Plasma processing apparatus, data analysis apparatus, and semiconductor device manufacturing system

Abstract

Provided are a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system that can assign appropriate elements in accordance with features of a peak shape and perform wavelength recognition with high precision. The plasma processing apparatus includes a processing chamber that performs plasma processing on a sample; a high-frequency power source that supplies high-frequency electric power for generating a plasma; and a sample stage that places the sample. The plasma processing apparatus further includes an analysis section that determines an element or a molecule in a monitored plasma based on a degree of coincidence of a first spectral waveform and a second spectral waveform of a spectrum waveform of light emitted by the monitored plasma, the second spectral waveform being a spectral waveform corresponding to the element or the molecule and multiplied by a weight coefficient.

Description

TECHNICAL FIELD

[0001] The present application relates to a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system. BACKGROUND

[0002] Known is an etching apparatus or the like plasma processing apparatus that etches a wafer by plasma generated in a processing chamber in order to obtain a fine shape of a semiconductor device or the like.

[0003] Ionization phenomena caused by plasma are accompanied by light emission phenomena, and therefore, in an etching apparatus that performs processing using plasma, there are etching apparatuses that mount a spectrometer so that light emitted by plasma can be monitored. By monitoring light emitted by plasma, for example, troubleshooting and the like can be performed. Data measured by the spectrometer is referred to as light emission data hereinafter.

[0004] Light emission data is constituted by a plurality of wavelengths and values of light emission intensity at times, but the number of wavelength data collected by the spectrometer reaches several thousands, and therefore, selecting wavelengths to be set as analysis targets from the large amount of wavelength data is a problem.

[0005] In Patent Literature 1, a technique of determining wavelengths used in analysis of etching processing from light emission data of plasma (referred to as wavelength identification) is described. By using this prior art on a light emission spectrum in which wavelength identification is desired, an element corresponding to a wavelength of a peak of light emission data can be identified.

[0006] Further, in Patent Literature 2, a method of identifying an element assigned to a peak of light emission data using a pattern model is described.

[0007] PRIOR ART DOCUMENTS

[0008] PATENT LITERATURE

[0009] Patent Literature 1: JP Patent No. 6088867

[0010] Patent Literature 2: JP Patent No. 2521406 SUMMARY

[0011] PROBLEMS TO BE SOLVED BY THE INVENTION

[0012] However, in the technique described in Patent Literature 1, since only a wavelength of a peak and an intensity of the peak extracted from a spectrum waveform of light emission data are used, a shape of the peak is not set as an object, and therefore, there is a possibility that an element assigned to the wavelength of the peak is wrong.

[0013] Further, in the technology described in Patent Literature 2, there is a case where correct elements and incorrect elements are doubly assigned to one peak. It is also conceivable that, in this case, it is necessary to judge which is the correct element according to the experience of an analyst, and this judgment is troublesome.

[0014] Therefore, the present application aims to provide an ion processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system that can assign appropriate elements or molecules according to the characteristics of the shape of a peak and can perform wavelength recognition with high accuracy.

[0015] Means for solving the problem

[0016] To achieve the above object, one of the ion processing apparatuses of the present application to which the representative aspect of the present application pertains is achieved by the following means, and includes: a processing chamber that performs ion processing on a sample; a high-frequency power source that supplies high-frequency electric power for generating an ion; and a sample stage that places the sample, and in the ion processing apparatus, further includes: an analysis section that determines an element or a molecule in the ion being monitored according to the degree of agreement of a first spectral waveform with a second spectral waveform that is obtained by comparing the first spectral waveform and the second spectral waveform of a spectral waveform of light emission of the ion being monitored, the second spectral waveform being a spectral waveform corresponding to the element or the molecule and multiplied by a weight coefficient.

[0017] Further, one of the data analysis apparatuses of the present application to which the representative aspect of the present application pertains is achieved by the following means, and includes: an analysis section that determines an element or a molecule in the ion being monitored according to the degree of agreement of a first spectral waveform with a second spectral waveform that is obtained by comparing the first spectral waveform and the second spectral waveform of a spectral waveform of light emission of the ion being monitored, the second spectral waveform being a spectral waveform corresponding to the element or the molecule in the ion and multiplied by a weight coefficient.

[0018] Further, one of the semiconductor device manufacturing systems of the present application to which the representative aspect of the present application pertains is achieved by the following means, and includes: a platform that is connected to a semiconductor manufacturing apparatus via a network and performs an analysis process of determining an element or a molecule in an ion, and in the semiconductor device manufacturing system, the analysis process has a step of determining an element or a molecule in the ion being monitored according to the degree of agreement of a first spectral waveform with a second spectral waveform that is obtained by comparing the first spectral waveform and the second spectral waveform of a spectral waveform of light emission of the ion being monitored, the second spectral waveform being a spectral waveform corresponding to the element or the molecule in the ion and multiplied by a weight coefficient.

[0019] Effects of the Invention

[0020] According to the present application, a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system capable of assigning appropriate elements or molecules in accordance with characteristics of a shape of a peak and capable of performing wavelength recognition with high precision can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0022] Figure 2 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0023] Figure 3 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0024] Figure 4 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0025] Figure 5 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0026] Figure 6 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0027] Figure 7 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0028] Figure 8 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0029] Figure 9 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0030] Figure 10 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0031] Figure 11 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0032] Figure 12 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0033] Figure 13 is a diagram showing an outline of a structure of a plasma processing apparatus according to an embodiment of the present application.

[0034] Figure 14is a view showing an example of a fitting result of a spectrum waveform of an analysis target and a spectrum waveform synthesized from the spectrum waveforms of the database.

[0035] Figure 15 is a view showing an example of a fitting result of a spectrum waveform of an analysis target and a spectrum waveform synthesized from the spectrum waveforms of the database.

[0036] Figure 16 is a view showing an input screen related to an embodiment of the present application.

[0037] Figure 17 is a view showing a display screen related to an embodiment of the present application.

[0038] Figure 18 is a view showing an analysis unit related to another embodiment of the present application.

[0039] Figure 19 is a view showing a processing flow of an operator and an analysis unit related to another embodiment of the present application. DETAILED DESCRIPTION

[0040] Embodiments of the present application will be described below with reference to the drawings. In the present specification, an element or molecule will be referred to as a component.

[0041] [Embodiment 1]

[0042] Figure 1 is a schematic view explaining the structure of a plasma processing apparatus 1 related to an embodiment of the present application. The plasma processing apparatus 1 is provided with a processing chamber 2 that performs plasma processing, a mass flow controller 3 that adjusts the supply amount and speed of a processing gas supplied into the processing chamber 2, a high-frequency power source 4 for plasma generation that supplies high-frequency electric power for generating plasma by exciting the processing gas supplied into the processing chamber 2, and an exhaust device 5 that includes a vacuum pump that exhausts the gas in the processing chamber 2. Further, a sample stage 7 is arranged below the space in which plasma is generated in the processing chamber 2, and a wafer 6 that is a sample to be processed is loaded and held on the upper surface of the sample stage 7.

[0043] A processing gas used in etching processing is supplied into the processing chamber 2 via the mass flow controller 3. High-frequency electric power of a given frequency (for example, 2.45 GHz) supplied from the high-frequency power source 4 for plasma generation is introduced into the processing chamber via a propagation unit such as a waveguide arranged above the processing chamber 2. Further, a magnetic field is formed in the processing chamber 2 from a magnetic field forming unit 16 arranged so as to surround the processing chamber 2 on the upper side and the side of the processing chamber 2. Particles of the gas are excited by the interaction of the high-frequency electric power and the magnetic field, and plasma 8 is generated in the processing chamber 2.

[0044] An electrode of an electric conductor is arranged inside the sample stage 7, and a bias electric field is formed above the upper surface of the wafer 6 on the sample stage 7 or the surface on which the wafer 6 is held by supplying high-frequency electric power from a high-frequency power source 9 for bias to the electrode. Charged particles (ions) in the plasma 8 are guided by the bias electric field thus formed to collide with the film formed on the surface of the wafer 6. Thus, the surface of the wafer 6 is activated, and chemical and physical interactions between the reactive particles in the plasma 8 and the material constituting the film are promoted, so that the etching process of the target film progresses.

[0045] A variable conductance valve 11 is arranged in a passage that communicates between the processing chamber 2 and the exhaust device 5. The variable conductance valve 11 is a valve that has a plurality of plates that rotate around an axis arranged in the horizontal direction to variably adjust the opening area of the passage. A pressure gauge 10 measures the pressure in the processing chamber 2. The measured value from the pressure gauge 10 is compared with a reference value, and the angle position of the variable conductance valve 11 is changed according to the comparison result to adjust the conductance. Thus, the exhaust speed is adjusted, and the pressure in the processing chamber 2 is maintained at a value appropriate for processing.

[0046] The ionization phenomenon caused by the plasma is accompanied by a light emission phenomenon. The light emission of the plasma 8 generated in the plasma processing is observed by a spectroscope 13 as a monitor via an observation window 12 constituted by a light-transmissive member of a wall member arranged in the side wall of the processing chamber 2, and the intensity thereof is detected. The spectroscope 13 can also perform adjustment of the light emission intensity according to the exposure time. A signal (light emission information) related to the light emission intensity of the plasma 8 detected by the spectroscope 13 is transmitted to an analysis section 14 arranged so as to be able to communicate therewith, and is stored. In the analysis section 14, a wavelength recognition operation is performed according to the spectral waveform acquired from the spectroscope 13, and the result thereof is transmitted to a display section 15. The result of the wavelength recognition received from the analysis section 14 is displayed on the display section 15. In addition, the analysis section 14 has, for example, a touch panel capable of performing information display and input on the display section 15 as an input device by which the operator can perform input. However, a keyboard or the like can be provided instead of the touch panel. Figure 2 The details of the analysis section 14 will be described. The result of the wavelength recognition received from the analysis section 14 is displayed on the display section 15. In addition, the analysis section 14 has, for example, a touch panel capable of performing information display and input on the display section 15 as an input device by which the operator can perform input. However, a keyboard or the like can be provided instead of the touch panel.

[0047] Figure 2 is a schematic diagram illustrating an outline of the analysis section 14. The analysis section 14 functions as a data analysis device and has a spectral waveform database 21, a spectral synthesis operation section 22, a spectral storage section 23, a coincidence degree operation section 24, a component wavelength database 25, and a wavelength recognition operation section 26.

[0048] The spectral waveform database 21 registers (stores) the spectral waveform acquired in the spectroscope 13 for each gas species and etched material. In the spectral waveform database 21, the spectral waveform of each gas species and etched material is registered in advance. Figure 3 An example of registration in the spectral waveform database 21 is shown.

[0049] The spectral synthesis operation unit 22 performs a calculation to synthesize one or more spectral waveforms stored in the spectral waveform database 21 into one spectral waveform by multiplying each of them by a weighting coefficient.

[0050] The spectrum storage unit 23 stores the spectral waveform of the analytical object obtained by the spectrometer 13.

[0051] The consistency calculation unit 24 compares the synthesized spectral waveform calculated in the spectral synthesis calculation unit 22 with the spectral waveform of the analytical object stored in the spectral storage unit 23, and calculates the consistency.

[0052] The component wavelength database 25 is a database containing the peak wavelength of each component, establishing a correspondence between component names (information related to elements or molecules) and peak wavelengths for registration. Figure 4 Examples of entries in the component wavelength database 25 are shown.

[0053] The wavelength identification calculation unit 26 uses the weighting coefficients of the spectral synthesis calculation unit 22 and the peak wavelength and peak intensity of the component wavelength database 25 to perform calculations to identify the components corresponding to the peak wavelength.

[0054] Figure 3 This represents an example of data stored in the spectral waveform database 21. In this database, corresponding fields are established for each other, such as the gas type column 21a, the etched material column 21b, the composition column 21c, and the luminescence intensity column 21d for each wavelength.

[0055] Stored in the gas type column 21a and the etched material column 21b Figure 6 The database shown contains the types of gases used in the plasma processing during the creation process and the materials being etched. The composition column 21c stores a list of possible components that can be included in the gas types and etched materials. The emission intensity column 21d for each wavelength stores the emission spectrum obtained by the spectrometer 13 during the plasma processing under the conditions registered in the gas type column 21a and the etched material column 21b. The database also includes information on the gas type column 21a, the etched material column 21b, the composition column 21c, and the emission intensity column 21d for each wavelength. Figure 6 Step 608 involves registration processing.

[0056] Figure 4 This is an example of the component wavelength database 25. In this database, the fields such as component column 25a and wavelength column 25b are mapped to each other.

[0057] The composition column 25a contains components that may be contained in the gas and the etched material. The wavelength column 25b contains the wavelength of light emitted by the components in composition column 25a.

[0058] Figure 5is a diagram showing the overall processing flow involved in the present embodiment. The actions based on Figure 5 are as follows.

[0059] (Step 501)

[0060] The plasma processing (etching processing) is performed in advance for each gas species and etched material to create a spectral waveform database 21 that becomes a reference. Details of the creation processing of the spectral waveform database 21 are described with reference to Figure 6 later.

[0061] (Step 502)

[0062] When performing an arbitrary plasma processing that is the analysis target, the analysis section 14 acquires the spectral waveform A (also referred to as the first spectral waveform) of the analysis target with the spectrometer 13 and saves it to the spectral storage section 23.

[0063] (Step 503)

[0064] The analysis section 14 performs wavelength recognition processing on the spectral waveform of the analysis target acquired in Step 502. Details of the wavelength recognition processing in the analysis section are described later with reference to Figure 10

[0065] (Step 504)

[0066] The analysis section 14 transmits the result of the wavelength recognition obtained in Step 503 to the display section 15, and the display section 15 displays the component name, peak wavelength, and contribution degree of each component on the display screen. The contribution degree is an index indicating the magnitude of the light emission intensity of each component at the extracted peak wavelength. Details of the display example are shown in Figure 17

[0067] Figure 6 is a diagram showing the detailed flow of Step 501 of the overall processing flow shown in Figure 5 By performing this processing flow for each gas species and etched material, a database is created. The actions based on Figure 6 are as follows.

[0068] (Step 601)

[0069] In the spectrometer 13, n dark current waveforms C1 to Cn are acquired for each of n exposure times (t1 to t n ) set for measuring the light emission of the plasma. Here, the exposure times are set as t1 < t2 <... < t n The dark current waveforms are acquired when no plasma processing is performed in the plasma processing device 1.

[0070] (Step 602)

[0071] ​​Obtain n spectral waveforms D1 to D2 according to each of the n exposure times set in step 601. n The spectral waveforms were obtained during plasma processing in plasma processing apparatus 1.

[0072] (Step 603)

[0073] For each exposure time set in step 601, calculate the spectral waveforms D1 to D2 obtained in step 602. n Subtract the dark current waveforms C1 to C1 obtained in step 601 n The obtained spectral waveforms E1~E n .

[0074] (Step 604)

[0075] Set the initial value i for the number of repetitions from step 605 to step 607 to 1.

[0076] (Step 605)

[0077] If the spectral waveform E with the longest exposure time is calculated in step 603 n If there is no wavelength overscaled, proceed to step 608. Otherwise, proceed to step 606. Overscale is determined, for example, based on the performance of the beam splitter 13.

[0078] (Step 606)

[0079] In step 605, the luminescence intensity of the wavelength exceeding the range and its adjacent wavelengths is replaced by the spectral waveform E obtained by measurement with a shorter exposure time than the spectral waveform En. n-i Multiply the luminous intensity by t n / t n-i The value after range adjustment is used to create a new spectral waveform (also known as the third spectral waveform) E. n Here, the following calculation is performed: multiply the spectral waveform with a shorter exposure time than the over-range spectral waveform by the value obtained by dividing the exposure time of the over-range spectral waveform by the exposure time of the spectral waveform with a shorter exposure time than the over-range spectral waveform.

[0080] (Step 607)

[0081] Add 1 to the number of repetitions i and move to step 605. If there is no wavelength that exceeds the range, move to step 608.

[0082] (Step 608)

[0083] Register the types of gases used in the plasma treatment in the gas type column 21a, register the etched material used in the plasma treatment in the etched material column 21b, register the types of gases used in the plasma treatment and the components contained in the etched material in the component column 21c, and record the spectral waveform E generated in steps 605 to 607. n As spectral waveform B n Register the luminous intensity in column 21d for each wavelength.

[0084] Here, a specific example is given to illustrate the process from step 605 to step 607. Figure 7 This is an example of the spectral waveform E1 with the exposure time set to t1. Figure 8 Here is an example of the spectral waveform E2 with the exposure time set to t2. Figure 9 This is an example of a spectral waveform E3 with an exposure time set to t3. In this example, the exposure time is set to 3, but any number of exposure times is acceptable as long as there are 2 or more.

[0085] In step 605, when it is determined that... Figure 9 When the spectral waveform E3 shown is out of range near 810 nm, proceed to the next step 606.

[0086] In step 606, the luminescence intensity near 810 nm, which is beyond the range, is extracted from E2 and replaced by multiplying by t3 / t2 to generate a new spectral waveform E3. Then, the process returns to step 605 from the next step 607.

[0087] If the spectral waveform E3 generated in step 606 also exceeds the range, then the same processing is performed on the spectral waveform E1. This process is repeated from steps 605 to 607 until the new spectral waveform E3 no longer exceeds the range.

[0088] Figure 10 It is Figure 5 The diagram illustrates the detailed process flow of step 503 of the overall processing flow. The analysis unit 14 identifies the wavelength through the following actions. Additionally, the touch panel of the display unit 15 displays... Figure 16 The input screen shown allows operators to input information while looking at the displayed screen.

[0089] (Step 1001)

[0090] The operator Figure 16 The input screen shows the gas selected from the gas type field 1601 in the spectral waveform A obtained in step 502, and "○" is entered in the corresponding analysis object field 1602. This conveys to the analysis unit 14 the message that the gas for which "○" was entered in the analysis object field 1602 has been selected.

[0091] Likewise, the operator selects the etched material from the etched material column 1603, and inputs "0" in the analysis object column 1604s corresponding thereto. Thereby, the analysis section 14 is notified of information indicating that the etched material for which "0" is input in the analysis object column 1604 is selected. The selection of the etched material is not necessarily performed. After the selection, the operator can press the "display analysis result" button 1605. Thereby, the analysis section 14 is notified of information indicating that the input of the operator is completed.

[0092] (Step 1002)

[0093] If the analysis section 14 is notified of the information indicating that the input of the operator is completed, the analysis section 14 extracts data from the light emission intensity column 21d of each wavelength of the entire registration including the gas species selected in step 1001 in the gas species column 21a and the etched material selected in step 1001 in the etched material column 21b from the spectral waveform database 21, and transmits it to the spectral synthesis operation section 22.

[0094] (Step 1003)

[0095] Next, the analysis section 14 performs synthesis by multiplying the spectral waveforms extracted in step 1002 by the weight coefficient corresponding to each element or molecule respectively with the spectral synthesis operation section 22, thereby creating a spectral waveform B (also referred to as a second spectral waveform). For example, the spectral waveform B is calculated by the following mathematical expression 1. Here, B represents the synthesized spectral waveform, n represents the number of spectral waveforms subjected to the synthesis, B j represents the j-th spectral waveform, w j represents the weight coefficient multiplied on the j-th spectral waveform. Further, here, the weight coefficient w j is set to the same value in the entire spectral waveform, but the weight coefficient w j may be set to different values for each wavelength.

[0096]

Mathematical Expression 1

[0097]

[0098] (Step 1004)

[0099] Further, the analysis section 14 calculates the degree of coincidence by comparing the spectral waveform A obtained in step 502 and the spectral waveform B created in step 1003 with the degree of coincidence operation section 24. For example, the degree of coincidence is calculated by the following mathematical expression 2. Here, M represents the value of the degree of coincidence, m represents the number of wavelengths of the spectral waveform, and Ak and Bk represent the light emission intensity of the k-th wavelength of the spectral waveform A and the spectral waveform B. It is understood that the smaller the value of M, the more coincident the spectral waveform A and the spectral waveform B are.

[0100] [Math. 2]

[0101]

[0102] (Step 1005)

[0103] Since the value M of the degree of coincidence calculated in step 1004 is equal to or greater than the threshold value, it is indicated that the spectral waveform A and the spectral waveform B are not sufficiently coincident, and thus the flow is shifted to step 1006, and the analysis section 14 performs processing of the spectral waveform B.

[0104] (Step 1006)

[0105] The analysis section 14 creates a new spectral waveform B by changing the weight coefficient of each spectral waveform constituting the spectral waveform B through the spectral synthesis operation section 22. Here, the weight coefficient is changed, for example, using a gradient method or the like so that the value M of the degree of coincidence becomes smaller.

[0106] After that, the flow is shifted to step 1004, and the analysis section 14 recalculates the value M of the degree of coincidence using the new spectral waveform B, and compares the value M of the degree of coincidence with the threshold value in the next step 1005. In a case where the recalculated value M of the degree of coincidence is equal to or greater than the threshold value, the flow is shifted to step 1006, and the analysis section 14 calculates a new spectral waveform B, and performs the same processing in steps 1004 and 1005. On the other hand, in a case where the value M of the degree of coincidence is smaller than the threshold value in step 1005, the flow is shifted to step 1007.

[0107] (Step 1007)

[0108] The analysis section 14 acquires the registered peak wavelength of the data of the component column 21c containing the waveform constituting the spectral waveform B from the component wavelength database 25 through the wavelength recognition operation section 26, and acquires data of the emission intensity of each wavelength of the emission intensity column 21d of the spectral waveform database 21 with respect to the peak wavelength and the wavelength in the vicinity thereof. After the acquisition, the analysis section 14 calculates the contribution degree using the emission intensity of the peak wavelength and the weight coefficient of the waveform, and outputs the component name, the peak wavelength, and the contribution degree, and transmits them to the display section 15. The component name, the peak wavelength, and the contribution degree are information related to the kind of gas used in the plasma processing which is the analysis target and the component name of the etching material, and the component name and the contribution degree are displayed on the display section 15 for each peak wavelength. According to the related information, it is possible to determine the kind of gas used in the plasma processing which is the analysis target and the component name of the etching material.

[0109] For example, in a case where the spectral waveform B is a spectral waveform of a gas used in the plasma processing which is the analysis target, the component name of the gas is displayed on the display section 15. Figure 17In the display example of FIG. 6, in the peak waveform in which the peak wavelength is 294.9 nm, the contribution degree of N2 is 95%, and the contribution degree of CO2 is 5%. Further, in the peak waveform in which the peak wavelength is 750.7 nm, the contribution degree of Ar is 80%, and the contribution degree of N2 is 20%. Furthermore, in the peak waveform in which the peak wavelength is 811.0 nm, the contribution degree of Ar is 100%. That is, it is known that, in the processing chamber in which the plasma processing of the analysis target is performed, CO2 and N2 are included in addition to the input gas species.

[0110] For example, the contribution degree is calculated by mathematical expression 3 as follows. Here, C represents the contribution degree, w represents the weight coefficient, p represents the number of wavelengths near the peak wavelength, W1 represents the first wavelength, and I1 represents the emission intensity of the first wavelength.

[0111] [mathematical expression 3]

[0112]

[0113] In addition, the calculation of the value M of the agreement degree shown in mathematical expression 2 can be performed for each peak waveform (peak wavelength and wavelengths near the peak wavelength) together with the calculation of the contribution degree, and the peak waveform having a low value M of the agreement degree can be excluded from the recognition result, thereby improving the accuracy of the recognition.

[0114] Figure 14 FIG. 6 is a graph showing an example of a fitting result of a spectrum waveform of an analysis target and a spectrum waveform in which spectrum waveforms of a database are synthesized. The solid line in the graph is a spectrum waveform of a mixed gas of Ar + N2 + CO2, and the broken line in the graph represents a waveform in which the spectrum waveforms of Ar, Figure 11 Figure 12 Figure 13

[0115] Figure 11 Figure 12 Figure 13 Figure 14 Figure 14

[0116] Figure 14 ​​​​​​​​​On both the solid and dashed lines, there are inconsistent peaks around 380 nm to 390 nm. These are CN peaks, which are substances generated in plasmas containing a mixture of N2 and CO2, but not in plasmas containing only N2 or only CO2. Therefore, in the spectral waveform database 21, which is based solely on individual gases, there are no waveforms with CN peaks. Thus, to improve identification accuracy, inconsistent peaks can be extracted, newly designated as CN waveforms, and registered in the spectral waveform database 21.

[0117] Figure 15 It means to Figure 14 The graph shows the fitting results of the spectrum waveforms of synthesized Cl2 and CF4, represented by dashed lines. Figure 15 The solid line is an example of the following situation: due to the... Figure 14 The spectral waveform of the same Ar+N2+CO2 gas mixture was used, so instead of selecting Ar, N2, and CO2 as the gas types, Cl2 and CF4 were chosen. In this case, since the spectral waveform could not be fitted even after adjusting the weights, this embodiment can suppress erroneous wavelength identification.

[0118] [Implementation Method 2]

[0119] In this embodiment, the selection of components can also be replaced by the operator, such as... Figure 18 As shown, a component selection unit 1801 is provided in the analysis unit 14 to automatically select components. Therefore, in this embodiment, it is no longer necessary to... Figure 16 The input screen.

[0120] The component selection unit 1801 can select components by referring to the calculation results of the consistency calculation unit 24, so as to obtain good results. For example, by equipping the component selection unit 1801 with deep learning capabilities, the best components can be selected even without processing all the data.

[0121] Figure 19 This is a diagram illustrating the processing flow of the analysis unit 14 in this embodiment. Only diagrams related to... Figure 10 The processing flow has different steps.

[0122] (Step 1001)

[0123] The component selection unit 1801 selects the types of gases contained in the spectral waveform A obtained in step 502 and the material to be etched.

[0124] (Step 1901)

[0125] In a case where the amount of change in the degree of agreement calculated in step 1004 is below a given value, the process moves to step 1001, and the analysis section 14 reselects the components again. Thereafter, until the amount of change in the degree of agreement exceeds the given value, the analysis section 14 performs the same processing.

[0126] Thus, according to the analysis section 14 of the present embodiment, by automatically performing selection of components, the work burden of the operator is reduced, and human errors such as component selection errors can be prevented, so that the accuracy of wavelength recognition can be improved.

[0127] In addition, the present application is not limited to the above-described embodiments, and various modifications are included. For example, the above-described embodiments are described in detail in order to easily understand the present application, but are not necessarily limited to all the structures described. Furthermore, a part of the structure of one embodiment can be replaced with the structure of another embodiment, and furthermore, the structure of one embodiment can be added with the structure of another embodiment. Furthermore, a part of the structure of each embodiment can be added, deleted, or replaced with another structure.

[0128] Furthermore, as an application example of the described embodiments, a semiconductor device manufacturing system that executes an application for performing operation management of a production line including a semiconductor manufacturing device on a platform is considered. In this case, by causing the analysis processing function of the analysis section 14 to perform processing as an application on the platform, the present embodiment can be applied to the above-described semiconductor device manufacturing system.

[0129] Furthermore, a part or all of each of the above-described structures, functions, processing sections, processing means, and the like can be realized in software by, for example, a program executed by a processor to realize each function. The program, table, file, and the like that realize each function can be stored in a memory, a hard disk, an SSD (Solid State Drive), or the like, or an IC card, an SD card, a DVD, or the like.

[0130] Explanation of Reference Signs

[0131] 1...plasma processing device

[0132] 2...processing chamber

[0133] 3...mass flow controller

[0134] 4...high-frequency power supply for plasma generation

[0135] 5...exhaust device

[0136] 6...wafer

[0137] 7...sample stage

[0138] 8...plasma

[0139] 9…high frequency power source for bias

[0140] 10…pressure gauge

[0141] 11…variable conductance valve

[0142] 12…observation window

[0143] 13…optical splitter

[0144] 14…analysis section

[0145] 15…display section

[0146] 21…spectrum waveform database

[0147] 22…spectrum synthesis operation section

[0148] 23…spectrum storage section

[0149] 24…degree of agreement operation section

[0150] 25…component wavelength database (element or molecule wavelength database)

[0151] 26…wavelength identification operation section

[0152] 1601…gas type column

[0153] 1602…analysis target column

[0154] 1603…material to be etched column

[0155] 1604…analysis target column

[0156] 1605…button

[0157] 1801…component selection section (element or molecule selection section)

Claims

1. A plasma processing apparatus comprising: a processing chamber that performs plasma processing on a sample; a high-frequency power source that supplies high-frequency electric power for generating a plasma; and a sample stage that holds the sample, the plasma processing apparatus characterized by further comprising: an analysis section that determines an element or a molecule in the plasma being monitored based on a degree of coincidence of a first spectral waveform and a second spectral waveform of a spectrum waveform of light emission of the plasma being monitored, the first spectral waveform and the second spectral waveform being obtained by comparing the first spectral waveform and the second spectral waveform, the second spectral waveform being a spectral waveform corresponding to the element or the molecule and multiplied by a weight coefficient.

2. The plasma processing apparatus according to claim 1, wherein, in a case where the degree of coincidence is less than a threshold value, information relating to the element or the molecule is output by the analysis section.

3. The plasma processing apparatus according to claim 1, wherein the weight coefficient is adjusted by the analysis section so that the degree of coincidence becomes smaller.

4. The plasma processing apparatus according to claim 1, wherein, in a case where the degree of coincidence is less than a threshold value, a peak wavelength of the second spectral waveform is extracted by the analysis section, and a contribution degree is calculated based on an emission intensity of the extracted peak wavelength and a weight coefficient, the contribution degree being an index indicating a magnitude of each of the elements or each of the molecules in the emission intensity of the extracted peak wavelength.

5. The plasma processing apparatus according to claim 4, further comprising: a display section that displays the element or the molecule and the contribution degree for each of the peak wavelengths.

6. The plasma processing apparatus according to claim 1, further comprising: a spectrometer that outputs data of light emission of the plasma being monitored, the intensity of light emission of the plasma being adjusted by an exposure time, wherein, in a case where an emission intensity at a wavelength of a part of the second spectral waveform is overrange, the second spectral waveform of the overrange is replaced with a third spectral waveform by the analysis section, the third spectral waveform being a spectral waveform obtained by calculating the second spectral waveform with a shorter exposure time than the second spectral waveform of the overrange, the calculation being a calculation of multiplying a value obtained by dividing an exposure time of the second spectral waveform of the overrange by an exposure time of the second spectral waveform with a shorter exposure time than the second spectral waveform of the overrange on the second spectral waveform with a shorter exposure time than the second spectral waveform of the overrange.

7. The plasma processing apparatus according to claim 1, wherein the analysis section comprises a component selection section that selects an element or a molecule based on the degree of coincidence. Further comprising: an analysis section that determines an element or a molecule in the plasma being monitored based on a degree of coincidence of a first spectral waveform and a second spectral waveform of a spectrum waveform of light emission of the plasma being monitored, the first spectral waveform and the second spectral waveform being obtained by comparing the first spectral waveform and the second spectral waveform, the second spectral waveform being a spectral waveform corresponding to the element or the molecule and multiplied by a weight coefficient. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 8. A data parsing device, characterized by comprising: ​ ​ The second spectral waveform is a spectral waveform corresponding to the element or molecule in the plasma multiplied by a weight coefficient.

9. A semiconductor device manufacturing system comprising: a platform connected to a semiconductor manufacturing device via a network, which executes an analysis process of determining an element or molecule in a plasma, the semiconductor device manufacturing system characterized in that the analysis process has the following steps: determining an element or molecule in the monitored plasma according to a degree of coincidence of a first spectral waveform and a second spectral waveform obtained by comparing the first spectral waveform and the second spectral waveform of a spectrum of light emitted by the monitored plasma, the second spectral waveform is a spectral waveform corresponding to the element or molecule in the plasma multiplied by a weight coefficient.

10. The semiconductor device manufacturing system according to claim 9, characterized in that the analysis process is executed as an application provided in the platform.

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