A novel on-chip micro vacuum sensor and its manufacturing method

Abstract

The present application discloses a novel on-chip micro vacuum sensor and its manufacturing method, which includes a substrate, an insulating material layer composed of oxide or nitride located on the surface of the substrate, and an electrode pair located partially or entirely on the insulating material layer. After the insulating material layer is soft-broken by applying voltage, an electron tunneling junction is formed inside or on the surface, and the electrode pair is in contact with the conductive area in the electron tunneling junction. The working principle of this on-chip micro vacuum sensor is that the electrode pair is used to drive the electron tunneling junction to generate a conduction current. Under the action of the driving voltage, the width of the electron tunneling junction changes dynamically with the gas pressure, and the conduction current passing through the tunneling junction decays as the gas pressure increases. Therefore, the pressure can be measured by reading the resistance value of the tunneling junction under different pressures. The pressure measurement range of this on-chip micro vacuum sensor is 0.1~10 4 Pa, with the advantages of wide measuring range, simple structure and easy processing, it can realize pressure detection in small spaces.

Description

Technical Field

[0001] The present application relates to the field of electronic science and technology, and in particular to an on-chip micro vacuum sensor based on an electron tunneling junction and a manufacturing method thereof. Background Art

[0002] Vacuum sensors are instruments that measure vacuum levels or air pressure and are widely used in various industrial equipment. While traditional vacuum sensors are well-developed, they suffer from drawbacks such as bulk, high power consumption, and heavy weight. In certain fields, such as vacuum measurement in small spaces and aerospace, there are strict restrictions on the size, weight, and power of vacuum sensors. Therefore, miniaturization and on-chip integration of vacuum sensors are crucial.

[0003] On-chip miniature vacuum sensors have been studied quite maturely. Currently, there are many on-chip miniature electronic sources such as miniaturized Pirani vacuum sensors, miniaturized thin film vacuum sensors, quartz vacuum sensors, and miniaturized ionization vacuum sensors. In applications, many different types of vacuum sensors work in sequence to measure gas pressure. For example, if measuring high vacuum, some types of thin film or thermal conductivity vacuum sensors are used to measure 10 5 to 10 1 Pa pressure, then the ionization vacuum sensor starts measuring 10 1 Gas pressure below Pa.

[0004] Although on-chip micro vacuum sensors based on various microstructures and sensing methods have been proposed, these miniaturized, on-chip vacuum sensors still have various shortcomings. The most common micro Pirani vacuum sensor measures vacuum pressure based on the thermal conductivity of the surrounding gas, which can provide high sensitivity and 0.1 to 10 5 The wide detection range of Pa. However, most miniature Pirani vacuum sensors are easily damaged when directly exposed to the test environment due to the mechanical fragility of their suspended and monolithically integrated MEMS structures. In addition, their independent micro-machined parts lack mechanical robustness and the layout design is incompatible with the design rules of many standard IC processes. For ionization vacuum sensors, on the one hand, there is a certain difficulty in miniaturization because a certain space is required for gas ionization collisions. On the other hand, ionization vacuum sensors usually use hot cathodes or field emission cathodes to provide electrons, and the problems of life and heat dissipation are difficult to solve. In addition, since Pirani and thermal ionization vacuum sensors are thermally driven, thermal effects are a key issue for their integration in CMOS circuits. For thin-film vacuum sensors, there are still problems of zero drift caused by diaphragm creep and scale limitations. Quartz crystal sensors have high accuracy but are expensive and have poor availability.

[0005] On the other hand, the complex structures and manufacturing processes of the various micro vacuum sensors mentioned above are highly unsuitable for practical mass production. For example, the suspended structures required for Pirani vacuum sensors and thermal ionization vacuum sensors require complex processes such as etching or the use of sacrificial layers. Ionization vacuum sensors typically have multiple electrodes or layers, consisting of a cathode, gate, and anode. Consequently, practical micro vacuum sensors with simple structures, low-cost manufacturing, and ease of integration are rarely reported. Summary of the Invention

[0006] In view of this, the present application provides an on-chip micro vacuum sensor and its implementation method. The vacuum sensor of the present invention is mainly composed of an electron tunneling junction with a conductive region, an insulating region, and a conductive region formed inside or on the surface of a soft-breakdown insulating material layer. Under a certain driving voltage, the resistance value of the electron tunneling junction is highly sensitive to the vacuum pressure. It has the advantages of simple structure, easy processing, low operating voltage, and integration. The detection range is ~0.1-10 4 Pa, has initially achieved the goal of on-chip and miniaturization of vacuum sensors, thereby enabling them to meet more application requirements.

[0007] In order to solve the above technical problems, this application adopts the following technical solutions:

[0008] The present application provides an on-chip micro vacuum sensor based on an electron tunneling junction, comprising:

[0009] substrate;

[0010] an insulating material layer composed of oxide or nitride located on the surface of the substrate, wherein the insulating material layer can be changed from an insulating state to a conductive state after soft breakdown by applying a voltage;

[0011] After soft breakdown of the insulating material layer by applying voltage, an electron tunneling junction is formed inside or on the surface;

[0012] The electron tunneling junction is composed of a conductive region-an insulating region-a conductive region. The electrode pair is in contact with the conductive region of the electron tunneling junction. The electrode pair is used to drive the electron tunneling junction to generate a conduction current.

[0013] Optionally, the insulating layer composed of oxide or nitride can be selected from one or more of the following materials: aluminum oxide, silicon oxide, beryllium oxide, tantalum oxide, hafnium oxide, tungsten oxide, zinc oxide, magnesium oxide, zirconium oxide, titanium oxide, nickel oxide, germanium oxide, aluminum nitride, silicon nitride, titanium nitride, and tungsten nitride.

[0014] Optionally, the electrode pair is selected from one or more of the following materials: metal, graphene, carbon nanotube or conductive two-dimensional material.

[0015] Optionally, the substrate is selected from one or more of the following materials: silicon, germanium, silicon oxide, glass, aluminum oxide, beryllium oxide, silicon nitride, aluminum nitride, silicon carbide, diamond, and ceramics.

[0016] Optionally, the electrode pair includes two opposing finger electrodes extending beyond two regional electrodes, and each of the regional electrodes includes at least one finger electrode.

[0017] The present application also provides a micro vacuum sensor system, comprising a base and the micro vacuum sensor; the base is used to provide electrical connection between the driving electrode pair and the circuit module.

[0018] Optionally, the micro vacuum sensor system further includes a circuit module; the circuit module is connected to the power connection port, and is used to provide voltage to the driving electrode pair of the micro vacuum sensor through the power connection port, regulate the voltage, and read resistance.

[0019] The present application also provides a method for manufacturing an on-chip micro vacuum sensor, comprising:

[0020] providing a substrate;

[0021] preparing an insulating material layer composed of oxide or nitride on the surface of the substrate;

[0022] forming electrode pairs or an electrode pair array partially or entirely located above the insulating material layer on the substrate, with gaps or a gap array between the electrode pairs;

[0023] A voltage is applied to the electrode pair or electrode pair array to cause a soft breakdown of the insulating material layer within the gap between the electrode pairs, thereby converting the insulating state into a conductive state.

[0024] Compared with the existing technology, this application has the following beneficial effects:

[0025] Based on the above technical solutions, the present application provides an on-chip micro vacuum sensor and a manufacturing method thereof. The on-chip micro vacuum sensor adopts a new type of electron tunneling junction structure of conductive area-insulating area-conductive area. The electrode pair is used to drive the electron tunneling junction to generate a conduction current. Under the action of the driving voltage, the width of the tunneling junction changes dynamically with the air pressure, and the conduction current through the tunneling junction decays as the air pressure increases. Therefore, the pressure can be measured by reading the resistance value of the tunneling junction under different pressures. The on-chip micro vacuum sensor based on the electron tunneling junction has the following advantages: First, it has a simple structure, is easy to process, and has a low operating voltage. It avoids the problems of large volume, complex structure, high power consumption of traditional ionized vacuum and thermal effects and structural fragility of Pirani vacuum sensors, and preliminarily realizes the on-chip and miniaturization of vacuum sensors. Second, it has a wide detection range (~0.1-10 4 Pa), making it suitable for high-pressure detection. Thirdly, its small size holds promise for detecting pressure in small spaces. Fourthly, the vacuum sensor's manufacturing process is more compatible with integrated circuit technology, enabling large-scale batch processing and low production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a working principle diagram of the on-chip micro vacuum sensor in the present invention; Figure 1 (a) is a schematic diagram of an electron tunneling junction of a conductive region-insulating region-conductive region formed after soft breakdown of an insulating material composed of one or more oxides or nitrides in an electrode gap; Figure 1 (b) is a schematic diagram of the energy band structure of the electron tunneling junction; Figure 1 (c) is a schematic diagram of the structure of the electron tunneling junction structure as the vacuum pressure changes, wherein: 210 and 211 are conductive regions, 212 is an insulating silicon oxide channel, d1, d2, and d3 are the widths of the silicon oxide channel in the electron tunneling junction as the pressure increases, and the arrows represent the electron tunneling paths. (I c )1、(I c )2、(I c )3 is the width of the silicon oxide channel in the electron tunneling junction, d1, d2, d3, and R1, R2, R3 are the conduction current and resistance value of the corresponding electron tunneling junction respectively.

[0027] Figure 2 This is a structural schematic diagram of an on-chip micro vacuum sensor based on an electron tunneling junction in Example 1 of the present application.

[0028] Figure 3 FIG. 4 is a cross-sectional view of the on-chip micro vacuum sensor along the dotted line AA′.

[0029] Figure 4This is a schematic structural diagram of an on-chip micro vacuum sensor based on an electron tunneling junction in Example 2 of the present application; Figure 4 (a) is a schematic diagram of the three-dimensional structure of the on-chip micro vacuum sensor; Figure 4 (b) is a cross-sectional view of the on-chip micro vacuum sensor along the dotted line AA'.

[0030] Figure 5 This is a schematic structural diagram of an on-chip micro vacuum sensor based on multiple types of electron tunneling junctions in Example 3 of the present application; Figure 5 (a) is a schematic diagram of the three-dimensional structure of the on-chip micro vacuum sensor; Figure 5 (b) is a cross-sectional view of the micro vacuum sensor on the chip along the dotted line AA'. Figure 5 (c) is a cross-sectional view of the on-chip micro vacuum sensor along the dotted line BB'.

[0031] Figure 6 This is a schematic structural diagram of an array-type on-chip micro vacuum sensor based on electron tunneling junctions in the fourth embodiment of the present application; Figure 6 (a) is a schematic diagram of the three-dimensional structure of the on-chip micro vacuum sensor; Figure 6 (b) is a schematic diagram of the electron tunneling junction formed between each electrode of the on-chip micro vacuum sensor; Figure 6 (c) is a cross-sectional view of the micro vacuum sensor on the chip along the dotted line AA', wherein the enlarged view of the square dotted frame is a cross-sectional view of one of the electrode gaps of the array micro vacuum sensor.

[0032] Figure 7 This is a schematic structural diagram of an on-chip micro vacuum sensor system based on an electron tunneling junction in Example 5 of the present application; Figure 7 (a) is a schematic diagram of the three-dimensional structure of the on-chip micro vacuum sensor system; Figure 7 (b) is a cross-sectional view of the on-chip micro vacuum sensor system along the dotted line AA'. DETAILED DESCRIPTION

[0033] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0034] Example 1

[0035] The on-chip micro vacuum sensor based on electron tunneling junction constructed in this embodiment includes:

[0036] Substrate 1; an insulating material layer 2 made of oxide or nitride located above substrate 1, and the first electrode 31 and the second electrode 32 of an electrode pair in contact with both sides thereof, an electron tunneling junction 21 located on the upper surface of the insulating material layer 2, the electron tunneling junction being composed of a conductive region - insulating region - conductive region formed on the surface after the insulating material layer is soft - broken down by applying a voltage, and the conductive regions 210 and 211 are respectively connected to the electrode pair 31 and 32;

[0037] The electrode pair 31 and 32 in contact with both ends of the electron tunneling junction 21 is used to provide a voltage for the vacuum sensor, drive the insulating material layer 2 to be soft - broken down into a conductive state and form an electron tunneling junction, so as to drive electron tunneling to occur in the electron tunneling junction to generate a conduction current.

[0038] The specific working principle of the on - chip micro - vacuum sensor based on an electron tunneling junction is as follows:

[0039] When a certain intensity of voltage is applied between the electrode pair 31 and 32, after the insulating material layer 2 in the gap between the electrode pair is soft - broken down, a conductive region penetrating the entire gap will be formed on its surface. After the conductive region can experience a transition from a low - resistance state to a high - resistance state under the voltage regulation of the driving electrodes (>10V), the conductive region breaks, thus forming a conductive region - insulating region - conductive region electron tunneling junction 21 on the surface or inside of the insulating material layer 2. The electron tunneling junction undergoes electron tunneling under the action of the driving voltage, thereby generating a conduction current, as Figure 1 (a) shows. Figure 1 (b) is a schematic diagram of the energy band structure of the electron tunneling junction. When a voltage is applied, electrons in the conductive region 210 with a lower electric potential tunnel through the energy barrier at the interface of the conductive region - insulating region, and the electrons entering the insulating region 212 are accelerated under the drive of the electric field and are scattered when encountering phonons or impurities in the insulator. As Figure 1 (c) shows, within a certain range of air pressure, under the action of the driving voltage, the width of the middle insulating region 212 of the electron tunneling junction changes dynamically with the air pressure. As the pressure increases (P1 < P2 < P3), the width of the insulating region 212 of the electron tunneling junction becomes wider (d1 < d2 < d3), and the corresponding resistance value of the electron tunneling junction 21 increases with the increase of the air pressure (R1 < R2 < R3), resulting in a smaller conduction current passing through the tunneling junction ((I c )1 > (I c )2 > (I c )3). Therefore, the air pressure can be detected according to the resistance value calculated from the conduction current of the tunneling junction.

[0040] As Figure 2 is a schematic three - dimensional structure diagram of an on - chip micro - vacuum sensor based on an electron tunneling junction provided in this embodiment. Figure 3For this on-chip micro vacuum sensor Figure 1 The cross-sectional view is taken along the dashed line AA'. Electrode pairs 31 and 32 are in direct contact with substrate 1, which acts as a support and thermally conductive layer, dissipating heat generated during the operation of the vacuum sensor in a timely manner, preventing local overheating and ensuring stable and long-term operation of the vacuum sensor.

[0041] Example 2

[0042] In order to simplify the processing flow, this embodiment places the electron tunneling junction and the electrode pair on different layers of the substrate surface. The electrode pair is located above the insulating material layer, the electron tunneling junction is located on the upper surface of the insulating material layer and below the electrode layer, and the insulating material layer containing the electron tunneling junction extends to the contact interface of the electrode pair, and the substrate is in contact with the insulating material layer where the electron tunneling junction is located.

[0043] The on-chip micro vacuum sensor based on electron tunneling junction constructed in this embodiment includes: a substrate 1, an insulating material layer 2 composed of oxide or nitride located on the substrate 1, an electron tunneling junction 21 located on the upper surface of the insulating material layer 2, and an electrode pair 31 and 32 located on the insulating material layer 2.

[0044] like Figure 4 (a) is a schematic diagram of the three-dimensional structure of an on-chip micro vacuum sensor based on an electron tunneling junction provided in the second embodiment. Figure 4 (b) The micro vacuum sensor on the chip Figure 1 The cross-sectional view of the AA' dotted line in the middle. The electrode pairs 31 and 32 are located on the insulating material layer 2, and the insulating material layer 2 between the electrode pairs is in contact with the electrode pairs 31 and 32 on both sides. Under voltage drive, the insulating material layer 2 between the electrode pairs will softly break down and become conductive. By regulating the voltage, the conductive area is broken to form two conductive areas 210 and 211, and an insulating gap 212 is formed between the conductive areas 210 and 211. In this way, the structure formed by the first conductive area 210, the insulator gap 212, and the second conductive area 211 in the insulating material layer 2 is an electron tunneling junction 21 of the conductive area-insulating area-conductive area. Therefore, this embodiment has the same constituent elements, positional relationship and working principle as Example 1. The electrode pairs 31 and 32 provide voltage to the electron tunneling junction to drive electron tunneling in the electron tunneling junction to generate a conduction current. The difference is that in this embodiment, the driving electrodes 31 and 32 are located above the insulating material layer 2.

[0045] Example 3

[0046] In order to realize gas pressure detection of different types of gases, such as oxygen and nitrogen, this embodiment provides an on-chip micro vacuum gauge that can detect multiple gases. It simultaneously selects multiple insulating material layers and forms different types of electron tunneling junctions on the surfaces of different insulating material layers, thereby realizing different types of gas sensing at the same time.

[0047] The on-chip micro vacuum sensor based on multiple types of electron tunneling junctions constructed in this embodiment includes: a substrate 1, an oxide insulating material layer 2 and a nitride insulating material layer 2' located on the substrate 1, electron tunneling junctions 21 and 2'1 located on the upper surfaces of the insulating material layers 2 and 2', respectively, and electrode pairs 31 and 32 located at both ends of the electron tunneling junctions 21 and 2'1 and in contact with them.

[0048] like Figure 5 (a) is a schematic diagram of the three-dimensional structure of an on-chip micro vacuum sensor based on multiple types of electron tunneling junctions provided in this embodiment. Figure 5 (b) The micro vacuum sensor on the chip Figure 1 The cross-section of the AA' dashed line, Figure 5 (c) The micro vacuum sensor on the chip Figure 1 Cross-sectional view of the dotted line BB' in the middle. The oxide insulating material layer 2 and the nitride insulating material layer 2' located on the substrate 1 are in contact with the electrode pairs 31 and 32 on both sides. Under voltage drive, the insulating material layers 2 and 2' between the electrode pairs will softly break down and become conductive. By regulating the voltage to break the conductive area, conductive areas 210, 211 and 2'10, 2'11 are formed in the insulating material layers 2 and 2' respectively, and insulating gaps 212 and 2'12 are formed between the conductive areas 210, 211 and 2'10, 2'11 respectively. In this way, different types of electron tunneling junctions 21 and 2'1 are formed in the insulating material layers 2 and 2' respectively. Therefore, this embodiment has the same constituent elements, positional relationship and working principle as the first embodiment. The driving electrodes 31 and 32 provide voltage to the electron tunneling junction to drive electron tunneling in the electron tunneling junction to generate a conduction current. The difference is that this embodiment includes multiple insulating material layers and electron tunneling junctions.

[0049] Example 4

[0050] In order to meet the conduction current of the vacuum sensor required for practical applications and improve the detection sensitivity, this embodiment provides an array-type on-chip micro vacuum sensor based on electron tunneling junctions, which is composed of a plurality of electron tunneling junction arrays given in Example 2 arranged on the substrate surface, and the conduction current is the sum of the contributions of the electron tunneling junction units in a single Example 2.

[0051] The array-type vacuum sensor based on electron tunneling junction constructed in this embodiment includes: a substrate 1; an insulating material layer 2 located on the substrate 1 and composed of oxide or nitride; a plurality of large electrode pairs 310, 320, and 330 arranged alternately on the insulating material layer 2; a plurality of extended finger-shaped small electrodes such as 311 and 321 are located between adjacent large electrode pairs 310 and 320, and the finger-shaped small electrodes on both sides are arranged in parallel in a direction perpendicular to the large electrode pairs 310 and 320 at equal intervals; the finger-shaped small electrodes extending from adjacent large electrodes correspond to each other one by one and have electrode gaps, forming a gap array on the insulating material layer 2; an array of conductive region-insulating region-conductive region electron tunneling junctions 21 composed of a conductive region 210, an insulator gap 212, and a conductive region 211 is formed in the insulating material layer 2 between the electrode gap arrays.

[0052] like Figure 6 (a) is a schematic diagram of the three-dimensional structure of an array-type micro vacuum sensor based on an electron tunneling junction provided in this example. Figure 6 (b) gives the value of each electrode gap ( Figure 6 Schematic diagram of the electron tunneling junction formed by the insulating material layer (circled part in (a)). Figure 6 (c) The vacuum sensor is along Figure 5 (a) The cross-sectional view of the AA' dashed line, Figure 6 (c) The enlarged view of the square dashed box is a cross-sectional view of one of the electrode gaps in the vacuum sensor. This embodiment shares the same components, positional relationships, and operating principles as the vacuum sensor described in Example 2, so we will not elaborate on them here. The difference is that in this embodiment, the substrate surface has multiple electron tunneling junctions arranged in an array, with adjacent two electron tunneling junctions sharing a common electrode pair.

[0053] Example 5

[0054] To meet the independent, complete, and compact requirements of micro vacuum sensor applications, accelerate heat dissipation of the vacuum sensor, maintain current stability, and achieve direct connection between the vacuum sensor and an external circuit, this embodiment provides an on-chip micro vacuum sensor system based on an electron tunneling junction. A heat sink, a circuit module, and a base are added to the original on-chip micro vacuum sensor to meet the requirements of actual applications for on-chip micro vacuum sensors.

[0055] like Figure 7 (a) is a schematic diagram of the three-dimensional structure of an on-chip micro vacuum sensor based on an electron tunneling junction provided in this example. Figure 7 (b) The vacuum sensor Figure 7(a) is a cross-sectional view of the dotted line AA'. Based on the third embodiment, this embodiment provides a heat sink 4 under the substrate 1. The heat sink 4 can quickly dissipate the heat generated by the vacuum sensor through the heat sink. The heat sink 4 is located below the substrate 1 and should be in direct and close contact with the substrate to ensure good thermal conductivity between the substrate and the heat sink. A base 5 is provided under the vacuum sensor. The base 5 is provided with components (such as terminals, pins, pinholes, etc.) that can be connected to the external circuit module. The vacuum sensor (including the substrate, heat sink, and driving electrode) is mounted on the base 5. The components (such as terminals, pins, pinholes, etc.) on the base are connected to the electrode pairs of the vacuum sensor through connecting wires 53 (such as welding wires), thereby realizing the connection between the vacuum sensor and the circuit module, which can be used on an integrated circuit chip. In order to maintain the stability of the vacuum sensor's conductive current, a circuit module is added to the on-chip micro vacuum sensor to provide voltage drive, regulation, and resistance reading for the electrode pairs. The base 5 provided at the bottom of the vacuum sensor has components 51 and 52 connected to an external circuit, and a connecting wire 53 is provided between the components and the electrode pair of the vacuum sensor. Figure 7 In (a), an external circuit module 6 is used to apply a driving voltage to the electrode pair. The circuit module 6 includes a voltage input terminal 61, a plurality of voltage output terminals 62, and a resistance reading meter 63. Each voltage output terminal 62 is connected to the components on the vacuum sensor base via a connecting line 64 (such as a wire), thereby realizing voltage driving, regulation, and resistance reading of the vacuum sensor electrode pair. This embodiment has the same constituent elements, positional relationship, and operating principle as the vacuum sensor described in Example 4, and will not be elaborated on here. The difference is that this embodiment adds a heat sink, a circuit module, and a base to the original on-chip micro vacuum sensor.

[0056] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments.

[0057] The above is only a preferred embodiment of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above-disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of protection of the technical solution of the present application.

Claims

1. An on-chip micro vacuum sensor, characterized in that: include: substrate; an insulating material layer composed of oxide or nitride located on the surface of the substrate, wherein the insulating material layer can be changed from an insulating state to a conductive state after soft breakdown by applying a voltage; an electrode pair partially or entirely located above the insulating material layer, wherein the insulating material layer is located within a gap between the electrode pairs and is soft-broken and becomes conductive; After the insulating material layer is soft-broken by the voltage applied by the electrode pair, an electron tunneling junction is formed inside or on the surface; The electrode pair is used to drive the electron tunneling junction to generate a conduction current, and the pressure is measured by reading the resistance value of the electron tunneling junction under different pressures.

2. The on-chip micro vacuum sensor according to claim 1, characterized in that The insulating material layer (2) and an electrode pair in contact with both sides of the insulating material layer (2) are provided above the substrate. The electron tunneling junction is composed of a first conductive region (210)-an insulating region (212)-a second conductive region (211). The first conductive region (210) and the second conductive region (211) are respectively connected to one electrode in the electrode pair.

3. The on-chip micro vacuum sensor according to claim 1, wherein: The insulating material layer is made of one or more of the following materials: aluminum oxide, silicon oxide, beryllium oxide, tantalum oxide, hafnium oxide, tungsten oxide, zinc oxide, magnesium oxide, zirconium oxide, titanium oxide, nickel oxide, germanium oxide, aluminum nitride, silicon nitride, titanium nitride, tungsten nitride; the electrode pair is selected from one or more of the following materials: metal, graphene, carbon nanotubes or conductive two-dimensional materials; the substrate is selected from one or more of the following materials: silicon, germanium, silicon oxide, glass, aluminum oxide, beryllium oxide, silicon nitride, aluminum nitride, silicon carbide, diamond, ceramics.

4. The on-chip micro vacuum sensor according to claim 1, wherein: The insulating material layer comprises an oxide insulating material layer and a nitride insulating material layer. After the voltage is applied to the electrode pair and the oxide insulating material layer is softly broken down, an electron tunneling junction (21) is formed inside or on the surface. After the voltage is applied to the electrode pair and the nitride insulating material layer is softly broken down, an electron tunneling junction (2'1) is formed inside or on the surface.

5. The on-chip micro vacuum sensor according to claim 1, wherein: The electrode pair includes two opposing finger electrodes extending beyond two regional electrodes, and each of the regional electrodes includes at least one finger electrode.

6. The on-chip micro vacuum sensor according to any one of claims 1 to 5, characterized in that: It also includes a circuit module for providing voltage to the electrode pair, regulating the voltage, and reading resistance.

7. The on-chip micro vacuum sensor according to claim 6, characterized in that: Also included is a base, which provides electrical connection between the electrode pair and the circuit module.

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