Group III nitride semiconductor nanoparticles, core-shell particles and their manufacturing methods

Abstract

This invention provides substantially impurity-free and quantum-efficient group III nitride nanoparticles. When synthesizing group III nitride semiconductor nanoparticles with a particle size of less than 16 nm by reacting a material containing one or more group III elements M in a liquid phase, trimethylindium is used as at least one group III element material among the materials containing one or more group III elements M. Before the nanoparticle synthesis reaction, trimethylindium is dissolved in a coordination solvent to form a precursor, and this precursor is reacted with other group III element materials and a nitrogen source in a solvent under an inactive atmosphere at temperatures above 300°C to synthesize the nanoparticles.

Description

Technical Field

[0001] This invention relates to semiconductor nanoparticles composed of nitrides of group III elements such as Al, Ga, and In, and particularly to a method for manufacturing group III nitride semiconductor nanoparticles without using halogen-based materials. Background Technology

[0002] Nitride nanoparticles are promising photocatalysts for applications in EL devices such as lighting and displays, sensors, light-receiving elements such as solar cells, and hydrogen production. It is known that nitride nanoparticles exhibit quantum effects when their particle size is less than twice the Bohr radius. Even with the same composition, the bandgap can be controlled by altering the particle size, significantly improving the controllability of the emission wavelength or the absorption end of light.

[0003] Regarding Al x Ga y In z N (0≤(x,y,z)≤1, x+y+z=1) represents the Bohr radius of group III nitrides, which is 2.3 nm for AlN, 3.3 nm for GaN, and 8.2 nm for InN. By controlling their composition and particle size, the luminescence region can be controlled from ultraviolet to infrared. In particular, by including In, nitride nanoparticles that emit light in the visible light region can be fabricated, thus improving luminescence efficiency.

[0004] The manufacturing method of group III nitride nanoparticles generally involves chemical synthesis of group III element materials and nitrogen materials in a liquid phase. This chemical synthesis method can produce nanoparticles with a particle size of less than 16 nm that exhibit quantum effects. As group III element materials, halogen compounds such as indium iodide and gallium iodide, which remain stable even when heated during chemical synthesis, are commonly used. For example, Patent Document 1 discloses a method for manufacturing nitride nanoparticles using indium iodide and gallium iodide.

[0005] Prior art literature

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Publication No. 2012-515803 Summary of the Invention

[0008] The problem that the invention aims to solve

[0009] However, when using halogen compounds as raw materials, there is a problem that trace amounts of halogens can be incorporated as impurities into the resulting nitride particles. Furthermore, regarding halogen-based materials, transition elements such as iron group metals or alkali metals such as Li and Na may remain as residues during the manufacturing process. These elements, like halogens, are also incorporated into the nitride particles as impurities. These impurities in the particles function as non-luminescent centers relative to the excited charge carriers, thus leading to a decrease in luminescence efficiency. In particular, even trace amounts of transition elements such as iron group metals or alkali metals such as Li and Na, on the order of a few ppm, can cause a fatal reduction in luminescence efficiency.

[0010] Other Group III compounds besides halogen compounds include trimethylindium (TMIn) and triethylindium, which are organic Group III compounds. These compounds are used in the manufacture of high-quality nitride films, such as those produced by MOCVD, due to their high purity and absence of unwanted elements. However, heating TMI to above 80°C poses a risk of violent self-decomposition, potentially leading to an explosion. Therefore, it cannot be used in chemical synthesis where direct heating causes reaction and decomposition. Especially in the chemical synthesis of nitride nanoparticles, high thermal energy is required, necessitating temperatures of at least 100°C, preferably 150°C, making TMI unsuitable. Furthermore, if a self-decomposition reaction occurs, In metal is precipitated, preventing the production of In-containing nitride nanoparticles or nitrides with the desired elemental ratio.

[0011] The present invention was made to solve the above-mentioned problems of the prior art. The problem is to provide a method for manufacturing group III nitride nanoparticles by chemical synthesis without using halogen materials, and thereby provide group III nitride nanoparticles that are free of halogens.

[0012] Methods for solving problems

[0013] To address the aforementioned challenges, in-depth studies were conducted on the reaction conditions with organic group III materials available in chemical synthesis. The results showed that by using trimethyl M (where M is any one or more of Al, Ga, and In) as the group III element material and reacting it in a coordination solvent, self-decomposition could be suppressed, resulting in the production of group III nitride nanoparticles with the desired composition and a particle size of less than 16 nm. The produced group III nitride nanoparticles are free of halogen elements or impurity elements found in halogen-based materials and exhibit higher quantum efficiency compared to group III nitride nanoparticles synthesized using halogen-based materials.

[0014] Invention Effects

[0015] According to the present invention, in the chemical synthesis of nitride nanoparticles, an explosive self-decomposition reaction of TMIn can be suppressed, and nitride nanoparticles can be stably produced. In addition, according to the present invention, nitride nanoparticles having substantially no impurities that impede the luminescence efficiency and having a high luminescence efficiency can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a graph showing the relationship between the composition and the energy gap of group III nitride nanoparticles.

[0017] Figure 2 It is a graph showing the structure and the energy gap of core-shell nanoparticles.

[0018] Figure 3 It is a table showing the ICP analysis results of group III materials for producing group III nitride nanoparticles.

[0019] Figure 4 It is a graph showing the X-ray diffraction analysis results of the nitride nanoparticles obtained in Example 1 and Comparative Examples 2 and 3.

[0020] Figure 5 It is a graph showing the quantum efficiency measurement results of the nitride nanoparticles obtained in Example 1 and Comparative Example 3. DETAILED DESCRIPTION OF THE INVENTION

[0021] Hereinafter, embodiments of the group III nitride nanoparticles of the present invention and a method for producing the same will be described.

[0022] The group III nitride nanoparticles of the present invention are nanoparticles represented by the general formula: Al x Ga y In z N (where 0 ≤ (x, y, z) ≤ 1 and x + y + z = 1) or the general formula: Al x Ga y In z N (where 0 ≤ (x, y) < 1, 0 < z ≤ 1, and x + y + z = 1). It should be noted that the parentheses in "0 ≤ (x, y, z) ≤ 1" etc. mean that x, y, and z are respectively in the relationships represented by the inequality signs or equality signs before and after them.

[0023] The group III nitride nanoparticles of the present invention also include core-shell type particles, and the core-shell type particles have the nanoparticles represented by the above general formula as core particles and a group III nitride represented by a general formula as a shell.

[0024] As Figure 1As shown, within the range where the energy gaps of nitrides of aluminum (Al), gallium (Ga), and indium (In) can be connected by a curve representing the energy gap of binary nitrides to connect the energy gaps of mononitrides (AlN, GaN, InN), by varying the ratios of these three elements, it can be arbitrarily changed within this range. Additionally, the core-shell type has a band structure of type 1 as shown in Figure 2 and determines the ratios of the elements constituting the core particle and the shell such that the energy gap of the core particle (EGcore) and the energy gap of the shell (EGshell) satisfy EGcore < EGshell. As shown in Figure 1 , the more Al there is, the higher the energy gap, and the more In there is, the lower the energy gap. Therefore, for example, a band structure of type 1 can be achieved through a combination of a core particle containing more In and a shell containing more Al. As an example, core-shell type particles with a core particle of InGaN and a shell of AlInN can be cited. Without being limited to this example, as long as the energy gaps of the core particle and the shell satisfy the above relationship, various combinations of compositions can be made, and III-nitride nanoparticles containing indium or core-shell particles with them as core particles are particularly preferred. Thereby, the light-emitting region can be expanded to the visible region, and the light-emitting efficiency is also improved.

[0025] Regarding the ratio of group III elements in the nitride, it can be adjusted as follows: In the manufacture of the group III nitride nanoparticles described later, by using a compound as a raw material for the group III element in a stoichiometric ratio, the molar ratio of the group III element is made the desired ratio. In the manufacturing method of the present invention, since the precipitation of metals and the incorporation of impurities are suppressed during the reaction, the desired ratio can be achieved.

[0026] The particle size of the nitride nanoparticles of the present invention is 16 nm or less. A particle size of 16 nm or less is 2 times or less the Bohr radius of InN (8.2 nm), and thus, quantum effects are exhibited, and high light-emitting efficiency can be obtained. Nitride nanoparticles are usually chemically synthesized in a suitable solvent under high-temperature conditions, whereby the particle size can be made 16 nm or less, but in the manufacturing method of the present invention, it can also be achieved by adjusting synthesis conditions such as the synthesis temperature, heating time, solvent, and material concentration during manufacture. Specific synthesis conditions will be described later.

[0027] In addition, the nitride nanoparticles of the present invention are characterized in that they substantially do not contain impurity elements substantially mixed in halogen elements and halogen compounds. Nitride nanoparticles manufactured by conventional chemical synthesis methods are manufactured using halogen compounds as group III element materials during synthesis, and inevitably contain impurities from the halogen compounds. Impurities from halogen compounds vary depending on the type of halogen compound, and in addition to halogen elements such as iodine (I) and bromine (Br), transition elements such as fluorine, iron, manganese, and zinc, and alkali metal elements such as Li and Na can be cited. The nitride nanoparticles of the present invention are manufactured by chemical synthesis without using halogen compounds, and therefore do not contain such impurities and exhibit high quantum efficiency (luminescence efficiency).

[0028] The group III nitride nanoparticles / core-shell type group III nitride nanoparticles of the present invention can be widely used for general uses of semiconductor nanoparticles. In particular, their high quantum efficiency (high energy conversion efficiency, luminescence efficiency, light absorption efficiency, etc. derived therefrom) can be utilized, and they are suitable for use as wavelength conversion materials, photocatalysts, solar cells, EL light-emitting devices, etc.

[0029] Next, a method for manufacturing the above-mentioned group III nitride nanoparticles will be described.

[0030] In the method for manufacturing group III nitride nanoparticles of the present invention, when synthesizing group III nitride semiconductor nanoparticles with a particle size of 16 nm or less by reacting a material containing one or more group III elements M in a liquid phase, trimethyl M is used as at least one group III material in the material containing one or more group III elements M. Trimethyl M is pretreated with a coordination solvent.

[0031] The manufactured group III nitride semiconductor nanoparticles are nanoparticles represented by the general formula: Al x Ga y In z N (where 0 ≤ (x, y, z) ≤ 1, x + y + z = 1), or nanoparticles represented by the general formula: Al x Ga y In z N (where 0 ≤ (x, y) < 1, 0 < z ≤ 1, x + y + z = 1).

[0032] Hereinafter, the method for manufacturing group III nitride nanoparticles of the present invention will be described in detail.

[0033] The basis of the method for manufacturing group III nitride nanoparticles of the present invention is a chemical synthesis method in which a group III material and a nitrogen material are put into a solvent and heated to synthesize a nitride.

[0034] As group III materials, compounds of Al, Ga, and In are used. However, in the general formula above, where y > 0 (i.e., In is included), at least trimethylindium (TMIn) is used as the In material. Among organic In compounds, besides TMI, there are also trialkylindium compounds with similar structures and long organic chains, such as triethylindium. When these In compounds react at high temperatures, they undergo β-dehydrogenation to form metal hydrides, which then act as byproducts of hydrogen reduction based on these hydrides, resulting in the formation of metals. As a result, the stoichiometric ratio of V to III elements in the obtained nitride nanoparticles changes, making it impossible to obtain nitrides with the desired composition. When using TMI, such dehydrogenation is difficult to occur, and therefore no metallic indium is precipitated, resulting in nitride nanoparticles with a stable composition.

[0035] TMIn is preferably pre-treated with a coordination solvent before the reaction. The coordination solvent inhibits the vigorous autodecomposition reaction by coordinating with the In of TMIn. As a coordination solvent, trioctylphosphine (boiling point: 351 °C), tributylphosphine (boiling point: 150 °C / 6.7 kPa), trioctylamine (boiling point: 367 °C), diphenyl ether (boiling point: 260 °C), etc., are particularly preferred, with trioctylphosphine (hereinafter referred to as TOP) being especially preferred.

[0036] For Al and Ga materials, trimethylaluminum (TMAl) or trimethylgallium (TMGa) is preferred, but compounds other than trimethylated metals (excluding halogen compounds) can also be used. For example, aluminum acetone can be used in the case of Al, and gallium acetone can be used in the case of Ga. However, in order to minimize the impurity elements mixed into the nitride and maintain the stoichiometry, it is most preferable to use trimethylaluminum and trimethylgallium in the same way as in In materials.

[0037] As nitrogen-containing materials, ammonia, metal azides, metal nitrides, hydrazines, amines, and metal amides can be used. Sodium amides and lithium amides are particularly preferred.

[0038] As the reaction solvent, common solvents used in the synthesis of nitrides can be used. Specifically, examples include tetradecylbenzene (boiling point: 356°C), 1-octadecene (boiling point: 320°C), TOP, tributylphosphine, trioctylphosphine oxide (boiling point: 238°C / 0.4 kPa), diphenyl ether, etc., with tetradecylbenzene being particularly preferred.

[0039] In the manufacturing method of the present invention, first, TMIn in the Group III material is dissolved in a coordinating solvent for precursor formation. A precursor refers to a state separated by the solvation of TMIn, and by setting it to such a state, the self-decomposition reaction is suppressed. When the precursor formation treatment is carried out at a temperature of 20°C to below the boiling point of the solvent and above 88°C (the melting point of TMIn), there is a risk of explosion due to the self-decomposition reaction. Therefore, it is preferably carried out below 80°C. It is considered that, for example, in the case of using TOP, the precursor has a structure in which P (phosphorus) of TOP is coordinately bonded to the metal (indium) combined with trimethyl, and due to the large-volume trioctyl coordination, the TMIn molecules are separated, thus hindering the high self-decomposition reaction and enabling a relatively stable state to be maintained for a long time. Thus, even under heating above 100°C, it continuously functions as a stable Group III supply source.

[0040] The amount of the coordinating solvent required for precursor formation is preferably such that the molar ratio of P contained in TOP to the metal element of the trimethylated metal input as the Group III material is 1:1 or more, and more preferably 3:1 or more.

[0041] After carrying out such precursor formation treatment, a Group III element material other than TMIn, a nitrogen material, and a reaction solvent are added to the reaction system for a synthesis reaction. The concentration of the materials is not particularly limited. As the concentration of the metal element (total amount obtained by stoichiometry) in the reaction solvent, it is preferably about 3 to 36 moles per liter. In addition, the nitrogen material is preferably the same as or more than the Group III element material, and the concentration in the reaction solvent is preferably about 27 to 720 moles per liter.

[0042] The reaction is carried out under heating at 200°C or higher, preferably 300°C or higher, and more preferably 330°C or higher in an inert atmosphere. By carrying out the reaction at such a temperature, nitride nanoparticles with a particle size of 16 nm or less are formed. The reaction time also depends on the scale of the reaction, but is about 1 to 5 minutes. After the reaction, the particles are washed by repeatedly carrying out centrifugation using a specified solvent and then recovered as particles or a solvent dispersion.

[0043] The manufacturing method of the core-shell type nanoparticles is the same as the general manufacturing method of core-shell type nanoparticles. The Group III nitride nanoparticles obtained by the above manufacturing method are used as core particles, and a Group III nitride serving as a shell covering it is synthesized. In order to obtain a Type 1 structure, the compositions of the core particles and the shell are selected such that the energy gap (EGcore) of the core particles and the energy gap (EGshell) of the shell satisfy EGcore < EGshell. For example, the core particles have a composition containing more In, and the shell has a composition containing more Al. In addition, as the material of the Group III element constituting the shell, a material other than a halogen compound is used, particularly a trimethyl compound.

[0044] The synthesis reaction for shell formation is carried out as follows: nanoparticles manufactured by the above-described method, materials of the group III element constituting the shell, and a solvent are added to a reaction vessel, and the mixture is heated to 200°C or higher, preferably 300°C or higher, and more preferably 330°C or higher in an inert atmosphere. The solvent can be the same as that used to manufacture the core particles. The recovery method for the generated core-shell particles is the same as that for the core particles, involving repeated centrifugation and washing using a dispersion medium to recover the core-shell particles as a dispersion.

[0045] The group III nitride nanoparticles / core-shell group III nitride nanoparticles obtained by the above manufacturing method are essentially free of impurities (e.g., undetectable in powder X-ray determination) because they do not use halogen-based materials containing impurity elements such as iron. They have high purity and will not cause a decrease in luminescence efficiency due to impurities.

[0046] Example

[0047] The following describes an example of manufacturing the group III nitride nanoparticles of the present invention. It should be noted that in the following examples and comparative examples, the particle size was measured using transmission electron microscopy (TEM) / scanning transmission electron microscopy (STEM).

[0048] [Example 1]

[0049] Trimethylgallium was used as the Ga source, TMIn as the In source, and lithium amide as the Group V source. General ICP measurements of TMGa and TMIn used as materials are shown below. Figure 3 For reference, the determination results of indium iodide and gallium iodide are also presented here. Figure 3 As shown in the figure, transition metals and alkali metals were detected in the iodide, whereas no such impurity elements were detected in the material used in this embodiment.

[0050] First, add TMI (0.0675 mmol) to TOP (0.5 ml) and heat to 40 °C for prepolymerization. Hereinafter, the prepolymerized TMI will be abbreviated as TMI@TOP.

[0051] In a glass reaction vessel, add 0.0675 mmol of TOP@TMIn, 0.0675 mmol of TMGa, and 2.7 mmol of lithium amide, and add tetradecylbenzene (1.0 ml) as a reaction solvent. Heat to 350 °C in an inactive atmosphere and react for about 3 minutes.

[0052] After the reaction, the product was collected in a centrifuge tube, and a mixed solvent of hexane and ethanol at a volume ratio of approximately 3:7 was added. The mixture was centrifuged at 10,000–30,000 rpm for about 30 minutes, and the supernatant was discarded. The resulting precipitate was dispersed in hexane, and ethanol was added. The mixture was then centrifuged again under the same conditions. This process was repeated 3–5 times to wash the particles. Finally, the particles were dispersed in hexane to obtain a hexane dispersion sample. The obtained nanoparticles had a particle size of 3–5 nm.

[0053] [Comparative Example 1]

[0054] Using TMI without precursor treatment instead of TMI@TOP as the In source resulted in explosive self-decomposition during heating, and the product could not be recovered.

[0055] [Comparative Example 2]

[0056] Triethylin (TEIn) was used instead of TMI as the In source, and the reaction was carried out in the same manner as in Example 1 to produce nitride particles. It should be noted that TEIn does not undergo a self-decomposition reaction, therefore it was directly added to the reaction solvent without any precursor treatment. The resulting nanoparticles had a particle size of 50–200 nm.

[0057] [Comparative Example 3]

[0058] Indium iodide (InI3) and gallium iodide (GaI3) were used instead of TMIn and TMGa as the In source and Ga source, respectively. Otherwise, the procedure was the same as in Example 1 to obtain nitride nanoparticles (hexane dispersion). The obtained nanoparticles had a particle size of 3–5 nm.

[0059] Powder X-ray diffraction (XRD) was performed on the nitride particles obtained in Example 1 and Comparative Examples 2 and 3, respectively. The results are shown below. Figure 4 .

[0060] according to Figure 4 The powder X-ray diffraction results shown confirmed the formation of nitride nanoparticles in Examples 1 and Comparative Examples 2 and 3, but In metal precipitation was observed in Comparative Example 2. This indicates that if the alkyl chain becomes longer, metal precipitation due to reduction reaction occurs, resulting in the inability to obtain nitride particles of good purity and a reduced yield.

[0061] In addition, impurity analysis and quantum efficiency determination were performed on the nitride nanoparticles of Example 1 and Comparative Example 3. In the impurity analysis, iron (Fe) was determined using X-ray fluorescence (XRF), and iodine (I) was determined using X-ray photoelectron spectroscopy (XPS) and ICP. The quantum efficiency was determined using a quantum efficiency meter (Otsuka Electronics QE-2100) by incident excitation light (365 nm) onto the particle dispersion. The results of the impurity analysis are shown in Table 1, and the results of the quantum efficiency determination are shown in Table 2. Figure 5 It should be noted that the results of the impurity analysis are calculated using the impurities detected in each assay and the measured values ​​of Group III, as "impurity amount (ppm) relative to Group III".

[0062] [Table 1]

[0063] Table 1

[0064] Fe(XRF) I(XPS) I(ICP) Example 1 Not detected (*1) Not detected (*2) Not detected (*3) Comparative Example 3 83 1014 876

[0065] *1: Detection limit: 20 ppm, *2: Detection limit: 500 ppm, *3: Detection limit: 100 ppm

[0066] As shown in Table 1, in Comparative Example 3, which used a halogen compound as a Group III source material, Fe was detected as an impurity in addition to halogen element (I). In contrast, these impurity elements were not detected in Example 1. This indicates that impurities such as Fe, other than halogens, originate from the material itself. By not using halogen compounds as the material, high-purity nitride particles can be obtained. Furthermore, as... Figure 5 As shown, the quantum efficiency of the nitride nanoparticles of Example 1 was confirmed to be about 11%, while the quantum efficiency of the nitride nanoparticles of Comparative Example 3 was as low as about 7%, with reduced luminescence efficiency due to impurities in the material.

[0067] [Example 2]

[0068] The following precursor treatment, core-particle synthesis, and shell formation were performed sequentially to produce core-shell nitride particles. Trimethylgallium was used as the Ga source, TMIn as the In source, TMAl as the Al source, and lithium amide as the Group V source.

[0069] In the precursor treatment, similar to Example 1, TMI was added to TOP (0.5 ml) and heated to 40°C for precursor treatment to obtain TMI@TOP.

[0070] In the synthesis of nuclei, 0.0675 mmol of TOP@TMIn, 0.0675 mmol of TMGa, 2.7 mmol of lithium amide, and 1.0 ml of tetradecylbenzene as a reaction solvent were added to a glass reaction vessel and heated to 350 °C in an inactive atmosphere for about 3 minutes.

[0071] The product was recovered into a centrifuge tube and, similar to Example 1, was repeatedly centrifuged and washed with hexane / ethanol to obtain hexane-dispersed InGaN nanoparticles (particle size 3-5 nm).

[0072] Next, tetradecylbenzene was added to the InGaN nanoparticle dispersion and solvent displacement was carried out under reduced pressure while diffusion was performed. The solvent-displaced InGaN nanoparticles (core particles) were placed in a glass reaction vessel, and 0.054 mmol of TMAl and 0.081 mmol of TMIn@TOP were added. In the added materials, the proportion of In among group III elements was 60 atomic%. 2.7 mmol of lithium was further added, and the reaction was initiated by heating to 350 °C in an inactive atmosphere.

[0073] Similar to the synthesis of the aforementioned core particles, the product was repeatedly centrifuged and washed to finally obtain hexane-dispersed core-shell particles (In). 0.5 Ga 0.5 N / Al 0.4 In 0.6 (N). Powder X-ray diffraction confirmed that these were nitride nanoparticles. The particle size of these core-shell particles was 3–6 nm.

[0074] [Comparative Example 4]

[0075] The In source, Ga source, and Al source were replaced with indium iodide, gallium iodide, and aluminum iodide (AlI3), respectively. Otherwise, the core-shell particles were manufactured in the same manner as in Example 2. Based on the ICP analysis results shown in Table 1 and the quantum efficiency measurement results of Comparative Example 3, it is speculated that the luminous efficiency of Comparative Example 4 is also lower than that of Example 2.

[0076] Industrial applicability

[0077] According to the present invention, a nitride nanoparticle is provided, which can improve the performance of wavelength conversion materials, photocatalysts, solar cells, EL light-emitting devices, etc.

Claims

1. A method for manufacturing group III nitride semiconductor nanoparticles, characterized in that, When synthesizing group III nitride semiconductor nanoparticles with a particle size of less than 16 nm by reacting a material containing one or more group III elements M in a liquid phase, the synthesis temperature is set to above 100 °C, a coordination solvent is used, and trimethyl M is used as at least one group III element material among the materials containing one or more group III elements M, and a metal amide is used as the nitrogen material.

2. The method for manufacturing group III nitride semiconductor nanoparticles according to claim 1, characterized in that, The group III nitride semiconductor nanoparticles are of the general formula: Al x Ga y In z N represents nanoparticles, where 0 ≤ (x, y, z) ≤ 1 and x + y + z = 1.

3. The method for manufacturing group III nitride semiconductor nanoparticles according to claim 1, characterized in that, The group III nitride semiconductor nanoparticles are of the general formula: Al x Ga y In z N represents nanoparticles, where 0 ≤ (x, y) < 1, 0 <z≤1,x+y+z=1。 4. The method for manufacturing group III nitride semiconductor nanoparticles according to any one of claims 1 to 3, characterized in that, The group III element material contains trimethylindium, and the manufacturing method includes a process of pre-forming trimethylindium by dissolving it in a coordination solvent prior to the synthesis reaction of the nanoparticles.

5. The method for manufacturing group III nitride semiconductor nanoparticles according to claim 4, characterized in that, The group III element material also includes at least one of trimethylgallium and trimethylaluminum.

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