High-frequency module and communication device

Abstract

The high-frequency module (1) includes: a module substrate (91) having a main surface (91a); a conductive member (93) that divides the main surface (91a) into a region (R1), a region (R2), and a region (R3) in a plan view of the main surface (91a) and is set to a ground potential; a switch (51) disposed in the region (R2) and connected to an antenna connection terminal (100); a power amplifier (11) disposed in the region (R1) and connected to the antenna connection terminal (100) via the switch (51); and a low-noise amplifier (21) disposed in the region (R3) and connected to the antenna connection terminal (100) via the switch (51).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as mobile phones, particularly with the development of multi-band, the configuration structure of circuit elements constituting a high-frequency front-end circuit has become complicated.

[0003] In Patent Document 1, a communication module having a shielding wall is disclosed. The shielding wall is formed to divide the mounting area of one or both of the system unit and the power supply circuit unit and the mounting area of the high-frequency processing unit. Thereby, it is possible to suppress the intrusion of noise from the system unit and the power supply circuit unit into the high-frequency processing unit and to miniaturize the communication module.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-111747 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] However, in the above-described prior art, the inflow of noise into the high-frequency signal cannot sometimes be sufficiently suppressed.

[0009] Therefore, an object of the present invention is to provide a high-frequency module and a communication device capable of suppressing the inflow of noise into a high-frequency signal.

[0010] Means for Solving the Problems

[0011] A high-frequency module according to one aspect of the present invention includes: a module substrate having a main surface; a conductive member that divides the main surface into a first region, a second region, and a third region in a plan view of the main surface and is set to a ground potential; a first switch disposed in the second region and connected to an antenna connection terminal; a power amplifier disposed in the first region and connected to the antenna connection terminal via the first switch; and a low-noise amplifier disposed in the third region and connected to the antenna connection terminal via the first switch.

[0012] In addition, a communication device according to one aspect of the present invention includes: a signal processing circuit that processes a high-frequency signal; and the high-frequency module according to the above aspect that transmits the high-frequency signal processed by the signal processing circuit.

[0013] Advantages of the Invention

[0014] According to the present invention, the inflow of noise into the high-frequency signal can be suppressed. Brief Description of the Drawings

[0015] Figure 1 The circuit structure diagrams of the high-frequency module and the communication device according to the embodiment.

[0016] Figure 2 The top view of the high-frequency module according to the embodiment.

[0017] Figure 3 is Figure 2 The cross-sectional view of the high-frequency module according to the embodiment at the III-III line.

[0018] Figure 4 is Figure 2 The cross-sectional view of the high-frequency module according to the embodiment at the IV-IV line.

[0019] Figure 5 is Figure 2 The cross-sectional view of the high-frequency module according to the embodiment at the V-V line.

[0020] Figure 6 The top view of the high-frequency module according to Variation 1.

[0021] Figure 7 The top view of the high-frequency module according to Variation 2.

[0022] Figure 8 The top view of the high-frequency module according to Variation 3.

[0023] Figure 9 The top view of the high-frequency module according to Variation 4.

[0024] Figure 10 The top view of the high-frequency module according to Variation 5.

[0025] Figure 11 The top view of the high-frequency module according to Variation 6. Detailed Embodiment

[0026] Hereinafter, the high-frequency module and the communication device according to the embodiment of the present invention will be described in detail with reference to the drawings. In addition, all the embodiments described below show a specific example of the present invention. Therefore, the numerical values, shapes, materials, constituent elements, arrangements of the constituent elements, connection methods, etc. shown in the following embodiments are examples, and the gist thereof is not intended to limit the present invention. Thus, among the constituent elements in the following embodiments, the constituent elements not described in the independent claims are described as optional constituent elements.

[0027] In addition, the figures are schematic diagrams and are not necessarily drawn strictly to scale. For example, the scales in the figures may not be the same. Also, in the figures, the same reference numerals are used for substantially the same structures, and repeated descriptions are omitted or simplified.

[0028] In addition, in this specification, terms indicating the relationship between elements such as parallel or perpendicular, terms indicating the shape of elements such as rectangular or straight line, and numerical ranges do not represent strictly literal expressions, but mean substantially equivalent ranges, for example, expressions that also include differences of about several percent.

[0029] In addition, in this specification, terms such as "above" and "below" do not refer to the upward direction (vertically above) and downward direction (vertically below) in absolute spatial recognition, but are used as terms defined by relative positional relationships based on the stacking order in a stacked structure. In addition, terms such as "above" and "below" apply not only to cases where two constituent elements are arranged at an interval from each other and there are other constituent elements between the two constituent elements, but also to cases where two constituent elements are arranged in close contact with each other and the two constituent elements are in contact.

[0030] In addition, in this specification and the drawings, the x-axis, y-axis, and z-axis represent the three axes of a three-dimensional orthogonal coordinate system. The x-axis and y-axis are respectively the directions parallel to the first side and the second side of the rectangle when the top view of the module substrate is rectangular, where the second side is orthogonal to the first side. The z-axis is the thickness direction of the module substrate. In addition, in this specification, the "thickness direction" of the module substrate refers to the direction perpendicular to the main surface of the module substrate.

[0031] In addition, in this specification, the term "connected" includes not only cases of direct connection through connection terminals and / or wiring conductors, but also cases of electrical connection via other circuit elements. In addition, the term "connected between A and B" means connected to both A and B between A and B.

[0032] In addition, in the component configuration of the present invention, the "top view of the module substrate" or "top view of the main surface of the module substrate" means observing the object by orthographically projecting it from the positive side of the z-axis onto the xy plane. In addition, the "distance between A and B in the top view of the module substrate" means the length of the line segment connecting the representative point in the region of A orthographically projected onto the xy plane and the representative point in the region of B. Here, as the representative point, the center point of the region or the point closest to the other region can be used, but it is not limited thereto.

[0033] In addition, the so-called "components are arranged on the substrate" includes not only the case where the components are arranged on the substrate in a state of being in contact with the substrate, but also the case where the components are arranged above the substrate without being in contact with the substrate (for example, the case where the components are stacked on other components arranged on the substrate), and the case where part or all of the components are buried in the substrate for arrangement. In addition, the so-called "components are arranged on the main surface of the substrate" includes not only the case where the components are arranged on the main surface in a state of being in contact with the main surface of the substrate, but also the case where the components are arranged above the main surface without being in contact with the main surface, and the case where part of the components are buried in the substrate from the main surface side for arrangement. The so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A.

[0034] In addition, in this specification, regarding ordinal numbers such as "first" and "second", unless otherwise specified, they do not mean the number or order of the components, but are used for the purpose of avoiding confusion of the same type of components and making distinctions.

[0035] (Embodiment)

[0036] [1. Circuit Structure of High-Frequency Module and Communication Device]

[0037] Refer to Figure 1 The circuit structures of the high-frequency module and the communication device according to the embodiment will be described. Figure 1 FIG. is a circuit structure diagram of the high-frequency module 1 and the communication device 5 according to this embodiment.

[0038] [1-1. Circuit Structure of Communication Device]

[0039] First, the circuit structure of the communication device 5 will be described. The communication device 5 is a device used in a communication system, such as a portable terminal such as a smart phone and a tablet computer. As Figure 1 shown, the communication device 5 includes a high-frequency module 1, an antenna 2, an RFIC 3, and a BBIC 4.

[0040] The high-frequency module 1 transmits high-frequency signals between the antenna 2 and the RFIC 3. The internal structure of the high-frequency module 1 will be described later.

[0041] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1, transmits the high-frequency signal output from the high-frequency module 1, and in addition, receives the high-frequency signal from the outside and outputs it to the high-frequency module 1.

[0042] RFIC3 is a signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 performs signal processing on the high-frequency received signal input via the reception path of high-frequency module 1 through down-conversion or the like, and outputs the received signal generated by performing this signal processing to BBIC4. In addition, RFIC3 performs signal processing on the transmission signal input from BBIC4 through up-conversion or the like, and outputs the high-frequency transmission signal generated by performing this signal processing to the transmission path of high-frequency module 1.

[0043] In addition, RFIC3 has a control unit that controls switches, amplifiers, etc. provided in high-frequency module 1. Part or all of the functions of RFIC3 as a control unit may also be provided outside RFIC3. For example, it may be provided in BBIC4 or high-frequency module 1.

[0044] BBIC4 is a baseband signal processing circuit that processes signals using an intermediate frequency band that is lower in frequency than the high-frequency signals transmitted by high-frequency module 1. As signals processed by BBIC4, for example, image signals for image display and / or voice signals for calls via a speaker can be used.

[0045] In addition, in communication device 5 according to the present embodiment, antenna 2 and BBIC4 are not essential components.

[0046] [1-2. Circuit Structure of High-Frequency Module]

[0047] Next, the circuit structure of high-frequency module 1 will be described. As Figure 1 shown, high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, switches 51 to 53, duplexers 61 to 63, antenna connection terminal 100, high-frequency input terminals 111 and 112, and high-frequency output terminals 121 and 122.

[0048] Antenna connection terminal 100 is connected to antenna 2.

[0049] High-frequency input terminals 111 and 112 are each terminals for receiving high-frequency transmission signals from the outside of high-frequency module 1. In the present embodiment, high-frequency input terminal 111 is a terminal for receiving transmission signals in communication bands A and B from RFIC3. High-frequency input terminal 112 is a terminal for receiving transmission signals in communication band C from RFIC3.

[0050] The high-frequency output terminals 121 and 122 are each terminals for providing a high-frequency reception signal to the outside of the high-frequency module 1. In the present embodiment, the high-frequency output terminal 121 is a terminal for providing reception signals in communication bands A and B to the RFIC 3. The high-frequency output terminal 122 is a terminal for providing a reception signal in communication band C to the RFIC 3.

[0051] A communication band means a frequency band predefined for a communication system by a standardization organization or the like (for example, 3GPP (3rd Generation Partnership Project), IEEE (Institute of Electrical and Electronics Engineers), etc.).

[0052] Here, a communication system means a communication system constructed using a radio access technology (RAT). As a communication system, for example, a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, a WLAN (Wireless Local Area Network) system, etc. can be used, but it is not limited thereto.

[0053] Communication band A is an example of the first communication band. Communication band B is an example of the second communication band. Communication band C is an example of the third communication band. Communication bands A to C are different communication bands. In the present embodiment, as communication bands A to C, communication bands for frequency division duplex (FDD) are used respectively. More specifically, as communication bands A to C, Band B1, Band B2, Band B3, or Band B7 for LTE, or Band n1, Band n2, Band n3, or Band n7 for 5GNR can be used respectively, but communication bands A to C are not limited to these.

[0054] Alternatively, as at least one of communication bands A to C, a communication band for time division duplex (TDD) can also be used. More specifically, as at least one of communication bands A to C, Band B32, Band B39, Band B40, or Band B41 for LTE, or Band n39, Band n40, or Band n41 for 5GNR can also be used.

[0055] The power amplifier 11 is capable of amplifying high-frequency signals in communication frequency bands A and B. The input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier 11 is connected to the transmit filters 61T and 62T via the switch 52.

[0056] The power amplifier 12 is capable of amplifying high-frequency signals in communication frequency band C. The input terminal of the power amplifier 12 is connected to the high-frequency input terminal 112, and the output terminal of the power amplifier 12 is connected to the transmit filter 63T.

[0057] The structures of the power amplifiers 11 and 12 are not particularly limited. For example, the power amplifiers 11 and / or 12 may be a single-stage structure or a multi-stage structure. For example, the power amplifiers 11 and / or 12 may also have a plurality of amplification elements connected in cascade. In addition, the power amplifiers 11 and / or 12 may also convert the high-frequency signal into a differential signal (i.e., complementary signal) and amplify it. Such power amplifiers 11 and / or 12 are sometimes referred to as differential amplifiers.

[0058] The low-noise amplifier 21 is capable of amplifying high-frequency signals in communication frequency bands A and B with low noise. The input terminal of the low-noise amplifier 21 is connected to the receive filters 61R and 62R via the switch 53, and the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121.

[0059] The low-noise amplifier 22 is capable of amplifying high-frequency signals in communication frequency band C with low noise. The input terminal of the low-noise amplifier 22 is connected to the receive filter 63R, and the output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122.

[0060] The structures of the low-noise amplifiers 21 and 22 are not particularly limited. For example, the low-noise amplifiers 21 and / or 22 may be either a single-stage structure or a multi-stage structure, or may also be a differential amplifier.

[0061] The duplexer 61 allows high-frequency signals in communication frequency band A to pass through. The duplexer 61 transmits the transmit signal and the receive signal in communication frequency band A in an FDD manner. The duplexer 61 includes a transmit filter 61T and a receive filter 61R.

[0062] The transmission filter 61T is an example of the first filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 11. Specifically, the other end of the transmission filter 61T is connected to the output terminal of the power amplifier 11 via the switch 52. The transmission filter 61T has a passband including at least a part of the communication band A. Specifically, the transmission filter 61T has a passband including the uplink operating band of the communication band A. Thus, the transmission filter 61T allows the high-frequency signals in the uplink operating band of the communication band A among the high-frequency signals amplified by the power amplifier 11 to pass through.

[0063] In addition, the uplink operating band means a part of the communication band designated for uplink use. In the high-frequency module 1, the uplink operating band means the transmission band.

[0064] The reception filter 61R is an example of the second filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the input terminal of the low-noise amplifier 21. Specifically, the other end of the reception filter 61R is connected to the input terminal of the low-noise amplifier 21 via the switch 53. The reception filter 61R has a passband including at least a part of the communication band A. Specifically, the reception filter 61R has a passband including the downlink operating band of the communication band A. Thus, the reception filter 61R allows the high-frequency signals in the downlink operating band of the communication band A among the high-frequency signals input from the antenna connection terminal 100 to pass through.

[0065] In addition, the downlink operating band means a part of the communication band designated for downlink use. In the high-frequency module 1, the downlink operating band means the reception band.

[0066] The duplexer 62 allows the high-frequency signals of the communication band B to pass through. The duplexer 62 transmits the transmission signal and the reception signal of the communication band B in the FDD mode. The duplexer 62 includes a transmission filter 62T and a reception filter 62R.

[0067] The transmission filter 62T is an example of the third filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 11. Specifically, the other end of the transmission filter 62T is connected to the output terminal of the power amplifier 11 via the switch 52. The transmission filter 62T has a passband including at least a part of the communication band B. Specifically, the transmission filter 62T has a passband including the uplink operating band of the communication band B. Thus, the transmission filter 62T allows the high-frequency signals in the uplink operating band of the communication band B among the high-frequency signals amplified by the power amplifier 11 to pass through.

[0068] The receiving filter 62R is an example of the third filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the input terminal of the low-noise amplifier 21. Specifically, the other end of the receiving filter 62R is connected to the input terminal of the low-noise amplifier 21 via the switch 53. The receiving filter 62R has a passband including at least a part of the communication band B. Specifically, the receiving filter 62R has a passband including the downlink operating band of the communication band B. Thus, the receiving filter 62R allows the high-frequency signals in the downlink operating band of the communication band B among the high-frequency signals input from the antenna connection terminal 100 to pass through.

[0069] The duplexer 63 allows the high-frequency signals of the communication band C to pass through. The duplexer 63 transmits the transmission signal and the reception signal of the communication band C in the FDD mode. The duplexer 63 includes a transmission filter 63T and a receiving filter 63R.

[0070] The transmission filter 63T is an example of the fourth filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 12. The transmission filter 63T has a passband including at least a part of the communication band C. Specifically, the transmission filter 63T has a passband including the uplink operating band of the communication band C. Thus, the transmission filter 63T allows the high-frequency signals in the uplink operating band of the communication band C among the high-frequency signals amplified by the power amplifier 12 to pass through.

[0071] The receiving filter 63R is an example of the fourth filter. One end thereof is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the input terminal of the low-noise amplifier 22. The receiving filter 63R has a passband including at least a part of the communication band C. Specifically, the receiving filter 63R has a passband including the downlink operating band of the communication band C. Thus, the receiving filter 63R allows the high-frequency signals in the downlink operating band of the communication band C among the high-frequency signals input from the antenna connection terminal 100 to pass through.

[0072] In addition, each of the above-described transmission filters 61T to 63T and receiving filters 61R to 63R may be, for example, any one of a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) elastic wave filter, an LC resonance filter, and a dielectric filter, and further, is not limited to these.

[0073] The switch 51 is an example of the first switch and is connected to the antenna connection terminal 100. Specifically, the switch 51 is connected between the antenna connection terminal 100 and the transmit filters 61T to 63T and the receive filters 61R to 63R. The switch 51 switches the connections between (1) the antenna connection terminal 100 and the transmit filter 61T and the receive filter 61R, (2) the antenna connection terminal 100 and the transmit filter 62T and the receive filter 62R, and (3) the antenna connection terminal 100 and the transmit filter 63T and the receive filter 63R. The switch 51 is composed of a multi-connection type switch circuit capable of simultaneously making two or more of the above connections (1) to (3).

[0074] Specifically, the switch 51 has terminals 511 to 514. The terminal 511 is a common terminal connected to the antenna connection terminal 100. The terminal 512 is a selection terminal connected to the transmit filter 61T and the receive filter 61R. The terminal 513 is a selection terminal connected to the transmit filter 62T and the receive filter 62R. The terminal 514 is a selection terminal connected to the transmit filter 63T and the receive filter 63R. The switch 51 can, for example, connect two or more of the terminals 512 to 514 to the terminal 511 based on a control signal from the RFIC 3.

[0075] The switch 52 is an example of the second switch and is connected to the output terminal of the power amplifier 11. Specifically, the switch 52 is connected between the output terminal of the power amplifier 11 and the transmit filters 61T and 62T. The switch 52 switches the connections between the power amplifier 11 and the transmit filter 61T and between the power amplifier 11 and the transmit filter 62T. Specifically, the switch 52 has terminals 521 to 523. The terminal 521 is a common terminal connected to the output terminal of the power amplifier 11. The terminal 522 is a selection terminal connected to the transmit filter 61T. The terminal 523 is a selection terminal connected to the transmit filter 62T. In such a connection structure, the switch 52 can, for example, connect either of the terminals 522 and 523 to the terminal 521 based on a control signal from the RFIC 3. Thereby, the connections between the power amplifier 11 and the transmit filter 61T and between the power amplifier 11 and the transmit filter 62T can be switched. The switch 52 is, for example, composed of an SPDT (Single-Pole Double-Throw) type switch circuit.

[0076] The switch 53 is connected between the input terminal of the low-noise amplifier 21 and the reception filters 61R and 62R. The switch 53 switches the connection between the low-noise amplifier 21 and the reception filter 61R, and the connection between the low-noise amplifier 21 and the reception filter 62R. Specifically, the switch 53 has terminals 531 to 533. The terminal 531 is a common terminal connected to the input terminal of the low-noise amplifier 21. The terminal 532 is a selection terminal connected to the reception filter 61R. The terminal 533 is a selection terminal connected to the reception filter 62R. In such a connection structure, the switch 53 can connect either one of the terminals 532 and 533 to the terminal 531 based on, for example, a control signal from the RFIC 3. Thereby, the connection between the low-noise amplifier 21 and the reception filter 61R, and the connection between the low-noise amplifier 21 and the reception filter 62R can be switched. The switch 53 is constituted by, for example, an SPDT type switch circuit.

[0077] In the present embodiment, the signal of the communication band C can be transmitted simultaneously with the signal of the communication band A. That is, one of the combinations of communication bands used in carrier aggregation (CA) is the communication band A and the communication band C. For example, the transmission signal of the communication band C can be transmitted simultaneously with the transmission signal of the communication band A. That is, the transmission signal (communication band A) passing through the transmission filter 61T and the transmission signal (communication band C) passing through the transmission filter 63T can be transmitted simultaneously. Further, for example, the reception signal of the communication band C can be transmitted simultaneously with the reception signal of the communication band A. That is, the reception signal (communication band A) passing through the reception filter 61R and the reception signal (communication band C) passing through the reception filter 63R can be transmitted simultaneously.

[0078] In addition, the signal of the communication band B cannot be transmitted simultaneously with the signal of the communication band A. That is, the communication band A and the communication band B are not included in one or more combinations of communication bands used in CA. One of the combinations not used in CA is the communication band A and the communication band B. As an example, the transmission signal of the communication band B cannot be transmitted simultaneously with the transmission signal of the communication band A. That is, the transmission signal (communication band A) passing through the transmission filter 61T and the transmission signal (communication band B) passing through the transmission filter 62T cannot be transmitted simultaneously. Further, the reception signal of the communication band B cannot be transmitted simultaneously with the reception signal of the communication band A. That is, the reception signal (communication band A) passing through the reception filter 61R and the reception signal (communication band B) passing through the reception filter 62R cannot be transmitted simultaneously.

[0079] As described above, an example has been given where the transmission signals of communication band A and communication band C can be transmitted simultaneously (sent simultaneously), and the transmission signals of communication band A and communication band B cannot be transmitted simultaneously (sent simultaneously), but it is not limited to this. For example, it may also be the case where the transmission signals of communication band B and communication band C can be transmitted simultaneously (sent simultaneously). Or, it may also be the case where the received signals of communication band A or B and the transmission signal of communication band C can be transmitted simultaneously (transmitted and received simultaneously). In addition, it may also be the case where the received signals of communication band A or B and the received signal of communication band C can be transmitted simultaneously (received simultaneously).

[0080] In addition, it may also be the case where the transmission signal or received signal of communication band A and the transmission signal or received signal of communication band B can be transmitted simultaneously. For example, when the transmission signals of communication band A and communication band B can be transmitted simultaneously, switch 52 is a multi-connection type switch in which terminal 521 can be connected to both terminals 522 and 523 simultaneously. In addition, when the received signals of communication band A and communication band B can be transmitted simultaneously, switch 53 is a multi-connection type switch in which terminal 531 can be connected to both terminals 532 and 533 simultaneously. In addition, it may also be the case where signals of three or more communication bands can be transmitted simultaneously.

[0081] In addition, the high-frequency module according to the present invention only needs to include at least one power amplifier, at least one low-noise amplifier, and at least one switch connected to the antenna connection terminal as a circuit structure, and other circuit elements may not be included.

[0082] [2. Component Configuration of High-Frequency Module]

[0083] Next, with reference to Figures 2 to 5 the component configuration of the high-frequency module 1 configured as above will be specifically described.

[0084] Figure 2 is a top view of the high-frequency module 1 according to Embodiment 1. Specifically, Figure 2 shows a view of the main surface 91a of the module substrate 91 observed from the positive side of the z-axis. Figures 3 to 5 are cross-sectional views of the high-frequency module 1 according to Embodiment 1, respectively. Figure 3 The cross-section of the high-frequency module 1 in Figure 2 is the cross-section at line III-III of Figure 4 The cross-section of the high-frequency module 1 in Figure 2 is the cross-section at line IV-IV of Figure 5 The cross-section of the high-frequency module 1 in Figure 2 is the cross-section at line V-V of

[0085] As inFigure 2 and Figure 3 As shown, in addition to the electronic components including the circuit elements shown in Figure 1 As shown, the high-frequency module 1 further includes a module substrate 91, a resin member 92, a conductive member 93, a shielding film 95, and a plurality of electrode terminals 150. In addition, in Figure 2 , the illustration of the upper portions of the resin member 92 and the shielding film 95 is omitted. Further, in order to make the shapes of the side wall portions of the conductive member 93 and the shielding film 95 easy to understand, a grid is attached to them for illustration.

[0086] The module substrate 91 has main surfaces 91a and 91b facing each other. In the present embodiment, the top view shape of the module substrate 91 is a rectangular shape, but it is not limited thereto. Components constituting the circuit of the high-frequency module 1 are arranged on the main surfaces 91a and 91b. As the module substrate 91, for example, a low-temperature co-fired ceramic (LTCC: Low Temperature Co-fired Ceramics) substrate having a stacked structure with a plurality of dielectric layers, a high-temperature co-fired ceramic (HTCC: High Temperature Co-fired Ceramics) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed substrate can be used, but it is not limited to these.

[0087] The main surface 91a of the module substrate 91 is an example of the first main surface and is sometimes referred to as the upper surface or the surface. As Figure 2 shown, a power amplifier 11 and 12, low-noise amplifiers 21 and 22, switches 51 to 53, a transmission filter 61T to 63T, and a reception filter 61R to 63R are arranged on the main surface 91a. That is, all of the circuit components (except for the external connection terminals) constituting the high-frequency module 1 are arranged on the main surface 91a. As Figure 3 shown, the components on the main surface 91a are sealed with the resin member 92.

[0088] The main surface 91b of the module substrate 91 is an example of the second main surface and is sometimes referred to as the lower surface or the back surface. As Figure 3 shown, a plurality of electrode terminals 150 are arranged on the main surface 91b.

[0089] The plurality of electrode terminals 150 are an example of a plurality of external connection terminals. Each of the plurality of electrode terminals 150, in addition to Figure 1In addition to the antenna connection terminal 100, high-frequency input terminals 111 and 112, and high-frequency output terminals 121 and 122 shown, a ground terminal is also included. Each of the plurality of electrode terminals 150 is connected to an input / output terminal and / or a ground electrode, etc., disposed on the mother substrate on the negative z-axis side of the high-frequency module 1. As the plurality of electrode terminals 150, pad electrodes can be used, but are not limited thereto.

[0090] The resin member 92 is disposed on the main surface 91a of the module substrate 91, covering the components disposed on the main surface 91a and the main surface 91a. The resin member 92 has a function of ensuring the reliability such as the mechanical strength and moisture resistance of each component.

[0091] The conductive member 93 divides the main surface 91a of the module substrate 91 into three regions R1 to R3. The sizes and shapes of the regions R1 to R3 are not particularly limited. An example of the arrangement of components in each of the regions R1 to R3 will be described later.

[0092] The conductive member 93 is set to the ground potential. For example, the conductive member 93 is connected to a ground conductor (not shown) in the module substrate 91 via a via conductor (not shown), thereby being set to the ground potential. In addition, the conductive member 93 is also set to the ground potential by being connected to the shielding film 95. The conductive member 93 protrudes from the main surface 91a. The conductive member 93 suppresses the electromagnetic coupling between the components disposed in the divided regions R1 to R3 respectively. Thereby, the inflow of noise into the high-frequency signals transmitted in each component can be suppressed.

[0093] As Figure 2 and Figure 3 shown, the conductive member 93 has a first partition wall 93a and a second partition wall 93b. The first partition wall 93a and the second partition wall 93b are each formed of a metal material.

[0094] The first partition wall 93a is a wall body that divides the region R1 and the region R2. As Figure 2 shown, the first partition wall 93a is a long flat plate extending linearly along the y-axis direction, and the side end faces at both ends in the y-axis direction are in contact with the shielding film 95. As Figure 3 shown, the first partition wall 93a is erected perpendicular to the main surface 91a, and the upper end face is in contact with the shielding film 95. Specifically, the entire upper end face and the side end faces of the first partition wall 93a are in contact with the shielding film 95, so that no gap is formed between the first partition wall 93a and the shielding film 95. Thereby, the region R1 can be completely separated from the regions R2 and R3.

[0095] The second partition wall 93b is a wall body that divides the region R2 and the region R3. As Figure 2As shown, the second partition wall 93b is a plate bent into an L shape extending along the y-axis direction and the x-axis direction respectively. The side end faces of the second partition wall 93b are each in contact with the shielding film 95. As Figure 3 shown, the second partition wall 93b is erected perpendicular to the main surface 91a, and the upper end face is in contact with the shielding film 95. Specifically, the entire upper end face and the side end faces of the second partition wall 93b are each in contact with the shielding film 95, so that no gap is formed between the second partition wall 93b and the shielding film 95. Thereby, the region R3 can be completely separated from the regions R1 and R2.

[0096] The first partition wall 93a and the second partition wall 93b are, for example, metal bodies formed by plating growth by a plating method. The first partition wall 93a and the second partition wall 93b can be formed, for example, by the following process.

[0097] First, in a given region on the main surface 91a of the module substrate 91, a concave portion is formed by a photosensitive resist or the like, thereby exposing the seed layer that becomes the base of the plating. Then, on the exposed seed layer, a metal such as gold or copper is grown by electrolytic plating, thereby forming the first partition wall 93a and the second partition wall 93b simultaneously.

[0098] The shielding film 95 is, for example, a metal thin film formed by a sputtering method, and is formed to cover the upper surface and the side surface of the resin member 92 and the side surface of the module substrate 91. The shielding film 95 is set to a ground potential to suppress external noise from invading the circuit components constituting the high-frequency module 1.

[0099] In the present embodiment, as Figure 2 shown, the main surface 91a of the module substrate 91 is divided into three regions R1 to R3 by the conductive member 93.

[0100] The region R1 is an example of the first region, and the power amplifiers 11 and 12 are arranged. In addition, a switch 52 connected to the output terminal of the power amplifier 11 is arranged in the region R1. The region R1 is a region surrounded by the first partition wall 93a of the conductive member 93 and the shielding film 95.

[0101] The region R2 is an example of the second region, and a switch 51 connected to the antenna connection terminal 100 is arranged. In addition, transmission filters 61T to 63T and reception filters 61R to 63R are arranged in the region R2. The region R2 is a region surrounded by the first partition wall 93a and the second partition wall 93b of the conductive member 93 and the shielding film 95.

[0102] When viewed from above the main surface 91a, the transmission filters 61T and 63T are arranged between the switch 51 and the power amplifier 11 within the region R2. For example, the transmission filters 61T and 63T are arranged along one side (the first side) of the switch 51 whose top view shape is rectangular. This first side is the side among the four sides of the switch 51 that is closest to the power amplifier 11.

[0103] As described above, the transmission filters 61T and 63T respectively correspond to combinations of communication frequency bands used in CA. Additionally, in Figure 2 , the filters having the communication frequency bands used in CA as passbands are indicated by the dashed boxes. In the present embodiment, the transmission filters 61T and 63T used in CA are arranged closer to the switch 51 than the transmission filter 62T not used in CA. Specifically, when viewed from above, both the shortest distance between the transmission filter 61T and the switch 51 and the shortest distance between the transmission filter 63T and the switch 51 are shorter than the shortest distance between the transmission filter 62T and the switch 51. Additionally, the "shortest distance between A and B" is the shortest distance among the distances connecting any point within A and any point within B.

[0104] The transmission filter 61T has a plurality of connection terminals connected to the main surface 91a. The plurality of connection terminals are in contact with, for example, wirings or electrode pads provided on the main surface 91a. As Figure 4 shown, the plurality of connection terminals include, as an example of the first terminal, an input terminal 61Ta which is one end of the transmission filter 61T. In addition, although not shown in Figure 4 , the plurality of connection terminals include output terminals and the like as an example of the second terminal.

[0105] The input terminal 61Ta is connected to the output terminal of the power amplifier 11 via the switch 52. A high-frequency signal amplified by the power amplifier 11 is input to the input terminal 61Ta. In the present embodiment, the input terminal 61Ta is adjacent to the first partition wall 93a. Additionally, in this specification, the statement that "terminal A is adjacent to B" means that there are no other terminals between "terminal A" and "B". Specifically, the distance between the first partition wall 93a and the input terminal 61Ta is shorter than the distance between the first partition wall 93a and the output terminal of the transmission filter 61T. The first partition wall 93a is the partition wall among the plurality of partition walls constituting the conductive member 93 that is closest to the transmission filter 61T.

[0106] More specifically, the distance between the first partition wall 93a and the input terminal 61Ta is the shortest among the distances between the first partition wall 93a and each of the plurality of connection terminals of the transmission filter 61T. For example, the input terminal 61Ta is located at the position closest to the first partition wall 93a among all the connection terminals of the transmission filter 61T. In addition, among all the connection terminals of the transmission filter 61T, connection terminals having the same distance from the first partition wall 93a as the input terminal 61Ta may also be included.

[0107] In this way, since the input terminal 61Ta of the transmission filter 61T is adjacent to the first partition wall 93a, heat generated in the transmission filter 61T can escape to the shielding film 95 and the ground conductor in the module substrate 91 via the first partition wall 93a, improving heat dissipation. In particular, when the transmission filter 61T is composed of a multi-stage SAW filter, a large amount of heat generated in the IDT electrode of the first stage can escape efficiently, so the heat dissipation effect is high.

[0108] In addition, as Figure 5 shown, the input terminal 62Ta of the transmission filter 62T is the same. Specifically, it is adjacent to the first partition wall 93a. Specifically, the distance between the first partition wall 93a and the input terminal 62Ta is shorter than the distance between the first partition wall 93a and the output terminal of the transmission filter 62T. The first partition wall 93a is the partition wall closest to the transmission filter 62T among the plurality of partition walls constituting the conductive member 93. More specifically, the distance between the first partition wall 93a and the input terminal 62Ta is the shortest among the distances between the first partition wall 93a and each of the plurality of connection terminals of the transmission filter 62T.

[0109] In addition, although not shown in the figure, the input terminal of the transmission filter 63T can also be adjacent to the first partition wall 93a in the same way. Thereby, even in the transmission filters 62T and 63T, the heat dissipation effect can be improved.

[0110] In the case of being surrounded by a plurality of partition walls (the first partition wall 93a and the second partition wall 93b) like the transmission filter 62T, the transmission filter 62T is arranged, for example, at a position biased from the center of the range surrounded by the plurality of partition walls toward the partition wall adjacent to the input terminal 62Ta. Thereby, since the input terminal 62Ta is adjacent to one of the plurality of partition walls, the heat dissipation effect can be improved.

[0111] In the present embodiment, as Figure 4As shown, the transmission filter 61T can also be in contact with the shielding film 95. Specifically, the top surface of the transmission filter 61T is exposed without being covered by the resin member 92, and the shielding film 95 contacts and covers the exposed top surface. Thus, the heat generated in the transmission filter 61T can be directly transferred to the shielding film 95, so that the heat dissipation effect can be further improved. In addition, the so-called top surface of a component is the surface on the side opposite to the main surface side of the module substrate 91, and in each figure, it is the surface on the positive side of the z-axis.

[0112] In addition, regarding the transmission filters 62T and 63T, similarly, the top surfaces thereof can be in contact with the shielding film 95. Thus, the heat dissipation effects of the transmission filters 62T and 63T can be improved.

[0113] When viewed from above the main surface 91a, the reception filters 61R and 63R are arranged between the switch 51 and the low-noise amplifier 21 within the region R2. For example, the reception filters 61R and 63R are arranged along the other side (the second side) of the switch 51 whose top-view shape is rectangular. This second side is the side among the four sides of the switch 51 that is closest to the low-noise amplifier 21.

[0114] As described above, the reception filters 61R and 63R respectively correspond to the combinations of communication frequency bands used in CA. In the present embodiment, the reception filters 61R and 63R used in CA are arranged at positions closer to the switch 51 than the reception filter 62R not used in CA. Specifically, when viewed from above, the shortest distances between the reception filter 61R and the switch 51, and between the reception filter 63R and the switch 51 are both shorter than the shortest distance between the reception filter 62R and the switch 51.

[0115] As Figure 2 shown, the transmission filter 62T not used in CA may not be arranged between the power amplifier 11 and the switch 51. The reception filter 62R not used in CA may not be arranged between the low-noise amplifier 21 and the switch 51.

[0116] The region R3 is an example of the third region, and the low-noise amplifiers 21 and 22 are arranged therein. In addition, a switch 53 connected to the input terminal of the low-noise amplifier 21 is arranged in the region R3. The region R3 is a region surrounded by the second partition wall 93b of the conductive member 93 and the shielding film 95.

[0117] In the present embodiment, as Figure 2As shown, the low-noise amplifiers 21 and 22 and the switch 53 are included in an electronic component 20. The electronic component 20 is, for example, a semiconductor integrated circuit. The semiconductor integrated circuit is constituted by, for example, CMOS (Complementary Metal Oxide Semiconductor), and specifically, can be constituted by an SOI (Silicon on Insulator) process. Thereby, the semiconductor integrated circuit can be manufactured at low cost. In addition, the semiconductor integrated circuit may be constituted by at least one of GaAs, SiGe, and GaN. Thereby, a low-noise amplifier having high-quality amplification performance and noise performance can be realized.

[0118] In addition, as Figure 2 shown, the main surface 91a can be hypothetically divided into four regions (quadrants) of equal size by two hypothetical straight lines VL1 and VL2. The straight lines VL1 and VL2 are lines parallel to two sides of the main surface 91a whose top view shape is rectangular. In addition, the intersection point of the straight lines VL1 and VL2 coincides with the center of the main surface 91a.

[0119] The four hypothetically divided regions (quadrants) are set as the 1st quadrant to the 4th quadrant in the order of upper right, upper left, lower left, and lower right. The 1st quadrant to the 4th quadrant are all regions of equal size. In Figure 2 the example shown, the switch 51 is arranged in the 1st quadrant. The power amplifier 11 and the switch 52 are arranged in the 2nd quadrant. The power amplifier 12 is arranged in the 3rd quadrant. The low-noise amplifiers 21 and 22 and the switch 53 are arranged in the 4th quadrant.

[0120] In addition, the transmit filters 61T to 63T and the receive filter 62R are arranged on the hypothetical straight line VL2. The receive filters 61R and 63R are arranged on the hypothetical straight line VL1. At this time, the transmit filter 62T and the receive filter 62R not used for CA are arranged in the lower half region (specifically, the region constituted by the 3rd quadrant and the 4th quadrant) that is the same as the low-noise amplifiers 21 and 22. The transmit filters 61T and 63T used for CA are arranged in the upper half region (specifically, the region constituted by the 1st quadrant and the 2nd quadrant) that is the same as the switch 51.

[0121] In addition, Figure 2The configuration example shown is merely an example, and the configurations of the respective components can also be changed appropriately. For example, the power amplifier 12 can also be arranged in the second quadrant same as the power amplifier 11. In addition, at least one of the transmission filters 61T to 63T and the reception filters 61R to 63R can be arranged not on the straight lines VL1 and VL2 but in any one of the first quadrant to the fourth quadrant.

[0122] [3. Effects, etc.]

[0123] As described above, the high-frequency module 1 according to the present embodiment includes: a module substrate 91 having a main surface 91a; a conductive member 93 that divides the main surface 91a into a region R1, a region R2, and a region R3 in a plan view of the main surface 91a and is set to a ground potential; a switch 51 arranged in the region R2 and connected to the antenna connection terminal 100; a power amplifier 11 arranged in the region R1 and connected to the antenna connection terminal 100 via the switch 51; and a low-noise amplifier 21 arranged in the region R3 and connected to the antenna connection terminal 100 via the switch 51.

[0124] Thereby, the power amplifier 11, the low-noise amplifier 21, and the switch 51 (antenna switch) are respectively arranged in different regions, and electromagnetic coupling between them can be suppressed by the conductive member 93. Therefore, inflow of noise into the high-frequency signals processed by the respective elements can be suppressed.

[0125] In addition, for example, the high-frequency module 1 further includes: a transmission filter 61T having a passband including at least a part of the communication band A, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end of which is connected to the output terminal of the power amplifier 11. In a plan view, the transmission filter 61T is arranged between the switch 51 and the power amplifier 11 within the region R2.

[0126] Thereby, the wiring length from the power amplifier 11 to the switch 51 via the transmission filter 61T can be shortened. In addition, by arranging the switch 51 and the transmission filter 61T in the same region R2, the wiring length between the switch 51 and the transmission filter 61T can be further shortened. For example, when the transmission filter 61T and the reception filter 61R together form a duplexer 61, both the transmission signal and the reception signal are transmitted between the switch 51 and the transmission filter 61T. Therefore, the wiring length between the elements for transmitting both the transmission signal and the reception signal can be shortened, so that the influence of parasitic capacitance, etc. of these wirings can be suppressed, and deterioration of loss characteristics can be suppressed. In addition, electric field coupling, magnetic field coupling, or electromagnetic field coupling between these wirings and circuit components or other wirings, etc. can be suppressed, and thus deterioration of the isolation characteristic between transmission and reception can be suppressed. As such, according to the high-frequency module 1 of the present embodiment, inflow of noise into the high-frequency signals can be suppressed, and electrical characteristics can be improved.

[0127] In addition, for example, the transmission filter 61T has a plurality of connection terminals connected to the main surface 91a. The plurality of connection terminals include an input terminal 61Ta and other terminals. In a plan view, the distance between the conductive member 93 and the input terminal 61Ta is shorter than the distance between the conductive member 93 and the other terminals. In addition, for example, in a plan view, the distance between the conductive member 93 and the input terminal 61Ta may also be the shortest among the distances between the conductive member 93 and each of the plurality of connection terminals of the transmission filter 61T.

[0128] In this way, since the input terminal 61Ta of the transmission filter 61T is adjacent to the conductive member 93, heat generated in the transmission filter 61T can escape to the shielding film 95 and the ground conductor in the module substrate 91 via the conductive member 93, and heat dissipation can be improved.

[0129] In addition, for example, the high-frequency module 1 further includes: a reception filter 61R having a passband including at least a part of the communication band A, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end of which is connected to the input terminal of the low-noise amplifier 21. In a plan view, the reception filter 61R is disposed between the switch 51 and the low-noise amplifier 21 within the region R2.

[0130] Thereby, the wiring length from the switch 51 via the reception filter 61R to the low-noise amplifier 21 can be shortened. In addition, by disposing the switch 51 and the reception filter 61R in the same region R2, the distance between the switch 51 and the reception filter 61R can be further shortened. Thereby, the influence of parasitic capacitance and parasitic inductance generated in the wiring can be suppressed, and thus the inflow of noise into the high-frequency signal can be suppressed, and the electrical characteristics of the high-frequency module 1 can be improved.

[0131] In addition, for example, the high-frequency module 1 further includes: a transmission filter 62T or a reception filter 62R having a passband including at least a part of a communication band B different from the communication band A, one end of which is connected to the antenna connection terminal 100 via the switch 51; and a transmission filter 63T or a reception filter 63R having a passband including at least a part of a communication band C different from the communication bands A and B, one end of which is connected to the antenna connection terminal 100 via the switch 51. Signals in the communication band B cannot be transmitted simultaneously with signals in the communication band A. Signals in the communication band C can be transmitted simultaneously with signals in the communication band A. In a plan view, the transmission filter 63T (or the reception filter 63R) is disposed within the region R2 at a position where the distance between the transmission filter 63T (or the reception filter 63R) and the switch 51 is shorter than the distance between the transmission filter 62T (or the reception filter 62R) and the switch 51.

[0132] Thus, the filters used for CA (e.g., the transmission filters 61T and 63T and the reception filters 61R and 63R) are arranged closer to the switch 51 than the filters not used for CA (e.g., the transmission filter 62T and the reception filter 62R), so that the wiring length between the filters used for CA and the switch 51 can be shortened. Therefore, the inflow of noise into the high-frequency signal of the communication frequency band used for CA can be suppressed.

[0133] In addition, for example, the high frequency module 1 further includes a switch 52 connected to the output terminal of the power amplifier 11. The transmission filter 62T is connected to the output terminal of the power amplifier 11 via the switch 52. The switch 52 is arranged in the region R1.

[0134] Thus, the switch 52 and the power amplifiers 11 and 12 for transmitting signals are arranged in the same region R1 and separated from the region R3 where the low noise amplifiers 21 and 22 are arranged. Therefore, the isolation characteristics between transmission and reception can be improved, and the influx of noise into high frequency signals can be suppressed.

[0135] For example, when the main surface 91a is virtually divided into two regions of equal size by a straight line VL1, the power amplifier 11, the switch 51 and the transmission filter 63T are arranged in one of the two regions, and the low noise amplifier 21 and the transmission filter 62T are arranged in the other of the two regions.

[0136] This can shorten the wiring length between the filter used for CA and the switch 51. Therefore, it is possible to suppress the influx of noise into the high-frequency signal in the communication frequency band used for CA.

[0137] In addition, for example, when the main surface 91a is virtually divided into four regions of equal size by two straight lines VL1 and VL2, the power amplifier 11 and the switch 51 are respectively arranged in two adjacent regions, and the low-noise amplifier 21 is arranged in a region located at the diagonal position of the region where the power amplifier 11 is arranged.

[0138] As a result, the power amplifier 11 and the low-noise amplifier 21 can be separated relatively far from each other, so that the isolation characteristics between transmission and reception can be improved, and the influx of noise into high-frequency signals can be suppressed.

[0139] For example, the high frequency module 1 further includes a resin member 92 covering the power amplifier 11, the low noise amplifier 21, the switch 51, and the main surface 91a, and a shielding film 95 covering the surface of the resin member 92. The conductive member 93 is in contact with the shielding film 95.

[0140] This can improve the shielding performance between the regions by the conductive member 93 , thereby suppressing the inflow of noise.

[0141] In addition, the communication device 5 according to the present embodiment includes: an RFIC 3 that processes high-frequency signals; and a high-frequency module 1 that transmits the high-frequency signals processed by the RFIC 3.

[0142] As a result, the same effects as those of the above-described high-frequency module 1 can be obtained.

[0143] (Others)

[0144] As described above, the high-frequency module and the communication device according to the present invention have been described based on the above-described embodiments, but the present invention is not limited to the above-described embodiments.

[0145] For example, in the circuit structures of the high-frequency module and the communication device according to the above-described embodiments, other circuit elements and wirings may be inserted between the paths connecting the respective circuit elements and signal paths disclosed in the attached drawings. For example, an impedance matching circuit may be inserted into at least one of the paths between the duplexer 61 and the switch 51, between the duplexer 62 and the switch 51, and between the duplexer 63 and the switch 51. In addition, an impedance matching circuit may be inserted into at least one of the paths between the power amplifier 11 and the switch 52, between the low-noise amplifier 21 and the switch 53, between the power amplifier 12 and the transmit filter 63T, and between the low-noise amplifier 22 and the receive filter 63R. The impedance matching circuit can include, for example, an inductor and / or a capacitor.

[0146] In addition, for example, the high-frequency module 1 may include a plurality of antenna connection terminals, and the communication device 5 may include a plurality of antennas.

[0147] In addition, for example, at least one of the transmit filters 61T to 63T and the receive filters 61R to 63R may be arranged in a region different from the region R2 where the switch 51 is arranged. For example, at least one of the transmit filters 61T to 63T may be arranged in the region R1 where the power amplifier 11 is arranged. At least one of the receive filters 61R to 63R may be arranged in the region R3 where the low-noise amplifier 21 is arranged.

[0148] In addition, for example, in the above-described embodiment, an example in which the main surface 91a of the module substrate 91 is divided into three regions is shown, but it is not limited thereto. For example, the main surface 91a may be divided into four or more regions. For example, at least one of the switches 52 and 53, the transmit filters 61T to 63T, and the receive filters 61R to 63R may be arranged in a region different from all of the regions R1 to R3.

[0149] In addition, for example, the shapes and sizes of the first partition wall 93a and the second partition wall 93b are not particularly limited. For example, the first partition wall 93a may extend in a direction inclined with respect to the y-axis direction or in a perpendicular direction, or may meander along the y-axis direction. In addition, the first partition wall 93a may also be L-shaped in plan view, similar to the second partition wall 93b. The second partition wall 93b may extend linearly along the y-axis direction, or may also extend in a direction inclined with respect to the y-axis direction or in a perpendicular direction. In addition, the first partition wall 93a may be an annular wall body that at least surrounds the periphery of the power amplifier 11. The second partition wall 93b may also be an annular wall body that at least surrounds the periphery of the low-noise amplifier 21.

[0150] In addition, the first partition wall 93a and the second partition wall 93b may not be in contact with the shielding film 95, respectively. In addition, one or more through-holes or one or more slits penetrating the wall body may be provided in each of the first partition wall 93a and the second partition wall 93b. The shape of the slit may be, for example, a shape of a groove cut from the upper end of the wall body downward, or a shape of a groove cut from the lower end of the wall body upward. Alternatively, the shape of the slit may also have a shape of a groove cut from the side end face (the contact surface with the shielding film 95) of the wall body in a direction parallel to the main surface 91a or in a direction inclined with respect to the main surface 91a.

[0151] In addition, the first partition wall 93a and the second partition wall 93b may each be composed of a plurality of partial wall bodies separated from each other. Hereinafter, Figures 6 to 11 modification examples of the first partition wall 93a and the second partition wall 93b will be described. Figures 6 to 11 are respectively plan views of high-frequency modules according to Modification Examples 1 to 6. Except for the plan shapes of the first partition wall 93a and the second partition wall 93b, they are the same as those in the above-described embodiment.

[0152] For example, like Figure 6 the high-frequency module 1A shown, the first partition wall 93a and the second partition wall 93b may each be composed of a plurality of partial wall bodies arranged separately from each other. The plan shapes of the first partition wall 93a and the second partition wall 93b may also be dotted line or dashed line shapes with a given line width.

[0153] In addition, when the partition wall is composed of a plurality of partial wall bodies, or when the partition wall does not extend to the side portion of the shielding film 95, each region can be hypothetically partitioned by a hypothetical straight line extending from the end of the partition wall or the partial wall body in a given direction. As an example, the hypothetical straight line is an extension line of the partition wall or the partial wall body.

[0154] In Figure 6In the high-frequency module 1A shown, the first partition wall 93a includes two partial wall bodies 193a and 193b. The two partial wall bodies 193a and 193b have a long strip shape extending in the y-axis direction, are arranged linearly along the y-axis direction, and the partial wall bodies 193a and 193b do not contact the side portions of the shielding film 95 respectively, and gaps are provided.

[0155] The second partition wall 93b includes two partial wall bodies 193c and 193d. The partial wall body 193c has a long strip shape extending along the y-axis direction. The partial wall body 193d has a long strip shape extending along the x-axis direction. The partial wall bodies 193c and 193d are separately arranged without contacting each other. In addition, the partial wall bodies 193c and 193d do not contact the side portions of the shielding film 95 respectively, and gaps are provided.

[0156] Even in such a case, similar to the embodiment, the partitioning of regions R1 to R3 can be performed. Regions R1 to R3 may not be completely separated from each other, or a part may be connected through the gaps of the partition walls.

[0157] In addition, as Figure 7 shown in the high-frequency module 1B, the first partition wall 93a may not have the partial wall body 193b and only have the partial wall body 193a. The high-frequency module 1B is equivalent to the structure of the high-frequency module 1A Figure 6 from which the partial wall body 193b is removed. In this case, the regions R1 and R2 can be partitioned by the extension line of the partial wall body 193a (extending in the v-axis direction).

[0158] In addition, as Figure 8 shown in the high-frequency module 1C, the second partition wall 93b may not have the partial wall body 193d and only have the partial wall body 193c. The high-frequency module 1C is equivalent to the structure of the high-frequency module 1A Figure 6 from which the partial wall body 193d is removed. In this case, the regions R2 and R3 can be partitioned by the extension line of the partial wall body 193c and an imaginary line extending from the end portion of the partial wall body 193c in the y-axis direction to the x-axis direction.

[0159] In addition, as Figure 9 shown in the high-frequency module 1D, the first partition wall 93a may not have the partial wall body 193b and only have the partial wall body 193a. The second partition wall 93b may not have the partial wall body 193d and only have the partial wall body 193c. The high-frequency module 1D is equivalent to the structure of the high-frequency module 1A Figure 6 from which the partial wall bodies 193b and 193d are removed.

[0160] In addition, as Figure 10Like the high-frequency module 1E shown, the second partition wall 93b may also have only the partial wall body 193d without the partial wall body 193c. The high-frequency module 1E is equivalent to the structure obtained by removing the partial wall body 193c from the Figure 6 high-frequency module 1A.

[0161] In addition, like the Figure 11 high-frequency module 1F shown, the first partition wall 93a may also have only the partial wall body 193a without the partial wall body 193b. The second partition wall 93b may also have only the partial wall body 193d without the partial wall body 193c. The high-frequency module 1F is equivalent to the structure obtained by removing the partial wall bodies 193b and 193c from the Figure 6 high-frequency module 1A.

[0162] Even in these cases, similar to the cases of Figure 7 and Figure 8 , the partitioning of the regions R1 to R3 can be performed. In addition, in Modification 2, Modification 4, or Modification 6, the partial wall body 193b may be provided instead of the partial wall body 193a.

[0163] In addition, the first partition wall 93a and the second partition wall 93b can be formed by applying a metal paste and curing the applied metal paste, respectively. In addition, the first partition wall 93a and the second partition wall 93b can also be formed by filling a gap equivalent to a partition wall in the resin member 92 with metal by sputtering, respectively. Alternatively, the first partition wall 93a and the second partition wall 93b can also be formed by fixing a plate-like member made of metal to the main surface 91a with solder, respectively.

[0164] In addition, for example, in the above-described embodiment, an example in which all the components constituting the circuit of the high-frequency module 1 are mounted on the main surface 91a of the module substrate 91, that is, an example of single-sided mounting on the module substrate 91 is shown, but it is not limited thereto. For example, components may be mounted on both sides of the module substrate 91. For example, one of the switches 52 and 53 may be mounted on the main surface 91b of the module substrate 91. When a component is mounted on the main surface 91b, a resin member covering the component may be provided. In this case, the electrode terminal 150 may also be a columnar electrode penetrating the resin member. Alternatively, the electrode terminal 150 may also be a bump electrode. When the high-frequency module 1 includes an impedance matching circuit, the impedance matching circuit may be disposed on the main surface 91a or on the main surface 91b.

[0165] In addition, in the case of single-sided mounting of the module substrate 91, the main surface used for single-sided mounting may also be the main surface 91b of the module substrate 91. That is to say, it may also be that the main surface 91b is divided into three or more regions by the conductive member 93, and the power amplifier 11, the switch 51, and the low-noise amplifier 21 are respectively arranged in each region.

[0166] In addition, the modes obtained by making various modifications conceived by those skilled in the art to each embodiment, and the modes realized by arbitrarily combining the constituent elements and functions in each embodiment within the scope not departing from the gist of the present invention are also included in the present invention.

[0167] Industrial Applicability

[0168] As a high-frequency module arranged at the front end, the present invention can be used in communication devices such as mobile phones.

[0169] Explanation of Reference Numerals

[0170] 1, 1A, 1B, 1C, 1D, 1E, 1F: High-frequency module;

[0171] 2: Antenna;

[0172] 3: RFIC;

[0173] 4: BBIC;

[0174] 5: Communication device;

[0175] 11, 12: Power amplifier;

[0176] 20: Electronic component;

[0177] 21, 22: Low-noise amplifier;

[0178] 51, 52, 53: Switch;

[0179] 61, 62, 63: Duplexer;

[0180] 61T, 62T, 63T: Transmit filter;

[0181] 61Ta, 62Ta: Input terminal;

[0182] 61R, 62R, 63R: Receive filter;

[0183] 91: Module substrate;

[0184] 91a, 91b: Main surface;

[0185] 92: Resin member;

[0186] 93: Conductive member;

[0187] 93a: First partition wall;

[0188] 93b: Second partition wall;

[0189] 95: Shielding film;

[0190] 100: Antenna connection terminal;

[0191] 111, 112: High-frequency input terminals;

[0192] 121, 122: High-frequency output terminals;

[0193] 150: Electrode terminal;

[0194] 193a, 193b, 193c, 193d: Partial wall bodies;

[0195] 511, 512, 513, 514, 521, 522, 523, 531, 532, 533: Terminals;

[0196] R1, R2, R3: Regions;

[0197] VL1, VL2: Straight lines.

Claims

1. A high-frequency module, comprising: A module substrate having a main surface; A conductive member that divides the main surface into a first region, a second region, and a third region when viewed from above the main surface and is set to a ground potential; A first switch disposed in the second region and connected to an antenna connection terminal; A power amplifier disposed in the first region and connected to the antenna connection terminal via the first switch; A low-noise amplifier disposed in the third region and connected to the antenna connection terminal via the first switch; And A resin member that covers at least a part of the main surface and at least a part of the conductive member, A through-hole or a slit that penetrates a wall body of the conductive member itself is provided in the conductive member.

2. The high-frequency module according to claim 1, wherein: It further comprises: a first filter having a passband including at least a part of a first communication band, one end of which is connected to the antenna connection terminal via the first switch, and the other end of which is connected to an output terminal of the power amplifier, When viewed from above, the first filter is disposed between the first switch and the power amplifier within the second region.

3. The high-frequency module according to claim 2, wherein: The first filter has a plurality of connection terminals connected to the main surface, The plurality of connection terminals include a first terminal and a second terminal as the other end, When viewed from above, the distance between the conductive member and the first terminal is shorter than the distance between the conductive member and the second terminal.

4. The high-frequency module according to claim 3, wherein: When viewed from above, the distance between the conductive member and the first terminal is the shortest among the distances between the conductive member and the plurality of connection terminals.

5. The high-frequency module according to any one of claims 1 to 4, wherein: It further comprises: a second filter having a passband including at least a part of a first communication band, one end of which is connected to the antenna connection terminal via the first switch, and the other end of which is connected to an input terminal of the low-noise amplifier, When viewed from above, the second filter is disposed between the first switch and the low-noise amplifier within the second region.

6. The high-frequency module according to any one of claims 2 to 4, wherein: It further comprises: A third filter having a passband including at least a part of a second communication band different from the first communication band, one end of which is connected to the antenna connection terminal via the first switch; And A fourth filter having a passband including at least a part of a third communication band different from the first communication band and the second communication band, one end of which is connected to the antenna connection terminal via the first switch, Signals of the second communication band cannot be transmitted simultaneously with signals of the first communication band, Signals of the third communication band can be transmitted simultaneously with signals of the first communication band, When viewed from above, the fourth filter is disposed at a position within the second region where the distance between the fourth filter and the first switch is shorter than the distance between the third filter and the first switch.

7. The high-frequency module according to claim 6, wherein: The device further comprises: a second switch connected to the output terminal of the power amplifier; At least one of the third filter and the fourth filter is connected to an output terminal of the power amplifier via the second switch. The second switch is arranged in the first area.

8. The high frequency module according to claim 6, wherein: When the main surface is virtually divided into two regions of equal size by a straight line, The power amplifier, the first switch, and the fourth filter are arranged in one of the two regions. The low noise amplifier and the third filter are arranged in the other of the two regions.

9. The high frequency module according to any one of claims 1 to 4, wherein: The device further comprises: a second switch connected to the output terminal of the power amplifier; The second switch is arranged in the first area.

10. The high frequency module according to any one of claims 1 to 4, wherein: When the main surface is virtually divided into four regions of equal size by two straight lines, The power amplifier and the first switch are respectively arranged in two adjacent regions. The low noise amplifier is arranged in a region located diagonally to a region where the power amplifier is arranged.

11. The high frequency module according to any one of claims 1 to 4, wherein: The resin member also covers the power amplifier, the low noise amplifier and the first switch. The high frequency module further comprises: a shielding film covering the surface of the resin member; The conductive member is in contact with the shielding film.

12. A communication device comprising: A signal processing circuit for processing high frequency signals; and The high-frequency module according to any one of claims 1 to 11 transmits the high-frequency signal processed by the signal processing circuit.

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