High frequency module and communication device

Abstract

In the high-frequency module (100) of the present invention, the hybrid filter includes an elastic wave filter (10) having at least one elastic wave resonator, an inductor (L11) having a winding portion (413), and a capacitor. The elastic wave filter has a plurality of external electrodes including a first input / output electrode (15) connected to a first signal terminal, a second input / output electrode (16) connected to a second signal terminal, and a ground electrode (17) connected to a ground terminal. The inductor (L11) is arranged on a first main surface (41) of a mounting substrate (4) and is adjacent to the elastic wave filter (10) when viewed from above in the thickness direction of the mounting substrate. When viewed from the direction of the winding axis (A4) of the winding portion (413) of the inductor, the inner portion (416) of the winding portion of the inductor does not overlap with any of the first input / output electrode, the second input / output electrode, and the ground electrode.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including an inductor and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a high-frequency filter (high-frequency module) using a hybrid filter. The high-frequency filter includes a substrate (mounting substrate), an elastic wave resonator, an inductor, and a capacitor. The elastic wave resonator and inductor are mounted on the principal surface (first principal surface) of the substrate.

[0003] Patent Document 1: WO2019 / 064990

[0004] In a high-frequency module in which an elastic wave filter and an inductor are arranged on the first principal surface of a mounting substrate, the characteristics of the high-frequency module may be degraded due to the influence of a magnetic field generated in the inductor. Summary of the Invention

[0005] An object of the present invention is to provide a high-frequency module and a communication device capable of suppressing degradation of the characteristics of the high-frequency module.

[0006] A high-frequency module according to one embodiment of the present invention includes a mounting substrate, a first signal terminal, a second signal terminal, a ground terminal, and a hybrid filter. The mounting substrate has a first principal surface and a second principal surface that oppose each other. The first signal terminal, the second signal terminal, and the ground terminal are arranged on the second principal surface of the mounting substrate. The hybrid filter is connected between the first and second signal terminals. The hybrid filter includes an elastic wave filter having at least one elastic wave resonator, an inductor having a winding portion, and a capacitor. The elastic wave filter has a plurality of external electrodes connected to the first principal surface of the mounting substrate. The plurality of external electrodes include a first input / output electrode connected to the first signal terminal; a second input / output electrode connected to the second signal terminal; and a ground electrode connected to the ground terminal. The inductor is arranged on the first principal surface of the mounting substrate and is adjacent to the elastic wave filter when viewed from above in the thickness direction of the mounting substrate. When viewed in the direction of the winding axis of the winding portion of the inductor, an inner portion of the winding portion of the inductor does not overlap with any of the first input / output electrode, the second input / output electrode, and the ground electrode.

[0007] A communication device according to one embodiment of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module.

[0008] The high-frequency module and the communication device according to the above-described aspect of the present invention can suppress degradation of the characteristics of the high-frequency module. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a circuit diagram of the high-frequency module according to the first embodiment.

[0010] Figure 2 1 is a top view of the high-frequency module.

[0011] Figure 3 This is a bottom view of the high-frequency module.

[0012] Figure 4 The high-frequency module is shown in a perspective view, with the inside of the mounting substrate seen through.

[0013] Figure 5 The high-frequency module is shown in a perspective view, with the interior of each inductor seen through.

[0014] Figure 6 The high-frequency module is shown in a perspective view showing the inside of one inductor adjacent to the elastic wave filter.

[0015] Figure 7 A represents the high frequency module mentioned above, which is Figure 2 X1-X1 line cross-sectional view. Figure 7 B represents the high frequency module mentioned above, which is Figure 2 X2-X2 line cross-sectional view.

[0016] Figure 8 A Regarding the electronic components in the high frequency module mentioned above, Figure 2 The sectional view corresponding to the Y1-Y1 line section. Figure 8 B Regarding the electronic components in the above-mentioned high-frequency module, Figure 2 The sectional view corresponding to the Y2-Y2 line section. Figure 8 C Regarding the electronic components in the above-mentioned high-frequency module, Figure 2 The sectional view corresponding to the Y3-Y3 line section.

[0017] Figure 9 This is a front view of the second inductor in the high-frequency module described above.

[0018] Figure 10 This is a circuit diagram of a communication device including the above-mentioned high-frequency module.

[0019] Figure 11 This is a perspective view of a high-frequency module according to a modified example of the first embodiment.

[0020] Figure 12Graphs showing frequency characteristics of attenuation of the second filter in the high-frequency module according to Modification 1 of Embodiment 1 and the high-frequency module according to Modification 2 of Embodiment 1, respectively.

[0021] Figure 13 Graphs showing frequency characteristics of attenuation of the second filter in the high-frequency module according to the first embodiment and the high-frequency module according to the second modification of the first embodiment.

[0022] Figure 14 This is a plan view of a high-frequency module according to the second embodiment.

[0023] Figure 15 This is a frequency characteristic diagram of the attenuation of the hybrid filter in the high-frequency module described above.

[0024] Figure 16 This is a plan view of the main part of the high-frequency module according to the third embodiment.

[0025] Figure 17 This is a plan view of the main part of the high-frequency module according to the fourth embodiment.

[0026] Figure 18 A high-frequency module according to a fifth embodiment is shown in a perspective view showing the inside of a mounting substrate.

[0027] Figure 19 This is a frequency characteristic diagram of the attenuation of the second filter in the high-frequency module described above. DETAILED DESCRIPTION

[0028] Each of the drawings referred to in the following embodiments and the like is a schematic diagram, and the sizes and thickness ratios of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0029] (Implementation Method 1)

[0030] Below, refer to Figures 1 to 10 The high-frequency module 100 and the communication device 300 according to the first embodiment will be described.

[0031] (1) Summary

[0032] like Figure 1 As shown, the high-frequency module 100 of the first embodiment includes a first signal terminal 101, a second signal terminal 102, and a ground terminal 107 (see Figure 3), and a hybrid filter 1. The hybrid filter 1 is connected between the first signal terminal 101 and the second signal terminal 102. "The hybrid filter 1 is connected between the first signal terminal 101 and the second signal terminal 102" means that the hybrid filter 1 is connected to both the first signal terminal 101 and the second signal terminal 102. The hybrid filter 1 includes an elastic wave filter 10, an inductor 40, and a capacitor 30. In the high-frequency module 100, the hybrid filter 1 includes a plurality of inductors L11, L12, and L13 and a plurality of capacitors C11, C12, C13, and C14. The inductor L11 constitutes the inductor 40, and the capacitor C11 constitutes the capacitor 30. The elastic wave filter 10 (hereinafter also referred to as the first elastic wave filter 10) includes at least one (for example, three) elastic wave resonators 14. The hybrid filter 1 comprises a wideband bandpass filter using the plurality of inductors L12 and L13 and the plurality of capacitors C12 and C14 constituting the hybrid filter 1. Hybrid filter 1 uses elastic wave filter 10 to attenuate a specific frequency band within the passband of the bandpass filter. High-frequency module 100 uses a chip inductor as inductor 40 to increase its Q (Quality Factor).

[0033] In addition, if Figures 2 to 6 As shown, the high frequency module 100 includes a mounting substrate 4. Figure 6 、 Figure 7 A and Figure 7 As shown in FIG. 1B , the mounting substrate 4 has a first main surface 41 and a second main surface 42 facing each other. Here, the term “facing” refers to geometrical facing, not physical facing. Figure 3 As shown, the first signal terminal 101, the second signal terminal 102 and the ground terminal 107 are arranged on the second main surface 42 of the mounting substrate 4. Figure 2 As shown, the elastic wave filter 10 is mounted on the first main surface 41 of the mounting substrate 4. A plurality of inductors L11, L12, L13 and a plurality of capacitors C11, C12, C13, C14 (see Figure 1 ) is configured on the mounting substrate 4. Figure 7 A and Figure 7As shown in FIG. B, the high-frequency module 100 further includes a resin layer 5 and a metal electrode layer 6, and the resin layer 5 is arranged on the first main surface 41 of the mounting substrate 4. The resin layer 5 covers at least a portion of the elastic wave filter 10 and the inductor L11. The metal electrode layer 6 covers at least a portion of the resin layer 5 and at least a portion of the outer peripheral surface 43 of the mounting substrate 4. Although omitted from the figure, the metal electrode layer 6 is connected to at least one ground terminal 107. The plurality of inductors L11, L12, and L13 are chip inductors arranged on the first main surface 41 of the mounting substrate 4. The plurality of capacitors C11, C12, C13, and C14 are built into the mounting substrate 4. In addition, Figures 2 to 6 In the figure, the resin layer 5 and the metal electrode layer 6 are omitted.

[0034] In addition, if Figure 1 As shown, the high-frequency module 100 of Embodiment 1 further includes a third signal terminal 103 and a second filter 2, which is different from the first filter 1 of the hybrid filter 1. The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103. The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103. "The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103" means that the second filter 2 is connected to both the first signal terminal 101 and the third signal terminal 103. The second filter 2 includes a second elastic wave filter 20, which is different from the first elastic wave filter 10, which is the elastic wave filter 10. The second elastic wave filter 20 is connected between the first signal terminal 101 and the third signal terminal 103. Furthermore, the second filter 2 includes an inductor L20.

[0035] like Figure 2 As shown, the second elastic wave filter 20 is mounted on the first main surface 41 of the mounting substrate 4. Figure 3 As shown, the third signal terminal 103 is arranged on the second main surface 42 of the mounting substrate 4. Figure 1 ) is the inductance component of the wiring connecting the two ground electrodes 27 and 28 of the second elastic wave filter 20 and the ground terminal 107 of the mounting substrate 4 .

[0036] like Figure 1As shown, the high-frequency module 100 further includes a fourth signal terminal 104 and a third filter 3. The third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104. The phrase "the third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104" means that the third filter 3 is connected to both the first signal terminal 101 and the fourth signal terminal 104. The third filter 3 includes a plurality (e.g., three) of inductors L31, L32, and L33 and a plurality (e.g., three) of capacitors C31, C32, and C33.

[0037] like Figure 2 and Figure 3 As shown in FIG. 1 , in the high frequency module 100, two of the three inductors L31, L32, and L33 are mounted on the first main surface 41 of the mounting substrate 4, and the remaining inductor L33 is an inner layer inductor arranged in the mounting substrate 4 (see FIG. 1 ). Figure 4 Fourth signal terminal 104 is disposed on second principal surface 42 of mounting substrate 4. In high-frequency module 100, one capacitor C32 of three capacitors C31, C32, and C33 is mounted on first principal surface 41 of mounting substrate 4, while the remaining two capacitors C31 and C33 are built into mounting substrate 4. In high-frequency module 100, inductor L31 constitutes a second inductor 50 separate from first inductor 40, which serves as inductor 40, and capacitor C32 constitutes a second capacitor 60 separate from first capacitor 30, which serves as capacitor 30.

[0038] The high frequency module 100 constitutes a multiplexer 110 (see Figure 10 ), the multiplexer 110 has a first filter 1 (hybrid filter 1), a second filter 2 and a third filter 3.

[0039] Regarding the high frequency module 100 of the first embodiment, based on Figure 10 After describing the circuit configurations of the high-frequency circuit 200 and the communication device 300 included in the high-frequency module 100 , they will be described in more detail.

[0040] (2) High-frequency circuit and communication device equipped with a high-frequency module

[0041] (2.1) Circuit Structure of High-Frequency Circuit and Communication Device Equipped with High-Frequency Module

[0042] The high-frequency circuit 200 including the high-frequency module 100 is used in, for example, a communication device 300. The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited thereto and may also be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency circuit 200 is, for example, a module that can support the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like. An example of the 4G standard is the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. An example of the 5G standard is 5G NR (New Radio). The high-frequency circuit 200 is, for example, a front-end circuit that can support carrier aggregation and dual connectivity.

[0043] High-frequency circuit 200 is configured, for example, to amplify a transmission signal input from signal processing circuit 301 and output it to antenna 309. Furthermore, high-frequency circuit 200 is configured to amplify a reception signal input from antenna 309 and output it to signal processing circuit 301. Signal processing circuit 301 is not a component of high-frequency circuit 200, but rather a component of communication device 300 that includes high-frequency circuit 200. High-frequency circuit 200 is controlled, for example, by signal processing circuit 301 included in communication device 300. Communication device 300 includes high-frequency circuit 200 and signal processing circuit 301. Communication device 300 also includes antenna 309. Communication device 300 also includes a circuit substrate on which high-frequency module 100 is mounted. The circuit substrate is, for example, a printed wiring board. The circuit substrate has a ground electrode that is assigned a ground potential.

[0044] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals. The RF signal processing circuit 302 performs processing such as up-conversion on the signal (transmit signal) output from the baseband signal processing circuit 303 and outputs the processed high-frequency signal. Furthermore, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high-frequency signal (received signal) output from the high-frequency circuit 200 and outputs the processed signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal based on the baseband signal. The baseband signal may be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 303 combines the I-phase and Q-phase signals to perform IQ modulation processing and output the transmit signal. In this case, the transmit signal is generated as a modulated signal (IQ signal) obtained by amplitude modulating a carrier signal of a predetermined frequency with a period longer than the period of the carrier signal. The received signal processed by baseband signal processing circuit 303 is used, for example, as an image signal for image display or as an audio signal for a user of communication device 300 to communicate. High-frequency circuit 200 transmits high-frequency signals (received signals, transmit signals) between antenna 309 and RF signal processing circuit 302 of signal processing circuit 301.

[0045] The high-frequency circuit 200 includes a multiplexer 110, a plurality of (e.g., three) transmit filters (a first transmit filter 111, a second transmit filter 112, and a third transmit filter 113), and a plurality of (e.g., three) receive filters (a first receive filter 121, a second receive filter 122, and a third receive filter 123). Furthermore, the high-frequency circuit 200 includes a first switch 7, a second switch 8, and a third switch 9. Furthermore, the high-frequency circuit 200 includes a plurality of (e.g., three) power amplifiers (a first power amplifier 171, a second power amplifier 172, and a third power amplifier 173), and a plurality of (e.g., three) low-noise amplifiers (a first low-noise amplifier 161, a second low-noise amplifier 162, and a third low-noise amplifier 163). In addition, the high-frequency circuit 200 includes multiple (for example, three) output matching circuits (first output matching circuit 131, second output matching circuit 132, third output matching circuit 133) and multiple (for example, three) input matching circuits (first input matching circuit 141, second input matching circuit 142, third input matching circuit 143).

[0046] The high-frequency circuit 200 also includes multiple external connection terminals. These include an antenna terminal T0, a first signal input terminal T11, a second signal input terminal T12, a third signal input terminal T13, a first signal output terminal T21, a second signal output terminal T22, a third signal output terminal T23, and multiple external ground terminals. These multiple external ground terminals are terminals that are electrically connected to the ground electrode of the circuit substrate included in the communication device 300 and are thus provided with a ground potential.

[0047] Hereinafter, the circuit configuration of the high-frequency circuit 200 will be described in more detail.

[0048] The multiplexer 110 includes a first filter 1 (hybrid filter 1), a second filter 2, a third filter 3, a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, and a fourth signal terminal 104 (see Figure 1 The first signal terminal 101 is a common terminal connected to the first filter 1, the second filter 2, and the third filter 3. It is connected to the second signal terminal 102 via the first filter 1, to the third signal terminal 103 via the second filter 2, and to the fourth signal terminal 104 via the third filter 3. The first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 are input and output terminals for inputting and outputting high-frequency signals, respectively. In the high-frequency circuit 200, the first signal terminal 101 of the multiplexer 110 is connected to the antenna terminal T0. The antenna terminal T0 is connected to the antenna 309.

[0049] The first transmit filter 111 has a passband that includes the transmit band of the first communication frequency band. The second transmit filter 112 has a passband that includes the transmit band of the second communication frequency band. The third transmit filter 113 has a passband that includes the transmit band of the third communication frequency band. In the multiplexer 110, the first transmit filter 111 is a filter for the mid-to-high frequency band. The passband of the first transmit filter 111 includes, for example, the frequency bands of 1610 MHz to 2370 MHz and 2496 MHz to 2690 MHz. The second transmit filter 112 is, for example, a filter for Wi-Fi (registered trademark) in the 2.4 GHz band. The transmit band of the second communication frequency band includes, for example, 2400 MHz to 2483 MHz. The third transmit filter 113 is a filter for ultra-high frequency bands. The passband of the third transmit filter 113 includes, for example, the frequency band of 3300 MHz to 5000 MHz. The first communication frequency band is, for example, Band 41 of the 3GPP LTE standard or Band 41 of the 5G NR standard. The third communication frequency band is, for example, n79 of the 5G NR standard. The first transmit filter 111 can be connected to the first filter 1 of the multiplexer 110 via the first switch 7. The second transmit filter 112 can be connected to the second filter 2 of the multiplexer 110 via the second switch 8. The third transmit filter 113 can be connected to the third filter 3 of the multiplexer 110 via the third switch 9.

[0050] The first receive filter 121 has a passband that includes a receive band of a fourth communication frequency band. The fourth communication frequency band is, for example, the same as the first communication frequency band. The second receive filter 122 has a passband that includes a receive band of a fifth communication frequency band. The fifth communication frequency band is, for example, the same as the second communication frequency band. The third receive filter 123 has a passband that includes a receive band of a sixth communication frequency band. The sixth communication frequency band is, for example, the same as the third communication frequency band. The first receive filter 121 can be connected to the first filter 1 of the multiplexer 110 via the first switch 7. The second receive filter 122 can be connected to the second filter 2 of the multiplexer 110 via the second switch 8. The third receive filter 123 can be connected to the third filter 3 of the multiplexer 110 via the third switch 9.

[0051] The first switch 7 has a common terminal 70 and a plurality of (for example, two) selection terminals 71 and 72. In the first switch 7, the common terminal 70 is connected to the first filter 1 of the multiplexer 110. More specifically, the common terminal 70 is connected to the second signal terminal 102 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1) is connected to the first filter 1 via the second signal terminal 102. In addition, in the first switch 7, the selection terminal 71 is connected to the first transmit filter 111, and the selection terminal 72 is connected to the first receive filter 121. The first switch 7 is controlled by the signal processing circuit 301, for example. In this case, the first switch 7 switches the connection state between the common terminal 70 and the multiple selection terminals 71 and 72 according to the control signal of the RF signal processing circuit 302 from the signal processing circuit 301. The first switch 7 is, for example, a switch IC (Integrated Circuit). The first switch 7 is, for example, a switch that can connect at least one terminal of the multiple selection terminals 71 and 72 to the common terminal 70. Here, the first switch 7 is, for example, a switch that can perform one-to-one and one-to-many connections.

[0052] The second switch 8 has a common terminal 80 and a plurality of (for example, two) selection terminals 81 and 82. In the second switch 8, the common terminal 80 is connected to the second filter 2 of the multiplexer 110. More specifically, the common terminal 80 is connected to the third signal terminal 103 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1 ) is connected to the second filter 2 via the third signal terminal 103. In addition, in the second switch 8, the selection terminal 81 is connected to the second transmit filter 112, and the selection terminal 82 is connected to the second receive filter 122. The second switch 8 is controlled by the signal processing circuit 301, for example. In this case, the second switch 8 switches the connection state between the common terminal 80 and the multiple selection terminals 81 and 82 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 8 is, for example, a switch IC. The second switch 8 is, for example, a switch capable of connecting at least one of the multiple selection terminals 81 and 82 to the common terminal 80. Here, the second switch 8 is, for example, a switch capable of performing one-to-one and one-to-many connections.

[0053] The third switch 9 has a common terminal 90 and a plurality of (for example, two) selection terminals 91 and 92. In the third switch 9, the common terminal 90 is connected to the third filter 3 of the multiplexer 110. More specifically, the common terminal 90 is connected to the fourth signal terminal 104 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1) is connected to the third filter 3 via the fourth signal terminal 104. In addition, in the third switch 9, the selection terminal 91 is connected to the third transmit filter 113, and the selection terminal 92 is connected to the third receive filter 123. The third switch 9 is controlled by the signal processing circuit 301, for example. In this case, the third switch 9 switches the connection state between the common terminal 90 and the multiple selection terminals 91 and 92 based on the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 9 is, for example, a switch IC. The third switch 9 is, for example, a switch capable of connecting at least one of the multiple selection terminals 91 and 92 to the common terminal 90. Here, the third switch 9 is, for example, a switch capable of one-to-one and one-to-many connections.

[0054] The first power amplifier 171 has an input terminal and an output terminal. The first power amplifier 171 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the first power amplifier 171 is connected to the first signal input terminal T11. The input terminal of the first power amplifier 171 is connected to the signal processing circuit 301 via the first signal input terminal T11. The output terminal of the first power amplifier 171 is connected to the first transmit filter 111 via the first output matching circuit 131. The first power amplifier 171 is a power amplifier capable of amplifying high-frequency signals within the passband of the first transmit filter 111. The first output matching circuit 131 is a circuit for achieving impedance matching between the first power amplifier 171 and the first transmit filter 111, and includes, for example, multiple inductors and multiple capacitors.

[0055] The second power amplifier 172 has an input terminal and an output terminal. The second power amplifier 172 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the second power amplifier 172 is connected to the second signal input terminal T12. The input terminal of the second power amplifier 172 is connected to the signal processing circuit 301 via the second signal input terminal T12. The output terminal of the second power amplifier 172 is connected to the second transmit filter 112 via the second output matching circuit 132. The second power amplifier 172 is a power amplifier capable of amplifying high-frequency signals within the passband of the second transmit filter 112. The second output matching circuit 132 is a circuit for impedance matching between the second power amplifier 172 and the second transmit filter 112, and includes, for example, multiple inductors and multiple capacitors.

[0056] The third power amplifier 173 has an input terminal and an output terminal. The third power amplifier 173 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the third power amplifier 173 is connected to the third signal input terminal T13. The input terminal of the third power amplifier 173 is connected to the signal processing circuit 301 via the third signal input terminal T13. The output terminal of the third power amplifier 173 is connected to the third transmit filter 113 via the third output matching circuit 133. The third power amplifier 173 is a power amplifier capable of amplifying high-frequency signals within the passband of the third transmit filter 113. The third output matching circuit 133 is a circuit for achieving impedance matching between the third power amplifier 173 and the third transmit filter 113, and includes, for example, multiple inductors and multiple capacitors.

[0057] The high-frequency circuit 200 may further include a controller that controls the first power amplifier 171 , the second power amplifier 172 , and the third power amplifier 173 based on a control signal from the signal processing circuit 301 , for example.

[0058] The first low-noise amplifier 161 has an input terminal and an output terminal. The first low-noise amplifier 161 amplifies the received signal input to the input terminal of the first low-noise amplifier 161 and outputs the signal from the output terminal of the first low-noise amplifier 161. The input terminal of the first low-noise amplifier 161 is connected to the first receive filter 121 via the first input matching circuit 141. The first input matching circuit 141 is a circuit for achieving impedance matching between the first low-noise amplifier 161 and the first receive filter 121. The first input matching circuit 141 includes, for example, an inductor. The output terminal of the first low-noise amplifier 161 is connected to the first signal output terminal T21. The output terminal of the first low-noise amplifier 161 is connected to the signal processing circuit 301, for example, via the first signal output terminal T21.

[0059] The second low-noise amplifier 162 has an input terminal and an output terminal. The second low-noise amplifier 162 amplifies the received signal input to the input terminal of the second low-noise amplifier 162 and outputs the signal from the output terminal of the second low-noise amplifier 162. The input terminal of the second low-noise amplifier 162 is connected to the second receive filter 122 via the second input matching circuit 142. The second input matching circuit 142 is a circuit for achieving impedance matching between the second low-noise amplifier 162 and the second receive filter 122. The second input matching circuit 142 includes, for example, an inductor. The output terminal of the second low-noise amplifier 162 is connected to the signal processing circuit 301 via, for example, the second signal output terminal T22.

[0060] The third low-noise amplifier 163 has an input terminal and an output terminal. The third low-noise amplifier 163 amplifies the received signal input to the input terminal of the third low-noise amplifier 163 and outputs the signal from the output terminal of the third low-noise amplifier 163. The input terminal of the third low-noise amplifier 163 is connected to the third receive filter 123 via the third input matching circuit 143. The third input matching circuit 143 is a circuit for achieving impedance matching between the third low-noise amplifier 163 and the third receive filter 123. The third input matching circuit 143 includes, for example, an inductor. The output terminal of the third low-noise amplifier 163 is connected to the signal processing circuit 301 via, for example, the third signal output terminal T23.

[0061] (2.2) Circuit structure of high-frequency module

[0062] like Figure 1 As shown, the high-frequency module 100 includes a first signal terminal 101 , a second signal terminal 102 , a third signal terminal 103 , a fourth signal terminal 104 , a hybrid filter 1 (first filter 1 ), a second filter 2 , and a third filter 3 .

[0063] Hybrid filter 1 further includes a first elastic wave filter 10, a plurality of (e.g., three) inductors L11, L12, and L13, and a plurality of (e.g., four) capacitors C11, C12, C13, and C14. First elastic wave filter 10 includes at least one (e.g., three) elastic wave resonator 14. First elastic wave filter 10 is, for example, a surface elastic wave filter utilizing surface acoustic waves. In this case, each of elastic wave resonators 14 is a SAW (Surface Acoustic Wave) resonator.

[0064] First elastic wave filter 10 is, for example, a π-type filter. It includes three elastic wave resonators 14, a first input / output electrode 15 connected to a first signal terminal 101, a second input / output electrode 16 connected to a second signal terminal 102, and two ground electrodes 17 and 18. Three elastic wave resonators 14 include one series-arm resonator S11 and two parallel-arm resonators P11 and P12.

[0065] The series arm resonator S11 is provided on a path 150 (hereinafter also referred to as a series arm path 150 ) between the first input / output electrode 15 and the second input / output electrode 16 . The series arm resonator S11 is connected between the first signal terminal 101 and the second signal terminal 102 .

[0066] The parallel arm resonator P11 is provided on a path 151 (parallel arm path 151) located between the path between the first input / output electrode 15 and the series arm resonator S11 on the series arm path 150 and the ground electrode 17. The parallel arm resonator P12 is provided on a path 152 (parallel arm path 152) located between the path between the series arm resonator S11 and the second input / output electrode 16 on the series arm path 150 and the ground electrode 18.

[0067] The inductor L11 is connected between the first signal terminal 101 and the first elastic wave filter 10. Here, the inductor L11 is connected in series with the first elastic wave filter 10. More specifically, in the inductor L11, one end ( Figure 7 A and 7B) is connected to the first signal terminal 101, and the other end of the inductor L11 ( Figure 7 The second external terminal 412 (shown in FIG7A and FIG7B ) is connected to the first input-output electrode 15 of the first elastic wave filter 10 . Thus, the inductor L11 is connected in series with the series arm resonator S11 of the first elastic wave filter 10 .

[0068] Capacitor C11 is connected in parallel with inductor L11. The parallel circuit of capacitor C11u and inductor L11 also functions as a phase shift circuit.

[0069] Inductor L12 is connected between the first elastic wave filter 10 and the second signal terminal 102. Here, inductor L12 is connected in series with the first elastic wave filter 10. More specifically, one end of inductor L12 is connected to the second input / output electrode 16 of the first elastic wave filter 10, and the other end is connected to the second signal terminal 102. Thus, inductor L12 is connected in series with the series arm resonator S11 of the first elastic wave filter 10. Inductor L12 is the inductor closest to the second signal terminal 102 in the signal path between the first signal terminal 101 and the second signal terminal 102.

[0070] Inductor L13 has one end connected to the path between inductor L12 and second signal terminal 102, and the other end connected to the ground (ground terminal 107) of high-frequency module 100. In hybrid filter 1, the LC circuit connected between first elastic wave filter 10 and second signal terminal 102 defines the passband of hybrid filter 1. The LC circuit includes inductor L12, inductor L13, capacitors C12, C13, and C14.

[0071] Capacitor C12 is connected between a path between second input / output electrode 16 of first elastic wave filter 10 and inductor L12 and ground terminal 107 .

[0072] The capacitor C13 is connected between the inductor L12 and the second signal terminal 102. The capacitor C13 and the inductor L12 are connected in series.

[0073] The capacitor C14 is connected in series with the inductor L13 . More specifically, the capacitor C14 is connected between the inductor L13 and the ground terminal 107 of the high-frequency module 100 .

[0074] Second filter 2 is connected between first signal terminal 101 and third signal terminal 103. Second filter 2 includes a second elastic wave filter 20 and an inductor L20. Second elastic wave filter 20 includes at least one (e.g., ten) elastic wave resonators 24. Second elastic wave filter 20 is, for example, a surface elastic wave filter utilizing surface acoustic waves. In this case, each of the plurality of elastic wave resonators 24 is a SAW resonator.

[0075] Second elastic wave filter 20 is, for example, a ladder-type filter. It includes ten elastic wave resonators 24, a first input / output electrode 25 connected to first signal terminal 101, a second input / output electrode 26 connected to third signal terminal 103, and two ground electrodes 27 and 28. The ten elastic wave resonators 24 include five series-arm resonators S21, S22, S23, S24, and S25, and five parallel-arm resonators P21, P22, P23, P24, and P25.

[0076] Five series-arm resonators S21, S22, S23, S24, and S25 are provided on a path 250 (hereinafter referred to as a series-arm path 250) between the first input / output electrode 25 and the second input / output electrode 26. The five series-arm resonators S21, S22, S23, S24, and S25 are connected in series on the series-arm path 250. In the second elastic wave filter 20, the five series-arm resonators S21, S22, S23, S24, and S25 are arranged on the series-arm path 250 in the order of the series-arm resonator S21, the series-arm resonator S22, the series-arm resonator S23, the series-arm resonator S24, and the series-arm resonator S25, from the first input / output electrode 25 side.

[0077] The parallel arm resonator P21 is provided on a path 251 (parallel arm path 251) located between the path between the first input / output electrode 25 and the series arm resonator S21 on the series arm path 250 and the ground electrode 27. The parallel arm resonator P22 is provided on a path 252 (parallel arm path 252) located between the path between the series arm resonators S21 and S22 on the series arm path 250 and the ground electrode 27. The parallel arm resonator P23 is provided on a path 253 (parallel arm path 253) located between the path between the series arm resonators S22 and S23 on the series arm path 250 and the ground electrode 27. The parallel arm resonator P24 is provided on a path 254 (parallel arm path 254) located between the path between the series arm resonators S23 and S24 on the series arm path 250 and the ground electrode 28. The parallel arm resonator P25 is provided on a path 255 (parallel arm path 255) located between the path between the series arm resonator S25 and the second input / output electrode 26 on the series arm path 250 and the ground electrode 28.

[0078] Inductor L20 is the inductance component of the wiring connecting two ground electrodes 27 and 28 of second elastic wave filter 20 and ground terminal 107 .

[0079] The high-frequency module 100 further includes a capacitor C22 . The capacitor C22 is a capacitance component of a wiring connecting the path between the second elastic wave filter 20 and the third signal terminal 103 and the ground terminal 107 .

[0080] The high-frequency module 100 also includes an inductor L1, an inductor L2, an inductor L3, and a capacitor C2. The inductor L1 is connected between the first filter 1 and the second filter 2 and the first signal terminal 101. For example, the inductor L1 functions to achieve impedance matching between the first filter 1 and the second filter 2 and the first signal terminal 101. The series circuit of the inductor L2 and the capacitor C2 is connected between the common path Ru0 of the first path Ru1 between the first filter 1 and the first signal terminal 101 and the second path Ru2 between the second filter 2 and the first signal terminal 101, and ground. More specifically, the series circuit of the inductor L2 and the capacitor C2 is connected between the path between the connection point of the first filter 1 and the second filter 2 and the inductor L1 and ground. The series circuit of the inductor L2 and the capacitor C2 attenuates the higher harmonics in the passband of the first filter 1 and the second filter 2. Furthermore, the inductor L3 is connected between the common path Ru0 and ground. More specifically, inductor L3 is connected in parallel with the series circuit of inductor L2 and capacitor C2. Inductor L3 is an ESD (electrostatic discharge) countermeasure. Furthermore, the circuit as a whole, consisting of inductors L1, L2, L3, and capacitor C3, functions as an impedance matching circuit between the first and second paths Ru1 and Ru2 and the first signal terminal 101.

[0081] Furthermore, the high-frequency module 100 further includes a capacitor C21 connected between the first signal terminal 101 and the second filter 2 .

[0082] The third filter 3 is an LC filter and includes a plurality of (for example, three) inductors L31 , L32 , and L33 and a plurality of (for example, three) capacitors C31 , C32 , and C33 .

[0083] In the third filter 3, a series circuit comprising a capacitor C31, a capacitor C33, and an inductor L32 is connected between the first signal terminal 101 and the fourth signal terminal 104. In the capacitor C31, one end is connected to the first signal terminal 101, and the other end is connected to one end of the capacitor C33. In the capacitor C33, the other end is connected to one end of the inductor L32. In the inductor L32, the other end is connected to the fourth signal terminal 104.

[0084] In the third filter 3, a series circuit of capacitor C32 and inductor L31 is connected between the path between capacitors C31 and C33 and ground terminal 107 of high-frequency module 100. In this case, one end of capacitor C32 is connected to the path between capacitors C31 and C33, and the other end of capacitor C32 is connected to one end of inductor L31. In inductor L31, the other end of inductor L31 is connected to ground terminal 107 of high-frequency module 100.

[0085] (2.3) Structure of high-frequency module

[0086] The following is based on Figures 2 to 10 The structure of the high-frequency module 100 will be described.

[0087] like Figure 2 As shown in FIG3 , the high-frequency module 100 includes a mounting substrate 4, a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, a fourth signal terminal 104, and a plurality of ground terminals 107. Furthermore, the high-frequency module 100 includes a first elastic wave filter 10, an inductor L11, and a capacitor C11. Furthermore, the high-frequency module 100 includes a plurality (e.g., two) of inductors L12 and L13 and a plurality (e.g., three) of capacitors C12, C13, and C14. Furthermore, the high-frequency module 100 includes a second elastic wave filter 20, an inductor L20, a capacitor C21, and a capacitor C22 (see FIG3 ). Figure 1 ). In addition, in this embodiment, the first elastic wave filter 10 and the second elastic wave filter 20 have a structure in which functional elements are formed on the same substrate. In addition, the high-frequency module 100 further includes an inductor L1, an inductor L2, an inductor L3, and a capacitor C2. In addition, the high-frequency module 100 further includes a plurality of (for example, two) inductors L31 and L32 and a plurality of (for example, three) capacitors C31, C32, and C33. In addition, as Figure 7 As shown in FIG7A and FIG7B , the high-frequency module 100 further includes a resin layer 5 and a metal electrode layer 6 .

[0088] The mounting substrate 4 has a first main surface 41 and a second main surface 42 that are opposite to each other in the thickness direction D1 of the mounting substrate 4. The mounting substrate 4 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 4. The plurality of conductive layers are formed into a prescribed pattern specified for each layer. The plurality of conductive layers each include one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 4. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a plurality of first grounding conductor portions 46 and a second grounding conductor portion 47 (see Figure 4). In the high-frequency module 100, the ground terminal 107 is electrically connected to the plurality of first ground conductor portions 46 and the second ground conductor portions 47 via the conductive conductors and the like provided on the mounting substrate 4. The mounting substrate 4 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 4 is not limited to an LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge 431 of the first main surface 41 and the outer edge 432 of the second main surface 42 (see Figure 3 ) is rectangular (e.g., a rectangle). The following description of the high-frequency module 100 may also use a first direction D11 and a second direction D12 that are perpendicular to the thickness direction D1 of the mounting substrate 4. The first direction D11 and the second direction D12 are perpendicular to each other. The first direction D11 is, for example, a direction along the first side (long side) of the outer edge 431 of the first principal surface 41 when viewed from above in the thickness direction D1 of the mounting substrate 4. The second direction D12 is, for example, a direction along the second side (short side) of the outer edge 431 of the first principal surface 41 of the mounting substrate 4 when viewed from above in the thickness direction D1 of the mounting substrate 4.

[0089] In addition, the mounting substrate 4 is not limited to an LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. In the case of multiple insulating layers, the multiple insulating layers are formed into a prescribed pattern prescribed for each layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. In the case of multiple conductive layers, the multiple conductive layers are formed into a prescribed pattern prescribed for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 41 of the mounting substrate 4, and the second surface is the second main surface 42 of the mounting substrate 4. The wiring structure may also be, for example, an interposer. The interposer may also be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.

[0090] The first principal surface 41 and the second principal surface 42 of the mounting substrate 4 are separated in the thickness direction D1 of the mounting substrate 4 and intersect with the thickness direction D1 of the mounting substrate 4. The first principal surface 41 of the mounting substrate 4 is, for example, perpendicular to the thickness direction D1 of the mounting substrate 4, but may also be a surface that is not perpendicular to the thickness direction D1 and include, for example, the side surface of the conductor portion. Furthermore, the second principal surface 42 of the mounting substrate 4 is, for example, perpendicular to the thickness direction D1 of the mounting substrate 4, but may also be a surface that is not perpendicular to the thickness direction D1 and include, for example, the side surface of the conductor portion. Furthermore, the first principal surface 41 and the second principal surface 42 of the mounting substrate 4 may also have microscopic projections and recesses or projections.

[0091] The high-frequency module 100 includes multiple external connection terminals arranged on the second principal surface 42 of the mounting substrate 4. "External connection terminals arranged on the second principal surface 42 of the mounting substrate 4" includes both mechanical connection of the external connection terminals to the second principal surface 42 of the mounting substrate 4 and electrical connection of the external connection terminals to (appropriate conductor portions of) the mounting substrate 4. The multiple external connection terminals include a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, a fourth signal terminal 104, and multiple ground terminals 107. The multiple ground terminals 107 are electrically connected to the multiple first ground conductors 46 and the multiple second ground conductors 47 of the mounting substrate 4. The multiple first ground conductors 46 and the multiple second ground conductors 47 serve as the circuit ground for the high-frequency module 100. When viewed from above in the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the multiple ground terminals 107 are each rectangular. The thickness of the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, the fourth signal terminal 104 and the ground terminals 107 is thinner than the thickness of the mounting substrate 4. The material of the external connection terminals is metal (eg, copper, copper alloy, etc.).

[0092] In the high frequency module 100, as Figure 2As shown, an electronic component E1 including a first elastic wave filter 10 and a second elastic wave filter 20 is mounted on the first principal surface 41 of the mounting substrate 4. "Mounting the electronic component E1 on the first principal surface 41 of the mounting substrate 4" includes both placement of the electronic component E1 on the first principal surface 41 of the mounting substrate 4 (mechanical connection) and electrical connection of the electronic component E1 to (appropriate conductor portions of) the mounting substrate 4. In the high-frequency module 100, the first input / output electrode 15, the second input / output electrode 16, and the two ground electrodes 17 and 18 of the first elastic wave filter 10 are connected to the first principal surface 41 of the mounting substrate 4. Furthermore, in the high-frequency module 100, the first input / output electrode 25, the second input / output electrode 26, and the two ground electrodes 27 and 28 of the second elastic wave filter 20 are connected to the first principal surface 41 of the mounting substrate 4. The first input / output electrode 15, the second input / output electrode 16, and the two ground electrodes 17 and 18 of the first elastic wave filter 10 each include a conductive bump. First input / output electrode 25, second input / output electrode 26, and two ground electrodes 27 and 28 of second elastic wave filter 20 each include a conductive bump. The conductive bump is made of, for example, solder, gold, or copper.

[0093] For example, Figure 8 As shown in Figures A to 8C, electronic component E1 includes a first elastic wave filter 10 and a second elastic wave filter 20. The first elastic wave filter 10 includes a first substrate (substrate 1000). The second elastic wave filter 20 includes a second substrate (substrate 1000). In electronic component E1, the first and second substrates are shared. In other words, in electronic component E1, the first and second substrates are the same substrate 1000. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of substrate 1000 is rectangular. In electronic component E1, the first and second elastic wave filters 10 and 20 are arranged along the longitudinal direction of substrate 1000. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of electronic component E1 is the same rectangular shape as the outer edge of substrate 1000. Substrate 1000 has a first principal surface 1001 and a second principal surface 1002 that face each other in the thickness direction of substrate 1000 (along the thickness direction D1 of the mounting substrate 4). In the following description, “on the substrate 1000 ” means “on the first main surface 1001 of the substrate 1000 ”.

[0094] As described above, the first elastic wave filter 10 includes, for example, a plurality of (three) elastic wave resonators 14 (see Figure 1 ) of the π-type filter.

[0095] The first substrate (substrate 1000) is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The first elastic wave filter 10 includes multiple (for example, three) first IDT (interdigital transducer) electrodes 140 disposed on the first substrate (substrate 1000). The multiple first IDT electrodes 140 are conductive. Examples of materials for the multiple first IDT electrodes 140 include Al (aluminum), Cu (copper), Pt (platinum), Au (gold), Ag (silver), Ti (titanium), Ni (nickel), Cr (chromium), Mo (molybdenum), W (tungsten), Ta (tantalum), Mg (magnesium), Fe (iron), or alloys primarily composed of any of these metals. Alternatively, the multiple first IDT electrodes 140 may have a structure formed by stacking multiple metal films composed of these metals or alloys. For example, the multiple first IDT electrodes 140 may include a stacked film of a first metal film composed of a Ti film formed on the substrate 1000 and a second metal film composed of an Al film formed on the first metal film. The first metal film has a function as a close-fitting film. The material of the first metal film is Ti, but is not limited thereto. For example, it may be Cr or NiCr. In addition, the material of the second metal film is Al, but is not limited thereto. For example, it may also contain Al and Cu. The thickness of the first metal film is thinner than that of the second metal film. In the first elastic wave filter 10, the plurality of first IDT electrodes 140 are respectively components of the SAW resonator. In addition, in the first elastic wave filter 10, the plurality of first wiring portions connecting the plurality of first IDT electrodes 140 are provided on the first substrate (substrate 1000). In the first elastic wave filter 10, the series arm path 150, the parallel arm path 151, and the parallel arm path 152 are formed by the plurality of first wiring portions (refer to Figure 1 In first elastic wave filter 10, multiple elastic wave resonators 14 are connected by connecting multiple first IDT electrodes 140. In first elastic wave filter 10, first input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18 are provided on a first substrate (substrate 1000).

[0096] As described above, the second elastic wave filter 20 includes, for example, a plurality of (ten) elastic wave resonators 24 (see Figure 1 ) ladder filter.

[0097] The second elastic wave filter 20 has a plurality of (e.g., ten) second IDT electrodes 240 provided on a second substrate (substrate 1000). The material of the plurality of second IDT electrodes 240 is the same as that of the plurality of first IDT electrodes 140. In the second elastic wave filter 20, the plurality of second IDT electrodes 240 are components of SAW resonators. In addition, in the second elastic wave filter 20, a plurality of second wiring portions connecting the plurality of second IDT electrodes 240 are provided on the second substrate (substrate 1000). In the second elastic wave filter 20, a series arm path 250 and five parallel arm paths 251 to 255 (see Figure 1 In the second elastic wave filter 20, multiple elastic wave resonators 24 are connected by connecting multiple second IDT electrodes 240. In the second elastic wave filter 20, first input / output electrodes 25, second input / output electrodes 26, and two ground electrodes 27 and 28 are provided on the second substrate (substrate 1000). Each of the first input / output electrodes 25, second input / output electrodes 26, and two ground electrodes 27 and 28 of the second elastic wave filter 20 includes a conductive bump.

[0098] The first elastic wave filter 10 is disposed on the first principal surface 41 of the mounting substrate 4, with the plurality of first IDT electrodes 140 positioned on the mounting substrate 4 side as viewed from the first substrate. Furthermore, the second elastic wave filter 20 is disposed on the first principal surface 41 of the mounting substrate 4, with the plurality of second IDT electrodes 240 positioned on the mounting substrate 4 side as viewed from the second substrate.

[0099] The first elastic wave filter 10 also includes components of a first package. Components of the first package include, for example, a first spacer layer (spacer layer 1006), a first cover member (cover member 1007), and multiple external electrodes, namely, multiple first external electrodes (first input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18). The first spacer layer is provided on the first substrate. When viewed from above in the thickness direction of the first substrate, the first spacer layer includes a portion formed along the outer edge of the first substrate. The first spacer layer is electrically insulating. The material of the first spacer layer is epoxy resin, polyimide, or the like. The first cover member is flat. The first cover member is disposed on the first spacer layer and faces the first substrate in the thickness direction. The first cover member overlaps with the multiple first IDT electrodes 140 in the thickness direction of the first substrate and is separated from the multiple first IDT electrodes 140 in the thickness direction of the first substrate. The first cover member is electrically insulating. The material of the first cover member is epoxy resin, polyimide, or the like. The first input / output electrode 15 , the second input / output electrode 16 , and the two ground electrodes 17 and 18 are exposed from the first cover member.

[0100] The second elastic wave filter 20 also includes components of a second package. The components of the second package include, for example, a second spacer layer (spacer layer 1006), a second cover member (cover member 1007), and a plurality of second external electrodes (first input / output electrode 25, second input / output electrode 26, and two ground electrodes 27 and 28). The second spacer layer is provided on the second substrate. When viewed from above in the thickness direction of the second substrate, the second spacer layer includes a portion formed along the outer edge of the second substrate. The second spacer layer is electrically insulating. The material of the second spacer layer is epoxy resin, polyimide, or the like. The second cover member is flat. The second cover member is disposed on the second spacer layer and faces the second substrate in the thickness direction. The second cover member overlaps with the plurality of second IDT electrodes 240 in the thickness direction of the second substrate and is separated from the plurality of second IDT electrodes 240 in the thickness direction of the second substrate. The second cover member is electrically insulating. The material of the second cover member is epoxy resin, polyimide, or the like. The first input / output electrode 25 , the second input / output electrode 26 , and the two ground electrodes 27 and 28 are exposed from the second cover member.

[0101] In electronic component E1, the first and second spacer layers are shared. In other words, in electronic component E1, the first and second spacer layers are the same spacer layer 1006. Furthermore, in electronic component E1, the first and second cover members are the same cover member 1007.

[0102] The first and second substrates described above are not limited to piezoelectric substrates. For example, they may also be stacked substrates comprising a silicon substrate, a low-acoustic-velocity film disposed on the silicon substrate, and a piezoelectric layer disposed on the low-acoustic-velocity film. The piezoelectric layer may be made of, for example, lithium niobate or lithium tantalate. The low-acoustic-velocity film is a film in which the acoustic velocity of bulk waves propagating through the low-acoustic-velocity film is lower than the acoustic velocity of bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film may be made of, for example, silicon oxide. The material of the low-acoustic-velocity film is not limited to silicon oxide. The material of the low-acoustic-velocity film may also be, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound containing fluorine, carbon, or boron added to silicon oxide, or a material primarily composed of any of the above materials. In a silicon substrate, the acoustic velocity of bulk waves propagating through the silicon substrate is higher than the acoustic velocity of elastic waves propagating through the piezoelectric layer. Here, the bulk wave propagating through the silicon substrate is the one with the lowest acoustic velocity among the multiple bulk waves propagating through the silicon substrate.

[0103] The stacked substrate may also have a high-acoustic-velocity membrane disposed between the silicon substrate and the low-acoustic-velocity membrane. The high-acoustic-velocity membrane is a membrane in which the acoustic velocity of the bulk wave propagating in the high-acoustic-velocity membrane is higher than the acoustic velocity of the elastic wave propagating in the piezoelectric layer. The material of the high-acoustic-velocity membrane is, for example, at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, piezoelectric material (lithium tantalate, lithium niobate, or crystal), aluminum oxide, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond. The material of the high-acoustic-velocity membrane may also be a material having any of the above materials as a main component or a material having a mixture containing any of the above materials as a main component.

[0104] Furthermore, the laminated substrate may include, for example, a contact layer sandwiched between the low-acoustic-velocity film and the piezoelectric layer. The contact layer may be composed, for example, of a resin (epoxy resin, polyimide resin). Furthermore, the laminated substrate may include a dielectric film at any location between the low-acoustic-velocity film and the piezoelectric layer, above the piezoelectric layer, or below the low-acoustic-velocity film.

[0105] In high-frequency module 100, multiple circuit elements are arranged on mounting substrate 4. These multiple circuit elements include multiple first circuit elements mounted on first principal surface 41 of mounting substrate 4 and multiple second circuit elements embedded in mounting substrate 4. In high-frequency module 100, the multiple first circuit elements include the aforementioned electronic component E1, inductors L11, L12, and L13 of hybrid filter 1, inductors L31 and L32 of third filter 3, and capacitor C32. "Mounting the circuit elements on first principal surface 41 of mounting substrate 4" encompasses both placing the circuit elements on first principal surface 41 of mounting substrate 4 (mechanically connecting them) and electrically connecting the circuit elements to (appropriate conductor portions of) mounting substrate 4. Furthermore, in high-frequency module 100, the multiple second circuit elements include capacitors C11, C12, C13, and C14 of hybrid filter 1, capacitor C2, inductor L33 of third filter 3, and capacitors C31 and C33.

[0106] The inductor L11 is, for example, a chip inductor. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of the inductor L11 is rectangular. Furthermore, the two inductors L12 and L13 are, for example, chip inductors. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edges of the two inductors L12 and L13 are rectangular.

[0107] The inductor L31 is, for example, a chip inductor. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of the inductor L31 is rectangular. Furthermore, the inductor L32 is, for example, a chip inductor. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of the inductor L32 is rectangular.

[0108] In the high-frequency module 100 of the first embodiment, as described above, the inductor L11 constitutes the inductor 40 (hereinafter also referred to as the first inductor 40). The first inductor 40 is in the shape of a rectangular parallelepiped. The first inductor 40 includes a rectangular parallelepiped body 400, a first external terminal 411 and a second external terminal 412, a winding portion 413 (hereinafter also referred to as the first winding portion 413), a first wiring portion 414, and a second wiring portion 415. The first winding portion 413 is a coil conductor portion. The shape of the first winding portion 413 is, for example, a spiral shape. The first winding portion 413 includes, for example, a plurality of (for example, five) conductor pattern portions 408 (see Figure 7 B) and a spiral shape of multiple (for example, four) conducting conductor portions. In the first inductor 40, the multiple conductor pattern portions 408 and the multiple conducting conductor portions are alternately arranged one by one in the thickness direction D1 of the mounting substrate 4, and one end of two adjacent conductor pattern portions 408 in the thickness direction D1 of the mounting substrate 4 is connected to each other via a conducting conductor portion. The first winding portion 413 is conductive. The base body 400 is electrically insulating. The first external terminal 411 and the second external terminal 412 are respectively arranged at the first end and the second end in the longitudinal direction of the base body 400. The conductive material of the first external terminal 411 and the second external terminal 412 is, for example, Cu, Ag, etc. The first winding portion 413 is arranged in the base body 400. The first winding portion 413 is connected between the first external terminal 411 and the second external terminal 412. In more detail, the first winding portion 413 has a first end and a second end. The first end of the first winding portion 413 is connected to the first external terminal 411 via the first wiring portion 414, and the second end of the first winding portion 413 is connected to the second external terminal 412 via the second wiring portion 415. The material of the first winding portion 413 includes, for example, the same conductive material as the first external terminal 411 and the second external terminal 412, but is not limited thereto. The winding axis A4 of the first winding portion 413 is an imaginary central axis of the first winding portion 413. The first inductor 40 is a longitudinally wound inductor. The first inductor 40 is mounted on the mounting substrate 4, and the winding axis A4 of the first winding portion 413 is parallel to the thickness direction D1 of the mounting substrate 4. As Figure 7 As shown, the first inductor 40 is mounted on the first main surface 41 of the mounting substrate 4 by bonding the first external terminal 411 and the second external terminal 412 to the first main surface 41 of the mounting substrate 4 using a first bonding portion 611 and a second bonding portion 612 that correspond one-to-one with the first external terminal 411 and the second external terminal 412. The first bonding portion 611 and the second bonding portion 612 are each made of, for example, solder.

[0109] In the high frequency module 100, as described above, the inductor L31 constitutes the second inductor 50. The second inductor 50 is in the shape of a rectangular parallelepiped. Figure 9As shown, the second inductor 50 includes, for example, a rectangular parallelepiped base body 500, a first external terminal 511, a second external terminal 512, and a second winding portion 513. The second winding portion 513 is a coil conductor portion. The shape of the second winding portion 513 is, for example, a spiral. The second winding portion 513 includes, for example, a plurality of (for example, four) conductor pattern portions 508 ( Figure 5Reference) and a spiral shape of multiple (for example, three) conducting conductor portions. In the second inductor 50, multiple conductor pattern portions 508 and multiple conducting conductor portions are alternately arranged one by one in the thickness direction D1 of the mounting substrate 4, and one end of two adjacent conductor pattern portions 508 in the thickness direction D1 of the mounting substrate 4 is connected to each other via a conducting conductor portion. The second winding portion 513 is conductive. The blank 500 is electrically insulating. The first external terminal 511 and the second external terminal 512 are respectively arranged at the first end and the second end in the long side direction of the blank 500. The conductive material of the first external terminal 511 and the second external terminal 512 is, for example, Cu, Ag, etc. The second winding portion 513 is arranged in the blank 500. The second winding portion 513 is connected between the first external terminal 511 and the second external terminal 512. More specifically, the second winding portion 513 has a first end and a second end. The first end of the second winding portion 513 is connected to the first external terminal 511 via the first wiring portion 514, and the second end of the second winding portion 513 is connected to the second external terminal 512 via the second wiring portion 515. The material of the second winding portion 513 may include, for example, the same conductive material as the first external terminal 511 and the second external terminal 512, but is not limited thereto. The winding axis A5 of the second winding portion 513 is the imaginary central axis of the second winding portion 513. The second inductor 50 is a transversely wound inductor. The second inductor 50 is disposed on the first principal surface 41 of the mounting substrate 4, with the winding axis A5 of the second winding portion 513 extending along the first principal surface 41 of the mounting substrate 4. In other words, the second inductor 50 is disposed such that the winding axis A5 of the second winding portion 513 of the second inductor 50 is orthogonal to the thickness direction D1 of the mounting substrate 4. The phrase "the winding axis A5 of the second winding portion 513 of the second inductor 50 is perpendicular to the thickness direction D1 of the mounting substrate 4" is not limited to the case where the winding axis A5 is strictly perpendicular to the thickness direction D1 of the mounting substrate 4. The angle formed by the winding axis A5 and the thickness direction D1 of the mounting substrate 4 is, for example, 90°±10°. The winding axis A5 of the second inductor 50 is along a direction perpendicular to the thickness direction D1 of the mounting substrate 4. The winding axis A5 of the second winding portion 513 of the second inductor 50 is parallel to the short side of the base body 500 of the inductor L31 when viewed from above in the thickness direction D1 of the mounting substrate 4. The winding axis A5 of the second winding portion 513 of the second inductor 50 is parallel to the short side of the base body 500, but is not limited to being strictly parallel. The angle formed by the winding axis A5 and the short side of the base body 500 is sufficient to be 10 degrees or less. The second inductor 50 is mounted on the first main surface 41 of the mounting substrate 4 by bonding the first and second external terminals 511, 512 to the first main surface 41 of the mounting substrate 4 using first and second bonding portions that correspond one-to-one with the first and second external terminals 511, 512. The first and second bonding portions are each made of, for example, solder.

[0110] In high-frequency module 100 according to Embodiment 1, inductors L1, L2, L3, L12, L13, and L32, like inductor L31 (second inductor 50), are longitudinally wound inductors. Inductors L1, L2, L3, L12, L13, and L32 are arranged so that the winding axis of each winding portion of inductor L1, L2, L3, L12, L13, and L32 is orthogonal to the thickness direction D1 of mounting substrate 4.

[0111] The capacitors C11, C12, C13, C14, C21, C2, C31, and C33 are built into the mounting substrate 4. The first capacitor 30 (capacitor C11) includes a pair of conductor pattern portions 45 facing each other in the thickness direction D1 of the mounting substrate 4 (see FIG. 1 ). Figure 7 A and Figure 7 B) Furthermore, each of the capacitors C12 , C13 , C14 , C21 , C2 , C31 , and C33 includes a pair of conductor pattern portions facing each other in the thickness direction D1 of the mounting substrate 4 .

[0112] like Figure 7 As shown in FIG7A and FIG7B , the resin layer 5 is disposed on the first main surface 41 of the mounting substrate 4. The resin layer 5 includes a resin (for example, an epoxy resin). The resin layer 5 may also include a filler in addition to the resin.

[0113] Resin layer 5 covers electronic component E1, inductors L11, L12, L13, L1, L2, L3, L31, L32, and capacitor C32. In other words, resin layer 5 covers the outer peripheral surfaces of each of the plurality of first circuit elements (electronic components) and the principal surface of each of the plurality of first circuit elements on the side opposite to mounting substrate 4. The outer peripheral surfaces of each of the plurality of first circuit elements include four side surfaces connecting the first principal surface on the side of mounting substrate 4 and the second principal surface on the side opposite to mounting substrate 4 in the circuit element.

[0114] The metal electrode layer 6 covers the resin layer 5 and is connected to the ground terminal 107. The metal electrode layer 6 is conductive. In the high-frequency module 100, the metal electrode layer 6 is a shielding layer provided for electromagnetic shielding both inside and outside the high-frequency module 100. The metal electrode layer 6 has a multilayer structure composed of multiple stacked metal layers, but is not limited to this and may also be a single metal layer. The metal layers may contain one or more metals. In the case of a multilayer structure composed of multiple stacked metal layers, the metal electrode layer 6 may, for example, include a first stainless steel layer, a Cu layer on the first stainless steel layer, and a second stainless steel layer on the Cu layer. The first and second stainless steel layers are each made of an alloy containing Fe, Ni, and Cr. In the case of a single metal layer, the metal electrode layer 6 may, for example, be a Cu layer. The metal electrode layer 6 includes a first conductor portion 61 and a second conductor portion 62. The first conductor portion 61 covers the main surface 51 of the resin layer 5 opposite the mounting substrate 4. The second conductor portion 62 covers the outer peripheral surface 53 of the resin layer 5 and the outer peripheral surface 43 of the mounting substrate 4. The outer peripheral surface 43 of the mounting substrate 4 includes four side surfaces connecting the first main surface 41 and the second main surface 42 in the mounting substrate 4. The metal electrode layer 6 and the plurality of first ground conductors 46 (see Figure 4 ) is in contact with a portion of the outer peripheral surface of the mounting substrate 4. The plurality of first ground conductor portions 46 are connected via a second ground conductor portion 47 (see FIG. 1 ) having an area larger than that of each of the plurality of first ground conductor portions 46 when viewed from the thickness direction D1 of the mounting substrate 4. Figure 4 ) is connected to the ground terminal 107.

[0115] (2.4) Layout of high-frequency modules

[0116] In the high frequency module 100, as Figure 2 As shown, the first inductor 40 is adjacent to the elastic wave filter 10 when viewed from above in the thickness direction D1 of the mounting substrate 4. The phrase "the first inductor 40 is adjacent to the first elastic wave filter 10 when viewed from above in the thickness direction D1 of the mounting substrate 4" means that, on the first principal surface 41 of the mounting substrate 4, there are no other circuit components between the first inductor 40 and the first elastic wave filter 10, and the first inductor 40 and the elastic wave filter 10 are adjacent. In the high-frequency module 100, the winding axis A4 of the first winding portion 413 of the first inductor 40 is parallel to the thickness direction D1 of the mounting substrate 4. The phrase "the winding axis A4 of the first winding portion 413 is parallel to the thickness direction D1 of the mounting substrate 4" does not necessarily mean that they are strictly parallel; the angle formed between the winding axis A4 of the first winding portion 413 and the thickness direction D1 of the mounting substrate 4 is sufficient to be 10 degrees or less.

[0117] In the high-frequency module 100, when viewed in the direction of the winding axis A4 of the first winding portion 413 of the first inductor 40, the inner portion 416 of the first winding portion 413 of the first inductor 40 does not overlap with any of the first input / output electrode 15, the second input / output electrode 16, and the ground electrodes 17 and 18 of the first elastic wave filter 10. Furthermore, when viewed in the direction of the winding axis A4 of the first winding portion 413 of the first inductor 40, the inner portion 416 of the first winding portion 413 of the first inductor 40 does not overlap with any of the first input / output electrode 25, the second input / output electrode 26, and the ground electrodes 27 and 28 of the second elastic wave filter 20. Furthermore, in the high-frequency module 100, when viewed from the direction of the winding axis A4 of the first winding portion 413, the first inductor 40 does not overlap with any of the first input / output electrode 15, the second input / output electrode 16, and the ground electrodes 17 and 18 of the second elastic wave filter 20. The magnetic flux generated by the current flowing through the first inductor 40 is directed along the winding axis A4 of the first winding portion 413 within the inner portion 416 of the first winding portion 413.

[0118] In addition, in the high frequency module 100, as Figure 2 As shown, when viewed from above along the thickness direction D1 of the mounting substrate 4, the first elastic wave filter 10 is disposed between the first inductor 40 (inductor L11) and the inductors L12 and L13 of the hybrid filter 1. When viewed from above along the thickness direction D1 of the mounting substrate 4, the inductors L12 and L13 are adjacent to the first elastic wave filter 10. The phrase "inductors L12 and L13 are adjacent to the first elastic wave filter 10 when viewed from above along the thickness direction D1 of the mounting substrate 4" means that on the first principal surface 41 of the mounting substrate 4, there are no other circuit components between each of the inductors L12 and L13 and the first elastic wave filter 10, and each of the inductors L12 and L13 is adjacent to the first elastic wave filter 10.

[0119] In the high frequency module 100, as Figure 2As shown, the second inductor 50 is adjacent to the first elastic wave filter 10 when viewed from above in the thickness direction D1 of the mounting substrate 4. The phrase "the second inductor 50 is adjacent to the first elastic wave filter 10 when viewed from above in the thickness direction D1 of the mounting substrate 4" means that, on the first principal surface 41 of the mounting substrate 4, there are no other circuit components between the second inductor 50 and the first elastic wave filter 10, and the second inductor 50 is adjacent to the first elastic wave filter 10. In the high-frequency module 100, the winding axis A5 of the second winding portion 513 of the second inductor 50 is parallel to the second direction D12. The phrase "the winding axis A5 of the second winding portion 513 is parallel to the thickness direction D1 and the second direction D12 of the mounting substrate 4" does not necessarily mean that they are strictly parallel; the angle formed between the winding axis A5 of the second winding portion 513 and the second direction D12 is sufficient to be 10 degrees or less.

[0120] In the high-frequency module 100, as viewed in the direction of the winding axis A5 of the second winding portion 513 of the second inductor 50 (inductor L31), the inner portion 516 of the second winding portion 513 does not overlap with any of the first input / output electrode 15, the second input / output electrode 16, and the ground electrodes 17 and 18 of the first elastic wave filter 10. Furthermore, in the high-frequency module 100, as viewed in the direction of the winding axis A5 of the second winding portion 513, the second inductor 50 does not overlap with any of the first input / output electrode 15, the second input / output electrode 16, and the ground electrodes 17 and 18 of the first elastic wave filter 10. Furthermore, in the high-frequency module 100, as viewed in the direction of the winding axis A5 of the second winding portion 513 of the second inductor 50, the inner portion 516 of the second winding portion 513 of the second inductor 50 does not overlap with any of the first input / output electrode 25, the second input / output electrode 26, and the ground electrodes 27 and 28 of the second elastic wave filter 20. Furthermore, in high-frequency module 100, when viewed from the direction of winding axis A5 of second winding portion 513, second inductor 50 does not overlap with any of the first input / output electrode 25, second input / output electrode 26, and ground electrodes 27 and 28 of second elastic wave filter 20. The magnetic flux generated by current flowing through second inductor 50 is directed along winding axis A5 of second winding portion 513 within inner portion 516 of second winding portion 513.

[0121] In the high-frequency module 100, the second inductor 50 and the second capacitor 60 are aligned in the direction of the winding axis A5 of the second winding portion 513 of the second inductor 50. When viewed from above in the thickness direction D1 of the mounting substrate 4, the second capacitor 60 (capacitor C32) is located between the first inductor 40 (inductor L11) and the second inductor 50 (inductor L31). In the high-frequency module 100, the second inductor 50 and the second capacitor 60 are adjacent to each other when viewed from above in the thickness direction D1 of the mounting substrate 4. The phrase "the second inductor 50 is adjacent to the elastic wave filter 10" means that, on the first principal surface 41 of the mounting substrate 4, there are no other circuit components between the second inductor 50 and the second capacitor 60, and the second inductor 50 and the second capacitor 60 are adjacent to each other.

[0122] In the high frequency module 100, as Figure 2 As shown, second capacitor 60 (capacitor C32) is adjacent to first elastic wave filter 10 when viewed in plan from thickness direction D1 of mounting substrate 4. The phrase "second capacitor 60 is adjacent to first elastic wave filter 10 when viewed in plan from thickness direction D1 of mounting substrate 4" means that, on first principal surface 41 of mounting substrate 4, there are no other circuit components between second capacitor 60 and first elastic wave filter 10, and second capacitor 60 is adjacent to first elastic wave filter 10.

[0123] When viewed from the thickness direction D1 of the mounting substrate 4, the first capacitor 30 (see Figure 7 A) Overlapping with the first inductor 40. In the high-frequency module 100, the entire first capacitor 30 overlaps with a portion of the first inductor 40 when viewed in plan from the thickness direction D1 of the mounting substrate 4. However, this is not limiting. For example, the entire first capacitor 30 may overlap with a portion of the first inductor 40, the entire first capacitor 30 may overlap with the entire first inductor 40, or a portion of the first capacitor 30 may overlap with the entire first inductor 40.

[0124] As described above, when viewed from the thickness direction D1 of the mounting substrate 4, the mounting substrate 4 has a rectangular shape. Figure 3 As shown, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 are respectively arranged at the first corner 421, the second corner 422, the third corner 423, and the fourth corner 424 of the second main surface 42 of the mounting substrate 4. When viewed from above in the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 have a rectangular shape, but the present invention is not limited to this and may also have a circular shape.

[0125] In the high-frequency module 100, the inductor L1 overlaps the first signal terminal 101 when viewed in plan from the thickness direction D1 of the mounting substrate 4. In the high-frequency module 100, a portion of the inductor L1 overlaps a portion of the first signal terminal 101 when viewed in plan from the thickness direction D1 of the mounting substrate 4. However, this is not limiting. For example, a portion of the inductor L1 may overlap the entire first signal terminal 101, or the entire inductor L1 may overlap a portion of the first signal terminal 101, or the entire inductor L1 may overlap the entire first signal terminal 101.

[0126] In the high-frequency module 100, when viewed from the thickness direction D1 of the mounting substrate 4, the capacitor C13 (see Figure 4 ) overlaps with the second signal terminal 102. In the high-frequency module 100, when viewed from above in the thickness direction D1 of the mounting substrate 4, a portion of the capacitor C13 overlaps with the entire second signal terminal 102. However, the present invention is not limited to this. For example, the entire capacitor C13 may overlap with a portion of the second signal terminal 102, or the entire capacitor C13 may overlap with the entire second signal terminal 102.

[0127] Furthermore, in high-frequency module 100, second elastic wave filter 20 overlaps third signal terminal 103 when viewed in plan from thickness direction D1 of mounting substrate 4. In high-frequency module 100, a portion of second elastic wave filter 20 overlaps a portion of third signal terminal 103 when viewed in plan from thickness direction D1 of mounting substrate 4.

[0128] Furthermore, in high-frequency module 100, inductor L33 overlaps with fourth signal terminal 104 when viewed in plan from the thickness direction D1 of mounting substrate 4. In high-frequency module 100, a portion of inductor L33 overlaps with a portion of fourth signal terminal 104 when viewed in plan from the thickness direction D1 of mounting substrate 4. However, this is not limiting. For example, the entire inductor L33 may overlap with a portion of fourth signal terminal 104.

[0129] In the high-frequency module 100, when viewed from the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 are not aligned with the second ground conductor 47 (see FIG. Figure 4 )overlapping.

[0130] In the first inductor 40, the first external terminal 411 and the common path Ru0 (see Figure 1 ) is connected, and the second external terminal 412 is connected to the first elastic wave filter 10. In the high frequency module 100, as shown in FIG. Figure 7As shown in FIG. 1A , the shortest distance W1 between the first wiring portion 414 of the first inductor 40 and the metal electrode layer 6 in the thickness direction D1 of the mounting substrate 4 is longer than the shortest distance W2 between the second wiring portion 415 of the first inductor 40 and the metal electrode layer 6 in the thickness direction D1 of the mounting substrate 4 .

[0131] (3) Effect

[0132] (3.1) High-frequency module

[0133] A high-frequency module 100 according to Embodiment 1 includes a mounting substrate 4, a first signal terminal 101, a second signal terminal 102, a ground terminal 107, and a hybrid filter 1. The mounting substrate 4 has a first principal surface 41 and a second principal surface 42 that face each other. The first signal terminal 101, the second signal terminal 102, and the ground terminal 107 are arranged on the second principal surface 42 of the mounting substrate 4. The hybrid filter 1 is connected between the first signal terminal 101 and the second signal terminal 102. The hybrid filter 1 includes an elastic wave filter 10 having at least one elastic wave resonator 14, an inductor 40 having a winding portion 413, and a capacitor 30. The elastic wave filter 10 has a plurality of external electrodes connected to the first principal surface 41 of the mounting substrate 4. The plurality of external electrodes include a first input / output electrode 15 connected to the first signal terminal 101, a second input / output electrode 16 connected to the second signal terminal 102, and ground electrodes 17 and 18 connected to the ground terminal 107. The inductor 40 is disposed on the first principal surface 41 of the mounting substrate 4 and is adjacent to the elastic wave filter 10 when viewed in plan from the thickness direction D1 of the mounting substrate 4. When viewed from the direction of the winding axis A4 of the winding portion 413 of the inductor 40, the inner portion 416 of the winding portion 413 of the inductor 40 does not overlap with any of the first input / output electrode 15, the second input / output electrode 16, or the ground electrodes 17 and 18.

[0134] In the high-frequency module 100 of Embodiment 1, since the inner portion 416 of the winding portion 413 of the inductor 40 does not overlap with any of the first input / output electrode 15 , the second input / output electrode 16 , and the ground electrodes 17 and 18 when viewed from the direction of the winding axis A4 of the winding portion 413 of the inductor 40 , electromagnetic field coupling between the inductor 40 and the first input / output electrode 15 , the second input / output electrode 16 , and the ground electrodes 17 and 18 of the elastic wave filter 10 is suppressed. Consequently, the high-frequency module 100 can suppress degradation of the characteristics of the hybrid filter 1 due to the influence of the magnetic field of the inductor 40 , thereby suppressing degradation of the characteristics of the high-frequency module 100 . More specifically, the high-frequency module 100 can suppress degradation of attenuation near the passband of the hybrid filter 1 caused by the influence of the magnetic field of the inductor 40 .

[0135] In addition, the high-frequency module 100 of the first embodiment is a longitudinally wound inductor 40 (inductor L11), which is similar to the Figure 11 Compared to the case where the inductor 40 (inductor L11 ) is a transversely wound inductor as in the high-frequency module 100 of the first modification shown, the attenuation near the passband of the hybrid filter 1 can be improved.

[0136] Furthermore, in the high-frequency module 100, the potential of the second external terminal 412 of the inductor 40 is different from the potential of the first input / output electrode 25 of the second elastic wave filter 20. In other words, there is a potential difference between the potential of the second external terminal 412 of the inductor 40 and the potential of the first input / output electrode 25 of the second elastic wave filter 20. In this case, the high-frequency module 100 suppresses electromagnetic field coupling between the second external terminal 412 of the inductor 40 and the first input / output electrode 25 of the second elastic wave filter 20, because the inner portion 416 of the winding portion 413 of the inductor 40 does not overlap with the first input / output electrode 25 of the second elastic wave filter 20 when viewed from the direction of the winding axis A4 of the winding portion 413 of the inductor 40. Thus, the high-frequency module 100 suppresses electromagnetic field coupling between the second external terminal 412 of the inductor 40 and the first input / output electrode 25 of the second elastic wave filter 20, which have different potentials, and suppresses electromagnetic field coupling between the second filter 2 (see FIG. 2 ). Figure 1 ) is degraded by the influence of the magnetic field of the inductor 40, and degradation of the characteristics of the high-frequency module 100 can be suppressed.

[0137] However, the high-frequency module 100 of the first embodiment includes the metal electrode layer 6, which can suppress changes in the characteristics of the hybrid filter 1 due to the influence of electromagnetic waves from outside the high-frequency module 100. On the other hand, the high-frequency module 100 of the first embodiment may have a change in attenuation near the passband of the second filter 2 compared to a case without the metal electrode layer 6. Figure 12 : is a frequency characteristic diagram of attenuation of the second filter in the high-frequency module of Modification 1 and the second filter in the high-frequency module of Modification 2. Figure 12 In the figure, the solid line shows the frequency characteristics of the attenuation of the second filter of the high-frequency module of Modification 1, and the dotted line shows the frequency characteristics of the attenuation of the second filter of the high-frequency module of Modification 2. The high-frequency module of Modification 2 differs from the high-frequency module 100 of Embodiment 1 in that it does not include the metal electrode layer 6 of the high-frequency module 100 of Embodiment 1 and that it includes a transversely wound inductor instead of the first inductor 40, which is a longitudinally wound inductor. Figure 12 It can be seen that in the high-frequency module of the first modification including the metal electrode layer 6, the attenuation near the passband of the second filter is deteriorated compared to the high-frequency module of the second modification not including the metal electrode layer 6. Figure 12It can be seen that the attenuation at 2370 MHz included in the frequency band of Band 40 of the 3GPP LTE standard deteriorates from 45 dB to 40 dB.

[0138] in addition, Figure 13 : is a graph showing the frequency characteristics of attenuation of the second filter 2 in the high-frequency module 100 of the first embodiment and the second filter in the high-frequency module of the second modification. Figure 13 In FIG. 1 , the attenuation frequency characteristics of the second filter 2 of the high-frequency module 100 according to the first embodiment are shown by a solid line, and the attenuation frequency characteristics of the second filter of the high-frequency module according to the second modification are shown by a dotted line. Figure 12 as well as Figure 13 It can be seen that in the high-frequency module 100 of the first embodiment, the attenuation degradation near the passband of the second filter 2 is suppressed compared to the high-frequency module of the first modification in which the inductor 40 is a transversely wound inductor. Figure 13 It can be seen that the attenuation at 2370 MHz included in the frequency band of Band 40 of the 3GPP LTE standard is improved to 42 dB.

[0139] Furthermore, the high-frequency module 100 of the first embodiment includes, as described above, a resin layer 5 covering the first inductor 40 and the elastic wave filter 10, and a metal electrode layer 6 covering the resin layer 5. In the first inductor 40, the first external terminal 411 is connected to the common path Ru0, and the second external terminal 412 is connected to the first elastic wave filter 10. In the high-frequency module 100, the shortest distance W1 between the first wiring portion 414 of the first inductor 40 and the metal electrode layer 6 in the thickness direction D1 of the mounting substrate 4 is longer than the shortest distance W2 between the second wiring portion 415 of the first inductor 40 and the metal electrode layer 6 in the thickness direction D1 of the mounting substrate 4. Consequently, the high-frequency module 100 of the first embodiment can suppress path coupling between the first wiring portion 414 of the first inductor 40 and the second input / output electrode 26 and the third signal terminal 103 of the second elastic wave filter 20 via the metal electrode layer 6, compared to a case where the first wiring portion 414 and the second wiring portion 415 of the first inductor 40 are arranged so that the shortest distance W1 is shorter than the shortest distance W2. Therefore, high-frequency module 100 according to the first embodiment can improve the isolation between first input / output electrode 25 and second input / output electrode 26 of second elastic wave filter 20 , thereby suppressing degradation in the characteristics of second filter 2 .

[0140] (3.2) Communication device

[0141] The communication device 300 of the first embodiment includes the high-frequency module 100 and the signal processing circuit 301 connected to the high-frequency module 100 . Thus, the communication device 300 can suppress degradation of the characteristics of the high-frequency module 100 .

[0142] (Implementation Method 2)

[0143] Reference Figure 14 A high-frequency module 100b according to Embodiment 2 will be described. Components of the high-frequency module 100b according to Embodiment 2 that are identical to those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0144] The high-frequency module 100b of the second embodiment differs from the high-frequency module 100 of the first embodiment in that it does not include the second filter 2 and the third filter 3 of the high-frequency module 100 of the first embodiment. The high-frequency module 100b replaces the electronic component E1 (see FIG. 1 ) having the elastic wave filter 10 (first elastic wave filter 10) and the second elastic wave filter 20. Figure 2 ), and includes the elastic wave filter 10. In the high-frequency module 100b of the second embodiment, the inductor 40 and the elastic wave filter 10 are adjacent to each other in the short side direction of the inductor 40 when viewed from the thickness direction D1 of the mounting substrate 4.

[0145] Furthermore, in high-frequency module 100b, the shortest distance between ground electrode 17 of elastic wave filter 10 and inductor 40 (inductor L11) is shorter than the shortest distance between first input / output electrode 15 of elastic wave filter 10 and inductor 40, the shortest distance between second input / output electrode 16 of elastic wave filter 10 and inductor 40, and the shortest distance between ground electrode 18 of elastic wave filter 10. In high-frequency module 100b, the potential of inductor 40 is equal to that of first input / output electrode 15 of elastic wave filter 10. Furthermore, in high-frequency module 100b, the potential of inductor 40 is different from that of ground electrode 17 of elastic wave filter 10. In other words, there is a potential difference between the potential of inductor 40 and the potential of ground electrode 17 of elastic wave filter 10. Here, in the high-frequency module 100b, since the inner portion 416 of the winding portion 413 of the inductor 40 does not overlap with the ground electrode 17 when viewed from the direction of the winding axis A4 of the winding portion 413 of the inductor 40, electromagnetic field coupling between the inductor 40 and the ground electrode 17 of the elastic wave filter 10 can be suppressed. Thus, the high-frequency module 100b can suppress electromagnetic field coupling between the inductor 40 and the ground electrode 17, which have different potentials, and can suppress the hybrid filter 1 (see Figure 1 ) is degraded by the magnetic field of inductor 40, thereby suppressing degradation of the characteristics of high-frequency module 100b. More specifically, high-frequency module 100b can suppress attenuation degradation near the passband of hybrid filter 1 caused by the magnetic field of inductor 40.

[0146] Figure 15 This is the hybrid filter 1 in the high-frequency module 100b of the second embodiment (see Figure 1) and the frequency characteristics of the hybrid filters in the high-frequency module of Comparative Example 1. Figure 15 In FIG. 1 , the solid line represents the frequency characteristics of the attenuation of the hybrid filter 1 of the high-frequency module 100b of the second embodiment, and the dotted line represents the frequency characteristics of the attenuation of the hybrid filter of the high-frequency module of the first comparative example. The high-frequency module of the first comparative example differs from the high-frequency module 100 of the first embodiment in the point where the winding portion 413 of the inductor 40 overlaps with the ground electrode 17 when viewed from the winding axis A4 of the winding portion 413 of the inductor 40. Figure 15 It can be seen that in the high-frequency module 100 b according to the second embodiment, the attenuation degradation of the hybrid filter 1 is suppressed compared to the high-frequency module according to the first comparative example.

[0147] (Implementation 3)

[0148] Reference Figure 16 A high-frequency module 100c according to Embodiment 3 will be described. Components of the high-frequency module 100c according to Embodiment 3 that are identical to those of the high-frequency module 100b according to Embodiment 2 are denoted by the same reference numerals, and their description will be omitted.

[0149] High-frequency module 100 c according to the third embodiment differs from high-frequency module 100 b according to the second embodiment in that the inductor 40 and the elastic wave filter 10 are adjacent to each other in the short-side direction of the inductor 40 when viewed in plan from the thickness direction D1 of the mounting substrate 4 .

[0150] High-frequency module 100c, like high-frequency module 100b, does not overlap ground electrode 17 when viewed from the direction of winding axis A4 of winding portion 413 of inductor 40. This suppresses electromagnetic field coupling between inductor 40 and ground electrode 17 of elastic wave filter 10. High-frequency module 100c can thus suppress electromagnetic field coupling between inductor 40 and ground electrode 17, which have different potentials, and can also suppress the effects of hybrid filter 1 (see Figure 1 ) due to the influence of the magnetic field of the inductor 40, thereby suppressing the degradation of the characteristics of the high-frequency module 100c. More specifically, the high-frequency module 100c can suppress the attenuation degradation near the passband of the hybrid filter 1 caused by the influence of the magnetic field of the inductor 40.

[0151] (Implementation 4)

[0152] Reference Figure 17 A high-frequency module 100d according to Embodiment 4 will be described. Components of the high-frequency module 100d according to Embodiment 4 that are identical to those of the high-frequency module 100b according to Embodiment 2 are denoted by the same reference numerals, and their description will be omitted.

[0153] The high-frequency module 100 d of the fourth embodiment differs from the high-frequency module 100 b of the second embodiment in that the inductor 40 is a transversely wound inductor and the winding axis A4 of the winding portion 413 of the inductor 40 is along the short side direction of the inductor 40 .

[0154] In the high-frequency module 100d, since the inner portion of the winding portion 413 of the inductor 40 does not overlap with the ground electrode 17 when viewed from the direction of the winding axis A4 of the winding portion 413 of the inductor 40, electromagnetic field coupling between the inductor 40 and the ground electrode 17 of the elastic wave filter 10 can be suppressed. As a result, the high-frequency module 100d can suppress electromagnetic field coupling between the inductor 40 and the ground electrode 17, which have different potentials, and can suppress the hybrid filter 1 (see Figure 1 ) is degraded by the magnetic field of the inductor 40, thereby suppressing degradation of the characteristics of the high-frequency module 100d. More specifically, the high-frequency module 100d can suppress attenuation degradation near the passband of the hybrid filter 1 caused by the magnetic field of the inductor 40.

[0155] (Implementation 5)

[0156] Reference Figure 18 A high-frequency module 100e according to Embodiment 5 will be described. Components of the high-frequency module 100e according to Embodiment 5 that are identical to those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and their description will be omitted.

[0157] When viewed in plan view from the thickness direction of the mounting substrate 4, the third signal terminal 103 does not overlap with any of the multiple circuit elements arranged on the mounting substrate 4. The multiple circuit elements include the electronic component E1, the inductors L11, L12, and L13 of the hybrid filter 1, the inductors L31 and L32 and the capacitor C32 of the third filter 3, the capacitors C11, C12, C13, and C14 and the capacitor C2 of the hybrid filter 1, and the inductor L33 and the capacitors C31 and C33 of the third filter 3.

[0158] High-frequency module 100 of Embodiment 5 can suppress electromagnetic coupling between third signal terminal 103 and multiple circuit elements, and improve isolation between first input / output electrode 25 and second input / output electrode 26 of second elastic wave filter 20. Consequently, high-frequency module 100e can suppress degradation of attenuation frequency characteristics.

[0159] Figure 19 This is the second filter 2 in the high-frequency module 100e of the fifth embodiment (see Figure 1 ) and the frequency characteristics of the attenuation of the second filter in the high-frequency module of Comparative Example 2. Figure 19In FIG. 1 , the solid line represents the attenuation frequency characteristics of the second filter 2 of the high-frequency module 100e of the fifth embodiment, and the dashed line represents the attenuation frequency characteristics of the second filter of the high-frequency module of the second comparative example. When viewed from the thickness direction of the mounting substrate 4, the high-frequency module of the second comparative example differs from the high-frequency module 100 of the fifth embodiment in that the point where the third signal terminal 103 overlaps with the inductor arranged on the mounting substrate 4 is different. Figure 19 It can be seen that in the high-frequency module 100 e of the fifth embodiment, the attenuation degradation of the second filter 2 is suppressed compared to the high-frequency module of the second comparative example.

[0160] (Variation)

[0161] The above-mentioned embodiments 1 to 5 are only one of various embodiments of the present invention. As long as the object of the present invention can be achieved, various changes can be made to the above-mentioned embodiments 1 to 5 according to the design and the like.

[0162] For example, multiplexer 110 constituting high-frequency module 100 is not limited to a triplexer and may be a duplexer including only two filters: first filter 1 and second filter 2 of the hybrid filter (first filter 1), second filter 2, and third filter 3. Alternatively, multiplexer 110 may be a quadruplexer including a fourth filter in addition to first filter 1, second filter 2, and third filter 3.

[0163] The high-frequency modules 100 , 100 a , and 100 e include an electronic component E1 having a first elastic wave filter 10 and a second elastic wave filter 20 . However, the present invention is not limited thereto, and the first elastic wave filter 10 and the second elastic wave filter 20 may be provided as separate electronic components.

[0164] The second capacitor 60 adjacent to the inductor 40 of the hybrid filter 1 is not limited to the capacitor C32 of the third filter 3, and may be, for example, the capacitor C11 of the hybrid filter 1. Furthermore, the second inductor 50 adjacent to the second capacitor 60 on the side opposite to the inductor 40 as viewed from the second capacitor 60 is not limited to the inductor L31 of the third filter 3, and may be, for example, the inductor L12 of the hybrid filter 1.

[0165] In high-frequency modules 100, 100a, 100b, 100c, 100d, and 100e, the metal electrode layer 6 only needs to cover at least a portion of the resin layer 5 and at least a portion of the outer peripheral surface 43 of the mounting substrate 4. For example, the metal electrode layer 6 may have an opening that exposes a portion of the principal surface 51 of the resin layer 5. Furthermore, the metal electrode layer 6 may be in contact with the principal surface of the elastic wave filter 10 opposite the mounting substrate 4 side. Furthermore, in high-frequency modules 100, 100a, 100b, 100c, 100d, and 100e, the metal electrode layer 6 does not necessarily need to reach the outer edge 432 of the second principal surface 42 of the mounting substrate 4.

[0166] Furthermore, in the high-frequency module 100e, when viewed from above in the thickness direction D1 of the mounting substrate 4, the third signal terminal 103 does not overlap with any of the multiple circuit elements arranged on the mounting substrate 4. However, this is not limiting. The module may also be configured so that, when viewed from above in the thickness direction D1 of the mounting substrate 4, at least one of the first signal terminal 101, the second signal terminal 102, and the third signal terminal 103 does not overlap with any of the multiple circuit elements arranged on the mounting substrate 4.

[0167] In addition, the circuit structure of the high-frequency modules 100, 100a, and 100e is not limited to Figure 1 example.

[0168] The first elastic wave filter 10 is not limited to a surface acoustic wave filter, but may also be a bulk acoustic wave filter. In a bulk acoustic wave filter, each of the plurality of elastic wave resonators 14 is a BAW (Bulk Acoustic Wave) resonator.

[0169] The second elastic wave filter 20 is not limited to being a surface acoustic wave filter, but may also be a bulk acoustic wave filter. In a bulk acoustic wave filter, each of the plurality of elastic wave resonators 24 is a BAW resonator.

[0170] Furthermore, the first elastic wave filter 10 is not limited to a π-type filter, but may also be a ladder-type filter. Furthermore, the first elastic wave filter 10 only needs to include at least one elastic wave resonator 14 .

[0171] Furthermore, each of the first elastic wave filter 10 and the second elastic wave filter 20 may be an elastic wave filter utilizing, for example, boundary elastic waves, plate waves, or the like.

[0172] The circuit structure of the high frequency circuit 200 is not limited to the above Figure 1The high-frequency circuit 200 may include, for example, a high-frequency front-end circuit supporting MIMO (Multi Input Multi Output) or ENDC (Evolved-Universal Terrestrial Radio Access New Radio Dual Connectivity) as a circuit configuration.

[0173] (Way)

[0174] In this specification, the following aspects are disclosed.

[0175] A high-frequency module (100; 100a; 100b; 100c; 100d, 100e) of the first embodiment includes a mounting substrate (4), a first signal terminal (101), a second signal terminal (102), a ground terminal (107), and a hybrid filter (1). The mounting substrate (4) has a first main surface (41) and a second main surface (42) facing each other. The first signal terminal (101), the second signal terminal (102), and the ground terminal (107) are arranged on the second main surface (42) of the mounting substrate (4). The hybrid filter (1) is connected between the first signal terminal (101) and the second signal terminal (102). The hybrid filter (1) includes an elastic wave filter (10) having at least one elastic wave resonator (14), an inductor (40) having a winding portion (413), and a capacitor (30). The elastic wave filter (10) has a plurality of external electrodes connected to the first main surface (41) of the mounting substrate (4). The plurality of external electrodes include a first input / output electrode (15) connected to a first signal terminal (101), a second input / output electrode (16) connected to a second signal terminal (102), and a ground electrode (17) connected to a ground terminal (107). The inductor (40) is disposed on a first main surface (41) of a mounting substrate (4) and is adjacent to the elastic wave filter (10) when viewed from above in a thickness direction (D1) of the mounting substrate (4). When viewed from the direction of a winding axis (A4) of a winding portion (413) of the inductor (L40), an inner portion (416) of the winding portion (413) of the inductor (L11) does not overlap with any of the first input / output electrode (15), the second input / output electrode (16), and the ground electrode (17).

[0176] A high-frequency module (100; 100a; 100b; 100c; 100d; 100e) of a first embodiment is capable of suppressing electromagnetic field coupling between the inductor (40) and the first input / output electrode (15), the second input / output electrode (16), and the ground electrode (17) of the elastic wave filter (10) because the inner portion (416) of the winding portion (413) of the inductor (40) does not overlap with any of the first input / output electrode (15), the second input / output electrode (16), and the ground electrode (17) when viewed from the direction of the winding axis (A4) of the winding portion (413) of the inductor (40). Thus, the high-frequency module (100; 100a; 100b; 100c; 100d; 100e) can suppress degradation of the characteristics of the high-frequency module (100; 100a; 100b; 100c; 100d; 100e).

[0177] In the high-frequency module (100; 100a; 100b; 100c; 100e) of the second embodiment, in the first embodiment, the winding axis (A4) of the winding portion (413) of the inductor (40) is parallel to the thickness direction (D1) of the mounting substrate (4).

[0178] The high-frequency module (100; 100a; 100b; 100c; 100e) of the second embodiment can further suppress degradation of the characteristics of the high-frequency module (100; 100a; 100b; 100c; 100e).

[0179] The high-frequency module (100; 100a) of the third embodiment, in the first or second embodiment, further comprises a second inductor (50) separate from the inductor (40), i.e., the first inductor (40), and a second capacitor (60) separate from the capacitor (30), i.e., the first capacitor (30). The second inductor (50) has a second winding portion (513) that is different from the winding portion (413) of the inductor (40), i.e., the first winding portion (413). The second capacitor (60) is arranged on the first main surface (41) of the mounting substrate (4). The second inductor (50) is arranged on the first main surface (41) of the mounting substrate (4). When viewed from the direction of the winding axis (A5) of the second winding portion (513) of the second inductor (50), the inner portion (516) of the second winding portion (513) does not overlap with any of the first input / output electrode (15), the second input / output electrode (16), and the ground electrode (17). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the second capacitor (60) is located between the first inductor (40) and the second inductor (50).

[0180] In a high-frequency module (100; 100a) of a third type, electromagnetic coupling between a first inductor (40) and a second inductor (50) can be suppressed, and degradation of characteristics of a hybrid filter (1) can be suppressed.

[0181] In the high-frequency module (100; 100a) of the fourth embodiment, in the third embodiment, the winding axis (A5) of the second winding portion (513) of the second inductor (50) is orthogonal to the winding axis (A4) of the first winding portion (413) of the first inductor (40).

[0182] The high-frequency module (100; 100a) of the fourth embodiment can further suppress the electromagnetic coupling between the first inductor (40) and the second inductor (50).

[0183] A fifth embodiment of a high-frequency module (100; 100a; 100b; 100c; 100d; 100e) further comprises a resin layer (5) and a metal electrode layer (6) in any one of the first to fourth embodiments. The resin layer (5) is disposed on a first main surface (41) of a mounting substrate (49). The resin layer (5) covers at least a portion of the elastic wave filter (10) and the inductor. The metal electrode layer (6) covers at least a portion of the resin layer (5) and at least a portion of the outer peripheral surface (43) of the mounting substrate (4). The metal electrode layer (6) is connected to a ground terminal (107).

[0184] A fifth aspect of the high-frequency module (100; 100a; 100b; 100c; 100d; 100e) can suppress degradation of the characteristics of a hybrid filter (1) due to the influence of electromagnetic waves from outside the high-frequency module (100; 100a; 100b; 100c; 100d; 100e).

[0185] A sixth embodiment of a high-frequency module (100; 100a; 100b) further comprises, in any one of the first to fourth embodiments, a third signal terminal (103) and a second filter (2), the second filter (2) being different from the hybrid filter (1), i.e., the first filter (1). The third signal terminal (103) is disposed on the second main surface (42) of the mounting substrate (4). The second filter (2) is connected between the first signal terminal (101) and the third signal terminal (103).

[0186] A high-frequency module (100; 100a; 100e) of a sixth embodiment can be used as a multiplexer (110) including a first filter (1) and a second filter (2).

[0187] In a high-frequency module (100; 100a; 100e) of a seventh embodiment, in the sixth embodiment, the second filter (2) includes a second elastic wave filter (20), which is different from the elastic wave filter (10), that is, the first elastic wave filter (10). The second filter (2) has a plurality of second external electrodes (a first input / output electrode 25, a second input / output electrode 26, and two ground electrodes 27 and 28), which are different from the plurality of external electrodes of the first filter (1), that is, the plurality of first external electrodes.

[0188] In the high-frequency module (100; 100a; 100e) of the eighth embodiment, in the seventh embodiment, the first elastic wave filter (10) includes a first substrate (substrate 1000). The second elastic wave filter (20) includes a second substrate (substrate 1000). The first substrate and the second substrate are shared.

[0189] The high-frequency module (100; 100a; 100e) of the ninth embodiment, in any one of the sixth to eighth embodiments, further comprises a resin layer (5) and a metal electrode layer (6). The resin layer (5) is arranged on the first main surface (41) of the mounting substrate (4). The resin layer (5) covers at least a portion of the elastic wave filter (10) and the inductor. The metal electrode layer (6) covers at least a portion of the resin layer (5) and at least a portion of the outer peripheral surface (43) of the mounting substrate (4). The metal electrode layer (6) is connected to the ground terminal (107). The inductor (40) further comprises a first external terminal (411) and a second external terminal (412), a first wiring portion (414), and a second wiring portion (415). The first external terminal (411) and the second external terminal (412) are connected to the first main surface (41) of the mounting substrate (4). The first wiring portion (414) connects the first end of the winding portion (413) and the first external terminal (411). The second wiring portion (415) connects the second end of the winding portion (413) to the second external terminal (412). In the inductor (40), the first external terminal (411) is connected to a common path (Ru0) of a first path (Ru1) between the first filter (1) and the first signal terminal (101) and a second path (Ru2) between the second filter (2) and the first signal terminal (101), and the second external terminal (412) is connected to the elastic wave filter (10). The shortest distance (W1) between the first wiring portion (414) and the metal electrode layer (6) in the thickness direction (D1) of the mounting substrate (4) is longer than the shortest distance (W2) between the second wiring portion (415) and the metal electrode layer (6) in the thickness direction (D1) of the mounting substrate (4).

[0190] The high-frequency module (100; 100a; 100e) of the ninth embodiment can suppress the path coupling between the first wiring portion (414) of the first inductor (40) and the second wiring portion (415) via the metal electrode layer (6) and the second elastic wave filter (20) and the third signal terminal (103), compared to the case where the first wiring portion (414) and the second wiring portion (415) of the first inductor (40) are arranged so that the shortest distance (W1) is shorter than the shortest distance (W2). Therefore, the high-frequency module (100) of the ninth embodiment can improve the isolation between the first input / output electrode (25) and the second input / output electrode (26) of the second elastic wave filter (20), and can suppress the degradation of the characteristics of the second filter (2).

[0191] The high-frequency module of the tenth embodiment, in any one of the sixth to ninth embodiments, further comprises a fourth signal terminal (104) and a third filter (3). The fourth signal terminal (104) is arranged on the second main surface (42) of the mounting substrate (4). The third filter (3) is connected between the first signal terminal (101) and the fourth signal terminal (104). The third filter (3) includes a second inductor (50) and a second capacitor (60).

[0192] In an eleventh embodiment of the high-frequency module (100; 100a; 100b), in any one of the sixth to tenth embodiments, when viewed from above in the thickness direction of the mounting substrate (4), the third signal terminal (103) does not overlap with any of a plurality of circuit elements arranged on the mounting substrate (4). The plurality of circuit elements include an elastic wave filter (10), an inductor (40), and a capacitor (30).

[0193] The high-frequency module (100; 100a; 100b; 100e) of the eleventh embodiment can suppress electromagnetic coupling between the third signal terminal (103) and a plurality of circuit elements, and can improve the isolation between the first input / output electrode (25) and the second input / output electrode (26) of the second elastic wave filter (20). Thus, the high-frequency module (100e) can suppress degradation of attenuation frequency characteristics.

[0194] A communication device (300) according to a twelfth embodiment comprises a high-frequency module (100; 100a; 100b; 100c; 100d; 100e) according to any one of the first to eleventh embodiments and a signal processing circuit (301). The signal processing circuit (301) is connected to the high-frequency module (100; 100a; 100b; 100c; 100d; 100e).

[0195] A communication device (300) according to a twelfth aspect can suppress degradation of characteristics of a high-frequency module (100; 100a; 100b; 100c; 100d; 100e).

[0196] Description of Reference Numerals

[0197] 1…Hybrid filter (first filter); 10…Elastic wave filter (first elastic wave filter); 14…Elastic wave resonator; 140…First IDT electrode; 15…First input / output electrode; 16…Second input / output electrode; 17…Ground electrode; 18…Ground electrode; 150…Path (series arm path); 151…Path (parallel arm path); 152…Path (parallel arm path); 2…Second filter; 20…Second elastic wave filter; 24…Elastic wave resonator; 240…Second IDT electrode; 25…First input / output electrode; 26…Second input / output electrode; 27…Ground electrode; 28…Ground electrode; 250…Path (series arm path); 251…Path (parallel arm path) ; 252…path (parallel arm path); 253…path (parallel arm path); 254…path (parallel arm path); 255…path (parallel arm path); 3…third filter; 4…mounting substrate; 41…first principal surface; 42…second principal surface; 421…first corner; 422…second corner; 423…third corner; 424…fourth corner; 43…outer peripheral surface; 431…outer edge; 432…outer edge; 46…first ground conductor; 47…second ground conductor; 5…resin layer; 51…principal surface; 53…outer peripheral surface; 6…metal electrode layer; 61…first conductor; 62…second conductor; 7…first switch; 70…common terminal; 71…selection terminal; 72…selection terminal; 8…second switch ;80…common terminal;81…selection terminal;82…selection terminal;9…third switch;90…common terminal;91…selection terminal;92…selection terminal;30…capacitor (first capacitor);40…inductor (first inductor);400…body;408…conductor pattern portion;411…first external terminal;412…second external terminal;413…winding portion (first winding portion);414…first wiring portion;415…second wiring portion;416…inner portion;50…second inductor;500…body;508…conductor pattern portion;511…first external terminal;512…second external terminal;513…second winding portion;514…first wiring portion;515…second wiring portion;516 ...inner portion; 60...second capacitor; 100, 100a, 100b, 100c, 100d, 100e...high-frequency module; 101...first signal terminal; 102...second signal terminal; 1020...outer edge; 1021...first side; 1022...second side; 103...third signal terminal; 1030...outer edge; 1031...first side; 1032...second side; 104...fourth signal terminal; 107...ground terminal; 110...multiplexer; 111...first transmit filter; 112...second transmit filter; 113...third transmit filter; 121...first receive filter; 122...second receive filter; 123...third receive filter; 131...first output matching circuit;132…second output matching circuit; 133…third output matching circuit; 141…first input matching circuit; 142…second input matching circuit; 143…third input matching circuit; 161…first low-noise amplifier; 162…second low-noise amplifier; 163…third low-noise amplifier; 171…first power amplifier; 172…second power amplifier; 173…third power amplifier; 200…high-frequency circuit; 300…communication device; 301…communication signal processing circuit; 302…RF signal processing circuit; 303…baseband signal processing circuit; 309…antenna; 1000…substrate; 1001…first main surface; 1002…second main surface; 1006…spacer layer; 1007…cover member; A4…winding axis; A5…winding axis; C2…capacitor; C11…capacitor; C12…capacitor; C13…capacitor; C14…capacitor; C31…capacitor; C32…capacitor; C33…capacitor; C 21…capacitor; C22…capacitor; D1…thickness direction; D11…first direction; D12…second direction; E1…electronic component; L1…inductor; L2…inductor; L3…inductor; L11…inductor; L12…inductor; L31…inductor; L32…inductor; L33…inductor; L20…inductor; P11, P12…parallel arm resonator; P21, P22, P23, P24, P25…parallel arm resonator; Ru0 ...common path; Ru1...first path; Ru2...second path; S11...series arm resonator; S21, S32, S33, S34, S35...series arm resonator; T0...antenna terminal; T11...first signal input terminal; T12...second signal input terminal; T13...third signal input terminal; T21...first signal output terminal; T22...second signal output terminal; T23...third signal output terminal; W1...shortest distance; W2...shortest distance.

Claims

1. A high-frequency module comprising: A mounting substrate having a first main surface and a second main surface facing each other; A first signal terminal, a second signal terminal, and a ground terminal are arranged on the second main surface of the mounting substrate; and A hybrid filter is connected between the first signal terminal and the second signal terminal, the hybrid filter including an elastic wave filter having at least one elastic wave resonator, a first inductor having a winding portion, and a first capacitor, one end of the first inductor being connected to the first signal terminal, the other end of the first inductor being connected to the elastic wave filter, and the first capacitor being connected in parallel with the first inductor. The elastic wave filter includes a plurality of external electrodes connected to the first main surface of the mounting substrate. The plurality of external electrodes include: A first input / output electrode connected to the first signal terminal; A second input-output electrode connected to the second signal terminal; and A grounding electrode connected to the above-mentioned grounding terminal, The first inductor is disposed on the first main surface of the mounting substrate and is adjacent to the elastic wave filter when viewed from above in the thickness direction of the mounting substrate. The first capacitor is formed on the mounting substrate. When viewed in the direction of the winding axis of the winding portion of the first inductor, an inner portion of the winding portion of the first inductor does not overlap with any of the first input / output electrode, the second input / output electrode, and the ground electrode.

2. The high-frequency module according to claim 1, wherein The winding axis of the winding portion of the first inductor is parallel to the thickness direction of the mounting substrate.

3. The high-frequency module according to claim 1 or 2, wherein: Also features: a second inductor, separate from the first inductor; as well as A second capacitor, separate from the first capacitor, The second inductor has a second winding portion, and the second winding portion is different from the first winding portion of the first inductor. The second capacitor is arranged on the first main surface of the mounting substrate. The second inductor is arranged on the first main surface of the mounting substrate. When viewed from the direction of the winding axis of the second winding portion of the second inductor, the inner portion of the second winding portion does not overlap with any of the first input / output electrode, the second input / output electrode, and the ground electrode. The second capacitor is located between the first inductor and the second inductor when viewed in plan from the thickness direction of the mounting substrate.

4. The high-frequency module according to claim 3, wherein: The winding axis of the second winding portion of the second inductor is perpendicular to the winding axis of the first winding portion of the first inductor.

5. The high-frequency module according to claim 1 or 2, wherein: Also features: a resin layer disposed on the first main surface of the mounting substrate and covering at least a portion of the elastic wave filter and the first inductor; and The metal electrode layer covers at least a portion of the resin layer and at least a portion of the outer peripheral surface of the mounting substrate and is connected to the ground terminal.

6. The high-frequency module according to claim 1 or 2, wherein: Also features: a third signal terminal disposed on the second main surface of the mounting substrate; and The second filter is different from the hybrid filter, ie, the first filter, and is connected between the first signal terminal and the third signal terminal.

7. The high-frequency module according to claim 6, wherein: The second filter includes a second elastic wave filter, and the second elastic wave filter is different from the elastic wave filter, that is, the first elastic wave filter. The second filter includes a plurality of second external electrodes, and the plurality of second external electrodes are different from the plurality of first external electrodes of the first filter.

8. The high-frequency module according to claim 7, wherein: The first elastic wave filter includes a first substrate. The second elastic wave filter includes a second substrate. The first substrate is shared by the second substrate.

9. The high-frequency module according to claim 6, wherein: Also features: a resin layer disposed on the first main surface of the mounting substrate and covering at least a portion of the elastic wave filter and the first inductor; and a metal electrode layer covering at least a portion of the resin layer and at least a portion of the outer peripheral surface of the mounting substrate and connected to the ground terminal; The first inductor further comprises: A first external terminal and a second external terminal connected to the first main surface of the mounting substrate; a first wiring portion connecting the first end of the winding portion and the first external terminal; and a second wiring portion connecting the second end of the winding portion and the second external terminal; In the first inductor described above, The first external terminal is connected to a common path of a first path between the first filter and the first signal terminal and a second path between the second filter and the first signal terminal. The second external terminal is connected to the elastic wave filter. The shortest distance between the first wiring portion and the metal electrode layer in the thickness direction of the mounting substrate is longer than the shortest distance between the second wiring portion and the metal electrode layer in the thickness direction of the mounting substrate.

10. The high-frequency module according to claim 6, wherein Also features: a fourth signal terminal disposed on the second main surface of the mounting substrate; and The third filter is connected between the first signal terminal and the fourth signal terminal and includes a third inductor and a third capacitor.

11. The high-frequency module according to claim 6, wherein When viewed from above in the thickness direction of the mounting substrate, the third signal terminal does not overlap with any circuit element among the plurality of circuit elements arranged on the mounting substrate. The plurality of circuit elements include the elastic wave filter, the first inductor, and the first capacitor.

12. A communication device comprising: The high-frequency module according to any one of claims 1 to 11; and The signal processing circuit is connected to the high-frequency module.

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