Ion trap device

Abstract

The application discloses an ion trap device, which comprises upper and lower PCB plates arranged in parallel, wherein the middle area of the upper PCB plate is hollowed out to form a long and narrow first area, the two sides of the first area are respectively an upper direct-current electrode plate and an upper alternating-current electrode plate, and the upper direct-current electrode plate is divided to form a plurality of direct-current electrode plates arranged at intervals; the middle area of the lower PCB plate is hollowed out to form a long and narrow second area, the two sides of the second area are respectively a lower direct-current electrode plate and a lower alternating-current electrode plate, wherein the lower direct-current electrode plate is divided to form a plurality of direct-current electrode plates arranged at intervals; the first area and the second area are communicated to form a particle trapping area of the ion trap device; end electrodes are arranged at the two ends of the particle trapping area of the ion trap device, and the end electrodes are parallel to the upper and lower PCB plates. The ion trap device realizes the control of the movement of a single particle.

Description

Technical Field

[0001] This application relates to the field of quantum computing technology, specifically to the field of ion trap quantum computer technology, and particularly to ion trap devices. Background Technology

[0002] As ion traps are a major technological approach in quantum computing, the research on auxiliary technologies and tools has become essential. In experiments simulating the trapped state and electric field morphology of ions in ion traps, devices for trapping macroscopic particles (such as SiC microparticles) have been developed to assist in the study of ion trapping, in order to intuitively observe the arrangement of ion chains and the effect of changing the electric field on ion motion.

[0003] Existing ion trap devices can simulate the trapping of particles, and some can even control the motion of multiple particles as a whole, such as the overall displacement of multiple particles. However, existing ion trap devices cannot control the motion of individual particles, which is a prerequisite for studying ion electric field compensation and ion transport. Summary of the Invention

[0004] In view of the technical problems existing in the prior art, this application proposes an ion trap device that can solve at least one technical problem.

[0005] The ion trap device proposed in this application includes an upper PCB board and a lower PCB board arranged in parallel, wherein...

[0006] The middle area of ​​the upper PCB board is hollowed out to form a narrow and elongated first area. The two sides of the first area are an upper DC electrode board and an upper AC electrode board, respectively. The upper DC electrode board is divided into multiple DC electrodes arranged at intervals.

[0007] The middle area of ​​the lower PCB board is hollowed out to form a narrow second area. The two sides of the second area are the lower DC electrode board and the lower AC electrode board, respectively. The lower DC electrode board is divided into multiple DC electrodes arranged at intervals.

[0008] The lower DC electrode plate is located below the upper AC electrode plate, and the lower AC electrode plate is located below the upper DC electrode plate. The first region and the second region are connected to form the particle trapping region of the ion trap device. End electrodes are provided at both ends of the particle trapping region of the ion trap device, and the end electrodes are parallel to the upper PCB board and the lower PCB board.

[0009] Optionally, the number of intervals formed by the plurality of DC electrodes is the same as the number of particles to be trapped.

[0010] Optionally, the plurality of intervals formed by the plurality of direct current electrodes have the same width, and the width of the plurality of intervals is 1-3 mm.

[0011] Optionally, the upper alternating current electrode plate and the lower alternating current electrode plate have an area greater than that of a single direct current electrode.

[0012] Optionally, the end electrode is located at a height between the upper PCB plate and the lower PCB plate, and the projection of the end electrode does not overlap the projections of the upper PCB plate and the lower PCB plate.

[0013] Optionally, the end electrode is a PCB plate, and the width of the end electrode is 6-8 mm.

[0014] Optionally, the plurality of direct current electrodes are all rectangular plates of the same size, and the width of the rectangular plate is 6-8 mm.

[0015] Optionally, the number of the plurality of direct current electrodes is 6-10.

[0016] Optionally, the width of the upper alternating current electrode plate and / or the lower alternating current electrode plate is 7-9 mm.

[0017] Optionally, the ion trap device provided in the application further comprises a direct digital frequency synthesizer (DDS) alternating signal source and a direct current voltage source, wherein the DDS alternating signal source is electrically connected to the upper alternating current electrode plate and the lower alternating current electrode plate, respectively, and the direct current voltage source is electrically connected to the upper direct current electrode plate and the lower direct current electrode plate, respectively.

[0018] Optionally, the ion trap device provided in the application further comprises a charge-coupled device (CCD) camera and a laser light source, wherein the lens of the CCD camera and the laser light source are both directed towards the micro-particle trapping area, the laser light source is used to illuminate the micro-particles, and the CCD camera is used to take pictures of the micro-particle trapping.

[0019] The ion trap device provided in the embodiments of the application uses a PCB plate as an electrode plate in the ion trap, divides the direct current electrode plate into a plurality of spaced direct current electrodes, and sets end electrodes at both ends of the micro-particle trapping area, which not only enables the trapping of multiple micro-particles, but also enables the adjustment of the number of trapped micro-particles and the improvement of the uniformity of the ion trap in trapping macro-particles. Through the reasonable setting of the PCB plate in the ion trap, a multi-electrode electric field environment can be simulated, thereby enabling the control of the movement of a single micro-particle and providing a basis for the research on ion electric field compensation and ion transport. BRIEF DESCRIPTION OF DRAWINGS

[0020] In the following, the preferred embodiments of the application will be further described in detail with reference to the accompanying drawings, in which:

[0021] Figure 1 is a structural diagram of a linear quadrupole device for trapping macroscopic particles.

[0022] Figure 2 is a structural diagram of an ion trap device according to an embodiment of the present application.

[0023] Figure 3 is a structural diagram of a control system for an ion trap device according to an embodiment of the present application.

[0024] Figure 4 is a diagram illustrating an imaging process for an ion trap device according to an embodiment of the present application. DETAILED DESCRIPTION

[0025] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application.

[0026] In the following detailed description, reference can be made to the accompanying drawings that form a part of the present application and are used to illustrate specific embodiments of the present application. In the drawings, like numerals refer to like components throughout the various figures. The various specific embodiments of the present application are described in sufficient detail to enable one skilled in the relevant knowledge and technology to implement the technical solutions of the present application. It should be understood that other embodiments or structural, logical or electrical changes can also be made to the embodiments of the present application.

[0027] Figure 1 is a structural diagram of a linear quadrupole device for trapping macroscopic particles, which can be used to trap SiC particles. The linear quadrupole trap is in the form of a Paul trap, as shown in Figure 1 , in which alternating voltages are applied to two of the quadrupoles, and direct voltages are applied to the other two quadrupoles, so as to form a relatively balanced electric field in the center of the trap. After the SiC particles are charged by a surface ionization method, they are injected into the center of the trap, so as to achieve the trapping of the SiC particles in the quadrupole trap. However, such a quadrupole device cannot accurately control the number of particles trapped in the trap.

[0028] Figure 2 is a structural diagram of an ion trap device according to an embodiment of the present application, as shown in Figure 2 , the ion trap device comprises an upper PCB plate and a lower PCB plate arranged in parallel, wherein,

[0029] The middle part of the upper PCB is hollowed to form a first area in a long and narrow shape, and the two sides of the first area are an upper DC electrode plate 201 and an upper AC electrode plate 202, wherein the upper DC electrode plate 201 is divided to form a plurality of DC electrodes 201-1 arranged at intervals.

[0030] The middle part of the lower PCB is hollowed to form a second area in a long and narrow shape, and the two sides of the second area are a lower DC electrode plate 203 and a lower AC electrode plate 204, wherein the lower DC electrode plate 203 is divided to form a plurality of DC electrodes 203-1 arranged at intervals.

[0031] The lower DC electrode plate 203 is located below the upper AC electrode plate 202, the lower AC electrode plate 204 is located below the upper DC electrode plate 201, the first area and the second area are communicated to form a particle trapping area of the ion trap device, and end electrodes 205 are arranged at both ends of the particle trapping area of the ion trap device and are parallel to the upper PCB and the lower PCB.

[0032] According to the embodiments of the present application, the ion trap device comprises an upper PCB, a lower PCB, and an intermediate end electrode. The middle part of the upper PCB is hollowed to form a first area, the middle part of the lower PCB is hollowed to form a second area, the first area and the second area are communicated to form a particle trapping area, the end electrode is arranged at both ends of the trapping area, and the end electrode is parallel to the upper PCB and the lower PCB. The upper PCB comprises an upper DC electrode plate 201 and an upper AC electrode plate 202, the lower PCB comprises a lower DC electrode plate 203 and a lower AC electrode plate 204, the lower AC electrode plate 204 is located below the upper DC electrode plate 201, and the lower DC electrode plate 203 is located below the upper AC electrode plate 202.

[0033] The area and shape of the upper AC circuit plate are the same as those of the lower AC circuit plate, and the area and shape of the upper DC circuit plate are the same as those of the lower DC circuit plate, which can be regarded as the upper PCB and the lower PCB being center-symmetric.

[0034] The upper DC electrode plate 201 and the lower DC electrode plate 203 are divided to form a plurality of DC electrodes 201-1 and DC electrodes 203-1 arranged at intervals, wherein the upper AC electrode plate 202 and the lower AC electrode plate 204 receive an AC voltage for trapping particles, so that the particles stably exist in the trapping area; the upper DC electrode plate 201 and the lower DC electrode plate 203 receive a DC voltage for making the particles in the trapping area move in a directional manner; and the end electrode receives a DC voltage for changing the spacing of the particles in the trapping area, so as to realize uniform arrangement of the particles in the trapping area.

[0035] That is, the ion trap device provided by the present application can change the spacing of the microparticles in the axial direction by forming an axial electric field through the end electrodes, thereby achieving uniform arrangement of the microparticles in the trapping region; the directional motion of the microparticles can be achieved by changing the electric field pattern in the trapping region through the plurality of DC electrodes 201-1 and DC electrodes 203-1 arranged at intervals; and the relatively stable existence of the microparticles can be achieved by forming an alternating electric field through the AC electrode plates and forming a saddle point in the alternating electric field, because the microparticles at the saddle point are in a state of force balance in all directions.

[0036] In some embodiments of the present application, the number of intervals formed by the plurality of DC electrodes 201-1 (DC electrodes 203-1) is the same as the number of microparticles to be trapped. That is, when the number of microparticles to be trapped needs to be increased, the number of intervals formed by the DC electrodes 201-1 (DC electrodes 203-1) can be increased to increase the number of trapped microparticles. For example, the upper DC electrode plate 201 and the lower DC electrode plate 203 are each provided with 8 DC electrodes 201-1, forming 7 intervals, so that 7 microparticles can be trapped.

[0037] In some embodiments of the present application, the widths of the plurality of intervals formed by the plurality of DC electrodes 201-1 (DC electrodes 203-1) are the same, and the widths of the plurality of intervals are 1-3 mm. In embodiments of the present application, the widths of the plurality of intervals formed by the plurality of DC electrodes 201-1 (DC electrodes 203-1) are 2 mm.

[0038] In some embodiments of the present application, the areas of the upper AC electrode plate 202 and the lower AC electrode plate 204 are each greater than the area of a single DC electrode 201-1 (DC electrode 203-1).

[0039] In some embodiments of the present application, the height of the end electrode is located between the upper PCB plate and the lower PCB plate, and the projection of the end electrode does not overlap the projections of the upper PCB plate and the lower PCB plate. That is, the end electrode is not located directly below the upper PCB plate and directly above the lower PCB plate.

[0040] In some embodiments of the present application, the end electrode is a PCB plate, and the width of the end electrode is 6-8 mm. The width of the end electrode is not required and can be determined according to the actual situation.

[0041] In some embodiments of the present application, the plurality of DC electrodes 201-1 (DC electrodes 203-1) are each a rectangular plate of the same size, and the width of the rectangular plate is 6-8 mm. The length of the rectangular plate can be reasonably designed according to the size of the ion trap.

[0042] In some embodiments of the present application, the number of the plurality of direct current electrodes 201-1 (direct current electrodes 203-1) is 6-10.

[0043] In some embodiments of the present application, the width of the upper alternating current electrode plate 202 and / or the lower alternating current electrode plate 204 is 7-9 mm.

[0044] In some embodiments of the present application, the ion trap device provided by the present application further comprises a direct digital frequency synthesizer (DDS) alternating signal source and a direct current voltage source, wherein the DDS alternating signal source is electrically connected with the upper alternating current electrode plate 202 and the lower alternating current electrode plate 204 respectively, and the direct current voltage source is electrically connected with the upper direct current electrode plate 201 and the lower direct current electrode plate 203 respectively. That is, the DDS alternating signal source provides alternating voltage for the upper alternating current electrode plate 202 and the lower alternating current electrode plate 204, and the direct current voltage source provides direct current voltage for the upper direct current electrode plate 201 and the lower direct current electrode plate 203, so as to realize the trapping of the microparticles in the ion trap.

[0045] In some embodiments of the present application, the ion trap device provided by the present application further comprises a charge coupled device (CCD) camera and a laser light source, the lens of the CCD camera and the laser light source are both directed towards the microparticle trapping area, the laser light source is used to illuminate the microparticles, and the CCD camera is used to shoot the microparticle trapping picture. In this way, the microparticle trapping picture in the ion trap can be observed on the host computer.

[0046] The ion trap device provided by the present application improves the uniformity of the trapped macroscopic particles in the ion trap, maintains the stability of the potential well depth and the trapping. Moreover, through the reasonable arrangement of the PCB board in the ion trap, a multi-electrode electric field environment can be simulated, which adds a new direction for the research of the ion trap. In addition, the device can simulate and control the motion of a single particle, which lays a foundation for the exploration of electrode control.

[0047] The structural features and technical advantages of the ion trap device of the embodiments of the present application are described above through a plurality of embodiments. The operation process of the ion trap device of the embodiments of the present application is described below through specific examples.

[0048] As an example, in the ion trap device of the embodiment of the present application, the upper layer PCB is provided with the upper layer DC electrode plate 201 and the upper layer AC electrode plate 202. The upper layer AC electrode plate 202 is in the shape of a rectangle, the width of which is 8 mm and the length of which is 72 mm. The upper layer DC electrode plate 201 includes eight rectangular DC electrodes 201-1, the width of each of which is 7 mm and the length of which is 8 mm. The eight rectangular DC electrodes 201-1 are arranged at intervals, forming seven intervals with the same width, and the interval distance of the seven intervals is 2 mm. The lower layer PCB is provided with the lower layer DC electrode plate 203 and the lower layer AC electrode plate 204. The shape and size of the lower layer AC electrode plate 204 are the same as those of the upper layer AC electrode plate 204. The lower layer DC electrode plate 203 also includes eight rectangular DC electrodes 203-1, the size of each of which is the same as that of the upper layer DC electrode plate 201-1. The eight rectangular DC electrodes 203-1 also form seven intervals with the same width, and the interval distance of the intervals formed by the eight DC electrodes 201-1 and the eight DC electrodes 203-1 is the same. The width of the PCB plate of the end electrode is 7 mm. The lower layer DC electrode plate 203 is located below the upper layer AC electrode plate 202, and the lower layer AC electrode plate 204 is located below the upper layer DC electrode plate 201. The vertical distance between the upper layer PCB plate and the lower layer PCB is 4 mm. The PCB plate of the end electrode is located between the upper layer PCB plate and the lower layer PCB and is parallel to the upper layer PCB and the lower layer PCB.

[0049] The materials of the DC electrodes, the AC electrodes and the end electrodes need to meet the characteristics of high conductivity, corrosion resistance, oxidation resistance, smooth surface and non-magnetic. The PCB plate made of pure copper with gold plating process, with appropriate low radio frequency loss and compatible with ultra-high vacuum environment, is a relatively ideal choice. At the same time, the PCB manufacturing process needs to reach 100 μm to meet the requirements of the experiment.

[0050] Figure 3 The principle diagram of the control system for the ion trap device of the embodiment of the present application is schematically shown, Figure 4 The principle diagram of the imaging process for the ion trap device of the embodiment of the present application is shown. The imaging process of the ion trap device is combined with Figure 3 and Figure 4As shown, the MCU control unit controls the DDS alternating signal source and the direct current voltage source to generate alternating voltage and direct current voltage required by the electrode plate in the ion trap device respectively. The alternating signal generated by the DDS signal source is amplified in power by the signal power amplifier and then transmitted to the transformer. The alternating signal is amplified in voltage by the transformer and then transmitted to the alternating electrode in the ion trap device. The MCU control unit controls the direct current voltage source to output direct current voltage, and the adjustable control circuit adjusts the direct current voltage. After the switching switch, the direct current voltage is transmitted to the direct current electrode and the end electrode in the ion trap device. The MCU control unit controls the laser to irradiate the ions in the ion trap, and the CCD camera captures the confinement picture of the particles in the ion trap. Moreover, the MCU control unit can upload the particle confinement picture captured by the CCD camera to the upper computer, thereby realizing observation.

[0051] In summary, the ion trap device proposed in the present application solves the problems of being unable to control the motion of a single particle in the ion trap and simulating a segmented electric field. Moreover, the uniformity of the trapped macro-particles in the ion trap is improved, and the stability of the potential well depth and the trapping is maintained.

[0052] The above embodiments are only used to illustrate the present application and are not intended to limit the present application. Those skilled in the art can make various changes and modifications without departing from the scope of the present application. Therefore, all equivalent technical solutions shall belong to the scope disclosed by the present application.

Claims

1. An ion trap device, characterized in that, This includes an upper PCB board and a lower PCB board arranged in parallel, wherein, The middle area of ​​the upper PCB board is hollowed out to form a narrow and elongated first area. The two sides of the first area are an upper DC electrode board and an upper AC electrode board, respectively. The upper DC electrode board is divided into multiple DC electrodes arranged at intervals. The middle area of ​​the lower PCB board is hollowed out to form a narrow second area. The two sides of the second area are the lower DC electrode board and the lower AC electrode board, respectively. The lower DC electrode board is divided into multiple DC electrodes arranged at intervals. The lower DC electrode plate is located below the upper AC electrode plate, and the lower AC electrode plate is located below the upper DC electrode plate. The first region and the second region are connected to form the particle trapping region of the ion trap device. End electrodes are provided at both ends of the particle trapping region of the ion trap device, and the end electrodes are parallel to the upper PCB board and the lower PCB board. The multiple intervals formed by the multiple DC electrodes have the same width, and the number of intervals formed by the multiple DC electrodes is the same as the number of particles to be trapped.

2. The ion trap device according to claim 1, characterized in that, The width of each of the multiple intervals is 1-3mm.

3. The ion trap device according to claim 1, characterized in that, The areas of both the upper AC electrode plate and the lower AC electrode plate are larger than the area of ​​a single DC electrode.

4. The ion trap device according to claim 1, characterized in that, The height of the terminal electrode is located between the upper PCB board and the lower PCB board, and the projection of the terminal electrode does not overlap with the projections of the upper PCB board and the lower PCB board.

5. The ion trap device according to claim 4, characterized in that, The end electrode is a PCB board, and the width of the end electrode is 6-8mm.

6. The ion trap device according to claim 1, characterized in that, The plurality of DC electrodes are all rectangular plates of the same size, and the width of the rectangular plates is 6-8 mm.

7. The ion trap device according to claim 1, characterized in that, The number of the plurality of DC electrodes is 6-10.

8. The ion trap device according to claim 1, characterized in that, The width of the upper AC electrode plate and / or the lower AC electrode plate is 7-9 mm.

9. The ion trap device according to claim 1, characterized in that, It also includes a direct digital frequency synthesizer (DDS) alternating signal source and a DC voltage source, wherein the DDS alternating signal source is electrically connected to the upper AC electrode plate and the lower AC electrode plate respectively, and the DC voltage source is electrically connected to the upper DC electrode plate and the lower DC electrode plate respectively.

10. The ion trap device according to claim 1, characterized in that, It also includes a charge-coupled device (CCD) camera and a laser light source, with the lens of the CCD camera and the laser light source both facing the particle trapping area. The laser light source is used to illuminate the particles, and the CCD camera is used to capture images of the trapped particles.

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