Fuel cell stack impedance measurement correction method, device and electronic equipment

Abstract

The application provides a fuel cell stack impedance measurement correction method, device and electronic equipment. The fuel cell stack impedance measurement correction method comprises the following steps: linear fitting is performed based on obtained resistance value and temperature data of each partition of a PCB board to obtain intercept and slope data corresponding to each partition, the PCB board is used for measuring fuel cell stack impedance; resistance temperature coefficients of the material of the PCB board are obtained based on the intercept and slope data; the corrected 0 DEG C resistance value corresponding to each partition is extracted based on the resistance temperature coefficients; and each partition impedance after correction optimization is obtained based on the corrected 0 DEG C resistance value and the resistance temperature coefficients. The purpose of eliminating random errors is achieved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of new energy, and particularly relates to a fuel cell stack impedance measurement correction method and device and electronic equipment. BACKGROUND

[0002] The forward development of the stack requires real-time measurement of its internal state, optimization of the bipolar plate, membrane electrode and matching of the two according to the measurement results of the internal state, and verification of the results of the approved simulation model to provide a basis for digital design. The measurement of the single internal parameter distribution by using the embedded PCB board is a common means for many stack research and development teams, and is used for the verification of the short stack, the whole stack and the system level. The stack impedance is an important parameter to be detected, and the resistance value accuracy of the PCB board itself of the measurement device is an important factor affecting the accuracy of the stack impedance measurement.

[0003] Generally, the thickness of the PCB board is in the order of millimeters, and the plane is divided into several partitions, as shown in FIG. 1. Figure 1 The area of the PCB board is close to the area of the single stack (about 500 cm 2 ), and is divided into 3*7, that is, 21 regions. The upper and lower surfaces of a single region are connected by a conductor, and the resistance value is in the order of milliohms. Before the PCB board is put into use, the resistance values of the partitions at different temperatures need to be calibrated, and the reasons are as follows: (1) there is an inevitable resistance temperature drift phenomenon (that is, the resistance value changes with temperature) in the PCB board conductor (generally mainly copper or alloy copper), the working temperature range of the stack is-40℃-100℃, and even if the resistance temperature coefficient of the constantan (about 4 / 10000) is extremely low, the resistance value of the constantan conductor still changes by a maximum of 5.6% in the working temperature range of the stack, which exceeds the expected accuracy requirement; (2) the PCB manufacturing process has problems of machining accuracy and consistency, resulting in different errors between the resistance values of the partitions and the design values.

[0004] At present, the resistance values of the partitions of the PCB board are calibrated and measured at different temperatures by using a welding or clamp contact method, and different temperature environments are generally realized by using a temperature box. In the testing process, various errors are inevitably introduced, such as contact resistance, line resistance, temperature uniformity or instrument accuracy, and the cumulative error of these errors is about 10 -4 ~10 -3 Ω, which is close to the order of magnitude (10 -3 Ω) of the resistance values to be measured of the partitions, thereby existing a large relative error. SUMMARY

[0005] In view of the problems in the prior art, the application provides a fuel cell stack impedance measurement correction method, device and electronic equipment, which at least partially solves the error problem in the prior art.

[0006] In a first aspect, the embodiments of the present disclosure provide a fuel cell stack impedance measurement correction method, comprising:

[0007] linear fitting of the obtained PCB partition resistance and temperature data to obtain intercept and slope data corresponding to each partition, the PCB being used for measuring fuel cell stack impedance;

[0008] obtaining the resistance temperature coefficient of the PCB material based on the intercept and slope data;

[0009] extracting the corrected 0°C resistance value corresponding to each partition based on the resistance temperature coefficient;

[0010] obtaining the corrected and optimized impedance of each partition based on the corrected 0°C resistance value and the resistance temperature coefficient.

[0011] Optionally, the linear fitting of the obtained PCB partition resistance and temperature data to obtain intercept and slope data corresponding to each partition comprises:

[0012] based on the linear characteristics of the partition resistance and temperature data, removing obviously abnormal points or individual partitions with large deviation of measurement results to obtain preliminary screening data;

[0013] linear fitting of the preliminary screening data to obtain intercept and slope data corresponding to each partition.

[0014] Optionally, the obtaining of the resistance temperature coefficient of the PCB material based on the intercept and slope data comprises:

[0015] linear fitting of the intercept and slope data to obtain fitting data, and obtaining the resistance temperature coefficient of the PCB material based on the fitting data.

[0016] Optionally, the formula used for obtaining the resistance temperature coefficient of the PCB material based on the fitting data is:

[0017] K i =B i ρ+γ i ,

[0018] wherein, K i is the slope, B i is the intercept, ρ is the resistance temperature coefficient, and γ i is a random error term.

[0019] Optionally, γ i =-ε i ρ+η i ,

[0020] wherein, ε i and η i are random error terms.

[0021] Optionally, the formula for extracting the corrected 0 DEG C resistance value corresponding to each partition based on the resistance temperature coefficient is:

[0022]

[0023] wherein i is the partition number, R i is the partition resistance, is the partition corrected 0 DEG C resistance value, p is the resistance temperature coefficient, and T i is the partition temperature.

[0024] Optionally, the formula for obtaining the corrected and optimized impedance of each partition based on the corrected 0 DEG C resistance value and the resistance temperature coefficient is:

[0025]

[0026] wherein, is the corrected and optimized impedance at the temperature T of each partition, is the partition corrected 0 DEG C resistance value, p is the resistance temperature coefficient, and T is the temperature.

[0027] In a second aspect, the embodiments of the present disclosure further provide a fuel cell stack impedance measurement correction device, comprising: a data acquisition module configured to perform linear fitting based on acquired partition resistance and temperature data of a PCB board to obtain intercept and slope data corresponding to each partition, wherein the PCB board is used to measure the impedance of a fuel cell stack;

[0028] a temperature coefficient acquisition module configured to obtain the resistance temperature coefficient of the material of the PCB board based on the intercept and slope data;

[0029] a resistance value acquisition module configured to extract the corrected 0 DEG C resistance value corresponding to each partition based on the resistance temperature coefficient;

[0030] a correction optimization module configured to obtain the corrected and optimized impedance of each partition based on the corrected 0 DEG C resistance value and the resistance temperature coefficient.

[0031] In a third aspect, the embodiments of the present disclosure further provide an electronic device, which comprises:

[0032] at least one processor; and

[0033] a memory communicatively connected to the at least one processor; wherein

[0034] the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the fuel cell stack impedance measurement correction method according to any one of the first aspect.

[0035] In a fourth aspect, the present disclosure also provides a computer readable storage medium storing computer instructions for causing a computer to execute the fuel cell stack impedance measurement correction method according to any one of the first aspect.

[0036] The present disclosure provides a fuel cell stack impedance measurement correction method, device and electronic equipment. The fuel cell stack impedance measurement correction method corrects and optimizes the impedance of each partition by correcting the resistance value at 0°C and the resistance temperature coefficient, thereby eliminating random errors. BRIEF DESCRIPTION OF DRAWINGS

[0037] The above and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which like reference characters refer to like parts throughout the figures, and in which:

[0038] Figure 1 A schematic diagram of partitioning a PCB board;

[0039] Figure 2 A flowchart of the fuel cell stack impedance measurement correction method provided by the present disclosure;

[0040] Figure 3a A schematic diagram of the fitting results of sample data for partition 21;

[0041] Figure 3b A schematic diagram of the linear characteristics of the slope and intercept;

[0042] Figure 3c A schematic diagram of the measured values, linear fitting results and optimized correction values for partition 21. DETAILED DESCRIPTION

[0043] The embodiments of the present disclosure will be described in detail below with reference to the drawings.

[0044] It should be apparent that the following describes only some embodiments of the present disclosure and not all embodiments of the present disclosure. Other advantages and effects of the present disclosure will be easily understood by those skilled in the art from the content disclosed in the specification. Obviously, the described embodiments are only some of the embodiments of the present disclosure, not all embodiments. The present disclosure can also be implemented or applied by other different specific embodiments, and the details in the specification can be modified or changed based on different views and applications without departing from the spirit of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present disclosure.

[0045] It is to be understood that the embodiments described hereinbelow within the scope of the appended claims. It will be apparent to one of ordinary skill in the art that aspects described herein can be implemented in various forms, and that any particular structure and / or function described herein is merely an example. Based on the teachings herein one skilled in the art will appreciate that an aspect described herein can be implemented independently of any other aspects and that an aspect described herein can be implemented both as any number of software running on hardware (e.g., on a device) and / or as hardware itself. In addition, the various

[0046] It is also to be understood that the diagrams provided in the following embodiments are only schematic and that the actual configuration and / or number of the components shown therein can deviate from those shown in the Figures. The present disclosure can therefore vary in its implementation depending upon specific implementation requirements.

[0047] Furthermore, in the following description, numerous specific details are set forth in order to provide a thorough understanding of the examples. However, it will be apparent to one of ordinary skill in the art that the aspects described herein can be practiced without these specific details.

[0048] The present embodiment discloses a fuel cell stack impedance measurement correction method, comprising:

[0049] Linear fitting is performed based on the obtained resistance value and temperature data of each partition of the PCB board, to obtain intercept and slope data corresponding to each partition, the PCB board being used for measuring fuel cell stack impedance;

[0050] Based on the intercept and slope data, a resistance temperature coefficient of the PCB board material is obtained;

[0051] Based on the resistance temperature coefficient, a corrected 0°C resistance value corresponding to each partition is extracted;

[0052] Based on the corrected 0°C resistance value and the resistance temperature coefficient, a corrected and optimized impedance of each partition is obtained.

[0053] Optionally, the linear fitting to obtain the intercept and slope data corresponding to each partition based on the obtained resistance value and temperature data of each partition of the PCB board comprises:

[0054] Based on the linear characteristics of the resistance value and temperature data of each partition, obviously abnormal points or individual partitions with large deviation of measurement results are removed, to obtain preliminary screening data;

[0055] Linear fitting is performed based on the preliminary screening data, to obtain intercept and slope data corresponding to each partition.

[0056] Optionally, the resistance temperature coefficient of the PCB material is obtained based on the intercept and slope data, comprising:

[0057] The intercept and slope data are linearly fitted to obtain fitting data, and the resistance temperature coefficient of the PCB material is obtained based on the fitting data.

[0058] Optionally, the formula used to obtain the resistance temperature coefficient of the PCB material based on the fitting data is:

[0059] K i =B i ρ+γ i ,

[0060] wherein, K i is the slope, B i is the intercept, ρ is the resistance temperature coefficient, and γ i is a random error term.

[0061] Optionally, γ i =-ε i ρ+η i ,

[0062] wherein, ε i and η i are random error terms.

[0063] Optionally, the formula for extracting the corrected 0℃ resistance value corresponding to each partition based on the resistance temperature coefficient is:

[0064]

[0065] wherein, i is the partition number, R i is the partition resistance, is the partition corrected 0℃ resistance value, ρ is the resistance temperature coefficient, and T i is the partition temperature.

[0066] Optionally, the formula for obtaining the corrected and optimized impedance of each partition based on the corrected 0℃ resistance value and the resistance temperature coefficient is:

[0067]

[0068] wherein, is the corrected and optimized impedance at the temperature T of each partition, is the partition corrected 0℃ resistance value, ρ is the resistance temperature coefficient, and T is the temperature.

[0069] Embodiment 1:

[0070] It is assumed that the resistance R of the PCB conductor material and the temperature T have an approximately linear relationship: R=R0(1+ρT), wherein ρ is the resistance temperature coefficient, ρ is only related to the material, and R0 is the 0℃ resistance value.

[0071] Theoretically, the resistance measured at different temperatures in different sections of the PCB should satisfy the following relationship with temperature: R i =R 0，i (1+ρT i ), where i is the partition number.

[0072] Because the resistance testing process introduces various error factors (such as contact resistance, line resistance, temperature uniformity, instrument accuracy, etc.), and these errors in different zones exhibit random characteristics, the actual measured resistance and temperature approximately satisfy: R i =R 0，i +ε i +(R 0，i ρ+η i )T i This is equivalent to applying the same method to each partition R. i -T i The intercept and slope of the curve both have an added random error term ε. i and η i Let intercept B be... i =R 0，i +ε i Slope K i =R 0，i ρ+η i In this case, Unable to base on a single partition R i -T i The intercept B obtained from curve fitting i and slope K i To obtain a relatively accurate resistance temperature coefficient ρ.

[0073] Therefore, by making a variation, the intercept B i and slope K i The two have the following relationship: K i =B i ρ-ε i ρ+η i Due to ε i and η i Since it is a random error term, therefore ε i ρ and γ i =-ε i ρ+η i It can also be considered as a random error term. Therefore, we can conclude that:

[0074] K i =B i ρ+γ i (1),

[0075] That is, different partitions R i -T i The intercept B obtained from curve fittingi and slope K i , there is also an approximate linear relationship, K i -B i The slope of the curve is exactly equal to the temperature coefficient of resistance of the material ρ.

[0076] On this basis, the R i -T i curve of each partition is calculated using the measured R Satisfies:

[0077]

[0078] The corrected resistance is:

[0079]

[0080] Based on the above discussion, the fuel cell stack impedance measurement correction method is as shown in Figure 2 :

[0081] Step 1: The measured resistance R i -T i data of each partition is screened for linear characteristics, and individual partitions with obvious outliers or measurement results deviating greatly are removed; then linear fitting is performed to obtain the intercept B i and slope K i of each partition.

[0082] Step 2: Linear fitting is performed on the slope K i -intercept B i data obtained in step 1 to obtain the temperature coefficient of resistance ρ of the material according to formula (1); if the ρ value deviates significantly from the empirical value of the conductor material used in the PCB, return to step 1 to reanalyze and clean the original measured resistance R i -T i data; otherwise, proceed to step 3.

[0083] Step 3: According to formula (2), the R (0℃ resistance value) of each partition is extracted using the ρ obtained in step 2; if the R value deviates significantly from the design value of each partition, return to step 1 to reanalyze and clean the original measured resistance R i -T i data; otherwise, proceed to step 4.

[0084] Step 4: The R of each partition is obtained after correction and optimization according to formula (3).

[0085] It should be noted that the calibration test obtains the resistance value of discrete temperature points. If the resistance value of any temperature point is needed, the conventional method generally obtains it by interpolation method. In this embodiment, the resistance value is obtained by numerical calculation according to formula (3), which is superior to the conventional method in terms of data recording, calculation speed and convenience of use.

[0086] Additionally, if the material resistance value and the temperature have a polynomial nonlinear relationship, the polynomial coefficients can also be obtained by referring to the derivation process of formula (1) to formula (3), which will not be described here.

[0087] Embodiment 2

[0088] In this embodiment, the PCB board has 21 partitions, and the resistance sample data is measured at-40℃ to 100℃. The temperature interval is 10℃ to 20℃. According to step ① in the embodiment, the sample data of each partition is cleaned and linearly fitted to obtain the intercept and slope. Figure 3a is the fitting result of the sample data of partition 21 (i.e., the 21st partition). The circle point is the actually measured resistance temperature drift data, the dotted line is the linear fitting value, the slope is 0.010007, and the intercept is 2.3585. Only the fitting result of the sample data of partition 21 is shown. In fact, similar processing is performed on all partitions in this example.

[0089] As shown in Figure 3b , the circle point is the slope and intercept obtained for each partition. It can be seen that the slope and intercept have linear characteristics, which conforms to the derivation conclusion of formula (1). At the same time, the point (0.010341, 2.5219) deviates from the linear trend and is an abnormal point, which is removed. The solid line is the fitting result of the circle point. It can be seen that the circle points are gathered near the solid line. Through linear fitting, the resistance temperature coefficient of the material is obtained as 0.0048 (i.e., 1 / 206.25).

[0090] According to step ③, the values of each partition are extracted. The value of partition 21 is 2.3113.

[0091] According to step ④, the resistance of each partition is optimized and corrected, as shown in Figure 3c . The circle point is the measured value, the dotted line is the linear fitting result, and the solid line is the optimized correction value. It can be seen that the optimized correction value corrects the measured value to a certain extent and eliminates the error term caused by random interference.

[0092] The embodiment also discloses a fuel cell stack impedance measurement correction device, which comprises a data acquisition module, which is used for linearly fitting the intercept and slope data corresponding to each partition based on the acquired resistance and temperature data of each partition of a PCB board, and the PCB board is used for measuring the impedance of a fuel cell stack.

[0093] The temperature coefficient obtaining module is configured to obtain a resistance temperature coefficient of the PCB material based on the intercept and the slope data.

[0094] The resistance value obtaining module is configured to extract a corrected 0 DEG C resistance value corresponding to each partition based on the resistance temperature coefficient.

[0095] The correction optimization module is configured to obtain a corrected and optimized impedance of each partition based on the corrected 0 DEG C resistance value and the resistance temperature coefficient.

[0096] The electronic device disclosed in the embodiment includes a memory and a processor. The memory is configured to store non-transitory computer-readable instructions. Specifically, the memory can include one or more computer program products, which can include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may, for example, include random access memory (RAM) and / or cache memory, etc. The non-volatile memory may, for example, include read-only memory (ROM), a hard disk, a flash memory, etc.

[0097] The processor can be a central processing unit (CPU) or other forms of processing units with data processing and / or instruction execution capabilities, and can control other components in the electronic device to perform desired functions. In one embodiment of the present disclosure, the processor is configured to run the computer-readable instructions stored in the memory, so that the electronic device performs all or part of the steps of the fuel cell stack impedance measurement correction method of the embodiments of the present disclosure.

[0098] Those skilled in the art should understand that, in order to solve the technical problem of how to obtain a good user experience effect, the embodiments can also include well-known structures such as communication buses, interfaces, etc., which should also be included in the protection scope of the present disclosure.

[0099] The electronic device can include a processing device (such as a central processor, a graphics processor, etc.) that can perform various appropriate actions and processes according to programs stored in a read-only memory (ROM) or loaded from a storage device into a random access memory (RAM). In the RAM, various programs and data required for the operation of the electronic device are also stored. The processing device, the ROM, and the RAM are connected to each other through a bus. An input / output (I / O) interface is also connected to the bus.

[0100] Generally, the following devices can be connected to the I / O interface: input devices including, for example, sensors or visual information acquisition devices, etc.; output devices including, for example, display screens, etc.; storage devices including, for example, magnetic tapes, hard disks, etc.; and communication devices. The communication device can allow the electronic device to communicate wirelessly or wiredly with other devices (such as edge computing devices) to exchange data.

[0101] In particular, according to embodiments of the present disclosure, the processes described above with reference to the flowcharts can be implemented as a computer software program. For example, embodiments of the present disclosure include a computer program product comprising a computer program carried on a non-transitory computer-readable medium, the computer program containing program code for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network by a communication device, or installed from a storage device, or installed from a ROM. When the computer program is executed by a processing device, all or part of the steps of the fuel cell stack impedance measurement correction method of embodiments of the present disclosure are performed.

[0102] Detailed descriptions of the embodiments can refer to the corresponding descriptions of the previous embodiments, which will not be repeated here.

[0103] A computer-readable storage medium according to embodiments of the present disclosure has non-transitory computer-readable instructions stored thereon. When the non-transitory computer-readable instructions are run by a processor, all or part of the steps of the fuel cell stack impedance measurement correction method of embodiments of the present disclosure described above are performed.

[0104] The computer-readable storage medium described above includes, but is not limited to, optical storage media (e.g., CD-ROM and DVD), magneto-optical storage media (e.g., MO), magnetic storage media (e.g., magnetic tape or a removable hard disk), media with built-in rewritable non-volatile memory (e.g., a memory card), and media with built-in ROM (e.g., a ROM cartridge).

[0105] Detailed descriptions of the embodiments can refer to the corresponding descriptions of the previous embodiments, which will not be repeated here.

[0106] The basic principles of the present disclosure are described above in conjunction with specific embodiments, but it should be noted that the advantages, benefits, effects, etc. mentioned in the present disclosure are only examples and are not limiting, and these advantages, benefits, effects, etc. cannot be considered as the must-have of each embodiment of the present disclosure. In addition, the above specific details of the disclosure are only for the purpose of example and understanding, and are not limiting, and the above details do not limit the present disclosure to the must-have of the above specific details.

[0107] In this disclosure, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. The block diagram of the devices, apparatus, equipment, systems referred to in this disclosure is merely illustrative and not intended to imply the necessity or arrangement of the connections, arrangement, configuration as shown in the block diagram. As will be appreciated by those skilled in the art, the devices, apparatus, equipment, systems can be connected, arranged, configured in any way. The words "comprising," "containing," "including," "having," and the like, are to be construed open-ended, meaning "including but not limited to," and are to be taken in their broadest context. The words "or" and "and" as used herein, mean "and / or," and are to be taken in their broadest context, unless the context clearly indicates otherwise. The word "comprising" as used herein, means "comprising but not limited to," and is to be taken in its broadest context.

[0108] Also, as used in this disclosure, "or" as used in the context of items A and B as "at least one of A or B" indicates a disjunction, such that, for example, a disjunction of "at least one of A, B, or C" means A or B or C, or AB or AC or BC, or ABC (i.e., A and B and C). Furthermore, the word "example" is not meant to convey that a described example is preferred or better than other examples.

[0109] It is also important to note that the systems and methods of the disclosure can be embodied in a variety of forms including, but not limited to, a data processor, a computer program product, a computer, one or more components of a computer, software, and combinations of the same. In this disclosure, the term "data processor" means any processor containing one or more processors that retrieves instructions and data from, and writes information to, a memory, whether local or remote. Also, it is understood that the systems and methods of the disclosure can be located on one computer, or can be distributed among several computers or other devices.

[0110] Various changes, modifications and improvements in the herein described technologies can be made within the teachings of the technology, as defined by the appended claims, without departing from the technical teachings of the disclosure. Further, the aspects of the claims to the disclosure are not limited to the specific aspects described hereinabove. A person of ordinary skill in the art will readily recognize that the technology can be practiced with a variety of processing, machine, manufacture, event of constituting, means, methods and actions in addition to, or other than, those described herein without departing from the scope of the disclosure. Accordingly, the appended claims can embrace such alternative subject matter as fall within the scope of the claims.

[0111] The above description of the disclosed aspects is meant to be illustrative of the aspects and not limiting thereof. Many changes, modifications, and variations of the described aspects, combinations, and combinations of them, can be made within the scope of the disclosure, which is not limited to the described aspects. Accordingly, the disclosure is intended to embrace all such alterations, modifications, and variations which fall within the scope of this disclosure, including what can be practiced or claimed as of the date of the patent. Accordingly, the disclosure is intended to embrace all such alterations, modifications, and variations which fall within the scope of this disclosure, including what can be practiced or claimed as of the date of the patent.

[0112] The foregoing description has been presented for the purposes of illustration and description. Furthermore, the description is not intended to limit the embodiments of the disclosure to the forms disclosed herein. Although the various example aspects and embodiments have been described herein with regard to particular aspects and embodiments, those skilled in the art will recognize that certain modifications, changes, substitutions, additions and sub-combinations can be made without departing from the spirit of the disclosure.

Claims

1. A method of fuel cell stack impedance measurement correction, characterized by, The method comprises the following steps: linear fitting is performed on the obtained resistance value and temperature data of each partition of the PCB plate to obtain intercept and slope data corresponding to each partition, the PCB plate being used for measuring impedance of a fuel cell stack; a resistance value temperature coefficient of a material of the PCB plate is obtained based on the intercept and slope data, which comprises the following steps: linear fitting is performed on the intercept and slope data to obtain fitting data, and a resistance value temperature coefficient of a material of the PCB plate is obtained based on the fitting data, and a formula used is: K i = B i p + y i , where K i is the slope, B i is the intercept, p is the resistance temperature coefficient, y i is the random error term; a corrected 0 DEG C resistance value corresponding to each partition is extracted based on the resistance value temperature coefficient; corrected and optimized impedance of each partition is obtained based on the corrected 0 DEG C resistance value and the resistance value temperature coefficient.

2. The fuel cell stack impedance measurement correction method according to claim 1, characterized by, The method comprises the following steps: linear fitting is performed on the obtained resistance value and temperature data of each partition of the PCB plate to obtain intercept and slope data corresponding to each partition, the PCB plate being used for measuring impedance of a fuel cell stack; obvious abnormal points or individual partitions with deviated measurement results are removed based on linear characteristics of the resistance value and temperature data of each partition to obtain preliminary screening data; linear fitting is performed on the preliminary screening data to obtain intercept and slope data corresponding to each partition. gamma i = - epsilon i rho + eta i , where ε i and η i are random error terms.

4. The fuel cell stack impedance measurement correction method according to claim 1, characterized by, 3. The method for correcting impedance measurement of a fuel cell stack according to claim 1, wherein where i is the partition number, R i is the partition resistance, is the partition correction 0°C resistance value, p is the resistance temperature coefficient, T i is the partition temperature.

5. The fuel cell stack impedance measurement correction method according to claim 1, characterized by, a formula for extracting a corrected 0 DEG C resistance value corresponding to each partition based on the resistance value temperature coefficient is: wherein, is the corrected optimized impedance for each partition temperature T, is the partition corrected 0°C resistance value, p is the resistance temperature coefficient, and T is the temperature.

6. A fuel cell stack impedance measurement correction device characterized by comprising: a formula for obtaining corrected and optimized impedance of each partition based on the corrected 0 DEG C resistance value and the resistance value temperature coefficient is: The method comprises the following steps: a data acquisition module is configured to perform linear fitting on the obtained resistance value and temperature data of each partition of the PCB plate to obtain intercept and slope data corresponding to each partition, the PCB plate being used for measuring impedance of a fuel cell stack; a temperature coefficient acquisition module is configured to obtain a resistance value temperature coefficient of a material of the PCB plate based on the intercept and slope data, which comprises the following steps: K i = B i p + y i , where K i is the slope, B i is the intercept, p is the resistance temperature coefficient, and y i is the random error term. linear fitting is performed on the intercept and slope data to obtain fitting data, and a resistance value temperature coefficient of a material of the PCB plate is obtained based on the fitting data, and a formula used is: a resistance value acquisition module is configured to extract a corrected 0 DEG C resistance value corresponding to each partition based on the resistance value temperature coefficient; 7. An electronic device, comprising: a correction and optimization module is configured to obtain corrected and optimized impedance of each partition based on the corrected 0 DEG C resistance value and the resistance value temperature coefficient. The electronic device comprises: at least one processor; and a memory connected to the at least one processor in communication; wherein 8. A computer-readable storage medium, characterized in that, the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the method for correcting impedance measurement of a fuel cell stack according to any one of claims 1-5. The computer readable storage medium stores computer instructions for causing a computer to perform the method for correcting impedance measurement of a fuel cell stack according to any one of claims 1-5.

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