Perovskite solar cell module and method of manufacturing the same

Abstract

The application discloses a perovskite solar cell assembly and a preparation method thereof, which comprises a transparent electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, a barrier layer and a metal electrode layer which are sequentially and laminatedly arranged on a transparent glass substrate, wherein a first groove is arranged through the transparent electrode layer, and the first groove is filled with the electron transport layer; a second groove is arranged through the hole transport layer, the perovskite layer and the electron transport layer, and the second groove is filled with the barrier layer; a third groove is arranged through the barrier layer, the hole transport layer, the perovskite layer and the electron transport layer, and the third groove is filled with the metal electrode layer; a fourth groove is arranged through the metal electrode layer, the barrier layer, the hole transport layer, the perovskite layer and the electron transport layer, and the fourth groove is filled with the barrier layer; there is a space between the first groove and the second groove; and there is no space between the second groove, the third groove and the fourth groove. The application has important significance for the commercial development of large-area perovskite cells.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to a perovskite solar cell module and its preparation method. Background Technology

[0002] The global energy sector faces challenges such as finite reserves of oil and natural gas, environmental problems caused by fossil fuels, and global warming. Many countries are searching for alternative energy sources, such as solar, wind, hydro, and biomass energy.

[0003] Solar energy is a renewable energy source that can be converted into electricity using solar cells. Solar power is relatively inexpensive, and the costs of installing and using solar cells are constantly decreasing. Solar power also does not emit greenhouse gases, making it environmentally friendly. Furthermore, solar power boasts high reliability and a long lifespan. The power conversion efficiency of organic-inorganic hybrid perovskite solar cells has increased from 3.8% to 25.7% over the past decade, comparable to monocrystalline silicon solar cells. The success of hybrid perovskite materials stems from many excellent properties, such as high defect tolerance, high bipolar charge transport, excellent carrier mobility, and low exciton binding energy. Currently, research on large-area perovskite solar modules is booming, with broad commercial prospects. This is of great significance for addressing the global energy crisis and provides humanity with more renewable energy options.

[0004] However, the interdiffusion of halides between the metal electrodes and the perovskite light-absorbing layer in large-area perovskite solar modules can cause irreversible degradation, leading to device instability and hindering commercialization prospects. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, this invention provides a perovskite solar cell module and its fabrication method. The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] In a first aspect, embodiments of the present invention provide a perovskite solar cell module, comprising a transparent electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, a blocking layer, and a metal electrode layer sequentially stacked on a transparent glass substrate. The metal electrode layer is further disposed on the upper surface of one side of the transparent electrode layer. The blocking layer is any one of an oxide, a two-dimensional material, and a polymer.

[0007] A plurality of first grooves are provided through the transparent electrode layer, and each first groove is filled with the electron transport layer;

[0008] A plurality of second grooves are provided through the hole transport layer, the perovskite layer, and the electron transport layer, and each second groove is filled with the barrier layer;

[0009] A plurality of third grooves are provided through the barrier layer, the hole transport layer, the perovskite layer, and the electron transport layer, and each of the third grooves is filled with the metal electrode layer;

[0010] A plurality of fourth grooves are provided through the metal electrode layer, the barrier layer, the hole transport layer, the perovskite layer, and the electron transport layer, and each fourth groove is filled with the barrier layer;

[0011] There is a gap between the first groove and the second groove; there is no gap between the second groove, the third groove and the fourth groove.

[0012] In one embodiment of the present invention, the transparent electrode layer is any one of ITO and FTO; the electron transport layer is an N-type semiconductor material; the perovskite layer has the general formula ABX3, with a band gap between 1.2 eV and 2.2 eV, where A is a cation selected from one or more of MA, FA, Rb, and Cs, B is a cation selected from one or more of Pb and Sn, and C is an anion selected from one or more of Cl, Br, and I; the hole transport layer is a P-type semiconductor material; the blocking layer is any one of oxides, two-dimensional materials, and polymers; and the metal electrode layer is any one of Ag, Au, and Cu.

[0013] In one embodiment of the present invention, the thickness of the transparent glass substrate is 1 mm to 2 mm; the thickness of the transparent electrode layer is 100 nm to 200 nm; the thickness of the electron transport layer is 80 nm to 100 nm; the thickness of the perovskite layer is 500 nm to 1000 nm; the thickness of the hole transport layer is 80 nm to 100 nm; the thickness of the blocking layer is 10 nm to 20 nm; and the thickness of the metal electrode layer is 80 nm to 100 nm.

[0014] In one embodiment of the present invention, the first groove, the second groove, the third groove, and the fourth groove have the same width.

[0015] In one embodiment of the present invention, the widths of the first groove, the second groove, the third groove, and the fourth groove are all 50μm to 300μm.

[0016] In one embodiment of the present invention, the interval between the first groove and the second groove is 50 μm to 200 μm.

[0017] Secondly, embodiments of the present invention provide a method for preparing a perovskite solar cell module, comprising:

[0018] A transparent electrode layer is grown on a transparent glass substrate;

[0019] A plurality of first grooves penetrating the transparent electrode layer are etched on the transparent electrode layer;

[0020] An electron transport layer is grown on the transparent electrode layer and within each of the first grooves;

[0021] A perovskite layer is grown on the electron transport layer;

[0022] A hole transport layer is grown on the perovskite layer;

[0023] A plurality of second grooves are etched on the hole transport layer, penetrating the hole transport layer, the perovskite layer, and the electron transport layer; wherein, there is a gap between the second grooves and the first grooves;

[0024] A barrier layer is grown on the hole transport layer and within each of the second grooves;

[0025] A plurality of third grooves are etched on the barrier layer, penetrating the barrier layer, the hole transport layer, the perovskite layer, and the electron transport layer; wherein there is no gap between the third grooves and the second grooves;

[0026] Metal electrode layers are grown on the barrier layer, on the transparent electrode layer, and within each of the third grooves;

[0027] A plurality of fourth grooves are etched on the barrier layer, penetrating the barrier layer, the metal electrode layer, the hole transport layer, the perovskite layer, and the electron transport layer; wherein there is no gap between the fourth grooves and the third grooves;

[0028] The barrier layer is grown within the fourth groove.

[0029] In one embodiment of the present invention, an electron transport layer is grown using spin coating or immersion coating; a perovskite layer is grown using blade coating, wire rod coating, or slot coating; a hole transport layer is grown using spin coating or blade coating; an oxide barrier layer is grown using physical vapor deposition (PVD) or atomic layer deposition (ALD); a two-dimensional material barrier layer is grown using chemical vapor deposition (CVD); a polymer barrier layer is grown using CVD, vacuum thermal evaporation, spin coating, blade coating, wire rod coating, or slot coating; and a metal electrode layer is grown using electron evaporation.

[0030] In one embodiment of the present invention, the transparent electrode layer is any one of ITO and FTO; the electron transport layer is an N-type semiconductor material; the perovskite layer has the general formula ABX3, with a band gap between 1.2 eV and 2.2 eV, where A is a cation selected from one or more of MA, FA, Rb, and Cs, B is a cation selected from one or more of Pb and Sn, and C is an anion selected from one or more of Cl, Br, and I; the hole transport layer is a P-type semiconductor material; and the metal electrode layer is any one of Ag, Au, and Cu.

[0031] In one embodiment of the present invention, the first groove, the second groove, the third groove, and the fourth groove have the same width.

[0032] The beneficial effects of this invention are:

[0033] The perovskite solar cell module proposed in this invention includes a transparent electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, a blocking layer, and a metal electrode layer sequentially stacked on a transparent glass substrate. A metal electrode layer is disposed on the upper surface of one side of the transparent electrode layer. A plurality of first grooves are disposed through the transparent electrode layer, each filled with an electron transport layer; a plurality of second grooves are disposed through the hole transport layer, the perovskite layer, and the electron transport layer, each filled with a blocking layer; a plurality of third grooves are disposed through the blocking layer, the hole transport layer, the perovskite layer, and the electron transport layer, each filled with a metal electrode layer; and a plurality of fourth grooves are disposed through the metal electrode layer, the blocking layer, the hole transport layer, the perovskite layer, and the electron transport layer, each filled with a blocking layer. There is a gap between the first and second grooves; there is no gap between the second, third, and fourth grooves. As can be seen, the embodiments of the present invention introduce a barrier layer in the large-area perovskite solar cell module. The barrier layer is located on both sides of the metal electrode interconnect between two sub-cells of the large-area perovskite solar cell module. The barrier layer adopts oxides, two-dimensional materials and polymers. Due to the corrosion resistance of the materials used, as a protective film, it can significantly slow down the corrosion rate of the metal, making it more robust and corrosion-resistant. The barrier layer has good thermal conductivity, which helps to greatly improve the heat dissipation performance during device operation. The barrier layer material has good hydrophobicity, which can also isolate the perovskite layer from the external water and oxygen phase. The barrier layer has excellent chemical inertness, and the double barrier layer design can effectively block the mutual diffusion and reaction between the metal electrodes and halides between the interconnected sub-cells (including lateral and longitudinal directions), enhancing the long-term stability of the device, which is of great significance for the commercial development of large-area perovskite solar cells.

[0034] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell module provided in an embodiment of the present invention;

[0036] Figure 2 This is a schematic diagram of a method for preparing a perovskite solar cell module according to an embodiment of the present invention;

[0037] Figures 3(a) to 3(k) This is a schematic diagram of the structure corresponding to the fabrication method of the perovskite solar cell module provided in the embodiments of the present invention.

[0038] Explanation of reference numerals in the attached figures:

[0039] 1-Transparent glass substrate; 2-Transparent electrode layer; 3-Electron transport layer; 4-Perovskite layer; 5-Hole transport layer; 6-Blocking layer; 7-Metal electrode layer; 11-First groove; 21-Second groove; 31-Third groove; 41-Fourth groove. Detailed Implementation

[0040] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0041] To achieve a highly stable, large-area perovskite solar cell module, this invention provides a perovskite solar cell module and its fabrication method.

[0042] Firstly, please see Figure 1 This invention provides a perovskite solar cell module, comprising a transparent electrode layer 2, an electron transport layer 3, a perovskite layer 4, a hole transport layer 5, a blocking layer 6, and a metal electrode layer 7 sequentially stacked on a transparent glass substrate 1. The upper surface of one side of the transparent electrode layer 2 is further provided with the metal electrode layer 7. The blocking layer 6 is any one of an oxide, a two-dimensional material, and a polymer.

[0043] A plurality of first grooves 11 are provided through the transparent electrode layer 2, and each first groove 11 is filled with an electron transport layer 3;

[0044] A plurality of second grooves 21 are provided through the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and each second groove 21 is filled with a barrier layer 6.

[0045] A plurality of third grooves 31 are provided through the barrier layer 6, hole transport layer 5, perovskite layer 4, and electron transport layer 3, and each third groove 31 is filled with a metal electrode layer 7.

[0046] A plurality of fourth grooves 41 are provided through the metal electrode layer 7, the blocking layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and each fourth groove 41 is filled with the blocking layer 6.

[0047] There is a gap between the first groove 11 and the second groove 21; there is no gap between the second groove 21, the third groove 31 and the fourth groove 41.

[0048] Preferably, the transparent electrode layer 2 is any one of ITO and FTO; the electron transport layer 3 is an N-type semiconductor material, such as any one of SnO2, TiO2, and ZnO; the perovskite layer 4 has the general formula ABX3, with a band gap between 1.2 eV and 2.2 eV, where A is a cation selected from one or more of MA, FA, Rb, and Cs, B is a cation selected from one or more of Pb and Sn, and C is an anion selected from one or more of Cl, Br, and I; the hole transport layer 5 is a P-type semiconductor material, such as any one of Spiro-OMeTAD, PTAA, P3HT, PEDOT:PSS, and MoO3; when the barrier layer 6 is an oxide, it can be, for example, Al2O3 or Ga2O3; when the barrier layer 6 is an oxide and is a two-dimensional material, it can be, for example, graphene; when the barrier layer 6 is a polymer, it can be, for example, any one of polymethyl methacrylate (PMMA) and polycarbonate (PC); and the metal electrode layer 7 is any one of Ag, Au, and Cu.

[0049] Preferably, the thickness of the transparent glass substrate 1 is 1 mm to 2 mm; the thickness of the transparent electrode layer is 100 nm to 200 nm; the thickness of the electron transport layer 3 is 80 nm to 100 nm; the thickness of the perovskite layer 4 is 500 nm to 1000 nm; the thickness of the hole transport layer 5 is 80 nm to 100 nm; the thickness of the blocking layer 6 is 10 nm to 20 nm; and the thickness of the metal electrode layer 7 is 80 nm to 100 nm.

[0050] Preferably, the first groove 11, the second groove 21, the third groove 31, and the fourth groove 41 have the same width.

[0051] Preferably, the widths of the first groove 11, the second groove 21, the third groove 31, and the fourth groove 41 are all 50μm to 300μm.

[0052] Preferably, the interval between the first groove 11 and the second groove 21 is 50μm to 200μm.

[0053] In summary, the perovskite solar cell module proposed in this embodiment of the invention includes a transparent electrode layer 2, an electron transport layer 3, a perovskite layer 4, a hole transport layer 5, a blocking layer 6, and a metal electrode layer 7 sequentially stacked on a transparent glass substrate 1. A metal electrode layer 7 is disposed on the upper surface of one side of the transparent electrode layer 2. A plurality of first grooves 11 are disposed through the transparent electrode layer 2, each first groove 11 being filled with an electron transport layer 3. A plurality of second grooves 21 are disposed through the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, each... The second groove 21 is filled with a barrier layer 6; a plurality of third grooves 31 are provided through the barrier layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and each third groove 31 is filled with a metal electrode layer 7; a plurality of fourth grooves 41 are provided through the metal electrode layer 7, the barrier layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and each fourth groove 41 is filled with a barrier layer 6; there is a gap between the first groove 11 and the second groove 21; there is no gap between the second groove 21, the third groove 31, and the fourth groove 41. As can be seen, this embodiment of the invention introduces a barrier layer 6 in a large-area perovskite solar cell module. The barrier layer 6 is located on both sides of the metal electrode interconnect between two sub-cells of the large-area perovskite solar cell module. The barrier layer uses oxides, two-dimensional materials, and polymers. Due to the corrosion resistance of the materials used, it acts as a protective film, which can significantly slow down the corrosion rate of the metal, making it more robust and corrosion-resistant. The barrier layer has good thermal conductivity, which helps to greatly improve the heat dissipation performance during device operation. The barrier layer 6 material has good hydrophobicity, which can also isolate the perovskite layer 4 from the external water and oxygen phase. The barrier layer 6 has excellent chemical inertness, and the design of the double barrier layer 6 can effectively block the mutual diffusion and reaction between the metal electrodes and halides between the interconnected sub-cells (including lateral and longitudinal directions), enhancing the long-term stability of the device. This is of great significance for the commercial development of large-area perovskite solar cells.

[0054] Secondly, please see Figure 2 This invention provides a method for preparing a perovskite solar cell module, comprising the following steps:

[0055] S10. Grow a transparent electrode layer 2 on a transparent glass substrate 1.

[0056] Here, as shown in Figure 3(a), the transparent electrode layer 2 can be deposited on the transparent glass substrate 1 by electron evaporation, or the existing transparent glass substrate 1 with the transparent electrode layer 2 integrated can be used.

[0057] Preferably, the thickness of the transparent glass substrate 1 is 1 mm to 2 mm; the thickness of the transparent electrode layer 2 is 100 nm to 200 nm; and the transparent electrode layer 2 is either ITO or FTO.

[0058] S20. Etch several first grooves 11 through the transparent electrode layer 2 on the transparent electrode layer 2.

[0059] This invention provides an optional solution whereby a plurality of first grooves 11 are etched on the transparent electrode layer 2 using a laser scribing device to obtain the patterned structure shown in Figure 3(b), and the entire substrate, including the transparent glass substrate 1 and the transparent electrode layer 2, is cleaned and treated with ultraviolet light (UV). Preferably, the width of each first groove 11 is 50 μm to 300 μm.

[0060] For example, the specific process can be as follows: The transparent electrode layer 2 is patterned as shown in Figure 3(b) using a laser etching machine. The laser power is 80%, the etching speed is 1000 mm / s, and the etching count is 15 times. The width of each first groove 11 is 100 μm. The entire substrate is then sequentially immersed in Decon-90 aqueous solution, deionized water, and anhydrous ethanol, and ultrasonically cleaned for 20 minutes each. Finally, after drying with a nitrogen gun, the cleaned substrate is treated in a UV-Ozone environment for 30 minutes.

[0061] For example, the specific process can be as follows: The transparent electrode layer 2 is patterned using a laser etching machine as shown in Figure 3(b). The laser power is 80%, the etching rate is 1000 mm / s, and the etching is repeated 15 times. The width of each first groove 11 is 150 μm. The entire substrate is then sequentially immersed in Decon-90 aqueous solution, deionized water, and anhydrous ethanol, and ultrasonically cleaned for 20 minutes each. Finally, after drying with a nitrogen gun, the cleaned substrate is treated in a UV-Ozone environment for 30 minutes.

[0062] S30. An electron transport layer 3 is grown on the transparent electrode layer 2 and within each first groove 11.

[0063] An embodiment of the present invention provides an optional solution, as shown in FIG3(c), wherein an electron transport layer 3 is grown on the transparent electrode layer 2 and within each first groove 11 using a spin coating method or an immersion method. Preferably, the thickness of the electron transport layer 3 is 80nm to 100nm; the electron transport layer 3 is an N-type semiconductor material, such as any one of SnO2, TiO2, and ZnO.

[0064] For example, the specific process can be as follows: 80 μL of SnO2 solution is spin-coated onto a UV-Ozone-treated substrate in air at a speed of 3000 rpm for 30 seconds, and then annealed on a hot plate at 150°C in air for 30 minutes to obtain an electron transport layer 3 made of SnO2. The SnO2 solution is prepared by mixing SnO2 dispersion and deionized water in a 1:2 ratio.

[0065] For example, the specific process could be as follows: using tweezers, the conductive glass substrate is directly placed into a beaker containing a SnO2 solution. After 10 seconds, the glass substrate is immediately removed and annealed on a hot plate at 150°C for 30 minutes. The SnO2 solution is prepared by mixing SnO2 dispersion and deionized water in a 1:2 ratio.

[0066] S40. A perovskite layer 4 is grown on electron transport layer 3.

[0067] This invention provides an optional solution, as shown in Figure 3(d), in which a large-area perovskite layer 4 is grown on the electron transport layer 3 using a blade coating method, a wire rod coating method, or a slot coating method. Crystallization is then completed by annealing. Preferably, the thickness of the perovskite layer 4 is 500 nm to 1000 nm; the general structural formula of the perovskite layer 4 is ABX3, with a band gap between 1.2 eV and 2.2 eV, where A is a cation selected from one or more of MA, FA, Rb, and Cs, B is a cation selected from one or more of Pb and Sn, and C is an anion selected from one or more of Cl, Br, and I.

[0068] For example, the specific process can be as follows: The substrate prepared by S30 is first UV-treated for 30 minutes, then fixed onto the substrate. The gap between the squeegee and the glass substrate is 150 μm. 40 μL of MAPbI3 solution is taken from the squeegee using a pipette and evenly squeezed into the gap between the squeegee and the substrate. Then, the coating is applied at room temperature with a squeegee speed of 25 mm / s and an air knife pressure of 0.1 MPa, and dried. Finally, it is annealed at 100℃ for 10 minutes to complete the deposition of the perovskite light-absorbing layer. The MAPbI3 precursor solution is prepared as follows: 536.7 mg of MAI (methyl iodide) powder and 691.5 mg of ultra-dry PbI2 particles are dissolved in 1 mL of 2-Me (2-methoxyethanol) and stirred evenly at room temperature to prepare a precursor solution with a concentration of 1.5 mmol / mL.

[0069] For example, a specific process could be as follows: the substrate prepared by S30 is first UV-treated for 30 minutes, then fixed onto the substrate, with the doctor blade spaced 150 μm from the glass substrate, and a pipette is used to transfer liquid from the FA... 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 )3. Take 30 μL of the precursor solution and squeeze it evenly into the gap between the doctor blade and the substrate. Then, coat the film at room temperature with a doctor blade speed of 5 mm / s and an air knife pressure of 0.2 MPa, and blow it dry. Then, anneal at 150℃ for 5 min to complete the deposition of the perovskite light-absorbing layer. Among them, FA 0.8 Cs 0.2 Pb(I 0.7Br 0.3 3. The precursor solution was prepared as follows: 165.1 mg of FAI (formamidinium iodide) powder, 62.4 mg of ultra-dry CsI particles, 580.9 mg of ultra-dry PbI2 particles and 198.2 mg of ultra-dry PbBr2 particles were dissolved in 1 mL of a mixed solution of DMF (dimethylformamide) and NMP (N-methylpyrrolidone) in a volume ratio of 9:1 to prepare a precursor solution with a concentration of 1.2 mmol / mL.

[0070] S50. A hole transport layer 5 is grown on the perovskite layer 4.

[0071] An embodiment of the present invention provides an optional solution, as shown in FIG3(e), wherein a hole transport layer 5 is grown on the perovskite layer 4 by spin coating or blade coating. Preferably, the thickness of the hole transport layer is 80nm to 100nm; the hole transport layer 5 is a P-type semiconductor material, such as any one of Spiro-OMeTAD, PTAA, P3HT, PEDOT:PSS, and MoO3.

[0072] For example, the specific process can be as follows: The substrate prepared by S40 is placed in a glove box under N2 atmosphere. 300 μL of Spiro-OMeTAD solution is spin-coated onto the perovskite layer 4. After spin-coating, the substrate is dried at room temperature, thereby preparing a hole transport layer 5 made of Spiro-OMeTAD on the perovskite light-absorbing layer. The Spiro-OMeTAD solution is prepared as follows: 90 mg of Spiro-OMeTAD powder is dissolved in 1 mL of a mixed solution of CB (chlorobenzene), 45 μL of Li salt (170 mg / mL), 75 μL of Co salt (100 mg / mL), and 75 μL of tBP. The solution is stirred at room temperature until completely dissolved to obtain the Spiro-OMeTAD solution.

[0073] For example, the specific process can be as follows: The substrate prepared by S40 is placed in a glove box under a N2 atmosphere. 200 μL of P3HT solution is dynamically spin-coated onto the perovskite layer 4 at a speed of 4000 rpm. After spin-coating, the substrate is dried at room temperature, thereby preparing a hole transport layer 5 made of P3HT on the perovskite light-absorbing layer. The P3HT solution is prepared as follows: P3HT powder is directly dissolved in ethanol, with a concentration of 0.4 mmol / mL.

[0074] S60. A plurality of second grooves 21 are etched on the hole transport layer 5, penetrating the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3; wherein there is a gap between the second grooves 21 and the first grooves 11.

[0075] An embodiment of the present invention provides an optional solution, as shown in FIG3(f), wherein a plurality of second grooves 21 are etched on the hole transport layer 5 by a laser scribing device. Each second groove 21 penetrates the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and the width of the second groove 21 is the same as that of the first groove 11, and there is a gap between them. Preferably, the thickness of the barrier layer 6 is 10nm to 20nm; the gap between the first groove 11 and the second groove 21 is 50μm to 200μm.

[0076] For example, the specific process can be as follows: use a laser etching machine to perform patterning on the substrate obtained by S50 as shown in Figure 3(f), the laser power is 30%, the etching speed is 2000mm / s, the number of etching times is 4, the width of each second groove 21 is 100μm, and the interval between the second groove 21 and the first groove 11 is 50μm.

[0077] For example, the specific process can be as follows: use a laser etching machine to perform patterning treatment on the substrate obtained by S50 as shown in Figure 3(f), the laser power is 30%, the etching speed is 2000mm / s, the number of etching times is 4, the width of each second groove 21 is 150μm, and the interval between the second groove 21 and the first groove 11 is 100μm.

[0078] S70. A barrier layer 6 is grown on the hole transport layer 5 and within each second groove 21.

[0079] This invention provides an optional solution, as shown in Figure 3(g), where an oxide-based barrier layer 6 is grown on the hole transport layer 5 and within each second groove 21 using PVD or ALD processes; a two-dimensional material-based barrier layer 6 is grown on the hole transport layer 5 and within each second groove 21 using CVD processes; or a polymer-based barrier layer 6 is grown on the hole transport layer 5 and within each second groove 21 using CVD, vacuum thermal evaporation, spin coating, blade coating, wire rod coating, or slot coating. Preferably, the thickness of the barrier layer 6 is 10 nm to 20 nm; when the barrier layer 6 is an oxide, it can be, for example, Al2O3 or Ga2O3; when the barrier layer 6 is a two-dimensional material, it can be, for example, graphene; and when the barrier layer 6 is a polymer, it can be, for example, any one of polymethyl methacrylate (PMMA) and polycarbonate (PC).

[0080] For example, the specific process can be: using the ALD process, a deposition rate of 10nm / 125cycles is used to deposit an Al2O3 barrier layer 6 with a thickness of 10nm.

[0081] For example, the specific process can be as follows: deposit a graphene barrier layer with a thickness of 8nm using CVD process.

[0082] For example, the specific process can be as follows: using an automatic dispensing machine to form polycarbonate PC on the hole transport layer 5 and in each second groove 21.

[0083] S80. A plurality of third grooves 31 are etched on the barrier layer 6, penetrating the barrier layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3; wherein there is no gap between the third grooves 31 and the second grooves 21.

[0084] An embodiment of the present invention provides an optional solution, as shown in FIG3(h), wherein a plurality of third grooves 31 are etched on the barrier layer 6 by means of a laser scribing device. Each third groove 31 penetrates the barrier layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and the width of the third groove 31 is the same as that of the first groove 11, and there is no gap between the third groove 31 and the second groove 21.

[0085] For example, the specific process can be as follows: use a laser etching machine to perform patterning on the substrate obtained by S80 as shown in Figure 3(h), the laser power is 30%, the etching speed is 2000mm / s, the number of etching times is 4, the width of each third groove 31 is 100μm, and there is no gap between the third groove 31 and the second groove 21.

[0086] For example, the specific process can be as follows: use a laser etching machine to perform patterning treatment on the substrate obtained by S80 as shown in Figure 3(h), the laser power is 30%, the etching speed is 2000mm / s, the number of etching times is 4, the width of each third groove 31 is 150μm, and there is no gap between the third groove 31 and the second groove 21.

[0087] S90. A metal electrode layer 7 is grown on the barrier layer 6, the transparent electrode layer 2, and in each third groove 31.

[0088] An embodiment of the present invention provides an optional solution, as shown in FIG3(i), wherein a metal electrode layer 7 is grown on the barrier layer 6, the transparent electrode layer 2, and within each third groove 31 using an electron evaporation method. Preferably, the thickness of the metal electrode layer 7 is 80 nm to 100 nm; the metal electrode layer 7 is any one of Ag, Au, and Cu.

[0089] For example, the specific process could be: under a vacuum degree of 5.4 × 10⁻⁶ -4 Under the condition of Pa, the electrode metal Au is vapor-deposited on the barrier layer 6 and the transparent electrode layer 2 to obtain an 80nm thick metal electrode layer 7, and the electrode metal Au is vapor-deposited in each third groove 31.

[0090] For example, a specific process could be: under a vacuum of 5.4 × 10⁻⁶ -4Under the condition of Pa, electrode metal Ag is vapor-deposited on the barrier layer 6 and the transparent electrode layer 2 to obtain an 80nm thick metal electrode layer 7, and electrode metal Ag is vapor-deposited in each third groove 31.

[0091] S100, etching a plurality of fourth grooves 41 through the metal electrode layer 7, the blocking layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3 on the metal electrode layer 7; wherein there is no gap between the fourth grooves 41 and the third grooves 31.

[0092] An embodiment of the present invention provides an optional solution, as shown in FIG3(j), wherein a plurality of fourth grooves 41 are etched on the metal electrode layer 7 by means of a laser scribing device. Each fourth groove 41 penetrates the metal electrode layer 7, the blocking layer 6, the hole transport layer 5, the perovskite layer 4, and the electron transport layer 3, and the width of the fourth groove 41 is the same as that of the first groove 11, and there is no gap between the fourth groove 41 and the third groove 31.

[0093] For example, the specific process can be as follows: use a laser etching machine to perform patterning on the substrate obtained by S100 as shown in Figure 3(j), the laser power is 15%, the etching speed is 1000mm / s, the etching number is 1 time, the width of each fourth groove 41 is 100μm, and there is no gap between the fourth groove 41 and the third groove 31.

[0094] For example, the specific process can be as follows: use a laser etching machine to perform patterning treatment on the substrate obtained by S100 as shown in Figure 3(j), the laser power is 15%, the etching speed is 1000mm / s, the etching number is 1 time, the width of each fourth groove 41 is 150μm, and there is no gap between the fourth groove 41 and the third groove 31.

[0095] S110, A barrier layer 6 is grown in the fourth groove 41.

[0096] An embodiment of the present invention provides an optional solution, as shown in FIG3(k), in which a barrier layer 6 is grown in the fourth groove 41 using the growth method of S70. For the specific process, please refer to S70.

[0097] In summary, this invention provides a method for fabricating a perovskite solar cell module. Based on the perovskite solar cell module proposed in the first aspect, a corresponding feasible fabrication process is given. During the fabrication process, a barrier layer 6 is introduced into the large-area perovskite solar cell module. The barrier layer 6 is located on both sides of the metal electrode interconnect between two sub-cells of the large-area perovskite solar cell module. The barrier layer uses oxides, two-dimensional materials, and polymers. Due to the corrosion resistance of the materials used, it acts as a protective film, significantly slowing down the corrosion rate of the metal and making it more robust and corrosion-resistant. The barrier layer has good thermal conductivity, which helps to greatly improve the heat dissipation performance during device operation. The barrier layer 6 material has good hydrophobicity, which can also isolate the perovskite layer 4 from the external water and oxygen phase. The barrier layer 6 has excellent chemical inertness, and the double-layer barrier layer 6 design can effectively block the mutual diffusion and reaction between the metal electrodes and halides between the interconnected sub-cells (including lateral and longitudinal directions), enhancing the long-term stability of the device. This is of great significance for the commercial development of large-area perovskite solar cells.

[0098] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0099] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art, by reviewing the specification and accompanying drawings, will understand and implement other variations of the disclosed embodiments in carrying out the claimed invention. In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0100] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A perovskite solar cell module, characterized by, The application relates to a perovskite solar cell module, which comprises a transparent electrode layer, an electron transport layer, a perovskite layer, a hole transport layer, a barrier layer and a metal electrode layer which are sequentially stacked on a transparent glass substrate, and the upper surface of one side of the transparent electrode layer is provided with the metal electrode layer; the barrier layer is any one of an oxide, a two-dimensional material and a polymer; the transparent electrode layer is any one of ITO and FTO; the electron transport layer is an N-type semiconductor material; the perovskite layer has a general structure of ABC3, the band gap is between 1.2ev and 2.2ev, A is a cation and is selected from one or more of MA, FA, Rb and Cs, B is a cation and is selected from one or more of Pb and Sn, and C is an anion and is selected from one or more of Cl, Br and I; the hole transport layer is a P-type semiconductor material; the metal electrode layer is any one of Ag, Au and Cu; wherein, A plurality of first grooves are arranged through the transparent electrode layer, and each first groove is filled with the electron transport layer; A plurality of second grooves are arranged through the hole transport layer, the perovskite layer and the electron transport layer, and each second groove is filled with the barrier layer; A plurality of third grooves are arranged through the barrier layer, the hole transport layer, the perovskite layer and the electron transport layer, and each third groove is filled with the metal electrode layer; A plurality of fourth grooves are arranged through the metal electrode layer, the barrier layer, the hole transport layer, the perovskite layer and the electron transport layer, and each fourth groove is filled with the barrier layer; The first grooves and the second grooves are spaced apart; the second grooves, the third grooves and the fourth grooves are not spaced apart; the first grooves, the second grooves, the third grooves and the fourth grooves have the same width.

2. The perovskite solar cell module according to claim 1, characterized by, The thickness of the transparent glass substrate is 1mm-2mm; the thickness of the transparent electrode layer is 100nm-200nm; the thickness of the electron transport layer is 80nm-100nm; the thickness of the perovskite layer is 500nm-1000nm; the thickness of the hole transport layer is 80nm-100nm; the thickness of the barrier layer is 10nm-20nm; and the thickness of the metal electrode layer is 80nm-100nm.

3. The perovskite solar cell module according to claim 1, characterized in that, The width of the first grooves, the second grooves, the third grooves and the fourth grooves is 50mu m-300mu m.

4. The perovskite solar cell module according to claim 1, characterized in that, The spacing between the first grooves and the second grooves is 50mu m-200mu m.

5. A method for producing a perovskite solar cell module, characterized by, A method for preparing the perovskite solar cell module of any one of claims 1-4 comprises the following steps: growing a transparent electrode layer on a transparent glass substrate; etching a plurality of first grooves through the transparent electrode layer on the transparent electrode layer; growing an electron transport layer on the transparent electrode layer and in each first groove; growing a perovskite layer on the electron transport layer; growing a hole transport layer on the perovskite layer; Etching a plurality of second grooves through the hole transport layer, the perovskite layer, and the electron transport layer on the hole transport layer, wherein the second grooves are spaced apart from the first grooves; Growth of a barrier layer on the hole transport layer and in each of the second grooves; Etching a plurality of third grooves through the barrier layer, the hole transport layer, the perovskite layer, and the electron transport layer on the barrier layer, wherein the third grooves are not spaced apart from the second grooves; Growth of a metal electrode layer on the barrier layer, on the transparent electrode layer, and in each of the third grooves; Etching a plurality of fourth grooves through the barrier layer, the metal electrode layer, the hole transport layer, the perovskite layer, and the electron transport layer on the barrier layer, wherein the fourth grooves are not spaced apart from the third grooves; Growth of the barrier layer in the fourth grooves.

6. The method for preparing a perovskite solar cell module according to claim 5, characterized in that, The electron transport layer is grown by spin coating or dip coating; the perovskite layer is grown by doctor blade coating or wire bar coating or slot coating; the hole transport layer is grown by spin coating or doctor blade coating; the barrier layer of oxide is grown by PVD or ALD process, the barrier layer of two-dimensional material is grown by CVD process, the barrier layer of polymer is grown by CVD or vacuum thermal evaporation or spin coating or doctor blade coating or wire bar coating or slot coating; and the metal electrode layer is grown by electron evaporation.

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