Display panel and display device

Abstract

Embodiments of the present application provide a display panel and a display device. In the display panel provided in the embodiments of the present application, a blocking structure is arranged on one side of the substrate substrate located in the blocking area, the second metal substructure in the blocking structure is located in the orthographic projection of the substrate substrate within the orthographic projection of the first metal substructure and the third metal substructure on the substrate substrate, that is, the second metal substructure is laterally recessed relative to the first metal substructure, so that the cross-sectional shape of the blocking structure is arranged as an I-shaped cross-section, thereby improving the blocking performance of the blocking structure and the reliability of the display panel. The first metal layer of the pixel structure located in the display area is arranged in the same layer as the first structure, and the materials of the two are the same, thereby simplifying the preparation process of the blocking structure, reducing the preparation difficulty of the blocking structure, and reducing the preparation cost of the display panel.

Description

[0001] This application is a divisional application of the invention patent application with application number 202110729219.5 and the invention name of "display panel, preparation method thereof and display device". TECHNICAL FIELD

[0002] The present application relates to the technical field of display, in particular, the present application relates to a display panel and a display device. BACKGROUND

[0003] With the development of display technology, more and more display products with organic light emitting display panel are favored by users. For the special-shaped organic light emitting display panel, because the shape of the light emitting area is different from the traditional rectangular light emitting area, it is necessary to set up a barrier structure to block and isolate the organic light emitting layer, cathode and other water vapor, so as to ensure the sealing property of the organic light emitting display panel.

[0004] At present, in the preparation process of the organic light emitting display panel, the barrier property of the barrier structure is low, which leads to low yield of the organic light emitting display panel. SUMMARY

[0005] The present application aims at the shortcomings of the prior art, and provides a display panel and a display device to solve the technical problem of low barrier property of the barrier structure in the organic light emitting display panel in the prior art.

[0006] In a first aspect, the embodiments of the present application provide a display panel, comprising a display area and a barrier area, the barrier area surrounds the display area, and the display panel comprises:

[0007] a substrate substrate;

[0008] a barrier structure located on one side of the substrate substrate and in the barrier area; the barrier structure comprises a first structure, the first structure comprises a first metal sub-structure, a second metal sub-structure and a third metal sub-structure which are sequentially stacked in the direction away from the substrate substrate; the second metal sub-structure is located in the first metal sub-structure and the third metal sub-structure in the orthographic projection of the substrate substrate;

[0009] a pixel structure located on one side of the substrate substrate and in the display area, the pixel structure comprising a first metal layer, which is disposed in the same layer as the first structure, and the material of the first metal layer is the same as that of the first structure.

[0010] Optionally, the boundary of the orthographic projection of the second metal sub-structure on the substrate substrate has a first set distance with the boundary of the orthographic projection of the first metal sub-structure on the substrate substrate.

[0011] Optionally, the orthographic projection of the first metal sub-structure on the substrate substrate overlaps with the orthographic projection of the third metal sub-structure on the substrate substrate.

[0012] Optionally, the barrier structure further comprises a second structure, the second structure is located on a side of the first structure away from the substrate base,

[0013] The second structure comprises a fourth metal sub-structure, a fifth metal sub-structure and a sixth metal sub-structure which are sequentially stacked in a direction away from the substrate base; the fifth metal sub-structure is located within the fourth metal sub-structure and the sixth metal sub-structure in the orthographic projection of the substrate base; and the boundary of the fifth metal sub-structure in the orthographic projection of the substrate base has a second set distance with the boundary of the fourth metal sub-structure in the orthographic projection of the substrate base.

[0014] Optionally, the fifth metal sub-structure is located within the second metal sub-structure in the orthographic projection of the substrate base.

[0015] Optionally, the sixth metal sub-structure in the orthographic projection of the substrate base overlaps with the fourth metal sub-structure in the orthographic projection of the substrate base.

[0016] Optionally, the pixel structure comprises a second metal layer which is disposed in the same layer as the second structure, and the material of the second metal layer is the same as that of the second structure.

[0017] Optionally, the display panel comprises at least one of the following:

[0018] The first metal layer comprises a first metal sub-layer, a second metal sub-layer and a third metal sub-layer which are sequentially stacked in a direction away from the substrate base; the material of the first metal sub-layer and the third metal sub-layer is the same, and the material of the second metal sub-layer is different from that of the first metal sub-layer and the third metal sub-layer; the thickness of the first metal sub-layer and the third metal sub-layer is not less than 300 microns and not more than 600 microns, and the thickness of the second metal sub-layer is not less than 6000 microns and not more than 6500 microns.

[0019] The second metal layer comprises a fourth metal sub-layer, a fifth metal sub-layer and a sixth metal sub-layer which are sequentially stacked in a direction away from the substrate base; the material of the fourth metal sub-layer and the sixth metal sub-layer is the same, and the material of the fifth metal sub-layer is different from that of the fourth metal sub-layer and the sixth metal sub-layer; the thickness of the fourth metal sub-layer and the sixth metal sub-layer is not less than 300 microns and not more than 600 microns, and the thickness of the fifth metal sub-layer is not less than 6000 microns and not more than 6500 microns.

[0020] Optionally, the first set distance and the second set distance are both not less than 0.3 microns and not more than 0.5 microns.

[0021] Optionally, the barrier region is provided with at least two barrier structures, and the distance between any two adjacent barrier structures is not less than 8 microns and not more than 15 microns.

[0022] Optionally, the fifth metal sub-structure is located within the second metal sub-structure in the orthographic projection of the substrate.

[0023] Optionally, the second metal sub-structure overlaps the fifth metal sub-structure in the orthographic projection of the substrate.

[0024] Optionally, the display panel further comprises:

[0025] The first passivation structure is arranged on a side of the third metal sub-structure away from the substrate; the orthographic projection of the first passivation structure on the substrate covers the orthographic projection of the third metal sub-structure on the substrate.

[0026] The second passivation structure is arranged on a side of the sixth metal sub-structure away from the substrate; the orthographic projection of the second passivation structure on the substrate covers the orthographic projection of the sixth metal sub-structure on the substrate.

[0027] Optionally, the display panel further comprises: an organic light-emitting layer arranged on a side of the second passivation structure away from the substrate.

[0028] In a second aspect, an embodiment of the present application provides a display device, comprising: the display panel provided in the first aspect.

[0029] The technical scheme provided by the embodiments of the present application has the beneficial technical effects including:

[0030] In the display panel provided in the embodiments of the present application, the blocking structure is arranged on a side of the substrate located in the blocking area, the orthographic projection of the second metal sub-structure in the blocking structure on the substrate is located within the orthographic projection of the first metal sub-structure and the third metal sub-structure on the substrate, that is, the second metal sub-structure is laterally recessed relative to the first metal sub-structure, so that the cross-sectional shape of the blocking structure is set as an I-shaped cross-section, thereby improving the blocking performance of the blocking structure and improving the reliability of the display panel.

[0031] Moreover, the first metal layer of the pixel structure located in the display area is arranged in the same layer as the first structure and has the same material as the first structure, thereby simplifying the preparation process of the blocking structure, reducing the preparation difficulty of the blocking structure, and reducing the preparation cost of the display panel.

[0032] Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following and / or can be learned by practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0033] The above and / or additional aspects and advantages of the application will become apparent and be well understood from the following description, taken in conjunction with the drawings, wherein:

[0034] Figure 1 A schematic flowchart illustrating a method for manufacturing a display panel according to an embodiment of this application;

[0035] Figure 2 A schematic flowchart illustrating another method for manufacturing a display panel provided in this application embodiment;

[0036] Figure 3 A schematic diagram of the structure after a photoresist structure is fabricated on the side of the second passivation layer away from the substrate.

[0037] Figure 4 A schematic diagram showing that a blocking portion is formed at the ends of the second metal structure and the first metal structure;

[0038] Figure 5 This is a schematic diagram of the structure obtained after stripping away the blocking part and the photoresist structure;

[0039] Figure 6 A schematic diagram of the structure obtained by etching the second metal structure and the first metal structure to obtain a barrier structure;

[0040] Figure 7 Provided for the embodiments of this application Figure 6 A top view of the structure shown;

[0041] Figure 8 A schematic diagram of the structure obtained by etching the second metal structure and the first metal structure to obtain another barrier structure;

[0042] Figure 9 This is a schematic diagram showing the process after peeling off the photoresist layer on the side of the substrate located in the display area and fabricating the pixel definition structure and organic light-emitting layer;

[0043] Figure 10 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0044] Figure 11 This is a schematic diagram of another display panel structure provided in an embodiment of this application;

[0045] Figure 12 This is a schematic diagram of the structure of another display panel provided in an embodiment of this application.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10 - Substrate;

[0048] 20 - Barrier structure; 21 - First structure of barrier structure; 211 - First metal substructure; 212 - Second metal substructure; 213 - Third metal substructure; 22 - Second structure of barrier structure 20; 221 - Fourth metal substructure; 222 - Fifth metal substructure; 223 - Sixth metal substructure;

[0049] 30 - first passivation structure;

[0050] 40 - second passivation structure;

[0051] 60 - blocking portion;

[0052] 101 - buffer layer;

[0053] 102 - first gate insulating layer;

[0054] 103 - second gate insulating layer;

[0055] 104 - active layer;

[0056] 105 - first gate layer;

[0057] 106 - interlayer insulating layer;

[0058] 107 - first metal layer; 1071 - first metal structure;

[0059] 108 - first planarization layer;

[0060] 109 - first passivation layer;

[0061] 110 - second metal layer; 1101 - second metal structure;

[0062] 111 - second passivation layer;

[0063] 112 - second planarization layer;

[0064] 113 - anode layer;

[0065] 114 - photoresist layer; 1141 - photoresist structure;

[0066] 115 - second gate layer;

[0067] 116 - pixel definition structure;

[0068] 117 - organic light emitting layer;

[0069] 201 - display area; 202 - barrier area. DETAILED DESCRIPTION

[0070] The present application is described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar components or components having the same or similar functions throughout. Also, if a detailed description of known technology is deemed unnecessary for the features of the present application shown, it is omitted. The embodiments described below by reference to the accompanying drawings are exemplary and are for the purpose of explanation only, and are not to be construed as limiting the present application.

[0071] Those of skill in the art will understand that the herein-enunciated terms, unless otherwise defined, are to be interpreted as having the same ordinary and customary meaning as would be understood by one of ordinary skill in the art to which this application pertains. It is further to be understood that terms such as those defined in a general dictionary are to be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and are not to be interpreted in an idealized or overly formal sense unless specifically defined as such herein.

[0072] Those of skill in the art will understand that the singular forms "a," "an," and "the" include plural referents unless expressly stated otherwise. It will be further understood that the terms "includes" and / or "comprising," when used in the specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It will be understood that when an element is referred to as being "connected" to or "coupled" to another element, it can be directly connected to or coupled to the other element or intervening elements can be present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0073] The inventors of the present application have found that, for a special-shaped organic light-emitting display panel, due to the shape of the light-emitting area being different from the traditional rectangular light-emitting area, a barrier structure needs to be provided to block and isolate the organic light-emitting layer, the cathode, and the like, so as to ensure the sealing property of the organic light-emitting display panel. At present, the cross-sectional shape of the barrier structure is mostly an H-shaped structure. In the preparation process of the organic light-emitting display panel, an etching process is needed to form the H-shaped barrier structure by using the difference in etching rate of different metal materials to the etching liquid. However, in the preparation process of the barrier structure, two blocking parts are easily generated as by-products of the barrier structure, which makes it difficult for the etching liquid to directly contact the metal material of the barrier structure, resulting in a low formation rate of the H-shaped barrier structure, and further resulting in a low yield of the organic light-emitting display panel.

[0074] Moreover, the side of the existing H-shaped barrier structure away from the substrate is usually a single-layer metal structure, and in the subsequent preparation process of the organic light-emitting display panel, the single-layer metal structure is prone to problems such as fracture and collapse, which causes the H-shaped barrier structure to lose the blocking effect, further reducing the formation rate of the H-shaped barrier structure.

[0075] The display panel and the preparation method thereof and the display device provided by the present application are aimed at solving the above technical problems of the prior art.

[0076] The technical solutions of the present application and how the technical solutions of the present application solve the above technical problems will be described in detail below with specific examples.

[0077] The embodiment of the present application provides a preparation method of a display panel, a flowchart of the preparation method is as shown in the figure Figure 1 The preparation method comprises steps S101-S105.

[0078] S101, a first metal layer 107 and a first passivation layer 109 are prepared in sequence on one side of a substrate 10 located in a blocking area 202.

[0079] S102, a photoresist structure 1141 is prepared on the side of the first passivation layer 109 away from the substrate 10.

[0080] S103, the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141, a first passivation structure and a first metal structure are obtained, and an end portion of the first metal structure is formed with a blocking portion.

[0081] S104, the blocking portion 60 and the photoresist structure 1141 are peeled off.

[0082] S105, the first metal structure is etched to obtain a first structure 21 of the blocking structure 20, so that the first structure 21, the second metal sub-structure 212 in the substrate 10, is located in the first metal sub-structure 211 and the third metal sub-structure 213 in the substrate 10; the first metal sub-structure 211, the second metal sub-structure 212 and the third metal sub-structure 213 are stacked.

[0083] In the preparation method of the display panel provided by the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, the blocking portion 60 formed at the end portion of the first metal structure 1071 is peeled off in time, which can avoid the influence of the blocking portion 60 on the subsequent etching process of the first metal structure 1071, so as to ensure that the first structure 21, the second metal sub-structure 212 in the substrate 10, is located in the first metal sub-structure 211 and the third metal sub-structure 213 in the substrate 10, thereby ensuring the formation rate of the first structure 21, and further ensuring the formation rate of the blocking structure 20, and ensuring the yield of the organic light-emitting display panel.

[0084] Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the third metal sub-structure 213 of the first structure 21 formed is formed with the first passivation structure 30 on the side away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal sub-structure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal sub-structure 213, thereby ensuring the reliability of the blocking structure 20 and the formation rate of the blocking structure 20.

[0085] In one embodiment of the present application, the step S105 specifically comprises: etching the first metal sub-layer, the second metal sub-layer and the third metal sub-layer of the first metal structure to form the first metal sub-structure 211, the second metal sub-structure 212 and the third metal sub-structure 213 of the first structure 21, until the boundary of the orthographic projection of the second metal sub-structure 212 on the substrate 10 has the first set distance d1 from the boundary of the orthographic projection of the first metal sub-structure 211 and the third metal sub-structure 213 on the substrate 10.

[0086] In the embodiments of the present application, by limiting the boundary of the orthographic projection of the second metal sub-structure 212 on the substrate 10 to have the first set distance d1 from the boundary of the orthographic projection of the first metal sub-structure 211 and the third metal sub-structure 213 on the substrate 10, the prepared barrier structure meets the requirements to guarantee the performance of the barrier structure, so as to further guarantee the formation rate of the barrier structure and the yield of the organic light-emitting display panel.

[0087] It should be noted that, as shown in Figure 10 and Figure 11 , the first set distance d1 refers to the distance between the boundary of the orthographic projection of the second metal sub-structure 212 on the substrate 10 and the boundary of the orthographic projection of the first metal sub-structure 211 and the third metal sub-structure 213 on the substrate 10 in the direction of the display area 201 to the barrier area 202.

[0088] The embodiments of the present application provide another preparation method of a display panel, and a flowchart of the preparation method is shown in Figure 2 , which comprises steps S201-S205:

[0089] S201, sequentially preparing the first metal layer 107 and the first passivation layer 109 on one side of the substrate 10 in the barrier area 202.

[0090] In some possible implementation manners, the first metal layer 107 and the first passivation layer 109 are sequentially prepared on one side of the substrate 10 in the barrier area 202. Optionally, the first metal layer 107 comprises at least three metal sub-layers which are stacked and made of different metal materials, and the barrier structure 20 in the shape of an I-beam is formed by using the difference in etching rate of the etching liquid for different metal materials in the subsequent preparation process. Optionally, in the embodiments of the present application, the first metal layer 107 comprises three metal sub-layers which are stacked, and the etching rate of the metal sub-layer sandwiched between the upper and lower metal sub-layers is greater than the etching rate of the upper and lower metal sub-layers. Optionally, the upper and lower metal sub-layers are made of Ti (titanium), and the metal sub-layer sandwiched between the upper and lower metal sub-layers is made of Al (aluminum).

[0091] In some possible implementation manners, the first metal layer 107 and the first passivation layer 109 can be prepared simultaneously with the related film layers of the pixel structure in the display area 201. In this way, the preparation process of the barrier structure 20 can be simplified, the preparation difficulty of the barrier structure 20 can be reduced, and the preparation cost of the barrier structure 20 can be reduced, thereby reducing the preparation cost of the display panel. Alternatively, in the embodiment of the present application, the first metal layer 107 in the barrier area 202 and the first metal layer 107 in the display area 201 are prepared simultaneously, and the first passivation layer 109 in the barrier area 202 and the first passivation layer 109 in the display area 201 are prepared simultaneously.

[0092] Alternatively, before the first metal layer 107 and the first passivation layer 109 are prepared in sequence on the side of the substrate 10 in the barrier area 202, the method further includes: preparing an interlayer insulating layer 106 on the side of the substrate 10 in the barrier area 202, the interlayer insulating layer 106 in the barrier area 202 and the interlayer insulating layer 106 in the display area 201 are prepared simultaneously. Then, the first metal layer 107 and the first passivation layer 109 are prepared in sequence on the side of the interlayer insulating layer 106 away from the substrate 10.

[0093] S202, the second metal layer 110 and the second passivation layer 111 are prepared in sequence on the side of the first passivation layer 109 away from the substrate 10.

[0094] In some possible implementation manners, the second metal layer 110 and the second passivation layer 111 are prepared in sequence on the side of the first passivation layer 109 away from the substrate 10. Alternatively, the second metal layer 110 includes at least three metal sub-layers stacked in layers, and the metal sub-layers are made of different metal materials, and in the subsequent preparation process, the barrier structure 20 in the shape of an I-beam is formed by using the difference in etching rate of the etching liquid for different metal materials. Alternatively, in the embodiment of the present application, the second metal layer 110 includes three metal sub-layers stacked in layers, and the etching rate of the metal sub-layer sandwiched between the upper and lower metal sub-layers is greater than the etching rate of the upper and lower metal sub-layers. Alternatively, the upper and lower metal sub-layers are made of Ti (titanium), and the metal sub-layer sandwiched between the upper and lower metal sub-layers is made of Al (aluminum).

[0095] In some possible implementation manners, the second metal layer 110 and the second passivation layer 111 can be prepared simultaneously with the related film layers of the pixel structure in the display area 201. In this way, the preparation process of the barrier structure 20 can be further simplified, and the preparation difficulty and cost of the barrier structure 20 can be further reduced, thereby further reducing the preparation cost of the display panel. Alternatively, in the embodiment of the present application, the second metal layer 110 in the barrier area 202 and the second metal layer 110 in the display area 201 are prepared simultaneously, and the second passivation layer 111 in the barrier area 202 and the second passivation layer 111 in the display area 201 are prepared simultaneously.

[0096] S203, a photoresist structure 1141 is prepared on the side of the second passivation layer 111 away from the substrate 10.

[0097] In some possible implementation manners, the photoresist structure 1141 is prepared on the side of the second passivation layer 111 in the barrier area 202 away from the substrate 10, as shown in FIG. 1C. Figure 3 Alternatively, the photoresist layer 114 used to prepare the photoresist structure 1141 can be prepared simultaneously with the photoresist layer 114 of the pixel structure in the display area 201. In the embodiment of the present application, two photoresist structures 1141 are prepared on the side of the second passivation layer 111 away from the substrate 10.

[0098] It should be noted that, as shown in FIG. 1C, the area used to prepare the pixel structure is the display area 201, and the area used to prepare the barrier structure 20 is the barrier area 202. Figure 3

[0099] S204, the second passivation layer 111, the second metal layer 110, the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141, to obtain the second passivation structure 40, the second metal structure 1101, the first passivation structure 30 and the first metal structure 1071, and the end of the second metal structure 1101 and the end of the first metal structure 1071 are formed with the blocking part 60.

[0100] In some possible implementation manners, the second passivation layer 111, the second metal layer 110, the first passivation layer 109 and the first metal layer 107 are patterned based on the two photoresist structures 1141, to obtain two second passivation structures 40, two second metal structures 1101, two first passivation structures 30 and two first metal structures 1071, and the end of the two second metal structures 1101 and the end of the two first metal structures 1071 are formed with the blocking part 60, as shown in FIG. 1D. Figure 4

[0101] ​​Optionally, based on the two photoresist structures 1141, the second passivation layer 111 is dry etched using a combined atmosphere of CF4(carbon tetrafluoride) and O2(oxygen), so that the second passivation layer 111 is patterned to form the second passivation structure 40; the second metal layer 110 is continuously dry etched using a combined atmosphere of BCl3(boron trichloride) and Cl2(chlorine), so that the second metal layer 110 is patterned to form the second metal structure 1101, and during the dry etching process, the blocking portion 60 is formed at the two ends of the second metal structure 1101. The first passivation layer 109 is dry etched using a combined atmosphere of CF4(carbon tetrafluoride) and O2(oxygen), so that the first passivation layer 109 is patterned to form the first passivation structure 30; the first metal layer 107 is continuously dry etched using a combined atmosphere of BCl3(boron trichloride) and Cl2(chlorine), so that the first metal layer 107 is patterned to form the first metal structure 1071, and during the dry etching process, the blocking portion 60 is formed at the two ends of the first metal structure 1071.

[0102] It should be noted that, in the preparation process of the display panel, the first metal layer 107 located in the blocking area 202 and the first metal layer 107 located in the display area 201 are prepared at the same time, and the first metal layer 107 located in the display area 201 is processed by the patterning process. Therefore, the first metal layer 107 located in the display area 201 can be patterned at the same time as the first metal layer 107 located in the blocking area 202, so that the process step of patterning the first metal layer 107 based on the photoresist structure 1141 in step S204 can be omitted. The preparation process of the blocking structure 20 can be further simplified, the preparation difficulty of the blocking structure 20 can be further reduced, and the preparation cost of the blocking structure 20 can be further reduced, thereby further reducing the preparation cost of the display panel.

[0103] Optionally, the thickness of the photoresist structure 1141 is not less than 1.5 microns and not greater than 1.8 microns.

[0104] S205, stripping the blocking portion 60 and the photoresist structure 1141.

[0105] In some possible embodiments, the blocking portion 60 located at the two ends of the second metal structure 1101, the blocking portion 60 located at the two ends of the first metal structure 1071, and the photoresist structure 1141 located on the side of the second passivation layer 111 away from the substrate 10 are stripped by a wet stripping process, to obtain a structure as shown in FIG. 11B. Figure 5

[0106] ​S206, etching the first metal structure 1071 and the second metal structure 1101 to obtain the first structure 21 and the second structure 22 of the barrier structure 20 respectively, so that the fifth metal sub-structure 222 in the second structure 22 is located within the fourth metal sub-structure 221 and the sixth metal sub-structure 223 in the orthographic projection of the substrate 10; and so that the second metal sub-structure 212 in the first structure 21 is located within the first metal sub-structure 211 and the third metal sub-structure 213 in the orthographic projection of the substrate 10.

[0107] Optionally, the fourth metal sub-structure 221, the fifth metal sub-structure 222 and the sixth metal sub-structure 223 are stacked.

[0108] In some possible embodiments, the etching liquid is used for etching treatment Figure 5 As shown in the structure, due to the difference in etching rate of the metal materials in the second metal structure 1101 to the etching liquid, the fifth metal sub-structure 222 in the second structure 22 is located within the fourth metal sub-structure 221 and the sixth metal sub-structure 223 in the orthographic projection of the substrate 10, that is, the end of the fifth metal sub-structure 222 is recessed relative to the fourth metal sub-structure 221 and the sixth metal sub-structure 223.

[0109] Similarly, the second metal sub-structure 212 in the first structure 21 is located within the first metal sub-structure 211 and the third metal sub-structure 213 in the orthographic projection of the substrate 10, that is, the end of the second metal sub-structure 212 is recessed relative to the first metal sub-structure 211 and the third metal sub-structure 213, as shown in the structure. Figure 6

[0110] In the embodiments of the present application, the etching liquid includes CH3COOH, HNO3 and H3PO4, and the content of CH3COOH is not less than 10% and not more than 20%; the content of HNO3 is not less than 1% and not more than 2.5%; and the content of H3PO4 is not less than 50% and not more than 60%.

[0111] Optionally, Figure 6 As shown in the structure, the barrier region 202 of the display panel is provided with two barrier structures 20, and each barrier structure 20 includes two I-shaped structures stacked in up and down directions, so that the barrier structure 20 is a double I-shaped structure, thereby improving the barrier performance of the barrier structure 20 and improving the reliability of the display panel.

[0112] Optionally, as shown in the structure, Figure 7 ​As shown, the display panel includes a display area 201 and a barrier area 202 surrounding the display area 201, and two barrier structures 20 are arranged in the barrier area 202. It should be noted that in the embodiment of the present application, the second metal sub-structure 212 is overlapped with the fifth metal sub-structure 222 in the orthographic projection of the substrate 10, and therefore, Figure 7 In the embodiment of the present application, only two dotted lines are used to represent the second metal sub-structure 212 and the fifth metal sub-structure 222.

[0113] In the embodiment of the present application, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the third metal sub-structure 213 of the first structure 21 is formed with the first passivation structure 30 on the side away from the substrate 10, which can enhance the rigidity of the third metal sub-structure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal sub-structure 213; similarly, the sixth metal sub-structure 223 of the second structure 22 is formed with the second passivation structure 40 on the side away from the substrate 10, which can enhance the rigidity of the sixth metal sub-structure 223, thereby reducing the probability of problems such as fracture and collapse of the sixth metal sub-structure 223, so as to guarantee the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.

[0114] In an embodiment of the present application, the second structure 22 of the barrier structure 20 obtained by etching the second metal structure 1101 is such that the orthographic projection of the fifth metal sub-structure 222 in the second structure 22 is located within the orthographic projection of the fourth metal sub-structure 221 and the sixth metal sub-structure 223 on the substrate 10; the fourth metal sub-structure 221, the fifth metal sub-structure 222 and the sixth metal sub-structure 223 are stacked, and include:

[0115] The fourth metal sub-layer, the fifth metal sub-layer and the sixth metal sub-layer of the second metal structure 1101 are etched to form the fourth metal sub-structure 221, the fifth metal sub-structure 222 and the sixth metal sub-structure 223 of the second structure 22, until the boundary of the orthographic projection of the fifth metal sub-structure 222 has a second set distance d2 from the boundary of the orthographic projection of the fourth metal sub-structure 221 and the sixth metal sub-structure 223 on the substrate 10.

[0116] In the embodiment of the present application, by limiting the boundary of the orthographic projection of the fifth metal sub-structure 222 to have the second set distance d2 from the boundary of the orthographic projection of the fourth metal sub-structure 221 and the sixth metal sub-structure 223 on the substrate 10, the prepared barrier structure 20 meets the requirements, so as to guarantee the performance of the barrier structure 20, thereby further guaranteeing the formation rate of the barrier structure 20 and the yield of the organic light-emitting display panel.

[0117] In the embodiments of the present application, as shown in Figure 11 The second set distance d2 refers to the distance between the boundary of the orthographic projection of the fifth metal sub-structure 222 and the boundary of the orthographic projection of the fourth metal sub-structure 221 and the sixth metal sub-structure 223 in the direction of the display area 201 pointing to the barrier area 202.

[0118] It should be noted that in the direction perpendicular to the substrate 10, due to the difference in the height of the first metal structure 1071 and the second metal structure 1101, in the process of wet etching, the flow rate of the etching liquid contacting the second metal structure 1101 above the first metal structure 1071 is faster in the process of the etching liquid flowing from top to bottom, and thus the etching degree of the second metal structure 1101 is greater than that of the first metal structure 1071. Thus, the second set distance d2 in the second structure 22 formed is greater than the first set distance d1 in the first structure 21, as shown in Figure 8 .

[0119] In an embodiment of the present application, a photoresist structure 1141 is prepared on the side of the first passivation layer 109 away from the substrate 10, comprising:

[0120] A photoresist layer 114 is prepared on the side of the first passivation layer 109 away from the substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure on the side of the substrate 10 in the display area 201; the photoresist layer 114 is patterned, so that the part of the photoresist layer 114 in the barrier area 202 forms the photoresist structure 1141.

[0121] Optionally, a photoresist layer 114 is prepared on the side of the second passivation layer 111 away from the substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure on the side of the substrate 10 in the display area 201, specifically, so that the photoresist layer 114 covers the anode layer 113, the second passivation layer 111 and the end of each film layer of the quasi-pixel structure, thereby avoiding the preparation process of the barrier structure 20 from affecting the quasi-pixel structure; the photoresist layer 114 is patterned, so that the part of the photoresist layer 114 in the barrier area 202 forms the photoresist structure 1141.

[0122] In some possible implementations, as shown in Figures 3-9As shown, the quasi-pixel structure on the side of the display area 201 of the substrate 10 includes: an active layer 104, a first gate layer 105, an interlayer insulating layer 106, a first metal layer 107, a first planarization layer 108, a first passivation layer 109, a second metal layer 110, a second passivation layer 111, a second planarization layer 112, an anode layer 113, a photoresist layer 114, and a second gate layer 115 located on the side of the second gate insulating layer 103 away from the substrate 10. The side of the substrate 10 is also provided with a buffer layer 101, a first gate insulating layer 102, and a second gate insulating layer 103.

[0123] Optionally, the quasi-pixel structure on the side of the display area 201 is used to form a pixel structure in a subsequent display panel.

[0124] In some possible embodiments, the preparation process of the quasi-pixel structure on the side of the display area 201 of the substrate 10 includes:

[0125] A buffer layer 101 is deposited on the side of the substrate 10, and the preparation material of the buffer layer 101 includes silicon nitride, silicon oxide, etc., wherein the thickness of the silicon nitride is not less than 0.3 microns and not more than 0.7 microns, and the thickness of the silicon oxide is not less than 1 micron and not more than 1.2 microns. An active layer 104 is deposited on the side of the display area 201 of the buffer layer 101, the preparation material of the active layer 104 is amorphous silicon, the thickness of the active layer 104 is 0.05 microns, and the active layer 104 is subjected to dehydrogenation treatment, the temperature of the dehydrogenation treatment is not less than 300 DEG C and not more than 350 DEG C; then the active layer 104 is subjected to ELA (Excimer Laser Annealing) treatment, so that part of the amorphous silicon in the active layer 104 is converted into polycrystalline silicon; then the active layer 104 is subjected to dry etching, specifically, a combination atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) is used to dry etch the active layer 104, then the active layer 104 is patterned after wet stripping, a non-capacitive region mask is formed, and ion implantation is performed to dope the polycrystalline silicon in the capacitive region to be conductive, and phosphine or borane can be used for doping.

[0126] A first gate insulating layer 102 is deposited on the side of the patterned active layer 104, and the preparation material of the first gate insulating layer 102 includes silicon nitride and silicon oxide, the thickness of the silicon nitride is not less than 0.05 microns and not more than 0.09 microns, and the thickness of the silicon oxide is not less than 0.03 microns and not more than 0.06 microns.

[0127] Depositing and preparing a gate metal layer on one side of the first gate insulating layer 102, and then patterning the gate metal layer, specifically, using a combined atmosphere of SF6(sulfur hexafluoride) and O2(oxygen) to dry-etch the gate metal layer to complete the patterning of the gate metal layer; or, using a combined atmosphere of high flow rate of CF4(carbon tetrafluoride) and low flow rate of O2(oxygen), optionally, the flow rate of CF4is 2000-2500sccm (Standard Cubic Centimeter per Minute), the flow rate of O2(oxygen) is 1000-1500sccm, both the flow rate of CF4and the flow rate of O2include the end values of the respective value ranges. The patterning of the gate metal layer is completed to deposit and prepare the first gate layer 105 on one side of the display area 201, the material of the first gate layer 105 includes molybdenum, and the thickness of the first gate layer 105 is not less than 0.25 microns and not more than 0.3 microns.

[0128] Depositing and preparing a second gate insulating layer 103 on one side of the first gate layer 105, and then using the same preparation process as that of the first gate layer 105 to prepare a second gate layer 115 on one side of the second gate insulating layer 103.

[0129] Depositing and preparing an interlayer insulating layer 106 on one side of the second gate layer 115, optionally, the material of the interlayer insulating layer 106 includes silicon nitride and silicon oxide, the thickness of the silicon nitride is not less than 0.2 microns and not more than 0.3 microns, and the thickness of the silicon oxide is not less than 0.2 microns and not more than 0.5 microns. Then, a via hole is formed by a photolithography process to expose at least part of the active layer 104, specifically, a combined atmosphere of CF4(carbon tetrafluoride) and O2(oxygen) is used to dry-etch the interlayer insulating layer 106, the second gate insulating layer 103 and the first gate insulating layer 102 to form the via hole to expose at least part of the active layer 104.

[0130] Depositing and preparing a first metal layer 107 on one side of the interlayer insulating layer 106, in the embodiment of the application, the first metal layer 107 is a Ti (titanium) / Al (aluminum) / Ti (titanium) film layer structure, the thickness of Ti (titanium) is not less than 300 microns and not more than 600 microns, and the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, BCl3(boron trichloride) and Cl2(chlorine) are used to dry-etch the first metal layer 107 to achieve the patterning of the first metal layer 107.

[0131] A first planarization layer 108 is prepared on one side of the first metal layer 107 by coating, exposure, development, post-baking and other processes, and the thickness of the first planarization layer 108 is not less than 1.5 microns and not more than 2 microns. Then, a via hole is opened in the part of the first planarization layer 108 corresponding to the source region of the active layer 104. A first passivation layer 109 is deposited on one side of the first planarization layer 108, the material of the first passivation layer 109 includes silicon nitride, and then a via hole is formed in the area of the first passivation layer 109 corresponding to the via hole of the first planarization layer 108 by dry etching.

[0132] A second metal layer 110 is deposited on one side of the interlayer insulating layer 106, in the embodiment of the present application, the second metal layer 110 is a Ti (titanium) / Al (aluminum) / Ti (titanium) film layer structure, the thickness of Ti (titanium) is not less than 300 microns and not more than 600 microns, and the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, the second metal layer 110 is dry etched by using a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine) to realize the patterning of the second metal layer 110.

[0133] A second passivation layer 111 is prepared on one side of the second metal layer 110, and the material of the second passivation layer 111 includes silicon nitride. A second planarization layer 112 is prepared on one side of the second passivation layer 111 by coating, exposure, development, post-baking and other processes, and the thickness of the second planarization layer 112 is not less than 1.5 microns and not more than 2 microns. Then, a via hole is opened in the part of the second planarization layer 112 corresponding to the source region of the active layer 104.

[0134] An anode layer 113 is prepared on one side of the second planarization layer 112, so that at least part of the anode layer 113 is connected to the first metal layer 107 through the via hole. Then, a photoresist layer 114 is prepared on one side of the anode layer 113, so that the photoresist layer 114 covers the anode layer 113, the second passivation layer 111 and the end of each film layer of the sub-pixel structure of the barrier structure 20, thereby avoiding the preparation process of the barrier structure 20 from affecting the sub-pixel structure.

[0135] After the barrier structure 20 located in the barrier region 202 is prepared, the photoresist layer 114 located in the display region 201 is peeled off, and then a pixel definition structure 116 is prepared on one side of the anode layer 113 by coating, exposure, development, post-baking and other processes. As shown in FIG. 6, due to the barrier of the barrier structure 20, the organic light-emitting layer 117 is blocked. In the embodiment of the present application, the thickness of the pixel definition structure 116 is not less than 1.4 microns and not more than 1.8 microns. Figure 9

[0136] ​Based on the same inventive concept, the embodiment of the present application provides a display panel, comprising a display area 201 and a barrier area 202, the barrier area 202 surrounds the display area 201. The structural schematic diagram of the display panel is shown in Figure 10 The display panel comprises a substrate 10, a barrier structure 20 and a first passivation structure 30.

[0137] The barrier structure 20 is located on one side of the substrate 10 and in the barrier area 202; the barrier structure 20 comprises a first structure 21, the first structure 21 comprises a first metal substructure 211, a second metal substructure 212 and a third metal substructure 213 which are sequentially stacked in a direction away from the substrate 10, the second metal substructure 212 is located in the first metal substructure 211 and the third metal substructure 213 in the orthographic projection of the substrate 10; the first passivation structure 30 is located on the side of the barrier structure 20 away from the substrate 10.

[0138] In the embodiment of the present application, the display panel comprises a display area 201 and a barrier area 202 adjacent to the display area 201. As shown in Figure 7 The barrier area 202 is provided with a barrier structure 20, the barrier structure 20 comprises a first metal substructure 211, a second metal substructure 212 and a third metal substructure 213 which are stacked, and in the cross-sectional direction perpendicular to the display panel, the cross-sectional shape of the barrier structure 20 is H-shaped.

[0139] In the embodiment of the present application, by setting the cross-sectional shape of the barrier structure 20 as H-shaped, the barrier performance of the barrier structure 20 can be improved, and the reliability of the display panel is improved.

[0140] In an embodiment of the present application, the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 has a first set distance d1 with the boundary of the orthographic projection of the first metal substructure 211 on the substrate 10. So that the prepared barrier structure meets the requirements to ensure the performance of the barrier structure, so as to further ensure the formation rate of the barrier structure, and the yield of the organic light emitting display panel can be ensured.

[0141] Optionally, the orthographic projection of the first passivation structure 30 on the substrate 10 covers the orthographic projection of the third metal substructure 213 on the substrate 10. So that the first passivation structure 30 can completely cover the third metal substructure 213, so as to enhance the rigidity of the third metal substructure 213, so as to reduce the probability of the third metal substructure 213 breaking, collapsing and other problems, so as to ensure the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.

[0142] In an embodiment of the present application, the first metal sub-structure 211 is overlapped with the third metal sub-structure 213 in the orthographic projection of the substrate 10. That is, the boundary of the orthographic projection of the second metal sub-structure 212 has a first set distance d1 with the boundary of the orthographic projection of the third metal sub-structure 213.

[0143] In an embodiment of the present application, as shown in FIG. 2, the barrier structure 20 further comprises a second structure 22, the second structure 22 is located on the side of the first structure 21 away from the substrate 10, and the second passivation structure 40 is arranged on the side of the second structure 22 away from the substrate 10. Figure 11

[0144] Optionally, the boundary of the orthographic projection of the fifth metal sub-structure 222 has a second set distance d2 with the boundary of the orthographic projection of the fourth metal sub-structure 221. So that the prepared barrier structure meets the requirements to guarantee the performance of the barrier structure, thereby further guaranteeing the formation rate of the barrier structure and the yield of the organic light-emitting display panel.

[0145] Optionally, the sixth metal sub-structure 223 is overlapped with the fourth metal sub-structure 221 in the orthographic projection of the substrate 10. That is, the boundary of the orthographic projection of the fifth metal sub-structure 222 has a second set distance d2 with the boundary of the orthographic projection of the sixth metal sub-structure 223.

[0146] Optionally, the second passivation structure 40 covers the orthographic projection of the sixth metal sub-structure 223 in the orthographic projection of the substrate 10. So that the second passivation structure 40 can completely cover the sixth metal sub-structure 223 to enhance the rigidity of the sixth metal sub-structure 223, thereby reducing the probability of problems such as fracture and collapse of the sixth metal sub-structure 223, thereby guaranteeing the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.

[0147] In an embodiment of the present application, the fifth metal sub-structure 222 is located within the orthographic projection of the second metal sub-structure 212 in the orthographic projection of the substrate 10.

[0148] ​In an embodiment of the present application, the organic light-emitting layer 117 is arranged on the side of the second passivation structure 40 away from the substrate 10. As known from the foregoing, when the organic light-emitting layer 117 is deposited on the side of the pixel definition structure 116, the organic light-emitting layer 117 is also formed on the side of the second passivation structure 40 away from the substrate 10 in the barrier structure 20 in the barrier region 202. Due to the barrier of the barrier structure 20, the part of the organic light-emitting layer 117 in the display region 201 and the part of the organic light-emitting layer 117 in the barrier region 202 are separated, as shown in FIG. 4. The part of the organic light-emitting layer 117 in the display region 201 is in contact with the anode layer 113, and the part of the organic light-emitting layer 117 can emit light normally during the operation of the display panel. Figure 9

[0149] It should be noted that, in the embodiment of the present application, the organic light-emitting layer 117 is arranged on the side of the second passivation structure 40 away from the substrate 10, so that the organic light-emitting layer 117 in the display region 201 and the organic light-emitting layer 117 in the barrier region 202 are formed simultaneously during the manufacturing process of the display panel, thereby avoiding the use of a mask during the formation of the organic light-emitting layer 117, and reducing the manufacturing cost of the display panel.

[0150] In an embodiment of the present application, the first distance d1 and the second distance d2 are both in the range of 0.3-0.5 microns. It should be noted that the values of the first distance d1 and the second distance d2 both include the end values of 0.3 microns and 0.5 microns.

[0151] In an embodiment of the present application, the barrier region 202 can be provided with a plurality of barrier structures 20, and the distance d3 between two adjacent barrier structures 20 is in the range of 8-15 microns. It should be noted that the value of the distance d3 between two adjacent barrier structures 20 includes the end values of 8 microns and 15 microns. Alternatively, as shown in FIG. 5, the barrier region 202 can be provided with two barrier structures 20. Figure 12

[0152] It should be noted that, as shown in FIG. 6, the distance d3 refers to the distance between two adjacent barrier structures 20 in the direction from the display region 201 to the barrier region 202. Figure 12

[0153] Based on the same inventive concept, the embodiments of the present application provide a display device, which comprises the display panel provided by any of the above embodiments, or comprises a display panel prepared by using the preparation method of the display panel provided by any of the above embodiments.

[0154] By using the embodiments of the present application, the following beneficial effects can be achieved at least:

[0155] ​​​In the method for manufacturing the display panel provided in the embodiments of the present application, after the first passivation structure 30 and the first metal structure 1071 are obtained by patterning the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141, the blocking part 60 formed at the end of the first metal structure 1071 is peeled off in time, so as to avoid the influence of the blocking part 60 on the subsequent etching process of the first metal structure 1071, so as to ensure that the first structure 21, the second metal sub-structure 212 are in the orthographic projection of the substrate 10, and are located in the orthographic projection of the first metal sub-structure 211 and the third metal sub-structure 213 on the substrate 10, so as to ensure the formation rate of the first structure 21, and further ensure the formation rate of the blocking structure 20, and further ensure the yield of the organic light-emitting display panel.

[0156] Further, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the third metal sub-structure 213 of the first structure 21 formed has the first passivation structure 30 formed on the side away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal sub-structure 213, so as to reduce the probability of the third metal sub-structure 213 being broken or collapsed, so as to ensure the reliability of the blocking structure 20 and the formation rate of the blocking structure 20.

[0157] Those skilled in the art can understand that the steps, measures and schemes in the various operations, methods and processes discussed in the present application can be alternated, changed, combined or deleted. Further, other steps, measures and schemes in the various operations, methods and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined or deleted. Further, the steps, measures and schemes in the various operations, methods and processes in the prior art can also be alternated, changed, rearranged, decomposed, combined or deleted.

[0158] In the description of the present application, it should be understood that the terms “center”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer” and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0159] The terms “first” and “second” are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with “first” and “second” can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of “multiple” is two or more.

[0160] In the description of the present application, it is necessary to point out that, unless explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral connection; it can be direct connection, or indirect connection through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0161] In the description of the present application, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0162] It should be understood that, although each step in the flowchart of the accompanying drawings is displayed in sequence according to the direction of the arrow, these steps are not necessarily executed in sequence according to the direction of the arrow. Unless explicitly stated herein, the execution of these steps is not strictly limited in sequence, and they can be executed in other sequences. Moreover, at least part of the steps in the flowchart of the accompanying drawings can include multiple sub-steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence is not necessarily sequential, but can be executed in rotation or alternation with at least part of other steps or sub-steps or stages of other steps.

[0163] The above is only part of the embodiments of the present application, and it should be pointed out that, for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, which should also be regarded as the protection scope of the present application.

Claims

1. A display panel, comprising a display area and a barrier area, the barrier area surrounding the display area, characterized in that, The display panel comprises: a substrate substrate; a barrier structure located on one side of the substrate substrate and in the barrier region; the barrier structure comprises a first structure, the first structure comprises a first metal sub-structure, a second metal sub-structure and a third metal sub-structure which are sequentially stacked in a direction away from the substrate substrate; the second metal sub-structure is located in the first metal sub-structure and the third metal sub-structure in the orthographic projection of the substrate substrate; a pixel structure located on one side of the substrate substrate and in the display region, the pixel structure comprises a first metal layer which is provided in the same layer as the first structure, and the material of the first metal layer is the same as that of the first structure; The barrier structure further comprises a second structure, the second structure is located on the side of the first structure away from the substrate substrate, and the second structure comprises a fourth metal sub-structure, a fifth metal sub-structure and a sixth metal sub-structure which are sequentially stacked in a direction away from the substrate substrate; the fifth metal sub-structure is located in the fourth metal sub-structure and the sixth metal sub-structure in the orthographic projection of the substrate substrate; The display panel further comprises at least one of the following: a first passivation structure provided on the side of the third metal sub-structure away from the substrate substrate; the first passivation structure covers the third metal sub-structure in the orthographic projection of the substrate substrate in the orthographic projection of the substrate substrate; a second passivation structure provided on the side of the sixth metal sub-structure away from the substrate substrate; the second passivation structure covers the sixth metal sub-structure in the orthographic projection of the substrate substrate in the orthographic projection of the substrate substrate.

2. The display panel of claim 1, wherein, The boundary of the orthographic projection of the second metal sub-structure on the substrate substrate has a first specified distance from the boundary of the orthographic projection of the first metal sub-structure on the substrate substrate.

3. The display panel of claim 1, wherein, The orthographic projection of the first metal sub-structure on the substrate substrate overlaps with the orthographic projection of the third metal sub-structure on the substrate substrate.

4. The display panel of claim 2, wherein, The boundary of the orthographic projection of the fifth metal sub-structure on the substrate substrate has a second specified distance from the boundary of the orthographic projection of the fourth metal sub-structure on the substrate substrate.

5. The display panel of claim 4, wherein, The orthographic projection of the sixth metal sub-structure on the substrate substrate overlaps with the orthographic projection of the fourth metal sub-structure on the substrate substrate.

6. The display panel of claim 4, wherein, The pixel structure comprises a second metal layer which is provided in the same layer as the second structure, and the material of the second metal layer is the same as that of the second structure.

7. The display panel of claim 6, wherein, It comprises at least one of the following: The first metal layer comprises a first metal sub-layer, a second metal sub-layer and a third metal sub-layer which are sequentially stacked in a direction away from the substrate substrate; the materials of the first metal sub-layer and the third metal sub-layer are the same, and the material of the second metal sub-layer is different from that of the first metal sub-layer and the third metal sub-layer; the thickness of the first metal sub-layer and the third metal sub-layer is not less than 300 microns and not more than 600 microns, and the thickness of the second metal sub-layer is not less than 6000 microns and not more than 6500 microns; The second metal layer comprises a fourth metal sub-layer, a fifth metal sub-layer and a sixth metal sub-layer which are sequentially stacked in a direction away from the substrate base plate; the fourth metal sub-layer and the sixth metal sub-layer are of the same material, and the fifth metal sub-layer is of a material different from that of the fourth metal sub-layer and the sixth metal sub-layer; The thickness of the fourth metal sub-layer and the sixth metal sub-layer is not less than 300 microns and not more than 600 microns, and the thickness of the fifth metal sub-layer is not less than 6000 microns and not more than 6500 microns.

8. The display panel of claim 4, wherein, The first set distance and the second set distance are both not less than 0.3 microns and not more than 0.5 microns.

9. The display panel of claim 1, wherein, The barrier region is provided with at least two barrier structures, and the distance between any two adjacent barrier structures is not less than 8 microns and not more than 15 microns.

10. The display panel of claim 4, wherein, The fifth metal sub-structure is in the orthographic projection of the substrate base plate, and is located in the orthographic projection of the second metal sub-structure on the substrate base plate.

11. The display panel of claim 4, wherein, The second metal sub-structure is in the orthographic projection of the substrate base plate, and overlaps with the orthographic projection of the fifth metal sub-structure on the substrate base plate.

12. The display panel of claim 1, wherein, Further comprising: An organic light-emitting layer is arranged on the side of the second passivation structure away from the substrate base plate.

13. A display device, characterized by comprising: Comprise: The display panel of any one of claims 1-12.

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