High frequency module and communication device

Abstract

The high-frequency module (1A) comprises a first inductor and a second inductor arranged on a main surface (91a) of a module substrate (91), a resin component (92), a metal shielding layer (95) covering the surface of the resin component (92), and a metal shielding plate (70) arranged on the main surface (91a) and arranged between the first inductor and the second inductor, wherein the metal shielding plate (70) is connected to a ground electrode of the main surface (91a) and the metal shielding layer (95), the first inductor is arranged on any one of a transmission path (AT), a reception path (AR), and a transceiver path (CTR), and the second inductor is arranged on any one of the transmission path (AT), the reception path (AR), and the transceiver path (CTR) except the path on which the first inductor is arranged.

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as cellular phones, the arrangement structure of circuit elements constituting a high-frequency front-end circuit has become complicated, particularly with the advancement of multi-band technology.

[0003] Patent Document 1 discloses a circuit configuration for a transceiver (transmitting and receiving circuit) comprising multiple transmitters (transmitting paths) and multiple receivers (receiving paths), as well as a switch multiplexer (antenna switch) positioned between the multiple transmitters and receivers and an antenna. Each of the multiple transmitters includes a transmitting circuit, a PA (transmitting power amplifier), and an output circuit, while each of the multiple receivers includes a receiving circuit, an LNA (receiving low-noise amplifier), and an input circuit. The output circuit includes a transmitting filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receiving filter, an impedance matching circuit, and a duplexer. This configuration enables simultaneous transmission, simultaneous reception, or simultaneous transmission and reception by switching the switch multiplexer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application No. 2014-522216 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] However, when the transceiver (transceiver circuit) disclosed in Patent Document 1 is constructed from a high-frequency module installed in a mobile communication device, electromagnetic field coupling can occur between at least two of the inductors located in the transmit path, receive path, and the transmit / receive path including the antenna switch. In this case, the harmonic components of the high-output transmit signal amplified by the PA (transmit power amplifier) overlap with the transmit signal, potentially degrading the transmit signal quality. Furthermore, this electromagnetic field coupling reduces the isolation between the transmitter and receiver, and unwanted waves, such as the harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, can flow into the receive path, degrading reception sensitivity.

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a high-frequency module and a communication device that suppress degradation in the quality of a transmission signal or a reception signal.

[0010] Means used to solve problems

[0011] A high-frequency module according to one embodiment of the present invention comprises: a module substrate having a main surface; a first inductor and a second inductor arranged on the main surface; a resin member covering the main surface and at least a portion of the first inductor and the second inductor; a metal shielding layer covering the surface of the resin member and set to a ground potential; and a first metal shielding plate arranged on the main surface and, when viewed from above the module substrate, between the first inductor and the second inductor, the first metal shielding plate being in contact with the ground electrode and the metal shielding layer on the main surface, the first inductor being arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transmission / reception path for transmitting and receiving signals, and the second inductor being arranged in any one of the transmission path, the reception path, and the transmission / reception path excluding the path in which the first inductor is arranged.

[0012] Effects of the Invention

[0013] According to the present invention, a high-frequency module and a communication device can be provided in which degradation in the quality of a transmission signal or a reception signal is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a circuit configuration diagram of a high-frequency module and a communication device according to the first embodiment.

[0015] Figure 2 These are a plan view and a cross-sectional view of the high-frequency module according to the first embodiment.

[0016] Figure 3A This is a perspective view showing the appearance of a first example of a metal shield plate.

[0017] Figure 3B It is an external perspective view showing a second example of the metal shield plate.

[0018] Figure 3C It is an external perspective view showing a third example of the metal shield plate.

[0019] Figure 3D It is an external perspective view showing a fourth example of the metal shield plate.

[0020] Figure 3E It is an external perspective view showing a fifth example of the metal shield plate.

[0021] Figure 3F It is a perspective view showing the appearance of a sixth example of the metal shield plate.

[0022] Figure 4A This is a diagram showing a first example of the arrangement relationship between two inductors and a metal shield.

[0023] Figure 4B This is a diagram showing a second example of the arrangement relationship between two inductors and a metal shield.

[0024] Figure 4C This is a diagram showing a third example of the arrangement relationship between two inductors and a metal shield.

[0025] Figure 5 This is a diagram showing a fourth example of the arrangement relationship between two inductors and a metal shield.

[0026] Figure 6 These are a plan view and a cross-sectional view of a high-frequency module according to a first modification of the first embodiment.

[0027] Figure 7A These are a plan view and a cross-sectional view of a high-frequency module according to a second modification of the first embodiment.

[0028] Figure 7B This is a plan view of a high-frequency module according to a third modification of the first embodiment.

[0029] Figure 8 These are a plan view and a cross-sectional view of a high-frequency module according to a fourth modification of the first embodiment.

[0030] Figure 9 These are a plan view and a cross-sectional view of a high-frequency module according to a fifth modification of the first embodiment.

[0031] Figure 10 This is a plan view of a high-frequency module according to the second embodiment.

[0032] Figure 11 These are a plan view and a cross-sectional view of a high-frequency module according to a modified example of the second embodiment. DETAILED DESCRIPTION

[0033] Hereinafter, the embodiments of the present invention will be described in detail. It should be noted that the embodiments described below show inclusive or specific examples. In addition, the numerical values, shapes, materials, constituent elements, configurations of constituent elements and connection methods shown in the following embodiments, examples and modifications are examples and do not limit the subject matter of the present invention. In addition, the constituent elements of the following embodiments and modifications that are not described in the independent claims are described as arbitrary constituent elements. In addition, the sizes or size ratios of the constituent elements shown in the drawings are not necessarily strict. In the figures, the same symbols are marked for substantially the same structures, and repeated descriptions are sometimes omitted or simplified.

[0034] In addition, below, terms such as parallel and perpendicular that indicate the correlation between elements, terms such as rectangular that indicate the shape of elements, and numerical ranges do not have strict meanings but also include substantially equivalent ranges, such as differences of a few percent.

[0035] In the following figures, the x-axis and y-axis are axes perpendicular to each other on a plane parallel to the main surface of the module substrate. The z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating upward and its negative direction indicating downward.

[0036] In the circuit structure of the present disclosure, "connected" includes not only direct connection via connecting terminals and / or wiring conductors, but also electrical connection via other circuit components. Furthermore, "connected between A and B" means being connected to both A and B.

[0037] In addition, in the module structure disclosed in the present invention, "looking down" means observing by projecting the object onto the xy plane from the positive side of the z-axis. "The component is arranged on the main surface of the substrate", in addition to including the component being arranged on the main surface in contact with the main surface of the substrate, also includes the component being arranged above the main surface without contacting the main surface, and the component being arranged by embedding a part of the component into the substrate from the main surface side. "A is arranged between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. In addition, terms such as "parallel" and "perpendicular" that indicate the correlation between elements and terms such as "rectangular" that indicate the shape of an element do not only have strict meanings, but also mean that they include substantially equivalent ranges, such as errors of about several percent.

[0038] In the following, a "transmitting path" refers to a transmission line consisting of wiring that transmits high-frequency transmit signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, a "receiving path" refers to a transmission line consisting of wiring that transmits high-frequency receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, a "transmitting / receiving path" refers to a transmission line consisting of wiring that transmits both high-frequency transmit and receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0039] (Implementation Method 1)

[0040] [1.1 Circuit Structure of High-Frequency Module 1 and Communication Device 5]

[0041] Figure 1 This is a circuit diagram of a high-frequency module 1 and a communication device 5 according to Embodiment 1. As shown in this diagram, the communication device 5 includes a high-frequency module 1 , an antenna 2 , an RF signal processing circuit (RFIC) 3 , and a baseband signal processing circuit (BBIC) 4 .

[0042] RFIC3 is an RF signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes high-frequency receive signals input via the receive signal path of high-frequency module 1 through down-conversion and other methods, and outputs the resulting receive signals to BBIC4. RFIC3 also processes transmit signals input from BBIC4 through up-conversion and other methods, and outputs the resulting high-frequency transmit signals to the transmit signal path of high-frequency module 1.

[0043] BBIC 4 is a circuit that performs signal processing using an intermediate frequency band lower than the high-frequency signal propagating through high-frequency module 1. The signal processed by BBIC 4 is used as an image signal for image display or as an audio signal for communication via a speaker.

[0044] RFIC3 also functions as a control unit that controls the connection of switches 40, 41, and 42 in high-frequency module 1 based on the communication frequency band (frequency band) being used. Specifically, RFIC3 switches the connection of switches 40 to 42 in high-frequency module 1 in response to a control signal (not shown). Specifically, RFIC3 outputs digital control signals for controlling switches 40 to 42 to PA control circuit 15. Based on the digital control signals input from RFIC3, PA control circuit 15 in high-frequency module 1 outputs digital control signals to switches 40 to 42, thereby controlling the connection and disconnection of switches 40 to 42.

[0045] RFIC3 also functions as a control unit that controls the gain of the power amplifier 10 included in the high-frequency module 1, as well as the power supply voltage Vcc and bias voltage Vbias supplied to the power amplifier 10. Specifically, RFIC3 outputs a digital control signal to the control signal terminal 130 of the high-frequency module 1. Based on the digital control signal input via the control signal terminal 130, the PA control circuit 15 outputs a control signal, power supply voltage Vcc, or bias voltage Vbias to the power amplifier 10, thereby adjusting the gain of the power amplifier 10. The control unit may also be provided external to RFIC3, for example, in BBIC4.

[0046] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , radiates a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs the signal to the high-frequency module 1 .

[0047] It should be noted that, in the communication device 5 of this embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0048] Next, the detailed structure of the high-frequency module 1 will be described.

[0049] like Figure 1 As shown, the high-frequency module 1 includes a power amplifier 10, a low-noise amplifier 20, a PA control circuit 15, transmit filters 31 and 33, receive filters 32 and 34, matching circuits 50, 51, 52, 53 and 54, switches 40, 41 and 42, an antenna connection terminal 100, a transmit input terminal 110, a receive output terminal 120, and a control signal terminal 130.

[0050] Antenna connection terminal 100 is connected to antenna 2. Transmission input terminal 110 is a terminal for receiving a transmission signal from outside (RFIC 3) of high-frequency module 1. Reception output terminal 120 is a terminal for supplying a reception signal to outside (RFIC 3) of high-frequency module 1.

[0051] The power amplifier 10 is a transmission amplifier that amplifies transmission signals in communication bands A and B. An input terminal of the power amplifier 10 is connected to a transmission input terminal 110 , and an output terminal of the power amplifier 10 is connected to matching circuits 51 and 53 via a switch 41 .

[0052] The low noise amplifier 20 is a receiving amplifier that amplifies reception signals in the communication bands A and B with low noise. The input terminal of the low noise amplifier 20 is connected to the matching circuits 52 and 54 via the switch 42 , and the output terminal of the low noise amplifier 20 is connected to the reception output terminal 120 .

[0053] The PA control circuit 15 adjusts the gain of the power amplifier 10 using, for example, a digital control signal MIPI input via the control signal terminal 130. It should be noted that the PA control circuit 15 can also be formed by a semiconductor integrated circuit (IC). For example, a semiconductor IC is constructed using a CMOS (Complementary Metal Oxide Semiconductor). Specifically, it is formed using an SOI (Silicon On Insulator) process. This allows for low-cost manufacturing of the semiconductor IC. It should be noted that the semiconductor IC can also be constructed using at least one of GaAs, SiGe, and GaN. This allows for the output of high-frequency signals with high-quality amplification and noise performance.

[0054] The transmission filter 31 is disposed in the transmission path AT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of communication frequency band A among the transmission signals amplified by the power amplifier 10. Furthermore, the transmission filter 33 is disposed in the transmission path BT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of communication frequency band B among the transmission signals amplified by the power amplifier 10.

[0055] The reception filter 32 is disposed in the reception path AR connecting the low-noise amplifier 20 and the switch 40, and passes received signals in the reception band of communication frequency band A among received signals input from the antenna connection terminal 100. Furthermore, the reception filter 34 is disposed in the reception path BR connecting the low-noise amplifier 20 and the switch 40, and passes received signals in the reception band of communication frequency band B among received signals input from the antenna connection terminal 100.

[0056] It should be noted that the transmission filters 31 and 33 and the reception filters 32 and 34 described above may be, for example, surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters, and are not limited to these filters.

[0057] The transmission filter 31 and the reception filter 32 constitute a duplexer 30 having a passband of the communication frequency band A. The transmission filter 33 and the reception filter 34 constitute a duplexer 35 having a passband of the communication frequency band B.

[0058] It should be noted that the duplexers 30 and 35 may also be filters that transmit in a time division duplex (TDD) manner. In this case, a switch for switching between transmission and reception is provided at least on the front stage or the back stage of the filter.

[0059] Matching circuit 50 is disposed in the transceiver path CTR connecting antenna connection terminal 100 and switch 40 to achieve impedance matching between antenna 2, switch 40, and duplexers 30 and 35. Matching circuit 50 includes at least one inductor. It should be noted that matching circuit 50 can be disposed in series with transceiver path CTR or connected between transceiver path CTR and ground.

[0060] Matching circuit 51 is disposed in transmission path AT connecting power amplifier 10 and transmission filter 31 to achieve impedance matching between power amplifier 10 and transmission filter 31. Matching circuit 51 includes at least one inductor. It should be noted that matching circuit 51 can be disposed in series with transmission path AT or connected between transmission path AT and ground.

[0061] The matching circuit 53 is disposed in the transmission path BT connecting the power amplifier 10 and the transmission filter 33 to achieve impedance matching between the power amplifier 10 and the transmission filter 33. The matching circuit 53 includes at least one inductor. It should be noted that the matching circuit 53 can be disposed in series with the transmission path BT or connected between the transmission path BT and ground.

[0062] Matching circuit 52 is disposed in the receive path AR connecting low-noise amplifier 20 and receive filter 32 to achieve impedance matching between low-noise amplifier 20 and receive filter 32. Matching circuit 52 includes at least one inductor. It should be noted that matching circuit 52 can be disposed in series with receive path AR or connected between receive path AR and ground.

[0063] Matching circuit 54 is disposed in receive path BR connecting low-noise amplifier 20 and receive filter 34 to achieve impedance matching between low-noise amplifier 20 and receive filter 34. Matching circuit 54 includes at least one inductor. It should be noted that matching circuit 54 can be disposed in series with receive path BR or connected between receive path BR and ground.

[0064] It should be noted that a matching circuit may be provided in the transmission path between the power amplifier 10 and the switch 41 instead of the matching circuits 51 and 53 or in addition to the matching circuits 51 and 53 .

[0065] The switch 40 has a common terminal 40a and selection terminals 40b and 40c. The common terminal 40a is connected to the antenna connection terminal 100 via the matching circuit 50, the selection terminal 40b is connected to the duplexer 30, and the selection terminal 40c is connected to the duplexer 35. That is, the switch 40 is an antenna switch arranged between the antenna connection terminal 100 and the duplexers 30 and 35, and (1) switches between connection and disconnection between the antenna connection terminal 100 and the duplexer 30, and (2) switches between connection and disconnection between the antenna connection terminal 100 and the duplexer 35. It should be noted that the switch 40 is composed of a multi-connection type switch circuit capable of simultaneously performing the above-mentioned connections (1) and (2).

[0066] It should be noted that a matching circuit may be provided in the reception path between the low-noise amplifier 20 and the switch 42 instead of or in addition to the matching circuits 52 and 54 .

[0067] Furthermore, instead of or in addition to the matching circuit 50 , a matching circuit may be provided in the transmission / reception path connecting the switch 40 and the duplexer 30 and in the transmission / reception path connecting the switch 40 and the duplexer 35 .

[0068] Switch 41 has a common terminal 41a and select terminals 41b and 41c. It is arranged in the transmission path connecting power amplifier 10 and transmit filters 31 and 33, and switches between the connection between power amplifier 10 and transmit filter 31, and the connection between power amplifier 10 and transmit filter 33. Switch 41 is formed, for example, of an SPDT (Single Pole Double Throw) switch circuit. In this SPDT switch circuit, common terminal 41a is connected to the output terminal of power amplifier 10, select terminal 41b is connected to transmit filter 31 via matching circuit 51, and select terminal 41c is connected to transmit filter 33 via matching circuit 53.

[0069] Switch 42 has a common terminal 42a and select terminals 42b and 42c. It is arranged in the reception path connecting low-noise amplifier 20 and receive filters 32 and 34, and switches between the connection between low-noise amplifier 20 and receive filter 32, and between the connection between low-noise amplifier 20 and receive filter 34. Switch 42 is formed, for example, by an SPDT-type switch circuit, in which common terminal 42a is connected to the input terminal of low-noise amplifier 20, select terminal 42b is connected to receive filter 32 via matching circuit 52, and select terminal 42c is connected to receive filter 34 via matching circuit 54.

[0070] It should be noted that the transmission path AT is a signal path that transmits a transmission signal of communication band A and connects the transmission input terminal 110 and the common terminal 40a of the switch 40. Furthermore, the transmission path BT is a signal path that transmits a transmission signal of communication band B and connects the transmission input terminal 110 and the common terminal 40a of the switch 40. Furthermore, the reception path AR is a signal path that transmits a reception signal of communication band A and connects the reception output terminal 120 and the common terminal 40a of the switch 40. Furthermore, the reception path BR is a signal path that transmits a reception signal of communication band B and connects the reception output terminal 120 and the common terminal 40a of the switch 40. Furthermore, the transceiver path CTR is a signal path that transmits and receives signals of communication band A and transmits and receives signals of communication band B and connects the antenna connection terminal 100 and the common terminal 40a of the switch 40.

[0071] In the high-frequency module 1 having the above-described circuit configuration, the power amplifier 10, the switch 41, the matching circuit 51, and the transmit filter 31 constitute a first transmit circuit that outputs a transmit signal in communication frequency band A toward the antenna connection terminal 100. Furthermore, the power amplifier 10, the switch 41, the matching circuit 53, and the transmit filter 33 constitute a second transmit circuit that outputs a transmit signal in communication frequency band B toward the antenna connection terminal 100.

[0072] The low-noise amplifier 20, the switch 42, the matching circuit 52, and the receive filter 32 constitute a first receive circuit to which a receive signal in communication band A is input from the antenna 2 via the antenna connection terminal 100. Furthermore, the low-noise amplifier 20, the switch 42, the matching circuit 54, and the receive filter 34 constitute a second receive circuit to which a receive signal in communication band B is input from the antenna 2 via the antenna connection terminal 100.

[0073] According to the above-mentioned circuit structure, the high-frequency module 1 of this embodiment is capable of performing at least any one of the following: (1) transmission and reception of high-frequency signals in communication band A; (2) transmission and reception of high-frequency signals in communication band B; and (3) simultaneous transmission, simultaneous reception, or simultaneous transmission and reception of high-frequency signals in communication band A and high-frequency signals in communication band B.

[0074] It should be noted that in the high-frequency module of this embodiment, the transmitting circuit and receiving circuit can be connected to the antenna connection terminal 100 without passing through the switch 40, and the transmitting circuit and receiving circuit can also be connected to the antenna 2 via different terminals. Furthermore, the circuit structure of the high-frequency module of this embodiment only requires the module to include at least two of the transmitting path, the receiving path, and the transmitting and receiving path, and matching circuits configured in each of these two paths. Furthermore, the module can include either the first transmitting circuit or the second transmitting circuit. Furthermore, the module can include either the first receiving circuit or the second receiving circuit.

[0075] In a high-frequency module 1 having the aforementioned circuit configuration, when electromagnetic field coupling occurs between at least two matching circuits located in the transmit path, receive path, and transceiver path, the harmonic components of the high-output transmit signal amplified by the power amplifier overlap with the transmit signal, sometimes degrading the transmit signal quality. Furthermore, this electromagnetic field coupling degrades the isolation between the transmitter and receiver, and unwanted waves, such as the harmonic components or intermodulation distortion between the transmit signal and other high-frequency signals, sometimes flow into the receive path, degrading receiver sensitivity.

[0076] In contrast, the high-frequency module 1 of the present embodiment has a structure for suppressing the above-mentioned electromagnetic field coupling. Hereinafter, the structure for suppressing the above-mentioned electromagnetic field coupling of the high-frequency module 1 of the present embodiment will be described.

[0077] [1.2 Circuit Component Arrangement Structure of High-Frequency Module 1A According to Embodiment 1]

[0078] Figure 2 1A and 1B are a plan view and a cross-sectional view of a high-frequency module 1A according to the first embodiment. Figure 2 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 2 (b) shows Figure 2 A cross-sectional view taken along line II-II of FIG. 1A shows in detail the arrangement of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0079] like Figure 2 As shown, the high-frequency module 1A of this embodiment has Figure 1 In addition to the circuit structure shown, a module substrate 91 , a metal shield plate 70 , a metal shield layer 95 , a resin member 92 , and external connection terminals 150 are further provided.

[0080] The module substrate 91 is a substrate on which the first and second transmitting circuits, as well as the first and second receiving circuits, are mounted on its main surface 91a. Examples of the module substrate 91 include a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate with a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board. Antenna connection terminals 100, transmit input terminals 110, receive output terminals 120, and control signal terminals 130 may also be formed on the module substrate 91.

[0081] Resin member 92 is disposed on main surface 91a of module substrate 91, covering at least a portion of the circuit components constituting the first and second transmitting circuits and the first and second receiving circuits, as well as main surface 91a of module substrate 91. It ensures the reliability of these circuit components, including mechanical strength and moisture resistance. It should be noted that resin member 92 is not an essential component of the high-frequency module of this embodiment.

[0082] The external connection terminals 150 are arranged on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with the external substrate arranged on the negative side of the z-axis of the high-frequency module 1A via the plurality of external connection terminals 150. In addition, the ground terminal 150g among the plurality of external connection terminals 150 is set to the ground potential of the external substrate. It should be noted that the external connection terminals 150 can be as follows Figure 2 Such a planar electrode is formed on the main surface 91 b , but a bump electrode formed on the main surface 91 b may also be used.

[0083] The metal shield layer 95 covers the surface of the resin member 92 and is set to the ground potential. The metal shield layer 95 is a metal thin film formed by, for example, sputtering.

[0084] The metal shielding plate 70 is an example of a first metal shielding plate, and is a metal wall body erected from the main surface 91a toward the top surface of the resin component 92 on the positive side of the z-axis. The metal shielding plate 70 is connected to the ground electrode of the main surface 91a and the metal shielding layer 95. That is, the metal shielding plate 70 is connected to the ground at least two places above and below it, so that the electromagnetic field shielding function is enhanced. It should be noted that the metal shielding plate 70 can also be connected to the ground electrode of the main surface 91a and the shielding surface of the metal shielding layer 95 that is connected to the top surface of the resin component 92. In addition, it can also be connected to the ground electrode of the main surface 91a and the shielding surface of the metal shielding layer 95 that is connected to the side surface of the resin component 92. Use it later Figures 3A to 3F The detailed structure of the metal shield plate 70 will be described.

[0085] In addition, the metal shield plate 70 divides the main surface 91a into a region P and a region Q. Figure 2 As shown in (a), the power amplifier 10, PA control circuit 15, matching circuits 51 and 53, and switch 41 are arranged in region P of the main surface 91a. In addition, the low-noise amplifier 20, duplexers 30 and 35, matching circuits 50, 52, and 54, and switches 40 and 42 are arranged in region Q of the main surface 91a.

[0086] It should be noted that although Figure 2 Not shown in the figure, but constitutes Figure 1 The wiring for the transmission paths AT and BT, reception paths AR and BR, and transmission / reception path CTR shown is formed within the module substrate 91, on the main surfaces 91a and 91b. These wirings may also be bonding wires whose ends are bonded to either the main surfaces 91a and 91b or to any of the circuit components that constitute the high-frequency module 1A. Alternatively, these wirings may be terminals, electrodes, or wiring formed on the surfaces of the circuit components that constitute the high-frequency module 1A.

[0087] In this embodiment, matching circuit 50 is configured in the transmit / receive path CTR connecting antenna connection terminal 100 and common terminal 40a of switch 40 and includes a first inductor. Meanwhile, matching circuit 51 is configured in the transmit path AT connecting transmit input terminal 110 and common terminal 40a of switch 40 and includes a second inductor.

[0088] Here, as Figure 2 As shown, the metal shield plate 70 is arranged on the main surface 91 a and is arranged between the first inductor of the matching circuit 50 and the second inductor of the matching circuit 51 in a plan view of the module substrate 91 .

[0089] Thus, the second inductor configured in the transmission path AT and the first inductor configured in the transmission / reception path CTR are arranged with the metal shield plate 70 set to ground potential interposed therebetween. This prevents electromagnetic field coupling between the first and second inductors. This prevents the high-output transmission signal, amplified by the power amplifier 10 and superimposed with higher harmonic components, from being output from the antenna connection terminal 100 without passing through the transmission filter 31, thereby degrading the transmission signal quality. Furthermore, this prevents unwanted waves, such as these higher harmonics or intermodulation distortion between the transmission signal and other high-frequency signals, from flowing into the reception paths AR or BR due to this electromagnetic field coupling, thereby degrading reception sensitivity.

[0090] It should be noted that the combination of the first inductor and the second inductor separated and arranged by the metal shield 70 is not limited to the combination of the inductor arranged in the transmission and reception path and the inductor arranged in the transmission path.

[0091] The combination of the first inductor and the second inductor may also be a combination of an inductor arranged in the transmission and reception paths and an inductor arranged in the reception path. This prevents the high-output transmission signal amplified by the power amplifier 10 and its higher harmonic components from flowing into the reception paths AR or BR via the reception filters 32 or 34, thereby preventing deterioration in reception sensitivity.

[0092] Alternatively, the combination of the first inductor and the second inductor may be a combination of an inductor arranged in the transmission path and an inductor arranged in the reception path. This prevents the high-output transmission signal amplified by the power amplifier 10 and its higher harmonic components from flowing into the reception path AR or BR via the transmission filter 31 or 33 and the reception filter 32 or 34, thereby preventing the signal from degrading reception sensitivity.

[0093] That is, the first inductor may be arranged in any one of the transmission path, the reception path, and the transceiver path, and the second inductor may be arranged in any one of the transmission path, the reception path, and the transceiver path except the path in which the first inductor is arranged.

[0094] Furthermore, in the high-frequency module 1A of this embodiment, the circuit components arranged in the transmission paths AT and BT (power amplifier 10, PA control circuit 15, matching circuits 51 and 53, and switch 41) are arranged in region P of the main surface 91a, while the circuit components arranged in the reception paths AR and BR (low-noise amplifier 20, matching circuits 52 and 54, and switch 42) are arranged in region Q of the main surface 91a. In other words, the circuit components arranged in the transmission path and the circuit components arranged in the reception path are separated by the metal shield 70. This improves the isolation between the transmitter and receiver.

[0095] In the high-frequency module 1A of this embodiment, the low-noise amplifier 20 and the switch 42 may be included in a single semiconductor IC 60. This allows the high-frequency module 1A to have a lower profile and a smaller component mounting area on the main surface 91a. Consequently, the high-frequency module 1A can be miniaturized. Furthermore, the semiconductor IC 60 may include at least one of the switches 40 and 41.

[0096] [1.3 Structure of Metal Shield]

[0097] Next, the structure of the metal shield plate 70 included in the high-frequency module 1A of the present embodiment will be described.

[0098] Figure 3A This is a perspective view of the appearance of a metal shield plate 70A. The metal shield plate 70A shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70A is arranged to rise from a main surface 91a (not shown) toward the top surface (along the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the metal shield plate 70A and the main surface 91a, extending through the metal shield plate 70A in the normal direction (along the x-axis direction).

[0099] In addition, the metal shielding plate 70A has: a main body portion 71, which is arranged upright from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction); and a joining portion 73, which is extended parallel to the main surface 91a on the main surface 91a side and is joined to the ground electrode (not shown) on the main surface 91a.

[0100] The structure of the metal shield plate 70A includes a hole 72 formed between the main body 71 and the main surface 91a. This ensures good fluidity of the liquid resin near the metal shield plate 70A during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield plate 70A where the resin member 92 is not formed.

[0101] Figure 3B This is a perspective view of the appearance of a metal shield plate 70B. The metal shield plate 70B shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70B is arranged to rise from a main surface 91a (not shown) toward the top surface (along the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the metal shield plate 70B and the top surface of the resin member 92, extending along the normal direction (the x-axis direction) of the metal shield plate 70B.

[0102] In addition, the metal shielding plate 70B has: a main body portion 71, which is arranged upright from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction); and a joining portion 73, which is extended parallel to the main surface 91a on the main surface 91a side and is joined to the ground electrode (not shown) on the main surface 91a.

[0103] The structure of the metal shield 70B forms a hole 72 between the main body 71 and the top surface. This ensures good fluidity of the liquid resin near the metal shield 70B during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield 70B where the resin member 92 is not formed. Furthermore, since the hole 72 is not formed in the area contacting the main surface 91a (the area below the main body 71), isolation between circuit components arranged on the main surface 91a via the metal shield 70B is improved.

[0104] Figure 3C This is a perspective view of the appearance of a metal shield plate 70C. The metal shield plate 70C shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70C is arranged to rise from a main surface 91a (not shown) toward the top surface of a resin member 92 (not shown) (along the z-axis direction). A hole 72 is formed between the main surface 91a and the top surface of the resin member 92, extending through the metal shield plate 70C in the direction normal to the metal shield plate 70C (in the x-axis direction).

[0105] The metal shield plate 70C also includes a main body portion 71 extending from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction); and a bonding portion 73 extending parallel to the main surface 91a on the main surface 91a side and bonding to a ground electrode (not shown) on the main surface 91a. In the metal shield plate 70C, a plurality of main bodies 71 are discretely arranged with holes 72 interposed therebetween, and a plurality of bonding portions 73 are discretely arranged with holes 72 interposed therebetween.

[0106] The structure of the metal shield plate 70C includes the hole 72 formed between the main surface 91a and the top surface. This ensures good fluidity of the liquid resin near the metal shield plate 70C during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield plate 70C where the resin member 92 is not formed.

[0107] Figure 3D This is a perspective view of the appearance of a metal shield plate 70D. The metal shield plate 70D shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70D is arranged to rise from a main surface 91a (not shown) toward the top surface (along the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the metal shield plate 70D and the main surface 91a, extending through the metal shield plate 70D in the normal direction (along the x-axis direction).

[0108] The metal shield plate 70D includes a flat plate-shaped main body portion 71 that rises from a main surface 91a toward the top surface of the resin member 92 (along the z-axis direction) and is bonded to a ground electrode (not shown) on the main surface 91a; and a flat plate-shaped main body end portion 77 that is disposed at an end of the main body portion 71 parallel to the main surface 91a and rises from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction). The main body portion 71 and the main body end portion 77 are not parallel to each other.

[0109] The structure of the metal shield plate 70D includes a hole 72 formed between the main body 71 and the main surface 91a. This ensures good fluidity of the liquid resin near the metal shield plate 70D during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield plate 70D where the resin member 92 is not formed. Furthermore, since the main body 71 and the main body end 77 are not parallel, the metal shield plate 70D maintains its independence on the main surface 91a. Furthermore, since the joints 73 present in the metal shield plates 70A to 70C are absent, the space required for the metal shield plate 70D can be reduced.

[0110] Figure 3E This is a perspective view of the appearance of a metal shield plate 70E. The metal shield plate 70E shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70E is arranged to rise from a main surface 91a (not shown) toward the top surface of a resin member 92 (not shown) (along the z-axis direction). A hole 72 is formed between the metal shield plate 70E and the top surface of the resin member 92, extending along the normal direction (x-axis direction) of the metal shield plate 70E.

[0111] The metal shield plate 70E also includes a flat plate-shaped main body portion 71 that rises from a main surface 91a toward the top surface of the resin member 92 (along the z-axis direction) and is bonded to a ground electrode (not shown) on the main surface 91a; and a flat plate-shaped main body end portion 77 that is disposed at an end of the main body portion 71 parallel to the main surface 91a and rises from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction). The main body portion 71 and the main body end portion 77 are not parallel to each other.

[0112] The structure of the metal shield plate 70E, with the hole 72 formed between the main body 71 and the main surface 91a, ensures good fluidity of the liquid resin near the metal shield plate 70E during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield plate 70E where the resin member 92 is not formed. Furthermore, since the hole 72 is not formed in the area contacting the main surface 91a (the area below the main body 71), isolation between circuit components arranged on the main surface 91a via the metal shield plate 70E is improved. Furthermore, since the main body 71 and the main body end 77 are not parallel, the metal shield plate 70E maintains its independence on the main surface 91a. Furthermore, since the joint 73, which is present in the metal shield plates 70A to 70C, is not present, the space required for the metal shield plate 70E can be reduced.

[0113] Figure 3F This is a perspective view of the exterior appearance of a metal shield plate 70F. The metal shield plate 70F shown in this figure is an example of a metal shield plate 70 according to the embodiment. The metal shield plate 70F is arranged to rise from a main surface 91a (not shown) toward the top surface of a resin member 92 (not shown) (along the z-axis direction). A hole 72 is formed between the main surface 91a and the top surface of the resin member 92, extending through the metal shield plate 70F in the normal direction (the x-axis direction).

[0114] The metal shield plate 70F includes a flat plate-shaped main body portion 71 that rises from a main surface 91a toward the top surface of the resin member 92 (along the z-axis direction) and is bonded to a ground electrode (not shown) on the main surface 91a; and a flat plate-shaped main body end portion 77 that is disposed at an end of the main body portion 71 parallel to the main surface 91a and rises from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction). The main body portion 71 and the main body end portion 77 are not parallel to each other.

[0115] The structure of the metal shield plate 70F includes a hole 72 formed between the main surface 91a and the top surface. This ensures good fluidity of the liquid resin near the metal shield plate 70F during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield plate 70F where the resin member 92 is not formed. Furthermore, since the main body 71 and the main body end 77 are not parallel, the metal shield plate 70F maintains its independence on the main surface 91a. Furthermore, since the joints 73 present in the metal shield plates 70A to 70C are absent, the space required for the metal shield plate 70F can be reduced.

[0116] It should be noted that the structure of the metal shield plate 70 is not limited to the metal shield plates 70A to 70F described above. For example, a plurality of holes 72 may be arranged from the main surface 91a toward the top surface. Figure 3A to Figure 3C The x-axis negative direction shown in FIG. 1 may also be the x-axis positive direction. In addition, the metal shield plate 70 may also have both a joint portion 73 extending in the x-axis negative direction and a joint portion 73 extending in the x-axis positive direction. Figure 3D to Figure 3F The negative x-axis direction shown may also be the positive x-axis direction. In addition, the metal shield plate 70 may have both a main body end portion 77 extending in the negative x-axis direction and a main body end portion 77 extending in the positive x-axis direction.

[0117] [1.4 Configuration of the Metal Shield, First Inductor, and Second Inductor]

[0118] Next, the arrangement relationship between the metal shield plate 70 included in the high-frequency module 1A of the present embodiment and the inductor of the matching circuit will be described.

[0119] Figure 4A This figure illustrates a first example of the arrangement relationship between two inductors and a metal shield plate 70. This figure shows the arrangement relationship between the first inductor of the matching circuit 50 and the second inductor of the matching circuit 51, and the metal shield plate 70. As shown in this figure, in a plan view of the module substrate 91, the main body 71 of the metal shield plate 70 is arranged in the region S where the first and second inductors face each other, sandwiched between adjacent holes 72.

[0120] Thus, the high-intensity electromagnetic field among the electromagnetic fields formed by the first and second inductors can be cut off by the main body 71. Therefore, electromagnetic field coupling between the first and second inductors can be effectively suppressed.

[0121] Figure 4B This figure illustrates a second example of the arrangement of two inductors and a metal shield plate 70A. This figure shows the arrangement of the first inductor of matching circuit 50, the second inductor of matching circuit 51, and the metal shield plate 70A. As shown in this figure, when looking down at the module substrate 91, a hole 72 is provided in region S where the first and second inductors face each other. It should be noted that, although not shown, the main body 71 is provided above the hole 72 in region S (in the positive z-axis direction).

[0122] Thus, although an electromagnetic field loop formed by electromagnetic field coupling between the first and second inductors is formed within the metal shield 70A, this electromagnetic field loop is formed in the main body 71 surrounding the region S and arranged around the hole 72. Therefore, the magnetic flux density of this electromagnetic field loop is lower than the magnetic flux density of an electromagnetic field loop formed when only the main body 71 is arranged in the region S without the hole 72. Consequently, electromagnetic field coupling between the first and second inductors can be effectively suppressed.

[0123] It should be noted that although Figure 4B Although not shown, even when the metal shield plate 70B is disposed between the first and second inductors, the hole 72 can be disposed in the region S where the first and second inductors face each other when viewed from above the module substrate 91. In this case, the main body 71 is disposed below the hole 72 in the region S (in the negative z-axis direction).

[0124] Thus, although an electromagnetic field loop formed by electromagnetic field coupling between the first and second inductors is formed within the metal shield 70B, this electromagnetic field loop is formed in the main body 71 surrounding the region S and arranged around the hole 72. Therefore, the magnetic flux density of this electromagnetic field loop is lower than the magnetic flux density of an electromagnetic field loop formed when only the main body 71 is arranged in the region S without the hole 72. Consequently, electromagnetic field coupling between the first and second inductors can be effectively suppressed.

[0125] Figure 4C This figure illustrates a third example of the arrangement relationship between two inductors and a metal shield plate 70C. This figure shows the arrangement relationship between the first inductor of matching circuit 50 and the second inductor of matching circuit 51, and the metal shield plate 70C. As shown in this figure, when looking down at the module substrate 91, a hole 72 is provided in region S where the first and second inductors face each other. Furthermore, the main body 71 is provided in region S, sandwiching the hole 72 therebetween.

[0126] Thus, although an electromagnetic field loop formed by electromagnetic field coupling between the first and second inductors is formed within the metal shield plate 70C, this electromagnetic field loop is formed in the main body 71 surrounding the region S and arranged around the hole 72. Therefore, the magnetic flux density of this electromagnetic field loop is lower than the magnetic flux density of an electromagnetic field loop formed when only the main body 71 is arranged in the region S without the hole 72. Consequently, electromagnetic field coupling between the first and second inductors can be effectively suppressed.

[0127] Figure 5This figure shows a fourth example of the arrangement relationship between two inductors and the metal shield plate 70. This figure illustrates the arrangement relationship between the second inductor of the matching circuit 51 and the third inductor of the matching circuit 53, and the metal shield plate 70. As shown in this figure, when looking down at the module substrate 91, the second inductor and the third inductor are each arranged between two adjacent joints 73 of the metal shield plate 70.

[0128] This allows the second and third inductors to be arranged closer to the main body 71 of the metal shield 70. This strengthens the electromagnetic field shielding function of the metal shield 70 with respect to the second and third inductors.

[0129] It should be noted that Figures 4A to 4C 、 Figure 5 The first inductor shown is arranged in any one of the transmission path, reception path, and transceiver path, and the second inductor is arranged in any one of the transmission path, reception path, and transceiver path except the path where the first inductor is arranged.

[0130] Figure 6 1 are a plan view and a cross-sectional view of a high-frequency module 1B according to a first modification of the first embodiment. Figure 6 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 6 (b) shows Figure 6 A cross-sectional view taken along line VI-VI of (a) A high-frequency module 1B according to this modification specifically illustrates the arrangement of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0131] like Figure 6 As shown, the high-frequency module 1B of this modified example is Figure 1 In addition to the circuit structure shown, the high-frequency module 1B of this variation further includes a module substrate 91, a metal shield plate 70, a metal shield layer 95, a resin member 92, and external connection terminals 150. The high-frequency module 1B of this variation differs from the high-frequency module 1A of the first embodiment in the arrangement of the matching circuit 53 and the duplexer 30. The following description of the points common to the high-frequency module 1A of the first embodiment will be omitted, and the description will focus on the differences.

[0132] The third inductor of the matching circuit 53 is an example of a third member having electrodes on its side surfaces.

[0133] The duplexer 30 is an example of a fourth member having electrodes on the bottom surface and no electrodes on the side surfaces.

[0134] The third inductor of the matching circuit 53 is arranged in the region P of the main surface 91 a , and the duplexer 30 is arranged in the region Q of the main surface 91 a .

[0135] Here, as Figure 6 As shown, when looking down at module substrate 91, no conductive member is disposed between the third inductor of matching circuit 53 and metal shield 70, and no conductive member is disposed between duplexer 30 and metal shield 70. In this case, distance D1 between the third inductor of matching circuit 53 and metal shield 70 is greater than distance D2 between duplexer 30 and metal shield 70.

[0136] Thus, since solder is attached to the side surfaces of the third inductor with side electrodes, these side surfaces easily contact the main body 71 of the metal shield 70 through the solder. In contrast, since solder is not attached to the side surfaces of the duplexer 30 without side electrodes, these side surfaces and the main body 71 of the metal shield 70 do not contact each other through the solder even when they are brought into close proximity. In contrast, in the high-frequency module 1B of this modified example, the distance D1 between the third inductor and the metal shield 70 is greater than the distance D2 between the duplexer 30 and the metal shield 70. This prevents contact between the third inductor and the main body 71 through the solder.

[0137] Note that the third component having electrodes on the side surfaces is not limited to the third inductor of the matching circuit 53. Furthermore, the fourth component having electrodes on the bottom surface and no electrodes on the side surfaces is not limited to the duplexer 30.

[0138] Figure 7A 1 and 2 are a plan view and a cross-sectional view of a high-frequency module 1C according to a second modification of the first embodiment. Figure 7A (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 7A (b) shows Figure 7A A high-frequency module 1C according to this modification specifically illustrates the arrangement of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0139] like Figure 7A As shown, the high-frequency module 1C of this modified example is Figure 1 In addition to the circuit structure shown, the high-frequency module 1C of this variation further includes a module substrate 91, a metal shield plate 70A, a metal shield layer 95, a resin member 92, and external connection terminals 150. The high-frequency module 1C of this variation differs from the high-frequency module 1A of the first embodiment in the arrangement of the metal shield plate 70A. The following description of the points common to the high-frequency module 1A of the first embodiment will be omitted, and the description will focus on the differences.

[0140] The metal shield plate 70A is an example of a first metal shield plate and is a metal wall member extending upward from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis side. The metal shield plate 70A is in contact with the ground electrode on the main surface 91a and the metal shield layer 95. Specifically, the metal shield plate 70A is grounded at at least two locations, one above and one below, thereby enhancing the electromagnetic field shielding function.

[0141] In addition, the metal shield plate 70A divides the main surface 91a into a region P and a region Q. Figure 7A As shown in (a), the power amplifier 10, PA control circuit 15, matching circuits 51 and 53, and switch 41 are arranged in region P of the main surface 91a. In addition, the low-noise amplifier 20, duplexers 30 and 35, matching circuits 50, 52, and 54, and switches 40 and 42 are arranged in region Q of the main surface 91a.

[0142] The metal shielding plate 70A includes: a main body portion 71, which is erected from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction); and a joining portion 73, which extends on the main surface 91a toward the negative direction of the x-axis (on the side of region P) and is joined to the ground electrode (not shown) on the main surface 91a.

[0143] The third inductor of the matching circuit 53 is an example of a first member having electrodes on the side surfaces.

[0144] The duplexer 30 is an example of a second member having electrodes on the bottom surface and no electrodes on the side surfaces.

[0145] The third inductor of the matching circuit 53 is arranged in the region P of the main surface 91 a , and the duplexer 30 is arranged in the region Q of the main surface 91 a .

[0146] Here, as Figure 7A As shown, when looking down at module substrate 91, no conductive member is disposed between the third inductor of matching circuit 53 and metal shield 70A, nor is any conductive member disposed between duplexer 30 and metal shield 70A. In this case, junction 73 is disposed between the third inductor and main body 71, but not between duplexer 30 and main body 71.

[0147] As a result, the joint portion 73 of the metal shield plate 70A extends toward the negative x-axis direction (region P). Therefore, during the process of erecting the metal shield plate 70A on the main surface 91a, the main body 71 is unlikely to fall toward the region P where the joint portion 73 is located, but is likely to fall toward the region Q where the joint portion 73 is not located. In response to this, in the high-frequency module 1C of this modified example, a third inductor having side electrodes is disposed on the region P side, where the main body 71 is less likely to fall, and a duplexer without side electrodes is disposed on the region Q side where the main body 71 is more likely to fall. Therefore, even if the main body 71 falls and contacts the duplexer 30, contact via solder is suppressed.

[0148] It should be noted that in Figure 7A In the high-frequency module 1C shown, any of the metal shields 70D, 70E, or 70F can be arranged in place of the metal shield 70A. Specifically, when viewing the module substrate 91 from above, no conductive member is arranged between the third inductor of the matching circuit 53 and the metal shield 70D, nor is any conductive member arranged between the duplexer 30 and the metal shield 70D. In this case, the main body end 77 is arranged between the third inductor and the main body 71, not between the duplexer 30 and the main body 71. This prevents contact between the main body 71 and the duplexer 30, even if the main body 71 falls and contacts the duplexer 30.

[0149] Figure 7B FIG. 1 is a top view of a high-frequency module 1H according to a third modification of the first embodiment. Figure 7B , a circuit component arrangement diagram is shown when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. A high-frequency module 1H of this modification specifically shows the arrangement structure of each circuit component constituting the high-frequency module 1 of the embodiment.

[0150] like Figure 7B As shown, the high-frequency module 1H of this modified example is Figure 1 In addition to the circuit structure shown, the high-frequency module 1H of this modification further includes a module substrate 91, a metal shield plate 70A, a metal shield layer 95, a resin member 92, and external connection terminals 150. The high-frequency module 1H of this modification differs from the high-frequency module 1C of Modification 2 in the structure of the metal shield plate 70A. The following description of the points common to the high-frequency module 1C of Modification 2 will be omitted, and the description will focus on the differences.

[0151] The metal shield plate 70A is an example of a first metal shield plate and is a metal wall member extending upward from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis side. The metal shield plate 70A is in contact with the ground electrode on the main surface 91a and the metal shield layer 95. Specifically, the metal shield plate 70A is grounded at at least two locations, one above and one below, thereby enhancing the electromagnetic field shielding function.

[0152] The metal shielding plate 70A includes: a main body portion 71, which is erected from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction); and a joining portion 73, which extends on the main surface 91a in the negative x-axis direction (on the side of region P) and is joined to the ground electrode (not shown) on the main surface 91a.

[0153] The metal shield plate 70A divides the main surface 91a into a region P and a region Q. Figure 7B As shown, power amplifier 10, PA control circuit 15, matching circuits 51 and 53, and switch 41 are arranged in region P of main surface 91a. Low noise amplifier 20, duplexers 30 and 35, matching circuits 50, 52 and 54, and switches 40 and 42 are arranged in region Q of main surface 91a.

[0154] Here, the junction 73 is not arranged in the region between the matching circuit 51 and the main body 71 , the region between the matching circuit 53 and the main body 71 , and the region between the switch 41 and the main body 71 , but is arranged in regions other than these regions.

[0155] This allows the matching circuits 51 and 53 and the switch 41 to be arranged closer to the main body 71. Therefore, the electromagnetic field shielding function of the metal shield 70A with respect to the matching circuits 51 and 53 and the switch 41 can be enhanced.

[0156] It should be noted that in Figure 7B In the embodiment, the joint portion 73 is arranged at two locations, but may be arranged at one location or more.

[0157] Figure 8 1 and 2 are a plan view and a cross-sectional view of a high-frequency module 1D according to a fourth modification of the first embodiment. Figure 8 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 8 (b) shows Figure 8 A cross-sectional view taken along line VIII-VIII of (a) A high-frequency module 1D according to this modification specifically illustrates the arrangement of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0158] like Figure 8 As shown, the high-frequency module 1D of this modified example is Figure 1In addition to the circuit structure shown, the high-frequency module 1D of this variation further includes a module substrate 91, a metal shield plate 70, a metal shield layer 95, a resin member 92, and external connection terminals 150. The high-frequency module 1D of this variation differs from the high-frequency module 1A of the first embodiment in the arrangement of the duplexer 30. The following description of the points in which the high-frequency module 1D of this variation shares similarities with the high-frequency module 1A of the first embodiment will be omitted, and the description will focus on the differences.

[0159] The duplexer 30 is disposed on the main surface 91 a . The bottom surface electrode of the duplexer 30 is connected to the electrode on the main surface 91 a , and the top surface of the duplexer 30 is in contact with the metal shield layer 95 .

[0160] Therefore, during the manufacturing process, when the resin member 92 is formed, the top surface of the resin member 92 can be polished, for example, by chemical mechanical polishing, to expose the top surface of the duplexer 30 from the resin member 92. Subsequently, the metal shield layer 95 can be formed directly on the top surface of the duplexer 30. This allows for a lower-profile high-frequency module 1D and enhanced grounding and heat dissipation of the duplexer 30.

[0161] Note that at least one of the transmission filters 31 and 32 constituting the duplexer 30 may be an elastic wave filter. This enhances the heat dissipation of the elastic wave filter, thereby reducing frequency drift caused by temperature changes of the elastic wave filter.

[0162] In addition, the duplexer 30 is arranged between the matching circuit 53 and the matching circuit 52 in a plan view of the module substrate 91. That is, the duplexer 30 may be arranged between the first inductor and the second inductor.

[0163] Thus, the first and second inductors are arranged across not only the metal shield 70 set to ground potential but also the duplexer 30 whose top surface is set to ground potential. This further suppresses electromagnetic field coupling between the first and second inductors.

[0164] It should be noted that the circuit component whose top surface is in contact with the metal shield layer 95 is not limited to the duplexer 30 .

[0165] Figure 9 1 and 2 are a plan view and a cross-sectional view of a high-frequency module 1E according to a fifth modification of the first embodiment. Figure 9 (a) shows the arrangement of the metal shield plate 70, the matching circuit 51, and the ground electrode 91g when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 9 (b) shows Figure 9Cross-sectional view taken along line IX-IX in (a). A high-frequency module 1E of this variation specifically illustrates the arrangement of the circuit components that make up the high-frequency module 1 of the embodiment. Compared to the high-frequency module 1A of the first embodiment, the arrangement of the metal shield plate 70, matching circuit 51, and ground electrode 91g differs in this variation. The following description of the points common to the high-frequency module 1A of the first embodiment will be omitted, and the discussion will focus on the differences.

[0166] The metal shield plate 70 includes a main body portion 71 (not shown) rising from the main surface 91a toward the top surface of the resin member 92 (along the z-axis direction) and a joint portion 73 extending on the main surface 91a in the positive x-axis direction (toward the region Q).

[0167] The inductor included in matching circuit 51 is an example of a fifth component having a signal electrode 51h and a ground electrode 51g for inputting and outputting high-frequency signals. Here, the distance between the ground electrode 51g of the inductor in matching circuit 51 and the metal shield 70 is smaller than the distance between the signal electrode 51h of the inductor in matching circuit 51 and the metal shield 70.

[0168] As a result, in the inductor of matching circuit 51, ground electrode 51g is positioned closer to metal shield 70 than signal electrode 51h. Therefore, during the manufacturing process, signal electrode 51h is less likely to come into contact with metal shield 70 than ground electrode 51g. Even if ground electrode 51g comes into contact with metal shield 70, since they are at the same ground potential, the electrical characteristics of high-frequency module 1E are not affected. Consequently, any degradation of the electrical characteristics of high-frequency module 1E due to contact between signal electrode 51h and metal shield 70 can be suppressed.

[0169] Alternatively, the ground electrode 51 g of the inductor of the matching circuit 51 and the metal shield plate 70 may be joined to the same ground electrode 91 g formed on the main surface 91 a .

[0170] This allows reducing the area of the ground electrode 91 g formed on the main surface 91 a connecting the ground electrode 51 g and the metal shield plate 70 , thereby enabling saving the area of the module substrate 91 .

[0171] (Implementation Method 2)

[0172] In this embodiment, a structure in which a plurality of metal shield plates are arranged on the main surface 91 a of the high-frequency module 1 will be described.

[0173] [2.1 Circuit Component Arrangement Structure of High-Frequency Module 1F According to Second Embodiment]

[0174] Figure 101F is a top view of a high-frequency module 1F according to the second embodiment. Figure 10 , a diagram showing the arrangement of circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. The high-frequency module 1F specifically shows the configuration of Figure 1 The arrangement structure of each circuit component of the high-frequency module 1 is shown.

[0175] like Figure 10 As shown, the high-frequency module 1F of this embodiment is Figure 1 In addition to the circuit structure shown, the high-frequency module 1F of this embodiment further includes a module substrate 91, metal shield plates 70 and 74, a metal shield layer 95, a resin member 92 (not shown), and external connection terminals 150 (not shown). The high-frequency module 1F of this embodiment differs from the high-frequency module 1A of the first embodiment in that it includes a metal shield plate 74. The following description of the points common to the high-frequency module 1A of the first embodiment will be omitted, and the description will focus on the differences.

[0176] The metal shielding plate 74 is an example of a third metal shielding plate and is a metal wall body that rises from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis direction. The metal shielding plate 74 is connected to the ground electrode of the main surface 91a and the metal shielding layer 95. In other words, the metal shielding plate 74 is grounded at at least two locations above and below it, thereby enhancing the electromagnetic field shielding function. It should be noted that the metal shielding plate 74 can also be connected to the ground electrode of the main surface 91a and the shielding surface of the metal shielding layer 95 that is in contact with the top surface of the resin member 92. In addition, it can also be connected to the ground electrode of the main surface 91a and the shielding surface of the metal shielding layer 95 that is in contact with the side surface of the resin member 92.

[0177] In this embodiment, matching circuit 50 is configured in the transmit / receive path CTR connecting antenna connection terminal 100 and common terminal 40a of switch 40 and includes a first inductor. Furthermore, matching circuit 51 is configured in the transmit path AT connecting transmit input terminal 110 and common terminal 40a of switch 40 and includes a second inductor. Furthermore, matching circuit 52 is configured in the receive path AR connecting receive output terminal 120 and common terminal 40a of switch 40 and includes a third inductor.

[0178] Here, as Figure 10 As shown, the metal shield plate 70 is disposed on the main surface 91a and, when viewed from above the module substrate 91, is disposed between the first inductor of the matching circuit 50 and the second inductor of the matching circuit 51. Furthermore, the metal shield plate 74 is disposed on the main surface 91a and, when viewed from above the module substrate 91, is disposed between the first inductor of the matching circuit 50 and the third inductor of the matching circuit 52.

[0179] That is, the metal shield plates 70 and 74 divide the main surface 91a into the region P, the region Q, and the region R. Figure 10 As shown, the power amplifier 10, PA control circuit 15, matching circuits 51 and 53, and switch 41 are arranged in region P of the main surface 91a. Furthermore, the duplexers 30 and 35, the matching circuit 50, and the switch 40 are arranged in region Q of the main surface 91a. Furthermore, the low-noise amplifier 20, matching circuits 52 and 54, and the switch 42 are arranged in region R of the main surface 91a.

[0180] Thus, the second inductor configured in the transmit path AT and the first inductor configured in the transmit / receive path CTR are arranged across a metal shield plate 70 set to ground potential, thereby suppressing electromagnetic field coupling between the first and second inductors. Furthermore, the first inductor configured in the transmit / receive path CTR and the third inductor configured in the receive path AR are arranged across a metal shield plate 74 set to ground potential, thereby suppressing electromagnetic field coupling between the first and third inductors. Consequently, it is possible to prevent a high-output transmit signal amplified by the power amplifier 10 and superimposed with higher harmonic components from being output from the antenna connection terminal 100 without passing through the transmit filter 31, thereby reducing transmit signal quality. Furthermore, it is possible to further suppress unwanted waves, such as these higher harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, from flowing into the receive paths AR or BR due to the electromagnetic field coupling, thereby degrading reception sensitivity.

[0181] Note that, in this embodiment, when the module substrate 91 is viewed from above, the low-noise amplifier 20 , the matching circuits 52 and 54 , and the switch 42 arranged in the reception paths AR and BR are surrounded by the metal shield plate 74 .

[0182] This makes it possible to highly suppress the high-output transmission signal, its harmonics, and intermodulation distortion components from flowing into the reception paths AR and BR.

[0183] It should be noted that the metal shield 74 may include at least one of the matching circuits 52 and 54. In this way, the metal shield 74 can also be used to separate the inductors that are most likely to cause electromagnetic field coupling among the circuit components.

[0184] It should be noted that, instead of the metal shield plate 74 or in addition to the metal shield plate 74 , the metal shield plate 70 may surround at least one of the matching circuits 51 and 53 in a plan view of the module substrate 91 .

[0185] Alternatively, the metal shield plate 70 may be provided in place of the metal shield plate 74 or in addition to the metal shield plate 74 so as to surround the matching circuit 50 in a plan view of the module substrate 91 .

[0186] This prevents a high-output transmission signal with harmonics superimposed thereon from being output from the antenna connection terminal 100 and thereby reducing the quality of the transmission signal. Furthermore, it prevents a high-output transmission signal, its harmonics, and intermodulation distortion components from flowing into the reception paths AR and BR and thereby reducing reception sensitivity.

[0187] It should be noted that, in the structure where the metal shielding plate 70 or 74 surrounds the circuit components, a portion of the metal shielding plate may also be the metal shielding layer 95 .

[0188] [2.2 Circuit Component Arrangement Structure of High-Frequency Module 1G of Modification Example]

[0189] Figure 11 1 is a top view and a cross-sectional view of a high-frequency module 1G according to a modified example of the second embodiment. Figure 11 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 11 (b) shows Figure 11 A cross-sectional view taken along line XI-XI of FIG. 1A and FIG. 1G of a high-frequency module according to this modification specifically illustrates the arrangement of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0190] like Figure 11 As shown, the high-frequency module 1G of this modified example is Figure 1 In addition to the circuit structure shown, the high-frequency module 1G of this variation further includes a module substrate 91, metal shield plates 75a to 75d, 76a, and 76b, a metal shield layer 95, a resin member 92 (not shown), and external connection terminals 150 (not shown). The high-frequency module 1G of this variation differs from the high-frequency module 1F of the second embodiment in the structure of the metal shield plate. The following description of the points common to the high-frequency module 1F of the second embodiment will be omitted, and the description will focus on the differences.

[0191] The metal shield plates 75a and 75c are examples of first metal shield plates and are metal walls rising from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis direction. The metal shield plates 75a and 75c are in contact with the ground electrode on the main surface 91a and the metal shield layer 95, respectively.

[0192] Metal shield plates 75b and 75d are each an example of a second metal shield plate and are metal walls extending upward from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis side. Metal shield plates 75b and 75d are in contact with the ground electrode on the main surface 91a and the metal shield layer 95, respectively. Metal shield plate 75b is positioned separately from metal shield plate 75a when viewed from above the module substrate 91. Metal shield plate 75d is positioned separately from metal shield plate 75c when viewed from above the module substrate 91.

[0193] The metal shielding plates 75a and 75b have an overlapping portion when viewed in a direction normal to the metal shielding plates 75a and 75b, and the metal shielding plates 75a and 75b are parallel to each other in the overlapping portion. Furthermore, the metal shielding plates 75c and 75d have an overlapping portion when viewed in a direction normal to the metal shielding plates 75c and 75d, and the metal shielding plates 75c and 75d are parallel to each other in the overlapping portion.

[0194] According to the above configuration, the high-frequency module 1G can enhance the electromagnetic field shielding function of the metal shield plate by the overlapping portion.

[0195] In this variation, matching circuit 50 is disposed in the transceiver path CTR and includes a first inductor. Matching circuit 51 is disposed in the transmit path AT and includes a second inductor. Matching circuit 52 is disposed in the receive path AR and includes a third inductor.

[0196] Here, as Figure 11 As shown, in a plan view of the module substrate 91 , an overlapping portion of the metal shield plate 75 a and the metal shield plate 75 b is disposed between the first inductor and the second inductor.

[0197] Thus, the second inductor configured in the transmit path AT and the first inductor configured in the transmit / receive path CTR are arranged with the overlapping portion interposed therebetween, thereby further suppressing electromagnetic field coupling between the first and second inductors. Consequently, it is possible to further suppress the high-output transmit signal, amplified by the power amplifier 10 and superimposed with higher harmonic components, from being output from the antenna connection terminal 100 without passing through the transmit filter 31, thereby degrading the transmit signal quality. Furthermore, it is possible to further suppress unwanted waves, such as the higher harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, from flowing into the receive paths AR or BR due to the electromagnetic field coupling, thereby degrading the receive sensitivity.

[0198] It should be noted that the combination of the first and second inductors separated by the overlapping portion is not limited to a combination of an inductor placed in the transmit / receive path and an inductor placed in the transmit path. Alternatively, the combination of the first and second inductors may be a combination of an inductor placed in the transmit / receive path and an inductor placed in the receive path. This further prevents the high-output transmit signal amplified by the power amplifier 10 and its higher harmonic components from flowing into the receive path AR or BR via the receive filter 32 or 34, thereby degrading the receive sensitivity.

[0199] Alternatively, the combination of the first and second inductors may be a combination of an inductor arranged in the transmission path and an inductor arranged in the reception path. This further prevents the high-output transmission signal amplified by the power amplifier 10 and its higher harmonic components from flowing into the reception path AR or BR via the transmission filter 31 or 33 and the reception filter 32 or 34, thereby preventing the signal from degrading reception sensitivity.

[0200] That is, the first inductor may be arranged in any one of the transmission path, the reception path, and the transceiver path, and the second inductor may be arranged in any one of the transmission path, the reception path, and the transceiver path except the path in which the first inductor is arranged.

[0201] It should be noted that the metal shield plate 75a and the metal shield plate 75b preferably have the same shape, which can simplify the manufacturing process of the metal shield plates and reduce the manufacturing cost.

[0202] In a plan view of the module substrate 91 , the low noise amplifier 20 , the matching circuits 52 and 54 , and the switch 42 arranged in the reception paths AR and BR are surrounded by the metal shield plates 76 a and 76 b and the metal shield layer 95 .

[0203] This makes it possible to highly suppress the high-output transmission signal, its harmonics, and intermodulation distortion components from flowing into the reception paths AR and BR.

[0204] Note that the metal shield plates 76a and 76b and the metal shield layer 95 may include at least one of the matching circuits 52 and 54. This also allows the inductors, which are most susceptible to electromagnetic field coupling among the circuit components, to be arranged separately from each other.

[0205] Alternatively, at least one of the matching circuits 52 and 54 may be surrounded by only the metal shield plates 76a and 76b. This also allows the inductors, which are most susceptible to electromagnetic field coupling among the circuit components, to be arranged separately from each other.

[0206] It should be noted that although metal shield plates 76a and 76b are separate components, they maintain contact. Furthermore, when viewed from above, the angle between metal shield plates 76a and 76b is approximately 90 degrees. This structure allows metal shield plates 76a and 76b to be supported and arranged upright, allowing each circuit component to be precisely positioned on main surface 91a.

[0207] It should be noted that the metal shielding plate 70 may be formed of two metal shielding plates, instead of the metal shielding plates 76a and 76b, or in addition to the metal shielding plate 74. When looking down at the module substrate 91, at least one of the matching circuits 51 and 53 may be surrounded by these two metal shielding plates and the metal shielding layer. Alternatively, the matching circuit 50 may be surrounded by these two metal shielding plates and the metal shielding layer.

[0208] This prevents a high-output transmission signal with harmonics superimposed thereon from being output from the antenna connection terminal 100 and causing degradation in transmission signal quality. Furthermore, it prevents a high-output transmission signal, its harmonics, and intermodulation distortion components from flowing into the reception paths AR and BR and causing degradation in reception sensitivity.

[0209] It should be noted that only the two metal shield plates may surround at least one of the matching circuits 51 and 53 or the matching circuit 50. This also allows the inductors, which are most susceptible to electromagnetic field coupling among the circuit components, to be arranged separately from each other.

[0210] [3. Effects, etc.]

[0211] As described above, the high-frequency module 1A of this embodiment includes: a module substrate 91 having a main surface 91a; a first inductor and a second inductor arranged on the main surface 91a; a resin member 92 covering the main surface 91a and at least a portion of the first inductor and the second inductor; a metal shield layer 95 covering the surface of the resin member 92 and set to a ground potential; and a metal shield plate 70 arranged on the main surface 91a and between the first inductor and the second inductor when the module substrate 91 is viewed from above. The metal shield plate 70 is in contact with the ground electrode on the main surface 91a and the metal shield layer 95. An inductor is arranged in any one of the transmission path AT, the reception path AR, and the transceiver path CTR. The transmission path AT connects the transmission input terminal 110 for receiving a transmission signal from the outside and the common terminal 40a, the reception path AR connects the reception output terminal 120 for supplying a reception signal to the outside and the common terminal 40a, and the transceiver path CTR connects the antenna connection terminal 100 and the common terminal 40a. A second inductor is arranged in any one of the transmission path AT, the reception path AR, and the transceiver path CTR, excluding the path in which the first inductor is arranged.

[0212] Thus, the first and second inductors are arranged with the metal shield plate 70 set to ground potential interposed therebetween, thereby suppressing electromagnetic field coupling between the first and second inductors. Consequently, for example, it is possible to prevent a high-output transmit signal amplified by the power amplifier 10 and superimposed with higher harmonic components from being output from the antenna connection terminal 100 without passing through the transmit filter 31, thereby reducing transmit signal quality. Furthermore, it is possible to prevent unwanted waves, such as these higher harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, from flowing into the receive path AR due to the electromagnetic field coupling described above, thereby reducing receive sensitivity.

[0213] In the high-frequency module 1A, the metal shield plate 70A may be erected from the main surface 91a toward the top surface of the resin member 92 , and a hole 72 may be formed between the metal shield plate 70A and the main surface 91a , penetrating the metal shield plate 70A in a normal direction thereof.

[0214] Thus, the hole 72 is formed between the main body 71 and the main surface 91a. Therefore, during the step of forming the resin member 92 on the main surface 91a, good fluidity of the liquid resin near the metal shield 70A can be ensured. Consequently, the formation of voids near the metal shield 70A due to the lack of the resin member 92 can be suppressed.

[0215] In the high-frequency module 1A, the main body 71 of the metal shield plate 70 may be disposed between adjacent holes 72 in the region S where the first inductor and the second inductor face each other in a plan view of the module substrate 91 .

[0216] Thus, the high-intensity electromagnetic field among the electromagnetic fields formed by the first and second inductors can be cut off by the main body 71. Therefore, electromagnetic field coupling between the first and second inductors can be effectively suppressed.

[0217] In the high-frequency module 1A, the metal shield plate 70B may be erected from the main surface 91 a toward the top surface of the resin member 92 , and a hole 72 may be formed between the metal shield plate 70B and the top surface, penetrating the metal shield plate 70B in a normal direction thereof.

[0218] Thus, the hole 72 is formed between the main body 71 and the top surface. This ensures good fluidity of the liquid resin near the metal shield 70B during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield 70B where the resin member 92 is not formed. Furthermore, since the hole 72 is not formed in the area in contact with the main surface 91a (the area below the main body 71), isolation between circuit components arranged on the main surface 91a via the metal shield 70B is improved.

[0219] In addition, the metal shield plate 70 may also include: a main body portion 71, which is arranged to stand from the main surface 91a toward the top surface of the resin member 92; and a bonding portion 73, which is extended parallel to the main surface 91a on the main surface 91a side and bonded to the ground electrode of the main surface 91a.

[0220] Thus, the metal shield plate 70 and the main surface 91 a are bonded together via the bonding portion 73 , thereby improving the placement accuracy of the metal shield plate 70 and the bonding strength between the metal shield plate 70 and the main surface 91 a .

[0221] In addition, the high-frequency module 1C of the second variant of the first embodiment may include a first component and a second component arranged on the main surface 91a, the first component having an electrode on the side surface, the second component having an electrode on the bottom surface, and no electrode on the side surface, and when looking down at the module substrate 91, no conductive member is arranged between the first component and the metal shielding plate 70A, no conductive member is arranged between the second component and the metal shielding plate 70A, and the joint 73 is arranged between the first component and the main body 71, and not between the second component and the main body 71.

[0222] As a result, the joint portion 73 of the metal shield plate 70A extends toward the region P. Therefore, during the process of erecting the metal shield plate 70A on the main surface 91a, it is likely to fall toward the region Q, where the joint portion 73 is absent. To address this issue, in the high-frequency module 1C, the first component is positioned on the region P side, where the main body 71 is less likely to fall, and the second component is positioned on the region Q side, where the main body 71 is more likely to fall. Therefore, even if the main body 71 falls and contacts the first component, electrical contact via solder is prevented.

[0223] In addition, the metal shielding plate 70 may also include: a flat-plate main body portion 71, which is erected from the main surface 91a toward the top surface of the resin component 92 and is connected to the ground electrode of the main surface 91a; and a flat-plate main body end portion 77, which is arranged at the end of the main body portion 71 in a direction parallel to the main surface 91a and is erected from the main surface 91a toward the top surface of the resin component 92, and the main body portion 71 and the main body end portion 77 are not parallel.

[0224] Thus, since the main body 71 and the main body end 77 are not parallel, the metal shield 70 can be ensured to be self-supporting on the main surface 91a. In addition, since the joint 73 is not present, the arrangement space of the metal shield 70 can be reduced.

[0225] In addition, the high-frequency module 1C of the second variant of the first embodiment may also include a first component and a second component arranged on the main surface 91a, the first component has an electrode on the side surface, the second component has an electrode on the bottom surface, and has no electrode on the side surface, when looking down at the module substrate 91, no conductive member is arranged between the first component and the metal shielding plate 70D, no conductive member is arranged between the second component and the metal shielding plate 70D, and the main body end 77 is arranged between the first component and the main body 71, and not between the second component and the main body 71.

[0226] As a result, the main body end 77 of the metal shield plate 70D extends toward region P. Therefore, during the process of erecting the metal shield plate 70D on the main surface 91a, it is likely to fall toward region Q, where the main body end 77 is absent. To address this issue, in the high-frequency module 1C, the first component is positioned on region P, where the main body 71 is less likely to fall, and the second component is positioned on region Q, where the main body 71 is more likely to fall. Therefore, even if the main body 71 falls and contacts the first component, electrical contact via solder is prevented.

[0227] Furthermore, the high-frequency module 1G according to the modified example of the second embodiment may further include a metal shield plate 75 b that is arranged separately from the metal shield plate 75 a in a plan view of the module substrate 91 .

[0228] In the high-frequency module 1G, the metal shield plates 75a and 75b may have an overlapping portion when viewed in the normal direction of the metal shield plates 75a and 75b, and the metal shield plates 75a and 75b may be parallel to each other at the overlapping portion.

[0229] Thus, the electromagnetic field shielding function of the metal shielding plate can be enhanced by the overlapping portion.

[0230] In the high-frequency module 1G, the overlapping portion may be arranged between the first inductor and the second inductor when the module substrate 91 is viewed in plan.

[0231] Thus, the first inductor and the second inductor are arranged with the overlapping portion interposed therebetween, and therefore, electromagnetic field coupling between the first inductor and the second inductor can be further suppressed.

[0232] In addition, in the high-frequency module 1G, the metal shield plate 75 a and the metal shield plate 75 b may have the same shape.

[0233] This simplifies the manufacturing process of the metal shield plate and reduces the manufacturing cost.

[0234] In the high-frequency module 1G, the inductor of the matching circuit 52 may be surrounded by the metal shield plates 76 a and 76 b and the metal shield layer 95 in a plan view of the module substrate 91 .

[0235] In the high-frequency module 1F, the inductor of the matching circuit 52 may be surrounded by the metal shield plate 74 when the module substrate 91 is viewed from above.

[0236] This makes it possible to highly suppress a high-output transmission signal, its harmonics, and intermodulation distortion components from flowing into the reception path AR.

[0237] Alternatively, in the high-frequency module 1B, the third inductor of the matching circuit 53 may have electrodes on the side surfaces, the duplexer 30 may have electrodes on the bottom surface and no electrodes on the side surfaces, and when looking down at the module substrate 91, no conductive member may be disposed between the third inductor and the metal shielding plate 70, and no conductive member may be disposed between the duplexer 30 and the metal shielding plate 70, and the distance D1 between the third inductor and the metal shielding plate 70 may be greater than the distance D2 between the duplexer 30 and the metal shielding plate 70.

[0238] This facilitates solder contact between the side surfaces of the third inductor and the main body 71 of the metal shield 70. In contrast, even when the side surfaces of the duplexer 30 and the main body 71 of the metal shield 70 are in close proximity, they do not contact each other via solder. Therefore, by making the distance D1 greater than the distance D2, solder contact between the third inductor and the main body 71 can be suppressed.

[0239] In the high-frequency module 1D, the bottom surface electrode of the duplexer 30 may be connected to the electrode of the main surface 91 a , and the top surface of the duplexer 30 may be in contact with the metal shield layer 95 .

[0240] Thus, during the manufacturing process, by polishing the top surface of the resin member 92, the top surface of the duplexer 30 can be exposed from the resin member 92. Subsequently, the metal shield layer 95 can be formed directly on the top surface of the duplexer 30. This allows the high-frequency module 1D to have a lower profile, while also enhancing the grounding and heat dissipation properties of the duplexer 30.

[0241] In the high-frequency module 1D, the duplexer 30 may be an elastic wave filter.

[0242] This enhances the heat dissipation of the elastic wave filter, thereby reducing frequency drift caused by temperature changes in the elastic wave filter.

[0243] In addition, in the high-frequency module 1D, the duplexer 30 may be arranged between the first inductor and the second inductor in a plan view of the module substrate 91 .

[0244] Thus, the first and second inductors are arranged across not only the metal shield 70 set to ground potential but also the duplexer 30 whose top surface is set to ground potential. This further suppresses electromagnetic field coupling between the first and second inductors.

[0245] In the high-frequency module 1E, the second inductor of the matching circuit 51 may include a signal electrode 51h and a ground electrode 51g on the bottom surface, and the distance between the ground electrode 51g and the metal shield plate 70 may be smaller than the distance between the signal electrode 51h and the metal shield plate 70 .

[0246] Therefore, during the manufacturing process, the signal electrode 51h is less likely to come into contact with the metal shield plate 70 than the ground electrode 51g. Even if the ground electrode 51g does come into contact with the metal shield plate 70, since they are at the same ground potential, this does not affect the electrical characteristics of the high-frequency module 1E. Consequently, it is possible to prevent the signal electrode 51h from coming into contact with the metal shield plate 70, thereby preventing degradation of the electrical characteristics of the high-frequency module 1E.

[0247] In addition, in the high-frequency module 1E, the ground electrode 51 g and the metal shield plate 70 may be joined to the same ground electrode 91 g formed on the main surface 91 a .

[0248] This allows reducing the area of the ground electrode 91 g formed on the main surface 91 a connecting the ground electrode 51 g and the metal shield plate 70 , thereby enabling saving the area of the module substrate 91 .

[0249] In addition, the high-frequency module 1F may further include a third inductor arranged on the main surface 91a, and a metal shielding plate 74 arranged on the main surface 91a and arranged between the third inductor and the second inductor, or between the third inductor and the first inductor when looking down at the module substrate 91, the metal shielding plate 74 being in contact with the ground electrode and the metal shielding layer 95 of the main surface 91a, and the third inductor being arranged in a path other than the path in which the first inductor is arranged and the path in which the second inductor is arranged, among the transmission path AT, the reception path AR, and the transceiver path CTR.

[0250] Thus, for example, the second inductor configured in the transmit path AT and the first inductor configured in the transmit / receive path CTR are arranged across a metal shield plate 70 set to ground potential, thereby suppressing electromagnetic field coupling between the first and second inductors. Furthermore, for example, the first inductor configured in the transmit / receive path CTR and the third inductor configured in the receive path AR are arranged across a metal shield plate 74 set to ground potential, thereby suppressing electromagnetic field coupling between the first and third inductors. Consequently, it is possible to prevent a high-output transmit signal amplified by the power amplifier 10 and superimposed with higher harmonic components from being output from the antenna connection terminal 100 without passing through the transmit filter 31, thereby reducing transmit signal quality. Furthermore, it is possible to further suppress unwanted waves, such as these higher harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, from flowing into the receive path AR due to the electromagnetic field coupling, thereby degrading reception sensitivity.

[0251] The communication device 5 also includes an RFIC 3 that processes high-frequency signals transmitted and received by the antenna 2 , and a high-frequency module 1 that transmits high-frequency signals between the antenna 2 and the RFIC 3 .

[0252] This makes it possible to provide the communication device 5 that suppresses degradation in the quality of a transmission signal or a reception signal.

[0253] (Other implementations, etc.)

[0254] While the high-frequency module and communication device of this embodiment have been described above by way of examples and variations thereof, the high-frequency module and communication device of this embodiment are not limited to the above-described embodiment and variations thereof. Other embodiments implemented by combining arbitrary components of the above-described embodiment and variations thereof, variations resulting from various modifications conceived by those skilled in the art to the above-described embodiment and variations thereof without departing from the spirit of the present invention, and various devices incorporating the above-described high-frequency module and communication device are also encompassed by the present invention.

[0255] For example, in the high-frequency modules of Embodiments 1 and 2, the circuit components constituting the high-frequency module are arranged on a single main surface of module substrate 91. However, the circuit components may be arranged separately on the first and second opposing main surfaces of the module substrate. In other words, the circuit components constituting the high-frequency module may be mounted on either one or both sides of the module substrate.

[0256] For example, in the high-frequency modules and communication devices of the above-described embodiments and their modifications, other circuit elements and wirings may be inserted between paths connecting the circuit elements and signal paths disclosed in the drawings.

[0257] Industrial applicability

[0258] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed in a front-end portion supporting multiple frequency bands.

[0259] Description of Reference Numerals

[0260] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H high frequency module;

[0261] 2 antennas;

[0262] 3 RF signal processing circuit (RFIC);

[0263] 4 baseband signal processing circuit (BBIC);

[0264] 5 communication devices;

[0265] 10 power amplifier;

[0266] 15 PA control circuit;

[0267] 20 Low noise amplifier;

[0268] 30, 35 duplexer;

[0269] 31, 33 transmit filters;

[0270] 32, 34 receive filter;

[0271] 40, 41, 42 switches;

[0272] 40a, 41a, 42a common terminals;

[0273] 40b, 40c, 41b, 41c, 42b, 42c select terminals;

[0274] 50, 51, 52, 53, 54 matching circuit;

[0275] 51h signal electrode;

[0276] 51g, 91g ground electrodes;

[0277] 60 semiconductor ICs;

[0278] 70, 70A, 70B, 70C, 70D, 70E, 70F, 74, 75a, 75b, 75c, 75d, 76a, 76b metal shielding plates;

[0279] 71 main body;

[0280] 72 holes;

[0281] 73 joint;

[0282] 77 main body end;

[0283] 91 module baseboard;

[0284] 91a, 91b main surfaces;

[0285] 92 resin components;

[0286] 95 metal shielding layer;

[0287] 100 antenna connection terminal;

[0288] 110 Send input terminal;

[0289] 120 receiving output terminal;

[0290] 130 control signal terminal;

[0291] 150 external connection terminals;

[0292] 150g ground terminal;

[0293] AR, BR receiving path;

[0294] AT, BT sending path;

[0295] CTR transmit and receive path;

[0296] P, Q, R, S areas.

Claims

1. A high-frequency module comprising: a module substrate having a main surface; a first inductor and a second inductor, which are arranged on the main surface; a resin member covering at least a portion of the main surface, the first inductor, and the second inductor; a metal shield layer covering a surface of the resin member and set to a ground potential; as well as a first metal shield plate disposed on the main surface and disposed between the first inductor and the second inductor in a plan view of the module substrate; The first metal shielding plate is in contact with the ground electrode on the main surface and the metal shielding layer. The first inductor is arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transceiver path for transmitting a transmission signal and a reception signal. The second inductor is arranged in any one of the transmission path, the reception path, and the transmission / reception path except the path in which the first inductor is arranged. The first metal shielding plate has: a main body portion standing from the main surface toward the top surface of the resin member; and a bonding portion extending parallel to the main surface on the main surface side and bonding to the ground electrode, The high-frequency module includes a first component and a second component arranged on the main surface. The first component has electrodes on the side, The second component has an electrode on the bottom surface and no electrode on the side surface, When looking down at the module substrate, No conductive member is arranged between the first component and the first metal shielding plate, No conductive member is arranged between the second component and the first metal shielding plate, The joining portion is disposed between the first member and the main body, but is not disposed between the second member and the main body.

2. The high-frequency module according to claim 1, wherein A hole is formed between the first metal shield plate and the main surface and penetrates along a normal direction of the first metal shield plate.

3. The high-frequency module according to claim 2, wherein: In a plan view of the module substrate, the first metal shield plate is arranged in a region where the first inductor and the second inductor face each other, sandwiched between the adjacent holes.

4. The high-frequency module according to claim 1, wherein A hole is formed between the first metal shielding plate and the top surface and passes through the first metal shielding plate in a normal direction of the first metal shielding plate.

5. The high-frequency module according to claim 2 or 4, wherein: The hole is disposed in a region where the first inductor and the second inductor face each other in a plan view of the module substrate.

6. The high-frequency module according to any one of claims 1 to 4, wherein: The high-frequency module further includes a second metal shield plate that is arranged to be separated from the first metal shield plate in a plan view of the module substrate.

7. The high-frequency module according to claim 6, wherein: The first metal shielding plate and the second metal shielding plate have an overlapping portion when viewed from the normal direction of the second metal shielding plate. The second metal shielding plate is parallel to the first metal shielding plate at the overlapping portion.

8. The high-frequency module according to claim 7, wherein: In a plan view of the module substrate, the overlapping portion is arranged between the first inductor and the second inductor.

9. The high-frequency module according to claim 6, wherein: The first metal shielding plate and the second metal shielding plate have the same shape.

10. The high-frequency module according to any one of claims 1 to 4, wherein: The first inductor is configured in the receiving path, In a plan view of the module substrate, the first inductor is surrounded by the first metal shield plate and the metal shield layer.

11. The high-frequency module according to any one of claims 1 to 4, wherein: The first inductor is configured in the receiving path, In a plan view of the module substrate, the first inductor is surrounded by the first metal shielding plate.

12. The high-frequency module according to any one of claims 1 to 4, wherein: The high-frequency module includes a third component and a fourth component arranged on the main surface. The third component has electrodes on the side, The fourth component has an electrode on the bottom surface and no electrode on the side surface, When looking down at the module substrate, No conductive member is arranged between the third component and the first metal shielding plate, No conductive member is arranged between the fourth component and the first metal shielding plate, The distance between the third component and the first metal shielding plate is greater than the distance between the fourth component and the first metal shielding plate.

13. The high-frequency module according to any one of claims 1 to 4, wherein: The high-frequency module includes a filter disposed on the main surface. The bottom surface electrode of the filter is connected to the electrode of the main surface, and the top surface of the filter is connected to the metal shielding layer.

14. The high-frequency module according to claim 13, wherein: The filter is an elastic wave filter.

15. The high frequency module according to claim 13, wherein The filter is arranged between the first inductor and the second inductor in a plan view of the module substrate.

16. The high-frequency module according to any one of claims 1 to 4, wherein: The high-frequency module includes a fifth member disposed on the main surface. The fifth component has a signal electrode and a ground electrode on the bottom surface for inputting and outputting high-frequency signals. The distance between the ground electrode of the fifth component and the first metal shielding plate is smaller than the distance between the signal electrode of the fifth component and the first metal shielding plate.

17. The high frequency module according to claim 16, wherein: The ground electrode of the fifth member and the first metal shield are joined to the same ground electrode formed on the main surface.

18. The high-frequency module according to any one of claims 1 to 4, wherein: The high frequency module further comprises: a third inductor disposed on the main surface; as well as a third metal shielding plate disposed on the main surface and, in a plan view of the module substrate, disposed between the third inductor and the second inductor or between the third inductor and the first inductor; The third metal shielding plate is in contact with the ground electrode on the main surface and the metal shielding layer. The third inductor is arranged in a path other than the path in which the first inductor is arranged and the path in which the second inductor is arranged, among the transmission path, the reception path, and the transceiver path.

19. A high-frequency module comprising: a module substrate having a main surface; a first inductor and a second inductor, which are arranged on the main surface; a resin member covering at least a portion of the main surface, the first inductor, and the second inductor; a metal shield layer covering a surface of the resin member and set to a ground potential; as well as a first metal shield plate disposed on the main surface and disposed between the first inductor and the second inductor in a plan view of the module substrate; The first metal shielding plate is in contact with the ground electrode on the main surface and the metal shielding layer. The first inductor is arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transceiver path for transmitting a transmission signal and a reception signal. The second inductor is arranged in any one of the transmission path, the reception path, and the transmission / reception path except the path in which the first inductor is arranged. The first metal shielding plate comprises: a flat plate-shaped main body portion that stands upright from the main surface toward the top surface of the resin member and is joined to the ground electrode; and a flat plate-shaped main body end portion, which is arranged at an end portion of the main body portion in a direction parallel to the main surface and is erected from the main surface toward the top surface of the resin member; The main body portion is not parallel to the main body end portion, The high-frequency module includes a first component and a second component arranged on the main surface. The first component has electrodes on the side, The second component has an electrode on the bottom surface and no electrode on the side surface, When looking down at the module substrate, No conductive member is arranged between the first component and the first metal shielding plate, No conductive member is arranged between the second component and the first metal shielding plate, The main body end portion is disposed between the first component and the main body portion, and is not disposed between the second component and the main body portion.

20. A communication device comprising: an RF signal processing circuit that processes the high-frequency signal transmitted and received by the antenna; and The high-frequency module according to any one of claims 1 to 19, wherein the high-frequency signal is transmitted between the antenna and the RF signal processing circuit.

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