OLED short circuit prediction circuit, method and organic light emitting device

Abstract

This invention discloses an OLED short-circuit prediction circuit, method, and organic light-emitting device. The circuit includes: an organic light-emitting diode (OLED), an anti-reverse current diode, an inductor, a first switching transistor, and a current-limiting resistor; a driver chip connected to the control terminal of the first switching transistor, used to drive the first switching transistor to conduct to control the OLED in an on state, or to drive the first switching transistor to turn off to control the OLED in an off state; the driver chip is also used to collect the voltage at a sampling point when the OLED changes from an on state to an off state, and when the voltage at the sampling point is the same as the voltage of the power supply, to obtain the leakage current at the sampling point, so as to predict the short-circuit probability of the OLED based on the leakage current and the short-circuit prediction curve. Therefore, by acquiring the leakage current of the OLED after each OLED is turned off, the short-circuit probability of the OLED can be predicted according to the short-circuit prediction curve, providing timely information to personnel for rapid repair or replacement preparation.

Description

Technical Field

[0001] This invention relates to the field of optical technology, and more particularly to an OLED short-circuit prediction circuit, method, and organic light-emitting device. Background Technology

[0002] Currently, OLEDs, due to their large light-emitting surface, have a high probability of short circuits when subjected to external forces or high temperatures. Once a short circuit occurs, the LED panel may fail to light up or burn out, posing a danger.

[0003] Intelligent scenarios not only need to collect information on the quality of light sources, but also on their lifespan. The current problem is that there is no predictive solution in the relevant technologies to predict when an OLED will short-circuit. Summary of the Invention

[0004] This invention provides an OLED short-circuit prediction circuit, method, and organic light-emitting device to predict in a timely manner when an OLED will short-circuit, preparing for OLED replacement or repair and avoiding potential dangers.

[0005] According to one aspect of the present invention, an OLED short-circuit prediction circuit is provided, comprising:

[0006] Organic light-emitting diode, anti-reverse diode, inductor, first switching transistor, and current-limiting resistor;

[0007] In this configuration, the cathode of the organic light-emitting diode (OLED) is connected in series with the inductor, the first switching transistor, and the current-limiting resistor, respectively; the anode of the OLED is connected to the power supply; and the other end of the current-limiting resistor is grounded. The cathode of the anti-reverse current diode is connected to the anode of the OLED, and the anode of the anti-reverse current diode is connected to a sampling point. The sampling point is one of the points on the connection line between the inductor and the first switching transistor.

[0008] The driver chip is connected to the control terminal of the first switching transistor and is used to drive the first switching transistor to conduct in order to control the organic light-emitting diode (OLED) to be in an on state, or to drive the first switching transistor to turn off in order to control the OLED to be in an off state. The driver chip is also used to collect the voltage of the sampling point when the OLED changes from an on state to an off state, and to obtain the leakage current of the sampling point when the voltage of the sampling point is the same as the voltage of the power supply, so as to predict the short circuit probability of the OLED based on the leakage current and the short circuit prediction curve.

[0009] Optionally, the OLED short-circuit prediction circuit further includes:

[0010] The second resistor is connected in parallel with the anti-reverse diode, and the resistance value of the second resistor is greater than the internal resistance of the organic light-emitting diode.

[0011] Optionally, the OLED short-circuit prediction circuit further includes:

[0012] The first capacitor is connected in parallel across the two ends of the organic light-emitting diode.

[0013] Optionally, the OLED short-circuit prediction circuit further includes:

[0014] The second switching transistor is located in the circuit between the first switching transistor and the current-limiting resistor. The driving chip is also connected to the control terminal of the second switching transistor and is used to drive the two switching transistors to alternately turn on and off when the organic light-emitting diode is lit to adjust the luminous brightness of the organic light-emitting diode.

[0015] Optionally, the OLED short-circuit prediction circuit further includes:

[0016] An attenuator, one end of which is connected to the sampling point, and the other end of which is connected to the driver chip.

[0017] According to a second aspect of the present invention, an OLED short-circuit prediction method is proposed, implemented based on an OLED short-circuit prediction circuit as described in any embodiment of the present invention, comprising:

[0018] The first switch is turned on to control the organic light-emitting diode to be in the lit state;

[0019] The first switch is turned off, and the organic light-emitting diode is switched from the lit state to the off state.

[0020] Collect the voltage at the sampling points;

[0021] Determine whether the voltage at the sampling point is the same as the voltage of the power supply. If yes, obtain the leakage current at the sampling point. If no, return to the previous step to continue sampling.

[0022] The short-circuit probability of the organic light-emitting diode is predicted based on the leakage current and short-circuit prediction curve.

[0023] Optionally, obtaining the leakage current at the sampling point includes:

[0024] The duration of the voltage at the sampling point changing from the initial voltage to the voltage of the power supply is obtained;

[0025] The internal resistance of the organic light-emitting diode is obtained based on the initial voltage, the voltage of the power supply, the duration, and the capacitance value of the organic light-emitting diode.

[0026] The leakage current at the sampling point is obtained based on the voltage of the power supply and the internal resistance of the organic light-emitting diode.

[0027] Optionally, the initial voltage V0, the power supply voltage V, the duration t, the capacitance C of the organic light-emitting diode, the internal resistance R of the organic light-emitting diode, and the leakage current I at the sampling point satisfy the following formula:

[0028] V = V0exp(-t / RC), I = V / R.

[0029] Optionally, the short-circuit prediction curve is obtained through calibration.

[0030] According to three aspects of the present invention, an organic light-emitting device is provided, comprising an OLED short-circuit prediction circuit as described in any embodiment of the present invention.

[0031] According to an embodiment of the present invention, an OLED short-circuit prediction circuit, method, and organic light-emitting device are provided. The circuit includes: an organic light-emitting diode (OLED), an anti-reverse current diode, an inductor, a first switching transistor, and a current-limiting resistor. The cathode of the OLED is connected in series with the inductor, the first switching transistor, and the current-limiting resistor. The anode of the OLED is connected to a power supply, and the other end of the current-limiting resistor is grounded. The cathode of the anti-reverse current diode is connected to the anode of the OLED, and the anode of the anti-reverse current diode is connected to a sampling point. The sampling point is one of the points on the connection line between the inductor and the first switching transistor. A driving chip is connected to the control terminal of the first switching transistor and is used to drive the first switching transistor to conduct to control the OLED to be in an on state, or to drive the first switching transistor to turn off to control the OLED to be in an off state. The driving chip is also used to collect the voltage of the sampling point when the OLED changes from an on state to an off state, and when the voltage of the sampling point is the same as the voltage of the power supply, to obtain the leakage current of the sampling point, so as to predict the short-circuit probability of the OLED based on the leakage current and the short-circuit prediction curve. Therefore, by acquiring the leakage current of the OLED after each OLED is turned off, the short-circuit probability of the OLED can be predicted based on the short-circuit prediction curve, and the information can be provided to the staff in a timely manner for reference, so as to prepare for repair or replacement.

[0032] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a circuit diagram of an OLED short-circuit prediction circuit proposed in an embodiment of the present invention;

[0035] Figure 2 This is a circuit diagram of another OLED short-circuit prediction circuit proposed in an embodiment of the present invention;

[0036] Figure 3 This is a circuit diagram of another OLED short-circuit prediction circuit proposed in an embodiment of the present invention;

[0037] Figure 4 This is a circuit diagram of another OLED short-circuit prediction circuit proposed in an embodiment of the present invention;

[0038] Figure 5 This is a circuit diagram of another OLED short-circuit prediction circuit proposed in an embodiment of the present invention;

[0039] Figure 6 This is a flowchart of an OLED short-circuit prediction method proposed in an embodiment of the present invention. Detailed Implementation

[0040] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0041] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0042] Figure 1 This is a circuit diagram of an OLED short-circuit prediction circuit proposed in an embodiment of the present invention. Figure 1 As shown, the OLED short-circuit prediction circuit includes:

[0043] Organic light-emitting diode D1, anti-reverse diode D2, inductor L, first switching transistor Q1, and current-limiting resistor R1;

[0044] In this configuration, the cathode of the organic light-emitting diode D1 is connected in series with the inductor L, the first switch Q1, and the current-limiting resistor R1. The anode of the organic light-emitting diode D1 is connected to the power supply, and the other end of the current-limiting resistor R1 is grounded. The cathode of the anti-reverse current diode D2 is connected to the anode of the organic light-emitting diode D1, and the anode of the anti-reverse current diode D2 is connected to sampling point A. Sampling point A is one of the points on the connection line between the inductor L and the first switch Q1.

[0045] The driver chip 100 is connected to the control terminal of the first switch Q1 and is used to drive the first switch Q1 to conduct in order to control the organic light-emitting diode D1 to be in the lit state, or to drive the first switch Q1 to turn off in order to control the organic light-emitting diode D1 to be in the off state. The driver chip 100 is also used to collect the voltage of sampling point A when the organic light-emitting diode changes from the lit state to the off state, and to obtain the leakage current of sampling point A when the voltage of sampling point A is the same as the voltage VCC of the power supply, so as to predict the short circuit probability of organic light-emitting diode D1 based on the leakage current and the short circuit prediction curve.

[0046] Understandably, the first switching transistor Q1 can be an NMOS transistor. When the driver chip 100 outputs a high level, the first switching transistor Q1 conducts, connecting the circuit between VCC and GND, thus causing the organic light-emitting diode D1 to emit light. When the driver chip 100 outputs a low level, the first switching transistor Q1 turns off, disconnecting the circuit between VCC and GND, thus turning off the organic light-emitting diode D1. The anti-reverse current diode D2 prevents reverse current from flowing to VCC when the voltage of A is higher than VCC, thus protecting the circuit.

[0047] In one embodiment, when the organic light-emitting diode (OLED) D1 changes from an on state to an off state, the driver chip 100 can sample the voltage at point A. Since the OLED D1 has capacitive characteristics, the charge stored in the capacitor will discharge. After the discharge is complete, the voltage at point A will be the same as VCC. At this time, the leakage current of the OLED D1 can be calculated based on the voltage at point A. Finally, the short-circuit probability of the OLED D1 is predicted based on the leakage current and short-circuit prediction curve.

[0048] It should be noted that the short-circuit prediction curve can be calibrated in advance. For example, with N test samples, after lighting all N samples and then turning them off, leakage current is detected using the method described above, and the time is recorded. If none of the lamps are short-circuited at this point, the short-circuit probability is 0. After multiple lighting and turning-off cycles, M samples may experience short circuits. The short-circuit probability can then be calculated as M / N. If all lamps eventually short-circuit, the short-circuit probability is 100%. Furthermore, through large-scale experiments and tests, the curve of leakage current versus short-circuit probability can be calibrated. Thus, in practical applications, the probability of leakage current can be determined by testing the leakage current.

[0049] Understandably, the leakage current can be obtained using the formulas V = V0exp(-t / RC) and I = V / R, where V0 is the initial voltage at which the OLED D1 changes from the lit state to the off state, V is VCC, R is the internal resistance of the OLED D1, C is the capacitance of the OLED D1, and t is the time it takes for V0 to change to V. Then, the internal resistance R of the OLED D1 can be calculated using V = V0exp(-t / RC), and the leakage current can be calculated. Finally, the short-circuit probability can be read from the short-circuit probability curve.

[0050] For example, when the capacitance of the organic light-emitting diode D1 is 100nF and the resistance of the second resistor R2 is 50MΩ, if the leakage current is greater than 20uA, the probability of the lamp sheet short-circuiting within 30 days can reach more than 10%, and if the leakage current is greater than 1000uA, the probability of the lamp sheet short-circuiting within 3 days can reach more than 50%. This allows for the prediction of short-circuit conditions.

[0051] Optional, such as Figure 2 As shown, the OLED short-circuit prediction circuit also includes:

[0052] The second resistor R2 is connected in parallel with the anti-reverse diode D2, and the resistance of the second resistor R2 is greater than the internal resistance of the organic light-emitting diode D1. Therefore, when the second resistor R2 and the organic light-emitting diode D1 are connected in parallel, the overall circuit resistance is reduced, thereby increasing the leakage current value, which is easily detected by the driver chip 100. For example, the resistance of the second resistor R2 can be in the MΩ range (preferably 50MΩ).

[0053] Optional, such as Figure 3 As shown, the OLED short-circuit prediction circuit also includes:

[0054] A first capacitor, C1, is connected in parallel across the organic light-emitting diode (OLED) D1. Therefore, by using the first capacitor C1, the OLED D1 can be charged while emitting light, and charged in parallel with the OLED D1 after it turns off, increasing the leakage current output and making it easier for the driver chip 100 to detect. Additionally, adding the first capacitor C1 can also reduce the flickering of the OLED D1.

[0055] Optional, such as Figure 4 As shown, the OLED short-circuit prediction circuit also includes:

[0056] The second switch Q2 is located in the circuit between the first switch Q1 and the current-limiting resistor R1. The driver chip 100 is also connected to the control terminal of the second switch Q2, and is used to drive the two switches Q2 to alternately turn on and off when the organic light-emitting diode D1 is lit, so as to adjust the light-emitting brightness of the organic light-emitting diode D1.

[0057] It is understood that the second switch Q2 can be an NMOS transistor. The driver chip 100 outputs a high level to the control terminals of the first switch Q1 and the second switch Q2, controlling the first switch Q1 and the second switch Q2 to conduct. When the organic light-emitting diode (OLED) D1 is emitting light, the driver chip 100 can also adjust the brightness of the OLED D1 by adjusting the duty cycle of the second switch Q2. The brightness of the OLED D1 can be measured at the point between the second switch Q2 and the current-limiting resistor R1; a larger current results in a larger brightness of the OLED D1, and a smaller current results in a smaller brightness. The use of the first switch Q1 and the second switch Q2 facilitates the adjustment of the OLED D1's emission mode and improves circuit stability. In other embodiments, the first switch Q1 and the second switch Q2 can also be PMOS transistors, allowing for adaptive circuit changes. Furthermore, in another embodiment, the vertical positions of the first switch Q1 and the second switch Q2 can be interchanged.

[0058] Optional, such as Figure 5 As shown, the OLED short-circuit prediction circuit also includes:

[0059] Attenuator 200 is connected at one end to sampling point A and at the other end to driver chip 100. Attenuator 200 can be a high-input-resistance operational amplifier. After the voltage at point A is acquired, it passes through attenuator 200 and is connected to the ADC pin of driver chip 100 to protect driver chip 100. Attenuator 200 can be a 1 / 8 attenuator.

[0060] Figure 6 This is a flowchart of the OLED short-circuit prediction method proposed in an embodiment of the present invention. This method is implemented based on the OLED short-circuit prediction circuit of any embodiment of the present invention, such as... Figure 6 As shown, it includes:

[0061] S101 controls the first switching transistor to turn on, so as to control the organic light-emitting diode to be in the lit state;

[0062] S102 controls the first switch to turn off, and controls the organic light-emitting diode to switch from the lit state to the off state;

[0063] S103, collects the voltage at the sampling point;

[0064] S104, determine whether the voltage at the sampling point is the same as the voltage of the power supply. If yes, obtain the leakage current at the sampling point. If no, return to the previous step to continue sampling.

[0065] S105 predicts the short-circuit probability of an organic light-emitting diode (OLED) based on leakage current and short-circuit prediction curves.

[0066] Understandably, the first switching transistor Q1 can be an NMOS transistor. When the driver chip 100 outputs a high level, the first switching transistor Q1 conducts, connecting the circuit between VCC and GND, thus causing the organic light-emitting diode D1 to emit light. When the driver chip 100 outputs a low level, the first switching transistor Q1 turns off, disconnecting the circuit between VCC and GND, thus turning off the organic light-emitting diode D1. When the organic light-emitting diode D1 changes from an on state to an off state, the driver chip 100 can sample the voltage at point A. Since the organic light-emitting diode D1 has capacitive characteristics, the charge stored in the capacitor will discharge. After the discharge is complete, the voltage at point A is the same as VCC. At this time, the leakage current of the organic light-emitting diode D1 can be calculated based on the voltage at point A. Finally, the short-circuit probability of the organic light-emitting diode D1 can be predicted based on the leakage current and short-circuit prediction curve.

[0067] Optionally, S104 acquires the leakage current at the sampling point including:

[0068] The duration of the voltage change at the sampling point from the initial voltage to the voltage of the power supply is obtained;

[0069] The internal resistance of the organic light-emitting diode (OLED) is obtained based on the initial voltage, the voltage of the power supply, the duration, and the capacitance value of the OLED.

[0070] The leakage current at the sampling point is obtained based on the voltage of the power supply and the internal resistance of the organic light-emitting diode.

[0071] Optionally, the initial voltage V0, the power supply voltage V, the duration t, the capacitance C of the organic light-emitting diode (OLED), the internal resistance R of the OLED, and the leakage current I at the sampling point satisfy the following formula:

[0072] V = V0exp(-t / RC), I = V / R.

[0073] Optionally, the short-circuit prediction curve is obtained through calibration.

[0074] The short-circuit prediction curve can be pre-calibrated. For example, with N test samples, after lighting all N samples and then turning them off, leakage current is detected using the method described above, and the time is recorded. If none of the lamps are short-circuited at this point, the short-circuit probability is 0. After multiple lighting and turning-off cycles, M samples may experience short circuits. The short-circuit probability can then be calculated as M / N. If all lamps eventually short-circuit, the short-circuit probability is 100%. Furthermore, through large-scale experiments and tests, the curve of leakage current versus short-circuit probability can be calibrated. Thus, in practical applications, the probability of leakage current can be determined by testing the leakage current.

[0075] Understandably, the leakage current can be obtained using the formulas V = V0exp(-t / RC) and I = V / R, where V0 is the initial voltage at which the OLED D1 changes from the lit state to the off state, V is VCC, R is the internal resistance of the OLED D1, C is the capacitance of the OLED D1, and t is the time it takes for V0 to change to V. Then, the internal resistance R of the OLED D1 can be calculated using V = V0exp(-t / RC), and the leakage current can be calculated. Finally, the short-circuit probability can be read from the short-circuit probability curve.

[0076] For example, when the capacitance of the organic light-emitting diode D1 is 100nF and the resistance of the second resistor R2 is 50MΩ, if the leakage current is greater than 20uA, the probability of the lamp sheet short-circuiting within 30 days can reach more than 10%, and if the leakage current is greater than 1000uA, the probability of the lamp sheet short-circuiting within 3 days can reach more than 50%. This allows for the prediction of short-circuit conditions.

[0077] An organic light-emitting device is also proposed according to an embodiment of the present invention, including the OLED short-circuit prediction circuit proposed in any embodiment of the present invention.

[0078] in, Figures 1 to 5 In this context, VSample represents voltage sampling, Switch represents the switching signal, GATE represents the gate signal, and CurrentSample represents current sampling.

[0079] In summary, according to embodiments of the present invention, an OLED short-circuit prediction circuit, method, and organic light-emitting device are provided. The circuit includes: an organic light-emitting diode (OLED), an anti-reverse current diode, an inductor, a first switching transistor, and a current-limiting resistor. The cathode of the OLED is connected in series with the inductor, the first switching transistor, and the current-limiting resistor. The anode of the OLED is connected to a power supply, and the other end of the current-limiting resistor is grounded. The cathode of the anti-reverse current diode is connected to the anode of the OLED, and the anode of the anti-reverse current diode is connected to a sampling point. The sampling point is one of the points on the connection line between the inductor and the first switching transistor. A driving chip is connected to the control terminal of the first switching transistor and is used to drive the first switching transistor to conduct to control the OLED to be in an on state, or to drive the first switching transistor to turn off to control the OLED to be in an off state. The driving chip is also used to collect the voltage at the sampling point when the OLED changes from an on state to an off state, and when the voltage at the sampling point is the same as the voltage of the power supply, to obtain the leakage current at the sampling point, so as to predict the short-circuit probability of the OLED based on the leakage current and the short-circuit prediction curve. Therefore, by acquiring the leakage current of the OLED after each OLED is turned off, the short-circuit probability of the OLED can be predicted based on the short-circuit prediction curve, and the information can be provided to the staff in a timely manner for reference, so as to prepare for repair or replacement.

[0080] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0081] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An OLED short-circuit prediction circuit, characterized in that, include: Organic light-emitting diode, anti-reverse diode, inductor, first switching transistor, and current-limiting resistor; In this configuration, the cathode of the organic light-emitting diode (OLED) is connected in series with the inductor, the first switching transistor, and the current-limiting resistor, respectively; the anode of the OLED is connected to the power supply; and the other end of the current-limiting resistor is grounded. The cathode of the anti-reverse current diode is connected to the anode of the OLED, and the anode of the anti-reverse current diode is connected to a sampling point. The sampling point is one of the points on the connection line between the inductor and the first switching transistor. The driver chip is connected to the control terminal of the first switching transistor and is used to drive the first switching transistor to conduct in order to control the organic light-emitting diode (OLED) to be in an on state, or to drive the first switching transistor to turn off in order to control the OLED to be in an off state. The driver chip is also used to collect the voltage of the sampling point when the OLED changes from an on state to an off state, and to obtain the leakage current of the sampling point when the voltage of the sampling point is the same as the voltage of the power supply, so as to predict the short circuit probability of the OLED based on the leakage current and the short circuit prediction curve. The process of obtaining the leakage current at the sampling point includes: The duration of the voltage at the sampling point changing from the initial voltage to the voltage of the power supply is obtained; The internal resistance of the organic light-emitting diode is obtained based on the initial voltage, the voltage of the power supply, the duration, and the capacitance value of the organic light-emitting diode. The leakage current at the sampling point is obtained based on the voltage of the power supply and the internal resistance of the organic light-emitting diode. The initial voltage V0, the power supply voltage V, the duration t, the capacitance C of the organic light-emitting diode, the internal resistance R of the organic light-emitting diode, and the leakage current I at the sampling point satisfy the following formula: V = V0exp(-t / RC), I = V / R.

2. The OLED short-circuit prediction circuit according to claim 1, characterized in that, Also includes: The second resistor is connected in parallel with the anti-reverse diode, and the resistance value of the second resistor is greater than the internal resistance of the organic light-emitting diode.

3. The OLED short-circuit prediction circuit according to claim 1, characterized in that, Also includes: The first capacitor is connected in parallel across the two ends of the organic light-emitting diode.

4. The OLED short-circuit prediction circuit according to claim 1, characterized in that, Also includes: The second switching transistor is located in the circuit between the first switching transistor and the current-limiting resistor. The driving chip is also connected to the control terminal of the second switching transistor and is used to drive the two switching transistors to alternately turn on and off when the organic light-emitting diode is lit to adjust the luminous brightness of the organic light-emitting diode.

5. The OLED short-circuit prediction circuit according to claim 1, characterized in that, Also includes: An attenuator, one end of which is connected to the sampling point, and the other end of which is connected to the driver chip.

6. A method for predicting short circuits in OLEDs, characterized in that, Based on the OLED short-circuit prediction circuit as described in any one of claims 1-5, including: The first switch is turned on to control the organic light-emitting diode to be in the lit state; The first switch is turned off, and the organic light-emitting diode is switched from the lit state to the off state. Collect the voltage at the sampling points; Determine whether the voltage at the sampling point is the same as the voltage of the power supply. If yes, obtain the leakage current at the sampling point. If no, return to the previous step to continue sampling. The short-circuit probability of the organic light-emitting diode is predicted based on the leakage current and short-circuit prediction curve.

7. The OLED short-circuit prediction method according to claim 6, characterized in that, Obtaining the leakage current at the sampling point includes: The duration of the voltage at the sampling point changing from the initial voltage to the voltage of the power supply is obtained; The internal resistance of the organic light-emitting diode is obtained based on the initial voltage, the voltage of the power supply, the duration, and the capacitance value of the organic light-emitting diode. The leakage current at the sampling point is obtained based on the voltage of the power supply and the internal resistance of the organic light-emitting diode.

8. The OLED short-circuit prediction method according to claim 7, characterized in that, The initial voltage V0, the power supply voltage V, the duration t, the capacitance C of the organic light-emitting diode, the internal resistance R of the organic light-emitting diode, and the leakage current I at the sampling point satisfy the following formula: V = V0exp(-t / RC), I = V / R.

9. The OLED short-circuit prediction method according to claim 6, characterized in that, The short-circuit prediction curve is obtained through calibration.

10. An organic light-emitting device, characterized in that, Includes the OLED short-circuit prediction circuit as described in any one of claims 1-5.

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