Plasma processing apparatus and plasma processing method using the same

Abstract

The present invention provides a plasma processing apparatus. The apparatus includes a chamber having a processing space in which plasma is generated, and a plasma generation unit for exciting a gas within the processing space into a plasma state, wherein the plasma generation unit includes a first power supply for providing power for generating the plasma, a coil portion connected to the first power supply, a first shunt capacitor connected between a first node of the coil portion and a ground supply, and a second shunt capacitor connected between a second node of the coil portion different from the first node and the ground supply.

Description

Technical Field

[0001] This invention relates to a plasma processing apparatus and a plasma processing method using the apparatus. Background Technology

[0002] In the manufacture of semiconductor devices or display devices, various plasma-utilizing processes (e.g., etching, ashing, ion implantation, cleaning, etc.) can be used. Based on the plasma generation method, plasma-utilizing substrate processing devices can be classified into CCP (Capacitively Coupled Plasma) and ICP (Inductively Coupled Plasma) types. In a CCP-type device, two electrodes are arranged facing each other within a cavity, and an electric field is generated within the cavity by applying an RF signal to either or both electrodes, thereby generating plasma. On the other hand, in an ICP-type device, one or more coils are placed within a cavity, and an electromagnetic field is induced within the cavity by applying an RF signal to the coils, thereby generating plasma. Summary of the Invention

[0003] Technical problems to be solved

[0004] The technical problem to be solved by the present invention is to provide a plasma processing device that divides a coil antenna into multiple regions and adjusts the current of the antenna by means of a parallel capacitor connected to each of the multiple regions, thereby enabling control of the plasma density for each region.

[0005] Another technical problem to be solved by the present invention is to provide a plasma processing method that divides a coil antenna into multiple regions and adjusts the current of the antenna by means of a parallel capacitor connected to each of the multiple regions, thereby enabling control of the plasma density for each region.

[0006] The technical problems of this invention are not limited to those described above. Those skilled in the art can clearly understand other technical problems not mentioned in the following description.

[0007] An aspect of the plasma processing apparatus of the present invention for solving the above-mentioned technical problems includes: a chamber having a processing space for generating plasma; and a plasma generating unit for exciting a gas in the processing space into a plasma state, wherein the plasma generating unit includes: a first power source for providing power for generating the plasma; a coil portion connected to the first power source; a first parallel capacitor connected between a first node of the coil portion and a ground power source; and a second parallel capacitor connected between a second node of the coil portion, different from the first node, and the ground power source.

[0008] The plasma processing device adjusts the current in the coil section by controlling the capacitance values ​​of the first parallel capacitor and the second parallel capacitor.

[0009] The plasma processing device controls the plasma density by adjusting the current in the coil section.

[0010] The first parallel capacitor and the second parallel capacitor are variable capacitors.

[0011] The coil section is divided into a first coil section and a second coil section connected in series with the first node as a reference, and the plasma processing device adjusts the current of the first coil section and the current of the second coil section by controlling the capacitance value of the first parallel capacitor.

[0012] The coil section further includes: a third coil section, which is connected in series with the second coil section across the second node; and the plasma processing device adjusts the current of the second coil section and the current of the third coil section by controlling the capacitance value of the second parallel capacitor.

[0013] The plasma generating unit further includes: a third parallel capacitor connected between a third node of the coil section (different from the second node) and the grounding power supply; the coil section further includes: a fourth coil section connected in series with the third coil section across the third node; and the plasma processing device adjusts the current of the third coil section and the current of the fourth coil section by controlling the capacitance value of the third parallel capacitor.

[0014] The plasma generating unit further includes: a fourth capacitor connected between a fourth node (different from the third node) and the grounding power supply; and the plasma processing device adjusting the voltage of the coil section by controlling the capacitance value of the fourth capacitor.

[0015] The coil section includes: a first coil section, one end of which is connected to the first power source and is divided into a first region and a second region; and a second coil section, disposed below the first coil section and connected to the other end of the first coil section and divided into a third region and a fourth region, wherein the first region and the third region respectively constitute one side of the first coil section and one side of the second coil section and correspond to each other, and the second region and the fourth region respectively constitute the other side of the first coil section and the other side of the second coil section and correspond to each other, wherein the other side of the first coil section is opposite to the one side of the first coil section, and the other side of the second coil section is opposite to the one side of the second coil section, and the plasma processing device adjusts the current in the first region and the current in the fourth region by controlling the capacitance value of the first parallel capacitor and the capacitance value of the third parallel capacitor.

[0016] Another aspect of the plasma processing apparatus of the present invention for solving the above-mentioned technical problems includes: a chamber having a processing space for processing a substrate; a support unit located within the processing space and for supporting the substrate; a gas supply unit for supplying gas to the processing space; and a plasma generation unit for exciting the gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply for providing power for generating plasma; a coil section connected to the first power supply; and a first parallel capacitor, a second parallel capacitor, and a third parallel capacitor, respectively connected between a first node, a second node, and a third node of the coil section and a ground power supply.

[0017] The coil section is divided into a first region, a second region, a third region, and a fourth region based on the first node, the second node, and the third node. The plasma processing device adjusts the current in the second region, the current in the third region, and the current in the fourth region by controlling the capacitance values ​​of the first parallel capacitor, the second parallel capacitor, and the third parallel capacitor.

[0018] The plasma generating unit further includes: a fourth capacitor connected between a fourth node of the coil section (different from the third node) and the grounding power supply; and the plasma processing device adjusting the voltage of the coil section by controlling the capacitance value of the fourth capacitor.

[0019] Another aspect of the plasma processing apparatus of the present invention for solving the above-mentioned technical problems includes: a chamber having a processing space for generating plasma; and a plasma generating unit for exciting a gas in the processing space into a plasma state, wherein the plasma generating unit includes: a first power source providing power for generating the plasma; a first coil portion having one end connected to the first power source and divided into a first region and a second region; a second coil portion disposed below the first coil portion and connected to the other end of the first coil portion and divided into a third region and a fourth region; and a first parallel capacitor, a second parallel capacitor, a third parallel capacitor, and a fourth parallel capacitor respectively connected between the first region, the second region, the third region, and the fourth region and a grounded power source.

[0020] The first region and the third region respectively constitute one side of the first coil portion and one side of the second coil portion and correspond to each other, and the second region and the fourth region respectively constitute the other side of the first coil portion and the other side of the second coil portion and correspond to each other, wherein the other side of the first coil portion is opposite to the one side of the first coil portion, and the other side of the second coil portion is opposite to the one side of the second coil portion.

[0021] The plasma processing device adjusts the current in the first region and the current in the fourth region by controlling the capacitance values ​​of the first parallel capacitor and the third parallel capacitor.

[0022] The plasma processing device controls the plasma density by adjusting the current in the first region and the current in the fourth region.

[0023] An aspect of the plasma processing method of the present invention for solving another technical problem mentioned above uses a plasma processing apparatus, wherein the plasma processing apparatus includes: a chamber having a processing space for processing a substrate; a support unit located within the processing space and for supporting the substrate; a gas supply unit for supplying gas to the processing space; and a plasma generation unit for exciting the gas within the processing space into a plasma state, wherein the plasma generation unit includes: a first power source for providing power for generating plasma; a coil section connected to the first power source; and a first parallel capacitor, a second parallel capacitor, and a third parallel capacitor, respectively connected between a first node, a second node, and a third node of the coil section and a ground power source, and the plasma processing method includes the step of adjusting the current of the coil section by controlling the capacitance values ​​of the first parallel capacitor, the second parallel capacitor, and the third parallel capacitor.

[0024] The coil section is divided into a first coil section, a second coil section, a third coil section, and a fourth coil section connected in series, based on the first node, the second node, and the third node. The plasma processing method includes the steps of: adjusting the current of the first coil section and the current of the second coil section by controlling the capacitance value of the first parallel capacitor; adjusting the current of the second coil section and the current of the third coil section by controlling the capacitance value of the second parallel capacitor; and adjusting the current of the third coil section and the current of the fourth coil section by controlling the capacitance value of the third parallel capacitor.

[0025] The plasma generating unit further includes a fourth capacitor connected between a fourth node (different from the third node) and the grounding power supply, and the plasma processing method further includes a step of adjusting the voltage of the coil by controlling the capacitance value of the fourth capacitor.

[0026] The plasma processing method includes the step of controlling the density of the plasma by adjusting the current in the coil.

[0027] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0028] Figure 1 This is a schematic diagram illustrating a plasma processing apparatus according to some embodiments of the present invention.

[0029] Figure 2 It is used for explanation Figure 1 A schematic diagram of the antenna of the plasma processing device.

[0030] Figure 3 It is used for explanation Figure 2 The circuit diagram of the equivalent circuit of the antenna.

[0031] Figure 4 It is shown Figure 2 A schematic diagram of the upper and lower coil sections of the antenna.

[0032] Figure 5 This is a flowchart illustrating a plasma processing method according to some embodiments of the present invention.

[0033] Explanation of reference numerals in the attached figures

[0034] 1000: Plasma processing device

[0035] 100: Chamber; 200: Support unit

[0036] 300: Gas supply unit; 400: Plasma generation unit

[0037] 10: First power supply 410: Coil section

[0038] 411: First part of the coil section 412: Second part of the coil section

[0039] 413: Third part, coil section; 414: Fourth part, coil section

[0040] C1, C2, C3: First parallel capacitor, second parallel capacitor, third parallel capacitor

[0041] C4: Fourth capacitor Detailed Implementation

[0042] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, as well as methods for achieving these advantages and features, will be explained below with reference to the accompanying drawings. Figure 1 The invention becomes clear from the detailed description of the embodiments. However, the invention is not limited to the embodiments disclosed below, but can be implemented in many different forms. These embodiments are provided only to make the disclosure of the invention complete and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0043] When an element or layer is referred to as "on" or "above" another element or layer, it includes not only that it is directly above another element or layer, but also that other layers or elements are in between. Conversely, when an element is referred to as "directly" on or directly above another element, it indicates that there are no other elements or layers in between.

[0044] Although the terms "first," "second," etc., are used to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are obviously not limited by these terms. These terms are only used to distinguish one element, constituent element, and / or part from another element, constituent element, and / or part. Therefore, the first element, first constituent element, or first part mentioned below can obviously also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0045] The terminology used in this specification is for illustrative purposes and is not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise. The terms "comprises" and / or "comprising" as used in this specification do not exclude the presence or addition of one or more other constituent elements, steps, operations, and / or components in addition to those mentioned.

[0046] Figure 1 This is a schematic diagram illustrating a plasma processing apparatus according to some embodiments of the present invention. Figure 2 It is used for explanation Figure 1 A schematic diagram of the antenna of the plasma processing device. Figure 3 It is used for explanation Figure 2 The circuit diagram of the equivalent circuit of the antenna. Figure 4 It is shown Figure 2 A schematic diagram of the upper and lower coil sections of the antenna.

[0047] First, refer to Figure 2 and Figure 3 According to some embodiments, the plasma generation unit 400 includes a first power supply 10, a coil section 410, a first parallel capacitor C1, a second parallel capacitor C2, a third parallel capacitor C3, and a fourth capacitor C4.

[0048] The first power source 10 provides electricity to generate plasma. The first power source 10 may be a high-frequency power source.

[0049] The coil section 410 is connected to the first power supply 10, and the chamber 100 (reference) Figure 1 Plasma is generated within the coil. The coil section 410 can be a coil-type antenna for generating plasma.

[0050] refer to Figure 3 The coil section 410 can be divided into multiple regions based on different points. The coil section 410 can have a first node P1 for receiving RF signals. Specifically, the coil section 410 can be divided into a first part coil section 411 and a second part coil section 412 connected in series based on the first node P1, a second part coil section 412 and a third part coil section 413 connected in series based on the second node P2, and a third part coil section 413 and a fourth part coil section 414 connected in series based on the third node P3.

[0051] On the other hand, in some embodiments, the first portion coil portion 411, the second portion coil portion 412, the third portion coil portion 413, and the fourth portion coil portion 414 of the coil portion 410 may also be referred to as the first region, the second region, the third region, and the fourth region, respectively.

[0052] The first parallel capacitor C1, the second parallel capacitor C2, the third parallel capacitor C3, and the fourth capacitor C4 are respectively connected to the first coil section 411, the second coil section 412, the third coil section 413, and the fourth coil section 414 of the coil section 410.

[0053] Specifically, the first parallel capacitor C1 is connected between the first node P1 of the coil section 410 and the ground power supply. The second parallel capacitor C2 is connected between the second node P2 (different from the first node P1) and the ground power supply. The third parallel capacitor C3 is connected between the third node P3 (different from the second node P2) and the ground power supply. The fourth capacitor C4 is connected between the fourth node P4 (different from the third node P3) and the ground power supply.

[0054] In some embodiments, the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 may be variable capacitors. The fourth capacitor C4 may be a balancing capacitor.

[0055] Specifically, the current in the first coil section 411 and the second coil section 412 can be controlled by controlling the capacitance value of the first parallel capacitor C1. The current in the second coil section 412 and the third coil section 413 can be controlled by controlling the capacitance value of the second parallel capacitor C2. The current in the third coil section 413 and the fourth coil section 414 can be controlled by controlling the capacitance value of the third parallel capacitor C3.

[0056] The fourth capacitor C4 can be used to adjust the voltage of the coil section 410. When the fourth capacitor C4 has a specific capacitance value, the voltage of the coil section 410 can be adjusted by making the voltage at the center of the coil section 410 0V. In this case, the center of the coil section 410 can be the point where the node of the second parallel capacitor C2 is 0V, and can also refer to the point where the sign of the voltage in the coil section 410 changes. The center of the coil section 410 can refer to the point where the voltage in the coil section 410 is... Figure 4 The virtual line L is used as a reference to arrange the area between the first region 411 and the third region 413 on the left and the second region 412 and the fourth region 414 on the right.

[0057] refer to Figure 2 and Figure 4The coil portion 410 includes a first coil portion 400a and a second coil portion 400b. One end of the first coil portion 400a is connected to the first power supply 10, and the first coil portion 400a is divided into a first region 411 and a second region 412. The second coil portion 400b is arranged below the first coil portion 400a, and is connected to the other end of the first coil portion 400a and is divided into a third region 413 and a fourth region 414. In this case, the first coil portion 400a can refer to the upper coil portion, and the second coil portion 400b can refer to the lower coil portion.

[0058] The first region 411 and the third region 413 can constitute one side of the first coil portion 400a and one side of the second coil portion 400b and correspond to each other. The second region 412 and the fourth region 414 can constitute the other side of the first coil portion 400a and the other side of the second coil portion 400b and correspond to each other, wherein the other side of the first coil portion 400a is opposite to one side of the first coil portion 400a, and the other side of the second coil portion 400b is opposite to one side of the second coil portion 400b. In this case, the first region 411 and the third region 413 can be... Figure 4 The virtual line L serves as a reference to form the left side of the first coil section 400a and the left side of the second coil section 400b, and the second region 412 and the fourth region 414 can be... Figure 4 The virtual line L serves as a reference, forming the right side of the first coil section 400a and the right side of the second coil section 400b. However, the position of the virtual line L is not limited to... Figure 4 The location shown.

[0059] Referring to Tables 1 and 2 below, it can be seen that the magnitudes of the currents in the first region 411, the second region 412, the third region 413, and the fourth region 414 can vary based on the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, the third parallel capacitor C3, and the fourth capacitor C4.

[0060] In other words, based on the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, the third parallel capacitor C3, and the fourth capacitor C4, the magnitudes of the currents in the first parallel capacitor C1, the second parallel capacitor C2, the third parallel capacitor C3, and the fourth capacitor C4, as measured by the fifth galvanometer A5, the sixth galvanometer A6, and the seventh galvanometer A7, can vary. As the magnitudes of the currents in the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 change, the magnitudes of the currents in the first region 411, the second region 412, the third region 413, and the fourth region 414 of the coil section 410, as measured by the first galvanometer A1, the second galvanometer A2, the third galvanometer A3, and the fourth galvanometer A4, can also vary.

[0061] Specifically, as the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 increase, the current values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 also increase, thus reducing the current value of the coil section 410.

[0062] Furthermore, as the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 decrease, the current values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 also decrease, thus allowing the current value of the coil section 410 to increase.

[0063] For example, in the case of Embodiment 1, referring to Table 1, it can be seen that the capacitance value of the first parallel capacitor C1 increases compared to the comparative example. Referring to Table 2, it can be seen that as the magnitude of the current of the first parallel capacitor C1 measured by the fifth ammeter A5 increases compared to the comparative example, the magnitude of the current in the first region 411 measured by the first ammeter A1 decreases compared to the comparative example, and the magnitude of the current in the second region 412 measured by the second ammeter A2 increases compared to the comparative example.

[0064] In Example 2, as the capacitance of the first parallel capacitor C1 is further increased compared to Example 1, the magnitude of the current in the first region 411 can be further reduced compared to Example 1. In this case, the magnitude of the current in the first region 411 can be adjusted to be smaller than the magnitude of the current in the second region 4124, the third region 4134, and the fourth region 414, thereby reducing the plasma density in the first region 411.

[0065] In Examples 3 and 4, it is known that the capacitance of the second parallel capacitor C2 increases compared to the comparative example. This indicates that the voltages of the first region 411 and the third region 413 arranged on the left and the second region 412 and the fourth region 414 arranged on the right are in a voltage-balanced state. In this case, it is known that the magnitude of the current according to the capacitance of the second parallel capacitor C2 hardly changes.

[0066] In Examples 5 and 6, it is known that the capacitance of the third parallel capacitor C3 increases compared to the comparative example. As the capacitance of the third parallel capacitor C3 increases, it is known that, unlike Examples 1 and 2, the magnitude of the current in the fourth region 414 further decreases compared to the comparative example. Therefore, the plasma density in the fourth region 414 can be reduced.

[0067] As described above, the first region 411 corresponds to the left side region of the coil section 410, and the fourth region 414 corresponds to the right side region of the coil section 410. In this case, by adjusting the capacitance values ​​of the first parallel capacitor C1 and the third parallel capacitor C3, the magnitudes of the current in the left side region and the right side region of the coil section 410 can be adjusted to the desired values. As a result, the plasma density in the left and right sides of the coil section 410 can be adjusted separately.

[0068] More specifically, refer to both Table 2 and Figure 4 The magnitude of the current in the left region and the magnitude of the current in the right region of the coil section 410 can be adjusted to be the same, or the magnitude of the current in the left region can be adjusted to be larger, or the magnitude of the current in the right region can be adjusted to be larger.

[0069] In the comparative example, the sum of the currents in the first region 411 and the third region 413, which are the left side regions of the coil section 410, is the same as the sum of the currents in the second region 412 and the fourth region 414, which are the right side regions of the coil section 410, which is 1166mA.

[0070] In Embodiment 1, the sum of the currents in the first region 411 and the third region 413, which are the left-side regions of the coil section 410, is 1169 mA, which is less than the sum of the currents in the second region 412 and the fourth region 414, which are the right-side regions of the coil section 410, at 1206 mA. In this case, the current in the right-side region of the coil section 410 can be adjusted to be relatively larger.

[0071] In Embodiment 2, the sum of the currents in the first region 411 and the third region 413, which are the left-side regions of the coil section 410, is 1183 mA, which is less than the sum of the currents in the second region 412 and the fourth region 414, which are the right-side regions of the coil section 410, which is 1418 mA. In this case, the current in the right-side region of the coil section 410 can be adjusted to be relatively larger than in Embodiment 1.

[0072] In the case of embodiment 3, the sum of the currents in the first region 411 and the third region 413, which are the left side regions of the coil section 410, is the same as the sum of the currents in the second region 412 and the fourth region 414, which are the right side regions of the coil section 410, which is 1166mA.

[0073] In the case of embodiment 4, the sum of the currents in the first region 411 and the third region 413, which are the left side regions of the coil section 410, is 1166mA, and the sum of the currents in the second region 412 and the fourth region 414, which are the right side regions of the coil section 410, is 1167mA, which are essentially the same.

[0074] In Embodiment 5, the sum of the currents in the first region 411 and the third region 413, which are the left-side regions of the coil section 410, is 1138 mA, which is greater than the sum of the currents in the second region 412 and the fourth region 414, which are the right-side regions of the coil section 410, which is 1105 mA. In this case, the magnitude of the current in the left-side region of the coil section 410 can be adjusted to be relatively larger.

[0075] In Embodiment 6, the sum of the currents in the first region 411 and the third region 413, which are the left-side regions of the coil section 410, is 1049 mA, which is greater than the sum of the currents in the second region 412 and the fourth region 414, which are the right-side regions of the coil section 410, at 921 mA. In this case, the current in the left-side region of the coil section 410 can be adjusted to be relatively larger than in Embodiment 5.

[0076] That is, by adjusting the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3, the magnitude of the current in the coil section 410 can be freely controlled for each region of the coil section 410. As a result, the plasma density of the coil section 410 can be freely controlled for each region of the coil section 410.

[0077] Table 1

[0078]

[0079]

[0080] Table 2

[0081] Comparative Example Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 First ammeter A1 581mA 564mA 472mA 581mA 581mA 567mA 522mA Second ammeter A2 585mA 605mA 711mA 585mA 585mA 570mA 526mA Third ammeter A3 585mA 605mA 711mA 585mA 586mA 571mA 527mA Fourth galvanometer A4 581mA 601mA 707mA 581mA 582mA 535mA 395mA Fifth galvanometer (A5) 4mA 40mA 239mA 4mA 4mA 4mA 4mA Sixth galvanometer (A6) 0 0 0 0 2mA 0 1mA Seventh galvanometer (A7) 4mA 4mA 5mA 4mA 4mA 36mA 132mA

[0082] Figure 5 This is a flowchart illustrating a plasma processing method according to some embodiments of the present invention. For ease of explanation, the method will be mainly described and utilized. Figures 1 to 4 The characteristics described are different.

[0083] refer to Figure 1 According to some embodiments, a plasma processing apparatus 1000 includes a chamber 100, a support unit 200, a gas supply unit 300, and a plasma generation unit 400.

[0084] The plasma generation unit 400 includes a first power supply 10 (reference) that provides electricity for generating plasma. Figure 2 The coil section 410 connected to the first power supply 10, and the first parallel capacitor C1, the second parallel capacitor C2 and the third parallel capacitor C3 respectively connected between the first node P1, the second node P2 and the third node P3 of the coil section 410 and the ground power supply.

[0085] According to some embodiments of the plasma processing apparatus, the current of the coil section 410 can be adjusted by controlling the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3.

[0086] refer to Figure 3 and Figure 5 The current of the first coil section 411 and the current of the second coil section 412 are adjusted by controlling the capacitance value of the first parallel capacitor C1 (S10).

[0087] The current of the second coil section 412 and the current of the third coil section 413 are adjusted by controlling the capacitance value of the second parallel capacitor C2 (S20).

[0088] The current of the third coil section 413 and the current of the fourth coil section 414 are adjusted by controlling the capacitance value of the third parallel capacitor C3 (S30).

[0089] The plasma generation unit 400 includes a fourth capacitor C4 connected between a fourth node P4 (different from the third node P3) and a ground power supply. The voltage of the entire coil section 410 is adjusted by controlling the capacitance value of the fourth capacitor C4 (S40).

[0090] In some embodiments, the first parallel capacitor C1, the second parallel capacitor C2, and the third parallel capacitor C3 may be variable capacitors, and the fourth capacitor C4 may be a balancing capacitor.

[0091] That is, by adjusting the capacitance values ​​of the first parallel capacitor C1, the second parallel capacitor C2, the third parallel capacitor C3, and the fourth capacitor C4, the magnitude of the current can be freely controlled for each region of the coil section 410. As a result, the plasma density can be freely controlled for each region of the coil section 410.

[0092] Figure 1 This is an exemplary cross-sectional view of a plasma processing apparatus used to illustrate some embodiments of the present invention. Figure 1 The present invention exemplarily illustrates a plasma processing apparatus that generates plasma by means of ICP (Inductively Coupled Plasma), but is not limited thereto.

[0093] refer to Figure 1 According to some embodiments of the present invention, the plasma processing apparatus 1000 can be a substrate processing apparatus that uses plasma to process a substrate W. For example, the plasma processing apparatus 1000 can perform an etching process on the substrate W. The plasma processing apparatus 1000 may include a chamber 100, a support unit 200, a gas supply unit 300, and a plasma generation unit 400.

[0094] Chamber 100 provides space for performing substrate processing processes. Chamber 100 includes a housing 110 and a sealing cover 120.

[0095] The housing 110 has an open space inside. The internal space of the housing 110 is configured as a processing space for performing substrate processing processes. The housing 110 is made of metal. The housing 110 can be made of aluminum. The housing 110 can be grounded. A vent 102 can be formed at the bottom of the housing 110 to discharge reaction byproducts generated during the process and gases remaining in the internal space of the housing 110 to the outside. Through the venting process, the internal pressure of the housing 110 is reduced to a predetermined pressure.

[0096] The sealing cap 120 covers the open interior space on the top of the housing 110. The sealing cap 120 is configured in the shape of a plate and is used to seal the interior space of the housing 110. The sealing cap 120 may include a dielectric window.

[0097] A support unit 200 is positioned inside the housing 110. The support unit 200 supports the substrate W. The support unit 200 may include an electrostatic chuck that uses electrostatic force to attract the substrate W. Alternatively, the support unit 200 may support the substrate W in various ways, such as mechanical clamping.

[0098] The support unit 200 can be positioned inside the chamber 100 and spaced upward from the bottom of the housing 110.

[0099] The gas supply unit 300 supplies process gas to the interior of the chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is located at the center of the sealing cover 120. An injection port is formed at the bottom of the gas supply nozzle 310. The injection port is located at the lower part of the sealing cover 120 and is used to supply process gas to the processing space inside the chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 330 to the gas supply nozzle 310. A valve 321 is provided on the gas supply line 320. The valve 321 opens or closes the gas supply line 320 and regulates the flow rate of the process gas supplied through the gas supply line 320.

[0100] The plasma generation unit 400 excites the process gas within the chamber 100 into a plasma state. According to one embodiment of the present invention, the plasma generation unit 400 may be configured as an ICP type.

[0101] The plasma generation unit 400 may include a high-frequency power supply 420, an antenna 410, and a power distributor 430. The high-frequency power supply 420 provides a high-frequency signal (i.e., an RF signal). The high-frequency power supply 420 may include components utilizing… Figures 1 to 4 The first power supply 10 is described. Although not specifically shown, the high-frequency power supply device 420 may also include an impedance matching system.

[0102] Antenna 410 is connected in series with high-frequency power supply device 420. Antenna 410 may be configured as a coil with multiple turns. Antenna 410 is electrically connected to high-frequency power supply device 420 to receive RF power. Power distributor 430 distributes the power supplied from high-frequency power supply device 420 to antenna 410.

[0103] Antenna 410 can be positioned opposite the substrate W. For example, antenna 410 can be located in the upper part of cavity 100. Antenna 410 can be configured in the shape of a ring. In this case, antenna 410 can be composed of multiple rings with different radii.

[0104] According to the embodiment, the antenna 410 can be arranged on the upper part of the cavity 100 or on the side of the cavity 100. As long as the antenna 410 generates plasma within the cavity 100, the position of the coil is not limited.

[0105] Antenna 410 can receive RF power from high-frequency power supply device 420 to induce a time-varying electromagnetic field in the cavity, thereby exciting the process gas supplied to the cavity 100 into plasma.

[0106] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical concept or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A plasma processing apparatus comprising: a chamber having a processing space in which a plasma is generated; and a plasma generating unit for exciting a gas within the processing space into a plasma state, wherein the plasma generating unit includes: a first power supply that supplies electric power for generating the plasma; a coil portion divided into a first partial coil portion and a second partial coil portion connected in series with a first node as a reference; a first parallel capacitor connected between the first node of the coil portion and a ground power supply; and a second parallel capacitor connected between a second node of the coil portion different from the first node and the ground power supply, wherein the first partial coil portion and the second partial coil portion connected in series are connected between the first power supply and the second node.

2. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus adjusts a current of the coil portion by controlling a capacitance value of the first parallel capacitor and a capacitance value of the second parallel capacitor.

3. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus controls a density of the plasma by adjusting the current of the coil portion.

4. The plasma processing apparatus according to claim 1, wherein the first parallel capacitor and the second parallel capacitor are variable capacitors.

5. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus adjusts a current of the first partial coil portion and a current of the second partial coil portion by controlling a capacitance value of the first parallel capacitor.

6. The plasma processing apparatus according to claim 5, wherein the coil portion further includes a third partial coil portion connected in series with the second partial coil portion across the second node, and the plasma processing apparatus adjusts a current of the second partial coil portion and a current of the third partial coil portion by controlling a capacitance value of the second parallel capacitor.

7. The plasma processing apparatus according to claim 6, wherein the plasma generating unit further includes a third parallel capacitor connected between a third node of the coil portion different from the second node and the ground power supply, the coil portion further includes a fourth partial coil portion connected in series with the third partial coil portion across the third node, and the plasma processing apparatus adjusts a current of the third partial coil portion and a current of the fourth partial coil portion by controlling a capacitance value of the third parallel capacitor.

8. The plasma processing apparatus according to claim 7, wherein the plasma generating unit further includes a fourth capacitor connected between a fourth node different from the third node and the ground power supply, and the plasma processing apparatus adjusts a voltage of the coil portion by controlling a capacitance value of the fourth capacitor, wherein the fourth partial coil portion is connected between the third node and the fourth node. ​ 9. The plasma processing apparatus according to claim 7, wherein the coil portion includes: a first coil portion connected at one end to the first power source and divided into the first partial coil portion and the second partial coil portion connected in series with reference to the first node; and a second coil portion disposed at a lower portion of the first coil portion and connected at the other end to the first coil portion with the second node interposed and divided into the third partial coil portion and the fourth partial coil portion connected in series with reference to the third node, wherein the first partial coil portion and the third partial coil portion respectively constitute one side of the first coil portion and one side of the second coil portion and correspond to each other, the second partial coil portion and the fourth partial coil portion respectively constitute the other side of the first coil portion and the other side of the second coil portion and correspond to each other, wherein the other side of the first coil portion is opposite to the one side of the first coil portion, and the other side of the second coil portion is opposite to the one side of the second coil portion, and the plasma processing apparatus adjusts the current of the first partial coil portion and the current of the fourth partial coil portion by controlling the capacitance value of the first shunt capacitor and the capacitance value of the third shunt capacitor.

10. A plasma processing apparatus comprising: a chamber having a processing space for processing a substrate; a support unit located within the processing space and for supporting the substrate; a gas supply unit for supplying a gas to the processing space; and a plasma generation unit for exciting a gas within the processing space into a plasma state, wherein the plasma generation unit includes: a first power source for supplying power for generating plasma; a coil portion divided into first, second, and third regions connected in series with reference to different first and second nodes; first, second, and third shunt capacitors connected between the different first, second, and third nodes of the coil portion and a ground power source, respectively, wherein the first, second, and third regions connected in series are connected between the first power source and the third node.

11. The plasma processing apparatus according to claim 10, wherein the coil portion further includes a fourth region connected in series with the third region with the third node interposed, and the plasma processing apparatus adjusts the current of the second region, the current of the third region, and the current of the fourth region by controlling the capacitance value of the first shunt capacitor, the capacitance value of the second shunt capacitor, and the capacitance value of the third shunt capacitor.

12. The plasma processing apparatus according to claim 11, wherein the plasma generation unit further includes a fourth capacitor connected between a fourth node of the coil portion different from the third node and the ground power source, and the plasma processing apparatus adjusts the voltage of the coil portion by controlling the capacitance value of the fourth capacitor, ​ The fourth region is connected between the third node and the fourth node.

13. A plasma processing apparatus comprising: a chamber having a processing space in which plasma is generated; and a plasma generating unit for exciting a gas in the processing space into a plasma state, wherein the plasma generating unit includes: a first power source that supplies electric power for generating the plasma; a first coil portion connected at one end to the first power source and divided into a first region and a second region; a second coil portion disposed at a lower portion of the first coil portion and connected at the other end to the first coil portion and divided into a third region and a fourth region; and a first shunt capacitor, a second shunt capacitor, a third shunt capacitor, and a fourth shunt capacitor connected between the first region, the second region, the third region, and the fourth region and a ground power source, respectively.

14. The plasma processing apparatus according to claim 13, wherein the first region and the third region respectively constitute one side of the first coil portion and one side of the second coil portion and correspond to each other, and the second region and the fourth region respectively constitute the other side of the first coil portion and the other side of the second coil portion and correspond to each other, wherein the other side of the first coil portion is opposite to the one side of the first coil portion, and the other side of the second coil portion is opposite to the one side of the second coil portion.

15. The plasma processing apparatus according to claim 13, wherein the plasma processing apparatus adjusts a current of the first region and a current of the fourth region by controlling a capacitance value of the first shunt capacitor and a capacitance value of the third shunt capacitor.

16. The plasma processing apparatus according to claim 15, wherein the plasma processing apparatus controls a density of the plasma by adjusting the current of the first region and the current of the fourth region.

17. A plasma processing method using a plasma processing apparatus, wherein, the plasma processing apparatus includes: a chamber having a processing space for processing a substrate; a support unit located in the processing space and for supporting the substrate; a gas supply unit for supplying a gas to the processing space; and a plasma generating unit for exciting a gas in the processing space into a plasma state, wherein the plasma generating unit includes: a first power source that supplies electric power for generating the plasma; a coil portion divided into a first partial coil portion, a second partial coil portion, and a third partial coil portion connected in series with different first and second nodes as reference; and a first shunt capacitor, a second shunt capacitor, and a third shunt capacitor connected between the first, second, and third nodes of the coil portion and a ground power source, respectively, and the plasma processing method includes a step of adjusting a current of the coil portion by controlling a capacitance value of the first shunt capacitor, a capacitance value of the second shunt capacitor, and a capacitance value of the third shunt capacitor, The first, second, and third partial coil sections connected in series are connected between the first power source and the third node.

18. The plasma processing method according to claim 17, wherein The coil section further includes a fourth partial coil section connected in series with the third partial coil section across the third node, and the plasma processing method includes: a step of adjusting the current of the first partial coil section and the current of the second partial coil section by controlling the capacitance value of the first shunt capacitor; a step of adjusting the current of the second partial coil section and the current of the third partial coil section by controlling the capacitance value of the second shunt capacitor; and a step of adjusting the current of the third partial coil section and the current of the fourth partial coil section by controlling the capacitance value of the third shunt capacitor.

19. The plasma processing method according to claim 18, wherein The plasma generation unit further includes a fourth capacitor connected between a fourth node different from the third node and the ground power source, wherein the fourth partial coil section is connected between the third node and the fourth node, and the plasma processing method further includes a step of adjusting the voltage of the coil section by controlling the capacitance value of the fourth capacitor.

20. The plasma processing method according to claim 17, including: a step of controlling the density of the plasma by adjusting the current of the coil section.

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