Transfer substrate for manufacturing display device, display device and manufacturing method thereof

Abstract

The present invention relates to a display device utilizing semiconductor light-emitting elements and a method for manufacturing the same. The display device comprises: a substrate including circuit wiring; a lower electrode portion disposed on the substrate and connected to the circuit wiring; and a plurality of nanorod-type semiconductor light-emitting elements separated from each other and vertically arranged on the lower electrode portion.

Description

Technical Field

[0001] The present invention can be applied to the technical field related to display devices, for example, it relates to a method for manufacturing a display device using an LED (Light Emitting Diode) and a transfer substrate for manufacturing the display device. Background Art

[0002] In recent years, the field of display technology has been developing display devices with excellent characteristics such as thinness and flexibility. In contrast, the main commercialized display types are liquid crystal displays (LCDs) and organic light emitting diodes (OLEDs).

[0003] However, LCDs have problems such as insufficient response time and difficulty in achieving flexibility, while OLEDs have problems such as short lifespan and poor mass productivity.

[0004] On the other hand, light emitting diodes (LEDs) are semiconductor light emitting elements that are well-known for converting electric current into light. Starting with the commercialization of red LEDs using GaAsP compound semiconductors in 1962, they have been used to this day, along with GaP:N series green LEDs, as light sources for displaying images in electronic devices, including information and communication equipment. Therefore, a solution to the above-mentioned problems can be proposed by implementing displays using these semiconductor light emitting elements. Compared to filament-based light emitting elements, these semiconductor light emitting elements have various advantages, including long life, low power consumption, excellent initial driving characteristics, and high vibration resistance.

[0005] In the manufacturing process of such LEDs, the process of separating the light-emitting elements from the growth substrate and transferring them to the driver substrate is essential. However, as the chip size of the separated LEDs decreases, the transfer process requires high precision and process complexity.

[0006] Therefore, in order to realize the transfer of LEDs, especially micro displays with ultra-small and high-density chip arrays, the present invention proposes a display device and a transfer method thereof that can place chips at desired positions with high positional accuracy. Summary of the Invention

[0007] Problems to be solved by the invention

[0008] An object of one embodiment of the present invention is to provide a transfer process for manufacturing a display device, wherein MLO is used to separate a nanorod-type semiconductor light-emitting element from a growth substrate.

[0009] Furthermore, another object of an embodiment of the present invention is to solve various problems not mentioned here, which can be understood by those skilled in the art from the overall gist of the description and the drawings.

[0010] Technical solutions to the problem

[0011] The transfer substrate used in the manufacture of a display device utilizing semiconductor light-emitting elements for achieving the above-mentioned purpose may include: a substrate including circuit wiring; a lower electrode portion arranged on the substrate and connected to the circuit wiring; and a plurality of nanorod-type semiconductor light-emitting elements vertically arranged on the lower electrode portion, separated from each other.

[0012] In addition, the end portion of the nanorod-type semiconductor light emitting element opposite to the end portion in contact with the lower electrode portion may include a non-planar contact surface.

[0013] In addition, the non-planar contact surface may be formed by dividing a porous region included in the nano-rod-type semiconductor light-emitting element.

[0014] In addition, a plurality of the nanorod-type semiconductor light-emitting elements may be arranged at predetermined intervals over the entire top surface of the lower electrode portion.

[0015] In addition, at least a portion of the plurality of nano-rod-type semiconductor light-emitting elements may be positioned at an edge of a top surface of the lower electrode portion.

[0016] In addition, a display device using the semiconductor light emitting element may include: a cover substrate stacked on the plurality of the nanorod-type semiconductor light emitting elements; and an upper electrode portion provided on the cover substrate and in contact with the plurality of the nanorod-type semiconductor light emitting elements.

[0017] In addition, the display device using the semiconductor light-emitting element may include: a first partition wall, arranged between the substrate and the cover substrate, separating the unit composed of the lower electrode portion, a plurality of the nanorod-type semiconductor light-emitting elements and the upper electrode portion; and a phosphor, filling the space formed between the first partition walls.

[0018] Furthermore, a display device using the semiconductor light emitting element may include: a color filter provided on the cover substrate corresponding to a position of the cell structure; and a second partition wall separating a plurality of the color filters.

[0019] The plurality of nanorod-type semiconductor light-emitting elements may include: a first nanorod-type semiconductor light-emitting element, comprising a non-planar contact surface at the end connected to the upper electrode portion; and a second nanorod-type semiconductor light-emitting element, comprising a non-planar contact surface at the end connected to the lower electrode portion.

[0020] The first nano-rod type semiconductor light emitting element and the second nano-rod type semiconductor light emitting element may emit light of different wavelengths from each other.

[0021] The display device using the semiconductor light emitting element may include: an additional lower electrode portion provided on the top surface of the cover substrate; and a plurality of third nanorod-type semiconductor light emitting elements vertically arranged and spaced apart from each other on the additional lower electrode portion.

[0022] The first to third nano-rod type semiconductor light emitting elements may emit light of different wavelengths.

[0023] The third nano-rod type semiconductor light emitting element may be provided on the cover substrate corresponding to a separation space formed between the first nano-rod type semiconductor light emitting element and the second nano-rod type semiconductor light emitting element.

[0024] In the manufacturing method of a display device using semiconductor light-emitting elements for achieving the above-mentioned purpose, it may include: a step of forming a plurality of first nanorod-type semiconductor light-emitting elements at preset intervals on a first growth substrate; a step of forming a porous structure by etching the ends of the first nanorod-type semiconductor light-emitting elements connected to the first growth substrate; a step of connecting the first growth substrate with a substrate having a lower electrode portion provided in the growth direction of the first nanorod-type semiconductor light-emitting elements; and a step of removing the first growth substrate when the first nanorod-type semiconductor light-emitting elements arranged on the lower electrode portion are separated from the first growth substrate.

[0025] The first nanorod-type semiconductor light-emitting element arranged on the lower electrode portion has one end bonded to the lower electrode portion and can be separated from the first growth substrate by dividing the porous structure provided at the other end.

[0026] The manufacturing method of a display device using the semiconductor light-emitting element may include: a step of forming a plurality of second nanorod-type semiconductor light-emitting elements with different emission wavelengths at preset intervals on a second growth substrate; a step of forming a porous structure by etching the ends of the second nanorod-type semiconductor light-emitting elements connected to the second growth substrate; a step of connecting the second growth substrate with a cover substrate having an upper electrode portion provided in the growth direction of the second nanorod-type semiconductor light-emitting elements; a step of removing the second growth substrate in a state where the second nanorod-type semiconductor light-emitting elements arranged on the upper electrode portion are separated from the second growth substrate; a step of additionally forming a lower electrode on the substrate and an additionally forming an upper electrode on the cover substrate; and a step of stacking the cover substrate onto the substrate so that the lower electrode and the upper electrode are respectively located at the two ends of the first semiconductor light-emitting element and the second semiconductor light-emitting element.

[0027] Effects of the Invention

[0028] According to an embodiment of the present invention, in a display device using semiconductor light emitting elements, even if some of the plurality of light emitting elements are defective, one pixel can be driven, thereby achieving high yield and process convenience.

[0029] In addition, since one pixel region is formed using the electrode portion located on the substrate, there is no need for additional alignment of the semiconductor light-emitting element, thereby enabling high-speed transfer.

[0030] According to another embodiment of the present invention, there are additional technical effects not mentioned here, which can be understood by those skilled in the art through the general principles of the description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element according to the present invention.

[0032] Figure 2 yes Figure 1 A partial enlarged view of part A.

[0033] Figure 3a and Figure 3b It is along Figure 2 A cross-sectional view taken along lines BB and CC.

[0034] Figure 4 This is a conceptual diagram showing the flip-chip type semiconductor light emitting element of FIG. 3 .

[0035] Figures 5a to 5c This is a conceptual diagram showing various modes of realizing colors in connection with a flip-chip semiconductor light-emitting element.

[0036] Figure 6 It is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting element according to the present invention.

[0037] Figure 7 This is a perspective view showing another embodiment of a display device using a semiconductor light emitting element according to the present invention.

[0038] Figure 8 It is along Figure 7 A sectional view taken along line DD.

[0039] Figure 9 It shows Figure 8 Conceptual diagram of a vertical semiconductor light-emitting element.

[0040] Figure 10 1 is a diagram showing a substrate including a nanorod-type semiconductor light-emitting element.

[0041] Figure 11 This is a diagram showing an exaggerated cross section of a nanorod-type semiconductor light-emitting element.

[0042] Figure 12 This is a top view of a substrate on which nanorod-type light-emitting elements are arranged.

[0043] Figure 13 This is a diagram of a display device after subsequent steps have been performed on a substrate including a semiconductor light-emitting element.

[0044] Figure 14 This figure shows a multi-color display device using a phosphor and a color conversion structure in a display device according to an embodiment of the present invention.

[0045] Figure 15 1 is a diagram illustrating a display device using a semiconductor light emitting element further including a phosphor between first partition walls 260 .

[0046] Figure 16 1 is a diagram illustrating a display device using a semiconductor light emitting element and further including a second partition wall separating a plurality of color filters.

[0047] Figure 17 23 is a diagram showing a display device including two types of semiconductor light emitting elements 2311 and 2312 .

[0048] Figure 18 1 is a diagram illustrating a display device including three types of semiconductor light emitting elements 2311 , 2312 , and 2313 .

[0049] Figure 19 3 is a diagram illustrating a method of manufacturing a display device including a plurality of nanorod-type semiconductor light emitting elements 330 .

[0050] Figure 201 and 2 are diagrams illustrating a method for manufacturing a display device including two types of semiconductor light emitting elements 330 .

[0051] Figure 21 1 is a diagram illustrating a method for manufacturing a display device including three types of semiconductor light emitting elements 330 . DETAILED DESCRIPTION

[0052] Below, with reference to the accompanying drawings and in accordance with the detailed description of the embodiments disclosed in this specification, regardless of the figure numbers, the same or similar constituent elements are given the same figure numbers, and repeated descriptions thereof are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the convenience of writing the specification, and they themselves do not have mutually distinguishable meanings or functions. In addition, in the process of describing the embodiments disclosed in the present invention, when it is judged that the specific description of the relevant known technology will confuse the gist of the embodiments disclosed in the present invention, the detailed description of the known technology is omitted. In addition, it should be understood that the drawings are only used to help understand the embodiments disclosed in this specification, and should not be interpreted as the technical ideas disclosed in this specification being limited to the drawings.

[0053] Furthermore, although the drawings are described separately for the convenience of explanation, those skilled in the art can implement other embodiments by combining at least two or more drawings, which also fall within the scope of the present invention.

[0054] In addition, it will be understood that when elements such as a layer, a region or a substrate are described as being “on” different constituent elements, this means that they are directly on the other elements or intervening elements may exist between the two elements.

[0055] The display device described in this specification is a concept that covers all display devices that display information using unit pixels or a collection of unit pixels. Therefore, it is not limited to finished products and can also be applied to components. For example, the panel itself, which is equivalent to a component of a digital TV, also corresponds to the display device in this specification. Finished products can include mobile phones, smart phones, laptop computers, digital broadcast terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation systems, touch-screen tablet computers (Slate PCs), tablet PCs (Tablet PCs), Ultrabooks (Ultrabooks), digital TVs, desktop computers, etc.

[0056] However, it is obvious to those skilled in the art that the configurations according to the embodiments described in this specification can also be applied to display devices of new product forms developed later.

[0057] In addition, the semiconductor light-emitting elements involved in this specification include concepts such as LED and micro LED, and can be used interchangeably.

[0058] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element according to the present invention.

[0059] like Figure 1 As shown, information processed in a control unit (not shown) of the display device 100 can be displayed using a flexible display.

[0060] Flexible displays include displays that can be bent, folded, twisted, folded, or rolled up, for example, by an external force.

[0061] Furthermore, a flexible display may be a display manufactured on a thin and flexible substrate that can be bent, folded, or rolled up like a piece of paper, while maintaining the display characteristics of an existing flat panel display.

[0062] When the flexible display is not bent (e.g., in a state with an infinite curvature radius, hereinafter referred to as the first state), the display area of the flexible display is a plane. In the first state, when the flexible display is bent due to an external force (e.g., in a state with a finite curvature radius, hereinafter referred to as the second state), the display area may become a curved surface. Figure 1 As shown, the information displayed in the second state can be visual information output on the curved surface. This visual information is achieved by independently controlling the light emission of unit pixels (sub-pixels) arranged in a matrix. For example, the unit pixel represents the smallest unit for realizing a color.

[0063] The unit pixel of the flexible display can be implemented by a semiconductor light-emitting element. In the present invention, a light-emitting diode (LED) is exemplified as a semiconductor light-emitting element that converts current into light. Because the LED is formed in a small size, it can function as a unit pixel even in the second state.

[0064] The flexible display implemented by using the light emitting diodes will be described in further detail with reference to the following drawings.

[0065] Figure 2 yes Figure 1 A partial enlarged view of part A.

[0066] Figure 3a and Figure 3b It is along Figure 2 A cross-sectional view taken along lines BB and CC.

[0067] Figure 4 This is a conceptual diagram showing the flip-chip type semiconductor light emitting element of FIG. 3 .

[0068] Figures 5a to 5c This is a conceptual diagram showing various modes of realizing colors in connection with a flip-chip semiconductor light-emitting element.

[0069] like Figure 2 、 Figure 3a as well as Figure 3b As shown, a display device 100 using a passive matrix (PM) semiconductor light emitting element is exemplified. However, the following examples are also applicable to active matrix (AM) semiconductor light emitting elements.

[0070] like Figure 2 As shown, Figure 1 The display device 100 shown includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and at least one semiconductor light emitting element 150 .

[0071] Substrate 110 can be a flexible substrate. For example, to achieve a flexible display device, substrate 110 can include glass or polyimide (PI). Alternatively, any insulating and flexible material can be used, such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, substrate 110 can be made of either a transparent or opaque material.

[0072] The substrate 110 may be a wiring substrate provided with the first electrode 120 , and thus the first electrode 120 may be located on the substrate 110 .

[0073] like Figure 3aAs shown, the insulating layer 160 can be disposed on the substrate 110 provided with the first electrode 120, and the auxiliary electrode 170 can be located on the insulating layer 160. In this case, the insulating layer 160 stacked on the substrate 110 can form a wiring substrate. More specifically, the insulating layer 160 can be made of an insulating and flexible material, such as polyimide (PI), PET, PEN, etc., and can be integrated with the substrate 110 to form a substrate.

[0074] The auxiliary electrode 170 serves as an electrode electrically connecting the first electrode 120 to the semiconductor light emitting element 150. It is located on the insulating layer 160 and is arranged corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and can be electrically connected to the first electrode 120 via an electrode hole 171 that penetrates the insulating layer 160. The electrode hole 171 can be formed by filling a via hole with a conductive material.

[0075] like Figure 2 or Figure 3a As shown, although conductive adhesive layer 130 is formed on one side of insulating layer 160, the present invention is not limited to this. For example, a layer performing a specific function may be formed between insulating layer 160 and conductive adhesive layer 130, or the conductive adhesive layer 130 may be disposed on substrate 110 without insulating layer 160. In the case where conductive adhesive layer 130 is disposed on substrate 110, conductive adhesive layer 130 may function as an insulating layer.

[0076] The conductive adhesive layer 130 may be a layer having both adhesive and conductive properties. To this end, a conductive substance and an adhesive substance may be mixed in the conductive adhesive layer 130. In addition, since the conductive adhesive layer 130 has ductility, it is possible to realize a flexible function in the display device.

[0077] As an example, the conductive adhesive layer 130 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 can be configured to allow electrical connection in the Z direction through the thickness, while being electrically insulating in the horizontal XY directions. Therefore, the conductive adhesive layer 130 can be referred to as a Z-axis conductive layer (however, hereinafter referred to as a "conductive adhesive layer").

[0078] The anisotropic conductive film is a film in the form of an anisotropic conductive medium mixed with an insulating base member. When heat and pressure are applied, only specific portions of the film become conductive due to the anisotropic conductive medium. Although the following description uses the state of applying heat and pressure to the anisotropic conductive film, other methods can also be used to make the anisotropic conductive film partially conductive. For example, the other methods mentioned above may include applying only one of the heat and pressure or UV curing.

[0079] In addition, for example, the anisotropic conductive medium can be a conductive ball or a conductive particle. For example, the anisotropic conductive film is a film in the form of conductive balls mixed in an insulating base component. If heat and pressure are applied, only a specific part has conductivity due to the conductive balls. The anisotropic conductive film can be in a state containing a plurality of particles, wherein the particles are a core of a conductive material coated with an insulating film of a polymer material. In this case, as the insulating film of the part to which heat and pressure are applied is destroyed, the core has conductivity. At this time, the shape of the core is deformed, and layers that are in contact with each other in the thickness direction of the film can be formed. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the Z-axis direction is locally formed due to the height difference of the relative objects bonded by the anisotropic conductive film.

[0080] As another example, the anisotropic conductive film may be in a state containing a plurality of particles, wherein the particles are an insulating core coated with a conductive material. In this case, the conductive material to which heat and pressure are applied is deformed (pressed and adhered), and has conductivity along the thickness direction of the film. As another example, it may be a form in which the conductive material penetrates the insulating base member along the Z-axis direction and has conductivity along the thickness direction of the film. In this case, the conductive material may have a pointed end.

[0081] The anisotropic conductive film can be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one side of an insulating base member. More specifically, the insulating base member is formed of an adhesive material, and the conductive balls are concentrated at the bottom of the insulating base member. When heat and pressure are applied to the base member, the conductive balls deform together with the conductive balls, thereby becoming conductive in the perpendicular direction.

[0082] However, the present invention is not limited thereto, and the anisotropic conductive film may be in a form in which conductive balls are randomly mixed in an insulating base member, or in a form in which conductive balls are arranged in a single layer (double-ACF), etc.

[0083] Anisotropic conductive paste, as a combination of paste and conductive balls, can be a paste in which conductive balls are mixed with an insulating and adhesive base material. Alternatively, the solution containing conductive particles can be a solution containing conductive microparticles or nanoparticles.

[0084] Refer again Figure 3a The second electrode 140 is located on the insulating layer 160 in a state of being separated from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

[0085] When the auxiliary electrode 170 and the second electrode 140 are located on the insulating layer 160, after forming the conductive adhesive layer 130, if the semiconductor light emitting element 150 is brought into contact in the form of a flip chip by applying heat and pressure, the semiconductor light emitting element 150 is electrically connected to the first electrode 120 and the second electrode 140.

[0086] Reference Figure 4 , the semiconductor light emitting element may be a flip chip type light emitting element.

[0087] For example, the semiconductor light-emitting element includes a p-type electrode 156, a p-type semiconductor layer 155 forming the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 arranged horizontally spaced apart from the p-type electrode 156 on the n-type semiconductor layer 153. In this case, the p-type electrode 156 can be electrically connected to the auxiliary electrode 170 shown in FIG. 3 via the conductive adhesive layer 130, and the n-type electrode 152 can be electrically connected to the second electrode 140.

[0088] Refer again Figure 2 、 Figure 3a as well as Figure 3b The auxiliary electrode 170 is formed long in one direction, so that one auxiliary electrode can be electrically connected to a plurality of semiconductor light emitting elements 150. For example, the p-type electrodes of the semiconductor light emitting elements to the left and right of the auxiliary electrode can be electrically connected to one auxiliary electrode.

[0089] More specifically, due to heat and pressure, semiconductor light-emitting element 150 is pressed into the conductive adhesive layer 130. This makes only the portion between p-type electrode 156 of semiconductor light-emitting element 150 and auxiliary electrode 170, and the portion between n-type electrode 152 of semiconductor light-emitting element 150 and second electrode 140 conductive. The remaining portions, not pressed into the semiconductor light-emitting element, are non-conductive. In this way, conductive adhesive layer 130 not only bonds semiconductor light-emitting element 150 to auxiliary electrode 170, and to second electrode 140, but also creates electrical connections.

[0090] In addition, a plurality of semiconductor light emitting elements 150 constitute a light emitting element array, and a phosphor conversion layer 180 is formed on the light emitting element array.

[0091] The light-emitting element array may include a plurality of semiconductor light-emitting elements having different brightness values. Each semiconductor light-emitting element 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, there may be a plurality of first electrodes 120, such as the plurality of semiconductor light-emitting elements arranged in several columns, and the semiconductor light-emitting elements in each column may be electrically connected to any one of the plurality of first electrodes.

[0092] Furthermore, since multiple semiconductor light-emitting elements are connected in a flip-chip configuration, multiple semiconductor light-emitting elements grown on a transparent dielectric substrate can be utilized. Furthermore, these multiple semiconductor light-emitting elements can be, for example, nitride semiconductor light-emitting elements. Because semiconductor light-emitting element 150 has excellent brightness, even small-sized elements can form a single unit pixel.

[0093] As shown in FIG3 , partition walls 190 may be formed between the semiconductor light emitting elements 150. In this case, the partition walls 190 may separate the individual unit pixels from each other and may be formed integrally with the conductive adhesive layer 130. For example, the semiconductor light emitting elements 150 may be inserted into an anisotropic conductive film, with the base member of the anisotropic conductive film forming the partition walls.

[0094] In addition, if the base member of the anisotropic conductive film is black, the partition wall 190 can have a reflective property and increase contrast even without an additional black insulator.

[0095] As another example, a reflective partition wall may be provided as the partition wall 190. In this case, the partition wall 190 may include a black or white insulator, depending on the purpose of the display device. A white insulator partition wall may enhance reflectivity, while a black insulator partition wall may enhance contrast while maintaining reflective properties.

[0096] Phosphor conversion layer 180 can be located on the outer surface of semiconductor light emitting element 150. For example, if semiconductor light emitting element 150 is a blue semiconductor light emitting element that emits blue B light, phosphor conversion layer 180 converts the blue B light into the hue of a unit pixel. Phosphor conversion layer 180 can be a red phosphor conversion layer 181 or a green phosphor conversion layer 182 that constitutes a single pixel.

[0097] That is, at the position constituting the red unit pixel, a red phosphor conversion layer 181 capable of converting blue light into red R light can be stacked on the blue semiconductor light emitting element, and at the position constituting the green unit pixel, a green phosphor conversion layer 182 capable of converting blue light into green G light can be stacked on the blue semiconductor light emitting element. In addition, at the portion constituting the blue unit pixel, only the blue semiconductor light emitting element can be used alone. In this case, the unit pixels of red R, green G, and blue B can constitute one pixel. More specifically, phosphors of one hue can be stacked along each line of the first electrode 120. Therefore, in the first electrode 120, one line can be an electrode that controls one hue. That is, red R, green G, and blue B can be arranged in sequence along the second electrode 140, thereby realizing a unit pixel.

[0098] However, the present invention is not limited thereto, and unit pixels of red R, green G, and blue B may be realized by combining the semiconductor light emitting element 150 and quantum dots (QD) instead of the phosphor.

[0099] In order to improve contrast, a black matrix 191 may be disposed between each phosphor conversion layer. In other words, the black matrix 191 can improve the contrast between light and dark.

[0100] However, the present invention is not limited thereto, and other structures for realizing blue, red, and green may be used.

[0101] Reference Figure 5a Each semiconductor light-emitting element can be made into a high-output light-emitting element that emits a variety of lights including blue by adding indium (In) and / or aluminum (Al) to gallium nitride (GaN) as the main material.

[0102] In this case, to form a unit pixel (sub-pixel), the semiconductor light-emitting elements can be red, green, and blue semiconductor light-emitting elements, respectively. For example, red (R), green (G), and blue (B) semiconductor light-emitting elements are arranged alternately, and the red (red), green (green), and blue (blue) unit pixels based on the red, green, and blue semiconductor light-emitting elements form a pixel, thereby realizing a full-color display.

[0103] Reference Figure 5b The semiconductor light-emitting element 150a may be provided with a white light-emitting element W, each of which has a yellow phosphor conversion layer. In this case, to form a unit pixel, a red phosphor conversion layer 181, a green phosphor conversion layer 182, and a blue phosphor conversion layer 183 may be provided on the white light-emitting element W. In addition, on such a white light-emitting element W, a unit pixel may be formed by repeating red, green, and blue color filters.

[0104] Reference Figure 5c Alternatively, a structure may be provided on the ultraviolet light emitting element with a red phosphor conversion layer 181, a green phosphor conversion layer 182, and a blue phosphor conversion layer 183. As described above, the semiconductor light emitting element can use the entire range from visible light to ultraviolet light, and can be expanded to a form of semiconductor light emitting element capable of using ultraviolet light as an excitation source for the upper phosphor.

[0105] Referring again to this example, a semiconductor light emitting element is placed on a conductive adhesive layer to form a unit pixel in a display device. Since the semiconductor light emitting element has excellent brightness, a single unit pixel can be formed even in a small size.

[0106] For example, the size of a single semiconductor light emitting element of this type can be 80 μm or less on one side, and can be a rectangular or regular quadrilateral element. If it is a rectangle, the size can be 20×80 μm or less.

[0107] Furthermore, even when a regular quadrilateral semiconductor light-emitting element with a single side length of 10 μm is used as a unit pixel, sufficient brightness for constituting a display device can be exhibited.

[0108] Therefore, taking the case where the size of a unit pixel is a rectangular pixel with one side being 600 μm and the remaining side being 300 μm as an example, the pitch of the semiconductor light emitting elements is relatively large enough.

[0109] Therefore, in such a case, a flexible display device having high image quality equal to or higher than HD can be realized.

[0110] The display device using the semiconductor light emitting element described above can be manufactured by a new manufacturing method. Figure 6 , the manufacturing method is described.

[0111] Figure 6 It is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting element according to the present invention.

[0112] like Figure 6 As shown, first, a conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located. The insulating layer 160 is then stacked on the wiring substrate 110, on which the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are arranged. In this case, the first electrode 120 and the second electrode 140 can be arranged in mutually orthogonal directions. Furthermore, to achieve a flexible display device, the wiring substrate 110 and the insulating layer 160 can each comprise glass or polyimide (PI).

[0113] For example, the conductive adhesive layer 130 may be implemented by an anisotropic conductive film. To this end, the anisotropic conductive film may be coated on the substrate where the insulating layer 160 is located.

[0114] Then, the temporary substrate 112 where the plurality of semiconductor light emitting elements 150 constituting a single pixel are located corresponding to the positions of the auxiliary electrode 170 and the second electrode 140 is arranged so that the semiconductor light emitting elements 150 face the auxiliary electrode 170 and the second electrode 140 .

[0115] In this case, the temporary substrate 112 serves as a growth substrate for growing the semiconductor light emitting element 150 , and may be a sapphire substrate or a silicon substrate.

[0116] When the semiconductor light emitting elements are formed in wafer units, they can be effectively used in display devices by having a spacing and size that can form a display device.

[0117] Then, the wiring substrate and the temporary substrate 112 are thermocompression bonded. For example, the wiring substrate and the temporary substrate 112 can be thermocompression bonded by using an ACF press head. Through the thermocompression bonding, the wiring substrate and the temporary substrate 112 are bonded (bonding). Through the thermocompression bonding, due to the characteristics of the conductive anisotropic conductive film, only the portion between the semiconductor light emitting element 150 and the auxiliary electrode 170 and between the semiconductor light emitting element 150 and the second electrode 140 has conductivity, thereby, the electrode and the semiconductor light emitting element 150 can be electrically connected. At this time, the semiconductor light emitting element 150 is inserted into the interior of the anisotropic conductive film, thereby forming a partition wall between the semiconductor light emitting elements 150.

[0118] Then, the temporary substrate 112 is removed. For example, the temporary substrate 112 can be removed by using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

[0119] Finally, the semiconductor light emitting element 150 is exposed by removing the temporary substrate 112. If necessary, silicon oxide (SiOx) or the like may be coated on the wiring substrate coupled with the semiconductor light emitting element 150 to form a transparent insulating layer (not shown).

[0120] Furthermore, the method may further include forming a phosphor layer on one side of the semiconductor light emitting element 150. For example, if the semiconductor light emitting element 150 is a blue semiconductor light emitting element that emits blue B light, a red phosphor or a green phosphor for converting the blue B light into the hue of a unit pixel may be formed as a layer on one side of the blue semiconductor light emitting element.

[0121] The manufacturing method and structure of the display device using the semiconductor light emitting element described above can be modified in various ways. For example, the display device described above can also be applied to a vertical semiconductor light emitting element.

[0122] In the modifications or embodiments described below, the same or similar components as those in the above-described embodiment are denoted by the same or similar reference numerals, and the above description is used for the description of the same or similar components.

[0123] Figure 7 FIG. 1 is a perspective view showing another embodiment of a display device using a semiconductor light emitting element according to the present invention. Figure 8 It is along Figure 7 A cross-sectional view taken along line DD, Figure 9 It shows Figure 8 Conceptual diagram of a vertical semiconductor light-emitting element.

[0124] With reference to the above drawings, the display device may be a display device using a vertical semiconductor light emitting element of a passive matrix (PM) method.

[0125] The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and at least one semiconductor light emitting element 250 .

[0126] The substrate 210 is a wiring substrate provided with the first electrode 220 and may include polyimide (PI) to realize a flexible display device. Alternatively, any other insulating and flexible material may be used.

[0127] The first electrode 220 is located on the substrate 210 and may be formed as a bar-shaped electrode elongated in one direction. The first electrode 220 may be configured to function as a data electrode.

[0128] The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Similar to a display device using a flip-chip light-emitting element, the conductive adhesive layer 230 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. However, this embodiment also illustrates the case where the conductive adhesive layer 230 is implemented using an anisotropic conductive film.

[0129] When the anisotropic conductive film is provided after the first electrode 220 is positioned on the substrate 210, if the semiconductor light emitting element 250 is connected by applying heat and pressure, the semiconductor light emitting element 250 is electrically connected to the first electrode 220. In this case, the semiconductor light emitting element 250 is preferably positioned on the first electrode 220.

[0130] As described above, the electrical connection is generated because, when heat and pressure are applied to the anisotropic conductive film, it locally becomes conductive in the thickness direction. Therefore, the anisotropic conductive film is divided into conductive portions and non-conductive portions in the thickness direction.

[0131] In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 not only realizes the electrical connection between the semiconductor light emitting element 250 and the first electrode 220 , but also realizes the mechanical connection.

[0132] Thus, semiconductor light-emitting element 250 is positioned on conductive adhesive layer 230, thereby forming a single pixel in the display device. Because semiconductor light-emitting element 250 has excellent brightness, even a small-sized device can form a single unit pixel. For example, the dimensions of a single semiconductor light-emitting element 250 can be 80 μm or less per side, and can be rectangular or square. For example, a rectangular element can be 20 × 80 μm or less.

[0133] The semiconductor light emitting element 250 may be a vertical structure.

[0134] A plurality of second electrodes 240 are provided between the vertical semiconductor light emitting elements. The second electrodes 240 are arranged in a direction intersecting the longitudinal direction of the first electrodes 220 and are electrically connected to the vertical semiconductor light emitting elements 250 .

[0135] Reference Figure 9 Such a vertical semiconductor light-emitting element 250 includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom can be electrically connected to the first electrode 220 via the conductive adhesive layer 230, and the n-type electrode 252 located at the top can be electrically connected to the second electrode 240 described later. Such a vertical semiconductor light-emitting element 250 can have electrodes arranged at the top and bottom, thus having the great advantage of reducing chip size.

[0136] Refer again Figure 8 A phosphor layer 280 may be formed on one side of the semiconductor light-emitting element 250. For example, if the semiconductor light-emitting element 250 is a blue semiconductor light-emitting element 251 that emits blue B light, a phosphor layer 280 may be provided to convert the blue B light into the hue of a unit pixel. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 that constitute a single pixel.

[0137] Specifically, a red phosphor 281 capable of converting blue light into red (R) light can be stacked on a blue semiconductor light-emitting element at the location where the red unit pixel is formed, and a green phosphor 282 capable of converting blue light into green (G) light can be stacked on a blue semiconductor light-emitting element at the location where the green unit pixel is formed. Alternatively, a blue semiconductor light-emitting element alone can be used at the location where the blue unit pixel is formed. In this case, the red (R), green (G), and blue (B) unit pixels can form a single pixel.

[0138] However, the present invention is not limited thereto, and other structures for realizing blue, red, and green may be used, as described in the display device using a flip-chip type light-emitting element.

[0139] Referring again to this embodiment, the second electrode 240 is located between the semiconductor light emitting elements 250 and is electrically connected to the semiconductor light emitting elements 250. For example, the semiconductor light emitting elements 250 may be arranged in a plurality of columns, and the second electrode 240 is located between the columns of the semiconductor light emitting elements 250.

[0140] Since the distance between the semiconductor light emitting elements 250 constituting a single pixel is sufficiently large, the second electrode 240 may be located between the semiconductor light emitting elements 250 .

[0141] The second electrode 240 may be formed as a long bar-shaped electrode that is long in one direction, and may be arranged in a direction perpendicular to the first electrode.

[0142] Furthermore, the second electrode 240 and the semiconductor light-emitting element 250 can be electrically connected via a connecting electrode protruding from the second electrode 240. More specifically, the connecting electrode can be the n-type electrode of the semiconductor light-emitting element 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode is printed or evaporated to cover at least a portion of the ohmic electrode. Thus, the second electrode 240 and the n-type electrode of the semiconductor light-emitting element 250 can be electrically connected.

[0143] Refer again Figure 8 The second electrode 240 can be located on the conductive adhesive layer 230. Optionally, a transparent insulating layer (not shown) made of silicon oxide (SiOx) or the like can be formed on the substrate 210 on which the semiconductor light-emitting element 250 is formed. If the second electrode 240 is to be provided after the transparent insulating layer is formed, the second electrode 240 will be located on the transparent insulating layer. Alternatively, the second electrode 240 can be formed separately from the conductive adhesive layer 230 or the transparent insulating layer.

[0144] If a transparent electrode such as ITO (Indium Tin Oxide) is used to position the second electrode 240 above the semiconductor light-emitting element 250, poor adhesion between the ITO material and the n-type semiconductor layer is a problem. Therefore, in the present invention, the second electrode 240 is positioned between the semiconductor light-emitting elements 250, eliminating the need for a transparent electrode such as ITO. This eliminates the need for transparent materials and allows the use of conductive materials with good adhesion to the n-type semiconductor layer as horizontal electrodes, thereby improving light extraction efficiency.

[0145] Refer again Figure 8 , partition walls 290 may be located between the semiconductor light-emitting elements 250. Specifically, partition walls 290 may be disposed between the vertical semiconductor light-emitting elements 250 to separate the semiconductor light-emitting elements 250 that constitute individual pixels. In this case, the partition walls 290 may function to separate the individual unit pixels from each other and may be integrally formed with the conductive adhesive layer 230. For example, the partition walls may be formed from the base member of the anisotropic conductive film by inserting the semiconductor light-emitting elements 250 into the film.

[0146] In addition, if the base member of the anisotropic conductive film is black, the partition wall 290 can increase the contrast while having a reflective property even without an additional black insulator.

[0147] As another example, an additional reflective partition wall may be provided as the partition wall 190. Depending on the purpose of the display device, the partition wall 290 may include a black or white insulator.

[0148] If the second electrode 240 is located on the conductive adhesive layer 230 between the semiconductor light-emitting elements 250, the partition wall 290 can be located between the vertical semiconductor light-emitting elements 250 and the second electrode 240. Therefore, a single unit pixel can be formed with a small size using the semiconductor light-emitting elements 250. Since the spacing between the semiconductor light-emitting elements 250 is relatively wide enough, the second electrode 240 can be located between the semiconductor light-emitting elements 250, which has the effect of realizing a flexible display device with HD image quality.

[0149] In addition, if Figure 8 As shown, in order to improve contrast, a black matrix 291 can be disposed between each phosphor. In other words, the black matrix 291 can improve the contrast between light and dark.

[0150] Figure 10 1 is a diagram showing a substrate including a nanorod-type semiconductor light-emitting element.

[0151] A display device according to an embodiment may include: a wiring substrate 310 ; a lower electrode portion 320 disposed on the wiring substrate 310 ; and a semiconductor light emitting element 330 arranged on the lower electrode portion.

[0152] The wiring substrate 310 may be a substrate including a printed circuit for applying an electrical signal to the semiconductor light emitting element 330. Specifically, the wiring substrate 310 may correspond to the substrate 110 described above. The lower electrode portion 320 is a component connected to the circuit wiring of the wiring substrate 310 and may correspond to Figure 2The first electrode 120 and the second electrode 140.

[0153] The semiconductor light-emitting element 330 may include a plurality of nanorod-type semiconductor light-emitting elements 331. Nanorod-type semiconductor light-emitting elements 331 have a nanometer-sized width and a micrometer-sized length, and are formed by stacking multiple semiconductor layers along their length. The nanorod shape can have a circular or polygonal cross-section, such as a quadrilateral. Such semiconductor light-emitting elements 330 can be formed by sequentially growing a first-conductivity-type nanorod-type semiconductor, a multiple quantum well, and a second-conductivity-type nanorod-type semiconductor on a growth substrate. Alternatively, they can be formed by etching or etched along their length using a mask using a photolithography process.

[0154] The first conductive type semiconductor and the second conductive type semiconductor may be referred to as an n-type semiconductor and a p-type semiconductor, respectively. Conversely, they may be referred to as a p-type semiconductor and an n-type semiconductor, respectively.

[0155] The length direction of the nanorod-type semiconductor light-emitting element 331 may not be parallel to the wiring substrate 310. Furthermore, the nanorod-type semiconductor light-emitting element 331 may be arranged perpendicularly to the wiring substrate 310. Specifically, a plurality of nanorod-type semiconductor light-emitting elements 331 may be separated from each other and arranged perpendicularly on the lower electrode portion 320.

[0156] The nanorod-type semiconductor light-emitting element 331 is arranged vertically to the wiring substrate 310, thereby ensuring a wider active or accommodating area produced by the three-dimensional structure compared to planar or non-vertically arranged semiconductor light-emitting elements that are not nanorod-type, and obtaining an optical waveguide effect utilizing the refractive index difference between the semiconductor and the surrounding material.

[0157] Furthermore, by arranging the nanorod type semiconductor light emitting element 331 vertically to the wiring substrate 310 , the integration degree is improved due to the narrow cross-sectional area and the three-dimensional structure.

[0158] The lower electrode portion 320 is provided to be connected to a circuit wiring printed on the wiring substrate 310 , thereby being able to fix the nanorod-type semiconductor light emitting element 331 to the wiring substrate 310 .

[0159] To define a pixel, the display device according to an embodiment of the present invention includes a plurality of nano-rod type semiconductor light emitting elements 331 . Therefore, even if some of the plurality of nano-rod type semiconductor light emitting elements 331 are defective, the pixel can still be driven normally.

[0160] Therefore, the process of inspecting, removing, and repairing defective light-emitting elements can be omitted, so when manufacturing a display device including semiconductor light-emitting elements, it is possible to achieve manufacturing in a short time with high yield and low cost.

[0161] In the process of manufacturing a display device including such a semiconductor light emitting element, a transfer process of separating the semiconductor light emitting element from a growth substrate and transferring it to a substrate is indispensable.

[0162] During this transfer process, the light-emitting element is typically separated using an LLO (Laser Lift-off) process. LLO uses laser light to separate the light-emitting element from the growth substrate. For example, the laser-absorbing GaN layer deforms internally to separate the light-emitting element.

[0163] However, the LLO method carries a high risk of damage to the semiconductor light-emitting element itself, as the laser-absorbing layer deforms. Furthermore, the laser-based technology requires expensive equipment, increasing the cost and complexity of the entire process.

[0164] Therefore, in order to prevent such problems, the present invention utilizes an MLO (Mechanical Lift-off) process, which will be described in detail below.

[0165] Figure 11 This is a diagram showing an exaggerated cross section of a nanorod-type semiconductor light-emitting element.

[0166] like Figure 11 As shown in (a), in a display device according to one embodiment of the present invention, the end portion of the nanorod-type semiconductor light-emitting element 331 opposite to the end portion contacting the lower electrode portion 320 may have a non-planar cross-section. In other words, the end portion opposite to the end portion contacting the lower electrode portion 320 may have a non-planar contact surface.

[0167] like Figure 11 As shown in (b), in the present invention, in order to make it easier to utilize the MLO process, in the growth substrate 410 including the nanorod-type semiconductor light-emitting element, a porous region 332 can be formed on the nanorod-type semiconductor light-emitting element by etching. Specifically, when the nanorod-type semiconductor light-emitting element 331 is connected to the growth substrate 410 in the vertical direction (= length direction), the porous region 332 can be included in the connection portion. This non-planar contact surface of the nanorod-type semiconductor light-emitting element 331 can be formed by dividing the nanorod-type semiconductor light-emitting element 331 with the lower electrode portion 320 after the nanorod-type semiconductor light-emitting element 331 is connected. The specific manufacturing method is through Figure 19 Provide explanation.

[0168] Specifically, such a non-planar contact surface may be generated in the following process: during the transfer process of the semiconductor light emitting element 330 , the porous region 332 formed in the semiconductor light emitting element 330 is damaged and separated from the growth substrate by applying pressure during the MLO process.

[0169] At this time, only the semiconductor light emitting elements 330 attached to the lower electrode portion 320 provided on the wiring substrate 310 can be selectively separated, and the semiconductor light emitting elements 330 not bonded to the lower electrode portion 320 are not separated from the growth substrate.

[0170] Therefore, the lower electrode portion 320 may be selectively transferred in a manner corresponding to the pixel region as the light emitting region.

[0171] In the prior art, the transfer process includes separating the semiconductor light-emitting elements grown on the growth substrate from the growth substrate and moving them to a temporary substrate, aligning the moved semiconductor light-emitting elements, and moving the temporary substrate including the aligned semiconductor light-emitting elements to a wiring substrate, resulting in complex procedures and high costs.

[0172] However, in the present invention, in order to solve this problem, the step of transporting the semiconductor light emitting element to the temporary substrate is omitted, thereby simplifying the process.

[0173] To this end, the above-mentioned MLO process is utilized, and the specific content is described in detail below.

[0174] Figure 12 This is a top view of a substrate on which nanorod-type light-emitting elements are arranged.

[0175] A plurality of nano-rod-type semiconductor light-emitting elements 331 can be arranged at predetermined intervals on the top surface of the lower electrode portion 320. Here, the lower electrode portion 320 can be arranged on the wiring substrate 310 in a manner that matches the size and position of the light-emitting region in the display device. To this end, the plurality of nano-rod-type semiconductor light-emitting elements 331 can be arranged at predetermined intervals across the entire top surface of the lower electrode portion 320.

[0176] The lower electrode portion 320 can play a role in defining the light emitting region. Figure 11 (b)) 410 is vertically arranged in a state where it is transferred in matching with the lower electrode portion 320 region to form a light-emitting region.

[0177] In this case, the ends of the plurality of nanorod-type semiconductor light-emitting elements 331 are preferably completely contained within the top surface of the lower electrode portion 320. However, depending on circumstances, the ends of some of the nanorod-type semiconductor light-emitting elements 331 may be arranged so as to partially contact the edge of the top surface of the lower electrode portion 320. Specifically, the plurality of nanorod-type semiconductor light-emitting elements 331 may include: nanorod-type semiconductor light-emitting elements 330a, which are completely contained within the lower electrode portion 320; and nanorod-type semiconductor light-emitting elements 330b, whose ends are disposed at the edge of the lower electrode portion 320.

[0178] According to one embodiment of the present invention, a plurality of nanorod-type semiconductor light-emitting elements 331 are transferred at one time in a state where they are grown at a predetermined interval on the growth substrate 410 so as to match the top surface size of the lower electrode portion 320 , thereby omitting an additional step for aligning the nanorod-type semiconductor light-emitting elements 331 .

[0179] That is, according to an embodiment of the present invention, the semiconductor light emitting element 330 can be positioned at a desired pixel position with high precision without an additional alignment process of the semiconductor light emitting element 330 .

[0180] Figure 13 This is a diagram of a display device after subsequent steps have been performed on a substrate including a semiconductor light-emitting element.

[0181] The display device including the semiconductor light emitting element according to an embodiment of the present invention may further include an upper electrode portion 340 and a cover substrate 350 , which are used in subsequent processes of a wiring substrate 310 including a lower electrode portion 320 and a semiconductor light emitting element 330 .

[0182] At this time, the upper electrode portion 340 is provided on the lid substrate 350 and is in contact with the plurality of nano-rod type semiconductor light emitting elements 331 so as to be connected to the plurality of nano-rod type semiconductor light emitting elements 331 .

[0183] The cover substrate 350 may be an insulating layer for protecting the circuit pattern formed on the wiring substrate 310. To protect the semiconductor light emitting element 330 and the wiring substrate 310, the cover substrate 350 may cover at least a portion of the outer surface of the wiring substrate 310 or the semiconductor light emitting element 330.

[0184] Figure 13 In the figure, only the upper electrode portion 340 and the cover substrate 350 are shown as subsequent processes. However, anyone skilled in the art can manufacture a display structure including nanorod-type semiconductor light-emitting elements.

[0185] One embodiment of the present invention can manufacture a display device including nanorod-type semiconductor light-emitting elements of various structures, as described below.

[0186] Figure 14 This figure shows a multi-color display device using a phosphor and a color conversion structure in a display device according to an embodiment of the present invention.

[0187] According to one embodiment of the present invention, a display device utilizing semiconductor light-emitting elements includes: a wiring substrate 310; a lower electrode portion 320, disposed on the wiring substrate 310; a plurality of nanorod-type semiconductor light-emitting elements 331, contacting the lower electrode portion 320; an upper electrode portion 340, located at an end different from an end of the nanorod-type semiconductor light-emitting element 331 where the lower electrode portion 320 is located, and connected to the nanorod-type semiconductor light-emitting element 331; a cover substrate 350, disposed on the upper electrode; and a first partition wall 361.

[0188] At this time, the first partition wall 361 is in contact with the wiring substrate 310 and the cover substrate 350 to separate a single pixel formed by the lower electrode portion 320, the upper electrode portion 340, and the nanorod-type semiconductor light-emitting element 331. In other words, the first partition wall 361 can separate the unit structure consisting of a single pixel.

[0189] Such first partition walls 361 can prevent light leakage from the semiconductor light emitting element 330. Furthermore, when a phosphor or a color filter described later is used, such light leakage can be prevented, thereby preventing color mixing.

[0190] In addition, the first partition wall 361 can play a role in separating individual unit pixels from each other. Specifically, it is used to limit the printing area to prevent the pattern from spreading due to thixotropy and color mixing when forming the pattern.

[0191] Figure 15 1 is a diagram illustrating a display device using a semiconductor light emitting element further including a phosphor between first partition walls 361 .

[0192] The phosphor 370 may fill the space formed between the first partition walls 361. Figure 15 Although not shown in the figure, the phosphor 370 may be composed of a phosphor and a phosphor adhesive for fixing the phosphor.

[0193] The phosphor may correspond to at least one of the red phosphor 3701, the green phosphor 3702, and the blue phosphor 3703. The phosphor 370 may be configured as at least one of an organic phosphor, quantum dots, and an inorganic phosphor.

[0194] The phosphor binder, which secures the phosphor, can be a transparent material. Organic binders or inorganic color-changing materials can be used. Specifically, organic binders primarily include epoxy and silicone resins. Inorganic color-changing materials include PC (Phosphor Ceramic), PGC (Phosphor Glass Ceramic), PiG (Phosphor in Glass), and BGP (Bulk Glass Phosphor).

[0195] At this time, the phosphor 370 may be partially coated on the nano-rod type semiconductor light emitting element 331 using inkjet, or may be patterned by a photolithography process.

[0196] As described above, the display device according to an embodiment of the present invention can realize multi-color display by applying a color conversion structure using phosphors.

[0197] Figure 16 1 is a diagram illustrating a display device using a semiconductor light emitting element and further including a second partition wall separating a plurality of color filters.

[0198] The color filter 380 may be a filter that allows light of a specific wavelength to pass therethrough, and may be composed of a plurality of color filters 380 including a red filter 3801 , a green filter 3802 , and a blue filter 3803 .

[0199] In this case, the plurality of color filters 380 may be separated by the second partition wall 362. The second partition wall 362 may be provided on the cover substrate 350 so as to correspond to the cells separated by the first partition wall 361.

[0200] As described above, according to the display device of one embodiment of the present invention, multi-color display can be achieved by applying a color conversion structure using color filters.

[0201] According to an embodiment of the present invention, a display device including both the phosphor 370 and the color filter 380 can be realized. In this case, the color filter 380 can prevent the light generated in the semiconductor light emitting element 330 and the light converted in wavelength by the phosphor 370 from mixing with each other and being discharged.

[0202] Therefore, the wavelength of light generated in the semiconductor light emitting element 330 is blocked, and the wavelength of light changed by the phosphor 370 is allowed to pass. For example, when the semiconductor light emitting element 330 generates blue light and the phosphor 370 changes this blue light into red light, the color filter 380 blocks the blue light and allows the red light to pass.

[0203] By utilizing the above-described features of the present invention, it is also applicable when the wavelengths of light emitted by the semiconductor light emitting elements 330 are different from each other, that is, when two or more types of semiconductor light emitting elements 330 are used.

[0204] Figure 17 33 is a diagram showing a display device including two types of semiconductor light emitting elements 3311 and 3312 .

[0205] like Figure 17 As shown, the display device using the semiconductor light emitting element 330 may include a first nano-rod type semiconductor light emitting element 3311 and a second nano-rod type semiconductor light emitting element 3312 .

[0206] At this time, the first nanorod-type semiconductor light emitting element 3311 and the second nanorod-type semiconductor light emitting element 3312 can emit light of different wavelengths. For example, the first nanorod-type semiconductor light emitting element 3311 can be a blue light emitting diode, and the second nanorod-type semiconductor light emitting element 3312 can be a red light emitting diode.

[0207] The first nanorod-type semiconductor light-emitting element 3311 can be vertically arranged on the wiring substrate 310 including the lower electrode portion 320, so as to include a non-planar contact surface at the end thereof that contacts the upper electrode portion. In this case, the first nanorod-type semiconductor light-emitting element 3311 can be arranged in a portion selected as a pixel region.

[0208] The second nanorod-type semiconductor light-emitting element 3312 can be vertically arranged on the cover substrate 350 including the upper electrode portion 340, so as to include a non-planar contact surface at the end thereof that contacts the lower electrode portion. In this case, the second nanorod-type semiconductor light-emitting element 3312 can be arranged in a portion selected as a pixel region.

[0209] By combining such a wiring substrate 310 and a cover substrate 350, a display device including two nanorod-type semiconductor light-emitting elements 331 can be obtained. In this case, the pixel region including the first nanorod-type semiconductor light-emitting element 3311 and the pixel region including the second nanorod-type semiconductor light-emitting element 3312 can be arranged in a non-overlapping manner.

[0210] Figure 18 3311 , 3312 , and 3313 are diagrams illustrating a display device including three types of semiconductor light emitting elements.

[0211] like Figure 18 As shown, the display device using the semiconductor light emitting element 330 may include a first nanorod type semiconductor light emitting element 3311 , a second nanorod type semiconductor light emitting element 3312 and a third nanorod type semiconductor light emitting element 3313 .

[0212] The first nanorod-type semiconductor light-emitting element 3311, the second nanorod-type semiconductor light-emitting element 3312, and the third nanorod-type semiconductor light-emitting element 3313 can emit light of different wavelengths. For example, the first nanorod-type semiconductor light-emitting element 3311 can be a blue light-emitting diode, the second nanorod-type semiconductor light-emitting element 3312 can be a red light-emitting diode, and the third nanorod-type semiconductor light-emitting element 3313 can be a green light-emitting diode.

[0213] The third nanorod-type semiconductor light emitting element 3313 may be vertically arranged on the additional cover substrate 3502 including the additional upper electrode portion 3402 , and an end portion not in contact with the additional upper electrode portion 3402 may include a non-planar contact surface.

[0214] The non-planar contact surface of the third nanorod-type semiconductor light-emitting element 3313 can be connected to the additional lower electrode portion 3202 provided on the cover substrate 3501 during the process of combining the first nanorod-type semiconductor light-emitting element 3311, the second nanorod-type semiconductor light-emitting element 3312 and the third nanorod-type semiconductor light-emitting element 3313.

[0215] The third nanorod-type semiconductor light emitting element 3313 may be vertically arranged on the cover substrate 3501 corresponding to the space formed between the first nanorod-type semiconductor light emitting element 3311 and the second nanorod-type semiconductor light emitting element 2312. In this case, the first nanorod-type semiconductor light emitting element 3311, the second nanorod-type semiconductor light emitting element 3312, and the third nanorod-type semiconductor light emitting element 3313 may be arranged so as not to overlap with each other.

[0216] Figure 19 3 is a diagram illustrating a method of manufacturing a display device including a plurality of nanorod-type semiconductor light emitting elements 331 .

[0217] like Figure 19 As shown in (a), the method for manufacturing a display device including a plurality of nano-rod type semiconductor light emitting elements 331 includes the step of forming a plurality of first nano-rod type semiconductor light emitting elements 331 at predetermined intervals on a first growth substrate (growth substrate 410).

[0218] In this case, the nanorod-type semiconductor light-emitting element 331 can be formed by sequentially growing a first-conductivity-type nanorod-type semiconductor, a multi-quantum well, and a second-conductivity-type nanorod-type semiconductor on a growth substrate 410. This nanorod shape can be grown in a nanorod shape on the growth substrate 410 using any method, such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), or hybrid vapor phase deposition (HVPE). Alternatively, it can be formed by etching or etch-forming using a mask through a photolithography process. In this case, the first-conductivity-type semiconductor and the second-conductivity-type semiconductor can refer to an n-type semiconductor and a p-type semiconductor, respectively, or conversely, can refer to a p-type semiconductor and an n-type semiconductor, respectively.

[0219] The method includes a step of forming the porous region 332 by etching the end portion of the nano-rod type semiconductor light emitting element 331 formed as described above.

[0220] At this time, the porous region 332 can be formed by electrochemical etching, but any other method capable of forming a porous structure may be used.

[0221] The porous region 332 may be formed at an end portion on the first growth substrate side.

[0222] like Figure 19 As shown in (b), a lower electrode portion 320 can be provided on the wiring substrate 310. By providing such a lower electrode portion 320, a light-emitting region can be specified. For example, a region emitting blue light, a region emitting red light, or a region emitting green light can be specified.

[0223] like Figure 19 As shown in (c) and (d), the steps include contacting a first growth substrate including a first nanorod-type semiconductor light emitting element 331 on the wiring substrate 310 .

[0224] At this time, the semiconductor light emitting element 330 is disposed on the lower electrode portion 320, and the semiconductor light emitting element 330 can be selectively transferred to form a pixel region. Mechanical separation can be used to separate the transferred semiconductor light emitting element 330. Mechanical separation can be achieved by applying pressure to the porous region 332 formed on the semiconductor light emitting element 330.

[0225] Thus, the process includes separating the first nano-rod type semiconductor light emitting elements 331 arranged on the lower electrode portion 320 from the first growth substrate and removing the first growth substrate.

[0226] like Figure 19As shown in FIG. 5( e ), a cover substrate 350 including an upper electrode portion 340 may be provided on the semiconductor light emitting elements 330 vertically arranged on the lower electrode portion. In this case, the upper electrode portion 340 may be in contact with the end of the semiconductor light emitting element 330 .

[0227] The cross section of the first nanorod-type semiconductor light emitting element 331 that contacts the upper electrode portion 340 may be non-planar. Such a non-planar surface may be formed by dividing the porous region 332 during the process of mechanically separating the semiconductor light emitting element 330 from the first growth substrate.

[0228] According to one embodiment of the present invention, a display device including a light-emitting element emitting light of one wavelength and a display device including light-emitting elements emitting light of two or more wavelengths can be manufactured. A display device including light-emitting elements of two or more wavelengths will be described below.

[0229] Figure 20 1 and 2 are diagrams illustrating a method for manufacturing a display device including two types of semiconductor light emitting elements 330 .

[0230] like Figure 20 As shown, a display device including two types of semiconductor light emitting elements 330 can be manufactured by bonding a wiring substrate 310 including semiconductor light emitting elements 3311 and 3312 emitting light of different wavelengths and a cover substrate 350 to each other.

[0231] Specifically, the method includes forming a plurality of second nanorod-type semiconductor light-emitting elements 3312 having different emission wavelengths at predetermined intervals on a second growth substrate. The method for forming the second nanorod-type semiconductor light-emitting elements 3312 is the same as the method for forming the first nanorod-type semiconductor light-emitting element 3311.

[0232] The method includes etching the end of the second nanorod-type semiconductor light emitting element 3312 connected to the second growth substrate to form the porous region 332. In this case, the porous region 332 may be formed at the end close to the second growth substrate.

[0233] The process includes the steps of contacting the second growth substrate with a cover substrate 350 having an upper electrode portion 340 provided in the growth direction of the second nanorod-type semiconductor light-emitting element 3312. The process then includes the steps of separating the second nanorod-type semiconductor light-emitting element 3312 arranged on the upper electrode portion 340 from the second growth substrate and removing the second growth substrate.

[0234] At this time, detailed descriptions of the separation of the second nano-rod type semiconductor light emitting element 3312 and the removal of the substrate are the same as those of the separation of the first nano-rod type semiconductor light emitting element 3311 and the removal of the substrate.

[0235] The method includes forming a lower electrode portion 320 on a wiring substrate 310 including a first nanorod-type semiconductor light-emitting element 3311, and forming an upper electrode portion 340 on a lid substrate 350. The method then includes laminating the lid substrate 350 on the wiring substrate 310 by placing the lower electrode portion 320 provided on the wiring substrate 310 in contact with the second nanorod-type semiconductor light-emitting element 3312 and the upper electrode portion 340 provided on the lid substrate 350 in contact with the first nanorod-type semiconductor light-emitting element 3311.

[0236] Figure 21 1 is a diagram illustrating a method for manufacturing a display device including three types of semiconductor light emitting elements 330 .

[0237] The process includes forming a third nanorod-type semiconductor light-emitting element 3313 connected to the third growth substrate and having a porous region formed at one end thereof using the same method as the method for forming the second nanorod-type semiconductor light-emitting element 3312. In this case, the porous region may be formed at the end on the side closest to the third growth substrate.

[0238] The third nanorod-type semiconductor light-emitting element 3313 is transported by bringing the third growth substrate into contact with the additional cover substrate 3502 having the additional upper electrode portion 3402. At this time, the third nanorod-type semiconductor light-emitting element 3313 and the additional upper electrode portion 3402 may be in contact, and the other end of the third nanorod-type semiconductor light-emitting element 3313 that is not in contact with the additional upper electrode portion 3402 may be a non-planar contact surface.

[0239] The process includes forming an additional lower electrode portion 3202 on the cover substrate 3501. The additional lower electrode portion 3202 can define one pixel region.

[0240] The method includes the step of bonding the cover substrate 3501 and the additional cover substrate 3502 so that the additional lower electrode portion 3202 provided on the cover substrate 3501 and the third nanorod-type semiconductor light emitting element 3313 are in contact with each other.

[0241] At this time, the first nano-rod type semiconductor light emitting element 3311 , the second nano-rod type semiconductor light emitting element 3312 , and the third nano-rod type semiconductor light emitting element 3313 may be arranged so as not to overlap with each other and may emit light having different wavelengths.

[0242] As described above, according to the embodiments of the present invention, even if some of the plurality of light emitting elements are defective, there is no problem in driving one pixel, thereby achieving high yield and process convenience.

[0243] In addition, since one pixel area is formed by the electrode portion located on the substrate, there is no need to separately align the semiconductor light-emitting element, thereby enabling high-speed transfer.

[0244] The above description is merely an example of the technical concept of the present invention, and a person skilled in the art can make various modifications and variations without departing from the essential features of the present invention.

[0245] Therefore, the embodiments disclosed in the present invention are not intended to limit the technical concept of the present invention, but are used to illustrate the technical concept, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the appended claims, and all technical concepts within the scope equivalent to the claims should be interpreted as included within the scope of the present invention.

[0246] Description of Reference Numerals

[0247] 310: Substrate

[0248] 320: Lower electrode

[0249] 330: Semiconductor light-emitting element

[0250] 340: Upper electrode

[0251] 350: Cover substrate

[0252] 360: Partition wall

[0253] 370: Phosphor

[0254] 380: Color Filter

Claims

1. A display device using a semiconductor light emitting element, wherein: include: a substrate, including circuit wiring; a lower electrode portion, provided on the substrate and connected to the circuit wiring; A plurality of nanorod-type semiconductor light-emitting elements are vertically arranged on the lower electrode portion and separated from each other; a cover substrate, stacked on the plurality of nanorod-type semiconductor light-emitting elements; as well as an upper electrode portion, disposed on the cover substrate and connected to the plurality of nanorod-type semiconductor light-emitting elements; The plurality of nanorod-type semiconductor light-emitting elements include: a first nanorod-type semiconductor light-emitting element including a non-planar contact surface at an end portion contacting the upper electrode portion; as well as a second nanorod-type semiconductor light-emitting element including a non-planar contact surface at an end portion contacting the lower electrode portion; The first nanorod-type semiconductor light emitting element and the second nanorod-type semiconductor light emitting element emit light of different wavelengths from each other.

2. The display device using a semiconductor light emitting element according to claim 1, wherein: The non-planar contact surface is formed by dividing a porous region included in the nanorod-type semiconductor light-emitting element.

3. The display device using a semiconductor light emitting element according to claim 1, wherein: The plurality of nanorod-type semiconductor light-emitting elements are arranged at predetermined intervals on the entire top surface of the lower electrode portion.

4. The display device using a semiconductor light emitting element according to claim 3, wherein: At least a portion of the plurality of nanorod-type semiconductor light-emitting elements is arranged on the edge of the top surface of the lower electrode portion.

5. The display device using a semiconductor light emitting element according to claim 4, wherein: A display device using the semiconductor light emitting element includes: a first partition wall provided between the substrate and the cover substrate, and separating a unit structure consisting of the lower electrode section, the plurality of nanorod-type semiconductor light-emitting elements, and the upper electrode section; and The phosphor fills the space formed between the first partition walls.

6. The display device using a semiconductor light emitting element according to claim 5, wherein: A display device using the semiconductor light emitting element includes: a color filter provided on the cover substrate and arranged corresponding to a position of the unit structure; and The second partition wall separates the plurality of color filters.

7. The display device using a semiconductor light emitting element according to claim 1, wherein: A display device using the semiconductor light emitting element includes: adding a lower electrode portion disposed on the top surface of the cover substrate; and A plurality of third nanorod-type semiconductor light-emitting elements are vertically arranged on the additional lower electrode portion and separated from each other.

8. The display device using a semiconductor light emitting element according to claim 7, wherein: The first to third nano-rod type semiconductor light emitting elements emit light of different wavelengths.

9. The display device using a semiconductor light emitting element according to claim 7, wherein: The third nano-rod type semiconductor light emitting element is provided on the cover substrate corresponding to a separation space formed between the first nano-rod type semiconductor light emitting element and the second nano-rod type semiconductor light emitting element.

10. A method for manufacturing a display device using a semiconductor light emitting element, wherein: include: forming a plurality of first nanorod-type semiconductor light-emitting elements at predetermined intervals on a first growth substrate; forming a plurality of second nanorod-type semiconductor light-emitting elements having different emission wavelengths at predetermined intervals on a second growth substrate; forming a porous structure by etching an end portion of the first nanorod-type semiconductor light-emitting element connected to the first growth substrate; forming a porous structure by etching an end portion of the second nanorod-type semiconductor light-emitting element connected to the second growth substrate; a step of bringing the first growth substrate into contact with a substrate provided with a lower electrode portion in a direction in which the first nanorod-type semiconductor light-emitting element grows; a step of bringing the second growth substrate into contact with a cover substrate provided with an upper electrode portion in a direction in which the second nanorod-type semiconductor light-emitting element grows; a step of removing the first growth substrate while the first nanorod-type semiconductor light-emitting elements arranged on the lower electrode portion are separated from the first growth substrate, so that the first surfaces of the first nanorod-type semiconductor light-emitting elements are in contact with the lower electrode portion; a step of removing the second growth substrate while the second nanorod-type semiconductor light-emitting elements arranged on the upper electrode portion are separated from the second growth substrate, so that the second surfaces of the second nanorod-type semiconductor light-emitting elements are in contact with the upper electrode portion; as well as a step of additionally forming a lower electrode portion on the substrate and an additionally forming an upper electrode portion on the cover substrate; as well as The step of laminating the cover substrate to the substrate so that the lower electrode portion is located at one end of the first nanorod type semiconductor light emitting element and the second nanorod type semiconductor light emitting element, and the upper electrode portion is located at the other end of the first nanorod type semiconductor light emitting element and the second nanorod type semiconductor light emitting element.

11. The method for manufacturing a display device using a semiconductor light emitting element according to claim 10, wherein: The first nanorod-type semiconductor light-emitting element arranged on the lower electrode portion has one end portion bonded to the lower electrode portion and is separated from the first growth substrate by dividing the porous structure provided at the other end portion.

12. The method for manufacturing a display device using a semiconductor light emitting element according to claim 10, wherein: The method further includes placing a cover substrate including an upper electrode on the first nanorod-type semiconductor light emitting element so that the second surface of the first nanorod-type semiconductor light emitting element is in contact with the upper electrode.

13. The method for manufacturing a display device using a semiconductor light emitting element according to claim 12, wherein: The second surface of the first nanorod-type semiconductor light-emitting element that is in contact with the upper electrode includes a non-planar contact surface.

14. The method for manufacturing a display device using a semiconductor light emitting element according to claim 13, wherein: The non-planar contact surface is formed by separating the first nanorod-type semiconductor light emitting element from the first growth substrate.

15. The method for manufacturing a display device using a semiconductor light emitting element according to claim 12, wherein: The method further includes forming a first partition wall between the substrate and the cover substrate to separate unit sub-pixels formed by the first nano-rod type semiconductor light emitting elements.

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