Semiconductor device and method of forming the same
By combining high-angle and low-angle ion beam etching processes to protect the magnetic tunnel junction sidewalls of MRAM devices, the problem of etching damage was solved, and the performance and reliability of MRAM devices were improved.
CN115884660BActive Publication Date: 2026-06-26TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-07-12
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
In the fabrication of magnetoresistive random access memory (MRAM) devices, the etching process in the prior art is prone to damaging the sidewalls of the magnetic tunnel junction (MTJ), leading to device defects and performance degradation.
Method used
A combination of high-angle and low-angle ion beam etching processes is used to first etch through the tunnel barrier layer, then protect the sidewalls of the MTJ with a spacer layer to avoid damage, and repair the damage after etching to reduce the risk of short circuits.
Benefits of technology
This improved the magnetism and performance of MRAM devices, reduced device defects, and enhanced the reliability and efficiency of the fabrication process.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115884660B_ABST
Abstract
Embodiments of the invention disclose semiconductor devices and methods of forming the same. Improved methods for patterning magnetic tunnel junctions (MTJs) for magnetoresistive random access memory (MRAM) and semiconductor devices formed thereby are disclosed. In one embodiment, a method includes depositing a bottom electrode layer over a semiconductor substrate; depositing a MTJ film stack over the bottom electrode layer; depositing a top electrode layer over the MTJ film stack; patterning the top electrode layer; performing a first etch process to pattern the MTJ film stack; performing a first trimming process on the MTJ film stack; after performing the first trimming process, depositing a first spacer layer over the MTJ stack; and after depositing the first spacer layer, performing a second etch process to pattern the first spacer layer, the MTJ film stack, and the bottom electrode layer to form an MRAM cell.
Need to check novelty before this filing date? Find Prior Art