Substrate processing apparatus

Abstract

A substrate processing apparatus is provided. In a substrate holding section, a gas supply section supplies gas between a lower surface of a substrate and a base surface of a base section, and forms a gas flow that tends to go outward in a radial direction. A partition plate is disposed on the base surface of the base section at a radially outer side compared with an outer periphery of the substrate, and surrounds a periphery of the substrate. An inner periphery of the partition plate and the outer periphery of the substrate are separated from each other in the radial direction and are opposed to each other. An upper surface of the partition plate is located at the same position in a vertical direction as an upper surface of the substrate, or is located at a lower side compared with the upper surface of the substrate. An annular flow path is provided between a lower surface of the partition plate and the base surface of the base section. The partition plate is fixed to the base section, and is rotated together with the base section by a substrate rotating mechanism. Thus, it is possible to suppress processing liquid supplied to the upper surface of the substrate from adhering to the lower surface of the substrate.

Description

[0001] [Refer to related applications]

[0002] This application claims the benefit of priority to Japanese Patent Application JP2021-154038, filed on September 22, 2021, all disclosures of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus for processing substrates. Background Technology

[0004] In the past, various treatments were performed on the semiconductor substrate (hereinafter referred to as "substrate") during the manufacturing process. For example, a substrate held horizontally by a substrate holder was rotated, and a treatment liquid was supplied to the surface of the rotating substrate, thereby performing liquid treatment on the substrate.

[0005] In the wet etching apparatus disclosed in JP Patent Application Publication No. 2009-142818 (Document 1), a Bernoulli chuck is used as the substrate holding part to supply high-pressure gas between a support located below the substrate and the substrate, and to attract the substrate toward the support by the negative pressure generated by the gas flowing along the lower surface of the substrate. The gas is supplied to the space between the substrate and the support through an annular nozzle formed on the upper surface of the support below the outer periphery of the substrate. The support has an annular gas discharge section that extends radially outward from the annular nozzle toward the outer periphery of the substrate and separates downward from the substrate. Below the gas discharge section is an annular gas discharge path extending radially outward and downward from the aforementioned annular nozzle.

[0006] In this wet etching apparatus, etching solution supplied to the upper surface of the substrate flows from the outer periphery of the substrate down to the lower surface, filling the gap between the periphery of the lower surface of the substrate and the upper surface of the gas exhaust section of the support. This etches the periphery of the lower surface of the substrate. The etching solution flowing to the lower surface of the substrate is discharged radially outward through the gas exhaust path. Additionally, gas supplied from an annular nozzle to the space between the substrate and the support is also discharged radially outward through the same gas exhaust path.

[0007] Furthermore, in liquid processing relative to the substrate, unlike the etching process in Document 1, there is a need to prevent the processing liquid supplied to the upper surface of the substrate from flowing around to the lower surface of the substrate. Then, in the case of holding the substrate using a Bernoulli chuck as in Document 1, there is a concern that the negative pressure generated between the substrate and the support might attract processing liquid supplied to the upper surface of the substrate and flowing down from the outer periphery of the substrate, causing the processing liquid to flow around to the lower surface of the substrate. Additionally, in the substrate holding section, if a protrusion such as a centering pin is provided on the outer side compared to the outer periphery of the substrate, there is a concern that processing liquid flying off from the rotating substrate might collide with this protrusion, causing droplets or mist generated by the collision to flow around to the lower surface of the substrate and adhere to it. Summary of the Invention

[0008] The present invention relates to a substrate processing apparatus for processing substrates, the purpose of which is to suppress the adhesion of processing liquid to the lower surface of the substrate.

[0009] A preferred aspect of the substrate processing apparatus of the present invention includes: a substrate holding portion for holding a substrate in a horizontal state; a substrate rotating mechanism for rotating the substrate holding portion about a central axis extending in a vertical direction; and a processing liquid supply portion for supplying processing liquid relative to the upper surface of the substrate. The substrate holding portion includes: a base having a base surface opposite to the lower surface of the substrate and extending radially outward from the outer periphery of the substrate; a plurality of support pins arranged circumferentially on the base surface and protruding upward from the base surface, contacting the outer periphery of the lower surface of the substrate; a gas supply portion for supplying gas between the lower surface of the substrate and the base surface of the base to form a radially outward airflow; and an annular partition plate disposed radially outward from the outer periphery of the substrate on the base surface of the base portion, surrounding the periphery of the substrate. The inner periphery of the partition plate is radially separated from and opposite to the outer periphery of the substrate. The upper surface of the partition plate is located at the same position as the upper surface of the substrate in the vertical direction or is located below the upper surface of the substrate. An annular flow path is provided between the lower surface of the partition plate and the base surface of the base. The partition plate is fixed to the base and rotates together with the base using the substrate rotation mechanism.

[0010] According to this substrate processing apparatus, it is possible to suppress the adhesion of processing liquid to the lower surface of the substrate.

[0011] Preferably, the substrate holding portion adsorbs the substrate by generating a pressure drop in the space between the substrate and the base due to the Bernoulli effect caused by the airflow.

[0012] Preferably, the lower surface of the partition plate is an inclined surface that tends to slope downwards as it moves radially outwards.

[0013] Preferably, the vertical distance between the lower surface of the substrate and the base surface at the radial position where the substrate contacts the plurality of support pins is smaller than the vertical distance between the lower surface of the partition plate and the base surface located below the inner periphery of the partition plate.

[0014] Preferably, the substrate holding portion further includes a pin protruding upward from the base surface at a position radially outward compared to the substrate. The upper end of the pin is inserted into an opening provided in the partition plate. The upper end of the pin is located at the same position in the vertical direction as the area surrounding the opening in the upper surface of the partition plate or is located on the lower side compared to the area.

[0015] The above-mentioned objectives, as well as their objectives, features, aspects, and advantages, will become clear from the following detailed description of the invention with reference to the accompanying drawings. Attached Figure Description

[0016] Figure 1 This is a top view illustrating a substrate processing system according to one embodiment.

[0017] Figure 2 This is a side view showing the configuration of the substrate processing apparatus.

[0018] Figure 3 This is a diagram showing the structure of the control unit.

[0019] Figure 4 This is a top view showing the substrate holding section.

[0020] Figure 5 This is a cross-sectional view showing a portion of the substrate holding section.

[0021] Figure 6 This is a cross-sectional view showing a portion of the substrate holding section.

[0022] Figure 7 It is a block diagram used to illustrate the composition of the gas and liquid supply.

[0023] Figure 8 This is a top view showing the substrate.

[0024] Figure 9 This is a cross-sectional view showing the substrate.

[0025] Figure 10 This is a diagram showing the process of processing relative to the substrate.

[0026] Explanation of reference numerals in the attached figures

[0027] 1. Substrate processing apparatus

[0028] 2. Substrate holding section

[0029] 9 substrates

[0030] 21 base

[0031] 22 support pins

[0032] 23 Gas Supply Department

[0033] 25 reassuring pins

[0034] 26 partitions

[0035] 33 substrate rotation mechanism

[0036] 51 Processing Department

[0037] Space below 90

[0038] 91 (substrate) upper surface

[0039] 92 (substrate) lower surface

[0040] 211 base

[0041] 252 upper part

[0042] 261 (the upper surface of the partition)

[0043] 262 (the lower surface of the partition)

[0044] 264 Circular Flow Path

[0045] 265 opening

[0046] J1 central axis Detailed Implementation

[0047] Figure 1 This is an illustrative top view showing the layout of a substrate processing system 10 with a substrate processing apparatus according to an embodiment of the present invention. The substrate processing system 10 is a system for processing a semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"). The substrate processing system 10 includes a transfer block 101 and a processing block 102 coupled to the transfer block 101.

[0048] The transfer block 101 includes a carrier holding section 104, a transfer robot 105, and an IR moving mechanism 106. The carrier holding section 104 holds multiple carriers 107 capable of accommodating multiple substrates 9. The multiple carriers 107 (e.g., FOUP) are held by the carrier holding section 104 in a predetermined carrier arrangement direction. The IR moving mechanism 106 moves the transfer robot 105 in the carrier arrangement direction. The transfer robot 105 performs a removal operation to take the substrate 9 out of the carrier 107 and a loading operation to move the substrate 9 into the carrier 107 held by the carrier holding section 104. The substrate 9 is transported in a horizontal position by the transfer robot 105.

[0049] Processing block 102 includes multiple (e.g., four or more) processing units 108 for processing substrate 9, and a central robot 109. The multiple processing units 108 are arranged to surround the central robot 109 in a top view. Various processes are performed on the substrate 9 within the multiple processing units 108. The substrate processing apparatus described later is one of the multiple processing units 108. The central robot 109 performs a loading action to load the substrate 9 into the processing units 108 and a unloading action to unload the substrate 9 from the processing units 108. Furthermore, the central robot 109 transports the substrate 9 between the multiple processing units 108. The substrate 9 is transported horizontally by the central robot 109. The central robot 109 receives the substrate 9 from the transfer robot 105 and delivers the substrate 9 to the transfer robot 105.

[0050] Figure 2 This is a side view showing the configuration of the substrate processing apparatus 1. Figure 2 The diagram shows a portion of the substrate processing apparatus 1 in cross-section. The substrate processing apparatus 1 is a single-sheet processing device that processes substrates 9 one by one. The substrate processing apparatus 1 supplies processing liquid to the substrates 9 for liquid processing. In this liquid processing, foreign matter adhering to the substrates 9 is removed (i.e., cleaned), for example, during processing before being transferred to the substrate processing apparatus 1. This foreign matter is, for example, residue remaining on the surface of the substrates 9 during a polishing process. In the following description, it will also be... Figure 2 The upper and lower sides are simply referred to as the "upper side" and the "lower side".

[0051] The substrate processing apparatus 1 includes a substrate holding section 2, a substrate rotating mechanism 33, a cup section 4, a processing section 51, a processing section moving mechanism 52, a control section 8, and a chamber 11. The substrate holding section 2, the substrate rotating mechanism 33, the cup section 4, and the processing section 51 are housed within the internal space of the chamber 11. An airflow forming section 12 is provided at the top of the chamber 11 to supply gas to the internal space and form a downward airflow (so-called a downflow). The airflow forming section 12 is, for example, an FFU (fan filter unit).

[0052] The control unit 8 is located outside the chamber 11 and controls the substrate holding unit 2, the substrate rotation mechanism 33, the processing unit 51, and the processing unit moving mechanism 52. For example... Figure 3As shown, the control unit 8 is, for example, a typical computer system including a processor 81, a memory 82, an input / output unit 83, and a bus 84. The bus 84 is a signal circuit connecting the processor 81, the memory 82, and the input / output unit 83. The memory 82 stores programs and various information. The processor 81 performs various processes (e.g., numerical calculations) using the memory 82 and other memory according to the programs stored in the memory 82. The input / output unit 83 includes a keyboard 85 and a mouse 86 for accepting input from the operator, a display 87 for displaying output from the processor 81, and a transmitter (not shown) for sending output from the processor 81. Furthermore, the control unit 8 can be a programmable logic controller (PLC) or a circuit board. The control unit 8 can include any combination of computer systems, PLCs, and circuit boards.

[0053] The substrate holding section 2 and the substrate rotating mechanism 33 are both parts of a rotary chuck that holds and rotates a generally circular substrate 9. The substrate holding section 2 holds the substrate 9 in a horizontal position from below. The substrate holding section 2 is, for example, a Bernoulli chuck that uses the Bernoulli effect to attract and hold the substrate 9. Alternatively, the substrate holding section 2 may be a chuck with other structures.

[0054] Figure 4 This is a top view showing the substrate holding part 2. Figure 5 Is Figure 4 The cross-sectional view showing the position of VV in the diagram, which cuts off the substrate holding part 2. Figure 6 Is Figure 4 The cross-sectional view showing the substrate holding part 2 being cut off at position I of VI-V. Figure 5 as well as Figure 6 In the image, the substrate 9 held by the substrate holding part 2 is shown with a two-dotted line. (Example) Figures 4-6 As shown, the substrate holding part 2 includes a base 21, a plurality of support pins 22, and a gas supply part 23.

[0055] The base 21 is a generally circular plate-shaped component centered on a central axis J1 extending in the vertical direction. The substrate 9 is separated from the base 21 and disposed above the base 21. The upper main surface 211 (hereinafter also referred to as "base surface 211") of the base 21 is positioned downwardly separated from the lower main surface (hereinafter also referred to as "lower surface 92") of the substrate 9, and is vertically opposed to the lower surface 92 of the substrate 9. The base surface 211 of the base 21 and the lower surface 92 of the substrate 9 are generally horizontal. The diameter of the base 21 is slightly larger than the diameter of the substrate 9, and the base surface 211 extends radially outward along the entire circumference of the substrate 9.

[0056] Multiple support pins 22 are arranged separately from each other on the outer periphery of the base surface 211 of the base 21 in a circumferential direction (hereinafter also referred to as "circumferential direction") centered on the central axis J1. The multiple support pins 22 are arranged on the same circumference centered on the central axis J1. The multiple support pins 22 are arranged, for example, at approximately equal angular intervals in the circumferential direction. Figure 4 In the example shown, there are 30 support pins 22. Each support pin 22 is a protrusion extending upwards from the base surface 211. Each support pin 22 is, for example, approximately hemispherical in shape. The support pins 22 are fixed to the base 21 and do not move relative to the base 21. In the substrate holding portion 2, the support pins 22 contact the outer periphery of the lower surface 92 of the substrate 9, supporting the substrate 9 from below. Thus, the substrate holding portion 2, by contacting the outer periphery of the substrate 9 with the support pins 22, holds the substrate 9 in a substantially horizontal state without contacting the center of the lower surface 92 of the substrate 9.

[0057] The gas supply section 23 includes a plurality of gas outlets 232 provided on the base surface 211 of the base 21. Viewed from above, the plurality of gas outlets 232 are arranged separately from the lower surface 92 of the substrate 9 at a position overlapping with the substrate 9. The plurality of gas outlets 232 are arranged separately from each other in the circumferential direction at a position separated radially outward from the central axis J1. The plurality of gas outlets 232 are arranged on the same circumference centered on the central axis J1. The number of the plurality of gas outlets 232 is, for example, 150. The plurality of gas outlets 232 are arranged radially inward compared to the plurality of support pins 22. The plurality of gas outlets 232 are arranged below the outer periphery of the substrate 9. Figure 5 as well as Figure 6 In the example shown, the gas outlet 232 is located on the radially inner side of a generally V-shaped, i.e., annular groove formed on the longitudinal section of the base surface 211. The shape of the gas outlet 232, when viewed from a direction perpendicular to this side, is, for example, generally circular. Each gas outlet 232 is connected to the gas supply source 235 (see reference 235) described later via a gas flow path 231 located inside the base 21. Figure 7 ).

[0058] In the gas supply section 23, gas is supplied from multiple gas outlets 232 to the space between the lower surface 92 of the substrate 9 and the base surface 211 of the base 21 (hereinafter also referred to as "lower space 90"). This gas is, for example, an inert gas such as nitrogen or air. This gas is, for example, a high-pressure gas or a compressed gas. The gas supplied from the multiple gas outlets 232 to the lower space 90 flows radially outward along the lower surface 92 of the substrate 9. As a result, an airflow is formed in the lower space 90 that tends towards the radially outward from the radial center (hereinafter also referred to as "center"), and a pressure drop is generated in the lower space 90 due to the Bernoulli effect produced by this airflow. As a result, the substrate 9 is adsorbed onto the substrate holding section 2. In other words, the air pressure in the lower space 90 becomes lower than the air pressure above the substrate 9 (i.e., becomes a negative pressure), and the pressure difference between the upper and lower parts presses the substrate 9 against the multiple support pins 22 of the substrate holding section 2, thereby fixing (i.e., holding) the position of the substrate 9. With the substrate 9 held in the substrate holding part 2, the base 21 and the plurality of gas outlets 232 separate downward from the substrate 9 and do not contact the substrate 9.

[0059] exist Figure 5 as well as Figure 6 In the example shown, the portion of the gas flow path 231 located inside the base 21 near the gas outlet 232 extends radially outward and upward toward the gas outlet 232. Therefore, the gas supplied from the gas outlet 232 to the lower space 90 flows radially outward and upward from the gas outlet 232, flowing approximately horizontally radially outward along the lower surface 92 of the substrate 9. Thus, an airflow from the center outward is formed in the lower space 90, and the substrate 9, supported from below by the multiple support pins 22, is drawn downward by the Bernoulli effect and held by the substrate holding portion 2.

[0060] In the substrate holding section 2, when the flow rate of the gas supplied from the multiple gas outlets 232 increases, the downward attractive force acting on the substrate 9 increases. Furthermore, when the substrate 9 is not adsorbed to the substrate holding section 2, the substrate 9 can easily separate upward from the multiple support pins 22, and can also move approximately horizontally while in contact with the multiple support pins 22 (i.e., slide laterally on the multiple support pins 22).

[0061] like Figure 4 as well as Figure 6 As shown, the substrate holding part 2 also includes a plurality of lifting pins 24 and a plurality of centering pins 25. The plurality of lifting pins 24 transfer the substrate 9 between the plurality of support pins 22 when the substrate 9 is moved in or out relative to the substrate processing apparatus 1. The plurality of centering pins 25 adjust the horizontal position of the substrate 9 by pressing the outer periphery of the substrate 9, which is placed on the plurality of support pins 22 and is in a non-adhesive state, in the horizontal direction.

[0062] Multiple lifting pins 24 are arranged circumferentially separated from each other on the outer periphery of the base surface 211 of the base 21. The multiple lifting pins 24 are configured on the same circumference centered on the central axis J1. The multiple lifting pins 24 are, for example, arranged at approximately equal angular intervals in the circumferential direction. Figure 4 In the example shown, there are six lifting pins 24. The lifting pins 24 are located slightly radially outward compared to the support pins 22. The lifting pins 24 protrude upward from the base surface 211. Each lifting pin 24 is, for example, generally cylindrical. At the upper part of the lifting pin 24, a radially inward portion is cut out, and this upper part contacts the lower surface 92 of the substrate 9 and its outer periphery (i.e., side surface). That is, the radially outward portions of the lifting pins 24 are located radially outward compared to the outer periphery of the substrate 9.

[0063] Multiple lifting pins 24 are movable relative to the base surface 211 of the base 21 in the vertical direction. The multiple lifting pins 24 receive and hold the substrate 9 on the upper side compared to the multiple support pins 22. Then, by lowering the multiple lifting pins 24 together with the substrate 9, the substrate 9 is transferred to the multiple support pins 22. Alternatively, by raising the multiple lifting pins 24 from the lower side compared to the multiple support pins 22 to hold the substrate 9, and further raising them, the substrate 9 is transferred from the multiple support pins 22 to the multiple lifting pins 24.

[0064] Multiple centering pins 25 are arranged circumferentially separated from each other on the outer periphery of the base surface 211 of the base 21. The multiple centering pins 25 are configured on the same circumference centered on the central axis J1. The multiple centering pins 25 are, for example, arranged at approximately equal angular intervals in the circumferential direction. Figure 4 In the example shown, there are six centering pins 25. These centering pins 25 are located slightly radially outward compared to the support pins 22 and the lifting pins 24. Furthermore, these centering pins 25 are located radially outward compared to the outer periphery of the substrate 9. Each centering pin 25 is a pin protruding upward from the base surface 211.

[0065] exist Figure 6 In the example shown, the centering pin 25 has a generally cylindrical lower pin portion 251 and a generally cylindrical upper pin portion 252 protruding upward from the upper end of the lower pin portion 251. The upper pin portion 252 is thinner than the lower pin portion 251 (i.e., its diameter in a cross-section perpendicular to the vertical direction is smaller) and is fixed to the lower pin portion 251 at a radially eccentric position from the central axis J2 of the lower pin portion 251. The lower pin portion 251 is located below the lower surface 92 of the substrate 9 in the vertical direction. The upper pin portion 252 is located at approximately the same position as the substrate 9 in the vertical direction. The lower pin portion 251 and the upper pin portion 252 are located radially outward from the outer periphery of the substrate 9. The radially inner portion of the lower pin portion 251 overlaps with the substrate 9 when viewed from above. The upper pin portion 252 is radially separated from the outer periphery of the substrate 9 and is radially opposite to the outer periphery.

[0066] The lower portion 251 of each centering pin 25 is connected to the pin rotation mechanism 254 via a shaft 253 that passes through the base 21 in the vertical direction. The pin rotation mechanism 254 is, for example, an electric rotary motor. By rotating the shaft 253 using the pin rotation mechanism 254, the centering pin 25 rotates about the central axis J2 extending in the vertical direction on the base surface 211 of the base 21. As a result, the radial position of the upper portion 252 of the pin changes. In the substrate holding portion 2, the plurality of centering pins 25 rotate in a state where the upper portion 252 of the pin is in contact with the outer periphery of the substrate 9, thereby causing the substrate 9 to slide horizontally on the plurality of support pins 22, adjusting the horizontal position of the substrate 9.

[0067] like Figures 4-6 As shown, the substrate holding portion 2 also includes a partition plate 26. The partition plate 26 is a generally annular member centered on the central axis J1, surrounding the entire circumference of the substrate 9. The partition plate 26 is disposed radially outward compared to the outer periphery of the substrate 9 and is fixed to the base surface 211 of the base portion 21. The inner periphery of the partition plate 26 is located radially outward compared to the outer periphery of the substrate 9. In plan view, a generally annular gap 263 is provided between the inner periphery of the partition plate 26 and the outer periphery of the substrate 9. The radial width of the annular gap 263 is, for example, 1 mm or more and 2 mm or less.

[0068] The inner periphery of the partition plate 26 and the outer periphery of the substrate 9 are located at approximately the same position in the vertical direction. That is, the inner periphery of the partition plate 26 and the outer periphery of the substrate 9 are radially separated from each other. The upper surface 261 of the partition plate 26 is located at the same position in the vertical direction as the upper main surface (hereinafter also referred to as "upper surface 91") of the substrate 9, or is slightly lower than the upper surface 91 of the substrate 9. The upper surface 261 of the partition plate 26 extends radially outward and approximately horizontally from the inner periphery of the partition plate 26, and further extends radially outward and downward to reach the outer periphery of the partition plate 26. The outer periphery of the partition plate 26 substantially overlaps with the outer periphery of the base 21 (i.e., the outer periphery of the base surface 211) in plan view.

[0069] The partition plate 26 is positioned upwards from the base surface 211 of the base 21 and is fixed to the base surface 211 of the base 21 via a plurality of partition plate supports 212. Each partition plate support 212 is, for example, a generally cylindrical member protruding upwards from the base surface 211, connected to the lower surface 262 of the partition plate 26, and supporting the partition plate 26 from below. The plurality of partition plate supports 212 are arranged circumferentially separated from each other on the outer periphery of the base surface 211 of the base 21. The plurality of partition plate supports 212 are, for example, arranged on the same circumference centered on the central axis J1. The plurality of partition plate supports 212 are, for example, arranged at approximately equal angular intervals in the circumferential direction. The number of the plurality of partition plate supports 212 is, for example, six. The plurality of partition plate supports 212 are, for example, arranged in approximately the same position in the circumferential direction as the plurality of centering pins 25. The circumferential position of the partition plate supports 212 does not necessarily have to be the same as the circumferential position of the centering pins 25 and can be appropriately changed. A generally annular gap (hereinafter also referred to as "annular flow path 264") is provided between the lower surface 262 of the partition plate 26 and the base surface 211 of the base 21.

[0070] exist Figure 5 In the example shown, the base surface 211 of the base 21 extends radially outward in a generally horizontal manner from the central axis J1, and becomes an inclined surface extending radially outward and downward at the location where multiple gas outlets 232 are provided. The base surface 211 extends radially outward and upward from the lower end of this inclined surface, and extends radially outward in a generally horizontal manner at the location where the support pin 22 is provided. The base surface 211 becomes an inclined surface extending radially outward and downward radially outside the support pin 22. This inclined surface is a surface that rapidly tends downward as it moves radially outward, located approximately vertically below the outer periphery of the substrate 9. The base surface 211 is a horizontal surface extending radially outward in a generally horizontal manner from the lower end of this inclined surface, and is vertically opposed to the lower surface 262 of the annular gap 263 and the partition plate 26 at the location where it separates downward from the annular gap 263 and the partition plate 26. The base surface 211 is an inclined surface that extends radially outward and downward from the radially outer end of the horizontal plane to the outer periphery of the base 21.

[0071] The lower surface 262 of the partition plate 26 extends radially outward and downward from its inner periphery to its outer periphery. In other words, the lower surface 262 of the partition plate 26 is an inclined surface that slopes downward as it moves radially outward. Figure 5In the example shown, the lower surface 262 of the partition plate 26 extends radially outward and downward from the inner periphery of the partition plate 26, extends radially downward at the radial center of the partition plate 26, and extends radially outward and downward to the outer periphery of the partition plate 26. The vertical height of the annular flow path 264 (i.e., the vertical distance between the base surface 211 and the lower surface 262 of the partition plate 26) is approximately fixed between the inner periphery and the radial center of the partition plate 26, decreases rapidly at the radial center of the partition plate 26, and is approximately fixed between the radial center and the outer periphery of the partition plate 26.

[0072] exist Figure 5 In the example shown, the vertical height of the space 90 below the radial position where the substrate 9 contacts the plurality of support pins 22 (i.e., the vertical distance between the base surface 211 and the lower surface 262 of the substrate 9) is smaller than the vertical height of the annular flow path 264 at the inner periphery of the partition plate 26. Thus, the base surface 211 has a steep inclined surface 213 located approximately vertically below the outer periphery of the substrate 9, so the vertical height of the space 90 increases rapidly below the outer periphery of the substrate 9, becoming continuous with the annular flow path 264. In other words, the vertical height of the space 90 increases rapidly in the vertical direction compared to the plurality of support pins 22 and in the radially inner side of the inner periphery of the partition plate 26 (i.e., near the annular gap 263), becoming continuous with the annular flow path 264. Furthermore, the inclined surface 213 may be located radially outward compared to the plurality of support pins 22 and radially inward compared to the outer periphery of the substrate 9.

[0073] like Figure 4 As shown, on the inner periphery of the partition plate 26, a generally semi-circular opening 265 (i.e., a notch) is formed near each centering pin 25, and the centering pin 25 is arranged to fit into the opening 265. Figure 6 In the example shown, the upper end of the centering pin 25 is inserted into the opening 265 of the partition plate 26. The upper end of the centering pin 25 is located at approximately the same position vertically as the area surrounding the opening 265 on the upper surface 261 of the partition plate 26. The upper end of the centering pin 25 may also be located below the area surrounding the opening 265 on the upper surface 261 of the partition plate 26.

[0074] Figure 2The substrate rotation mechanism 33 shown is positioned below the substrate holding portion 2. The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding portion 2 around a central axis J1. The substrate rotation mechanism 33 includes a shaft 331 and a motor 332. The shaft 331 is a generally cylindrical member centered on the central axis J1. The shaft 331 extends vertically and is connected to the center of the lower surface of the base 21 of the substrate holding portion 2. The motor 332 is an electric rotary motor that rotates the shaft 331. Rotation of the shaft 331 by the motor 332 causes the base 21 connected to the shaft 331 and the partition plate 26 fixed to the base 21 to rotate together. Alternatively, the substrate rotation mechanism 33 may include a motor with other configurations (e.g., a hollow motor).

[0075] The cup portion 4 has an annular cup 41 centered on the central axis J1. The cup 41 is arranged around the entire circumference of the substrate 9 and the substrate holding portion 2, covering the sides of the substrate 9 and the substrate holding portion 2. The cup 41 is a liquid receiving container for receiving liquids such as processing liquid that are scattered from the rotating substrate 9. The cup 41 remains stationary in the circumferential direction and does not rotate, regardless of the rotation or rest of the substrate holding portion 2. A drain port (not shown) is provided at the bottom of the cup 41 for discharging the processing liquid or the like received by the cup 41 to the outside of the chamber 11.

[0076] The cup 41 moves vertically using a lifting mechanism (not shown in the diagram). This lifting mechanism may include, for example, an electric linear motor, a cylinder, a ball screw, or an electric rotary motor. The cup section 4 may also have multiple cups 41 stacked radially. When the cup section 4 has multiple cups 41, each cup 41 can move independently in the vertical direction, and the multiple cups 41 can be used to receive the processing liquid depending on the type of processing liquid that is sprayed from the substrate 9.

[0077] Figure 2 The processing unit 51 shown is a processing liquid supply unit that supplies processing liquid (e.g., cleaning liquid) to the upper surface 91 of the substrate 9. The processing unit 51 includes an upper nozzle 511 that sprays the processing liquid toward the upper surface 91 of the substrate 9. The upper nozzle 511 is, for example, a two-fluid nozzle that mixes the processing liquid and a gas to spray the processing liquid toward the upper surface 91 of the substrate 9. In the processing unit 51, the processing liquid is atomized by colliding with a high-speed airflow and sprayed at high speed toward the upper surface 91 of the substrate 9. This physically cleans the upper surface 91 of the substrate 9, removing foreign matter adhering to it. The processing liquid is, for example, DIW or CO2 water. The gas is, for example, an inert gas such as nitrogen or air. The gas is, for example, a high-pressure gas or a compressed gas.

[0078] The processing unit moving mechanism 52 is a rocking mechanism that rocks the upper nozzle 511 of the processing unit 51 approximately horizontally in the space above the substrate 9. The processing unit moving mechanism 52 includes an arm portion 521 and an arm rotation mechanism 522. The arm portion 521 is a rod-shaped member that extends approximately horizontally. The upper nozzle 511 is fixed to one end of the arm portion 521, and the other end is connected to the arm rotation mechanism 522 located radially outward of the cup portion 4. The arm rotation mechanism 522 rotates the arm portion 521 approximately horizontally about a rotation axis extending in the vertical direction.

[0079] The processing unit moving mechanism 52 reciprocates the upper nozzle 511, which sprays processing liquid relative to the rotating substrate 9, between a first position opposite to the center of the upper surface 91 of the substrate 9 in the vertical direction and a second position radially outward compared to the first position. The second position is preferably opposite to the outer periphery of the upper surface 91 of the substrate 9 in the vertical direction. This allows the aforementioned physical cleaning process to be performed on approximately the entire surface of the upper surface 91 of the substrate 9. When the cleaning process is complete, the processing unit moving mechanism 52 moves the processing unit 51 from the space above the substrate 9 to a retracted position radially outward compared to the outer periphery of the substrate 9. The arm rotation mechanism 522 of the processing unit moving mechanism 52 may include, for example, an electric rotary motor. Other configurations are also possible for the processing unit moving mechanism 52.

[0080] Figure 7 This is a block diagram illustrating the configuration of the gas and liquid supply in the substrate processing apparatus 1. Figure 7 In the middle, the various components are conceptually described, not necessarily related to... Figure 2 , Figures 4-6 The structure is consistent with that of the substrate processing apparatus 1 shown. The upper nozzle 511 is connected to the processing liquid supply source 515 via pipe 513 and valve 514. Additionally, the upper nozzle 511 is connected to the gas supply source 518 via pipe 516 and valve 517. In the processing unit 51, by utilizing the control unit 8 ( Figure 2 (Refer to) control to open valves 514 and 517, supplying the cleaning liquid and gas for cleaning the substrate 9 to the upper nozzle 511, which is a two-fluid nozzle, and spraying the atomized cleaning liquid from the upper nozzle 511 onto the upper surface 91 of the substrate 9.

[0081] The gas flow path 231 of the gas supply unit 23 is connected to the gas supply source 235 via a pipe 233 and a valve 234. In the substrate holding unit 2, the valve 234 is opened by the control unit 8 to supply the gas for adsorption of the substrate 9 to the gas flow path 231 and eject it from multiple gas outlets 232.

[0082] Furthermore, if the gas supplied to the upward nozzle 511 and the gas supplied to the gas flow path 231 of the substrate holding part 2 are of the same type, a single gas supply source can be used as both the gas supply source 518 and the gas supply source 235.

[0083] Figure 8 This is a top view showing an example of a substrate 9 processed by the substrate processing apparatus 1. Figure 9 It is at position IX-IX Figure 8 A cross-sectional view of substrate 9 cut off. Figure 9 In the figure, the thickness of the substrate 9 is depicted more closely than the actual thickness. Figure 8 as well as Figure 9 The illustrated substrate 9 has a peripheral portion 94 and a main portion 95. Figure 8 In the diagram, the boundary between the peripheral portion 94 and the main portion 95 is indicated by a thin line. The peripheral portion 94 is a generally annular portion that includes the outer periphery of the substrate 9 and is viewed from above. The main portion 95 is a generally circular portion located radially inward of the peripheral portion 94. The main portion 95 extends radially inward from the inner periphery of the peripheral portion 94. The main portion 95 is completely surrounded by the peripheral portion 94. For example, the diameter of the substrate 9 is 300 mm, the diameter of the main portion 95 is 290 mm to 296 mm, and the radial width of the peripheral portion 94 is 2 mm to 5 mm.

[0084] The upper surface 91 of the substrate 9 is recessed downward in the main portion 95 compared to the peripheral portion 94. The lower surface 92 of the substrate 9 is located at approximately the same position in the vertical direction in both the main portion 95 and the peripheral portion 94. That is, the space above the main portion 95 in the substrate 9 is a recess. The thickness of the substrate 9 in the main portion 95 is, for example, 200 μm or less. That is, the substrate 9 is a thin substrate with a radial central thickness of 200 μm or less. The thickness of the substrate 9 in the main portion 95 is, for example, 10 μm or more and 200 μm or less. The thickness of the substrate 9 in the peripheral portion 94 is, for example, 600 μm or more and 1000 μm or less. The substrate 9 is formed, for example, by grinding (i.e., crushing) the portion corresponding to the main portion 95 relative to a substrate having a substantially uniform thickness.

[0085] Figure 10 This diagram illustrates the process flow of processing the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, firstly, the substrate 9 is formed by... Figure 2 The substrate holding section 2 shown is held (step S11). In this way, with the substrate holding section 2 in contact with the outer periphery of the lower surface 92 of the substrate 9 using multiple support pins 22 but not with the center of the lower surface 92 of the substrate 9, the substrate 9 is held in a horizontal state by the Bernoulli effect generated by the gas supplied from the gas supply section 23. In the substrate holding section 2, Figure 5The gas in the lower space 90 shown flows radially outward from below the outer periphery of the substrate 9, and flows into the annular flow path 264 from below the annular gap 263. Then, the gas flows radially outward within the annular flow path 264, flows radially outward from the outer periphery of the annular flow path 264 (i.e., the outer periphery of the substrate holding portion 2), and flows towards the cup portion 4 (see reference). Figure 2 (internal inflow).

[0086] like Figure 2 As shown, if the substrate 9 is held by the substrate holding part 2, the substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding part 2 around the central axis J1 (step S12). Then, the processing liquid is sprayed from the upper nozzle 511 relative to the upper surface 91 of the rotating substrate 9. The upper nozzle 511 moves back and forth between a first position opposite to the center of the upper surface 91 of the substrate 9 in the vertical direction and a second position located radially outward compared to the first position by the processing part moving mechanism 52. The second position is, for example, a position opposite to a virtual circumference in the vertical direction with a plurality of support pins 22 arranged thereon. Thus, a physical cleaning process is performed relative to the upper surface 91 of the substrate 9 (step S13).

[0087] The processing liquid supplied to the upper surface 91 of the rotating substrate 9 moves from the center of the substrate 9 toward the outer periphery due to centrifugal force. This processing liquid moves from the outer periphery of the substrate 9 above the annular gap 263 toward the upper part of the partition plate 26, and moves radially outward via or above the upper surface 261 of the partition plate 26. This suppresses the downward movement of the processing liquid compared to the lower surface 92 of the substrate 9, thus preventing the processing liquid from adhering to the lower surface 92 of the substrate 9. The processing liquid moving radially outward toward the partition plate 26 is scattered radially outward from the outer periphery of the partition plate 26 (i.e., the outer periphery of the substrate holding part 2) and is received by the cup part 4.

[0088] As described above, the substrate processing apparatus 1 includes a substrate holding section 2, a substrate rotation mechanism 33, and a processing liquid supply section (i.e., a processing section 51). The substrate holding section 2 holds the substrate 9 in a horizontal state. The substrate rotation mechanism 33 rotates the substrate holding section 2 about a central axis J1 extending in the vertical direction. The processing section 51 supplies processing liquid relative to the upper surface 91 of the substrate 9. The substrate holding section 2 has a base 21, a plurality of support pins 22, a gas supply section 23, and an annular partition plate 26. The base 21 has a base surface 211. The base surface 211 faces the lower surface 92 of the substrate 9 and extends radially outward from the outer periphery of the substrate 9. The plurality of support pins 22 are arranged circumferentially on the base surface 211 and protrude upward from the base surface 211. The plurality of support pins 22 contact the outer periphery of the lower surface 92 of the substrate 9. The gas supply section 23 delivers gas between the lower surface 92 of the substrate 9 and the base surface 211 of the base 21, forming an airflow that tends to move radially outward. The partition plate 26 is disposed radially outward on the base surface 211 of the base 21 compared to the outer periphery of the substrate 9, surrounding the periphery of the substrate 9.

[0089] The inner periphery of the partition plate 26 and the outer periphery of the substrate 9 are radially separated and opposite to each other. The upper surface 261 of the partition plate 26 is located at the same position as the upper surface 91 of the substrate 9 in the vertical direction, or is located below the upper surface 91 of the substrate 9. An annular flow path 264 is provided between the lower surface 262 of the partition plate 26 and the base surface 211 of the base 21. The partition plate 26 is fixed to the base 21 and rotates together with the base 21 via the substrate rotation mechanism 33.

[0090] Therefore, as described above, the gas flowing radially outward from the lower space 90 between the substrate 9 and the base 21 passes under the annular gap 263 and flows into the annular flow path 264, flowing radially outward. On the other hand, the processing liquid supplied to the upper surface 91 of the rotating substrate 9 passes over the annular gap 263 and moves over the partition plate 26, passing over the partition plate 26 and scattering radially outward. Therefore, it is possible to suppress the processing liquid on the upper surface 91 of the substrate 9 or the processing liquid scattering from the outer periphery of the substrate 9 from flowing around to the lower surface of the substrate 9, thereby preventing the processing liquid from adhering to the lower surface 92 of the substrate 9.

[0091] As described above, the substrate holding portion 2 preferably adsorbs the substrate 9 by creating a pressure drop in the space between the substrate 9 and the base 21 (i.e., the lower space 90) through the Bernoulli effect generated by the airflow. In this way, in the substrate processing apparatus 1 that uses a Bernoulli chuck to hold the substrate 9, the lower space 90 becomes a negative pressure, and therefore, the processing liquid is prone to flow back to the lower surface of the substrate 9 due to this negative pressure. As described above, the substrate processing apparatus 1 can suppress the flow of processing liquid back to the lower surface of the substrate 9; therefore, the structure of the substrate processing apparatus 1 is particularly suitable for use in substrate processing apparatuses equipped with a Bernoulli chuck.

[0092] As described above, the lower surface 262 of the partition plate 26 is preferably an inclined surface that tends downward as it moves radially outward. This allows gas flowing radially outward from the lower space 90 between the substrate 9 and the base 21 to be guided downward from near the outer periphery of the substrate 9. As a result, the adsorption force of the substrate 9 can be increased through the Bernoulli effect, thus firmly holding the substrate 9 in place.

[0093] As described above, the vertical distance between the lower surface 92 of the substrate 9 at the radial position where it contacts the plurality of support pins 22 and the base surface 211 is preferably smaller than the vertical distance between the lower surface 262 of the partition plate 26 located below the inner periphery of the partition plate 26 and the base surface 211. In this way, near the outer periphery of the substrate 9, the cross-sectional area of ​​the flow path for gas flowing radially outward from the lower space 90 between the substrate 9 and the base 21 is increased, thereby reducing the gas flow rate. Consequently, near the outer periphery of the substrate 9 (i.e., near the annular gap 263), the pressure drop caused by the gas flow can be suppressed. As a result, the suction of processing liquid passing above the annular gap 263 to the lower surface of the substrate 9 due to this pressure drop can be suppressed. Therefore, the adhesion of processing liquid to the lower surface 92 of the substrate 9 can be further suppressed.

[0094] As described above, the substrate holding portion 2 also includes a pin (in the above example, a centering pin 25) that protrudes upward from the base surface 211 radially outward compared to the substrate 9. The upper end of this pin is inserted into the opening 265 provided in the partition plate 26. Preferably, the upper end of the pin is located at the same position in the vertical direction as the area around the opening 265 in the upper surface 261 of the partition plate 26, or is located below that area. As a result, it is possible to suppress the collision between the processing liquid that is radially scattered outward from the outer periphery of the substrate 9 and the pin, and to cause the processing liquid to bounce radially inward (i.e., toward the substrate 9) by colliding with the pin. As a result, it is possible to further suppress the adhesion of processing liquid to the lower surface 92 of the substrate 9.

[0095] Various modifications can be made to the aforementioned substrate processing apparatus 1.

[0096] For example, the number and shape of the support pins 22 are not limited to the examples above, and various changes can be made. The same applies to the lifting pins 24 and the centering pins 25.

[0097] The upper ends of the plurality of centering pins 25 may be located on the upper side relative to the area surrounding the opening 265 in the upper surface 261 of the partition plate 26. In other words, the plurality of centering pins 25 may protrude upward from the upper surface 261 of the partition plate 26.

[0098] In the substrate holding section 2, the number, shape, and arrangement of the gas outlets 232 are not limited to the examples described above, and various modifications can be made. For example, the number of gas outlets 232 can be one. In this case, for example, a gas outlet 232 that is approximately circular in shape when viewed from above can be provided on the central axis J1 at a position opposite to the center of the lower surface 92 of the substrate 9 in the vertical direction, or a gas outlet 232 that is approximately annular in shape when viewed from above can be provided around the central axis J1.

[0099] In the substrate holding portion 2, the shape of the base surface 211 is not limited to the above example and can be modified in various ways. In addition, the shapes of the upper surface 261 and the lower surface 262 of the partition plate 26 are not limited to the above example and can be modified in various ways. For example, the lower surface 262 of the partition plate 26 does not necessarily have to be an inclined surface that tends to be downward as it tends to be radially outward, and can also be a surface that extends approximately horizontally.

[0100] The height of the space 90 below the radial position where the substrate 9 contacts the plurality of support pins 22 can be above the height of the annular flow path 264 below the inner periphery of the partition plate 26.

[0101] In the substrate processing apparatus 1, when a lower nozzle is provided at the center of the base 21 (i.e., below the center of the substrate 9), gas can flow into the lower space 90 at a small flow rate from the gap between the lower nozzle and the base 21 when a pressure drop occurs in the lower space 90 due to the Bernoulli effect.

[0102] In the substrate processing apparatus 1, the substrate holding section 2 is not necessarily limited to a Bernoulli chuck; for example, it can also be a mechanical chuck. In this case, for example, gas from the gas supply section 23 is supplied to the radial center of the lower space 90 for the purpose of purging the lower space 90 with the gas, forming an airflow that tends to move radially outward.

[0103] The substrate 9 processed in the substrate processing apparatus 1 does not necessarily have to be... Figure 8 as well as Figure 9This substrate, where the main portion 95 is thinner than the peripheral portion 94, can be, for example, a substrate with a thickness that is approximately uniform across almost the entire surface. Furthermore, the thickness, diameter, and shape of the substrate 9 can be varied in many ways.

[0104] In addition to semiconductor substrates, the substrate processing apparatus 1 can also be used to process glass substrates for flat panel displays such as liquid crystal displays or organic EL (electroluminescence) display devices, or glass substrates for other display devices. Furthermore, the substrate processing apparatus 1 can be used to process substrates for optical discs, magnetic disks, optical disc drives, photomasks, ceramic substrates, and solar cells.

[0105] The above-described embodiments and their variations can be appropriately combined as long as they do not contradict each other.

[0106] The present invention has been described and illustrated above, but the above description is illustrative and not limiting. Therefore, it can be said that various modifications or forms can be made without departing from the scope of the present invention.

Claims

1. A substrate processing apparatus that processes a substrate, the substrate processing apparatus characterized by comprising: a substrate holding portion that holds a substrate in a horizontal state; a substrate rotating mechanism that rotates the substrate holding portion about a central axis extending in a vertical direction; and a processing liquid supply portion that supplies a processing liquid with respect to an upper surface of the substrate, the substrate holding portion comprising: a base portion that has a base surface opposed to a lower surface of the substrate and extending radially outward from an outer periphery of the substrate; a plurality of support pins that are arranged in a circumferential direction on the base surface and protrude upward from the base surface to contact an outer peripheral portion of the lower surface of the substrate; a gas supply portion that supplies a gas between the lower surface of the substrate and the base surface of the base portion to form a gas flow that tends to be directed radially outward; and a ring-shaped partition plate that is disposed radially outward of the outer periphery of the substrate on the base surface of the base portion to surround a periphery of the substrate, an inner periphery of the partition plate is separated from and opposed to the outer periphery of the substrate in a radial direction, an upper surface of the partition plate is located at the same position in the vertical direction as the upper surface of the substrate or is located on a lower side than the upper surface of the substrate, a ring-shaped flow path is provided between a lower surface of the partition plate and the base surface of the base portion, the partition plate is fixed to the base portion and is rotated together with the base portion by the substrate rotating mechanism, the base surface has an inclined surface on a radially outer side than the plurality of support pins and on a radially inner side than the inner periphery of the partition plate, the inclined surface is located below the outer periphery of the substrate, and the inclined surface tends to be directed downward as it tends to be directed radially outward.

2. The substrate processing apparatus according to claim 1, wherein the substrate holding portion adsorbs the substrate by causing a pressure drop in a space between the substrate and the base portion by a Bernoulli effect generated by the gas flow.

3. The substrate processing apparatus according to claim 2, wherein the lower surface of the partition plate is an inclined surface that tends to be directed downward as it tends to be directed radially outward.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein a distance in the vertical direction between the lower surface of the substrate and the base surface at a position in the radial direction at which the substrate is in contact with the plurality of support pins is smaller than a distance in the vertical direction between the lower surface of the partition plate and the base surface below the inner periphery of the partition plate.

5. The substrate processing apparatus according to any one of claims 1 to 3, wherein the substrate holding portion further comprises a pin protruding upward from the base surface at a position radially outward of the substrate, an upper end portion of the pin is inserted into an opening portion provided in the partition plate, and an upper end of the pin and a region around the opening portion in the upper surface of the partition plate are located at the same position in the vertical direction or are located on a lower side than the region. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​

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