Room-temperature all-electrically controlled magnetic storage unit and memory based on all-two-dimensional materials

Abstract

Provided is a room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials, including a strong spin-orbit coupling van der Waals layer, a room-temperature van der Waals magnetic free layer, a van der Waals spacer layer, and a room-temperature van der Waals magnetic fixed layer, which are stacked from bottom to top; the strong spin-orbit coupling van der Waals layer is composed of a strong spin-orbit coupling two-dimensional material with a low-symmetry crystal structure, and generates an out-of-plane polarized spin current when an electrical signal is applied, driving the room-temperature van der Waals magnetic free layer to achieve directional pure electric control flipping without an external magnetic field; the room-temperature van der Waals magnetic free layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is controlled by the polarity of the electrical signal; the van der Waals spacer layer is composed of a two-dimensional van der Waals material with a semiconductor or insulator band gap and resistivity; the room-temperature van der Waals magnetic fixed layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is fixed and does not change with the polarity of the electrical signal. Also provided is a magnetic memory.

Description

Technical Field

[0001] The present disclosure relates to the technical fields of microelectronics and spintronics, and particularly to a room-temperature all-electrically-controlled magnetic storage unit and memory based on all-two-dimensional materials. Background Art

[0002] Compared with spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque magnetic random access memory (SOT-MRAM) has a higher writing speed and lower power consumption, and has a better application prospect. It is considered as the main writing method for the next-generation MRAM.

[0003] A typical magnetic tunnel junction (MTJ) device generally has a sandwich structure, that is, it is composed of upper and lower magnetic electrodes sandwiching a middle non-magnetic semiconductor or insulator barrier layer. Magnetic tunnel junction devices with a large tunneling magnetoresistance (TMR) are widely used in spintronics fields such as magnetic sensing, non-volatile magnetic random access memory, and programmable spin logic devices. Traditional magnetic tunnel junctions are usually composed of magnetic metal materials (such as Fe, Co, Ni, CoFeB and their alloys) combined by three-dimensional covalent bonds and non-magnetic wide-bandgap oxides (such as Al 2 O 3 , MgO). Currently, the development of magnetic tunnel junction devices based on traditional three-dimensional materials is restricted by the performance factors of the materials themselves. When forming a heterojunction between different three-dimensional materials, problems such as lattice matching, interdiffusion of atoms between interfaces, poor perpendicular magnetic anisotropy of magnetic electrodes, or the presence of pinhole effects in the middle barrier layer seriously limit the development of magnetic tunnel junctions based on traditional three-dimensional materials. Therefore, magnetic tunnel junction devices urgently need to find new materials with high interface quality. In addition, existing magnetic tunnel junction devices based on two-dimensional magnetic materials do not have tunneling magnetoresistance at room temperature and have poor temperature stability, failing to meet the application requirements. Summary of the Invention

[0004] (1) Technical Problems to be Solved

[0005] Based on the above problems, the present disclosure provides a room-temperature all-electrically-controlled magnetic storage unit and memory based on all-two-dimensional materials to alleviate problems such as interfacial lattice mismatch, low interfacial flatness, or interdiffusion of atoms between interfaces in magnetic tunnel junction devices based on bulk materials in the prior art, as well as technical problems such as the lack of tunneling magnetoresistance at room temperature and poor temperature stability in magnetic tunnel junctions based on existing two-dimensional materials.

[0006] (2) Technical Solutions

[0007] One aspect of the present disclosure provides a room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials, comprising: a strong spin-orbit coupling van der Waals layer, a room-temperature van der Waals magnetic free layer, a van der Waals spacer layer, and a room-temperature van der Waals magnetic fixed layer, which are stacked from bottom to top; wherein, the strong spin-orbit coupling van der Waals layer is composed of a two-dimensional material with strong spin-orbit coupling and a low-symmetry crystal structure. When an electrical signal is applied, the strong spin-orbit coupling van der Waals layer generates an out-of-plane polarized spin current, and the polarization direction is related to the polarity of the input electrical signal. The out-of-plane polarized spin current is used to drive the room-temperature van der Waals magnetic free layer to achieve directional pure electrically controlled flipping without an external magnetic field; the room-temperature van der Waals magnetic free layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is controlled by the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer; the van der Waals spacer layer is composed of a two-dimensional van der Waals material with a semiconductor bandgap and resistivity, or a two-dimensional van der Waals material with an insulator bandgap and resistivity; the room-temperature van der Waals magnetic fixed layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is fixed and does not change with the change of the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer.

[0008] According to an embodiment of the present disclosure, the magnetic storage unit further includes a van der Waals pinning layer, and the van der Waals pinning layer is disposed on the room-temperature van der Waals magnetic fixed layer, and the van der Waals pinning layer is composed of a room-temperature two-dimensional antiferromagnetic material.

[0009] According to an embodiment of the present disclosure, the preparation material of the strong spin-orbit coupling van der Waals layer is selected from two-dimensional WTe 2 、two-dimensional MoS 2 、two-dimensional PtTe 2 。

[0010] According to an embodiment of the present disclosure, the preparation materials of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer include two-dimensional Fe 3 GaTe 2 。

[0011] According to an embodiment of the present disclosure, the preparation materials of the van der Waals spacer layer are selected from two-dimensional hBN, two-dimensional GaSe, two-dimensional InSe, two-dimensional WSe 2 、two-dimensional WS 2 、two-dimensional MoTe 2 、two-dimensional MoSe 2 。

[0012] According to an embodiment of the present disclosure, the preparation material of the van der Waals pinning layer includes two-dimensional TaCoTe 2 。

[0013] According to the embodiments of the present disclosure, the thicknesses of the strong spin-orbit coupling van der Waals layer, the room-temperature van der Waals magnetic free layer, the van der Waals spacer layer, the room-temperature van der Waals magnetic pinned layer, or the van der Waals pinning layer are respectively between a single atomic layer thickness and fifty nanometers.

[0014] According to the embodiments of the present disclosure, the resistance state of the tunnel junction composed of the room-temperature van der Waals magnetic free layer, the van der Waals spacer layer, and the room-temperature van der Waals magnetic pinned layer is determined by the relative magnetization states of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic pinned layer: when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic pinned layer are the same, the tunnel junction is in a low-resistance state; when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic pinned layer are opposite, the tunnel junction is in a high-resistance state.

[0015] On the other hand, the present disclosure provides a room-temperature all-electrically controlled magnetic memory based on all-two-dimensional materials, including: the room-temperature all-electrically controlled magnetic storage unit based on all-two-dimensional materials as described in any one of the above; and a metal top electrode disposed above the magnetic storage unit; wherein, the metal top electrode serves as the data reading end of the room-temperature all-electrically controlled magnetic memory; and the strong spin-orbit coupling van der Waals layer in the magnetic storage unit serves as the data writing end of the magnetic memory.

[0016] According to the embodiments of the present disclosure, the magnetic memory further includes: a metal bottom electrode disposed below the strong spin-orbit coupling van der Waals layer in the magnetic storage unit, and the metal bottom electrode serves as the data writing end of the magnetic memory.

[0017] (III) Beneficial effects

[0018] It can be seen from the above technical solutions that the room-temperature all-electrically controlled magnetic storage unit and memory based on all-two-dimensional materials of the present disclosure have at least one or a part of the following beneficial effects:

[0019] (1) Each layer in the room-temperature all-electrically controlled magnetic storage unit is made of two-dimensional materials. Different from bulk materials, the thinnest two-dimensional materials can be prepared to a single atomic layer thickness, so they have higher compactness than bulk materials;

[0020] (2) High-quality tunnel junction devices are prepared using two-dimensional material heterojunctions. Different from bulk materials, the two-dimensional layered van der Waals materials are tightly bonded by covalent bonds within the layer and only weakly bonded by van der Waals forces between layers. Therefore, there are no dangling bonds on the surface of the two-dimensional layered materials. We can arbitrarily stack different two-dimensional van der Waals materials to form heterojunctions without considering problems such as lattice matching, interdiffusion of atoms at the interface, poor perpendicular magnetic anisotropy of the magnetic electrode, or pinhole effects in the intermediate barrier layer, and it is easy to prepare tunnel junction devices with high interface quality;

[0021] (3) By taking advantage of the characteristic that the spin polarization direction remains unchanged when electron tunneling passes through the van der Waals spacer layer with the bandgap of a semiconductor or insulator, the magnetoresistance signal is enhanced, achieving a maximum TMR of ≥ 80% at room temperature, meeting the application requirements of magnetic memories. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] To more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0023] FIG. 1(a) is a schematic structural diagram of a room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials according to an embodiment of the present disclosure;

[0024] FIG. 1(b) is a schematic structural diagram of a room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials according to another embodiment of the present disclosure; among them, the magnetic storage unit shown in FIG. 1(b) is provided with a van der Waals pinning layer;

[0025] FIG. 2(a) is a schematic structural diagram of a room-temperature all-electrically controlled magnetic memory based on all two-dimensional materials according to an embodiment of the present disclosure; among them, the magnetic memory shown in FIG. 2(a) is only provided with a metal top electrode;

[0026] FIG. 2(b) is a schematic structural diagram of a room-temperature all-electrically controlled magnetic memory based on all two-dimensional materials according to another embodiment of the present disclosure; the magnetic memory shown in FIG. 2(b) is provided with both a metal top electrode and a metal bottom electrode;

[0027] Figure 3 FIG. is a schematic diagram of the test results of the TMR of the room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials according to the embodiment of the present disclosure at room temperature (300K).

[0028]

MAIN ELEMENT SYMBOL DESCRIPTIONS OF THE EMBODIMENTS OF THE PRESENT DISCLOSURE IN THE DRAWINGS

[0029] 100 - Room-temperature all-electrically controlled magnetic storage unit based on all two-dimensional materials; 101 - Strong spin-orbit coupling van der Waals layer; 102 - Room-temperature van der Waals magnetic free layer; 103 - Van der Waals spacer layer; 104 - Room-temperature van der Waals magnetic fixed layer; 105 - Van der Waals pinning layer; 201 - Metal top electrode; 202 - Metal bottom electrode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0030] The present disclosure provides a room-temperature all-electrically controlled magnetic storage unit and a memory based on all-two-dimensional materials, which can operate normally at room temperature. By utilizing the characteristic that the spin polarization direction remains unchanged when electrons tunnel through a van der Waals spacer layer with a semiconductor or insulator bandgap, the magnetoresistance signal can be enhanced, enabling a tunneling magnetoresistance of up to more than 80% at room temperature, and solving the problems that the magnetic tunnel junction based on two-dimensional materials does not have tunneling magnetoresistance at room temperature and has poor temperature stability.

[0031] To make the objectives, technical solutions, and advantages of the present disclosure clearer and more understandable, the following further elaborates on the present disclosure in detail with reference to specific embodiments and the accompanying drawings.

[0032] In an embodiment of the present disclosure, a room-temperature all-electrically controlled magnetic storage unit based on all-two-dimensional materials is provided. As shown in Fig. 1(a), the room-temperature all-electrically controlled magnetic storage unit 100 based on all-two-dimensional materials includes: a strong spin-orbit coupling van der Waals layer 101, a room-temperature van der Waals magnetic free layer 102, a van der Waals spacer layer 103, and a room-temperature van der Waals magnetic fixed layer 104, which are stacked from bottom to top.

[0033] Among them, the strong spin-orbit coupling van der Waals layer 101 is composed of a two-dimensional material with a strong spin-orbit coupling and a low-symmetry crystal structure. When a current is applied, the strong spin-orbit coupling van der Waals layer generates an out-of-plane polarized spin current to drive the room-temperature van der Waals magnetic free layer to achieve a directional pure electric control flip without an external magnetic field; the polarization direction of the out-of-plane polarized spin current corresponds to the polarity of the input electrical signal.

[0034] The room-temperature van der Waals magnetic free layer 102 is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is controlled by the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer.

[0035] The van der Waals spacer layer 103 is composed of a two-dimensional van der Waals material with a semiconductor bandgap and resistivity, or is composed of a two-dimensional van der Waals material with an insulator bandgap and resistivity; and

[0036] The room-temperature van der Waals magnetic fixed layer 104 is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is fixed and does not change with the change of the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer.

[0037] According to an embodiment of the present disclosure, the preparation material of the strong spin-orbit coupling van der Waals layer is selected from two-dimensional WTe 2 、two-dimensional MoS 2 、two-dimensional PtTe 2When a current is applied to the strong spin-orbit coupling van der Waals layer 101, the strong spin-orbit coupling van der Waals layer 101 can generate out-of-plane polarization due to the symmetry breaking of the crystal structure, that is, an upward or downward spin current. The polarization direction is related to the current polarity, driving the room-temperature van der Waals magnetic free layer 102 to achieve directional pure electric control flipping without an external magnetic field.

[0038] According to an embodiment of the present disclosure, the room-temperature van der Waals magnetic free layer 102 is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, which is composed of, for example, two-dimensional Fe 3 GaTe 2 and other materials. The direction of the magnetic moment is controlled by the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer 101; the room-temperature van der Waals magnetic free layer 102 provides perpendicular magnetism above room temperature, which can ensure that the tunnel junction device has TMR at room temperature.

[0039] According to an embodiment of the present disclosure, the van der Waals spacer layer 103 is composed of a two-dimensional van der Waals material with a semiconductor or insulator bandgap and resistivity; for example, two-dimensional hBN, two-dimensional GaSe, two-dimensional InSe, two-dimensional WSe 2 and two-dimensional WS 2 and two-dimensional MoTe 2 or two-dimensional MoSe 2 and so on; the electron passing through the van der Waals spacer layer 103 with a semiconductor or insulator bandgap keeps its own polarization direction unchanged to improve the magnetoresistance signal, so that the TMR can reach more than 80%.

[0040] According to an embodiment of the present disclosure, the room-temperature van der Waals magnetic pinned layer 104 is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, for example, composed of two-dimensional Fe 3 GaTe 2 and other materials. The direction of the magnetic moment is fixed and does not change with the change of the polarity of the electrical signal input to the strong spin-orbit coupling van der Waals layer 101; the room-temperature van der Waals magnetic pinned layer 104 provides perpendicular magnetism above room temperature, which can ensure that the tunnel junction device has TMR at room temperature.

[0041] According to another embodiment of the present disclosure, as shown in Fig. 1(b), the room-temperature all-electrically controlled magnetic storage unit 100 based on all two-dimensional materials further includes a van der Waals pinning layer 105. The van der Waals pinning layer 105 is disposed on the room-temperature van der Waals magnetic pinned layer, and the van der Waals pinning layer is composed of a room-temperature two-dimensional antiferromagnetic material. The van der Waals pinning layer 105 is composed of a room-temperature two-dimensional antiferromagnetic material, such as two-dimensional TaCoTe 2 and can further fix the direction of the magnetic moment of the room-temperature van der Waals magnetic pinned layer 104, improving the stability of the magnetic moment of the room-temperature van der Waals magnetic pinned layer 104 when the external magnetic field or thermal perturbation is strong.

[0042] According to an embodiment of the present disclosure, the thicknesses of the strong spin-orbit coupling van der Waals layer 101, the room-temperature van der Waals magnetic free layer 102, the van der Waals spacer layer 103, the room-temperature van der Waals magnetic fixed layer 104, or the van der Waals pinning layer 105 are respectively between a single atomic layer thickness and fifty nanometers.

[0043] According to an embodiment of the present disclosure, the resistance state of the tunnel junction composed of the room-temperature van der Waals magnetic free layer, the van der Waals spacer layer, and the room-temperature van der Waals magnetic fixed layer is determined by the relative magnetization states of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer: when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer are the same, the tunnel junction is in a low-resistance state; when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer are opposite, the tunnel junction is in a high-resistance state.

[0044] In an embodiment of the present disclosure, the all-two-dimensional-material-based room-temperature all-electrically-controlled magnetic storage unit 100 can be prepared by a bottom-up exfoliation and transfer method, such as mechanical exfoliation, wet and dry transfer, etc., or a bottom-up material growth method, such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), etc. Each layer can be prepared into a thin film with a minimum thickness of a single atomic layer of the preparation material of each layer. And the unit area can be controlled within 10nm 2 -100μm 2 。

[0045] The present disclosure also provides a room-temperature all-electrically-controlled magnetic memory based on all-two-dimensional materials. As shown in FIG. 2(a), the magnetic memory includes:

[0046] The all-two-dimensional-material-based room-temperature all-electrically-controlled magnetic storage unit 100 as described above; and

[0047] A metal top electrode 201, disposed above the magnetic storage unit 100;

[0048] wherein, the metal top electrode 201 serves as the data reading end of the room-temperature all-electrically-controlled magnetic memory; the strong spin-orbit coupling van der Waals layer in the magnetic storage unit serves as the data writing end of the magnetic memory.

[0049] According to an embodiment of the present disclosure, as shown in FIG. 2(a), a metal top electrode 201 is disposed above the room-temperature van der Waals magnetic fixed layer 104 or the van der Waals pinning layer 105, serving as the data reading end of the room-temperature all-electrically-controlled magnetic memory. The strong spin-orbit coupling van der Waals layer 101 of the all-two-dimensional-material-based room-temperature all-electrically-controlled magnetic storage unit 100 serves as the data writing end of the room-temperature all-electrically-controlled magnetic memory.

[0050] Further, as shown in Fig. 2(b), the magnetic memory may also be provided with a metal bottom electrode 202, which is disposed below the strong spin-orbit coupling van der Waals layer 101 in the magnetic memory cell 100. At this time, the metal bottom electrode 202 is used as the data writing end of the magnetic memory.

[0051] The working principle of the room-temperature all-electrically controlled magnetic memory cell and memory based on all-two-dimensional materials is as follows:

[0052] During the information writing operation, usually only a current is applied to the strong spin-orbit coupling van der Waals layer 101. The current is converted into a spin current with out-of-plane polarization (upward or downward) through the strong spin-orbit coupling van der Waals layer 101 and acts on the adjacent room-temperature van der Waals magnetic free layer 102. The directional flipping of the magnetization state of the room-temperature van der Waals magnetic free layer 102 is controlled according to the polarity of the current, that is, the magnetic moment direction is upward or downward. The junction resistance state is determined by the relative magnetization states of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104: when the magnetic moment directions of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104 are the same (i.e., parallel arrangement), the tunnel junction is in a low-resistance state; when the magnetic moment directions of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104 are opposite (i.e., antiparallel arrangement), the tunnel junction is in a high-resistance state. The high and low configurations of the tunnel junction resistance represent "0" and "1" in the information.

[0053] In the information reading operation, there are usually two methods: First, apply a voltage across the tunnel junction, that is, apply a voltage across the room-temperature van der Waals magnetic free layer 102, the van der Waals spacer layer 103, and the room-temperature van der Waals magnetic fixed layer 104, or from the metal bottom electrode 202 with the applied voltage through the metal top electrode 201; read the current. According to Ohm's law, the junction resistance is inversely proportional to the read current. Second, read the voltage by applying a current across the tunnel junction. According to Ohm's law, the junction resistance is proportional to the read voltage.

[0054] The junction resistance state of the tunnel junction composed of the room-temperature van der Waals magnetic free layer 102, the van der Waals spacer layer 103, and the room-temperature van der Waals magnetic fixed layer 104 is determined by the relative magnetization states of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104: when the magnetic moment directions of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104 are antiparallel, that is, one up and one down, the junction resistance is in a high-resistance state, denoted as R Ap ; when the magnetic moment directions of the room-temperature van der Waals magnetic free layer 102 and the room-temperature van der Waals magnetic fixed layer 104 are parallel, that is, both up or both down, the junction resistance is in a low-resistance state, denoted as RP. The tunneling magnetoresistance Generally speaking, the higher the TMR is, the better. And TMR≥80% is an important indicator for the application of tunneling junction devices. In the room-temperature all-electrically controlled magnetic storage unit 100 based on all two-dimensional materials used in the test, the room-temperature van der Waals magnetic free layer 102, the van der Waals spacer layer 103, and the room-temperature van der Waals magnetic pinned layer 104 are made of Fe 3 GaTe 2 , WSe 2 , and Fe 3 GaTe 2 respectively. As Figure 3 shown, the left vertical axis R represents the junction resistance, and the horizontal axis B represents the out-of-plane magnetic field. Under the condition of room temperature (300K), the room-temperature all-electrically controlled magnetic storage unit 100 based on all two-dimensional materials has a TMR of about 85%.

[0055] So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that in the accompanying drawings or the text of the specification, the implementation manners that are not depicted or described are all forms known to those of ordinary skill in the art and have not been described in detail. In addition, the above definitions of each element and method are not limited to the various specific structures, shapes, or manners mentioned in the embodiments, and those of ordinary skill in the art can make simple changes or replacements to them.

[0056] Based on the above description, those skilled in the art should have a clear understanding of the room-temperature all-electrically controlled magnetic storage unit and memory of the present disclosure based on all two-dimensional materials.

[0057] In summary, the present disclosure provides a room-temperature all-electrically controlled magnetic storage unit and memory based on all two-dimensional materials, which can achieve a tunneling magnetoresistance (TMR) of more than 80% at room temperature, and solve problems such as interface lattice mismatch, low interface flatness, or interdiffusion of atoms between interfaces in magnetic tunnel junction devices based on bulk materials, as well as the problems that magnetic tunnel junctions based on existing two-dimensional materials do not have tunneling magnetoresistance at room temperature and have poor temperature stability.

[0058] It should also be noted that the above are different embodiments provided by the present disclosure. These embodiments are used to illustrate the technical content of the present disclosure, rather than to limit the scope of the patent protection of the present disclosure. A feature of one embodiment can be applied to other embodiments through appropriate modification, replacement, combination, and separation.

[0059] It should be noted that in this article, unless otherwise specified, an element with "one" does not limit to having only one such element, but can have one or more such elements.

[0060] In addition, in this document, unless otherwise specified, ordinal numbers such as "first", "second", etc. are only used to distinguish multiple elements with the same name, and do not indicate a rank, hierarchy, execution order, or process order between them. A "first" element and a "second" element may appear together in the same component or in different components respectively. The presence of an element with a larger ordinal number does not necessarily imply the presence of another element with a smaller ordinal number.

[0061] In this document, unless otherwise specified, the so-called feature A "or" ( o r) or "and / or" feature B means that A exists alone, B exists alone, or A and B exist simultaneously; the so-called feature A "and" (and) or "and" (and) or "and" (and) feature B means that A and B exist simultaneously; the so-called "including", "comprising", "having", "containing" mean including but not limited to this.

[0062] In addition, in this document, terms such as "above", "below", "left", "right", "front", "rear", or "between" are only used to describe the relative positions between multiple elements and can be extended in interpretation to include cases of translation, rotation, or mirroring. In addition, in this document, unless otherwise specified, the statement "one element is on another element" or a similar statement does not necessarily mean that the element is in contact with the other element.

[0063] In addition, unless steps are specifically described or must occur in sequence, the order of the above steps is not limited to those listed above and can be changed or rearranged according to the required design. And based on considerations of design and reliability, the above embodiments can be used in combination with each other or in combination with other embodiments, that is, the technical features in different embodiments can be freely combined to form more embodiments.

[0064] The specific embodiments described above further elaborate on the purpose, technical solutions, and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not used to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A room-temperature all-electrically controlled magnetic storage unit based on all-two-dimensional materials, comprising: A strongly spin-orbit coupled van der Waals layer, a room-temperature van der Waals magnetic free layer, a van der Waals spacer layer, and a room-temperature van der Waals magnetic fixed layer stacked from bottom to top; Wherein, the strongly spin-orbit coupled van der Waals layer is composed of a two-dimensional material with a strongly spin-orbit coupling and a low-symmetry crystal structure. When an electrical signal is applied, the strongly spin-orbit coupled van der Waals layer generates an out-of-plane polarized spin current, and the polarization direction is related to the polarity of the input electrical signal. The out-of-plane polarized spin current is used to drive the room-temperature van der Waals magnetic free layer to achieve directional pure electrically controlled flipping without an external magnetic field; The room-temperature van der Waals magnetic free layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is controlled by the polarity of the electrical signal input to the strongly spin-orbit coupled van der Waals layer; The van der Waals spacer layer is composed of a two-dimensional van der Waals material with a semiconductor bandgap and resistivity, or composed of a two-dimensional van der Waals material with an insulator bandgap and resistivity; and The room-temperature van der Waals magnetic fixed layer is a two-dimensional magnetic layer with a super-room-temperature Curie temperature and perpendicular magnetic anisotropy, and the direction of the magnetic moment is fixed and does not change with the change of the polarity of the electrical signal input to the strongly spin-orbit coupled van der Waals layer.

2. The magnetic storage unit according to claim 1, further comprising a van der Waals pinning layer, wherein the van der Waals pinning layer is disposed on the room-temperature van der Waals magnetic fixed layer, and the van der Waals pinning layer is composed of a room-temperature two-dimensional antiferromagnetic material.

3. The magnetic storage unit according to claim 1, wherein the material for preparing the strong spin-orbit coupling van der Waals layer is selected from two-dimensional WTe 2 , two-dimensional MoS 2 , two-dimensional PtTe 2 .

4. The magnetic storage unit according to claim 1, wherein the materials for preparing the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer include two-dimensional Fe 3 GaTe 2 .

5. The magnetic storage unit according to claim 1, wherein the material for preparing the van der Waals space layer is selected from two-dimensional hBN, two-dimensional GaSe, two-dimensional InSe, two-dimensional WSe 2 , two-dimensional WS 2 , two-dimensional MoTe 2 , two-dimensional MoSe 2 .

6. The magnetic storage unit according to claim 2, wherein the material for preparing the van der Waals pinning layer comprises two-dimensional TaCoTe 2 .

7. According to the magnetic storage unit of claim 2, the thicknesses of the strongly spin-orbit coupled van der Waals layer, the room-temperature van der Waals magnetic free layer, the van der Waals spacer layer, the room-temperature van der Waals magnetic fixed layer, or the van der Waals pinning layer are respectively between a single atomic layer thickness and fifty nanometers.

8. According to the magnetic storage unit of claim 1, the resistance state of the tunnel junction composed of the room-temperature van der Waals magnetic free layer, the van der Waals spacer layer, and the room-temperature van der Waals magnetic fixed layer is determined by the relative magnetization states of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer: when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer are the same, the tunnel junction is in a low-resistance state; when the magnetic moment directions of the room-temperature van der Waals magnetic free layer and the room-temperature van der Waals magnetic fixed layer are opposite, the tunnel junction is in a high-resistance state.

9. A room-temperature all-electrically controlled magnetic memory based on all-two-dimensional materials, comprising: The room-temperature all-electrically controlled magnetic storage unit based on all-two-dimensional materials according to any one of claims 1 to 8; and A metal top electrode disposed above the magnetic storage unit; Wherein, the metal top electrode serves as the data reading end of the room-temperature all-electrically controlled magnetic memory; the strongly spin-orbit coupled van der Waals layer in the magnetic storage unit serves as the data writing end of the magnetic memory.

10. The magnetic memory according to claim 9, further comprising: A metal bottom electrode disposed below the strongly spin-orbit coupled van der Waals layer in the magnetic storage unit, and the metal bottom electrode serves as the data writing end of the magnetic memory.

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