Multi charged particle beam drawing apparatus and multi charged particle beam drawing method

Abstract

A multi-beam drawing apparatus according to one embodiment of the present application includes: a beam forming mechanism that forms a multi-beam; a block region generating circuit that generates a plurality of block regions from an irradiation region of the multi-beam formed by combining each small region surrounded between each beam of the multi-beam and other beams adjacent thereto; and a drawing mechanism that draws a sample using the multi-beam in a manner that at least each block region is irradiated by each drawing process of a plurality of drawing processes and each drawing process of the plurality of drawing processes uses one of the plurality of block regions to non-repeatedly cover an irradiation region of the sample by irradiation of the block region.

Description

TECHNICAL FIELD

[0001] This application is based on JP 2020-134199 (Application No.) filed in Japan on August 6, 2020, which is incorporated herein by reference in its entirety. The contents described in JP 2020-134199 are incorporated in this application.

[0002] One embodiment of the present application relates to a multi charged particle beam drawing apparatus and a multi charged particle beam drawing method, for example, a method of reducing a range of a correction amount of a positional shift of a pattern caused by multi-beam drawing. BACKGROUND

[0003] A photolithography technique, which is progressing with miniaturization of semiconductor devices, is an extremely important process in which a pattern is uniquely generated in a semiconductor manufacturing process. In recent years, with high integration of LSIs, a circuit line width required for semiconductor devices is miniaturized year by year. Here, an electron line (electron beam) drawing technique has excellent resolution in nature, and a mask pattern is drawn to a mask blank using an electron line.

[0004] For example, there is a drawing apparatus using a multi-beam. By using a multi-beam, a larger number of beams can be irradiated at a time compared with the case of drawing with one electron beam, and thus throughput can be greatly improved. In such a multi-beam type drawing apparatus, for example, an electron beam emitted from an electron gun is made to pass through a mask having a plurality of holes to form a multi-beam, the respective beams are individually subjected to blanking control, the respective beams which are not blocked are reduced by an optical system, a mask image is reduced, and the mask image is deflected by a deflector to be irradiated to a desired position on a sample.

[0005] In multi-beam drawing, the dose irradiated from each beam is controlled according to irradiation time. Further, a positional shift of a pattern drawn by modulating the irradiation amount of each beam irradiated is corrected. In the case where drawing processing is performed for each strip region into which a chip region to be drawn is divided, for example, at the boundary of the strip regions, the positional shift becomes large. If the positional shift amount of the pattern becomes large, the maximum modulation amount of the irradiation amount becomes large. The maximum irradiation time of each emission is set to a time required to irradiate the maximum irradiation amount corresponding to the maximum modulation amount, and thus if the maximum modulation amount becomes large, the maximum irradiation time of each emission needs to be increased. As a result, there is a problem that the drawing time increases.

[0006] Here, a method is disclosed in which a group of, for example, 4 x 4 pixels on a sample surface is set as one pixel block, and the position and shape of a region on drawing data for drawing the pixel block are corrected for each pixel block, and thus the positional shift in such a pixel block is corrected (for example, refer to Patent Literature 1).

[0007] PRIOR ART DOCUMENT

[0008] Patent Literature

[0009] Patent Literature 1: Japanese Patent Application Laid-Open No. 2016-225357 SUMMARY

[0010] PROBLEMS TO BE SOLVED BY THE INVENTION

[0011] One embodiment of the present application provides an apparatus and a method capable of reducing a maximum positional shift amount of a pattern in multi-beam drawing.

[0012] MEANS FOR SOLVING THE PROBLEMS

[0013] A multi-charged particle beam drawing apparatus of one embodiment of the present application includes:

[0014] a beam forming mechanism that forms a multi-charged particle beam;

[0015] a block region generating circuit that generates a plurality of block regions from an irradiation region of the multi-charged particle beam formed by combining each small region surrounded between each beam of the multi-charged particle beam and other beams adjacent thereto; and

[0016] a drawing mechanism that draws, using the multi-charged particle beam, in a manner that irradiation of each block region is performed at least in any one of a plurality of drawing processes of multi-drawing and in a manner that the irradiation of each block region is not repeated in each drawing process of the plurality of drawing processes of the multi-drawing using one of the plurality of block regions in each drawing process, thereby performing the multi-drawing.

[0017] A multi-charged particle beam drawing method of one embodiment of the present application includes:

[0018] forming a multi-charged particle beam,

[0019] generating a plurality of block regions from an irradiation region of the multi-charged particle beam formed by combining each small region surrounded between each beam of the multi-charged particle beam and other beams adjacent thereto,

[0020] drawing, using the multi-charged particle beam, in a manner that irradiation of each block region is performed at least in any one of a plurality of drawing processes of multi-drawing and in a manner that the irradiation of each block region is not repeated in each drawing process of the plurality of drawing processes of the multi-drawing using one of the plurality of block regions in each drawing process, thereby performing the multi-drawing.

[0021] EFFECT OF THE INVENTION

[0022] According to one embodiment of the present application, a maximum positional shift amount of a pattern can be reduced. Thus, a maximum modulation amount of an irradiation amount can be reduced, and a reduction in drawing time can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a conceptual diagram showing the configuration of the drawing device of Embodiment 1.

[0024] Figure 2 is a conceptual diagram showing the configuration of the shaped aperture array substrate of Embodiment 1.

[0025] Figure 3 is a sectional view showing the configuration of the blanking aperture array mechanism of Embodiment 1.

[0026] Figure 4 is a conceptual diagram for explaining an example of the drawing action of Embodiment 1.

[0027] Figure 5 is a diagram showing an example of the irradiation region of the multi-beam and the drawing target pixel of Embodiment 1.

[0028] Figure 6 is a diagram for explaining an example of the drawing method of the multi-beam of the comparative example of Embodiment 1.

[0029] Figure 7 is a diagram showing an example of the beam responsible for irradiation in the sub-irradiation region of Embodiment 1.

[0030] Figure 8 is a diagram for explaining the state of the positional shift of the comparative example of Embodiment 1.

[0031] Figure 9 is a flowchart showing the main part of the procedure of the drawing method of Embodiment 1.

[0032] Figure 10 is a diagram showing an example of the block region of Embodiment 1.

[0033] Figure 11 is a diagram for explaining each drawing process of the multiple drawing of Embodiment 1.

[0034] Figure 12 is a diagram for explaining the state of the positional shift of the comparative example of Embodiment 2.

[0035] Figure 13 is a diagram showing an example of the block region of Embodiment 2.

[0036] Figure 14 is a diagram for explaining each drawing process of the multiple drawing of Embodiment 1.

[0037] Figure 15 is a diagram for explaining the multiple drawing performed while shifting the position of Embodiment 2.

[0038] Figure 16 is a diagram showing an example of the block region of Embodiment 3.

[0039] Figure 17 is a diagram for explaining each drawing process of the multiple drawing of Embodiment 3.

[0040] Figure 18 is a diagram showing an example of a block region of Embodiment 4.

[0041] Figure 19 is a conceptual diagram showing the configuration of the drawing apparatus of Embodiment 5.

[0042] Figure 20 is a flowchart showing the main part of the process of the drawing method of Embodiment 5.

[0043] Figure 21 is a diagram showing an example of the bit mapping of Embodiment 5.

[0044] Figure 22 is a diagram showing an example of the range of the positional offset of each block region of Embodiment 5. DETAILED DESCRIPTION

[0045] Hereinafter, in the embodiments, as an example of the charged particle beam, the configuration using an electron beam is explained. However, the charged particle beam is not limited to the electron beam, and can be a beam of charged particles using an ion beam or the like.

[0046] [Embodiment 1]

[0047] Figure 1 is a conceptual diagram showing the configuration of the drawing apparatus of Embodiment 1. In Figure 1 , the drawing apparatus 100 is provided with a drawing mechanism 150 and a control system circuit 160. The drawing apparatus 100 is an example of a multiple charged particle beam drawing apparatus. The drawing mechanism 150 is provided with an electron barrel 102 (multiple electron beam column) and a drawing chamber 103. Inside the electron barrel 102, an electron gun 201, an illumination lens 202, a shaped aperture array substrate 203, a blanking aperture array mechanism 204, a reduction lens 205, a limiting aperture substrate 206, an objective lens 207, a deflector 208, and a deflector 209 are arranged. Inside the drawing chamber 103, an XY stage 105 is arranged. On the XY stage 105, a sample 101 is arranged, which is a mask blank coated with a resist or the like, which is a drawing target substrate at the time of drawing. An exposure mask used at the time of manufacturing a semiconductor device or a semiconductor substrate (silicon wafer) or the like used for manufacturing a semiconductor device is included in the sample 101. On the XY stage 105, a mirror 210 for position measurement of the XY stage 105 is also arranged.

[0048] The control system circuit 160 has the control computer 110, the memory 112, the deflection control circuit 130, digital analog conversion (DAC) amplifiers 132, 134, a stage position detector 139, and storage devices 140, 142, 144 such as a magnetic disk device. The control computer 110, the memory 112, the deflection control circuit 130, the stage position detector 139, and the storage devices 140, 142, 144 are connected to each other via a bus not shown. The DAC amplifiers 132, 134 and the blank aperture array mechanism 204 are connected to the deflection control circuit 130. The output of the DAC amplifier 132 is connected to the deflector 209. The output of the DAC amplifier 134 is connected to the deflector 208. The deflector 208 is composed of four or more electrodes, and is controlled by the deflection control circuit 130 via the DAC amplifier 134 for each electrode. The deflector 209 is composed of four or more electrodes, and is controlled by the deflection control circuit 130 via the DAC amplifier 132 for each electrode. The stage position detector 139 irradiates a laser to a mirror 210 on the XY stage 105, and receives reflected light from the mirror 210. Then, the position of the XY stage 105 is measured using the principle of laser interference using information of the reflected light.

[0049] The rasterizing section 50, the dose map creating section 52, the position offset map creating section 54, the block region generating section 56, the dose map creating section 58, the modulation rate calculating section 59, the irradiation time calculating section 72, and the drawing control section 74 are configured in the control computer 110. Each of the "sections" such as the rasterizing section 50, the dose map creating section 52, the position offset map creating section 54, the block region generating section 56, the dose map creating section 58, the modulation rate calculating section 59, the irradiation time calculating section 72, and the drawing control section 74 has a processing circuit. The processing circuit includes, for example, a circuit, a computer, a processor, a circuit board, a quantum circuit, or a semiconductor device. Each of the "sections" can use a common processing circuit (the same processing circuit), or can use different processing circuits (different processing circuits). Information input and output with respect to the rasterizing section 50, the dose map creating section 52, the position offset map creating section 54, the block region generating section 56, the dose map creating section 58, the modulation rate calculating section 59, the irradiation time calculating section 72, and the drawing control section 74, and information in the calculation are saved in the memory 112 each time.

[0050] Further, drawing data is input from the outside of the drawing apparatus 100, and is saved in the storage device 140. In the drawing data, information of a plurality of graphic patterns for drawing is generally defined. Specifically, for each graphic pattern, a graphic code, coordinates, a size, and the like are defined.

[0051] Here, in Figure 1In the embodiment 1, the configuration required for the description will be described. For the device 100, it is also possible to have other configurations as necessary.

[0052] Figure 2 is a conceptual diagram showing the configuration of the shaped-aperture array substrate of the embodiment 1. In the embodiment 1, Figure 2 In the embodiment 1, a plurality of holes (openings) 22 of p columns in the longitudinal direction (y direction) x q columns in the lateral direction (x direction) (p, q ≥ 2) are formed in a matrix shape at a prescribed arrangement pitch on the shaped-aperture array substrate 203. In the embodiment 1, Figure 2 In the embodiment 1, for example, 32 x 32 columns of holes 22 are formed in the longitudinal and lateral directions (x, y directions). Each of the holes 22 is formed in a rectangular shape of the same size and shape. Alternatively, it can be a circular shape of the same diameter. The shaped-aperture array substrate 203 (beam forming mechanism) forms a plurality of beams 20. Specifically, a part of the electron beam 200 passes through each of the plurality of holes 22, thereby forming the plurality of beams 20.

[0053] Figure 3 is a cross-sectional view showing the configuration of the blanking aperture array mechanism of the embodiment 1. As shown in Figure 3 The blanking aperture array mechanism 204 is configured with a semiconductor substrate 31 made of silicon or the like on a support table 33. The central portion of the substrate 31 is cut from the back surface side, for example, and is processed into a membrane region 330 (1st region) of a thin film thickness h. The periphery of the membrane region 330 becomes an outer peripheral region 332 (2nd region) of a thick film thickness H. The upper surface of the membrane region 330 and the upper surface of the outer peripheral region 332 are formed at the same height position or substantially the same height position. The substrate 31 is held on the support table 33 at the back surface of the outer peripheral region 332. The central portion of the support table 33 is open, and the position of the membrane region 330 is in the region of the opening of the support table 33.

[0054] In the membrane region 330, a plurality of through holes 25 (openings) for passing the beams of the respective beams 20 are provided at positions corresponding to the respective holes 22 of the shaped-aperture array substrate 203 shown in Figure 2 In other words, a plurality of through holes 25 for passing the beams corresponding to the respective beams 20 of the plurality of beams 20 using electron beams are formed in an array shape in the membrane region 330 of the substrate 31. Further, a plurality of electrode pairs each having two electrodes are disposed on the membrane region 330 of the substrate 31 at positions facing each other across the corresponding through holes 25 of the plurality of through holes 25. Specifically, as shown in Figure 3As shown, on the diaphragm region 330, across the through holes 25, groups of the control electrodes 24 and the counter electrodes 26 (blanking device: blanking deflector) that match the positions near the respective through holes 25 are arranged. Further, inside the substrate 31 and near the respective through holes 25 on the diaphragm region 330, control circuits 41 (logic circuits) that apply deflection voltages to the control electrodes 24 for the respective through holes 25 are arranged. The counter electrodes 26 for the respective beams are connected to ground.

[0055] Further, the respective control circuits 41 are connected to n-bit (for example, 10-bit) parallel wiring for control signals. The respective control circuits 41 are connected to clock signal lines, read signals, shot signals, and wiring for power supplies, in addition to the n-bit parallel wiring for control signals. For each beam that constitutes the multi-beam, a separate blanking mechanism is constituted by the control electrodes 24, the counter electrodes 26, and the control circuits 41. Further, the plurality of control circuits 41 that are formed in an array on the diaphragm region 330 are grouped, for example, by the same row or the same column, and the control circuits 41 within the group are connected in series. Also, signals from pads 43 arranged for each group are transmitted to the control circuits 41 within the group. Specifically, a shift register that is not shown is arranged within each control circuit 41, and the shift registers within the control circuits 41 for beams of the same row, for example, in the p x q multi-beam are connected in series. Also, the control signals for beams of the same row of the p x q multi-beam are transmitted in sequence, and the control signals for each beam are held in the corresponding control circuit 41 by the clock signal p times, for example.

[0056] An amplifier (an example of a switching circuit) that is not shown is arranged within the control circuit 41. A positive potential (Vdd: blanking potential: first potential) (for example, 5 V) (first potential) and a ground potential (GND: second potential) are connected to the amplifier. The output line (OUT) of the amplifier is connected to the control electrode 24. On the other hand, the counter electrode 26 is applied with the ground potential. Also, on the substrate 31, at positions opposite the counter electrodes 26 across the respective counter electrodes 26 of the plurality of through holes 25, a plurality of control electrodes 24 that can apply the blanking potential and the ground potential in a switchable manner are arranged. In a state where the input (IN) of the amplifier is applied with the L potential, the output (OUT) of the amplifier becomes the positive potential (Vdd), and the electric field that is generated by the potential difference with the ground potential of the counter electrode 26 deflects one beam in the corresponding multi-beam 20, and is shielded by the limiting aperture substrate 206, thereby controlling the beam to be cut off. On the other hand, in a state where the input (IN) of the amplifier is applied with the H potential (active state), the output (OUT) of the amplifier becomes the ground potential, and the potential difference with the ground potential of the counter electrode 26 disappears, and the corresponding beam 20 is not deflected, and thus, by the limiting aperture substrate 206, the beam is controlled to be turned on.

[0057] The corresponding beams of the multi-beam 20 passing through the respective through-holes are deflected by voltages applied to the two control electrodes 24 and the counter electrode 26 that are independently paired, respectively. The blanking control is performed by such deflection. Specifically, the groups of the control electrodes 24 and the counter electrode 26 blank deflection of the corresponding beams of the multi-beam 20 individually by potentials switched by amplifiers that are respectively corresponding switching circuits. In this way, the plurality of blankers perform blank deflection of the corresponding beams in the multi-beam 20 after passing through the plurality of holes 22 (opening portions) of the shaped aperture array substrate 203.

[0058] Next, the operation of the drawing mechanism 150 of the drawing device 100 will be described. The electron beam 200 emitted from the electron gun 201 (emission source) illuminates the entire shaped aperture array substrate 203 with the aid of the illumination lens 202. As described above, the plurality of holes 22 (opening portions) of rectangular shape are formed in the shaped aperture array substrate 203, and the electron beam 200 illuminates a region including all of the plurality of holes 22. Each portion of the electron beam 200 irradiated to the positions of the plurality of holes 22 passes through the plurality of holes 22 of such shaped aperture array substrate 203, respectively, whereby, for example, a plurality of electron beams (multi-beam 20) of rectangular shape are formed. Such multi-beam 20 passes through the corresponding blankers (first deflector: individual blanking mechanism) of the blanking aperture array mechanism 204. Such blankers deflect (perform blank deflection) the individually passing electron beams, respectively.

[0059] The multi-beam 20 after passing through the blanking aperture array mechanism 204 is reduced by the reduction lens 205 and advances toward the hole formed at the center of the limiting aperture substrate 206. Here, the positions of the electron beams in the multi-beam 20 deflected by the blankers of the blanking aperture array mechanism 204 deviate from the hole at the center of the limiting aperture substrate 206 and are blocked by the limiting aperture substrate 206. On the other hand, the electron beams not deflected by the blankers of the blanking aperture array mechanism 204 pass through the hole at the center of the limiting aperture substrate 206 and reach the limiting aperture substrate 206. Figure 1The center of the limiting aperture substrate 206 is shown as being masked by a hole. By turning on / off this separate blanking mechanism, blanking control is performed, and the on / off of the beams is controlled. In this way, the limiting aperture substrate 206 masks each beam deflected to the state of beam cutoff by the separate blanking mechanism. Then, for each beam, a 1-time emitted beam is formed by the beam after passing through the limiting aperture substrate 206 formed from the time of becoming a beam on to the time of becoming a beam off. The multiple beams 20 after passing through the limiting aperture substrate 206 are focused by the objective lens 207 to become a pattern image of the desired reduction ratio, and each beam after passing through the limiting aperture substrate 206 (the entire passing multiple beams 20) is collectively deflected in the same direction by the deflectors 208, 209, and is irradiated onto each irradiation position on the sample 101 of each beam. The multiple beams 20 of the 1-time irradiation are desirably arranged at a pitch obtained by multiplying the arrangement pitch of the multiple holes 22 of the shaped aperture array substrate 203 by the desired reduction ratio described above.

[0060] Figure 4 is a conceptual diagram for explaining an example of a drawing operation of Embodiment 1. As shown in Figure 4As shown, the depicted area 30 of the sample 101 is virtually divided into a plurality of strip-shaped areas 32 at a prescribed width in the y direction, for example. First, the XY stage 105 is moved so that the irradiation area 34 that can be irradiated by one emission of the multi-beam 20 is positioned at the left end of the first strip-shaped area 32 or further left, and the deposition is started. When the first strip-shaped area 32 is being deposited, the XY stage 105 is moved in the -x direction, for example, so that the deposition is performed in the x direction. The XY stage 105 is continuously moved at a constant speed, for example. After the deposition of the first strip-shaped area 32 is completed, the stage position is moved in the -y direction so that the irradiation area 34 is positioned at the right end of the second strip-shaped area 32 or further right in the y direction, and the XY stage 105 is moved in the x direction, for example, so that the deposition is performed in the -x direction. The deposition is performed in the x direction in the third strip-shaped area 32 and in the -x direction in the fourth strip-shaped area 32, and the deposition is alternately performed in the x direction and in the -x direction, so that the deposition time can be shortened. However, the deposition is not limited to the case where the deposition is alternately performed in the x direction and in the -x direction. The deposition can be performed in the same direction in the deposition of each strip-shaped area 32. In one emission, a plurality of emission patterns equal in number to the plurality of apertures 22 formed in the shaped-aperture array substrate 203 are formed at one time by the plurality of beams formed by the plurality of apertures 22 of the shaped-aperture array substrate 203. Further, in the deposition of each strip-shaped area 32, the same strip-shaped area 32 is not deposited multiple times without shifting the position of the strip-shaped area 32. In the case where the deposition is performed multiple times, the deposition is performed multiple times with the position of the strip-shaped area 32 being shifted in addition to the case where the same strip-shaped area 32 is deposited multiple times without shifting the position. In the case where the same strip-shaped area 32 is deposited multiple times without shifting the position, the first deposition of each pixel is performed as the deposition of the first path and the second deposition is performed as the deposition of the second path in one stage movement, for example.

[0061] Figure 5 is a view showing an example of the irradiation area of the multi-beam of Embodiment 1 and a pixel to be deposited. In Figure 5In the strip region 32, for example, multiple control grids 27 (design grids) are arranged in a grid pattern with the beam size spacing of the multi-beam 20 on the sample 101 surface. For example, the arrangement spacing of the control grids 27 is preferably about 10 nm. These multiple control grids 27 constitute the irradiation positions of the multi-beam 20 in the design. The arrangement spacing of the control grids 27 is not limited to the beam size and can be configured with any size that can be controlled as the deflection position of the deflector 209, regardless of the beam size. Furthermore, multiple pixels 36 are set as centers of each control grid 27 and are imaginarily divided in a grid pattern with the same size as the arrangement spacing of the control grids 27. Each pixel 36 constitutes the irradiation unit area of ​​each beam in the multi-beam system. Figure 5 In the example shown, the depiction area of ​​sample 101 is divided into multiple strip regions 32 with a width dimension substantially the same as the size of the irradiation area 34 (depicting field) that can be irradiated by one irradiation of the multi-beam 20. The irradiation area 34 is, for example, a rectangular area surrounded by sides in the x and y directions. In this case, the x-direction dimension of the irradiation area 34 can be defined by multiplying the beam spacing in the x-direction (first direction) of the multi-beam 20 by the number of beams in the x-direction. The y-direction dimension of the irradiation area 34 can be defined by multiplying the beam spacing in the y-direction (second direction) of the multi-beam 20 by the number of beams in the y-direction. Furthermore, the width of the strip regions 32 is not limited to this. Preferably, it is a multiple of the size of the irradiation area 34 (n is an integer greater than or equal to 1). Figure 5 In the example, for instance, the illustration of a 32×32 column multi-beam is simplified to an 8×8 column multi-beam by omitting intermediate descriptions in both the x and y directions. Then, within the illumination area 34, multiple pixels 28 (the depicted positions of the beams) that can be illuminated by the emission of one multi-beam 20 are shown. In other words, the spacing between adjacent pixels 28 is the spacing between the individual beams of the multi-beam design. Figure 5 In the example, a sub-irradiation region 29 is formed by the area surrounded by the inter-beam spacing. Therefore, the irradiation region 34 is the region connecting the sub-irradiation regions 29 (small regions) that are surrounded by each of the multiple beams and several adjacent beams. Figure 5 In the example, it is shown that each sub-illuminated area 29 is composed of 4×4 pixels.

[0062] Figure 6 This is a diagram illustrating an example of the multi-beam depiction method used to explain the comparative example of Embodiment 1. Figure 6 The image shows a portion of the sub-irradiation region 29, depicted by each beam. Figure 6 In the example, for Figure 5 The beam (1) at coordinates (1, 3) shown will be explained. Figure 6In the example of FIG. 10, for example, a case where four pixels are drawn (exposed) during movement of the XY stage 105 by an amount of eight beam pitches is shown. In each shot, each pixel receives beam irradiation controlled to a desired irradiation time between 0 and a maximum irradiation time Ttr. The four pixels are drawn (exposed) at times t = 0 to t = 4Ttr. During drawing (exposure) of the four pixels, the multi-beam 20 as a whole is deflected by the deflector 208, whereby the irradiation region 34 follows movement of the XY stage 105 so as not to shift the relative position of the irradiation region 34 to the sample 101 due to movement of the XY stage 105. In other words, tracking control is performed. Figure 6 In the example of FIG. 10, a case where four pixels are drawn (exposed) during continuous movement of the sample 101 on the XY stage 105 by an amount of eight beam pitches, whereby one tracking cycle is implemented, is shown. In the example of FIG. 10, the four pixels are drawn (exposed) during movement of the XY stage 105 by an amount of eight beam pitches. Figure 6 In the example of FIG. 10, four pixels are drawn in order from the lowermost to the uppermost of, for example, the first pixel column from the right in the sub-irradiation region 29 of interest by the beam (1). In one tracking control, movement between pixels is performed by deflection of the multi-beam 20 as a whole by the deflector 209. After irradiation of the four pixels with the beam, the DAC amplifier 134 returns the tracking position to the tracking start position at which tracking control was started by resetting beam deflection for tracking control. In the example of FIG. 10, the tracking position is returned to the tracking start position at the time point of t = 4Ttr. Figure 6 In the example of FIG. 10, at the time point of t = 4Ttr, tracking of the sub-irradiation region 29 of interest is released, and the beam is returned to the sub-irradiation region 29 of interest which is shifted in the x direction by an amount of eight beam pitches. In the example of FIG. 10, the beam (1) is drawn from the first pixel column from the right in the sub-irradiation region 29 of interest which is adjacent to the sub-irradiation region 29 of interest for the beam (1) in the -x direction. Figure 6 In the example of FIG. 10, the beam (1) is drawn from the first pixel column from the right in the sub-irradiation region 29 of interest which is adjacent to the sub-irradiation region 29 of interest for the beam (1) in the -x direction. Figure 5 The beam (1) for the sub-irradiation region 29 of interest is described, but the same is applied to the respective sub-irradiation regions 29 for the beams of the other coordinates. That is, the beam of the coordinates (n, m) ends drawing from the first pixel column from the right with respect to the corresponding sub-irradiation region 29 at the time point of t = 4Ttr. For example, the beam (2) of the coordinates (2, 3) ends drawing from the first pixel column from the right with respect to the sub-irradiation region 29 which is adjacent to the sub-irradiation region 29 of interest for the beam (2) in the -x direction. Figure 6 The beam (1) for the sub-irradiation region 29 of interest is described, but the same is applied to the respective sub-irradiation regions 29 for the beams of the other coordinates. That is, the beam of the coordinates (n, m) ends drawing from the first pixel column from the right with respect to the corresponding sub-irradiation region 29 at the time point of t = 4Ttr. For example, the beam (2) of the coordinates (2, 3) ends drawing from the first pixel column from the right with respect to the sub-irradiation region 29 which is adjacent to the sub-irradiation region 29 of interest for the beam (2) in the -x direction.

[0063] Furthermore, the drawing of the first pixel column from the right in each sub-irradiation area 29 is completed. Therefore, after tracking reset, in the next tracking cycle, firstly, the deflector 209 deflects the beam in a manner that aligns (shifts) with the drawing position of the control grid 27 corresponding to the bottom segment of the second pixel column from the right in each sub-irradiation area 29. By repeating this action, the beam irradiation of all pixels in each sub-irradiation area 29 is completed during the period when the XY stage 105 moves a distance of 32 (=4×8) beam pitches. In the drawing of the strip area 32, by repeating this action, according to Figure 4 In the case of the irradiated areas 34a to 34o shown, the position of the irradiated area 34 is moved sequentially to depict the strip-shaped area. Figure 6 The example shows a sub-illumination region 29 consisting of a 4×4 pixel area, but it is not limited to this. When the sub-illumination region 29 consists of an n×n pixel area, n control grids (n pixels) are drawn while shifting the illumination position through one tracking operation. By drawing n pixels per n pixels using different beams through n tracking operations, all pixels within an n×n pixel area are drawn.

[0064] Figure 7 This diagram illustrates an example of the beam irradiating the secondary irradiation area responsible for implementation method 1. According to... Figure 6 The example illustrates the depiction order, where the depiction mechanism 150 first irradiates the sub-irradiation area 29 in the y-direction of the first beam column from the right in the x-direction with each segment of the beam (1), as shown in the example. Figure 7 As shown, four beams are used to irradiate the area, with the first column from the right being beam (1), the second column being beam (9), the third column being beam (17), and the fourth column from the right (left end) being beam (25), spaced eight times apart each time. Alternatively, the irradiation order can be set such that each sub-irradiation area 29 is irradiated by the same beam it is responsible for.

[0065] Figure 8 This is a diagram illustrating the positional offset state of the comparative example of Embodiment 1. According to... Figure 6 The order of description illustrated in the examples, in relation to Figure 5 In the beam array region 10, which is a rectangular region on a sample 101 of the same size as the irradiation area 34, all pixels can be irradiated by multiple beams 20 during the period when the XY stage 105 moves a distance equal to 32 beam intervals. In such a beam array region 10, there can be... Figure 8 The position offset shown in (a). Figure 8 In (a), the direction of the arrow indicates the direction of the positional offset, and the length of the arrow indicates the magnitude of the positional offset. When depicting the bar region 32, due to repetition...Figure 6 The drawing order explained in the example of FIG. 8A is thus repeated in the strip-shaped region 32, and as shown in (b) of FIG. 8A, the beam array region 10 is repeated in a butted manner. The position shift in the beam array region 10 thus generated is thus periodically repeated in the strip-shaped region 32. Figure 8

[0066] Here, for example, in the 32x32 multi-beam 20, the farther the beam is from the center side, the more the beam is affected by aberration and the like of the electron optical system, and thus the position shift amount of the irradiation position on the sample 101 becomes large. Thus, the more the drawing order using the beams of the 32x32 multi-beam 20 that irradiate the same sub-irradiation region 29 with the beams close to each other, the more the position shift depending on the arrangement position of the beam is affected. For example, in the drawing order in which all the pixels of the sub-irradiation region 29 are irradiated by the beam of one same arrangement position, the position shift depending on the arrangement position of the beam is most affected. In the drawing order explained in the example of FIG. 8A, each sub-irradiation region 29 is irradiated by 4 beams separated by 8 beam pitches, and thus although the effect of the position shift depending on the arrangement position of the beam in the x direction is averaged, the position shift corresponding to each position of the beam array region 10 is generated. The position shift amount of the beam array region 10 differs depending on the content of the drawing order, but there is a tendency that the position shift amount becomes large at the outer periphery. Thus, in the example of FIG. 8A, the position shift amount is particularly large at the boundaries of the beam array regions 10. Figure 6 Figure 8

[0067] However, as described above, if the position shift amount of the pattern becomes large, the maximum modulation amount of the irradiation amount becomes large. For example, a modulation of several hundreds of percent (for example, 300%) of the reference value (basic dose) of the irradiation amount is required. The maximum irradiation time Ttr per shot is set to the time required to irradiate the maximum irradiation amount corresponding to the maximum modulation amount, and thus if the maximum modulation amount becomes large, the maximum irradiation time Ttr per shot needs to be increased. The shot period of the multi-beam 20 is set to a value obtained by adding, for example, the settling time of the DAC amplifier 132 to the maximum irradiation time Ttr. Thus, if the maximum irradiation time Ttr becomes long, the shot period becomes long accordingly, and there is a problem that the drawing time increases. Thus, in Embodiment 1, the maximum value of the position shift amount is reduced. To this end, the beam array region 10 is divided into a plurality of block regions.​​​

[0068] Figure 9 is a flowchart showing the main part process of the drawing method of Embodiment 1. In Figure 9 , the drawing method of Embodiment 1 implements a series of processes of the block region generating process (S102), the position offset measuring process (S104), the modulation rate calculating process (S108), the rasterizing process (S110), the dose calculating process (S116), the dose calculating process for each block path (S120), the irradiation time calculating process (S122), and the multiple drawing process (S124).

[0069] As the block region generating process (S102), the block region generating section 56 generates a plurality of block regions from the irradiation region of the multi-beam 20 composed of a plurality of sub-irradiation regions 29 (small regions) surrounded between each beam of the multi-beam 20 and other adjacent beams. Specifically, the block region generating section 56 generates a plurality of block regions from the beam array region 10 (rectangular region) surrounded by the edges of the x-direction dimension set to the value obtained by multiplying the number of beams in the x-direction of the multi-beam 20 by the beam-to-beam interval in the x-direction, and the edges of the y-direction dimension set to the value obtained by multiplying the number of beams in the y-direction by the beam-to-beam interval in the y-direction.

[0070] Figure 10 is a drawing showing an example of the block region of Embodiment 1. In Figure 10 , a case where the beam array region 10 is divided (division based on a longitudinal division line) into a plurality of, for example, two, block regions 12, 13 in the x-direction is shown. The block region 12 is constituted by the region Al of the left half of the beam array region 10. The block region 13 is constituted by the region Bl of the right half of the beam array region 10. Therefore, in the case where each sub-irradiation region 29 is drawn with the same beam configuration as the beam array region 10, the left outer peripheral portion of the block region 12 of the region Al causes a position offset of the left outer peripheral portion of the beam array region 10. The right outer peripheral portion of the block region 12 of the region Al causes a position offset of the central portion of the beam array region 10. On the other hand, the left outer peripheral portion of the block region 13 of the region Bl causes a position offset of the central portion of the beam array region 10. The right outer peripheral portion of the block region 13 of the region Bl causes a position offset of the right outer peripheral portion of the beam array region 10.

[0071] Here, in the example of Figure 10 , a case where the beam array region 10 is divided into two is shown, but it is not limited thereto. The number of multiple drawings using a predetermined multiple drawing without shifting the position of the strip-shaped region 32 (drawing region) determines the number of block regions generated from a plurality of block regions. In Figure 10In the example of FIG. 8, a case of multiple drawing with a multiple number N = 2 without shifting the position of the strip-shaped region 32 is shown. For example, if the multiple number N = 4, the beam array region 10 is divided into 4 parts in the x direction, and multiple drawing with a multiple number N = 4 without shifting the position of the strip-shaped region 32 is performed.

[0072] As the position shift amount measuring process (S104), the drawing device 100 performs drawing of the evaluation pattern of the amount of the beam array region 10 with the multiple beams 20 on the evaluation substrate in accordance with a predetermined drawing order. Then, the position shift amount of the pattern at each position of the beam array region 10 is measured by the position measurer using the drawn evaluation substrate. The measurement data of the position shift amount is input from the outside to the drawing device 100 and stored in the storage device 144. Here, for example, a position shift evaluation region is set for each of the adjoining 8 x 8 sub-irradiation regions 29. In this case, one position shift evaluation region can be expressed in the adjoining 8 x 8 sub-irradiation regions 29, and thus the beam array region 10 composed of 32 x 32 sub-irradiation regions 29 can be divided into 4 x 4 = 16 position shift evaluation regions. Then, the position shift map creating section 54 reads out the position shift amounts stored in the storage device 144, calculates the average of the position shift amounts of the evaluation pattern inside for each position shift evaluation region, and creates a position shift map. Thus, the position shift amount at each position of the beam array region 10 shown in (a) of FIG. 8 can be obtained. The position shift map is stored in the storage device 144 in association with the block region. Here, a case where one position shift amount is defined for each 4 x 4 position shift evaluation region is shown, but it is not limited thereto. Further, the position shift amount can be defined for each position of the subdivision. Figure 8

[0073] As the modulation rate operation process (S108), the modulation rate operation section 59 (correction amount operation section) operates the modulation rate of the irradiation amount (dose) that becomes the correction amount of each beam so that, for each block region of the plurality of block regions 12, 13, in the case where the irradiation through the block region is drawn so as not to repeatedly cover the strip-shaped region 32 of the sample 101, in other words, in the case where the drawing is performed so as to connect the same block region to each other and cover the strip-shaped region 32 of the sample 101, the position shift of the pattern drawn by the plurality of beams responsible for the beam irradiation in the block region is corrected.

[0074] Figure 11 is a diagram for explaining each drawing process of the multiple drawing of Embodiment 1. Not Figure 11 The drawing process of the comparative example in which the drawing of the beam array region 10 is simply repeated as shown in (a) of FIG. 8, in Embodiment 1, as shown in (a) of FIG. 9, the position shift amount of the evaluation pattern is measured for each position of the beam array region 10, and the position shift map is created. Then, the modulation rate of the irradiation amount (dose) that becomes the correction amount of each beam is operated so that, for each block region of the plurality of block regions 12, 13, in the case where the irradiation through the block region is drawn so as not to repeatedly cover the strip-shaped region 32 of the sample 101, in other words, in the case where the drawing is performed so as to connect the same block region to each other and cover the strip-shaped region 32 of the sample 101, the position shift of the pattern drawn by the plurality of beams responsible for the beam irradiation in the block region is corrected. Figure 11 ​As shown in (b), the multiple drawing of the block regions 12, 13 is performed so as to connect the same block regions to each other and to cover the bar-shaped region 32 (the drawn region) of the sample 101. In other words, the multiple drawing of the drawing process of the block region 13 of the region Bl repeatedly covering the bar-shaped region 32 and the multiple drawing of the drawing process of the block region 12 of the region Al repeatedly covering the bar-shaped region 32 are performed. Thus, the irradiation time data of the 1-path amount for the multiple drawing of the drawing process of the block region 13 repeatedly covering the region Bl is generated, and the irradiation time data of the 1-path amount for the multiple drawing of the drawing process of the block region 12 repeatedly covering the region Al is generated. Thus, in the 1st path, the block regions 13 of the region Bl are connected to each other, and thus the boundaries between the block regions 13 are connected to the right and left outer peripheral portions of the region Bl. In the 2nd path, the block regions 12 of the region Al are connected to each other, and thus the boundaries between the block regions 12 are connected to the right and left outer peripheral portions of the region Al. Thus, in either case, the boundaries between the outer peripheral portions and the central portions of the beam array region 10 are connected, and there is no boundary between the left and right end portions of the beam array region 10 in appearance. Thus, the substantial positional displacement amount at the boundary position of each path can be reduced. The maximum positional displacement amount of the pattern is likely to occur at such a boundary position. Thus, if the drawing process is performed separately for each block region, the maximum positional displacement amount occurring at the boundary position can be reduced in many cases. Further, the data processing is performed for each path on the drawing data. Thus, the modulation rate calculation unit 59 calculates the modulation rate of the irradiation amount of each beam for each path on the basis of the reduced positional displacement amount. If the drawing order is determined, which beam irradiates each pixel 36 in the block region is determined for each block region. Further, the positional displacement amount of each position in the block region can be referred to from the positional displacement map stored in the storage device 144. Thus, the modulation rate of the irradiation amount of the beam responsible for the irradiation of each pixel 36 in the block region is calculated. The method of calculating the modulation rate for correcting the positional displacement can be the same as the conventional method. For example, for each pixel around the beam-irradiated pixel, the proportion of the area of the positional displacement (the area of the overlapping beam portion) divided by the beam area is calculated as the allocation amount (the modulation rate of the beam) to the pixel located at the position opposite to the overlapping pixel.

[0075] Further, the paths of the multiple drawing of Embodiment 1 do not mean that, after the last position of the bar-shaped region 32 is temporarily drawn, the former of the two times of the stage movement returning to the initial position of the bar-shaped region 32 and drawing the last position of the bar-shaped region 32 again is the 1st path, and the latter is the 2nd path. In Embodiment 1, in one time of the stage movement, the multiple drawing of the drawing process of the 1st drawing of each pixel as the 1st path and the drawing process of the 2nd drawing as the 2nd path is performed.

[0076] As the rasterizing process (S110), the rasterizing section 50 reads out the drawing data from the storage device 140, and calculates the pattern area density p' within each pixel 36. This processing is performed, for example, for each bar region 32.

[0077] As the dose calculating process (S116), the dose map creating section 52 first virtually divides the drawing region (here, for example, the bar region 32) into a plurality of adjacent grid regions (grid regions for proximity effect correction calculation) in a grid shape at a prescribed size. The size of the adjacent grid region is preferably set to about 1 / 10 of the range of influence of the proximity effect, for example, about 1 μm. The dose map creating section 52 reads out the drawing data from the storage device 140, and calculates the pattern area density p of the pattern arranged within each adjacent grid region.

[0078] Next, the dose map creating section 52 calculates, for each adjacent grid region, a proximity effect correction irradiation coefficient Dp(x) (corrected irradiation amount) for correcting the proximity effect. The unknown proximity effect correction irradiation coefficient Dp(x) can be defined by the same threshold model for proximity effect correction as the prior method, using the backscattering coefficient η, the threshold model of the irradiation amount threshold Dth, the pattern area density p, and the distribution function g(x).

[0079] Next, the dose map creating section 52 calculates, for each pixel 36, an incident irradiation amount D(x) (dose) for irradiation to the pixel 36. The incident irradiation amount D(x) is, for example, calculated as a value obtained by multiplying a prescribed reference irradiation amount Dbase by the proximity effect correction irradiation coefficient Dp and the pattern area density p'. The reference irradiation amount Dbase can be defined, for example, as Dth / (1 / 2 + η). According to the above, the originally intended incident irradiation amount D(x) corrected for the proximity effect, based on the layout of the plurality of graphic patterns defined in the drawing data, can be obtained.

[0080] Then, the dose map creating section 52 creates a dose map defining the incident irradiation amount D(x) of each pixel 36 in bar units. Such an incident irradiation amount D(x) of each pixel 36 becomes, in design, a predetermined incident irradiation amount D(x) of the control grid 27 irradiated to the pixel 36. In other words, the dose map creating section 52 creates a dose map defining the incident irradiation amount D(x) of each control grid 27 in bar units. The created dose map is, for example, stored in the storage device 142.

[0081] As the dose calculation process (S120) for each block path, the dose map creation section 58 calculates the irradiation amount of each pixel for each of the paths set for each block region, and creates a dose map. Specifically, for each path and each pixel 36, the dose D of the pixel 36 is divided by the number of shots, and the dose multiplied by the dose modulation factor calculated is distributed to the surrounding pixels as the distribution destination. Thus, the dose corrected for the positional shift / shape shift of the pattern caused by the positional shift of the irradiation position of the beam can be obtained. Using the dose of each pixel 36 (control grid 27) for which the positional shift of the irradiation position is corrected, the dose map for each path set for each block region is created.

[0082] The dose of each beam affects the dose modulation factor for the positional shift correction. At the boundaries of the beam array regions 10 from each other, for example, the positional shift of +Δ at the end of one of the beam array regions 10 and the positional shift of -Δ at the end of the other are added, and thus the amount of positional shift easily becomes large. As a result, the dose easily becomes large. In contrast, at the boundaries of the block regions 13 from each other or the boundaries of the block regions 12 from each other, the positional shift at the end of one side to be added can be reduced, and thus the dose can be reduced in most cases compared to the boundaries of the beam array regions 10 from each other.

[0083] As the irradiation time calculation process (S122), the irradiation time calculation section 72 calculates the irradiation time t corresponding to the dose of each pixel of each path corrected for the positional shift. The irradiation time t can be calculated by dividing the dose D by the current density. The irradiation time t of each pixel 36 (control grid 27) is calculated as a value within the maximum irradiation time Ttr that can be irradiated by one emission of the multi-beam 20. The irradiation time data is stored in the storage device 142.

[0084] As the multiple depiction process (S124), first, the depiction control section 74 re-arranges the irradiation time data in the emission order in the depiction order. Then, the irradiation time data is transmitted to the deflection control circuit 130 in the emission order. Here, the first path and the second path are implemented simultaneously and in parallel. Therefore, for the beams responsible for the block area 13, the irradiation time data of the first path is transmitted in the emission order, and for the beams responsible for the block area 12, the irradiation time data of the second path is transmitted in the emission order. The deflection control circuit 130 outputs the blanking control signal to the blanking aperture array mechanism 204 in the emission order, and outputs the deflection control signal to the DAC amplifiers 132, 134 in the emission order. Then, the depiction mechanism 150 performs the multiple depiction in such a manner that the multiple beams 20 corrected using the modulation rate (correction amount) for each block area 12, 13 are used to at least perform irradiation of each block area 12, 13 by each depiction process of the multiple depiction, and in such a manner that the irradiation of each block area 12, 13 by each depiction process of the multiple depiction is not repeated by using one of the multiple block areas 12, 13 in each depiction process. In other words, the depiction mechanism 150 performs the multiple depiction of each block area 12, 13 in such a manner that the same block areas are connected to each other and overlap the strip-shaped area 32 of the sample 101, as shown in (b) of FIG. 10, using the multiple beams 20 corrected using the modulation rate (correction amount) for each block area 12, 13. Figure 11

[0085] In the depiction order shown in FIG. 10, all of the pixels within the beam array area 10 are depicted by the multiple beams 20 during the period in which the XY stage 105 moves by an amount of 32 beam pitches. On the other hand, in Embodiment 1, it is necessary to perform the depiction of each block area 12, 13 twice, respectively, during the period in which the XY stage 105 moves by an amount of 32 beam pitches. Therefore, in Embodiment 1, it is sufficient to control so that the depiction of each block area 12, 13 is ended by the multiple beams 20 during the period in which the XY stage 105 moves by an amount of 16 beam pitches. Therefore, the emission cycle time is accelerated by 2 times. Alternatively, it is also possible to not change the emission cycle time, but instead, to reduce the stage speed to 1 / 2, to perform one-time tracking control during the period in which the XY stage 105 moves by an amount of 8 beam pitches, and thereby to be able to implement the same processing. Figure 6 According to Embodiment 1, it is possible to reduce the maximum position shift amount of the pattern. Therefore, it is possible to reduce the maximum modulation amount of the irradiation amount. Therefore, it is possible to achieve a reduction in the depiction time. Therefore, compared to the case in which the multiple depiction of the multiple number N = 2 is performed in the depiction order shown in FIG. 8, it is possible to shorten the emission cycle, as a result of which it is possible to shorten the depiction time.

[0086] Figure 6

[0087] ​​​[Embodiment 2]

[0088] In Embodiment 1, the configuration in which the beam array region 10 is divided (division based on a longitudinal division line) into a plurality of, for example, two portions in the x direction is described, but is not limited thereto. In Embodiment 2, the configuration in which the beam array region 10 is divided (division based on a transverse division line) into a plurality of, for example, two portions in the y direction is described. The configuration of the drawing apparatus 100 of Embodiment 2 can also be the same as that of Embodiment 1. Further, the flowchart representing the main partial process of the drawing method of Embodiment 2 is the same as that of Embodiment 1. Hereinafter, the contents other than the points specifically described are the same as those of Embodiment 1. Figure 1 Figure 9

[0089] Figure 12 is a view for explaining the state of the positional displacement of the comparative example of Embodiment 2. In the multiple drawing of the comparative example in which the positions of the stripe regions 32 are shifted on one side, as shown in Figure 12 , on the stripe layer of the 1st path, the boundaries between the stripe regions are repeated in such a manner that the beam array regions 10 are in contact with each other. Similarly, on the stripe layer of the 2nd path, the boundaries between the stripe regions are also repeated in such a manner that the beam array regions 10 are in contact with each other. In either case, the upper and lower end portions of the beam array regions 10 are connected to each other. As described above, the maximum positional displacement amount of the pattern easily occurs at such a boundary position. Therefore, the positional displacement at the boundaries of the stripe regions 32 becomes large. As described above, the positional displacement amount of the beam array regions 10 differs depending on the contents of the drawing order, but there is a tendency that it becomes large at the outer peripheral portion. For example, in the drawing order shown in Figure 6 , the arrangement positions of the beams in the x direction are dispersed, and thus the positional displacement amount can be averaged, but the beam positions in the y direction are the same, and thus are not averaged in the y direction. Therefore, at the boundaries of the beam array regions 10, the positional displacement amount becomes particularly large, as shown in Figure 12 . If the positional displacement amount of the pattern becomes large, the maximum modulation amount of the irradiation amount becomes large. Therefore, in Embodiment 2, the block region divided in the y direction is generated.

[0090] As the block region generation process (S102), the block region generation section 56 generates a plurality of block regions divided in the y direction from the beam array region 10 (rectangular region).

[0091] Figure 13 is a view showing an example of the block region of Embodiment 2. In Figure 13 ​​In the example shown, two block regions 14 and 15 are generated, dividing the beam array region 10 in the y-direction (based on the division by the lateral dividing line) into multiple, for example, two parts. Block region 14 is formed by region A2, which is the lower half of the beam array region 10. Block region 15 is formed by region B2, which is the upper half of the beam array region 10. Therefore, when each sub-irradiation region 29 is depicted with the same beam configuration as the beam array region 10, the lower outer periphery of block region 14 in region A2 experiences a positional offset from the lower outer periphery of the beam array region 10. The upper outer periphery of block region 14 in region A2 experiences a positional offset from the central portion of the beam array region 10. On the other hand, the lower outer periphery of block region 15 in region B2 experiences a positional offset from the central portion of the beam array region 10. The upper outer periphery of block region 15 in region B2 experiences a positional offset from the upper outer periphery of the beam array region 10.

[0092] Here, in Figure 13 The example shows a case where the beam array region 10 is divided into two parts, but it is not limited to this. The number of block regions generated is determined by a pre-defined multi-drawing multiplicity performed while offsetting the positions of the strip regions 32 (drawing regions). Figure 13 The example shows a case where multiple depiction with a multiple number N=2 is performed, where the position of the strip region 32 is offset by half the width of the short side of the strip region 32 each time. For example, if the multiple number N=4, the beam array region 10 is divided into 4 parts in the y direction, and multiple depiction is performed while the position of the strip region 32 is offset by half the width of the short side of the strip region 32 each time.

[0093] As a modulation rate calculation step (S108), the modulation rate calculation unit 59 (correction amount calculation unit) calculates the modulation rate of the irradiation amount (dose) of each of the multiple block regions 14, 15 as the correction amount of each beam, so that when the pattern is drawn in a way that connects the same block regions to each other and covers the strip region 32 of the sample 101, the positional offset of the pattern drawn by the multiple beams responsible for irradiating the beam in that block region is corrected.

[0094] Figure 14 These are diagrams used to illustrate the various drawing processes in the multiple drawings of Embodiment 2. For example... Figure 14As shown, the multiple deposition of the block regions 14, 15 is performed in such a manner that the same block regions are connected to each other and the bar-shaped regions 32 (deposition regions) of the sample 101 are overlapped. In other words, in the deposition process of the bar-shaped layer 1, the block regions 14 of the region A2 are overlapped in the longitudinal direction for the bar-shaped regions 32. In the deposition process of the bar-shaped layer 2, the block regions 15 of the region B2 are overlapped in the longitudinal direction for the bar-shaped regions 32. In Embodiment 2, the bar-shaped layer 1 is configured by connecting the bar-shaped regions 32 overlapped by the block regions 14 of the region A2 without being separated upward. The bar-shaped layer 2 is configured by connecting the bar-shaped regions 32 overlapped by the block regions 15 of the region B2 without being separated upward. The multiple deposition of the deposition process of the bar-shaped layer 1 and the deposition process of the bar-shaped layer 2 with the positions shifted in the y direction by 1 / 2 of the bar-shaped region width is performed.

[0095] Therefore, the irradiation time data of 1 path amount for the multiple deposition of the deposition process of the block regions 14 overlapped in the region A2 is generated, and the irradiation time data of 1 path amount for the multiple deposition of the deposition process of the block regions 15 overlapped in the region B2 is generated. Therefore, in the 1st path, the block regions 14 of the region A2 are connected to each other in the y direction, and thus the boundary of the bar-shaped regions 32 is connected to the upper and lower outer circumferential portions of the region A2. In the 2nd path, the block regions 15 of the region B2 are connected to each other in the y direction, and thus the boundary of the bar-shaped regions 32 is connected to the upper and lower outer circumferential portions of the region B2.

[0096] Therefore, in either case, the outer circumferential portion of the beam array region 10 is connected to the central portion, and thus there is no boundary in appearance in which the upper and lower ends of the beam array regions 10 are connected to each other. Therefore, it is possible to reduce the substantial positional shift amount at the bar-shaped boundary position of each path. The maximum positional shift amount of the pattern is easily generated at such a boundary position. Therefore, if the deposition process is performed separately for each block region, it is possible to reduce the maximum positional shift amount generated at the bar-shaped boundary position in most cases. Then, the data process is performed on the deposition data for each path, and thus the modulation rate calculation unit 59 calculates the modulation rate of the irradiation amount of each beam for each path on the basis of the reduced positional shift amount. If the deposition order is determined, it is determined which beam irradiates each pixel 36 in the block region. Further, it is possible to refer to the positional shift amount of each position in the block region from the positional shift map stored in the storage device 144.

[0097] The contents of each process of the rasterization process (S110), the dose calculation process (S116), and the dose calculation process (S120) of each block path are the same as those of Embodiment 1.

[0098] As a multiple drawing process (S124), the drawing mechanism 150 uses a multi-beam 20 with modulation rate (correction amount) correction for each block region 14, 15, such as Figure 14 As shown, multiple depictions are made of each block region 14, 15 in such a way that the same block regions are connected to each other and cover the strip region 32 of the sample 101.

[0099] Figure 15 This is a diagram illustrating multiple depictions performed while offsetting one side of the position in Embodiment 2. For example... Figure 15 As shown, the lower half of the kth strip region 32 of strip layer 1 (S1) and the lower half of the kth strip region 32 of strip layer 2 (S2) are simultaneously depicted. Then, the depicted area of ​​the multi-beam 20 is moved in the y-direction by half the strip width. Next, the upper half of the kth strip region 32 of strip layer 1 and the upper half of the kth strip region 32 of strip layer 2 are simultaneously depicted. Then, the depicted area of ​​the multi-beam 20 is moved in the y-direction by half the strip width. Next, the lower half of the (k+1)th strip region 32 of strip layer 1 and the lower half of the (k+1)th strip region 32 of strip layer 2 are simultaneously depicted. Hereinafter, by performing the same depiction process, multiple depictions of each strip region 32 are performed using the beams of each region 14 and 15. Thus, in the multiple depiction of Embodiment 2, multiple depiction is performed simultaneously and in parallel during one worktable movement, depicting the first path of the lower half region A2 of the beam array region 10 and the second path of the upper half region B2 of the beam array region 10.

[0100] In Embodiment 2, the stage movement is the same as that used in multiple drawing operations where the positions are offset by half the width of the strip using the beam array region 10. However, according to Embodiment 2, the processing of the drawing data is different, thus reducing the maximum positional offset of the pattern. Therefore, the maximum modulation amount of the irradiation can be reduced. Therefore, the drawing time can be shortened.

[0101] [Implementation Method 3]

[0102] In Embodiment 3, a configuration obtained by combining the configuration of dividing the beam array region 10 in the x-direction (based on longitudinal dividing lines) and the configuration of dividing it in the y-direction (based on transverse dividing lines) will be described. The configuration of the drawing device 100 in Embodiment 3 can also be the same as... Figure 1 The same. Furthermore, the flowchart illustrating the main steps of the method described in Embodiment 3 is the same as... Figure 9 Same as above. Unless otherwise specified, the content below is the same as in Implementation Method 1 or Implementation Method 2.

[0103] As the block region generation process (S102), the block region generation section 56 generates a plurality of block regions divided in the x direction and the y direction from the beam array region 10 (rectangular region).

[0104] Figure 16 is a diagram showing an example of the block region of Embodiment 3. In Figure 16 , a case where four block regions 16, 17, 18, 19 are generated by dividing the beam array region 10 in the x direction (division based on the longitudinal division line) into a plurality of, for example, two portions and in the y direction (division based on the lateral division line) into a plurality of, for example, two portions is shown. The block region 16 is constituted by the region A3 of the upper left 1 / 4 of the beam array region 10. The block region 17 is constituted by the region B3 of the upper right 1 / 4 of the beam array region 10. The block region 18 is constituted by the region C3 of the lower left 1 / 4 of the beam array region 10. The block region 19 is constituted by the region D3 of the lower right 1 / 4 of the beam array region 10.

[0105] Here, in the example of Figure 16 , a case where the beam array region 10 is divided into two portions in the x direction and into two portions in the y direction, for a total of four portions, is shown, but is not limited thereto. The total of the number of multiple drawings of the multiple drawing of the predetermined drawing performed without shifting the position of the strip-shaped region 32 (drawing region) and the number of multiple drawings of the multiple drawing of the predetermined drawing performed while shifting the position of the strip-shaped region 32 (drawing region) each time by half the width of the short side of the strip-shaped region 32 determines the number of block regions of the plurality of block regions generated. In the example of Figure 16 , a case where the multiple drawing of the number N = 2 of multiple drawings performed without shifting the position of the strip-shaped region 32 and the multiple drawing of the number N = 2 of multiple drawings performed while shifting the position of the strip-shaped region 32 each time by half the width of the short side of the strip-shaped region 32 are combined to obtain the multiple drawing of the number N = 4 of multiple drawings is shown.

[0106] As the modulation rate operation process (S108), the modulation rate operation section 59 (correction amount operation section) operates the modulation rate of the irradiation amount (dose) that becomes the correction amount of each beam for each block region of the plurality of block regions 16, 17, 18, 19 so that, in the case where the strip-shaped region 32 of the same block region is drawn so as to be connected to each other and overlap the sample 101, the position of the pattern drawn by the plurality of beams responsible for the irradiation of the beam within the block region is corrected for the positional shift.

[0107] Figure 17 is a diagram for explaining each drawing process of the multiple drawing of Embodiment 3. As Figure 17As shown, the multiple drawing of each block region 16, 17, 18, 19 is performed in a manner of connecting the same block regions to each other and covering the strip region 32 (drawing region) of the sample 101. In other words, in the drawing process of the strip layer 1, the block region 16 of the region A3 is repeatedly covered in the longitudinal direction and the lateral direction for the strip region 32. In the drawing process of the strip layer 2, the block region 17 of the region B3 is repeatedly covered in the longitudinal direction and the lateral direction for the strip region 32. In the drawing process of the strip layer 3, the block region 18 of the region C3 is repeatedly covered in the longitudinal direction and the lateral direction for the strip region 32. In the drawing process of the strip layer 4, the block region 19 of the region D3 is repeatedly covered in the longitudinal direction and the lateral direction for the strip region 32. Then, the multiple drawing of the drawing process of the strip layer 1, the drawing process of the strip layer 2, the drawing process of the strip layer 3, and the drawing process of the strip layer 4 is performed. Thus, the irradiation time data of 1 path amount of the multiple drawing of the drawing process of the repeatedly covered block region 16 of the region A3 is generated, the irradiation time data of 1 path amount of the multiple drawing of the drawing process of the repeatedly covered block region 17 of the region B3 is generated, the irradiation time data of 1 path amount of the multiple drawing of the drawing process of the repeatedly covered block region 18 of the region C3 is generated, and the irradiation time data of 1 path amount of the multiple drawing of the drawing process of the repeatedly covered block region 19 of the region D3 is generated. Thus, in each path, the boundary where the outer peripheral portion of the beam array region 10 and the central portion are connected in the x, y direction, and the boundary where the outer peripheral end portions of the beam array region 10 are connected to each other do not exist in appearance. Thus, if the drawing process is performed separately for each block region, the maximum positional shift amount generated at each boundary position in the x, y direction can be reduced in most cases. Then, on the drawing data, the data processing is performed for each path, and thus the modulation rate calculation unit 59 calculates the modulation rate of the irradiation amount of each beam for each path based on the reduced positional shift amount.

[0108] The contents of each of the processes of the rasterizing process (S110), the dose calculation process (S116), and the dose calculation process for each block path (S120) are the same as those of Embodiment 1.

[0109] As the multiple depiction process (S124), the depiction mechanism 150 performs multiple depiction of the block regions 16, 17, 18, 19 in a manner of connecting the same block regions to each other and covering the strip region 32 of the sample 101 using the multiple beams 20 corrected using the modulation rate (correction amount) for each block region 16, 17, 18, 19. Here, as explained in Embodiment 1, as long as the depiction of each block region 16, 17, 18, 19 is ended by the multiple beams 20 during control to move the XY stage 105 by an amount of 16 beam pitches, the depiction process is performed. Further, as long as the strip region 32 is moved by a size of 1 / 2 of the strip width in the y direction each time the depiction of one strip region 32 is ended, the depiction process is performed similarly.

[0110] [Embodiment 4]

[0111] In Embodiments 1 to 3, the case where the beam array region 10 is divided without a remainder is shown, but is not limited thereto. In Embodiment 4, the configuration in the case where a block region that does not include a part of the beam array region 10 is generated is explained. The configuration of the depiction apparatus 100 of Embodiment 4 can also be the same as Figure 1 Further, the flowchart showing the main part process of the depiction method of Embodiment 4 is the same as Figure 9 Hereinafter, the content other than the points explained particularly is the same as Embodiment 3.

[0112] As the block region generation process (S102), the block region generation section 56 generates a plurality of block regions in a manner of generating a gap between the block regions. In other words, a plurality of block regions divided in the x direction and / or the y direction with a gap in the x direction and / or the y direction is generated from the beam array region 10 (rectangular region).

[0113] Figure 18 is a drawing showing an example of the block region of Embodiment 4. In the example of Figure 18 , the case where four block regions are generated from the beam array region 10 is shown. In the example of Figure 18 (a), the case where a gap is provided between the upper regions A4, B4 and the lower regions C4, D4 is shown. In the example of Figure 18 (b), the case where a gap is provided between the left regions A5, C5 and the right regions B5, D5 is shown. In the example of Figure 19 (c), the case where a gap is provided between the upper left region A6, the upper right region B6, the lower left region C6, and the lower right region D6, respectively, is shown. It is preferable to generate a plurality of block regions in a manner of generating a gap at a position of, for example, a defective beam, a beam having a large positional deviation, in the multiple beams 20.

[0114] The contents of each of the following processes are the same as in Embodiment 3. However, in the case of performing multiple drawing, the drawing process is performed taking into account the gap so that the region located in the gap is not left as drawn.

[0115] In order to correct the positional displacement amount of the pattern caused by the defective beam and the beam having a large positional displacement, a large dose modulation is required. Therefore, by excluding the defective beam and the beam having a large positional displacement from the used beam array, the maximum positional displacement amount can be reduced. Therefore, the maximum modulation amount of the irradiation amount can be reduced. In addition, for the exclusion of the defective beam and the beam having a large positional displacement, for example, control is performed so that the beam is cut off. Alternatively, for example, in the case where control so that the beam is cut off is not possible, it is sufficient to shield by arranging a shielding plate at a position corresponding to the above-described gap in each beam track of the multi-beam 20. Furthermore, the width dimension of the gap is not limited, but if it is set to a value obtained by dividing the block region dimension of the direction in which the gap is provided by the number of paths, it is difficult to cause waste of the drawing action, and thus is preferable.

[0116] [Embodiment 5]

[0117] In Embodiments 1 to 3, the configuration for the purpose of mainly reducing the maximum modulation amount by reducing the positional displacement amount generated at the boundary when the beam array regions 10 are connected to each other is described, but in Embodiment 5, the configuration in which the positional displacement amount inside the beam array region 10 can also be reduced is described. Hereinafter, points not specifically described are the same as in Embodiment 3.

[0118] Figure 19 is a conceptual diagram showing the configuration of the drawing apparatus of Embodiment 5. In Figure 1 , except that a bit map allocation section 60 and a bit map selection section 62 are further added in the control computer 110, it is the same as Figure 20 .

[0119] Each of the "to" parts such as the rasterizing section 50, the dose map creating section 52, the position offset map creating section 54, the block region generating section 56, the dose map creating section 58, the modulation rate calculating section 59, the bit map assigning section 60, the bit map selecting section 62, the irradiation time calculating section 72, and the drawing control section 74 has a processing circuit. The above processing circuit includes, for example, a circuit, a computer, a processor, a circuit substrate, a quantum circuit, or a semiconductor device. Each of the "to" parts can use a common processing circuit (the same processing circuit), or can use different processing circuits (separate processing circuits). Information input and output to and from the rasterizing section 50, the dose map creating section 52, the position offset map creating section 54, the block region generating section 56, the dose map creating section 58, the modulation rate calculating section 59, the bit map assigning section 60, the bit map selecting section 62, the irradiation time calculating section 72, and the drawing control section 74, and information in the calculation are stored in the memory 112 each time.

[0120] Figure 20 is a flowchart showing the main part process of the drawing method of Embodiment 5. In Figure 9 , the same as Embodiment 4 is followed except that a plurality of bit maps shifted in sub-pixel units are generated in the rasterizing process (S110), and a bit map assigning process (S106) and a bit map selecting process (S107) are added between the position offset measuring process (S104) and the modulation rate calculating process (S108). Figure 16

[0121] The contents of each of the block region generating process (S102) and the position offset measuring process (S104) are the same as Embodiment 3. In the block region generating process (S102), for example, the four block regions 16, 17, 18, and 19 shown in Figure 21 are generated.

[0122] ​By the operation processing in the rasterizing process (S110), the bit map data of the reference grid of, for example, each bar region 32 which defines the pattern area density p' within each pixel 36 is generated. In the case where the multiple drawing is performed while shifting the position of the bar region 32, in the rasterizing process (S110), the bit map data of the reference grid is generated for each bar layer 1, 2. In the case where the multiple drawing is performed without shifting the position of the bar region 32, the bar layers are the same, and therefore, only one kind of bit map data of the reference grid needs to be generated in the rasterizing process (S110). In Embodiment 5, as in Embodiment 3, both the multiple drawing performed without shifting the position of the bar region 32 and the multiple drawing performed while shifting the position of the bar region 32 are performed, and therefore, the bit map data of the reference grid is generated for each bar layer 1, 2. For example, the bit map data of the reference grid is generated for each bar layer 1, 2. The bar layer 2 is applied to the block regions 16, 17 on the upper stage side of the beam array region 10, for example. The bar layer 1 is applied to the block regions 18, 19 on the lower stage side of the beam array region 10, for example.

[0123] Here, the rasterizing section 50 makes at least one bit map data in which the grid positions of the pixels which represent the bit map data of each reference grid are shifted by the sub-pixel unit, in addition to the above-described bit map data of the reference grid. If there are a plurality of bar layers, it is preferable to make at least one bit map data in which the shift processing is performed for each bar layer. It can also be the case where the number of bar layers is larger than the number of bit map data.

[0124] Figure 21 is a drawing which shows an example of the bit map of Embodiment 5. In Figure 21 In the example of (a) of FIG. 10, the bit map data of the reference which is generated at the reference position in the rasterizing process (S110), and the bit map data which is constituted of grids in which the reference position is shifted by an amount of +5 nm in the x and y directions, respectively, by the sub-pixel, are shown. In Figure 21 In (b) of FIG. 10, the bit map data 40 of the reference in which the center positions of each pixel (control grid 27) are represented by the intersection points of the grid lines, and the bit map data 42 of the sub-pixel shift are shown. The intersection points of the solid lines become the target positions of the beam in the bit map data 40 of the reference, and the intersection points of the dotted lines become the target positions of the beam in the bit map data 42 of the sub-pixel shift. In Figure 22In (c), the center position of each pixel is represented as the target position of the beam. Assuming that when the beam, based on the pattern area density ρ' defined in the control grid 27a on the bit mapping data 40, is irradiated onto the sample surface, the irradiation position 39 is offset by L1 from the position of the control grid 27a. In this case, by using bit mapping data 42 shifted in the position offset direction instead of bit mapping data 40, the position offset between the irradiation position 39 and the control grid 27b when actually irradiated onto the sample surface can be made smaller than L1 by L2. Here, the position relationship in the x-direction is used, but it is not limited to this; it can also be reduced in the distance of the oblique offset. The pattern area density ρ' defined in the control grid 27b is defined as the shifted value; therefore, the position offset of the beam's irradiation position can be reduced, and the position offset of the pattern can be reduced accordingly. Therefore, in Embodiment 5, data processing is performed using bit mapping data that reduces the position offset for each block region.

[0125] As part of the bit mapping allocation process (S106), the bit mapping allocation unit 60 (bit mapping allocation processing unit) allocates multiple bit mapping data for each block region, each with a different reference position for the pattern drawn in the strip region 32. For example, it allocates bit mapping data with an unshifted (0, 0) reference position, bit mapping data shifted by (+5nm, +5nm), bit mapping data shifted by (+5nm, -5nm), bit mapping data shifted by (-5nm, +5nm), and bit mapping data shifted by (-5nm, -5nm) for each block region.

[0126] As a bit mapping selection process (S107), the bit mapping selection unit 62 selects the bit mapping data with the smallest maximum position offset from multiple bit mapping data with different assigned reference positions for each block region.

[0127] Figure 22 This is a diagram illustrating an example of the range of positional offsets for each block region in Implementation Method 5. Figure 22In the example of (a) of FIG. 10, the range of the positional shift of each block region 16, 17, 18, 19 is shown in a case where the positional shift of the entire beam array region 10 is in the range of -10 nm to +10 nm. For example, in the block region 16 of the region A3, the positional shift is generated in the range of -10 nm to 0 nm in the x direction and in the range of -10 nm to 0 nm in the y direction. For example, in the block region 17 of the region B3, the positional shift is generated in the range of -10 nm to 0 nm in the x direction and in the range of 0 nm to +10 nm in the y direction. For example, in the block region 18 of the region C3, the positional shift is generated in the range of 0 nm to +10 nm in the x direction and in the range of -10 nm to 0 nm in the y direction. For example, in the block region 19 of the region D3, the positional shift is generated in the range of 0 nm to +10 nm in the x direction and in the range of 0 nm to +10 nm in the y direction.

[0128] Therefore, in the block region 16 of the region A3, by selecting the bit map data shifted by (-5 nm, -5 nm), as shown in (b) of FIG. 10, it is possible to adjust the positional shift to the range of -5 nm to +5 nm in the x direction and the range of -5 nm to +5 nm in the y direction. Therefore, it is possible to reduce the maximum positional shift amount from 10 nm to 5 nm. Figure 22

[0129] Further, in the block region 17 of the region B3, by selecting the bit map data shifted by (-5 nm, +5 nm), as shown in (b) of FIG. 10, it is possible to adjust the positional shift to the range of -5 nm to +5 nm in the x direction and the range of -5 nm to +5 nm in the y direction. Therefore, it is possible to reduce the maximum positional shift amount from 10 nm to 5 nm. Figure 22

[0130] Further, in the block region 18 of the region C3, by selecting the bit map data shifted by (+5 nm, -5 nm), as shown in (b) of FIG. 10, it is possible to adjust the positional shift to the range of -5 nm to +5 nm in the x direction and the range of -5 nm to +5 nm in the y direction. Therefore, it is possible to reduce the maximum positional shift amount from 10 nm to 5 nm. Figure 22

[0131] Further, in the block region 19 of the region D3, by selecting the bit map data shifted by (+5 nm, +5 nm), as shown in (b) of FIG. 10, it is possible to adjust the positional shift to the range of -5 nm to +5 nm in the x direction and the range of -5 nm to +5 nm in the y direction. Therefore, it is possible to reduce the maximum positional shift amount from 10 nm to 5 nm. Figure 13

[0132] ​​​​As the modulation rate operation process (S108), the modulation rate operation section 59 (correction amount operation section) operates the modulation rate of the irradiation amount (dose) of each beam that is the correction amount of each beam for each of the plurality of block regions 16, 17, 18, 19 so that the position shift of the pattern drawn by the plurality of beams responsible for the beam irradiation within the block region is corrected in the case where the same block regions are connected to each other and the strip-shaped region 32 is drawn so as to overlap the sample 101. At this time, the modulation rate is operated using the position shift amount that is made smaller according to the selected bit map data.

[0133] By using the bit map data after the shift processing, the maximum position shift amount can be reduced, and thus the maximum position shift amount that occurs at the boundary position in the case where the same block regions are connected to each other can be further reduced.

[0134] The content of the dose operation process (S116) is the same as that of Embodiment 1. However, for each block region, the dose map is created using the selected bit map data. The content of the dose operation process (S120) and the irradiation time operation process (S122) of each block path is the same as that of Embodiment 1. The content of the multiple drawing process (S124) is the same as that of Embodiment 3.

[0135] Here, in the above example, both the multiple drawing performed without shifting the position of the strip-shaped region 32 and the multiple drawing performed while shifting the position of the strip-shaped region 32 are implemented. Also, in this case, the configuration in which the position shift amount of each block region is reduced using the bit map after the shift is explained. However, the application of the bit map after the shift is not limited to this. For example, as explained in Embodiment 1, in the case where the multiple drawing performed without shifting the position of the strip-shaped region 32 is performed for the plurality of block regions 12, 13 in which the beam array region 10 is divided in the x direction (division based on the longitudinal division line), the bit map after the shift can be used to reduce the position shift amount of each block region. Or, as explained in Embodiment 2, in the case where the multiple drawing performed while shifting the position of the strip-shaped region 32 is performed for the plurality of block regions 14, 15 in which the beam array region 10 is divided in the y direction (division based on the lateral division line), the bit map after the shift can be used to reduce the position shift amount of each block region. Or, it can be applied to Embodiment 4.

[0136] Alternatively, for the case where the beam array region 10 is divided in the x direction (division based on the longitudinal division line) and the case where the beam array region 10 is divided in the y direction (division based on the lateral division line), a block group can also be constituted by the block regions 16, 18 and a block group can also be constituted by the block regions 17, 19. Then, multiple drawing can also be performed in such a manner that the same block groups are connected to each other and the strip-shaped region 32 of the sample 101 is overlapped without shifting the position of the strip-shaped region 32. In the case where such multiple drawing is performed, the position offset amount of each block region can also be reduced using the shifted bit map. Alternatively, a block group can also be constituted by the block regions 16, 17 and a block group can also be constituted by the block regions 18, 19. Then, multiple drawing can also be performed in such a manner that the same block groups are connected to each other and the strip-shaped region 32 of the sample 101 is overlapped while shifting the position of the strip-shaped region 32. In the case where such multiple drawing is performed, the position offset amount of each block region can also be reduced using the shifted bit map.

[0137] The embodiments have been described above with reference to specific examples. However, the present application is not limited to these specific examples. In the above examples, the case where the irradiation time for each beam of the multi-beam 20 is controlled individually for each beam within the maximum irradiation time Ttr for the one-time emission amount has been described. However, this is not limiting. For example, the maximum irradiation time Ttr for the one-time emission amount can be divided into a plurality of sub-emissions having different irradiation times. Then, for each beam, a combination of sub-emissions can be selected from the plurality of sub-emissions so as to become the irradiation time for the one-time emission amount. Then, it is also appropriate to control the irradiation time for the one-time emission amount for each beam by continuously irradiating the selected combination of sub-emissions with the same beam with respect to the same pixel.

[0138] Further, in the above examples, the case where a 10-bit control signal is input for the control of each control circuit 41 has been described, but the number of bits can be appropriately set. For example, a 2-bit or 3-bit to 9-bit control signal can also be used. In addition, a control signal of 11 bits or more can also be used.

[0139] Further, for each block region, in the case where the correction amount for each beam is calculated, each block region can also be made to be associated to calculate the correction amount in a state where the same block regions are connected to each other.

[0140] Further, in the case where the block regions are divided in the y direction as in the example of Figure 10 In the case where the block regions are divided in the y direction as in the example of ​In the case of division in the x direction as shown in the example, for example, it is preferable to make the width (x direction dimension) of each block region equal.

[0141] Further, parts not directly required in the explanation of the present application, such as the device configuration, control method, etc., are omitted from the description, but a device configuration, control method, etc., as required can be appropriately selected for use. For example, the control section configuration of the control device 100 is omitted from the description, but of course a control section configuration as required can be appropriately selected for use.

[0142] Further, all multi-charged particle beam drawing devices and multi-charged particle beam drawing methods provided with the elements of the present application and which can be appropriately designed and changed by those skilled in the art are included within the scope of the present application.

[0143] Industrial applicability

[0144] Concerning a multi-charged particle beam drawing device and a multi-charged particle beam drawing method, for example, a method can be used to reduce the range of correction amounts for correcting positional displacement of a pattern caused by multi-beam drawing.

[0145] Explanation of symbols

[0146] 10: beam array region; 12, 13, 14, 15, 16, 17, 18, 19: block region; 20: multi-beam; 22: aperture; 24: control electrode; 25: through aperture; 26: counter electrode; 27: control grid; 28: pixel; 29: sub-exposure region; 30: drawing region; 32: strip region; 31: substrate; 33: support table; 34: exposure region; 36: pixel; 39: exposure position; 40, 42: bit map data; 41: control circuit; 50: gridding section; 52: dose map making section; 54: positional displacement map making section; 56: block region generating section; 58: dose map making section; 59: modulation rate calculating section; 60: bit map assigning section; 62: bit map selecting section; 72: exposure time calculating section; 74: drawing control section; 100: drawing device; 101: sample; 102: electron barrel; 103: drawing chamber; 105: XY stage; 110: control computer; 112: memory; 130: deflection control circuit; 132, 134: DAC amplifier; 139: stage position detector; 140, 142, 144: storage device; 150: drawing mechanism; 160: control system circuit; 200: electron beam; 201: electron gun; 202: illumination lens; 203: shaped aperture array substrate; 204: blanking aperture array mechanism; 205: reduction lens; 206: limiting aperture substrate; 207: objective lens; 208, 209: deflector; 210: mirror; 330: membrane region; 332: outer peripheral region.

Claims

1. A multi charged-particle beam drawing device, characterized in that, Possessing: a beam forming mechanism that forms a plurality of charged particle beams; a block region generating circuit that generates a plurality of block regions from an irradiation region of the plurality of charged particle beams that is composed of each small region surrounded between each beam of the plurality of charged particle beams and other beams adjacent thereto; and a drawing mechanism that draws, using the plurality of charged particle beams, the block regions to be drawn in each of a plurality of drawing processes in a manner in which irradiation of each block region is performed at least once in each of the plurality of drawing processes and in a manner in which the irradiation of each block region is not repeated in each of the plurality of drawing processes, using one of the plurality of block regions in each of the plurality of drawing processes, thereby performing the plurality of drawing processes.

2. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the plurality of charged particle beam drawing apparatus further possesses a correction amount operation circuit that operates, for each of the plurality of block regions, a correction amount for each beam for correcting a positional shift of a pattern drawn by a plurality of beams responsible for irradiation of the beam in the block region in a case where drawing is performed in a manner in which the irradiation of the block region is performed in a manner in which the drawing region of the sample is not repeated, the drawing mechanism draws, using the plurality of charged particle beams corrected using the correction amount for each block region, the block regions to be drawn in each of the plurality of drawing processes in a manner in which irradiation of each block region is performed at least once in each of the plurality of drawing processes and in a manner in which the irradiation of each block region is not repeated in each of the plurality of drawing processes, thereby performing the plurality of drawing processes.

3. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the irradiation region is a rectangular region surrounded by a side having a value obtained by multiplying the number of beams in a first direction of the plurality of charged particle beams by the beam interval in the first direction as a first direction dimension, and a side having a value obtained by multiplying the number of beams in a second direction orthogonal to the first direction by the beam interval in the second direction as a second direction dimension.

4. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the plurality of charged particle beam drawing apparatus further possesses a bit map allocation processing section that allocates, for each of the block regions, a plurality of bit map data having different reference positions for a pattern drawn in the drawing region.

5. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the number of block regions of the plurality of block regions is determined using the number of the plurality of drawing processes of the predetermined plurality of drawing processes performed while not shifting the position of the drawing region.

6. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the number of block regions of the plurality of block regions is determined using the number of the plurality of drawing processes of the predetermined plurality of drawing processes performed while shifting the position of the drawing region.

7. The plurality of charged particle beam drawing apparatus according to claim 1, characterized in that: the plurality of block regions are generated in a manner in which a gap is generated between the block regions.

8. A multi charged particle beam drawing method characterized by, forming a multi charged particle beam, generating a plurality of block regions from an irradiation region of the multi charged particle beam which is composed of combining each small region surrounded between each beam of the multi charged particle beam and other beams adjacent thereto, drawing the block regions to be drawn in each of the plurality of drawing processes connected to each other using the multi charged particle beam in a manner that irradiation of each block region is performed at least in any one of the plurality of drawing processes and the drawing region of the sample is covered by the irradiation of the block region in each of the plurality of drawing processes without repetition using one of the plurality of block regions in each of the plurality of drawing processes, thereby performing the plurality of drawing processes.

9. The multi charged particle beam drawing method according to claim 8, characterized by, calculating, for each of the plurality of block regions, a correction amount for each beam for correcting a positional shift of a pattern drawn by a plurality of beams responsible for the irradiation of the beams in the block region in a case where the drawing is performed in a manner that the irradiation of the block region covers the drawing region of the sample without repetition, performing the plurality of drawing processes using the multi charged particle beam corrected using the correction amount for each block region in a manner that irradiation of each block region is performed at least in any one of the plurality of drawing processes and the drawing region of the sample is covered by the irradiation of the block region in each of the plurality of drawing processes without repetition using one of the plurality of block regions in each of the plurality of drawing processes, thereby performing the plurality of drawing processes.

10. The multi charged particle beam drawing method according to claim 8, characterized by, the irradiation region is a rectangular region surrounded by a side having a value obtained by multiplying a number of beams in a first direction of the multi charged particle beam by a beam interval in the first direction as a first direction dimension and a side having a value obtained by multiplying a number of beams in a second direction orthogonal to the first direction by a beam interval in the second direction as a second direction dimension.

Images