Highly stable perovskite solar cells with water vapor barrier and their preparation method

Abstract

This invention relates to a highly stable perovskite solar cell with a water vapor barrier and its fabrication method. The highly stable perovskite solar cell with a water vapor barrier comprises, from bottom to top: an ITO substrate, an electron transport layer, a perovskite absorber layer, a hole transport layer, a buffer layer, a water vapor barrier layer, and a gold electrode. The fabrication method of the highly stable perovskite solar cell with a water vapor barrier specifically includes the following steps: Step 1: Prepare the ITO substrate; Step 2: Prepare the electron transport layer; Step 3: Prepare the perovskite precursor solution; Step 4: Prepare the perovskite absorber layer; Step 5: Prepare the hole transport layer precursor solution; Step 6: Prepare the hole transport layer; Step 7: Prepare the buffer layer; Step 8: Prepare the water vapor barrier layer; Step 9: Prepare the gold electrode.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cells, specifically a highly stable perovskite solar cell with a water vapor barrier and its preparation method. Background Technology

[0002] Existing high-stability perovskite solar cells with water vapor barrier layers are such as Figure 1 The product structure shown, from bottom to top, consists of: 1) Glass / FTO; 2) SnO2 ALD+NPs; 3) Perovskite light-absorbing layer; 4) 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD); 5) ALD a-TiO2; and 6) Gold electrode.

[0003] Disadvantages of existing technology 1:

[0004] (1) The water vapor barrier of this a-TiO2 water vapor barrier layer has limited water vapor barrier capability, and this technology does not significantly improve the stability of the device.

[0005] (2) The precursor source tetra(dimethylamino)tin (TDMATi) for the preparation of a-TiO2 is expensive, which increases the cost of the entire preparation process. Summary of the Invention

[0006] In view of the deficiencies in the existing technology, the purpose of this invention is to provide a highly stable perovskite solar cell with a water vapor barrier and a method for its preparation.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] A highly stable perovskite solar cell with a water vapor barrier comprises, from bottom to top: an ITO substrate, an electron transport layer, a perovskite absorber layer, a hole transport layer, a buffer layer, a water vapor barrier layer, and a gold electrode.

[0009] Based on the above scheme, the electron transport layer is a SnO2 electron transport layer; the perovskite absorber layer is (FAPbI3). 0.85 (MAPbI3) 0.15 The perovskite absorber layer; the buffer layer is ALD SiAl x O yThe buffer layer; the water vapor barrier layer is an ALD SiO2 water vapor barrier layer; the thickness of the electron transport layer is approximately 18–20 nm, the thickness of the perovskite absorption layer is approximately 400–450 nm, the thickness of the hole transport layer is approximately 25–35 nm, the thickness of the buffer layer is approximately 4–6 nm, the thickness of the water vapor barrier layer is approximately 8–10 nm, and the thickness of the gold electrode is approximately 70–100 nm.

[0010] A method for fabricating a highly stable perovskite solar cell with a water vapor barrier specifically includes the following steps:

[0011] Step 1: Prepare the ITO substrate: Cut and clean the ITO conductive glass. First, cut the ITO conductive glass to a fixed size as the ITO substrate. Then, ultrasonically clean the cut ITO substrate and blow it dry after ultrasonic cleaning.

[0012] Step 2: Preparation of electron transport layer: The ITO substrate dried in Step 1 is used to prepare an ITO substrate with SnO2 electron transport layer by atomic layer deposition.

[0013] Step 3: Prepare the perovskite precursor solution;

[0014] Step 4: Preparation of the perovskite absorber layer: A one-step method is used to prepare the perovskite absorber layer on the electron transport layer;

[0015] Step 5: Prepare the hole transport layer precursor solution;

[0016] Step 6: Prepare the hole transport layer: Drop the prepared hole transport layer precursor solution onto the perovskite absorber layer and spin-coat to obtain the hole transport layer.

[0017] Step 7: Prepare a buffer layer: Prepare a buffer layer on the hole transport layer using atomic layer deposition.

[0018] Step 8: Prepare a water vapor barrier layer: Prepare a water vapor barrier layer on the buffer layer using atomic layer deposition.

[0019] Step 9: Gold electrode preparation: Gold electrode is deposited on the moisture barrier layer by vacuum evaporation.

[0020] Based on the above scheme, step 1 specifically includes: First, cutting the ITO conductive glass into 1.5x2.1cm pieces. 2 As an ITO substrate, the cut ITO substrate was then ultrasonically cleaned for 15 minutes in sequence with detergent, deionized water, acetone and 2-propanol. After ultrasonic cleaning, it was dried with nitrogen.

[0021] Based on the above scheme, step 2 specifically includes: placing the dried ITO substrate from step 1 into an S100-4 atomic layer deposition apparatus, setting the deposition substrate temperature to 200℃, the chamber wall temperature to 250℃, and the cycle time to 100 cycles; selecting a tin source precursor and an oxidizing precursor, wherein the tin source precursor is tetratetra(dimethylamino)tin (TDMASn) and the oxidizing precursor is H2O; setting the tin source precursor pulse time to 50ms and the purge time to 20s, and setting the oxidizing precursor pulse time to 20ms and the purge time to 20s; obtaining a SnO2 electron transport layer with a thickness range of approximately 18-20nm; and then placing the prepared SnO2 electron transport layer into an ultraviolet ozone cleaner for ultraviolet ozone treatment for 2 minutes to enhance the wettability of the SnO2 electron transport layer.

[0022] Based on the above scheme, step 3 specifically includes: dissolving 508 mg of lead iodide (PbI2), 180 mg of formamidinium hydroiodate (FAI), 67.8 mg of lead bromide (PbBr2), and 20.72 mg of methylammonium bromide (MABr) in 1 ml of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) solvent in a nitrogen glove box and stirring for 12 hours, wherein the ratio of DMF to DMSO is 4:1, to obtain (FAPbI3). 0.85 (MAPbBr3) 0.15 Precursor solution.

[0023] Based on the above scheme, step 4 specifically includes: dropping the perovskite precursor solution onto the ITO substrate containing the electron transport layer obtained in step 2, setting the parameters of the spin coater to 1000 rpm for 10 seconds and 5000 rpm for 30 seconds, and adding the anti-solvent chlorobenzene in the last 10 seconds, and then heating at 100°C for 60 minutes to obtain the perovskite absorption layer, the thickness of which is approximately 400–450 nm;

[0024] Based on the above scheme, step 5 specifically includes: dissolving 15 mg PTAA in 1 ml chlorobenzene in a nitrogen glove box, dissolving lithium bis(trifluoromethanesulfonyl)imide (litfsi) in acetonitrile, and preparing a Li salt solution with a concentration of 170 mg / ml; adding 10 μl of Li salt solution and 5 μl of 4-tert-butylpyridine (TBP) solution dropwise to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) solution, and stirring thoroughly to obtain a hole transport layer precursor solution.

[0025] Based on the above scheme, step 6 specifically includes: dropping the hole transport layer precursor solution onto the ITO substrate containing the perovskite absorber layer obtained in step 5, setting the spin coating parameters to 2000 rpm for 30 seconds, and obtaining a hole transport layer with a thickness range of approximately 25–35 nm.

[0026] Based on the above scheme, step 7 includes: placing the ITO substrate with the hole transport layer in the vacuum chamber of an S100-4 atomic layer deposition instrument; selecting a silicon source precursor, an aluminum source precursor, and an oxidizing precursor; wherein the silicon source precursor is tetrabutyl silicate (TEOS), the aluminum source precursor is trimethylaluminum (TMA), and the oxidizing precursor is deionized water; a complete reaction cycle sequentially includes a silicon source precursor reaction period, an oxidizing precursor reaction period one, an aluminum source precursor reaction period, and an oxidizing precursor reaction period two, wherein the silicon source precursor reaction period includes: setting the silicon source precursor pulse time to 50ms and the purge time to... The reaction period consists of 15s and a 10s waiting time. The first oxidation precursor reaction period includes: setting the oxidation precursor pulse time to 20ms, the purge time to 10s, and the waiting time to 10s. The aluminum source precursor reaction period includes: setting the aluminum source precursor pulse time to 20ms and the purge time to 20s. The second oxidation precursor reaction period includes: setting the oxidation precursor pulse time to 20ms and the purge time to 15s. The cavity substrate temperature is set to 100℃, the cavity wall temperature to 120℃, and the silicon source precursor heating temperature to 70℃. The total cycle time is 10 cycles, resulting in a buffer layer with a thickness ranging from approximately 4 to 6 nm.

[0027] Based on the above scheme, step 8 includes: placing the ITO substrate with a buffer layer in the vacuum chamber of the S100-4 atomic layer deposition instrument, and selecting two precursor sources: a silicon source precursor and an oxidizing precursor; the silicon source precursor is tetrabutyl silicate (TEOS), and the oxidizing precursor is deionized water. A complete reaction cycle includes a silicon source precursor reaction period and an oxidizing precursor reaction period. The silicon source precursor reaction period includes: setting the silicon source precursor pulse time to 50ms, the purge time to 15s, and the waiting time to 10s; the oxidizing precursor reaction period includes: setting the oxidizing precursor pulse time to 20ms, the purge time to 10s, and the waiting time to 10s; setting the chamber substrate temperature to 100℃, the chamber wall temperature to 120℃, and the silicon source precursor heating temperature to 70℃, with a total cycle of 30 cycles, to obtain a water vapor barrier layer with a thickness ranging from approximately 8 to 10 nm.

[0028] Based on the above scheme, step 9 includes: placing the ITO substrate with the moisture barrier layer into a vacuum coating machine and evacuating it to a vacuum level of 5×10⁻⁶. -6 Pa, then, the gold source is placed in a tungsten boat, and a gold electrode is deposited on the moisture barrier layer, the thickness of which is approximately 70–100 nm.

[0029] The working principle of this application is as follows: A water vapor barrier with a thickness ranging from approximately 12 to 16 nm is fabricated on the hole transport layer of a PTAA using atomic layer deposition technology. This water vapor barrier is composed of approximately 4 to 6 nm Al2SiAl. x O y The film consists of a buffer layer and an approximately 8–10 nm AlD SiO2 moisture barrier layer. The thin film prepared using atomic layer deposition (ALD) is dense, defect-free, and has controllable thickness. This bilayer thin film structure can match the energy level arrangement of perovskite solar cells and prevent external water and oxygen from eroding the internal perovskite light-absorbing layer, significantly improving the humidity stability of the perovskite solar cell device. After 1600 hours of aging at 60% humidity and room temperature, the device still retains 86.4% of its original efficiency.

[0030] The beneficial effects of this invention are:

[0031] Preparing a moisture barrier using atomic layer deposition allows for precise control of film thickness, fine-tuning of device energy level arrangement, and improved carrier transport efficiency, thereby enhancing the device's photovoltaic properties. Simultaneously, this moisture barrier prevents direct contact between external moisture and the perovskite material, preventing decomposition due to moisture erosion. This improves the device's humidity stability and long-term stability. Attached Figure Description

[0032] The present invention includes the following figures:

[0033] Figure 1 A schematic diagram of the structure in the prior art.

[0034] Figure 2 This application presents a structural schematic diagram.

[0035] Figure 3 This application includes a comparative experimental diagram.

[0036] Figure 4 This application includes experimental comparison diagrams of embodiments.

[0037] Figure 5 This application illustrates an embodiment. Figure 1 .

[0038] Figure 6 This application illustrates an embodiment. Figure 2 .

[0039] Figure label:

[0040] 1. Glass substrate

[0041] 2. ITO conductive thin film coating

[0042] 3. Electron transport layer

[0043] 4. Perovskite absorber layer

[0044] 5. Hole transport layer

[0045] 6. Buffer layer

[0046] 7. Moisture barrier layer

[0047] 8. Gold electrode Detailed Implementation

[0048] The following is in conjunction with the appendix Figures 2-6 The present invention will be described in further detail below.

[0049] like Figure 2 As shown, a highly stable perovskite solar cell with a water vapor barrier includes, from bottom to top: an ITO substrate, an electron transport layer 3, a perovskite absorber layer 4, a hole transport layer 5, a buffer layer 6, a water vapor barrier layer 7, and a gold electrode 8.

[0050] The ITO substrate is obtained by sputtering an ITO conductive thin film coating 2 onto a glass substrate 1 and then subjecting it to high-temperature annealing.

[0051] Based on the above scheme, the electron transport layer 3 is a SnO2 electron transport layer; the perovskite absorber layer 4 is (FAPbI3). 0.85 (MAPbI3) 0.15 The perovskite absorber layer; the buffer layer 5 is ALD SiAl x O y The buffer layer; the water vapor barrier layer 6 is an ALD SiO2 water vapor barrier layer; the thickness of the electron transport layer 3 is approximately 18-20 nm; the thickness of the perovskite absorption layer 4 is approximately 400-450 nm; the thickness of the hole transport layer 5 is approximately 25-35 nm; the thickness of the buffer layer 6 is approximately 4-6 nm; the thickness of the water vapor barrier layer 7 is approximately 8-10 nm; and the thickness of the gold electrode 8 is approximately 70-100 nm.

[0052] The main design of this invention is to embed a water vapor barrier into a conventional perovskite solar cell. This water vapor barrier consists of a bilayer thin film of approximately 12–16 nm, prepared using atomic layer deposition (ALDSiAl). The first layer is an ALDsiAl film. x O y The buffer layer, due to the high preparation temperature of SiO2 (approximately 100℃), incorporates Al doping into SiO2. This facilitates SiO2 deposition and provides sufficient reaction sites for the preparation of the second ALD SiO2 moisture barrier layer. This improves the film quality of the second ALD SiO2 moisture barrier layer. A dense, defect-free moisture barrier can regulate the energy level arrangement of the device, increase carrier transport efficiency, and enhance the photovoltaic parameters of the device (e.g., ...). Figure 5 The final perovskite solar cell device with a water vapor barrier exhibits significantly improved humidity stability.

[0053] A method for fabricating a highly stable perovskite solar cell with a water vapor barrier specifically includes the following steps:

[0054] Step 1: Prepare the ITO substrate: Cut and clean the ITO conductive glass. First, cut the ITO conductive glass to a fixed size as the ITO substrate. Then, ultrasonically clean the cut ITO substrate and blow it dry after ultrasonic cleaning.

[0055] Step 2: Preparation of electron transport layer: The ITO substrate dried in Step 1 is used to prepare an ITO substrate with SnO2 electron transport layer by atomic layer deposition.

[0056] Step 3: Prepare the perovskite precursor solution;

[0057] Step 4: Preparation of the perovskite absorber layer: A one-step method is used to prepare the perovskite absorber layer on the electron transport layer;

[0058] Step 5: Prepare the hole transport layer precursor solution;

[0059] Step 6: Prepare the hole transport layer: Drop the prepared hole transport layer precursor solution onto the perovskite absorber layer and spin-coat to obtain the hole transport layer.

[0060] Step 7: Prepare a buffer layer: Prepare a buffer layer on the hole transport layer using atomic layer deposition.

[0061] Step 8: Prepare a water vapor barrier layer: Prepare a water vapor barrier layer on the buffer layer using atomic layer deposition.

[0062] Step 9: Gold electrode preparation: Gold electrode is deposited on the moisture barrier layer by vacuum evaporation.

[0063] Based on the above scheme, step 1 specifically includes: First, cutting the ITO conductive glass into 1.5x2.1cm pieces. 2 As an ITO substrate, the cut ITO substrate was then ultrasonically cleaned for 15 minutes in sequence with detergent, deionized water, acetone and 2-propanol. After ultrasonic cleaning, it was dried with nitrogen.

[0064] Based on the above scheme, step 2 specifically includes: placing the dried ITO substrate from step 1 into an S100-4 atomic layer deposition apparatus, setting the deposition substrate temperature to 200℃, the chamber wall temperature to 250℃, and the cycle time to 100 cycles; selecting a tin source precursor and an oxidizing precursor, wherein the tin source precursor is tetratetra(dimethylamino)tin (TDMASn) and the oxidizing precursor is H2O; setting the tin source precursor pulse time to 50ms and the purge time to 20s, and setting the oxidizing precursor pulse time to 20ms and the purge time to 20s; obtaining a SnO2 electron transport layer with a thickness range of approximately 18-20nm; and then placing the prepared SnO2 electron transport layer into an ultraviolet ozone cleaner for ultraviolet ozone treatment for 2 minutes to enhance the wettability of the SnO2 electron transport layer.

[0065] Based on the above scheme, step 3 specifically includes: dissolving 508 mg of lead iodide (PbI2), 180 mg of formamidinium hydroiodate (FAI), 67.8 mg of lead bromide (PbBr2), and 20.72 mg of methylammonium bromide (MABr) in 1 ml of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) solvent in a nitrogen glove box and stirring for 12 hours, wherein the ratio of DMF to DMSO is 4:1, to obtain (FAPbI3). 0.85 (MAPbBr3) 0.15 Precursor solution.

[0066] Based on the above scheme, step 4 specifically includes: dropping the perovskite precursor solution onto the ITO substrate containing the electron transport layer obtained in step 2, setting the parameters of the spin coater to 1000 rpm for 10 seconds and 5000 rpm for 30 seconds, and adding the anti-solvent chlorobenzene in the last 10 seconds, and then heating at 100°C for 60 minutes to obtain the perovskite absorption layer, the thickness of which is approximately 400–450 nm;

[0067] Based on the above scheme, step 5 specifically includes: dissolving 15 mg PTAA in 1 ml chlorobenzene in a nitrogen glove box, dissolving lithium bis(trifluoromethanesulfonyl)imide (litfsi) in acetonitrile, and preparing a Li salt solution with a concentration of 170 mg / ml; adding 10 μl of Li salt solution and 5 μl of 4-tert-butylpyridine (TBP) solution dropwise to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) solution, and stirring thoroughly to obtain a hole transport layer precursor solution.

[0068] Based on the above scheme, step 6 specifically includes: dropping the hole transport layer precursor solution onto the ITO substrate containing the perovskite absorber layer obtained in step 5, setting the spin coating parameters to 2000 rpm for 30 seconds, and obtaining a hole transport layer with a thickness range of approximately 25–35 nm.

[0069] Based on the above scheme, step 7 includes: placing the ITO substrate with the hole transport layer in the vacuum chamber of an S100-4 atomic layer deposition instrument; selecting a silicon source precursor, an aluminum source precursor, and an oxidizing precursor; wherein the silicon source precursor is tetrabutyl silicate (TEOS), the aluminum source precursor is trimethylaluminum (TMA), and the oxidizing precursor is deionized water; a complete reaction cycle sequentially includes a silicon source precursor reaction period, an oxidizing precursor reaction period one, an aluminum source precursor reaction period, and an oxidizing precursor reaction period two, wherein the silicon source precursor reaction period includes: setting the silicon source precursor pulse time to 50ms and the purge time to... The reaction period consists of 15s and a 10s waiting time. The first oxidation precursor reaction period includes: setting the oxidation precursor pulse time to 20ms, the purge time to 10s, and the waiting time to 10s. The aluminum source precursor reaction period includes: setting the aluminum source precursor pulse time to 20ms and the purge time to 20s. The second oxidation precursor reaction period includes: setting the oxidation precursor pulse time to 20ms and the purge time to 15s. The cavity substrate temperature is set to 100℃, the cavity wall temperature to 120℃, and the silicon source precursor heating temperature to 70℃. The total cycle time is 10 cycles, resulting in a buffer layer with a thickness ranging from approximately 4 to 6 nm.

[0070] Based on the above scheme, step 8 includes: placing the ITO substrate with a buffer layer in the vacuum chamber of the S100-4 atomic layer deposition instrument, and selecting two precursor sources: a silicon source precursor and an oxidizing precursor; the silicon source precursor is tetrabutyl silicate (TEOS), and the oxidizing precursor is deionized water. A complete reaction cycle includes a silicon source precursor reaction period and an oxidizing precursor reaction period. The silicon source precursor reaction period includes: setting the silicon source precursor pulse time to 50ms, the purge time to 15s, and the waiting time to 10s; the oxidizing precursor reaction period includes: setting the oxidizing precursor pulse time to 20ms, the purge time to 10s, and the waiting time to 10s; setting the chamber substrate temperature to 100℃, the chamber wall temperature to 120℃, and the silicon source precursor heating temperature to 70℃, with a total cycle of 30 cycles, to obtain a water vapor barrier layer with a thickness ranging from approximately 8 to 10 nm.

[0071] Based on the above scheme, step 9 includes: placing the ITO substrate with the moisture barrier layer into a vacuum coating machine and evacuating it to a vacuum level of 5×10⁻⁶. -6 Pa, then, the gold source is placed in a tungsten boat, and a gold electrode is deposited on the moisture barrier layer, the thickness of which is approximately 70–100 nm. Figure 3 and Figure 4The images show the XRD patterns of the comparative example and the embodiment before and after aging at 50% humidity for one week. The embodiment was prepared using the method provided in this application, while the comparative example does not include a moisture barrier layer. From bottom to top, the comparative example includes an ITO substrate, an electron transport layer, a perovskite absorber layer, a hole transport layer, and a gold electrode. The remaining preparation methods are the same as in the embodiment. It can be seen that the peak intensity representing PbI2 increases in the comparative example, while the peak intensity change is not significant in the embodiment. This indicates that the moisture barrier in the embodiment can significantly reduce the erosion of the perovskite absorber layer by external water and oxygen, thus improving the humidity stability of the film. Figure 6 As shown, after 1600 hours of aging at 60% humidity and room temperature, the device efficiency of the embodiment can still maintain 86.4% of the original efficiency, while the efficiency of the comparative embodiment can only maintain 43% of the original efficiency.

[0072] The contents not described in detail in this specification are existing technologies known to those skilled in the art.

Claims

1. A high-stable perovskite solar cell with a water vapor barrier, characterized in that, From bottom to top in turn includes: ITO substrate, electron transport layer, perovskite absorption layer, hole transport layer, buffer layer, water vapor barrier layer and gold electrode, the electron transport layer is SnO2 electron transport layer; the perovskite absorption layer is (FAPbI3) 0.85 (MAPbI3) 0.15 Perovskite absorption layer; the buffer layer is ALD SiAl x O y Buffer layer; the water vapor barrier layer is ALD SiO2 water vapor barrier layer; the thickness of the electron transport layer is 18-20nm, the thickness of the perovskite absorption layer is 400-450nm; the thickness of the hole transport layer is 25-35nm; the thickness of the buffer layer is 4-6nm; the thickness of the water vapor barrier layer is 8-10nm; the thickness of the gold electrode is 70-100nm.

2. The method for preparing high-stability perovskite solar cells with water vapor barrier according to claim 1, specifically comprising the following steps: Step 1: preparing ITO substrate: cutting ITO conductive glass and cleaning, first, cutting ITO conductive glass into fixed size as ITO substrate, then, ultrasonic cleaning the cut ITO substrate, and blowing dry after ultrasonic cleaning; Step 2: preparing electron transport layer: preparing ITO substrate with SnO2 electron transport layer by atomic layer deposition method after blowing dry of ITO substrate in step 1; Step 3: configuring perovskite precursor solution; Step 4: preparing perovskite absorption layer: preparing perovskite absorption layer on the electron transport layer by one-step method; Step 5: preparing hole transport layer precursor solution; Step 6: preparing hole transport layer: dropping the prepared hole transport layer precursor solution on the perovskite absorption layer for spin coating to obtain hole transport layer; Step 7: preparing buffer layer: preparing buffer layer on the hole transport layer by atomic layer deposition method; Step 8: preparing water vapor barrier layer: preparing water vapor barrier layer on the buffer layer by atomic layer deposition method; Step 9: preparing gold electrode: evaporating gold electrode on the water vapor barrier layer by vacuum evaporation method.

3. The method of claim 2, wherein the step 1 specifically comprises: First, ITO conductive glass was cut into 1.5 x 2.1 cm 2 , as an ITO substrate, then the cut ITO substrate was sequentially cleaned with a detergent, deionized water, acetone and 2-propanol for 15 minutes, and after the ultrasonic cleaning was completed, it was dried with nitrogen; Step 2 specifically comprises: placing the ITO substrate blown dry in step 1 into S100-4 atomic layer deposition equipment, setting the deposition substrate temperature to 200℃, the cavity wall temperature to 250℃, the cycle period to 100 cycles, selecting tin source precursor and oxidizing precursor, the tin source precursor being TDMASn, and the oxidizing precursor being H2O, setting the tin source precursor pulse time to 50 ms, the purge time to 20 s, setting the oxidizing precursor pulse time to 20 ms, and the purge time to 20 s; obtaining SnO2 electron transport layer with thickness ranging from 18 nm to 20 nm, and then placing the prepared SnO2 electron transport layer into ultraviolet ozone cleaning machine for ultraviolet ozone treatment for 2 minutes to enhance the wettability of the SnO2 electron transport layer.

4. The method of claim 2, wherein the step 3 specifically comprises: In a nitrogen glove box, 508 mg of PbI2, 180 mg of FAI, 67.8 mg of PbBr2, and 20.72 mg of MABr were dissolved in 1 ml of DMF and DMSO solvents, which were stirred for 12 hours, wherein the ratio of DMF and DMSO was 4:1, to obtain (FAPbI3) 0.85 (MAPbBr3) 0.15 precursor solution; Step 4 specifically comprises: dropping the perovskite precursor solution on the ITO substrate containing the electron transport layer prepared in step 2, setting the parameters of the spin coater: 1000 rpm for 10 seconds, 5000 rpm for 30 seconds, and dropping anti-solvent chlorobenzene at the last 10 seconds, then heating at 100℃ for 60 minutes to obtain perovskite absorption layer, the thickness of the perovskite absorption layer ranging from 400 nm to 450 nm.

5. The method of producing a highly stable perovskite solar cell with a water vapor barrier according to claim 2, wherein Step 5 specifically comprises: dissolving 15 mg of PTAA in 1 ml of chlorobenzene in a nitrogen glove box, dissolving LiTFSI in acetonitrile to configure a Li salt solution with a concentration of 170 mg / ml; dropping 10 μl of Li salt solution and 5 μl of TBP into the PTAA solution, and stirring thoroughly to obtain hole transport layer precursor solution; Step 6 specifically comprises: dropping the hole transport layer precursor solution on the ITO substrate containing the perovskite absorption layer prepared in step 5, and setting the spin coating parameters to 2000 rpm for 30 seconds to obtain hole transport layer with thickness ranging from 25 nm to 35 nm.

6. The method of producing a highly stable perovskite solar cell with a water vapor barrier according to claim 2, wherein Step 7 comprises: placing the ITO substrate with the hole transport layer into a vacuum cavity of an S100-4 atomic layer deposition instrument, selecting a silicon source precursor, an aluminum source precursor and an oxidizing precursor, the silicon source precursor is TEOS, the aluminum source precursor is TMA, and the oxidizing precursor is deionized water; a complete reaction cycle comprises a silicon source precursor reaction period, an oxidizing precursor reaction period one, an aluminum source precursor reaction period and an oxidizing precursor reaction period two in sequence, wherein the silicon source precursor reaction period comprises: setting the silicon source precursor pulse time to 50 ms, the purge time to 15 s and the waiting time to 10 s; the oxidizing precursor reaction period one comprises: setting the oxidizing precursor pulse time to 20 ms, the purge time to 10 s and the waiting time to 10 s; the aluminum source precursor reaction period comprises: setting the aluminum source precursor pulse time to 20 ms and the purge time to 20 s; the oxidizing precursor reaction period two comprises: setting the oxidizing precursor pulse time to 20 ms and the purge time to 15 s; setting the cavity substrate temperature to 100℃, the cavity wall temperature to 120℃, the silicon source precursor heating temperature to 70℃, and the total cycle to 10 cycles, to obtain a buffer layer, and the thickness of the buffer layer ranges from 4 to 6 nm.

7. The method of producing a highly stable perovskite solar cell with a water vapor barrier according to claim 2, wherein Step 8 comprises: placing the ITO substrate with the buffer layer into a vacuum cavity of an S100-4 atomic layer deposition instrument, selecting two precursor sources of a silicon source precursor and an oxidizing precursor; the silicon source precursor is TEOS and the oxidizing precursor is deionized water, and a complete reaction cycle comprises a silicon source precursor reaction period and an oxidizing precursor reaction period.

8. The method of producing a highly stable perovskite solar cell with a water vapor barrier according to claim 7, wherein The silicon source precursor reaction period comprises: setting the silicon source precursor pulse time to 50 ms, the purge time to 15 s and the waiting time to 10 s; the oxidizing precursor reaction period comprises: setting the oxidizing precursor pulse time to 20 ms, the purge time to 10 s and the waiting time to 10 s, setting the cavity substrate temperature to 100℃, the cavity wall temperature to 120℃, the silicon source precursor heating temperature to 70℃, and the total cycle to 30 cycles, to obtain a water vapor barrier layer, and the thickness of the water vapor barrier layer ranges from 8 to 10 nm.

9. The method of producing a highly stable perovskite solar cell with a water vapor barrier according to claim 2, wherein Step 9 includes: placing the ITO substrate with the water vapor barrier layer into a vacuum coating machine, vacuumizing to 5x10 -6 Pa, and then placing a gold source into a tungsten boat to evaporate a gold electrode on the water vapor barrier layer, the thickness of the gold electrode ranging from 70 to 100 nm.

Images