Temperature detection circuit, chip and electronic device comprising the same
By employing a combination design of voltage bias module, current mirror module and output module in high-voltage integrated circuit, the problem of insufficient accuracy of temperature detection circuit is solved, accurate temperature detection is achieved under high-voltage environment, and the chip is protected from being burned out.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SG MICRO CORP
- Filing Date
- 2022-12-09
- Publication Date
- 2026-06-05
AI Technical Summary
Existing high-voltage integrated circuit temperature detection circuits are not accurate enough under high-voltage conditions and are easily affected by changes in the DC amplification factor and bias current of bipolar transistors, resulting in inaccurate chip temperature detection and even potentially burning out the chip.
The design employs a combination of a voltage bias module, a current mirror module, and an output module. By using the current mirror module to mirror and clamp the collector currents of the first and second transistors, the impact on the DC amplification factor and bias current is reduced, thereby improving detection accuracy.
The accuracy of the temperature detection circuit has been improved, ensuring that the chip can accurately detect the temperature under high pressure and avoid damage due to excessive temperature.
Smart Images
Figure CN116124311B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of integrated circuit technology, and more specifically, to a temperature detection circuit and a chip and electronic device incorporating the temperature detection circuit. Background Technology
[0002] High-voltage integrated circuit technology originated from the concept of intelligent power devices and is an indispensable technology in the field of modern power electronics. A high-voltage integrated circuit is a gate drive circuit composed of a high-voltage gate drive chip, a low-voltage gate drive chip, protection circuitry, and high-voltage power devices. The main characteristics of high-voltage integrated circuits are: built-in drive and protection circuits, making application design more convenient and system reliability higher; optimized internal circuit wiring design effectively suppresses interference; low conduction and switching losses, requiring less heat sink area; and powerful automatic protection and fault detection functions.
[0003] High-voltage integrated circuits (ICs) provide power drive capabilities while also offering interface compatibility, signal processing, logic control, detection, and protection functions. However, because they operate in extremely harsh environments, ICs generate additional power consumption under abnormal conditions such as internal short circuits or excessively high ambient temperatures. Due to packaging or integration limitations, the heat generated cannot be quickly dissipated from the chip. In the event of an abnormal situation, the internal temperature of the chip will rise rapidly. If the temperature detection on the chip is inaccurate—that is, the temperature detection output value does not match the actual value or differs significantly—the chip may malfunction due to excessive temperature, or even burn out.
[0004] like Figure 1 As shown, this is a typical temperature detection circuit in the prior art, based on a PTAT (Proportional To Absolute Temperature) circuit. In the temperature detection circuit 100, bipolar transistor Q1 and resistors R1 to R3 are used to generate a positive temperature coefficient voltage Vptat that increases with increasing temperature. Bipolar transistor Q2 and PMOS transistor M3 form a comparator circuit. DC source 101 provides bias current Idc to bipolar transistor Q2 through a current mirror formed by PMOS transistors M2 and M3. Schmitt triggers 102 and 103 amplify the comparison result between PMOS transistor M3 and bipolar transistor Q2 to finally obtain the temperature detection signal TSD.
[0005] Figure 2This diagram shows the voltage waveforms of various nodes in a prior art temperature detection circuit at different temperatures. The solid lines represent the voltage waveforms of the bandgap reference voltage VBG, the positive temperature coefficient voltage Vptat, the voltage V1 of the Vptat divider, the voltage V2 at the common node of PMOS transistor M3 and bipolar transistor Q2, and the temperature detection signal TSD during the temperature rise process. The dashed lines represent the voltage waveforms of the Vptat divider V1, the voltage V2 at the common node of PMOS transistor M3 and bipolar transistor Q2, and the temperature detection signal TSD during the temperature fall process. Figure 2 As shown, the positive temperature coefficient voltage Vptat is obtained by subtracting the emitter junction voltage of bipolar transistor Q1 from the bandgap reference voltage VBG. As the temperature rises, the positive temperature coefficient voltage Vptat gradually increases, and voltage V1 also gradually increases until bipolar transistor Q2 turns on. The current Ic2 is greater than the current mirrored by PMOS transistor M3, and voltage V2 flips to a low level (as shown by the solid line in the figure). Simultaneously, the temperature detection signal TSD also flips to a low level (as shown by the solid line in the figure), indicating that the chip is in an over-temperature state. When the temperature decreases, the positive temperature coefficient voltage Vptat gradually decreases, and voltage V1 gradually decreases until bipolar transistor Q2 turns off. The current mirrored by PMOS transistor M3 is greater than the current Ic2, and voltage V2 flips to a high level (as shown by the dashed line in the figure). Simultaneously, the temperature detection signal TSD flips to a high level (as shown by the dashed line in the figure), indicating that the chip's over-temperature state has been resolved. By adjusting the values of resistors R1 to R3, the bias current Idc, and the current mirror ratio n, the TSD parameters of the circuit (over-temperature flip threshold TSD_H, re-temperature flip threshold TSD_L, and the hysteresis range between over-temperature and re-temperature) can be adjusted.
[0006] Figure 3 This diagram shows the voltage waveforms of various nodes in a temperature detection circuit under ideal and actual conditions during the temperature rise process. The solid lines represent the bandgap reference voltage VBG, the positive temperature coefficient voltage Vptat, the ideal voltage divider V1, the voltage V2 at the common node of PMOS transistor M3 and bipolar transistor Q2, and the voltage waveform of the temperature detection signal TSD. The dashed lines represent the actual voltage divider V1, voltage V2, and voltage waveform of the temperature detection signal TSD. In the ideal case, the DC amplification factor β of the bipolar transistor is infinite, the base current Ib2 of bipolar transistor Q2 is almost negligible, and the voltage divider of the positive temperature coefficient voltage Vptat... The accuracy is higher, and the temperature comparison point is mainly affected by the process corners of the base-emitter voltage Vbe1 of the bipolar transistor Q1 and the bias current Idc. However, in reality, the DC amplification factor β of the bipolar transistor is limited, and the base current Ib2 of the bipolar transistor Q2 affects the accuracy of the voltage V1 (i.e., ).like Figure 3 As shown by the dashed line, during the temperature rise process, the base current Ib2 of the bipolar transistor Q2 causes an error in the voltage divider V1, resulting in a higher temperature comparison point TSD_h. Therefore, the temperature comparison point of the existing temperature detection circuit is affected not only by the process angle variation of the base-emitter voltage Vbe1 of the bipolar transistor Q1 and the variation of the bias current Idc, but also by the DC amplification factor of the bipolar transistor. Summary of the Invention
[0007] In view of the above problems, the purpose of this invention is to provide a temperature detection circuit and a chip and electronic device including the temperature detection circuit, which solves the problem that the temperature comparison point of the circuit is affected by the DC amplification factor and bias current changes of the bipolar transistor, and is beneficial to improving the accuracy of circuit detection.
[0008] According to a first aspect of the present invention, a temperature detection circuit is provided, comprising: a voltage bias module, a current mirror module, a second transistor, and an output module; the voltage bias module includes a first transistor, the voltage bias module being configured to generate a positive temperature coefficient voltage at a second terminal of the first transistor using the current at a first terminal of the first transistor and the current at a control terminal of the first transistor, and to provide a bias voltage to the second transistor according to the positive temperature coefficient voltage, wherein the control terminal of the first transistor is connected to a reference voltage; the second transistor has a control terminal for receiving the bias voltage and is configured to control the voltage at its first terminal according to the bias voltage; the current mirror module is configured to make the current at the first terminal of the first transistor and the current at the first terminal of the second transistor equal by mirror clamping; the output module is configured to generate a temperature detection signal based on the voltage at the first terminal of the second transistor.
[0009] Optionally, both the first transistor and the second transistor are bipolar transistors operating in the amplification region, with the control terminal of the first transistor and the second transistor being the base, the first terminal of the first transistor and the second transistor being the collector, and the second terminal of the first transistor and the second transistor being the emitter.
[0010] Optionally, when in the same state, the first transistor and the second transistor have the same DC amplification factor.
[0011] Optionally, the current mirror module includes: a third transistor, the first terminal of which is connected to a power supply voltage, the control terminal of which is short-circuited to the second terminal of which is connected to the first terminal of which is connected to the first terminal of which is connected to the first transistor; a fourth transistor, the first terminal of which is connected to the power supply voltage, the control terminal of which is connected to the control terminal of which is connected to the third transistor, and the second terminal of which is connected to the first terminal of which is connected to the second transistor; and the power supply voltage is greater than the sum of the voltage between the control terminal and the first terminal of which is the third transistor and the reference voltage of the control terminal of which is the first transistor.
[0012] Optionally, the voltage bias module further includes: a first resistor, a second resistor, and a third resistor connected sequentially between the second terminal of the first transistor and ground; wherein the common node of the first resistor and the second resistor is used to generate the bias voltage.
[0013] Optionally, the temperature detection circuit further includes: a fifth transistor, the first terminal of which is connected to the common node of the second resistor and the third resistor, the control terminal of which receives the temperature detection signal, and the second terminal of which is connected to ground.
[0014] Optionally, the reference voltage is a bandgap reference voltage generated inside the chip where the temperature detection circuit is located; or, the reference voltage is a voltage divider signal of the bandgap reference voltage generated inside the chip where the temperature detection circuit is located.
[0015] Optionally, the output module is used to shape the voltage at the first terminal of the second transistor to generate a temperature detection signal at the output terminal; the output module includes at least two cascaded Schmitt triggers.
[0016] According to a second aspect of the present invention, a chip is provided, which includes the temperature detection circuit described above.
[0017] According to a third aspect of the present invention, an electronic device is provided, including the temperature detection circuit or chip described above.
[0018] In summary, embodiments of the present invention provide a temperature detection circuit, as well as a chip and electronic device including the temperature detection circuit. The temperature detection circuit includes a voltage bias module, a current mirror module, a second transistor, and an output module. The voltage bias module generates a positive temperature coefficient voltage at the second terminal of the first transistor using the current at the first terminal of the first transistor and a reference voltage at the control terminal, and provides a bias voltage to the second transistor based on this positive temperature coefficient voltage. The second transistor controls the voltage at its first terminal based on this bias voltage. The output module generates a temperature detection signal based on the voltage at the first terminal of the second transistor.
[0019] In the temperature detection circuit of this invention, the current mirror module clamps the first transistor and the first transistor to make their first terminal currents equal, thereby ensuring that the temperature comparison point of the circuit is not affected by the DC amplification factor β of the bipolar transistor, thus improving the detection accuracy of the circuit. Furthermore, the temperature detection circuit of this invention does not require an additional bias current, so the temperature comparison point is also unaffected by bias current errors, further improving the circuit's accuracy. Attached Figure Description
[0020] The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the invention with reference to the accompanying drawings, in which:
[0021] Figure 1 This is a circuit diagram of an existing electrical temperature detection circuit.
[0022] Figure 2 This is a diagram showing the voltage waveforms of various nodes in a temperature detection circuit of the prior art at different temperatures.
[0023] Figure 3 The diagram shows the voltage waveforms of each node during the temperature rise process in the ideal and actual conditions of the temperature detection circuit in the existing technology.
[0024] Figure 4 This is a circuit diagram of a temperature detection circuit according to an embodiment of the present invention.
[0025] Figure 5 This is a circuit diagram of another temperature detection circuit according to an embodiment of the present invention. Detailed Implementation
[0026] Various embodiments of the invention will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by the same or similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale.
[0027] It should be understood that, in the following description, "circuit" refers to a conductive loop consisting of at least one element or sub-circuit connected by an electrical or electromagnetic link. When an element or circuit is said to be "connected" to another element or "connected" between two nodes, it can be directly coupled or connected to the other element, or there may be intermediate elements. The connection between elements can be physical, logical, or a combination thereof. Conversely, when an element is said to be "directly coupled to" or "directly connected" to another element, it means that there are no intermediate elements between them.
[0028] In this application, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) includes a first terminal, a second terminal, and a control terminal. When the MOSFET is in the ON state, current flows from the first terminal to the second terminal. For a PMOS transistor, the first terminal, second terminal, and control terminal are the source, drain, and gate, respectively. For an NMOS transistor, the first terminal, second terminal, and control terminal are the drain, source, and gate, respectively. A bipolar transistor includes a first terminal, a second terminal, and a control terminal. When the bipolar transistor is in the ON state, current flows from the first terminal to the second terminal. For a PNP bipolar transistor, the first terminal, second terminal, and control terminal are the emitter, collector, and base, respectively. For an NPN bipolar transistor, the first terminal, second terminal, and control terminal are the collector, emitter, and base, respectively.
[0029] The present invention will be further described below with reference to the accompanying drawings and embodiments.
[0030] Figure 4 This is a circuit diagram of a temperature detection circuit according to an embodiment of the present invention. Figure 4 As shown, the temperature detection circuit 200 of this embodiment includes a voltage bias module 210, a current mirror module 220, an NPN bipolar transistor Q2, and an output module 230. The voltage bias module 210 includes an NPN bipolar transistor Q1, which has a collector, a base, and an emitter. Its collector is connected to the first current terminal of the current mirror module 220, and its base is used to receive a reference voltage, such as the bandgap reference voltage VBG shown in the figure. In one embodiment, the bandgap reference voltage VBG is generated internally within the chip containing the temperature detection circuit 200; this is not a limitation of the present invention. The voltage bias module 210 is configured to generate a positive temperature coefficient voltage Vptat at the emitter of the bipolar transistor Q1 using the reference voltage at the base of the bipolar transistor Q1, and to provide a bias voltage V1 to the bipolar transistor Q2 based on this positive temperature coefficient voltage Vptat. For example, the positive temperature coefficient voltage Vptat = VBG - Vbe, where Vbe is the emitter-emitter voltage (i.e., base-emitter voltage) of bipolar transistor Q1.
[0031] For example, the voltage bias module 210 also includes resistors R1 to R3 connected between the emitter of the bipolar transistor Q1 and ground, which divide the positive temperature coefficient voltage Vptat to generate the bias voltage V1 at the common node of resistors R1 and R2.
[0032] Bipolar transistor Q2 also has a collector, a base, and an emitter. Its collector is connected to the second current terminal of the current mirror module 220, its base is used to receive the bias voltage V1, and its emitter is connected to ground. Bipolar transistor Q2 is configured to control the voltage V2 at its collector according to the bias voltage V1. For example, bipolar transistor Q2 is used to convert the bias voltage V1 into a current signal and compare this current signal with a current mirrored by the current mirror module 220. The comparison result is reflected in the node voltage V2 at the collector of bipolar transistor Q2.
[0033] The output module 230 has an input terminal connected to the collector of the bipolar transistor Q2. The output module 230 is used to shape the voltage V2 at the collector of the bipolar transistor Q2 to generate a temperature detection signal TSD at the output terminal.
[0034] For example, the output module 230 is composed of several triggers, such as Schmitt triggers. Figure 4 As shown, the output module 230 includes Schmitt triggers SMIT1 and SMIT2. The input terminal of Schmitt trigger SMIT1 is connected to the collector of bipolar transistor Q2, and the output terminal of Schmitt trigger SMIT1 is connected to the input terminal of Schmitt trigger SMIT2. The output terminal of Schmitt trigger SMIT2 is used to provide the temperature detection signal TSD.
[0035] The current mirror module 220 is configured to make the collector currents of bipolar transistors Q1 and Q2 equal through mirror clamping. For example, the current mirror module 220 is constructed using PMOS transistors M2 and M3. The sources of PMOS transistors M2 and M3 are connected to the power supply voltage VCC, and the gates of PMOS transistors M2 and M3 are shorted to the drain of PMOS transistor M2. The drain of PMOS transistor M2 serves as the first current terminal of the current mirror module 220 and is connected to the collector of bipolar transistor Q1. The drain of PMOS transistor M3 serves as the second current terminal of the current mirror module 220 and is connected to the collector of bipolar transistor Q2. In this design, PMOS transistors M2 and M3 are of equal size, therefore the ratio of the current mirror module 220 is 1:1. As the temperature rises, the collector currents Ic1 and Ic2 of bipolar transistors Q1 and Q2 also increase. The mirror clamping effect of the current mirror module 220 ensures that the collector currents of bipolar transistors Q1 and Q2 are equal, i.e., Ic1 = Ic2. Therefore, the current, temperature, and process angle operating states of bipolar transistors Q1 and Q2 are identical. When under these identical conditions, the DC amplification factor β of bipolar transistors Q1 and Q2 is the same. It should be noted that this "identical" is not strictly equal; in practice, their DC amplification factors β are very close. This allows the base currents of bipolar transistors Q1 and Q2 to be equal, i.e., Ib1 = Ib2. This means that the base current Ib1 of bipolar transistor Q1 can supplement the base current Ib2 of bipolar transistor Q2. As a result, the temperature comparison point of the circuit is not affected by the DC amplification factor β of the bipolar transistor. The error between the positive temperature coefficient voltage Vptat and the bias voltage V1 is only affected by the process angle variation of the base-emitter voltage Vbe of the bipolar transistor, which significantly improves the detection accuracy of the circuit.
[0036] Furthermore, the temperature detection circuit 200 in this embodiment also includes an NMOS transistor M1. The drain of the NMOS transistor M1 is connected to the common node of resistors R2 and R3, the gate is used to receive the temperature detection signal TSD, and the source is connected to ground. The NMOS transistor M1 is used to provide a hysteresis range in the temperature detection circuit 200 to prevent the circuit output from constantly switching when the chip temperature changes back and forth near the temperature comparison point.
[0037] Figure 5 This is a circuit diagram of another temperature detection circuit according to an embodiment of the present invention. Figure 5 The temperature detection circuit 300 shown is... Figure 4 The only difference in the temperature detection circuit 200 shown is the voltage divider circuit composed of resistors R4 and R5. Apart from this, the voltage bias module 310, current mirror module 320, and output module 330 in the temperature detection circuit 300 are identical to those in the other circuits. Figure 4 The structure and function shown are the same, so they will not be described again here.
[0038] exist Figure 4 In the temperature detection circuit 200 shown, both bipolar transistors Q1 and Q2 are required to operate in the amplification region. Therefore, the power supply voltage VCC must be greater than VBG + Vgs2, where Vgs2 is the gate-source voltage of PMOS transistor M2, and VBG is the bandgap reference voltage applied to the base of bipolar transistor Q1. In a slow corner PMOS process at a temperature of -40°C, the maximum gate-source voltage Vgs2 of PMOS transistor M2 is approximately 0.5V. That is, the minimum operating voltage of this circuit is approximately 1.7V. If the power supply voltage VCC is lower than this 1.7V (for example, the power supply voltage VCC is 1.4V), Figure 4 The temperature detection circuit 200 in the middle will not work properly.
[0039] To address this issue, in some embodiments, such as Figure 5 As shown, the temperature detection circuit 300 also includes a voltage divider circuit composed of resistors R4 and R5. Resistors R4 and R5 are used to divide the bandgap reference voltage VBG, and the resulting voltage is provided as a reference voltage to the base of bipolar transistor Q1. The base voltage of bipolar transistor Q1 is approximately 0.9V, and the minimum operating voltage of this structure can be reduced to 1.4V. Therefore, this embodiment can ensure that bipolar transistors Q1 and Q2 still operate in the amplification region when the power supply voltage VCC is below 1.7V, allowing the circuit to function normally.
[0040] Accordingly, this embodiment of the invention also provides a chip, which can be an integrated circuit chip such as a power management chip or a microprocessor chip. The chip further includes a temperature detection circuit 300 as described in the above embodiment. This temperature detection circuit detects the internal temperature of the chip, thereby generating an accurate temperature detection signal when the internal temperature of the chip is too high. This allows the circuit system to shut down corresponding circuits based on the detection signal to reduce the chip temperature and protect the chip from burnout.
[0041] Accordingly, embodiments of the present invention also provide an electronic device, which can be a portable electronic product such as a cellular phone, tablet, or personal laptop. The electronic device further includes the temperature detection circuit described above or an integrated circuit chip containing the temperature detection circuit.
[0042] In summary, embodiments of the present invention provide a temperature detection circuit, as well as a chip and electronic device including the temperature detection circuit. The temperature detection circuit includes a voltage bias module, a current mirror module, a second transistor, and an output module. The voltage bias module generates a positive temperature coefficient voltage at the second terminal of the first transistor using the current at the first terminal of the first transistor and a reference voltage at the control terminal, and provides a bias voltage to the second transistor based on this positive temperature coefficient voltage. The second transistor controls the voltage at its first terminal based on this bias voltage. The output module generates a temperature detection signal based on the voltage at the first terminal of the second transistor.
[0043] In the temperature detection circuit of this invention, the current mirror module clamps the first transistor and the first transistor to make their first terminal currents equal, thereby ensuring that the temperature comparison point of the circuit is not affected by the DC amplification factor β of the bipolar transistor, thus improving the detection accuracy of the circuit. Furthermore, the temperature detection circuit of this invention does not require an additional bias current, so the temperature comparison point is also unaffected by bias current errors, further improving the circuit's accuracy.
[0044] It should be noted that although devices are described herein as N-channel or P-channel devices, or N-type or P-type doped regions, those skilled in the art will understand that complementary devices are also possible according to the present invention. Those skilled in the art will understand that conductivity type refers to the mechanism by which conductivity occurs, such as conduction through holes or electrons; therefore, conductivity type relates to doping type, such as P-type or N-type, rather than doping concentration. Those skilled in the art will understand that the terms “during,” “when,” and “when…” used herein in relation to circuit operation are not strict terms indicating an action that occurs immediately at the start of a startup action, but rather that there may be one or more small but reasonable delays between the startup action and the reaction action initiated by it, such as various propagation delays. The terms “approximately” or “substantially” used herein mean that an element value has a parameter expected to be close to the declared value or location. However, as is well known in the art, there are always small deviations that make it difficult for the value or location to be strictly the declared value. It has been properly determined in the art that a deviation of at least 10 percent (10%) (or at least 20 percent (20%) for semiconductor doping concentration) is a reasonable deviation from the described accurate ideal target. When used in conjunction with signal states, the actual voltage value or logic state of the signal (e.g., "1" or "0") depends on whether positive or negative logic is used.
[0045] Furthermore, it should be noted that in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0046] As described above, these embodiments of the present invention do not exhaustively describe all details, nor do they limit the invention to specific embodiments. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to effectively utilize the invention and its modifications. The scope of protection of this invention should be determined by the scope defined in the claims of this invention.
Claims
1. A temperature detection circuit, comprising: Voltage bias module, current mirror module, second transistor, and output module; The voltage bias module includes a first transistor, and the voltage bias module is configured to generate a positive temperature coefficient voltage at a second terminal of the first transistor using the current at a first terminal of the first transistor and the current at a control terminal of the first transistor, and to provide a bias voltage to the second transistor according to the positive temperature coefficient voltage, wherein the control terminal of the first transistor is connected to a reference voltage. The second transistor has a control terminal that receives the bias voltage and is configured to control the voltage of its first terminal according to the bias voltage; The current mirror module is configured to make the current at the first terminal of the first transistor and the current at the first terminal of the second transistor equal through mirror clamping. The output module is configured to generate a temperature detection signal based on the voltage at the first terminal of the second transistor. The current mirror module includes: The third transistor has a first terminal connected to the power supply voltage, a control terminal shorted to the second terminal, and a second terminal connected to the first terminal of the first transistor. The fourth transistor has its first terminal connected to the power supply voltage, its control terminal connected to the control terminal of the third transistor, and its second terminal connected to the first terminal of the second transistor. Furthermore, the power supply voltage is greater than the sum of the voltage between the control terminal and the first terminal of the third transistor and the reference voltage of the control terminal of the first transistor. The voltage biasing module further includes: A first resistor, a second resistor, and a third resistor are connected sequentially between the second terminal of the first transistor and ground; The common node of the first resistor and the second resistor is used to generate the bias voltage. The temperature detection circuit also includes: The fifth transistor has a first terminal connected to the common node of the second and third resistors, a control terminal receiving the temperature detection signal, and a second terminal connected to ground.
2. The temperature detection circuit according to claim 1, wherein, Both the first transistor and the second transistor are bipolar transistors operating in the amplification region. The control terminal of the first transistor and the second transistor is the base, the first terminal of the first transistor and the second transistor is the collector, and the second terminal of the first transistor and the second transistor is the emitter.
3. The temperature detection circuit according to claim 2, wherein, When in the same state, the first transistor and the second transistor have the same DC amplification factor.
4. The temperature detection circuit according to any one of claims 1-3, wherein, The reference voltage is the bandgap reference voltage generated inside the chip where the temperature detection circuit is located. Alternatively, the reference voltage may be a voltage divider signal of the bandgap reference voltage generated inside the chip where the temperature detection circuit is located.
5. The temperature detection circuit according to any one of claims 1-3, wherein, The output module is used to shape the voltage at the first terminal of the second transistor to generate a temperature detection signal at the output terminal. The output module includes at least two cascaded Schmitt triggers.
6. A chip comprising the temperature detection circuit according to any one of claims 1-5.
7. An electronic device comprising the temperature detection circuit according to any one of claims 1-5 or the chip according to claim 6.