A single event effect sensitive area determination method and system

Abstract

The application provides a single particle effect sensitive area determination method and system, which comprises the following steps: using a heavy ion microbeam to perform point-by-point scanning on a semiconductor device to be tested, and drawing a single particle effect sensitive area plan according to the point-by-point scanning result; calculating the surface area of the single particle effect sensitive area based on the single particle effect sensitive area plan, simultaneously obtaining a three-dimensional numerical simulation model constructed based on the semiconductor device to be tested in advance or in real time, and determining the depth of the single particle effect sensitive area based on the three-dimensional numerical simulation model; and finally combining the surface area and the depth of the single particle effect sensitive area to obtain the single particle effect sensitive area of the semiconductor device to be tested. Therefore, the surface area and the depth of the single particle effect sensitive area of the semiconductor to be tested can be determined. The application alleviates the problem of shortage and high cost of heavy ion experimental machines through a numerical simulation method, greatly improves experimental efficiency, and saves experimental cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method and system for determining the sensitive region of single-event effects. Background Technology

[0002] In recent years, human activities in outer space have become increasingly frequent, and various space missions have become more complex and diverse. Space electronic systems are a key component in ensuring the smooth operation of space missions; therefore, their high reliability and long-life operation in the space environment have become a major concern in the field.

[0003] The space environment contains a large number of charged particles, such as heavy ions, protons, and electrons, which can induce radiation effects in semiconductor devices within electronic systems, leading to a series of performance degradations and functional abnormalities. The Single Event Effect (SEE) is one of the main radiation effects threatening aerospace electronic systems. When a single high-energy charged particle enters a semiconductor device, it generates a high density of electron-hole pairs along its incident trajectory due to strong ionization. When the particle's trajectory passes through the device's sensitive volume (SV), these charges can be rapidly collected by the device. When the charge collection caused by the incident particle is sufficiently large, it can cause instantaneous disturbances, logic state flips, functional interruptions, and even irreversible damage such as latch-up and burnout, posing a significant threat to the reliable operation of aerospace electronic systems. Therefore, obtaining accurate dimensions of the sensitive volume, including its area and depth, is crucial for correctly calculating the charge collection caused by single-event incident particles and is of great significance for assessing the SEE sensitivity of electronic devices and predicting on-orbit failure probabilities.

[0004] Single-event effect charge collection mechanisms include drift collection and diffusion collection. When excess charge carriers deposited by charged particles are located in the applied electric field within the device (such as the depletion layer electric field of a PN junction), the charge carriers will rapidly drift to the collection node under the influence of the electric field. Conversely, when excess charge carriers deposited by charged particles are located in regions of the device with no electric field or low electric field strength (such as the substrate), the charge carriers are transported to the collection node through diffusion driven by the concentration gradient. In practice, due to factors such as device structure and track length, single-event effect charge collection often involves both collection mechanisms simultaneously. The presence of diffusion collection means that the geometry of the sensitive region does not completely follow the predetermined PN junction and depletion region boundaries, but extends to a relatively distant location within the substrate, making the determination of the size of the single-event effect sensitive region extremely complex. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a method and system for determining the sensitive region of single-event effect, so as to solve the problem that the sensitive region of single-event effect cannot be clearly and accurately determined in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a method for determining the sensitive region of a single-event effect, comprising the following steps:

[0007] A heavy ion microbeam is used to scan the semiconductor device under test point by point, and a planar map of the single-event effect sensitive area is plotted based on the point-by-point scanning results; wherein, the semiconductor device under test includes: bare die and semiconductor devices that have passed electrical parameter testing;

[0008] Calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view;

[0009] A three-dimensional numerical simulation model based on the semiconductor device under test is obtained in advance or in real time, and the depth of the single-event effect sensitive region is determined based on the three-dimensional numerical simulation model.

[0010] The surface area and depth of the single-event effect sensitive region are combined to obtain the single-event effect sensitive region of the semiconductor device under test.

[0011] Optionally, the process of determining the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model includes:

[0012] The three-dimensional numerical simulation model is calibrated using the test results of the electrical parameters of the semiconductor under test to obtain the first simulation model;

[0013] The first simulation model is subjected to single-event effect numerical simulation, and the first simulation model after the single-event effect numerical simulation is calibrated using the point-by-point scan results to obtain the second simulation model.

[0014] By setting different substrate thicknesses in the second simulation model, a third simulation model is obtained;

[0015] The third simulation model was subjected to single-event effect numerical simulation to obtain the charge collection amount under different substrate thicknesses;

[0016] Based on the charge collection amount under different substrate thicknesses, a curve showing the relationship between charge collection amount and substrate thickness was plotted, and the substrate thickness value at which the charge collection amount reaches saturation was extracted from the curve as the depth of the single-event effect sensitive region.

[0017] Optionally, the process of acquiring the semiconductor device under test includes:

[0018] Obtain raw semiconductor devices, either pre-provided or provided in real-time, for determining the sensitive region of single-event effects;

[0019] The front-side package of the original semiconductor device is removed using chemical etching or laser etching to expose the die of the original semiconductor device.

[0020] Electrical parameters are tested on the raw semiconductor device with the die exposed, and the raw semiconductor device that passes the electrical parameter test is used as the semiconductor device under test.

[0021] Optionally, the process of using a heavy ion microbeam to perform point-by-point scanning of the semiconductor device under test and drawing a planar map of the single-event effect sensitive region based on the point-by-point scanning results includes:

[0022] The semiconductor device under test is fixed on a two-dimensional moving platform, and the semiconductor device under test is scanned point by point using a heavy ion microbeam, and the coordinate position of each scanning point is recorded.

[0023] The single-event transient current at each coordinate position is obtained, and the single-event transient current at each coordinate position is integrated over time to obtain the corresponding single-event effect charge collection amount.

[0024] Calculate the average value of the single-event effect charge collection at each coordinate location, and draw a planar map of the single-event effect sensitive region based on the average value.

[0025] Optionally, when using a heavy ion microbeam to perform point-by-point scanning of the semiconductor device under test, the beam spot area of ​​the heavy ion microbeam is smaller than the active region area of ​​the semiconductor device under test.

[0026] Optionally, when using a heavy ion microbeam to perform point-by-point scanning of the semiconductor device under test, the point-by-point scanning area of ​​the heavy ion microbeam includes all regions on the semiconductor device under test that can generate single-event effects.

[0027] Optionally, when using a heavy ion microbeam to perform point-by-point scanning of the semiconductor device under test, the incident direction of the heavy ion microbeam is perpendicular to the surface of the semiconductor device under test.

[0028] Optionally, when performing single-event effect numerical simulation on the first simulation model and the third simulation model, the incident direction of the radiating particles is perpendicular to the surface of the semiconductor device under test.

[0029] Optionally, when performing single-event effect numerical simulation on the third simulation model, the track length of the radiated particle is greater than the substrate thickness in the third simulation model.

[0030] The present invention also provides a system for determining the sensitive region of a single-event effect, the system comprising:

[0031] The planar mapping module is used to perform point-by-point scanning of the semiconductor device under test using a heavy ion microbeam and to draw a planar map of the single-event effect sensitive area based on the point-by-point scanning results; wherein, the semiconductor device under test includes: bare die and semiconductor devices that have passed electrical parameter testing;

[0032] The surface area module is used to calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view.

[0033] The depth module is used to acquire a three-dimensional numerical simulation model built in advance or in real time based on the semiconductor device under test, and to determine the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model.

[0034] The module combines the surface area and depth of the single-event effect sensitive region to obtain the single-event effect sensitive region of the semiconductor device under test.

[0035] As described above, this invention provides a method and system for determining single-event effect sensitive regions, which has the following beneficial effects: First, this invention uses a heavy-ion microbeam to scan the semiconductor device under test point by point. Then, a planar map of the single-event effect sensitive region is drawn based on the point-by-point scanning results. Next, the surface area of ​​the single-event effect sensitive region is calculated based on the planar map, and simultaneously, a three-dimensional numerical simulation model constructed in advance or in real-time based on the semiconductor device under test is obtained. The depth of the single-event effect sensitive region is determined based on the three-dimensional numerical simulation model. Finally, the surface area and depth of the single-event effect sensitive region are combined to obtain the single-event effect sensitive region of the semiconductor device under test. The semiconductor device under test includes: exposed die and semiconductor devices that have passed electrical parameter testing. Therefore, this invention, by scanning the device with a heavy-ion microbeam, can obtain point-by-point information on the single-event sensitivity of different regions, thereby accurately identifying the surface area of ​​the sensitive region. Compared to pulsed laser microbeam irradiation, this invention uses heavy ions, which can better penetrate the top-layer metal wiring and active region of the device and reach deep into the substrate. Therefore, for electronic devices with multilayer metal wiring, the results obtained from heavy ion microbeam experiments are more accurate than those from pulsed laser microbeam experiments. This invention performs two calibrations on the three-dimensional numerical simulation model using electrical parameter test results and heavy ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. Based on the calibrated three-dimensional numerical simulation model, this invention determines the depth of the sensitive region and then flexibly sets the substrate thickness, effectively considering the expansion of the sensitive region caused by the collection of diffused charges in lightly doped substrates. Furthermore, the numerical simulation method alleviates the problems of time shortage and high cost in heavy ion experiments, significantly improving experimental efficiency and saving experimental costs. Attached Figure Description

[0036] Figure 1 This is a flowchart illustrating a method for determining the sensitive region of a single-event effect according to an embodiment of the present invention.

[0037] Figure 2 This is a planar view of the single-event effect sensitive region of the device obtained in one embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram comparing the numerical simulation results and measured results of the bipolar transistor Gummel characteristics in one embodiment of the present invention;

[0039] Figure 4 This is a schematic diagram comparing the numerical simulation results of the single-event effect of a bipolar transistor with the experimental results of a heavy ion microbeam in one embodiment of the present invention;

[0040] Figure 5 This is a schematic diagram of the relationship between charge collection amount and substrate thickness in one embodiment of the present invention;

[0041] Figure 6 This is a flowchart illustrating a method for determining the sensitive region of a single-event effect according to another embodiment of the present invention.

[0042] Figure 7 This is a schematic diagram of the hardware structure of a single-event effect sensitive region determination system provided in one embodiment of the present invention. Detailed Implementation

[0043] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0044] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0045] Heavy ions are atomic nuclei with a mass number greater than 4, that is, ions after helium in the periodic table (atoms with atomic numbers greater than 2 that have lost electrons). Examples include carbon-12, neon-22, calcium-45, iron-56, krypton-84, and uranium-238.

[0046] Please see Figure 1As shown, this embodiment provides a method for determining the sensitive region of a single-event effect, including the following steps:

[0047] S110, a heavy-ion microbeam is used to scan the semiconductor device under test point by point, and a planar map of the single-event effect sensitive region is drawn based on the point-by-point scanning results; wherein, the semiconductor device under test includes: a bare die and a semiconductor device that has passed electrical parameter testing. As an example, in this embodiment, the process of obtaining the semiconductor device under test includes: obtaining a raw semiconductor device provided in advance or in real time for determining the single-event effect sensitive region; removing the front-side package of the raw semiconductor device using chemical etching or laser etching to expose the die of the raw semiconductor device; performing electrical parameter testing on the raw semiconductor device with the exposed die, and using the raw semiconductor device that passes the electrical parameter testing as the semiconductor device under test.

[0048] S120, Calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view;

[0049] S130: Obtain a three-dimensional numerical simulation model pre-constructed or in real-time based on the semiconductor device under test, and determine the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model. As an example, in this embodiment, the process of determining the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model includes: calibrating the three-dimensional numerical simulation model using the electrical parameter test results of the semiconductor device under test to obtain a first simulation model; performing single-event effect numerical simulation on the first simulation model, and calibrating the first simulation model after completing the single-event effect numerical simulation using the point-by-point scan results to obtain a second simulation model; setting different substrate thicknesses in the second simulation model to obtain a third simulation model; performing single-event effect numerical simulation on the third simulation model to obtain the charge collection amount under different substrate thicknesses; plotting the relationship curve between charge collection amount and substrate thickness based on the charge collection amount under different substrate thicknesses, and extracting the substrate thickness value when the charge collection amount reaches saturation from the relationship curve as the depth of the single-event effect sensitive region. Wherein, after the first calibration of the three-dimensional numerical simulation model using the electrical parameter test results of the semiconductor device under test, the calibration result is as follows: Figure 3 As shown. After calibrating the first simulation model following the single-event effect numerical simulation using the point-by-point scan results, the calibration results are as follows. Figure 4 As shown. As an example, in this embodiment, when setting different substrate thicknesses in the second simulation model, the settings can be adjusted according to actual conditions. For example, substrate thicknesses can be set sequentially from smallest to largest: 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm. In this embodiment, the relationship between charge collection and substrate thickness is shown in the curve. Figure 5 As shown in the curve, the substrate thickness at which the charge collection reaches saturation is the depth of the single-event effect sensitive region.

[0050] S140, combine the surface area and depth of the single-event effect sensitive region to obtain the single-event effect sensitive region of the semiconductor device under test.

[0051] Therefore, this embodiment uses heavy-ion microbeams to scan the device, obtaining point-by-point information on the single-particle sensitivity of different regions, thus accurately identifying the surface area of ​​sensitive regions. Compared to pulsed laser microbeam irradiation, heavy ions in this embodiment can better penetrate the top-layer metal wiring and active region of the device and reach deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained from heavy-ion microbeam experiments are more accurate than those from pulsed laser microbeam experiments. This embodiment performs two calibrations on the three-dimensional numerical simulation model using electrical parameter test results and heavy-ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. Based on the calibrated three-dimensional numerical simulation model, this embodiment determines the depth of the sensitive region and flexibly sets the substrate thickness, well considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. In addition, the numerical simulation method alleviates the problems of time shortage and high cost of heavy-ion experiments, greatly improving experimental efficiency and saving experimental costs.

[0052] In an exemplary embodiment, the process of using a heavy-ion microbeam to perform point-by-point scanning of the semiconductor device under test and drawing a planar map of the single-event effect sensitive region based on the point-by-point scanning results includes: fixing the semiconductor device under test to a two-dimensional moving platform, and using a heavy-ion microbeam to perform point-by-point scanning of the semiconductor device under test, recording the coordinate position of each scanning point; acquiring the single-event transient current at each coordinate position, and performing time integration on the single-event transient current at each coordinate position to obtain the corresponding single-event effect charge collection amount; calculating the average value of all single-event effect charge collection amounts at each coordinate position, and drawing a planar map of the single-event effect sensitive region based on the average value. As an example, this embodiment can use a vertical bipolar transistor device with an exposed die and having passed electrical parameter testing as the semiconductor device under test, then fix it on a two-dimensional moving platform, use a 110MeV Cl-ion microbeam to perform point-by-point scanning of its die, and record the coordinate position of each scanning point. The single-event transient current at each coordinate position is recorded using an oscilloscope, and the transient current is integrated over time to obtain the single-event effect charge collection amount. Then, the average value of the single-event effect charge collection amount at each coordinate position is calculated, and a planar diagram of the single-event effect sensitive region is drawn based on the average value. The single-event effect sensitive region planar diagram drawn in this embodiment is as follows: Figure 2 As shown. In Figure 2In the diagram, Q100 represents a region with a charge collection of 0 pC; Q200 represents a region with a charge collection greater than 0 pC and less than or equal to 0.25 pC; Q300 represents a region with a charge collection greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents a region with a charge collection greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents a region with a charge collection greater than 0.75 pC and less than or equal to 1 pC; Q600 represents a region with a charge collection greater than 1 pC and less than or equal to 1.25 pC; Q700 represents a region with a charge collection greater than 1.25 pC and less than or equal to 1.5 pC; and Q800 represents a region with a charge collection greater than 1.5 pC.

[0053] In some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the beam spot area of ​​the heavy ion microbeam is smaller than the active region area of ​​the semiconductor device under test. Furthermore, in some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the point-by-point scanning region includes all regions on the semiconductor device under test capable of generating single-event effects. Simultaneously, in some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the incident direction of the heavy ion microbeam is perpendicular to the surface of the semiconductor device under test.

[0054] In one exemplary embodiment, when performing single-event effect numerical simulations on the first simulation model and the third simulation model, the incident direction of the radiating particles is perpendicular to the surface of the semiconductor device under test. Furthermore, in some exemplary embodiments, when performing single-event effect numerical simulations on the third simulation model, the track length of the radiating particles is greater than the substrate thickness in the third simulation model. As an example, the radiating particles in this embodiment can be heavy ions, or they can be alpha particles, protons, neutrons, or electrons, etc. Alpha particles are particles emitted during the decay of certain radioactive materials (e.g., uranium, radium, or some artificial nuclides), consisting of two neutrons and two protons (helium-4), with a mass four times that of a hydrogen atom, and carrying a positive charge.

[0055] In a specific example, taking a vertical bipolar transistor device as the original semiconductor device, the present invention also provides a method for determining the single-event effect sensitive region, such as... Figure 6 As shown, it includes the following steps:

[0056] I. Preprocessing.

[0057] 1.1) Provide a semiconductor device for determining the size of the sensitive region;

[0058] 1.2) Remove the front-side package of the semiconductor device described in step 1.1) to completely expose the die. As an example, this embodiment can use chemical etching or laser etching to remove the front-side package of the device. For example, chemical etching can be used to remove the front-side package of the semiconductor device described in step 1.1).

[0059] 1.3) Perform electrical parameter tests on the devices obtained in step 1.2) and screen out failed devices;

[0060] 2. Determine the surface area of ​​the single-event effect sensitive region.

[0061] 2.1) The pre-processed device obtained in step 1.3) is scanned point-by-point using a heavy-ion microbeam, with the heavy-ion incident direction perpendicular to the device surface. The position coordinates and charge collection amount of each scan point are recorded. As an example, in this embodiment, the pre-processed device can be fixed on a two-dimensional moving platform to achieve point-by-point scanning of the heavy-ion microbeam and recording of the position coordinates of each scan point. The range of the point-by-point scanning of the heavy-ion microbeam covers the entire die, and the charge collection amount is obtained by integrating the single-particle transient current over time; the single-particle transient current is obtained using an oscilloscope. Specifically, in this embodiment, the pre-processed device obtained in step 1.3) can be fixed on a two-dimensional moving platform, and a 110MeV Cl-ion microbeam is used to scan the die point-by-point and record the coordinate positions of each scan point. Then, the single-particle transient current at each coordinate position is recorded using an oscilloscope, and the transient current is integrated over time to obtain the single-particle effect charge collection amount.

[0062] 2.2) Based on the charge collection data at each coordinate position obtained in step 2.1), calculate the average charge collection value of all single-event events at each coordinate position, and draw a single-event sensitive region distribution map. Calculate the area enclosed by all coordinate positions where charge collection can be detected; this is the surface area of ​​the single-event sensitive region. The single-event effect sensitive region planar diagram drawn in this embodiment is shown below. Figure 2 As shown. In Figure 2 In the diagram, Q100 represents a region with a charge collection of 0 pC; Q200 represents a region with a charge collection greater than 0 pC and less than or equal to 0.25 pC; Q300 represents a region with a charge collection greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents a region with a charge collection greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents a region with a charge collection greater than 0.75 pC and less than or equal to 1 pC; Q600 represents a region with a charge collection greater than 1 pC and less than or equal to 1.25 pC; Q700 represents a region with a charge collection greater than 1.25 pC and less than or equal to 1.5 pC; and Q800 represents a region with a charge collection greater than 1.5 pC.

[0063] III. Determine the depth of the single-event effect sensitive region.

[0064] 3.1) A three-dimensional simulation model of the semiconductor device described in step 1.1) is established using a TCAD tool, and the three-dimensional simulation model is calibrated for the first time based on the electrical parameter test results obtained in step 1.3). As an example, the TCAD tool in this embodiment can be Sentaurus, Silvaco, or Medici. Specifically, this embodiment can use the Sentaurus TCAD tool to establish a three-dimensional simulation model of the vertical bipolar transistor device described in step 1.1), and perform a first calibration of the three-dimensional simulation model based on the electrical parameter test results obtained in step 1.3). The calibration results are as follows: Figure 3 As shown.

[0065] 3.2) Single-event effect numerical simulation is performed using the three-dimensional simulation model obtained in step 3.1). The incident ion conditions are the same as those for heavy ions in step 2.1). The three-dimensional simulation model obtained in step 3.1) is then calibrated a second time based on the irradiation experimental results from step 2.1). As an example, this embodiment can obtain the single-event response of a 110 MeV Cl ion vertical incident device, and the three-dimensional simulation model obtained in step 3.1) is calibrated a second time based on the heavy ion microbeam irradiation experimental results from step 2.1). The calibration results are as follows: Figure 4 As shown.

[0066] 3.3) Set different substrate thicknesses in the three-dimensional simulation model obtained in step 3.2). As an example, in this embodiment, when setting different substrate thicknesses, the settings can be made according to the actual situation. For example, the substrate thicknesses can be set from small to large as follows: 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm.

[0067] 3.4) Numerical simulations are performed on the three-dimensional simulation models with different substrate thicknesses obtained in step 3.3) of heavy ion incident. The heavy ion incident direction is perpendicular to the device surface, and the track length is greater than the substrate thickness set in step 3.3), to obtain the charge collection amount under different substrate thicknesses. As an example, specifically, this embodiment can perform single-event effect numerical simulations on three-dimensional simulation models with substrate thicknesses of 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm, with the ion track length set to 35μm, thereby obtaining the charge collection amount under different substrate thicknesses;

[0068] 3.5) Based on the numerical simulation results of step 3.4), plot the relationship curve between charge collection amount and substrate thickness. In this embodiment, the relationship curve between charge collection amount and substrate thickness is as follows: Figure 5 As shown.

[0069] 3.6) Extract the substrate thickness value at which charge collection reaches saturation from the relationship curve obtained in step 3.5), which is the depth of the single-event effect sensitive region. As an example, this embodiment can... Figure 5 The substrate thickness at which charge collection reaches saturation is extracted from the relationship curve shown and used as the depth of the single-event effect sensitive region.

[0070] In this embodiment, the beam spot area of ​​the heavy ion microbeam in step 2.1) is smaller than the active region area of ​​the device. The area scanned point-by-point by the heavy ion microbeam in step 2.1) includes all regions capable of generating single-event effects. The heavy ion incident direction in steps 2.1), 3.2), and 3.4) is perpendicular to the device surface. The integrated charge collection amount at each coordinate position in step 2.2) is the average charge collection amount of all single-event effect events induced by heavy ions at each coordinate position. In step 3.4), the ion track length set in the single-event effect numerical simulation must be greater than the substrate thickness of the device model set in step 3.3).

[0071] Therefore, this embodiment can determine the surface area and depth of the sensitive region of a vertical bipolar transistor. This embodiment uses a heavy-ion microbeam to scan the device, obtaining point-by-point information on the single-particle sensitivity of different regions, thus accurately identifying the surface area of ​​the sensitive region. Compared to pulsed laser microbeam irradiation, heavy ions in this embodiment can better penetrate the top-layer metal wiring and active region of the device and reach deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained from heavy-ion microbeam experiments are more accurate than those from pulsed laser microbeam experiments. This embodiment performs two calibrations on the three-dimensional numerical simulation model using electrical parameter test results and heavy-ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. This embodiment determines the depth of the sensitive region based on the calibrated three-dimensional numerical simulation model and then flexibly sets the substrate thickness, well considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. Furthermore, the numerical simulation method alleviates the problems of time shortage and high cost of heavy-ion experiments, significantly improving experimental efficiency and saving experimental costs.

[0072] In summary, this invention provides a method for determining the single-event effect sensitive region. First, a heavy-ion microbeam is used to scan the semiconductor device under test point-by-point. Then, a planar map of the single-event effect sensitive region is drawn based on the point-by-point scanning results. Next, the surface area of ​​the single-event effect sensitive region is calculated based on the planar map, and simultaneously, a three-dimensional numerical simulation model constructed in advance or in real-time based on the semiconductor device under test is obtained. The depth of the single-event effect sensitive region is determined based on the three-dimensional numerical simulation model. Finally, the surface area and depth of the single-event effect sensitive region are combined to obtain the single-event effect sensitive region of the semiconductor device under test. The semiconductor device under test includes: exposed die and semiconductor devices that have passed electrical parameter testing. Therefore, this method, by scanning the device with a heavy-ion microbeam, can obtain point-by-point information on the single-event sensitivity of different regions, thereby accurately identifying the surface area of ​​the sensitive region. Compared to pulsed laser microbeam irradiation, this method using heavy ions can better penetrate the top metal wiring and active region of the device and reach deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained by heavy-ion microbeam experiments are more accurate than those obtained by pulsed laser microbeam experiments. This method calibrates the 3D numerical simulation model twice, using both electrical parameter test results and heavy ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. Based on the calibrated 3D numerical simulation model, this method determines the depth of the sensitive region and then flexibly sets the substrate thickness, effectively considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. Furthermore, the numerical simulation method alleviates the problems of time shortages and high costs associated with heavy ion experiments, greatly improving experimental efficiency and saving experimental costs.

[0073] like Figure 7 As shown, the present invention also provides a system for determining the sensitive region of a single-event effect, the system comprising:

[0074] The planar mapping module 710 is used to perform point-by-point scanning of the semiconductor device under test using a heavy-ion microbeam and to draw a planar map of the single-event effect sensitive region based on the point-by-point scanning results. The semiconductor device under test includes: a bare die and a semiconductor device that has passed electrical parameter testing. As an example, in this embodiment, the process of obtaining the semiconductor device under test includes: obtaining a pre-provided or real-time raw semiconductor device for determining the single-event effect sensitive region; removing the front-side package of the raw semiconductor device using chemical etching or laser etching to expose the die; performing electrical parameter testing on the raw semiconductor device with the exposed die, and using the raw semiconductor device that passes the electrical parameter testing as the semiconductor device under test.

[0075] Surface area module 720 is used to calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view.

[0076] The depth module 730 is used to acquire a three-dimensional numerical simulation model constructed in advance or in real time based on the semiconductor device under test, and to determine the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model. As an example, in this embodiment, the process of determining the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model includes: calibrating the three-dimensional numerical simulation model using the electrical parameter test results of the semiconductor device under test to obtain a first simulation model; performing single-event effect numerical simulation on the first simulation model, and calibrating the first simulation model after completing the single-event effect numerical simulation using the point-by-point scan results to obtain a second simulation model; setting different substrate thicknesses in the second simulation model to obtain a third simulation model; performing single-event effect numerical simulation on the third simulation model to obtain the charge collection amount under different substrate thicknesses; plotting the relationship curve between charge collection amount and substrate thickness based on the charge collection amount under different substrate thicknesses, and extracting the substrate thickness value when the charge collection amount reaches saturation from the relationship curve as the depth of the single-event effect sensitive region. Wherein, after the first calibration of the three-dimensional numerical simulation model using the electrical parameter test results of the semiconductor device under test, the calibration result is as follows: Figure 3 As shown. After calibrating the first simulation model following the single-event effect numerical simulation using the point-by-point scan results, the calibration results are as follows. Figure 4 As shown. As an example, in this embodiment, when setting different substrate thicknesses in the second simulation model, the settings can be adjusted according to actual conditions. For example, substrate thicknesses can be set sequentially from smallest to largest: 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm. In this embodiment, the relationship between charge collection and substrate thickness is shown in the curve. Figure 5 As shown in the curve, the substrate thickness at which the charge collection reaches saturation is the depth of the single-event effect sensitive region.

[0077] Therefore, this embodiment uses heavy-ion microbeams to scan the device, obtaining point-by-point information on the single-particle sensitivity of different regions, thus accurately identifying the surface area of ​​sensitive regions. Compared to pulsed laser microbeam irradiation, heavy ions in this embodiment can better penetrate the top-layer metal wiring and active region of the device and reach deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained from heavy-ion microbeam experiments are more accurate than those from pulsed laser microbeam experiments. This embodiment performs two calibrations on the three-dimensional numerical simulation model using electrical parameter test results and heavy-ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. Based on the calibrated three-dimensional numerical simulation model, this embodiment determines the depth of the sensitive region and flexibly sets the substrate thickness, well considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. In addition, the numerical simulation method alleviates the problems of time shortage and high cost of heavy-ion experiments, greatly improving experimental efficiency and saving experimental costs.

[0078] In an exemplary embodiment, the process by which the planar mapping module 710 performs point-by-point scanning of the semiconductor device under test using a heavy-ion microbeam and draws a planar map of the single-event effect sensitive region based on the point-by-point scanning results includes: fixing the semiconductor device under test to a two-dimensional moving platform, and performing point-by-point scanning of the semiconductor device under test using a heavy-ion microbeam, recording the coordinate position of each scanning point; acquiring the single-event transient current at each coordinate position, and performing time integration on the single-event transient current at each coordinate position to obtain the corresponding single-event effect charge collection amount; calculating the average value of all single-event effect charge collection amounts at each coordinate position, and drawing a planar map of the single-event effect sensitive region based on the average value. As an example, this embodiment can use a vertical bipolar transistor device with an exposed die and that has passed electrical parameter testing as the semiconductor device under test, then fix it on a two-dimensional moving platform, and use a 110MeV Cl-ion microbeam to perform point-by-point scanning of its die and record the coordinate position of each scanning point. The single-event transient current at each coordinate position is recorded using an oscilloscope, and the transient current is integrated over time to obtain the single-event effect charge collection amount. Then, the average value of the single-event effect charge collection amount at each coordinate position is calculated, and a planar diagram of the single-event effect sensitive region is drawn based on the average value. The single-event effect sensitive region planar diagram drawn in this embodiment is as follows: Figure 2 As shown. In Figure 2In the diagram, Q100 represents a region with a charge collection of 0 pC; Q200 represents a region with a charge collection greater than 0 pC and less than or equal to 0.25 pC; Q300 represents a region with a charge collection greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents a region with a charge collection greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents a region with a charge collection greater than 0.75 pC and less than or equal to 1 pC; Q600 represents a region with a charge collection greater than 1 pC and less than or equal to 1.25 pC; Q700 represents a region with a charge collection greater than 1.25 pC and less than or equal to 1.5 pC; and Q800 represents a region with a charge collection greater than 1.5 pC.

[0079] In some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the beam spot area of ​​the heavy ion microbeam is smaller than the active region area of ​​the semiconductor device under test. Furthermore, in some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the point-by-point scanning region includes all regions on the semiconductor device under test capable of generating single-event effects. Simultaneously, in some exemplary embodiments, when performing point-by-point scanning of the semiconductor device under test using a heavy ion microbeam, the incident direction of the heavy ion microbeam is perpendicular to the surface of the semiconductor device under test.

[0080] In one exemplary embodiment, when performing single-event effect numerical simulations on the first simulation model and the third simulation model, the incident direction of the radiating particles is perpendicular to the surface of the semiconductor device under test. Furthermore, in some exemplary embodiments, when performing single-event effect numerical simulations on the third simulation model, the track length of the radiating particles is greater than the substrate thickness in the third simulation model. As an example, the radiating particles in this embodiment can be heavy ions, or they can be alpha particles, protons, neutrons, or electrons, etc. Alpha particles are particles emitted during the decay of certain radioactive materials (e.g., uranium, radium, or some artificial nuclides), consisting of two neutrons and two protons (helium-4), with a mass four times that of a hydrogen atom, and carrying a positive charge.

[0081] In a specific example, taking a vertical bipolar transistor device as the original semiconductor device, the present invention also provides a system for determining the sensitive region of a single-event effect, used to perform the following steps:

[0082] I. Preprocessing.

[0083] 1.1) Provide a semiconductor device for determining the size of the sensitive region;

[0084] 1.2) Remove the front-side package of the semiconductor device described in step 1.1) to completely expose the die. As an example, this embodiment can use chemical etching or laser etching to remove the front-side package of the device. For example, chemical etching can be used to remove the front-side package of the semiconductor device described in step 1.1).

[0085] 1.3) Perform electrical parameter tests on the devices obtained in step 1.2) and screen out failed devices;

[0086] 2. Determine the surface area of ​​the single-event effect sensitive region.

[0087] 2.1) The pre-processed device obtained in step 1.3) is scanned point-by-point using a heavy-ion microbeam, with the heavy-ion incident direction perpendicular to the device surface. The position coordinates and charge collection amount of each scan point are recorded. As an example, in this embodiment, the pre-processed device can be fixed on a two-dimensional moving platform to achieve point-by-point scanning of the heavy-ion microbeam and recording of the position coordinates of each scan point. The range of the point-by-point scanning of the heavy-ion microbeam covers the entire die, and the charge collection amount is obtained by integrating the single-particle transient current over time; the single-particle transient current is obtained using an oscilloscope. Specifically, in this embodiment, the pre-processed device obtained in step 1.3) can be fixed on a two-dimensional moving platform, and a 110MeV Cl-ion microbeam is used to scan the die point-by-point and record the coordinate positions of each scan point. Then, the single-particle transient current at each coordinate position is recorded using an oscilloscope, and the transient current is integrated over time to obtain the single-particle effect charge collection amount.

[0088] 2.2) Based on the charge collection data at each coordinate position obtained in step 2.1, calculate the average charge collection amount of all single-event events at each coordinate position, and draw a single-event sensitive region distribution map. Calculate the area enclosed by all coordinate positions where charge collection can be detected; this is the surface area of ​​the single-event sensitive region. The single-event effect sensitive region planar diagram drawn in this embodiment is shown below. Figure 2 As shown. In Figure 2 In the diagram, Q100 represents a region with a charge collection of 0 pC; Q200 represents a region with a charge collection greater than 0 pC and less than or equal to 0.25 pC; Q300 represents a region with a charge collection greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents a region with a charge collection greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents a region with a charge collection greater than 0.75 pC and less than or equal to 1 pC; Q600 represents a region with a charge collection greater than 1 pC and less than or equal to 1.25 pC; Q700 represents a region with a charge collection greater than 1.25 pC and less than or equal to 1.5 pC; and Q800 represents a region with a charge collection greater than 1.5 pC.

[0089] III. Determine the depth of the single-event effect sensitive region.

[0090] 3.1) A three-dimensional simulation model of the semiconductor device described in step 1.1) is established using a TCAD tool, and the three-dimensional simulation model is calibrated for the first time based on the electrical parameter test results obtained in step 1.3). As an example, the TCAD tool in this embodiment can be Sentaurus, Silvaco, or Medici. Specifically, this embodiment can use the Sentaurus TCAD tool to establish a three-dimensional simulation model of the vertical bipolar transistor device described in step 1.1), and perform a first calibration of the three-dimensional simulation model based on the electrical parameter test results obtained in step 1.3). The calibration results are as follows: Figure 3 As shown.

[0091] 3.2) Single-event effect numerical simulation is performed using the three-dimensional simulation model obtained in step 3.1). The incident ion conditions are the same as those for heavy ions in step 2.1). The three-dimensional simulation model obtained in step 3.1) is then calibrated a second time based on the irradiation experimental results from step 2.1). As an example, this embodiment can obtain the single-event response of a 110 MeV Cl ion vertical incident device, and the three-dimensional simulation model obtained in step 3.1) is calibrated a second time based on the heavy ion microbeam irradiation experimental results from step 2.1). The calibration results are as follows: Figure 4 As shown.

[0092] 3.3) Set different substrate thicknesses in the three-dimensional simulation model obtained in step 3.2). As an example, in this embodiment, when setting different substrate thicknesses, the settings can be made according to the actual situation. For example, the substrate thicknesses can be set from small to large as follows: 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm.

[0093] 3.4) Numerical simulations are performed on the three-dimensional simulation models with different substrate thicknesses obtained in step 3.3) of heavy ion incident. The heavy ion incident direction is perpendicular to the device surface, and the track length is greater than the substrate thickness set in step 3.3), to obtain the charge collection amount under different substrate thicknesses. As an example, specifically, this embodiment can perform single-event effect numerical simulations on three-dimensional simulation models with substrate thicknesses of 11μm, 13μm, 16μm, 19μm, 21μm, 25μm, and 30μm, with the ion track length set to 35μm, thereby obtaining the charge collection amount under different substrate thicknesses;

[0094] 3.5) Based on the numerical simulation results of step 3.4), plot the relationship curve between charge collection amount and substrate thickness. In this embodiment, the relationship curve between charge collection amount and substrate thickness is as follows: Figure 5 As shown.

[0095] 3.6) Extract the substrate thickness value at which charge collection reaches saturation from the relationship curve obtained in step 3.5), which is the depth of the single-event effect sensitive region. As an example, this embodiment can... Figure 5 The substrate thickness at which charge collection reaches saturation is extracted from the relationship curve shown and used as the depth of the single-event effect sensitive region.

[0096] In this embodiment, the beam spot area of ​​the heavy ion microbeam in step 2.1) is smaller than the active region area of ​​the device. The area scanned point-by-point by the heavy ion microbeam in step 2.1) includes all regions capable of generating single-event effects. The heavy ion incident direction in steps 2.1), 3.2), and 3.4) is perpendicular to the device surface. The integrated charge collection amount at each coordinate position in step 2.2) is the average charge collection amount of all single-event effect events induced by heavy ions at each coordinate position. In step 3.4), the ion track length set in the single-event effect numerical simulation must be greater than the substrate thickness of the device model set in step 3.3).

[0097] Therefore, this embodiment can determine the surface area and depth of the sensitive region of a vertical bipolar transistor. This embodiment uses a heavy-ion microbeam to scan the device, obtaining point-by-point information on the single-particle sensitivity of different regions, thus accurately identifying the surface area of ​​the sensitive region. Compared to pulsed laser microbeam irradiation, heavy ions in this embodiment can better penetrate the top-layer metal wiring and active region of the device and reach deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained from heavy-ion microbeam experiments are more accurate than those from pulsed laser microbeam experiments. This embodiment performs two calibrations on the three-dimensional numerical simulation model using electrical parameter test results and heavy-ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. This embodiment determines the depth of the sensitive region based on the calibrated three-dimensional numerical simulation model and then flexibly sets the substrate thickness, well considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. Furthermore, the numerical simulation method alleviates the problems of time shortage and high cost of heavy-ion experiments, significantly improving experimental efficiency and saving experimental costs.

[0098] In summary, this invention provides a system for determining the single-event effect sensitive region. First, a heavy-ion microbeam is used to scan the semiconductor device under test point-by-point. Then, a planar map of the single-event effect sensitive region is drawn based on the point-by-point scanning results. Next, the surface area of ​​the single-event effect sensitive region is calculated based on the planar map, and simultaneously, a three-dimensional numerical simulation model constructed in advance or in real-time based on the semiconductor device under test is obtained. The depth of the single-event effect sensitive region is determined based on the three-dimensional numerical simulation model. Finally, the surface area and depth of the single-event effect sensitive region are combined to obtain the single-event effect sensitive region of the semiconductor device under test. The semiconductor device under test includes: exposed die and semiconductor devices that have passed electrical parameter testing. Therefore, this system, by scanning the device with a heavy-ion microbeam, can obtain point-by-point information on the single-event sensitivity of different regions, thereby accurately identifying the surface area of ​​the sensitive region. Compared to pulsed laser microbeam irradiation, this system using heavy ions can better penetrate the top metal wiring and active region of the device and penetrate deep into the substrate; therefore, for electronic devices with multi-layer metal wiring, the results obtained by heavy-ion microbeam experiments are more accurate than those obtained by pulsed laser microbeam experiments. This system performs two calibrations on the 3D numerical simulation model using electrical parameter test results and heavy ion microbeam point-by-point scanning experimental results, significantly improving its simulation accuracy. Based on the calibrated 3D numerical simulation model, the system determines the depth of the sensitive region and then flexibly sets the substrate thickness, effectively considering the expansion of the sensitive region caused by the collection of diffused charges in the lightly doped substrate. Furthermore, the numerical simulation system alleviates the problems of time shortages and high costs associated with heavy ion experiments, significantly improving experimental efficiency and saving experimental costs.

[0099] It should be noted that the single-event effect sensitive region determination system and the single-event effect sensitive region determination method provided in the above embodiments belong to the same concept. The specific operation methods of each module and unit have been described in detail in the method embodiments and will not be repeated here. In practical applications, the single-event effect sensitive region determination system provided in the above embodiments can be assigned to different functional modules as needed, that is, the internal structure of the system can be divided into different functional modules to complete all or part of the functions described above. This is not a limitation here. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0100] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

[0101] It should be understood that although terms such as first, second, third, etc., may be used in the embodiments of the present invention to describe the preset range, these preset ranges should not be limited to these terms. These terms are only used to distinguish the preset ranges from one another. For example, without departing from the scope of the embodiments of the present invention, the first preset range may also be referred to as the second preset range, and similarly, the second preset range may also be referred to as the first preset range.

Claims

1. A method for determining the sensitive region of a single-event effect, characterized in that, The method includes the following steps: A heavy ion microbeam is used to scan the semiconductor device under test point by point, and a planar map of the single-event effect sensitive area is plotted based on the point-by-point scanning results; wherein, the semiconductor device under test includes: bare die and semiconductor devices that have passed electrical parameter testing; Calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view; A three-dimensional numerical simulation model based on the semiconductor device under test is obtained in advance or in real time, and the depth of the single-event effect sensitive region is determined based on the three-dimensional numerical simulation model. The surface area and depth of the single-event effect sensitive region are combined to obtain the single-event effect sensitive region of the semiconductor device under test. The process of determining the depth of the single-event effect sensitive region based on the aforementioned three-dimensional numerical simulation model includes: The three-dimensional numerical simulation model is calibrated using the test results of the electrical parameters of the semiconductor under test to obtain the first simulation model; The first simulation model is subjected to single-event effect numerical simulation, and the first simulation model after the single-event effect numerical simulation is calibrated using the point-by-point scan results to obtain the second simulation model. By setting different substrate thicknesses in the second simulation model, a third simulation model is obtained; The third simulation model was subjected to single-event effect numerical simulation to obtain the charge collection amount under different substrate thicknesses; Based on the charge collection amount under different substrate thicknesses, a curve showing the relationship between charge collection amount and substrate thickness was plotted, and the substrate thickness value at which the charge collection amount reaches saturation was extracted from the curve as the depth of the single-event effect sensitive region.

2. The method for determining the sensitive region of single-event effect according to claim 1, characterized in that, The process of acquiring the semiconductor device under test includes: Obtain raw semiconductor devices, either pre-provided or provided in real-time, for determining the sensitive region of single-event effects; The front-side package of the original semiconductor device is removed using chemical etching or laser etching to expose the die of the original semiconductor device. Electrical parameters are tested on the raw semiconductor device with the die exposed, and the raw semiconductor device that passes the electrical parameter test is used as the semiconductor device under test.

3. The method for determining the sensitive region of single-event effect according to claim 1, characterized in that, The process of using a heavy ion microbeam to perform point-by-point scanning of the semiconductor device under test and then plotting a planar map of the single-event effect sensitive region based on the point-by-point scanning results includes: The semiconductor device under test is fixed on a two-dimensional moving platform, and the semiconductor device under test is scanned point by point using a heavy ion microbeam, and the coordinate position of each scanning point is recorded. The single-event transient current at each coordinate position is obtained, and the single-event transient current at each coordinate position is integrated over time to obtain the corresponding single-event effect charge collection amount. Calculate the average value of the single-event effect charge collection at each coordinate location, and draw a planar map of the single-event effect sensitive region based on the average value.

4. The method for determining the sensitive region of single-event effect according to claim 1 or 3, characterized in that, When using a heavy ion microbeam to perform point-by-point scanning of a semiconductor device under test, the beam spot area of ​​the heavy ion microbeam is smaller than the active region area of ​​the semiconductor device under test.

5. The method for determining the sensitive region of single-event effect according to claim 1 or 3, characterized in that, When using a heavy ion microbeam to perform point-by-point scanning of a semiconductor device under test, the point-by-point scanning area of ​​the heavy ion microbeam includes all regions on the semiconductor device under test that can generate single-event effects.

6. The method for determining the sensitive region of single-event effect according to claim 1 or 3, characterized in that, When using a heavy ion microbeam to perform point-by-point scanning of a semiconductor device under test, the incident direction of the heavy ion microbeam is perpendicular to the surface of the semiconductor device under test.

7. The method for determining the sensitive region of single-event effect according to claim 1, characterized in that, When performing single-event effect numerical simulations on the first simulation model and the third simulation model, the incident direction of the radiating particles is perpendicular to the surface of the semiconductor device under test.

8. The method for determining the sensitive region of single-event effect according to claim 1 or 7, characterized in that, When performing single-event effect numerical simulation on the third simulation model, the track length of the radiated particle is greater than the substrate thickness in the third simulation model.

9. A system for determining the sensitive region of a single-event effect, characterized in that, The system includes: The planar mapping module is used to perform point-by-point scanning of the semiconductor device under test using a heavy ion microbeam and to draw a planar map of the single-event effect sensitive area based on the point-by-point scanning results; wherein, the semiconductor device under test includes: bare die and semiconductor devices that have passed electrical parameter testing; The surface area module is used to calculate the surface area of ​​the single-event effect sensitive region based on the single-event effect sensitive region plan view. A depth module is used to acquire a three-dimensional numerical simulation model constructed in advance or in real time based on the semiconductor device under test, and to determine the depth of the single-event effect sensitive region based on the three-dimensional numerical simulation model. This includes: calibrating the three-dimensional numerical simulation model using the electrical parameter test results of the semiconductor device under test to obtain a first simulation model; performing single-event effect numerical simulation on the first simulation model, and calibrating the first simulation model after completing the single-event effect numerical simulation using the point-by-point scan results to obtain a second simulation model; setting different substrate thicknesses in the second simulation model to obtain a third simulation model; performing single-event effect numerical simulation on the third simulation model to obtain the charge collection amount under different substrate thicknesses; plotting the relationship curve between charge collection amount and substrate thickness based on the charge collection amount under different substrate thicknesses, and extracting the substrate thickness value at which the charge collection amount reaches saturation from the relationship curve as the depth of the single-event effect sensitive region. The system further includes: combining the surface area and depth of the single-event effect sensitive region to obtain the single-event effect sensitive region of the semiconductor device under test.

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