Solar cell

Abstract

The present application provides a solar cell having a light-transmitting region, and comprising a substrate, a photoelectric conversion structure, a metal conductive layer, and a light-blocking structure. The photoelectric conversion structure is disposed around the light-transmitting region, and comprises a first electrode layer, a photoelectric conversion layer, and a second electrode layer disposed in sequence on the substrate. The metal conductive layer is disposed around the photoelectric conversion structure. A first gap is provided between the metal conductive layer and the photoelectric conversion structure. The light-blocking structure completely covers the first gap. The light-blocking structure has a first color-adjusting layer and a reflective layer stacked with each other. The first color-adjusting layer is located between the substrate and the reflective layer. The material of the first color-adjusting layer comprises one of molybdenum oxide and molybdenum nitride. The material of the reflective layer comprises a molybdenum-tantalum alloy.

Description

TECHNICAL FIELD

[0001] The present application relates to a solar cell, and in particular to a solar cell with a light-transmissive region. BACKGROUND

[0002] With the vigorous development of display technology, the application of display is becoming more and more widespread. In addition to high-specification display quality, the display of the concept of sustainable development such as power saving and environmental protection is also one of the development priorities of related manufacturers. Since solar cells are environmentally friendly green energy indicators, the demand for applying solar power technology to wearable display devices to improve their operation endurance is gradually increasing. In order to avoid the display quality degradation of the display panel caused by the stacking of the thin-film solar panel, the thin-film solar panel in the display area of the display panel must have a certain degree of penetration and photoelectric conversion area to achieve the effects of display and solar power generation.

[0003] Such thin-film solar panels mostly have a plurality of solar cell traces arranged periodically in the display area, and transmission lines are provided around the display area to transmit the electrical energy generated by the solar cell traces to the energy storage element. In order to ensure that the two parts in the transmission line that are respectively electrically connected to the positive and negative electrodes of the solar cell traces can be electrically separated, a gap is generally provided between the two parts. Therefore, light from the display panel can pass through the gap to form light leakage, and such solar panels will produce inconsistent appearance color problems under the irradiation of ambient light, affecting the overall visual quality. SUMMARY

[0004] The present application is directed to a solar cell with better visual effect.

[0005] According to an embodiment of the present application, a solar cell has a light-transmissive region, and includes a substrate, a photoelectric conversion structure, a metal conductive layer, and a light-blocking structure. The photoelectric conversion structure is disposed around the light-transmissive region, and includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer disposed in sequence on the substrate. The metal conductive layer is disposed around the photoelectric conversion structure. A first gap is provided between the metal conductive layer and the photoelectric conversion structure. The light-blocking structure completely covers the first gap. The light-blocking structure has a first color adjustment layer and a reflective layer stacked with each other. The first color adjustment layer is located between the substrate and the reflective layer. The material of the first color adjustment layer includes one of molybdenum oxide and molybdenum nitride. The material of the reflective layer includes a molybdenum-tantalum alloy.

[0006] In the solar cell according to the embodiment of the present application, the light-blocking structure further has a second color adjustment layer disposed between the substrate and the reflective layer, and the material of the second color adjustment layer includes the other one of molybdenum oxide and molybdenum nitride.

[0007] In a solar cell according to an embodiment of the present application, the metal conductive layer includes a first transmission line and a second transmission line electrically separated from each other and arranged around the photoelectric conversion structure. The first transmission line is electrically connected to the first electrode layer. The second transmission line is electrically connected to the second electrode layer.

[0008] In a solar cell according to an embodiment of the present application, the metal conductive layer further includes a ring-shaped electrode extending from the first transmission line and overlapping the photoelectric conversion structure, and a first gap is provided between the ring-shaped electrode and the second transmission line.

[0009] In a solar cell according to an embodiment of the present application, a light-blocking structure is arranged on the metal conductive layer. The light-blocking structure directly contacts one of the ring-shaped electrode and the second transmission line, and is electrically separated from the other one of the ring-shaped electrode and the second transmission line.

[0010] In a solar cell according to an embodiment of the present application, the photoelectric conversion structure is divided into a first portion and a second portion. A second gap is provided between the first portion and the second portion, and the light-blocking structure further covers the second gap.

[0011] In a solar cell according to an embodiment of the present application, the light-blocking structure is located between the first electrode layer and the substrate, and partially overlaps the first electrode layer. An insulating layer is provided between the first electrode layer and the light-blocking structure.

[0012] In a solar cell according to an embodiment of the present application, the light-blocking structure is arranged on the photoelectric conversion structure, and covers a sidewall of the photoelectric conversion structure defining the first gap. An insulating layer is provided between the photoelectric conversion structure and the light-blocking structure.

[0013] In a solar cell according to an embodiment of the present application, the light-blocking structure is arranged on the metal conductive layer. The metal conductive layer has an opening overlapping the first gap. The light-blocking structure completely covers the opening, and an insulating layer is provided between the metal conductive layer and the light-blocking structure.

[0014] In a solar cell according to an embodiment of the present application, the light-blocking structure is arranged between the metal conductive layer and the photoelectric conversion structure, and is electrically insulated from the metal conductive layer and the photoelectric conversion structure.

[0015] Based on the above, in a solar cell according to an embodiment of the present application, a first gap is provided between the metal conductive layer arranged around the photoelectric conversion structure and the photoelectric conversion structure. By covering this first gap with the light-blocking structure, in addition to solving the problem of light leakage in display applications, the phenomenon of inconsistent appearance color of the solar cell under light irradiation can also be effectively improved, thereby improving the overall visual effect of the solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0016] FIG. 1A is a top view schematic diagram of a solar cell according to a first embodiment of the present application;

[0017] FIG. 1B is a cross-sectional view of a solar cell according to a further variant embodiment of the application; FIG. 1A

[0018] FIG. 2 is a cross-sectional view of a solar cell according to the application; FIG. 1A

[0019] FIG. 3 is a partial enlarged view of a solar cell according to the application; FIG. 2

[0020] FIG. 4A is a graph of the reflectivity versus wavelength of the reflective layer according to the application; FIG. 3

[0021] FIG. 4B is a graph of the reflectivity versus wavelength of the first color filter layer according to the application; FIG. 3

[0022] FIG. 4C is a graph of the reflectivity versus wavelength of the second color filter layer according to the application; FIG. 3

[0023] FIG. 5A to FIG. 5C is a cross-sectional view of a shading structure according to further variant embodiments of the application;

[0024] FIG. 6 is a cross-sectional view of a solar cell according to a second embodiment of the application;

[0025] FIG. 7 is a cross-sectional view of a solar cell according to a third embodiment of the application;

[0026] FIG. 8 is a cross-sectional view of a solar cell according to a fourth embodiment of the application;

[0027] FIG. 9 is a cross-sectional view of a solar cell according to a fifth embodiment of the application;

[0028] FIG. 10 is a cross-sectional view of a solar cell according to a sixth embodiment of the application;

[0029] FIG. 11 is a top view of a solar cell according to a seventh embodiment of the application;

[0030] FIG. 12 is a cross-sectional view of a solar cell according to the application; FIG. 11

[0031] FIG. 13 is a top view of a solar cell according to an eighth embodiment of the application.​​​​​​​

[0032] Reference Signs List

[0033] 10, 10A, 10B, 10C, 10D, 10E, 10F, 20, 20A: solar cell

[0034] 100: substrate

[0035] 110, 110A, 110B, 110C: photoelectric conversion structure

[0036] 110C1: first portion

[0037] 110C2: second portion

[0038] 110S, DMs: side wall

[0039] 111: first extrinsic semiconductor layer

[0040] 112: intrinsic semiconductor layer

[0041] 113: second extrinsic semiconductor layer

[0042] 120, 120A, 120B: metal conductive layer

[0043] 120OP, OP: opening

[0044] 121, 121A: first transmission line

[0045] 122, 122A: second transmission line

[0046] 123, 123A: ring electrode

[0047] 130, 130A, 130B1, 130B2, 130B3, 130C, 130D, 130E, 130F, 130G, 130H: light shielding structure

[0048] 131: reflection layer

[0049] 133, 135: color adjustment layer

[0050] 150, 160, 160A, 160B, 160C, 160D: insulating layer

[0051] 150a, 150b: contact hole

[0052] DM, DM-A: dummy photoelectric conversion structure

[0053] EL1, EL1A, EL1B, EL1d: first electrode layer

[0054] EL1p, EL2p: protrusion

[0055] EL2, EL2A, EL2B, EL2d: second electrode layer

[0056] G1a, G1b, G1c, G2a, G2b: gap

[0057] PCL: photoelectric conversion layer

[0058] TA: transmittance area

[0059] Z: direction

[0060] A-A', B-B', C-C', D-D', E-E', F-F': section line

[0061] I: region DETAILED DESCRIPTION

[0062] Reference will now be made in detail to the exemplary embodiments of the present application, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and the description to refer to the same or like parts.

[0063] The above and other technical contents, features and effects of the present application will be apparent from the following detailed description of a preferred embodiment, given by way of example, in conjunction with the accompanying drawings. Directional terms used in the following embodiments, such as upper, lower, left, right, front or rear, etc., are used with reference to the directions of the accompanying drawings. Thus, the used directional terms are used to illustrate, not to limit the present application.

[0064] FIG. 1A is a top view schematic diagram of a solar cell according to a first embodiment of the present application. FIG. 1B is a top view schematic diagram of a solar cell according to another variant embodiment of the present application. FIG. 1A is a top view schematic diagram of a solar cell according to another variant embodiment of the present application. FIG. 2 is a sectional view schematic diagram of a solar cell according to the present application. FIG. 1A is a sectional view schematic diagram of a solar cell according to the present application. FIG. 2 corresponds to section lines A-A', B-B' and C-C' of FIG. 1A FIG. 3 is a partial enlarged view schematic diagram of a solar cell according to the present application. FIG. 2 is a partial enlarged view schematic diagram of a solar cell according to the present application. FIG. 3 corresponds to a partial region I of FIG. 2 FIG. 4A is a graph of reflectance versus wavelength of a reflective layer according to the present application. FIG. 3 is a graph of reflectance versus wavelength of a first color adjustment layer according to the present application. FIG. 4B is a graph of reflectance versus wavelength of a second color adjustment layer according to the present application. FIG. 3 is a graph of reflectance versus wavelength of a second color adjustment layer according to the present application. FIG. 4C is a graph of reflectance versus wavelength of a second color adjustment layer according to the present application. FIG. 3 is a graph of reflectance versus wavelength of a second color adjustment layer according to the present application. FIG. 5A to FIG. 5C ​​is a cross-sectional view of a light shielding structure according to another variant embodiment of the present application.

[0065] Please refer to FIG. 1A and FIG. 2 The solar cell 10 has a light-transmitting area TA and includes a substrate 100 and a photoelectric conversion structure 110. The substrate 100 is made of glass, quartz, a polymer material (e.g., polyimide, polycarbonate), or another suitable substrate material. The photoelectric conversion structure 110 is disposed around the light-transmitting area TA and includes a first electrode layer EL1, a photoelectric conversion layer PCL, and a second electrode layer EL2. The first electrode layer EL1 is disposed on the substrate 100. The photoelectric conversion layer PCL is disposed on the first electrode layer EL1. The second electrode layer EL2 is disposed on the photoelectric conversion layer PCL. More specifically, the first electrode layer EL1 and the second electrode layer EL2 are disposed on opposite sides of the photoelectric conversion layer PCL and electrically connect the photoelectric conversion layer PCL.

[0066] In this embodiment, the solar cell 10 is adapted to receive ambient light (e.g., sunlight) from outside from a side of the substrate 100 opposite the photoelectric conversion structure 110, so the first electrode layer EL1 and the second electrode layer EL2 are a light-transmitting electrode and a reflective electrode, respectively. The light-transmitting electrode is made of a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or another suitable oxide, or a stack of at least two of the foregoing. The reflective electrode is made of aluminum, silver, chromium, an alloy of the foregoing, a combination of the foregoing, or another metal material having a high reflectivity.

[0067] The photoelectric conversion layer PCL is made of amorphous silicon (a-Si), but is not limited thereto. In other embodiments, the photoelectric conversion layer PCL can be made of single-crystal silicon, polycrystalline silicon, copper indium gallium selenide, cadmium antimonide, or a combination of the foregoing. In detail, the photoelectric conversion layer PCL includes a first extrinsic semiconductor layer 111, an intrinsic semiconductor layer 112, and a second extrinsic semiconductor layer 113. The first extrinsic semiconductor layer 111 has a first doping type, the second extrinsic semiconductor layer 113 has a second doping type, and the first and second doping types are each one of P-type and N-type. For example, in this embodiment, the first extrinsic semiconductor layer 111 can be a P-type semiconductor layer, and the second extrinsic semiconductor layer 113 can be an N-type semiconductor layer.

[0068] In particular, the second electrode layer EL2 of the photoelectric conversion structure 110 can define a light-transmitting area TA of the solar cell 10, which is adapted to allow light (e.g., sunlight or light from a display panel) to pass through. In the present embodiment, the solar cell 10 can be applied to a wearable display device (e.g., a smart watch), and the display device can display information (e.g., time, date, message notification, etc.) through the light-transmitting area TA. For example, in order to increase the light-receiving area of the solar cell 10, the solar cell 10 can further include a plurality of solar cell traces (not shown) arranged in the light-transmitting area TA and spaced apart from each other. These solar cell traces can extend from the photoelectric conversion structure 110 surrounding the light-transmitting area TA. That is, the stacked structure of these solar cell traces located in the light-transmitting area TA and the structure of the photoelectric conversion structure 110 can optionally be the same.

[0069] In the present embodiment, the solar cell 10 can further include a dummy photoelectric conversion structure DM. The dummy photoelectric conversion structure DM has the same stacked structure and composition as the photoelectric conversion structure 110 (i.e., can be made of the same film layers), but is electrically separated from each other. For example, the second electrode layer EL2d of the dummy photoelectric conversion structure DM and the second electrode layer EL2 of the photoelectric conversion structure 110 (or the first electrode layer EL1d of the dummy photoelectric conversion structure DM and the first electrode layer EL1 of the photoelectric conversion structure 110) are each electrically independent, and the second electrode layer EL2d of the dummy photoelectric conversion structure DM can have a floating potential, but is not limited thereto.

[0070] In order to transmit the electrical signal generated by the photoelectric conversion structure 110 and the solar cell traces in the light-transmitting area TA when irradiated by light to an energy storage element or a display element, the solar cell 10 further includes a metal conductive layer 120, and a gap G1a is provided between the metal conductive layer 120 and the photoelectric conversion structure 110. In the present embodiment, the second electrode layer EL2 of the photoelectric conversion structure 110 and the second electrode layer EL2d of the dummy photoelectric conversion structure DM can define the gap G1a. However, the present application is not limited thereto. According to other embodiments, the gap G1a can also be defined by the portion of the metal conductive layer 120 surrounding the photoelectric conversion structure 110 and the photoelectric conversion structure 110.

[0071] For example, in the present embodiment, the metal conductive layer 120 includes a first transmission line 121 and a second transmission line 122 which are electrically separated from each other and arranged around the photoelectric conversion structure 110. The first transmission line 121 is electrically connected to the first electrode layer EL1 of the photoelectric conversion structure 110, and the second transmission line 122 is electrically connected to the second electrode layer EL2 of the photoelectric conversion structure 110. That is, the first transmission line 121 and the second transmission line 122 are used to transmit electric signals of different polarities, for example, the first transmission line 121 is used to transmit positive signals from the first extrinsic semiconductor layer 111, and the second transmission line 122 is used to transmit negative signals from the second extrinsic semiconductor layer 113.

[0072] In the present embodiment, the metal conductive layer 120 also optionally includes a ring-shaped electrode 123 which extends from the first transmission line 121 and overlaps the photoelectric conversion structure 110. Here, the overlapping relationship means that the projections of the two components along the direction perpendicular to the substrate 100 (for example, the direction Z) overlap each other. If not specifically mentioned below, the overlapping relationship between any two components is defined in this way, and will not be repeated here. In detail, an insulating layer 150 can also be provided between the metal conductive layer 120 and the photoelectric conversion structure 110, the first transmission line 121 can be electrically connected to the first electrode layer EL1 through a plurality of contact holes 150a of the insulating layer 150, and the second transmission line 122 can be electrically connected to the second electrode layer EL2 through a contact hole 150b of the insulating layer 150. In the present embodiment, the photoelectric conversion layer PCL and the second electrode layer EL2 of the photoelectric conversion structure 110 can have a plurality of openings OP, the insulating layer 150 is filled in the openings OP, and a plurality of contact holes 150a are arranged to overlap the openings OP respectively to expose part of the surface of the first electrode layer EL1.

[0073] In order to ensure that the first transmission line 121 and the second transmission line 122 are electrically separated, gaps G1b and G1c are also provided between the two transmission lines, and a gap G1a is provided between the second transmission line 122 and the ring-shaped electrode 123. Therefore, the solar cell 10 of the present disclosure also includes a light shielding structure 130 for shielding these gaps. For example, the light shielding structure 130 completely covers the gaps G1a, G1b and G1c along the direction Z. In this way, the light leakage problem caused by the design of these gaps can be solved when the solar cell is applied to a display device.

[0074] Please refer to FIG. 3The light-shielding structure 130 is, for example, a stacked structure of a reflective layer 131 and at least one color-tuning layer, wherein the color-tuning layer is disposed between the reflective layer 131 and the substrate 100. The material of the reflective layer 131 includes molybdenum-tantalum alloy (MoTa). The material of the color-tuning layer includes molybdenum oxide (MoOx) or molybdenum nitride (MoNx). Preferably, the film thickness of the reflective layer 131 can be between 100 nm and 2000 nm. The film thickness of the color-tuning layer can be between 5 nm and 100 nm.

[0075] For example, in the present embodiment, the number of color-tuning layers of the light-shielding structure 130 is two, which are color-tuning layer 133 and color-tuning layer 135, wherein the color-tuning layer 133 is disposed between the color-tuning layer 135 and the reflective layer 131. It is particularly noted that the material of one of the two color-tuning layers can be molybdenum oxide, and the material of the other can be molybdenum nitride, for example: the color-tuning layer 133 and the color-tuning layer 135 are made of molybdenum oxide and molybdenum nitride, respectively.

[0076] Please refer to FIG. 4A to FIG. 4C The reflectivity of the reflective layer 131 for visible light (for example, light with a wavelength between 400 nm and 700 nm) is greater than 46% (as shown in FIG. 4A The reflectivity of the color-tuning layer 133 made of molybdenum oxide for visible light decreases with increasing wavelength (as shown in FIG. 4B On the contrary, the reflectivity of the color-tuning layer 135 made of molybdenum nitride for visible light increases with increasing wavelength (as shown in FIG. 4C That is, the color-tuning layer 133 of the present embodiment is suitable for reflecting short-wavelength visible light (such as blue light and violet light), and the color-tuning layer 135 is suitable for reflecting long-wavelength visible light (such as red light and green light).

[0077] It is particularly noted that the rate of change of reflectivity of the color-tuning layer with respect to wavelength changes with different film thicknesses. For example: the rate of change of reflectivity of the color-tuning layer 133 made of molybdenum oxide with respect to wavelength decreases with increasing film thickness of the color-tuning layer 133 (as shown in FIG. 4B On the contrary, the rate of change of reflectivity of the color-tuning layer 135 made of molybdenum nitride with respect to wavelength increases with increasing film thickness of the color-tuning layer 135 (as shown in FIG. 4C

[0078] Therefore, by designing the number of layers, materials, and film thicknesses of the color-tuning layers, the reflection spectrum of the light-shielding structure 130 can be changed to be close to the reflection spectrum of the photoelectric conversion structure 110, so as to effectively improve the problem of inconsistent appearance color of the solar cell under ambient light irradiation. In other words, the chromaticity difference of light after reflection through the photoelectric conversion structure 110 and the light-shielding structure 130 can be reduced, which helps to improve the overall visual effect of the solar cell 10.

[0079] ​It is particularly noted that the present application does not limit the layering order of the color-tuning layer 133 and the color-tuning layer 135. For example, in another embodiment, the color-tuning layer 135 made of molybdenum nitride can be arranged between the color-tuning layer 133 made of molybdenum oxide and the reflective layer 131 (as shown in the light-shielding structure 130B1 of FIG. 5A . On the other hand, the present application also does not limit the number of color-tuning layers. In yet another embodiment, the number of color-tuning layers can be one, such as the color-tuning layer 133 made of molybdenum oxide (as shown in the light-shielding structure 130B2 of FIG. 5B ) or the color-tuning layer 135 made of molybdenum nitride (as shown in the light-shielding structure 130B3 of FIG. 5C ).

[0080] Please continue to refer to FIG. 2 , in the present embodiment, the light-shielding structure 130 is optionally arranged between the first electrode layer EL1 and the substrate 100, and partially overlaps the first electrode layer EL1 of the photoelectric conversion structure 110 and the first electrode layer EL1d of the dummy photoelectric conversion structure DM. In order to avoid electrical connection between the first electrode layer EL1 of the photoelectric conversion structure 110, the first electrode layer EL1d of the dummy photoelectric conversion structure DM, and the light-shielding structure 130, the solar cell 10 can further include an insulating layer 160 covering the light-shielding structure 130. The material of the insulating layer 160 includes silicon nitride (SiNx), and the film thickness can be between 10 nm and 2000 nm.

[0081] In the present embodiment, the orthographic projection profile of the first transmission line 121, the second transmission line 122, and the ring-shaped electrode 123 of the metal conductive layer 120, the photoelectric conversion structure 110, the dummy photoelectric conversion structure DM, and the light-shielding structure 130 on the substrate 100 is, for example, a circular arc shape, but is not limited thereto. In another embodiment, the orthographic projection profile of the first transmission line 121A, the second transmission line 122A, and the ring-shaped electrode 123A of the metal conductive layer 120A of the solar cell 10A, the photoelectric conversion structure 110A, the dummy photoelectric conversion structure DM-A, and the light-shielding structure 130A on the substrate 100 can also be a rectangular shape (as shown in FIG. 1B ).

[0082] Some other embodiments will be listed below to explain the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. Please refer to the foregoing embodiments for the omitted parts, which will not be described again.

[0083] FIG. 6 is a cross-sectional schematic view of a solar cell according to a second embodiment of the present application. Please refer to FIG. 6 , the solar cell 10B of the present embodiment is similar to the solar cell 10 of the first embodiment, and the same components will be marked with the same symbols, and the description of the same technical content will be omitted. The differences between the solar cell 10B and the solar cell 10 will be described below. FIG. 2The difference in the solar cell 10 lies in the configuration of the light-shielding structure film layer. In this embodiment, the light-shielding structure 130C of the solar cell 10B is disposed between the photoelectric conversion structure 110 and the metal conductive layer 120. More specifically, the light-shielding structure 130C is disposed on the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM, and covers the sidewalls 110s and DMs of the gap G1a defined by the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM.

[0084] To avoid electrical connections between the first electrode layer EL1 and the second electrode layer EL2 of the photoelectric conversion structure 110, the first electrode layer EL1d and the second electrode layer EL2d of the dummy photoelectric conversion structure DM, and the light-shielding structure 130C, the insulating layer 160A of the solar cell 10B is relocated between the light-shielding structure 130C, the photoelectric conversion structure 110, and the dummy photoelectric conversion structure DM. Since the detailed composition of the light-shielding structure 130C and the resulting technical effects are similar to those in this embodiment... FIG. 3 The light-shielding structure 130 is described in detail in the relevant paragraphs of the foregoing embodiments, and will not be repeated here.

[0085] FIG. 7 This is a cross-sectional schematic diagram of a solar cell according to a third embodiment of the present invention. FIG. 8 This is a cross-sectional schematic diagram of a solar cell according to the fourth embodiment of the present invention. Please refer to... FIG. 7 The solar cell 10C in this embodiment and FIG. 2 The difference between the solar cells 10 and 10C lies in the configuration of the light-shielding structure. In this embodiment, the light-shielding structure 130D of the solar cell 10C is disposed on the insulating layer 150 and completely covers the opening 120OP in the metal conductive layer 120 that overlaps with the gap G1a. In this embodiment, the light-shielding structure 130D also covers part of the annular electrode 123 and part of the second transmission line 122 of the metal conductive layer 120. To avoid electrical connection between the annular electrode 123 (or the first transmission line), the second transmission line 122, and the light-shielding structure 130D of the metal conductive layer 120, the insulating layer 160B of the solar cell 10C is disposed between the light-shielding structure 130D and the metal conductive layer 120.

[0086] However, the present invention is not limited thereto. According to other embodiments, the light-shielding structure 130E (or insulating layer 160C) of the solar cell 10D, in addition to completely covering the opening 120OP of the metal conductive layer 120, may only cover the annular electrode 123 of the metal conductive layer 120, and not cover the second transmission line 122, as shown below. FIG. 8As shown. That is, the light-shielding structure 130E can be asymmetrically distributed relative to the opening 120OP. It is easy to understand that, in an embodiment not shown, the light-shielding structure may only cover the opening 120OP of the metal conductive layer 120 and the second transmission line 122, and not cover the annular electrode 123.

[0087] because FIG. 7 The light-shielding structure 130D and FIG. 8 The light-shielding structures of the 130E are similar in their detailed components and the resulting technical effects. FIG. 3 The light-shielding structure 130 is described in detail in the relevant paragraphs of the foregoing embodiments, and will not be repeated here.

[0088] FIG. 9 This is a cross-sectional schematic diagram of a solar cell according to the fifth embodiment of the present invention. Please refer to... FIG. 9 In this embodiment, although the light-shielding structure 130F is like FIG. 6 The light-shielding structure 130C is disposed between the photoelectric conversion structure 110 and the metal conductive layer 120. However, the difference is that in this embodiment, the light-shielding structure 130F is disposed on the insulating layer 150 and partially overlaps with a portion of the annular electrode 123 and a portion of the second transmission line 122 (or the first transmission line) of the metal conductive layer 120. To avoid electrical connection between the annular electrode 123 (or the first transmission line), the second transmission line 122, and the light-shielding structure 130F of the metal conductive layer 120, the insulating layer 160D of the solar cell 10E is disposed between the light-shielding structure 130F and the metal conductive layer 120. That is, the light-shielding structure 130F is electrically insulated from the metal conductive layer 120 and the photoelectric conversion structure 110.

[0089] Since the detailed composition and the resulting technical effects of the light-shielding structure 130F in this embodiment are similar to those of other embodiments, the overall structure is similar to the structure in this embodiment. FIG. 3 The light-shielding structure 130 is described in detail in the relevant paragraphs of the foregoing embodiments, and will not be repeated here.

[0090] FIG. 10 This is a cross-sectional schematic diagram of a solar cell according to the sixth embodiment of the present invention. Please refer to... FIG. 10 In this embodiment, the solar cell 10F and FIG. 8 The difference between solar cell 10D and solar cell 10F is that the light-shielding structure 130G of solar cell 10F does not completely cover the opening 120OP of the metal conductive layer 120, but still completely covers the gap G1a (or) between the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM. FIG. 1A (Gap G1b and gap G1c). Since the detailed composition of the light-shielding structure 130G in this embodiment and the resulting technical effects are similar to those in other embodiments, the light-shielding structure 130G in this embodiment is similar to the light-shielding structure 130G in other embodiments. FIG. 3The light-shielding structure 130 is described in detail in the relevant paragraphs of the foregoing embodiments, and will not be repeated here.

[0091] It is particularly noteworthy that, since the two orthographic projections of the light-shielding structure 130G and the second transmission line 122 of the metal conductive layer 120 on the substrate 100 are separated from each other, even if there is no such feature between the light-shielding structure 130G and the annular electrode 123... FIG. 8 The insulating layer 160C still ensures electrical separation between the annular electrode 123 (or the first transmission line 121) and the second transmission line 122. Therefore, the light-shielding structure 130G also reduces the overall impedance of the annular electrode 123. It is readily understood that, in an embodiment not shown, the light-shielding structure may also contact the second transmission line 122 and be separated from the annular electrode 123 to reduce the overall impedance of the second transmission line 122.

[0092] FIG. 11 This is a top view schematic diagram of a solar cell according to the seventh embodiment of the present invention. FIG. 12 yes FIG. 11 A cross-sectional schematic diagram of a solar cell. FIG. 12 Corresponding to FIG. 11 Sections D-D', E-E', and F-F'. Please refer to... FIG. 11 and FIG. 12 In this embodiment, the metal conductive layer 120B of the solar cell 20 does not have the annular electrode 123 as shown in FIG. 1. The first electrode layer EL1A of the photoelectric conversion structure 110B has a protrusion EL1p extending toward the first transmission line 121, and the first transmission line 121 is electrically connected to the first electrode layer EL1A via this protrusion EL1p. The second electrode layer EL2A of the photoelectric conversion structure 110B has a protrusion EL2p extending toward the second transmission line 122, and the second transmission line 122 is electrically connected to the second electrode layer EL2A via this protrusion EL2p.

[0093] Since the detailed composition of the light-shielding structure 130 in this embodiment and the resulting technical effects are the same as those in this embodiment, FIG. 3 The light-shielding structure 130 is described in detail in the relevant paragraphs of the foregoing embodiments, and will not be repeated here.

[0094] FIG. 13 This is a top view schematic diagram of a solar cell according to the eighth embodiment of the present invention. Please refer to... FIG. 13 In this embodiment, the solar cell 20A and FIG. 11The solar cell 20A is different from the solar cell 20 in that the photoelectric conversion structure is designed differently. In the present embodiment, the photoelectric conversion structure 110C of the solar cell 20A can be divided into a first portion 110C1 and a second portion 110C2, and there are gaps G2a and G2b between the first portion 110C1 and the second portion 110C2. The two gaps are, for example, defined by the second electrode layer EL2B of the first portion 110C1 and the second electrode layer EL2B of the second portion 110C2. Therefore, the light shielding structure 130H of the present embodiment further covers the gaps G2a and G2b to solve the light leakage problem caused by the gaps and the problem of inconsistent appearance color of the solar cell.

[0095] In the present embodiment, the first portion 110C1 and the second portion 110C2 of the photoelectric conversion structure 110C can be connected in series with each other, for example, the second electrode layer EL2B of the first portion 110C1 can be electrically connected to the first electrode layer of the second portion 110C2, the first transmission line 121 is electrically connected to the first electrode layer EL1B of the first portion 110C1, and the second transmission line 122 is electrically connected to the second electrode layer EL2B of the second portion 110C2.

[0096] In summary, in the solar cell of an embodiment of the present application, the metal conductive layer arranged around the photoelectric conversion structure and the photoelectric conversion structure are provided with a first gap. By covering the first gap with the light shielding structure, in addition to solving the light leakage problem in display applications, the phenomenon of inconsistent appearance color of the solar cell under light irradiation can also be effectively improved, thereby improving the overall visual effect of the solar cell.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent replacements to some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A solar cell, characterized by, A light-transmitting region is provided, and includes: a substrate; a photoelectric conversion structure disposed around the light-transmitting region and including: a first electrode layer disposed on the substrate; a photoelectric conversion layer disposed on the first electrode layer; and a second electrode layer disposed on the photoelectric conversion layer; a metal conductive layer disposed around the photoelectric conversion structure and including a first transmission line and a second transmission line that are electrically separated from each other and disposed around the photoelectric conversion structure, wherein a portion of the second transmission line of the metal conductive layer has a first gap between a projection of the photoelectric conversion structure on the substrate and a projection of the metal conductive layer on the substrate, the first transmission line is electrically connected to the first electrode layer, and another portion of the second transmission line is electrically connected to the second electrode layer; and a light-shielding structure completely covering the first gap, the first gap being located within a projection of the light-shielding structure on the substrate, the light-shielding structure having a first color adjustment layer and a reflection layer stacked on each other, the first color adjustment layer being located between the substrate and the reflection layer, a material of the first color adjustment layer including one of molybdenum oxide and molybdenum nitride, and a material of the reflection layer including a molybdenum-tantalum alloy.

2. The solar cell according to claim 1, characterized in that, The light-shielding structure further has a second color adjustment layer disposed between the substrate and the reflection layer, a material of the second color adjustment layer including the other of molybdenum oxide and molybdenum nitride.

3. The solar cell according to claim 1, characterized in that, The metal conductive layer further includes a ring-shaped electrode extending from the first transmission line and overlapping the photoelectric conversion structure, and the ring-shaped electrode and the second transmission line have the first gap therebetween.

4. The solar cell according to claim 3, characterized in that, The light-shielding structure is disposed on the metal conductive layer, directly contacts one of the ring-shaped electrode and the second transmission line, and is electrically separated from the other of the ring-shaped electrode and the second transmission line.

5. The solar cell of claim 1, wherein The photoelectric conversion structure is divided into a first portion and a second portion, the first portion and the second portion having a second gap therebetween, and the light-shielding structure further covers the second gap.

6. The solar cell of claim 1, wherein The light-shielding structure is located between the first electrode layer and the substrate, and partially overlaps the first electrode layer, the first electrode layer and the light-shielding structure having an insulating layer therebetween.

7. The solar cell of claim 1, wherein The light-shielding structure is disposed on the photoelectric conversion structure, and covers a sidewall of the photoelectric conversion structure defining the first gap, the photoelectric conversion structure and the light-shielding structure having an insulating layer therebetween.

8. The solar cell of claim 1, wherein, The light-shielding structure is disposed on the metal conductive layer, the metal conductive layer having an opening overlapping the first gap, the light-shielding structure completely covering the opening, and the metal conductive layer and the light-shielding structure having an insulating layer therebetween.

9. The solar cell of claim 1, wherein, The light-shielding structure is disposed between the metal conductive layer and the photoelectric conversion structure, and is electrically insulated from the metal conductive layer and the photoelectric conversion structure.

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