High frequency module and communication device

Abstract

The high-frequency module (1A) is provided with: a power amplifier (11, 12, and 13) disposed on a main surface (91a) of a module substrate (91); a transmission filter (61T) connected to an output terminal of the power amplifier (11) and allowing a transmission signal of a communication band A to pass therethrough; a transmission filter (63T) connected to an output terminal of the power amplifier (12) and allowing a transmission signal of a communication band C to pass therethrough; a transmission filter (65T) connected to an output terminal of the power amplifier (13) and allowing a transmission signal of a communication band E to pass therethrough; a resin member (92) covering the main surface (91a); a metal shielding layer (95) covering a surface of the resin member (92); and a metal shielding plate (80) disposed on the main surface (91a) and disposed between the power amplifier (11) and the power amplifier (12) and between the power amplifier (11) and the power amplifier (13), the metal shielding plate (80) being in contact with a first ground electrode of the main surface (91a) and the metal shielding layer (95).

Description

Technical Field

[0001] This invention relates to high-frequency modules and communication devices. Background Technology

[0002] In mobile communication devices such as portable phones, especially with the advancement of multi-band technology, the configuration structure of circuit elements constituting the high-frequency front-end circuit has become more complex.

[0003] Patent Document 1 discloses a circuit structure for a transceiver (transceiver circuit), which includes multiple transmitters (transmit paths), multiple receivers (receive paths), and a switchplexer (antenna switch) configured between the multiple transmitters, multiple receivers, and an antenna. Each of the multiple transmitters has a transmit circuit, a power amplifier (PA), and an output circuit; each of the multiple receivers has a receive circuit, a low-noise amplifier (LNA), and an input circuit. The output circuit includes a transmit filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receive filter, an impedance matching circuit, and a duplexer. Based on this structure, simultaneous transmission, simultaneous reception, or simultaneous transmit and receive can be performed through the switching action of the switchplexer.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: JP Patent No. 2014-522216 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] However, in the case where the transceiver (transceiver circuit) disclosed in Patent Document 1 is composed of a high-frequency module mounted on a mobile communication device, harmonics of the high-output transmit signal amplified by the PA (transmit power amplifier) ​​sometimes overlap with the transmit signal, resulting in a deterioration in the quality of the transmit signal. Furthermore, sometimes the inductors respectively configured in the transmit and receive paths are electromagnetically coupled to each other, reducing the isolation between the transmit and receive signals. Unwanted waves such as harmonics of the transmit signal or intermodulation distortion between the transmit signal and other high-frequency signals flow into the receive path, thus degrading the receive sensitivity.

[0009] The present invention was made to solve the above-mentioned problems, and its purpose is to provide a high-frequency module and a communication device in which the degradation of the quality of the transmitted or received signal is suppressed.

[0010] Technical solutions for solving the problem

[0011] To achieve the above objectives, one aspect of the present invention relates to a high-frequency module comprising: a module substrate having a first main surface; a first power amplifier disposed on the first main surface; a second power amplifier disposed on the first main surface; a third power amplifier disposed on the first main surface; a first filter connected to the output terminal of the first power amplifier to allow transmission signals of a first communication frequency band to pass through; a second filter connected to the output terminal of the second power amplifier to allow transmission signals of a second communication frequency band different from the first communication frequency band to pass through; and a third filter connected to the output terminal of the third power amplifier to allow transmission signals of a third communication frequency band different from both the first and second communication frequency bands to pass through. The communication band transmission signal passes through; a resin component covering at least a portion of the first main surface; a metal shielding layer covering the surface of the resin component and set to ground potential; a first metal shielding plate disposed on the first main surface and disposed between the first power amplifier and the second power amplifier when viewed from above the module substrate; and a second metal shielding plate disposed on the first main surface and disposed between the first power amplifier and the third power amplifier when viewed from above the module substrate, the first metal shielding plate being connected to the first ground electrode and the metal shielding layer of the first main surface, and the second metal shielding plate being connected to the second ground electrode and the metal shielding layer of the first main surface.

[0012] Invention Effects

[0013] According to the present invention, a high-frequency module and a communication device are provided in which the degradation of the quality of the transmitted or received signal is suppressed. Attached Figure Description

[0014] Figure 1 This is a circuit structure diagram of the high-frequency module and communication device involved in the implementation method.

[0015] Figure 2 These are top views and cross-sectional views of the high-frequency module involved in Embodiment 1.

[0016] Figure 3 These are top views and cross-sectional views of the high-frequency module involved in Embodiment 2.

[0017] Figure 4A This is a top view of the high-frequency module involved in Embodiment 3.

[0018] Figure 4B This is a cross-sectional view of the high-frequency module involved in Embodiment 3. Detailed Implementation

[0019] The embodiments of the present invention will now be described in detail. Furthermore, the embodiments described below are either general or specific examples. Additionally, the values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments and examples are merely examples and are not intended to limit the present invention. Furthermore, constituent elements not described in the independent claims in the following embodiments are described as arbitrary constituent elements. Moreover, the sizes or size ratios of the constituent elements shown in the drawings are not necessarily precise. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0020] Furthermore, the following terms, such as parallel and perpendicular, which indicate the relationship between elements, and rectangular shape, which indicates the shape of elements, and numerical range, do not simply mean strict, but imply substantially equivalent ranges, for example, including differences of a few percent.

[0021] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is perpendicular to the main surface of the module substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0022] Furthermore, in the circuit structure disclosed herein, the term "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also electrical connections via other circuit components. Additionally, the term "connection between A and B" means a connection between A and B, and between both A and B.

[0023] Furthermore, in the modular structure disclosed herein, "top view" means viewing an object by projecting it laterally onto the xy plane from the positive z-axis direction. "Component disposed on the main surface of the substrate" includes not only components disposed on the main surface in contact with it, but also components disposed above the main surface without contact, and components partially embedded into the substrate from the main surface side. "A disposed between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. Furthermore, terms indicating relationships between elements, such as "parallel" and "perpendicular," and terms indicating the shape of elements, such as "rectangular," do not merely have a strict meaning, but rather imply a substantially equivalent range, including, for example, a percentage degree of error.

[0024] Furthermore, the term "transmit path" hereafter refers to a transmission line consisting of wiring for transmitting high-frequency transmitted signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Similarly, the term "receive path" refers to a transmission line consisting of wiring for transmitting high-frequency received signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Finally, the term "transmit-receive path" refers to a transmission line consisting of wiring for both transmitting and receiving high-frequency transmitted and received signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0025] (Implementation Method)

[0026] [1 Circuit structure of high-frequency module 1 and communication device 5]

[0027] Figure 1 This is a circuit diagram of the high-frequency module 1 and the communication device 5 according to the embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, antennas 2a, 2b and 2c, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0028] RFIC3 is an RF signal processing circuit that processes the high-frequency signals transmitted and received by antennas 2a to 2c. Specifically, RFIC3 processes the received signal input through the receiving path of high-frequency module 1 by down-conversion or the like, and outputs the received signal generated by the signal processing to BBIC4. In addition, RFIC3 processes the transmitted signal input from BBIC4 by up-conversion or the like, and outputs the transmitted signal generated by the signal processing to the transmitting path of high-frequency module 1.

[0029] BBIC4 is a circuit that performs signal processing using an intermediate frequency band that is lower than the high-frequency signal propagating in high-frequency module 1. The signal processed by BBIC4 is used, for example, as an image signal for image display, or as an audio signal for communication via a speaker.

[0030] Furthermore, RFIC3 also functions as a control unit to control the connections of switches 51, 52, 53, 54, 55, 56, 57, and 58 of the high-frequency module 1 based on the communication frequency band (band) being used. Specifically, RFIC3 switches the connections of switches 51 to 58 of the high-frequency module 1 according to control signals (not shown). Alternatively, the control unit can be located externally to RFIC3, for example, it can be located within the high-frequency module 1 or BBIC4.

[0031] Antenna 2a is connected to antenna connection terminal 101 of high-frequency module 1, antenna 2b is connected to antenna connection terminal 102 of high-frequency module 1, and antenna 2c is connected to antenna connection terminal 103 of high-frequency module 1. Antennas 2a to 2c radiate high-frequency signals output from high-frequency module 1, and also receive high-frequency signals from the outside and output them to high-frequency module 1.

[0032] Furthermore, in the communication device 5 according to this embodiment, antennas 2a to 2c and BBIC4 are not essential components.

[0033] Next, the detailed structure of high-frequency module 1 will be explained.

[0034] like Figure 1 As shown, the high-frequency module 1 includes power amplifiers 11, 12 and 13, low-noise amplifiers 21, 22 and 23, transmit filters 61T, 62T, 63T, 64T, 65T and 66T, receive filters 61R, 62R, 63R, 64R, 65R and 66R, matching circuits 31, 32, 33, 41, 42 and 43, switches 51, 52, 53, 54, 55, 56, 57 and 58, antenna connection terminals 101, 102 and 103, transmit input terminals 111, 112 and 113, and receive output terminals 121, 122 and 123.

[0035] Power amplifier 11 is an example of a first power amplifier that amplifies the transmitted signals of communication bands A and B. The input terminals of power amplifier 11 are connected to the transmit input terminal 111, and the output terminals of power amplifier 11 are connected to transmit filters 61T and 62T via matching circuit 31 and switch 51.

[0036] Power amplifier 12 is an example of a second power amplifier, which amplifies the transmitted signals of communication bands C and D, which are on the higher side of communication bands A and B. The input terminals of power amplifier 12 are connected to the transmit input terminal 112, and the output terminals of power amplifier 12 are connected to the transmit filters 63T and 64T via matching circuit 32 and switch 52.

[0037] Power amplifier 13 is an example of a third power amplifier, which amplifies the transmitted signals of communication bands E and F, which are on the higher side of communication bands A and B. The input terminals of power amplifier 13 are connected to the transmit input terminal 113, and the output terminals of power amplifier 13 are connected to the transmit filters 65T and 66T via matching circuit 33 and switch 53.

[0038] Furthermore, communication bands A and B are examples of the first communication band, for example, communication bands belonging to the low-frequency band group. Communication bands C and D are examples of the second communication band, for example, communication bands belonging to the mid-frequency band group. Communication bands E and F are examples of the third communication band, for example, communication bands belonging to the high-frequency band group.

[0039] A low-frequency band group is a group of frequency bands consisting of multiple communication frequency bands corresponding to 4G and 5G, for example, having a frequency range below 1 GHz. Communication frequency bands A and B of the low-frequency band group include, for example, the communication frequency bands that can be used for LTE (Long Term Evolution), such as Band 5 (transmit band: 824–849 MHz, receive band: 869–894 MHz), Band 8 (transmit band: 880–915 MHz, receive band: 925–960 MHz), and Band 28 (transmit band: 703–748 MHz, receive band: 753–803 MHz).

[0040] The mid-band group is a frequency band group consisting of multiple communication frequency bands corresponding to 4G and 5G, for example, having a frequency range of 1.5 to 2.2 GHz. Communication frequency bands C and D of the mid-band group can be, for example, LTE's Band 1 (transmit band: 1920–1980 MHz, receive band: 2110–2170 MHz), Band 39 (transmit and receive bands: 1880–1920 MHz), and Band 66 (transmit band: 1710–1780 MHz, receive band: 2110–2200 MHz).

[0041] A high-frequency band group is a group of frequency bands consisting of multiple communication frequency bands corresponding to 4G and 5G, for example, having a frequency range of 2.4 to 2.8 GHz. Communication frequency bands E and F of the high-frequency band group can, for example, include LTE's Band 7 (transmit band: 2500–2570 MHz, receive band: 2620–2690 MHz) and Band 41 (transmit and receive band: 2496–2690 MHz).

[0042] Furthermore, communication frequency bands A through F respectively refer to frequency bands predefined by standardization organizations (e.g., 3GPP, IEEE (Institute of Electrical and Electronics Engineers)) for communication systems built using Radio Access Technology (RAT). In this embodiment, the communication system can be, for example, an LTE system, a 5G NR system, or a WLAN (Wireless Local Area Network) system, but is not limited to these.

[0043] Furthermore, communication frequency bands A through F consist of a transmit band and a receive band, respectively. Here, the transmit band refers to the frequency range within the communication band designated for uplink use. Similarly, the receive band refers to the frequency range within the communication band designated for downlink use.

[0044] Low-noise amplifier 21 is an example of a first low-noise amplifier that amplifies the received signals of communication bands A and B with low noise. The input terminals of low-noise amplifier 21 are connected to receiving filters 61R and 62R via matching circuit 41 and switch 54, and the output terminals of low-noise amplifier 21 are connected to receiving output terminal 121.

[0045] Low-noise amplifier 22 is an example of a second low-noise amplifier, which amplifies the received signals in communication bands C and D with low noise. The input terminals of low-noise amplifier 22 are connected to receiver filters 63R and 64R via matching circuit 42 and switch 55, and the output terminals of low-noise amplifier 22 are connected to receiver output terminal 122.

[0046] Low-noise amplifier 23 is an example of a third low-noise amplifier, which amplifies the received signals in communication bands E and F with low noise. The input terminals of low-noise amplifier 23 are connected to the receiving filters 65R and 66R via matching circuit 43 and switch 56, and the output terminals of low-noise amplifier 23 are connected to the receiving output terminal 123.

[0047] Transmit filter 61T is an example of the first filter, configured in the transmit path AT that connects transmit input terminal 111 and switch 57, and connected to power amplifier 11 via switch 51 and matching circuit 31. Transmit filter 61T allows the transmit signal of the transmission band of communication frequency band A in the transmit signal amplified by power amplifier 11 to pass through.

[0048] Transmit filter 62T is an example of a first filter, configured in transmit path BT that connects transmit input terminal 111 and switch 57, and connected to power amplifier 11 via switch 51 and matching circuit 31. Transmit filter 62T allows the transmit signal of the communication frequency band B in the transmit signal amplified by power amplifier 11 to pass through. Furthermore, transmit paths AT and BT are an example of a first transmit path for transmitting transmit signals of the low-frequency band group.

[0049] Transmit filter 63T is an example of the second filter, configured in the transmit path CT that connects transmit input terminal 112 and switch 58, and connected to power amplifier 12 via switch 52 and matching circuit 32. Transmit filter 63T allows the transmit signal of the communication frequency band C in the transmit signal amplified by power amplifier 12 to pass through.

[0050] Transmit filter 64T is an example of a second filter, configured in transmit path DT that connects transmit input terminal 112 and switch 58, and connected to power amplifier 12 via switch 52 and matching circuit 32. Transmit filter 64T allows the transmit signal of the communication frequency band D in the transmit signal amplified by power amplifier 12 to pass through. Furthermore, transmit paths CT and DT are an example of a second transmit path for transmitting transmit signals of the intermediate frequency band group.

[0051] Transmit filter 65T is an example of the third filter, configured in the transmit path ET that connects transmit input terminal 113 and switch 58, and connected to power amplifier 13 via switch 53 and matching circuit 33. Transmit filter 65T allows the transmit signal of the communication frequency band E in the transmit signal amplified by power amplifier 13 to pass through.

[0052] Transmit filter 66T is an example of a third filter, configured in the transmit path FT that connects transmit input terminal 113 and switch 58, and connected to power amplifier 13 via switch 53 and matching circuit 33. Transmit filter 66T allows the transmit signal of the communication frequency band F in the transmit signal amplified by power amplifier 13 to pass through. Furthermore, transmit paths ET and FT are an example of a third transmit path for transmitting high-frequency band groups of transmit signals.

[0053] The receiver filter 61R is configured in the receiver path AR that connects switch 57 and receiver output terminal 121, and is connected to the low-noise amplifier 21 via switch 54 and matching circuit 41. The receiver filter 61R allows the received signal of the communication frequency band A in the received signal input from antenna connection terminal 101 to pass through.

[0054] Receiver filter 62R is configured in receive path BR, which connects switch 57 and receive output terminal 121, and is connected to low-noise amplifier 21 via switch 54 and matching circuit 41. Receiver filter 62R allows received signals in the receive band of communication frequency band B from the received signal input from antenna connection terminal 101 to pass through. Furthermore, receive paths AR and BR are an example of a first receive path for transmitting received signals in the low-frequency band group.

[0055] Receiver filter 63R is an example of the fourth filter, configured in the receive path CR that connects switch 58 and receive output terminal 122, and connected to low-noise amplifier 22 via switch 55 and matching circuit 42. Receiver filter 63R allows received signals in the receive band of communication frequency band C from the received signals input from antenna connection terminals 102 or 103 to pass through.

[0056] Receiver filter 64R is an example of the fourth filter, configured in the receive path DR that connects switch 58 and receive output terminal 122, and connected to low-noise amplifier 22 via switch 55 and matching circuit 42. Receiver filter 64R allows received signals from the communication frequency band D of the received signals input from antenna connection terminals 102 or 103 to pass through. Additionally, receive paths CR and DR are an example of the second receive path for transmitting received signals from the intermediate frequency band group.

[0057] The receiver filter 65R is an example of the fifth filter, configured in the receiver path ER that connects switch 58 and receiver output terminal 123, and connected to low-noise amplifier 23 via switch 56 and matching circuit 43. Receiver filter 65R allows received signals in the receiver band of communication frequency band E from the received signals input from antenna connection terminals 102 or 103 to pass through.

[0058] Receiver filter 66R is an example of the fifth filter, configured in the receive path FR that connects switch 58 and receive output terminal 123, and connected to low-noise amplifier 23 via switch 56 and matching circuit 43. Receiver filter 66R allows received signals from the communication frequency band F of the received signals input from antenna connection terminals 102 or 103 to pass through. Additionally, receive paths ER and FR are an example of the third receive path for transmitting received signals from a high-frequency band group.

[0059] Transmit filter 61T and receive filter 61R constitute a duplexer 61 with communication band A as the passband. Furthermore, transmit filter 62T and receive filter 62R constitute a duplexer 62 with communication band B as the passband. Furthermore, transmit filter 63T and receive filter 63R constitute a duplexer 63 with communication band C as the passband. Furthermore, transmit filter 64T and receive filter 64R constitute a duplexer 64 with communication band D as the passband. Furthermore, transmit filter 65T and receive filter 65R constitute a duplexer 65 with communication band E as the passband. Furthermore, transmit filter 66T and receive filter 66R constitute a duplexer 66 with communication band F as the passband.

[0060] Furthermore, in the high-frequency module 1 of this embodiment, the transmit and receive filters of each communication frequency band constitute a duplexer for transmitting transmit and receive signals in frequency division duplex (FDD) mode, but they can also be transmitted in time division duplex (TDD) mode. In this case, at least one of the pre-stage and post-stage of the transmit and receive filters is configured with a switch for switching between transmitting and receiving.

[0061] In addition, the aforementioned transmitting filters 61T to 66T and receiving filters 61R to 66R may be, for example, any of the following: surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters; and are not limited to these.

[0062] Matching circuit 31 is connected between power amplifier 11 and transmitting filters 61T and 62T to achieve impedance matching between power amplifier 11 and transmitting filters 61T and 62T. Matching circuit 31 includes at least a first inductor.

[0063] Matching circuit 32 is connected between power amplifier 12 and transmitting filters 63T and 64T to achieve impedance matching between power amplifier 12 and transmitting filters 63T and 64T. Matching circuit 32 includes at least a second inductor.

[0064] Matching circuit 33 is connected between power amplifier 13 and transmitting filters 65T and 66T to achieve impedance matching between power amplifier 13 and transmitting filters 65T and 66T. Matching circuit 33 includes at least a third inductor.

[0065] Matching circuit 41 is connected between low noise amplifier 21 and receiving filters 61R and 62R to achieve impedance matching between low noise amplifier 21 and receiving filters 61R and 62R.

[0066] Matching circuit 42 is connected between low-noise amplifier 22 and receiving filters 63R and 64R to achieve impedance matching between low-noise amplifier 22 and receiving filters 63R and 64R. Matching circuit 42 includes at least a fourth inductor.

[0067] Matching circuit 43 is connected between low-noise amplifier 23 and receiving filters 65R and 66R to achieve impedance matching between low-noise amplifier 23 and receiving filters 65R and 66R. Matching circuit 43 includes at least a fifth inductor.

[0068] Switch 51 is connected between matching circuit 31 and transmit filters 61T and 62T, switching the connection between power amplifier 11 and transmit filter 61T, and between power amplifier 11 and transmit filter 62T. Switch 51 is, for example, an SPDT (Single Pole Double Throw) type switch circuit with a common terminal connected to matching circuit 31, one selection terminal connected to transmit filter 61T, and another selection terminal connected to transmit filter 62T.

[0069] Switch 52 is connected between matching circuit 32 and transmit filters 63T and 64T to switch the connection between power amplifier 12 and transmit filter 63T, and between power amplifier 12 and transmit filter 64T. Switch 52 is, for example, an SPDT type switch circuit with a common terminal connected to matching circuit 32, one selection terminal connected to transmit filter 63T, and another selection terminal connected to transmit filter 64T.

[0070] Switch 53 is connected between matching circuit 33 and transmit filters 65T and 66T to switch the connection between power amplifier 13 and transmit filter 65T, and between power amplifier 13 and transmit filter 66T. Switch 53 is, for example, an SPDT type switch circuit with a common terminal connected to matching circuit 33, one selection terminal connected to transmit filter 65T, and another selection terminal connected to transmit filter 66T.

[0071] Switch 54 is connected between matching circuit 41 and receiving filters 61R and 62R to switch the connection between low-noise amplifier 21 and receiving filter 61R, and between low-noise amplifier 21 and receiving filter 62R. Switch 54 is, for example, an SPDT type switch circuit with a common terminal connected to matching circuit 41, one selection terminal connected to receiving filter 61R, and another selection terminal connected to receiving filter 62R.

[0072] Switch 55 is connected between matching circuit 42 and receiving filters 63R and 64R to switch the connection between low-noise amplifier 22 and receiving filter 63R, and between low-noise amplifier 22 and receiving filter 64R. Switch 55 is, for example, an SPDT type switch circuit with a common terminal connected to matching circuit 42, one selection terminal connected to receiving filter 63R, and another selection terminal connected to receiving filter 64R.

[0073] Switch 56 is connected between matching circuit 43 and receiving filters 65R and 66R to switch the connection between low-noise amplifier 23 and receiving filter 65R, and between low-noise amplifier 23 and receiving filter 66R. Switch 56 is, for example, an SPDT type switch circuit with a common terminal connected to matching circuit 43, one selection terminal connected to receiving filter 65R, and another selection terminal connected to receiving filter 66R.

[0074] Switch 57 is connected between antenna connection terminal 101 and duplexers 61 and 62 to switch the connection between antenna 2a and duplexer 61, and between antenna 2a and duplexer 62. Switch 57 is, for example, an SPDT type switch circuit with a common terminal connected to antenna connection terminal 101, one selection terminal connected to duplexer 61, and another selection terminal connected to duplexer 62.

[0075] Switch 58 is connected between antenna connection terminals 102 and 103 and duplexers 63-66, switching the connection between antenna 2b and duplexers 63-66, and the connection between antenna 2c and duplexers 63-66. Switch 58 is, for example, a DP4T (Double Pole 4 Throw) type switch circuit with one common terminal connected to antenna connection terminal 102, another common terminal connected to antenna connection terminal 103, a first selection terminal connected to duplexer 63, a second selection terminal connected to duplexer 64, a third selection terminal connected to duplexer 65, and a fourth selection terminal connected to duplexer 66.

[0076] Furthermore, the power amplifiers 11 to 13 and the low-noise amplifiers 21 to 23 are, for example, composed of field-effect transistors (FETs) or heterojunction bipolar transistors (HBTs) made of Si-based CMOS (Complementary Metal Oxide Semiconductor) or GaAs materials.

[0077] Furthermore, low-noise amplifiers 21, switches 54, and 57 can also be formed within a single semiconductor IC (Integrated Circuit). Additionally, low-noise amplifiers 22 and 23, switches 55, 56, and 58 can also be formed within a single semiconductor IC. The aforementioned semiconductor IC is, for example, constructed using CMOS technology. Specifically, it is constructed using SOI (Silicon On Insulator) technology. This allows for the inexpensive manufacture of the semiconductor IC. Alternatively, the semiconductor IC can also be constructed from at least any one of GaAs, SiGe, and GaN. This enables the output of high-frequency signals with high-quality amplification and noise reduction performance.

[0078] In the circuit structure described above for high-frequency module 1, power amplifier 11, matching circuit 31, switch 51, transmitting filters 61T and 62T, and switch 57 constitute a first transmitting circuit that outputs a low-frequency band group (communication band A and communication band B) transmitting signal toward antenna connection terminal 101. Furthermore, power amplifier 12, matching circuit 32, switch 52, transmitting filters 63T and 64T, and switch 58 constitute a second transmitting circuit that outputs a mid-frequency band group (communication band C and communication band D) transmitting signal toward antenna connection terminal 102 or 103. Additionally, power amplifier 13, matching circuit 33, switch 53, transmitting filters 65T and 66T, and switch 58 constitute a third transmitting circuit that outputs a high-frequency band group (communication band E and communication band F) transmitting signal toward antenna connection terminal 102 or 103.

[0079] Furthermore, the low-noise amplifier 21, matching circuit 41, switch 54, receiving filters 61R and 62R, and switch 57 constitute a first receiving circuit that receives signals from antenna 2a via antenna connection terminal 101 for the low-frequency band group (communication band A and communication band B). Furthermore, the low-noise amplifier 22, matching circuit 42, switch 55, receiving filters 63R and 64R, and switch 58 constitute a second receiving circuit that receives signals from antenna 2b or 2c via antenna connection terminals 102 or 103 for the intermediate-frequency band group (communication band C and communication band D). Furthermore, the low-noise amplifier 23, matching circuit 43, switch 56, receiving filters 65R and 66R, and switch 58 constitute a third receiving circuit that receives signals from antenna 2b or 2c via antenna connection terminals 102 or 103 for the high-frequency band group (communication band E and communication band F).

[0080] The first transmitting circuit and the first receiving circuit constitute a first transmission circuit for transmitting high-frequency signals of the low-frequency band group. Furthermore, the second transmitting circuit and the second receiving circuit constitute a second transmission circuit for transmitting high-frequency signals of the intermediate-frequency band group. Furthermore, the third transmitting circuit and the third receiving circuit constitute a third transmission circuit for transmitting high-frequency signals of the high-frequency band group.

[0081] According to the circuit structure described above, the high-frequency module 1 in this embodiment can perform at least one of the following: simultaneous transmission, simultaneous reception, and simultaneous transmission and reception for at least two of the high-frequency signals in the low-frequency band group, the high-frequency signals in the mid-frequency band group, and the high-frequency signals in the high-frequency band group.

[0082] Furthermore, in the high-frequency module of the present invention, the transmitting circuit and the receiving circuit may be connected to the antenna connection terminals 101-103 without using switches 57 and 58, and the transmitting circuit and the receiving circuit may be connected to the antennas 2a-2c via different terminals. Moreover, the circuit structure of the high-frequency module of the present invention only requires at least power amplifiers 11-13 and transmitting filters 61T, 63T, and 65T.

[0083] Furthermore, antennas 2a to 2c can also be a single antenna. In this case, the single antenna and duplexers 61 to 66 can also be connected via a switch. Moreover, a tripod for demultiplexing and multiplexing signals from the low-frequency band, the mid-frequency band, and the high-frequency band can also be configured between the single antenna and the switch.

[0084] Here, when each circuit element constituting the high-frequency module 1 is composed of a single module, for example, sometimes the harmonics of the high-output transmission signal amplified by the power amplifier 11 in the low-frequency band overlap with the transmission signals in the mid-frequency band or the high-frequency band, resulting in a decrease in the quality of the transmission signal.

[0085] Furthermore, for example, harmonics of the transmitted signal from the low-frequency band group may sometimes flow into the second receiving circuit of the mid-frequency band group or the third receiving circuit of the high-frequency band group, thereby degrading the receiving sensitivity of the second or third receiving circuit. For example, cases can be listed where the frequency of the harmonics of the transmitted signal amplified by power amplifier 11 overlaps with at least a portion of the frequency range of the mid-frequency band group or the high-frequency band group. Furthermore, for example, cases can be listed where the frequency of intermodulation distortion between the transmitted signal amplified by power amplifier 11 and other high-frequency signals overlaps with at least a portion of the frequency range of the mid-frequency band group or the high-frequency band group. That is, the frequency of the m (m is an integer greater than or equal to 2) harmonic of the low-frequency band group signal is contained within the frequency range of the mid-frequency band group, and the frequency of the n (n is an integer greater than or equal to 2) harmonic of the low-frequency band group signal is contained within the frequency range of the high-frequency band group.

[0086] In contrast, the high-frequency module 1 according to this embodiment has a structure that suppresses electromagnetic field coupling between the first transmitting circuit of the low-frequency band group, the second transmission circuit of the mid-frequency band group, and the third transmission circuit of the high-frequency band group. Hereinafter, the structure of the high-frequency module 1 according to this embodiment for suppressing the aforementioned electromagnetic field coupling will be described.

[0087] [2. Circuit component configuration structure of the high-frequency module 1A according to Embodiment 1]

[0088] Figure 2 These are top and cross-sectional views of the high-frequency module 1A involved in Embodiment 1. Figure 2 The right side shows a configuration diagram of the circuit components when viewed from the positive z-axis direction on the main surface 91a of the module substrate 91. Furthermore, in Figure 2 The left side shows Figure 2 The right figure shows a cross-sectional view along line II-II. The high-frequency module 1A specifically illustrates the configuration structure of each circuit component constituting the high-frequency module 1 according to the embodiment.

[0089] like Figure 2 As shown, the high-frequency module 1A involved in this embodiment, in addition to having Figure 1 In addition to the circuit structure shown, it also includes a module substrate 91, a metal shielding plate 80, a metal shielding layer 95, a resin component 92, and an external connection terminal 150.

[0090] The module substrate 91 is a substrate having a main surface 91a (first main surface) and on which the first to third transmission circuits are mounted. As the module substrate 91, for example, a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used.

[0091] The resin component 92 is disposed on the main surface 91a of the module substrate 91, covering at least a portion of the circuit components constituting the first to third transmission circuits and the main surface 91a of the module substrate 91, and has the function of ensuring the mechanical strength and moisture resistance of the circuit components.

[0092] External connection terminals 150 are disposed on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with an external substrate disposed on the negative z-axis side of the high-frequency module 1A via multiple external connection terminals 150. Furthermore, the ground terminal 150g among the multiple external connection terminals 150 is set to the ground potential of the external substrate. Additionally, as... Figure 2 As shown, the external connection terminal 150 can be either a planar electrode formed on the main surface 91b or a bump electrode formed on the main surface 91b.

[0093] like Figure 2 As shown, in the high-frequency module 1A of this embodiment, power amplifiers 11-13, low-noise amplifiers 21-23, duplexers 61-66, matching circuits 31-33, 41-43, and switches 51-58 are disposed on the main surface 91a of the module substrate 91. Alternatively, the low-noise amplifiers 21-23, duplexers 61-66, and switches 51-58 can also be disposed on either the main surfaces 91a or 91b of the module substrate 91.

[0094] In addition, although Figure 2 Not shown in the diagram, but constitutes Figure 1 The wiring for the transmission paths AT to FT and the reception paths AR to FR shown is formed inside the module substrate 91, on the main surfaces 91a and 91b. Furthermore, the wiring can be either bonding leads whose two ends are connected to either the main surfaces 91a and 91b or any of the circuit elements constituting the high-frequency module 1A, or it can be terminals, electrodes, or wiring formed on the surface of the circuit elements constituting the high-frequency module 1A.

[0095] A metal shielding layer 95 covers the surface of the resin component 92 and is set to ground potential. The metal shielding layer 95 is, for example, a thin metal film formed by sputtering.

[0096] The metal shielding plate 80, an example of the first and second metal shielding plates, is a metal wall erected vertically on the top surface facing the resin member 92 in the positive z-axis direction from the main surface 91a. The metal shielding plate 80 is connected to the grounding electrode of the main surface 91a and the metal shielding layer 95. That is, the metal shielding plate 80 is connected to the ground at both its top and bottom, thus enhancing the electromagnetic field shielding function. Furthermore, the metal shielding plate 80 is connected to either the shielding surface of the metal shielding layer 95 that is in contact with the top surface of the resin member 92 or the shielding surface that is in contact with the side surface of the resin member 92.

[0097] The metal shielding plate 80 is disposed on the main surface 91a, and when viewed from above the module substrate 91, it is disposed between the power amplifier 11 and the power amplifier 12, and also between the power amplifier 11 and the power amplifier 13.

[0098] According to the above structure, power amplifiers 11 and 12 are configured with a metal shielding plate 80 set to ground potential sandwiched between them. Therefore, it is possible to suppress the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12, thereby preventing a degradation in the quality of the transmitted signal. Furthermore, power amplifiers 11 and 13 are configured with a metal shielding plate 80 set to ground potential sandwiched between them. Therefore, it is possible to suppress the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13, thereby preventing a degradation in the quality of the transmitted signal.

[0099] In addition, the first metal shielding plate disposed between power amplifier 11 and power amplifier 12 and the second metal shielding plate disposed between power amplifier 11 and power amplifier 13 can be the same metal shielding plate 80 as in this embodiment, or they can be separate.

[0100] Furthermore, in the high-frequency module 1A of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 80 is disposed between the first inductor of the matching circuit 31 and the second inductor of the matching circuit 32, and is disposed between the first inductor of the matching circuit 31 and the third inductor of the matching circuit 33.

[0101] Therefore, electromagnetic field coupling between the first inductor and the second inductor, as well as electromagnetic field coupling between the first inductor and the third inductor, can be suppressed. Consequently, the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12 can be further suppressed, and the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13 can be further suppressed.

[0102] Furthermore, in the high-frequency module 1A of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 80 is disposed between the first inductor of the matching circuit 31 and the fourth inductor of the matching circuit 42, and is disposed between the first inductor of the matching circuit 31 and the fifth inductor of the matching circuit 43.

[0103] Therefore, electromagnetic field coupling between the first and fourth inductors, as well as electromagnetic field coupling between the first and fifth inductors, can be suppressed. Consequently, harmonics of the transmitted signal output from the power amplifier 11, and unwanted waves of intermodulation distortion between the transmitted signal and other high-frequency signals, can be suppressed from flowing into the second and third receiving circuits, thereby reducing the receiving sensitivity of either the second or third receiving circuit.

[0104] Furthermore, the metal shielding plate 80 divides the main surface 91a into region P (the first and third regions) and region Q (the second and fourth regions). That is, the first metal shielding plate dividing power amplifiers 11 and 12 divides the main surface 91a into the first and second regions, and the second metal shielding plate dividing power amplifiers 11 and 13 divides the main surface 91a into the third and fourth regions. Here, as... Figure 2 As shown, transmit filters 61T and 62T are configured in region P, and transmit filters 63T, 64T, 65T and 66T are configured in region Q.

[0105] Therefore, electromagnetic field coupling between transmitting filters 61T and 62T and transmitting filters 63T, 64T, 65T and 66T can be suppressed. Thus, the harmonics of the low-frequency band transmitted signal can be prevented from overlapping with the mid-frequency and high-frequency band transmitted signals, thereby reducing the quality of the transmitted signal.

[0106] In addition, such as Figure 2 As shown, transmitting filters 61T and 62T are configured in region P, and receiving filters 63R, 64R, 65R and 66R are configured in region Q.

[0107] Therefore, electromagnetic field coupling between transmitting filters 61T and 62T and receiving filters 63R, 64R, 65R and 66R can be suppressed. Consequently, harmonics of the low-frequency band transmitted signal and unwanted waves from intermodulation distortion between the transmitted signal and other high-frequency signals can be suppressed from flowing into the receiving circuits of the mid-frequency and high-frequency bands, thus preventing degradation of the receiving circuit's sensitivity.

[0108] Furthermore, in the high-frequency module 1A of this embodiment, the low-noise amplifier 21, switches 54 and 57 can also be formed on a single semiconductor IC 71. Additionally, the low-noise amplifiers 22 and 23, and switches 55, 56 and 58 can also be formed on a single semiconductor IC 72. This allows for the miniaturization of the high-frequency module 1A.

[0109] In addition, a hole that penetrates in the normal direction (y-axis direction) of the metal shielding plate 80 may also be formed between the metal shielding plate 80 and the main surface 91a.

[0110] Therefore, since a hole is formed between the metal shielding plate 80 and the main surface 91a, good flowability of the liquid resin near the metal shielding plate 80 can be ensured during the process of forming the resin component 92 on the main surface 91a. Consequently, the generation of voids where the resin component 92 is not formed can be suppressed near the metal shielding plate 80.

[0111] Furthermore, a hole penetrating in the normal direction (y-axis direction) of the metal shielding plate 80 may also be formed between the top surface of the metal shielding plate 80 and the resin component 92.

[0112] Therefore, since a hole is formed between the metal shielding plate 80 and the aforementioned top surface, good flowability of the liquid resin near the metal shielding plate 80 can be ensured during the process of forming the resin component 92 on the main surface 91a. Consequently, the generation of voids or other defects in the resin component 92 near the metal shielding plate 80 can be suppressed.

[0113] In addition, the metal shielding plate 80 can also have a structure in which multiple metal plates are discretely configured.

[0114] Therefore, since gaps are formed between multiple metal plates, good flowability of the liquid resin near the metal shielding plate 80 can be ensured during the process of forming the resin component 92 on the main surface 91a.

[0115] [3. Circuit component configuration structure of high-frequency module 1B according to embodiment 2]

[0116] Figure 3 These are top and cross-sectional views of the high-frequency module 1B involved in Embodiment 2. Figure 3The right side shows a configuration diagram of the circuit components when viewed from the positive z-axis direction on the main surface 91a of the module substrate 91. Furthermore, in Figure 3 The left side shows Figure 3 The right-hand figure shows a cross-sectional view along line III-III. The high-frequency module 1B specifically illustrates the configuration structure of each circuit component constituting the high-frequency module 1 according to the embodiment. Compared to the high-frequency module 1A according to Embodiment 1, the configuration structure of the metal shielding plate 81 in the high-frequency module 1B according to this embodiment differs. Hereinafter, regarding the high-frequency module 1B according to this embodiment, descriptions will be omitted of points identical to those in the high-frequency module 1A according to Embodiment 1, focusing instead on the points of difference.

[0117] like Figure 3 As shown, the high-frequency module 1B involved in this embodiment, in addition to having Figure 1 In addition to the circuit structure shown, it also includes a module substrate 91, a metal shielding plate 81, a metal shielding layer 95, a resin component 92, and an external connection terminal 150.

[0118] like Figure 3 As shown, in the high-frequency module 1B of this embodiment, power amplifiers 11-13, low-noise amplifiers 21-23, duplexers 61-66, matching circuits 31-33, 41-43, and switches 51-58 are disposed on the main surface 91a of the module substrate 91. Alternatively, the low-noise amplifiers 21-23, duplexers 61-66, and switches 51-58 can also be disposed on either the main surfaces 91a or 91b of the module substrate 91.

[0119] The metal shielding plate 81 is an example of the first and second metal shielding plates, and is a metal wall that is erected on the top surface facing the resin member 92 in the positive z-axis direction from the main surface 91a. The metal shielding plate 81 is connected to the grounding electrode of the main surface 91a and the metal shielding layer 95. That is, the metal shielding plate 81 is connected to the ground at both its top and bottom, thereby enhancing the electromagnetic field shielding function. In addition, the metal shielding plate 81 is connected to the shielding surface of the metal shielding layer 95 that is in contact with the top surface of the resin member 92 or the shielding surface that is in contact with the side surface of the resin member 92.

[0120] A metal shielding plate 81 is disposed on the main surface 91a, and when viewed from above the module substrate 91, it is disposed between power amplifier 11 and power amplifier 12, and between power amplifier 11 and power amplifier 13.

[0121] According to the above structure, it is possible to suppress the superposition of harmonics of the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12, thereby preventing a degradation in the quality of the transmitted signal. Furthermore, it is possible to suppress the superposition of harmonics of the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13, thereby preventing a degradation in the quality of the transmitted signal.

[0122] Furthermore, in the high-frequency module 1B of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 81 is disposed between the first inductor of the matching circuit 31 and the second inductor of the matching circuit 32, and is disposed between the first inductor of the matching circuit 31 and the third inductor of the matching circuit 33.

[0123] Therefore, it is possible to suppress the electromagnetic field coupling between the first inductor and the second inductor, as well as the electromagnetic field coupling between the first inductor and the third inductor.

[0124] Furthermore, in the high-frequency module 1B of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 81 is disposed between the first inductor of the matching circuit 31 and the fourth inductor of the matching circuit 42, and is disposed between the first inductor of the matching circuit 31 and the fifth inductor of the matching circuit 43.

[0125] Therefore, it is possible to suppress the electromagnetic field coupling between the first inductor and the fourth inductor, as well as the electromagnetic field coupling between the first inductor and the fifth inductor.

[0126] Furthermore, the metal shielding plate 81 divides the main surface 91a into region P (region 1 and region 3) and region Q (region 2 and region 4). That is, the first metal shielding plate that divides the power amplifier 11 and the power amplifier 12 divides the main surface 91a into region 1 and region 2, and the second metal shielding plate that divides the power amplifier 11 and the power amplifier 13 divides the main surface 91a into region 3 and region 4.

[0127] Here, as Figure 3 As shown, power amplifier 11 and matching circuit 31 are configured in region P, and receiving filters 63R, 64R, 65R and 66R are configured in region O.

[0128] Therefore, electromagnetic field coupling between power amplifier 11 and receiving filters 63R, 64R, 65R, and 66R can be suppressed. Consequently, harmonics of the low-frequency band transmitted signal and unwanted waves from intermodulation distortion between the transmitted signal and other high-frequency signals can be suppressed from flowing into the receiving circuits of the mid-frequency and high-frequency bands, thereby reducing the receiving sensitivity of the receiving circuits.

[0129] [4. Circuit component configuration structure of the high-frequency module 1C according to Embodiment 3]

[0130] Figure 4A This is a top view of the high-frequency module 1C according to Embodiment 3. Furthermore, Figure 4B This is a cross-sectional view of the high-frequency module 1C involved in Embodiment 3, specifically, it is Figure 4A A cross-sectional view at the IVB-IVB line. Additionally, in Figure 4A The upper section shows a diagram of the circuit elements arranged when viewing the main surfaces 91a and 91b of the module substrate 91 from the positive z-axis direction. On the other hand, in Figure 4A The lower section shows a perspective view of the arrangement of circuit elements when viewed from the positive z-axis direction of the main surface 91b.

[0131] The high-frequency module 1C described in Embodiment 3 specifically illustrates the configuration structure of each circuit element constituting the high-frequency module 1 according to the embodiment. Compared to the high-frequency module 1A according to Embodiment 1, the high-frequency module 1C in this embodiment differs in that the circuit components constituting the high-frequency module 1C are arranged on both sides of the module substrate 91. Hereinafter, descriptions of the high-frequency module 1C in this embodiment that are the same as those in the high-frequency module 1A according to Embodiment 1 will be omitted, and descriptions will focus on the differences.

[0132] like Figure 4A as well as Figure 4B As shown, the high-frequency module 1C involved in this embodiment, in addition to having Figure 1 In addition to the circuit structure shown, it also includes a module substrate 91, a metal shielding plate 82, a metal shielding layer 95, resin components 92 and 93, and an external connection terminal 150.

[0133] The module substrate 91 is a substrate having a main surface 91a (first main surface) and a main surface 91b (second main surface), and mounting the first to third transmission circuits on the main surfaces 91a and 91b.

[0134] A resin component 92 is disposed on the main surface 91a of the module substrate 91, covering at least a portion of the circuit components constituting the first to third transmission circuits and the main surface 91a, and has the function of ensuring the mechanical strength and moisture resistance of the circuit components. A resin component 93 is disposed on the main surface 91b, covering at least a portion of the circuit components constituting the first to third transmission circuits and the main surface 91b, and has the function of ensuring the mechanical strength and moisture resistance of the circuit components.

[0135] External connection terminals 150 are disposed on the main surface 91b of the module substrate 91. The high-frequency module 1C exchanges electrical signals with an external substrate disposed on the negative z-axis side of the high-frequency module 1C via multiple external connection terminals 150. Furthermore, the ground terminal 150g among the multiple external connection terminals 150 is set to the ground potential of the external substrate. Additionally, the external connection terminals 150 can be configured as follows: Figure 4B The diagram shows a planar electrode formed on the main surface 91b. Alternatively, a bump electrode may be formed on the main surface 91b. Furthermore, if the external connection terminal 150 is formed by a bump electrode, the resin member 93 may not be necessary.

[0136] In addition, although Figure 4A as well as Figure 4B Not shown in the diagram, but constitutes Figure 1 The wiring for the transmission paths AT, BT, and CT, and the reception paths AR, BR, and CR, shown are formed inside the module substrate 91, on the main surfaces 91a and 91b. Furthermore, the wiring can be either bonding leads whose two ends are connected to either the main surfaces 91a and 91b or any of the circuit elements constituting the high-frequency module 1C, or it can be terminals, electrodes, or wiring formed on the surfaces of the circuit elements constituting the high-frequency module 1C.

[0137] In addition, such as Figure 4A As shown, the plurality of external connection terminals 150 include antenna connection terminals 101, 102 and 103, transmit input terminals 111, 112 and 113, and receive output terminals 121, 122 and 123. Furthermore, several of the plurality of external connection terminals 150 are set to the ground potential of the external substrate.

[0138] like Figure 4A As shown, in the high-frequency module 1C of this embodiment, power amplifiers 11-13, duplexers 61-66, matching circuits 31-33, and matching circuits 41-43 are disposed on the main surface 91a of the module substrate 91. Furthermore, low-noise amplifiers 21-23 and switches 51-58 are disposed on the main surface 91b of the module substrate 91.

[0139] Therefore, the power amplifiers 11-13 and the low-noise amplifiers 21-23 are separately arranged on both sides of the module substrate 91, thereby improving the isolation between the transmitter and receiver.

[0140] Furthermore, preferably, the module substrate 91 has a multilayer structure with multiple dielectric layers stacked on top of each other, and a ground electrode pattern is formed on at least one of the multiple dielectric layers. This improves the electromagnetic field shielding function of the module substrate 91.

[0141] The metal shielding plate 82 is an example of the first and second metal shielding plates, and is a metal wall that is erected on the top surface of the main surface 91a facing the positive z-axis direction of the resin member 92. The metal shielding plate 82 is connected to the grounding electrode of the main surface 91a and the metal shielding layer 95. That is, the metal shielding plate 82 is connected to the ground at both its top and bottom, thereby enhancing the electromagnetic field shielding function. In addition, the metal shielding plate 82 is connected to the shielding surface of the metal shielding layer 95 that is in contact with the top surface of the resin member 92 or the shielding surface that is in contact with the side surface of the resin member 92.

[0142] The metal shielding plate 82 is disposed on the main surface 91a, and when viewed from above the module substrate 91, it is disposed between the power amplifier 11 and the power amplifier 12, and also between the power amplifier 11 and the power amplifier 13.

[0143] According to the above structure, it is possible to suppress the superposition of harmonics of the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12, thereby preventing a degradation in the quality of the transmitted signal. Furthermore, it is possible to suppress the superposition of harmonics of the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13, thereby preventing a degradation in the quality of the transmitted signal.

[0144] In addition, the first metal shielding plate disposed between power amplifier 11 and power amplifier 12 and the second metal shielding plate disposed between power amplifier 11 and power amplifier 13 can be the same metal shielding plate 82 as in this embodiment, or they can be separate.

[0145] Furthermore, in the high-frequency module 1C of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 82 is disposed between the first inductor of the matching circuit 31 and the second inductor of the matching circuit 32, and is disposed between the first inductor of the matching circuit 31 and the third inductor of the matching circuit 33.

[0146] Therefore, electromagnetic field coupling between the first inductor and the second inductor, as well as electromagnetic field coupling between the first inductor and the third inductor, can be suppressed. Consequently, the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12 can be further suppressed, and the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13 can be further suppressed.

[0147] Furthermore, in the high-frequency module 1C of this embodiment, when viewed from above the module substrate 91, the metal shielding plate 82 is disposed between the first inductor of the matching circuit 31 and the fourth inductor of the matching circuit 42, and is disposed between the first inductor of the matching circuit 31 and the fifth inductor of the matching circuit 43.

[0148] Therefore, electromagnetic field coupling between the first and fourth inductors, as well as electromagnetic field coupling between the first and fifth inductors, can be suppressed. Consequently, harmonics of the transmitted signal output from the power amplifier 11, and unwanted waves of intermodulation distortion between the transmitted signal and other high-frequency signals, can be suppressed from flowing into the second and third receiving circuits, thereby reducing the receiving sensitivity of either the second or third receiving circuit.

[0149] Furthermore, the metal shielding plate 82 divides the main surface 91a into region P (the first and third regions) and region O (the second and fourth regions). That is, the first metal shielding plate dividing power amplifiers 11 and 12 divides the main surface 91a into the first and second regions, and the second metal shielding plate dividing power amplifiers 11 and 13 divides the main surface 91a into the third and fourth regions. Here, as... Figure 4A As shown, transmit filters 61T and 62T are configured in region P, and transmit filters 63T, 64T, 65T and 66T are configured in region Q.

[0150] Therefore, electromagnetic field coupling between transmitting filters 61T and 62T and transmitting filters 63T, 64T, 65T and 66T can be suppressed. Thus, the harmonics of the low-frequency band transmitted signal can be prevented from overlapping with the mid-frequency and high-frequency band transmitted signals, thereby reducing the quality of the transmitted signal.

[0151] In addition, such as Figure 4A As shown, transmitting filters 61T and 62T are configured in region P, and receiving filters 63R, 64R, 65R and 66R are configured in region Q.

[0152] Therefore, electromagnetic field coupling between transmitting filters 61T and 62T and receiving filters 63R, 64R, 65R and 66R can be suppressed. Consequently, harmonics of the low-frequency band transmitted signal and unwanted waves from intermodulation distortion between the transmitted signal and other high-frequency signals can be suppressed from flowing into the receiving circuits of the mid-frequency and high-frequency bands, thus preventing degradation of the receiving circuit's sensitivity.

[0153] Furthermore, in the high-frequency module 1C of this embodiment, low-noise amplifiers 21-23 and switches 54-56 can also be formed on a single semiconductor IC 75. Additionally, switches 57 and 58 can also be formed on a single semiconductor IC 74. Furthermore, switches 51-53 can also be formed on a single semiconductor IC 73. This allows for miniaturization of the high-frequency module 1C.

[0154] Furthermore, in the high-frequency module 1C of this embodiment, power amplifiers 11 to 13 are disposed on the main surface 91a. Power amplifiers 11 to 13 are among the circuit components of the high-frequency module 1C that generate a large amount of heat. To improve the heat dissipation of the high-frequency module 1C, it is important that the heat generated by power amplifiers 11 to 13 is dissipated to the external substrate through a heat dissipation path with low thermal resistance. Assuming that power amplifiers 11 to 13 are mounted on the main surface 91b, the electrode wiring connected to power amplifiers 11 to 13 is disposed on the main surface 91b. Therefore, the heat dissipation path would include a heat dissipation path only through the planar wiring pattern (along the xy-plane direction) on the main surface 91b. This planar wiring pattern is formed of a thin metal film, and therefore has high thermal resistance. Therefore, when power amplifiers 11 to 13 are disposed on the main surface 91b, the heat dissipation performance decreases.

[0155] In contrast, as in this embodiment, when power amplifiers 11-13 are mounted on the main surface 91a, the power amplifiers 11-13 and the external connection terminal 150 can be connected via a through electrode passing through the main surface 91a and the main surface 91b. Therefore, the heat dissipation path for the power amplifiers 11-13 can be eliminated by avoiding heat dissipation paths that rely solely on planar wiring patterns along the xy-plane direction with high thermal resistance within the wiring of the module substrate 91. Consequently, a compact high-frequency module 1C with improved heat dissipation from the power amplifiers 11-13 to the external substrate can be provided.

[0156] Furthermore, in the high-frequency module 1C involved in the embodiment, such as Figure 4A as well as Figure 4B As shown, when viewed from above, the module substrate 91 preferably does not have circuit components formed in the area of ​​the main surface 91b opposite to the area where the power amplifiers 11 to 13 are formed.

[0157] Therefore, it is possible to avoid the above-mentioned circuit components from malfunctioning or being damaged due to the heat generated by the power amplifiers 11 to 13.

[0158] [5. Effects, etc.]

[0159] The high-frequency module 1A according to Embodiment 1 includes a module substrate 91 having a main surface 91a, a power amplifier 11 disposed on the main surface 91a, a power amplifier 12 disposed on the main surface 91a, a power amplifier 13 disposed on the main surface 91a, a transmission filter 61T connected to the output terminal of the power amplifier 11 and allowing the transmission signal of communication band A to pass through, a transmission filter 63T connected to the output terminal of the power amplifier 12 and allowing the transmission signal of communication band C to pass through, a transmission filter 65T connected to the output terminal of the power amplifier 13 and allowing the transmission signal of communication band E to pass through, a resin member 92 covering at least a portion of the main surface 91a, a metal shielding layer 95 covering the surface of the resin member 92 and set to a ground potential, and a metal shielding plate 80 disposed on the main surface 91a and disposed between the power amplifier 11 and the power amplifier 12 and between the power amplifier 11 and the power amplifier 13 when viewed from above. The metal shielding plate 80 is connected to the first ground electrode of the main surface 91a and the metal shielding layer 95.

[0160] Therefore, power amplifiers 11 and 12 are configured with a metal shield 80 set to ground potential sandwiched between them. This configuration suppresses the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12, thus preventing a degradation in the quality of the transmitted signal. Furthermore, power amplifiers 11 and 13 are also configured with a metal shield 80 set to ground potential sandwiched between them. This configuration further suppresses the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13, thus preventing a degradation in the quality of the transmitted signal.

[0161] Alternatively, the high-frequency module 1A may also include a first inductor disposed on the main surface 91a and connected to the matching circuit 31 between the power amplifier 11 and the transmitting filter 61T, a second inductor disposed on the main surface 91a and connected to the matching circuit 32 between the power amplifier 12 and the transmitting filter 63T, and a third inductor disposed on the main surface 91a and connected to the matching circuit 33 between the power amplifier 13 and the transmitting filter 65T. The metal shielding plate 80 is disposed between the first inductor and the second inductor in the above top view, and is disposed between the first inductor and the third inductor.

[0162] Therefore, electromagnetic field coupling between the first inductor and the second inductor, as well as electromagnetic field coupling between the first inductor and the third inductor, can be suppressed. Consequently, the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 12 can be further suppressed, and the overlap of harmonics in the transmitted signal output from power amplifier 11 with the transmitted signal output from power amplifier 13 can be further suppressed.

[0163] Alternatively, the high-frequency module 1A may also include low-noise amplifiers 22 and 23, a receiving filter 63R that allows the received signal of communication band C to pass through, a receiving filter 65R that allows the received signal of communication band E to pass through, a fourth inductor of a matching circuit 42 disposed on the main surface 91a and connected between the low-noise amplifier 22 and the receiving filter 63R, and a fifth inductor of a matching circuit 43 disposed on the main surface 91a and connected between the low-noise amplifier 23 and the receiving filter 65R. The metal shielding plate 80 is disposed between the first inductor and the fourth inductor in the above top view, and is disposed between the first inductor and the fifth inductor.

[0164] Therefore, electromagnetic field coupling between the first and fourth inductors, as well as electromagnetic field coupling between the first and fifth inductors, can be suppressed. Consequently, harmonics of the transmitted signal output from the power amplifier 11, and unwanted waves of intermodulation distortion between the transmitted signal and other high-frequency signals, can be suppressed from flowing into the second and third receiving circuits, thereby reducing the receiving sensitivity of either the second or third receiving circuit.

[0165] Alternatively, in the high-frequency module 1A, the metal shielding plate 80 divides the main surface 91a into region P and region Q in the above top view, with the transmitting filter 61T configured in region P and the transmitting filters 63T and 65T configured in region Q.

[0166] Therefore, electromagnetic field coupling between transmitting filters 61T, 63T, and 65T can be suppressed. Consequently, the harmonics of the low-frequency band transmitted signal can be prevented from overlapping with the mid-frequency and high-frequency band transmitted signals, thus preventing a degradation in the quality of the transmitted signal.

[0167] Furthermore, the high-frequency module 1A according to Embodiment 1 includes a module substrate 91 having a main surface 91a, a power amplifier 11 disposed on the main surface 91a, a power amplifier 12 disposed on the main surface 91a, a power amplifier 13 disposed on the main surface 91a, a transmit filter 61T for transmitting signals of communication band A, a receive filter 63R for receiving signals of communication band C, a receive filter 65R for receiving signals of communication band E, a first inductor disposed on the main surface 91a and connected to a matching circuit 31 between the power amplifier 11 and the transmit filter 61T, and a low-noise amplifier disposed on the main surface 91a and connected to the matching circuit 31. The system includes a fourth inductor in the matching circuit 42 between the receiver 22 and the receiving filter 63R, a fifth inductor disposed on the main surface 91a and connected between the low-noise amplifier 23 and the receiving filter 65R, a resin member 92 covering at least a portion of the main surface 91a, a metal shielding layer 95 covering the surface of the resin member 92 and set to ground potential, and a metal shielding plate 80 disposed on the main surface 91a and disposed between the first inductor and the fourth inductor when viewed from above the module substrate 91. The metal shielding plate 80 is connected to the first ground electrode of the main surface 91a and the metal shielding layer 95.

[0168] Therefore, electromagnetic field coupling between the first and fourth inductors, as well as electromagnetic field coupling between the first and fifth inductors, can be suppressed. Consequently, harmonics of the transmitted signal output from the power amplifier 11, and unwanted waves of intermodulation distortion between the transmitted signal and other high-frequency signals, can be suppressed from flowing into the second and third receiving circuits, thereby reducing the receiving sensitivity of either the second or third receiving circuit.

[0169] Alternatively, in the high-frequency module 1A, the metal shielding plate 80 divides the main surface 91a into region P and region Q in the above top view, with the transmitting filter 61T configured in region P and the receiving filters 63R and 65R configured in region Q.

[0170] Therefore, electromagnetic field coupling between the transmitting filter 61T and the receiving filters 63R and 65R can be suppressed. Consequently, the inflow of harmonics from the low-frequency band transmitted signal, as well as unwanted waves from intermodulation distortion between the transmitted signal and other high-frequency signals, into the receiving circuits of the mid-frequency and high-frequency bands, thus preventing degradation of the receiving circuit's sensitivity, can be suppressed.

[0171] Alternatively, in the high-frequency module 1C of embodiment 3, the module substrate 91 may also have a main surface 91b opposite to the main surface 91a, and the high-frequency module 1C may also have a plurality of external connection terminals 150 disposed on the main surface 91b, and low noise amplifiers 22 and 23 disposed on the main surface 91b.

[0172] Therefore, the power amplifier 11 and the low-noise amplifiers 22 and 23 are separately disposed on two sides of the module substrate 91, thereby improving the isolation between the transmitter and receiver. As a result, it is possible to suppress the inflow of harmful waves from the transmitted signal output from the power amplifier 11, as well as the intermodulation distortion of the transmitted signal and other high-frequency signals, into the second and third receiving circuits, thereby reducing the receiving sensitivity of the second or third receiving circuit.

[0173] Alternatively, the frequency of the m (m is an integer greater than 2) harmonic of the signal in communication band A may be contained in communication band C, and the frequency of the n (n is an integer greater than 2) harmonic of the signal in communication band A may be contained in communication band E.

[0174] Alternatively, in the high-frequency module 1A, the metal shielding plate 80 may include a first metal shielding plate disposed between the power amplifier 11 and the power amplifier 12, and a second metal shielding plate disposed between the power amplifier 11 and the power amplifier 13.

[0175] In addition, the communication device 5 includes an RFIC 3 for processing high-frequency signals transmitted and received by antennas 2a to 2c, and a high-frequency module 1 for transmitting high-frequency signals between antennas 2a to 2c and RFIC 3.

[0176] Therefore, a communication device 5 can be provided in which the degradation of the quality of the transmitted or received signal is suppressed.

[0177] (Other implementation methods, etc.)

[0178] The above description, through examples and embodiments, illustrates the high-frequency module and communication device of the present invention. However, the high-frequency module and communication device of the present invention are not limited to the above-described embodiments and embodiments. Other embodiments implemented by combining any of the constituent elements in the above-described embodiments and embodiments, variations obtained by implementing various modifications to the above-described embodiments and embodiments that are conceived by those skilled in the art without departing from the spirit of the present invention, and various devices that incorporate the above-described high-frequency module and communication device are also included in the present invention.

[0179] For example, in the high-frequency modules and communication devices described in the above embodiments and their examples, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the accompanying drawings.

[0180] Industrial availability

[0181] This invention can be widely used as a high-frequency module configured in the front end to handle multiple frequency bands in communication devices such as portable telephones.

[0182] Explanation of reference numerals in the attached figures

[0183] 1. High-frequency modules: 1A, 1B, and 1C;

[0184] Antennas 2a, 2b, and 2c;

[0185] 3. RF signal processing circuit (RFIC);

[0186] 4. Baseband signal processing circuit (BBIC);

[0187] 5 communication devices;

[0188] 11, 12, 13 Power amplifiers;

[0189] 21, 22, 23 Low-noise amplifiers;

[0190] Matching circuits for 31, 32, 33, 41, 42, and 43;

[0191] Switches 51, 52, 53, 54, 55, 56, 57, and 58;

[0192] 61, 62, 63, 64, 65, 66 Duplexers;

[0193] 61R, 62R, 63R, 64R, 65R, 66R receiver filters;

[0194] 61T, 62T, 63T, 64T, 65T, 66T transmitting filters;

[0195] 71, 72, 73, 74, 75 Semiconductor ICs;

[0196] 80, 81, 82 Metal shielding plates;

[0197] 91 Module baseboard;

[0198] 91a and 91b are the main faces;

[0199] 92, 93 Resin components;

[0200] 95. Metal shielding layer;

[0201] Antenna connection terminals 101, 102, and 103;

[0202] 111, 112, 113 are transmit input terminals;

[0203] 121, 122, 123 are the receive output terminals;

[0204] 150 External connection terminals;

[0205] 150g grounding terminal;

[0206] AR, BR, CR, DR, ER, FR receiving paths;

[0207] AT, BT, CT, DT, ET, FT transmission paths;

[0208] P and Q regions.

Claims

1. A high-frequency module, comprising: The module substrate has a first main surface; A first power amplifier is disposed on the first main surface; A second power amplifier is disposed on the first main surface; A third power amplifier is disposed on the first main surface; The first filter is connected to the output terminal of the first power amplifier to allow the transmission signal of the first communication frequency band to pass through; The second filter is connected to the output terminal of the second power amplifier, allowing the transmission signal of the second communication band, which has a higher communication frequency than the first communication band, to pass through; The third filter is connected to the output terminal of the third power amplifier, allowing the transmission signal of the third communication band, which has a higher communication frequency than the first communication band, to pass through; A resin component covering at least a portion of the first main surface; A metal shielding layer, covering the surface of the resin component, is set to ground potential; A first metal shielding plate is disposed on the first main surface and, when viewed from above, is disposed between the first power amplifier and the second power amplifier; and A second metal shielding plate is disposed on the first main surface, and positioned between the first power amplifier and the third power amplifier when viewed from above the module substrate. The first metal shielding plate is connected to the first grounding electrode on the first main surface and the metal shielding layer. The second metal shielding plate is connected to the second grounding electrode of the first main surface and the metal shielding layer. The first metal shielding plate and the second metal shielding plate are not positioned between the second power amplifier and the third power amplifier when viewed from above the module substrate.

2. The high-frequency module according to claim 1, wherein, It also has: A first inductor is disposed on the first main surface and connected between the first power amplifier and the first filter; A second inductor, disposed on the first main surface, is connected between the second power amplifier and the second filter; and A third inductor is disposed on the first main surface and connected between the third power amplifier and the third filter. The first metal shielding plate is positioned between the first inductor and the second inductor in the top view. The second metal shielding plate is positioned between the first inductor and the third inductor in the top view.

3. The high-frequency module according to claim 2, wherein, It also has: Second low-noise amplifier; Third low-noise amplifier; The fourth filter allows the received signal of the second communication frequency band to pass through; The fifth filter allows the received signal of the third communication frequency band to pass through; A fourth inductor, disposed on the first main surface, is connected between the second low-noise amplifier and the fourth filter; and The fifth inductor is disposed on the first main surface and connected between the third low-noise amplifier and the fifth filter. The first metal shielding plate is positioned between the first inductor and the fourth inductor in the top view. The second metal shielding plate is positioned between the first inductor and the fifth inductor in the top view.

4. The high-frequency module according to claim 3, wherein, The module substrate also has a second main surface facing the first main surface. The high-frequency module also has multiple external connection terminals configured on the second main surface. The second low-noise amplifier and the third low-noise amplifier are disposed on the second main surface.

5. The high-frequency module according to any one of claims 1 to 4, wherein, The first metal shielding plate, viewed from above, divides the first main surface into a first region and a second region. The second metal shielding plate, viewed from above, divides the first main surface into a third region and a fourth region. The first filter is configured in the first region and the third region. The second filter is configured in the second region. The third filter is configured in the fourth region.

6. The high-frequency module according to any one of claims 1 to 4, wherein, The frequency of the m-th harmonic of the signal in the first communication frequency band is included in the second communication frequency band, where m is an integer greater than or equal to 2. The frequency of the nth harmonic of the signal in the first communication band is included in the third communication band, where n is an integer greater than or equal to 2.

7. The high-frequency module according to any one of claims 1 to 4, wherein, The first metal shielding plate and the second metal shielding plate are the same metal shielding plate.

8. A high-frequency module, comprising: The module substrate has a first main surface; A first power amplifier is disposed on the first main surface; A second low-noise amplifier is disposed on the first main surface; A third low-noise amplifier is disposed on the first main surface; The first filter allows the transmitted signal of the first communication frequency band to pass through; The fourth filter allows the received signal of the second communication band, whose communication frequency is higher than that of the first communication band, to pass through; The fifth filter allows the received signal of the third communication band, whose communication frequency is higher than that of the first communication band, to pass through; A first inductor is disposed on the first main surface and connected between the first power amplifier and the first filter; The fourth inductor is disposed on the first main surface and connected between the second low-noise amplifier and the fourth filter; The fifth inductor is disposed on the first main surface and connected between the third low-noise amplifier and the fifth filter; A resin component covering at least a portion of the first main surface; A metal shielding layer, covering the surface of the resin component, is set to ground potential; A first metal shielding plate is disposed on the first main surface and, when viewed from above, is disposed between the first inductor and the fourth inductor; and A second metal shielding plate is disposed on the first main surface and, when viewed from above, between the first inductor and the fifth inductor. The first metal shielding plate is connected to the first grounding electrode on the first main surface and the metal shielding layer. The second metal shielding plate is connected to the second grounding electrode of the first main surface and the metal shielding layer. The first and second metal shielding plates are not positioned between the fourth and fifth inductors when viewed from above the module substrate.

9. The high-frequency module according to claim 8, wherein, The module substrate also has a second main surface facing the first main surface. The high-frequency module also has multiple external connection terminals configured on the second main surface. The second low-noise amplifier and the third low-noise amplifier are disposed on the second main surface.

10. The high-frequency module according to claim 8 or 9, wherein, The first metal shielding plate, viewed from above, divides the first main surface into a first region and a second region. The second metal shielding plate, viewed from above, divides the first main surface into a third region and a fourth region. The first filter is configured in the first region and the third region. The fourth filter is configured in the second region. The fifth filter is configured in the fourth region.

11. The high-frequency module according to claim 8 or 9, wherein, The frequency of the m-th harmonic of the signal in the first communication frequency band is included in the second communication frequency band, where m is an integer greater than or equal to 2. The frequency of the nth harmonic of the signal in the first communication band is included in the third communication band, where n is an integer greater than or equal to 2.

12. The high-frequency module according to claim 8 or 9, wherein, The first metal shielding plate and the second metal shielding plate are the same metal shielding plate.

13. A communication device comprising: RF signal processing circuitry processes high-frequency signals transmitted and received by the antenna; and The high-frequency module according to any one of claims 1 to 12 propagates the high-frequency signal between the antenna and the RF signal processing circuit.

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