Anti-counterfeiting element and anti-counterfeiting product

By designing an integrally molded magnetic region with the same magnetic flux but different side lengths and coercivity in the magnetic anti-counterfeiting element, the problem of low anti-counterfeiting performance in the prior art is solved, and a stronger anti-counterfeiting effect and concealment are achieved.

CN116187380BActive Publication Date: 2026-02-06ZHONGCHAO SPECIAL SECURITY TECH +1
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Patent Information

Application Number
CN202111417179.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-11-25
Publication Date
2026-02-06
Estimated Expiration
2041-11-25

AI Technical Summary

Technical Problem

Existing magnetic anti-counterfeiting components have low anti-counterfeiting capabilities and are easily counterfeited.

Method used

Design an anti-counterfeiting element comprising a substrate, an coded first magnetic region and a second magnetic region, both having the same magnetic flux under the same magnetization conditions, but different side lengths along different axes, and integrally formed as a continuous magnetic region with different coercivity strength and width ratio, thus generating different signal characteristics.

Benefits of technology

This improves the anti-counterfeiting effect of the anti-counterfeiting element, enabling it to generate different machine recognition information features in vertical and horizontal reading modes, increasing its concealment and anti-counterfeiting performance, and making it difficult to be counterfeited.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application provides a kind of anti-fake element and anti-fake product.The anti-fake element at least includes: a substrate; a first magnetic region that can be encoded, the first magnetic region is arranged on the substrate; a second magnetic region that can be encoded, the second magnetic region is arranged on the substrate, the magnetic flux of the first side of the first magnetic region and the magnetic flux of the first side of the second magnetic region are the same under the same magnetization condition, the length of the first side of the first magnetic region and the first side of the second magnetic region along the second axis is different, and one second side of the first magnetic region and one second side of the second magnetic region are located in the same plane; wherein, the side of the first magnetic region and the second magnetic region perpendicular to the first axis is the first side, the side of the first magnetic region and the second magnetic region perpendicular to the second axis is the second side, and the first axis is perpendicular to the second axis.The application solves the problem of low anti-fake performance of the anti-fake element in the prior art.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of magnetic anti-counterfeiting, in particular to an anti-counterfeiting element and an anti-counterfeiting product. BACKGROUND

[0002] Applying an encodable magnetic anti-counterfeiting element in a valuable document is an increasingly adopted anti-counterfeiting means. The magnetic anti-counterfeiting element with encoding function is used to check the authenticity of information carriers such as valuable documents, and to realize the rapid machine reading of valuable documents.

[0003] In the field of magnetic encoding anti-counterfeiting technology, the machine reading mode of magnetic encoding includes longitudinal reading and transverse reading, which are respectively applied to different financial instrument use scenarios. The traditional magnetic encoding anti-counterfeiting element is to print discontinuous magnetic regions with the same thickness on the surface of the substrate, and the intervals between the magnetic regions constitute a certain encoding sequence. Patents WO9008367A1, CN107089066B, etc. introduce this encoding technology. In addition, using magnetic regions with different thicknesses or using magnetic regions with different material properties for encoding is also a common encoding method. Patents EP0310707A2, EP0428779A1, etc. introduce this encoding technology. The existing anti-counterfeiting element has single wave feature detection in machine transverse and longitudinal reading processes, and the anti-counterfeiting property is not high, which is easy to be imitated.

[0004] That is, the existing anti-counterfeiting element has the problem of low anti-counterfeiting property. SUMMARY

[0005] The main purpose of the present application is to provide an anti-counterfeiting element and an anti-counterfeiting product to solve the problem of low anti-counterfeiting property of the existing anti-counterfeiting element.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, an anti-counterfeiting element is provided, at least comprising: a substrate; an encodable first magnetic region, the first magnetic region being arranged on the substrate; an encodable second magnetic region, the second magnetic region being arranged on the substrate, under the same magnetization condition, the magnetic flux of the first side surface of the first magnetic region and the magnetic flux of the first side surface of the second magnetic region are the same, the length of the first side surface of the first magnetic region and the first side surface of the second magnetic region along the second axis are different, and one second side surface of the first magnetic region and one second side surface of the second magnetic region are located on the same plane; wherein the side surface perpendicular to the first axis in the first magnetic region and the second magnetic region is the first side surface, the side surface perpendicular to the second axis in the first magnetic region and the second magnetic region is the second side surface, and the first axis is perpendicular to the second axis.

[0007] Further, the first magnetic region and the second magnetic region are integrally formed as a continuous magnetic region.

[0008] Further, the first magnetic region and the second magnetic region are arranged along an extension direction of the first axis.

[0009] Further, the first magnetic region and the second magnetic region are arranged along an extension direction of the first axis.

[0010] Further, the coercive force of the first magnetic region and the coercive force of the second magnetic region are different.

[0011] Further, the area of the first side surface of the first magnetic region and the area of the first side surface of the second magnetic region are the same.

[0012] Further, the thickness of the first magnetic region is smaller than the thickness of the second magnetic region, and the width of the first magnetic region along the extension direction of the second axis is larger than the width of the second magnetic region.

[0013] Further, the ratio of the thickness of the second magnetic region to the thickness of the first magnetic region is the same as the ratio of the width of the first magnetic region to the width of the second magnetic region.

[0014] Further, the signal feature detected by the magnetic sensor along the first axis on the anti-counterfeiting element is a combined waveform of at least one positive half wave and at least one negative half wave, and the number of positive half waves and the number of negative half waves are the same.

[0015] Further, the signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element is a combined waveform of at least two negative half waves and at least one positive half wave, or a combined waveform of at least two positive half waves and at least one negative half wave, and the number of positive half waves and the number of negative half waves are different.

[0016] Further, the second magnetic region comprises a plurality of second sub-regions, each of the second sub-regions is connected to the first magnetic region, and the plurality of second sub-regions are arranged at intervals along the extension direction of the second axis.

[0017] Further, the base material comprises at least one of paper and film.

[0018] According to another aspect of the present application, there is provided an anti-counterfeiting product comprising the anti-counterfeiting element described above.

[0019] Further, the anti-counterfeiting product comprises banknotes, bank bills, tickets, certificates, documents, credit cards, and product packaging.

[0020] The technical scheme of the present application comprises at least a base material, a first magnetic region and a second magnetic region, the first magnetic region is arranged on the base material, the second magnetic region is arranged on the base material, the magnetic flux of the first side of the first magnetic region is the same as the magnetic flux of the first side of the second magnetic region under the same magnetization condition, the length of the first side of the first magnetic region and the length of the first side of the second magnetic region along the second axis are different, and one second side of the first magnetic region and one second side of the second magnetic region are located on the same plane, wherein the side of the first magnetic region and the second magnetic region perpendicular to the first axis is the first side, the side of the first magnetic region and the second magnetic region perpendicular to the second axis is the second side, and the first axis is perpendicular to the second axis.

[0021] By setting the magnetic flux of the first side of the first magnetic region and the magnetic flux of the first side of the second magnetic region to be the same, there is no change of the magnetic flux inside the anti-fake element when the magnetic sensor scans the anti-fake element when the magnetic sensor detects the anti-fake element along the first axis. By setting the length of the first side of the first magnetic region and the length of the first side of the second magnetic region along the second axis to be different, and by setting one second side of the first magnetic region and one second side of the second magnetic region to be located on the same plane, the magnetic sensor detects the anti-fake element along the second axis, and the magnetic flux inside the anti-fake element changes, so that the signal characteristics detected by the magnetic sensor along the first axis and the signal characteristics detected by the magnetic sensor along the second axis are different, which increases the anti-fake effect of the anti-fake element, and makes the anti-fake element not easy to be imitated. BRIEF DESCRIPTION OF DRAWINGS

[0022] The accompanying drawings, which form a part of the present application, are used to provide further understanding of the present application, and the illustrative embodiments of the present application and their descriptions are used to explain the present application, and do not constitute improper limitations on the present application. In the drawings:

[0023] Figure 1 A first axis and a second axis signal characteristics of a conventional anti-fake element in the prior art under magnetic sensor detection are shown;

[0024] Figure 2 A first axis and a second axis signal characteristics of another conventional anti-fake element in the prior art under magnetic sensor detection are shown;

[0025] Figure 3 A schematic diagram of the overall structure of an anti-fake element according to Embodiment One of the present application is shown;

[0026] Figure 4 A schematic diagram of the overall structure of an anti-fake element according to Embodiment Two of the present application is shown; Figure 3 A view of one angle of the anti-fake element in Embodiment Two is shown;

[0027] Figure 5A view of the anti-counterfeiting element is shown Figure 3 A view of the anti-counterfeiting element is shown

[0028] Figure 6 A view of the anti-counterfeiting element is shown Figure 3 A view of the anti-counterfeiting element is shown

[0029] Figure 7 A view of the anti-counterfeiting element is shown

[0030] Wherein, the above-mentioned drawings include the following reference signs:

[0031] 10, first magnetic region; 20, second magnetic region; 21, sub-region. DETAILED DESCRIPTION

[0032] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in combination with embodiments.

[0033] It should be noted that, unless otherwise specified, all technical and scientific terms used in the present application have the same meaning as generally understood by those skilled in the art to which the present application belongs.

[0034] In the present application, unless otherwise specified, the orientation words such as "upper", "lower", "top", "bottom" are generally directed to the directions shown in the drawings, or are directed to the vertical, perpendicular or gravity directions of the components themselves; similarly, for the convenience of understanding and description, "inner" and "outer" refer to the inner and outer relative to the contour of the components themselves, but the above-mentioned orientation words are not used to limit the present application.

[0035] As Figure 1 and Figure 2 , the magnetic coding anti-counterfeiting element in the existing magnetic coding technology has the same detection waveform in the longitudinal and transverse reading, which is usually a combination waveform of one positive half wave and one negative half wave. Using these magnetic coding elements for coding, when the machine is in the longitudinal reading mode, the coding information is a combination waveform of paired positive and negative half waves; when the machine is in the transverse reading mode, the positive and negative half waves of the coding information also appear in pairs. The structure of these magnetic coding elements is simple, the detection waveform is single, and by analyzing the detection waveform in the transverse reading mode, the detection waveform in the longitudinal reading mode can be easily inferred, which does not have high anti-counterfeiting property and is easy to be counterfeited. As is known to all, as a magnetic coding element for machine reading, it not only needs to be able to code and identify the machine reading information, but also needs to have higher concealment and anti-counterfeiting property.

[0036] In order to solve the problem of low anti-counterfeiting property of the anti-counterfeiting element in the prior art, the present application provides an anti-counterfeiting element and an anti-counterfeiting product.

[0037] like Figures 3 to 7 As shown, the anti-counterfeiting element includes at least a substrate, a coded first magnetic region 10, and a coded second magnetic region 20. The first magnetic region 10 is disposed on the substrate; the second magnetic region 20 is disposed on the substrate. Under the same magnetization conditions, the magnetic flux of the first side of the first magnetic region 10 and the magnetic flux of the first side of the second magnetic region 20 are the same. The lengths of the first side of the first magnetic region 10 and the first side of the second magnetic region 20 along the second axis are different, and one second side of the first magnetic region 10 and one second side of the second magnetic region 20 are located on the same plane. Among them, the side of the first magnetic region 10 and the second magnetic region 20 that is perpendicular to the first axis is the first side, and the side of the first magnetic region 10 and the second magnetic region 20 that is perpendicular to the second axis is the second side. The first axis is perpendicular to the second axis.

[0038] By setting the magnetic flux of the first side of the first magnetic region 10 and the first side of the second magnetic region 20 to be the same, when the magnetic sensor detects the anti-counterfeiting element along the first axis, no change in magnetic flux occurs inside the anti-counterfeiting element during scanning. However, by setting the lengths of the first side of the first magnetic region 10 and the first side of the second magnetic region 20 along the second axis to be different, and by having one second side of the first magnetic region 10 and one second side of the second magnetic region 20 located on the same plane, a change in magnetic flux occurs inside the anti-counterfeiting element when the magnetic sensor detects it along the second axis. This results in a difference between the signal characteristics detected by the magnetic sensor along the first axis and the signal characteristics detected by the magnetic sensor along the second axis, increasing the anti-counterfeiting effect of the anti-counterfeiting element and making it difficult to counterfeit.

[0039] It should be noted that the signal characteristics detected by the magnetic sensor along the first axis of the anti-counterfeiting element are the same as those detected by anti-counterfeiting elements in existing technologies. However, the signal characteristics detected by the magnetic sensor along the second axis of the anti-counterfeiting element are different from those detected by anti-counterfeiting elements in existing technologies. This design makes the anti-counterfeiting element more concealed, making its anti-counterfeiting performance less likely to be detected, further increasing its anti-counterfeiting effectiveness. The advantage of this approach is that during the detection process along the first axis by financial equipment (such as banknote counters), the detection waveform of the magnetic element is the same as that of conventional magnetic encoding elements, providing high concealment. During the detection process along the second axis, it can generate two or more positive or negative half-wave combinations, which is impossible for conventional magnetic encoding elements, resulting in high anti-counterfeiting effectiveness. Moreover, in the detection process of some high-end financial equipment (such as magnetic image detection equipment), the magnetic encoding element can achieve patterned encoding, meeting the needs of different levels of financial equipment.

[0040] In addition, since the width of the first magnetic region 10 is different from the width of the second magnetic region 20, both are relatively independent regions, and there is no mutual superposition effect. The production is carried out in a printing manner, which can reduce the influence of the leveling property of the ink on the side area, improve the accuracy of the magnetic flux size control of the magnetic region, make the detection waveform characteristics of the anti-counterfeiting element more easily identified, and the production process is stable and the yield is high.

[0041] Specifically, the first magnetic region 10 and the second magnetic region 20 are integrally formed as a continuous magnetic region. When the anti-counterfeiting element is made, the first magnetic region 10 and the second magnetic region 20 are integrally formed together to facilitate the production of the anti-counterfeiting element. At the same time, the control of the first magnetic region 10 and the second magnetic region 20 is facilitated.

[0042] As shown in Figure 3 and Figure 4 , the first magnetic region 10 and the second magnetic region 20 are arranged along the extension direction of the first axis. Such arrangement makes the first magnetic region 10 and the second magnetic region 20 can be arranged continuously in the extension direction of the first axis, and further makes the magnetic sensor has no magnetic field change when it transits between the first magnetic region 10 and the second magnetic region 20 when detecting the anti-counterfeiting element along the first axis, which ensures that the signal characteristics detected by the magnetic sensor when detecting the anti-counterfeiting element in the present application and detecting the conventional anti-counterfeiting element are the same.

[0043] As shown in Figure 3 and Figure 4 , the first magnetic region 10 and the second magnetic region 20 are arranged adjacent to each other. Such arrangement makes the first magnetic region 10 and the second magnetic region 20 arranged adjacent to each other, and further makes the first magnetic region 10 and the second magnetic region 20 have a part of the region connected to form a continuous magnetic signal, and the magnetic flux will not change when transiting between the first magnetic region 10 and the second magnetic region 20.

[0044] Specifically, the area of the first side of the first magnetic region 10 and the area of the first side of the second magnetic region 20 are the same, and the area of the second side of the first magnetic region 10 and the area of the second side of the second magnetic region 20 are different. The magnetic flux at the first side and the second side is controlled by controlling the area of the first side and the second side, so as to ensure that the magnetic flux of the first side of the first magnetic region 10 and the magnetic flux of the first side of the second magnetic region 20 are the same, while the magnetic flux of the second side of the first magnetic region 10 and the magnetic flux of the second side of the second magnetic region 20 are different.

[0045] As shown in Figure 3As shown, the thickness of the first magnetic region 10 is less than the thickness of the second magnetic region 20, and the width of the first magnetic region 10 is greater than the width of the second magnetic region 20 along the extension direction of the second axis. Such arrangement facilitates controlling the area of the first side of the first magnetic region 10 to be the same as the area of the first side of the second magnetic region 20, while the area of the second side of the first magnetic region 10 is different from the area of the second side of the second magnetic region 20, so that the signal feature detected by the magnetic sensor along the first axis on the anti-counterfeiting element is different from the signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element.

[0046] Specifically, the ratio of the thickness of the second magnetic region 20 to the thickness of the first magnetic region 10 is the same as the ratio of the width of the first magnetic region 10 to the width of the second magnetic region 20. Such arrangement makes the signal feature detected by the magnetic sensor along the first axis on the anti-counterfeiting element different from the signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element, and the signal features in the two directions can be predicted.

[0047] Specifically, the signal feature detected by the magnetic sensor along the first axis on the anti-counterfeiting element is a combined waveform of at least one positive half-wave and at least one negative half-wave, and the number of positive half-waves is the same as the number of negative half-waves. The signal feature detected by the magnetic sensor along the first axis on a conventional anti-counterfeiting element is also a combined waveform of at least one positive half-wave and at least one negative half-wave, and the number of positive half-waves is the same as the number of negative half-waves. The reason for such arrangement is to make the signal feature of the anti-counterfeiting element in the application the same as that of the conventional anti-counterfeiting element when detected along the first axis, so that the anti-counterfeiting property of the second side of the anti-counterfeiting element in the application is not easy to be perceived.

[0048] Specifically, the signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element is a combined waveform of at least two negative half-waves and at least one positive half-wave, or a combined waveform of at least two positive half-waves and at least one negative half-wave, and the number of positive half-waves is different from the number of negative half-waves. Such arrangement makes the signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element in the application different from that detected on the conventional anti-counterfeiting element, so that the anti-counterfeiting element in the application is not easy to be imitated, and the anti-counterfeiting performance of the anti-counterfeiting element in the application is increased.

[0049] Specifically, the substrate includes at least one of paper and film. Such arrangement facilitates forming the first magnetic region 10 and the second magnetic region 20 on the substrate, and paper and film are common and low in cost.

[0050] Specifically, the anti-counterfeiting product includes the anti-counterfeiting element described above. The anti-counterfeiting product with the anti-counterfeiting element described above has good anti-counterfeiting property and is not easy to be imitated.

[0051] Specifically, anti-counterfeiting products include banknotes, banknotes, tickets, certificates, documents, credit cards, and product packaging.

[0052] In this example, the ratio of the thickness of the second magnetic region 20 to the thickness of the first magnetic region 10 is 2, and the ratio of the width of the first magnetic region 10 to the width of the second magnetic region 20 is also 2. Assuming the magnetic flux in the non-magnetic region is 0, the magnetic flux on the first side of the first magnetic region 10 is 2V, the magnetic flux on the second side of the first magnetic region 10 is 1V, the magnetic flux on the first side of the second magnetic region 20 is 2V, and the magnetic flux on the second side of the second magnetic region 20 is 2V. The ratio of the length of the first magnetic region 10 to the length of the second magnetic region 20 is 1.

[0053] like Figure 6 As shown, when the magnetic sensor moves along the first axis to detect, the magnetic flux changes from 0 to 2V from the non-magnetic area to the first side of the first magnetic area 10, forming a positive half-wave with a peak value of 2V. As the magnetic sensor continues to move, the magnetic flux remains unchanged, so there is no waveform. When it moves to the second magnetic area 20, the magnetic flux also does not change, and the magnetic flux remains unchanged until it moves from the second magnetic area 20 to the non-magnetic area, where the magnetic flux changes from 2V to 0, forming a negative half-wave with a peak value of -2V.

[0054] like Figure 6 As shown, when the magnetic sensor moves along the second axis to detect, the magnetic flux changes from 0 to 3V from the non-magnetic area to the second side of the first magnetic area 10 and the second magnetic area 20, forming a positive half-wave with a peak value of 3V. As the magnetic sensor continues to move until the second magnetic area 20 is completely scanned, only the first magnetic area 10 is scanned, and the magnetic flux changes from 3V to 1V, forming a negative half-wave with a peak value of -2V. The magnetic sensor continues to move until the first magnetic area 10 is completely scanned, and the magnetic flux changes from 1V to 0, forming a negative half-wave with a peak value of -V.

[0055] This invention provides a magnetic coding anti-counterfeiting element and anti-counterfeiting product with higher concealment and anti-counterfeiting properties. It can generate different machine-readable information features in vertical and horizontal reading modes, and is low-cost and reliable in manufacturing.

[0056] Optionally, a method for manufacturing anti-counterfeiting elements, wherein the magnetic area of ​​the anti-counterfeiting element is formed by coating magnetic ink onto a gravure printing roller and then printing it onto a substrate surface.

[0057] The anti-counterfeiting elements are produced using gravure printing. The printing rollers used to produce the anti-counterfeiting elements are made using laser engraving.

[0058] Example 2

[0059] As Figure 7 shown, the second magnetic region 20 includes a plurality of second sub-regions 21, each of which is connected with the first magnetic region 10, and the plurality of second sub-regions 21 are arranged at intervals along the extension direction of the second axis. Such arrangement makes the signal characteristics detected by the magnetic sensor along the first axis different from the signal characteristics detected by the magnetic sensor along the second axis.

[0060] Take Figure 7 for example.

[0061] Specifically, when the magnetic sensor moves along the first axis for detection, the magnetic flux changes from 0 to 2V at the first side of the first magnetic region 10 from the external non-magnetic region, forming a positive half-wave with a peak value of 2V, and during the continuous movement of the magnetic sensor, the magnetic flux is unchanged, so there is no waveform, and when moving to the second magnetic region 20, the magnetic flux does not change, and the magnetic flux remains unchanged until the magnetic flux changes from 2V to 0 at the second magnetic region 20 from the external non-magnetic region, forming a negative half-wave with a peak value of -2V.

[0062] Specifically, when the magnetic sensor moves along the second axis for detection, the magnetic flux changes from 0 to 3V at the second side of the first magnetic region 10 and the first second sub-region 21 from the external non-magnetic region, forming a positive half-wave with a peak value of 3V, and during the continuous movement of the magnetic sensor, only the first magnetic region 10 is scanned until the first second sub-region 21 is scanned, the magnetic flux changes from 3V to 1V, forming a negative half-wave with a peak value of -2V, and when the magnetic sensor continues to move to the second second sub-region 21, the magnetic flux changes from 1V to 3V, forming a positive half-wave with a peak value of 2V, and the magnetic sensor continues to scan until the second second sub-region 21 is scanned, the magnetic flux changes from 3V to 1V, forming a negative half-wave with a peak value of -2V, and the magnetic sensor continues to move until the first magnetic region 10 is scanned, the magnetic flux changes from 1V to 0, forming a negative half-wave with a peak value of -V.

[0063] Example Three

[0064] The difference between example one and example two is that the coercive strength of the first magnetic region 10 and the second magnetic region 20 is different.

[0065] The coercive strength of the first magnetic region 10 and the coercive strength of the second magnetic region 20 are different.

[0066] The first magnetic region 10 is composed of a low coercivity magnetic material, preferably about 300 Oe, and the second magnetic region 20 is composed of a high coercivity magnetic material, preferably about 3000 Oe. The first magnetic region 10 and the second magnetic region 20 have different coercivity. The first magnetic region 10 and the second magnetic region 20 are produced by two printing processes. The magnetic sensor is moved along the first axis and the second axis to detect, and the characteristics of the detected waveforms are the same as in Example 1. Because the coercivity of the first magnetic region 10 and the second magnetic region 20 is different in this example, the security of the security element can be further increased by the different coercivity, because the security element can be magnetized by demagnetization with different coercivity, and the security element can have machine recognition characteristics of the coercivity in addition to the waveforms characteristics in Example 1, so that the security of the security element in this example can be further improved.

[0067] Obviously, the above-described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work should belong to the protection scope of the present application.

[0068] It is apparent that the above-described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work should belong to the protection scope of the present application.

[0069] It is to be noted that the terms used herein are only for describing specific embodiments, and are not intended to limit the exemplary embodiments according to the present application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0070] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An anti-counterfeiting element, characterized in that, At least comprising: a substrate; a first encodable magnetic region (10) disposed on the substrate; a second encodable magnetic region (20) disposed on the substrate, a magnetic flux of a first side of the first magnetic region (10) and a magnetic flux of a first side of the second magnetic region (20) are the same under the same magnetization condition, the first side of the first magnetic region (10) and the first side of the second magnetic region (20) are different in length along a second axis, and one second side of the first magnetic region (10) and one second side of the second magnetic region (20) are in the same plane, so that a signal feature detected by a magnetic sensor along a first axis on the anti-counterfeiting element is different from a signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element; the first magnetic region (10) and the second magnetic region (20) are integrally formed as a continuous magnetic region; wherein the side of the first magnetic region (10) and the second magnetic region (20) perpendicular to the first axis is the first side, and the side of the first magnetic region (10) and the second magnetic region (20) perpendicular to the second axis is the second side, and the first axis is perpendicular to the second axis.

2. The security element according to claim 1, characterized in that The first magnetic region (10) and the second magnetic region (20) are arranged along the extension direction of the first axis.

3. The security element according to claim 2, characterized in that The first magnetic region (10) and the second magnetic region (20) are arranged adjacent to each other.

4. The security element according to claim 3, characterized in that The coercive force strength of the first magnetic region (10) and the coercive force strength of the second magnetic region (20) are different.

5. The security element according to claim 1, characterized in that The area of the first side of the first magnetic region (10) and the area of the first side of the second magnetic region (20) are the same.

6. The security element according to claim 1, characterized in that The thickness of the first magnetic region (10) is less than the thickness of the second magnetic region (20), and the width of the first magnetic region (10) is greater than the width of the second magnetic region (20) along the extension direction of the second axis.

7. The security element according to claim 5, characterized in that The ratio of the thickness of the second magnetic region (20) to the thickness of the first magnetic region (10) is the same as the ratio of the width of the first magnetic region (10) to the width of the second magnetic region (20).

8. The security element according to any one of claims 1 to 7, characterized in that The signal feature detected by the magnetic sensor along the first axis on the anti-counterfeiting element is a combined waveform of at least one positive half wave and at least one negative half wave, and the number of the positive half wave and the negative half wave is the same.

9. The security element according to any one of claims 1 to 7, characterized in that The signal feature detected by the magnetic sensor along the second axis on the anti-counterfeiting element is a combined waveform of at least two negative half waves and at least one positive half wave, or a combined waveform of at least two positive half waves and at least one negative half wave, and the number of the positive half wave and the negative half wave is different.

10. The security element according to any one of claims 1 to 7, characterized in that The second magnetic region (20) comprises a plurality of second sub-regions (21), each of the second sub-regions (21) is connected with the first magnetic region (10), and the plurality of second sub-regions (21) are arranged at intervals along the extension direction of the second axis.

11. The security element according to any one of claims 1 to 7, characterized in that The substrate comprises at least one of paper and film.

12. An anti-counterfeiting product characterized in that, The security element according to any one of claims 1 to 11.

13. The security product according to claim 12, characterized in that The security product comprises banknotes, bank bills, tickets, certificates, documents, credit cards, product packaging.

Citation Information

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