Electronic circuit module
By embedding SiC power semiconductors into a multilayer LTCC circuit carrier and performing high-temperature sintering, the complex interconnection process in the prior art is solved, achieving efficient integration and stable connection of SiC power semiconductors in the LTCC circuit carrier, reducing costs and improving temperature resistance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ROBERT BOSCH GMBH
- Filing Date
- 2021-07-22
- Publication Date
- 2026-07-24
AI Technical Summary
In the existing technology, the interconnection process of silicon carbide power semiconductors is complex and costly, making it difficult to integrate efficiently on multilayer LTCC substrates, and external influences can easily damage SiC power semiconductors.
SiC power semiconductors are embedded in multilayer LTCC circuit carriers, and electrothermal connections are formed through a high-temperature sintering process (900℃). By utilizing the similar expansion coefficients of the ceramic material of the LTCC circuit carrier and the SiC power semiconductor, precise spatial positioning and protection can be achieved.
It simplifies the connection process of SiC power semiconductors, reduces costs, and forms more temperature-resistant electrothermal connections through high-temperature sintering, ensuring the stability and reliability of SiC power semiconductors in LTCC circuit carriers.
Smart Images
Figure CN116097434B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to electronic circuit modules. The subject matter of this invention also includes a method for manufacturing a multilayer LTCC circuit carrier for such electronic circuit modules. Background Technology
[0002] Power modules are known from the prior art, in which silicon carbide power semiconductors (SiC power semiconductors) are designed as MOSFET power switches and are first mounted onto an AMB substrate (AMB: Active Metal Brazing) by silver sintering, a special AVT (AVT: Construction and Connection Technology) process with a low sintering temperature below 300°C. Then, a solder pad is sintered onto the SiC power semiconductor again by silver sintering. Solder is then applied to the solder pad, which is subsequently used for bonding to one side of a multilayer LTCC substrate. This means that after the SiC power semiconductor is sintered onto the AMB substrate, there are four additional process steps until the LTCC multilayer substrate is bonded. Summary of the Invention
[0003] The advantages of the electronic circuit module according to the present invention are that at least one silicon carbide power semiconductor (SiC power semiconductor) is embedded or integrated into the LTCC circuit carrier during its fabrication. By embedding the SiC power semiconductor into the LTCC circuit carrier, contact is achieved within the LTCC circuit carrier, thereby protecting it from external influences. Consequently, connection contacts of the SiC power semiconductor can be designed on the front and / or rear sides in a simpler and significantly cheaper manner. Furthermore, the spatial positioning of the SiC power semiconductor can be performed with significantly greater precision. Depending on the structural variant, the semiconductor can be precisely connected flush with the lower or upper side of the LTCC circuit carrier, or completely embedded within the LTCC circuit carrier. Defining downwards or upwards is also feasible. Through a high sintering temperature of 900°C, electrical and / or thermal connections within the LTCC circuit carrier are more heat-resistant than soldering and / or silver sintering connections achieved at lower temperatures. Since the LTCC circuit carrier and the at least one SiC power semiconductor are made of ceramic material, they have approximately the same coefficient of thermal expansion. Therefore, the described integration of at least one SiC power semiconductor can be directly realized in the fabrication process of the LTCC circuit carrier. This achieves optimal coordination between metal functional connections and subsequent process chains with corresponding large cost savings potential.
[0004] Embodiments of the present invention provide an electronic circuit module comprising: a multilayer LTCC circuit carrier, the multilayer LTCC circuit carrier being composed of a structured inorganic substrate layer having an electrically conductive structure and / or a thermally conductive structure for electrical conduction and / or thermal conduction; at least one electronic device disposed on a first side and / or an opposite second side of the LTCC circuit carrier; and at least one SiC power semiconductor. Here, the at least one SiC power semiconductor is embedded in the multilayer LTCC circuit carrier and is surrounded by the multilayer LTCC circuit carrier at at least three sides, wherein the connection contacts of the SiC power semiconductor are in contact with the electrically conductive structure and / or thermally conductive structure of the LTCC circuit carrier.
[0005] Furthermore, a method for manufacturing a multilayer LTCC circuit carrier for such an electronic circuit module is proposed. Here, at least one recess for a corresponding SiC power semiconductor is introduced into at least one original substrate layer having an electrically conductive structure and / or a thermally conductive structure, wherein multiple original substrate layers are stacked, and at least one SiC power semiconductor is inserted into the at least one recess. The original substrate stack having the SiC power semiconductor is laminated under pressure and temperature. The laminated original substrate stack is shrunk in a pressure-supported sintering process into a multilayer LTCC circuit carrier with embedded SiC power semiconductors, wherein the connection contacts of the SiC power semiconductors are contacted with the electrically conductive structure and / or thermally conductive structure of the inorganic substrate layer through the pressure-supported sintering process, which is generated from the original substrate layer having the electrically conductive structure and / or thermally conductive structure through the pressure-supported sintering process.
[0006] The electronic circuit module described above and the method for manufacturing a multilayer circuit carrier for such electronic circuit module can be advantageously improved by the measures and improvements described below.
[0007] Particularly advantageously, the first side of at least one SiC power semiconductor may face the first side of the multilayer LTCC circuit carrier, and the second side of at least one SiC power semiconductor may face the second side of the multilayer LTCC circuit carrier. Therefore, the first side of at least one SiC power semiconductor may correspond to its upper side and the second side to its rear side. Similarly, the first side of the multilayer LTCC circuit carrier may correspond to its upper side and the second side to its lower side.
[0008] In an advantageous design of the electronic circuit module, at least one SiC power semiconductor can fill a corresponding recess, which is introduced into at least one inorganic substrate layer. Thus, the at least one SiC power semiconductor can simply make electrical and / or thermal contact with a corresponding conductive and / or thermally conductive profile at its upper and lower sides, the conductive and / or thermally conductive profile being designed on the lower side of a substrate layer directly above the at least one SiC power semiconductor, or on the upper side of a substrate layer directly below the at least one SiC power semiconductor.
[0009] In another advantageous design of the electronic circuit module, at least one connection contact on a first or second side of at least one SiC power semiconductor can be electrically connected via a via to connection contacts disposed on a first or second side of a multilayer LTCC circuit carrier, or to electronic devices disposed on a first or second side of the multilayer LTCC circuit carrier. Therefore, at least one SiC power semiconductor can be electrically contacted via, for example, electronic devices designed as logic circuits and / or electronic devices designed as discrete devices, disposed on the upper or lower side of the LTCC circuit. Here, the discrete devices can be, for example, ohmic resistors, inductors, or capacitors.
[0010] In another advantageous design of the electronic circuit module, a high-current conductor path can be embedded in a multilayer LTCC circuit carrier and electrically connected via at least one first via to a corresponding connection contact on a first or second side of the multilayer LTCC circuit carrier. Furthermore, the high-current conductor path can be electrically connected via at least one second via to a corresponding connection contact on a first or second side of at least one SiC power semiconductor. Alternatively, the high-current conductor path can be electrically connected via a surface-mount contact to a corresponding connection contact on a first or second side of at least one SiC power semiconductor. Through the high-current conductor path, a current significantly exceeding 20A can be carried within the LTCC circuit carrier. Thus, embodiments of the circuit carrier according to the invention can be used in vehicles or in stationary installations for power output stages with integrated logic.
[0011] In a further advantageous design of the electronic circuit module, at least one first side (or upper side) of the SiC power semiconductor can be flush-connected to the first side (or upper side) of the multilayer LTCC circuit carrier. Alternatively, at least one second side (or rear side) of the SiC power semiconductor can be flush-connected to the second side (or rear side) of the multilayer LTCC circuit carrier. This allows for simple electrical and / or thermal contact between at least one SiC power semiconductor and external components or devices. For example, control devices or power consumers, such as electric motors, can thus directly contact the corresponding connection points of at least one SiC power semiconductor. Additionally, cooling devices, such as cooling bodies, can contact the corresponding connection points of at least one SiC power semiconductor via a thermally conductive but electrically insulating insulating layer.
[0012] In another advantageous design of the electronic circuit module, the contact point on the first side (or upper side) or the second side (or rear side) of at least one SiC power semiconductor can be in planar contact with a thermally conductive and electrically conductive insert, or in planar contact with a thermally conductive and electrically conductive printed thick layer structure. Here, the insert or printed thick layer structure can be flush-connected to the first or second side of the multilayer LTCC circuit carrier. Thus, at least one SiC power semiconductor can be in planar electrical and / or thermal contact with external components or devices.
[0013] Alternatively, at least one SiC power semiconductor can be surrounded by a multilayer LTCC circuit carrier on all four sides. This means that at least one SiC power semiconductor is fully integrated into the LTCC circuit carrier.
[0014] In another advantageous design of the electronic circuit module, at least one SiC power semiconductor can be designed, for example, as a MOSFET power switch.
[0015] In an advantageous design of this method, at least one additional recess can be introduced into at least one original substrate layer before stacking the original substrate layers. During or after stacking, at least one via and / or at least one high-current conductor path track and / or at least one thermally conductive and electrically conductive insert can be inserted into the at least one additional recess as an additional electrical conductive structure, and / or at least one thermally conductive and electrically conductive thick layer structure can be printed into the at least one additional recess as an additional electrical conductive structure. Thus, the electrical conductive structures and / or thermal conductive structures designed on the upper or rear side of the original substrate layer can contact each other or contact the connection points on the first (or upper) side or the second (or rear) side of the LTCC circuit carrier.
[0016] In another advantageous design of this method, the pressure-supported sintering process can shrink the thickness of the original substrate layer, resulting in a thinner substrate layer than the original substrate layer. Furthermore, the height of the recess introduced into at least one original substrate layer can be designed to be higher than the SiC power semiconductor, wherein the height of the recess in at least one original substrate layer is selected such that the height of the shrunken recess in at least one shrunken substrate layer is equal to the height of the SiC power semiconductor, and at least one SiC power semiconductor fills the corresponding shrunken recess. Thus, the substrate layer of the LTCC circuit carrier is precisely shrunken onto at least one SiC power semiconductor. Here, the electrically conductive structure and / or thermally conductive structure, as well as conductor paths and vias, contact the connection points on at least one SiC power semiconductor, causing the electrically conductive structure and / or thermally conductive structure, as well as conductor paths and vias, to also be sintered together with the connection points of at least one SiC power semiconductor, forming a stable electrical connection with ohmic contacts.
[0017] Embodiments of the present invention are shown in the accompanying drawings and explained in more detail in the following description. In the drawings, the same reference numerals denote parts or elements that have the same or similar functions. Attached Figure Description
[0018] Figure 1 The diagram shows a portion of an embodiment of an LTCC circuit carrier at different time points during a method according to the invention for manufacturing a multilayer LTCC circuit carrier for an electronic circuit module according to the invention.
[0019] Figure 2 A schematic cross-sectional view of a first embodiment of an electronic circuit module according to the present invention is shown.
[0020] Figure 3 A schematic cross-sectional view of a second embodiment of the electronic circuit module according to the present invention is shown.
[0021] Figure 4 A schematic cross-sectional view of a third embodiment of the electronic circuit module according to the present invention is shown.
[0022] Figure 5 A schematic cross-sectional view of a fourth embodiment of the electronic circuit module according to the present invention is shown. Detailed Implementation
[0023] In the method according to the present invention for manufacturing the multilayer LTCC circuit carrier 20 of the electronic circuit modules 1, 1A, 1B, 1C, 1D according to the present invention (e.g.) Figures 2 to 4 As shown), at least one recess 14 for the corresponding SiC power semiconductor 7 is introduced in at least one original substrate layer 12 having an electrically conductive structure and / or a thermally conductive structure, wherein a plurality of original substrate layers 12 are stacked to form a... Figure 1 a) shows the original substrate stack 10. The recess 14 is larger, and particularly higher, than at least one SiC power semiconductor 7, and can be introduced into at least one original substrate layer 12, for example, by stamping. The original substrate layer 12 is preferably designed as a thin film, with pre-defined conductive and / or thermally conductive wire structures (not shown in more detail) disposed on the upper and lower sides of the thin film. During the stacking of the original substrate stack 10, at least one SiC power semiconductor is correctly positioned in the corresponding recess 14, as shown in the diagram. Figure 1 As can be seen in b), the original substrate stack 10 with the inserted SiC power semiconductor 7 is laminated under pressure and temperature, causing the individual original substrate layers 12 to "bond" and form Figure 1 c) shows the laminated original substrate stack 10A. Due to the basic structure of this multilayer LTCC circuit carrier, in the illustrated embodiment, at least one SiC power semiconductor is fully embedded in and thus protected within the laminated original substrate stack 10A. The laminated original substrate stack 10A shrinks during a pressure-supported sintering process to form the embedded SiC power semiconductor 7. Figure 1 The multilayer LTCC circuit carrier 20 shown in d). Here, the connection contacts of the SiC power semiconductor 7 are in contact with the electrically conductive and / or thermally conductive structures of the inorganic substrate layer 22 through a pressure-supported sintering process, which is generated from the original substrate layer 12 having the electrically conductive and / or thermally conductive structures through the pressure-supported sintering process.
[0024] from Figure 1 It can also be seen that the pressure-supported sintering process reduces the thickness or height of the original substrate layer 12, resulting in a substrate layer 22 that is thinner than the original substrate layer 12. Figure 1 As can also be seen in b), the height of the recess 14 introduced into at least one of the original substrate layers 12 is designed to be higher than that of the SiC power semiconductor 7, wherein the height of the recess 14 in at least one of the original substrate layers 12 is selected such that the thickness or height of the constricted recess 24 in at least one constricted substrate layer 22 corresponds to the thickness or height of the SiC power semiconductor 7, and the constricted recess 24 is filled, as from Figure 1 As can be seen in d). Furthermore, prior to stacking the original substrate layers, at least one additional recess is introduced in at least one original substrate layer 12, and at least one via 26, 27.1, 27.2 and / or at least one high-current conductor path 28A, 28B and / or at least one thermally conductive and electrically conductive insert is inserted into the additional recess as an additional electrical conductive structure, and / or at least one thermally conductive and electrically conductive thick layer structure 29 is printed into the additional recess.
[0025] from Figures 2 to 5As can be seen, the illustrated embodiment of the electronic circuit module 1 according to the present invention includes: a multilayer LTCC circuit carrier 20 composed of a structured inorganic substrate layer 22, the substrate layer having an electrically conductive structure and / or a thermally conductive structure for electrical and / or thermal conduction; at least one electronic device 5 disposed on a first side 20.1 and / or an opposite second side 20.2 of the LTCC circuit carrier 20; and at least one SiC power semiconductor 7. Here, at least one SiC power semiconductor 7 is embedded in the multilayer LTCC circuit carrier 20 and is surrounded by the multilayer LTCC circuit carrier 20 at at least three sides, wherein the connection contacts of the SiC power semiconductor 7 are in contact with the electrically conductive structure and / or thermally conductive structure of the LTCC circuit carrier 20. The multilayer LTCC circuit carrier 20 is manufactured according to the method described above.
[0026] In the illustrated embodiment, electronic circuit modules 1, 1A, 1B, 1C, and 1D are designed, for example, as power module 3, and at least one SiC power semiconductor 7 is designed as a MOSFET power switch.
[0027] from Figures 2 to 5 It can also be seen that at least one first side 7.1 (here, the upper side) of the SiC power semiconductor 7 faces the first side 20.1 (here, the upper side) of the multilayer LTCC circuit carrier 20, and at least one second side 7.2 (here, the rear side) of the SiC power semiconductor 7 faces the second side 20.2 (here, the rear side) of the multilayer LTCC circuit carrier 20. Furthermore, the strength, height, or thickness of at least one SiC power semiconductor 7 corresponds to the strength, height, or thickness of the corresponding recess 24 in at least one inorganic substrate layer 22.
[0028] from Figures 2 to 4 As can also be seen in the embodiments shown for electronic circuit modules 1, 1A, 1B, 1C, and 1D, at least one connection contact on the first side 7.1 (or upper side) of at least one SiC power semiconductor 7 is electrically contacted via vias 26 to connection contacts on the first side 20.1 (or upper side) of the multilayer LTCC circuit carrier 20. These connection contacts are electrically connected via bonding wires 9 to an electronic device 5 disposed on the first side 20.1 (or upper side) and designed as a logic circuit 5A. The logic circuit 5A is contacted with an electrically conductive structure via another bonding wire 9. Figures 2 to 4It can also be seen that an additional electronic device 5, designed as a discrete device 5B, is provided on the first side 20.1 (or the upper side) and is in contact with the corresponding electrical conduction structure. In addition, in the illustrated embodiment, the high current conductor path 28A is embedded in the multilayer LTCC circuit carrier 20 and is electrically connected to the corresponding connection contact point on the first side 20.1 (or the upper side) or the second side 20.2 (or the lower side) of the multilayer LTCC circuit carrier 20 via at least one first via 27.1.
[0029] from Figure 2 As can also be seen, the SiC power semiconductor 7 shown is flush with the second side 7.2 (or rear side) of the LTCC circuit carrier 20 via its planar metallized portion. Furthermore, in the first embodiment of the electronic circuit module 1A shown, the high-current conductor path 28A is electrically connected to corresponding contact points on the second side 20.2 (or lower side) of the multilayer LTCC circuit carrier 20 via a plurality of first vias 27.1. Additionally, the high-current conductor path 28A is electrically connected to corresponding contact points on the first side 7.1 (or upper side) of at least one SiC power semiconductor 7 via a plurality of second vias 27.2.
[0030] from Figure 3 As can also be seen, the SiC power semiconductor 7 shown is surrounded by a multilayer LTCC circuit carrier 20 on all four sides, thus being fully integrated into the LTCC circuit carrier 20. Furthermore, in the second embodiment of the electronic circuit module 1B shown, the high-current conductor path 28A is electrically connected to corresponding contact points on the second side 20.2 (or lower side) of the multilayer LTCC circuit carrier 20 via a plurality of first vias 27.1. Additionally, the high-current conductor path 28A is electrically connected to corresponding contact points on the first side 7.1 (or upper side) of at least one SiC power semiconductor 7 via a plurality of second vias 27.2. The SiC power semiconductor 7 is designed such that the second side 7.2 (or rear side) of the planar metallized portion is connected to corresponding contact points on the second side 20.2 (or rear side) of the LTCC circuit carrier 20 via a plurality of vias 26.
[0031] from Figure 4As can also be seen, the SiC power semiconductor 7 shown is surrounded by a multilayer LTCC circuit carrier 20 on three sides, wherein the second side 7.2 (or rear side) of the SiC power semiconductor 7, designed as a planar metallized portion, is in planar contact with a thermally conductive and electrically conductive printed thick layer structure 29. The thick layer structure 29 is flush-connected to the second side 20.2 (or rear side) of the multilayer LTCC circuit carrier 20. In the third embodiment of the electronic circuit module 1C shown, a high-current conductor path 28A is electrically connected to corresponding connection contacts on the second side 20.2 (or lower side) of the multilayer LTCC circuit carrier 20 via a plurality of first vias 27.1. Furthermore, the high-current conductor path 28A is electrically connected to corresponding connection contacts on at least one first side 7.1 (or upper side) of the SiC power semiconductor 7 via a plurality of second vias 27.2. In an alternative embodiment not shown, the second side 7.2 (or rear side) of the SiC power semiconductor 7 is in planar contact with a thermally conductive and electrically conductive insert, but not with the printed thick layer structure 29.
[0032] from Figure 5 As can also be seen, the SiC power semiconductor 7 shown is surrounded by a multilayer LTCC circuit carrier 20 on all four sides. The second side 7.2 (or rear side) of the SiC power semiconductor 7, designed as a planar metallized portion, contacts the contact surface 27.3 of another high-current conductor path 28B. This contact surface contacts the corresponding connection point on the first side 20.1 (or upper side) of the LTCC circuit carrier 20 via a plurality of first vias 27.1. In the third embodiment of the electronic circuit module 1C shown, the high-current conductor path 28A is electrically connected to the corresponding connection point on the second side 20.2 (or lower side) of the multilayer LTCC circuit carrier 20 via a plurality of first vias 27.1. Furthermore, the high-current conductor path 28A is electrically connected to the corresponding connection point on the first side 7.1 (or upper side) of at least one SiC power semiconductor 7 via a plurality of second vias 27.2.
[0033] Through the high pressure during the pressure-supported sintering process, a portion of the original substrate layer 12 enters the final cavity of the recess 24, such that at least one SiC power semiconductor 7 is embedded in the multilayer LTCC circuit carrier 20 in the illustrated embodiment, as... Figure 1 d) and Figures 2 to 5As can be seen, in this embedding, the electrical conduction structure and / or thermal conduction structure of at least one SiC power semiconductor 7, high-current conductor paths 28A, 28B, and vias 26, 27.1, 27.2, as well as connection contacts, are in contact with each other. The various structured inorganic substrate layers 22 of the LTCC circuit carrier 20, and the silver used for the electrical conduction structure and / or thermal conduction structure, conductor paths, and vias, are sintered at 900°C. Here, silver is also sintered with the metal contacts of at least one SiC power semiconductor 7, forming a stable electrical connection with ohmic contacts.
Claims
1. An electronic circuit module (1), comprising: A multilayer LTCC circuit carrier (20) is composed of a structured inorganic substrate layer (22) having an electrical conductive structure and / or a thermal conductive structure for electrical conduction and / or thermal conduction. At least one electronic device (5) is disposed on a first side (20.1) and / or a second side (20.2) opposite to the LTCC circuit carrier (20); and At least one SiC power semiconductor (7). Its features are, The at least one SiC power semiconductor (7) is embedded in the multilayer LTCC circuit carrier (20) and is surrounded by the multilayer LTCC circuit carrier (20) at least three sides, wherein the connection contacts of the SiC power semiconductor (7) are in contact with the electrical conduction structure and / or thermal conduction structure of the LTCC circuit carrier (20). The at least one SiC power semiconductor (7) fills the corresponding recess, which is introduced into at least one inorganic substrate layer (22).
2. The electronic circuit module (1) according to claim 1, characterized in that, The first side (7.1) of the at least one SiC power semiconductor (7) faces the first side (20.1) of the multilayer LTCC circuit carrier (20), and the second side (7.2) of the at least one SiC power semiconductor (7) faces the second side (20.2) of the multilayer LTCC circuit carrier (20).
3. The electronic circuit module (1) according to claim 1 or 2, characterized in that, At least one connection contact on the first side (7.1) or the second side (7.2) of the at least one SiC power semiconductor (7) is electrically connected via a via (26) to a connection contact on the first side (20.1) or the second side (20.2) of the multilayer LTCC circuit carrier (20), or to an electronic device (5) disposed on the first side (20.1) or the second side (20.2) of the multilayer LTCC circuit carrier (20).
4. The electronic circuit module (1) according to claim 1 or 2, characterized in that, High-current conductor paths (28A, 28B) are embedded in the multilayer LTCC circuit carrier (20) and electrically connected via at least one first via (27.1) to a corresponding connection contact on a first side (20.1) or a second side (20.2) of the multilayer LTCC circuit carrier (20).
5. The electronic circuit module (1) according to claim 4, characterized in that, The high-current conductor path (28A) is electrically connected via at least one second via (27.2) to a corresponding contact point on the first side (7.1) or the second side (7.2) of the at least one SiC power semiconductor (7).
6. The electronic circuit module (1) according to claim 4, characterized in that, The high-current conductor path (28B) is electrically connected in a planar manner to a corresponding connecting contact point on a first side (7.1) or a second side (7.2) of the at least one SiC power semiconductor (7) via a contact surface (27.3).
7. The electronic circuit module (1) according to claim 2, characterized in that, The first side (7.1) of the at least one SiC power semiconductor (7) is flush with the first side (20.1) of the multilayer LTCC circuit carrier (20), or the second side (7.2) of the at least one SiC power semiconductor (7) is flush with the second side (20.2) of the multilayer LTCC circuit carrier (20).
8. The electronic circuit module (1) according to claim 1 or 2, characterized in that, The contact points on the first side (7.1) or the second side (7.2) of the at least one SiC power semiconductor (7) are in planar contact with a thermally conductive and electrically conductive insert, or in planar contact with a thermally conductive and electrically conductive printed thick layer structure (29), wherein the insert or the thick layer structure (29) is flush connected to the first side (20.1) or the second side (20.2) of the multilayer LTCC circuit carrier (20).
9. The electronic circuit module (1) according to claim 1 or 2, characterized in that, The at least one SiC power semiconductor (7) is surrounded by the multilayer LTCC circuit carrier (20) on all four sides.
10. The electronic circuit module (1) according to claim 1 or 2, characterized in that, The at least one SiC power semiconductor (7) is designed as a MOSFET power switch.
11. A method for manufacturing a multilayer LTCC circuit carrier (20) for an electronic circuit module (1), the electronic circuit module being designed according to any one of claims 1 to 10, characterized in that, At least one recess for a corresponding SiC power semiconductor (7) is introduced in at least one original substrate layer (12) having an electrically conductive structure and / or a thermally conductive structure, wherein a plurality of original substrate layers (12) are stacked and at least one SiC power semiconductor (7) is inserted into the at least one recess, wherein the original substrate stack having the SiC power semiconductor (7) is laminated under pressure and temperature, and wherein the laminated original substrate stack is shrunk in a pressure-supported sintering process into the multilayer LTCC circuit carrier (20) having the embedded SiC power semiconductor (7), wherein the connection contacts of the SiC power semiconductor (7) are in contact with the electrically conductive structure and / or thermally conductive structure of an inorganic substrate layer (22) through the pressure-supported sintering process, the electrically conductive structure and / or thermally conductive structure being generated from the original substrate layer (12) having the electrically conductive structure and / or thermally conductive structure through the pressure-supported sintering process.
12. The method according to claim 11, characterized in that, Before stacking the original substrate layer (12), at least one additional recess is introduced into at least one original substrate layer (12), and during or after stacking, at least one via (26, 27.1, 27.2) or at least one high current conductor path track (28A, 28B) or at least one thermally conductive and electrically conductive insert is inserted into the at least one additional recess as an additional electrical conductive structure, and / or at least one thermally conductive and electrically conductive thick layer structure (29) is printed into the at least one additional recess as an additional electrical conductive structure.
13. The method according to claim 11 or 12, characterized in that, The pressure-supported sintering process reduces the thickness of the original substrate layer (12), resulting in a substrate layer (22) that is thinner than the original substrate layer (12).
14. The method according to claim 11 or 12, characterized in that, The height of the recess introduced into at least one original substrate layer (12) is designed to be higher than that of the SiC power semiconductor (7), wherein the height of the recess in the at least one original substrate layer (12) is selected such that the height of the recess in the at least one contracted substrate layer (22) is equal to the height of the SiC power semiconductor (7), and the at least one SiC power semiconductor (7) fills the corresponding contracted recess.