Measuring tool and method for detecting SiPM chip array mounting precision

Abstract

The application relates to a measuring tool and method for detecting SiPM chip array mounting precision, which comprises a base material layer, a mapping material layer, and four sides arranged between a first light-transmitting surface and a second light-transmitting surface oppositely arranged in the base material layer; the mapping material layer comprises a detection part and four fixed parts fixedly connected with the detection part; the detection part is provided with a plurality of first through holes for connecting a first surface and a second surface of the mapping material layer, each of the plurality of first through holes corresponds to one chip, and the second surface is fixedly connected with the second light-transmitting surface except for an aperture area of the plurality of first through holes; and each of the four fixed parts is fixedly connected with one side, so that the time cost and the labor cost can be reduced, the SiPM detector coupling precision can be improved, and the performance of the SiPM detector can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of medical instrument nuclear medicine technology, and in particular to a measuring tool and method for detecting SiPM chip array mounting precision. BACKGROUND

[0002] Silicon photomultiplier (SiPM) is an array of avalanche photodiodes working in Geiger mode. Compared with the traditional photo multiplier tube (PMT), it has large gain, low working voltage, small volume, light weight, good process compatibility, and is not sensitive to magnetic field. With its technology becoming mature, it plays an important role in weak light detection and radiation detection.

[0003] At present, it is gradually replacing PMT in many fields such as astrophysics, high-energy physics and biomedicine, especially in the application of positron emission computed tomography (Positron Emission Computed Tomography, PET). In the field of nuclear medicine, PMT is usually used in the form of array, while SiPM with smaller photoelectric sensitive area needs to be used in the form of larger array. Since the number of SiPM chip array is large, the structure and arrangement of SiPM chip array with different requirements are also different, so the mounting precision of SiPM chip is required to be higher. In addition, the mounting precision of SiPM chip array directly affects the coupling precision of SiPM detector, and further affects the performance of SiPM detector.

[0004] Therefore, how to quickly and simply measure the mounting precision of SiPM chip array and further ensure the performance of SiPM detector has become an important work for the production line of SiPM detector. For the production line of SiPM detector, the purchase of high-precision testing equipment increases the cost of equipment, and the use of high-precision equipment for full inspection of SiPM chip array requires too much labor cost and time cost. SUMMARY

[0005] (I) Technical problems to be solved

[0006] In view of the above-mentioned shortcomings and deficiencies of the prior art, the present application provides a measuring tool and method for detecting SiPM chip array mounting precision, which solves the technical problem of high labor cost and time cost in the prior art.

[0007] (II) Technical solutions

[0008] In order to achieve the above-mentioned purposes, the main technical solutions adopted by the present application include:

[0009] In a first aspect, the embodiments of the present application provide a measurement tool for detecting the mounting precision of a SiPM chip array, the SiPM chip array is mounted on a PCB board, and the SiPM chip array includes a plurality of chips; the measurement tool includes: a base material layer including a first light-transmitting surface and a second light-transmitting surface arranged oppositely, and four side surfaces arranged between the first light-transmitting surface and the second light-transmitting surface; a mapping material layer including a detection part and four fixed parts fixedly connected with the detection part, the detection part is provided with a plurality of first through holes for connecting the first surface and the second surface of the mapping material layer, each of the plurality of first through holes corresponds to one chip, and the other area of the second surface except the aperture area of the plurality of first through holes is fixedly connected with the second light-transmitting surface, and each of the four fixed parts is fixedly connected with one side surface.

[0010] Therefore, by means of the above scheme, the embodiments of the present application can greatly reduce the cost of purchasing equipment, the labor cost and the time cost of testing for detecting the mounting precision of the chips of the SiPM chip array, and can also quickly and effectively detect the mounting precision of the chips of the SiPM chip array, thereby improving the coupling precision of the SiPM detector, and further improving the performance of the SiPM detector.

[0011] In a possible embodiment, the base material layer is composed of acrylic material or quartz glass.

[0012] In a possible embodiment, the measurement tool further includes an optical transparent adhesive layer, the optical transparent adhesive layer is arranged between the base material layer and the mapping material layer, and the optical transparent adhesive layer includes a plurality of second through holes penetrating the optical transparent adhesive layer, and each of the plurality of second through holes corresponds to one first through hole.

[0013] In a possible embodiment, the length of the base material layer is determined by the length of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer.

[0014] In a possible embodiment, the width of the base material layer is determined by the width of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer.

[0015] In a possible embodiment, the thickness of the base material layer ranges from 5 to 10 millimeters.

[0016] In a possible embodiment, the thickness of the mapping material layer ranges from 100 to 600 micrometers.

[0017] In a possible embodiment, the mapping material layer is composed of an ESR film or a polytetrafluoroethylene reflective film.

[0018] In one possible embodiment, the size of the first through hole is determined by the size of the chip and the allowed mounting tolerance of the chip of the SiPM chip array.

[0019] In a second aspect, the embodiments of the present application provide a method for detecting the mounting precision of a SiPM chip array on a PCB, comprising: buckling the SiPM chip array on a mapping material layer of a measuring tool for detecting the mounting precision of the SiPM chip array; wherein the measuring tool is the measuring tool for detecting the mounting precision of the SiPM chip array of any one of the first aspect; determining the embedding condition of the chip of the SiPM chip array in the through hole of the measuring tool through the first light-transmitting surface of the base material layer of the measuring tool; and determining the mounting precision of the chip of the SiPM chip array based on the embedding condition.

[0020] In order to make the above-mentioned purposes, features and advantages realized by the embodiments of the present application more obvious and easy to understand, the following preferred embodiments are specifically described in detail below, and the accompanying drawings are referred to. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly explain the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation to the scope, and for those skilled in the art, other related drawings can also be obtained without paying creative labor on the basis of these drawings.

[0022] Figure 1 A schematic diagram of a base material layer provided by the embodiments of the present application is shown;

[0023] Figure 2 A schematic diagram of a mapping material layer provided by the embodiments of the present application is shown;

[0024] Figure 3 A flow chart of a method for detecting the mounting precision of a SiPM chip array on a PCB provided by the embodiments of the present application is shown;

[0025] Figure 4 A schematic diagram of a test process of a SiPM chip array provided by the embodiments of the present application is shown. DETAILED DESCRIPTION

[0026] In order to better explain the present application and facilitate understanding, the following will describe the present application in detail through specific embodiments, with reference to the accompanying drawings.

[0027] At present, the detector made of SiPM chip array and scintillation crystal can be applied to many fields, and the performance of the detector is required to be high. Moreover, there are many factors affecting the performance of the detector, and the coupling accuracy of the SiPM chip array and the scintillation crystal is one of the important indicators, and the chip mounting accuracy of the SiPM chip array will directly affect the coupling accuracy of the SiPM chip array and the scintillation crystal, and then affect the performance of the detector.

[0028] For the manufacturer producing the detector, to detect the mounting accuracy of the SiPM chip array in batches, a relatively high-precision test equipment, more test personnel and test time are required, and the relative test cost is relatively high. Especially for the production line which mass produces and highly requires the mounting accuracy of the SiPM chip array, the comprehensive detection of the mounting accuracy of the SiPM chip array becomes a work with very high cost.

[0029] Based on this, the embodiment of the present application provides a measuring tool and method for detecting the mounting accuracy of the SiPM chip array, the measuring tool comprises a base material layer, a mapping material layer, and the base material layer comprises a first light transmission surface and a second light transmission surface arranged oppositely, and four side surfaces arranged between the first light transmission surface and the second light transmission surface; the mapping material layer comprises a detection part and four fixed parts fixedly connected with the detection part, the detection part is provided with a plurality of first through holes for connecting the first surface and the second surface of the mapping material layer, each of the plurality of first through holes corresponds to a chip, and the other area of the second surface except the aperture area of the plurality of first through holes is fixedly connected with the second light transmission surface, and each of the four fixed parts is fixedly connected with a side surface.

[0030] Therefore, by means of the above-mentioned scheme, the embodiment of the present application can greatly reduce the cost of purchasing equipment, the labor cost and time cost of testing for detecting the mounting accuracy of the chip of the SiPM chip array, and can also quickly and effectively detect the mounting accuracy of the chip of the SiPM chip array, so as to improve the coupling accuracy of the SiPM detector, and then improve the performance of the SiPM detector.

[0031] In order to better understand the above technical solutions, the exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a clearer, more thorough understanding of the present application and to convey the complete scope of the present application to those skilled in the art.

[0032] Please refer to Figure 1 , Figure 1 A schematic diagram of a base material layer provided by the embodiment of the present application is shown. As shown in Figure 1As shown, the base material layer includes a first light-transmitting surface S1 and a second light-transmitting surface S2 arranged oppositely, and four side surfaces arranged between the first light-transmitting surface S1 and the second light-transmitting surface S2. That is, the first light-transmitting surface S1 and the second light-transmitting surface S2 in the base material are high light-transmitting surfaces, and the four side surfaces in the base material have no requirement on transparency.

[0033] It should be understood that the specific material of the base material layer and its size, etc. can be set according to actual needs, and the embodiments of the present application are not limited thereto.

[0034] Optionally, a transparent material can be selected as the base material layer, and the base material layer requires a material with high transparency and high hardness and wear resistance, for example, acrylic material and quartz glass, etc., so that the mounting precision test of the chips of the SiPM chip array can be directly observed through the base material layer.

[0035] Optionally, continuing to refer to Figure 1 , the width of the base material layer is A, and the width of the base material layer can be determined according to the width of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer.

[0036] It should also be understood that the specific calculation formula of the width of the base material layer can be set according to actual needs, and the embodiments of the present application are not limited thereto.

[0037] For example, the width of the base material layer can be calculated by the following formula:

[0038] ;

[0039] Wherein, A can represent the width of the base material layer; may represent the width of the SiPM chip array; may represent the thickness of the mapping material layer; may represent the thickness of the optical transparent adhesive layer.

[0040] Optionally, continuing to refer to Figure 1 , the length of the base material layer is B, and the length of the base material layer can be determined according to the length of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer.

[0041] It should also be understood that the specific calculation formula of the length of the base material layer can be set according to actual needs, and the embodiments of the present application are not limited thereto.

[0042] For example, the length of the base material layer can be calculated by the following formula:

[0043] ;

[0044] Wherein, B can represent the length of the base material layer; It can represent the length of the SiPM chip array; It can represent the thickness of the mapped material layer; It can indicate the thickness of the optically transparent adhesive layer.

[0045] Optionally, the thickness of the base material layer can be in the range of 5 to 10 mm, thus requiring relatively low dimensional precision.

[0046] Please see Figure 2 , Figure 2 A schematic diagram of a mapping material layer provided in an embodiment of this application is shown. Figure 2 As shown, the mapping material layer includes a detection section and four bendable fixing sections fixedly disposed around the detection section. The detection section is provided with a plurality of first through holes, each of which connects a first surface and a second surface of the mapping material layer, and each of the first through holes corresponds to a chip (e.g., in a SiPM chip array including...). In the case of a single chip, the detection unit can be equipped with There are three first through holes, and each first through hole can accommodate one chip (M and N are both positive integers). The first surface is as follows: Figure 2 The first surface of the mapped material layer is shown, and the second surface is a surface positioned opposite to the first surface. Figure 2 (Not shown).

[0047] It should be understood that the size of the mapping material layer, its dimensions, and the processing procedures can all be set according to actual needs, and the embodiments of this application are not limited thereto.

[0048] Optionally, the material of the mapping material layer needs to meet the requirements of laser precision processing and the material should not be easily broken. The material of the mapping material layer can be ESR film and polytetrafluoroethylene reflective film, etc.

[0049] Optionally, the thickness of the mapping material layer is ,and The value range is 100~600 micrometers.

[0050] And, see also Figure 2 The dimensions a and b of the mapped material layer are the dimensions to be precisely controlled, along with the required tool dimensions. and Maintain consistency. The width of the four fixing parts of the mapping material layer should at least match the thickness of the base material layer. High precision is not required; that is, the four fixing parts should be able to partially cover at least four sides of the testing tool.

[0051] Of course, it should be understood that the width of the four fixing parts can be the sum of the thickness of the mapping material layer, the thickness of the optically transparent adhesive layer and the thickness of the base material layer, that is, the four edges of the test tool can be fully covered, and the fixing effect can be optimal.

[0052] Optionally, the mapping material layer can be designed according to the structure of the SiPM chip array, that is, the first through-hole positions are cut on the mapping material layer corresponding to the chip positions of the SiPM chip array, and finally all the first through-holes on the mapping material layer correspond to the chip positions of the SiPM chip array, that is, after the processing drawing of the mapping material layer is designed, the mapping material layer can be processed by using a laser cutting machine, and after processing, the size is measured, and the test is satisfied, and the mapping material layer can be used.

[0053] In addition, for the size of the first through-hole, since the first through-hole penetrates the first surface and the second surface of the mapping material layer, the depth of the first through-hole can be the thickness of the mapping material layer. In addition, since the first through-hole can have a cuboid shape, the specific values of the first edge m and the second edge n of the aperture of the first through-hole can be determined according to the size of the chip and the allowed mounting tolerance of the chip of the SiPM chip array. The specific value of the allowed mounting tolerance of the chip of the SiPM chip array can be set according to actual needs (for example, in the case of different precision values, the specific value of the allowed mounting tolerance can also be different, etc.), and the embodiments of the present application are not limited thereto.

[0054] For example, in the case that the first edge m corresponds to the wide edge of the chip of the SiPM chip array, the specific value of the first edge m is the sum of the specific value of the wide edge of the chip of the SiPM chip array and the allowed mounting tolerance of the wide edge of the chip.

[0055] For another example, in the case that the second edge n corresponds to the long edge of the chip of the SiPM chip array, the specific value of the second edge n is the sum of the specific value of the long edge of the chip of the SiPM chip array and the allowed mounting tolerance of the long edge of the chip.

[0056] For another example, in the case that the size of the chip of the SiPM chip array is P, and the tolerance required for the chip mounting precision is Q (in the case of different precision values, the specific value of Q can also be different), the size of the first through-hole on the test tool can be P+Q.

[0057] It should be further pointed out that, in order to fix the base material layer and the mapping material layer together, the base material layer and the mapping material layer can also be bonded together by using an optically transparent adhesive layer, thereby forming the test tool.

[0058] It should be understood that the specific material of the optically transparent adhesive layer and the thickness of the optically transparent adhesive layer can be set according to actual needs, and the embodiments of the present application are not limited thereto.

[0059] Optionally, the optically transparent adhesive layer can be transparent silicone adhesive, and the silicone adhesive has good stability and good cleaning of residual adhesive, and is more suitable for the structure of the test tool.

[0060] In addition, in the process of manufacturing the test tool by the base material, the mapping material and the optically transparent adhesive, first, the four fixed parts of the mapping material can be folded out of trace to be more convenient to be sleeved on the base material layer, then one side of the inside of the mapping material layer can be smeared with the optically transparent adhesive, the mapping material smeared with the optically transparent adhesive is sleeved on the base material, then it is pressed into a back-shaped tool, and the side with the mapping material is placed on a clean and non-adhesive polytetrafluoroethylene material, and then a counterweight is placed on the tool, the purpose is to make the adhesive layer between the mapping material and the base material uniform, the surface of the tool is flat, and the four sides of the test tool are fixed by the back-shaped tool to fix the thickness of the adhesive layer. After the optically transparent adhesive is completely cured, the test tool is pushed out of the back-shaped tool, and the optically transparent adhesive in the first through hole of the mapping material layer is completely cleaned, and then the first through hole is completely exposed, so that the test tool is manufactured.

[0061] In addition, for the manufactured test tool, the test tool can include an optically transparent adhesive layer, and the optically transparent adhesive layer can be arranged between the base material layer and the mapping material layer, and the optically transparent adhesive layer can include a plurality of second through holes penetrating the optically transparent adhesive layer, and each second through hole of the plurality of second through holes corresponds to a first through hole. Wherein, the second through hole and the corresponding first through hole are communicated, and the size of the hole of the second through hole and the size of the hole of the corresponding first through hole are the same and completely coincide.

[0062] Therefore, by means of the above scheme, the embodiment of the present application can greatly reduce the cost of purchasing equipment, the labor cost and the time cost of testing for detecting the mounting precision of the SiPM chip array, and can also quickly and effectively detect the mounting precision of the SiPM chip array, thereby improving the coupling precision of the SiPM detector, and further improving the performance of the SiPM detector.

[0063] It should be understood that the above test tool is only exemplary, and those skilled in the art can make various modifications according to the above method, and the scheme after the modification also belongs to the protection scope of the present application.

[0064] Please see Figure 3 , Figure 3 A flow chart of a method for detecting the mounting precision of the SiPM chip array on the PCB board provided by the embodiment of the present application is shown. As shown in Figure 3The method shown can be performed by a device for detecting the mounting precision of the SiPM chip array on the PCB board, and the specific value of the device can be set according to actual needs, and the embodiments of the present application are not limited thereto. For example, the device can be a computer, a control device, or the like. As shown in Figure 3 The method shown includes:

[0065] In step S310, the SiPM chip array is buckled on the mapping material layer of the test tool for detecting the mounting precision of the SiPM chip array; wherein the test tool can be the test tool for detecting the mounting precision of the SiPM chip array as shown above;

[0066] In step S320, the embedding condition of the chip of the SiPM chip array in the through hole of the test tool is determined through the first light-transmitting surface of the base material layer of the test tool;

[0067] In step S330, the mounting precision of the chip of the SiPM chip array is determined based on the embedding condition.

[0068] In order to facilitate the understanding of the method for detecting the mounting precision of the chip of the SiPM chip array, the following will be described through specific embodiments.

[0069] Specifically, as shown in Figure 4 During the test, the test tool can be placed on the array of the SiPM, and the four edges of the test tool can be completely aligned with the shape of the array of the SiPM, and the position condition of the chip of the SiPM chip array can be observed through the first light-transmitting surface of the base material layer. If all the chips are buckled into the first through hole, it means that all the chips of the SiPM chip array meet the preset mounting precision. If the mounting precision of the chip does not meet the preset mounting precision, the chip of the SiPM chip array cannot be buckled into the first through hole, and the size of the positional displacement and deviation of the chip can also be observed through the first light-transmitting surface of the base material layer. The thickness of the test tool can be H.

[0070] In addition, in addition to detecting the mounting precision of the chip of the SiPM chip array, since the size of the SiPM chip array and the size of the crystal array are one-to-one corresponding, the test tool can also detect the assembly precision of the crystal bar of the crystal array.

[0071] For example, the test tool can be placed on the side of the mapping material on the scintillation crystal, and the four edges of the test tool and the scintillation crystal are aligned, and the corresponding positions of the crystal bars and the through holes of the tool are observed through the first light transmission surface of the base material layer, so as to test the assembly accuracy of each crystal bar. In this way, the accuracy of the crystal bars of the scintillation crystal and the chips of the SiPM chip array can be one-to-one corresponding, and then the SiPM chip array and the crystal array are bonded in 1:1 coupling, the coupling accuracy of the SiPM chip array detector is further improved, and the performance of the detector is improved.

[0072] Therefore, by means of the above technical solutions, the mounting accuracy of the chips of the SiPM chip array can be quickly, conveniently and simply detected by the above test method, without using high-precision large test equipment, and without too much labor cost and time cost. At the same time, the coupling accuracy of the SiPM chip array and the scintillation crystal can be improved, and the performance index of the detector is improved.

[0073] It should be understood that the above method for detecting the mounting accuracy of the chips of the SiPM chip array is only exemplary, and those skilled in the art can make various modifications according to the above method, and the modified scheme also belongs to the protection scope of the present application.

[0074] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system or a computer program product. Therefore, the present application can be in the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can be in the form of a computer program product implemented on one or more computer usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer usable program code.

[0075] The present application is described with reference to flowcharts and / or block diagrams of methods, devices (systems) and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of the flows and / or blocks in the flowcharts and / or block diagrams can be realized by computer program instructions.

[0076] It should be noted that the description uses the term "comprising" not to mean "consisting only of" but to mean "including, permitting also of". It should be noted that in the claims the word "comprising" does not exclude other elements or steps than the ones stated in a claim. The word "a" preceding an element does not exclude the presence of a plurality of such elements. It should be noted that the word "one", "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. It should be noted that the word "first", "second" and the like used in the description does not necessarily mean the same. It is meant that the features can be first, second, third and the like in some order within each embodiment. The above specifications are summarised by the following statements:

[0077] Furthermore, it is noted that the specification can make reference to "an" or "some" embodiments, which necessarily means at least one, and that a particular feature, structure, or characteristic described in relation to an embodiment can be combined with one or more other features, structures or characteristics from the same or another embodiment(s). The following statements apply mutatis mutandis to the terms "comprising", "containing", "having", "including", "carrying", "substantially", "mainly", "primarily", "essentially" and "approximately" as they appear herein.

[0078] Although the preferred embodiments of the application have been described, those skilled in the art will recognize that many modifications and variations of the described implementation can be made without departing from the spirit or scope of the application. Accordingly, it is to be understood that the application is not to be limited by the preferred embodiments described above. Rather, the specification is to serve as a single exemplification of the application, and multiple changes and modifications can be made which are or can be apparent to those skilled in the art, once given this disclosure.

[0079] Obviously, many modifications and variations of the present application are possible in light of the above teachings. It is, therefore, to be understood that within the scope of the appended claims and their equivalents, the application can be practiced otherwise than as specifically described.

Claims

1. A measurement tool for detecting SiPM chip array mounting precision, characterized in that, The SiPM chip array is mounted on a PCB board, and the SiPM chip array comprises a plurality of chips; the measuring tool comprises: The base material layer comprises a first light-transmitting surface and a second light-transmitting surface arranged oppositely, and four side surfaces arranged between the first light-transmitting surface and the second light-transmitting surface; The mapping material layer includes a detection part and four fixed parts fixedly connected with the detection part. The detection part is provided with a plurality of first through holes for communicating a first surface and a second surface of the mapping material layer. Each of the plurality of first through holes corresponds to a chip. The second surface is fixedly connected with the second light-transmitting surface except for an aperture area of the plurality of first through holes. Each of the four fixed parts is fixedly connected with a side surface. The size of the first through hole is the sum of the size of the chip and the allowed mounting tolerance of the chip of the SiPM chip array. The size a of the mapping material layer is consistent with the length of the SiPM chip array. The size b of the mapping material layer is consistent with the width of the SiPM chip array. The SiPM chip array is matched with the outer dimension of the measurement tool. ​​ The width of the base material layer is determined by the width of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer; the length of the base material layer is determined by the length of the SiPM chip array, the thickness of the mapping material layer and the thickness of the optical transparent adhesive layer; wherein the optical transparent adhesive layer is arranged between the base material layer and the mapping material layer.

2. The measurement tool of claim 1, wherein, The base material layer is composed of acrylic material or quartz glass.

3. The measurement tool of claim 1, wherein, The optical transparent adhesive layer comprises a plurality of second through holes penetrating through the optical transparent adhesive layer, and each second through hole in the plurality of second through holes corresponds to a first through hole.

4. The measuring tool of claim 1 or 3, wherein, The thickness of the base material layer ranges from 5 to 10 millimeters.

5. The measurement tool of claim 1, wherein, The thickness of the mapping material layer ranges from 100 to 600 micrometers.

6. The measurement tool of claim 1, wherein, The mapping material layer is composed of an ESR film or a polytetrafluoroethylene reflective film.

7. A method for detecting SiPM chip array mounting precision on a PCB board, characterized in that, Comprise: The SiPM chip array is buckled on the mapping material layer of the measuring tool for detecting the mounting precision of the SiPM chip array; wherein the measuring tool is any one of the measuring tools for detecting the mounting precision of the SiPM chip array as claimed in claims 1 to 6; The embedding condition of the chips of the SiPM chip array in the through holes of the measuring tool is determined through the first light-transmitting surface of the base material layer of the measuring tool; The mounting precision of the chips of the SiPM chip array is determined based on the embedding condition.

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