A semiconductor light-emitting element with a voltage control layer and a method for preparing the same

Abstract

The present invention discloses a semiconductor light-emitting element with a voltage regulation layer and a preparation method thereof, and relates to semiconductor optoelectronic device technology; the element comprises: a substrate and a first semiconductor, a voltage regulation layer, an active region transition layer, a multi-quantum well, an electron blocking layer and a second semiconductor grown sequentially from bottom to top on the substrate; the voltage regulation layer comprises a first bandgap layer, a second bandgap layer and a third bandgap layer grown sequentially from bottom to top; the parameters of the third bandgap layer are greater than or equal to the parameters of the first bandgap layer; the parameters of the first bandgap layer are greater than or equal to the parameters of the second bandgap layer; the range of the silicon element doping concentration of the second bandgap layer is a second set range; the range of the silicon element doping concentration of the third bandgap layer is a third set range; the third set range is within the second set range; the silicon element doping concentration of the first bandgap layer is greater than or equal to the element doping concentration of the second bandgap layer; the present invention can controllably adjust the operating voltage without affecting the optoelectronic performance.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor light-emitting element with a voltage regulation layer and a preparation method thereof. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have the following advantages: a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long life of more than 100,000 hours, small size and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and become the light source for ordinary household lighting. They are also widely used in new scenarios, such as: indoor high-resolution display screens, outdoor display screens, mobile phone TV backlighting, street lights, car lights, flashlights, etc.

[0003] The coordinated display of chips with different wavelengths and colors in semiconductor light-emitting elements creates a vibrant and colorful lighting display. Due to differences in bandgap width, bulk resistance, and contact resistance between chips with different wavelengths, the green light voltage often appears low when blue and green light chips are used together, affecting optoelectronic performance. To address this low voltage and the resulting impact on optoelectronic performance, the current approach is to simply adjust the doping level to match the blue and green light voltages. However, this adjustment method introduces significant differences in voltage variation under different current density conditions, making the operating voltage of the color chips uncontrollable. Summary of the Invention

[0004] The object of the present invention is to provide a semiconductor light-emitting element with a voltage regulation layer and a preparation method thereof, which can controllably adjust the operating voltage without affecting the photoelectric performance.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] A semiconductor light-emitting element with a voltage control layer, the element comprising: a substrate and a first semiconductor, a voltage control layer, an active region transition layer, a multi-quantum well, an electron blocking layer, and a second semiconductor grown sequentially from bottom to top on the substrate;

[0007] The voltage control layer includes: a first bandgap layer, a second bandgap layer and a third bandgap layer grown sequentially from bottom to top;

[0008] The parameters of the third bandgap layer are greater than or equal to the parameters of the first bandgap layer; the parameters of the first bandgap layer are greater than or equal to the parameters of the second bandgap layer; the parameters include: width and aluminum element ratio;

[0009] The range of the silicon element doping concentration of the second band gap layer is the second set range; the range of the silicon element doping concentration of the third band gap layer is the third set range; the third set range is within the second set range; the silicon element doping concentration of the first band gap layer is greater than or equal to the element doping concentration of the second band gap layer.

[0010] Optionally, the width of the second bandgap layer is greater than or equal to the width of the well layer in the multi-quantum well; and the proportion of aluminum elements in the third bandgap layer is less than or equal to a set proportion.

[0011] Optionally, the range of the silicon element doping concentration of the first band gap layer is a first set range;

[0012] The first setting range is 5e 17 -5e 18 atoms / cm 3 ; The second setting range is 0-5e 17 atom / cm 3 ; The third setting range is 2e 17 -2e 18 atoms / cm 3 .

[0013] Optionally, the thickness of the first bandgap layer is 10 nm-50 nm; the thickness of the second bandgap layer is 1 nm-10 nm; and the thickness of the third bandgap layer is 10 nm-50 nm.

[0014] Optionally, a material of the voltage control layer is at least one of AlInGaN, AlGaN, InGaN, GaN, AlInN and AlN.

[0015] Optionally, the substrate is made of sapphire, silicon, SiC, AlN, GaN, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate or sapphire / SiN x Composite substrate.

[0016] Optionally, the second bandgap layer contains indium elements within a set composition range.

[0017] Optionally, the set component range is 3% to 30%.

[0018] Optionally, the set proportion is 20%.

[0019] An embodiment of the present invention further provides a method for preparing a semiconductor light-emitting element having a voltage control layer, the method being used to prepare the above-mentioned semiconductor light-emitting element, and comprising:

[0020] Determine the width, aluminum content, and silicon doping concentration of the first, second, and third bandgap layers;

[0021] The parameters of the third bandgap layer are greater than or equal to the parameters of the first bandgap layer; the parameters of the first bandgap layer are greater than or equal to the parameters of the second bandgap layer; the parameters include: width and aluminum element ratio;

[0022] The silicon doping concentration of the second bandgap layer is within a second set range; the silicon doping concentration of the third bandgap layer is within a third set range; the third set range is within the second set range; the silicon doping concentration of the first bandgap layer is greater than or equal to the element doping concentration of the second bandgap layer;

[0023] A first semiconductor, the first bandgap layer, the second bandgap layer, the third bandgap layer, an active region transition layer, a multi-quantum well, an electron blocking layer and a second semiconductor are grown on the substrate from bottom to top in sequence; the first bandgap layer, the second bandgap layer and the third bandgap layer constitute a voltage control layer.

[0024] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

[0025] The present invention provides a semiconductor light-emitting element with a voltage regulation layer and a preparation method thereof. The voltage regulation layer in the element includes a first bandgap layer, a second bandgap layer and a third bandgap layer. By adjusting and selecting the first bandgap layer, the second bandgap layer and the third bandgap layer with different widths, aluminum element proportions and silicon element doping concentration ranges, the voltage regulation layer changes, forming a quantum confinement effect, deepening the confined energy level, forming a high resistance state and slowing down the electron migration rate, so that the operating voltage of the semiconductor light-emitting element can be increased, and the photoelectric performance of the element is not affected. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 A schematic structural diagram of a semiconductor light-emitting element with a voltage control layer provided in an embodiment of the present invention;

[0028] Figure 2 A flow chart of a method for preparing a semiconductor light-emitting element with a voltage control layer provided in an embodiment of the present invention;

[0029] Figure 3 A schematic diagram of the structure of the voltage control layer provided in an embodiment of the present invention;

[0030] Figure 4 This is a comparison diagram of IV curves of Cases 1 to 5 provided in the embodiment of the present invention and the reference example.

[0031] Explanation of symbols:

[0032] Substrate-1, first semiconductor-2, voltage control layer-3, active region transition layer-4, multi-quantum well-5, electron blocking layer-6, second semiconductor-7, first bandgap layer-8, second bandgap layer-9, third bandgap layer-10. DETAILED DESCRIPTION

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0034] The object of the present invention is to provide a semiconductor light-emitting element with a voltage regulation layer and a preparation method thereof, which can controllably adjust the operating voltage without affecting the photoelectric performance.

[0035] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0036] Example 1

[0037] like Figure 1 As shown, an embodiment of the present invention provides a semiconductor light-emitting element with a voltage control layer, the element comprising: a substrate 1 and a first semiconductor 2, a voltage control layer 3, an active region transition layer 4, a multi-quantum well 5, an electron blocking layer 6, and a second semiconductor 7 grown sequentially from bottom to top on the substrate 1. The multi-quantum well 5 comprises: a well layer. The semiconductor light-emitting element is stacked using methods such as metal organic chemical vapor deposition (MOCVD), metal organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE), preferably using MOCVD.

[0038] The material of substrate 1 is sapphire, silicon, SiC, AlN, GaN, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate or sapphire / SiN x Any type of composite substrate.

[0039] The material of the voltage control layer 3 is at least one of AlInGaN, AlGaN, InGaN, GaN, AlInN and AlN.

[0040] In short, the voltage control layer 3 is made of any one or any combination of AlInGaN, AlGaN, InGaN, GaN, AlInN, and AlN to form superlattices, quantum dots, core-shell quantum dots, and core-shell nanostructures.

[0041] The first semiconductor 2, active region transition layer 4, multi-quantum well 5, electron blocking layer 6 and second semiconductor 7 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN. Both the first semiconductor 2 and the second semiconductor 7 are conductive semiconductors.

[0042] like Figure 3 As shown, the voltage control layer 3 includes: a first bandgap layer 8, a second bandgap layer 9 and a third bandgap layer 10 grown sequentially from bottom to top.

[0043] Specifically, the thickness of the first bandgap layer 8 is 10nm-50nm, the thickness of the second bandgap layer 9 is 1nm-10nm, and the thickness of the third bandgap layer 10 is 10nm-50nm, which can ultimately make the total thickness of the voltage control layer 3 range from 10nm to 100nm;.

[0044] The second band gap layer 9 contains indium element with a set composition range, wherein the set composition range is 3% to 30%.

[0045] The parameters of the third bandgap layer 10 are greater than or equal to the parameters of the first bandgap layer 8; the parameters of the first bandgap layer 8 are greater than or equal to the parameters of the second bandgap layer 9; wherein the parameters include: width and aluminum element ratio.

[0046] The range of the silicon element doping concentration of the second band gap layer 9 is the second set range; the range of the silicon element doping concentration of the third band gap layer 10 is the third set range; the third set range is within the second set range; the silicon element doping concentration of the first band gap layer 8 is greater than or equal to the element doping concentration of the second band gap layer 9.

[0047] Specifically, the width of the third bandgap layer 10 is greater than or equal to the width of the first bandgap layer 8; the width of the first bandgap layer 8 is greater than or equal to the width of the second bandgap layer 9; and the width of the second bandgap layer 9 is greater than or equal to the width of the well layer.

[0048] The aluminum content of the third bandgap layer 10 is greater than or equal to that of the first bandgap layer 8; the aluminum content of the first bandgap layer 8 is greater than or equal to that of the second bandgap layer 9; and the aluminum content of the third bandgap layer 10 is less than or equal to a set content. Specifically, the set content is 20%.

[0049] The range of the silicon element doping concentration of the first band gap layer 8 is the first setting range; the range of the silicon element doping concentration of the second band gap layer 9 is the second setting range, and the range of the silicon element doping concentration of the third band gap layer 10 is the third setting range; the starting end of the first setting range is the ending end of the second setting range; the third setting range is within the second setting range.

[0050] Specifically, the first setting range is 5e 17 -5e 18 atoms / cm 3 , the second setting range is 0-5e 17 atom / cm 3 , the third setting range is 2e 17 -2e 18 atoms / cm 3 .

[0051] Except for the voltage control layer 3 , the present invention has no special limitation on the thickness and composition of the other layers, and they can be formed using conditions well known to those skilled in the art.

[0052] The Al doping in the voltage control layer 3, i.e., the proportion of aluminum, varies in a gradient; the Si doping in the voltage control layer 3, i.e., the doping concentration of silicon, varies in a gradient. By varying the band gap and the Si doping concentration, and their combined effects, a quantum confinement effect is created, while a high resistance state is formed at the interface and the electron migration rate is slowed. Without affecting other optoelectronic properties, the operating voltage of the semiconductor light-emitting element can be controllably increased, by 1 to 100 A / cm 2 The voltage regulation range under current injection exceeds 0.4V.

[0053] Taking the green light emitting semiconductor element as an example, the voltage control layer 3 is composed of a first bandgap layer 8, a second bandgap layer 9, and a third bandgap layer 10 stacked in sequence, and the growth materials of the three layers are AlGaN, InGaN, and AlGaN respectively.

[0054] Case 1: The design values of the bandgap width are: 3.48ev, 2.95ev, and 3.55ev; the corresponding three-layer aluminum element composition is: 3%, 0%, and 6%; the corresponding three-layer indium element composition is: 0%, 10%, and 0%; the corresponding three-layer Si doping concentration is: 8e 17 atoms / cm 3 , 2e 17 atoms / cm 3 , 5e 17 atoms / cm 3The corresponding three-layer thicknesses are 20nm, 2.5nm, and 20nm, respectively. The first, second, and third bandgap layers 8, 9, and 10 in the voltage-regulating layer 3 create a quantum confinement effect through variations in bandgap width and Si doping concentration, as well as their combined effects. This simultaneously creates a high-resistance state at the interface and slows down electron migration, allowing the operating voltage of the semiconductor light-emitting element to be controllably increased without affecting other optoelectronic properties.

[0055] Case 2: The green light-emitting semiconductor element in Case 1 is improved, that is, on its basis, the indium element composition of the second bandgap layer 9 is increased from 10% to 16%; the bandgap width of the second bandgap layer 9 is lowered from 2.95ev to 2.70ev; by increasing the indium element composition, the bandgap width of the second bandgap layer 9 is lowered, so that the voltage control layer 3 has a deeper confinement energy level, which has a more obvious lifting effect on the electron Fermi level, and thus the operating voltage of the light-emitting semiconductor element is more significantly improved.

[0056] Case 3: Another improvement can be made to the green light emitting semiconductor element, that is, to increase the aluminum content of the first band gap layer 8 and the third band gap layer 10 from 3% and 6% to 5% and 10%, and at the same time reduce the silicon doping concentration of the three layers to 6e 17 atoms / cm 3 , 1e 17 atoms / cm 3 , 2e 17 atoms / cm 3 ; By increasing the proportion of aluminum elements, the width of the first band gap layer 8 and the width of the third band gap layer 10 are widened. When the width of the second band gap layer 9 remains unchanged, the limiting energy level of the voltage control layer 3 is also deepened. At the same time, by reducing the doping concentration of silicon elements, the contact resistance between the interfaces is increased, thereby achieving a more significant increase in the operating voltage of the semiconductor light-emitting element.

[0057] Case 4: This improves on Case 1. Based on Case 1, the voltage control layer 3 is grown in two layers, instead of one, sequentially stacked, first wide bandgap layer, second narrow bandgap layer, and third wide bandgap layer. Other conditions remain unchanged. In this case, the increased period of voltage control layer 3 increases the number of confined energy levels and the number of high-resistance interfaces. However, because the depth of the confined energy levels and the interface resistance remain unchanged, the overall voltage increase is comparable to that in Case 1.

[0058] Case 5: As another improvement of Case 1, based on Case 1, the thickness of the second band gap layer 9 is increased from 2.5nm to 4nm, and the Si doping concentration of the second band gap layer 9 is increased from 2e 17 atoms / cm3 By increasing the width of the second bandgap layer 9 and reducing the Si doping amount, the voltage control layer 3 can achieve a deeper confinement level and a higher resistance contact interface, which is more conducive to raising the electron Fermi level and increasing the operating voltage of the semiconductor device.

[0059] In one embodiment, as a comparative reference example of Cases 1 to 5, compared with Cases 1 to 5, only the voltage regulation layer 3 is removed, and the other functional layers are the same as Cases 1 to 5.

[0060] Cases 1 to 5 and the reference example were made into 10mil*20mil upright structure chips, and the 2 The voltage change is tested under the driving current of the current density.

[0061] Figure 4 The IV curves of Cases 1 to 5 are compared with the reference example, that is, the voltage value V and current density curves in the mode (VF) where the output voltage is proportional to the frequency. As can be seen from the data in the figure, in Case 1, the voltage control layer 3 is introduced to increase the current density in the range of 1 to 100 A / cm 2 Driven by the current, the voltage slope does not change significantly, and the voltage increases steadily by about 0.15V. Case 2, based on Case 1, increases the In composition of the second bandgap layer 9 from 10% to 16%; lowers the bandgap width of the second bandgap layer 9 from 2.95ev to 2.70ev; by increasing the In composition, the bandgap width of the second bandgap layer 9 is lowered, so that the voltage control layer 3 has a deeper confinement energy level, which has a more obvious lifting effect on the electron Fermi level, thereby significantly improving the operating voltage of the light-emitting semiconductor element. Compared with the reference example, the voltage is increased by about 0.39V. Case 3, based on Case 1, increases the Al composition of the first bandgap layer 8 and the third bandgap layer 10 from 3% and 6% to 5% and 10%, and at the same time lowers the Si doping of the three layers to 6e 17 atoms / cm 3 , 1e 17 atoms / cm 3 , 2e 17 atoms / cm 3By increasing the Al content, the widths of the first and third bandgap layers 8 and 10 are widened. While the width of the second bandgap layer 9 remains unchanged, the confinement level of the voltage-regulating layer 3 is deepened. Simultaneously, by decreasing the Si doping concentration, the contact resistance between interfaces is increased, thereby significantly increasing the operating voltage of the semiconductor light-emitting device. Compared with the reference example, the voltage is increased by approximately 0.36V. Case 4 increases the period of the voltage-regulating layer 3, increasing the number of confinement levels and the number of high-resistance interfaces. However, because the depth of the confinement levels and the interface resistance remain unchanged, the overall voltage increase is approximately 0.18V, only slightly higher than the increase in Case 1 by 0.03V. Case 5 increases the width of the second bandgap layer 9 while reducing the Si doping level, achieving a deeper confinement level and a higher-resistance contact interface in the voltage-regulating layer 3. This further increases the electron Fermi level and improves the operating voltage of the semiconductor device. Compared with the reference example, the operating voltage is increased by approximately 0.29V.

[0062] In summary, the present invention provides a semiconductor light-emitting element with a voltage control layer 3. Through the introduction of the voltage control layer 3, the quantum confinement effect is formed by the change of the band gap width of the first band gap layer 8, the second band gap layer 9 and the third band gap layer 10 and the change of the Si element doping concentration and their combined change effect. At the same time, a high resistance state is formed at the interface and the electron migration rate is slowed down. Without affecting other photoelectric properties, the operating voltage of the semiconductor light-emitting element can be controllably increased by 1 to 100 A / cm 2 The voltage regulation range under current injection exceeds 0.4V.

[0063] Example 2

[0064] like Figure 2 As shown, an embodiment of the present invention provides a method for preparing a semiconductor light-emitting element having a voltage control layer, the method comprising:

[0065] Step 100: Determine the width, aluminum content, and silicon doping concentration of the first bandgap layer, the second bandgap layer, and the third bandgap layer.

[0066] Among them, the parameters of the third band gap layer are greater than or equal to the parameters of the first band gap layer; the parameters of the first band gap layer are greater than or equal to the parameters of the second band gap layer; the parameters include: width and aluminum element ratio.

[0067] The range of the silicon element doping concentration of the second band gap layer is the second set range; the range of the silicon element doping concentration of the third band gap layer is the third set range; the third set range is within the second set range; the silicon element doping concentration of the first band gap layer is greater than or equal to the element doping concentration of the second band gap layer.

[0068] Step 200: Growing a first semiconductor, a first bandgap layer, a second bandgap layer, a third bandgap layer, an active region transition layer, a multi-quantum well, an electron blocking layer and a second semiconductor on a substrate from bottom to top; the first bandgap layer, the second bandgap layer and the third bandgap layer constitute a voltage control layer.

[0069] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0070] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A semiconductor light emitting element having a voltage control layer, characterized in that: The element comprises: a substrate and a first semiconductor, a voltage control layer, an active region transition layer, a multi-quantum well, an electron blocking layer and a second semiconductor grown sequentially from bottom to top on the substrate; The voltage control layer includes: a first bandgap layer, a second bandgap layer and a third bandgap layer grown sequentially from bottom to top; The parameters of the third bandgap layer are greater than or equal to the parameters of the first bandgap layer; the parameters of the first bandgap layer are greater than or equal to the parameters of the second bandgap layer; the parameters include: bandgap width and aluminum element ratio; The silicon doping concentration of the second bandgap layer is within a second set range; the silicon doping concentration of the third bandgap layer is within a third set range; the third set range is within the second set range; the silicon doping concentration of the first bandgap layer is greater than or equal to the silicon doping concentration of the second bandgap layer; The range of the silicon element doping concentration of the first band gap layer is a first set range; The first setting range is 5e 17 -5e 18 atoms / cm 3 ; The second setting range is 0-5e 17 atom / cm 3 ; The third setting range is 2e 17 -2e 18 atoms / cm 3 .

2. The semiconductor light emitting element having a voltage control layer according to claim 1, wherein: The bandgap width of the second bandgap layer is greater than or equal to the bandgap width of the well layer in the multi-quantum well; the proportion of aluminum elements in the third bandgap layer is less than or equal to a set proportion.

3. The semiconductor light emitting element having a voltage control layer according to claim 1, wherein: The thickness of the first bandgap layer is 10nm-50nm; the thickness of the second bandgap layer is 1nm-10nm; and the thickness of the third bandgap layer is 10nm-50nm.

4. The semiconductor light emitting element having a voltage control layer according to claim 1, wherein: The material of the voltage control layer is at least one of AlInGaN, AlGaN, InGaN, GaN, AlInN and AlN.

5. The semiconductor light emitting element having a voltage control layer according to claim 1, wherein: The substrate material is sapphire, silicon, SiC, AlN, GaN, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate or sapphire / SiN x Composite substrate.

6. The semiconductor light emitting element having a voltage control layer according to claim 1, wherein: The second band gap layer contains indium elements within a set composition range.

7. The semiconductor light emitting element having a voltage control layer according to claim 6, characterized in that: The set component range is 3% to 30%.

8. The semiconductor light emitting element having a voltage control layer according to claim 2, wherein: The setting accounts for 20%.

9. A method for preparing a semiconductor light-emitting element having a voltage control layer, characterized in that: The preparation method is used to prepare the semiconductor light-emitting element according to any one of claims 1 to 8, and the preparation method comprises: Determine the bandgap width, aluminum content, and silicon doping concentration of the first, second, and third bandgap layers; The parameters of the third bandgap layer are greater than or equal to the parameters of the first bandgap layer; the parameters of the first bandgap layer are greater than or equal to the parameters of the second bandgap layer; the parameters include: bandgap width and aluminum element ratio; The silicon doping concentration of the second bandgap layer is within a second set range; the silicon doping concentration of the third bandgap layer is within a third set range; the third set range is within the second set range; the silicon doping concentration of the first bandgap layer is greater than or equal to the silicon doping concentration of the second bandgap layer; A first semiconductor, a first bandgap layer, a second bandgap layer, a third bandgap layer, an active region transition layer, a multi-quantum well, an electron blocking layer, and a second semiconductor are sequentially grown on the substrate from bottom to top; the first bandgap layer, the second bandgap layer, and the third bandgap layer constitute a voltage control layer; The range of the silicon element doping concentration of the first band gap layer is a first set range; The first setting range is 5e 17 -5e 18 atoms / cm 3 ; The second setting range is 0-5e 17 atom / cm 3 ; The third setting range is 2e 17 -2e 18 atoms / cm 3 .

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