Radio frequency front-end module, radio frequency front-end chip and radio frequency transceiver device

Abstract

The application provides a radio frequency front end module, comprising: a control module and a switch circuit module; the control module and the switch circuit module are arranged on a substrate; an input end of the switch circuit module receives an enabling signal generated by the control module, and a switch signal output end of the switch circuit module is connected to an amplification module. In the application, the control module and the switch circuit module are integrated together through a substrate, the switch circuit module controls corresponding frequency bands to be opened or closed under the action of the enabling signal emitted by the control module, so that frequency band signals of different frequency bands are output, and since the control module and the switch circuit module are integrated together, the integration degree of the radio frequency front end chip is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication, in particular to a radio frequency front-end module, a radio frequency front-end chip and a radio frequency transceiver device. BACKGROUND

[0002] The existing radio frequency transceiver device can be used for radio frequency energy and information transmission, and the radio frequency front-end module is the most important device in the radio frequency transceiver device, and is one of the devices with the highest stability and reliability requirements, mainly including a control module, a switch circuit module and an amplification module, wherein the control module, the switch circuit module and the amplification module are arranged separately, which makes the overall integration of the radio frequency front-end module relatively low. SUMMARY

[0003] Therefore, the embodiments of the present application provide a radio frequency front-end module, a radio frequency front-end chip and a radio frequency transceiver device to improve the integration of the radio frequency front-end module.

[0004] In a first aspect, the embodiments of the present application provide a radio frequency front-end module, comprising: a control module and a switch circuit module;

[0005] The control module and the switch circuit module are arranged on a substrate.

[0006] The input end of the switch circuit module receives an enable signal generated by the control module, and the switch signal output end of the switch circuit module is connected to an amplification module.

[0007] Optionally, the control module is configured to control the on-off of the switch circuit module, and to transmit the amplified current generated by the bandgap reference to the switch circuit module, so that the switch circuit module controls the opening and closing of the corresponding frequency band under the action of the enable signal, thereby outputting frequency band signals of different frequency bands.

[0008] Optionally, the control module and the switch circuit module are connected to the substrate through a flip-chip process.

[0009] Optionally, the frequency bands of the frequency band signals include high frequency bands, medium frequency bands and low frequency bands.

[0010] Optionally, the range of the low frequency bands includes 700MHz-950MHz, the range of the medium frequency bands includes 1700MHz-2000MHz, and the range of the high frequency bands includes 2300MHz-2700MHz.

[0011] Optionally, the switch circuit module matches the frequency bands of the frequency band signals, and is configured as a low frequency band switch circuit module, a medium frequency band switch circuit module and a high frequency band switch circuit module.

[0012] Optionally, the control module and the switch circuit module are sequentially arranged on the substrate and can be integrated in one chip.

[0013] Optionally, the control module comprises a first resistor, a second resistor, a first N-type transistor and a second N-type transistor, and a capacitor.

[0014] The collector and the base of the first N-type transistor are electrically connected with the first end of the first resistor, and the collector of the first N-type transistor serves as a current output end.

[0015] The second end of the first resistor is electrically connected with the first end of the second resistor and the first end of the capacitor.

[0016] The second end of the second resistor is electrically connected with the base of the second N-type transistor, and the base of the second N-type transistor is used for receiving the current generated by the bandgap reference.

[0017] The collector of the second N-type transistor is used for outputting an enable signal.

[0018] The emitter of the second N-type transistor and the emitter of the first N-type transistor are electrically connected with the second end of the capacitor.

[0019] Optionally, the switch circuit module comprises a first switch circuit module and a second switch circuit module; the first switch circuit module comprises a plurality of first switch units, and the second switch circuit module comprises a plurality of second switch units.

[0020] The first switch unit comprises a third N-type transistor and a fourth N-type transistor, and the base of the third N-type transistor and the base of the fourth N-type transistor are used for receiving the enable signal.

[0021] The emitter of the third N-type transistor and the collector of the fourth N-type transistor are electrically connected and serve as switch signal output ends.

[0022] The collector of the third N-type transistor and the emitter of the fourth N-type transistor are electrically connected and are used for receiving the amplified current of the current generated by the bandgap reference and amplified by the control module.

[0023] The second switch unit comprises a fifth N-type transistor and a sixth N-type transistor, and the base of the fifth N-type transistor and the base of the sixth N-type transistor are used for receiving the enable signal.

[0024] The emitter of the fifth N-type transistor and the collector of the sixth N-type transistor are electrically connected and serve as switch signal output ends.

[0025] The collector of the fifth N-type triode and the emitter of the sixth N-type triode are electrically connected, and are used for receiving the amplified current of the control module to the band gap reference.

[0026] In a second aspect, the embodiments of the present application provide a radio frequency front-end chip, comprising the radio frequency front-end module in any one of the first aspect.

[0027] In a third aspect, the embodiments of the present application provide a radio frequency transceiver device, comprising the radio frequency front-end chip in the second aspect.

[0028] The technical scheme provided by the embodiments of the present application can include the following beneficial effects:

[0029] In the present application, the control module and the switch circuit module are integrated together through a substrate, and the switch circuit module controls the corresponding frequency band to be opened or closed under the action of the enable signal output by the control module, so as to output the frequency band signals of different frequency bands. Since the control module and the switch circuit module are integrated together, the integration degree of the radio frequency front-end chip is improved.

[0030] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0032] Figure 1 A structural schematic diagram of a radio frequency front-end module provided by the embodiments of the present application;

[0033] Figure 2 A circuit diagram of a control module provided by the embodiments of the present application;

[0034] Figure 3 A circuit diagram of a switch circuit module provided by the embodiments of the present application. DETAILED DESCRIPTION

[0035] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application but not all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0036] Figure 1 A structural schematic diagram of a radio frequency front end module provided by the embodiments of the present application is shown in FIG. 1, which comprises a control module 1 and a switch circuit module 2; the control module 1 and the switch circuit module 2 are arranged on a substrate 3; an input end of the switch circuit module 2 receives an enable signal generated by the control module 1, and a switch signal output end of the switch circuit module 2 is connected to an amplification module 4. Figure 1

[0037] Specifically, as shown in FIG. 1, in the radio frequency front end module, the control module 1 and the switch circuit module 2 are integrated together through the substrate 3 to constitute one component, the switch circuit module 2 comprises a plurality of frequency band signal output ends for outputting frequency band signals of different frequency bands, each frequency band signal output end corresponds to one frequency band signal output by the amplification module 4, and the enable signal output by the control module 1 controls the on-off of the corresponding frequency band in the switch circuit module. Since the radio frequency front end module can support the radio frequency function of multiple frequency bands, the requirements of communication in different frequency bands can be met, and since the control module 1 and the switch circuit module 2 are integrated together, the integration of the radio frequency front end module is improved, and thus the component constituted by the control module 1 and the switch circuit module 2 occupies less space. Figure 1

[0038] ​​Further, for the communication device such as a mobile phone, multi-frequency and multi-mode has become a general trend. The multi-mode and multi-frequency mobile phone refers to a mobile phone that can be used between networks of different technical standards, which means that a mobile phone can support multiple network standards and multiple network frequency bands at the same time. For example, a mobile phone can support GSM, TD-SCDMA, WCDMA, TD-LTE, FDD-LTE and even more network standards and corresponding multiple frequency bands at the same time. In this way, not only the communication demand of the mobile phone in multiple frequency bands can be met, but also the device composed of the control module and the switch circuit module occupies a smaller space, so that the mobile phone can increase other devices without changing the size and thickness, thereby making the mobile phone have more functions or making the mobile phone become more lightweight.

[0039] It should be noted that, Figure 1 The specific packaging mode of the radio frequency front-end module and the setting of the radio frequency front-end module as a device in the electronic device can be set according to actual needs, which is not limited here, and Figure 1 The arrangement mode of the control module and the switch circuit module and the arrangement mode of the control module and the switch circuit module integrated together and the amplifier module can be set according to actual needs, which is not limited here.

[0040] In a feasible embodiment, the control module 1 is configured to control the on-off of the switch circuit module 2, and to transmit the generated enable signal and the current generated by the bandgap reference to the switch circuit module 2 after amplification, so that the switch circuit module 2 controls the opening and closing of the corresponding frequency band under the action of the enable signal, thereby outputting frequency band signals of different frequency bands.

[0041] Specifically, the switch circuit module 2 includes a plurality of frequency band signal output ends, and the switch circuit module 2 can only output frequency band signals of one frequency band at the same time. In order to achieve the above purpose, the control module 1 transmits the generated enable signal and the current generated by the bandgap reference to the switch circuit module 2 after amplification, and the switch circuit module 2 controls the opening and closing of the corresponding frequency band under the action of the enable signal, thereby enabling the switch circuit module 2 to output frequency band signals of the corresponding frequency band.

[0042] In a feasible embodiment, Figure 1 The control module 1 and the switch circuit module 2 in the radio frequency front-end module are connected to the substrate through flip-chip technology. In the flip-chip technology, the control module 1 and the switch circuit module 2 are face down to the substrate, and no wire bonding is needed, which can form the shortest circuit, thereby being beneficial to reduce the resistance. Moreover, since the flip-chip technology can reduce the packaging size, it is beneficial to reduce the packaging volume of the radio frequency front-end module.

[0043] In an implementable embodiment, the frequency bands of the frequency band signal include a high frequency band, a middle frequency band and a low frequency band.

[0044] Specifically, the communication frequency bands are roughly divided into the high frequency band, the middle frequency band and the low frequency band according to the frequency interval, and such a design can cover the communication of all frequency bands, which is conducive to improving the communication capability of the electronic device.

[0045] In an implementable embodiment, the range of the low frequency band includes 700-950 MHz, the range of the middle frequency band includes 1700-2000 MHz, and the range of the high frequency band includes 2300-2700 MHz.

[0046] It should be noted that the above different frequency bands are only roughly divided, and the range can be adjusted according to the actual situation, and each frequency band can be further divided into multiple sub-frequency bands according to the actual needs, and the specific division manner can be set according to the actual needs, which is not limited here.

[0047] In an implementable embodiment, the switch circuit module 2 matches the frequency bands of the frequency band signal, and is configured as a low frequency band switch circuit module, a middle frequency band switch circuit module and a high frequency band switch circuit module. When the switch circuit module 2 includes multiple frequency band switch circuit modules, the demand of different frequency bands can be met.

[0048] In an implementable embodiment, the control module 1 and the switch circuit module 2 are sequentially arranged on the substrate 3 and can be integrated in a chip, so that the device composed of the switch module 2 and the control module 1 occupies a smaller space and is conducive to improving the integration of the device.

[0049] It should be noted that the arrangement direction and interval of the control module and the switch circuit module can be set according to the actual needs, which is not limited here.

[0050] In an implementable embodiment, Figure 2 A circuit diagram of a control module provided by the embodiment of the present application is shown in FIG. 2. Figure 2As shown, the control module 1 comprises: a first resistor R1, a second resistor R2, a first N-type transistor T1, a second N-type transistor T2, and a capacitor C; the collector and the base of the first N-type transistor T1 are electrically connected to the first end of the first resistor R1, and the collector of the first N-type transistor T1 serves as a current output end; the second end of the first resistor R1 is electrically connected to the first end of the second resistor R2 and the first end of the capacitor C; the second end of the second resistor R2 is electrically connected to the base of the second N-type transistor T2, and the base of the second N-type transistor T2 is used for receiving a current generated by the bandgap reference; the collector of the second N-type transistor T2 is used for outputting an enable signal; and the emitter of the second N-type transistor T2 and the emitter of the first N-type transistor T1 are electrically connected to the second end of the capacitor C.

[0051] It should be noted that, in the above embodiment, Figure 2 , the current output end of the collector of the first N-type transistor outputs a bias current Ibias, the current generated by the bandgap reference and received by the base of the second N-type transistor is a radio frequency input signal RFin, and the enable signal output by the collector of the second N-type transistor is a radio frequency output signal RFout.

[0052] It should be noted that the specific type and size of the above device can be set according to actual needs, and are not specifically limited herein.

[0053] In one possible implementation, Figure 3 A circuit diagram of a switching circuit module provided by the embodiment of the present application is as shown in FIG. 2. Figure 3As shown, the switch circuit module 2 comprises: a first switch circuit module 21 and a second switch circuit module 22; the first switch circuit module 21 comprises a plurality of first switch units 211, and the second switch circuit module 22 comprises a plurality of second switch units 221; the first switch unit 211 comprises a third NPN transistor T3 and a fourth NPN transistor T4, the base of the third NPN transistor T3 and the base of the fourth NPN transistor T4 are both used for receiving the enable signal; the emitter of the third NPN transistor T3 and the collector of the fourth NPN transistor T4 are electrically connected and both serve as a switch signal output end; the collector of the third NPN transistor T3 and the emitter of the fourth NPN transistor T4 are electrically connected and both are used for receiving an amplified current after the control module 1 amplifies the current generated by the bandgap reference; the second switch unit 221 comprises a fifth NPN transistor T5 and a sixth NPN transistor T6, the base of the fifth NPN transistor T5 and the base of the sixth NPN transistor T6 are both used for receiving the enable signal; the emitter of the fifth NPN transistor T5 and the collector of the sixth NPN transistor T6 are electrically connected and both serve as a switch signal output end; the collector of the fifth NPN transistor T5 and the emitter of the sixth NPN transistor T6 are electrically connected and both are used for receiving an amplified current after the control module 1 amplifies the current generated by the bandgap reference.

[0054] It should be noted that Iptat is a positive temperature coefficient current, the bandgap reference source outputs a current generated by the bandgap reference, a high-performance bandgap reference source can provide a bandgap reference voltage current which is independent of external parameters such as power supply voltage, temperature and process, and the positive temperature coefficient current is a current positively related to temperature, which is generated by the bandgap reference source to generate an enable signal, and en_l in the figure is the enable signal.

[0055] It should be noted that the specific model and size of the above device can be set according to actual needs, which is not limited here.

[0056] In a feasible implementation, the above-mentioned radio frequency front-end module is arranged in a radio frequency front-end chip.

[0057] In a feasible implementation, the above-mentioned radio frequency front-end chip is arranged in a radio frequency transceiver device, which can be a mobile phone, a tablet computer or other electronic devices with multi-band communication function.

[0058] It should be noted that: similar labels and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings, in addition, the terms "first", "second", "third" and the like are only used to distinguish description, and cannot be understood as indicating or implying relative importance.

[0059] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present application, and are used to illustrate the technical solutions of the present application, but not to limit the same. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that any person skilled in the art can make modifications or easily think of changes to the technical solutions recorded in the foregoing embodiments, or make equivalent replacements to some of the technical features within the technical scope disclosed by the present application. The modifications, changes or replacements do not make the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application. All should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A radio frequency front end module, characterized by The application relates to a control module, a switch circuit module and an amplification module for processing radio frequency analog signals. The control module and the switch circuit module are arranged on a substrate and connected to the substrate through a flip-chip process. The input end of the switch circuit module receives an enabling signal generated by the control module, and the switch signal output end of the switch circuit module is connected to the amplification module. The switch circuit module comprises a plurality of frequency band signal output ends for outputting frequency band signals of different frequency bands, each frequency band signal output end corresponds to a frequency band signal of one frequency band output by the amplification module, and the control module is configured to control the on-off of the switch circuit module, amplify the current generated by the band gap reference and transmit the amplified current to the switch circuit module, so that the switch circuit module controls the opening and closing of the corresponding frequency band under the action of the enabling signal, thereby outputting frequency band signals of different frequency bands. The control module comprises a first resistor, a second resistor, a first N-type transistor and a second N-type transistor, and a capacitor. The collector and the base of the first N-type transistor are electrically connected to the first end of the first resistor, and the collector of the first N-type transistor serves as a current output end. The second end of the first resistor is electrically connected to the first end of the second resistor and the first end of the capacitor. The second end of the second resistor is electrically connected to the base of the second N-type transistor, and the base of the second N-type transistor is used for receiving the current generated by the band gap reference. The collector of the second N-type transistor is used for outputting an enabling signal. The emitter of the second N-type transistor and the emitter of the first N-type transistor are electrically connected to the second end of the capacitor. The frequency bands of the frequency band signals include high frequency bands, medium frequency bands and low frequency bands.

2. The radio frequency front-end module of claim 1, wherein, The switch circuit module matches the frequency bands of the frequency band signals and is configured as a low frequency band switch circuit module, a medium frequency band switch circuit module and a high frequency band switch circuit module.

3. The radio frequency front end module of claim 2, wherein the first and second switches are configured to be controlled by a single control signal. The low frequency band ranges from 700 MHz 950 MHz; the medium frequency band ranges from 1700 MHz 2000 MHz; the high frequency band ranges from 2300 MHz 2700 MHz.

4. The radio frequency front end module of claim 2, wherein the first and second switches are configured to be controlled by a single control signal. The control module and the switch circuit module are sequentially arranged on the substrate and can be integrated in one chip.

5. The radio frequency front end module of claim 1, wherein, The switch circuit module comprises a first switch circuit module and a second switch circuit module.

6. The radio frequency front end module of claim 1, wherein, The first switch unit comprises a third N-type transistor and a fourth N-type transistor, and the bases of the third N-type transistor and the fourth N-type transistor are used for receiving the enabling signal. The emitter of the third N-type transistor and the collector of the fourth N-type transistor are electrically connected and serve as switch signal output ends. The collector of the third N-type transistor and the emitter of the fourth N-type transistor are electrically connected and used for receiving the amplified current of the current generated by the band gap reference under the control of the control module. The second switch unit comprises a fifth N-type transistor and a sixth N-type transistor, and the bases of the fifth N-type transistor and the sixth N-type transistor are used for receiving the enabling signal. ​ The emitter of the fifth N-type triode and the collector of the sixth N-type triode are electrically connected, and both serve as a switching signal output end; The collector of the fifth N-type triode and the emitter of the sixth N-type triode are electrically connected, and both are used for receiving an amplified current after the control module amplifies a current generated by a band gap reference.

7. A radio frequency front-end chip, comprising: The radio frequency front-end module of any one of claims 1 6. The radio frequency front-end module of any one of claims 1 8. A radio frequency transceiver device, characterized by A radio frequency front-end chip comprising the chip of claim 7.

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