Polishing pad and method of manufacturing semiconductor device using the same

Abstract

Provided are a polishing pad and a method of manufacturing a semiconductor device using the same, the polishing pad having a structure that maximizes a water leakage prevention effect, including: a polishing layer including a first surface and a second surface, and a first through-hole passing through the first surface to the second surface; a window disposed in the first through-hole; and a support layer disposed on the second surface side of the polishing layer, including a third surface and a fourth surface, and a second through-hole passing through the third surface to the fourth surface while being connected to the first through-hole, the second through-hole being smaller than the first through-hole, a lowermost end surface of the window being supported by the third surface, a first adhesive layer being included between the lowermost end surface of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end surface of the window and the third surface, a barrier layer being included on one surface of the second adhesive layer, and the support layer including a compression portion in a region corresponding to the lowermost end surface of the window.

Description

Technical Field

[0001] This invention relates to a polishing pad used as part of the chemical mechanical planarization process of a semiconductor substrate in the manufacturing process of a semiconductor device, and a method for manufacturing a semiconductor device using the polishing pad. Background Technology

[0002] Chemical mechanical planarization (CMP) or chemical mechanical polishing (CMP) processes can be used for various purposes in a variety of technical fields. CMP processes are performed on a specified surface of the object to be polished and can be used to planarize the surface, remove aggregated substances, resolve lattice damage, and remove scratches and contaminants, among other things.

[0003] CMP (Chemical Motion Processing) technology in semiconductor manufacturing can be classified according to the membrane material being polished or the shape of the surface after polishing. For example, it can be categorized by the membrane material being polished into single-crystal silicon or polycrystalline silicon, or by the type of impurities into various oxide films or metal films such as tungsten (W), copper (Cu), aluminum (Al), ruthenium (Ru), and tantalum (Ta). Furthermore, it can be categorized by the shape of the polished surface into processes for improving substrate surface roughness, processes for planarizing height differences caused by multilayer circuit wiring, and device separation processes for selectively forming circuit wiring after polishing.

[0004] CMP (Chemical Motion Processing) can be applied multiple times during the manufacturing of semiconductor devices. Semiconductor devices consist of multiple layers, each containing complex and intricate circuit patterns. Furthermore, in recent semiconductor devices, the size of individual chips has decreased, and the patterns of each layer have evolved towards greater complexity and finer detail. Therefore, the purpose of CMP in semiconductor device manufacturing has expanded beyond just planarizing circuit traces to include routing, separation of circuit traces, and improvement of trace surfaces, resulting in demands for more precise and reliable CMP performance.

[0005] The polishing pad used in the CMP process is a component used in the process to process the surface to be polished to the desired level through friction. It can be regarded as one of the most important factors in terms of the thickness uniformity of the polished object, the flatness of the polished surface, and the polishing quality. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One implementation aims to provide a polishing pad that minimizes leakage in a polishing pad that forms a water-permeable path through the interface between the window and the polishing pad, achieving excellent long-term durability without leakage even when applied to the polishing process for a substantially long time.

[0008] Another implementation example, as a method for manufacturing a semiconductor device using the polishing pad, aims to provide a method that combines a specific structure of the application window of the polishing pad with optimal process conditions for the polishing process, thereby further improving process efficiency and enabling the manufacture of semiconductor devices that ensure excellent quality in terms of polishing rate, polishing flatness, and defect prevention.

[0009] means for solving problems

[0010] In one embodiment, a polishing pad is provided, comprising: a polishing layer including a first surface as a polishing surface and a second surface as the opposite surface of the first surface, including a first through hole extending from the first surface to the second surface; a window disposed within the first through hole; and a support layer disposed on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as the opposite surface of the third surface, including a second through hole extending from the third surface to the fourth surface and connected to the first through hole, the second through hole being smaller than the first through hole, the lowermost end face of the window being supported by the third surface, a first adhesive layer being included between the lowermost end face of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end face of the window and the third surface, a barrier layer being included on one surface of the second adhesive layer, and the support layer including a compression portion in the region corresponding to the lowermost end face of the window.

[0011] The first adhesive layer may contain a water-curing resin, and the second adhesive layer may contain a thermoplastic resin.

[0012] The first adhesive layer may not be disposed between the side of the first through hole and the side of the window.

[0013] The first adhesive layer may also be disposed between the side of the first through hole and the side of the window.

[0014] The barrier layer may comprise one of the following: resin film, metal-deposited resin film, inorganic film-deposited resin film, hydrophobic barrier coating resin film, particle-dispersed resin film, inorganic film, metal film, and combinations thereof.

[0015] The support layer includes non-compressible portions in areas other than the compressed portions, and the percentage of the thickness of the compressed portions relative to the thickness of the non-compressible portions can be from 0.01% to 80%.

[0016] The first surface includes at least one groove, the depth of which can be from 100 μm to 1500 μm and the width from 0.1 mm to 20 mm.

[0017] The first surface includes a plurality of grooves, the plurality of grooves including concentric circular grooves, the interval between two adjacent concentric circular grooves being 2 mm to 70 mm.

[0018] The bottom edge of the window may include a recess.

[0019] The depth of the recess can be from 0.1 mm to 2.5 mm.

[0020] The window comprises a non-foamed cured product of a window composition containing a first urethane-based prepolymer, and the polishing layer may comprise a foamed cured product of a polishing layer composition containing a second urethane-based prepolymer.

[0021] The Shore D hardness measured on the first surface under normal temperature and dry conditions can be less than the Shore D hardness measured on the uppermost surface of the window under normal temperature and dry conditions.

[0022] In another embodiment, a method for manufacturing a semiconductor device is provided, comprising: providing a polishing pad having a polishing layer, the polishing layer including a first surface as a polishing surface and a second surface as an opposite surface of the first surface, including a first through-hole extending from the first surface to the second surface, including a window disposed within the first through-hole; and configuring the first surface and the surface to be polished of a polishing object to contact each other, and then polishing the polishing object while rotating the polishing pad and the polishing object relative to each other under pressure, the polishing object including a semiconductor substrate, and the polishing pad further including the second surface side of the polishing layer. The support layer includes a third surface on the polished layer side and a fourth surface as the opposite side of the third surface, and includes a second through hole extending from the third surface to the fourth surface and connected to the first through hole. The second through hole is smaller than the first through hole. The lowermost end face of the window is supported by the third surface. A first adhesive layer is included between the lowermost end face of the window and the third surface. A second adhesive layer is included between the second surface and the third surface and between the lowermost end face of the window and the third surface. A barrier layer is included on one surface of the second adhesive layer. The support layer includes a compression portion in the region corresponding to the lowermost end face of the window.

[0023] The method for manufacturing the semiconductor device may further include the step of supplying a polishing slurry on the first surface.

[0024] The polishing slurry is sprayed onto the first surface through a supply nozzle, and the flow rate of the polishing slurry sprayed through the supply nozzle can be from 10 mL / min to 1,000 mL / min.

[0025] The rotational speeds of the polishing object and the polishing pad can be from 10 rpm to 500 rpm, respectively.

[0026] Invention Effects

[0027] The polishing pad minimizes leakage of liquid components through the interface between the window and the polishing pad by combining a multi-level adhesive layer structure, a compression structure, and a barrier layer, and achieves excellent long-term durability without leakage, even when used in polishing processes for substantially long periods of time.

[0028] In the method for manufacturing the semiconductor device, the specific structure of the application window of the aforementioned polishing pad is combined with the optimal process conditions for the polishing process to further improve process efficiency and ensure excellent quality in terms of polishing rate, polishing flatness, and defect prevention. Attached Figure Description

[0029] Figure 1 This is a top view of a polishing pad used in an implementation example.

[0030] Figure 2 It is shown in a general way. Figure 1 A cross-sectional view of the X-X' section in one implementation example of a polishing pad.

[0031] Figure 3 This is a schematic cross-sectional view of a polishing pad for another implementation example.

[0032] Figure 4 This is an enlarged view of the above. Figure 2 A schematic diagram of part B.

[0033] Figure 5 This is an enlarged view of the above. Figure 2 A schematic diagram of part A.

[0034] Figure 6 This is a schematic diagram showing a cross-section of a polishing pad in yet another implementation example.

[0035] Figure 7 The diagram schematically illustrates the air leakage measurement process of the polishing pad.

[0036] Figure 8 This is a schematic diagram that schematically illustrates a method for manufacturing the semiconductor device according to one implementation example. Detailed Implementation

[0037] The advantages, features, and implementation methods of the present invention will become clear when referring to the embodiments. However, the present invention is not limited to the embodiments disclosed below, but is implemented in various ways that differ from each other. These embodiments are provided only to make the disclosure of the present invention more complete and to enable those skilled in the art to fully understand the scope of the present invention, and the present invention is defined only by the scope of the claims.

[0038] In the accompanying drawings, the thicknesses are enlarged and shown to clearly illustrate the various layers and regions. Furthermore, for ease of explanation, the thicknesses of some layers and regions are exaggerated in the drawings. Throughout the specification, the same reference numerals denote the same constituent elements.

[0039] Furthermore, in this specification, when a part referred to as a layer, film, region, plate, etc., is located "above," "over," or "upper" another part, this includes not only the case where it is directly "above" the other part, but also the case where there are other parts in between. Conversely, when a part is referred to as being directly "above" another part, it means that there are no other parts in between. Similarly, when a part referred to as a layer, film, region, plate, etc., is located "below" or "lower" of another part, this includes not only the case where it is directly "below" the other part, but also the case where there are other parts in between. Conversely, when a part is referred to as being directly "below" another part, it means that there are no other parts in between.

[0040] In this specification, modifiers such as "first" or "second" are used to distinguish cases with different superordinate structures. Such modifiers do not imply that the constituent parts are specifically different kinds.

[0041] The following will describe in detail the implementation examples of the present invention.

[0042] In one embodiment of the present invention, a polishing pad is provided, comprising: a polishing layer including a first surface as a polishing surface and a second surface as the opposite surface of the first surface, including a first through hole extending from the first surface to the second surface; a window disposed within the first through hole; and a support layer disposed on the second surface side of the polishing layer, including a third surface on the polishing layer side and a fourth surface as the opposite surface of the third surface, including a second through hole extending from the third surface to the fourth surface and connected to the first through hole, the second through hole being smaller than the first through hole, the lowermost end face of the window being supported by the third surface, a first adhesive layer being included between the lowermost end face of the window and the third surface, a second adhesive layer being included between the second surface and the third surface and between the lowermost end face of the window and the third surface, a barrier layer being included on one surface of the second adhesive layer, and the support layer including a compression portion in the region corresponding to the lowermost end face of the window.

[0043] Polishing pads are essential auxiliary materials in polishing processes requiring surface planarization, and are particularly important components in semiconductor device manufacturing. The purpose of polishing pads is to planarize uneven structures, facilitating subsequent processing such as removing surface defects. While polishing is applied in other technical fields besides semiconductors, the precision required for polishing in semiconductor manufacturing is considered the highest compared to other fields. In recent years, considering the trend towards high integration and miniaturization in semiconductor devices, even very small errors in the polishing process can significantly degrade the overall quality of semiconductor devices. Therefore, for fine control of the polishing process, polishing endpoint detection technology has been introduced to terminate polishing when the semiconductor substrate has been accurately polished to the desired degree.

[0044] Figure 1 This is a schematic top view of a polishing pad 100 in one implementation example. (Refer to...) Figure 1The polishing pad 100 may include a window 102. Specifically, the polishing pad 100 can determine the polishing endpoint by introducing a window 102 that is generally opaque but locally transparent, using light signals such as lasers to detect changes in the film. This endpoint detection window 102 is a component composed of materials and properties different from the basic materials and properties of the polishing layer that make up the polishing pad 100. After this component is introduced, it forms a portion with local heterogeneity on the polishing surface of the polishing layer. Since the entire polishing surface of the polishing pad, including the uppermost surface of the window, is used in the polishing of semiconductor substrates, minimizing the adverse effects of the local heterogeneity of the window introduction portion on the polishing of the semiconductor substrate can be an important factor in determining the quality of semiconductor devices.

[0045] Based on this viewpoint, the polishing pad 100 of one embodiment applies specific structural features in terms of the introduction of the window 102, thereby enabling it to function as a process component that can manufacture excellent semiconductor devices by minimizing the adverse factors related to the local heterogeneity of the introduction portion of the window 102 while ensuring the process advantages of the window 102.

[0046] Figure 2 This is a schematic cross-sectional view of the polishing pad 100 of one implementation example; more specifically, it is a schematic view of the polishing pad 100 of one implementation example. Figure 1 The X-X' section. (Refer to...) Figure 2 The polishing pad 100 includes a polishing layer 10, which includes a first surface 11 serving as a polishing surface and a second surface 12 serving as the opposite surface of the first surface 11. Additionally, the polishing layer 10 includes a first through-hole 101 extending from the first surface 11 to the second surface 12, and a window 102 is disposed within the first through-hole 101.

[0047] Additionally, the polishing pad 100 further includes a support layer 20 disposed on the side of the second surface 12 of the polishing layer 10. The support layer 20 includes a third surface 21 on the side of the polishing layer 10 and a fourth surface 22 opposite to the third surface 21, and includes a second through-hole 201 extending from the third surface 21 to the fourth surface 22 and connecting to the first through-hole 101. Since the second through-hole 201 is formed in a manner connected to the first through-hole 101, the polishing pad 100 includes a light-pass extending through its entire thickness from its uppermost end face to its lowermost end face, thereby enabling the effective application of optical endpoint detection methods through the window 102.

[0048] In the polishing pad 100, the second through-hole 201 is smaller than the first through-hole 101, and the lowermost end face of the window 102 can be supported by the third surface 21. Since the second through-hole 201 is formed smaller than the first through-hole 101, a support surface capable of supporting the window 102 is formed on the third surface 21. At this time, a first adhesive layer 30 is included between the lowermost end face of the window and the third surface 21. Furthermore, a second adhesive layer 40 is included between the second surface 12 and the third surface 21, and between the lowermost end face of the window and the third surface 21. Additionally, a barrier layer 50 is included on one surface of the second adhesive layer 40. Thus, a multi-level adhesive layer containing the first adhesive layer 30 and the second adhesive layer 40, and a barrier layer 50 are included between the lowermost end face of the window and the third surface 21. This multi-level adhesive layer and barrier layer stacked structure greatly improves the water leakage prevention effect. Specifically, during the polishing process using the polishing pad 100, a fluid such as liquid slurry is supplied to the polishing surface 11. At this time, components originating from this fluid may flow into the interface between the side of the window 102 and the side of the first through-hole 101. If fluid components permeating in this way flow into the polishing device at the lower end of the polishing pad 100 via the second through-hole 201, it may cause malfunction of the polishing device or hinder accurate end-point detection of the window 102. Based on this viewpoint, the polishing pad 100 is formed such that the second through-hole 201 is smaller than the first through-hole 101, thereby ensuring a support surface for the window 102 on the third surface 21. Simultaneously, a multi-level adhesive layer and barrier layer stacked structure including the first adhesive layer 30 and the second adhesive layer 40 is formed on the support surface, thereby significantly improving the leakage prevention effect.

[0049] In one implementation, the barrier layer 50 is used as a thin film with low water permeability, together with the multi-level adhesive layer structure of the first adhesive layer 30 and the second adhesive layer 40, thereby helping to maximize the water leakage prevention effect of the polishing pad 100.

[0050] In one implementation, the barrier layer 50 may include one selected from the group consisting of resin films, metal-deposited resin films, inorganic film-deposited resin films, hydrophobic barrier coating resin films, particle-dispersed resin films, inorganic films, metal films, and combinations thereof.

[0051] In one implementation, the moisture permeability of the barrier layer 50 can be less than about 45 g / m³. 2 / day, for example, can be less than about 40g / m 2 / day, for example, can be less than about 30g / m 2 / day, for example, can be less than about 25g / m 2 / day, for example, can be less than about 10g / m 2 / day, for example, can be approximately 0g / m 2 / day to approximately 40g / m 2 / day, for example, can be approximately 0g / m 2 / day to approximately 30g / m 2 / day, for example, can be approximately 0g / m 2 / day to approximately 25g / m 2 / day, for example, can be approximately 0g / m 2 / day to approximately 10g / m 2 / day. Since the moisture permeability of the barrier layer 50 meets the aforementioned range, the water leakage prevention effect of the polishing pad 100 can be greatly improved.

[0052] In one implementation, the thickness of the barrier layer 50 can be from about 5 μm to about 50 μm, for example, from about 5 μm to about 40 μm, from about 10 μm to about 30 μm, from about 10 μm to about 25 μm, or from about 10 μm to about 20 μm. Since the thickness of the barrier layer 50 meets the aforementioned range, the overall thickness of the polishing pad 100 is appropriately ensured while maintaining effective moisture prevention, thereby without reducing process efficiency. Furthermore, the barrier layer 50 achieves excellent durability based on stable adhesion to the second adhesive layer 40 and the support layer 20 disposed on its two surfaces.

[0053] In one implementation, the density of the barrier layer 50 may be approximately 0.8 g / cm³. 3 Approximately 2.0 g / cm³ 3 For example, it can be approximately 0.8 g / cm³. 3 Approximately 1.8 g / cm³ 3 For example, it can be approximately 1.0 g / cm³. 3 Approximately 1.8 g / cm³ 3 For example, it can be approximately 1.2 g / cm³. 3 Approximately 1.6 g / cm³ 3 Because it meets the aforementioned density range, the barrier layer 50 can help achieve the water leakage prevention effect of the polishing pad 100, and can further help ensure mechanical durability between the second adhesive layer 40 and the support layer 20 disposed on both surfaces of the barrier layer 50.

[0054] In one implementation, the tensile strength of the barrier layer 50 can be approximately 10 kgf / mm². 2 Approximately 50 kgf / mm2 For example, it can be approximately 10 kgf / mm 2 Approximately 45 kgf / mm 2 For example, it can be approximately 15 kgf / mm 2 Approximately 45 kgf / mm 2 For example, it can be approximately 20 kgf / mm 2 Approximately 40 kgf / mm 2 Due to its aforementioned tensile strength, the barrier layer 50 can improve the water leakage prevention effect while also enhancing the durability of the polishing pad 100 and increasing the efficiency of the process of introducing the barrier layer 50.

[0055] In one implementation, the elongation of the barrier layer 50 can be from about 100% to about 160%, for example, from about 100% to about 150%, from about 105% to about 150%, or from about 110% to about 150%. Due to the aforementioned tensile strength, the barrier layer 50 can improve the durability of the polishing pad 100 while enhancing the water leakage prevention effect, and can also improve the efficiency of the process of introducing the barrier layer 50.

[0056] For example, the resin film may comprise one selected from the group consisting of polyester, polyamide (PA), polyketone, polysulfone, polycarbonate, fluoropolymer, polyacrylate, copolyetherester, copolyetheramide, polyurethane, polyvinyl chloride, polytetrafluoroethylene, polyolefin, polyethylene terephthalate (PET), polypropylene (PP), nylon (PA), and combinations thereof.

[0057] For example, the metal-deposited resin film may include: a resin layer, which may comprise one selected from the group consisting of polyester, polyamide (PA), polyketone, polysulfone, polycarbonate, fluoropolymer, polyacrylate, copolyetherester, copolyetheramide, polyurethane, polyvinyl chloride, polytetrafluoroethylene, polyolefin, polyethylene terephthalate (PET), polypropylene (PP), nylon (PA), and combinations thereof; and a metal layer deposited on the resin layer. For example, the metal layer may comprise one selected from the group consisting of aluminum (Al), zinc (Zn), tin (Sn), stainless steel, titanium (Ti), and combinations thereof.

[0058] For example, the inorganic film deposition resin film may include: a resin layer comprising one selected from the group consisting of polyester, polyamide (PA), polyketone, polysulfone, polycarbonate, fluoropolymer, polyacrylate, copolyetherester, copolyetheramide, polyurethane, polyvinyl chloride, polytetrafluoroethylene, polyolefin, polyethylene terephthalate (PET), polypropylene (PP), nylon (PA), and combinations thereof; and an inorganic film layer deposited on the resin layer. For example, the inorganic film layer may comprise one selected from silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ), aluminum oxide (Al x O y ), aluminum nitride (Al) x N y Nickel oxide (NiO) x), cobalt oxide (CoO) x Magnesium oxide (MgO), titanium oxide (TiO) x ) and their combinations are one of the groups.

[0059] For example, the hydrophobic barrier coating resin film may include: a resin layer comprising one selected from the group consisting of polyester, polyamide (PA), polyketone, polysulfone, polycarbonate, fluoropolymer, polyacrylate, copolyetherester, copolyetheramide, polyurethane, polyvinyl chloride, polytetrafluoroethylene, polyolefin, polyethylene terephthalate (PET), polypropylene (PP), nylon (PA), and combinations thereof; and a coating on the resin layer. For example, the coating may comprise one selected from the group consisting of polyvinylidene chloride (PVDC), ethylene vinyl alcohol copolymer (EVOH), and combinations thereof.

[0060] In one implementation, the thickness of the resin layer for each of the metal-deposited resin films, inorganic-deposited resin films, or hydrophobic barrier coating resin films can be from about 4.5 μm to about 45 μm, for example, from about 4.5 μm to about 30 μm, for example, from about 4.5 μm to about 20 μm, for example, from about 4.5 μm to about 15 μm, for example, from about 4.5 μm to about 12 μm.

[0061] In the hydrophobic barrier coating resin film, the thickness of the coating may be, for example, from about 0.5 μm to about 5 μm, or from about 0.5 μm to about 4.5 μm, or from about 0.5 μm to about 3 μm.

[0062] In the metal-deposited resin film, the thickness of the metal layer may, for example, be from about 0.01 μm to about 0.5 μm, or from about 0.01 μm to about 0.3 μm, or from about 0.01 μm to about 0.1 μm.

[0063] In the inorganic film deposition resin film, the thickness of the inorganic film may be, for example, from about 0.01 μm to about 0.5 μm, for example, from about 0.01 μm to about 0.3 μm, for example, from about 0.01 μm to about 0.1 μm.

[0064] For example, the particle-dispersed resin film may include: a resin layer comprising one selected from the group consisting of polyester, polyamide (PA), polyketone, polysulfone, polycarbonate, fluoropolymer, polyacrylate, copolyetherester, copolyetheramide, polyurethane, polyvinyl chloride, polytetrafluoroethylene, polyolefin, polyethylene terephthalate (PET), polypropylene (PP), nylon (PA), and combinations thereof; and particles dispersed in the resin layer. For example, the particles may include those selected from titanium oxide (TiO2). x It is one of the following groups: polyurethane, calcium carbonate, graphene, fullerene, carbon nanotube, mica, montmorillonite, saponite, hectorite, vermiculite, and combinations thereof.

[0065] For example, the inorganic membrane may contain silicon oxide (SiO2) selected from silicon oxide. x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ), aluminum oxide (Al x O y ), aluminum nitride (Al) x N y Nickel oxide (NiO) x ), cobalt oxide (CoO) x Magnesium oxide (MgO), titanium oxide (TiO) x ) and their combinations are one of the groups.

[0066] For example, the metal film may comprise one of the following: aluminum (Al), zinc (Zn), tin (Sn), stainless steel, titanium (Ti), and combinations thereof.

[0067] In one implementation, the barrier layer may include a hydrophobic barrier coating resin film or a metal-deposited resin film. For example, the hydrophobic barrier coating resin film may comprise a polyethylene terephthalate (PET) resin layer and a polyvinylidene chloride (PVDC) coating on the resin layer. Similarly, the metal-deposited resin film may comprise a polyethylene terephthalate (PET) resin layer and an aluminum (Al) deposition layer on the resin layer.

[0068] To maximize the water leakage prevention effect, the polishing pad 100 partially includes a compressed region (CR) in the support layer 20. Specifically, refer to... Figure 2 The compression portion CR is formed in the region of the support layer 20 corresponding to the lowermost end face of the window 102. Here, the region corresponding to the lowermost end face of the window 102 refers to a defined area in the support layer 20 that includes the portion corresponding to the lowermost end face of the window 102; the extension line of the side of the window 102 does not necessarily coincide with the inner end of the compression portion CR. That is, the compression portion CR only needs to be formed in the defined area so that it includes all portions corresponding to the lowermost end face of the window 102 extending from the side of the second through hole 201 into the interior of the support layer 20.

[0069] In one implementation, the compression section CR can have a continuous structure, such that it includes all portions corresponding to the lowermost end face of the window 102 along the direction from the side of the second through hole 201 toward the interior of the support layer. Alternatively, the compression section CR can be a continuous compression region including all portions corresponding to the lowermost end face of the window 102, and may not include two or more compression regions divided by the non-compression section NCR. Yet another option is that the compression section CR can be an integrally formed continuous compression region, including all portions corresponding to the lowermost end face of the window 102. That is, the compression section CR is an integrally formed continuous compression region that is pressurized on the fourth surface 22 side, which is the lower surface of the support layer 20, and does not include two or more compression regions with different pressurization directions during formation. In this way, not only can process efficiency be maximized, but the high-density area formed by the pressurization process can also be more advantageous in improving the leakage prevention effect.

[0070] As described above, since a compression portion CR is formed in the region of the support layer 20 corresponding to the lowermost end face of the window 102, the compression portion CR can form a high-density region relative to the non-compression region (NCR). In this way, it can work together with the multi-level adhesive layer to effectively prevent fluid components that may flow into the interface between the side of the window 102 and the side of the first through-hole 101. As a result, the polishing pad 100 in one embodiment can achieve an organic combination of the multi-level adhesive layer structure between the lowermost end face of the window 102 and the third surface 21 with the compression portion CR structure of the support layer 20, thereby significantly improving the leakage prevention effect compared to the prior art.

[0071] In one embodiment, the first adhesive layer 30 may comprise a water-curing resin, and the second adhesive layer 40 may comprise a thermoplastic resin. In another embodiment, the first adhesive layer 30 and the second adhesive layer 40 may be sequentially arranged from the lowermost end face of the window 102 toward the third surface 21. The first adhesive layer 30 is the first adhesive layer to which the fluid components leaking from between the side of the window 102 and the side of the first through-hole 101 come into contact. Since the first adhesive layer 30 comprises a water-curing resin, it can greatly improve the leakage prevention effect. The second adhesive layer 40 is also one of a multi-level adhesive layer structure between the lowermost end face of the window 102 and the third surface 21. It is also a layer disposed between the second surface 12 and the third surface 21 for attaching the polishing layer 10 and the barrier layer 50. Since the second adhesive layer 40 comprises a thermoplastic resin, it can be laminated together with the first adhesive layer 30 to improve the leakage prevention effect while ensuring excellent interface durability between the polishing layer 10 and the barrier layer 50.

[0072] The first adhesive layer 30 may comprise a water-cured product containing a water-curing adhesive composition of a urethane-based prepolymer, wherein the urethane-based prepolymer is polymerized from monomer components comprising aromatic diisocyanates and polyols. "Water-curing" refers to the property of water acting as a curing initiator, and the water-curing adhesive composition refers to an adhesive composition in which moisture in the air acts as a curing initiator. In this specification, "prepolymer" refers to a low-molecular-weight polymer whose degree of polymerization is interrupted at an intermediate stage during the manufacture of a cured product to facilitate molding. The prepolymer itself may undergo additional curing processes such as heating and / or pressurization, or may be mixed with other polymeric compounds, such as different types of monomers or different types of prepolymers, to finally be molded into a cured product.

[0073] Since the first adhesive layer 30 is derived from a water-curing adhesive composition containing a urethane-based prepolymer formed by polymerization of the monomer components, it is possible to greatly improve the interfacial adhesion between the window 102 and the first adhesive layer 30, while also significantly improving the leakage prevention effect based on the excellent compatibility between the first adhesive layer 30 and the second adhesive layer 40.

[0074] More specifically, the first adhesive layer 30 may comprise a water-cured product of a water-curing adhesive composition comprising: an urethane-based prepolymer formed by polymerization of monomer components comprising an aromatic diisocyanate of Formula 1 and a diol having 2 to 10 carbon atoms; and an unreacted aromatic diisocyanate of Formula 1.

[0075] [Chemical Formula 1]

[0076]

[0077] For example, the monomer component may contain a diol having 2 to 10 carbon atoms, for example, 3 to 10 carbon atoms, for example, 4 to 10 carbon atoms, for example, 5 to 10 carbon atoms.

[0078] More specifically, the first adhesive layer 30 may comprise a water-cured product of a water-curing adhesive composition comprising: an urethane-based prepolymer formed by polymerization of monomer components comprising an aromatic diisocyanate of Formula 1, a diol of Formula 2, and a diol of Formula 3; and an unreacted aromatic diisocyanate of Formula 1.

[0079] [Chemical Formula 2]

[0080]

[0081] [Chemical Formula 3]

[0082]

[0083] The adhesive composition may contain about 90% to about 99% by weight of the urethane-based prepolymer and about 1% to about 10% by weight of the unreacted aromatic diisocyanate. For example, the content of the urethane-based prepolymer may be about 91% to about 99% by weight, for example, about 93% to about 99% by weight, for example, about 95% to about 99% by weight, and the content of the unreacted aromatic diisocyanate may be about 1% to about 9% by weight, for example, about 1% to about 7% by weight, for example, about 1% to about 5% by weight. The unreacted aromatic diisocyanate refers to a diisocyanate in which the isocyanate groups (-NCO) at both ends are present in a state where they have not undergone polyurethane reaction.

[0084] The adhesive composition used for the first adhesive layer 30 has a viscosity at room temperature of about 5,000 mPa·s to about 10,000 mPa·s, for example, about 6,000 mPa·s to about 9,000 mPa·s. Room temperature refers to a temperature in the range of about 20°C to about 30°C. Because the viscosity of the adhesive composition meets the aforementioned range, excellent process efficiency can be ensured during the formation of the first adhesive layer 30, and at the same time, the density of the first adhesive layer 30 formed by curing it can further enhance its leak-proof effect.

[0085] Specifically, the second adhesive layer 40 may comprise one selected from the group consisting of thermoplastic urethane-based adhesives, acrylic thermoplastic acrylic adhesives, thermoplastic silicone adhesives, and combinations thereof. Since the second adhesive layer 40 comprises a thermoplastic resin, it offers technical advantages in terms of improved process efficiency compared to cases using thermosetting resins. Specifically, when using a thermosetting adhesive as the second adhesive layer 40, roll-to-roll processes are difficult to apply, resulting in decreased efficiency in mass production. Furthermore, the use of a spray coating method instead of a roll-to-roll process can increase pad contamination due to scattering. In other words, the second adhesive layer 40 is a layer formed over a large area between the second and third surfaces. The application of a thermoplastic adhesive improves process efficiency, significantly reduces defect rates by preventing contamination of the polishing pad, and provides better compatibility with the first adhesive layer 30, which is derived from a water-curing adhesive, in ensuring leak-proof performance. In addition, the second adhesive layer 40 contains a thermoplastic resin, thereby enabling excellent interfacial adhesion with the barrier layer 50 disposed on one of its surfaces.

[0086] In one implementation, the thickness of the second adhesive layer 40 can be from about 15 μm to about 40 μm, for example, from about 15 μm to about 35 μm, from about 20 μm to about 35 μm, or from about 22 μm to about 32 μm. Since the thickness of the second adhesive layer 40 meets the aforementioned range, it can ensure sufficient adhesion between the second surface 12 and the third surface 21, and as a multi-level adhesive layer structure on the lowermost surface of the window 102, it is more conducive to achieving a leak-proof effect. Furthermore, it can ensure excellent interfacial adhesion with the barrier layer 50 disposed on one surface of the second adhesive layer 40.

[0087] Reference Figure 2 In one embodiment of the polishing pad 100, the first adhesive layer 30 may not be disposed between the side of the window 102 and the side of the first through-hole 101. Alternatively, the first adhesive layer 30 may only contact the window 102 and its lowermost end face. That is, the length of the first adhesive layer 30 disposed between the side of the window 102 and the side of the first through-hole 101 can be 0 μm. This structure minimizes the gap between the side of the window 102 and the side of the first through-hole 101, resulting in technical advantages in preventing the inflow of liquid components or the accumulation of process residues in the gap.

[0088] Figure 3 This is a schematic cross-sectional view of the polishing pad 100' of another implementation example. (Refer to...) Figure 3 The first adhesive layer 30 can also be disposed between the side surface of the window 102 and the side surface of the first through-hole 101. Alternatively, the first adhesive layer 30 can contact the window 102 and its lowermost end face, as well as the side surface of the window 102. The length L1 of the first adhesive layer 30 disposed between the side surface of the window 102 and the side surface of the first through-hole 101 can, for example, be from about 0.1 μm to about 20 μm, or from about 0.1 μm to about 10 μm, or from 0.1 μm to about 5 μm. With the aforementioned structure, the path that liquid components can move from the uppermost end face and the polished surface of the window can be minimized, and technical advantages can be obtained in preventing the loading of deposits.

[0089] Reference Figure 2 or Figure 3The width W3 of the first adhesive layer 30 disposed on the lowermost surface of the window 102 can be the same as or longer than the width W2 of the portion of the lowermost surface of the window 102 supported by the third surface 21. With the aforementioned structure, the end portion of the interface between the side of the window 102 and the side of the first through-hole 101 can be effectively sealed by the first adhesive layer 30, and this provides a more effective solution for preventing water leakage.

[0090] The width W3 of the first adhesive layer 30 disposed on the lowermost end face of the window 102 can be from about 2 mm to about 15 mm, for example, from about 2 mm to about 12 mm, for example, from about 2 mm to about 10 mm, for example, from about 2.5 mm to about 9.5 mm, for example, from about 3.5 mm to about 9.5 mm. Since the width W3 of the first adhesive layer 30 satisfies the aforementioned range, and its relationship with the width W2 of the portion of the lowermost end face of the window 102 supported by the third surface 21 satisfies the aforementioned condition, it is possible to improve efficiency in ensuring the durability of the structure supported by the support layer while maximizing the light-transmitting area of ​​the window. Furthermore, it is advantageous in ensuring a sufficient path length for blocking liquid components that may flow through the interface between the side of the window 102 and the side of the first through-hole 101.

[0091] Reference Figure 2 As described above, the support layer 20 may include a compression portion CR in the region corresponding to the lowermost end face of the window 102, and simultaneously, may include a non-compression portion NCR in the regions other than the compression portion CR. The non-compression portion NCR has a specified porosity, thereby playing a buffering role in preventing the external force applied to the polishing pad 100 from being transmitted to the polished object through the polishing surface 11, and also playing a supporting role for the polishing layer 10.

[0092] Reference Figure 2The percentage of the thickness H2 of the compressed portion CR relative to the thickness H1 of the uncompressible portion NCR can be from about 0.01% to about 80%, for example, from about 0.01% to about 60%, for example, from about 0.01% to about 50%, for example, from about 0.1% to about 50%, for example, from about 1% to about 50%, for example, from about 1% to about 45%, for example, from about 2% to about 45%, for example, from about 5% to about 45%, for example, from about 10% to about 45%, for example, from about 15% to about 45%, for example, from about 20% to about 45%. That is, the value of H2 / H1×100 can satisfy the range. Since the compressed portion CR is compressed in such a way that it has a thickness that satisfies the range relative to the thickness of the uncompressible portion NCR, it is more advantageous to improve the water leakage prevention effect together with the multi-level adhesive layer structure of the lowermost end face of the window 102. In addition, the compression section CR can be configured as a high-density area that effectively prevents water leakage without suppressing the buffering and support functions of the non-compression section NCR.

[0093] Figure 4 This is an enlarged view of the above. Figure 2 A schematic diagram of Part B. (Refer to...) Figure 4 The height of the uppermost surface of the window 102 can be lower than the height of the first surface 11. Specifically, the height difference d3 between the uppermost surface of the window 102 and the first surface 11 can be approximately 0 μm to approximately 300 μm, for example, approximately 0 μm to approximately 250 μm, approximately 50 μm to approximately 250 μm, or approximately 50 μm to approximately 150 μm. Since the height difference between the uppermost surface of the window 102 and the first surface 11 satisfies the aforementioned relationship, it is advantageous in minimizing the possibility of liquid leakage from the interface between the side of the window 102 and the side of the first through-hole 101. More specifically, since the surface hardness of the uppermost surface of the window 102 and the first surface 11 satisfies the relationship described later, and the height difference between the uppermost surface of the window 102 and the first surface 11 satisfies the aforementioned condition, the polishing interface can move smoothly during the overall polishing of the uppermost surface of the window 102 and the first surface 11, thereby further maximizing the leakage prevention effect.

[0094] Figure 5 This is an enlarged view of the above. Figure 2 A schematic diagram of Part A. (Refer to...) Figure 5The first surface 11 may include at least one groove 111. The groove 111 is a groove structure machined to a depth d1 less than the thickness D1 of the polishing layer 10, and is capable of ensuring the flowability of liquid components such as polishing slurry and detergent applied to the first surface 11 during the polishing process. The flowability of the polishing slurry, etc., applied to the first surface 11 is closely related to water leakage through the interface between the side of the window 102 and the side of the first through-hole 101, thus it is possible to maximize the water leakage prevention effect of the polishing pad 100 by appropriately designing the structure of the groove 111.

[0095] In one implementation, the planar structure of the polishing pad 100 may be substantially circular, and at least one of the trenches 111 may have concentric circular structures arranged at predetermined intervals from the center of the polishing layer 10 on the first surface 11 to its ends. In another implementation, at least one of the trenches 111 may be a radial structure continuously formed from the center of the polishing layer 10 on the first surface 11 to its ends. In yet another implementation, at least one of the trenches 111 may simultaneously include both concentric circular structures and radial structures.

[0096] In one implementation, the thickness D1 of the polished layer can be from about 0.8 mm to about 5.0 mm, for example, from about 1.0 mm to about 4.0 mm, for example, from about 1.0 mm to 3.0 mm, for example, from about 1.5 mm to about 3.0 mm, for example, from about 1.7 mm to about 2.7 mm, for example, from about 2.0 mm to about 3.5 mm.

[0097] In one implementation, the width w1 of the groove 111 can be from about 0.1 mm to about 20 mm, for example, from about 0.1 mm to about 15 mm, for example, from about 0.1 mm to about 10 mm, for example, from about 0.1 mm to about 5 mm, for example, from about 0.1 mm to about 1.5 mm.

[0098] In one implementation, the depth d1 of the trench 111 can be from about 100 μm to about 1500 μm, for example, from about 200 μm to about 1400 μm, for example, from about 300 μm to about 1300 μm, for example, from about 400 μm to about 1200 μm, for example, from about 400 μm to about 1000 μm, for example, from about 400 μm to about 800 μm.

[0099] In one implementation, where the first surface 11 includes a plurality of grooves 111 and the plurality of grooves 111 include concentric circular grooves, the pitch p1, defined as the interval between two adjacent grooves 111 of the concentric circular grooves, can be from about 2 mm to about 70 mm, for example, from about 2 mm to about 60 mm, for example, from about 2 mm to about 50 mm, for example, from about 2 mm to about 35 mm, for example, from about 2 mm to about 10 mm, for example, from about 2 mm to about 8 mm.

[0100] Since at least one of the grooves 111 satisfies the aforementioned range of depths d1, widths w1, and spacings p1, or all of them, the flowability of the polishing slurry achieved in this way can be adequately ensured to maximize the water leakage prevention effect at the interface between the side of the window 102 and the side of the first through-hole 101. On the other hand, if the depth d1, width w1, and spacing p1 of at least one of the grooves 111 deviate from the aforementioned range, and the flowability of the polishing slurry achieved in this way is too fast, or the flow rate per unit time is too high, the polishing slurry may be discharged outside the first surface 11 without performing its main function. Conversely, if the flowability of the polishing slurry is too slow and the flow rate per unit time is too low, the amount of slurry components that need to perform the physicochemical polishing function on the polishing surface may increase sharply through the interface between the side of the window 102 and the side of the first through-hole 101 without performing its main function. Therefore, the long-term durability of the water leakage prevention effect through the multi-level adhesive structure of the first adhesive layer 30 and the second adhesive layer 40, the compression portion of the support layer, and the barrier layer may decrease. That is, since at least one of the grooves 111 satisfies each of the aforementioned depths d1, widths w1, and spacings p1 or all of them, it is beneficial to maximize the water leakage prevention effect through the multi-level adhesive structure, the compression section, and the barrier layer.

[0101] Reference Figure 5 The polishing layer 10 may be a porous structure comprising a plurality of pores 112. These pores 112 are dispersed throughout the polishing layer 10, ensuring a predetermined surface roughness is continuously maintained even during the polishing process when the polished surface 11 is ground by a conditioner or similar tool. A portion of the pores 112 may be exposed on the first surface 11 of the polishing layer 10, appearing as a micro-recess 113 distinct from the grooves 111. These micro-recesses 113, together with the grooves 111, can function to determine the flowability and mooring space of the polishing fluid or slurry during use of the polishing pad 100, and can also provide physical friction for polishing the surface being polished.

[0102] The average pore size of the plurality of pores 112 can be from about 10 μm to about 30 μm, for example, from about 10 μm to about 25 μm, from about 15 μm to about 25 μm, or from about 18 μm to about 23 μm. Regarding the average pore size, the polishing pad is cut into 1 mm × 1 mm squares (thickness: 2 mm), and a scanning electron microscope (SEM) is used to examine the 1 mm... 2 The polished surface was magnified 100 times, and the cross-section was observed from the magnified image. The diameter of the entire pore was then measured from the image obtained using image analysis software, and the number of pores was determined. The average pore size was derived as follows: by measuring the pore size from the polished surface (1 mm). 2 The sum of the diameters of the multiple pores in the polished layer is divided by the number of pores to obtain an average value. Since the polished layer 10 has a porous structure composed of multiple pores satisfying the average pore size, it can possess suitable mechanical properties that exhibit excellent compatibility with the mechanical and physical properties of the window 102. This minimizes leakage of liquid components flowing between the polished layer 10 and the window 102, thus providing greater advantage in preventing water leakage.

[0103] The first surface 11 can have a specified surface roughness through the micro-recesses 113. In one implementation, the surface roughness Ra of the first surface 11 can be from about 1 μm to about 20 μm, for example, from about 2 μm to about 18 μm, for example, from about 3 μm to about 16 μm, for example, from about 4 μm to about 14 μm, for example, from about 4 μm to about 10 μm. Since the surface roughness Ra of the first surface 11 meets the specified range, it is advantageous to properly ensure the flowability of the polishing slurry through the micro-recesses 113 based on the leakage prevention effect of the multi-level adhesive structure, the compression portion, and the barrier layer.

[0104] Figure 6 This is a schematic cross-sectional view of the polishing pad 200 in another implementation example. (Refer to...) Figure 6 The polishing pad 200 may also include a recess 103 on the lowermost end face of the window 102. The recess 103 is a recessed portion machined to a predetermined depth d2 from the lowermost end face of the window 102 toward the uppermost end face. In order to achieve more accurate endpoint detection, the light transmission path through the window 102 is shortened.

[0105] The recess 103 may have a depth d2 smaller than the thickness D2 of the window 102. The thickness D2 of the window 102 may be from about 1.5 mm to about 3.0 mm, for example, from about 1.5 mm to about 2.5 mm, or from about 2.0 mm to 2.2 mm. For example, the depth d2 of the recess 103 may be from about 0.1 mm to about 2.5 mm, for example, from about 0.1 mm to about 2.0 mm, for example, from about 0.1 mm to about 1.5 mm, or from about 0.6 mm to about 1.0 mm. Since the thickness D2 of the window 102 and the depth d2 of the recess 103 satisfy the aforementioned ranges individually or simultaneously, excellent endpoint detection functionality can be achieved. Furthermore, simultaneously, since the length of the path where leakage may occur is the same as the depth of the window 102, a structure that is also effective in preventing leakage can be ensured.

[0106] In one implementation, the Shore D hardness measured on the first surface 11 under a room-temperature dry condition may be less than the Shore D hardness measured on the uppermost surface of the window 102 under the same condition. Here, "room-temperature dry condition" refers to a dry state without any of the humidification conditions described below, occurring at a temperature range of approximately 20°C to approximately 30°C. For example, the difference between the Shore D hardness measured on the first surface 11 under a room-temperature dry condition and the Shore D hardness measured on the uppermost surface of the window 102 under the same condition may be approximately 1 to 10, for example, approximately 1 to 8, for example, approximately 2 to 8, for example, approximately 2 to 6, for example, approximately 2 to 5.

[0107] In one implementation, the Shore D hardness measured against the uppermost surface of the window 102 under a dry state at room temperature can be about 60 to about 70, for example, about 60 to 68, or for example, about 60 to about 65. In one implementation, the Shore D hardness measured against the first surface 11 under a dry state at room temperature can be about 50 to about 65, for example, about 53 to 65.

[0108] In one implementation, the difference between the Shore D wet hardness measured at 30°C for the uppermost surface of the window 102 and the Shore D wet hardness measured at room temperature in a dry state can be about 0 to about 2.0, for example, about 0.5 to about 2.0, for example, about 0.8 to about 2.0.

[0109] In one implementation, the Shore D wet hardness measured at 50°C for the uppermost surface of the window 102 can be less than the Shore D wet hardness measured at room temperature under dry conditions. For example, the difference between the Shore D wet hardness measured at 50°C for the uppermost surface of the window 102 and the Shore D wet hardness measured at room temperature under dry conditions can be from about 1.0 to about 7.0, for example, from about 1.0 to about 6.0, for example, from about 2.0 to about 6.0, for example, from about 3.5 to about 6.0, for example, from about 3.6 to 6.0.

[0110] In one implementation, the Shore D wet hardness measured at 70°C for the uppermost surface of the window 102 can be less than the Shore D wet hardness measured at room temperature under dry conditions. For example, the difference between the Shore D wet hardness measured at 70°C for the uppermost surface of the window 102 and the Shore D wet hardness measured at room temperature under dry conditions can be about 5 to about 10, for example, about 6 to about 10, for example, about 7 to about 10, for example, about 7.5 to about 10.

[0111] In one implementation, the Shore D wet hardness measured at 30°C for the first surface 11 of the polished layer 10 can be less than the Shore D wet hardness measured at 30°C for the uppermost surface of the window 102. For example, the difference between the Shore D wet hardness measured at 30°C for the first surface 11 of the polished layer and the uppermost surface of the window 102 can be greater than about 0 and less than about 15, for example, it can be from about 1 to about 15, or for example, it can be from about 2 to about 15.

[0112] In one implementation, the Shore D wet hardness measured at 50°C for the first surface 11 of the polished layer can be less than the Shore D wet hardness measured at 50°C for the uppermost surface of the window 102. For example, the difference between the Shore D wet hardness measured at 50°C for the first surface 11 of the polished layer and the uppermost surface of the window 102 can be greater than about 0 and less than about 15, for example, it can be from about 1 to about 25, for example, it can be from about 5 to about 25, for example, it can be from about 5 to 15.

[0113] In one implementation, the Shore D wet hardness measured at 70°C for the first surface 11 of the polished layer can be less than the Shore D wet hardness measured at 70°C for the uppermost surface of the window 102. For example, the difference between the Shore D wet hardness measured at 70°C for the first surface 11 of the polished layer and the uppermost surface of the window 102 can be greater than about 0 and less than about 15, for example, it can be from about 1 to about 25, for example, it can be from about 5 to about 25, for example, it can be from about 8 to 16.

[0114] The Shore D wet hardness refers to the surface hardness value measured after the window 102 or the polished layer 10 is immersed in water at the corresponding temperature for 30 minutes.

[0115] The polishing process using the polishing pad 100 mainly refers to the process of polishing while applying a slurry to the first surface 11. Furthermore, the temperature of the polishing process can vary primarily within the range of approximately 30°C to approximately 70°C. That is, since the hardness variation of the uppermost surface of the window 102, derived from Shore D hardness measured under temperature and humid conditions similar to the actual process, satisfies the aforementioned tendency, and simultaneously, the hardness relationship between the first surface 11 and the uppermost surface of the window 102 under normal temperature and dry conditions satisfies the aforementioned range, it is possible to smoothly perform the polishing action during the process of polishing through the uppermost surface of the window 102 and the first surface 11 as a whole, thereby minimizing the possibility of water leakage from the interface between the side of the first through-hole 101 and the side of the window 102.

[0116] In one implementation, the window 102 may comprise a non-foamed cured product of a window composition containing a first urethane-based prepolymer. Because the window 102 comprises a non-foamed cured product, it is more advantageous to ensure the transmittance and appropriate surface hardness required for endpoint detection compared to the case containing a foamed cured product. The "prepolymer" refers to a low-molecular-weight polymer whose degree of polymerization is interrupted at an intermediate stage during the manufacture of the cured product to facilitate molding. The prepolymer itself may be ultimately molded into a cured product through additional curing processes such as heating and / or pressurization, or it may be mixed and reacted with other polymerizable compounds, such as different types of monomers or different types of prepolymers, to ultimately mold into a cured product.

[0117] The first urethane-based prepolymer can be prepared by reacting a first isocyanate compound with a first polyol compound. The first isocyanate compound may include one selected from the group consisting of aromatic diisocyanates, aliphatic diisocyanates, alicyclic diisocyanates, and combinations thereof. In one embodiment, the first isocyanate compound may comprise both aromatic and alicyclic diisocyanates.

[0118] The first isocyanate compound, for example, may comprise, selected from 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-TDI), naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolidinediisocyanate, 4,4'-diphenylmethanediisocyanate, hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, and 4,4'-dicyclohexylmethanediisocyanate. 12 MDI, isophorone diisocyanate, and combinations thereof constitute one of the groups.

[0119] The first polyol compound may, for example, comprise one selected from the group consisting of polyether polyol, polyester polyol, polycarbonate polyol, acrylic polyol, and combinations thereof. The term "polyol" refers to a compound containing two or more hydroxyl groups (-OH) per molecule. In one embodiment, the first polyol compound may comprise a diol compound containing two hydroxyl groups, i.e., a diol or ethylene glycol. In one implementation, the first polyol compound may comprise a polyether polyol.

[0120] The first polyol compound may, for example, comprise one selected from the group consisting of polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

[0121] In one implementation, the weight-average molecular weight (Mw) of the first polyol compound may be from about 100 g / mol to about 3000 g / mol, for example, from about 100 g / mol to about 2000 g / mol, for example, from about 100 g / mol to about 1800 g / mol, for example, from about 500 g / mol to about 1500 g / mol, for example, from about 800 g / mol to about 1200 g / mol.

[0122] In one embodiment, the first polyol compound may comprise a low molecular weight polyol with a weight-average molecular weight (Mw) of about 100 g / mol or more and less than about 300 g / mol, and a high molecular weight polyol with a weight-average molecular weight (Mw) of about 300 g / mol or more and less than about 1800 g / mol. By appropriately mixing the low molecular weight polyol and the high molecular weight polyol having weight-average molecular weights within the aforementioned range as the first polyol compound, a non-foamed cured material with a suitable cross-linking structure can be formed from the first urethane-based prepolymer, and the window 102 is more advantageous in ensuring the desired physical properties such as hardness and optical properties such as light transmittance.

[0123] The weight-average molecular weight (Mw) of the first urethane-based prepolymer can be from about 500 g / mol to about 2000 g / mol, for example, from about 800 g / mol to about 1500 g / mol, for example, from about 900 g / mol to about 1200 g / mol, for example, from about 950 g / mol to about 1100 g / mol. Since the first urethane-based prepolymer has a degree of polymerization corresponding to the weight-average molecular weight (Mw) within the aforementioned range, the window composition is non-foamed and cured under specified process conditions, which is more conducive to forming a window 102 with an appropriate surface hardness relationship to the polished surface of the polished layer 10. In this way, polishing is performed smoothly throughout the polished surface and the uppermost surface of the window 102, which is also advantageous in terms of preventing water leakage.

[0124] In one embodiment, the first isocyanate compound may comprise an aromatic diisocyanate and an alicyclic diisocyanate. The aromatic diisocyanate may comprise, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the alicyclic diisocyanate may comprise dicyclohexylmethane diisocyanate (H... 12 MDI). Additionally, the first polyol compound may include, for example, polytetramethylene ether glycol (PTMG), diethylene glycol (DEG), and polypropylene glycol (PPG).

[0125] In the window composition, relative to the total amount of the first isocyanate compound in the entire composition used to prepare the first urethane prepolymer (100 parts by weight), the total amount of the first polyol compound may be from about 100 parts by weight to about 250 parts by weight, for example, from about 120 parts by weight to about 250 parts by weight, for example, from about 120 parts by weight to about 240 parts by weight, for example, from about 150 parts by weight to about 240 parts by weight, for example, from about 150 parts by weight to about 200 parts by weight.

[0126] In the window composition, the first isocyanate compound comprises the aromatic diisocyanate, which comprises 2,4-TDI and 2,6-TDI, and the content of 2,6-TDI may be from about 1 part by weight to about 40 parts by weight relative to 100 parts by weight, for example, from about 1 part by weight to about 30 parts by weight, for example, from about 10 parts by weight to about 30 parts by weight, for example, from about 15 parts by weight to about 30 parts by weight.

[0127] In the window composition, the first isocyanate compound comprises the aromatic diisocyanate and the alicyclic diisocyanate, and the total content of the alicyclic diisocyanate may be from about 5 parts by weight to about 30 parts by weight relative to the total content of 100 parts by weight of the aromatic diisocyanate, for example, from about 10 parts by weight to about 30 parts by weight, for example, from about 15 parts by weight to about 30 parts by weight.

[0128] Because the relative content ratio of each component in the window composition satisfies the aforementioned range individually or simultaneously, the window 102 manufactured thereby ensures the light transmittance required for the endpoint detection function, while its uppermost surface can have appropriate surface hardness. Therefore, the uppermost surface of the window 102 can form an appropriate mutual surface hardness relationship with the polished surface of the polishing layer 10, wherein the relative content ratio between the components in the polishing layer composition satisfies the conditions described later individually or simultaneously, and the polishing process is performed smoothly through repeated polishing of the polished surface and the uppermost surface of the window, thereby more effectively preventing water leakage between the side of the window 102 and the side of the first through-hole 101.

[0129] The isocyanate group content (NCO%) of the window composition can be from about 6% by weight to about 10% by weight, for example, from about 7% by weight to about 9% by weight, for example, from about 7.5% by weight to about 8.5% by weight. The isocyanate group content refers to the percentage by weight of isocyanate groups (-NCO) that have not undergone the urethane reaction and exist as free reactive groups in the total weight of the window composition. The isocyanate group content can be adjusted and designed by comprehensively adjusting the types and contents of the first isocyanate compound and the first polyol compound used to prepare the first urethane-based prepolymer, the temperature, pressure, time, and other conditions of the process for preparing the first urethane-based prepolymer, and the types and contents of additives used in the preparation of the first urethane-based prepolymer. Because the isocyanate group content of the window composition meets the aforementioned range, the window composition is a non-foamed cured material, thereby ensuring appropriate surface hardness and facilitating an appropriate hardness relationship with the polished layer in terms of maximizing the leak-proof effect.

[0130] The window composition may further include a curing agent. The curing agent is a compound used to chemically react with the first urethane-based prepolymer to form the final cured structure within the window; for example, it may include an amine compound or an alcohol compound. Specifically, the curing agent may include one selected from the group consisting of aromatic amines, aliphatic amines, aromatic alcohols, aliphatic alcohols, and combinations thereof.

[0131] For example, the curing agent may comprise a compound selected from 4,4'-methylenebis(2-chloroaniline) (MOCA), diethyltoluenediamine (DETDA), diaminodiphenylmethane, dimethylthio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, and methyl methylenebis-o-aminobenzoate. One of the following groups: bis-methylanthranilate, diaminodiphenylsulfone, m-xylylenediamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

[0132] Based on 100 parts by weight of the window composition, the content of the curing agent may be from about 18 parts by weight to about 28 parts by weight, for example, from about 19 parts by weight to about 27 parts by weight, for example, from about 20 parts by weight to about 26 parts by weight.

[0133] In one embodiment, the curing agent may comprise an amine compound, and the molar ratio of isocyanate groups (-NCO) in the window composition to amine groups (-NH2) in the curing agent may be from about 1:0.60 to about 1:0.99, for example, from about 1:0.60 to about 1:0.95.

[0134] As described above, the window may comprise a non-foamed cured portion of the window composition. Therefore, the window composition may not contain a blowing agent. Because the window composition undergoes a curing process without a blowing agent, the light transmittance required for endpoint detection can be ensured.

[0135] The window composition may also include additives as needed. The types of additives may include those selected from the group consisting of surfactants, pH adjusters, binders, antioxidants, heat stabilizers, dispersing stabilizers, and combinations thereof. The names "surfactant," "antioxidant," etc., are arbitrary names based on the primary function of the substance, and each corresponding substance does not necessarily perform only the function limited by its name.

[0136] In one embodiment, the window 102, with a thickness of 2 mm, can have a transmittance of about 1% to about 50% for light with a wavelength range of about 500 nm to about 700 nm, for example, about 30% to about 85%, for example, about 30% to about 70%, for example, about 30% to about 60%, for example, about 1% to about 20%, for example, about 2% to about 20%, for example, about 4% to about 15%. The transmittance of the window can be adjusted by whether the surface of the window is treated or not, the composition of the window, etc. Since the uppermost surface of the window 102 and the polished surface of the polished layer 10 satisfy the aforementioned hardness relationship while having this transmittance, excellent water leakage prevention effect can be ensured.

[0137] In one embodiment, the polishing layer 10 may comprise a foamed cured product of a polishing layer composition containing a second urethane-based prepolymer. Because the polishing layer 10 contains a foamed cured product, it can have a porous structure that creates a surface roughness on a polishing surface that cannot be achieved with a non-foamed cured product. Therefore, it can effectively ensure the flowability of the polishing slurry applied to the polishing surface and the physical friction with the surface being polished. The term "prepolymer" refers to a low-molecular-weight polymer whose degree of polymerization is interrupted at an intermediate stage during the preparation of the cured product to facilitate molding. The prepolymer itself can be ultimately molded into a cured product through additional curing processes such as heating and / or pressurization, or it can be mixed and reacted with other polymeric compounds, such as different types of monomers or different types of prepolymers, to ultimately mold into a cured product.

[0138] The second urethane-based prepolymer can be prepared by reacting a second isocyanate compound with a second polyol compound. The second isocyanate compound may comprise one selected from the group consisting of aromatic diisocyanates, aliphatic diisocyanates, alicyclic diisocyanates, and combinations thereof. In one embodiment, the second isocyanate compound may comprise an aromatic diisocyanate. For example, the second isocyanate compound may comprise both aromatic and alicyclic diisocyanates.

[0139] The second isocyanate compound may comprise, for example, 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-TDI), naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolidinediisocyanate, 4,4'-diphenylmethanediisocyanate, hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, and 4,4'-dicyclohexylmethanediisocyanate. 12 It is a group consisting of MDI, isophorone diisocyanate, and combinations thereof.

[0140] The second polyol compound may comprise one selected from, for example, the group consisting of polyether polyols, polyester polyols, polycarbonate polyols, acrylic polyols, and combinations thereof. The term "polyol" refers to a compound containing two or more hydroxyl groups (-OH) per molecule. In one embodiment, the second polyol compound may comprise a diol compound containing two hydroxyl groups, i.e., a diol or ethylene glycol. In another embodiment, the second polyol compound may comprise a polyether polyol.

[0141] The second polyol compound may, for example, comprise one selected from the group consisting of polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

[0142] In one embodiment, the second polyol compound may comprise a low molecular weight polyol with a weight-average molecular weight (Mw) of about 100 g / mol or more and less than about 300 g / mol, and a high molecular weight polyol with a weight-average molecular weight (Mw) of about 300 g / mol or more and less than about 1800 g / mol. By appropriately mixing the low molecular weight polyol and the high molecular weight polyol having weight-average molecular weights within the aforementioned range as the second polyol compound, a foamed cured product with a suitable crosslinking structure can be formed from the second urethane-based prepolymer. This is more conducive to forming the foamed structure with the physical properties such as hardness required for the polished layer 10 and with pores of a suitable size.

[0143] The weight-average molecular weight (Mw) of the second urethane-based prepolymer can be from about 500 g / mol to about 3,000 g / mol, for example, from about 600 g / mol to about 2,000 g / mol, or from about 800 g / mol to about 1,000 g / mol. Since the second urethane-based prepolymer has a degree of polymerization corresponding to the aforementioned range of weight-average molecular weight (Mw), the foaming and curing of the polishing layer composition under specified process conditions is more conducive to forming a polishing layer 10 having a polished surface with an appropriate mutual surface hardness relationship to the uppermost surface of the window 102. This allows for a smooth polishing process performed integrally with the polished surface and the uppermost surface of the window 102, and also provides an advantage in preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0144] In one embodiment, the second isocyanate compound may comprise an aromatic diisocyanate and an alicyclic diisocyanate. The aromatic diisocyanate may comprise, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the alicyclic diisocyanate may comprise dicyclohexylmethane diisocyanate (H... 12 MDI). Additionally, the second polyol compound may include, for example, polytetramethylene ether glycol (PTMG) and diethylene glycol (DEG).

[0145] In the polishing layer composition, relative to the total amount of the second isocyanate compound in the entire composition for preparing the second urethane prepolymer (100 parts by weight), the total amount of the second polyol compound may be from about 100 parts by weight to about 250 parts by weight, for example, from about 110 parts by weight to about 250 parts by weight, for example, from about 110 parts by weight to about 240 parts by weight, for example, from about 110 parts by weight to about 200 parts by weight, for example, from about 110 parts by weight to about 180 parts by weight, for example, more than about 110 parts by weight and less than about 150 parts by weight.

[0146] In the polishing layer composition, the second isocyanate compound comprises the aromatic diisocyanate, which comprises 2,4-TDI and 2,6-TDI. The content of 2,6-TDI may be from about 1 part by weight to about 40 parts by weight relative to 100 parts by weight, for example, from about 1 part by weight to about 30 parts by weight, for example, from about 10 parts by weight to about 30 parts by weight, for example, from about 15 parts by weight to about 30 parts by weight.

[0147] In the polishing layer composition, the second isocyanate compound comprises the aromatic diisocyanate and the alicyclic diisocyanate. The total content of the alicyclic diisocyanate may be from about 5 parts by weight to about 30 parts by weight relative to the total content of 100 parts by weight of the aromatic diisocyanate. For example, it may be from about 5 parts by weight to about 25 parts by weight, or from about 5 parts by weight to about 20 parts by weight, or more than about 5 parts by weight and less than about 15 parts by weight.

[0148] Since the relative content ratio of each component in the polishing layer composition satisfies the aforementioned range individually or simultaneously, the polished surface of the polishing layer 10 thus manufactured can have an appropriate porosity structure and surface hardness. Therefore, the polished surface of the polishing layer 10 can form an appropriate mutual surface hardness relationship with the uppermost surface of the window 102, where the relative content ratio of each component satisfies the aforementioned conditions individually or simultaneously. As a result, the polishing process performed integrally through the polished surface and the uppermost surface of the window 102 is carried out smoothly, which is also advantageous in preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0149] The isocyanate group content (NCO%) of the polishing layer composition can be from about 6% by weight to about 12% by weight, for example, from about 6% by weight to about 10% by weight, for example, from about 6% by weight to about 9% by weight. The isocyanate group content refers to the percentage by weight of isocyanate groups (-NCO) that have not undergone the urethane reaction and exist as free reactive groups in the total weight of the prepared composition. The isocyanate group content can be adjusted and designed by comprehensively adjusting the types and contents of the second isocyanate compound and the second polyol compound used to prepare the second urethane-based prepolymer, the temperature, pressure, time, and other conditions of the process for preparing the second urethane-based prepolymer, and the types and contents of additives used in the preparation of the second urethane-based prepolymer. Since the isocyanate group content of the polishing layer composition meets the specified range, the polishing layer composition foams and cures under the specified process conditions, which is more conducive to forming a polishing layer 10 with a polished surface having an appropriate mutual surface hardness relationship with the uppermost surface of the window 102. Thus, the polishing process performed as a whole by the polished surface and the uppermost surface of the window 102 is carried out smoothly, which is also advantageous in preventing water leakage through the interface between the window 102 and the polishing layer 10.

[0150] The polishing layer composition may further include a curing agent. The curing agent is a compound used to chemically react with the second urethane-based prepolymer to form the final cured structure within the polishing layer; for example, it may include an amine compound or an alcohol compound. Specifically, the curing agent may include one selected from the group consisting of aromatic amines, aliphatic amines, aromatic alcohols, aliphatic alcohols, and combinations thereof.

[0151] For example, the curing agent may comprise a compound selected from 4,4'-methylenebis(2-chloroaniline) (MOCA), diethyltoluenediamine (DETDA), diaminodiphenylmethane, dimethylthio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, and methyl methylenebis-o-aminobenzoate. One of the following groups: bis-methylanthranilate, diaminodiphenylsulfone, m-xylylenediamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

[0152] Based on 100 parts by weight of the polishing layer composition, the content of the curing agent may be from about 18 parts by weight to about 28 parts by weight, for example, from about 19 parts by weight to about 27 parts by weight, for example, from about 20 parts by weight to about 26 parts by weight.

[0153] In one embodiment, the curing agent may comprise an amine compound, and the molar ratio of isocyanate groups (-NCO) in the polishing layer composition to amine groups (-NH2) in the curing agent may be from about 1:0.60 to about 1:0.99, for example, from about 1:0.60 to about 1:0.95.

[0154] The polishing layer composition may further include a foaming agent. The foaming agent is a component used to form the porous structure in the polishing layer and may include one selected from the group consisting of solid foaming agents, gaseous foaming agents, liquid foaming agents, and combinations thereof. In one embodiment, the foaming agent may include a solid foaming agent, a gaseous foaming agent, or a combination thereof.

[0155] The average particle size of the solid foaming agent can be from about 5 μm to about 200 μm, for example, from about 20 μm to about 50 μm, for example, from about 21 μm to about 50 μm, for example, from about 21 μm to about 40 μm. When the solid foaming agent is thermally expanded particles, the average particle size of the solid foaming agent refers to the average particle size of the thermally expanded particles themselves. When the solid foaming agent is unexpanded particles, which will be described later, the average particle size of the solid foaming agent refers to the average particle size of the particles after they have expanded due to heat or pressure.

[0156] The solid foaming agent may contain expandable particles. These expandable particles, which are particles that can expand under heat or pressure, have a final size in the polished layer that depends on the heat or pressure applied during the preparation of the polished layer. The expandable particles may include thermally expanded particles, unexpanded particles, or a combination thereof. Thermally expanded particles, as particles that have pre-expanded due to heat, refer to particles whose size changes little or almost nothing due to the heat or pressure applied during the preparation of the polished layer. Unexpanded particles, as particles that have not pre-expanded, refer to particles that expand under heat or pressure applied during the preparation of the polished layer and whose final size is determined.

[0157] The expandable particles may comprise: a resin outer skin; and expansion-inducing components present inside the outer skin.

[0158] For example, the outer skin may comprise a thermoplastic resin, which may be one or more selected from the group consisting of vinylidene chloride copolymers, acrylonitrile copolymers, methacrylonitrile copolymers, and acrylic copolymers.

[0159] The swelling-inducing component may include one selected from the group consisting of hydrocarbon compounds, chlorofluorocarbons, tetraalkylsilane compounds, and combinations thereof.

[0160] Specifically, the hydrocarbon compound may comprise one selected from the group consisting of ethane, ethylene, propane, propylene, n-butane, isobutene, n-butene, isobutene, n-pentane, isopentane, n-hexane, heptane, petroleum ether, and combinations thereof.

[0161] The fluorochloro compound may include one selected from the group consisting of trichlorofluoromethane (CCl3F), dichlorodifluoromethane (CCl2F2), chlorotrifluoromethane (CClF3), dichlorotetrafluoroethane (CClF2-CClF2), and combinations thereof.

[0162] The tetraalkylsilane compound may comprise one selected from the group consisting of tetramethylsilane, trimethylethylsilane, trimethylisopropylsilane, trimethyl-n-propylsilane, and combinations thereof.

[0163] The solid foaming agent may optionally contain inorganically treated particles. For example, the solid foaming agent may contain expandable particles treated with inorganic components. In one embodiment, the solid foaming agent may contain expandable particles treated with silica (SiO2) particles. The inorganic component treatment of the solid foaming agent can prevent aggregation between multiple particles. The chemical, electrical, and / or physical properties of the foaming agent surface of the inorganically treated solid foaming agent may differ from those of the untreated solid foaming agent.

[0164] Based on 100 parts by weight of the urethane-based prepolymer, the content of the solid foaming agent can be from about 0.5 parts by weight to about 10 parts by weight, for example, from about 1 part by weight to about 3 parts by weight, for example, from about 1.3 parts by weight to about 2.7 parts by weight, for example, from about 1.3 parts by weight to about 2.6 parts by weight.

[0165] The type and content of the solid foaming agent can be designed according to the desired pore structure and physical properties of the polished layer.

[0166] The gaseous foaming agent may contain an inert gas. The gaseous foaming agent may be added during the reaction of the second urethane-based prepolymer with the curing agent to serve as a pore-forming element.

[0167] There are no particular restrictions on the type of inert gas, as long as it is a gas that does not participate in the reaction between the second urethane prepolymer and the curing agent. For example, the inert gas may include one selected from the group consisting of nitrogen (N2), argon (Ar), helium (He), and combinations thereof. Specifically, the inert gas may include nitrogen (N2) or argon (Ar).

[0168] The type and content of the gas foaming agent can be designed according to the desired pore structure and physical properties of the polished layer.

[0169] In one implementation, the foaming agent may comprise a solid foaming agent. For example, the foaming agent may be formed solely from a solid foaming agent.

[0170] The solid foaming agent may contain expandable particles, which may include thermally expandable particles. For example, the solid foaming agent may consist only of thermally expandable particles. While the variability of the pore structure decreases when it is composed only of thermally expandable particles and does not contain the non-expanded particles, predictability increases, thus facilitating the achievement of uniform pore characteristics across all areas of the polished layer.

[0171] In one implementation, the thermally expanded particles can be particles having an average particle size of about 5 μm to about 200 μm. The average particle size of the thermally expanded particles can be about 5 μm to about 100 μm, for example, about 10 μm to about 80 μm, for example, about 20 μm to about 70 μm, for example, about 20 μm to about 50 μm, for example, about 30 μm to about 70 μm, for example, about 25 μm to 45 μm, for example, about 40 μm to about 70 μm, for example, about 40 μm to about 60 μm. The average particle size is defined as the D50 of the thermally expanded particles.

[0172] In one implementation example, the density of the thermally expanded particles can be approximately 30 kg / m³. 3 Approximately 80 kg / m 3 For example, it can be approximately 35 kg / m 3 Approximately 80 kg / m 3 For example, it can be approximately 35 kg / m 3 Approximately 75 kg / m 3 For example, it can be approximately 38 kg / m 3 Approximately 72kg / m 3 For example, it can be approximately 40 kg / m 3 Approximately 75 kg / m 3 For example, it can be approximately 40 kg / m 3 Approximately 72kg / m 3.

[0173] In one implementation, the foaming agent may comprise a gaseous foaming agent. For example, the foaming agent may comprise both a solid foaming agent and a gaseous foaming agent. The relevant aspects of the solid foaming agent are as described above.

[0174] The gaseous blowing agent can be injected using a predetermined injection line during the mixing of the second urethane-based prepolymer, the solid blowing agent, and the curing agent. The injection rate of the gaseous blowing agent can be from about 0.8 L / min to about 2.0 L / min, for example, from about 0.8 L / min to about 1.8 L / min, for example, from about 0.8 L / min to about 1.7 L / min, for example, from about 1.0 L / min to about 2.0 L / min, for example, from about 1.0 L / min to about 1.8 L / min, for example, from about 1.0 L / min to about 1.7 L / min.

[0175] The polishing layer composition may also include additives as needed. The additives may be selected from the group consisting of surfactants, pH adjusters, binders, antioxidants, heat stabilizers, dispersing stabilizers, and combinations thereof. The names "surfactant," "antioxidant," etc., are arbitrary names based on the primary function of the substance, and each corresponding substance does not necessarily perform only the function limited by its name.

[0176] There are no particular limitations on the surfactant, as long as it is a substance that prevents the aggregation or overlapping of pores. For example, the surfactant may include silicone-based surfactants.

[0177] Based on 100 parts by weight of the second urethane-based prepolymer, the surfactant can be used at a content of about 0.2 parts by weight to about 2 parts by weight. Specifically, relative to 100 parts by weight of the second urethane-based prepolymer, the content of the surfactant can be about 0.2 parts by weight to about 1.9 parts by weight, for example, about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight to about 1.7 parts by weight, for example, about 0.2 parts by weight to about 1.6 parts by weight, for example, about 0.2 parts by weight to about 1.5 parts by weight, for example, about 0.5 parts by weight to 1.5 parts by weight. When the surfactant content is within the said range, the pores caused by the gas blowing agent can be stably formed and maintained within the mold.

[0178] The reaction rate regulator, acting as a regulator to promote or delay the reaction, can be used as a reaction promoter, reaction delayer, or both, depending on the purpose. The reaction rate regulator may contain a reaction promoter. For example, the reaction promoter may be one or more reaction promoters selected from the group consisting of tertiary amine compounds and organometallic compounds.

[0179] Specifically, the reaction rate regulator may comprise a subset selected from triethylenediamine, dimethylethanolamine, tetramethylbutanediamine, 2-methyl-triethylenediamine, dimethylcyclohexylamine, triethylamine, triisopropanolamine, 1,4-diazabicyclo(2,2,2)octane, bis(2-methylaminoethyl) ether, trimethylaminoethylethanolamine, N,N,N,N,N”-pentamethyldiethylenetriamine, dimethylaminoethylamine, dimethylaminopropylamine, benzyldimethylamine, N-ethyl The reaction rate regulator may comprise one or more of the following groups: morpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexylamine, 2-methyl-2-azanorbornene, dibutyltin dilaurate, stannous octanoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyldiisooctanoate, and dibutyltin dithiol. Specifically, the reaction rate regulator may comprise one or more of the following groups: benzyldimethylamine, N,N-dimethylcyclohexylamine, and triethylamine.

[0180] Based on 100 parts by weight of the second urethane-based prepolymer, the amount of the reaction rate modifier can be from about 0.05 parts by weight to about 2 parts by weight, for example, from about 0.05 parts by weight to about 1.8 parts by weight, for example, from about 0.05 parts by weight to about 1.7 parts by weight, for example, from about 0.05 parts by weight to about 1.6 parts by weight, for example, from about 0.1 parts by weight to about 1.5 parts by weight, for example, from about 0.1 parts by weight to about 0.3 parts by weight, for example, from about 0.2 parts by weight to about 1.8 parts by weight, for example, from about 0.2 parts by weight to about 1.7 parts by weight, for example, from about 0.2 parts by weight to about 1.6 parts by weight, for example, from about 0.2 parts by weight to about 1.5 parts by weight, for example, from about 0.5 parts by weight to about 1 part by weight. When the reaction rate modifier is used within the aforementioned content range, a polished layer with desired pore size and hardness can be formed by appropriately adjusting the curing reaction rate of the prepared composition.

[0181] In one implementation, the density of the polished layer 10 may be approximately 0.50 g / cm³. 3 Approximately 1.20 g / cm³ 3 For example, it can be approximately 0.50 g / cm³. 3 Approximately 1.10 g / cm³ 3 For example, it can be approximately 0.50 g / cm³.3 To approximately 1.00 g / cm³ 3 For example, it can be approximately 0.60 g / cm³. 3 To approximately 0.90 g / cm 3 For example, it can be approximately 0.70 g / cm³. 3 To approximately 0.90 g / cm 3 The polishing layer 10, with a density within the specified range, provides a polished surface with appropriate mechanical properties to the object being polished. This results in excellent polishing flatness of the surface being polished, while effectively preventing defects such as scratches. Furthermore, because the properties of the polishing layer 10 are highly compatible with the mechanical and physical properties of the window 102, leakage between the polishing layer 10 and the window 102 is minimized, thus providing greater advantages in preventing water leakage.

[0182] In one implementation, the tensile strength of the polished layer 10 can be approximately 15 N / mm². 2 Approximately 30 N / mm 2 For example, it can be approximately 15 N / mm. 2 Approximately 28 N / mm 2 For example, it can be approximately 15 N / mm. 2 Approximately 27 N / mm 2 For example, it can be approximately 17 N / mm. 2 Approximately 27 N / mm 2 For example, it can be approximately 20 N / mm. 2 Approximately 27 N / mm 2 The tensile strength is derived as follows: the polished layer is processed to a thickness of 2 mm, and then a sample is prepared by cutting it into dimensions of 4 cm × 1 cm. The sample is then measured using a universal testing machine (UTM) at a speed of 50 mm / min to determine the highest strength value before fracture. The polished layer 10, whose tensile strength meets the specified range, provides a polished surface with appropriate mechanical properties to the object being polished. As a result, it facilitates excellent polishing flatness of the polished surface while effectively preventing defects such as scratches. Furthermore, since the properties of the polished layer 10 are highly compatible with the mechanical and physical properties of the window 102, leakage between the polished layer 10 and the window 102 is minimized, thus providing greater advantages in preventing water leakage.

[0183] In one implementation, the elongation of the polished layer 10 can be more than about 100%, for example, from about 100% to about 200%, or from about 110% to about 160%. The elongation is derived by processing the polished layer to a thickness of 2 mm, preparing a sample by cutting it into sections of 4 cm x 1 cm, and then measuring the maximum deformation length before fracture using a universal testing machine (UTM) at a speed of 50 mm / min. The ratio of the maximum deformation length to the initial length is then expressed as a percentage (%). A polished layer 10 with an elongation within the specified range can provide a polished surface with appropriate mechanical properties to the object being polished, resulting in excellent polished flatness of the polished surface while effectively preventing defects such as scratches. Furthermore, since the physical properties of the polished layer 10 are highly compatible with the mechanical and physical properties of the window 102, the occurrence of leakage between the polished layer 10 and the window 102 is minimized, thereby providing greater advantages in preventing water leakage.

[0184] As described above, since the support layer 20 includes the compression portion CR, it provides improved water leakage prevention to the polishing pad 100. At the same time, it can act as a buffer to alleviate external pressure or external impact that may be transmitted to the polished surface in the polishing process through the non-compression portion NCR.

[0185] The support layer 20 may include, but is not limited to, nonwoven fabric or suede. In one embodiment, the support layer 20 may include nonwoven fabric. "Nonwoven fabric" refers to a three-dimensional mesh structure without woven fibers. Specifically, the support layer 20 may include nonwoven fabric and a resin impregnated in the nonwoven fabric.

[0186] The nonwoven fabric, for example, may be a nonwoven fabric comprising fibers selected from the group consisting of polyester fibers, polyamide fibers, polypropylene fibers, polyethylene fibers, and combinations thereof.

[0187] The resin impregnated in the nonwoven fabric may, for example, comprise one selected from the group consisting of polyurethane resin, polybutadiene resin, styrene-butadiene copolymer resin, styrene-butadiene-styrene copolymer resin, acrylonitrile-butadiene copolymer resin, styrene-ethylene-butadiene-styrene copolymer resin, silicone rubber resin, polyester elastomer resin, polyamide elastomer resin, and combinations thereof.

[0188] In one implementation, the support layer 20 may comprise a nonwoven fabric containing polyester fibers, wherein a resin containing polyurethane resin is impregnated in the polyester. In this case, excellent support performance of the support layer 20 for the window 102 can be achieved in the region near where the window 102 is located, and when realizing the function of loading residues through the pores, it is beneficial to safely load the residues loaded on the uppermost surface of the support layer 20 without leakage.

[0189] For example, the thickness of the support layer 20 can be from about 0.5 mm to about 2.5 mm, for example, from about 0.8 mm to about 2.5 mm, for example, from about 1.0 mm to about 2.5 mm, for example, from about 1.0 mm to about 2.0 mm, for example, from about 1.2 mm to about 1.8 mm. (Refer to...) Figure 2 The thickness of the support layer 20 can be the thickness H1 of the non-compressible part NCR.

[0190] The surface of the support layer 20, for example, the third surface 21, can have an Asker C hardness of about 60 to about 80, for example, about 65 to about 80. Since the surface hardness on the third surface 21 meets the range of Asker C hardness, the support rigidity for supporting the polished layer 10 can be sufficiently ensured, and excellent interfacial adhesion can be achieved between the second adhesive layer 40 and the second surface 12.

[0191] The density of the support layer 20 can be approximately 0.10 g / cm³. 3 To approximately 1.00 g / cm³ 3 For example, it can be approximately 0.10 g / cm³. 3 Approximately 0.80 g / cm³ 3 For example, it can be approximately 0.10 g / cm³. 3 Approximately 0.70 g / cm³ 3 For example, it can be approximately 0.10 g / cm³. 3 Approximately 0.60 g / cm³ 3 For example, it can be approximately 0.10 g / cm³. 3 To approximately 0.50 g / cm 3 For example, it can be approximately 0.20 g / cm³. 3 To approximately 0.40 g / cm 3 The support layer 20, whose density meets the specified range, can have excellent cushioning effect based on the high elasticity of the uncompressible part NCR, and since the compressible part CR is compressed relative to the uncompressible part NCR at a specified compression rate, it is more conducive to forming a high-density region.

[0192] The compression ratio of the support layer 20 can be from about 1% to about 20%, for example, from about 3% to about 15%, from about 5% to about 15%, or from about 6% to about 14%. The compression ratio is calculated as follows: the support layer is cut into length × width 5cm × 5cm (thickness: 2mm). The thickness of the buffer layer after maintaining an 85g stress load for 30 seconds under no-load conditions is measured and denoted as T1 (mm). The thickness of the support layer after maintaining an 800g stress load for 3 minutes under the T1 condition is measured and denoted as T2 (mm). The compression ratio is then calculated using the formula (T1-T2) / T1×100. Since the compression ratio of the support layer 20 measured under these conditions meets the aforementioned range, the compression section CR is more conducive to forming a high-density area that is effective in preventing leaks.

[0193] The compressive elasticity of the support layer 20 can be from about 60% to about 95%, for example, from about 70% to about 95%, or from about 70% to about 92%. The compressive elasticity is calculated as follows: the support layer is cut into length × width 5cm × 5cm (thickness: 2mm). The thickness of the buffer layer after maintaining an 85g stress load for 30 seconds in an unloaded state is measured and denoted as T1 (mm). The thickness of the support layer after maintaining an 800g stress load for 3 minutes in the T1 state is measured and denoted as T2 (mm). The 800g stress load is removed from the T2 state, and the layer is restored while maintaining an 85g stress load for 1 minute. The thickness of the support layer at this time is denoted as T3. The compressive elasticity is calculated according to the formula (T3-T2) / (T1-T2)×100. Since the compressibility of the support layer 20 measured under the aforementioned conditions meets the aforementioned range, it is more conducive to the formation of the compression portion CR in a high-density area that is effective in preventing water leakage. At the same time, the elasticity of the support layer 20 is more advantageous in terms of preventing defects on the polished surface and improving the smoothness of the polish.

[0194] The air leak value of the polishing pads (100, 100', 200) in one embodiment can be approximately 1.0 × 10⁻⁶. -4 Below cc / min (0.001 = 1 mbar), for example, it can be less than about 1.0 × 10⁻⁶. -4 cc / min (0.001 = 1 mbar), for example, it could be approximately 5.0 × 10⁻⁶ cc / min. -5 Below cc / min (0.001 = 1 mbar). Figure 7 This is a diagram that schematically illustrates the air leakage measurement process of the polishing pad. (Refer to...) Figure 7The air leakage value is derived as follows: for the polishing pad, a holder 300 is set and sealed on the area corresponding to the periphery of the window on the lower surface of the support layer, and then a pressure reduction of 5 seconds is implemented under -1 bar conditions. After stabilization by maintaining the pressure reduction state for 10 seconds, the pressure change is measured.

[0195] In another embodiment of the present invention, a method for manufacturing a semiconductor device is provided, comprising: providing a polishing pad having a polishing layer, the polishing layer including a first surface as a polishing surface and a second surface as an opposite surface of the first surface, including a first through-hole extending from the first surface to the second surface, including a window disposed within the first through-hole; and configuring the first surface and the surface to be polished of a polishing object to contact each other, and then polishing the polishing object while rotating the polishing pad and the polishing object relative to each other under pressure, the polishing object including a semiconductor substrate, and the polishing pad further including the second surface disposed on the polishing layer. A support layer on the side of the window, the support layer comprising: a third surface on the polished layer side and a fourth surface as the opposite side of the third surface; a second through hole extending from the third surface to the fourth surface and connected to the first through hole, the second through hole being smaller than the first through hole; the lowermost end face of the window being supported by the third surface; a first adhesive layer being included between the lowermost end face of the window and the third surface; a second adhesive layer being included between the second surface and the third surface and between the lowermost end face of the window and the third surface; a barrier layer being included on one surface of the second adhesive layer; and a compression portion being included in the region corresponding to the lowermost end face of the window.

[0196] In the semiconductor device manufacturing method, all matters related to the polishing pad, not only as described again later, but also as described in the explanation of the above implementation example, can be applied in the same way. By applying the polishing pad having the above characteristics to the semiconductor device manufacturing method, the semiconductor device thus prepared can ensure high quality based on the excellent polishing results of the semiconductor substrate.

[0197] Figure 8 This is a schematic diagram illustrating a method for manufacturing the semiconductor device of one implementation example. (Refer to...) Figure 8 The polishing pad 100 can be disposed on the platform 120. (Refer to...) Figure 2 and Figure 8The polishing pad 100 can be disposed on the platform 120 with the second surface 12 side of the polishing layer 10 facing the platform 120. Alternatively, the polishing pad 100 can be disposed on the platform 120 with the uppermost end face of the window 102 and the first surface 11 serving as the polishing surface exposed on the outermost surface.

[0198] The object to be polished includes a semiconductor substrate 130. The semiconductor substrate 130 may be configured such that its polished surface contacts the first surface 11 and the uppermost surface of the window 102. The polished surface of the semiconductor substrate 130 may directly contact the first surface 11 and the uppermost surface of the window 102, or it may indirectly contact them through a fluid paste or the like. In this specification, "contact" means all cases including direct or indirect contact.

[0199] The semiconductor substrate 130, mounted on the polishing head 160 with the polished surface facing the polishing pad 100, is pressurized with a predetermined load while contacting and rotating with the uppermost surface of the first surface 11 and the window 102. The load applied to the polished surface of the semiconductor substrate 130 relative to the first surface 11 can be selected, for example, from about 0.01 psi to about 20 psi depending on the purpose; for example, it can be from about 0.1 psi to about 15 psi, but is not limited thereto. Because the polished surface of the semiconductor substrate 130 is rotated and polished with a load within the aforementioned range in contact with the uppermost surface of the first surface 11 and the window 102, the repeated back-and-forth movement between the first surface 11 and the uppermost surface of the window 102 further enhances the effectiveness of preventing water leakage through their interfaces.

[0200] The semiconductor substrate 130 and the polishing pad 100 can rotate relative to each other while their respective polished surfaces are in contact. In this case, the rotation direction of the semiconductor substrate 130 and the rotation direction of the polishing pad 100 can be the same or opposite. In this specification, "relative rotation" is interpreted as including rotation in the same direction or rotation in opposite directions. The polishing pad 100 rotates with the platform 120 while mounted on it, and the semiconductor substrate 130 rotates with the polishing head 160 while mounted on it. The rotation speed of the polishing pad 100 can be selected from approximately 10 rpm to approximately 500 rpm depending on the purpose; for example, it can be from approximately 30 rpm to approximately 200 rpm, but is not limited thereto. The rotation speed of the semiconductor substrate 130 can be from approximately 10 rpm to approximately 500 rpm; for example, from approximately 30 rpm to approximately 200 rpm; for example, from approximately 50 rpm to approximately 150 rpm; for example, from approximately 50 rpm to approximately 100 rpm; for example, from approximately 50 rpm to approximately 90 rpm, but is not limited thereto. Since the rotational speeds of the semiconductor substrate 130 and the polishing pad 100 meet the specified range, the flowability of the slurry under centrifugal force can be appropriately ensured in relation to the water leakage prevention effect at the interface between the uppermost surface of the window 102 and the first surface 11. That is, since the polishing slurry moves at an appropriate flow rate across the first surface 11 and the uppermost surface of the window 102, it is more advantageous for the polishing pad 100, which possesses a multi-level adhesive layer structure having the first adhesive layer 30 and the second adhesive layer 40, and simultaneously has the compression structure of the support layer 20 and the barrier layer, to maximize the amount of polishing slurry leakage at the interface between the uppermost surface of the window 102 and the first surface 11, thus enhancing its water leakage prevention effect.

[0201] The method of manufacturing the semiconductor device may further include the step of supplying polishing slurry 150 onto the first surface 11. For example, the polishing slurry 150 may be sprayed onto the first surface 11 through a supply nozzle 140. The flow rate of the polishing slurry 150 sprayed through the supply nozzle 140 may be, for example, about 10 mL / min to about 1000 mL / min, for example, about 10 mL / min to about 800 mL / min, for example, about 50 mL / min to about 500 mL / min, but is not limited thereto. Since the spray flow rate of the polishing slurry 150 meets the aforementioned range, the polishing slurry moves at an appropriate flow rate on the first surface 11 and the uppermost surface of the window 102, thereby maximizing the amount of polishing slurry leakage through the interface between the uppermost surface of the window 102 and the first surface 11. This is more advantageous in terms of the multi-level adhesive layer structure having the first adhesive layer 30 and the second adhesive layer 40, and simultaneously having the compression structure of the support layer 20 and the water leakage prevention effect of the polishing pad 100 having the barrier layer.

[0202] The polishing slurry 150 may also contain polishing particles, such as silica particles or cerium dioxide particles, but is not limited thereto.

[0203] The method for manufacturing the semiconductor device may further include the step of processing the first surface 11 using a trimmer 170. The step of processing the first surface 11 using the trimmer 170 may be performed simultaneously with the step of polishing the semiconductor substrate 130.

[0204] The dresser 170 can process the first surface 11 while rotating. The rotation speed of the dresser 170 can be, for example, about 50 rpm to about 150 rpm, for example, about 50 rpm to about 120 rpm, for example, about 90 rpm to about 120 rpm.

[0205] The dressing device 170 can process the first surface 11 while applying pressure. The pressure load applied by the dressing device 170 to the first surface 11 can be, for example, from about 1 lb to about 10 lb, or, for example, from about 3 lb to about 9 lb.

[0206] The dresser 170 can process the first surface 11 while vibrating along a reciprocating path from the center of the polishing pad 100 to its end. When the reciprocating motion of the dresser 170 from the center of the polishing pad 100 to its end is counted as one cycle, the vibration speed of the dresser 170 can be from about 10 times / minute to about 30 times / minute, for example, from about 10 times / minute to about 25 times / minute, for example, from about 15 times / minute to about 25 times / minute.

[0207] During the polishing process, the semiconductor substrate 130 is polished under pressure on the polishing surface. As a result, the exposed porous structure of the first surface 11, which is the polishing surface, is compressed, gradually becoming unsuitable for polishing due to its lower surface roughness. To prevent this, the first surface 11 is cut by the dresser 170, which has a roughening surface, while maintaining a surface condition suitable for polishing. However, if the cut portion of the first surface 11 is not quickly removed and remains on the polishing surface, it may cause defects such as scratches on the polished surface of the semiconductor substrate 130. Therefore, by satisfying the driving conditions of the dresser 170, i.e., the rotation speed and pressure conditions, the surface structure of the first surface 11 can be maintained, thus maintaining the excellent water leakage prevention effect of the polishing pad 100, and simultaneously ensuring defect prevention on the polished surface of the semiconductor substrate 130.

[0208] The method for fabricating the semiconductor device may further include a step of detecting the polishing endpoint of the polished surface of the semiconductor substrate 130 by passing light emitted from the light source 180 back and forth through the window 102. (Refer to...) Figure 2 and Figure 8 Since the second through hole 201 is connected to the first through hole 101, the light emitted from the light source 180 can ensure a light path through the entire thickness from the uppermost end face to the lowermost end face of the polishing pad 100, and the optical endpoint detection method through the window 102 can be applied.

[0209] As described above, the polishing process using the polishing pad 100 can be performed simultaneously with the supply of a fluid such as a liquid slurry to the first surface 11. In this case, components originating from this fluid can flow in from the interface between the window 102 and the first surface 11. If the fluid components that pass through in this way flow into the polishing pad 100 and the lower end of the platform 120 via the second through-hole 201, it may cause malfunction of the light source 180, or fogging of the lowermost surface of the window 102, thus interfering with accurate endpoint detection. Based on this viewpoint, the polishing pad 100 ensures the support surface of the window 102 on the third surface 21 by forming the second through hole 201 in a manner smaller than the first through hole 101. At the same time, a multi-level adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 is formed on the support surface. A compression portion CR is provided in the area of ​​the support layer 20 corresponding to the lowermost end face of the window 102. The barrier layer 50 is formed on one side of the second adhesive layer 40, which can effectively prevent fluid components from the polishing slurry 150 and the like from flowing into the lower end of the platform 120 or causing fogging on the lowermost end face of the window 102.

[0210] The following presents specific embodiments of the present invention. However, the embodiments described below are merely illustrative or descriptive of the invention, and the scope of the invention is not to be limited thereto; rather, it is defined by the claims.

[0211] <Manufacturing Example>

[0212] Manufacturing Example 1: Manufacturing of Polishing Layer Composition

[0213] Relative to a total of 100 parts by weight of diisocyanate components, a mixture of 72 parts by weight of 2,4-TDI, 18 parts by weight of 2,6-TDI, and 10 parts by weight of H 12 MDI. 90 parts by weight of PTMG and 10 parts by weight of DEG are mixed relative to a total of 100 parts by weight of the polyol component. 148 parts by weight of the polyol component are mixed relative to a total of 100 parts by weight of the diisocyanate component to prepare a mixed raw material. The mixed raw material is added to a four-necked flask and reacted at 80°C to prepare a polishing layer composition comprising a urethane-based prepolymer and an isocyanate group content (NCO%) of 9.3% by weight.

[0214] Manufacturing Example 2: Manufacturing of Window Composition

[0215] Relative to a total of 100 parts by weight of diisocyanate components, a mixture of 64 parts by weight of 2,4-TDI, 16 parts by weight of 2,6-TDI, and 20 parts by weight of H 12MDI. 47 parts by weight of PTMG, 47 parts by weight of PPG, and 6 parts by weight of DEG were mixed relative to a total of 100 parts by weight of the polyol component. 180 parts by weight of the polyol component were mixed relative to a total of 100 parts by weight of the diisocyanate component to prepare a mixed feedstock. The mixed feedstock was added to a four-necked flask and reacted at 80°C to prepare a window composition comprising a urethane-based prepolymer and an isocyanate group content (NCO%) of 8% by weight.

[0216] <Examples and Comparative Examples>

[0217] Example 1

[0218] Relative to 100 parts by weight of the polishing layer composition of Preparation Example 1, 1.0 part by weight of a solid foaming agent (Nouryon Corporation) was mixed, and 4,4'-methylenebis(2-chloroaniline) (MOCA) was mixed as a curing agent, such that the molar ratio of the MOCA's amino groups (-NH2) to isocyanate groups (-NCO) in the polishing layer composition was 1.0 to 0.95. The polishing layer composition was injected into a mold preheated to 90°C, measuring 1000 mm wide, 1000 mm long, and 3 mm high, at an injection rate of 10 kg / min, while nitrogen (N2) was injected as a gaseous foaming agent at an injection rate of 1.0 L / min. The polishing layer was then prepared by post-curing the pre-composed composition at 110°C. The polishing layer was then turned to a thickness of 2.03 mm, and grooves with a depth of 460 μm, a width of 0.85 mm, and a spacing of 3.0 mm were machined on the polished surface.

[0219] Relative to 100 parts by weight of the window composition of Preparation Example 2, 4,4'-methylenebis(2-chloroaniline) (MOCA) was mixed as a curing agent, such that the molar ratio of the amine groups (-NH2) of MOCA was 0.95 relative to 1.0 of the isocyanate groups (-NCO) in the polishing layer composition. The window composition was injected into a mold preheated to 90°C with a width of 1000 mm, a length of 1000 mm, and a height of 3 mm at an injection rate of 10 kg / min, and the window was prepared by post-curing at a temperature of 110°C. The thicknesses of the windows were manufactured to meet the requirements of Table 1 below, and the length and width were manufactured to be 60 mm and 20 mm, respectively.

[0220] A support layer was prepared, having a structure in which urethane resin is impregnated in a nonwoven fabric including polyester resin fibers and a thickness of 1.4 mm.

[0221] An adhesive film containing a thermoplastic urethane-based adhesive is provided on the opposite side (second surface) of the polished surface of the polished layer, and then a first through hole is formed from the first surface of the polished layer (which is the polished surface) to the second surface. The first through hole is formed in the shape of a cuboid with a width of 20 mm and a length of 60 mm.

[0222] Next, a barrier layer with a 1 μm thick polyvinylidene chloride (PVDC) hydrophobic barrier coating is formed on an 11.5 μm thick polyethylene terephthalate (PET) film. An adhesive film containing a thermoplastic urethane-based adhesive is formed on one side (third surface) of the support layer. The barrier layer is then formed on the adhesive film. The barrier layer and the second surface of the polished layer are brought into contact by bonding them together. The second adhesive layer is then melt-treated at 140°C using a pressure roller to form a second adhesive layer.

[0223] Next, a second through hole is formed in the thickness direction by cutting from the bottom end face of the support layer. The second through hole is formed in the region corresponding to the first through hole and connected to the first through hole. The second through hole is formed in the shape of a cuboid with a width of 52 mm and a length of 14 mm.

[0224] Reference Figure 2 Since the second through-hole 201 is formed in a manner smaller than the first through-hole 101, a water-curing adhesive composition containing approximately 97.75 (±1.25) wt% urethane-based prepolymer formed by polymerizing monomer components comprising an aromatic diisocyanate and a polyol of Formula 1, and approximately 2.25 (±1.25) wt% unreacted aromatic diisocyanate of Formula 1 is coated onto the upper part of the second adhesive layer 40 exposed to the outside. This is then subjected to aging for 2 hours. During this time, the water-curing adhesive composition is applied using a dispenser with a supply nozzle having a diameter of 100 μm. Next, the window 102 is positioned within the first through-hole 101, supported by the surface coated with the water-curing adhesive composition, and pressurized with a load of 100 N for 1 second, followed by an additional pressurization of 900 N for 10 seconds.

[0225] Next, by applying pressure to the lowermost end face (fourth surface) of the support layer 20, a compression portion CR is formed in a predetermined area along the direction from the side of the second through hole 201 toward the interior of the support layer 20.

[0226] As a result, a multi-level adhesive layer including the first adhesive layer 30 and the second adhesive layer on the lowermost end face of the window, including a barrier layer, and a polishing pad with a total thickness of 3.4 mm is manufactured, including a compression portion CR in the support layer.

[0227] The values ​​relating to the first adhesive layer, the second adhesive layer, the compressed portion and the uncompressed portion of the support layer, and the groove are shown in Table 1 below.

[0228] Example 2

[0229] The polishing pad was manufactured in the same manner as in Example 1, except that a barrier layer with a 0.1 μm thick aluminum (Al) deposition layer was applied to a 18.9 μm thick polyethylene terephthalate (PET) film instead of the barrier layer.

[0230] Comparative Example 1

[0231] Except that the first adhesive layer is not disposed between the side of the first through hole and the side of the window, the barrier layer is absent, and a compression portion is provided on the support layer, the polishing pad was manufactured in the same manner as in Embodiment 1.

[0232] Comparative Example 2

[0233] Except that the support layer has a compression portion, the barrier layer is absent, and the first adhesive layer is present, the polishing pad was manufactured in the same manner as in Embodiment 1.

[0234] Comparative Example 3

[0235] The polishing pad was manufactured in the same manner as in Example 1, except that the barrier layer was absent.

[0236] <Evaluation and Measurement>

[0237] Test Example 1: Evaluation of Surface Hardness of Polished Layer and Window

[0238] Samples were prepared by cutting the polished layers of the embodiments and comparative examples into pieces with a length and width of 3cm × 3cm. Samples were also prepared by cutting windows of the embodiments and comparative examples into pieces with a length and width of 3cm × 3cm. After storing the samples at 25°C for 12 hours, the Shore D hardness was measured using a hardness tester and expressed as the surface hardness under dry conditions at room temperature (S1, S2). Furthermore, the window samples were immersed in water at 30°C, 50°C, and 70°C for 30 minutes, and the Shore D hardness was measured using a hardness tester and expressed as the wet hardness at 30°C (S3), 50°C (S4), and 70°C (S5), respectively. The results are shown in Table 1 below.

[0239] Test Example 2: Leakage Test

[0240] The polishing pads of the embodiments and comparative examples were mounted on the platform of a polishing apparatus (CTS AP300). A TEOS wafer was mounted on the polishing head. Polishing was performed for over 50 hours at a polishing head rotation speed of 87 rpm, a polishing head pressure load of 3.5 psi on the polishing pad, a platform rotation speed of 93 rpm, a pure water (DI water) injection flow rate of 200 mL / min, a dresser (CI 45) rotation speed of 101 rpm, and a dresser vibration speed of 19 times / min until the grooves of the polishing pad were smoothed. Leakage was checked every hour. If no condensation was visually observed on the bottom surface of the window or on the platform after the entire evaluation time, it was marked as "None." If condensation occurred on the bottom surface of the window or on the platform, the polishing time up to the point of occurrence was marked. The leakage test results are shown in Table 1 below.

[0241] Test Example 3: Air Leak Test

[0242] Figure 7 This is a diagram that schematically illustrates the air leakage measurement process of the polishing pad. (Refer to...) Figure 7 The air leakage value was derived as follows: For the polishing pad, a holder 300 was installed and sealed on the lower surface of the support layer corresponding to the periphery of the window. Then, a pressure reduction of 5 seconds was applied at -1 bar, and the pressure change was measured after stabilization by maintaining the pressure reduction for 10 seconds. The results are shown in Table 1 below.

[0243] [Table 1]

[0244]

[0245] Referring to the results in Table 1, it can be confirmed that in the case of the polishing pads in Embodiments 1 and 2, since the lowermost end face of the window is supported by the third surface of the support layer, and a multi-level adhesive layer with a first adhesive layer and a second adhesive layer is provided between the lowermost end face of the window and the third surface of the support layer, and the support layer has a compression portion in the area corresponding to the lowermost end face of the window, and also includes the barrier layer, it presents a 1.0 × 10 -4 Below cc / min (0.001 = 1 mbar), more specifically, less than 5.0 × 10⁻⁶. -5 The air leakage value of cc / min (0.001 = 1 mbar) shows excellent water leakage test results. In contrast, the polishing pads of Comparative Examples 1 to 3, which lack at least one of the multi-stage adhesive layer, the compression section, and the barrier layer, can be confirmed to exhibit lower water leakage prevention effect compared with the polishing pads of Examples 1 to 2.

[0246] As described above, the polishing pad in one embodiment is a polishing pad that can perform endpoint detection by applying a window. At the same time, a multi-level adhesive layer structure is applied to the lowermost end face of the window, and a compression portion is provided in a specific area of ​​the support layer. By applying a barrier layer, the adverse factors caused by the local consistency of the portion introduced into the window, namely the possibility of water leakage, are substantially eliminated, thereby maximizing the lifespan of the polishing pad that needs to be replaced after a specified period of use. The water leakage prevention effect is maximized during the use of the polishing pad, thereby functioning as a process component capable of manufacturing excellent semiconductor devices.

[0247] Explanation of reference numerals in the attached figures

[0248] 100, 100', 200: Polishing pads

[0249] 10: Polished layer

[0250] 11: First surface, polished surface

[0251] 12: Second Surface

[0252] 101: First through hole

[0253] 102: Window

[0254] 20: Support layer

[0255] 21: Third Surface

[0256] 22: Fourth Surface

[0257] 201: Second through hole

[0258] 30: First adhesive layer

[0259] 40: Second adhesive layer

[0260] 50: Barrier layer

[0261] 111: Trench

[0262] 112: Stomata

[0263] 113: Minute depressions

[0264] 103: Recessed part

[0265] 300: Retainer

[0266] 120: Platform

[0267] 130: Semiconductor substrate

[0268] 140: Supply nozzle

[0269] 150: Polishing slurry

[0270] 160: Polishing head

[0271] 170: Dresser

[0272] 180: Light source

[0273] CR: Width of the compression section

[0274] NCR: Non-compressible part

[0275] D1: Thickness of the polished layer

[0276] D2: Window thickness

[0277] d1: Depth of the trench

[0278] d2: Depth of the recess

[0279] d3: Height difference between the first surface and the topmost surface of the window

[0280] L1: Length of the first adhesive layer

[0281] W2: Width of the window support surface in the third surface

[0282] W3: Width of the first adhesive layer

[0283] H1: Thickness of the non-compressible portion

[0284] H2: Thickness of the compression section

[0285] w1: Width of the trench

[0286] p1: Spacing of the trenches

Claims

1. A polishing pad, wherein, include: The polished layer includes a first surface as a polished surface and a second surface as the opposite surface of the first surface, and includes a first through hole extending from the first surface to the second surface; The window is configured within the first through hole; as well as A support layer, disposed on the second surface side of the polished layer, includes a third surface on the polished layer side and a fourth surface as the opposite side of the third surface, and includes a second through hole extending from the third surface to the fourth surface and simultaneously connected to the first through hole. The second through hole is smaller than the first through hole. The bottom edge of the window is supported by the third surface. A first adhesive layer is included between the bottommost surface of the window and the third surface. A second adhesive layer is included between the second surface and the third surface, and between the lowermost end face of the window and the third surface. A barrier layer is included on one surface of the second adhesive layer. The support layer includes a compression section in the region corresponding to the bottommost surface of the window. The compression section has a continuous structure such that it includes all portions corresponding to the lowest end face of the window from the side of the second through hole along the direction toward the interior of the support layer. The moisture permeability of the barrier layer is 0 g / m³. 2 / Daily up to 40g / m 2 / sky.

2. The polishing pad according to claim 1, wherein, The first adhesive layer contains a moisture-curing resin. The second adhesive layer comprises a thermoplastic resin.

3. The polishing pad according to claim 1, wherein, The first adhesive layer is not disposed between the side of the first through hole and the side of the window.

4. The polishing pad according to claim 1, wherein, The first adhesive layer is also disposed between the side of the first through hole and the side of the window.

5. The polishing pad according to claim 1, wherein, The barrier layer comprises one selected from the group consisting of resin films, metal-deposited resin films, inorganic film-deposited resin films, hydrophobic barrier coating resin films, particle-dispersed resin films, inorganic films, metal films, and combinations thereof.

6. The polishing pad according to claim 1, wherein, The support layer includes non-compressible portions in areas other than the compressed portions. The percentage of the thickness of the compressed portion relative to the thickness of the non-compressed portion is 0.01% to 80%.

7. The polishing pad according to claim 1, wherein, The first surface includes at least one trench. The trench has a depth of 100μm to 1500μm and a width of 0.1mm to 20mm.

8. The polishing pad according to claim 7, wherein, The first surface includes multiple trenches. The plurality of grooves include concentric circular grooves. The interval between two adjacent concentric circular grooves is 2mm to 70mm.

9. The polishing pad according to claim 1, wherein, The bottom surface of the window includes a recess.

10. The polishing pad according to claim 9, wherein, The depth of the recess is 0.1 mm to 2.5 mm.

11. The polishing pad according to claim 1, wherein, The window comprises a non-foamed cured material of a window composition containing a first urethane-based prepolymer. The polishing layer comprises a foamed and cured polishing layer composition containing a second urethane prepolymer.

12. The polishing pad according to claim 1, wherein, The Shore D hardness measured on the first surface under normal temperature and dry conditions is less than the Shore D hardness measured on the uppermost surface of the window under normal temperature and dry conditions.

13. A method for manufacturing a semiconductor device, wherein, include: The step of providing a polishing pad having a polishing layer, the polishing layer including a first surface as a polishing surface and a second surface as the opposite surface of the first surface, including a first through hole extending from the first surface to the second surface, including a window disposed in the first through hole; as well as The step involves configuring the first surface and the surface to be polished of the object to be polished into contact with each other, and then polishing the object while rotating the polishing pad and the object to be polished relative to each other under pressure. The object to be polished includes a semiconductor substrate. The polishing pad further includes a support layer disposed on the second surface side of the polishing layer. The support layer includes a third surface on the polishing layer side and a fourth surface opposite to the third surface, and includes a second through hole extending from the third surface to the fourth surface and simultaneously connected to the first through hole. The second through hole is smaller than the first through hole. The bottom edge of the window is supported by the third surface. A first adhesive layer is included between the bottommost surface of the window and the third surface. A second adhesive layer is included between the second surface and the third surface, and between the lowermost end face of the window and the third surface. A barrier layer is included on one surface of the second adhesive layer. The support layer includes a compression section in the region corresponding to the bottommost surface of the window. The compression section has a continuous structure such that it includes all portions corresponding to the lowest end face of the window from the side of the second through hole along the direction toward the interior of the support layer. The moisture permeability of the barrier layer is 0 g / m³. 2 / Daily up to 40g / m 2 / sky.

14. The method for manufacturing a semiconductor device according to claim 13, wherein, It also includes the step of supplying polishing slurry to the first surface. The polishing slurry is sprayed onto the first surface through a supply nozzle. The flow rate of the polishing slurry sprayed through the supply nozzle is from 10 mL / min to 1,000 mL / min.

15. The method for manufacturing a semiconductor device according to claim 13, wherein, The rotational speeds of the polishing object and the polishing pad are 10 rpm to 500 rpm, respectively.

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