is located on the lower side of the lower end face of the housing 1.

[0148] M2 controls the image acquisition unit 511 to rotate relative to the moving part 52, and the acquisition lens of the image acquisition unit 511 is set towards the central axis of the first holding cavity 1a, so that the acquisition lens of the image acquisition unit 511 is set towards the first long crystal segment. At this time, the detection component 5 switches to the second state.

[0149] M3 controls the motion component 52 to rotate relative to the outer shell 1, so as to take pictures of the first long crystal segment using multiple image acquisition components 511, and stitch the pictures taken by multiple image acquisition components 511 into a complete seed crystal peripheral sidewall image, which can be defined as the original image.

[0150] M4. Control the image acquisition component 511 to rotate relative to the moving component 52, and set the acquisition lens of the image acquisition component 511 downward, and control the moving component 52 to move upward from the second position to the first position, so that the detection component 5 is located on the upper side of the lower end face of the housing 1. At this time, the detection component 5 switches to the first state.

[0151] M5. The seed crystal chuck 100 is controlled by the lifting mechanism to drive the growth position seed crystal 41 to move up and down while rotating at the same time. After passing through the crystal pulling, shoulder forming, shoulder turning, equal diameter, tailing, and cooling in sequence, the grown crystal rod is cut off from the seed crystal. During the crystal growth process and the final cutting process, the growth position seed crystal 41 will be damaged.

[0152] M6. Control the moving part 52 to move downward from the first position to the second position, and control the acquisition lens of the image acquisition part 511 to be set towards the central axis of the first holding cavity 1a, and control the moving part 52 to rotate relative to the outer shell 1 so that multiple image acquisition parts 511 take pictures of the entire peripheral sidewall of the first long crystal segment, and stitch the pictures taken by multiple image acquisition parts 511 into a complete seed crystal peripheral sidewall image. This image can be defined as the current state image. By analyzing the current state image, the oxidation area ratio A1 / A0 of the peripheral sidewall of the first long crystal segment can be obtained. By comparing and analyzing the current state image with the original image, the current actual length L of the first long crystal segment can be obtained.

[0153] M7. If A1 / A0 ≥ the first preset value, then the first long crystal segment is completely cut off. Then, the clamping component 3 switches to the second clamping state, so that the first limiting part 3a and the second limiting part 4a disengage, and the first limiting part 3a engages with other positions on the outer peripheral wall of the growth seed crystal 41 except for the second limiting part 4a, ensuring that the first limiting part 3a abuts against the growth seed crystal 41 and preventing the growth seed crystal 41 from falling directly. Then, the growth seed crystal 41 is driven downward by the first driving component 2, so that the first limiting part 3a engages with the next second limiting part 4a, thereby allowing the second long crystal segment to extend through the through-hole 1c, so as to complete the purpose of moving the growth seed crystal 41 downward by one long crystal segment. Then, the steps M1-M4 are repeated.

[0154] M8. If A1 / A0 < the first preset value, then determine the relationship between L and L1. If L ≥ L1, then the first growth segment can meet the requirements for the next growth segment. If L < L1, then move the growth seed crystal 41 down one segment according to the steps in M7. Then, repeat the steps of M1-M4.

[0155] It is understandable that in M7 and M8, if the growth seed crystal 41 is already in the last section and the last end of the growth seed crystal 41 cannot meet the requirements for the next growth, then the growth seed crystal needs to be replaced. The specific steps are as described in N1-N5 above.

[0156] A crystal growth furnace according to a third aspect of the present invention includes a seed crystal chuck 100 according to a first aspect of the present invention.

[0157] According to an embodiment of the present invention, the crystal growth furnace improves the production efficiency of the crystal growth furnace by employing the above-described seed crystal chuck 100.

[0158] In the description of this invention, it should be understood that the terms "center," "length," "width," "thickness," "upper," "lower," "front," "rear," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, features defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0159] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0160] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0161] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0162] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A seed crystal chuck, characterized in that, The minimum length of the seed crystal required for a single crystal growth process is L1, and the seed crystal chuck includes: The outer shell defines a holding cavity, which includes a first holding cavity for placing a single growth seed crystal. The bottom of the first holding cavity has an opening so that the lower end of the growth seed crystal located in the first holding cavity can extend through the opening. The height of the first holding cavity is L2, where L2 ≥ 2 * L1. A clamping assembly is disposed in the holding cavity and defines the first holding cavity. A first limiting portion is formed on the inner wall of the clamping assembly. The first limiting portion is adapted to cooperate with a plurality of second limiting portions arranged axially at intervals on the outer peripheral wall of the growth seed crystal to limit the movement of the growth seed crystal in the vertical direction. A first driving component is disposed in the housing and is used to drive the growth seed crystal located in the first holding cavity to move downward relative to the clamping component, so as to increase the length of the growth seed crystal extending through the opening; The clamping assembly includes a plurality of clamps arranged sequentially along the circumference, and the first limiting portion includes a plurality of limiting sub-parts arranged sequentially along the circumference. The inner wall of each clamp is formed with the limiting sub-part, and the radial position of each clamp is adjustable, so that the clamping assembly has a clamping state and a releasing state. In the clamping state, each clamp is adapted to abut against the growth seed crystal; in the releasing state, each clamp is adapted to separate from the growth seed crystal. The limiting sub-part is formed as a latching protrusion. The clamping state has a first clamping state and a second clamping state. In the first clamping state, the limiting sub-part of each clamp is adapted to cooperate with the corresponding second limiting part. In the second clamping state, the limiting sub-part of each clamp is adapted to cooperate with other positions on the outer peripheral wall of the growth seed crystal other than the second limiting part. Wherein, in the first clamping state, the radial distance between the clamp and the central axis of the outer shell is less than the radial distance between the clamp and the central axis of the outer shell in the second clamping state.

2. The seed crystal chuck according to claim 1, characterized in that, Also includes: A detection component is disposed in the housing and located outside the holding cavity. The detection component includes an image acquisition device and a moving component. The image acquisition device is mounted on the moving component and is used to acquire an image of the outer peripheral wall of the portion of the growth seed crystal extending outside the first holding cavity. The image acquisition device includes at least one image acquisition element. The position of the moving component in the axial direction is adjustable, so that the detection component has a first state and a second state. In the first state, the detection component is located on the upper side of the lower end face of the housing. In the second state, the image acquisition device is located on the lower side of the lower end face of the housing.

3. The seed crystal chuck according to claim 2, characterized in that, In the second state, the moving part and the outer shell are pivotally engaged circumferentially; or, The image acquisition device and the moving part pivot in a circumferential direction.

4. The seed crystal chuck according to claim 2, characterized in that, The image acquisition component is pivotally coupled with the moving component. In the first state, the acquisition lens of the image acquisition component is set downwards. In the second state, the acquisition lens of the image acquisition component is set towards the central axis of the first holding cavity.

5. The seed crystal chuck according to claim 1, characterized in that, The holding cavity further includes at least one second holding cavity, the second holding cavity being used to hold a spare seed crystal, and the seed crystal chuck further includes: The second driving component is used to drive the spare seed crystal located in the second holding cavity to the first holding cavity, so that the spare seed crystal is transformed into the growth seed crystal.

6. The seed crystal chuck according to claim 5, characterized in that, Also includes: A clamping assembly is disposed in the holding cavity, the first holding cavity is located inside the clamping assembly, the second holding cavity is located outside the clamping assembly, and the clamping assembly includes a plurality of clamps arranged sequentially along the circumferential direction; Multiple third driving components are provided, each of which drives the corresponding clamp to move radially, so that the clamping component has a clamping state and a releasing state. In the clamping state, each clamp is adapted to abut against the growth site seed crystal. In the releasing state, two adjacent clamps are spaced apart to define an avoidance channel. The avoidance channel connects the first holding cavity and the second holding cavity, so that the spare site seed crystal is adapted to move to the first holding cavity through the avoidance channel.

7. The seed crystal chuck according to claim 6, characterized in that, There are multiple second holding cavities and multiple second driving components. The multiple second holding cavities and multiple jackets are staggered in the circumferential direction. The multiple second driving components and multiple third driving components are staggered in the circumferential direction.

8. The seed crystal chuck according to claim 7, characterized in that, The second driving component is configured to drive the spare seed crystal to move radially, and the second driving component includes: Drive mechanism; A clamping member is connected to the driving mechanism to be driven to move by the driving mechanism. The clamping member includes a first clamping arm and a second clamping arm, which are pivotally engaged to adjust the size of the clamping opening of the clamping member.

9. The seed crystal chuck according to claim 8, characterized in that, Multiple spare seed crystals are provided, and the seed crystal chuck further includes: Multiple first slide rails are provided, and each of the multiple first slide rails corresponds to a multiple of the clamps. The clamps and the third drive assembly are disposed on the first slide rails. The third drive assembly is adapted to drive the clamps to move along the extension direction of the first slide rails. Multiple second slide rails are staggered with multiple first slide rails along the circumferential direction of the first holding cavity, and each of the multiple second slide rails corresponds one-to-one with a multiple of the spare position seed crystals. The second drive assembly and the spare position seed crystals are disposed on the second slide rails. The upper side of the second slide rail is provided with a slide groove, which extends along the radial direction of the second slide rail. The clamping member is disposed in the slide groove, and the axial thickness of the slide groove is the same as the axial thickness of the clamping member. In the vertical direction, the top surface of the clamping member is flush with the bottom surface of the third drive assembly, or the top surface of the clamping member is lower than the bottom surface of the third drive assembly.

10. A method for controlling a seed crystal chuck, characterized in that, The seed crystal chuck is the seed crystal chuck according to any one of claims 1-9, and the growth site seed crystal has multiple long crystal segments arranged sequentially along the length direction, the multiple long crystal segments including a first long crystal segment and a second long crystal segment, the first long crystal segment being connected to the lower side of the second long crystal segment. The control method includes the following steps: S1. The first crystal growth segment extends through the through-hole, and after being used for a single crystal growth, it is determined whether the first crystal growth segment meets the first crystal growth condition. S2. If the condition is not met, the first long crystal segment is cut off, and the first driving component drives the growth seed crystal to move downward so that the second long crystal segment extends through the through-hole, so that the second long crystal segment is transformed into the first long crystal segment.

11. The method for controlling the seed crystal chuck according to claim 10, characterized in that, The first crystal growth condition is: A1 / A0 < first preset value. Where A0 is the surface area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth, and A1 is the oxidation area of ​​the peripheral sidewall of the first crystal growth segment after a single crystal growth.

12. The method for controlling the seed crystal chuck according to claim 11, characterized in that, Also includes: S3. After a single crystal growth, determine whether the first crystal growth segment meets the second crystal growth condition. The second crystal growth condition is: L≥L1, where L is the current length of the first crystal growth segment. S4. If the condition is not met, the first driving component drives the growth seed crystal to move downwards so that the second long crystal segment extends out through the port.

13. The method for controlling the seed crystal chuck according to claim 12, characterized in that, Step S1 includes: S11. Before the single crystal growth, obtain an image of the peripheral sidewall of the first crystal growth segment; S12. After a single crystal growth, acquire an image of the peripheral sidewall of the first crystal growth segment again; S13. Calculate A0 and A1 based on the image obtained in step S12 to determine whether the first crystal growth condition is met. S14. Compare the image obtained in step S12 with the image obtained in step S11. Use the known actual axial dimension of the first crystal growth segment before crystal growth and the image size to obtain the image ratio. Calculate L based on the image ratio and the image size of the first crystal growth segment after crystal growth, so as to determine in step S3 whether the first crystal growth segment meets the second crystal growth condition.

14. The method for controlling the seed crystal chuck according to claim 12, characterized in that, The control method further includes: S5. Repeat steps S1, S2, S3 and S4 until the last segment of the growth seed crystal does not meet the first growth condition or the second growth condition, and the growth seed crystal is removed from the first holding cavity from the opening. S6. The second driving component drives the spare seed crystal to move to the first holding cavity, so that the spare seed crystal is transformed into the growth seed crystal, and steps S1, S2, S3 and S4 are repeated.

15. A crystal growth furnace, characterized in that, Includes the seed crystal chuck according to any one of claims 1-9.

Images