Full-color LED epitaxial structure

Abstract

The application provides a full-color LED epitaxial structure. Different columnar area proportions corresponding to a single unit area of a substrate are used to make the flow rate of reaction gas around each columnar different when a light-emitting layer is grown, the doping efficiency of each element in the grown light-emitting layer different, and the component proportion of each element in the grown light-emitting layer different, so that the light-emitting wavelength of the LED is different. The above process is simple, can produce a semiconductor structure for a full-color LED on a substrate, and only by adjusting the area proportion of the columnar, the component proportion of the light-emitting layer is adjusted, so that the light-emitting wavelength of the LED is adjusted, and the preparation process of the full-color LED is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a full-color LED epitaxial structure. BACKGROUND

[0002] Light-emitting diode (LED) is a kind of semiconductor light-emitting device, which is a kind of cold light source that can emit light by using the recombination of electrons and holes. The two main application fields of LED include lighting and display. In the field of display, the future development trend includes higher quality and higher definition (more number of pixels and smaller size of pixels). The key technology to realize high-definition display is to realize ultra-small light-emitting pixels, which requires smaller size full-color LED light-emitting units.

[0003] As a new generation of lighting equipment, LED has many advantages such as high brightness, low cost, long service life, small size, energy saving and environmental protection. At present, white light LED is mainly realized by the following ways: the first way is to obtain white light by exciting fluorescent powder with ultraviolet LED, which is similar to the principle of fluorescent lamp. Ultraviolet LED can produce light with longer wavelength through organic or inorganic fluorescent powder, so that visible light from blue light to red light can be obtained, and white light emission can be realized. The second way is to realize white light emission by exciting fluorescent powder with blue light. Part of the blue light is transmitted out through the fluorescent powder, and the other part is absorbed by the fluorescent powder to emit red and green light, and the combination of the three colors of light can realize white light emission. When ultraviolet or blue light excites fluorescent powder, the light is absorbed by the corresponding fluorescent powder, and the light with longer wavelength is emitted through down-conversion. According to Stokes shift, the conversion efficiency is low. Moreover, the fluorescent powder will appear light decay phenomenon with the extension of use time. Therefore, how to fully utilize the patterned substrate and develop a full-color LED epitaxial structure with low preparation cost, good color rendering and no fluorescent powder is of great significance to the further development of the industry. SUMMARY

[0004] The purpose of the present application is to provide a full-color LED epitaxial structure, which adjusts the component ratio of the light-emitting layer by adjusting the area ratio of the columnar structures on the substrate, so as to adjust the light-emitting wavelength of the LED, thereby reducing the preparation process of the full-color LED.

[0005] To achieve the above purpose, the full-color LED epitaxial structure provided by the present application comprises:

[0006] a substrate, the surface of the substrate comprises a plurality of periodically arranged unit regions, each unit region comprises n sub-unit regions, and n is a positive integer greater than or equal to 2;

[0007] a plurality of columnar structures, each columnar structure is distributed in each sub-unit region;

[0008] a light emitting layer and a semiconductor layer of a second type are sequentially formed on the upper surface of the columnar body, the columnar body comprising the semiconductor layer of the first type opposite to the conductive type of the semiconductor layer of the second type, and the semiconductor layer of the first type and the light emitting layer are in contact with each other;

[0009] wherein, for each of the unit regions, there is at least one of the columnar bodies having an area ratio different from that of the other n-1 columnar bodies, and the area ratio of the columnar body is a ratio between a horizontal cross-sectional area of the columnar body and an area of the sub-unit region corresponding to the columnar body.

[0010] Optionally, the height of the columnar body ranges from 100 nm to 400 nm.

[0011] Optionally, the area ratios of the n columnar bodies corresponding to each of the unit regions are all different.

[0012] Optionally, the columnar body only comprises the semiconductor layer of the first type, and the semiconductor layer of the first type is located between the light emitting layer and the substrate.

[0013] Optionally, the columnar body comprises a buffer layer, a nucleation layer, and the semiconductor layer of the first type.

[0014] Optionally, the substrate is a patterned substrate, and the columnar body comprises a protrusion of the patterned substrate and the semiconductor layer of the first type.

[0015] Optionally, the substrate is an N-type semiconductor substrate.

[0016] Optionally, the n sub-unit regions of the unit region have the same area, and at least one of the n columnar bodies corresponding to the n sub-unit regions has a horizontal cross-sectional area different from that of the other n-1 columnar bodies.

[0017] Optionally, the arrangement of the 2n columnar bodies corresponding to two adjacent unit regions is mirror-symmetric.

[0018] Optionally, at least one of the n sub-unit regions has an area different from that of the other n-1 sub-unit regions, and the n columnar bodies have the same horizontal cross-sectional area.

[0019] Optionally, the arrangement of the 2n sub-unit regions in two adjacent unit regions is mirror-symmetric.

[0020] Optionally, the material of the first type of semiconductor layer is a group III nitride, and / or the material of the light emitting layer is a group III nitride, and / or the material of the second type of semiconductor layer is a group III nitride.

[0021] Optionally, the light emitting layer is doped with In element, and the area ratio of the columnar structures is adjusted to adjust the component ratio of the In element in the light emitting layer grown above the columnar structures.

[0022] Compared with the prior art, the present application has the following advantages:

[0023] The area ratio of the patterned columnar structures corresponding to one unit area of the substrate is different, so that the flow rate of the reaction gas in each opening is different when the light emitting layer is grown. When the area ratio of the columnar structures is reduced, the growth rate of the light emitting layer on the upper surface of the patterned columnar structures will be faster, the doping efficiency of each element in the grown light emitting layer is different, and the component ratio of each element in the grown light emitting layer is different, so that the light emitting wavelength of the LED is different. The above process is simple, and the semiconductor structure for full-color LED can be made on one substrate, which reduces the size of the full-color LED and reduces the cost. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is a top view structural schematic diagram of a full-color LED epitaxial structure of the first embodiment of the present application;

[0025] Figure 2 is a cross-sectional structural schematic diagram of a full-color LED epitaxial structure of the first embodiment of the present application;

[0026] Figure 3 is a cross-sectional structural schematic diagram of a full-color LED epitaxial structure of the second embodiment of the present application;

[0027] Figure 4 is a cross-sectional structural schematic diagram of a full-color LED epitaxial structure of the third embodiment of the present application;

[0028] Figure 5 is a cross-sectional structural schematic diagram of a full-color LED epitaxial structure of the fourth embodiment of the present application;

[0029] Figure 6 is a top view structural schematic diagram of a full-color LED epitaxial structure of the fifth embodiment of the present application;

[0030] Figure 7 is a top view structural schematic diagram of a full-color LED epitaxial structure of the sixth embodiment of the present application;

[0031] Figure 8 is a top view structural schematic diagram of a full-color LED epitaxial structure of the seventh embodiment of the present application.

[0032] To facilitate understanding of the present invention, all reference numerals appearing in the present invention are listed below:

[0033] Substrate 10 Cell area 11

[0034] Subunit area 11a Column 12

[0035] Nucleation layer 121 Buffer layer 122

[0036] The horizontal cross-sectional area of ​​the column S2 The area of ​​the subunit region S1

[0037] First type semiconductor layer 13 Light emitting layer 14

[0038] Second type semiconductor layer 15 Light emitting structure 100 DETAILED DESCRIPTION

[0039] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0040] Figure 1 FIG. 1 is a top view of the full-color LED epitaxial structure 1 according to the first embodiment of the present invention. Figure 1 As shown, the full-color LED epitaxial structure 1 includes a substrate 10, the surface of the substrate 10 includes a plurality of periodically arranged unit areas 11, each of the unit areas 11 includes n sub-unit areas 11a, where n is a positive integer greater than or equal to 2;

[0041] In this embodiment, the full-color LED epitaxial structure 1 is used for display, and a plurality of unit areas 11 are arranged in an array. Each unit area 11 corresponds to a pixel unit area; and each sub-unit area 11 a corresponds to a sub-pixel area.

[0042] In other embodiments, the full-color LED epitaxial structure can also be used for lighting. A plurality of unit areas 11 are arranged in an array, each unit area 11 corresponds to a lighting unit area; each sub-unit area 11a corresponds to a primary color light-emitting structure area.

[0043] like Figure 1 In the embodiment shown, n is preferably 3, corresponding to forming an LED light emitting structure 100 of three primary colors: red, green, and blue. Figure 1 In the first embodiment shown, the area S1 of each sub-unit region 11 a is the same.

[0044] In this embodiment, the subunit regions 11a have the same shape and are all rectangular. In other embodiments, the shapes of the subunit regions 11a may be different, and / or the shape of the subunit regions 11a may be one of circular, triangular, hexagonal, and trapezoidal. This embodiment does not limit the distribution, shape, or area size of the subunit regions 11a.

[0045] In some embodiments, n can also be 4, corresponding to the formation of red, green, blue, and yellow four primary color LED light emitting structures.

[0046] At least one of the area proportions of the n columnar structures 12 corresponding to each unit area 11 is different from the area proportions of the other n-1 columnar structures 12, wherein the area proportion of the columnar structure 12 is the ratio between the horizontal cross-sectional area of the columnar structure 12 and the area of the sub-unit area 11a corresponding thereto.

[0047] In an embodiment, the n sub-unit areas 11a of the unit area 11 have the same area, and at least one of the horizontal cross-sectional areas of the n columnar structures 12 corresponding to the n sub-unit areas 11a is different from the horizontal cross-sectional areas of the other n-1 columnar structures 12.

[0048] In the first embodiment, as shown in Figure 1 The areas S1 of the three sub-unit areas 11a of each unit area 11 are the same, and the horizontal cross-sectional areas S2 of the columnar structures 12 distributed in each sub-unit area 11a are different, and the area proportions of the three columnar structures 12 corresponding to each unit area 11 are all different, because the light emitting layer 14 of the subsequent light emitting structure 100 is formed on the upper surface of the columnar structure 12, thereby realizing different component contents of the light emitting layer 14 of each light emitting structure 100.

[0049] Specifically, the height of the columnar structure 12 ranges from 100 nanometers to 400 nanometers, which can avoid the light emitting layer 14 of each sub-unit area 11a of a unit area 11 from overlapping, thereby avoiding the problem of color mixing.

[0050] Figure 2 A cross-sectional structure diagram of the full-color LED epitaxial structure 1 of the first embodiment of the present application is shown, which further includes a plurality of columnar structures 12, each of which is distributed in each of the sub-unit areas 11a; a light emitting layer 14 and a second type semiconductor layer 15 are sequentially formed on the upper surface of the columnar structure 12, the columnar structure 12 contains the first type semiconductor layer 13 opposite to the conductive type of the second type semiconductor layer 15, and the first type semiconductor layer 13 and the light emitting layer 14 are in contact with each other; the columnar structure 12 only contains the first type semiconductor layer 13, and the first type semiconductor layer 13 is located between the light emitting layer 14 and the substrate 10.

[0051] Figure 3FIG. 1 is a schematic diagram of a cross-sectional structure of a full-color LED epitaxial structure 1 according to a first embodiment of the present application. The full-color LED epitaxial structure 1 according to the first embodiment of the present application comprises a substrate 10, a columnar structure 12, and a second type semiconductor layer 14. The substrate 10 is a N-type semiconductor substrate. The columnar structure 12 comprises a plurality of protrusions 101 on the substrate 10, and a first type semiconductor layer 13 on the plurality of protrusions 101. The second type semiconductor layer 14 is on the columnar structure 12.

[0052] Figure 4 FIG. 2 is a schematic diagram of a cross-sectional structure of a full-color LED epitaxial structure 1 according to a second embodiment of the present application. The full-color LED epitaxial structure 1 according to the second embodiment of the present application comprises a substrate 10, a columnar structure 12, and a second type semiconductor layer 14. The substrate 10 is a N-type semiconductor substrate. The columnar structure 12 comprises a plurality of protrusions 101 on the substrate 10, a buffer layer 121 on the plurality of protrusions 101, a nucleation layer 122 on the buffer layer 121, and a first type semiconductor layer 13 on the nucleation layer 122. The second type semiconductor layer 14 is on the columnar structure 12.

[0053] Figure 5 FIG. 3 is a schematic diagram of a cross-sectional structure of a full-color LED epitaxial structure 1 according to a third embodiment of the present application. The full-color LED epitaxial structure 1 according to the third embodiment of the present application comprises a substrate 10, a columnar structure 12, and a second type semiconductor layer 14. The substrate 10 is a patterned substrate. The columnar structure 12 comprises a plurality of protrusions 101 on the substrate 10, and a first type semiconductor layer 13 on the plurality of protrusions 101. The second type semiconductor layer 14 is on the columnar structure 12.

[0054] In an embodiment, the substrate 10 is a N-type semiconductor substrate. In this case, the substrate 10 can be conductive, and can be used as an electrode of a light-emitting LED device without being peeled off.

[0055] The substrate 10 can also be a non-conductive substrate, such as a sapphire substrate. In this case, the substrate 10 needs to be peeled off after the second type semiconductor is prepared, and then an electrode of a light-emitting LED device is manufactured.

[0056] The first type semiconductor layer 13 can be a group-III nitride, and can include at least one of GaN and AlGaN.

[0057] It should be noted that in the present embodiment, a chemical element is used to represent a material, but the molar ratio of each chemical element in the material is not limited. For example, in a GaN material, Ga and N elements are included, but the molar ratio of Ga and N elements is not limited. In an AlGaN material, Al, Ga, and N elements are included, but the molar ratio of each element is not limited.

[0058] The first type can be P-type, and the P-type doping ion can be at least one of Mg ion, Zn ion, Ca ion, Sr ion, or Ba ion.

[0059] The P-type doping ion can be realized by an in-situ doping process.

[0060] The light emitting layer 14 can include at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. The light emitting layer 14 can include a well layer and a barrier layer. The well layer has a smaller band gap than the barrier layer.

[0061] The material of the light emitting layer 14 can be a GaN-based material, which can be doped with an In element, specifically, for example, InGaN, or doped with an Al element, specifically, for example, AlGaN. The band gap of InN is about 0.7 eV, which is smaller than the band gap of GaN, 3.4 eV. Thus, the more the In element is incorporated, the longer the light emitting wavelength of the light emitting layer 14. The band gap of AlN is about 6.2 eV, which is larger than the band gap of GaN, 3.4 eV. Thus, the more the Al element is incorporated, the shorter the light emitting wavelength of the light emitting layer 14.

[0062] The growth process of the GaN-based material containing the In or Al element can refer to the growth process of the aforementioned group III nitride material.

[0063] The area ratio of the columnar structures 12 is different, and thus the flow rate of the reaction gas around each columnar structure 12 is different when the light emitting layer 14 is grown on the upper surface of the columnar structure 12, and thus the incorporation rate of the In / Al element and the Ga element is different, i.e., the incorporation efficiency of the In / Al element is different, which makes the component ratio of the In / Al element in the grown light emitting layer 14 different. Specifically, the smaller the area ratio of each columnar structure 12, the faster the growth rate of the base material GaN of the light emitting layer 14, and the In element has better selectivity, and the incorporation rate of the In element is greater than that of the Ga element. Thus, the smaller the area ratio of each columnar structure 12, the higher the component content of the In element in the InGaN of the light emitting layer 14, and in addition, the smaller the area ratio of the columnar structure 12, the greater the thickness of the quantum well in the light emitting layer 14, and thus the wavelength of the light emission increases due to the quantum Stark effect. Conversely, the greater the area ratio of the columnar structure 12, the less obvious the difference between the incorporation rate of the In element and the incorporation rate of the Ga element, i.e., the lower the incorporation efficiency of the In element, and the lower the component ratio of the In element in the grown light emitting layer 14. In another embodiment, the base material GaN of the light emitting layer 14 is doped with the Al element, and the smaller the area ratio of the columnar structure 12, the faster the growth rate of the base material GaN of the light emitting layer 14 on the upper surface of the columnar structure 12, and the growth of the Al element has no selectivity, and the incorporation rate of the Al element is smaller than that of the Ga element. Thus, the smaller the area ratio of the columnar structure 12, the lower the component content of the Al element in the AlGaN of the light emitting layer 14, and thus the smaller the incorporation amount of the Al element, and the longer the light emitting wavelength of the light emitting layer 14.

[0064] In addition, the larger the area ratio of the columnar structures 12, the smaller the thickness of the grown light-emitting layer 14; the smaller the area ratio of the columnar structures 12, the greater the thickness of the grown light-emitting layer 14, and the thickness of the quantum well will also increase, and because of the quantum Stark effect, the wavelength of the light emitted will also increase.

[0065] In the embodiment, the In element is doped in the light-emitting layer 14, and the area ratio of the columnar structures 12 is adjusted to adjust the component ratio of the In element in the light-emitting layer 14 grown above the columnar structures 12.

[0066] The material of the second type of semiconductor layer 15 can be a group III nitride, and specifically can include at least one of GaN and AlGaN.

[0067] The second type can be N-type, and the N-type doping ions can be at least one of Si ions, Ge ions, Sn ions, Se ions, or Te ions.

[0068] The growth process of the N-type group III nitride material can refer to the growth process of the P-type group III nitride material described above.

[0069] In some embodiments, the first type of semiconductor layer 13 can be an N-type semiconductor layer, and the second type of semiconductor layer 15 can be a P-type semiconductor layer.

[0070] The first type of semiconductor layer 13, the light-emitting layer 14, and the second type of semiconductor layer 15 of each sub-unit region 11a form a LED structure. The LED structure of each unit region 11 forms a LED unit.

[0071] When the first type of semiconductor layer 13 and the second type of semiconductor layer 15 are respectively applied with a voltage to provide holes and electrons, the higher the component ratio of the In element in the light-emitting layer 14, the longer the wavelength of the light emitted; the lower the component ratio of the In element, the shorter the wavelength of the light emitted; the higher the component ratio of the Al element, the shorter the wavelength of the light emitted; and the lower the component ratio of the Al element, the longer the wavelength of the light emitted.

[0072] In subsequent processes, the first electrode and the second electrode can also be continuously manufactured to form a LED device; wherein the first electrode electrically leads out the first type of semiconductor layer 13, and the second electrode electrically leads out the second type of semiconductor layer 15.

[0073] Figure 6 FIG. 5 is a top view of a full-color LED epitaxial structure 1 according to a fifth embodiment of the present application. The structure of the full-color LED epitaxial structure 1 of the fifth embodiment is substantially the same as that of the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment, and the only difference is that the arrangement of the 2n columnar structures 12 of the two adjacent unit regions 11 is mirror-symmetric.

[0074] With respect toFigure 1 The mirror-symmetrical arrangement of the 2n sub-unit areas 11a in the unit area 11 has the advantage that the columnar structures 12 with similar area ratios are adjacent to each other, which can stabilize the flow rate of the reaction gas, stabilize the doping efficiency of the In / Al elements, and stabilize the component ratio of the In / Al elements in the grown light-emitting layer 14.

[0075] Figure 7 FIG. 7 is a schematic diagram of a top view of a full-color LED epitaxial structure 1 according to a sixth embodiment of the present application. The full-color LED epitaxial structure 1 according to the sixth embodiment of the present application has substantially the same structure as the full-color LED epitaxial structure 1 according to the first, second, third, and fourth embodiments of the present application, except that the sizes of the areas S1 of the sub-unit areas 11a in one unit area 11 are different, and the horizontal cross-sectional areas S2 of the columnar structures 12 distributed in the sub-unit areas 11a are the same. Thus, the columnar structures 12 have different area ratios, the component ratio of the In / Al elements in the light-emitting layer 14 is different, and the emission wavelength is different.

[0076] In one embodiment, the area of at least one of the n sub-unit areas 11a in the unit area 11 is different from the areas of the other n-1 sub-unit areas 11a, and the horizontal cross-sectional areas of the n columnar structures 12 are the same.

[0077] Figure 8 FIG. 8 is a schematic diagram of a top view of a full-color LED epitaxial structure 1 according to a seventh embodiment of the present application. The full-color LED epitaxial structure 1 according to the seventh embodiment of the present application has substantially the same structure as the full-color LED epitaxial structure 1 according to the sixth embodiment of the present application, except that the arrangement of the 2n columnar structures 12 of the two adjacent unit areas 11 is mirror-symmetrical.

[0078] In comparison with the arrangement of the 2n sub-unit areas 11a in the unit area 11, Figure 7 The mirror-symmetrical arrangement of the 2n sub-unit areas 11a in the unit area 11 has the advantage that the columnar structures 12 with similar area ratios are adjacent to each other, which can stabilize the flow rate of the reaction gas, stabilize the doping efficiency of the In / Al elements, and stabilize the component ratio of the In / Al elements in the grown light-emitting layer 14.

[0079] In one embodiment, the shapes of the columnar structures 12 are the same, and are rectangular. In other embodiments, the shapes of the columnar structures 12 can be different, and / or the shapes of the columnar structures 12 can be one of circular, triangular, hexagonal, and trapezoidal.

[0080] Although the present application has been disclosed with reference to the above embodiments, the present application is not limited to the above embodiments. Any person skilled in the art can make various modifications and changes without departing from the spirit and scope of the present application, and the scope of protection of the present application should be subject to the scope defined by the claims.

Claims

1. A full-color LED epitaxial structure, characterized in that: include: A substrate (10), wherein the surface of the substrate (10) includes a plurality of periodically arranged unit regions (11), each of the unit regions (11) includes n sub-unit regions (11a), where n is a positive integer greater than or equal to 2; A plurality of columns (12), each of the columns (12) being correspondingly distributed in each of the subunit areas (11a); A light-emitting layer (14) and a second-type semiconductor layer (15) are sequentially formed on the upper surface of the column (12), wherein the column (12) includes a first-type semiconductor layer (13) having a conductivity type opposite to that of the second-type semiconductor layer (15), and the first-type semiconductor layer (13) and the light-emitting layer (14) are in contact with each other, and the light-emitting layer (14) includes a doping element; Among the area ratios of the n columns (12) corresponding to each unit area (11), at least one column (12) has an area ratio that is different from the area ratios of the other n-1 columns (12), so as to adjust the component ratio of the doping element in the light-emitting layer (14), wherein the area ratio of the column (12) is the ratio between the horizontal cross-sectional area of ​​the column (12) and the area of ​​the sub-unit area (11a) corresponding to it.

2. The full-color LED epitaxial structure according to claim 1, characterized in that: The height of the pillars (12) ranges from 100 nanometers to 400 nanometers.

3. The full-color LED epitaxial structure according to claim 1, characterized in that: The area proportions of the n columns (12) corresponding to each unit area (11) are all different.

4. The full-color LED epitaxial structure according to claim 1, characterized in that: The column (12) only includes the first-type semiconductor layer (13), and the first-type semiconductor layer (13) is located between the light-emitting layer (14) and the substrate (10).

5. The full-color LED epitaxial structure according to claim 1, characterized in that: The column (12) comprises a buffer layer (121), a nucleation layer (122) and the first type semiconductor layer (13).

6. The full-color LED epitaxial structure according to claim 1, characterized in that: The substrate (10) is a patterned substrate, and the column (12) includes a protrusion (101) of the patterned substrate (10) and the first type semiconductor layer (13).

7. The full-color LED epitaxial structure according to claim 1, characterized in that: The substrate (10) is an N-type semiconductor substrate.

8. The full-color LED epitaxial structure according to claim 1, characterized in that: The n sub-unit areas (11a) of the unit area (11) have the same area, and among the n columns (12) corresponding to the n sub-unit areas (11a), at least one column (12) has a horizontal cross-sectional area that is different from the horizontal cross-sectional areas of the other n-1 columns (12).

9. The full-color LED epitaxial structure according to claim 7, characterized in that: The arrangement of the 2n columns (12) corresponding to two adjacent unit areas (11) is mirror-symmetrical.

10. The full-color LED epitaxial structure according to claim 1, characterized in that: Among the n sub-unit regions (11a) of the unit region (11), at least one sub-unit region (11a) has an area different from that of the other n-1 sub-unit regions (11a), and the horizontal cross-sectional areas of the n columns (12) are the same.

11. The full-color LED epitaxial structure according to claim 9, characterized in that: The arrangement of the 2n sub-unit areas (11a) in two adjacent unit areas (11) is mirror-symmetrical.

12. The full-color LED epitaxial structure according to claim 1, characterized in that: The material of the first type semiconductor layer (13) is a group III nitride, and / or the material of the light emitting layer (14) is a group III nitride, and / or the material of the second type semiconductor layer (15) is a group III nitride.

13. The full-color LED epitaxial structure according to claim 1, characterized in that: The light-emitting layer (14) is doped with an In element, and the area ratio of the column (12) is adjusted to adjust the component ratio of the In element in the light-emitting layer (14) grown above the column (12).

Images