A TES detector capable of wide-band energy detection

Abstract

This application relates to a TES detector capable of wideband energy detection, comprising: a heat sink; a TES body disposed at the center of the heat sink; a thermally conductive film covering the TES body and having two or more branches; a main absorber made of a thick block of superconducting material with a thickness of H6 bonded directly to the surface of the TES body via epoxy resin, such that the main absorber E's orthographic projection onto the TES body covers the entire TES body; and one or more absorbers of different specifications. The present invention has the beneficial effect of being compatible with multiple wavelength bands, expanding the applicability of the TES detector.

Description

Technical Field

[0001] The present application belongs to the technical field of superconducting transition edge detectors, and in particular relates to a TES detector capable of realizing wide-band energy detection. Background Art

[0002] Transition-Edge Sensors (TES) are a class of extremely sensitive, low-temperature superconducting detectors that exploit the high temperature sensitivity of thin-film resistance during superconducting phase transitions to detect incident photon energy. TES detectors boast energy resolution nearly two orders of magnitude higher than semiconductors, a wider energy response range, and higher detection efficiency than gratings. They can also be arrayed using a multiplexed readout method to achieve a larger detection area, making them a key development direction in space X-ray astronomy over the past decade. Due to their ultra-high energy resolution, TES detectors have been applied in materials science research, nuclide fine structure measurements, and nuclear safety testing, and will become core detectors for future large-scale space X-ray satellites such as Europe's ATHENA, Japan's SuperDIOS, and China's HUBS. Integrating X-ray TES devices into material element characterization instruments will support improvements in material and linewidth characterization, promote scientific and technological progress in materials, nanoscience, and precision measurement, and provide metrological services for cutting-edge research in advanced light sources, space exploration, and other areas currently under construction and planning.

[0003] By combining different types of photon absorbers, TES detectors (including absorbers) can detect radiation over a wide wavelength range, from millimeter waves to X-rays and gamma rays. TES applications span the electromagnetic spectrum, including microwaves, terahertz, infrared, visible light, X-rays, and gamma rays. In the X-ray field, in particular, TES currently achieves an energy resolution of <2eV at 5.9keV. Most applications utilize highly integrated TES detector arrays.

[0004] At present, the applicable band of TES detectors in the existing technology is relatively narrow, which brings many inconveniences. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a TES detector capable of realizing wide-band energy detection in order to solve the problem that the TES detector in the prior art is applicable to a relatively narrow band.

[0006] The technical solution adopted by the present invention to solve its technical problem is:

[0007] A TES detector capable of realizing wide-band energy detection, comprising:

[0008] heat sink;

[0009] A TES body disposed at the center of the heat sink;

[0010] A thermally conductive film, covering the TES body, having two or more branches;

[0011] A main absorber of a thick block of superconductor material with a thickness of H6 is directly bonded to the surface of the TES body by epoxy resin, and the orthographic projection of the main absorber E toward the TES body can cover the entire TES body;

[0012] Also includes one or more of the following absorbents:

[0013] a first absorber formed on the first branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H1;

[0014] a second absorber formed on the second branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H2;

[0015] a third absorber, formed on the third branch by magnetron sputtering or electroplating a first heat-conducting material with a thickness of H3 and a second heat-conducting material with a thickness of H4;

[0016] The fourth absorber is a thick block of superconductor material with a thickness of H5 and is bonded to the fourth branch by epoxy resin.

[0017] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the thick block superconductor material is Sn, Ta, Pb or In.

[0018] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the first thermally conductive material is a high atomic number metal, and the second thermally conductive material is a high atomic number semi-metal.

[0019] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the high atomic number metal is Au, and the high atomic number semimetal is Bi.

[0020] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the first absorber, the second absorber, the third absorber, and the fourth absorber are evenly arranged around the four sides of the TES main body.

[0021] Preferably, in the TES detector capable of realizing wideband energy detection of the present invention, H1 is 300-700 nm, H2 is 1-3 μm, H3 is 1-3 μm, H4 is 5-100 μm, H5 is 100-400 μm, and H6 is 500-2000 μm.

[0022] Preferably, the TES detector of the present invention that can realize wide-band energy detection, the processing method of the TES body is: first photolithography out the TES pattern, deposit a certain thickness of Ti or Mo film by evaporation or magnetron sputtering, and then continue to deposit a certain thickness of Au or Cu film to form a double-layer film.

[0023] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the thermally conductive film is Au or epoxy resin.

[0024] Preferably, in the TES detector capable of realizing wide-band energy detection of the present invention, the first absorber, the second absorber, the third absorber, the fourth absorber and the main absorber E are all in the shape of square blocks.

[0025] Preferably, the TES detector of the present invention can realize wide-band energy detection.

[0026] The energy that the first absorber can absorb is below 1keV;

[0027] The energy that the second absorber can absorb is below 10keV;

[0028] The energy that the third absorber can absorb is below 100keV;

[0029] The fourth absorber can absorb energy below 500keV;

[0030] The main absorber can absorb energy above 500keV.

[0031] The beneficial effects of the present invention are: compatibility with multiple wavebands, and expansion of the applicable scope of the TES detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The technical solution of the present application is further described below with reference to the accompanying drawings and embodiments.

[0033] Figure 1 1. This is a top view of the TES detector structure capable of realizing wide-band energy detection according to an embodiment of the present application;

[0034] Figure 2 yes Figure 1 AA cross-sectional view;

[0035] Figure 3 yes Figure 1 BB cross-sectional view.

[0036] The reference numerals in the figures are:

[0037] a first absorbent body A;

[0038] Second absorbent body B;

[0039] A third absorber C;

[0040] a fourth absorber D;

[0041] Main absorbent body E. DETAILED DESCRIPTION

[0042] It should be noted that, unless there is any conflict, the embodiments and features in the embodiments of this application can be combined with each other.

[0043] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the scope of protection of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0044] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood based on the specific circumstances. In this embodiment, if the X, Y, Z directions or the X, Y, Z axes are involved, they are all based on the Cartesian coordinate system.

[0045] The technical solution of the present application will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0046] Example

[0047] This embodiment provides a TES detector that can realize wide-band energy detection, such as Figure 1-3 Shown, including:

[0048] heat sink;

[0049] A TES body disposed at the center of the heat sink;

[0050] A thermally conductive film, covering the TES body, having two or more branches;

[0051] A main absorber E of thick superconductor material with a thickness of H6 is directly bonded to the surface of the TES body using epoxy resin. The main absorber E's orthographic projection toward the TES body can cover the entire TES body. The main absorber E is the thickest and must be placed above the TES body because when low-energy radiation is irradiated, if the thickest main absorber E is not there to block the TES body, the radiation will directly irradiate the TES body and penetrate the TES body.

[0052] Also includes one or more of the following absorbents:

[0053] A first absorber A, formed on the first branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H1;

[0054] a second absorber B formed on the second branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H2;

[0055] A third absorber C is formed on the third branch by magnetron sputtering or electroplating a first heat-conducting material with a thickness of H3 and a second heat-conducting material with a thickness of H4;

[0056] The fourth absorber D is a thick block of superconductor material with a thickness of H5 and is bonded to the fourth branch by epoxy resin.

[0057] like Figure 2 As shown, the first absorber A is formed by magnetron sputtering or electroplating 300-700 nm Au and connected to the TES main body via an Au thermal bonding structure. The third absorber C is composed of 1-3 μm Au and 5-100 μm Bi by magnetron sputtering or electroplating and connected to the TES main body via an Au thermal bonding structure. The main absorber E is a 500-2000 μm thick block of Sn or Ta directly bonded to the TES surface using epoxy resin. Sn or Ta can be replaced with other superconductors (such as Pb and In), which have strong absorption and cutoff capabilities for high-energy radiation and particularly rapid and complete thermalization. Au can be replaced with other high-atomic-number metals, with high-atomic-number (Z) elements typically used as absorbers. The absorber should have high X-ray absorption cutoff capability, low heat capacity, and good thermal conductivity. The semimetallic Bi is widely used due to its high atomic number (Z = 83) and low heat capacity. Au is also often used to make absorbers due to its high atomic number (Z=79) and lower heat capacity than ordinary metals.

[0058] like Figure 3As shown, the second absorber B is formed by magnetron sputtering or electroplating 1-3μm Au and is connected to the TES main body via an Au thermal connection structure. The fourth absorber D is formed by bonding a 100-400μm thick block of Sn or Ta to the Au thermal conductive layer using epoxy resin and is connected to the TES via an Au thermal connection structure. The fourth absorber D has a length and width of 1-3mm and a thickness of 100-400μm. The main absorber E has a length and width of 1-3mm and a thickness of 500-2000μm. The fourth absorber D and the main absorber E are separated by a distance of 10-100μm.

[0059] Preferably, in the TES detector capable of wideband energy detection of this embodiment, the first absorber A, the second absorber B, the third absorber C, and the fourth absorber D are evenly arranged around the four sides of the TES body. This arrangement structure can evenly disperse the absorbers and avoid interference errors.

[0060] Preferably, the TES detector of this embodiment can realize wide-band energy detection, and the processing method of the TES body is: first photolithography out the TES pattern, deposit a certain thickness of Ti or Mo film by evaporation or magnetron sputtering, and then continue to deposit a certain thickness of Au or Cu film to form a double-layer film.

[0061] Preferably, in the TES detector of this embodiment capable of realizing wide-band energy detection, the thermally conductive film is Au or epoxy resin.

[0062] Preferably, in the TES detector capable of realizing wide-band energy detection of this embodiment, the first absorber A, the second absorber B, the third absorber C, the fourth absorber D and the main absorber E are all in the shape of square blocks.

[0063] Preferably, the TES detector of this embodiment can realize wide-band energy detection.

[0064] The energy that the first absorber A can absorb is below 1 keV;

[0065] The energy that the second absorber B can absorb is below 10keV;

[0066] The energy that the third absorber C can absorb is below 100 keV;

[0067] The energy that the fourth absorber D can absorb is below 500 keV;

[0068] The energy that the main absorber E can absorb is above 500 keV.

[0069] In this embodiment, the heat sink is made of (silicon + silicon oxide + silicon nitride), the TES body is made of (Ti / Au, Mo / Au, or Mo / Cu double-layer thin film, or AlMn alloy), and the electrodes are made of (Nb or Al). The electrodes are wires pressed against the sides of the TES body and the external wires used to connect to the voltage bias circuit. The thermal connection structure is made of (Au or epoxy resin).

[0070] The working principle of the TES detector of this embodiment in detecting energy in different bands is as follows:

[0071] When TES detects photons, it requires an absorber structure that specifically absorbs photons. The absorber needs to have high stopping power, low heat capacity, and good thermalization properties.

[0072] In the process of detecting photons with energy below 1 keV, the first absorber A can act as an absorber, with sufficient ability to block photons so that all the photon energy is deposited on the film.

[0073] When detecting photons between 1keV and 10keV, the second absorber B with a thicker film is used to detect energy in this wavelength band.

[0074] For photon detection with energies between 10keV and 100keV, thin-film absorption alone becomes impractical. Electrodeposition can be used to grow 10-100μm thick thin films for absorbing high-energy photons. The third absorber, C, is used to detect energy in this band.

[0075] For high-energy photon detection in the 100keV-500keV range, a bulk absorber that can be coupled to the superconducting thin film TES needs to be fabricated separately. The fourth absorber D is used to detect energy in this wavelength range.

[0076] For high-energy photon detection above 500 keV, a thicker bulk absorber that can be coupled to the superconducting thin film TES needs to be prepared separately. The main absorber E is used to detect energy in this band.

[0077] Based on the above-mentioned ideal embodiments of this application, and in accordance with the above description, relevant personnel can make various changes and modifications without departing from the scope of the technical concept of this application. The technical scope of this application is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A TES detector capable of realizing wide-band energy detection, characterized in that: include: heat sink; A TES body disposed at the center of the heat sink; A thermally conductive film, covering the TES body, having two or more branches; A main absorber (E) of thick block-shaped superconductor material with a thickness of H 6 is directly bonded to the surface of the TES body by epoxy resin, and the orthographic projection of the main absorber E toward the TES body can cover the entire TES body; Also includes one or more of the following absorbents: a first absorber (A), formed on the first branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H1; a second absorber (B) formed on the second branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H 2; a third absorber (C), formed on the third branch by magnetron sputtering or electroplating a first thermally conductive material with a thickness of H3 and a second thermally conductive material with a thickness of H4; The fourth absorber (D) is a thick block of superconductor material with a thickness of H 5, which is bonded to the fourth branch by epoxy resin; Among them, H1 is 300~700nm, H2 is 1~3μm, H3 is 1~3μm, H4 is 5~100μm, H5 is 100~400μm, and H6 is 500~2000μm.

2. The TES detector capable of realizing wide-band energy detection according to claim 1, characterized in that: The thick block superconductor material is Sn, Ta, Pb or In.

3. The TES detector capable of realizing wide-band energy detection according to claim 1, characterized in that: The first heat-conducting material is a high-atomic-number metal, and the second heat-conducting material is a high-atomic-number semi-metal.

4. The TES detector capable of realizing wide-band energy detection according to claim 3, characterized in that: The high atomic number metal is Au, and the high atomic number semimetal is Bi.

5. The TES detector capable of realizing wide-band energy detection according to any one of claims 1 to 4, characterized in that: The first absorbent body (A), the second absorbent body (B), the third absorbent body (C), and the fourth absorbent body (D) are evenly arranged around the four sides of the TES body.

6. The TES detector capable of realizing wide-band energy detection according to any one of claims 1 to 4, characterized in that: The processing method of the TES body is: first, a TES pattern is photoetched, a Ti or Mo film of a certain thickness is deposited by evaporation or magnetron sputtering, and then an Au or Cu film of a certain thickness is continuously deposited to form a double-layer film.

7. The TES detector capable of realizing wide-band energy detection according to any one of claims 1 to 4, characterized in that: The thermally conductive film is Au or epoxy resin.

8. The TES detector capable of realizing wide-band energy detection according to any one of claims 1 to 4, characterized in that: The first absorbent body (A), the second absorbent body (B), the third absorbent body (C), the fourth absorbent body (D) and the main absorbent body E are all in the shape of square blocks.

9. The TES detector capable of realizing wide-band energy detection according to any one of claims 1 to 4, characterized in that: The energy that the first absorber (A) can absorb is below 1 keV; The energy that the second absorber (B) can absorb is below 10keV; The energy that the third absorber (C) can absorb is below 100 keV; The fourth absorber (D) can absorb energy below 500 keV; The main absorber (E) can absorb energy above 500keV.

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