Light-emitting device

Abstract

The present invention discloses a light-emitting device comprising a base structure, a light source unit, and a wavelength conversion structure. The light source unit is disposed on the base structure and is configured to emit a first light having a wavelength within a range of 380 to 700 nanometers. The wavelength conversion structure is disposed in the optical path of the first light and is adapted to convert a portion of the first light into a second light. The second light is combined with the remaining first light to form a combined spectrum. The combined spectrum comprises a first wavelength band of 380 to 620 nanometers, a second wavelength band of 660 to 780 nanometers, and an intermediate wavelength band between the first and second wavelength bands. The intensity value of the first wavelength band exhibits an increasing trend, while the intensity value of the second wavelength band exhibits a decreasing trend, with the decreasing trend of the intensity value of the second wavelength band being steeper than the increasing trend of the intensity value of the first wavelength band. This arrangement eliminates or reduces interference caused by red light.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, and in particular to a light-emitting device with a combined spectrum ranging from a violet light band to a red light band. Background Art

[0002] As awareness of home and office security grows, more and more people are installing surveillance equipment for self-protection. Most surveillance equipment uses infrared cameras to capture clear images even in dim conditions. However, the infrared light source in cameras typically includes a red wavelength, so when the camera is activated, passersby may notice a red dot (commonly known as redburst). To eliminate this redburst, some camera manufacturers add visible light elements near the infrared light source to balance the red dot. However, visible light elements also contain a small amount of infrared light, which can affect the camera's image clarity. Alternatively, an infrared filter can be added to the visible light element to remove the infrared wavelength, but this approach reduces energy efficiency and increases costs.

[0003] Therefore, how to reduce the red storm phenomenon and improve energy utilization efficiency is an issue that the industry urgently needs to solve. Summary of the Invention

[0004] The present invention mainly focuses on solving the problem of red light interference. The technical means adopted are: using a wavelength conversion structure to convert the first light emitted by the light source part with a wavelength in the range of 350 nanometers to 700 nanometers into a second light, and the second light is combined with the remaining first light to form a special form of combined spectrum.

[0005] In order to solve the above-mentioned technical problems, a technical solution adopted by the present invention is to provide a light-emitting device, which includes a base structure, a light source unit, and a wavelength conversion structure. The light source unit is arranged on the base structure and is used to emit a first light with a wavelength in the range of 350 nanometers to 700 nanometers. The wavelength conversion structure is arranged on the optical path of the first light, and the wavelength conversion structure is suitable for converting a portion of the first light into a second light, and the second light is combined with the remaining first light to form a combined spectrum. The combined spectrum has a first wavelength band of 380 nanometers to 620 nanometers, a second wavelength band of 660 nanometers to 780 nanometers, and an intermediate wavelength band between the first wavelength band and the second wavelength band. The intensity value of the first wavelength band shows an upward trend, and the intensity value of the second wavelength band shows a downward trend, and the downward trend of the intensity value of the second wavelength band is steeper than the upward trend of the intensity value of the first wavelength band.

[0006] In one embodiment of the present invention, the absolute value of the decreasing slope of the intensity value of the second wavelength band is greater than the absolute value of the increasing slope of the intensity value of the first wavelength band.

[0007] In one embodiment of the present invention, the intermediate wavelength band has a peak.

[0008] In one embodiment of the present invention, the first wavelength band has an intensity less than 30% of the peak intensity of the peak at a wavelength of 440 nanometers.

[0009] In one embodiment of the present invention, the first wavelength band has an intensity less than 80% of the peak intensity of the peak at a wavelength of 600 nanometers.

[0010] In one embodiment of the present invention, the ratio of the integrated area from 380 nm to the peak-peak value to the integrated area from the peak-peak value to 780 nm in the combined spectrum is 1.403-5.248:1. In one embodiment of the present invention, the light source unit includes one or more light-emitting elements with a wavelength of 350 nm to 420 nm, one or more light-emitting elements with a wavelength of 420 nm to 480 nm, one or more light-emitting elements with a wavelength of 600 nm to 700 nm, or any combination thereof.

[0011] In one embodiment of the present invention, the wavelength conversion structure includes a wavelength conversion material, and the wavelength conversion material includes a blue phosphor, a yellow phosphor, a green phosphor, an orange phosphor, a red phosphor, or any combination thereof.

[0012] In one embodiment of the present invention, the light source unit includes one or more light-emitting elements with a wavelength of 350 nm to 420 nm.

[0013] In one embodiment of the present invention, the light source further includes a light emitting element with a wavelength of 600 nm to 700 nm.

[0014] In one embodiment of the present invention, the wavelength conversion structure is only disposed on the one or more light-emitting elements emitting light of 350 nm to 420 nm.

[0015] In one embodiment of the present invention, the light source unit includes a light emitting element with a wavelength of 350 nm to 420 nm and a light emitting element with a wavelength of 420 nm to 480 nm.

[0016] In one embodiment of the present invention, the wavelength conversion structure includes a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer is disposed on the 350-nm to 420-nm light-emitting element and contains a first wavelength conversion material. The second wavelength conversion layer is disposed on the 420-nm to 480-nm light-emitting element and contains a second wavelength conversion material. The first wavelength conversion material is a combination of an orange phosphor, a green phosphor, and a blue phosphor, and the second wavelength conversion material is a combination of a red phosphor and a green phosphor.

[0017] In one embodiment of the present invention, the light source unit includes a violet light emitting element with a wavelength of 350 to 420 nm, a blue light emitting element with a wavelength of 420 to 480 nm, and a red light emitting element with a wavelength of 600 to 700 nm.

[0018] In one embodiment of the present invention, the wavelength conversion structure includes a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer is disposed on the 350-nm to 420-nm light-emitting element and contains a first wavelength conversion material. The second wavelength conversion layer is disposed on the 420-nm to 480-nm light-emitting element and contains a second wavelength conversion material. The first wavelength conversion material is a combination of a green phosphor and a blue phosphor, and the second wavelength conversion material is a combination of a red phosphor and a green phosphor.

[0019] In one embodiment of the present invention, the basic structure includes a carrier and a reflective structure arranged on the carrier, and the carrier and the reflective structure constitute a accommodating cavity for accommodating a 350 nm to 420 nm light-emitting element, a 420 nm to 480 nm light-emitting element, or a 600 nm to 700 nm light-emitting element.

[0020] In one embodiment of the present invention, the carrier has a first region and a second region, a conductive interface is provided in the first region, the 350 nm to 420 nm light-emitting element, the 420 nm to 480 nm light-emitting element or the 600 nm to 700 nm light-emitting element is arranged in the second region and forms an electrical connection with the conductive interface.

[0021] In one embodiment of the present invention, the base structure further includes an insulating layer located between the first region and the second region, and the insulating layer separates the 350 nm to 420 nm light-emitting element, the 420 nm to 480 nm light-emitting element, or the 600 nm to 700 nm light-emitting element from the conductive interface.

[0022] In one embodiment of the present invention, the 350 nm to 420 nm light-emitting element, the 420 nm to 480 nm light-emitting element or the 600 nm to 700 nm light-emitting element is electrically connected to the conductive interface through a wire, and the wire extends from the first region to the second region and passes over the insulating layer.

[0023] In one embodiment of the present invention, the thickness of the insulating layer is smaller than the height of the 350 nm to 420 nm light emitting element, the 420 nm to 480 nm light emitting element, or the 600 nm to 700 nm light emitting element.

[0024] One of the beneficial effects of the present invention is that the light-emitting device of the present invention can maintain the red light intensity required for practical applications without causing a red burst phenomenon through the technical features of "the wavelength conversion structure is arranged on the light path of the first light, the wavelength conversion structure is suitable for converting part of the first light into second light, and the second light is combined with the remaining first light to form a combined spectrum" and "the combined spectrum has a first wavelength band of 380 nanometers to 620 nanometers, a second wavelength band of 660 nanometers to 780 nanometers and an intermediate wavelength band between the first wavelength band and the second wavelength band, the intensity value of the first wavelength band shows an upward trend, the intensity value of the second wavelength band shows a downward trend, and the downward trend of the intensity value of the second wavelength band is steeper than the upward trend of the intensity value of the first wavelength band."

[0025] Furthermore, when the light emitting device of the present invention is used in practice, it can prevent the human eye from perceiving the red light (the red light is weakened), thereby reducing the probability of accidents.

[0026] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of the structure of the light-emitting device of the present invention.

[0028] Figure 2 One of the light source configurations of the lighting device of the present invention is shown.

[0029] Figure 3 Another light source configuration of the lighting device of the present invention is shown.

[0030] Figure 4 Another light source configuration of the lighting device of the present invention is shown.

[0031] Figure 5Another light source configuration of the lighting device of the present invention is shown.

[0032] Figure 6 This is a combined spectrum diagram of Example 1 of the light-emitting device of the present invention.

[0033] Figure 7 This is a combined spectrum diagram of Example 2 of the light-emitting device of the present invention.

[0034] Figure 8 This is a combined spectrum diagram of Example 3 of the light-emitting device of the present invention.

[0035] Figure 9 This is a combined spectrum diagram of Example 4 of the light-emitting device of the present invention.

[0036] Figure 10 This is a combined spectrum diagram of Example 5 of the light-emitting device of the present invention.

[0037] Figure 11 This is a combined spectrum diagram of Example 6 of the light-emitting device of the present invention.

[0038] Figure 12 This is a combined spectrum diagram of Example 7 of the light-emitting device of the present invention.

[0039] Figure 13 This is a combined spectrum diagram of Example 8 of the light-emitting device of the present invention. DETAILED DESCRIPTION

[0040] The following is an explanation of the implementation of the "light-emitting device" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following embodiments will further explain the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0041] See also Figure 1 , showing the structure of the light emitting device Z of the present invention. Figure 1As shown, the light-emitting device Z of the present invention comprises a base structure 1, a light source unit 2, and a wavelength conversion structure 3. The light source unit 2 is mounted on the base structure 1, and the wavelength conversion structure 3 is disposed in the light output path of the light source unit 2. In use, an electrical signal is applied to the light source unit 2 through the base structure 1, causing the light source unit 2 to emit first light with a wavelength range of 350 nanometers to 700 nanometers. The wavelength conversion structure 3 receives the first light and converts a portion of the first light into a second light. The second light is combined with the remaining first light to form a combined spectrum S1-S8.

[0042] Please refer to Figures 6 to 13 The combined spectrum S1-S8 is designed in a special form, comprising a first wavelength range A1-A8, a second wavelength range C1-C8, and an intermediate wavelength range B1-B10 between the first and second wavelength ranges A1-A8 and C1-C8. The first wavelength range A1-A8 extends from 380 to 620 nanometers, and the intensity values ​​within the first wavelength range A1-A8 show an increasing trend. The second wavelength range C1-C8 extends from 660 to 780 nanometers, and the intensity values ​​within the first wavelength range A1-A8 show a decreasing trend. Notably, the decreasing trend of the intensity values ​​within the second wavelength range C1-C8 is steeper than the increasing trend of the intensity values ​​within the first wavelength range A1-A8. That is, the absolute value of the decreasing slope of the intensity values ​​within the second wavelength range C1-C8 is greater than the absolute value of the increasing slope of the intensity values ​​within the first wavelength range A1-A8. Therefore, the red light intensity required for practical applications can be maintained without causing red burst phenomenon. Therefore, when the light emitting device Z of the present invention is used in practical applications, it can prevent the human eye from perceiving the red light, thereby reducing the probability of accidents.

[0043] In the present invention, Figures 6 to 13 As shown, the middle wavelength band B1-B8 of the combined spectrum S1-S8 may have a peak P1-P8, and the peak intensity of peak P1-P8 is the highest. That is, the peak intensity of peak P1-P8 is greater than the maximum intensity of the first wavelength band A1-A8 and the maximum intensity of the second wavelength band C1-C8. In other words, the highest peak of the combined spectrum S1-S8 is located in the red wavelength band, making it suitable for supplementary lighting in low-light conditions. Furthermore, the intensity of the first wavelength band A1-A8 at a wavelength of 440 nanometers is less than 30% of the peak intensity of peak P1-P8, the intensity of the first wavelength band A1-A8 at a wavelength of 600 nanometers is less than 80% of the peak intensity of peak P1-P8, the intensity of the second wavelength band C1-C8 at a wavelength of 680 nanometers is less than 60% of the peak intensity of peak P1-P8, and the intensity of the second wavelength band C1-C8 at a wavelength of 740 nanometers is less than 20% of the peak intensity of peak P1-P8. Therefore, the infrared light band can be further reduced to weaken the red burst phenomenon and improve energy utilization.

[0044] Please refer to Figures 2 to 5 , showing the light source configuration within the light-emitting device Z of the present invention. To combine the wavelength-converted second light with the remaining unconverted first light to form a combined spectrum S1-S8, the light source unit 2 may include one or more light-emitting elements 21 with a wavelength of 350 to 420 nanometers, one or more light-emitting elements 22 with a wavelength of 420 to 480 nanometers, one or more light-emitting elements 23 with a wavelength of 600 to 700 nanometers, or any combination thereof. The light-emitting elements 21 with a wavelength of 350 to 420 nanometers may be violet LED chips, the light-emitting elements 22 with a wavelength of 420 to 480 nanometers may be blue LED chips, and the light-emitting elements 23 with a wavelength of 600 to 700 nanometers may be red LED chips. Furthermore, the wavelength conversion structure 3 may contain a wavelength conversion material, and the wavelength conversion material may include a blue phosphor, a green phosphor, a yellow phosphor, an orange phosphor, a red phosphor, or any combination thereof.

[0045] It should be noted that by using different phosphor mixing systems, such as changing the type and mixing ratio of phosphors in the system, the rising trend of the first wavelength range A1-A8 may have at least one turning point.

[0046] In this embodiment, the base structure 1 may include a carrier 11 and a reflective structure 12 disposed on the carrier 11. One or more independent cavities 100 may be defined between the carrier 11 and the reflective structure 12. Each cavity 100 may contain one or more 350-420 nm light-emitting elements 21, 420-480 nm light-emitting elements 22, or 600-700 nm light-emitting elements 23. The carrier 11 may be a lead frame or a substrate, and the 350-420 nm light-emitting elements 21, 420-480 nm light-emitting elements 22, or 600-700 nm light-emitting elements 23 may be secured to the carrier 11 via conductive bumps (not shown). Furthermore, a wavelength conversion structure 3 is disposed within the cavity 100 and covers the 350-420 nm light-emitting elements 21, 420-480 nm light-emitting elements 22, or 600-700 nm light-emitting elements 23. The main body of the wavelength conversion structure 3 may be a light-transmitting layer, and the wavelength conversion material is dispersed in the light-transmitting layer.

[0047] Specifically, each accommodating cavity 100 is enclosed by a reflective surface 120 (inner ring side surface) of the reflective structure 12 and has a first region 101 and a second region 102. The first region 101 may include a conductive interface 111, which may be in the form of one or more conductive pads. The second region 102 may include a 350-420 nm light-emitting element 21, a 420-480 nm light-emitting element 22, or a 600-700 nm light-emitting element 23 electrically connected to the conductive interface 111. Furthermore, an insulating layer 13 may be provided between the first region 101 and the second region 102 to separate the conductive interface 111 from the 350-420 nm light-emitting element 21, the 420-480 nm light-emitting element 22, or the 600-700 nm light-emitting element 23. In practical applications, the light-emitting element 21 with a wavelength of 350 to 420 nm, the light-emitting element 22 with a wavelength of 420 to 480 nm, or the light-emitting element 23 with a wavelength of 600 to 700 nm can be electrically connected to the conductive interface 111 via a wire W. The wire W extends from the first region 101 to the second region 102 and passes over the insulating layer 13. Preferably, the thickness of the insulating layer 13 is less than the height of the light-emitting element 21 with a wavelength of 350 to 420 nm, the light-emitting element 22 with a wavelength of 420 to 480 nm, or the light-emitting element 23 with a wavelength of 600 to 700 nm.

[0048] The present invention will be further described below with reference to the embodiments.

[0049] Example 1

[0050] The structure of the light emitting device of Example 1 is as follows Figure 1 The light source uses a 405 nm violet light emitting element, which is configured as follows: Figure 2 As shown, the wavelength conversion material used in the wavelength conversion structure is a combination of red phosphor, green phosphor and blue phosphor.

[0051] In Example 1, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 6 The combined spectrum S1 shown in the figure has a middle wavelength band B1 of the combined spectrum S1 having a peak P1, and the peak intensity of the peak P1 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength band A1 has an intensity of less than 30% of the peak intensity of the peak P1 at a wavelength of 440 nm, the first wavelength band A1 has an intensity of less than 80% of the peak intensity of the peak P1 at a wavelength of 600 nm, the second wavelength band C1 has an intensity of less than 60% of the peak intensity of the peak P1 at a wavelength of 680 nm, and the second wavelength band C1 has an intensity of less than 20% of the peak intensity of the peak P1 at a wavelength of 740 nm.

[0052] Example 2

[0053] The structure of the light emitting device of Example 2 is as follows Figure 1 The light source includes four 405 nm purple light emitting elements, configured as follows: Figure 3 As shown, the wavelength conversion material used in the wavelength conversion structure is a combination of red phosphor, green phosphor and blue phosphor.

[0054] In Example 2, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 7 The combined spectrum S2 shown in the figure has a middle wavelength segment B2 of the combined spectrum S2 having a peak P2, and the peak intensity of the peak P2 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength segment A2 has an intensity of less than 30% of the peak intensity of the peak P2 at a wavelength of 440 nm, the first wavelength segment A2 has an intensity of less than 80% of the peak intensity of the peak P2 at a wavelength of 600 nm, the second wavelength segment C2 has an intensity of less than 60% of the peak intensity of the peak P2 at a wavelength of 680 nm, and the second wavelength segment C2 has an intensity of less than 20% of the peak intensity of the peak P2 at a wavelength of 740 nm.

[0055] Example 3

[0056] The structure of the light emitting device of Example 3 is as follows Figure 1 The light source includes two 405 nm purple light emitting elements, configured as follows: Figure 4 As shown; the wavelength conversion structure contains a first wavelength conversion material for converting the wavelength of light emitted by one 405-nanometer violet light-emitting element and a second wavelength conversion material for converting the wavelength of light emitted by another 405-nanometer violet light-emitting element. The first wavelength conversion material is a combination of orange phosphor, green phosphor and blue phosphor, and the second wavelength conversion material is a combination of red phosphor, green phosphor and blue phosphor.

[0057] In Example 3, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 8The combined spectrum S3 shown in the figure has a middle wavelength segment B3 of the combined spectrum S3 having a peak P3, and the peak intensity of the peak P3 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength segment A3 has an intensity of less than 30% of the peak intensity of the peak P3 at a wavelength of 440 nm, the first wavelength segment A3 has an intensity of less than 80% of the peak intensity of the peak P3 at a wavelength of 600 nm, the second wavelength segment C3 has an intensity of less than 60% of the peak intensity of the peak P3 at a wavelength of 680 nm, and the second wavelength segment C3 has an intensity of less than 20% of the peak intensity of the peak P3 at a wavelength of 740 nm.

[0058] Example 4

[0059] The structure of the light emitting device of Example 4 is as follows Figure 1 The light source includes a 405 nm purple light emitting element and a 450 nm blue light emitting element, and the configuration is as follows: Figure 4 As shown; the wavelength conversion structure contains a first wavelength conversion material for converting the wavelength of light emitted by a 405-nanometer purple light-emitting element and a second wavelength conversion material for converting the wavelength of light emitted by a 450-nanometer blue light-emitting element. The first wavelength conversion material is a combination of orange phosphor, green phosphor and blue phosphor, and the second wavelength conversion material is a combination of red phosphor, green phosphor and blue phosphor.

[0060] In Example 4, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 9 The combined spectrum S4 shown in the figure has a middle wavelength segment B4 with a peak P4, and the peak intensity of the peak P4 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength segment A4 has an intensity of less than 30% of the peak intensity of the peak P4 at a wavelength of 440 nm, the first wavelength segment A4 has an intensity of less than 80% of the peak intensity of the peak P4 at a wavelength of 600 nm, the second wavelength segment C4 has an intensity of less than 60% of the peak intensity of the peak P4 at a wavelength of 680 nm, and the second wavelength segment C4 has an intensity of less than 20% of the peak intensity of the peak P4 at a wavelength of 740 nm.

[0061] Example 5

[0062] The structure of the light emitting device of Example 5 is as follows Figure 1 The light source includes a 405 nm purple light emitting element and a 650 nm red light emitting element, and the configuration is as follows. Figure 4As shown; the wavelength conversion structure contains only a wavelength conversion material for converting the wavelength of light emitted by the 405-nanometer violet light-emitting element, and the wavelength conversion material is a combination of orange phosphor, green phosphor and blue phosphor.

[0063] In Example 5, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 10 The combined spectrum S5 shown in the figure has a middle wavelength segment B5 with a peak P5, and the peak intensity of the peak P5 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength segment A5 has an intensity of less than 30% of the peak intensity of the peak P5 at a wavelength of 440 nm, the first wavelength segment A5 has an intensity of less than 80% of the peak intensity of the peak P5 at a wavelength of 600 nm, the second wavelength segment C5 has an intensity of less than 60% of the peak intensity of the peak P5 at a wavelength of 680 nm, and the second wavelength segment C5 has an intensity of less than 20% of the peak intensity of the peak P5 at a wavelength of 740 nm.

[0064] Example 6

[0065] The structure of the light emitting device of Example 6 is as follows Figure 1 The light source includes three 405 nm purple light emitting elements, configured as follows: Figure 5 As shown; the wavelength conversion structure contains a first wavelength conversion material for converting the wavelength of light emitted by a first 405-nanometer violet light-emitting element, a second wavelength conversion material for converting the wavelength of light emitted by a second 405-nanometer violet light-emitting element (the middle violet light-emitting element), and a third wavelength conversion material for converting the wavelength of light emitted by a third 405-nanometer violet light-emitting element. The first and third wavelength conversion materials are a combination of red phosphor, green phosphor, and blue phosphor, and the second wavelength conversion material is a combination of orange phosphor, green phosphor, and blue phosphor.

[0066] In Example 6, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 11 The combined spectrum S6 shown in the figure has a middle wavelength segment B8 with a peak P6, and the peak intensity of the peak P6 falls within the wavelength range of 620 nm to 660 nm, which is the maximum value of the light intensity; and the first wavelength segment A6 has an intensity of less than 30% of the peak intensity of the peak P6 at a wavelength of 440 nm, the first wavelength segment A6 has an intensity of less than 80% of the peak intensity of the peak P6 at a wavelength of 600 nm, the second wavelength segment C6 has an intensity of less than 60% of the peak intensity of the peak P6 at a wavelength of 680 nm, and the second wavelength segment C6 has an intensity of less than 20% of the peak intensity of the peak P6 at a wavelength of 740 nm.

[0067] Example 7

[0068] The structure of the light emitting device of Example 7 is as follows Figure 1 As shown. The light source includes a 650-nanometer red light emitting element and two 405-nanometer purple light emitting elements from the outside to the inside, and the configuration is as follows Figure 5 As shown; the wavelength conversion structure only contains a first wavelength conversion material for converting the wavelength of light emitted by one of the 405-nanometer violet light-emitting elements (the middle violet light-emitting element) and a second wavelength conversion material for converting the wavelength of light emitted by the other 405-nanometer violet light-emitting element. The first wavelength conversion material is a combination of green phosphor and blue phosphor, and the second wavelength conversion material is a combination of orange phosphor, green phosphor and blue phosphor.

[0069] In Example 7, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 12 The combined spectrum S7 shown in the figure, wherein the middle wavelength segment B7 of the combined spectrum S7 has a peak P7, and the peak intensity of the peak P7 falls within the wavelength range of 620 nanometers to 660 nanometers, which is the maximum value of the light intensity; and, the first wavelength segment A7 has an intensity of less than 30% of the peak intensity of the peak P7 at a wavelength of 440 nanometers, the first wavelength segment A7 has an intensity of less than 80% of the peak intensity of the peak P7 at a wavelength of 600 nanometers, the second wavelength segment C7 has an intensity of less than 60% of the peak intensity of the peak P7 at a wavelength of 680 nanometers, and the second wavelength segment C7 has an intensity of less than 20% of the peak intensity of the peak P7 at a wavelength of 740 nanometers.

[0070] Example 8

[0071] The structure of the light emitting device of Example 8 is as follows Figure 1 As shown. The light source portion includes a 650-nanometer red light emitting element, a 405-nanometer purple light emitting element and a 450-nanometer blue light emitting element from the outside to the inside, and the configuration is as follows Figure 5 As shown; the wavelength conversion structure only contains a first wavelength conversion material for converting the wavelength of light emitted by a 405-nanometer violet light-emitting element and a second wavelength conversion material for converting the wavelength of light emitted by a 405-nanometer violet light-emitting element. The first wavelength conversion material is a combination of green phosphor and blue phosphor, and the second wavelength conversion material is a combination of orange phosphor and green phosphor.

[0072] In Example 8, the wavelength-converted second light is combined with the remaining unconverted first light to form Figure 13The combined spectrum S8 shown in the figure has a middle wavelength segment B8 with a peak P8, and the peak intensity of the peak P8 falls within the wavelength range of 620 nanometers to 660 nanometers, which is the maximum value of the light intensity; and the first wavelength segment A8 has an intensity of less than 30% of the peak intensity of the peak P8 at a wavelength of 440 nanometers, the first wavelength segment A8 has an intensity of less than 80% of the peak intensity of the peak P8 at a wavelength of 600 nanometers, the second wavelength segment C8 has an intensity of less than 60% of the peak intensity of the peak P8 at a wavelength of 680 nanometers, and the second wavelength segment C8 has an intensity of less than 20% of the peak intensity of the peak P8 at a wavelength of 740 nanometers.

[0073] Please refer to Table 1 below and Figures 6 to 13 As shown, the present invention combines spectra S1-S8 to achieve a ratio of 2.304-5.248:1 between the integrated area from 385 nanometers to the peak and the integrated area from the peak to 780 nanometers. The peak intensity occurs in the red wavelength band. This allows for both fill light and a subtle red burst in night photography. If the ratio of these two integrated areas is too low, the red burst will not be attenuated to a subtle level. If the ratio is too high, most of the energy will be converted to components other than red light, failing to achieve the desired nighttime fill light effect.

[0074] Table 1

[0075]

[0076] One of the beneficial effects of the present invention is that the light-emitting device of the present invention can maintain the red light intensity required for practical applications without causing a red burst phenomenon through the technical features of "the wavelength conversion structure is arranged on the light path of the first light, the wavelength conversion structure is suitable for converting part of the first light into second light, and the second light is combined with the remaining first light to form a combined spectrum" and "the combined spectrum has a first wavelength band of 380 nanometers to 620 nanometers, a second wavelength band of 660 nanometers to 780 nanometers and an intermediate wavelength band between the first wavelength band and the second wavelength band, the intensity value of the first wavelength band shows an upward trend, the intensity value of the second wavelength band shows a downward trend, and the downward trend of the intensity value of the second wavelength band is steeper than the upward trend of the intensity value of the first wavelength band."

[0077] Furthermore, when the light emitting device of the present invention is used in practice, it can prevent the human eye from perceiving the red light (the red light is weakened), thereby reducing the probability of accidents.

[0078] The contents disclosed above are only preferred feasible embodiments of the present invention and do not limit the scope of protection of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the description and drawings of the present invention are included in the scope of protection of the claims of the present invention.

Claims

1. A light emitting device, characterized in that: The light emitting device comprises: - Infrastructure; a light source portion, disposed on the base structure, for emitting a first light with a wavelength in a range of 350 nanometers to 700 nanometers; and a wavelength conversion structure disposed on a light path of the first light, the wavelength conversion structure being adapted to convert a portion of the first light into a second light, and the second light being combined with the remaining first light to form a combined spectrum; The combined spectrum includes a first wavelength range of 380 to 620 nanometers, a second wavelength range of 660 to 780 nanometers, and an intermediate wavelength range between the first and second wavelength ranges; the intensity value of the first wavelength range shows an increasing trend; the intermediate wavelength range has a peak; the intensity value of the second wavelength range shows a decreasing trend; and the decreasing trend of the intensity value of the second wavelength range is steeper than the increasing trend of the intensity value of the first wavelength range. The ratio of the integrated area from 380 nm to the peak value to the integrated area from the peak value to 780 nm in the combined spectrum is 2.304-5.248:

1.

2. The light emitting device according to claim 1, wherein An absolute value of a decreasing slope of the intensity value of the second wavelength band is greater than an absolute value of an increasing slope of the intensity value of the first wavelength band.

3. The light emitting device according to claim 1, wherein The first wavelength band has an intensity less than 30% of a peak intensity of the peak at a wavelength of 440 nanometers.

4. The light emitting device according to claim 1, wherein The first wavelength band has an intensity less than 80% of a peak intensity of the peak at a wavelength of 600 nanometers.

5. The light emitting device according to claim 1, wherein The light source unit includes one or more light-emitting elements with a wavelength of 350 to 420 nanometers, one or more light-emitting elements with a wavelength of 420 to 480 nanometers, one or more light-emitting elements with a wavelength of 600 to 700 nanometers, or any combination thereof.

6. The light emitting device according to claim 5, characterized in that The wavelength conversion structure contains a wavelength conversion material, and the wavelength conversion material includes a blue phosphor, a yellow phosphor, a green phosphor, an orange phosphor, a red phosphor, or any combination thereof.

7. The light emitting device according to claim 5, characterized in that The light source unit includes one or more light-emitting elements with a wavelength of 350 nm to 420 nm.

8. The light emitting device according to claim 7, characterized in that The light source further includes a light emitting element with a wavelength of 600 to 700 nanometers.

9. The light emitting device according to claim 7, wherein: The wavelength conversion structure is only disposed on the one or more 350 nm to 420 nm light emitting elements.

10. The light emitting device according to claim 5, characterized in that The light source portion includes a light emitting element with a wavelength of 350 to 420 nanometers and a light emitting element with a wavelength of 420 to 480 nanometers.

11. The light emitting device according to claim 10, characterized in that The wavelength conversion structure includes a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer is disposed on the 350-nm to 420-nm light-emitting element and contains a first wavelength conversion material. The second wavelength conversion layer is disposed on the 420-nm to 480-nm light-emitting element and contains a second wavelength conversion material. The first wavelength conversion material is a combination of an orange phosphor, a green phosphor, and a blue phosphor, and the second wavelength conversion material is a combination of a red phosphor and a green phosphor.

12. The light emitting device according to claim 5, characterized in that The light source portion includes a light emitting element with a wavelength of 350 to 420 nm, a light emitting element with a wavelength of 420 to 480 nm, and a light emitting element with a wavelength of 600 to 700 nm.

13. The light emitting device according to claim 12, characterized in that: The wavelength conversion structure includes a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer is disposed on the 350-nanometer to 420-nanometer light-emitting element and contains a first wavelength conversion material. The second wavelength conversion layer is disposed on the 420-nanometer to 480-nanometer light-emitting element and contains a second wavelength conversion material. The first wavelength conversion material is a combination of a green phosphor and a blue phosphor, and the second wavelength conversion material is a combination of a red phosphor and a green phosphor.

14. The light emitting device according to claim 6, characterized in that The basic structure includes a carrier and a reflective structure arranged on the carrier, and the carrier and the reflective structure form a accommodating cavity for accommodating the 350 nm to 420 nm light-emitting element, the 420 nm to 480 nm light-emitting element or the 600 nm to 700 nm light-emitting element.

15. The light emitting device according to claim 14, characterized in that The carrier has a first region and a second region, a conductive interface is provided in the first region, the 350 nm to 420 nm light-emitting element, the 420 nm to 480 nm light-emitting element or the 600 nm to 700 nm light-emitting element is arranged in the second region and forms an electrical connection with the conductive interface.

16. The light emitting device according to claim 15, characterized in that The base structure further includes an insulating layer located between the first region and the second region, and the insulating layer separates the 350 nm to 420 nm light emitting element, the 420 nm to 480 nm light emitting element, or the 600 nm to 700 nm light emitting element from the conductive interface.

17. The light emitting device according to claim 16, wherein: The 350-420 nm light-emitting element, the 420-480 nm light-emitting element, or the 600-700 nm light-emitting element is electrically connected to the conductive interface via a wire extending from the first region to the second region and passing over the insulating layer.

18. The light emitting device according to claim 17, characterized in that The thickness of the insulating layer is smaller than the height of the 350-420 nm light-emitting element, the 420-480 nm light-emitting element, or the 600-700 nm light-emitting element.

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