Geological exploration sensor device and method of manufacturing thereof

Abstract

The present application provides a geological exploration sensor device and a manufacturing method thereof, the device comprising: a control chip, a first sealing layer having a convex part and a flat part, a wiring layer on the first sealing layer, a sensor chip bonded to the wiring layer by a first solder ball, and a second sealing layer covering at least the side surface and the upper surface of the sensor chip. The present application first bonds the sensor chip and the control chip, then performs secondary packaging together, and finally bonds the cover plate, so that the electrical transmission path of the sensor chip and the control chip is the shortest, and the flexibility of electrical bonding is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor chip packaging, and in particular to a geological exploration sensor device and a manufacturing method thereof. BACKGROUND

[0002] Geological exploration often needs to use sensors (such as photoelectric sensors) to explore and detect geology. However, the existing photoelectric sensor package usually sets a cofferdam around the sensing area of the sensor, and then bonds a cover glass on the cofferdam, so as to realize the protection of the sensing area and the full light incidence. However, in order to control the sensor, it is often necessary to further bond the sensor to a control chip, and the existing technology adopts two ways to achieve this: one is to bond the above-mentioned sensor chip with cover glass and cofferdam to a circuit board and a control chip functional module; the other is to flip or wire bond a control chip under the sensor. The sensor device formed by the two methods has poor sealing, large volume, and complex packaging process. SUMMARY

[0003] Based on solving the above problems, the present application provides a manufacturing method of a geological exploration sensor device, which comprises:

[0004] (1) fixing a control chip on a temporary carrier, and forming a first sealing layer on the temporary carrier, the first sealing layer covering the control chip, and a protruding portion is formed at the position corresponding to the control chip, the height of the protruding portion is greater than the flat portion at other positions of the first sealing layer;

[0005] (2) forming a plurality of first conductive vias in the protruding portion to electrically connect the control chip, and forming a wiring layer on the first sealing layer, the wiring layer extending from the upper surface of the protruding portion to the upper surface of the flat portion, and the wiring layer is electrically connected to the first conductive vias; wherein the wiring layer has a plurality of first pads on the upper surface of the flat portion;

[0006] (3) providing a sensor chip, the non-active surface of the sensor chip has a plurality of first solder balls, and the plurality of first solder balls are respectively bonded to the plurality of first pads;

[0007] (4) forming a second sealing layer on the first sealing layer, the second sealing layer covering at least the side surface and the upper surface of the sensor chip, and the second sealing layer has a height higher than the upper surface of the active surface of the sensor chip;

[0008] (5) forming a support ring on the active surface in the second sealing layer, the lower surface of the support ring is flush with the active surface, and the upper surface of the support ring is flush with the upper surface of the second sealing layer;

[0009] (6) bonding a cover plate on the second sealing layer.

[0010] As preferred, further comprising step (7), removing the temporary carrier, forming a plurality of second conductive vias through the first sealing layer and electrically connected to the wiring layer, and bonding a plurality of second solder balls on the lower surface of the first sealing layer to electrically connect the second conductive vias.

[0011] As preferred, the wiring layer has a plurality of second pads on the upper surface of the flat portion, the plurality of first pads and the plurality of second pads are arranged staggered in horizontal direction, and the second conductive vias are electrically connected to the second pads.

[0012] As preferred, in step (3), providing a sensor chip specifically comprises:

[0013] (31) bonding a plurality of first solder balls on the non-active surface of the sensor chip;

[0014] (32) providing an adhesive material on the middle region of the non-active surface of the sensor chip;

[0015] (33) bonding a plurality of first solder balls on a plurality of first pads respectively, while the adhesive material is adhered to the upper surface of the protruding portion.

[0016] As preferred, the height difference between the protruding portion and the flat portion is h, and the height of the first solder ball is greater than h.

[0017] According to the above manufacturing method, the present application further discloses a geological exploration sensor device, which comprises:

[0018] a control chip;

[0019] a first sealing layer covering the control chip, the upper surface of the first sealing layer having a protruding portion formed corresponding to the position of the control chip, the height of the protruding portion being greater than the flat portion at other positions of the first sealing layer;

[0020] a plurality of first conductive vias formed in the protruding portion and electrically connected to the control chip;

[0021] a wiring layer formed on the first sealing layer, the wiring layer extending from the upper surface of the protruding portion to the upper surface of the flat portion, and the wiring layer electrically connected to the first conductive vias; wherein the wiring layer has a plurality of first pads on the upper surface of the flat portion;

[0022] a sensor chip, the non-active surface of the sensor chip having a plurality of first solder balls, the plurality of first solder balls being bonded on a plurality of first pads respectively;

[0023] a second sealing layer formed on the first sealing layer, the second sealing layer covering at least the side surface and the upper surface of the sensor chip, the second sealing layer having an upper surface higher than the active surface of the sensor chip;

[0024] a support ring formed in the second sealing layer and located on the active surface, a lower surface of the support ring being flush with the active surface, an upper surface of the support ring being flush with the upper surface of the second sealing layer;

[0025] a cover plate bonded to the second sealing layer.

[0026] As preferred, a plurality of second conductive vias and a plurality of second solder balls are further included, the plurality of second conductive vias penetrating through the first sealing layer and electrically connected to the wiring layer, the plurality of second solder balls bonded to the lower surface of the first sealing layer and electrically connected to the second conductive vias.

[0027] As preferred, the wiring layer has a plurality of second pads located on the upper surface of the flat portion, the plurality of first pads and the plurality of second pads being staggered in the horizontal direction, and the second conductive vias being electrically connected to the second pads.

[0028] As preferred, an adhesive material is further included, the adhesive material being formed in the middle region of the non-active surface of the sensor chip, the adhesive material being bonded to the upper surface of the protruding portion.

[0029] As preferred, the height difference between the protruding portion and the flat portion is h, and the height of the first solder ball is greater than h.

[0030] Advantages of the present application are as follows:

[0031] 1. The present application first bonds the sensor chip and the control chip, then performs secondary packaging together, and finally bonds the cover plate, so that the electrical transmission path of the sensor chip and the control chip is the shortest, and the flexibility of electrical bonding is realized.

[0032] 2. The first sealing layer of the present application has a protruding portion corresponding to the middle region of the non-active surface of the sensor chip, which supports a plurality of first solder balls and ensures that the aspect ratio of the first solder balls is large.

[0033] 3. The first sealing layer has a protruding portion, which also supports the sensor chip, so that the plurality of first solder balls are separated, and the miniaturization of the stacked sensor chip and control chip is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 a schematic view after forming the first sealing layer of the control chip on the temporary carrier;

[0035] Figure 2 schematic diagram after forming the first conductive via and the wiring layer;

[0036] Figure 3 schematic diagram for pre-electrically connecting the sensor chip and the control chip;

[0037] Figure 4 schematic diagram after electrically connecting the sensor chip and the control chip;

[0038] Figure 5 schematic diagram after forming the second sealing layer and the support ring;

[0039] Figure 6 schematic diagram after bonding the cover plate;

[0040] Figure 7 schematic diagram after removing the temporary plate and forming the second conductive via and the second solder ball. DETAILED DESCRIPTION

[0041] In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some but not all of the embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort belong to the scope of protection of the present disclosure.

[0042] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meaning commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The terms "include", "contain", and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "upper", "lower", "left", "right", and the like are used only to represent relative positional relationships, and when the absolute positions of the described objects are changed, the relative positional relationships may also be changed accordingly.

[0043] Based on the technical problem of the present application, the present application provides a manufacturing method of a geological exploration sensor device, which comprises:

[0044] (1) fixing a control chip on a temporary carrier plate, and forming a first sealing layer on the temporary carrier plate, the first sealing layer covering the control chip, and a protruding portion is formed at a position corresponding to the control chip, the height of the protruding portion is greater than the flat portion at other positions of the first sealing layer;

[0045] (2) forming a plurality of first conductive vias in the protruding portion to electrically connect the control chip, and forming a wiring layer on the first sealing layer, the wiring layer extending from the upper surface of the protruding portion to the upper surface of the flat portion, and the wiring layer electrically connecting the first conductive vias; wherein the wiring layer has a plurality of first pads on the upper surface of the flat portion;

[0046] (3) providing a sensor chip, the non-active surface of the sensor chip has a plurality of first solder balls, the plurality of first solder balls are respectively bonded to the plurality of first pads;

[0047] (4) forming a second sealing layer on the first sealing layer, the second sealing layer covering at least the side surface and the upper surface of the sensor chip, the second sealing layer having a height higher than the upper surface of the active surface of the sensor chip;

[0048] (5) forming a support ring on the active surface in the second sealing layer, the lower surface of the support ring is flush with the active surface, and the upper surface of the support ring is flush with the upper surface of the second sealing layer;

[0049] (6) bonding a cover plate on the second sealing layer.

[0050] Firstly referring to Figure 1 , a temporary carrier plate 10 is provided, which is a plate-shaped rigid carrier plate, for example, can be a glass substrate, a silicon substrate or a stainless steel plate, etc. The temporary carrier plate 10 can also have a release film (not shown), and a control chip 11 is fixed on the release film of the temporary carrier plate 10. The control chip 11 can be a power control chip, a PWM control chip or a rectifier control chip, etc. The control chip 11 can be fixed by an adhesive layer, and the upper surface of the control chip 11 has a plurality of electrodes 12.

[0051] Then, a film layer hot pressing method is used to laminate a first sealing layer 13 on the temporary carrier plate 10, the first sealing layer 13 is a resin material, for example, can be a thermosetting resin or a photocurable resin. The thickness of the first sealing layer 13 is greater than the thickness of the control chip 11, and the first sealing layer 13 covers the control chip 11, and a protruding portion is formed at a position corresponding to the control chip 11, the height of the protruding portion is greater than the flat portion at other positions of the first sealing layer 13, as shown in Figure 1 , the height difference between the protruding portion and the flat portion is h.

[0052] In the top view, the protrusion of the first sealing layer 13 is located in the middle of the first sealing layer 13, which forms a step with the flat part, and the first sealing layer 13 is heated to form a gradual curved structure of the step.

[0053] Referring to Figure 2 , a plurality of through holes corresponding to the electrodes 12 are formed in the protrusion of the first sealing layer 13 by etching or laser ablation, and then a conductive material is filled in the through holes to form a plurality of first conductive vias 14. One end of the first conductive via 14 is electrically connected to the electrode 12, and the other end of the first conductive via 14 is exposed from the upper surface of the protrusion.

[0054] Further, a wiring layer 15 is deposited and patterned on the first sealing layer 13, the wiring layer 15 extends from the upper surface of the protrusion to the upper surface of the flat part, and the wiring layer 15 is electrically connected to the first conductive via 14. The first end of the wiring layer 15 is connected to the first conductive via 14, and the second end of the wiring layer 15 extends to the flat part and has a plurality of first pads 16 and a plurality of second pads 17 on the upper surface of the flat part. In particular, the plurality of first pads and the plurality of second pads 17 are arranged in a staggered manner in the horizontal direction, which can prevent stress concentration.

[0055] Referring to Figure 3 , an optoelectronic sensor chip used in geological exploration is provided, which can be a CMOS sensor chip. The sensor chip 18 includes opposite active and non-active surfaces, a plurality of first solder balls 19 are provided on the non-active surface, and the plurality of first solder balls 19 are provided in the peripheral region of the non-active surface. And the middle region of the non-active surface is also provided with an adhesive material 20, which can be an electrically insulating material, such as adhesive glue, etc.

[0056] The non-active surface of the sensor chip 18 is opposite to the upper surface of the first sealing layer 13, and is pressed and heated, so that the adhesive material 20 is adhered to the protrusion, and the first solder balls 19 are reflow soldered on the plurality of first pads 17 to realize the electrical contact between the sensor chip 18 and the control chip 11. As Figure 4 shown, due to the presence of the protrusion, the plurality of first solder balls 19 can ensure a larger height after reflow, improve the aspect ratio, and ensure that the height of the plurality of first solder balls 19 after reflow is similar.

[0057] Referring to Figure 5A second sealing layer 21 is formed to cover the first sealing layer 13, the wiring layer 15 and the sensor chip 18. The material of the second sealing layer 21 can be the same as that of the first sealing layer 13 to ensure that the thermal expansion coefficients are matched with each other. The second sealing layer 21 covers at least the side surface and the upper surface of the sensor chip 18, and has an upper surface higher than the active surface of the sensor chip 18.

[0058] A support ring 22 is then formed in the second sealing layer 21 and on the active surface. The support ring 22 is made of a resin material with black dye. The lower surface of the support ring 22 is flush with the active surface, and the upper surface of the support ring 22 is flush with the upper surface of the second sealing layer 21. The flushness can be achieved by a CMP method.

[0059] Referring to Figure 6 A cover plate 23 is bonded on the second sealing layer 21. The cover plate 23 is made of transparent glass material and is used to protect the sealing layer and the internal chip. It can be suitable for harsh exploration conditions.

[0060] Finally, referring to Figure 7 The temporary carrier 10 is removed, and a plurality of through holes are drilled from the lower surface of the first sealing layer 13 to the second pads 17 by etching or laser ablation process. The through holes are filled with conductive material to form a plurality of second conductive vias 24. The second conductive vias 24 are electrically connected to the control chip through the second pads 17 and the wiring layer 15. Finally, a plurality of second solder balls 25 are formed by ball placement. The second solder balls 25 are respectively electrically connected to the second conductive vias 24.

[0061] The connection positions of the wiring layer 15, the first conductive vias 14, the first solder balls 19 and the second conductive vias 24 are all staggered in the horizontal direction. In this way, stress concentration can be prevented, the wiring layer 15 can be prevented from being broken, and electrical connection reliability can be ensured.

[0062] According to the above method and Figures 1 to 7 A geological exploration sensor device is formed according to the above method and specifically includes: a control chip;

[0063] A first sealing layer covers the control chip. The first sealing layer has a protruding portion formed on the upper surface thereof corresponding to the position of the control chip. The height of the protruding portion is greater than that of the flat portion at other positions of the first sealing layer.

[0064] A plurality of first conductive vias are formed in the protruding portion and electrically connected to the control chip.

[0065] A wiring layer is formed on the first sealing layer, the wiring layer extends from the upper surface of the protruding portion to the upper surface of the flat portion, and the wiring layer is electrically connected to the first conductive via; wherein the wiring layer has a plurality of first pads on the upper surface of the flat portion;

[0066] A sensor chip, the non-active surface of the sensor chip has a plurality of first solder balls, the plurality of first solder balls are respectively bonded to the plurality of first pads;

[0067] A second sealing layer is formed on the first sealing layer, the second sealing layer covers at least the side surface and the upper surface of the sensor chip, and the second sealing layer has a height higher than the upper surface of the active surface of the sensor chip;

[0068] A support ring is formed in the second sealing layer and located on the active surface, the lower surface of the support ring is flush with the active surface, and the upper surface of the support ring is flush with the upper surface of the second sealing layer;

[0069] A cover plate is bonded to the second sealing layer.

[0070] Further, a plurality of second conductive vias and a plurality of second solder balls are further included, the plurality of second conductive vias penetrate the first sealing layer and are electrically connected to the wiring layer, and the plurality of second solder balls are bonded to the lower surface of the first sealing layer and electrically connected to the second conductive vias.

[0071] Further, the wiring layer has a plurality of second pads on the upper surface of the flat portion, the plurality of first pads and the plurality of second pads are arranged in a staggered manner in the horizontal direction, and the second conductive vias are electrically connected to the second pads.

[0072] Further, an adhesive material is further included, the adhesive material is formed in the middle region of the non-active surface of the sensor chip, and the adhesive material is bonded to the upper surface of the protruding portion.

[0073] Further, the height difference between the protruding portion and the flat portion is h, and the height of the first solder ball is greater than h.

[0074] The sensor chip and the control chip are first bonded, then the secondary packaging is performed together, and finally the cover plate is bonded, so that the electrical transmission path of the sensor chip and the control chip is the shortest, and the flexibility of electrical bonding is realized. Further, the first sealing layer has a protruding portion corresponding to the middle region of the non-active surface of the sensor chip, which is used to support the plurality of first solder balls and ensure that the aspect ratio of the first solder balls is large. The first sealing layer has a protruding portion, which can also support the sensor chip. This way can not only separate the plurality of first solder balls, but also ensure the miniaturization of the stacked sensor chip and control chip.

[0075] It should be noted that the above-mentioned embodiments are merely intended for the purpose of illustration, and are not intended to limit the embodiments. Based on the above descriptions, those skilled in the art can further make other variations and changes to the embodiments. Here, it is not necessary or possible to enumerate all the embodiments. The obvious variations and changes derived therefrom are still within the protection scope of the present application.

Claims

1. A method for manufacturing a geological exploration sensor device, comprising: (1) Fixing a control chip on a temporary carrier and forming a first sealing layer on the temporary carrier, wherein the first sealing layer covers the control chip and forms a raised portion at a position corresponding to the control chip, wherein the height of the raised portion is greater than the flat portion at other positions of the first sealing layer; (2) forming a plurality of first conductive vias in the raised portion to electrically connect the control chip, and forming a wiring layer on the first sealing layer, the wiring layer extending from the upper surface of the raised portion to the upper surface of the flat portion and electrically connecting the first conductive vias; wherein the wiring layer has a plurality of first pads located on the upper surface of the flat portion; (3) providing a sensor chip, wherein the inactive surface of the sensor chip has a plurality of first solder balls, and the plurality of first solder balls are respectively bonded to the plurality of first solder pads; (4) forming a second sealing layer on the first sealing layer, wherein the second sealing layer covers at least the side surfaces and the upper surface of the sensor chip, and the second sealing layer has an upper surface higher than the active surface of the sensor chip; (5) forming a support ring in the second sealing layer and located on the active surface, wherein the lower surface of the support ring is flush with the active surface, and the upper surface of the support ring is flush with the upper surface of the second sealing layer; (6) bonding a cover plate to the second sealing layer; (7) The temporary carrier is removed, a plurality of second conductive vias are formed that penetrate the first sealing layer and are electrically connected to the wiring layer, and a plurality of second solder balls are bonded to the lower surface of the first sealing layer to electrically connect the second conductive vias.

2. The method for manufacturing a geological exploration sensor device according to claim 1, wherein: The wiring layer has a plurality of second pads on the upper surface of the flat portion, the plurality of first pads and the plurality of second pads are staggered in a horizontal direction, and the second conductive via is electrically connected to the second pads.

3. The method for manufacturing a geological exploration sensor device according to claim 2, wherein: In step (3), providing the sensor chip specifically includes: (31) bonding a plurality of first solder balls to the inactive surface of the sensor chip; (32) providing an adhesive material in a middle region of the inactive surface of the sensor chip; (33) The plurality of first solder balls are bonded to the plurality of first solder pads respectively, and at the same time, the adhesive material is bonded to the upper surface of the protrusion.

4. The method for manufacturing a geological exploration sensor device according to claim 1, wherein: A height difference between the protruding portion and the flat portion is h, and a height of the first solder ball is greater than h.

5. A geological exploration sensor device comprising: Control chip; a first sealing layer covering the control chip, wherein the upper surface of the first sealing layer has a raised portion formed corresponding to the position of the control chip, and the height of the raised portion is greater than the flat portion at other positions of the first sealing layer; a plurality of first conductive vias formed in the raised portion and electrically connected to the control chip; a wiring layer formed on the first sealing layer, the wiring layer extending from the upper surface of the raised portion to the upper surface of the flat portion, and the wiring layer electrically connected to the first conductive via; wherein the wiring layer has a plurality of first pads located on the upper surface of the flat portion; A sensor chip, wherein the inactive surface of the sensor chip has a plurality of first solder balls, and the plurality of first solder balls are respectively bonded to the plurality of first solder pads; a second sealing layer formed on the first sealing layer, the second sealing layer covering at least the side surfaces and the upper surface of the sensor chip, the second sealing layer having an upper surface higher than the active surface of the sensor chip; a support ring formed in the second sealing layer and located on the active surface, wherein the lower surface of the support ring is flush with the active surface, and the upper surface of the support ring is flush with the upper surface of the second sealing layer; a cover plate, bonded to the second sealing layer; It also includes a plurality of second conductive vias and a plurality of second solder balls, wherein the plurality of second conductive vias penetrate the first sealing layer and are electrically connected to the wiring layer, and the plurality of second solder balls are bonded to the lower surface of the first sealing layer and are electrically connected to the second conductive vias.

6. The geological prospecting sensor device according to claim 5, characterized in that: The wiring layer has a plurality of second pads on the upper surface of the flat portion, the plurality of first pads and the plurality of second pads are staggered in a horizontal direction, and the second conductive via is electrically connected to the second pads.

7. The geological prospecting sensor device according to claim 6, characterized in that: The sensor chip further includes an adhesive material formed in a middle region of the inactive surface of the sensor chip, and the adhesive material is adhered to the upper surface of the protrusion.

8. The geological prospecting sensor device according to claim 5, characterized in that: A height difference between the protruding portion and the flat portion is h, and a height of the first solder ball is greater than h.

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