Light-emitting diode with improved light efficiency and preparation method thereof

Abstract

The present disclosure provides a light-emitting diode (LED) with improved luminous efficiency and a method for preparing the same, belonging to the field of optoelectronic manufacturing technology. The LED comprises: a substrate, an epitaxial layer, a composite barrier layer, and a first electrode; the substrate, the epitaxial layer, and the composite barrier layer are stacked in sequence, the composite barrier layer comprising a first film layer and a second film layer, the second film layer being a transparent insulating material layer; the first film layer is located on the surface of the epitaxial layer away from the substrate, and the first film layer is a hollow structure; the second film layer is located on the surface of the first film layer away from the substrate and in the gaps in the first film layer; the first electrode is located on the surface of the composite barrier layer away from the substrate. The present disclosure can increase the light transmittance of the current blocking layer, thereby improving the luminous effect of the LED.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light emitting diode with improved light efficiency and a preparation method thereof. Background Art

[0002] Light emitting diodes (LEDs) are a highly influential new product in the optoelectronics industry. They have the characteristics of small size, long service life, rich colors, and low energy consumption. They are widely used in lighting, display screens, signal lights, backlight sources, toys and other fields.

[0003] In related technologies, light-emitting diodes typically consist of a substrate, epitaxial layer, current-blocking layer, and electrode stacked in sequence. When current flows vertically downward from the electrode, the current-blocking layer prevents the current from flowing vertically downward, forcing the circuit to expand laterally along the current-spreading layer, thereby increasing the current's ability to spread laterally.

[0004] Since the current blocking layer is usually silicon oxide, silicon oxide will absorb part of the light and affect the brightness of the light-emitting diode. Summary of the Invention

[0005] The embodiments of the present disclosure provide a light-emitting diode with improved light efficiency and a method for manufacturing the same, which can increase the light transmittance of the current blocking layer, thereby improving the light-emitting effect of the light-emitting diode. The technical solution is as follows:

[0006] An embodiment of the present disclosure provides a light-emitting diode, which includes: a substrate, an epitaxial layer, a composite barrier layer and a first electrode; the substrate, the epitaxial layer and the composite barrier layer are stacked in sequence, the composite barrier layer includes a first film layer and a second film layer, and the second film layer is a transparent insulating material layer; the first film layer is located on the surface of the epitaxial layer away from the substrate, and the first film layer is a hollow structure, the second film layer is located on the surface of the first film layer away from the substrate and in the gaps in the first film layer, and the first electrode is located on the surface of the composite barrier layer away from the substrate.

[0007] In an implementation of the embodiment of the present disclosure, the first film layer is a first aluminum layer, and the second film layer is an aluminum oxide layer.

[0008] In an implementation of the embodiment of the present disclosure, the first aluminum layer includes a plurality of aluminum blocks arranged at intervals, and the aluminum oxide layer is located on the surface of the aluminum block away from the substrate and in the gaps between the plurality of aluminum blocks.

[0009] In another implementation of the embodiment of the present disclosure, the first aluminum layer includes multiple circles of aluminum blocks, and the multiple circles of aluminum blocks are concentrically spaced apart. Each circle of aluminum blocks includes multiple aluminum blocks arranged circumferentially at intervals.

[0010] In another implementation of the embodiment of the present disclosure, the thickness of the aluminum block in a direction perpendicular to the substrate gradually increases from the center to the edge of the multiple circles of the aluminum block.

[0011] In another implementation of the embodiment of the present disclosure, the cross-sectional shape of the aluminum block in a direction parallel to the substrate is a fan-shaped ring.

[0012] In another implementation of the embodiment of the present disclosure, the aluminum blocks in two adjacent circles are alternately arranged in the circumferential direction.

[0013] In another implementation of the embodiment of the present disclosure, the composite barrier layer further includes a second film layer, which is a second aluminum layer, and the second aluminum layer is located on a surface of the second film layer away from the substrate.

[0014] In another implementation of the embodiment of the present disclosure, the light-emitting diode further includes a current spreading layer, which is located on the epitaxial layer, surrounds the composite blocking layer, and has a sidewall connected to a sidewall of the second aluminum layer.

[0015] An embodiment of the present disclosure provides a method for preparing a light-emitting diode, which includes: providing a substrate; forming an epitaxial layer and a composite barrier layer on the substrate in sequence, wherein the composite barrier layer includes a first film layer and a second film layer, and the second film layer is a transparent insulating material layer; the first film layer is located on a surface of the epitaxial layer away from the substrate, and the first film layer is a hollow structure, and the second film layer is located on a surface of the first film layer away from the substrate, and is located in a gap in the first film layer; and a first electrode is fabricated on a surface of the composite barrier layer away from the substrate.

[0016] The beneficial effects of the technical solutions provided by the embodiments of the present disclosure include at least:

[0017] The light-emitting diode provided by the embodiments of the present disclosure has a composite barrier layer disposed between the epitaxial layer and the first electrode, wherein the composite barrier layer includes a first film layer and a second film layer, wherein the first film layer has a hollow structure, and the second film layer covers the surface of the first film layer and the pores in the first film layer. Since the first aluminum layer is a hollow design, light can pass through the gaps, thereby increasing light transmittance, and the second film layer above the first film layer is a transparent insulating material layer, which can further increase the amount of light passing through the composite barrier layer, thereby effectively improving the problem of light absorption by the composite barrier layer and improving the luminous effect of the light-emitting diode; at the same time, the second film layer is also a transparent insulating material layer, so that the composite barrier layer can prevent the current from flowing vertically downward, forcing the circuit to expand horizontally along the current expansion layer, allowing the composite barrier layer to achieve the purpose of current blocking. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0019] Figure 1 is a structural schematic diagram of a light emitting diode provided by an embodiment of the present disclosure;

[0020] Figure 2 is a top view of a composite barrier layer provided by an embodiment of the present disclosure;

[0021] Figure 3 This is a flow chart of a method for preparing a light-emitting diode provided in an embodiment of the present disclosure.

[0022] The descriptions of the marks in the figure are as follows:

[0023] 10. Substrate;

[0024] 20. epitaxial layer; 21. first semiconductor layer; 22. light-emitting layer; 23. second semiconductor layer; 24. groove;

[0025] 30. Composite barrier layer; 31. First film layer; 311. Aluminum block; 32. Second film layer; 33. Second film layer;

[0026] 41. First electrode; 42. Second electrode;

[0027] 50. Current spreading layer. DETAILED DESCRIPTION

[0028] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0029] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by a person of ordinary skill in the art to which this disclosure pertains. The terms "first," "second," "third," and similar words used in the patent specification and claims of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish between different components. Similarly, terms such as "a" or "an" do not indicate a quantitative limitation, but rather indicate the presence of at least one. Terms such as "include" or "comprise" mean that the elements or objects preceding "include" or "comprises" encompass the elements or objects listed after "include" or "comprises," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," "right," "top," and "bottom" are used only to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] Figure 1 Schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 1 As shown, the light emitting diode includes: a substrate 10 , an epitaxial layer 20 , a composite barrier layer 30 and a first electrode 41 .

[0031] like Figure 1 As shown, the substrate 10, the epitaxial layer 20 and the composite barrier layer 30 are stacked in sequence, and the composite barrier layer 30 includes a first film layer 31 and a second film layer 32, and the second film layer 32 is a transparent insulating material layer; the first film layer 31 is located on the surface of the epitaxial layer 20 away from the substrate, and the first film layer 31 is a hollow structure, the second film layer 32 is located on the surface of the first film layer 31 away from the substrate 10, and is located in the gap of the first film layer 31, and the first electrode 41 is located on the surface of the composite barrier layer 30 away from the substrate 10.

[0032] The light-emitting diode provided by the embodiments of the present disclosure has a composite barrier layer disposed between the epitaxial layer and the first electrode, wherein the composite barrier layer includes a first film layer and a second film layer, wherein the first film layer has a hollow structure, and the second film layer covers the surface of the first film layer and the pores in the first film layer. Since the first aluminum layer is a hollow design, light can pass through the gaps, thereby increasing light transmittance, and the second film layer above the first film layer is a transparent insulating material layer, which can further increase the amount of light passing through the composite barrier layer, thereby effectively improving the problem of light absorption by the composite barrier layer and improving the luminous effect of the light-emitting diode; at the same time, the second film layer is also a transparent insulating material layer, so that the composite barrier layer can prevent the current from flowing vertically downward, forcing the circuit to expand horizontally along the current expansion layer, allowing the composite barrier layer to achieve the purpose of current blocking.

[0033] Optionally, the substrate 10 may be a sapphire substrate 10, a silicon substrate 10, or a silicon carbide substrate 10. The substrate 10 may be a flat substrate 10 or a patterned substrate 10.

[0034] As an example, in the embodiment of the present disclosure, the substrate 10 is a sapphire substrate 10. The sapphire substrate 10 is a commonly used substrate 10 with mature technology and low cost. Specifically, it can be a patterned sapphire substrate 10 or a sapphire flat sheet substrate 10.

[0035] Optionally, the epitaxial layer 20 may include a first semiconductor layer 21 , a light emitting layer 22 , and a second semiconductor layer 23 stacked in sequence.

[0036] One of the first semiconductor layer 21 and the second semiconductor layer 23 may be an n-type layer, and the other of the first semiconductor layer 21 and the second semiconductor layer 23 may be a p-type layer.

[0037] Exemplarily, the first semiconductor layer 21 may be an n-type GaN layer.

[0038] For example, the light emitting layer 22 may include alternately grown InGaN quantum well layers and GaN quantum barrier layers. The light emitting layer 22 may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0039] For example, the second semiconductor layer 23 may be a p-type GaN layer.

[0040] In the embodiment of the present disclosure, the composite barrier layer 30 may be located on the first semiconductor layer 21 or the second semiconductor layer 23 of the epitaxial layer 20.

[0041] In some implementations, such as Figure 1 As shown, the composite barrier layer 30 is located on the surface of the second semiconductor layer 23 , and the first electrode 41 is also located above the second semiconductor layer 23 and connected to the composite barrier layer 30 .

[0042] Alternatively, as Figure 1 As shown, the surface of the second semiconductor layer 23 has a groove 24 exposing the first semiconductor layer 21 . The light emitting diode further includes a second electrode 42 . The second electrode 42 is located in the groove 24 and connected to the first semiconductor layer 21 .

[0043] In some other implementations, the composite barrier layer 30 is located in the groove 24 and on the surface of the first semiconductor layer 21 . The first electrode 41 is also located in the groove 24 and above the first semiconductor layer 21 and connected to the composite barrier layer 30 .

[0044] Optionally, the first film layer 31 is a first aluminum layer, and the second film layer 32 is an aluminum oxide layer.

[0045] Among them, conductive metal Al is used as the first film layer, so that when a small amount of current is transmitted to the first film layer, it can also be transmitted downward through the first film layer to the epitaxial layer or to the peripheral area of ​​the composite barrier layer, thereby increasing its light-emitting area.

[0046] Since aluminum oxide is insulating and the aluminum oxide layer is light-transmissive, using an aluminum oxide layer as the second film layer can block the downward transmission of current, facilitating the lateral expansion of current; at the same time, it can also improve the transmittance of light. When the second film layer is reflected, it is beneficial to the emission of light, allowing more light to pass through the second film layer and be reflected.

[0047] Alternatively, as Figure 1 As shown, the first aluminum layer includes a plurality of aluminum blocks 311 arranged at intervals, the aluminum oxide layer is located on the surface of the aluminum block 311 away from the substrate 10 , and the aluminum oxide layer is located in the gaps between the plurality of aluminum blocks 311 .

[0048] By configuring the first aluminum layer into multiple spaced aluminum blocks 311, a hollowed-out film structure is formed, allowing light to pass through the gaps between the aluminum blocks 311, thereby increasing light transmittance. Furthermore, the aluminum oxide layer is a transparent material, and even when filling the gaps, it does not block light emission. This effectively alleviates the problem of light absorption by the composite barrier layer 30 and enhances the light-emitting diode's luminous efficiency.

[0049] Figure 2 FIG. 1 is a top view of a composite barrier layer 30 provided in an embodiment of the present disclosure. Figure 2 As shown, the first aluminum layer includes multiple circles of aluminum blocks 311, and the multiple circles of aluminum blocks 311 are concentrically spaced. Each circle of aluminum blocks 311 includes multiple aluminum blocks 311 arranged circumferentially at intervals.

[0050] In the above implementation, by setting the first aluminum layer into multiple circles of aluminum blocks 311, there is a certain gap in the circumferential direction in one circle of aluminum blocks 311. At the same time, there is also a certain gap in the radial direction in multiple circles of aluminum blocks 311, which can form larger pores to increase the amount of light transmittance.

[0051] Alternatively, as Figure 1 As shown, the thickness of the aluminum block 311 in the direction perpendicular to the substrate 10 gradually increases from the center to the edge of the multiple circles of aluminum block 311.

[0052] By setting the thickness of the aluminum block 311 at the center to be smaller, the aluminum oxide layer is thicker at the center, ensuring that the composite barrier layer 30 has good current blocking capability at the center, preventing the current from spreading vertically downward. Setting the thickness of the aluminum block 311 at the edge to be larger, the aluminum oxide layer is thinner at the edge, which helps guide the current toward the edge of the composite barrier layer 30, thereby increasing the current's ability to spread horizontally.

[0053] Alternatively, as Figure 2 As shown, the cross-section of the aluminum block 311 in a direction parallel to the substrate 10 is a sector ring. The inner and outer radii of the aluminum block 311 gradually increase from the center to the edge of the multiple rings of aluminum blocks 311. This allows aluminum blocks 311 with a larger cross-sectional area to be formed at the edge of the composite barrier layer 30, thereby facilitating support for the aluminum oxide layer.

[0054] For example, Figure 2 As shown, each circle of aluminum blocks 311 includes four aluminum blocks 311 evenly distributed in the circumferential direction. In the same aluminum block 311, the interval angle between two adjacent aluminum blocks 311 is 90 degrees.

[0055] In some other implementations, the cross-sectional shape of the aluminum block 311 in the direction parallel to the substrate 10 may also be a triangle, a rectangle, a circle, or other shapes, which is not limited in the embodiment of the present disclosure.

[0056] Alternatively, as Figure 2 As shown, the aluminum blocks 311 in two adjacent circles of aluminum blocks 311 are alternately arranged in the circumferential direction. This alternation of the aluminum blocks 311 in the circumferential direction prevents two aluminum blocks 311 from being located in the same radial direction. This effectively increases the size of the gaps in the first aluminum layer, improves light transmission, alleviates light absorption by the composite barrier layer 30, and enhances the light-emitting effect of the LED.

[0057] Alternatively, as Figure 1 As shown, the composite barrier layer 30 further includes a second film layer 33 , which is a second aluminum layer. The second aluminum layer is located on the surface of the second film layer 32 away from the substrate 10 .

[0058] By setting a second aluminum layer on the composite barrier layer 30, the second aluminum layer is connected to the first electrode 41. Since the second aluminum layer has good conductivity, this is conducive to the first electrode 41 transmitting current to the composite barrier layer 30 and allowing the current to expand laterally through the second aluminum layer.

[0059] Alternatively, as Figure 1As shown, the light emitting diode further includes a current spreading layer 50 , which is located on the epitaxial layer 20 . The current spreading layer 50 surrounds the composite barrier layer 30 , and the sidewalls of the first aluminum layer and the second aluminum layer are both connected to the sidewalls of the current spreading layer 50 .

[0060] In the related art, the current spreading layer 50 is typically stacked on the surface of the current blocking layer away from the substrate 10, and the current spreading layer 50 also extends along the sidewalls of the current blocking layer to the surface of the epitaxial layer 20. During the extension process, the current spreading layer 50 may have uneven film thickness at the corners and be prone to breakage, which affects the current spreading effect and, in turn, the light emitting effect of the LED.

[0061] In the above implementation, the current spreading layer 50 surrounding the current blocking layer is disposed directly on the epitaxial layer 20. This eliminates the need for the current spreading layer 50 to extend at corners, making it less prone to uneven film thickness and breakage, thereby improving the stability of the current spreading layer 50. Furthermore, the current spreading layer 50 is connected to the sidewalls of the first and second aluminum layers to ensure that the current on the composite blocking layer 30 can be transferred to the current spreading layer 50, thereby ensuring the current spreading effect.

[0062] Alternatively, as Figure 1 As shown, the thickness of the current spreading layer 50 is the same as that of the composite blocking layer 30 , and the first electrode 41 is located on the surfaces of the composite blocking layer 30 and the current blocking layer.

[0063] By setting the thickness of the current blocking layer to be consistent with the thickness of the composite blocking layer 30, the first electrode 41 can be simultaneously overlapped on the surface of the composite blocking layer 30 and the current blocking layer, which is beneficial for the first electrode 41 to transmit current to the current blocking layer and ensure the current expansion effect.

[0064] Alternatively, the current spreading layer 50 may be an indium tin oxide (ITO) film. ITO films have good transmittance and low resistivity. Using ITO as the current spreading layer 50 allows more light to pass through the layer, thereby ensuring the desired effect. Furthermore, due to its low resistivity, it facilitates carrier conduction and improves injection efficiency.

[0065] For example, when the current spreading layer 50 is an ITO layer, the thickness of the current spreading layer 50 may be 50 angstroms to 5000 angstroms.

[0066] Optionally, the current spreading layer 50 may be a NiAu layer. The NiAu layer has good light transmittance, which not only facilitates carrier conduction but also effectively prevents the epitaxial layer 20 from being blocked.

[0067] Exemplarily, when the current spreading layer 50 is a NiAu layer, the thickness of the current spreading layer 50 may be no greater than 20 angstroms.

[0068] Optionally, the light-emitting diode may further include a passivation layer, which is located at least on the surface of the epitaxial layer 20, the surface of the current spreading layer 50, the surface of the first electrode 41, the surface of the groove 24, and the surface of the second electrode 42. The passivation layer also has two vias on the surface of the passivation layer, respectively exposing the two electrodes. This exposes the two electrodes outside the passivation layer, facilitating electrical connection to an external power source, allowing the epitaxial layer 20 to emit light.

[0069] For example, the passivation layer may be a distributed Bragg reflector (DBR layer), which includes a plurality of periodically alternating SiO2 layers and TiO2 layers. The number of periods in the DBR layer may be between 20 and 50. For example, the number of periods in the DBR layer is 32.

[0070] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0071] In addition to its passivation function, the DBR layer is also used to reflect light emitted from the light-emitting layer to the DBR layer to the substrate, thereby improving the light output effect.

[0072] Figure 3 This is a flow chart of a method for preparing a light emitting diode provided by an embodiment of the present disclosure. Figure 3 As shown, the preparation method comprises:

[0073] S11: providing a substrate.

[0074] S12: forming an epitaxial layer and a composite barrier layer in sequence on the substrate.

[0075] Among them, the composite barrier layer includes a first film layer and a second film layer, the second film layer is a transparent insulating material layer; the first film layer is located on the surface of the epitaxial layer away from the substrate, and the first film layer is a hollow structure, and the second film layer is located on the surface of the first film layer away from the substrate, and is located in the gap of the first film layer.

[0076] S13: forming a first electrode on a surface of the composite barrier layer away from the substrate.

[0077] The light-emitting diode manufactured using this preparation method has a composite barrier layer disposed between the epitaxial layer and the first electrode, wherein the composite barrier layer comprises a first film layer and a second film layer, wherein the first film layer is a hollow structure, and the second film layer covers the surface of the first film layer and the pores of the first film layer. Since the first aluminum layer is a hollow design, light can pass through the gaps, thereby increasing light transmittance. Moreover, the second film layer above the first film layer is a transparent insulating material layer, which further increases the amount of light that passes through the composite barrier layer, thereby effectively improving the problem of light absorption by the composite barrier layer and improving the luminous effect of the light-emitting diode. At the same time, the second film layer is also a transparent insulating material layer, so that the composite barrier layer can prevent the current from flowing vertically downward, forcing the circuit to expand horizontally along the current expansion layer, allowing the composite barrier layer to achieve the purpose of current blocking.

[0078] In step S11, the substrate may be a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate may be a flat substrate or a patterned substrate.

[0079] As an example, in the embodiments of the present disclosure, the substrate is a sapphire substrate. Sapphire substrate is a commonly used substrate with mature technology and low cost. Specifically, it can be a patterned sapphire substrate or a sapphire flat sheet substrate.

[0080] In the embodiment of the present disclosure, the epitaxial layer may include a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in sequence.

[0081] One of the first semiconductor layer and the second semiconductor layer may be an n-type layer, and the other of the first semiconductor layer and the second semiconductor layer may be a p-type layer.

[0082] Exemplarily, the first semiconductor layer may be an n-type GaN layer.

[0083] For example, the light emitting layer may include alternately grown InGaN quantum well layers and GaN quantum barrier layers. The light emitting layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0084] Illustratively, the second semiconductor layer may be a p-type GaN layer.

[0085] The process of preparing the epitaxial layer and the composite barrier layer in step S12 may include the following steps:

[0086] In the first step, a first semiconductor layer, a light-emitting layer and a second semiconductor layer are sequentially grown in the light-emitting region of the substrate to form an epitaxial layer.

[0087] The first semiconductor layer may be an n-type GaN layer.

[0088] Illustratively, the thickness of the first semiconductor layer may be 1 μm to 5 μm, for example, the thickness of the first semiconductor layer is 3 μm.

[0089] For example, the doping concentration of the n-type dopant in the first semiconductor layer may be 10 18 / cm 3 to 10 19 / cm 3 For example, the doping concentration is 5×10 18 / cm 3 .

[0090] The light emitting layer may include alternately grown InGaN quantum well layers and GaN quantum barrier layers, and may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0091] Exemplarily, the thickness of the InGaN quantum well may be 2.5 nm to 3.5 nm, for example, the thickness of the InGaN quantum well is 3 nm; the thickness of the GaN quantum barrier may be 9 nm to 20 nm, for example, the thickness of the GaN quantum barrier is 15 nm.

[0092] Exemplarily, the number of InGaN quantum well layers is the same as the number of GaN quantum barrier layers. The number of InGaN quantum well layers may be 3 to 8, for example, the number of InGaN quantum well layers is 7.

[0093] The second semiconductor layer may be a p-type GaN layer.

[0094] Illustratively, the thickness of the second semiconductor layer may be 100 nm to 800 nm. For example, the thickness of the second semiconductor layer is 450 nm.

[0095] For example, the doping concentration of the p-type dopant in the second semiconductor layer may be 10 18 / cm 3 to 10 20 / cm 3 For example, the doping concentration is 10 19 / cm 3 .

[0096] In the second step, a groove is formed on the surface of the second semiconductor layer by etching to expose the first semiconductor layer.

[0097] Specifically, the method may include: forming a photoresist with a certain pattern on the second semiconductor layer using photolithography technology, then dry-etching the second semiconductor layer and the light-emitting layer not covered by the photoresist to form a groove exposing the first semiconductor layer, and then removing the photoresist.

[0098] In the third step, a first aluminum layer, an aluminum oxide layer, and a second aluminum layer are sequentially formed on the surface of the second semiconductor layer to form a composite barrier layer.

[0099] The preparation of the first aluminum layer may include: first laying an aluminum film, and then patterning the aluminum film using photolithography and etching techniques to obtain a plurality of aluminum blocks.

[0100] For example, Figure 2 As shown, the first aluminum layer includes multiple circles of aluminum blocks, each circle of aluminum blocks includes multiple aluminum blocks arranged at intervals in the circumferential direction, and the multiple circles of aluminum blocks are concentrically spaced.

[0101] For example, Figure 1 As shown, the thickness of the aluminum block in the direction perpendicular to the substrate gradually increases from the center to the edge of the multiple-ring aluminum block.

[0102] For example, Figure 2 As shown, the cross-section of the aluminum block parallel to the substrate is a sector ring. The inner and outer radii of the aluminum block gradually increase from the center to the edge of the multiple rings of aluminum blocks. This creates aluminum blocks with larger cross-sectional areas at the edge of the composite barrier layer, making it easier to support the aluminum oxide layer.

[0103] For example, Figure 2 As shown in FIG, each circle of aluminum blocks includes four aluminum blocks uniformly distributed in the circumference. In the same aluminum block, the interval angle between two adjacent aluminum blocks is 90°.

[0104] For example, Figure 2 As shown, the aluminum blocks in two adjacent circles of aluminum blocks are alternately arranged in the circumferential direction.

[0105] The fourth step is to form a current spreading layer on the second semiconductor layer.

[0106] The current spreading layer surrounds the composite barrier layer, and the side walls of the first aluminum layer and the second aluminum layer are both connected to the side walls of the current spreading layer.

[0107] For example, Figure 1 As shown, the thickness of the current spreading layer is the same as that of the composite blocking layer, and the first electrode is located on the surfaces of the composite blocking layer and the current blocking layer.

[0108] Optionally, the current spreading layer can be an indium tin oxide (ITO) film. ITO films have good transmittance and low resistivity. Using ITO as the current spreading layer allows more light to be transmitted through the layer, thereby ensuring the desired effect. Furthermore, due to its low resistivity, it facilitates carrier conduction and improves injection efficiency.

[0109] Exemplarily, when the current spreading layer is an ITO layer, the thickness of the current spreading layer may be 50 angstroms to 5000 angstroms.

[0110] Optionally, the current spreading layer may be a NiAu layer. The NiAu layer has good light transmittance, which not only facilitates carrier conduction but also effectively prevents the epitaxial layer from being blocked.

[0111] Exemplarily, when the current spreading layer is a NiAu layer, the thickness of the current spreading layer may be no greater than 20 angstroms.

[0112] After the first electrode is manufactured in step S13 , a second electrode may also be included.

[0113] The first electrode is connected to the current spreading layer, and the second electrode is located in the groove and connected to the first semiconductor layer.

[0114] Optionally, both electrodes include one or more of gold Au, aluminum Al, nickel Ni, platinum Pt, chromium Cr, and titanium Ti.

[0115] After the two electrodes are manufactured, the method may further include forming a passivation layer on the second semiconductor layer, in the groove and on the first semiconductor layer.

[0116] The passivation layer is at least located on the surface of the second semiconductor layer, in the groove, and on the surface of the first semiconductor layer. The surface of the passivation layer also has two via holes that expose the two electrodes respectively.

[0117] For example, the passivation layer may be a DBR layer, which includes a plurality of SiO2 layers and TiO2 layers periodically and alternately stacked. The number of periods in the DBR layer may be between 20 and 50. For example, the number of periods in the DBR layer is 32.

[0118] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0119] The above does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not intended to limit the present disclosure. Any technician familiar with the profession can make slight changes or modifications to equivalent embodiments with equivalent changes using the technical content disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure are still within the scope of the technical solution of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The light-emitting diode comprises: a substrate (10), an epitaxial layer (20), a composite barrier layer (30) and a first electrode (41); The substrate (10), the epitaxial layer (20) and the composite barrier layer (30) are stacked in sequence, the composite barrier layer (30) comprises a first film layer (31) and a second film layer (32), the second film layer (32) being a transparent insulating material layer; the first film layer (31) is located on a surface of the epitaxial layer (20) away from the substrate (10), and the first film layer (31) is a hollow structure; the second film layer (32) is located on a surface of the first film layer (31) away from the substrate (10) and in a gap in the first film layer (31); the first electrode (41) is located on a surface of the composite barrier layer (30) away from the substrate (10); The first film layer (31) is a first aluminum layer, the second film layer (32) is an aluminum oxide layer, the first aluminum layer comprises a plurality of aluminum blocks (311) arranged at intervals, the aluminum oxide layer is located on a surface of the aluminum block (311) away from the substrate (10), and is located in the gaps between the plurality of aluminum blocks (311).

2. The light emitting diode according to claim 1, characterized in that The first aluminum layer comprises a plurality of circles of aluminum blocks (311), the plurality of circles of aluminum blocks (311) are concentrically spaced, and each circle of aluminum blocks (311) comprises a plurality of aluminum blocks (311) spaced circumferentially.

3. The light emitting diode according to claim 2, characterized in that The thickness of the aluminum block (311) in a direction perpendicular to the substrate (10) gradually increases from the center to the edge of the multiple circles of the aluminum block (311).

4. The light emitting diode according to claim 2, characterized in that The cross-sectional shape of the aluminum block (311) in a direction parallel to the substrate (10) is a sector ring.

5. The light emitting diode according to claim 2, characterized in that The aluminum blocks (311) in two adjacent circles of the aluminum blocks (311) are alternately arranged in the circumferential direction.

6. The light emitting diode according to any one of claims 1 to 5, characterized in that: The composite barrier layer (30) further comprises a second film layer (33), wherein the second film layer (33) is a second aluminum layer, and the second aluminum layer is located on a surface of the second film layer (32) away from the substrate (10).

7. The light emitting diode according to claim 6, characterized in that The light-emitting diode further comprises a current spreading layer (50), the current spreading layer (50) being located on the epitaxial layer (20), the current spreading layer (50) surrounding the composite barrier layer (30), and the side wall of the current spreading layer (50) being connected to the side wall of the second aluminum layer.

8. A method for preparing a light emitting diode, characterized in that: The preparation method comprises: providing a substrate; An epitaxial layer and a composite barrier layer are sequentially formed on the substrate, the composite barrier layer comprising a first film layer and a second film layer, the second film layer being a transparent insulating material layer; the first film layer is located on a surface of the epitaxial layer away from the substrate, and the first film layer is a hollow structure; the second film layer is located on a surface of the first film layer away from the substrate, and is located in a gap in the first film layer; the first film layer is a first aluminum layer, and the second film layer is an aluminum oxide layer, the first aluminum layer comprising a plurality of spaced aluminum blocks, the aluminum oxide layer is located on a surface of the aluminum block away from the substrate, and is located in a gap between the plurality of aluminum blocks; A first electrode is formed on the surface of the composite barrier layer away from the substrate.

Images