A temperature sensor assembly, temperature measurement method and system

Abstract

The application discloses a temperature sensor assembly, a temperature measuring method and system, and is based on a ferromagnetic film. The physical characteristics that the temperature has a relevant influence on the size of an abnormal Hall coefficient or a vertical magnetization intensity are utilized to prepare the micron size level temperature sensor device. The corresponding relationship curve between the abnormal Hall resistance difference and the temperature is established by measuring the change curve of the abnormal Hall resistance value and the vertical magnetic field size under different external temperatures. The polynomial fitting degree of the curve is high, the deviation between the test result and the fitting curve is small, and therefore the efficient measurement of the temperature in a wide measuring temperature range of 100K to 490K can be realized. Performance evaluation shows that the above-mentioned thin film structure has good vertical magnetic anisotropy, and the temperature sensor has good repeated test performance, temperature measuring durability, high temperature measuring precision and wide temperature measuring range.

Description

Technical Field

[0001] This invention belongs to the field of temperature measurement, and more specifically, relates to a temperature sensor assembly, a temperature measurement method, and a system. Background Technology

[0002] Currently, most high-precision temperature sensors convert temperature into an electrical signal for measurement. The core of this method is to utilize the temperature-sensitive component within the sensor, based on various temperature-related physical principles, to achieve the conversion between temperature and electrical signals. The wider the measurement range of a temperature sensor, the more application scenarios it can be used in. Commonly used temperature sensors typically have a measurement range between 220K and 400K, and it is difficult to maintain high temperature measurement accuracy across a wide temperature range, from low to high. Summary of the Invention

[0003] In view of the above-mentioned defects or improvement needs of the prior art, the present invention provides a temperature sensor component, a temperature measurement method and system, which can achieve high-precision and wide-range temperature measurement.

[0004] To achieve the above objectives, according to a first aspect of the present invention, a temperature sensor assembly is provided, the assembly being a Hall effect sensor with a cross-shaped structure, and metal electrodes are respectively disposed at the ends of the four branches of the cross-shaped structure;

[0005] Two symmetrical metal electrodes are used to input a preset current Ic.

[0006] Two other symmetrical metal electrodes are used to measure the anomalous Hall voltage U of the component under a unidirectional vertical magnetic field. A U B Thus, the anomalous Hall resistance R of the component is determined. H =(U A -U B ) / Ic, according to R H and R H -T standard fitting curve, to obtain temperature measurement value; the R H The -T standard fitting curve is obtained by fitting the anomalous Hall resistance value of the component at different temperature values ​​under the unidirectional vertical magnetic field.

[0007] Alternatively, two additional symmetrical metal electrodes are used to measure the anomalous Hall voltage U of the component under two perpendicular magnetic fields of opposite directions. A1 U B1 U A2 U B2 To determine the anomalous Hall resistance difference ΔR of the component. H =(U A1 -U B1) / Ic, according to ΔR A2 -U B2 ) / Ic, according to ΔR H and ΔR H -T standard fitting curve, to obtain the temperature measurement value; wherein the ΔR H -T standard fitting curve is obtained by fitting the difference of the anomalous Hall resistance of the component at different temperature values and under different temperature values under two vertical magnetic fields in opposite directions;

[0008] The cross-shaped structure and the metal electrode both comprise a ferromagnetic thin film layer and an insulating layer arranged in sequence from bottom to top.

[0009] The ferromagnetic thin film layer is a Co alloy, a rare earth transition metal, an L10 alloy or a two-dimensional material with ferromagnetism; and the insulating layer is a non-magnetic medium.

[0010] According to a second aspect of the present application, a temperature sensor component is provided, comprising:

[0011] The temperature sensor component according to the first aspect;

[0012] A magnetic field applying component for applying a vertical magnetic field or two vertical magnetic fields in opposite directions to the temperature sensor component.

[0013] A current applying component for inputting a preset current Ic through two mutually symmetrical metal electrodes.

[0014] A voltage detecting component for measuring the anomalous Hall voltage U A , U B of the component under a single vertical magnetic field through other two mutually symmetrical metal electrodes. A1 B1 Or, measuring the anomalous Hall voltage U A2 , U B2 of the component under two vertical magnetic fields in opposite directions respectively.

[0015] A processor for obtaining the temperature measurement value according to R H and R H -T standard fitting curve; wherein the R H -T fitting curve is obtained by fitting the anomalous Hall resistance values of the component at different temperature values and under different temperature values, R H =(U A -U B ) / Ic.

[0016] Or, for obtaining the temperature measurement value according to ΔR H and ΔR H -T standard fitting curve; wherein the ΔR H ​The fitting curve is obtained by fitting the abnormal Hall resistance difference of the temperature sensor assembly at different temperature values and under different temperature values, ΔR H = (U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic.

[0017] According to a third aspect of the present application, a temperature measurement method is provided, which is implemented by using the temperature sensor according to the third aspect, and comprises:

[0018] The calibration stage comprises:

[0019] At different temperatures, a preset current Ic is input through two mutually symmetrical metal electrodes;

[0020] A unidirectional vertical magnetic field is applied to the intersection region of the cross-shaped structure, and the abnormal Hall voltage of the temperature sensor assembly under the unidirectional vertical magnetic field is measured through another two metal electrodes, so as to obtain the abnormal Hall resistance values of the temperature sensor assembly at different temperatures, which are fitted to obtain a relationship curve between the abnormal Hall resistance value and the temperature, which is taken as R H -T standard fitting curve.

[0021] Alternatively, two opposite-direction vertical magnetic fields are applied to the intersection region of the cross-shaped structure, and the abnormal Hall voltages of the temperature sensor assembly under the two vertical magnetic fields respectively are measured through another two metal electrodes, so as to obtain the abnormal Hall resistance difference values of the temperature sensor assembly at different temperatures, which are fitted to obtain a relationship curve between the abnormal Hall resistance difference value and the temperature, which is taken as ΔR H -T standard fitting curve.

[0022] The application stage comprises:

[0023] S1, the temperature sensor assembly is placed in a temperature environment to be measured, a preset current Ic is input through two mutually symmetrical metal electrodes, the unidirectional vertical magnetic field is applied to the intersection region of the cross-shaped structure, and the abnormal Hall voltages U A , U B of the assembly are measured through another two mutually symmetrical metal electrodes; or, the two opposite-direction vertical magnetic fields are applied to the intersection region of the cross-shaped structure, and the abnormal Hall voltages U A1 , U B1 , U A2 , U B2 of the assembly are measured through another two mutually symmetrical metal electrodes.

[0024] S2, the abnormal Hall resistance R H = (UA -U B ) / Ic; or, calculate the anomalous Hall resistance difference ΔR of the temperature sensor assembly. H =(U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic;

[0025] S3, via R H and R H -T standard fitting curve to obtain the temperature measurement value of the environment under test; or, through ΔR H and ΔR H -T standard fitting curve, to obtain the temperature measurement value of the environment under test;

[0026] The strength of the vertical magnetic field is greater than the coercive field of the ferromagnetic thin film layer.

[0027] According to a fourth aspect of the present invention, a temperature measurement system is provided, comprising: a computer-readable storage medium and a processor;

[0028] The computer-readable storage medium is used to store executable instructions;

[0029] The processor is configured to read executable instructions stored in the computer-readable storage medium and execute the method as described in the third aspect.

[0030] In summary, compared with the prior art, the above-described technical solutions conceived by this invention can achieve the following beneficial effects:

[0031] 1. The temperature sensor component provided by this invention is based on a ferromagnetic thin film. Utilizing the physical property that temperature has a correlation with the magnitude of the anomalous Hall coefficient or perpendicular magnetization, a micrometer-scale temperature sensor device is fabricated. By measuring the change curves of the anomalous Hall resistance value and the magnitude of the perpendicular magnetic field under different external temperatures, a correlation curve between the anomalous Hall resistance difference and temperature is established. The curve shows a high goodness of fit, thus enabling efficient measurement over a wide temperature range of 100K to 490K. Performance evaluation shows that the aforementioned thin film structure has good perpendicular magnetic anisotropy, and the temperature sensor exhibits good repeatability, temperature measurement durability, high temperature measurement accuracy, and a wide temperature measurement range.

[0032] 2. In practical applications, the temperature sensor component provided by this invention can be integrated on-chip at the micrometer or even nanometer scale, and integrated with functional devices based on vertical magnetization thin films onto the same spintronic system architecture to achieve multiple functions such as environmental temperature indication, constant temperature control and high temperature early warning, thereby better assisting the integrated system to achieve efficient operation. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the structure of a temperature sensor device provided in an embodiment of the present invention;

[0034] Figure 2 An optical microscope image of a temperature sensor device provided in an embodiment of the present invention;

[0035] Figure 3 This is a schematic diagram of the film structure of the temperature sensor device provided in an embodiment of the present invention;

[0036] Figure 4 Curves showing the variation of the anomalous Hall resistance of the temperature sensor device provided in the embodiments of the present invention with a vertical magnetic field at different temperatures;

[0037] Figure 5 The relationship between the anomalous Hall resistance difference and temperature, and the polynomial fitting curve;

[0038] Figure 6 Figure (a) shows the repeatability test results of the temperature sensor device provided in this embodiment of the invention after 5 cycles at 200K. Figure 6 (b) in the figure shows the repeatability test results of the temperature sensor device provided in the embodiment of the present invention after six cycles at a temperature of 300K;

[0039] Figure 7 (a), (b), (c), and (d) in the figure are the signal output stability test results of the temperature sensor device provided in the embodiment of the present invention at 300K, 325K, 350K, and 375K.

[0040] Figure 8 The figure shows the test results of the reading error of the temperature sensor device provided in the embodiment of the present invention;

[0041] Figure 9 A schematic diagram illustrating the composition of a temperature sensor provided in an embodiment of the present invention;

[0042] Figure 10 This is a performance comparison chart between the temperature sensor provided in this embodiment of the invention and existing sensors. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0044] This invention provides a temperature sensor assembly, such as... Figures 1-2 As shown, the component is a Hall component with a cross-shaped structure, and metal electrodes are respectively provided at the ends of the four branches of the cross-shaped structure;

[0045] Two symmetrical metal electrodes are used to input a preset current Ic.

[0046] Two other symmetrical metal electrodes are used to measure the anomalous Hall voltage U of the component under a unidirectional vertical magnetic field. A U B Thus, the anomalous Hall resistance R of the component is determined. H =(U A -U B ) / Ic, according to R H The temperature measurement value is obtained by fitting a standard fitting curve under the unidirectional vertical magnetic field for different temperature values ​​and the anomalous Hall resistance value of the component at different temperature values.

[0047] Specifically, such as Figure 1 As shown, two metal electrodes in the x-direction are used to input a preset current Ic; two metal electrodes in the y-direction are used to measure the anomalous Hall voltage U of the component under a vertical magnetic field in the z-direction. A U B To calculate the anomalous Hall voltage difference U of the component in the y direction. A -U B Thus, the anomalous Hall resistance R of the component is determined. H =(U A -U B ) / Ic, according to R H The temperature measurement value is obtained by fitting a standard fitting curve under the unidirectional vertical magnetic field for different temperature values ​​and the anomalous Hall resistance value of the component at different temperature values.

[0048] Alternatively, two additional symmetrical metal electrodes are used to measure the anomalous Hall voltage U of the component under two oppositely oriented perpendicular magnetic fields (the two oppositely oriented perpendicular magnetic fields have the same strength). A1 U B1 U A2 U B2 To determine the anomalous Hall resistance difference ΔR of the component. H =(U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic, according to ΔR HThe temperature measurement value is obtained by fitting a standard fitting curve; the standard fitting curve is obtained by fitting different temperature values ​​and the difference in anomalous Hall resistance of the component at different temperature values ​​under two perpendicular magnetic fields with opposite directions.

[0049] The strength of the vertical magnetic field is greater than the coercive field of the ferromagnetic thin film layer.

[0050] Specifically, such as Figure 1 As shown, two metal electrodes in the y-direction are used to measure the anomalous Hall voltage U of the component under a vertical magnetic field in the z-direction. A1 U B1 And the anomalous Hall voltage U of the component under a vertical magnetic field in the -z direction. A2 U B2 To calculate the anomalous Hall voltage difference U of the components in the y direction respectively. A1 -U B1 U A1 -U B1 This allows for the determination of the anomalous Hall resistance difference ΔR of the component. H =(U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic, according to ΔR H The temperature measurement value is obtained by fitting a standard fitting curve; the standard fitting curve is obtained by fitting the component to different temperature values ​​and the difference in anomalous Hall resistance at different temperature values ​​under two perpendicular magnetic fields with opposite directions.

[0051] That is, two mutually symmetrical metal electrodes are used to input a preset current Ic, and two other mutually symmetrical metal electrodes are used to measure the anomalous Hall voltage of the component under a unidirectional or alternating positive and negative vertical magnetic field; thereby determining the anomalous Hall resistance R. H Or the abnormal Hall resistance difference ΔR H The measured R H or ΔR H The temperature measurement value is obtained by comparing it with the standard fitting curve after calibration; the standard fitting curve is obtained by fitting different temperature values ​​and the anomalous Hall resistance value or difference of the component at different temperature values ​​in a vertical magnetic field; the vertical magnetic field should be greater than the coercive field of the ferromagnetic thin film layer.

[0052] Both the cross-shaped structure and the metal electrode include, from bottom to top, a substrate, a ferromagnetic thin film layer (a strongly magnetic material layer), and an insulating layer (a barrier layer).

[0053] The ferromagnetic material layer can be selected from Co alloy with ferromagnetic property, including CoFeB, CoCrTa, CoCrPt, CoCrPtTa, CoNiCrPt, etc.; L10 alloy with ferromagnetic property, including FePt, FePd, CoPt, MnAl, etc.; rare earth transition metal with ferromagnetic property, including Fe 14 Nd2B, SmCo5, Sm2Co 17 , etc.; two-dimensional material with ferromagnetic property, including Fe 3- x GeTe2, Fe 3-x GaTe2, etc. The insulating layer can be selected from non-magnetic medium, including MgO x , AlO x , TiO x , HfO x , MgAlO x , AlN, BN, hBN, etc., or any non-magnetic metal (i.e. diamagnetic metal).

[0054] Preferably, the thickness of the ferromagnetic thin film layer ranges from 0.8 nm to 1.5 nm, and the thickness of the insulating layer ranges from 1 nm to 5 nm.

[0055] Preferably, a heavy metal layer can be further arranged between the substrate and the ferromagnetic thin film layer, and the heavy metal layer is W or Ta, with a thickness ranging from 1 nm to 10 nm.

[0056] Preferably, a top cap layer can be further arranged above the insulating layer, and the top cap layer is Ta, W or Ru.

[0057] Preferably, the top of the metal electrode further includes a Pt or Au layer.

[0058] Preferably, an auxiliary layer is further included between the insulating layer and the top cap layer to form an MTJ structure or a spin valve structure as a whole; wherein the auxiliary layer is a heterojunction magnetic multi-layer film material (i.e. magnetic multi-layer film heterojunction) with high Curie temperature (greater than 500 K) and high coercive field (the magnetic field strength of the high coercive field is higher than the coercive field of the ferromagnetic thin film layer by more than one order of magnitude).

[0059] That is, an auxiliary layer is added as an auxiliary structure between the insulating layer and the top cap layer with respect to the Hall component, and the auxiliary structure is a heterojunction magnetic multi-layer film material with high Curie temperature and high coercive field.

[0060] It can be understood that when the non-magnetic medium is MgO x , AlO x , TiO x , HfO x , MgAlO xThe MTJ structure is composed of an oxide;

[0061] The spin valve structure is composed of a non-magnetic metal.

[0062] Preferably, the ferromagnetic thin film layer is CoFeB, and the insulating layer is MgO; the thickness of the ferromagnetic thin film layer is 1.1 nm, and the thickness of the insulating layer ranges from 2 nm. Figure 3 As shown in the figure, the substrate 1 and the ferromagnetic material layer 3 further include a heavy metal layer 2, which is W and has a thickness of 5 nm. Figure 3 As shown in the figure, the insulating layer 4 has a top cap layer 5, which is Ta and has a thickness of 2 nm. The top of the metal electrode has a Pt layer, which has a thickness of 50 nm.

[0063] Specifically, the temperature sensor assembly is designed based on a heterojunction magnetic multilayer film material, which is a widely used ferromagnetic thin film with perpendicular magnetic anisotropy.

[0064] As shown in the figure, the temperature sensor assembly includes, from bottom to top, a substrate, a heavy metal layer, a ferromagnetic material layer, an insulating layer, and a top cap layer. Figure 3 As shown in the figure, the temperature sensor assembly includes, from bottom to top, a substrate, a heavy metal layer, a ferromagnetic material layer, an insulating layer, and a top cap layer.

[0065] The heavy metal layer, the magnetic material layer, the barrier layer, and the top cap layer are sequentially grown on a thermally oxidized Si substrate by ultra-high vacuum magnetron sputtering, the heavy metal layer is a W heavy metal layer, the magnetic material layer is a CoFeB ferromagnetic thin film layer, the barrier layer is a MgO insulating layer, and the top cap layer is a Ta heavy metal layer.

[0066] The temperature sensor assembly is a Hall device HallBar structure of a "cross-shaped" four-terminal device, and a double-sided exposure photolithography mask is designed to match the Hall device HallBar structure. The temperature sensor assembly is prepared by micro-nano processing technology. The temperature sensor is prepared by micro-nano processing technology including cleaning, spin coating, pre-baking, photolithography exposure, development, ion etching, and glue removal.

[0067] Specifically, the above-mentioned micro-nano processing technology first uses acetone, ethanol, and deionized water to sequentially ultrasonically clean the above-mentioned ferromagnetic film, then uses a spin coater to spin coat photoresist on the cleaned film, pre-bakes the film on a heating table, uses a UV photolithography machine to perform contact exposure, then develops the film using a developer, obtains a photoresist pattern corresponding to the Hall Bar structure, then uses an ion beam etching machine to etch, the photoresist covered part is not affected by etching, and the photoresist uncovered part is etched to the substrate, finally uses an acetone cleaner to remove the photoresist on the surface of the device, and obtains the above-mentioned designed Hall Bar device. The optical micrograph of the temperature sensor device is shown in Figure 2 , the core size of the device (the cross region of the cross structure, i.e. the dashed box region in Figure 2 ) is 40x40μm 2 , and a set of electrodes is subsequently added to the above-mentioned micro-nano processing technology, thereby exposing four electrode parts extending from the core region of the sensor, and a layer of 50nm thick Pt is grown on the four electrodes using an electron beam evaporation (EBE) process, the purpose being to reduce contact resistance, enhance the conductivity of the electrodes, and reduce uneven current distribution caused by wiring; the size of the four electrode parts is 100x100μm 2 .

[0068] Preferably, the thickness of the bottom spin current generation layer is 5nm, the thickness of the magnetic material layer is 1.1nm, the thickness of the barrier layer is 2nm, and the thickness of the top cap layer is 2nm.

[0069] The resistance of the device is related to the magnetization direction of the ferromagnetic layer, and the magnetization direction can be determined by measuring the anomalous Hall resistance (R H ) of the device. During testing, the anomalous Hall effect (AHE) is mainly tested, a test current is passed through both ends of the device, the anomalous Hall voltage is measured at the other two ends, and the anomalous Hall resistance of the device can be obtained by calculation. In the intrinsic mechanism affecting the anomalous Hall effect, temperature changes the energy band structure in various ways such as cell expansion and magnetization increase / decrease, thereby affecting the anomalous Hall conductivity. By measuring the relationship between the anomalous Hall resistance (R H ) and the perpendicular magnetic field at different temperatures, and combining the analysis of the anomalous Hall effect, the relationship curve between the corresponding anomalous Hall resistance difference (ΔR H ) and temperature is given, and a one-to-one correspondence between ΔR H and temperature in a wide temperature range is established.

[0070] After the device is prepared and shaped, the device is fixed on a ceramic test board, four-terminal leads are connected to an anomalous Hall effect test system, and the anomalous Hall effect is tested: first, an electromagnet is used to generate a magnetic field of 1T in the Figure 1In the z-direction shown in (a), a magnetic field is applied perpendicular to the device. A test current is then applied across the device's two ends, and the anomalous Hall voltage is measured at the other two ends. The anomalous Hall resistance of the device can then be calculated. Figure 4 As shown, the anomalous Hall resistance values ​​of the device at different temperatures (100K-460K, with values ​​taken in 20K increments) were tested and synthesized as a function of an applied vertical magnetic field that swept back and forth once from positive to negative. The anomalous Hall resistance difference (ΔR) in the curves was statistically analyzed. H The one-to-one correspondence between the external temperature and the external temperature is as follows: Figure 5 As shown, by Figure 5 The quadratic fitting formula can be used to derive ΔR. H It exhibits a negative linear correlation with temperature, and the goodness of fit R0 2 The value is 0.9961, the temperature coefficient of the first term is -0.48841 mΩ / K, and the temperature coefficient of the second term is -0.00295 mΩ / K. 2 The constant term is 3584.22. In practical temperature measurement applications, this can be achieved by measuring ΔR. H The linear relationship with temperature allows for the calculation of the ambient temperature of the device, meeting the basic temperature measurement requirements of a non-contact temperature sensor.

[0071] Similarly, the one-to-one correspondence between anomalous Hall resistance values ​​at different temperatures and ambient temperatures can be fitted to obtain R. H -T standard fitting curve. In practical temperature measurement applications, this can be achieved by measuring R. H The linear relationship between temperature and ambient temperature can be used to calculate the ambient temperature of the device.

[0072] The temperature sensor device provided in this invention exhibits good repeatability, temperature measurement durability, and high temperature measurement accuracy at both high and low temperatures; the temperature measurement repeatability at high and low temperatures is achieved by... Figure 6 Given (a) and (b) in the text, Figure 6 Figures (a) and (b) show the changes in the anomalous Hall resistance value under repeated cycles at temperatures of 200K and 300K, respectively, as a function of an applied vertical magnetic field that scans back and forth from positive to negative. The near-complete overlap of the rising and falling curves indicates that the device exhibits good repeatability. The data retention and signal output stability of the sensor at different temperatures are shown by… Figure 7 Figures (a), (b), (c), and (d) show the following tests conducted at four typical operating temperatures of the electronic device: 300K (room temperature), 325K, 350K, and 375K. First, a given magnetic field was scanned vertically at a certain temperature to write a fixed resistance state into the device. Then, a continuous read operation was performed on this resistance state, reading the resistance every 5 seconds. The resistance state was then changed, and the read operation was repeated, using four almost equally spaced R values.H The device's stability was tested. Considering testing efficiency, each resistance state was tested for only 10,000 seconds to verify the device's output stability. The results show that none of the four resistance states changed within 10,000 seconds at different temperatures. According to magnetic theory, the device can perform an unlimited number of read / write operations. The curves also show that the Hall resistance value remains very stable after four orders of magnitude of time, proving that the temperature sensor has very high stability across different temperatures within its measurement range.

[0073] The above results verify that the temperature sensor device can perform continuous temperature measurement and sensing over a long period of time after a single initialization; the temperature measurement accuracy is determined by... Figure 8 Given, for device R H The read error was tested and characterized by performing numerous read operations on the same resistive state of the device over a period of time, and the results are as follows: Figure 8 As shown, the resistance of the device varies by approximately 3mΩ, meaning the maximum reading error of the device is 3.66mΩ, demonstrating that the temperature sensor has high temperature measurement accuracy.

[0074] This invention provides a temperature sensor, comprising:

[0075] Temperature sensor assembly as described in any of the above embodiments;

[0076] A magnetic field applying component is used to apply a vertical magnetic field or two vertical magnetic fields with opposite directions to the temperature sensor assembly;

[0077] A current application component is used to input a preset current Ic through two mutually symmetrical metal electrodes;

[0078] A voltage sensing component is used to measure the anomalous Hall voltage U of the component under a unidirectional vertical magnetic field via two additional mutually symmetrical metal electrodes. A U B Alternatively, measure the anomalous Hall voltage U of the component under two perpendicular magnetic fields of opposite directions. A1 U B1 U A2 U B2 ;

[0079] Processor, used to determine R H and R H -T standard fitting curve to obtain temperature measurement value; wherein, R H The -T fitting curve is obtained by fitting the anomalous Hall resistance values ​​of the component at different temperature values. H =(U A -UB ) / Ic;

[0080] or, for ΔR H and ΔR H -T standard fitting curve, to obtain the temperature measurement; wherein, the ΔR H -T fitting curve is obtained by fitting the abnormal Hall resistance difference of the component at different temperature values and under different temperature values, ΔR H = (U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic.

[0081] As shown in Figure 9 , the current application component can be a controlled current source, the voltage detection component can be a voltmeter, and both can be connected with the Hall component through a probe. The magnetic field application component can be a magnetic head. The temperature sensor can further comprise a signal processing module and an instrument control circuit module, the instrument control circuit module is used to apply a preset current and a perpendicular magnetic field, and obtain a Hall voltage, so as to realize the automatic measurement of the external temperature of the application; the signal processing module is used to process the Hall signal obtained by the sensor, which can convert the analog quantity obtained by the sensor into a digital quantity to realize the environmental temperature indication function, and can also be connected with a temperature control device, an alarm device and the like to realize the functions of constant temperature control, high temperature early warning and the like, and enrich the application scenarios of the application.

[0082] As shown in Figure 10 , the temperature sensors on the market can be divided into the following four categories: resistance temperature sensors, thermocouple temperature sensors, IC intelligent temperature sensors and other temperature sensors. Among them, most of the resistance temperature sensors use negative temperature coefficient semiconductor materials, which are small in size, fast in temperature indication, and do not cause thermal load, but there are unstable factors of self-heating caused by large current, resulting in temperature measurement error; the thermocouple temperature sensor is the most commonly used temperature sensor, and its main advantages are wide temperature measurement range and adaptation to various atmospheric environments, and it does not need power supply, is corrosion-resistant, and is low in price, but has high power consumption; the IC intelligent temperature sensor has high linearity, low system cost, high functional integration, supports digital output, and the main disadvantage is that the temperature measurement range is generally limited to -235℃ to 125℃. Compared with the above, the temperature sensor provided by the application can realize efficient measurement of temperature in a wide temperature measurement range of 100K to 490K while ensuring measurement accuracy, and the temperature measurement error is within 1K; the maximum current allowed to pass through the component is 2mA, and the working current under a specific working voltage during temperature measurement is 100μA, indicating that the device has good reliability, is less affected by Joule heat, is not easy to be electrostatically broken down, and has low power consumption required for working.

[0083] The embodiment of the present application provides a temperature measurement method, which is realized by the temperature sensor described in the above embodiment, and comprises the following steps:

[0084] The calibration stage comprises the following steps:

[0085] At different temperatures, preset currents Ic are input through two mutually symmetrical metal electrodes;

[0086] A unidirectional vertical magnetic field is applied to the intersection area of the cross-shaped structure, and the extraordinary Hall voltage of the temperature sensor assembly under the unidirectional vertical magnetic field is measured through the other two metal electrodes, so that the extraordinary Hall resistance values of the temperature sensor assembly at different temperatures are obtained, which are fitted to obtain a relationship curve of the extraordinary Hall resistance value and the temperature, and the relationship curve is taken as R-T standard fitting curve. H -T standard fitting curve.

[0087] Alternatively, two vertical magnetic fields with opposite directions are applied to the intersection area of the cross-shaped structure, and the extraordinary Hall voltages of the temperature sensor assembly under the two vertical magnetic fields respectively are measured through the other two metal electrodes, so that the extraordinary Hall resistance value difference of the temperature sensor assembly at different temperatures is obtained, which is fitted to obtain a relationship curve of the extraordinary Hall resistance difference and the temperature, and the relationship curve is taken as ΔR-T standard fitting curve. H -T standard fitting curve.

[0088] The application stage comprises the following steps:

[0089] S1, the temperature sensor assembly is placed in a temperature environment to be measured, preset currents Ic are input through two mutually symmetrical metal electrodes, the unidirectional vertical magnetic field is applied to the intersection area of the cross-shaped structure, and the extraordinary Hall voltage U A , U B of the assembly is measured through the other two mutually symmetrical metal electrodes; or, the two vertical magnetic fields with opposite directions are applied to the intersection area of the cross-shaped structure, and the extraordinary Hall voltages U A1 , U B1 , U A2 , U B2 of the assembly are measured through the other two mutually symmetrical metal electrodes.

[0090] S2, the extraordinary Hall resistance R H =(U A -U B ) / Ic of the temperature sensor assembly is calculated; or, the extraordinary Hall resistance difference ΔR H =(U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic of the temperature sensor assembly is calculated.

[0091] S3, by R H and R H -T standard fitting curve, to obtain the temperature measurement value of the environment to be measured; or, by ΔR H and ΔR H -T standard fitting curve, to obtain the temperature measurement value of the environment to be measured;

[0092] The strength of the perpendicular magnetic field is greater than the coercive field of the ferromagnetic thin film layer.

[0093] Specifically, the temperature sensor assembly is placed in the temperature environment to be measured for a period of time, so that it can fully perceive the ambient temperature. Then, a preset current Ic is applied to both ends of the x direction of the assembly, a unidirectional perpendicular electric field greater than the coercive field or a positive and negative perpendicular magnetic field is applied to the perpendicular direction of the assembly, and the abnormal Hall voltage between the metal electrodes at both ends of the y direction of the assembly is read out. The abnormal Hall resistance value R H or the abnormal Hall resistance difference ΔR H is calculated. According to R H -T standard fitting curve or ΔR H -T standard fitting curve, the temperature measurement value of the temperature environment to be measured is determined.

[0094] The embodiment of the present application provides a temperature measurement system, comprising: a computer readable storage medium and a processor.

[0095] The computer readable storage medium is used for storing executable instructions.

[0096] The processor is used for reading the executable instructions stored in the computer readable storage medium, and executing the method as described in any of the above embodiments.

[0097] Those skilled in the art can easily understand that the above description is only a preferred embodiment of the present application, and is not used to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A temperature sensor assembly, characterized by The component is a Hall component in a cross-shaped structure, and a metal electrode is arranged on the end of each branch of the cross-shaped structure; Two mutually symmetrical metal electrodes are used to input a preset current Ic; Two other symmetrical metal electrodes are used to measure the anomalous Hall voltage U of the component under a unidirectional vertical magnetic field. A U B Thus, the anomalous Hall resistance R of the component is determined. H =(U A -U B ) / Ic, according to R H and R H -T standard fitting curve, to obtain temperature measurement value; the R H The -T standard fitting curve is obtained by fitting the anomalous Hall resistance value of the component at different temperature values ​​under the unidirectional vertical magnetic field. or, two other mutually symmetrical metal electrodes are used to measure the anomalous Hall voltage U A1 , U B1 , U A2 , U B2 of the component under two perpendicular magnetic fields in opposite directions respectively H =(U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic, and the temperature measurement value is obtained according to the ΔR H -T standard fitting curve and the ΔR H -T standard fitting curve; the ΔR H -T standard fitting curve is obtained by fitting the anomalous Hall resistance difference of the component under different temperature values and at different temperature values under the two perpendicular magnetic fields in opposite directions. The cross-shaped structure and the metal electrode each include a ferromagnetic thin film layer and an insulating layer arranged in sequence from bottom to top; The ferromagnetic thin film layer is a Co alloy, a rare earth transition metal, an L10 alloy or a two-dimensional material with ferromagnetism; and the insulating layer is a non-magnetic medium.

2. The assembly of claim 1, wherein, The Co alloy with ferromagnetism is any one of a Co-Fe-B alloy, a Co-Cr-Ta alloy, a Co-Cr-Pt alloy, a Co-Cr-Pt-Ta alloy or a Co-Ni-Cr-Pt alloy; The rare earth transition metal with ferromagnetism is any one of a Nd-Fe-B alloy, a Sm-Co alloy or a RE-Fe-B alloy; The L10 alloy with ferromagnetism is any one of a Fe-Pt alloy, a Fe-Pd alloy, a Co-Pt alloy or a Mn-Al alloy; The two-dimensional material having ferromagnetism is Fe 3-x GeTe2, Fe 3-x GaTe2; The non-magnetic medium is any one of MgO x , AlO x , TiO x , HfO x , MgAlO x , AlN, BN, hBN, or any non-magnetic metal.

3. The assembly of claim 1, wherein, The thickness of the ferromagnetic thin film layer ranges from 0.8 nm to 1.5 nm, and the thickness of the insulating layer ranges from 1 nm to 5 nm.

4. The assembly of claim 1 or 3, wherein, The ferromagnetic thin film layer further includes a heavy metal layer below the ferromagnetic thin film layer, and the heavy metal layer is W or Ta with a thickness ranging from 1 nm to 10 nm.

5. The assembly of claim 4, wherein, The insulating layer further includes a top cap layer above the insulating layer, and the top cap layer is Ta, W or Ru.

6. The assembly of claim 1 or 5, wherein, The metal electrode further includes a Pt or Au layer on the top of the metal electrode.

7. The assembly of claim 5, further comprising an auxiliary layer between the insulating layer and the top cap layer to form an MTJ structure or a spin valve structure; wherein, The auxiliary layer is a heterojunction magnetic multi-layer film material with a high Curie temperature and a high coercive field.

8. A temperature sensor, characterized by The temperature sensor component comprises: The temperature sensor component according to any one of claims 1-7; A magnetic field application component for applying a vertical magnetic field or two vertical magnetic fields with opposite directions to the temperature sensor component; A current application component for inputting a preset current Ic through two mutually symmetrical metal electrodes; A voltage detection assembly for measuring the anomalous Hall voltage U of the assembly in a unidirectional perpendicular magnetic field by means of two other mutually symmetrical metal electrodes A , B ; or, measuring the anomalous Hall voltage U of the assembly in two perpendicular magnetic fields respectively in opposite directions A1 , B1 , A2 , B2 ; a processor configured to determine a temperature measurement from a fit of R H and R H -T standard curves; wherein the R H -T fit curves are determined from a fit of different temperature values and anomalous Hall resistance values of the component at the different temperature values, R H = (U A -U B ) / Ic; or, for ΔR H and ΔR H - the temperature measurement is obtained by fitting a standard curve to the values of ΔR H - the fitting curve is obtained by fitting the values of ΔR H = (U A1 -U B1 ) / Ic-(U A2 -U B2 ) / Ic.

9. A temperature measuring method, implemented using the temperature sensor according to claim 8, characterized in that, The temperature sensor component comprises: A calibration stage: At different temperatures, a preset current Ic is input through two mutually symmetrical metal electrodes; applying a unidirectional perpendicular magnetic field to the cross region of the cross structure, measuring the anomalous Hall voltage of the temperature sensor assembly under the unidirectional perpendicular magnetic field by another two metal electrodes to obtain the anomalous Hall resistance values of the temperature sensor assembly at different temperatures, fitting the anomalous Hall resistance values to obtain a relationship curve between the anomalous Hall resistance value and the temperature, taking the relationship curve as R H - T standard fitting curve; or, applying two perpendicular magnetic fields with opposite directions to the cross region of the cross structure, measuring the anomalous Hall voltage of the temperature sensor assembly under the two perpendicular magnetic fields respectively by the other two metal electrodes, obtaining the difference of the anomalous Hall resistance values of the temperature sensor assembly at different temperatures, fitting the difference of the anomalous Hall resistance values and the temperature to obtain a relationship curve of the difference of the anomalous Hall resistance values and the temperature, taking the relationship curve as ΔR H - T standard fitting curve; An application stage: S1, placing the temperature sensor assembly in a temperature environment to be measured, inputting preset current Ic through two mutually symmetrical metal electrodes; applying the unidirectional vertical magnetic field to the intersection region of the cross-shaped structure, measuring the anomalous Hall voltage U of the assembly through another two mutually symmetrical metal electrodes A , B ; or, applying the two vertical magnetic fields in opposite directions to the intersection region of the cross-shaped structure, measuring the anomalous Hall voltage U of the assembly through another two mutually symmetrical metal electrodes A1 , B1 , A2 , B2 ; S2, calculating the anomalous Hall resistance R of the temperature sensor assembly H = (U A -U B ) / Ic; or, calculating the anomalous Hall resistance difference ΔR of the temperature sensor assembly H = (U A1 -U B1 ) / Ic - (U A2 -U B2 ) / Ic; S3, by R H and R H -T standard fitting curve, to obtain the temperature measurement value of the environment to be measured; or, by ΔR H and ΔR H -T standard fitting curve, to obtain the temperature measurement value of the environment to be measured; The strength of the vertical magnetic field is greater than the coercive field of the ferromagnetic thin film layer.

10. A temperature measurement system characterized by, The temperature sensor component comprises: A computer readable storage medium and a processor; The computer readable storage medium is used to store executable instructions; The processor is used to read the executable instructions stored in the computer readable storage medium and execute the method according to claim 9.

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